CN105849865A - 基板处理装置 - Google Patents

基板处理装置 Download PDF

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CN105849865A
CN105849865A CN201480070511.9A CN201480070511A CN105849865A CN 105849865 A CN105849865 A CN 105849865A CN 201480070511 A CN201480070511 A CN 201480070511A CN 105849865 A CN105849865 A CN 105849865A
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诸成泰
李在镐
崔晌镐
尹胜铉
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Eugene Technology Co Ltd
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Abstract

根据本发明的一实施例,基板处理装置包括:腔,提供对基板实施工序的内部空间;基座,设置在上述内部空间,且在上部放置上述基板;固定板,设置在沿着上述基座的周边在上述腔的侧壁形成的排气口上,并具有多个贯通孔;及一个以上的滑动板,设置在上述固定板的上部或下部,能够以上述基座的中心为基准旋转,选择性地开闭上述多个贯通孔。

Description

基板处理装置
技术领域
本发明涉及基板处理装置,更详细地涉及可以利用设置于排气口上的固定板及滑动板来调节供给到腔的内部空间的气体排放的流动路径的基板处理装置。
背景技术
半导体装置在硅基板上具有很多层(layers),这样的层是通过蒸镀工序蒸镀在基板上。这样的蒸镀工序具有几个重要的问题,这样的问题对评价所蒸镀的膜并选择蒸镀方法来说很重要。
第一个是所蒸镀的膜的“质量”(quality)。这表示组成(composition)、污染度(contamination levels)、损失度(defect density)、及机械的、电的特性(mechanical and electrical properties)。膜的组成可以根据蒸镀条件变化,其为了得到特定的组成(specific composition)非常重要。
第二个是横贯晶片的均匀的厚度(uniform thickness)。特别是,在形成有台阶的非平面形状的图案上部蒸镀的膜的厚度非常重要。所蒸镀的膜的厚度是否均匀,可以通过以蒸镀在形成台阶的部分的最小厚度除以蒸镀在图案的上部表面的厚度的值定义的阶梯覆盖率(step coverage)来判断。
与蒸镀有关的另一问题是填充空间(filling space)。这包括用包含氧化膜的绝缘膜填充金属线之间的缝隙填充(gap filling)。缝隙是为了将金属线在物理上及电性绝缘而提供的。特别是,这些问题中均匀度是与蒸镀工序有关的重要的一个问题,蒸镀工序在形成真空气氛的工序腔内部进行。
基板被装载到工序腔内,喷头设置在基板的上部,通过喷头提供的工序气体蒸镀到基板上而形成期望的薄膜。另一方面,蒸镀工序与排气过程一起进行,在排气过程中通过蒸镀产生的工序副产物及未反应气体被排出到工序腔的外部。
发明内容
技术课题
本发明的目的在于,提供一种利用侧方排气方式的基板处理装置。
本发明的另一目的在于,提供一种能够通过均匀的排气来确保蒸镀于基板上的薄膜的均匀度的基板处理装置。
本发明的其它目的通过下面的详细说明和附图会更加清楚。
课题解决方案
根据本发明的一实施例,基板处理装置包括:腔,提供对基板实施工序的内部空间;基座,设置在上述内部空间,且在上部放置上述基板;固定板,设置在沿着上述基座的周边在上述腔的侧壁形成的排气口上,并具有多个贯通孔;及一个以上的滑动板,设置在上述固定板的上部或下部,能够以上述基座的中心为基准旋转,选择性地开闭上述多个贯通孔。
