TW201536903A - 研磨用組成物 - Google Patents
研磨用組成物 Download PDFInfo
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- TW201536903A TW201536903A TW104104252A TW104104252A TW201536903A TW 201536903 A TW201536903 A TW 201536903A TW 104104252 A TW104104252 A TW 104104252A TW 104104252 A TW104104252 A TW 104104252A TW 201536903 A TW201536903 A TW 201536903A
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- polishing
- polishing composition
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- polished
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- 238000005498 polishing Methods 0.000 title claims abstract description 217
- 239000000203 mixture Substances 0.000 title claims abstract description 156
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 42
- 239000006061 abrasive grain Substances 0.000 claims abstract description 35
- 239000000126 substance Substances 0.000 claims abstract description 12
- 125000004429 atom Chemical group 0.000 claims abstract description 9
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 9
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 9
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 9
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 8
- 125000001309 chloro group Chemical group Cl* 0.000 claims abstract description 7
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 16
- 230000002209 hydrophobic effect Effects 0.000 claims description 8
- 239000003002 pH adjusting agent Substances 0.000 claims description 7
- 125000003277 amino group Chemical group 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 239000012535 impurity Substances 0.000 abstract description 28
- 239000003795 chemical substances by application Substances 0.000 abstract description 12
- 238000010979 pH adjustment Methods 0.000 abstract description 2
- 238000000227 grinding Methods 0.000 description 86
- -1 polyoxyethylene ethyl glycerol Polymers 0.000 description 63
- 229910000420 cerium oxide Inorganic materials 0.000 description 24
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 24
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 239000002904 solvent Substances 0.000 description 19
- 238000005406 washing Methods 0.000 description 19
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 15
- 239000000463 material Substances 0.000 description 15
- 239000002253 acid Substances 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 239000004372 Polyvinyl alcohol Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 229920002451 polyvinyl alcohol Polymers 0.000 description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 229910052707 ruthenium Inorganic materials 0.000 description 8
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 7
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 7
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 7
- 235000011114 ammonium hydroxide Nutrition 0.000 description 7
- 150000002009 diols Chemical class 0.000 description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 7
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 7
- 150000007524 organic acids Chemical class 0.000 description 7
- 229920002635 polyurethane Polymers 0.000 description 7
- 239000004814 polyurethane Substances 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- 239000004094 surface-active agent Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- 239000002202 Polyethylene glycol Substances 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 150000002391 heterocyclic compounds Chemical group 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920001223 polyethylene glycol Polymers 0.000 description 6
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 6
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 6
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 6
- 239000011164 primary particle Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 5
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 5
- 235000015165 citric acid Nutrition 0.000 description 5
- 239000002612 dispersion medium Substances 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 4
- 229920000223 polyglycerol Polymers 0.000 description 4
- 125000003396 thiol group Chemical group [H]S* 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- LTSWUFKUZPPYEG-UHFFFAOYSA-N 1-decoxydecane Chemical compound CCCCCCCCCCOCCCCCCCCCC LTSWUFKUZPPYEG-UHFFFAOYSA-N 0.000 description 3
- PZOUSPYUWWUPPK-UHFFFAOYSA-N 4-methyl-1h-indole Chemical compound CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- REYJJPSVUYRZGE-UHFFFAOYSA-N Octadecylamine Chemical compound CCCCCCCCCCCCCCCCCCN REYJJPSVUYRZGE-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 150000005215 alkyl ethers Chemical class 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000011163 secondary particle Substances 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- DWANEFRJKWXRSG-UHFFFAOYSA-N 1,2-tetradecanediol Chemical compound CCCCCCCCCCCCC(O)CO DWANEFRJKWXRSG-UHFFFAOYSA-N 0.000 description 2
- UNVGBIALRHLALK-UHFFFAOYSA-N 1,5-Hexanediol Chemical compound CC(O)CCCCO UNVGBIALRHLALK-UHFFFAOYSA-N 0.000 description 2
- UUWJHAWPCRFDHZ-UHFFFAOYSA-N 1-dodecoxydodecane;phosphoric acid Chemical compound OP(O)(O)=O.CCCCCCCCCCCCOCCCCCCCCCCCC UUWJHAWPCRFDHZ-UHFFFAOYSA-N 0.000 description 2
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 description 2
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Chemical compound C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 2
- ZUHDIDYOAZNPBV-UHFFFAOYSA-N 2-[2-hydroxyethyl-[(4-methylbenzotriazol-1-yl)methyl]amino]ethanol Chemical compound CC1=CC=CC2=C1N=NN2CN(CCO)CCO ZUHDIDYOAZNPBV-UHFFFAOYSA-N 0.000 description 2
- HHYPDQBCLQZKLI-UHFFFAOYSA-N 2-[2-hydroxyethyl-[(5-methylbenzotriazol-1-yl)methyl]amino]ethanol Chemical compound CC1=CC=C2N(CN(CCO)CCO)N=NC2=C1 HHYPDQBCLQZKLI-UHFFFAOYSA-N 0.000 description 2
