TW201532175A - 基板處理裝置 - Google Patents
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Abstract
本發明揭示一種基板處理裝置。該裝置包含:一腔室,該腔室提供一內部空間,其中執行關於該基板的處理;一承座,其位於該內部空間內並且其上放置該基板;一固定板,其位於沿著該承座四周放置在該腔室側壁內的一排放口之內,該固定板具有複數個貫穿孔;以及至少一滑動板,其位於該固定板的上半部或下半部上,相對於該承座的中央旋轉,該至少一滑動板選擇性開啟與關閉該等貫穿孔。
Description
本發明係關於基板處理裝置,尤其係關於用來處理一基板的裝置,其可調整一流動通道,氣體透過此通道供應進入一腔室內部空間,然後使用一排氣口上的一固定板與一滑動板排出氣體。
一半導體設備包含矽基板上複數個層,該等層透過沉積處理沉積於該基板上。該沉積處理具有許多對於評估該等已沉積層以及選擇一沉積方法來說相當重要的重大問題。
第一個重大問題的範例就是每一沉積層的「品質」。「品質」代表成份、污染程度、缺陷密度以及機械和電氣屬性。該已沉積層的成份可根據沉積條件而改變,這對於獲得一指定成份來說非常重要。
第二個重大問題就是該晶圓之上的一致厚度。尤其是,沉積在具有非平面形狀(其中形成階梯部分)的圖案上一層之厚度非常重要。在此該已沉積膜的厚度是否一致可透過階梯涵蓋率來決定,該涵蓋率定義為該階梯部分上所沉積該膜的最小厚度除以該圖案上所沉積該膜的厚度之比例。
有關沉積的其他問題為一填充空間。這代表一個間隙填充,其中包含氧化物層的絕緣層填入金屬線之間。一間隙提供該等金屬線之間
的實體與電氣隔離。尤其是,有關沉積處理的一個重要議題就是均勻性,該沉積處理係在真空狀態下的處理室內執行。
一基板已經裝入該處理室內。一噴灑頭已經位於該基板之上。一處理氣體透過該噴灑頭供應至該基板上,並沉積在該基板上以形成一所要的薄膜。該沉積處理與一排氣處理一起執行。在該排氣處理中,在該沉積處理中產生的處理副產品以及未反應氣體都排放到外面。
專利說明書1:第10-2006-0093611號韓國專利申請案(2006年8月25日)
本發明提供一種基板處理裝置,其透過均勻排氣確保沉積在一基板上的一薄膜之均勻性。
參閱下列詳細說明以及附圖將可了解本發明的其他目的。
本發明的具體實施例提供基板處理裝置,該裝置包含:一腔室,該腔室提供一內部空間,其中執行關於該基板的處理;一承座,其位於該內部空間內並且其上放置該基板;一固定板,其位於沿著該承座四周放置在該腔室側壁內的一排放口之內,該固定板具有複數個貫穿孔;以及至少一滑動板,其位於該固定板的上半部或下半部上,相對於該承座的中央旋轉,該至少一滑動板選擇性開啟與關閉該等貫穿孔。
在某些具體實施例內,該裝置可另包含一排氣板,其沿著該承座的四周放置在該承座與該排氣口之間定義的一排放孔上,該排氣板具有定義在其內表面內的複數個上與下排氣孔。
在其他具體實施例內,該固定板與該滑動板每一者的上端可位於該等上排氣孔之下。
仍舊在其他具體實施例內,該固定板可具有一環形,並且該滑動板可具有彼此相隔的複數個弧形。
甚至在其他具體實施例內,該滑動板可另包含:一上方板,其位於該固定板上並且有一排放孔貫穿其上;以及一側板,其連接至該上方板的外圓周表面,以便沿著該腔室的該側壁移動,該側板具有一磁性本體。