上述基板处理装置还可以包括排气板,该排气板设置在沿着上述基座的周边配置而在上述基座和上述排气口之间形成的排出口上,并具备在内表面分别形成的多个上部排气孔及下部排气孔。
上述固定板及上述滑动板的上端可以配置在上述上部排气孔的下部。
上述固定板可以具有圆环形状,上述滑动板以多个圆弧形状相互分开距离配置。
上述滑动板还可以具备:上部板,配置在上述固定板的上部,贯通形成有排出孔;及侧面板,沿着上述上部板的外周面连接而可沿着上述腔的侧壁移动,并具备磁体。
上述基板处理装置还可以包括:外壳:与上述腔的外壁分开距离设置,提供从外部遮断的运送路径;遮断板,设置在上述外壳内,将上述运送路径划分为多个运送区间;磁铁,分别设置在上述运送区间,向上述侧面板施加磁力而可以一起移动;弹性部件,分别设置在上述遮断板和上述磁铁之间,向上述磁铁提供弹力;液压线路,分别设置在上述运送区间,提供液压而使上述磁铁可以向上述遮断板移动。
上述滑动板通过上述磁铁,可向上述贯通孔和上述排出孔在相互对应的位置连通的开放位置及封闭上述贯通孔的遮断位置转换。
上述基板处理装置还可以包括:流量调节器,分别设置在上述液压线路上,用于调节上述液压线路的流量;及控制器,分别与上述流量调节器连接来控制上述流量调节器。
上述腔可以包括:腔本体,上部开放,且提供对基板实施工序的内部空间;及腔盖,设置在上述腔本体的上部而封闭上述腔本体的上部;上述基板处理装置具有形成于上述腔盖上而向上述内部空间供给气体的供给口。
发明效果
根据本发明的一实施例,可以通过沿着腔的内壁形成的排气口上设置的固定板及滑动板,控制被供给到腔内部空间的工序气体的排气流动。另外,通过可以控制供给到基板上的工序气体的流动过程,从而形成均匀的薄膜来提高基板的生产性及质量。
附图说明
图1及图2是简要地表示根据本发明的一实施例的基板处理装置的图。
图3是放大图1所示的A的图。
图4是放大图1所示的固定板及滑动板的图。
图5及图6是表示图2所示的滑动板的待机位置的图。
图7及图8是表示图2所示的滑动板的工作位置的图。
图9是图2所示的基板处理装置的变形例。
具体实施方式
下面,参照图1至图9更详细地说明本发明的优选实施例。本发明的实施例可以变形成多种方式,本发明的范围不可解释为由下面说明的实施例限定。本实施例是为了对本发明所属技术领域的普通技术人员更详细地说明本发明而提供的。因此,为了更清楚的说明,附图中出现的各要素的形状可能被夸张。
另外,下面以蒸镀装置为例进行说明,但是本发明可以应用于具备基板支承模块的多种基板处理装置。另外,下面以晶片W为例进行说明,但是本发明可以应用于多种被处理体。
图1及图2是简要地表示根据本发明的一实施例的基板处理装置的图。另外,图3是放大图1所示的A的图,图4是放大图1所示的固定板和滑动板的图。如图1至图4所示,基板处理装置100包括腔本体10及腔盖20。腔本体10是上部开放的形状,腔盖20可以开闭腔本体10的开放的上部。当腔盖20封闭腔本体10的开放的上部时,腔本体10及腔盖20形成从外部封闭的内部空间3。另外,如图2所示,内部空间3的截面可以是圆形,腔本体10从两侧面凹陷而具备与内部空间3具有相同的中心的曲面形状的凹陷部。后述的第1及第2外壳60、70设置在凹陷部上。
基板W通过形成于腔本体10的一侧的通道5装载到内部空间3,基座40设置在内部空间3。装载的基板W放置在基座40的上部表面,基座40的下部连接支承轴45。支承轴45支承基座40,在实施工序时可以旋转基座40。另外,支承轴45与连接在下部的升降机构(未图示)连接而可升降。
喷头30大体为平板形状,设置在腔本体10和腔盖20之间。因此,腔本体10的开放的上部由喷头30及腔盖20封闭。相反,喷头30可以通过单独的连接部件固定在腔盖20的下部表面,腔本体10的开放的上部可以由腔盖20封闭。
