TW201448282A - 發光元件安裝用基體及具備其之發光裝置、及導線架 - Google Patents

發光元件安裝用基體及具備其之發光裝置、及導線架 Download PDF

Info

Publication number
TW201448282A
TW201448282A TW103109834A TW103109834A TW201448282A TW 201448282 A TW201448282 A TW 201448282A TW 103109834 A TW103109834 A TW 103109834A TW 103109834 A TW103109834 A TW 103109834A TW 201448282 A TW201448282 A TW 201448282A
Authority
TW
Taiwan
Prior art keywords
light
main surface
emitting element
concave surface
region
Prior art date
Application number
TW103109834A
Other languages
English (en)
Other versions
TWI539628B (zh
Inventor
Ryohei Yamashita
Ryoichi Yoshimoto
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of TW201448282A publication Critical patent/TW201448282A/zh
Application granted granted Critical
Publication of TWI539628B publication Critical patent/TWI539628B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29364—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45169—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45173—Rhodium (Rh) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45184—Tungsten (W) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45639—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45647—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45655—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45657—Cobalt (Co) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/4566—Iron (Fe) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45673—Rhodium (Rh) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/4568—Molybdenum (Mo) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45684—Tungsten (W) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12035—Zener diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/183—Connection portion, e.g. seal
    • H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

本發明之發光元件安裝用基體之特徵在於：具備導線電極及樹脂成形體，於剖面視圖中，該導線電極具有第1主面、與上述第1主面相反側之第2主面、及包含連續於上述第1主面之第1凹面區域及連續於上述第2主面之第2凹面區域之一端面，該樹脂成形體使上述第1主面之至少一部分及上述第2主面之至少一部分露出，覆蓋上述一端面之至少一部分，與上述導線電極成形為一體；上述第2凹面區域包含距上述第1主面最近之最接近部及較上述最接近部為外側且向上述第2主面側延伸之延伸部，且上述第1凹面區域被設置於較上述第2凹面區域之上述最接近部為外側。