尚且在其他具體實施例內,該裝置可另包含:一外殼,其與該腔室的一外壁相隔,提供與該外界分隔的一輸送通道;一阻擋板,其位於該外殼內,將該輸送通道分割成複數個輸送區段;一磁鐵,其位於每一該等輸送區段內,對該側板施加磁力,藉此與該側板一起移動;一彈性構件,其位於該阻擋板與該磁鐵之間,提供朝向該磁鐵的彈力;以及液壓線路,每一液壓線路都位於該輸送區段內來提供一流體壓力,如此該磁鐵可朝向該阻擋板移動。
在進一步具體實施力內,該滑動板可在該貫穿孔與彼此相對應的該排放孔連通之一開放位置與關閉該貫穿孔的一阻擋位置之間切換。
仍舊在進一步具體實施例內,該裝置可另包含:一流率調整器,其位於該液壓線路內,來調整該液壓線路的流率;以及一控制器,其連接至該流率調整器來控制該流率調整器。
甚至在進一步具體實施例內,該腔室可包含:一主體;以及一腔室蓋,其位於該腔室本體上,以關閉該腔室本體的一上半部,其中該基板處理裝置可另包含一供應口,其位於該腔室蓋內來朝向該內部空間供應一氣體。
3‧‧‧內部空間
5‧‧‧通道
10‧‧‧腔室本體
12‧‧‧緩衝空間
15‧‧‧排氣口
16‧‧‧排放孔
17‧‧‧排氣管線
18‧‧‧排氣閥
20‧‧‧腔室蓋
25‧‧‧供應口
30‧‧‧噴灑頭
32‧‧‧注射孔
35‧‧‧緩衝板
37‧‧‧注射孔
40‧‧‧承座
45‧‧‧支撐轉軸
50‧‧‧排氣板
52‧‧‧上排氣孔
54‧‧‧下排氣孔
60‧‧‧第一外殼
61‧‧‧第一輸送通道
62A-62H‧‧‧液壓管線
63A-63H‧‧‧阻擋板
65‧‧‧磁鐵
65A-65H‧‧‧磁鐵
67‧‧‧彈性構件
67A-67H‧‧‧彈性構件
70‧‧‧第二外殼
71‧‧‧第二輸送通道
80‧‧‧固定板
85‧‧‧貫穿孔
90‧‧‧滑動板
91‧‧‧上方板
92‧‧‧側板
94‧‧‧磁性本體
95‧‧‧排放孔
100‧‧‧基板處理裝置
110‧‧‧控制器
120‧‧‧流率調整器
120A-120H‧‧‧流率調整器
130A-130H‧‧‧驅動馬達
A-H‧‧‧輸送區段
W‧‧‧基板
在此包含附圖來進一步了解本發明,並且併入以及構成此說明書的一部分。圖式例示本發明的示範具體實施例,並且在搭配內容說明之後可用來解釋本發明原理。圖式中:第一圖和第二圖為根據一個具體實施例的一基板處理裝置之圖解圖;第三圖為第一圖中A的放大圖;第四圖為第一圖中一固定板與一滑動板的放大圖;第五圖和第六圖為例示第二圖中該滑動板的待命位置之圖式;第七圖和第八圖為例示第二圖中該滑動板的操作位置之圖式;以及第九圖為第二圖中該基板處理裝置的修改範例。
此後,將參照第一圖至第九圖來詳細說明本發明的範例具體實施例。不過,本發明可以有不同形式的修改,並且不受限於此處公佈的具體實施例。而是提供這些具體實施例,如此所揭示範圍更完整,並且將本發明範疇完整傳輸給精通此技術的人士。在圖式中,為了清晰起見所以誇大了組件的形狀。
雖然底下示範一沉積裝置,不過本發明可適用於包含基板支撐單元的許多基板處理裝置。另外,雖然底下解釋一晶圓W,不過本發明可適用於許多待處理的物體。
第一圖和第二圖為根據一個具體實施例的一基板處理裝置之圖解圖,第三圖為第一圖中A的放大圖,並且第四圖為第一圖中一固定板與一滑動板的放大圖。如第一圖至第四圖內所例示,基板處理裝置100包含一腔室本體10以及一腔室蓋20。腔室本體10具有一打開的上邊。腔室蓋20打開或關閉該腔室本體10中該打開的上邊。腔體蓋20關閉腔室本體10中該打開的上邊時,腔室本體10與腔室蓋20定義出與外面隔離的一內部空間。另外,如第二圖內所示,內部空間3具有一圓形剖面。腔室本體10可具有從兩側表面凹陷的一凹陷部分,並且具有與內部空間3相同的中央。該凹陷部分可具有一圓弧表面形狀。該凹陷部分上有稍後將說明的第一和第二外殼60和70。
