CN104051593B - 发光元件安装用基体和具备其的发光装置以及引线框 - Google Patents
发光元件安装用基体和具备其的发光装置以及引线框 Download PDFInfo
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- CN104051593B CN104051593B CN201410095349.8A CN201410095349A CN104051593B CN 104051593 B CN104051593 B CN 104051593B CN 201410095349 A CN201410095349 A CN 201410095349A CN 104051593 B CN104051593 B CN 104051593B
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Classifications
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L23/49517—Additional leads
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L23/49541—Geometry of the lead-frame
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- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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Abstract
本发明提供一种发光元件安装用基体,其特征在于,其具备在截面视图,具有第1主面、与所述第1主面相反侧的第2主面、和包含连接于所述第1主面的第1凹面区域和连接于所述第2主面的第2凹面区域的一端面的引线电极、使所述第1主面的至少一部分和所述第2主面的至少一部分露出,覆盖所述一端面的至少一部分,与所述引线电极成形为一体的树脂成形体,所述第2凹面区域包含距所述第1主面最近的最接近部和在所述最接近部更外侧且向所述第2主面侧延伸的延伸部,所述第1凹面区域被设置于所述第2凹面区域的所述最接近部的更外侧。
Description
技术领域
本发明涉及发光元件安装用基体和具备其的发光装置以及引线框。
背景技术
例如在日本特开2012-039109号公报中,记载了如下的半导体装置,其具有:从正反两面在金属基板进行蚀刻而制造的引线框、承载于引线框的LED(发光二极管)元件、具有包围LED元件的凹部且一体成形于引线框的外侧树脂部和填充于凹部内的密封树脂部。
但是,在日本特开2012-039109号公报中所述的半导体装置中,存在通过引线框和外侧树脂部之间的微细的间隙,密封树脂部的成分在背面侧漏出、焊料助焊剂浸入凹部内的情况。
因此,本发明是鉴于上述情况而完成的,目的在于提供易于防止密封树脂成分的漏出、焊料助焊剂的浸入的发光元件安装用基体或具备其的发光装置或引线框。
发明内容
为了解决上述课题,本发明的发光元件安装用基体的特征在于,其具备一对正负的引线电极和树脂成形体,所述一对正负的引线电极在截面视图中,具有第1主面、与所述第1主面相反侧的第2主面、和包含连接于所述第1主面的第1凹面区域和连接于所述第2主面的第2凹面区域的一端面,所述树脂成形体使所述第1主面的至少一部分和所述第2主面的至少一部分露出,覆盖所述一端面的至少一部分,与所述引线电极成形为一体,所述树脂成形体形成用于收容发光元件的凹部,所述第2凹面区域包含距所述第1主面最近的最接近部和在所述最接近部更外侧且向所述第2主面侧延伸的延伸部,所述延伸部至少设置于所述一对正负的引线电极相对置的端面,所述第1凹面区域被设置于所述第2凹面区域的所述最接近部更外侧。
另外,本发明的发光装置的特征在于,具备上述的发光元件安装用基体和安装于该发光元件安装用基体的发光元件。