Description

發光元件安裝用基體及具備其之發光裝置、及導線架
本發明係關於一種發光元件安裝用基體及具備其之發光裝置、及導線架。
例如，於日本專利特開2012-039109號公報中記載有如下之半導體裝置，其具有：自正背兩面對金屬基板實施蝕刻而製造之導線架、載置於導線架之LED(發光二極體)元件、具有包圍LED元件之凹部且一體成形於導線架之為外側樹脂部、及填充於凹部內之密封樹脂部。
然而，於日本專利特開2012-039109號公報中記載之半導體裝置中，存在如下情況：通過導線架與為外側樹脂部之間之微細間隙，密封樹脂部之成分漏出至背面側，或焊料之助焊劑滲入凹部內。
於是，本發明係鑒於上述情況而完成者，其目的在於提供一種易於防止密封樹脂成分之漏出或焊料之助焊劑之滲入的發光元件安裝用基體或具備其之發光裝置、或導線架。
為了解決上述課題，本發明之發光元件安裝用基體之特徵在於：於剖面視圖中其具備一對正負導線電極及樹脂成形體，該一對正負導線電極具有第1主面、與上述第1主面相反側之第2主面、及包含連續於上述第1主面之第1凹面區域及連續於上述第2主面之第2凹面區 域之一端面，該樹脂成形體使上述第1主面之至少一部分及上述第2主面之至少一部分露出，覆蓋上述一端面之至少一部分，與上述導線電極成形為一體；上述樹脂成形體形成用以收納發光元件之凹部，上述第2凹面區域包含距上述第1主面最近之最接近部及較上述最接近部為外側且向上述第2主面側延伸之延伸部，上述延伸部至少設置於上述一對正負導線電極之對向之端面，上述第1凹面區域被設置於較上述第2凹面區域之上述最接近部為外側。
又，本發明之發光裝置之特徵在於：其具備上述之發光元件安裝用基體及安裝於該發光元件安裝用基體之發光元件。
又，本發明之特徵在於：其係具有懸置導線部及保持於上述懸置導線部之複數個單一基體區域的板狀導線架，且上述單一基體區域於剖面視圖中具有：第1主面、與上述第1主面相反側之第2主面、及包含連續於上述第1主面之第1凹面區域及連續於上述第2主面之第2凹面區域的一端面，上述第2凹面區域包含：距上述第1主面最近之最接近部、及較上述最接近部為外側且向上述第2主面側延伸之延伸部，上述延伸部至少被設置於上述單一區域中對向之導線架之端面，上述第1凹面區域被設置於較上述第2凹面區域之上述最接近部為外側。
根據本發明，可將導線電極或導線架之單一基體區域之周緣部之強度維持得較高，並且可抑制密封樹脂成分之漏出或焊料助焊劑之滲入。
以下，結合隨圖示示對本發明之上述及其他目的及特徵進行詳細描述，使之更加明確。
10、11‧‧‧導線電極
10a‧‧‧第1主面
10b‧‧‧第2主面
10ca‧‧‧端面之第1凹面區域
10ch‧‧‧端面之第2 凹面區域
10cbe‧‧‧延伸部
10cc‧‧‧端面之中間區域
P、R‧‧‧最接近部
20‧‧‧樹脂成形體
25‧‧‧凹部側壁面
30‧‧‧發光元件
40‧‧‧接著劑
50‧‧‧金屬線
60‧‧‧密封構件
70‧‧‧螢光體
80‧‧‧保護元件
100‧‧‧發光裝置
200‧‧‧發光元件安裝用基體
300‧‧‧導線架
310‧‧‧懸置導線部
350‧‧‧單一基體區域
351a‧‧‧第1主面
351b‧‧‧第2主面
351ca‧‧‧端面之第1凹面區域
351cb‧‧‧端面之第2凹面區域
351cbe‧‧‧延伸部
351cc‧‧‧端面之中間區域
Q‧‧‧最接近部
圖1A係本發明之一實施形態之發光裝置之概略俯視圖，圖1B係圖1A之A-A剖面之概略剖面圖，圖1C係圖1A之B-B剖面之概略剖面圖。
圖2A係本發明之一實施形態之發光元件安裝用基體之概略俯視圖，圖2B係概略仰視圖，圖2C係概略側視圖。
圖3A係本發明之一實施形態之導線架之一部分之概略俯視圖，圖3B係圖3A之C-C剖面之概略剖面圖。
圖4係將本發明之另一實施形態之發光裝置之一部分放大顯示的概略剖面圖。
以下，適當參照圖示對本發明之實施形態進行說明。但，以下所說明之發光裝置、發光元件安裝用基體、及導線架係用於將本發明之技術思想具體化者，只要並無特別記載，則本發明並不限定於以下例子。又，於一實施形態、實施例中說明之內容亦可用於其它實施形態、實施例。再者，為了更明確地進行說明，有時會誇張各圖示所示之構件之大小或位置關係等。
再者，以下圖中所示之「x」方向為「橫」方向，「y」方向為「縱」方向，「z」方向為「上下」方向或「厚度(高度)」方向。又，以下所示之實施形態及實施例之發光裝置、發光元件安裝用基體、及導線架於俯視中，橫方向為長方向，縱方向為短方向，但並不限定於此，例如俯視時亦可呈大致正方形。
<實施形態1>
圖1A係實施形態1之發光裝置之概略俯視圖，圖1B、1C分別為表示圖1A中之A-A剖面、B-B剖面之概略剖面圖。又，圖2A、2B、2C分別為實施形態1之發光元件安裝用基體之概略俯視圖、概略仰視圖、概略側視圖。
如圖1A~C所示，實施形態1之發光裝置100具備發光元件安裝用基體200、及安裝於該發光元件安裝用基體200之發光元件30。更詳細而言，發光裝置100主要於發光元件安裝用基體200上安裝發光元件30 並利用密封構件60進行密封而構成。再者，本例之密封構件60含有螢光體70，但亦可省略。
如圖1A~C、圖2A~C所示，發光元件安裝用基體200具備導線電極10、11及與導線電極10、11成形為一體之樹脂成形體20。以下，有時將左側之導線電極10作為第1導線電極，將右側之導線電極11作為第2導線電極。導線電極於本例中有2個，但亦可為1個，或為3個以上。導線電極10、11於發光元件安裝用基體200之橫方向上排列。導線電極10、11為板狀，尚未實質地被彎曲加工。第1導線電極10於橫方向上比第2導線電極11長。第1及第2導線電極10之縱方向之長度(寬度)大致相同。第1導線電極10具有第1主面10a、與第1主面10a相反側之第2主面10b、及連續於第1主面10a及第2主面10b之端面。於圖示之例中，導線電極10、11之第1主面10a為上表面，第2主面10b為下表面。關於導線電極10、11，於使其等相互分離之分離區域填入有樹脂成形體20，該分離區域作為電絕緣區域而一體化地保持於樹脂成形體20中。第2導線電極11亦同樣具有第1主面、第2主面及端面，可以說與第1導線電極11實質上相同，因此並未特別標註符號並省略說明。
再者，導線電極之第1主面10a及第2主面10b較佳為除了有意地形成之槽或凹部外為平坦面。又，導線電極之第1主面10a及第2主面10b較佳為除了有意地形成之槽或凹部外大致平行。進而，第1及第2導線電極10、11之最大寬度(主要為縱方向之最大寬度)可不同，但較佳為最大寬度大致相同。第1及第2導線電極10、11可按於俯視中相互傾斜之關係進行配置，但較佳為大致平行地配置。第1及第2導線電極10、11可按於俯視中與橫方向平行之中心軸於縱方向相互移位之關係進行配置，但較佳為按於俯視中與橫方向平行之中心軸大致一致之方式進行配置。