供给口25可以形成在腔盖20,工序气体通过供给口25供给到内部空间3。喷头30具有凹的上部表面,凹的上部表面与腔盖20的下部表面分开距离而形成缓冲空间12。工序气体通过供给口25填充到缓冲空间12内,并通过喷头30供给到内部空间3。
另外,在缓冲空间12可以设置缓冲板35,缓冲板35将通过供给口25供给的工序气体1次性扩散之后,通过喷头30再扩散,从而可以将均匀的工序气体供给到基板W上。喷头及缓冲板分别具有多个喷射孔32、37,工序气体通过各个喷射孔32、37而向基板W喷射。工序气体向基板W的表面移动,从基板W的表面通过设置于基板40内部的加热器分解之后形成薄膜,可以根据薄膜的种类选择工序气体。
排气口15沿着腔本体10的侧壁形成。排气板50设置在配置于基座40的周边并在基座40和排气口15之间形成的排出口16上。另外,在排气板50上形成贯通排气板50的上部及下部排气孔52、54,对基板W实施工序时产生的反应副产物及未反应气体可以通过排气板50的上部排气孔52及下部排气孔54而从排气口15排出。
排气口15可以与排气线路17连接,排气阀18设置在排气线路17上来开闭排气线路17。另外,排气泵19设置在排气线路17上,可以通过排气线路17向外部强制排出反应副产物及未反应气体。
固定板80具有圆环形状,沿着排气口15设置。固定板80具有多个贯通孔85,贯通孔85以预定的间隔分开距离形成。滑动板90与固定板80的上部(或下部)抵接配置,滑动板90上也形成与固定板80的贯通孔85对应大小的排出孔95。滑动板90可以相互分开距离而配置多个,可以是具有与固定板80相同的曲率半径的圆弧形状。
滑动板90可以包括设有排出孔95的上部板91及沿着上部板91的外周面大致垂直地竖立连接的侧面板92。侧面板92位于腔本体10的凹陷部且可与腔本体10的内壁抵接移动,在内表面具备磁体94。沿着腔本体10的凹陷的外壁,在两侧分别设有第1及第2外壳60、70;第1及第2外壳60、70可以沿着设置于腔本体10内部的侧面板91的外侧相互并列配置。
第1及第2外壳60、70沿着腔本体10的外壁设置,提供从外部遮断的第1及第2运送路径61、71。在第1及第2运送路径61、71上具备多个遮断板63A、63B、63C…63H,遮断板63A、63B、63C…63H将第1及第2运送路径61、71划分为多个运送区间A、B、C…H。运送区间A、B、C…H从外部遮断,从而可以防止在运送区间A、B、C…H内产生的微粒向外部泄漏。
在各运送曲间A、B、C…H内设有磁铁65A、65B、65C…65H,各磁铁65A、65B、65C…65H可以向设置于侧面板91的磁体94施加磁力而使与各磁铁65A、65B、65C…65H对应的滑动板90移动。另外,在磁铁65A、65B、65C…65H和遮断板63A、63B、63C…63H之间分别设有弹性部件67A、67B、67C…67H,弹性部件67A、67B、67C…67H朝向磁铁65A、65B、65C…65H提供弹力。在各运送区间A、B、C…H可以连接有提供液压(或空压)的液压线路62A、62B、62C…62H(或空压线路),使得磁铁65A、65B、65C…65H可以朝向上述遮断板63A、63B、63C…63H移动。
另外,在液压线路62A、62B、62C…62H上分别设有调节液压线路62A、62B、62C…62H的流量的流量调节器120(例如,阀门或MFC(mass flowcontroller,质量流量控制器),控制器110分别与各流量调节器120A、120B、120C…120H连接。控制器110控制预定的流量调节器120A、120B、120C…120H而使磁铁65A、65B、65C…65H移动,从而旋转滑动板90而通过排气口15向外部排出反应副产物及未反应气体。