另外,本发明的引线框的特征在于,其是具有悬置引线部和在所述悬置引线部保持的多个单一基体区域的板状引线框,所述单一基体区域在截面视图中,具有第1主面、与所述第1主面相反侧的第2主面、和包含连接于所述第1主面的第1凹面区域和连接于所述第2主面的第2凹面区域的一端面,所述第2凹面区域包含距所述第1主面最近的最接近部和在所述最接近部更外侧且向所述第2主面侧延伸的延伸部,所述延伸部至少设置于在所述单一区域进行对置的引线框的端面,所述第1凹面区域被设置于所述第2凹面区域的所述最接近部更外侧。
根据本发明,能够较高地保持引线电极或引线框的单一基体区域的边缘部的强度,并且能够抑制密封树脂成分的漏出、焊料助焊剂的浸入。
以下通过结合附图,对本发明的上述和以下的对象及其特征进行详细说明,使其更加清楚。
附图说明
图1A是本发明的一种实施方式的发光装置的示意俯视图,图1B是图1A的A-A截面的示意截面图,图1C是图1A的B-B截面的示意截面图。
图2A是本发明的一种实施方式的发光元件安装用基体的示意俯视图,图2B是示意仰视图,图2C是侧面示意图。
图3A是本发明的一种实施方式的引线框的一部分的示意俯视图,图3B是图3A的C-C截面的示意截面图。
图4是放大表示本发明的另一种实施方式的发光装置的一部分的示意截面图。
具体实施方式
下面,参照适当附图对本发明的实施方式进行说明。但是,在以下说明的发光装置、发光元件安装用基体和引线框是用于将本发明的技术思想具体化的例子,只要没有特别的描述,本发明并不限定于以下例子。另外,在一种实施方式、实施例中说明的内容也能够适用于其它的实施方式、实施例。此外,为了更明确地说明,各附图所示的构件的大小、位置关系等存在夸张。
此外,以下图中所示的“x”方向为“横”方向,“y”方向为“纵”方向,“z”方向为“上下”方向或“厚度(高度)”方向。另外,以下所示的实施方式和实施例的发光装置、发光元件安装用基体和引线框,在俯视中,横方向为较长方向,纵方向为较短方向,但并不限定于此,例如俯视也可以呈大致正方形。
<实施方式1>
图1A是实施方式1的发光装置的示意俯视图,图1B、1C分别是表示图1A中A-A截面、B-B截面的示意截面图。另外,图2A、2B、2C分别是实施方式1的发光元件安装用基体的示意俯视图、示意仰视图、侧面示意图。
如图1A~C所示,实施方式1的发光装置100具备发光元件安装用基体200和安装于该发光元件安装用基体200的发光元件30。更具体地,发光装置100主要是由在发光元件安装用基体200上安装发光元件30,并通过密封构件60密封而构成的。此外,虽然本例的密封构件60含有荧光体70,但也可以省略。
如图1A~C、图2A~C所示,发光元件安装用基体200具备引线电极10、11和使引线电极10、11成形为一体的树脂成形体20。以下,存在将左侧的引线电极10作为第1引线电极,右侧的引线电极11作为第2引线电极的情况。在本例中引线电极具有2个,但也可以为1个,也可以为3个以上。引线电极10、11在发光元件安装用基体200的横方向上排列。引线电极10、11为板状,没有实际地进行弯曲加工。在横方向上,第1引线电极10比第2引线电极11长。第1和第2引线电极10的纵方向的长度(宽度)大致相同。第1引线电极10具有第1主面10a、与第1主面10a相反侧的第2主面10b、和连接第1主面10a和第2主面10b的端面。在图示的例子中,引线电极10、11的第1主面10a为上面,第2主面10b为下面。对于引线电极10、11而言,在使它们相互分隔的分隔区域填入树脂成形体20,该分隔区域作为电绝缘区域,一体化地保持于树脂成形体20中。第2引线电极11也同样具有第1主面、第2主面和端面,可以说与第1引线电极11实质上相同,因此没有特别标注符号而省略说明。