- ZCSHACFHMFHFKK-UHFFFAOYSA-N 2-methyl-1,3,5-trinitrobenzene;2,4,6-trinitro-1,3,5-triazinane Chemical compound [O-][N+](=O)C1NC([N+]([O-])=O)NC([N+]([O-])=O)N1.CC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O ZCSHACFHMFHFKK-UHFFFAOYSA-N 0.000 description 2
- BHNHHSOHWZKFOX-UHFFFAOYSA-N 2-methyl-1H-indole Chemical compound C1=CC=C2NC(C)=CC2=C1 BHNHHSOHWZKFOX-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N 4-methylimidazole Chemical compound CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 2
- MVPKIPGHRNIOPT-UHFFFAOYSA-N 5,6-dimethyl-2h-benzotriazole Chemical compound C1=C(C)C(C)=CC2=NNN=C21 MVPKIPGHRNIOPT-UHFFFAOYSA-N 0.000 description 2
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 description 2
- PWSZRRFDVPMZGM-UHFFFAOYSA-N 5-phenyl-1h-pyrazol-3-amine Chemical compound N1N=C(N)C=C1C1=CC=CC=C1 PWSZRRFDVPMZGM-UHFFFAOYSA-N 0.000 description 2
- ONYNOPPOVKYGRS-UHFFFAOYSA-N 6-methylindole Natural products CC1=CC=C2C=CNC2=C1 ONYNOPPOVKYGRS-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 2
- IVYPNXXAYMYVSP-UHFFFAOYSA-N Indole-3-carbinol Natural products C1=CC=C2C(CO)=CNC2=C1 IVYPNXXAYMYVSP-UHFFFAOYSA-N 0.000 description 2
- 239000005639 Lauric acid Substances 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 150000008051 alkyl sulfates Chemical class 0.000 description 2
- 239000002280 amphoteric surfactant Substances 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N anhydrous quinoline Natural products N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 239000003945 anionic surfactant Substances 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 239000003093 cationic surfactant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- PFURGBBHAOXLIO-UHFFFAOYSA-N cyclohexane-1,2-diol Chemical compound OC1CCCCC1O PFURGBBHAOXLIO-UHFFFAOYSA-N 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- GHLKSLMMWAKNBM-UHFFFAOYSA-N dodecane-1,12-diol Chemical compound OCCCCCCCCCCCCO GHLKSLMMWAKNBM-UHFFFAOYSA-N 0.000 description 2
- RBNPOMFGQQGHHO-UHFFFAOYSA-N glyceric acid Chemical compound OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 2
- GJBXIPOYHVMPQJ-UHFFFAOYSA-N hexadecane-1,16-diol Chemical compound OCCCCCCCCCCCCCCCCO GJBXIPOYHVMPQJ-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- FGKJLKRYENPLQH-UHFFFAOYSA-N isocaproic acid Chemical compound CC(C)CCC(O)=O FGKJLKRYENPLQH-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- QMPFMODFBNEYJH-UHFFFAOYSA-N methyl 1h-1,2,4-triazole-5-carboxylate Chemical compound COC(=O)C1=NC=NN1 QMPFMODFBNEYJH-UHFFFAOYSA-N 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 239000011146 organic particle Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920001515 polyalkylene glycol Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 235000013772 propylene glycol Nutrition 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- ZFRKQXVRDFCRJG-UHFFFAOYSA-N skatole Chemical compound C1=CC=C2C(C)=CNC2=C1 ZFRKQXVRDFCRJG-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 1
- OBENDWOJIFFDLZ-UHFFFAOYSA-N (3,5-dimethylpyrazol-1-yl)methanol Chemical compound CC=1C=C(C)N(CO)N=1 OBENDWOJIFFDLZ-UHFFFAOYSA-N 0.000 description 1
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical compound NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 description 1
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- 150000005206 1,2-dihydroxybenzenes Chemical class 0.000 description 1
- JUDMNPJWHXETRI-UHFFFAOYSA-N 1,2-dimethylpyrazole Chemical compound CN1[CH][CH][CH]N1C JUDMNPJWHXETRI-UHFFFAOYSA-N 0.000 description 1
- BTOOAFQCTJZDRC-UHFFFAOYSA-N 1,2-hexadecanediol Chemical compound CCCCCCCCCCCCCCC(O)CO BTOOAFQCTJZDRC-UHFFFAOYSA-N 0.000 description 1
- 229940015975 1,2-hexanediol Drugs 0.000 description 1
- 229940031723 1,2-octanediol Drugs 0.000 description 1
- SILNNFMWIMZVEQ-UHFFFAOYSA-N 1,3-dihydrobenzimidazol-2-one Chemical compound C1=CC=C2NC(O)=NC2=C1 SILNNFMWIMZVEQ-UHFFFAOYSA-N 0.000 description 1
- 150000005207 1,3-dihydroxybenzenes Chemical class 0.000 description 1
- NAPPMSNSLWACIV-UHFFFAOYSA-N 1,3-dimethylindole Chemical compound C1=CC=C2C(C)=CN(C)C2=C1 NAPPMSNSLWACIV-UHFFFAOYSA-N 0.000 description 1
- ALVZNPYWJMLXKV-UHFFFAOYSA-N 1,9-Nonanediol Chemical compound OCCCCCCCCCO ALVZNPYWJMLXKV-UHFFFAOYSA-N 0.000 description 1
- XZHWEHOSQYNGOL-UHFFFAOYSA-N 1-(1h-benzimidazol-2-yl)ethanol Chemical compound C1=CC=C2NC(C(O)C)=NC2=C1 XZHWEHOSQYNGOL-UHFFFAOYSA-N 0.000 description 1
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 description 1
- MWZDIEIXRBWPLG-UHFFFAOYSA-N 1-methyl-1,2,4-triazole Chemical compound CN1C=NC=N1 MWZDIEIXRBWPLG-UHFFFAOYSA-N 0.000 description 1
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 description 1
- BLRHMMGNCXNXJL-UHFFFAOYSA-N 1-methylindole Chemical compound C1=CC=C2N(C)C=CC2=C1 BLRHMMGNCXNXJL-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- UFLWECJWSGWVHB-UHFFFAOYSA-N 1H-carbazole Chemical compound C1=CC=C2C3=CC=CCC3=NC2=C1 UFLWECJWSGWVHB-UHFFFAOYSA-N 0.000 description 1
- ZCBIFHNDZBSCEP-UHFFFAOYSA-N 1H-indol-5-amine Chemical compound NC1=CC=C2NC=CC2=C1 ZCBIFHNDZBSCEP-UHFFFAOYSA-N 0.000 description 1
- WTFWZOSMUGZKNZ-UHFFFAOYSA-N 1H-indol-7-amine Chemical compound NC1=CC=CC2=C1NC=C2 WTFWZOSMUGZKNZ-UHFFFAOYSA-N 0.000 description 1
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 1
- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 description 1
- LJVQHXICFCZRJN-UHFFFAOYSA-N 1h-1,2,4-triazole-5-carboxylic acid Chemical compound OC(=O)C1=NC=NN1 LJVQHXICFCZRJN-UHFFFAOYSA-N 0.000 description 1
- MIMYTSWNVBMNRH-UHFFFAOYSA-N 1h-indol-6-amine Chemical compound NC1=CC=C2C=CNC2=C1 MIMYTSWNVBMNRH-UHFFFAOYSA-N 0.000 description 1