樹脂成形體20於俯視中具有橫方向較長之長方形形狀。樹脂成 形體20與導線電極10、11共同形成收納發光元件之凹部。具體而言，凹部之底面由導線電極10、11之上表面及樹脂成形體20之表面構成。凹部之側壁面25(凹部側壁之內面)由樹脂成形體20之表面構成。凹部之側壁面25可垂直，但為了效率良好地擷取自發光元件射出之光，較佳為以隨著接近凹部底面而開口寬度變窄之方式傾斜。再者，於本例中，已例示具有凹部之發光元件安裝用基體，但凹部亦可省略，可製成例如平板狀之發光元件安裝用基體。
又，樹脂成形體20係使導線電極之第1主面10a之至少一部分及第2主面10b之至少一部分露出，覆蓋端面之至少一部分。特別是於本例中，除懸置導線部(310)以外，樹脂成形體20覆蓋導線電極10、11之端面之大致全域。又，樹脂成形體20覆蓋導線電極之第1主面10a之一部分(特別是其周緣部)。進而，導線電極之第2主面10b係其至少一部分自樹脂成形體20露出，與樹脂成形體20共同構成發光元件安裝用基體200之下表面。藉此，可製成散熱性優異之發光元件安裝用基體。
並且，導線電極之端面具有連續於第1主面10a之第1凹面區域10ca及連續於第2主面10b之第2凹面區域10cb。又，第2凹面區域10cb包含距第1主面10a最近之最接近部P及較最接近部P為外側且向第2主面10b側延伸之延伸部10cbe。第1凹面區域10ca被設置於較第2凹面區域之最接近部P為外側。再者，所謂之導線電極之「外側」、「內側」，係以作為考慮對象之導線電極之中心為基準而考慮者。
如上所述般構成之發光元件安裝用基體200及具備其之發光裝置100係利用第1凹面區域10ca及第2凹面區域10cb使導線電極10、11之端面之表面積(換言之，為剖面視圖中之端面之全長)增大，而可抑制密封樹脂成分之漏出或焊料助焊劑之滲入。又，可提高導線電極10、11之周緣部與樹脂成形體20之密接性。特別是第2凹面區域之延伸部10cbe作為抑制密封樹脂成分之漏出或焊料助焊劑之滲入之屏障而發 揮功能，可有效地抑制密封樹脂成分之漏出或焊料助焊劑之滲入。又，導線電極10、11於第2凹面區域之最接近部P處容易變薄，但藉由使第1凹面區域10ca處於較最接近部P為外側，可將導線電極之相對較薄之周緣部之強度維持得較高。
再者，如上所述之導線電極10、11之端面形狀可於利用蝕刻加工導線架時根據掩模之特性、形狀、位置關係等形成。又，第1凹面區域10ca及第2凹面區域10cb較佳為由大致相同之曲面構成，亦可由平坦面及曲面之組合構成，可具有凹凸。
以下，對發光裝置100及發光元件安裝用基體200之較佳形態進行說明。
如圖1A~C所示，導線電極之端面較佳為於第1凹面區域10ca與第2凹面區域10cb之間包含中間區域10cc。藉此，使導線電極之端面之表面積、換言之為剖面視圖中之端面之全長進一步增大，而容易抑制密封樹脂成分之漏出或焊料助焊劑之滲入。又，容易將第1凹面區域10ca與第2凹面區域10cb之間之壁厚維持得較大，且將導線電極之相對較薄之周緣部之強度維持得較高。於圖示之例中，中間區域10cc連續於第1凹面區域10ca及第2凹面區域10cb而設置。
如圖1A~C所示，中間區域10cc較佳為大致平坦。藉此，自第1凹面區域10ca向中間區域10cc之連接部及/或自第2凹面區域10cb向中間區域10cc之連接部容易被設置為彎曲之形狀，而容易抑制密封樹脂成分之漏出或焊料助焊劑之滲入。
如圖1A~C所示，第2凹面區域10cb之表面積較佳為大於第1凹面區域10ca之表面積。換言之，較佳為於剖面視圖中，第2凹面區域10cb之長度大於第1凹面區域10ca之長度。藉此，第2凹面區域之延伸部10cbe之表面積容易被設置得較大，因此容易抑制密封樹脂成分之漏出或焊料助焊劑之滲入。又，覆蓋第2凹面區域10cb之樹脂成形體 20容易被設置得較厚，因此可自第2主面10b側強力支撐導線電極10、11。
如圖1A~C所示，較佳為導線電極之第1主面10a側為發光元件安裝側。若導線電極之第1主面10a側為發光元件安裝側，則第2凹面區域之延伸部10cbe被設置為面對第2主面10b側。藉此，於發光元件安裝側，容易高精度地形成覆蓋導線電極10、11之端面之樹脂成形體20。藉此，進而容易抑制密封樹脂成分之漏出或焊料助焊劑之滲入。
第1凹面區域10ca可按向第2主面10b側超過第2凹面區域10cb之最接近部P的深度進行設置，但較佳為如圖1A~C所示，按比第2凹面區域10cb之最接近部P更接近第1主面10a側之深度進行設置。換言之，較佳為第1凹面區域10ca之為外側之端部比第2凹面區域10cb之最接近部P接近第1主面10a側。藉此，容易將第1凹面區域10ca與第2凹面區域10cb之間之壁厚維持得較大，且容易將導線電極之相對較薄之周緣部之強度維持得較高。再者，第1凹面區域10ca亦可具有距第2主面10b最近之最接近部(記作第2最接近部)及較該第2最接近部為外側且向第1主面10a側延伸之延伸部(記作第2延伸部)。藉此，可更有效地抑制密封樹脂成分之漏出或焊料助焊劑之滲入。
若如上之導線電極10、11之端面形狀形成於導線電極之除懸置導線部(310)以外之周緣之一部分，則具有抑制密封樹脂成分之漏出或焊料助焊劑之滲入的效果。又，導線電極10、11之如上之端面形狀形成於導線電極之除懸置導線部(310)以外之周緣部之大致全域(圖2A、2B之劃斜線部分)時，容易更進一步抑制密封樹脂成分之漏出或焊料助焊劑之滲入，故而較佳。再者，對懸置導線部亦可實施與上述導線電極10、11之端面形狀相同之加工。
圖3A係實施形態1之導線架之一部分之概略俯視圖，圖3B係表示圖3A中之C-C剖面之概略剖面圖。如圖3A所示，導線架300為板狀， 具有懸置導線部310及保持於懸置導線部310之複數個單一基體區域350。單一基體區域350具有第1主面351a、與第1主面351a相反側之第2主面351b、及連續於第1主面351a及第2主面351b之端面。單一基體區域350之端面具有連續於第1主面351a之第1凹面區域351ca及連續於第2主面351b之第2凹面區域351cb。第2凹面區域351cb包含距第1主面351a最近之最接近部Q及向較最接近部Q為外側延伸之延伸部351cbe。並且，第1凹面區域351ca被設置於較第2凹面區域之最接近部Q為外側。
