TW201528450A - 半導體裝置及半導體裝置之製造方法 - Google Patents

半導體裝置及半導體裝置之製造方法 Download PDF

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TW201528450A
TW201528450A TW103141562A TW103141562A TW201528450A TW 201528450 A TW201528450 A TW 201528450A TW 103141562 A TW103141562 A TW 103141562A TW 103141562 A TW103141562 A TW 103141562A TW 201528450 A TW201528450 A TW 201528450A
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semiconductor wafer
semiconductor device
lead
connection terminal
lead wire
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TWI631673B (zh
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Naoki Fukue
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Aoi Electronics Co Ltd
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Abstract

半導體裝置具備：連接端子；半導體晶片，其於一面具有電極墊；引線，其將連接端子與半導體晶片的電極墊予以連接；以及透明樹脂，其覆蓋半導體晶片的一面，且將連接端子與引線密封；引線具備：第1接合部，其接合於電極墊；第2接合部，其接合於連接端子；以及環圈部，其與第1接合部相連而形成，且於第2接合部的相反側具有折回部；在環圈部與第1接合部之間、及環圈部與引線的其他部分之間，分別設置有既定間隔。

Description

半導體裝置及半導體裝置之製造方法
本發明係關於一種半導體裝置及半導體裝置之製造方法，更詳細而言，本發明係關於如下半導體裝置及半導體裝置之製造方法，該半導體裝置的半導體晶片與連接端子由引線連接，且由透明樹脂密封。
例如，於在主面形成有受光元件等之半導體裝置中，藉由引線接合將形成於受光元件周圍之電極墊電性連接於設於電路基板之連接端子，且藉由透明樹脂將引線及半導體晶片密封。對於將半導體晶片與連接端子引線接合之半導體裝置，已知如下技術：為了降低半導體裝置之外形(profile)，將引線的一端球焊(ball bonding)於半導體晶片的電極墊，與該接合部相連地形成環圈部，該環圈部向與連接端子接合之接合部相反的方向延伸。
亦即，前述環圈部在與連接端子接合之接合部的相反方向具有折回部，該環圈部以受到藉由接合形成之球部按壓而於上部中央部形成凹部之方式被破壞，且環圈部的中央部下表面與形成於球部上之環圈部的其他部分接觸(例如參照專利文獻1，參照圖5)。
先前技術文獻
專利文獻
專利文獻1：日本特表2008-529278號公報
根據專利文獻1中所記載之方法，能夠降低半導體裝置之外形。然而，對於藉由樹脂將半導體晶片密封之半導體裝置而言，有可能因半導體晶片、支持半導體晶片之基板及密封樹脂之熱膨脹係數之差，對引線施加由熱應力引起之應力，導致引線斷裂。尤其對於具有受光元件等之半導體裝置而言，由於存在確保透明密封樹脂之透光性之必要性，故而無法為了接近於半導體晶片之線膨脹係數而將二氧化矽等之類的熱膨脹係數小之填料混入至透明樹脂。因此，對引線施加之熱應力進一步變大。
根據本發明的第1形態，半導體裝置具備：連接端子；半導體晶片，其於一面具有電極墊；引線，其將連接端子與半導體晶片的電極墊予以連接；以及透明樹脂，其覆蓋半導體晶片的一面，且將連接端子與引線密封；引線具備：第1接合部，其接合於電極墊；第2接合部，其接合於連接端子；以及環圈部，其與第1接合部相連而形成，且於第2接合部的相反側具有折回部；於環圈部與第1接合部之間、及環圈部與引線的其他部分之間，分別設置有既定間隔。