- XAWPKHNOFIWWNZ-UHFFFAOYSA-N 1h-indol-6-ol Chemical compound OC1=CC=C2C=CNC2=C1 XAWPKHNOFIWWNZ-UHFFFAOYSA-N 0.000 description 1
- ORVPXPKEZLTMNW-UHFFFAOYSA-N 1h-indol-7-ol Chemical compound OC1=CC=CC2=C1NC=C2 ORVPXPKEZLTMNW-UHFFFAOYSA-N 0.000 description 1
- ROGHUJUFCRFUSO-UHFFFAOYSA-N 1h-indole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=C1C=CN2 ROGHUJUFCRFUSO-UHFFFAOYSA-N 0.000 description 1
- GHTDODSYDCPOCW-UHFFFAOYSA-N 1h-indole-6-carboxylic acid Chemical compound OC(=O)C1=CC=C2C=CNC2=C1 GHTDODSYDCPOCW-UHFFFAOYSA-N 0.000 description 1
- JVVRJMXHNUAPHW-UHFFFAOYSA-N 1h-pyrazol-5-amine Chemical compound NC=1C=CNN=1 JVVRJMXHNUAPHW-UHFFFAOYSA-N 0.000 description 1
- KOPFEFZSAMLEHK-UHFFFAOYSA-N 1h-pyrazole-5-carboxylic acid Chemical compound OC(=O)C=1C=CNN=1 KOPFEFZSAMLEHK-UHFFFAOYSA-N 0.000 description 1
- HBFHSDDGEBQGKK-UHFFFAOYSA-N 2,2,4,4-tetramethylpentane-1,1-diol Chemical compound CC(C)(C)CC(C)(C)C(O)O HBFHSDDGEBQGKK-UHFFFAOYSA-N 0.000 description 1
- NEFAZJJIHDDXKM-UHFFFAOYSA-N 2,3-dimethyl-1h-indol-5-amine Chemical compound C1=C(N)C=C2C(C)=C(C)NC2=C1 NEFAZJJIHDDXKM-UHFFFAOYSA-N 0.000 description 1
- PYFVEIDRTLBMHG-UHFFFAOYSA-N 2,3-dimethyl-1h-indole Chemical compound C1=CC=C2C(C)=C(C)NC2=C1 PYFVEIDRTLBMHG-UHFFFAOYSA-N 0.000 description 1
- OJRJDENLRJHEJO-UHFFFAOYSA-N 2,4-diethylpentane-1,5-diol Chemical compound CCC(CO)CC(CC)CO OJRJDENLRJHEJO-UHFFFAOYSA-N 0.000 description 1
- ZFLFWZRPMDXJCW-UHFFFAOYSA-N 2,5-dimethyl-1h-indole Chemical compound CC1=CC=C2NC(C)=CC2=C1 ZFLFWZRPMDXJCW-UHFFFAOYSA-N 0.000 description 1
- ZWNMRZQYWRLGMM-UHFFFAOYSA-N 2,5-dimethylhexane-2,5-diol Chemical compound CC(C)(O)CCC(C)(C)O ZWNMRZQYWRLGMM-UHFFFAOYSA-N 0.000 description 1
- MVHOAOSHABGEFL-UHFFFAOYSA-N 2,6-dimethyl-1h-benzimidazole Chemical compound C1=C(C)C=C2NC(C)=NC2=C1 MVHOAOSHABGEFL-UHFFFAOYSA-N 0.000 description 1
- JNXJYDMXAJDPRV-UHFFFAOYSA-N 2-(benzotriazol-1-yl)butanedioic acid Chemical compound C1=CC=C2N(C(C(O)=O)CC(=O)O)N=NC2=C1 JNXJYDMXAJDPRV-UHFFFAOYSA-N 0.000 description 1
- RWLALWYNXFYRGW-UHFFFAOYSA-N 2-Ethyl-1,3-hexanediol Chemical compound CCCC(O)C(CC)CO RWLALWYNXFYRGW-UHFFFAOYSA-N 0.000 description 1
- OXQGTIUCKGYOAA-UHFFFAOYSA-N 2-Ethylbutanoic acid Chemical compound CCC(CC)C(O)=O OXQGTIUCKGYOAA-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- WKZLYSXRFUGBPI-UHFFFAOYSA-N 2-[benzotriazol-1-ylmethyl(2-hydroxyethyl)amino]ethanol Chemical compound C1=CC=C2N(CN(CCO)CCO)N=NC2=C1 WKZLYSXRFUGBPI-UHFFFAOYSA-N 0.000 description 1
- JWYUFVNJZUSCSM-UHFFFAOYSA-N 2-aminobenzimidazole Chemical compound C1=CC=C2NC(N)=NC2=C1 JWYUFVNJZUSCSM-UHFFFAOYSA-N 0.000 description 1
- DSKYSDCYIODJPC-UHFFFAOYSA-N 2-butyl-2-ethylpropane-1,3-diol Chemical compound CCCCC(CC)(CO)CO DSKYSDCYIODJPC-UHFFFAOYSA-N 0.000 description 1
- AYPSHJCKSDNETA-UHFFFAOYSA-N 2-chloro-1h-benzimidazole Chemical compound C1=CC=C2NC(Cl)=NC2=C1 AYPSHJCKSDNETA-UHFFFAOYSA-N 0.000 description 1
- AKRNPYKLZFDTPP-UHFFFAOYSA-N 2-heptylpropane-1,3-diol Chemical compound CCCCCCCC(CO)CO AKRNPYKLZFDTPP-UHFFFAOYSA-N 0.000 description 1
- LDZYRENCLPUXAX-UHFFFAOYSA-N 2-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(C)=NC2=C1 LDZYRENCLPUXAX-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- JQULCCZIXYRBSE-UHFFFAOYSA-N 2-methyl-1h-indol-5-amine Chemical compound NC1=CC=C2NC(C)=CC2=C1 JQULCCZIXYRBSE-UHFFFAOYSA-N 0.000 description 1
- JVZZUPJFERSVRN-UHFFFAOYSA-N 2-methyl-2-propylpropane-1,3-diol Chemical compound CCCC(C)(CO)CO JVZZUPJFERSVRN-UHFFFAOYSA-N 0.000 description 1
- WLAMNBDJUVNPJU-UHFFFAOYSA-N 2-methylbutyric acid Chemical compound CCC(C)C(O)=O WLAMNBDJUVNPJU-UHFFFAOYSA-N 0.000 description 1
- CVKMFSAVYPAZTQ-UHFFFAOYSA-N 2-methylhexanoic acid Chemical compound CCCCC(C)C(O)=O CVKMFSAVYPAZTQ-UHFFFAOYSA-N 0.000 description 1
- SDQROPCSKIYYAV-UHFFFAOYSA-N 2-methyloctane-1,8-diol Chemical compound OCC(C)CCCCCCO SDQROPCSKIYYAV-UHFFFAOYSA-N 0.000 description 1
- DWYHDSLIWMUSOO-UHFFFAOYSA-N 2-phenyl-1h-benzimidazole Chemical compound C1=CC=CC=C1C1=NC2=CC=CC=C2N1 DWYHDSLIWMUSOO-UHFFFAOYSA-N 0.000 description 1
- FUOZJYASZOSONT-UHFFFAOYSA-N 2-propan-2-yl-1h-imidazole Chemical compound CC(C)C1=NC=CN1 FUOZJYASZOSONT-UHFFFAOYSA-N 0.000 description 1
- GUOVBFFLXKJFEE-UHFFFAOYSA-N 2h-benzotriazole-5-carboxylic acid Chemical compound C1=C(C(=O)O)C=CC2=NNN=C21 GUOVBFFLXKJFEE-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- MLMQPDHYNJCQAO-UHFFFAOYSA-N 3,3-dimethylbutyric acid Chemical compound CC(C)(C)CC(O)=O MLMQPDHYNJCQAO-UHFFFAOYSA-N 0.000 description 1
- TXQKCKQJBGFUBF-UHFFFAOYSA-N 3,4,5-tribromo-1h-pyrazole Chemical compound BrC1=NNC(Br)=C1Br TXQKCKQJBGFUBF-UHFFFAOYSA-N 0.000 description 1
- MIIKMZAVLKMOFM-UHFFFAOYSA-N 3,5-dimethyl-1,2,4-triazol-4-amine Chemical compound CC1=NN=C(C)N1N MIIKMZAVLKMOFM-UHFFFAOYSA-N 0.000 description 1
- SDXAWLJRERMRKF-UHFFFAOYSA-N 3,5-dimethyl-1h-pyrazole Chemical compound CC=1C=C(C)NN=1 SDXAWLJRERMRKF-UHFFFAOYSA-N 0.000 description 1
- QQHNFZBYCQMAOD-UHFFFAOYSA-N 3,5-dipropyl-1,2,4-triazol-4-amine Chemical compound CCCC1=NN=C(CCC)N1N QQHNFZBYCQMAOD-UHFFFAOYSA-N 0.000 description 1
- CUYKNJBYIJFRCU-UHFFFAOYSA-N 3-aminopyridine Chemical compound NC1=CC=CN=C1 CUYKNJBYIJFRCU-UHFFFAOYSA-N 0.000 description 1
- SXFJDZNJHVPHPH-UHFFFAOYSA-N 3-methylpentane-1,5-diol Chemical compound OCCC(C)CCO SXFJDZNJHVPHPH-UHFFFAOYSA-N 0.000 description 1
- ZOPIBCDDKMAEII-UHFFFAOYSA-N 4-(1,2,4-triazol-1-yl)phenol Chemical compound C1=CC(O)=CC=C1N1N=CN=C1 ZOPIBCDDKMAEII-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- DFYGYTNMHPUJBY-UHFFFAOYSA-N 4-(trimethoxymethyl)dodecane-1-thiol Chemical compound SCCCC(C(OC)(OC)OC)CCCCCCCC DFYGYTNMHPUJBY-UHFFFAOYSA-N 0.000 description 1
- LUNUNJFSHKSXGQ-UHFFFAOYSA-N 4-Aminoindole Chemical compound NC1=CC=CC2=C1C=CN2 LUNUNJFSHKSXGQ-UHFFFAOYSA-N 0.000 description 1
- SVLZRCRXNHITBY-UHFFFAOYSA-N 4-chloro-1h-indole Chemical compound ClC1=CC=CC2=C1C=CN2 SVLZRCRXNHITBY-UHFFFAOYSA-N 0.000 description 1