此外,引线电极的第1主面10a和第2主面10b除了有意地形成的沟、凹部,优选为平坦面。另外,引线电极的第1主面10a和第2主面10b除了有意地形成的沟、凹部,优选大致平行。还有,第1和第2引线电极10、11的最大宽度(主要是纵方向的最大宽度)可以不同,但优选最大宽度大致相同。第1和第2引线电极10、11在俯视中可以按相互倾斜关系配置,但优选大致平行地配置。第1和第2引线电极10、11在俯视中可以按与横方向平行的中心轴在纵方向上相互位移的关系配置,但优选在俯视中按与横方向平行的中心轴以几乎一致的方式配置。
树脂成形体20,在俯视中,具有沿横方向长的长方形状。树脂成形体20与引线电极10、11一同形成收纳发光元件的凹部。具体地,凹部的底面由引线电极10、11的上面和树脂成形体20的表面构成。凹部的侧壁面25(凹部侧壁的内面)由树脂成形体20的表面构成。凹部的侧壁面25可以是垂直的,但为了效率良好地输出从发光元件发射的光,优选开口以随着接近凹部底面而宽度变狭的方式倾斜。此外,在本例中,例举了具有凹部的发光元件安装用基体,但凹部也可以省略,可以制成例如平板状的发光元件安装用基体。
另外,就树脂成形体20而言,使引线电极的第1主面10a的至少一部分和第2主面10b的至少一部分露出,覆盖端面的至少一部分。特别是在本例中,树脂成形体20除悬置引线部(310)以外,覆盖引线电极10、11的端面的几乎全域。另外,树脂成形体20覆盖引线电极的第1主面10a的一部分(特别是其边缘部)。还有,就引线电极的第2主面10b而言,其至少一部分从树脂成形体20露出,与树脂成形体20一同构成发光元件安装用基体200的下面。由此,能够制成散热性优异的发光元件安装用基体。
并且,引线电极的端面具有连接于第1主面10a的第1凹面区域10ca和连接于第2主面10b的第2凹面区域10cb。另外,第2凹面区域10cb包含距第1主面10a最近的最接近部P和在最接近部P更外侧且向第2主面10b侧延伸的延伸部10cbe。第1凹面区域10ca被设置于第2凹面区域的最接近部P更外侧。此外,所谓的引线电极的“外侧”、“内侧”是以作为考虑对象的引线电极的中心为基准来考虑的。
如此地构成的发光元件安装用基体200和具备其的发光装置100,利用第1凹面区域10ca和第2凹面区域10cb,使引线电极10、11的端面的表面积(换言之,使截面视图中的端面的全长)增大,能够抑制密封树脂成分的漏出、焊料助焊剂的浸入。另外,能够提高引线电极10、11的边缘部和树脂成形体20的密合性。特别是第2凹面区域的延伸部10cbe作为抑制密封树脂成分的漏出、焊料助焊剂的浸入的屏障发挥功能,能够有效地抑制密封树脂成分的漏出、焊料助焊剂的浸入。另外,虽然引线电极10、11在第2凹面区域的最接近部P容易变得薄壁,但是通过第1凹面区域10ca处于最接近部P更外侧,能够较高地维持引线电极的较薄的边缘部的强度。
此外,这样的引线电极10、11的端面形状能够在通过蚀刻加工引线框时,由掩模的特征、形状、位置关系等形成。另外,优选第1凹面区域10ca和第2凹面区域10cb由大致相同的曲面构成,也可以由平坦面、曲面的组合构成,还可以具有凹凸。
以下,对发光装置100和发光元件安装用基体200的优选方式进行说明。
如图1A~C所示,优选就引线电极的端面而言,在第1凹面区域10ca和第2凹面区域10cb之间包含中间区域10cc。由此,使引线电极的端面的表面积,换言之,使截面视图中的端面的全长进一步增大,容易抑制密封树脂成分的漏出、焊料助焊剂的浸入。另外,容易维持第1凹面区域10ca和第2凹面区域10cb之间的壁厚为较大值,较高地维持引线电极的较薄的边缘部的强度。在图示的例子中,中间区域10cc连接设置于第1凹面区域10ca和第2凹面区域10cb。
如图1A~C所示,优选中间区域10cc大致平坦。由此,从第1凹面区域10ca向中间区域10cc的连接部和/或从第2凹面区域10cb向中间区域10cc的连接部容易设置为弯曲的形状,容易抑制密封树脂成分的漏出、焊料助焊剂的浸入。
如图1A~C所示,优选第2凹面区域10cb的表面积比第1凹面区域10ca的表面积大。换言之,优选在截面视图,第2凹面区域10cb的长度比第1凹面区域10ca的长度大。由此,第2凹面区域的延伸部10cbe的表面积容易被设置的大,因此容易抑制密封树脂成分的漏出、焊料助焊剂的浸入。另外,覆盖第2凹面区域10cb的树脂成形体20容易设置为厚壁,因此能够从第2主面10b侧强力支撑引线电极10、11。