根據本發明的第2形態，於第1形態之半導體裝置中，環圈部與第1接合部隔開之部分的間隙較佳為引線的直徑的0.3~1.5倍左右。
根據本發明的第3形態，於第1或2形態之半導體裝置中，較佳為進而具有基板；連接端子形成於基板，半導體晶片接合於基板上。
根據本發明的第4形態，於第1至3中任一個形態之半導體裝置中， 較佳為透明樹脂中不含有由二氧化矽形成之填料。
根據本發明的第5形態，於第1至4中任一個形態之半導體裝置中，較佳為半導體晶片的一面設為矩形形狀，且半導體晶片具有分別沿著一面的周緣的相對向之至少一對側邊而排列之複數個電極墊；連接端子對應於各電極墊而排列；各連接端子與各電極墊分別由一根引線連接；至少於設置在最靠近半導體晶片的角部之位置之引線，形成有環圈部。
根據本發明的第6形態，於第5形態所記載之半導體裝置中，較佳為於全部引線形成有環圈部。
根據本發明的第7形態，半導體裝置之製造方法係以如下方法形成：準備形成有連接端子之基板；將形成有電極墊之半導體晶片搭載於基板上，利用引線將各連接端子與各電極墊予以接合；利用透明樹脂將半導體晶片的主面、引線及自半導體晶片露出之基板的部分密封；其特徵在於：當對各連接端子與各電極墊進行引線接合時，將引線的一端球焊於電極墊上，於電極墊上形成球部；於引線形成環圈部，該環圈部與球部相連而形成，且於較電極墊更靠半導體晶片內側處具有折回部；將引線接合於連接端子；藉由透明樹脂將半導體晶片與引線密封；當於引線形成環圈部時，在環圈部與球部之間、及環圈部與引線的其他部分之間，分別設置既定間隔。
根據本發明的第8形態，於第7形態之半導體裝置之製造方法中，較佳為當藉由透明樹脂將半導體晶片與引線密封時，藉由灌注進行密封。
根據本發明的第9形態，於第7或8形態之半導體裝置之製造方法中，較佳為透明樹脂中不含有由二氧化矽形成之填料。
根據本發明，於引線形成環圈部，在該環圈部與接合於電極墊之接合部之間、及該環圈部與引線的其他部分之間，分別具有既定間隙，且於連接端子的相反側具有折回部。因此，能夠因引線的環圈部變形而吸收熱應力，能夠降低由透明樹脂密封之半導體裝置之外形，且能夠抑制引線之斷裂。
10‧‧‧半導體晶片
20‧‧‧電路基板(基板)
21‧‧‧連接端子
30‧‧‧引線
31‧‧‧第1接合部
32‧‧‧環圈部
32a‧‧‧折回部
33‧‧‧第2接合部
40‧‧‧透明樹脂
100‧‧‧半導體裝置
圖1表示作為本發明的一個實施形態之半導體裝置，(a)係半導體裝置的剖面圖，(b)係自上方觀察半導體裝置的平面圖。
圖2係圖1所圖示之半導體裝置的主要部分放大圖。
圖3係用以說明形成圖2所圖示之具有環圈部之引線時的毛細管之移動方向的圖。
圖4(a)~(e)係用以說明對應於圖3所圖示之毛細管之移動而形成之引線的形狀之圖。
(半導體裝置100之整體構造)
以下，與圖式一併說明本發明的半導體裝置及半導體裝置之製造方法之一個實施形態。圖1表示本發明的半導體裝置100之一個實施形態，圖1(a)係半導體裝置100的剖面圖，圖1(b)係自上方觀察半導體裝置100的平面圖。作為一個實施形態而表示之半導體裝置100具備半導體晶片10、電路基板(基板)20、引線30及透明樹脂40。
半導體晶片10於俯視時具有矩形形狀，且於主面(上表面)側的中央具有包含複數個受光元件12a、12b之受光部12。於受光部12的周圍，分別沿著一對側邊11而排列有複數個電極墊10a。
於電路基板20的一面(上表面)形成有具有連接端子21之配線圖案(未圖示)，該連接端子21與沿著半導體晶片的一對側邊11排列之半導體晶片10的各電極墊10a相對應。於圖1(b)中，排列為左右二行之一對連接端子21係沿著半導體晶片10的各側邊11排列。半導體晶片10藉由晶片接合材料51而接合於該排列為左右二行之一對連接端子21的行間的大致中央。於電路基板20的另一面，在與各連接端子21相對向之位置形成有外部端子22，各連接端子21與各外部端子22由通孔23連接。