如圖3A、圖3B所示，單一基體區域350包含相當於發光元件安裝用基體200中之第1及第2導線電極10、11的2個島狀區域。該單一基體區域350中之第1主面351a、第2主面351b、第1凹面區域351ca、第2凹面區域351cb、中間區域351cc、最接近部Q、延伸部351cbe分別相當於第1及第2導線電極中之第1主面10a、第2主面10b、第1凹面區域10ca、第2凹面區域10cb、中間區域10cc、最接近部P、延伸部10cbe，其等之較佳形態亦與上述導線電極相同。
再者，懸置導線部310係於經單片化之發光元件安裝用基體之端面(側面)，其一部分自樹脂成形體露出並殘存。於自外部對發光元件安裝用基體施加應力時，應力容易集中於懸置導線部之周邊。如圖2A、2B、2C所示，於發光元件安裝用基體200中，懸置導線部(310)無論橫方向、縱方向均位於基體之俯視中之大致中央。藉此，可提高發光元件安裝用基體200對於外部應力之耐性，而抑制樹脂成形體20產生裂紋或缺損。特別是於本例中，第1導線電極10具有沿縱方向設置之懸置導線部(310)。第2導線電極11不具有沿縱方向設置之懸置導線部。第1及第2導線電極10、11均於橫方向(之外側)具有懸置導線部(310)。
<實施形態2>
圖4係將實施形態2之發光裝置之一部分放大顯示之概略剖面圖。圖4所示之例之發光裝置中，導線電極中第1及第2凹面區域相對於主面之配置關係、導線電極與樹脂成形體之關係與實施形態1之發光裝置不同，除此以外之構成實質上相同，因此對除此以外之構成適當省略說明。
又，圖4所示之例之發光裝置亦為導線電極之端面具有連續於第1主面10a之第1凹面區域10ca及連續於第2主面10b之第2凹面區域10cb。又，第2凹面區域10cb包含距第1主面10a最近之最接近部R及較最接近部R為外側且向第2主面10b側延伸之延伸部10cbe。並且，第1凹面區域10ca被設置於較第2凹面區域之最接近部R為外側。
如圖4所示，於本例中，與實施形態1相反，導線電極之第2主面10b側為發光元件安裝側。於此情況下，容易使第1主面10a之露出區域之面積增大，而容易提高發光元件安裝用基體之散熱性。
如圖4所示，於本例中，發光元件安裝側之凹面區域即第2凹面區域10cb之一部分係除面對第1及第2導線電極之分離區域之部分以外均位於較凹部側壁面25為內側。如此，藉由發光元件安裝側之凹面區域之一部分或全部位於較凹部側壁面25為內側，可抑制或回避於樹脂成形體之凹部側壁面25之與導線電極10、11之接觸部產生毛邊。再者，另一方面，於實施形態1中，樹脂成形體之凹部側壁除面對第1及第2導線電極10、11之分離區域之部分外均覆蓋導線電極之第1主面10a(發光元件安裝側)之周緣部。藉此，導線電極10、11之周緣部被樹脂成形體20覆蓋之面積相對較大，容易抑制密封樹脂成分之漏出或焊料助焊劑之滲入。
以下，對本發明之發光裝置、發光元件安裝用基體、及導線架之各構成要素進行說明。
(導線電極10、11，導線架300)
導線電極及導線架可使用與發光元件或保護元件連接而可導電之金屬構件。具體可列舉對銅、鋁、金、銀、鎢、鐵、鎳、鈷、鉬或該等之合金、磷青銅、含鐵銅等金屬板實施壓製或蝕刻、壓延等各種加工而成者。特別是以銅為主成分之銅合金較佳。又，導線電極及導線架之母材可由單層構成，亦可由包含複數之金屬層之多層構成。由單層構成者簡便，較佳。進而，可於導線電極及導線架之表層設置銀、鋁、銠、金、銅或該等之合金等之金屬鍍層或光反射膜，其中較佳為光反射性最優之銀。導線電極及導線架之厚度可任意地選擇，例如0.1mm以上且1mm以下，較佳為0.2mm以上且0.4mm以下。
(樹脂成形體20)
樹脂成形體之母材可列舉：環氧樹脂、環氧改性樹脂、聚矽氧樹脂、聚矽氧改性樹脂、聚雙馬來醯亞胺三樹脂、聚醯亞胺樹脂、聚胺基甲酸酯樹脂等熱硬化性樹脂，脂肪族聚醯胺樹脂、半芳香族聚醯胺樹脂、聚對苯二甲酸乙二酯、聚對苯二甲酸環己烷酯、液晶聚合物、聚碳酸酯樹脂、對排聚苯乙烯、聚苯醚、聚苯硫醚、聚醚碸樹脂、聚醚酮樹脂、聚芳酯樹脂等熱塑性樹脂。又，作為填充劑或著色顏料，可使該等母材中混入玻璃、二氧化矽、氧化鈦、氧化鎂、碳酸鎂、氫氧化鎂、碳酸鈣、氫氧化鈣、矽酸鈣、矽酸鎂、矽灰石、雲母、氧化鋅、鈦酸鋇、鈦酸鉀、硼酸鋁、氧化鋁、氧化鋅、碳化矽、氧化銻、錫酸鋅、硼酸鋅、氧化鐵、氧化鉻、氧化錳、碳黑等之粒子或纖維。
(發光元件30)
發光元件可使用發光二極體(Light Emitting Diode：LED)元件或半導體雷射(Laser Diode：LD)元件等半導體發光元件。發光元件只要為於由各種半導體構成之元件結構中設置有一對正負電極者即可。特別是，較佳為可效率良好地激發螢光體之氮化物半導體(InxAlyGa1-x-yN ，0≦x，0≦y，x+y≦1)之發光元件。除此以外，亦可為發出綠色~紅色光之砷化鎵系、磷化鎵系半導體之發光元件。於為一對正負電極設置於同一面側之發光元件之情形時，用金屬線將各電極與導線電極連接並將其面朝上安裝。於為一對正負電極分別設置於互為相反面之對向電極構造之發光元件的情形時，下表面電極經導電性接著劑接著於導線電極，上表面電極經金屬線與導線電極連接。後述之保護元件之安裝方式亦相同。又，藉由在發光元件之安裝面側設置銀或鋁等金屬層或電介體反射膜，可提高光之擷取效率。1個發光元件安裝用基體所搭載之發光元件之個數可為一個亦可為複數個，其大小或形狀、發光波長亦可任意選擇。複數個發光元件可利用導線電極或金屬線串聯或並聯地連接。又，1個發光元件安裝用基體上亦可搭載例如發藍光及發紅光2種、發藍光及發綠光2種、發藍色/綠色/紅色光3種等組合發光元件。
(接著劑40)
接著劑係將發光元件或保護元件接著於發光元件安裝用基體之構件。絕緣性接著劑可使用環氧樹脂、聚矽氧樹脂、聚醯亞胺樹脂、或該等之改性樹脂或混合樹脂等。作為導電性接著劑，可使用銀、金、鈀等之導電性糊劑，或錫-鉍系、錫-銅系、錫-銀系、金-錫系等焊料，低熔點金屬等針料。
(金屬線50)
金屬線係將發光元件之電極或保護元件之電極與導線電極連接之導線。具體地可使用金、銅、銀、鉑、鋁或該等之合金之金屬線。特別是難以因來自密封構件之應力而發生斷裂、熱阻等優異之金線較佳。又，為了提高光反射性，可為至少表面由銀構成者。
(密封構件60)