- YMXQUFUYCADCFL-UHFFFAOYSA-N 4-chloro-1h-pyrazolo[3,4-d]pyrimidine Chemical compound ClC1=NC=NC2=C1C=NN2 YMXQUFUYCADCFL-UHFFFAOYSA-N 0.000 description 1
- NLMQHXUGJIAKTH-UHFFFAOYSA-N 4-hydroxyindole Chemical compound OC1=CC=CC2=C1C=CN2 NLMQHXUGJIAKTH-UHFFFAOYSA-N 0.000 description 1
- LUNOXNMCFPFPMO-UHFFFAOYSA-N 4-methoxy-1h-indole Chemical compound COC1=CC=CC2=C1C=CN2 LUNOXNMCFPFPMO-UHFFFAOYSA-N 0.000 description 1
- LAVZKLJDKGRZJG-UHFFFAOYSA-N 4-nitro-1h-indole Chemical compound [O-][N+](=O)C1=CC=CC2=C1C=CN2 LAVZKLJDKGRZJG-UHFFFAOYSA-N 0.000 description 1
- LJUQGASMPRMWIW-UHFFFAOYSA-N 5,6-dimethylbenzimidazole Chemical compound C1=C(C)C(C)=CC2=C1NC=N2 LJUQGASMPRMWIW-UHFFFAOYSA-N 0.000 description 1
- FYTLHYRDGXRYEY-UHFFFAOYSA-N 5-Methyl-3-pyrazolamine Chemical compound CC=1C=C(N)NN=1 FYTLHYRDGXRYEY-UHFFFAOYSA-N 0.000 description 1
- WZUUZPAYWFIBDF-UHFFFAOYSA-N 5-amino-1,2-dihydro-1,2,4-triazole-3-thione Chemical compound NC1=NNC(S)=N1 WZUUZPAYWFIBDF-UHFFFAOYSA-N 0.000 description 1
- QGLMSZQOJZAPSZ-UHFFFAOYSA-N 5-benzyl-1h-1,2,4-triazol-3-amine Chemical compound NC1=NNC(CC=2C=CC=CC=2)=N1 QGLMSZQOJZAPSZ-UHFFFAOYSA-N 0.000 description 1
- XXAMCWVPBITOGA-UHFFFAOYSA-N 5-bromo-3-nitro-1h-1,2,4-triazole Chemical compound [O-][N+](=O)C1=NNC(Br)=N1 XXAMCWVPBITOGA-UHFFFAOYSA-N 0.000 description 1
- MYTGFBZJLDLWQG-UHFFFAOYSA-N 5-chloro-1h-indole Chemical compound ClC1=CC=C2NC=CC2=C1 MYTGFBZJLDLWQG-UHFFFAOYSA-N 0.000 description 1
- WUVWAXJXPRYUME-UHFFFAOYSA-N 5-chloro-2-methyl-1h-indole Chemical compound ClC1=CC=C2NC(C)=CC2=C1 WUVWAXJXPRYUME-UHFFFAOYSA-N 0.000 description 1
- PZBQVZFITSVHAW-UHFFFAOYSA-N 5-chloro-2h-benzotriazole Chemical compound C1=C(Cl)C=CC2=NNN=C21 PZBQVZFITSVHAW-UHFFFAOYSA-N 0.000 description 1
- LMIQERWZRIFWNZ-UHFFFAOYSA-N 5-hydroxyindole Chemical compound OC1=CC=C2NC=CC2=C1 LMIQERWZRIFWNZ-UHFFFAOYSA-N 0.000 description 1
- DWAQDRSOVMLGRQ-UHFFFAOYSA-N 5-methoxyindole Chemical compound COC1=CC=C2NC=CC2=C1 DWAQDRSOVMLGRQ-UHFFFAOYSA-N 0.000 description 1
- UHOFPBXQUTZOKZ-UHFFFAOYSA-N 5-methyl-1,2,4-triazole-3,4-diamine Chemical compound CC1=NN=C(N)N1N UHOFPBXQUTZOKZ-UHFFFAOYSA-N 0.000 description 1
- RWXZXCZBMQPOBF-UHFFFAOYSA-N 5-methyl-1H-benzimidazole Chemical compound CC1=CC=C2N=CNC2=C1 RWXZXCZBMQPOBF-UHFFFAOYSA-N 0.000 description 1
- PMBIVOOUQJQBDC-UHFFFAOYSA-N 5-methyl-1H-carbazole-3-carboxylic acid Chemical compound C(=O)(O)C1=CCC2=NC3=CC=CC(=C3C2=C1)C PMBIVOOUQJQBDC-UHFFFAOYSA-N 0.000 description 1
- FJRZOOICEHBAED-UHFFFAOYSA-N 5-methyl-1h-1,2,4-triazol-3-amine Chemical compound CC1=NNC(N)=N1 FJRZOOICEHBAED-UHFFFAOYSA-N 0.000 description 1
- XKVUYEYANWFIJX-UHFFFAOYSA-N 5-methyl-1h-pyrazole Chemical compound CC1=CC=NN1 XKVUYEYANWFIJX-UHFFFAOYSA-N 0.000 description 1
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 1
- YPKBCLZFIYBSHK-UHFFFAOYSA-N 5-methylindole Chemical compound CC1=CC=C2NC=CC2=C1 YPKBCLZFIYBSHK-UHFFFAOYSA-N 0.000 description 1
- IVAFNTSFQLRDQV-UHFFFAOYSA-N 5-nitro-1H-carbazole Chemical compound [N+](=O)([O-])C1=C2C3=CC=CCC3=NC2=CC=C1 IVAFNTSFQLRDQV-UHFFFAOYSA-N 0.000 description 1
- KUEFXPHXHHANKS-UHFFFAOYSA-N 5-nitro-1h-1,2,4-triazole Chemical compound [O-][N+](=O)C1=NC=NN1 KUEFXPHXHHANKS-UHFFFAOYSA-N 0.000 description 1
- OZFPSOBLQZPIAV-UHFFFAOYSA-N 5-nitro-1h-indole Chemical compound [O-][N+](=O)C1=CC=C2NC=CC2=C1 OZFPSOBLQZPIAV-UHFFFAOYSA-N 0.000 description 1
- AOCDQWRMYHJTMY-UHFFFAOYSA-N 5-nitro-2h-benzotriazole Chemical compound C1=C([N+](=O)[O-])C=CC2=NNN=C21 AOCDQWRMYHJTMY-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- ZMAXXOYJWZZQBK-UHFFFAOYSA-N 5334-40-7 Chemical compound OC(=O)C1=NNC=C1[N+]([O-])=O ZMAXXOYJWZZQBK-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- YTYIMDRWPTUAHP-UHFFFAOYSA-N 6-Chloroindole Chemical compound ClC1=CC=C2C=CNC2=C1 YTYIMDRWPTUAHP-UHFFFAOYSA-N 0.000 description 1
- QJRWYBIKLXNYLF-UHFFFAOYSA-N 6-methoxy-1h-indole Chemical compound COC1=CC=C2C=CNC2=C1 QJRWYBIKLXNYLF-UHFFFAOYSA-N 0.000 description 1
- KVVBXGWVNVZOTF-UHFFFAOYSA-N 6-methyl-2,7-dihydro-1h-pyrazolo[3,4-b]pyridine-3,4-dione Chemical compound N1C(C)=CC(=O)C2=C1NNC2=O KVVBXGWVNVZOTF-UHFFFAOYSA-N 0.000 description 1
- KPEFTFPJMNPDNU-UHFFFAOYSA-N 6-nitro-1H-carbazole Chemical compound [N+](=O)([O-])C=1C=C2C3=CC=CCC3=NC2=CC=1 KPEFTFPJMNPDNU-UHFFFAOYSA-N 0.000 description 1
- XPAZGLFMMUODDK-UHFFFAOYSA-N 6-nitro-1h-benzimidazole Chemical compound [O-][N+](=O)C1=CC=C2N=CNC2=C1 XPAZGLFMMUODDK-UHFFFAOYSA-N 0.000 description 1
- PSWCIARYGITEOY-UHFFFAOYSA-N 6-nitro-1h-indole Chemical compound [O-][N+](=O)C1=CC=C2C=CNC2=C1 PSWCIARYGITEOY-UHFFFAOYSA-N 0.000 description 1
- UUNKRAWCQSWCJE-UHFFFAOYSA-N 6-propan-2-yl-1h-indole Chemical compound CC(C)C1=CC=C2C=CNC2=C1 UUNKRAWCQSWCJE-UHFFFAOYSA-N 0.000 description 1
- WMYQAKANKREQLM-UHFFFAOYSA-N 7-chloro-1h-indole Chemical compound ClC1=CC=CC2=C1NC=C2 WMYQAKANKREQLM-UHFFFAOYSA-N 0.000 description 1
- LHCPRYRLDOSKHK-UHFFFAOYSA-N 7-deaza-8-aza-adenine Chemical compound NC1=NC=NC2=C1C=NN2 LHCPRYRLDOSKHK-UHFFFAOYSA-N 0.000 description 1
- PIIZLMYXLGYWTN-UHFFFAOYSA-N 7-ethyl-1h-indole Chemical compound CCC1=CC=CC2=C1NC=C2 PIIZLMYXLGYWTN-UHFFFAOYSA-N 0.000 description 1
- FSOPPXYMWZOKRM-UHFFFAOYSA-N 7-methoxy-1h-indole Chemical compound COC1=CC=CC2=C1NC=C2 FSOPPXYMWZOKRM-UHFFFAOYSA-N 0.000 description 1
- KGWPHCDTOLQQEP-UHFFFAOYSA-N 7-methylindole Chemical compound CC1=CC=CC2=C1NC=C2 KGWPHCDTOLQQEP-UHFFFAOYSA-N 0.000 description 1
- LZJGQIVWUKFTRD-UHFFFAOYSA-N 7-nitro-1h-indole Chemical compound [O-][N+](=O)C1=CC=CC2=C1NC=C2 LZJGQIVWUKFTRD-UHFFFAOYSA-N 0.000 description 1
- PWAXBMFLOOZFBG-UHFFFAOYSA-N 8H-carbazol-3-amine Chemical compound C1C=CC=C2C3=CC(=CC=C3N=C12)N PWAXBMFLOOZFBG-UHFFFAOYSA-N 0.000 description 1