引線30由例如金線或銅系金屬線等形成。複數根引線30各自的一端部接合於半導體晶片10的電極墊10a，另一端部接合於電路基板20的連接端子21。引線30與電路基板20的連接端子21之間的連接部較佳為處於通孔23的區域外。然而，若為於通孔23內填充有導電材料之構造，則即便上述連接部處於通孔23上，亦無影響。於引線30上，在接合於半導體晶片10的電極墊10a之接合部31(圖2)附近形成有環圈部32。引線30之詳情將後述。
透明樹脂40覆蓋半導體晶片10的主面、包含與半導體晶片10的電極墊10a接合之接合部31(圖2)及與連接端子21接合之接合部33(圖2)之各引線30整體、以及自半導體晶片10露出之電路基板20的一面。亦即，透明樹脂40係將半導體晶片10密封之密封構件。透明樹脂40由例如環氧樹脂或矽樹脂形成，且藉由造模法或灌注(potting)等形成。藉 由灌注進行之密封無需製作模具，能夠廉價且高效率地進行，但對於形成有引線30之半導體晶片10而言，難點在於會在樹脂表面形成凹凸。然而，對於在引線30上形成有與導體晶片10的主面大致平行之環圈部32之構造而言，即便於藉由灌注而形成透明樹脂40之情形時，透明樹脂40之表面亦形成得大致平坦。因此，於上述一個實施形態所示之半導體裝置100中，較佳為藉由灌注而形成透明樹脂40。又，為了確保透明樹脂40之透光性，較佳為不於透明樹脂40中混入二氧化矽等使線膨脹係數降低之填料。然而，若該填料極微量，其程度能夠使透明樹脂40確保既定透光性，則混入有該填料亦無妨。
(引線30之接合構造)
圖2係圖1中的半導體裝置100的主要部分放大圖。引線30於一端部具有接合於半導體晶片10的電極墊10a之第1接合部31。第1接合部31為如下球焊部，其藉由毛細管71(參照圖4)使引線30的一端部熔融而形成球，將該球接合於電極墊。引線30於另一端部具有接合於電路基板20的連接端子21之第2接合部33。又，引線30具有與第1接合部31相連而形成之環圈部32。
環圈部32具有如下形狀，即，自第1接合部31向第2接合部33的相反側被抽出，於折回部32a處折回，向第2接合部33側延伸。環圈部32係與第1接合部31隔開間隙S而形成，並且與引線30的其他部分之間亦隔開間隙S而形成。亦即，於環圈部32與第1接合部31之間、及環圈部32與引線30的其他部分之間，分別設置有既定間隙S。間隙S較佳為引線30的直徑的0.3~1.5倍左右。半導體裝置100之外形隨著間隙S變大 而成比例地變高。然而，若將間隙S設為引線30的直徑的0.3倍以下，則環圈部32會與第1接合部31或引線30的其他部分接觸，從而妨礙引線30之變形。
由於透明樹脂40、包含矽等之半導體晶片10及電路基板20之線膨脹係數不同，故而因溫度之上升或下降，半導體裝置100的上部側以成為凸狀或凹狀之方式而變形。由於該半導體裝置100之變形，熱應力施加至引線30。由於在引線30上形成有環圈部32，故而能夠因該環圈部32變形而減輕熱應力。然而，若環圈部32與第1接合部31或引線30的其他部分接觸，則會妨礙環圈部32之變形，引線30斷裂之可能性變大。於上述一個實施形態中，在環圈部32與第1接合部31之間，略微設置有例如引線30直徑的0.3~1.5倍左右之間隙S。因此，即便為降低半導體裝置100之外形之構造，仍能夠獲得抑制由熱應力引起之引線30的斷裂之效果。
(半導體裝置100之製造方法)
對半導體裝置100之製造方法進行說明。如圖1(a)、(b)所圖示，準備如下電路基板20，該電路基板20的連接端子21、通孔23、外部端子22排列為二行。將如下半導體晶片10配置於電路基板20的排列為二行之連接端子21之行間而進行晶片接合，該半導體晶片10於主面形成有受光部12，且於受光部12的周圍與相對向之一對側邊11之間設置有電極墊。藉此，半導體晶片10的底面藉由晶片接合材料51而固定於電路基板20的一面上。其次，藉由使用了引線30之引線接合，將半導體晶片10的各電極墊10a與電路基板20的各連接端子21予以連接。引線接合方法之詳情將後述。繼而，藉由造模法或灌注法等，利用透明樹脂40將半導體晶片10密封。以使 透明樹脂40覆蓋半導體晶片10的主面、包含接合於半導體晶片10的電極墊之第1接合部31及接合於連接端子21的第2接合部33之各引線30整體、以及自半導體晶片10露出之電路基板20的一面之方式，利用透明樹脂40進行密封。藉此，製作圖1(a)、(b)所圖示之半導體裝置100。其次，對引線接合方法之詳情進行說明。