密封構件係將發光元件或保護元件、金屬線等密封而保護該等 不受灰塵或水分、外力等之影響的構件。密封構件之母材為具有電絕緣性、可透過自發光元件射出之光(較佳為透過率70%以上)即可。具體可列舉：聚矽氧樹脂、環氧樹脂、酚樹脂、聚碳酸酯樹脂、丙烯酸系樹脂、TPX樹脂、聚降烯樹脂、該等之改性樹脂、或包含一種以上該等樹脂之混合樹脂。亦可為玻璃。其中，聚矽氧樹脂之耐熱性或耐光性優異，固化後之體積收縮較少，因此較佳。又，關於密封構件，亦可於其母材中添加填充劑或螢光體等具有各種功能之粒子。關於填充劑，可使用擴散劑或著色劑等。具體可列舉：二氧化矽、氧化鈦、氧化鎂、碳酸鎂、氫氧化鎂、碳酸鈣、氫氧化鈣、矽酸鈣、氧化鋅、鈦酸鋇、氧化鋁、氧化鐵、氧化鉻、氧化錳、玻璃、碳黑等。填充劑之粒子之形狀可為破碎狀亦可為球狀。又，亦可為中空或多孔質者。
(螢光體70)
螢光體吸收自發光元件射出之一次光之至少一部分，射出與一次光不同波長之二次光。螢光體例如為主要由銪、鈰等鑭系元素賦活之氮化物系螢光體、氮氧化物系螢光體，更具體地可列舉：經銪賦活之α或β賽隆(Sialon)型螢光體、各種氮化矽酸鹼土金屬鹽螢光體、主要由銪等鑭系元素、錳等過渡金屬系元素賦活之鹼土金屬鹵素磷灰石螢光體、鹼土類之鹵矽酸鹽螢光體、鹼土金屬矽酸鹽螢光體、鹵素鹼土金屬硼酸鹽螢光體、鹼土金屬鋁酸鹽螢光體、鹼土金屬矽酸鹽、鹼土金屬硫化物、鹼土金屬硫代鎵酸鹽、鹼土金屬氮化矽、鍺酸鹽、主要由鈰等鑭系元素賦活之稀土鋁酸鹽、稀土矽酸鹽或主要由銪等鑭系元素賦活之有機物及有機錯合物等。又，除上述以外亦可使用具有相同性能、效果之螢光體。藉此，可製成射出可見波長之一次光及二次光之混色光(例如白色系)之發光裝置、或由紫外光之一次光激發而射出可見波長之二次光之發光裝置。再者，螢光體可沈積於發光元件安 裝用基體之凹部底面側，亦可分散於凹部內。
(保護元件80)
保護元件係用以保護發光元件免受靜電或高電壓突波之元件。具體可列舉齊納二極體。為了抑制光吸收，保護元件可被白色樹脂等光反射構件覆蓋。
[實施例]
以下，對本發明之實施例進行詳述。再者，毋庸置疑，本發明並非僅限於以下所示之實施例。
<實施例1>
實施例1之發光裝置係具有圖1A~C所示之例之發光裝置100之構造的頂視式SMD(Surface Mount Device，表面安裝器件)型LED。發光裝置之外形大致呈長方體。發光裝置具備作為發光裝置用封裝體之發光元件安裝用基體。發光元件安裝用基體係大小為橫3.0mm、縱1.0mm、厚0.52mm，樹脂成形體於構成正極、負極之第1及第2導線電極上一體成形而構成。該發光元件安裝用基體係藉由如下方式而製造：將導線架設置於模具內，注入具有流動性之狀態之樹脂成形體之構成材料並使之硬化、脫模，此後對各基體進行分離(單片化)，且上述導線架係於懸置導線部保持配置成矩陣狀之複數個單一基體區域(複數組導線電極)而成之加工金屬板。再者，實際中發光元件安裝用基體之分離於發光元件等之安裝步驟及密封步驟後進行。
第1及第2導線電極分別為於表面實施有銀之金屬鍍層、最大厚度為0.2mm之銅合金板狀小片。第1導線電極整體上形成為橫1.65mm、縱0.67mm之俯視矩形(除懸置導線部，角帶有弧度)。第2導線電極形成為橫0.53mm、縱0.67mm之俯視矩形(除懸置導線部，角帶有弧度)。第1導線電極與第2導線電極之間之分離區域之寬度為0.3mm。並且，第1及第2導線電極分別於其端面設置有連續於上表面之 第1凹面區域、連續於下表面之第2凹面區域、及連接第1凹面區域及第2凹面區域之中間區域。第1凹面區域為寬度0.035mm、最大深度0.1mm之曲面狀區域。第2凹面區域為寬度0.135mm、最大深度0.1mm之曲面狀區域。第2凹面區域之上部具有較距其最近之最接近部(最大深度之位置)為外側且向下部側延伸之延伸部。中間區域為寬度0.02mm左右之大致平坦之區域。第1凹面區域(與第1主面之邊界)位於距第2凹面區域之最接近部0.05mm之外側。如此之端面形狀設置於除懸置導線部以外之各導線電極之周緣部全域。又，如此之端面形狀係藉由蝕刻而形成。第1及第2導線電極之下表面之各露出區域與樹脂成形體之下表面實質上為同一面，構成發光裝置即發光元件安裝用基體之下表面。又，第1及第2導線電極之下表面之露出區域大致呈矩形(角帶有弧度)。
樹脂成形體之俯視外形為橫3.0mm、縱1.0mm之長方形，最大厚度為0.52mm，為含有氧化鈦之環氧樹脂製之成形體。於樹脂成形體之上表面側之大致中央形成有橫2.6mm、縱0.6mm、深0.32mm之俯視長方形(角帶有弧度)凹部。凹部之側壁面之傾斜角度相對於凹部底面為約5°。樹脂成形體覆蓋各導線電極之上表面之周緣部及除懸置導線部以外之端面。
於構成發光元件安裝用基體之凹部底面之第1導線電極之上表面，經聚矽氧樹脂之接著劑接著有一個發光元件。該發光元件為於藍寶石基板上依次積層有氮化物半導體之n型層、活性層、p型層而成的LED元件，其可發藍(中心波長約460nm)光，橫700μm、縱300μm、厚150μm。又，發光元件中，p、n電極之一者經金屬線連接於第1導線電極，p、n電極之另一者經金屬線連接於第2導線電極之上表面。金屬線為線徑25μm之金線。再者，於第2導線電極之上表面安裝有縱155μm、橫155μm、厚85μm之作為對向電極構造之齊納二極體的保 護元件。該保護元件係以銀糊劑之接著劑進行接著，其上表面電極經金屬線連接於第1導線電極之上表面。
於收納有發光元件及保護元件之發光元件安裝用基體之凹部，填充密封構件而覆蓋各元件。密封構件係以聚矽氧樹脂為母材，其中含有經鈰賦活之釔鋁石榴石(YAG：Ce)螢光體及二氧化矽填充劑。密封構件之上表面與樹脂成形體之凹部側壁之上表面大致為同一平面，形成大致平坦之面。該密封構件係藉由如下方式而形成：於其具有流動性之狀態下，使用分注器填充於發光元件安裝用基體之凹部內，並藉由加熱等使之硬化。
以如上方式構成之實施例1之發光裝置可取得與實施形態1之發光裝置100相同之效果。
本發明之發光元件安裝用基體或導線架可用於SMD型LED之封裝體或安裝基板。又，使用本發明之發光元件安裝用基體或導線架之發光裝置可用於液晶顯示器之背光光源、各種照明器具、大型顯示器、廣告或指路牌等各種顯示裝置、以及數位視訊攝影機、傳真機、影印機、掃描儀等中之圖像讀取裝置、投影裝置等。
對於本領域中之普通技術人員而言，很明顯：雖然已對本發明之各較佳實施例進行列舉及描述，但本發明並不限定於所揭示之特定實施例，該等實施例被視為僅對本發明之概念進行說明，不應被解釋為限制本發明之範圍，並且其適用於隨附申請專利範圍所界定之發明範圍內之所有修改及變更。本申請案係基於2013年3月14日於日本提出申請之日本專利申請No.2013-052297，其內容被併入本文作為參考。
10、11‧‧‧導線電極
20‧‧‧樹脂成形體
30‧‧‧發光元件
50‧‧‧金屬線
60‧‧‧密封構件
80‧‧‧保護元件
100‧‧‧發光裝置
200‧‧‧發光元件安裝用基體