如图1A~C所示,优选引线电极的第1主面10a侧为发光元件安装侧。若引线电极的第1主面10a侧为发光元件安装侧,则第2凹面区域的延伸部10cbe以面对第2主面10b侧的方式被设置。由此,在发光元件安装侧,容易高精度地形成覆盖引线电极10、11的端面的树脂成形体20。由此,进而容易抑制密封树脂成分的漏出、焊料助焊剂的浸入。
就第1凹面区域10ca而言,可以按超过第2凹面区域10cb的最接近部P而朝着更接近第2主面10b侧的方向设置,但优选如图1A~C所示,按比第2凹面区域10cb的最接近部P朝着更接近第1主面10a侧的方向设置。换言之,优选第1凹面区域10ca的外侧的端部比第2凹面区域10cb的最接近部P更接近第1主面10a侧。由此,容易较大地维持第1凹面区域10ca和第2凹面区域10cb之间的壁厚,容易较高地维持引线电极的壁厚较薄的边缘部的强度。此外,第1凹面区域10ca也可以具有距第2主面10b最近的最接近部(作为第2最接近部)和在该第2最接近部更外侧且向第1主面10a侧延伸的延伸部(作为第2延伸部)。由此,能够有效地抑制密封树脂成分的漏出、焊料助焊剂的浸入。
若如上的引线电极10、11的端面形状形成于除引线电极的悬置引线部(310)以外的边缘的一部分,则具有抑制密封树脂成分的漏出、焊料助焊剂的浸入的效果。另外,引线电极10、11的如上的端面形状形成于除引线电极的悬置引线部(310)以外的边缘部的几乎全域(图2A,2B的划斜线的部分)的方式,由于更容易进一步抑制密封树脂成分的漏出、焊料助焊剂的浸入而优选。此外,对悬置引线部也能够实施与这样的引线电极10、11的端面形状相同的加工。
图3A是实施方式1的引线框的一部分的示意俯视图,图3B是表示图3A中的C-C截面的示意截面图。如图3A所示,引线框300为板状,具有悬置引线部310和保持于悬置引线部310的多个单一基体区域350。单一基体区域350具有第1主面351a、与第1主面351a相反侧的第2主面351b和连接第1主面351a和第2主面351b的端面。单一基体区域350的端面具有连接于第1主面351a的第1凹面区域351ca和连接于第2主面351b的第2凹面区域351cb。第2凹面区域351cb包含距第1主面351a最近的最接近部Q和向最接近部Q更外侧延伸的延伸部351cbe。并且,第1凹面区域351ca设置于比第2凹面区域的最接近部Q更外侧。
如图3A、图3B所示,单一基体区域350包含相当于发光元件安装用基体200中的第1和第2引线电极10、11的2个岛状区域。该单一基体区域350中的第1主面351a、第2主面351b、第1凹面区域351ca、第2凹面区域351cb、中间区域351cc、最接近部Q、延伸部351cbe分别相当于第1和第2引线电极中的第1主面10a、第2主面10b、第1凹面区域10ca、第2凹面区域10cb、中间区域10cc、最接近部P、延伸部10cbe,其优选方式也与上述的引线电极相同。
此外,悬置引线部310是在单片化的发光元件安装用基体的端面(侧面)中,其一部分从树脂成形体露出并残存而成的。从外部对发光元件安装用基体施加应力时,应力容易集中于悬置引线部的周边。如图2A、2B、2C所示,在发光元件安装用基体200中,悬置引线部(310)无论横方向、纵方向,均位于基体的俯视中的大致中央。由此,能够提高对于发光元件安装用基体200的外部应力的耐性,抑制树脂成形体20的裂纹开裂、发生缺损。特别是在本例中,第1引线电极10具有沿纵方向设置的悬置引线部(310)。第2引线电极11不具有沿纵方向设置的悬置引线部。第1和第2引线电极10、11均在横方向(外侧)具有悬置引线部(310)。
<实施方式2>
图4是放大表示实施方式2的发光装置的一部分的示意截面图。图4所示的例子的发光装置中,引线电极中的相对于第1和第2凹面区域的主面的配置关系、引线电极和树脂成形体的关系与实施方式1的发光装置不同,对于除此以外的构成实质上相同,因此适当省略说明。