(引線接合方法)
圖3係用以說明形成圖2所圖示之具有環圈部之引線時的毛細管之移動方向的圖，圖4(a)~(e)係用以說明對應於圖3所圖示之毛細管之移動而形成之引線的形狀之圖。以下，參照圖3及圖4(a)~(e)，對引線接合方法進行說明。藉由毛細管71將引線30的一端加熱而使其成為球狀，且球焊於半導體晶片10的電極墊10a。於半導體晶片10的電極墊10a上形成引線30的第1接合部31(參照圖4(a))。
解除未圖示之引線夾對於引線30之保持，使毛細管71如箭頭101所示，沿著大致垂直方向移動，使引線30的一端部自第1接合部31起大致垂直地延伸(參照圖4(b))。
使毛細管71如箭頭102所示，向接合之連接端子21的相反側沿著水平方向移動。引線30的一端部自第1接合部31向接合之連接端子21的相反側傾斜(參照圖4(c))。再者，所謂連接端子21的相反側，較佳為相對於連接端子21偏差大致180°之方向，但不限於此，只要為朝向半導體晶片10內側之方向即可。又，亦可將使毛細管71向箭頭101及箭頭102該兩個方向移動之方法設為如下方法，即，如圖3之箭頭101a所示，使毛細管71向斜上方移動。
使毛細管71如箭頭103所示，朝向接合之連接端子21側而向斜下方移動。藉此，於引線30上，與第1接合部31相連地形成在折回部32a處折回之環圈部32(參照圖4(d))。環圈部32係以不與第1接合部31或引線30的其他部分接觸之方式，即，以與第1接合部31之間存在間隙S之方式而形成。如上所述，間隙S較佳為引線30的直徑的0.3~1.5倍左右，但並不限定於此。又，折回部32a係以自第1接合部31觀察，位於接合之連接端子21的相反側之方式而形成。對於環圈部32的折回部32a位於第1接合部31之垂直上方或與接合之連接端子21相同之一側的構造而言，引線30之外形會變高，換言之，半導體裝置100之外形會變高。
為了於引線30形成環圈部32，需要使毛細管71以相對於引線30的延伸部折回之方式移動。因此，如圖4(c)所圖示，於引線30向斜上方延伸之狀態下，較佳為使毛細管71向斜下方移動。
使毛細管71如箭頭104所示，沿著大致垂直方向移動，於引線30形成與環圈部32相連之延伸部分(參照圖4(e))。
使毛細管71如箭頭105所示，向接合之連接端子21移動。毛細管71既可向斜下方移動，亦可進行水平方向之移動與朝向下方之移動該2種移動。
藉由毛細管71將引線30加熱，將引線30的已熔融之部分接合於連接端子21，且切斷引線30。藉由引線30的另一端部，形成接合於連接端子21之第2接合部33。第2接合部33亦可設為球焊部。
如以上說明所述，於上述一個實施形態中，在引線30上的與電極墊10a接合之第1接合部31形成環圈部32，該環圈部32與該第1 接合部31及引線30的其他部分均隔開，且於連接端子21的相反側具有折回部32a。因此，能夠因引線30的環圈部32變形而吸收熱應力，能夠降低被透明樹脂40密封之半導體裝置100之外形，且能夠抑制引線30之斷裂。
再者，於上述一個實施形態中，例示了將半導體晶片10安裝於電路基板20上之構造。然而，亦可使用引線框架來代替電路基板20。亦即，能夠設為如下構造：將半導體晶片10接合於引線框架本體的模具，藉由引線30將半導體晶片10的各電極墊連接於與引線框架本體分離之各連接端子。
於上述一個實施形態中，例示了如下構造：於連接半導體晶片10的電極墊10a與電路基板20的連接端子21之全部引線30形成環圈部32。於矩形形狀的半導體裝置100中，最大的熱應力作用於各個角部。因此，亦可僅於設置在最靠近各個角部之位置之引線30形成環圈部32。
於上述一個實施形態中，例示了如下構造：電路基板20與透明樹脂40具有相同外形、尺寸。然而，即便於電路基板呈具有半導體晶片10以外的電子零件之較大形狀之情形時，亦能夠應用本發明。於較大的電路基板之情形時，透明樹脂40只要具有將半導體晶片10與引線30密封之形狀、尺寸即可，電路基板的其他區域亦可自透明樹脂40露出。
於上述一個實施形態中，例示了雙側扁平型(dual flat type)半導體裝置100，但亦能夠設為四側扁平型半導體裝置。又，亦能夠設為單線型半導體裝置，或者適用於LED或有機EL等固體型半導體裝置。