图5至图8是表示图2所示的滑动板的工作过程的图。图5及图6是表示滑动板的待机位置的图,图7及图8是表示滑动板转换到工作位置的状态的图。如上所述,在固定板80的上部配置滑动板90,能够以基座40的中心为基准旋转。固定板80上形成多个贯通孔85。贯通孔85分别以预定的间隔配置,例如各贯通孔85可以从固定板80的中心以11.25度的间隔形成。
如图5及图6所示,滑动板90为圆弧形状,各滑动板90可以具有与固定板80的中心呈33.75度的中心角。在滑动板90的中央部形成排出孔95,在滑动板90的待机位置贯通孔85和排出孔95分别连通,从而反应副产物及未反应气体可以向排气口15排出。
在腔本体10的凹陷的两侧部分别设有第1及第2外壳60、70,第1及第2外壳60、70沿腔本体10的凹陷部连接,具有分别从外部封闭的第1及第2运送路径61、71。第1及第2外壳60、70具有从腔本体10的中央相互对称的形状,在第1及第2外壳60、70内分别设置将第1及第2运送路径61、71划分为多个运送区间A、B、C…H的遮断板63A、63B、63C…63H。
在第1外壳60内可以沿逆时针方向分别设置第1至第4遮断板63A、63B、63C、63D,第1外壳60的运送区间可以通过第1至第4遮断板63A、63B、63C、63D划分为第1至第4运送路径A、B、C、D。在第1运送路径A具备第1磁铁65A,第1磁铁65A通过与设置于一个滑动板90的下部的磁体94之间的引力,随着第1磁铁65A移动,与第1磁铁对应的滑动板90也可以一起移动。
在各运送路径A至H设有磁铁65,各磁铁65A、65B、65C…65H配置成与各滑动板90上具备的磁体94对应。在遮断板63A、63B、63C…63H和磁铁65A、65B、65C…65H之间分别设置弹性部件67A、67B、67C…67H,弹性部件67向磁铁65提供弹力。
在各运送路径A至H连接有液压线路(或空压线路),通过液压线路向磁铁65提供液压,从而磁铁65可以移动。在各液压线路(或空压线路)上可以设置调节流量(或液压)的流量调节器120,控制器110与各流量调节器120连接来调节流量调节器120,从而可以控制磁铁65的移动。
如图7及图8所示,随着磁铁65移动,与磁铁65对应的滑动板90一起移动,从而可以开闭固定板80的贯通孔85。即,通过控制器110向预定的运送路径A、B、C…H中的某一个以上施加空压而使磁铁65移动,从而与磁铁65对应的滑动板90可以一起移动。因此,滑动板90从待机位置向工序位置转换,从而可以控制未反应气体及反应副产物的排气流程。
若具体地说明,通过喷头30喷射的工序气体被供给到基板W的上部,在基板W由基座40加热的状态下,工序气体与基板W的表面反应而形成薄膜。这时薄膜的厚度与工序气体的供给量成正比,基板W的表面中被供给少量工序气体的部分的薄膜的厚度小,被供给大量工序气体的部分的薄膜厚度大。因此,工序气体向基板W的整体表面均匀供给的情况下,薄膜可以具有均匀的厚度。
但是,薄膜的厚度除工序气体的供给量之外还与基座40的加热温度成正比,基板W的表面中加热温度低的部分的薄膜厚度小,加热温度高的部分的薄膜厚度大。因此,基座40的加热温度均匀的情况下薄膜可以具有均匀的厚度,具有整体上均匀的加热温度的基座40较理想。
但是,现实中加工具有完全均匀的加热温度的基座40是不太可能的。特别是,最近随着基板W的尺寸大型化,基座40的尺寸也是一起增加的趋势,由此,在基板W上形成均匀的温度分布产生困难。即,在将基板W加热到工序温度的过程中,有可能加热器固障或性能下降,此外,加热器的辐射热局部地变得不均匀。
除此之外,对薄膜的厚度造成影响的因素(factor)多样,为了形成具有均匀厚度的薄膜,有必要人为地调整前面所述的因素中的一部分。因此,在本发明的实施例中,欲根据基板W的部分人为地不均匀地调整工序气体的供给量来在基板W的整个表面形成具有均匀厚度的薄膜,并且,由于工序气体的供给量与通过排气口15排出的气体的流量成正比,因此欲根据基板W的部分人为地将气体的排出量调整为不均匀。