- MYQNVJJMVXTDMM-UHFFFAOYSA-N 8H-carbazol-3-ol Chemical compound OC=1C=C2C3=CC=CCC3=NC2=CC=1 MYQNVJJMVXTDMM-UHFFFAOYSA-N 0.000 description 1
- NWXBAYMTKHBJRG-UHFFFAOYSA-N 8H-carbazol-4-amine Chemical compound C1C=CC=C2C=3C(=CC=CC=3N=C12)N NWXBAYMTKHBJRG-UHFFFAOYSA-N 0.000 description 1
- LJFSKZRSKXNHCF-UHFFFAOYSA-N 8H-carbazol-4-ol Chemical compound OC1=C2C3=CC=CCC3=NC2=CC=C1 LJFSKZRSKXNHCF-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- NHDKZXXFWQCSFY-UHFFFAOYSA-N CCCCCC1=NN=C(CCCCC)N1N Chemical compound CCCCCC1=NN=C(CCCCC)N1N NHDKZXXFWQCSFY-UHFFFAOYSA-N 0.000 description 1
- 208000034628 Celiac artery compression syndrome Diseases 0.000 description 1
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BAVYZALUXZFZLV-UHFFFAOYSA-O Methylammonium ion Chemical compound [NH3+]C BAVYZALUXZFZLV-UHFFFAOYSA-O 0.000 description 1
- UQFQONCQIQEYPJ-UHFFFAOYSA-N N-methylpyrazole Chemical compound CN1C=CC=N1 UQFQONCQIQEYPJ-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Natural products C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical compound OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- YIMQCDZDWXUDCA-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCC(CO)CC1 YIMQCDZDWXUDCA-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000005211 alkyl trimethyl ammonium group Chemical group 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- XJORSXWICIGQLB-UHFFFAOYSA-N anthracen-1-ylmethanamine Chemical compound C1=CC=C2C=C3C(CN)=CC=CC3=CC2=C1 XJORSXWICIGQLB-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- XSCHRSMBECNVNS-UHFFFAOYSA-N benzopyrazine Natural products N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 1
- DZBUGLKDJFMEHC-UHFFFAOYSA-N benzoquinolinylidene Natural products C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 1
- JCXKHYLLVKZPKE-UHFFFAOYSA-N benzotriazol-1-amine Chemical compound C1=CC=C2N(N)N=NC2=C1 JCXKHYLLVKZPKE-UHFFFAOYSA-N 0.000 description 1
- KYPIPCWVZKRJDD-UHFFFAOYSA-N benzotriazole-1-carboxylic acid Chemical compound C1=CC=C2N(C(=O)O)N=NC2=C1 KYPIPCWVZKRJDD-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- PMMYEEVYMWASQN-IMJSIDKUSA-N cis-4-Hydroxy-L-proline Chemical compound O[C@@H]1CN[C@H](C(O)=O)C1 PMMYEEVYMWASQN-IMJSIDKUSA-N 0.000 description 1
- 239000011246 composite particle Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- DCYPPXGEIQTVPI-UHFFFAOYSA-N cycloheptane-1,2-diol Chemical compound OC1CCCCCC1O DCYPPXGEIQTVPI-UHFFFAOYSA-N 0.000 description 1
- FOTKYAAJKYLFFN-UHFFFAOYSA-N decane-1,10-diol Chemical compound OCCCCCCCCCCO FOTKYAAJKYLFFN-UHFFFAOYSA-N 0.000 description 1
- YSRSBDQINUMTIF-UHFFFAOYSA-N decane-1,2-diol Chemical compound CCCCCCCCC(O)CO YSRSBDQINUMTIF-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Natural products C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- ZITKDVFRMRXIJQ-UHFFFAOYSA-N dodecane-1,2-diol Chemical compound CCCCCCCCCCC(O)CO ZITKDVFRMRXIJQ-UHFFFAOYSA-N 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- CAPAZTWTGPAFQE-UHFFFAOYSA-N ethane-1,2-diol Chemical compound OCCO.OCCO CAPAZTWTGPAFQE-UHFFFAOYSA-N 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- PKWIYNIDEDLDCJ-UHFFFAOYSA-N guanazole Chemical compound NC1=NNC(N)=N1 PKWIYNIDEDLDCJ-UHFFFAOYSA-N 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- FHKSXSQHXQEMOK-UHFFFAOYSA-N hexane-1,2-diol Chemical compound CCCCC(O)CO FHKSXSQHXQEMOK-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000003100 immobilizing effect Effects 0.000 description 1
- IENZCGNHSIMFJE-UHFFFAOYSA-N indole-5-carboxylic acid Chemical compound OC(=O)C1=CC=C2NC=CC2=C1 IENZCGNHSIMFJE-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- SUMDYPCJJOFFON-UHFFFAOYSA-N isethionic acid Chemical compound OCCS(O)(=O)=O SUMDYPCJJOFFON-UHFFFAOYSA-N 0.000 description 1
- AWJUIBRHMBBTKR-UHFFFAOYSA-N iso-quinoline Natural products C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000000569 multi-angle light scattering Methods 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- OTLDLKLSNZMTTA-UHFFFAOYSA-N octahydro-1h-4,7-methanoindene-1,5-diyldimethanol Chemical compound C1C2C3C(CO)CCC3C1C(CO)C2 OTLDLKLSNZMTTA-UHFFFAOYSA-N 0.000 description 1
- AEIJTFQOBWATKX-UHFFFAOYSA-N octane-1,2-diol Chemical compound CCCCCCC(O)CO AEIJTFQOBWATKX-UHFFFAOYSA-N 0.000 description 1
- OEIJHBUUFURJLI-UHFFFAOYSA-N octane-1,8-diol Chemical compound OCCCCCCCCO OEIJHBUUFURJLI-UHFFFAOYSA-N 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- WCVRQHFDJLLWFE-UHFFFAOYSA-N pentane-1,2-diol Chemical compound CCCC(O)CO WCVRQHFDJLLWFE-UHFFFAOYSA-N 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920005906 polyester polyol Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- XRVCFZPJAHWYTB-UHFFFAOYSA-N prenderol Chemical compound CCC(CC)(CO)CO XRVCFZPJAHWYTB-UHFFFAOYSA-N 0.000 description 1
- 229950006800 prenderol Drugs 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- NPANDVNCRMZSFT-UHFFFAOYSA-N propane-1,2-diol;propane-1,3-diol Chemical compound CC(O)CO.OCCCO NPANDVNCRMZSFT-UHFFFAOYSA-N 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003304 ruthenium compounds Chemical class 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- XLKZJJVNBQCVIX-UHFFFAOYSA-N tetradecane-1,14-diol Chemical compound OCCCCCCCCCCCCCCO XLKZJJVNBQCVIX-UHFFFAOYSA-N 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- NQRYJNQNLNOLGT-UHFFFAOYSA-N tetrahydropyridine hydrochloride Natural products C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- UAXOELSVPTZZQG-UHFFFAOYSA-N tiglic acid Natural products CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/028—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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Abstract
本發明之目的係提供一種充分去除CMP後殘留於研磨對象物表面之雜質之手段。
本發明之研磨用組成物係以含有研磨粒或有機化合物(A)之研磨用組成物(A)研磨後所使用之研磨用組成物,其特徵係含有有機化合物(B)、pH調整劑、以及0~1質量%之研磨粒,前述有機化合物(B)係含有選自由氟原子、氧原子、氮原子及氯原子所組成之群選出之至少1種原子,且分子量為100以上。