一基板W透過腔室本體10一邊內定義的一通道5,載入內部空間3之內。一承座40位於內部空間3之內。該載入的基板W位於承座40的一頂端表面上。一支撐轉軸45連接至承座40的下半部。支撐轉軸45支撐承座40,並且在執行處理時旋轉承座40。另外,一升降單元(未顯示)連接至支撐轉軸45的下半部,因此支撐轉軸45可升降。
噴灑頭30大體上具有一平板形,並且位於腔室本體10與腔室蓋20之間。如此,會由噴灑頭30與腔室蓋20蓋住腔室本體10打開的上邊。另外,噴灑頭30可透過個別接合構件,固定至腔室蓋20的底部表面。這樣會由腔室蓋20蓋住腔室本體10打開的上邊。
一供應口25可位於腔室蓋20之內。一處理氣體通過供應口25供應進入內部空間3。噴灑頭30具有一凹陷的頂端表面,該凹陷頂端表面與腔室蓋20的底部表面分隔,以便定義一緩衝空間12。該處理氣體已經透過
供應口25填充入緩衝空間12,並且透過噴灑頭30供應到內部空間3之內。
另外,一緩衝板35可位於緩衝空間12之內,以便重新擴散該處理氣體,藉此將均勻的處理氣體供應至該基板W上。每一該噴灑頭與該緩衝板都具有複數個注射孔32和37,該處理氣體通過每一注射孔32和37,並朝向該基板W注射。該處理氣體移動至該基板W的表面上,透過承座40內的一加熱器在該基板W的表面上分解,藉此形成一薄膜。根據薄膜種類可選擇該處理氣體。
排氣口15沿著腔室本體10的側壁放置。排氣板50位於承座40的四周上,以及承座40與排氣口15之間定義的一排放孔16上。另外,在排氣板50內可定義上與下排氣孔52和54。處理中相對於該基板W所產生的反應副產品以及未反應氣體可通過排氣板50的上與下排氣孔52和54,排放至排氣口15。一排氣管線17可連接至排氣口15。排氣閥18位於排氣管線17內,以便開啟與關閉排氣管線17。另外,一排氣泵18可位於排氣管線17上,強迫通過排氣管線17將該未反應氣體與該等反應副產物排至外界。
固定板80具有環形,並且沿著排氣口15放置。固定板80具有複數個貫穿孔85。貫穿孔85彼此相隔一預定間距。滑動板90與固定板80的上半部(或下半部)接觸。在滑動板90內定義具有尺寸對應至該固定板中貫穿孔85的尺寸之一排放孔95。滑動板90可有多個,複數個滑動板90可彼此相隔。滑動板90可具有圓弧形,具備與固定板80相同的圓弧半徑。
滑動板90可包含其中定義排放孔95的一上方板91,以及大體上垂直連接至上方板91的外周邊表面之一側板92。側板92位於腔室本體10的該凹陷部分內,與腔室本體10內壁接觸以移動。一磁性本體94可位於側
板92的內表面上。第一和第二外殼60和70可位於腔室本體10的凹陷外壁之兩側,第一和第二外殼60和70可沿著位於腔室本體10內側板92之外側平行放置。
第一和第二外殼60和70沿著腔室本體10的外壁放置,提供與外界相隔的第一和第二輸送通道61和71。複數個阻擋板63A、63B、63C、...和63H都位於第一和第二輸送通道61和71內,將第一和第二輸送通道61和71分割成複數個輸送區段A、B、C、...和H。該等輸送區段A、B、C、...和H可與外界相隔,避免輸送區段A、B、C、...和H內產生的粒子洩漏到外界。