Claims (11)

  1. 一種發光元件安裝用基體，其包括：一對正負導線電極，其於剖面視圖中具有第1主面、與上述第1主面相反側之第2主面、及包含連續於上述第1主面之第1凹面區域及連續於上述第2主面之第2凹面區域之一端面，及樹脂成形體，其使上述第1主面之至少一部分及上述第2主面之至少一部分露出，覆蓋上述一端面之至少一部分，且與上述導線電極成形為一體；且上述樹脂成形體形成用以收納發光元件之凹部，上述第2凹面區域包含距上述第1主面最近之最接近部、及較上述最接近部為外側且向上述第2主面側延伸之延伸部，上述延伸部至少設置於上述一對正負導線電極之對向之端面，上述第1凹面區域被設置於較上述第2凹面區域之上述最接近部為外側。
  2. 如請求項1之發光元件安裝用基體，其中上述導線電極之上述一端面於上述第1凹面區域及上述第2凹面區域之間包含中間區域。
  3. 如請求項2之發光元件安裝用基體，其中上述中間區域大致平坦。
  4. 如請求項1之發光元件安裝用基體，其中上述第2凹面區域之面積大於上述第1凹面區域之面積。
  5. 如請求項1之發光元件安裝用基體，其中上述導線電極之上述第1主面側為發光元件安裝側。
  6. 一種發光裝置，其具備如請求項1之發光元件安裝用基體、及 安裝於上述發光元件安裝用基體之發光元件。
  7. 一種導線架，其包括：懸置導線部，及保持於上述懸置導線部之複數個單一基體區域；且上述導線架具有板狀形狀，上述單一基體區域於剖面視圖中具有第1主面、與上述第1主面相反側之第2主面、及包含連續於上述第1主面之第1凹面區域及連續於上述第2主面之第2凹面區域之一端面，上述第2凹面區域包含距上述第1主面最近之最接近部、及較上述最接近部為外側且向上述第2主面側延伸之延伸部，上述延伸部至少設置於上述單一基體區域中對向之導線架之端面，上述第1凹面區域被設置於較上述第2凹面區域之上述最接近部為外側。
  8. 如請求項7之導線架，其中上述一端面於上述第1凹面區域及上述第2凹面區域之間包含中間區域。
  9. 如請求項8之導線架，其中上述中間區域大致平坦。
  10. 如請求項7之導線架，其中上述第2凹面區域之表面積大於上述第1凹面區域之表面積。
  11. 如請求項7之導線架，其中上述第1主面側為發光元件安裝側。
TW103109834A 2013-03-14 2014-03-14 發光元件安裝用基體及具備其之發光裝置、及導線架 TWI539628B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013052297A JP6291713B2 (ja) 2013-03-14 2013-03-14 発光素子実装用基体及びそれを備える発光装置、並びにリードフレーム