Description
本發明係關於研磨用組成物。更詳言之,本發明係關於用以去除CMP後殘留於研磨對象物表面之雜質之技術。
近年來,隨著半導體基板表面之多層配線化,在製造裝置時,係利用物理研磨半導體基板進行平坦化之所謂化學機械研磨(Chemical Mechanical Polishing;CMP)技術。CMP係使用含二氧化矽或氧化鋁、氧化鈰等研磨粒、防腐蝕劑、界面活性劑等之研磨用組成物(漿料),使半導體基板等之研磨對象物(被研磨物)表面平坦化之方法,研磨對象物(被研磨物)為矽、多晶矽、矽氧化膜、矽氮化物、或由金屬等所成之配線、柱塞(plug)等。
CMP步驟後之半導體基板表面會殘留大量雜質(缺陷)。雜質包含源自CMP所使用之研磨用組成物之研磨粒、金屬、防腐蝕劑、界面活性劑等有機物、對研磨對象物的含矽材料、金屬配線或柱塞等進行研磨產生之含矽材料或金屬,進而由各種焊墊等產生之焊墊屑等有機物等。
半導體基板表面受該等雜質污染時,有對半導體之電特性造成不良影響,使裝置之信賴性降低之可能性。再者,有機物之污染顯著時,會有裝置遭破壞之虞。因此,必須在CMP步驟後導入洗淨步驟,自半導體基板表面去除該等雜質。
洗淨步驟中,係使用洗淨劑以自半導體基板表面去除雜質,迄今為止已開發出各種洗淨劑(參照專利文獻1)。
[專利文獻1]國際公開第2005/040324號(美國專利申請公開第2012/000485號說明書)
然而,即使以上述洗淨步驟,亦無法充分去除雜質,而有雜質殘留於半導體基板等研磨對象物表面之問題。
因此,本發明之目的係提供一種可充分去除CMP後殘留於研磨對象物表面之雜質之手段。
本發明人等為解決上述課題而進行積極研究。結果,發現CMP後,使用新穎的研磨用組成物進行研磨對象物之研磨,可顯著提高隨後之洗淨步驟中之洗淨效果,因而完成本發明。
亦即,本發明之研磨用組成物係以含有研磨粒或有機化合物(A)之研磨用組成物(A)研磨後所使用之研磨用組成物。而且,該研磨用組成物之特徵為含有有機化合物(B)、pH調整劑、以及0~1質量%之研磨粒,前述有機化合物(B)係含有選自由氟原子、氧原子、氮原子及氯原子所組成之群選出之至少1種原子,且分子量為100以上。
依據本發明,可充分去除CMP後殘留於研磨對象物表面之雜質。
以下,說明本發明之實施形態,但本發明並不僅受限於以下之形態。
本發明一實施形態之研磨用組成物係使用含有研磨粒或有機化合物(A)之研磨用組成物(A)研磨後所使用之研磨用組成物,其特徵係含有有機化合物(B)、pH調整劑、以及0~1質量%之研磨粒,前述有機化合物(B)係含有選自由氟原子、氧原子、氮原子及氯原子所組成之群選出之至少1種原子,且分子量為100以上。
又,本說明書中,本發明之研磨用組成物為了與研磨用組成物(A)區分,亦稱為「研磨用組成物(B)」。又,
「使用研磨用組成物(A)之研磨」、「使用研磨用組成物(B)之研磨」亦分別稱為「研磨(A)」、「研磨(B)」。
如上述,CMP(研磨(A))後之研磨對象物表面因源自CMP中使用之研磨用組成物(研磨用組成物(A))之研磨粒或金屬、防腐蝕劑、界面活性劑等之有機物、對研磨對象物的含矽材料、金屬配線或柱塞等進行研磨生成之含矽材料或金屬、進而由各種焊墊等生成之焊墊屑等之有機物等之雜質而受到污染。藉由將本形態之研磨用組成物(B)應用於附著有該等雜質之研磨對象物之研磨,可顯著提升隨後洗淨步驟中之洗淨效果,且可自研磨對象物表面充分去除雜質。
本形態之研磨用組成物(B)可發揮該種效果之詳細機制並不清楚,但本發明人等推測如下。但,本發明並不受限於上述機制。
研磨(A)中研磨對象物表面上附著有源自研磨用組成物(A)之研磨粒或有機化合物、因研磨研磨對象物生成之雜質、焊墊屑等,但該等雜質之附著認為係因雜質表面與研磨對象物表面帶電之電荷、或疏水性相互作用而引起。本形態之研磨用組成物(B)所含之有機化合物(B)之特徵為含有由氟原子、氧原子、氮原子及氯原子所組成之群選出之至少一種原子,因存在該等電性陰性度較高之原子而在分子內引起分極,使一部分成為親水性。且由於分子量為100以上,故亦成為具有疏水性部分。因此,藉由使用研磨用組成物(B)進行研磨,使有機化合物(B)與雜質置換,
且因疏水性相互作用而包圍雜質周圍並使其浮起,藉此容易地自研磨對象物表面去除雜質。且,有機化合物(B)係如上述般分子之一部分為親水性,故可提高研磨對象物表面之潤濕性,且隨後以水等洗淨,可容易地去除有機化合物(B)本身。以下,針對本形態之研磨用組成物(B)之各構成成分加以詳細說明。
有機化合物(B)具有在隨後之洗淨步驟中容易去除因CMP而殘留於研磨對象物表面之雜質之功能。有機化合物(B)之特徵係含有由氟原子、氧原子、氮原子及氯原子所組之群選出之至少一種原子。有機化合物(B)藉由具有該電性陰性度較高之原子,而在分子內引起分極,可使一部分具有親水性。結果,使雜質容易去除,並且可提高研磨對象物表面之潤濕性。其中,基於更易引起分極之觀點,有機化合物(B)較好具有由氟原子、氧原子及氮原子所組成之群選出之至少一種原子。
此外,有機化合物(B)中所含之官能基(含氧原子及/或氮原子之官能基)亦無特別限制,列舉為羥基、胺基等。其中,基於提高潤濕性之觀點,有機化合物(B)較好具有羥基。再者具有羥基時,有機化合物(B)較好1分子中具有3個以上之羥基。且,基於防止再附著之觀點,有機化合物(B)較好具有1個以上之胺基。進而具有胺基時,有機化合物(B)亦可具有環狀胺構造。
有機化合物(B)之具體例,作為具有羥基之有機化合物列舉為羥基乙基纖維素(HEC)、聚乙烯醇(PVA)、聚丙三醇、聚氧伸乙基聚丙三醇醚等。作為具有胺基之有機化合物列舉為聚氧伸乙基烷基胺、聚氧伸乙基脂肪酸醯胺醚等等。作為具有環狀胺構造之有機化合物列舉為聚乙烯吡咯啶酮(PVP)等。具有氟原子之有機化合物列舉為氟化烷基取代之二醇、部分氟化醇取代之二醇等。作為具有氯原子之化合物列舉為氯化烷基取代之二醇、部分氯化醇取代之二醇等。
上述有機化合物(B)亦可為以習知方法合成者,亦可使用市售品。其中,基於雜質之去除效果、取得容易等之觀點,較好為羥基乙基纖維素(HEC)、聚乙烯醇(PVA)、聚乙烯吡咯啶酮(PVP)、聚氧伸乙基(6)聚丙三醇醚、聚氧伸乙基月桂酸醯胺醚、聚氧伸乙基硬脂基胺、部分氟化醇取代之二醇等。又,上述有機化合物(B)可單獨使用1種,亦可組合2種以上使用。
有機化合物(B)之分子量(重量平均分子量)必須為100以上,較好為100~100000,更好為300~80000,又更好為500~50000。分子量(重量平均分子量)未達100時,無法具有疏水性部分,且無法發揮充分之雜質去除效果,故分子量為100以上係必要條件。另一方面,分子量(重量平均分子量)若為100000以下,則可分散於水中。又,本說明書中,重量平均分子量係採用以GPC-MALS法測定之值。又,較低分子量之水溶性聚合物之情況下,亦可藉
NMR法測定重量平均分子量。
有機化合物(B)之含量並無特別限制,但相對於研磨用組成物之總量,較好為0.0001~1質量%,更好為0.0005~0.8質量%,又更好為0.001~0.5質量%。有機化合物(B)之含量若為0.0001質量%以上,則可充分去除研磨對象物表面之雜質(尤其是有機物)。另一方面,含量若為1質量%以下,則可抑制研磨(B)後有機化合物(B)殘留於研磨對象物表面。
本形態之研磨用組成物必須含有pH調整劑,藉此將研磨用組成物調整成期望之pH範圍。又,研磨用組成物之pH並無特別限制,但較好為1~13,更好為1.5~12.5,又更好為2~12。pH若為2以上,則處理較容易。另一方面,pH若為12以下,則含有研磨粒時,可抑制研磨粒之溶解。
作為pH調整劑可適當地採用本技術領域中作為pH調整劑使用之酸或鹼。又,酸或鹼可為無機化合物及有機化合物之任一種。
酸列舉為例如硫酸、硝酸、硼酸、碳酸、次磷酸、亞磷酸及磷酸等無機酸;甲酸、乙酸、丙酸、丁酸、戊酸、2-甲基丁酸、正己酸、3,3-二甲基丁酸、2-乙基丁酸、4-甲基戊酸、正庚酸、2-甲基己酸、正辛酸、2-乙基己酸、苯甲酸、乙醇酸、水楊酸、甘油酸、草酸、丙二酸、琥珀
酸、戊二酸、己二酸、庚二酸、馬來酸、鄰苯二甲酸、蘋果酸、酒石酸、檸檬酸及乳酸等羧酸,以及甲烷磺酸、乙烷磺酸及羥乙基磺酸等有機硫酸等之有機酸等。鹼列舉為例如氫氧化鉀等鹼金屬之氫氧化物、氨水、乙二胺及哌嗪等胺,以及四甲基銨及四乙基銨等之四級銨鹽。又,該等酸或鹼可單獨使用1種,亦可組合2種以上使用。
研磨用組成物中之酸或鹼之含量只要是使研磨用組成物成為上述pH範圍之量,則無特別限制。
本形態之研磨用組成物較好含有用於使各成分分散或溶解之分散介質或溶劑。更好,溶劑為水。基於抑制阻礙其他成分作用之觀點,較好為儘可能不含雜質之水,具體而言較好為以離子交換樹脂去除雜質離子後,通過過濾器去除異物之純水或超純水,或蒸餾水。
本形態之研磨用組成物亦可視需要進一步含研磨粒。但,為了進一步提高本發明之效果,較好有機化合物(B)以外之分子量為100以上之有機物之濃度為低濃度,較好實質上不含。
尤其,本形態之研磨用組成物較好為實質上不含研磨粒者。又,該研磨粒係與後述之研磨用組成物(A)中所含之研磨粒相同,且詳細說明於研磨用組成物(A)中。具體
而言,研磨粒之含量相對於研磨用組成物之總量,必須為1質量%以下,較好為0.8質量%以下,更好為0.5質量%以下。研磨粒含量超過1質量%時,即使於後續之洗淨步驟亦有研磨粒殘留在研磨對象物表面之可能性。
本形態之研磨用組成物(B)之製造方法並無特別限制,可藉由在水中攪拌混合上述各成分而獲得。混合各成分時之溫度並無特別限制,較好為10~40℃,亦可加熱以提高溶解速度。又,混合時間亦無特別限制。
研磨用組成物(A)含有研磨粒或有機化合物(A)之至少一種。
研磨粒具有機械研磨研磨對象物之作用,且提高以研磨用組成物對研磨對象物之研磨速度。
研磨粒可為無機粒子、有機粒子及有機無機複合粒子之任一種。無機粒子列舉為例如由二氧化矽、氧化鋁、氧化鈰、氧化鈦等金屬氧化物所成之粒子,以及氮化矽粒子、碳化矽粒子、氮化硼粒子。有機粒子之具體例列舉為例如聚甲基丙烯酸甲酯(PMMA)粒子。其中,基於取得容易且成本之觀點,以二氧化矽較佳,更好為膠體二氧化矽。又,該等研磨粒可單獨使用1種,亦可組合2種以上使用。另外,研磨粒可使用市售品亦可使用合成品。
研磨粒亦可經表面修飾。通常之膠體二氧化矽由於在酸性條件下之Zeta電位值接近於零,故在酸性條件下二
氧化矽粒子彼此間不會靜電排斥而容易引起凝聚。相對於此,經表面修飾為即使在酸性條件下具有Zeta電位較大之負值的研磨粒,在酸性條件下相互間強烈排斥而成良好分散之結果,提高了研磨用組成物之保存安定性。如此之表面修飾研磨粒可藉由例如使鋁、鈦或鋯等金屬或該等之氧化物與研磨粒混合而摻雜於研磨粒之表面而獲得。
其中,最好為表面固定化有有機酸之膠體二氧化矽(有機酸修飾之膠體二氧化矽)。有機酸對研磨用組成物中所含之膠體二氧化矽表面之固定化係藉由例如使有機酸之官能基化學鍵結於膠體二氧化矽表面而進行。僅單使膠體二氧化矽與有機酸共存,無法達到有機酸朝膠體二氧化矽之固定化。例如使有機酸之一種的磺酸固定化而成之膠體二氧化矽(磺酸修飾之膠體二氧化矽)可藉“Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups”,Chem.Commun.246-247(2003)中所記載之方法調製。具體而言,使3-巰丙基三甲氧基矽烷等之具有硫醇基之矽烷偶合劑偶合於膠體二氧化矽上後,以過氧化氫使硫醇基氧化,藉此可獲得磺酸固定化於表面之膠體二氧化矽。或者,若使羧酸固定化於膠體二氧化矽上,則可藉例如“Novel Silane Coupling Agents Containing a Photolabile 2-Nitrobenzyl Ester for Introduction of a Carboxy Group on the Surface of Silica Gel”,Chemistry Letters,3,228-229(2000)中所記載之方法進行。具體而言,在將含有光反應性2-硝基苄酯之矽烷偶合劑偶合於膠體二氧化矽後,
藉由光照射,可獲得使羧酸固定化於表面之膠體二氧化矽。
研磨粒之平均一次粒徑之下限較好為5nm以上,更好為7nm以上,又更好為10nm以上。且,研磨粒之平均一次粒徑之上限較好為500nm以下,更好為100nm以下,又更好為70nm以下。若為該範圍,則研磨用組成物對研磨對象物之研磨速度提高,且可進一步抑制使用研磨用組成物研磨後之研磨對象物表面產生凹陷。又,研磨粒之平均一次粒徑係採用例如基於以BET法測定之研磨粒之比表面積而算出。
研磨用組成物(A)中含有研磨粒時,研磨粒含量之下限較好為0.005質量%以上,更好為0.5質量%以上,又更好為1質量%以上,最好為3質量%以上。且,研磨粒含量之上限較好為50質量%以下,更好為30質量%以下,又更好為15質量%以下。若為該範圍,則可提高研磨對象物之研磨速度,且抑制研磨用組成物(A)之成本,可進一步抑制使用研磨用組成物(A)研磨後於研磨對象物表面上產生凹陷。
有機化合物(A)並無特別限制,列舉為用於抑制研磨速率或蝕刻速率而添加之藥劑等,具體而言列舉為對金屬之金屬防腐蝕劑、對含矽之材料之2元醇等。
金屬防腐蝕劑並無特別限制,但較好為雜環化合物或界面活性劑。雜環化合物中之雜環之員數並無特別限制。另外,雜環化合物可為單環化合物,亦可為具有縮合環之
多環化合物。