磁鐵65A、65B、65C、...和65H可分別位於輸送區段A、B、C、...和H之內,每一磁鐵65A、65B、65C、...和65H都可對側壁92上的磁性本體94施加磁力,相對於每一磁鐵65A、65B、65C、...和65H來移動滑動板90。另外,彈性構件67A、67B、67C、...和67H分別位於磁鐵65A、65B、65C、...和65H與阻擋板63A、63B、63C、...和63H之間,每一彈性構件67A、67B、67C、...和67H都可提供朝向磁鐵65A、65B、65C、...和65H的彈力。每一都提供流體壓力(或氣動壓力)的液壓管線62A、62B、62C、...和62H可連接至每一輸送區段A、B、C、...和H,如此每一磁鐵65A、65B、65C、...和65H都朝向每一阻擋板63A、63B、63C、...和63H移動。
另外,在每一液壓管線62A、62B、62C、...和62H內可有一流率調整器120(例如一閥門或一質流控制器(MFC,mass flow controller)),用於調整每一液壓管線62A、62B、62C、...和62H的流率。一控制器110連接至每一流率調整器120A、120B、120C、...和120H。控制器110可控制預定流率調整器120A、120B、120C、...和120H來移動每一磁鐵65A、65B、
65C、...和65H並旋轉滑動板90,藉此透過排氣口15將該等反應副產品以及該未反應氣體排至外界。
第五圖至第八圖為例示第二圖中該滑動板的一操作處理之圖式。第五圖和第六圖為例示第二圖中該滑動板的待命位置之圖式,並且第七圖和第八圖為例示第二圖中該滑動板的操作位置之圖式。如上述,滑動板90可位於固定板80上,相對於承座40的中央旋轉。固定板80內定義複數個貫穿孔85,貫穿孔85定義成彼此相隔一預定間距,例如:每一貫穿孔85都可定義在相對於固定板80中央大約11.25°的角度上。
如第五圖和第六圖所例示,滑動板90可具有弧形,每一滑動板90都可具有相對於固定板80中央大約33.75°的中央角度。貫穿孔95可定義在滑動板90的中央部分內,貫穿孔85可與在滑動板90的待命位置上之排放孔95連通,以將該等反應副產品與該未反應氣體排至排氣口15。
第一和第二外殼60和70可位於腔室本體10的兩凹陷側上,每一第一和第二外殼60和70具有沿著腔室本體10的該凹陷部分連接並與外面隔離之每一第一和第二輸送通道61和71。第一和第二外殼60和70的形狀可彼此相對於腔室本體10中央對稱。用於將第一和第二輸送通道61和71分割成複數個輸送區段A、B、C、...和H的阻擋板63A、63B、63C、...和63H都位於第一和第二外殼60和70內。
第一至第四阻擋板63A、63B、63C和63D可依逆時鐘方向位於第一外殼60內。第一外殼60的該輸送區段可用第一至第四阻擋板63A、63B、63C和63D分割成第一至第四輸送通道A、B、C和D。第一磁鐵65A可位於第一輸送通道A上,第一磁鐵65A可利用位於滑動板90下半部上的磁性
本體94之吸引力來移動,因此對應至第一磁鐵65A的滑動板90可與第一磁鐵65A一起移動,磁鐵65位於每一輸送通道A至H上,每一磁鐵65A、65B、65C、...和65H都相對於位於滑動板90上的磁性本體94而放置。彈性構件67A、67B、67C、...和67H分別位於磁鐵65A、65B、65C、...和65H與阻擋板63A、63B、63C、...和63H之間,彈性構件67可提供朝向磁鐵65的彈力。