Publications (2)

Publication Number Publication Date
TW201448282A true TW201448282A (zh) 2014-12-16
TWI539628B TWI539628B (zh) 2016-06-21

Family

ID=50272492

Family Applications (4)

Application Number Title Priority Date Filing Date
TW103109834A TWI539628B (zh) 2013-03-14 2014-03-14 發光元件安裝用基體及具備其之發光裝置、及導線架
TW105108605A TWI568033B (zh) 2013-03-14 2014-03-14 發光元件安裝用基體及發光裝置
TW106140173A TWI645581B (zh) 2013-03-14 2014-03-14 發光元件安裝用基體、發光裝置及導線架
TW105132626A TWI610466B (zh) 2013-03-14 2014-03-14 發光元件安裝用基體及發光裝置

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW105108605A TWI568033B (zh) 2013-03-14 2014-03-14 發光元件安裝用基體及發光裝置
TW106140173A TWI645581B (zh) 2013-03-14 2014-03-14 發光元件安裝用基體、發光裝置及導線架
TW105132626A TWI610466B (zh) 2013-03-14 2014-03-14 發光元件安裝用基體及發光裝置

Country Status (6)

Country Link
US (5) US9117806B2 (zh)
EP (2) EP3190635A1 (zh)
JP (1) JP6291713B2 (zh)
KR (1) KR102122479B1 (zh)
CN (2) CN107104177B (zh)
TW (4) TWI539628B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI828262B (zh) * 2017-08-31 2024-01-01 日商日亞化學工業股份有限公司 導線架、發光裝置用封裝、發光裝置及發光裝置之製造方法
TWI827546B (zh) * 2017-08-31 2024-01-01 日商日亞化學工業股份有限公司 導線架、發光裝置用封裝、發光裝置及發光裝置之製造方法

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6102187B2 (ja) * 2012-10-31 2017-03-29 日亜化学工業株式会社 発光装置用パッケージ及びそれを用いた発光装置
JP6107136B2 (ja) 2012-12-29 2017-04-05 日亜化学工業株式会社 発光装置用パッケージ及びそれを備える発光装置、並びにその発光装置を備える照明装置
JP6291713B2 (ja) 2013-03-14 2018-03-14 日亜化学工業株式会社 発光素子実装用基体及びそれを備える発光装置、並びにリードフレーム
JP6484396B2 (ja) 2013-06-28 2019-03-13 日亜化学工業株式会社 発光装置用パッケージ及びそれを用いた発光装置
US9583689B2 (en) * 2013-07-12 2017-02-28 Lite-On Opto Technology (Changzhou) Co., Ltd. LED package
KR102160075B1 (ko) * 2014-04-22 2020-09-25 서울반도체 주식회사 발광 장치
TW201543720A (zh) * 2014-05-06 2015-11-16 Genesis Photonics Inc 封裝結構及其製備方法
JP6362108B2 (ja) * 2014-09-08 2018-07-25 大口マテリアル株式会社 半導体素子搭載用リードフレーム及びその製造方法
JP6641710B2 (ja) * 2015-03-25 2020-02-05 日亜化学工業株式会社 発光装置及びその製造方法
CN105633373B (zh) * 2015-11-06 2018-06-22 北京化工大学 一种碳包覆多孔一氧化锰复合材料及其制备方法和应用
JP6508529B2 (ja) * 2015-11-30 2019-05-08 大口マテリアル株式会社 Ｌｅｄパッケージ及び多列型ｌｅｄ用リードフレーム、並びにそれらの製造方法
JP6542112B2 (ja) * 2015-11-30 2019-07-10 大口マテリアル株式会社 多列型ｌｅｄ用リードフレーム、並びにｌｅｄパッケージ及び多列型ｌｅｄ用リードフレームの製造方法
JP6332251B2 (ja) * 2015-12-09 2018-05-30 日亜化学工業株式会社 パッケージの製造方法及び発光装置の製造方法、並びにパッケージ及び発光装置
JP6394634B2 (ja) 2016-03-31 2018-09-26 日亜化学工業株式会社 リードフレーム、パッケージ及び発光装置、並びにこれらの製造方法
JP6772087B2 (ja) * 2017-02-17 2020-10-21 新光電気工業株式会社 リードフレーム及びその製造方法
DE102017115798A1 (de) * 2017-07-13 2019-01-17 Alanod Gmbh & Co. Kg Reflektierendes Verbundmaterial, insbesondere für oberflächenmontierte Bauelemente (SMD), und lichtemittierende Vorrichtung mit einem derartigen Verbundmaterial
WO2019075645A1 (en) * 2017-10-17 2019-04-25 Huawei Technologies Co., Ltd. SEALING METHOD
JP6733786B2 (ja) * 2019-07-16 2020-08-05 日亜化学工業株式会社 パッケージ、発光装置及びそれらの製造方法
DE102019120523A1 (de) * 2019-07-30 2021-02-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leiterrahmenverbund, Verfahren zur Herstellung einer Mehrzahl von Bauteilen und Bauteil
US11393774B2 (en) * 2019-08-21 2022-07-19 Stmicroelectronics, Inc. Semiconductor device having cavities at an interface of an encapsulant and a die pad or leads
TWI728816B (zh) 2020-05-21 2021-05-21 健策精密工業股份有限公司 發光二極體模組及其製作方法
US20220005992A1 (en) * 2020-07-06 2022-01-06 Nichia Corporation Light emitting device and manufacturing method for light emitting device
DE102021108604A1 (de) 2021-04-07 2022-10-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit strukturiertem leiterrahmen und gehäusekörper sowie verfahren zur herstellung des bauelements
FR3131079B1 (fr) * 2021-12-20 2024-03-01 Valeo Systemes De Controle Moteur Module de puissance avec surmoulage et systeme electrique comprenant un tel module de puissance
WO2024008513A1 (en) * 2022-07-08 2024-01-11 Ams-Osram Ag Component having anchoring structure and method for producing a component having anchoring structure