图4所示的例子的发光装置也同样,引线电极的端面具有连接于第1主面10a的第1凹面区域10ca和连接于第2主面10b的第2凹面区域10cb。另外,第2凹面区域10cb包含距第1主面10a最近的最接近部R和在最接近部R更外侧且向第2主面10b侧延伸的延伸部10cbe。并且,第1凹面区域10ca设置于第2凹面区域的最接近部R更外侧。
如图4所示,在本例中,与实施方式1相反,引线电极的第2主面10b侧为发光元件安装侧。在此情况下,容易使第1主面10a的露出区域的面积增大,容易提高发光元件安装用基体的散热性。
如图4所示,在本例中,发光元件安装侧的凹面区域即第2凹面区域10cb的一部分,除朝向第1和第2引线电极的分隔区域的部分以外,位于凹部侧壁面25更内侧。如此一来,通过发光元件安装侧的凹面区域的一部分或全部位于凹部侧壁面25更内侧,能够抑制或回避在树脂成形体的凹部侧壁面25的与引线电极10、11的接触部发生毛刺。此外,另一方面,在实施方式1中,树脂成形体的凹部侧壁除朝向第1和第2引线电极10、11的分隔区域的部分以外,覆盖着引线电极的第1主面10a(发光元件安装侧)的边缘部。由此,引线电极10、11的边缘部的被树脂成形体20覆盖的面积比较大,容易抑制密封树脂成分的漏出、焊料助焊剂的浸入。
下面,对本发明的发光装置、发光元件安装用基体和引线框的各构成要素进行说明。
(引线电极10、11,引线框300)
引线电极和引线框可以使用与发光元件、保护元件连接的能导电的金属构件。具体可以列举对铜、铝、金、银、钨、铁、镍、钴、钼或这些的合金、磷青铜和含铁铜合金等金属板实施冲压、蚀刻、压延等各种加工的产物。特别是优选铜为主要成分的铜合金。另外,引线电极和引线框的基材可以由单层构成,也可以由包含多个金属层的多层构成。单层构成简便且良好。还有,在引线电极和引线框的表层可以设置银、铝、铑、金、铜或这些的合金等镀敷、光反射膜,其中优选光反射性最优的银。引线电极和引线框的厚度可以任意地选择,例如0.1mm以上且1mm以下,优选0.2mm以上且0.4mm以下。
(树脂成形体20)
树脂成形体的基材可以列举环氧树脂、环氧改性树脂、有机硅树脂、硅改性树脂、聚双马来酰亚胺三嗪树脂、聚酰亚胺树脂、聚氨酯树脂等热固化性树脂,脂肪族聚酰胺树脂、半芳香族聚酰胺树脂、聚对苯二甲酸乙二醇酯、聚对苯二甲酸1,4-环己烷二甲醇酯、液晶聚合物、聚碳酸酯树脂、间规聚苯乙烯、聚苯醚、聚苯硫醚、聚醚砜树脂、聚醚酮树脂、聚芳酯树脂等热塑性树脂。另外,在这些基材中,作为填充剂或着色颜料,可以混入玻璃、二氧化硅、二氧化钛、氧化镁、碳酸镁、氢氧化镁、碳酸钙、氢氧化钙、硅酸钙、硅酸镁、硅灰石、云母、氧化锌、钛酸钡、钛酸钾、硼酸铝、氧化铝、氧化锌、碳化硅、氧化锑、锡酸锌、硼酸锌、氧化铁、氧化铬、氧化锰、炭黑等微粒或纤维。
(发光元件30)
发光元件可以使用发光二极管(Light Emitting Diode:LED)元件、半导体激光器(Laser Diode:LD)元件等半导体发光元件。发光元件只要是由各种半导体构成的元件结构中设置有一对正负电极的元件即可。特别是,优选能够效率良好地激发荧光体的氮化物半导体(InxAlyGa1-x-yN,0≤x,0≤y,x+y≤1)的发光元件。除此以外,也可以是发出绿色~红色范围的光的砷化镓类、磷化镓类半导体的发光元件。为一对正负电极设置在同一面侧的发光元件的情况下,用导线将各电极与引线电极连接并使其面朝上安装。一对正负电极分别设置在相互相对的面的对向电极结构的发光元件的情况下,下面电极用导电性粘接剂粘接引线电极,上面电极用导线与引线电极连接。后述的保护元件的安装方式也相同。另外,通过在发光元件的安装面侧设置银、铝等金属层、电介质反射膜,能够提高光的输出效率。1个发光元件安装用基体搭载的发光元件的个数可以是一个或者多个,其大小、形状、发光波长也任意选择即可。多个发光元件可以通过引线电极、导线串联或并联连接。另外,在1个发光元件安装用基体中,也可以搭载例如蓝色发光和红色发光的2个,蓝色发光和绿色发光的2个,蓝色·绿色·红色发光的3个等组合的发光元件。