可作為金屬防腐蝕劑使用之雜環化合物列舉為例如吡咯化合物、吡唑化合物、咪唑化合物、三唑化合物、四唑化合物、吡啶化合物、哌啶化合物、嗒嗪化合物、吡嗪化合物、吲哚嗪(indolizine)化合物、吲哚化合物、異吲哚化合物、吲唑化合物、嘌呤化合物、喹嗪(quinolizine)化合物、喹啉化合物、異喹啉化合物、萘啶化合物、酞嗪化合物、喹喔啉化合物、喹唑啉化合物、噌啉化合物、喋啶化合物、噻唑化合物、異噻唑化合物、噁唑化合物、異噁唑化合物、呋咱化合物等含氮雜環化合物。
進一步列舉具體例時,吡唑化合物列舉為例如1H-吡唑、4-硝基-3-吡唑羧酸、3,5-吡唑羧酸、3-胺基-5-苯基吡唑、5-胺基-3-苯基吡唑、3,4,5-三溴吡唑、3-胺基吡唑、3,5-二甲基吡唑、3,5-二甲基-1-羥基甲基吡唑、3-甲基吡唑、1-甲基吡唑、3-胺基-5-甲基吡唑、4-胺基-吡唑并[3,4-d]嘧啶、4-氯-1H-吡唑并[3,4-d]嘧啶、3,4-二羥基-6-甲基吡唑并(3,4-b)-吡啶、6-甲基-1H-吡唑并[3,4-b]吡啶-3-胺等。
咪唑化合物列舉為例如咪唑、1-甲基咪唑、2-甲基咪唑、4-甲基咪唑、1,2-二甲基吡唑、2-乙基-4-甲基咪唑、2-異丙基咪唑、苯并咪唑、5,6-二甲基苯并咪唑、2-胺基苯并咪唑、2-氯苯并咪唑、2-甲基苯并咪唑、2-(1-羥基乙基)苯并咪唑、2-羥基苯并咪唑、2-苯基苯并咪唑、2,5-二甲基苯并咪唑、5-甲基苯并咪唑、5-硝基苯并咪唑等。
三唑化合物列舉為例如1,2,3-三唑(1H-BTA)、1,2,4-三唑、1-甲基-1,2,4-三唑、甲基-1H-1,2,4-三唑-3-羧酸酯、1,2,4-三唑-3-羧酸、1,2,4-三唑-3-羧酸甲酯、1H-1,2,4-三唑-3-硫醇、3,5-二胺基-1H-1,2,4-三唑、3-胺基-1,2,4-三唑-5-硫醇、3-胺基-1H-1,2,4-三唑、3-胺基-5-苄基-4H-1,2,4-三唑、3-胺基-5-甲基-4H-1,2,4-三唑、3-硝基-1,2,4-三唑、3-溴-5-硝基-1,2,4-三唑、4-(1,2,4-三唑-1-基)苯酚、4-胺基-1,2,4-三唑、4-胺基-3,5-二丙基-4H-1,2,4-三唑、4-胺基-3,5-二甲基-4H-1,2,4-三唑、4-胺基-3,5-二戊基-4H-1,2,4-三唑、5-甲基-1,2,4-三唑-3,4-二胺、1H-苯并三唑、1-羥基苯并三唑、1-胺基苯并三唑、1-羧基苯并三唑、5-氯-1H-苯并三唑、5-硝基-1H-苯并三唑、5-羧基-1H-苯并三唑、5-甲基-1H-苯并三唑、5,6-二甲基-1H-苯并三唑、1-(1’,2’-二羧基乙基)苯并三唑、1-[N,N-雙(羥基乙基)胺基甲基]苯并三唑、1-[N,N-雙(羥基乙基)胺基甲基]-5-甲基苯并三唑、1-[N,N-雙(羥基乙基)胺基甲基]-4-甲基苯并三唑等。
四唑化合物列舉為例如1H-四唑、5-甲基四唑、5-胺基四唑、5-苯基四唑等
吲唑化合物列舉為例如1H-吲唑、5-胺基-1H-吲唑、5-硝基-1H-吲唑、5-羥基-1H-吲唑、6-胺基-1H-吲唑、6-硝基-1H-吲唑、6-羥基-1H-吲唑、3-羧基-5-甲基-1H-吲唑等。
吲哚化合物列舉為例如1H-吲哚、1-甲基-1H-吲哚、
2-甲基-1H-吲哚、3-甲基-1H-吲哚、4-甲基-1H-吲哚、5-甲基-1H-吲哚、6-甲基-1H-吲哚、7-甲基-1H-吲哚、4-胺基-1H-吲哚、5-胺基-1H-吲哚、6-胺基-1H-吲哚、7-胺基-1H-吲哚、4-羥基-1H-吲除、5-羥基-1H-吲哚、6-羥基-1H-吲哚、7-羥基-1H-吲哚、4-甲氧基-1H-吲哚、5-甲氧基-1H-吲哚、6-甲氧基-1H-吲哚、7-甲氧基-1H-吲哚、4-氯-1H-吲哚、5-氯-1H-吲哚、6-氯-1H-吲哚、7-氯-1H-吲哚、4-羧基-1H-吲哚、5-羧基-1H-吲哚、6-羧基-1H-吲哚、7-羧基-1H-吲哚、4-硝基-1H-吲哚、5-硝基-1H-吲哚、6-硝基-1H-吲哚、7-硝基-1H-吲哚、4-腈-1H-吲哚、5-腈-1H-吲哚、6-腈-1H-吲哚、7-腈-1H-吲哚、2,5-二甲基-1H-吲哚、1,2-二甲基-1H-吲哚、1,3-二甲基-1H-吲哚、2,3-二甲基-1H-吲哚、5-胺基-2,3-二甲基-1H-吲哚、7-乙基-1H-吲哚、5-(胺基甲基)吲哚、2-甲基-5-胺基-1H-吲哚、3-羥基甲基-1H-吲哚、6-異丙基-1H-吲哚、5-氯-2-甲基-1H-吲哚等。
該等雜環化合物中以三唑化合物較佳,尤其較好為1H-苯并三唑、5-甲基-1H-苯并三唑、5,6-二甲基-1H-苯并三唑、1-[N,N-雙(羥基乙基)胺基甲基]-5-甲基苯并三唑、1-[N,N-雙(羥基乙基)胺基甲基]-4-甲基苯并三唑、1,2,3-三唑、1,2,4-三唑。該等雜環化合物由於對研磨對象物表面之化學或物理之吸附力高,故可於研磨對象物表面上形成更堅固的保護膜。此在提高使用本發明之研磨用組成物(B)研磨後之研磨對象物表面之平滑性方面有利。又,金
屬防腐蝕劑可單獨使用或亦可混合2種以上使用。且,金屬防腐蝕劑可使用市售品亦可使用合成品。
此外,作為金屬防腐蝕劑使用之界面活性劑列舉為陰離子性界面活性劑、陽離子性界面活性劑、兩性界面活性劑、非離子性界面活性劑。
陰離子性界面活性劑列舉為例如聚氧伸乙基烷基醚乙酸、聚氧伸乙基烷基硫酸酯、烷基硫酸酯、聚氧伸乙基烷基醚硫酸、烷基醚硫酸、烷基苯磺酸、烷基磷酸酯、聚氧伸乙基烷基磷酸酯、聚氧伸乙基磺基琥珀酸、烷基磺基琥珀酸、烷基萘磺酸、烷基二苯基醚二磺酸、及該等之鹽等。
陽離子性界面活性劑列舉為例如烷基三甲基銨鹽、烷基二甲基銨鹽、烷基苄基二甲基銨鹽、及烷基胺鹽等。
兩性界面活性劑列舉為例如烷基甜菜鹼、烷基氧化胺等。
非離子性界面活性劑之具體例列舉為例如聚氧伸乙基烷基醚等聚氧伸烷基烷基醚、山梨糖醇酐脂肪酸酯、甘油脂肪酸酯、聚氧伸乙基脂肪酸酯、聚氧伸乙基烷基胺、烷基烷醇醯胺等。其中以聚氧伸烷基烷基醚較佳。
該等中較佳之界面活性劑為聚氧伸乙基烷基醚乙酸、聚氧伸乙基烷基醚硫酸鹽、烷基醚硫酸鹽、烷基苯磺酸鹽。該等界面活性劑由於對研磨對象物表面之化學或物理的吸附力高,故可在研磨對象物表面形成更堅固的保護膜。此在提高使用本發明之研磨用組成物(B)研磨後之研
磨對象物表面之平滑性方面有利。
研磨用組成物(A)中之金屬防腐蝕劑之含量下限較好為0.001g/L以上,更好為0.005g/L以上,又更好為0.01g/L以上。且,研磨用組成物(A)中之金屬防腐蝕劑含量之上限較好為10g/L以下,更好為5g/L以下,又更好為2g/L以下。若為該範圍,則可防止金屬溶解,且抑制研磨對象物表面之表面粗糙等之表面狀態之惡化。
2元醇列舉為甲二醇、乙二醇(1,2-乙二醇)、1,2-丙二醇、丙二醇(1,3-丙二醇)、1,2-丁二醇、1,4-丁二醇、1,2-戊二醇、1,5-戊二醇、1,6-己二醇、1,2-己二醇、1,5-己二醇、2,5-己二醇、1,7-庚二醇、1,8-辛二醇、1,2-辛二醇、1,9-壬二醇、1,2-癸二醇、1,10-癸二醇、1,12-十二烷二醇、1,2-十二烷二醇、1,14-十四烷二醇、1,2-十四烷二醇、1,16-十六烷二醇、1,2-十六烷二醇、2-甲基-2,4-戊二醇、3-甲基-1,5-戊二醇、2-甲基-2-丙基-1,3-丙二醇、2,4-二甲基-2,4-二甲基戊二醇、2,2-二乙基-1,3-丙二醇、2,2,4-三甲基-1,3-戊二醇、二羥甲基辛烷、2-乙基-1,3-己二醇、2,5-二甲基-2,5-己二醇、2-甲基-1,8-辛二醇、2-丁基-2-乙基-1,3-丙二醇、2,4-二乙基-1,5-戊二醇、1,2-環己二醇、1,4-環己二醇、1,4-環己烷二甲醇、1,2-環庚烷二醇、三環癸烷二甲醇、氫化兒茶酚、氫化間苯二酚、氫化氫醌、二乙二醇、聚乙二醇、聚丙二醇等聚烷二醇、聚酯多元醇等。
該等中,較好為乙二醇、丙二醇、二乙二醇、聚乙二
醇、聚烷二醇。
2元醇之分子量較好未達20000。分子量為20000以上時,難以均勻分散或溶解於分散介質或溶劑中,有因成為固體析出等之影響而難以作成漿料處理之情況。且,例如使用聚乙二醇等聚合物作為2元醇時,分子量係使用重量平均分子量,其重量平均分子量較好未達20000,更好為10000以下,又更好為5000以下。若為該重量平均分子量之範圍,則可均勻分散或溶解於分散介質或溶劑中,且可充分發揮抑制包含與多結晶矽或TEOS(四乙基原矽酸鹽)等之研磨對象物不同材料之層之研磨速度之優點。又,本說明書中上述聚合物之重量平均分子量係採用層析法(GPC法)測定之值。
研磨用組成物(A)中之2元醇含量較好為0.0001質量%以上,更好為0.0005質量%以上,又更好為0.001質量%以上。隨著2元醇含量變多,有進一步抑制包含與多結晶矽或TEOS等研磨對象物不同之材料之層的研磨速度之優點。且,研磨用組成物(A)中之2元醇含量較好為10質量%以下,更好為5質量%以下,又更好為1質量%以下。隨著2元醇之含量減少,有可避免研磨粒凝聚之優點。
研磨用組成物(A)中,用於使各成分分散或溶解之分散介質或溶劑可使用與上述研磨用組成物(B)中之分散介質或溶劑相同者,故此處省略說明。另外,亦可視需要,使用與研磨用組成物(B)相同之pH調整劑,進行pH調
整。
又,本形態中,研磨用組成物(A)之製造方法及研磨(A)之方法並無特別限制,可適當地採用本技術領域中之CMP等之技術。
依據本發明之另一形態,係提供使用上述研磨用組成物(B)研磨研磨對象物之研磨方法。且,依據另一其他形態,係提供包含以該研磨方法研磨研磨對象物之步驟之基板的製造方法。以下,針對本形態之研磨方法及基板之製造方法加以說明。又,本形態中之研磨對象物係經過使用上述之研磨用組成物(A)之研磨(A)之研磨對象物,較好為研磨(A)後,洗淨步驟前之研磨對象物。
本形態中之研磨對象物並無特別限制,較好為包含金屬、或IV族材料、矽材料之基板等。研磨該研磨對象物而製造基板。金屬列舉為例如Cu、W、Al、Ta、TiN等。IV族材料之例列舉為Ge(鍺)、SiGe(矽鍺)等。且,矽材料之例列舉為矽、多晶矽、氧化矽、氮化矽等。
其中,基於進一步獲得本發明效果之觀點,研磨對象物較好為疏水性物質。本說明書中,所謂疏水性物質意指在研磨前使用協和界面科學股份有限公司製之晶圓洗淨處理評價裝置CA-X200將水滴滴加於物質表面,進行拍
攝,並使用θ/2法求出「接觸角」時,「接觸角」超過40°之物質。疏水性物質列舉為例如氧化物以外之物質,列舉為Cu、W、Al、Ta、TiN等金屬或多晶矽、氮化矽等矽材料。其中,基於需要更嚴格減低有機物或研磨粒殘留之觀點,較好為矽、多晶矽、氮化矽。
研磨裝置可使用安裝有可保持具有研磨對象物之基板等之載具與可改變轉數之馬達等,且具有可貼附研磨墊(研磨布)之研磨壓盤之一般研磨裝置。
研磨墊可無特別限制的使用一般不織布、聚胺基甲酸酯及多孔質氟樹脂等。研磨墊中較好施以可使研磨液積存之溝槽加工。
本形態中,研磨墊較好為軟質墊,具體而言較好為墊硬度為60以下,更好為50以下。藉由使用該軟質墊可減低因研磨所致之刮傷(刮痕)。又,本說明書中,墊硬度意指研磨墊之蕭氏(Shore)D硬度。
研磨條件亦無特別限制,例如研磨壓盤之轉數,研磨頭轉數較好為10~500rpm,對具有研磨對象物之基板施加之壓力(研磨壓力)較好為0.5~10psi。將研磨用組成物供給於研磨墊之方法亦無特別限制,例如可採用泵等連續供給之方法(源源流入)。其供給量並無限制,但較好隨時以本發明之研磨用組成物覆蓋研磨墊表面,更好為10~10000ml/分鐘左右。研磨時間亦無特別限制,針對使用研磨用組成物(B)之步驟較好為5~60秒。若為該範圍,則可充分去除雜質。
本形態中,較好在研磨結束後,設置洗淨研磨對象物表面之洗淨步驟。所謂洗淨步驟係邊對晶圓施加水或特殊之洗淨液,同時邊以PVA海綿等刷施加壓力之步驟。又,洗淨後之研磨對象物較好以旋轉乾燥機等甩掉附著於表面上之水滴予以乾燥。
以下,以實施例更詳細說明本發明,但本發明並不僅受限於以下實施例。
使用研磨用組成物A1(組成;磺酸修飾之膠體二氧化矽(以“Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups”,Chem.Commun.246-247(2003)中所記載之方法製作,一次粒徑30nm,二次粒徑60nm,以下同)6質量%、聚乙二醇(分子量400)0.02質量%、溶劑:水,以60%硝酸調整成pH=2)作為研磨用組成物(A),且以下述條件進行研磨。
研磨對象物:200mm多晶矽晶圓
研磨裝置:200mm晶圓用單面研磨裝置
研磨墊:發泡聚胺基甲酸酯製之墊(硬度90)
研磨壓力:2.3psi(1psi=6894.76Pa,以下同)
研磨壓盤轉數:93rpm
研磨用組成物之供給:源源流入
研磨用組成物之供給量:100ml/分鐘
研磨頭轉數:87rpm
研磨時間:60秒
針對使用上述研磨用組成物(A)研磨(CMP)後之多晶矽,使用研磨用組成物B1(組成;聚乙烯醇(分子量10000)0.1質量%、溶劑;水、以檸檬酸調整成pH=4)作為研磨用組成物(B),且以下述條件進行研磨。
研磨裝置:200mm晶圓用單面研磨裝置
研磨墊:發泡聚胺基甲酸酯製之墊(硬度90)
研磨壓力:1.5psi
研磨壓盤轉數:88rpm
研磨用組成物之供給:源源流入
漿料供給量:100ml/分鐘
研磨頭轉數:85rpm
研磨時間:10秒
邊將水加於晶圓上邊以PVA海綿施加壓力60秒。
上述〈使用研磨用組成物(B)之研磨〉中,除了研磨時間設為15秒以外,餘以與實施例1相同之方法進行研磨及洗淨。
除了未進行上述〈使用研磨用組成物(B)之研磨〉以外,餘以與實施例1相同之方法進行研磨及洗淨。