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4862246A (en) * 1984-09-26 1989-08-29 Hitachi, Ltd. Semiconductor device lead frame with etched through holes
JPH06116006A (ja) 1992-09-29 1994-04-26 Ibiden Co Ltd セラミックス基板の製造方法
US6201292B1 (en) * 1997-04-02 2001-03-13 Dai Nippon Insatsu Kabushiki Kaisha Resin-sealed semiconductor device, circuit member used therefor
US5977630A (en) * 1997-08-15 1999-11-02 International Rectifier Corp. Plural semiconductor die housed in common package with split heat sink
US6949816B2 (en) * 2003-04-21 2005-09-27 Motorola, Inc. Semiconductor component having first surface area for electrically coupling to a semiconductor chip and second surface area for electrically coupling to a substrate, and method of manufacturing same
US6143981A (en) * 1998-06-24 2000-11-07 Amkor Technology, Inc. Plastic integrated circuit package and method and leadframe for making the package
US6483178B1 (en) * 2000-07-14 2002-11-19 Siliconware Precision Industries Co., Ltd. Semiconductor device package structure
US6794738B2 (en) * 2002-09-23 2004-09-21 Texas Instruments Incorporated Leadframe-to-plastic lock for IC package
JP2004247613A (ja) * 2003-02-14 2004-09-02 Sanyo Electric Co Ltd 半導体装置およびその製造方法
JP2005197329A (ja) * 2004-01-05 2005-07-21 Stanley Electric Co Ltd 表面実装型半導体装置及びそのリードフレーム構造
US7741704B2 (en) * 2006-10-18 2010-06-22 Texas Instruments Incorporated Leadframe and mold compound interlock in packaged semiconductor device
US7683463B2 (en) * 2007-04-19 2010-03-23 Fairchild Semiconductor Corporation Etched leadframe structure including recesses
US7863103B2 (en) * 2008-10-22 2011-01-04 Texas Instruments Incorporated Thermally improved semiconductor QFN/SON package
CN102077371B (zh) * 2008-11-07 2012-10-31 凸版印刷株式会社 引线框及其制造方法和使用引线框的半导体发光装置
US8080436B2 (en) * 2009-07-30 2011-12-20 Nichia Corporation Light emitting device and method of manufacturing the light emitting device
JP2011119557A (ja) * 2009-12-07 2011-06-16 Sony Corp 発光装置及びその製造方法
JP5573176B2 (ja) 2010-01-14 2014-08-20 大日本印刷株式会社 リードフレームおよびその製造方法、ならびに半導体装置およびその製造方法
JP5710128B2 (ja) * 2010-01-19 2015-04-30 大日本印刷株式会社 樹脂付リードフレームの製造方法
KR101867106B1 (ko) * 2010-03-30 2018-06-12 다이니폰 인사츠 가부시키가이샤 Led용 수지 부착 리드 프레임, 반도체 장치, 반도체 장치의 제조 방법 및 led용 수지 부착 리드 프레임의 제조 방법
JP5871174B2 (ja) 2010-07-16 2016-03-01 大日本印刷株式会社 Ｌｅｄ用リードフレームまたは基板、半導体装置、およびｌｅｄ用リードフレームまたは基板の製造方法
US8802501B2 (en) * 2010-07-21 2014-08-12 Stats Chippac Ltd. Integrated circuit packaging system with island terminals and method of manufacture thereof
DE102010034924A1 (de) 2010-08-20 2012-02-23 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP5896302B2 (ja) * 2010-11-02 2016-03-30 大日本印刷株式会社 Ｌｅｄ素子搭載用リードフレーム、樹脂付リードフレーム、半導体装置の製造方法、および半導体素子搭載用リードフレーム
CN102468396B (zh) * 2010-11-05 2014-08-27 展晶科技(深圳)有限公司 发光二极管封装结构
JP2012114286A (ja) * 2010-11-25 2012-06-14 Toshiba Corp Ｌｅｄパッケージ
WO2012117974A1 (ja) * 2011-02-28 2012-09-07 日亜化学工業株式会社 発光装置
JP2012234955A (ja) 2011-04-28 2012-11-29 Toshiba Corp Ｌｅｄパッケージ及びその製造方法
JP5720496B2 (ja) * 2011-08-24 2015-05-20 豊田合成株式会社 発光装置及びその製造方法
DE102011056700A1 (de) * 2011-12-20 2013-06-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen, Leiterrahmenverbund und optoelektronisches Halbleiterbauteil
JP6209826B2 (ja) 2013-02-22 2017-10-11 大日本印刷株式会社 リードフレーム、樹脂付きリードフレーム、リードフレームの多面付け体、樹脂付きリードフレームの多面付け体、光半導体装置、光半導体装置の多面付け体
JP6291713B2 (ja) * 2013-03-14 2018-03-14 日亜化学工業株式会社 発光素子実装用基体及びそれを備える発光装置、並びにリードフレーム
JP6052734B2 (ja) * 2013-03-18 2016-12-27 Ｓｈマテリアル株式会社 半導体素子搭載用リードフレーム及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI828262B (zh) * 2017-08-31 2024-01-01 日商日亞化學工業股份有限公司 導線架、發光裝置用封裝、發光裝置及發光裝置之製造方法
TWI827546B (zh) * 2017-08-31 2024-01-01 日商日亞化學工業股份有限公司 導線架、發光裝置用封裝、發光裝置及發光裝置之製造方法

Also Published As

Publication number Publication date
US10374136B2 (en) 2019-08-06
CN107104177A (zh) 2017-08-29
US20140264426A1 (en) 2014-09-18
TW201626605A (zh) 2016-07-16
US9117806B2 (en) 2015-08-25
JP6291713B2 (ja) 2018-03-14
TWI610466B (zh) 2018-01-01
US20160155917A1 (en) 2016-06-02
EP2779257B1 (en) 2017-02-01
US20150318458A1 (en) 2015-11-05
TW201705541A (zh) 2017-02-01
TWI539628B (zh) 2016-06-21
EP2779257A2 (en) 2014-09-17
TWI645581B (zh) 2018-12-21
US9583688B2 (en) 2017-02-28
US20170125655A1 (en) 2017-05-04
EP2779257A3 (en) 2014-10-08
US10115876B2 (en) 2018-10-30
TW201820660A (zh) 2018-06-01
US20190027667A1 (en) 2019-01-24
CN107104177B (zh) 2019-12-13
EP3190635A1 (en) 2017-07-12
KR20140113427A (ko) 2014-09-24
CN104051593A (zh) 2014-09-17
JP2014179458A (ja) 2014-09-25
CN104051593B (zh) 2017-04-12
TWI568033B (zh) 2017-01-21
US9287480B2 (en) 2016-03-15
KR102122479B1 (ko) 2020-06-12

Similar Documents

Publication Publication Date Title
TWI539628B (zh) 發光元件安裝用基體及具備其之發光裝置、及導線架
TWI540770B (zh) 發光裝置用封裝及具備其之發光裝置、與具備該發光裝置之照明裝置
TWI616003B (zh) 發光裝置用封裝及用其之發光裝置
JP6532200B2 (ja) パッケージ及びそれを用いた発光装置
JP2014093323A (ja) 発光装置用パッケージ及びそれを用いた発光装置
JP6544410B2 (ja) 発光素子実装用基体及びそれを備える発光装置
JP6669217B2 (ja) パッケージ及びそれを用いた発光装置
JP6610703B2 (ja) 発光装置用パッケージ
JP6414609B2 (ja) 発光装置用パッケージ及びそれを備える発光装置、並びにその発光装置を備える照明装置