(粘接剂40)
粘接剂是将发光元件、保护元件粘接于发光元件安装用基体的构件。绝缘性粘接剂可以使用环氧树脂、有机硅树脂、聚酰亚胺树脂、或这些的改性树脂、混合树脂等。作为导电性粘接剂可以使用银、金、钯等的导电性糊剂,锡-铋系、锡-铜系、锡-银系、金-锡系等焊料,低熔点金属等钎焊材料。
(导线50)
导线是将发光元件的电极或保护元件的电极和引线电极连接的导线。具体地可以使用金、铜、银、铂、铝或这些合金的金属线。特别是优选难以发生因来自密封构件的应力而导致的断裂,热阻等优异的金线。另外,为了提高光反射性,可以是至少表面由银构成的金属线。
(密封构件60)
密封构件是将发光元件、保护元件、导线等密封,从灰尘、水分、外力中保护的构件。密封构件的基材只要具有电绝缘性、能够从发光元件透过发射的光(优选透过率70%以上)即可。具体可以列举有机硅树脂、环氧树脂、酚醛树脂、聚碳酸酯树脂、丙烯酸树脂、TPX树脂、聚降冰片烯树脂、这些的改性树脂或包含这些树脂一种以上的混合树脂。也可以是玻璃。其中,有机硅树脂由于耐热性、耐光性优异,固化后的体积收缩小而优选。另外,就密封构件而言,也可以在其基材中添加填充剂、荧光体等具有各种功能的微粒。填充剂可以使用扩散剂、着色剂等。具体可以列举二氧化硅、氧化钛、氧化镁、碳酸镁、氢氧化镁、碳酸钙、氢氧化钙、硅酸钙、氧化锌、钛酸钡、氧化铝、氧化铁、氧化铬、氧化锰、玻璃和炭黑等。填充剂的微粒的形状可以破碎状,也可以是球状。另外,也可以是中空或多孔质的。
(荧光体70)
荧光体吸收由发光元件发射的一次光的至少一部分,发射与一次光不同波长的二次光。荧光体例如是主要由铕、铈等镧系元素赋活的氮化物系荧光体·氮氧化物系荧光体。更具体地可以列举由铕赋活的α或β塞隆(Sialon)型荧光体、各种碱土金属氮化硅酸盐荧光体、主要由铕等的镧系元素、锰等过渡金属系元素赋活的碱土金属卤素磷灰石荧光体、碱土类的卤硅酸盐荧光体、碱土金属硅酸盐荧光体、碱土金属硼酸卤化物荧光体、碱土金属铝酸盐荧光体、碱土金属硅酸盐、碱土金属硫化物、碱土金属硫代酸盐、碱土金属氮化硅、锗酸盐、主要由铈等镧系元素赋活的稀土铝酸盐、稀土硅酸盐或主要由铕等镧系元素激活的有机物和有机络合物等。另外,可以使用上述以外的具有相同性能、效果的荧光体。由此,能够制成发射可见波长的一次光和二次光的混色光(例如白色系)的发光装置、由紫外光的一次光激发而发射可见波长的二次光的发光装置。此外,荧光体可以在发光元件安装用基体的凹部底面侧沉积,也可以在凹部内分散。
(保护元件80)
保护元件是用于保护发光元件免受静电、高电压冲击的元件。具体可以列举齐纳二极管(稳压二极管)。为了抑制光吸收,保护元件可以通过白色树脂等光反射构件覆盖。
实施例
下面,对本发明的实施例进行详述。此外,本发明并非仅限定于以下所示的实施例。
<实施例1>
实施例1的发光装置具有图1A~C所示的例子的发光装置100的结构,是顶面式的SMD型LED。发光装置的外形大致呈长方体。发光装置具备作为发光装置用封装的发光元件安装用基体。发光元件安装用基体是尺寸为横3.0mm、纵1.0mm、厚度0.52mm,在构成正极·负极的第1和第2的引线电极上树脂成形体成形为一体而构成。该发光元件安装用基体通过如下方法制造:在模具内设置引线框,注入具有流动性的状态的树脂成形体的构成材料并固化,脱模后,对各基体进行分离(单片化),其中所述引线框是用悬置引线部保持矩阵状配置的多个单一基体区域(多组的引线电极)而成的加工金属板。此外,实际中发光元件安装用基体的分离在发光元件等的安装工程和密封工程之后进行。