此外，本發明能夠於發明宗旨之範圍內，進行各種變形後被應用，總之，對於半導體晶片的電極墊與連接端子由引線連接，且由透明 樹脂密封之半導體裝置而言，只要於引線上形成有環圈部即可，該環圈部於連接端子的相反側形成有折回部，且與接合於電極墊之接合部、及引線的其他部分均隔開。
以下之優先權基礎申請案的揭示內容作為引用文而併入至本申請案。
日本專利申請案2013年第247099號(2013年11月29日提出申請)
10‧‧‧半導體晶片
10a‧‧‧電極墊
11‧‧‧側邊
12‧‧‧受光部
12a、12b‧‧‧受光元件
20‧‧‧電路基板
21‧‧‧連接端子
22‧‧‧外部端子
23‧‧‧通孔
30‧‧‧引線
32‧‧‧環圈部
40‧‧‧透明樹脂
51‧‧‧晶片接合材料
100‧‧‧半導體裝置

Claims (12)

  1. 一種半導體裝置，其具備：連接端子；半導體晶片，其於一面具有電極墊；引線，其將上述連接端子與上述半導體晶片的上述電極墊予以連接；以及透明樹脂，其覆蓋上述半導體晶片的上述一面，且將上述連接端子與上述引線密封；上述引線具備：第1接合部，其接合於上述電極墊；第2接合部，其接合於上述連接端子；以及環圈部，其與上述第1接合部相連而形成，且於上述第2接合部的相反側具有折回部；於上述環圈部與上述第1接合部之間、及上述環圈部與上述引線的其他部分之間，分別設置有既定間隔。
  2. 如申請專利範圍第1項之半導體裝置，其中，上述環圈部與上述第1接合部隔開之部分的間隙為上述引線的直徑的0.3~1.5倍左右。
  3. 如申請專利範圍第1項之半導體裝置，其中，進而具有基板；上述連接端子形成於上述基板，上述半導體晶片接合於上述基板上。
  4. 如申請專利範圍第2項之半導體裝置，其中，進而具有基板；上述連接端子形成於上述基板，上述半導體晶片接合於上述基板。
  5. 如申請專利範圍第1至4項中任一項之半導體裝置，其中，上述透明樹脂中不含有由二氧化矽形成之填料。
  6. 如申請專利範圍第1至4項中任一項之半導體裝置，其中，上述半導體晶片的上述一面設為矩形形狀，且上述半導體晶片具有分別沿著上述一面的周緣的相對向之至少一對側邊而排列之複數個上述電極墊；上述連接端子對應於上述各電極墊而排列；上述各連接端子與上述各電極墊分別由一根上述引線連接；至少於設置在最靠近上述半導體晶片的角部之位置之上述引線，形成有上述環圈部。
  7. 如申請專利範圍第5項之半導體裝置，其中，上述半導體晶片的上述一面設為矩形形狀，且上述半導體晶片具有分別沿上述一面的周緣的相對向之至少一對側邊而排列之複數個上述電極墊；上述連接端子對應於上述各電極墊而排列；上述各連接端子與上述各電極墊分別由一根上述引線連接；至少於設置在最靠近上述半導體晶片的角部之位置之上述引線，形成有上述環圈部。
  8. 如申請專利範圍第6項之半導體裝置，其中，於全部上述引線形成有上述環圈部。
  9. 如申請專利範圍第7項之半導體裝置，其中，於全部上述引線形成有上述環圈部。
  10. 一種半導體裝置之製造方法，其係如下半導體裝置之製造方法：準備形成有連接端子之基板；將形成有電極墊之半導體晶片搭載於上述基板上，利用引線將上述各連接端子與上述各電極墊予以接合；利用透明樹脂將上述半導體晶片的主面、上述引線及自上述半導體晶片露出之上述基板的部分密封；其特徵在於：當對上述各連接端子與上述各電極墊進行引線接合時，將上述引線的一端球焊於上述電極墊上，於上述電極墊上形成球部；於上述引線形成環圈部，該環圈部與上述球部相連而形成，且於較上述電極墊更靠上述半導體晶片內側處具有折回部；將上述引線接合於上述連接端子；藉由透明樹脂將上述半導體晶片與上述引線密封；當於上述引線形成環圈部時，在上述環圈部與上述球部之間、及上述環圈部與上述引線的其他部分之間，分別設置既定間隔。
  11. 如申請專利範圍第10項之半導體裝置之製造方法，其中，當藉由透明樹脂將上述半導體晶片與上述引線密封時，藉由灌注進行密封。
  12. 如申請專利範圍第10或11項之半導體裝置之製造方法，其中，上述透明樹脂中不含有由二氧化矽形成之填料。
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