該液壓管線(或氣動管線)都連接至每一輸送通道A至H,該流體壓力可透過該液壓管線提供給磁鐵65,來移動磁鐵65。而用於調整該流率(或流體壓力)的流率調整器120可位於每一該等液壓管線(或氣動管線)之內。在此,控制器110可連接至流率調整器120來調整流率調整器120,藉此控制磁鐵65的動作。
如第七圖和第八圖內所例示,當磁鐵65移動時,對應至磁鐵65的滑動板90可隨磁鐵65一起移動,來開啟與關閉固定板80的貫穿孔85。即,氣動壓力可透過控制器110施加於預定要移動磁鐵65的至少該等輸送通道A、B、C、...和H至少一者。如此,對應至磁鐵65的滑動板90可與磁鐵65一起移動。因此,滑動板90可在該待命位置與該處理位置之間切換,來控制該等未反應氣體與該等反應副產品的排放流率。
詳細來說,透過噴灑頭30注入的該處理氣體會供應至該基板W的上半部。在該基板W受到承座40加熱的狀態下,該處理氣體與該基板W的表面反應以形成該薄膜。在此該薄膜的厚度與處理氣體供應量成比例。亦即,只要供應少量處理氣體,就可在該基板W的一部分表面上形成厚度相對薄之薄膜。同樣地,只要供應大量處理氣體,就可在該基板W的一部
分表面上形成厚度相對厚之薄膜。因此,當該處理氣體均勻供應至該基板W的完整表面上時,則該薄膜具有均勻的厚度。
不過,該薄膜的厚度會與承座40的加熱溫度加上該處理氣體供應量成比例。如此,在具有低加熱溫度的該基板W一部分表面上所形成之該薄膜具有薄的厚度,並且在具有高加熱溫度的該基板W一部分表面上所形成之該薄膜具有厚的厚度。如此,當承座40的加熱溫度一致時,該薄膜具有一致的厚度。因此,具有完全一致加熱溫度的承座40是理想的。
不過實際上,不可能製造出具有完美一致加熱溫度的承座40。尤其是近年來,該基板W尺寸增加而增加承座40的尺寸。如此,會難以在該基板W上實現均勻的溫度分佈。也就是,雖然該基板已經加熱至一處理溫度,不過該加熱器可能損壞或效能降低,並且該加熱器也可能發出局部不均勻的輻射熱。
此外,有許多因素影響該薄膜的厚度,因此必須人為調整一部分上述因素,如此形成具有一致厚度的薄膜。如此在本發明的當前具體實施例內,處理氣體供應量可根據該基板W的部分,人為不均勻調整,以便在該基板W整個表面上形成具有均勻厚度的薄膜。另外,因為處理氣體供應量與透過排氣口15排出的氣體流率成比例,所以可根據該基板W的部分人為不均勻調整排氣量。
例如:使用假基板W形成一薄膜,然後測量該薄膜的厚度。在此如第六圖所例示,整個貫穿孔85都與排氣孔95連通,將處理氣體均勻供應至該基板W的整個表面區域上。在此排氣孔95可另外定義成選擇性關閉貫穿孔85,如此可調整供應至該基板W每一表面的處理氣體供應量。
如此,當該薄膜的厚度大於該基板W表面特定區域上之參考值時,則可關閉與所對應區域外面相鄰定義的貫穿孔85,來降低處理氣體量。當用於調整處理氣體量的處理執行數次時,則可形成具有一致厚度的該薄膜。如此,可使用其上已經形成均勻厚度薄膜的該基板W來執行後續處理。
第九圖為第二圖中該基板處理裝置的修改範例。如第九圖內所例示,該液壓方法可由使用驅動馬達130A、130B、130C、...和130H的驅動方法來取代。亦即,每一磁鐵65A、65B、65C、...和65H都由對應的驅動馬達130A、130B、130C、...和130H來移動。每一驅動馬達130A、130B、130C、...和130H的力量都可透過齒輪傳輸至每一磁鐵65A、65B、65C、...和65H。再者,控制器110可單獨控制驅動馬達130A、130B、130C、...和130H。