第1和第2的引线电极分别是在表面实施了银镀敷的、最大厚度0.2mm的铜合金的板状小片。第1引线电极作为主体,形成横1.65mm、纵0.67mm的俯视为矩形(除悬置引线部,带有圆角)的形状。第2的引线电极形成为横0.53mm、纵0.67mm的俯视为矩形(除悬置引线部,带有圆角)的形状。第1引线电极和第2的引线电极之间的分隔区域的宽度为0.3mm。并且,第1和第2的引线电极分别在其端面设置有连接于上面的第1凹面区域、连接于下面的第2凹面区域和连接第1凹面区域和第2凹面区域的中间区域。第1凹面区域是宽度0.035mm、最大深度0.1mm的曲面状区域。第2凹面区域是宽度0.135mm、最大深度0.1mm的曲面状区域。具有在距第2凹面区域的上面最近的最接近部(最大深度的位置)更外侧且向下面侧延伸的延伸部。中间区域是宽度0.02mm左右的大致平坦的区域。第1凹面区域(与第1主面的的边界)位于第2凹面区域的最接近部更外侧0.05mm。这样的端面形状设置于除悬置引线部以外的各引线电极的边缘部全域。另外,这样的端面形状是通过蚀刻形成的。第1和第2的引线电极的下面的各露出区域与树脂成形体的下面实质上是同一面,构成发光装置即发光元件安装用基体的下面。另外,第1和第2的引线电极的下面的露出区域大致呈矩形(带有圆角)。
树脂成形体是俯视的外形为横3.0mm、纵1.0mm的长方形,最大厚度为0.52mm,含有氧化钛的环氧树脂制成形体。在树脂成形体的上面侧的大致中央形成横2.6mm、纵0.6mm、深度0.32mm的俯视的长方形(带有圆角)的凹部。凹部的侧壁面的倾斜角度相对于凹部底面为约5°。树脂成形体覆盖各引线电极的上面的边缘部和除悬置引线部以外的端面。
在构成发光元件安装用基体的凹部底面的第1引线电极的上面,用有机硅树脂粘接剂粘接一个发光元件。该发光元件是在蓝宝石基板上依次层叠氮化物半导体的n型层、活性层、p型层而成的,能够发出蓝色(中心波长约460nm)的光,横700μm、纵300μm、厚度150μm的LED元件。另外,发光元件中,p、n电极的一端用导线连接第1引线电极,p、n电极的另一端用导线连接第2引线电极的上面。导线是线径25μm的金线。此外,在第2引线电极的上面安装有纵155μm、横155μm、厚度85μm的对向电极结构的齐纳二极管即保护元件。该保护元件由银糊剂粘接剂粘接,其上面电极与第1引线电极的上面用导线连接。
在收纳有发光元件和保护元件的发光元件安装用基体的凹部,填充密封构件覆盖各元件。密封构件以有机硅树脂为基材,其中含有用铈赋活的钇铝石榴石(YAG:Ce)荧光体和二氧化硅填充剂。密封构件的上面与树脂成形体的凹部侧壁的上面是大致同一面,成为几乎平坦面。该密封构件是在具有流动性的状态下,使用分配器填充于发光元件安装用基体的凹部内,通过加热等固化而形成的。
如上而构成的实施例1的发光装置能够发挥与实施方式1的发光装置100相同的效果。
本发明的发光元件安装用基体或引线框可以利用于SMD型LED的封装、安装基板。另外,使用本发明的发光元件安装用基体或引线框的发光装置可以用于液晶显示器的背光源、各种照明器具、大型显示屏、广告、指路牌等各种显示装置、以及数码摄像机、传真机、复印机、扫描仪等总的图像读取装置、投影装置。
对于本领域中的普通技术人员以下内容是显而易见的:虽然本发明的各优选实施例已经举出并描述,但可以认为本发明并不限定于所公开的具体实施例,其被视为仅仅是说明本发明的概念的,并不应被解释为限制本发明的范围,并且在本发明所述的要求所限定的范围内所有的改进和改变均可适用。本申请援引申请于2013年3月14日的日本国专利申请2013-052297,其内容并入本文作为参考。
符号说明
10、11…引线电极(10a…第1主面,10b…第2主面,10ca…端面的第1凹面区域,10cb…端面的第2凹面区域,10cc…端面的中间区域,10cbe…延伸部,P、R…最接近部)
20…树脂成形体(25…凹部侧壁面)
30…发光元件
40…粘接剂
50…导线
60…密封构件
70…荧光体
80…保护元件
100…发光装置
200…发光元件安装用基体
300…引线框(310…悬置引线部,350…单一基体区域(351a…第1主面,351b…第2主面,351ca…端面的第1凹面区域,351cb…端面的第2凹面区域,351cc…端面的中间区域,351cbe…延伸部,Q…最接近部))。
Claims (11)
1.一种发光元件安装用基体,其具备:
一对正负的引线电极,其在截面视图,具有第1主面、与所述第1主面相反侧的第2主面、和包含连接于所述第1主面的第1凹面区域和连接于所述第2主面的第2凹面区域的一端面;以及
树脂成形体,其使所述第1主面的至少一部分和所述第2主面的至少一部分露出,覆盖所述一端面的至少一部分,且与所述引线电极成形为一体,
其中,所述树脂成形体形成用于收容发光元件的凹部,
所述第2凹面区域包含距所述第1主面最近的最接近部、和较所述最接近部而位于外侧且向所述第2主面侧延伸的延伸部,
所述延伸部至少设置于所述一对正负的引线电极相对置的端面上,
所述第1凹面区域在所述第2凹面区域的所述最接近部的外侧,从所述第1主面的端部向外侧设置,使得所述引线电极的所述一端面的全长增大。
2.根据权利要求1所述的发光元件安装用基体,其中,所述引线电极的所述一端面在所述第1凹面区域和所述第2凹面区域之间包含中间区域。
3.根据权利要求2所述的发光元件安装用基体,其中,所述中间区域大致平坦。
4.根据权利要求1所述的发光元件安装用基体,其中,所述第2凹面区域的面积比所述第1凹面区域的面积大。
5.根据权利要求1所述的发光元件安装用基体,其中,所述引线电极的所述第1主面侧为发光元件安装侧。
6.一种发光装置,其具备权利要求1所述的发光元件安装用基体和安装于所述发光元件安装用基体的发光元件。
7.一种引线框,其具备悬置引线部;和被所述悬置引线部所保持的多个单一基体区域,
其中,所述引线框具有板状形状,
所述单一基体区域在截面视图中,具有第1主面、与所述第1主面相反侧的第2主面、和包含连接于所述第1主面的第1凹面区域和连接于所述第2主面的第2凹面区域的一端面,
所述第2凹面区域包含距所述第1主面最近的最接近部、和较所述最接近部而位于外侧且向所述第2主面侧延伸的延伸部,
所述延伸部至少设置于在所述单一基体区域进行对置的引线框的端面上,
所述第1凹面区域在所述第2凹面区域的所述最接近部的外侧,从所述第1主面的端部向外侧设置,使得所述单一基体区域的所述一端面的全长增大。
8.根据权利要求7所述的引线框,其中,所述一端面在所述第1凹面区域和所述第2凹面区域之间包含中间区域。
9.根据权利要求8所述的引线框,其中,所述中间区域大致平坦。
10.根据权利要求7所述的引线框,其中,所述第2凹面区域的表面积比所述第1凹面区域的表面积大。
11.根据权利要求7所述的引线框,其中,所述第1主面侧为发光元件安装侧。
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EP2779257B1 (en) | 2017-02-01 |
JP2014179458A (ja) | 2014-09-25 |
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TW201448282A (zh) | 2014-12-16 |
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TWI539628B (zh) | 2016-06-21 |
US20150318458A1 (en) | 2015-11-05 |
CN107104177B (zh) | 2019-12-13 |
US20190027667A1 (en) | 2019-01-24 |
EP3190635A1 (en) | 2017-07-12 |
TW201820660A (zh) | 2018-06-01 |
KR20140113427A (ko) | 2014-09-24 |
TWI568033B (zh) | 2017-01-21 |
US9287480B2 (en) | 2016-03-15 |
US10374136B2 (en) | 2019-08-06 |
US10115876B2 (en) | 2018-10-30 |
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