使用研磨用組成物A2(組成;膠體二氧化矽(一次粒徑90nm,二次粒徑175nm)3質量%、二聚氧伸乙基(6)月桂基醚磷酸0.07質量%、溶劑:水,以氫氧化四甲基銨(TMAH)調整成pH=11)作為研磨用組成物(A),且以下述條件進行研磨。
研磨對象物:300mm多晶矽晶圓
研磨裝置:300mm晶圓用單面研磨裝置
研磨墊:發泡聚胺基甲酸酯製之墊(硬度90)
研磨壓力:2.0psi
研磨壓盤轉數:63rpm
研磨用組成物之供給:源源流入
研磨用組成物之供給量:300ml/分鐘
研磨頭轉數:57rpm
研磨時間:60秒
針對使用上述研磨用組成物(A)研磨(CMP)後之多晶矽,使用研磨用組成物B2(組成;羥基乙基纖維素(分子量1300000)0.03質量%、溶劑;水、以氨水調整成pH=10)作為研磨用組成物(B),且以下述條件進行研磨。
研磨裝置:300mm晶圓用單面研磨裝置
研磨墊:羊毛氈類研磨墊(硬度10)
研磨壓力:1.5psi
研磨壓盤轉數:88rpm
研磨用組成物之供給:源源流入
漿料供給量:300ml/分鐘
研磨頭轉數:85rpm
研磨時間:30秒
上述〈使用研磨用組成物(B)之研磨〉中,除了使用羊毛氈類研磨墊(硬度42)作為研磨墊以外,餘以與實施例3相同之方法進行研磨及洗淨。
使用研磨用組成物A3(組成;31%過氧化氫水溶液1.0
質量%、上述磺酸修飾之膠體二氧化矽1.2質量%、聚乙二醇(分子量400)0.0005質量%,溶劑:水,以檸檬酸調整成pH=2)作為研磨用組成物(A),且以下述條件進行研磨。
研磨對象物:300mm之TiN晶圓、300mm之Si晶圓
研磨裝置:300mm晶圓用單面研磨裝置
研磨墊:發泡聚胺基甲酸酯製之墊(硬度90)
研磨壓力:1.5psi
研磨壓盤轉數:93rpm
研磨用組成物之供給:源源流入
研磨用組成物之供給量:200ml/分鐘
研磨頭轉數:87rpm
研磨時間:60秒
針對使用上述研磨用組成物(A)研磨(CMP)後之TiN晶圓、Si晶圓,使用上述研磨用組成物B2作為研磨用組成物(B),且以下述條件進行研磨。
研磨裝置:300mm晶圓用單面研磨裝置
研磨墊:羊毛氈類研磨墊(硬度42)
研磨壓力:1.5psi
研磨壓盤轉數:88rpm
研磨用組成物之供給:源源流入
漿料供給量:300ml/分鐘
研磨頭轉數:85rpm
研磨時間:20秒
上述〈使用研磨用組成物(B)之研磨〉中,除了使用研磨用組成物B3(組成;聚乙烯醇(分子量10000)0.1質量%,溶劑:水,以氨水調整成pH=10)作為研磨用組成物(B)以外,餘以與實施例5相同之方法進行研磨及洗淨。
上述〈使用研磨用組成物(B)之研磨〉中,除了使用研磨用組成物B4(組成;聚乙烯吡咯啶酮(分子量40000)0.6質量%,溶劑:水,以氨水調整成pH=10)作為研磨用組成物(B)以外,餘以與實施例5相同之方法進行研磨及洗淨。
除了未進行上述〈使用研磨用組成物(B)之研磨〉以外,餘以與實施例5相同之方法進行研磨及洗淨。
使用研磨用組成物A4(組成;膠體二氧化矽(一次粒徑30nm,二次粒徑60nm)5質量%、溶劑:水,以氫氧化四
甲基銨(TMAH)調整成pH=11)作為研磨用組成物(A),且以下述條件進行研磨。
研磨對象物:多晶矽晶圓
研磨裝置:300mm晶圓用單面研磨裝置
研磨墊:發泡聚胺基甲酸酯製之墊(硬度90)
研磨壓力:1.8psi
研磨壓盤轉數:97rpm
研磨用組成物之供給:源源流入
研磨用組成物之供給量:200ml/分鐘
研磨頭轉數:103rpm
研磨時間:60秒
針對使用上述研磨用組成物(A)研磨(CMP)後之多晶矽,使用研磨用組成物B5(組成;聚氧伸乙基(6)聚丙三醇醚(分子量450)0.1質量%、溶劑:水、以氫氧化鉀調整成pH=10)作為研磨用組成物(B),且以下述條件進行研磨。
研磨裝置:300mm晶圓用單面研磨裝置
研磨墊:發泡聚胺基甲酸酯製之墊(硬度90)
研磨壓力:1.5psi
研磨壓盤轉數:88rpm
研磨用組成物之供給:源源流入
漿料供給量:200ml/分鐘
研磨頭轉數:85rpm
研磨時間:15秒
上述〈使用研磨用組成物(B)之研磨〉中,除了使用研磨用組成物B6(聚氧伸乙基(6)月桂酸醯胺醚(分子量467)0.1質量%,溶劑:水,以氫氧化鉀調整成pH=10)作為研磨用組成物(B)以外,餘以與實施例8相同之方法進行研磨及洗淨。
上述〈使用研磨用組成物(B)之研磨〉中,除了使用研磨用組成物B7(聚氧伸乙基(6)硬脂基胺(分子量533)0.1質量%,溶劑:水,以氫氧化鉀調整成pH=10)作為研磨用組成物(B)以外,餘以與實施例8相同之方法進行研磨及洗淨。
上述〈使用研磨用組成物(B)之研磨〉中,除了使用研磨用組成物B8(部分氟化醇取代之二醇(F(CF2)6-(CH2-CH2O)6-H)(分子量584)0.1質量%,溶劑:水,以氫氧化鉀調整成pH=10)作為研磨用組成物(B)以外,餘以與實施例8相同之方法進行研磨及洗淨。
除了未進行上述〈使用研磨用組成物(B)之研磨〉以外,餘以與實施例8相同之方法進行研磨及洗淨。
使用晶圓表面檢查裝置(SP-1,KLA-Tencor公司製),測定評價為0.13μm以上之尺寸之缺陷。
使用θ/2法進行水接觸角之測定。又,測定係使用協和界面科學股份有限公司製之晶圓洗淨處理評價裝置CA-X200。
結果示於表1~4。
研磨用組成物A1:磺酸修飾之膠體二氧化矽6質量%聚乙二醇(分子量400)0.02質量%以硝酸調整成pH=2
研磨用組成物B1:聚乙烯醇(分子量10000)0.1質量%以檸檬酸調整成pH=4
研磨用組成物A2:膠體二氧化矽3質量%二聚氧伸乙基(6)月桂基醚磷酸0.07質量%以TMAH調整成pH=11
研磨用組成物B2:羥基乙基纖維素(分子量1300000)0.03質量%以氨水調整成pH=10
研磨用組成物A3:31%過氧化氫水溶液1.0質量%磺酸修飾之膠體二氧化矽1.2質量%聚乙二醇(分子量400)0.0005質量%以檸檬酸調整成pH=2
研磨用組成物B2:羥基乙基纖維素(分子量1300000)0.03質量%以氨水調整成pH=10
研磨用組成物B3:聚乙烯醇(分子量10000)0.1質量%以氨水調整成pH=10
研磨用組成物B4:聚乙烯吡咯啶酮(分子量40000)0.6質量%以氨水調整成pH=10
研磨用組成物A4:膠體二氧化矽5質量%以TMAH調整成pH=11
研磨用組成物B5:聚氧伸乙基(6)聚丙三醇醚(分子量450)0.1質量%以氫氧化鉀調整成pH=10
研磨用組成物B6:聚氧伸乙基(6)月桂酸醯胺醚(分子量467)0.1質量%以氫氧化鉀調整成pH=10
研磨用組成物B7:聚氧伸乙基(6)硬脂基胺(分子量533)0.1質量%以氫氧化鉀調整成pH=10
研磨用組成物B8:部分氟化醇取代之二醇(分子量584)0.1質量%以氫氧化鉀調整成pH=10
原子量係針對H、C、O、N、F各原子作為1、12、16、14、19算出分子量
如表1~4所示,藉由使用本發明之研磨用組成物(B),顯示提高研磨對象物表面之潤濕性,且可充分去除雜質(缺陷)。
本申請案係基於2014年3月28日申請之日本專利申請案第2014-069279號,其揭示內容全文以參照加以援用。
Claims (6)
- 一種研磨用組成物,其係以含有研磨粒或有機化合物(A)之研磨用組成物(A)研磨後所使用之研磨用組成物,其特徵為含有有機化合物(B)、pH調整劑、以及0~1質量%之研磨粒,前述有機化合物(B)係含有選自由氟原子、氧原子、氮原子及氯原子所組成之群選出之至少1種原子,且分子量為100以上。
- 如請求項1之研磨用組成物,其中前述有機化合物(B)具有3個以上之羥基。
- 如請求項1或2之研磨用組成物,其中前述有機化合物(B)具有1個以上之胺基。
- 如請求項1~3中任一項之研磨用組成物,其中研磨對象物為疏水性物質。
- 一種研磨方法,其係使用如請求項1~4中任一項之研磨用組成物研磨研磨對象物。
- 一種基板之製造方法,其包含以如請求項5之研磨方法研磨研磨對象物之步驟。
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SG188597A1 (en) * | 2010-09-24 | 2013-04-30 | Fujimi Inc | Composition for polishing and composition for rinsing |
JP2012156181A (ja) * | 2011-01-24 | 2012-08-16 | Hitachi Chem Co Ltd | 半導体基板用洗浄液及びそれを用いた洗浄方法 |
US20130053291A1 (en) * | 2011-08-22 | 2013-02-28 | Atsushi Otake | Composition for cleaning substrates post-chemical mechanical polishing |
SG11201406961PA (en) | 2012-04-27 | 2014-11-27 | Wako Pure Chem Ind Ltd | Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface |
JP2012145968A (ja) | 2012-05-08 | 2012-08-02 | Asahi Kasei Chemicals Corp | リソグラフィー材料およびレジストパターンの製造方法 |
-
2014
- 2014-03-28 JP JP2014069279A patent/JP6343160B2/ja active Active
-
2015
- 2015-01-30 KR KR1020217040784A patent/KR102451385B1/ko active IP Right Grant
- 2015-01-30 CN CN201580016859.4A patent/CN106133104A/zh active Pending
- 2015-01-30 SG SG11201607553QA patent/SG11201607553QA/en unknown
- 2015-01-30 US US15/129,326 patent/US10144907B2/en active Active
- 2015-01-30 WO PCT/JP2015/052761 patent/WO2015146282A1/ja active Application Filing
- 2015-01-30 EP EP15769785.5A patent/EP3124570B1/en active Active
- 2015-01-30 KR KR1020217040785A patent/KR20210154887A/ko not_active Application Discontinuation
- 2015-01-30 KR KR1020167026324A patent/KR20160138049A/ko active Application Filing
- 2015-02-09 TW TW104104252A patent/TWI671391B/zh active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108140569A (zh) * | 2015-09-30 | 2018-06-08 | 福吉米株式会社 | 研磨用组合物 |
US10414019B2 (en) | 2015-09-30 | 2019-09-17 | Fujimi Incorporated | Polishing composition |
TWI813623B (zh) * | 2018-03-02 | 2023-09-01 | 日商Agc股份有限公司 | 研磨劑、研磨方法、及研磨用添加液 |
TWI829675B (zh) * | 2018-03-30 | 2024-01-21 | 日商福吉米股份有限公司 | 研磨用組合物 |
TWI821407B (zh) * | 2018-09-28 | 2023-11-11 | 日商福吉米股份有限公司 | 研磨用組合物、研磨方法及基板之製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI671391B (zh) | 2019-09-11 |
KR20210154886A (ko) | 2021-12-21 |
WO2015146282A1 (ja) | 2015-10-01 |
KR102451385B1 (ko) | 2022-10-07 |
SG11201607553QA (en) | 2016-10-28 |
US10144907B2 (en) | 2018-12-04 |
US20170175053A1 (en) | 2017-06-22 |
CN106133104A (zh) | 2016-11-16 |
KR20160138049A (ko) | 2016-12-02 |
EP3124570A1 (en) | 2017-02-01 |
EP3124570A4 (en) | 2017-02-08 |
JP6343160B2 (ja) | 2018-06-13 |
EP3124570B1 (en) | 2020-09-09 |
KR20210154887A (ko) | 2021-12-21 |
JP2015189899A (ja) | 2015-11-02 |
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