例如,利用样本(dummy)基板W形成薄膜之后,测量薄膜的厚度。这时,如图6所示,使所有贯通孔85和排出孔95连通,向基板W表面的各区域供给相对于面积相同量的工序气体。然后,如图8所示,与所测定的薄膜厚度成比例地错开配置贯通孔85和排出孔95,从而可以选择性地封闭贯通孔85。因此,可以调节向基板W表面的各区域供给的工序气体的供给量。
即,在基板W表面的特定区域薄膜厚度比基准值厚时,可以封闭与该区域的外侧邻接的贯通孔85来减少工序气体的量。通过这样的方法,经过几次调整过程就可以形成具有均匀厚度的薄膜,可以利用形成有均匀厚度薄膜的基板W执行接下来的工序。
通过优选实施例详细地说明了本发明,但是也可以是与此不同方式的实施例。因此,下面记载的权利要求的技术思想和范围不限于优选实施例。
用于实施发明的方式
图9是图2所示的基板处理装置的变形例。如图9所示,液压方式可以代替为基于驱动电机130A、130B、130C…130H的驱动方式。即,各磁铁65A、65B、65C…65H可以通过分别对应的驱动电机130A、130B、130C…130H移动,驱动电机130A、130B、130C…130H的动力可以通过齿轮等传递到磁铁65A、65B、65C…65H。另外,各驱动电机130A、130B、130C…130H可以通过控制器110单独控制。
工业实用性
本发明可以应用于多种方式的半导体制造设备及制造方法。

Claims (9)

1.一种基板处理装置,其特征在于,包括:
腔,提供对基板实施工序的内部空间;
基座,设置在上述内部空间,且在上部放置上述基板;
固定板,设置在沿着上述基座的周边在上述腔的侧壁形成的排气口上,并具有多个贯通孔;及
一个以上的滑动板,设置在上述固定板的上部或下部,能够以上述基座的中心为基准旋转,选择性地开闭上述多个贯通孔。
2.如权利要求1所述的基板处理装置,其特征在于,
上述基板处理装置还包括排气板,该排气板设置在沿着上述基座的周边配置而在上述基座和上述排气口之间形成的排出口上,并具备在内表面分别形成的多个上部排气孔及多个下部排气孔。
3.如权利要求2所述的基板处理装置,其特征在于,
上述固定板及上述滑动板的上端配置在上述上部排气孔的下部。
4.如权利要求1所述的基板处理装置,其特征在于,
上述固定板具有圆环形状,
上述滑动板以多个圆弧形状相互分开距离配置。
5.如权利要求1所述的基板处理装置,其特征在于,
上述滑动板还具备:
上部板,配置在上述固定板的上部,贯通形成有排出孔;及
侧面板,沿着上述上部板的外周面连接而能够沿着上述腔的侧壁移动,并具备磁体。
6.如权利要求5所述的基板处理装置,其特征在于,
上述基板处理装置还包括:
外壳:与上述腔的外壁分开距离设置,提供从外部遮断的运送路径;
遮断板,设置在上述外壳内,将上述运送路径划分为多个运送区间;
磁铁,分别设置在上述运送区间,向上述侧面板施加磁力而可以一起移动;
弹性部件,分别设置在上述遮断板和上述磁铁之间,向上述磁铁提供弹力;以及
液压线路,分别设置在上述运送区间,提供液压而使上述磁铁可向上述遮断板移动。
7.如权利要求6所述的基板处理装置,其特征在于,
上述滑动板通过上述磁铁,可向上述贯通孔和上述排出孔在相互对应的位置连通的开放位置及封闭上述贯通孔的遮断位置转换。
8.如权利要求6所述的基板处理装置,其特征在于,
上述基板处理装置还包括:流量调节器,分别设置在上述液压线路上,用于调节上述液压线路的流量;及控制器,分别与上述流量调节器连接来控制上述流量调节器。
9.如权利要求1所述的基板处理装置,其特征在于,
上述腔包括:腔本体,上部开放,且提供对基板实施工序的内部空间;及腔盖,设置在上述腔本体的上部而封闭上述腔本体的上部;
上述基板处理装置具有形成于上述腔盖上而向上述内部空间供给气体的供给口。
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