根據本發明的具體實施例,透過該排氣口上沿著該腔室內壁放置的該固定板與該滑動板,可控制供應進入該腔室內部空間的該處理氣體排放流率。同樣地,控制供應至該基板上的該處理氣體流來形成均勻的薄膜,藉此改善該基板的生產力與品質。
雖然本發明以參考範例具體實施例來詳細說明,不過本發明可在不同的形式內具體實施。如此,底下所公佈的技術理念與申請專利範圍的範疇都不受限於該等較佳具體實施例。
40‧‧‧承座
50‧‧‧排氣板
60‧‧‧第一外殼
61‧‧‧第一輸送通道
62A-62H‧‧‧液壓管線
63A-63H‧‧‧阻擋板
65A-65H‧‧‧磁鐵
67A-67H‧‧‧彈性構件
70‧‧‧第二外殼
71‧‧‧第二輸送通道
80‧‧‧固定板
85‧‧‧貫穿孔
90‧‧‧滑動板
95‧‧‧排放孔
100‧‧‧基板處理裝置
110‧‧‧控制器
120A-120H‧‧‧流率調整器
A-H‧‧‧輸送區段
W‧‧‧基板
Claims (9)
- 一種用於處理一基板之裝置,該裝置包含:一腔室,該腔室提供一內部空間,其中執行關於該基板的處理;一承座,其位於該內部空間內並且其上放置該基板;一固定板,其位於沿著該承座四周放置在該腔室側壁內的一排放口之內,該固定板具有複數個貫穿孔;以及至少一滑動板,其位於該固定板的上半部或下半部上,相對於該承座的中央旋轉,該至少一滑動板選擇性開啟與關閉該等貫穿孔。
- 如申請專利範圍第1項之裝置,另包含一排氣板,其沿著該承座的四周放置在該承座與該排氣口之間定義的一排放孔上,該排氣板具有定義在其內表面內的複數個上與下排氣孔。
- 如申請專利範圍第2項之裝置,其中該固定板與該滑動板每一者的上端位於該等上排氣孔之下。
- 如申請專利範圍第1項之裝置,其中該固定板具有一環形,以及該滑動板具有複數個彼此相隔的弧形。
- 如申請專利範圍第1項之裝置,其中該滑動板另包含:一上方板,其位於該固定板上並且有一排放孔貫穿其上;以及一側板,其連接至該上方板的外圓周表面,以便沿著該腔室的該側壁移動,該側板具有一磁性本體。
- 如申請專利範圍第5項之裝置,另包含:一外殼,其與該腔室的一外壁相隔,提供與該外界分隔的一輸送通道; 一阻擋板,其位於該外殼內,將該輸送通道分割成複數個輸送區段;一磁鐵,其位於每一該等輸送區段內,對該側板施加磁力,藉此與該側板一起移動;一彈性構件,其位於該阻擋板與該磁鐵之間,提供朝向該磁鐵的彈力;以及液壓線路,每一都位於該輸送區段內來提供一流體壓力,如此該磁鐵可朝向該阻擋板移動。
- 如申請專利範圍第6項之裝置,其中該滑動板在該貫穿孔與彼此相對應的該排放孔連通之一開放位置與關閉該貫穿孔的一阻擋位置之間切換。
- 如申請專利範圍第6項之裝置,另包含:一流率調整器,其位於該液壓線路內,來調整該液壓線路的流率;以及一控制器,其連接至該流率調整器來控制該流率調整器。
- 如申請專利範圍第1項之裝置,其中該腔室包含:一主體;以及一腔室蓋,其位於該腔室本體上,來關閉該腔室本體的上半部,其中該基板處理裝置另包含位於該腔室蓋內的一供應口,將一氣體供應至該內部空間。
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