WO2024008513A1 - Component having anchoring structure and method for producing a component having anchoring structure - Google Patents

Component having anchoring structure and method for producing a component having anchoring structure Download PDF

Info

Publication number
WO2024008513A1
WO2024008513A1 PCT/EP2023/067450 EP2023067450W WO2024008513A1 WO 2024008513 A1 WO2024008513 A1 WO 2024008513A1 EP 2023067450 W EP2023067450 W EP 2023067450W WO 2024008513 A1 WO2024008513 A1 WO 2024008513A1
Authority
WO
WIPO (PCT)
Prior art keywords
carrier
housing body
component
metal rods
subregion
Prior art date
Application number
PCT/EP2023/067450
Other languages
French (fr)
Inventor
Michael Zitzlsperger
Klaus Reingruber
Andreas PLÖSSL
Gunnar Petersen
Simon Jerebic
Tobias Gebuhr
Original Assignee
Ams-Osram Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams-Osram Ag filed Critical Ams-Osram Ag
Publication of WO2024008513A1 publication Critical patent/WO2024008513A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • a component having an anchoring structure is speci fied . Moreover, a method for producing a component having an anchoring structure or a plurality of such components is provided .
  • a conventional component which includes a carrier and a housing body formed on the carrier may exhibit inadequate mechanical stability due to poor mechanical connection or poor adhesion between the housing body and the carrier .
  • One obj ect is to provide a component having an anchoring structure which is configured to enhance a mechanical connection between a carrier and a housing body of the component , resulting in an improved mechanical stability of the component .
  • Another obj ect is to provide a simpli fied but ef ficient method for producing such a component or a plurality of such components .
  • a component it comprises a carrier and a housing body .
  • the carrier comprises an electrically conductive surface .
  • the housing body is electrically insulating and is mechanically fixed to the electrically conductive surface of the carrier .
  • a mechanical connection between the carrier and the housing body is enhanced by an anchoring structure .
  • the anchoring structure comprises metal rods penetrating into the housing body, wherein the metal rods are nano-rods and/or micro-rods and are distributed meadow-like in places on the electrically conductive surface of the carrier .
  • the electrically conductive surface can be a top surface of a main body of the carrier, for example of a lead- frame or of an insulating substrate having a metalli zation .
  • the metal rods have lateral diameters from 30 nm to 20 pm, for instance from 30 nm to 10 pm, from 30 nm to 5 pm, from 30 nm to 2 pm, from 100 nm to 10 pm, from 300 nm to 10 pm or from 500 nm to 5 pm .
  • the metal rods can have cross-sections of any geometrical forms .
  • the cross-sections are circles , circle-like , elliptical or are of irregular shapes .
  • the metal rods may exhibit a hollow core cross-section or a filled cross-section .
  • the diameters of the metal rods are provided by the largest lateral expansion of the corresponding metal rod .
  • a diameter of a metal rod shall be understood as a maximum lateral extent of a cross-section of the metal rod .
  • the metal rods can be formed from a metal like Cu, Au, Ag, Pt , Ni or Sn .
  • the diameters can be from 30 nm to 1 pm in case of nano-rods , for instance from 30 nm to 900 nm, from 30 nm to 600 nm, from 30 nm to 300 nm, from 30 nm to 100 nm, or from 100 nm to 1 pm, 300 nm to 1 pm, 500 nm to 1 pm or from 600 nm to 1 pm .
  • the diameters can be from 1 pm to 20 pm, from 3 pm to 20 pm, from 5 pm to 20 pm or from 10 pm to 20 pm. It is possible that all metal rods are nano-rods, are micro-rods or a mix of nano-rods and micro-rods.
  • a lateral direction is understood to be a direction parallel to a main extension surface of the carrier, for example parallel to the top surface of the main body of the carrier.
  • a vertical direction is understood to be a direction that is perpendicular to the main extension surface of the carrier and/or to the top surface of the main body of the carrier. The vertical direction and the lateral direction are perpendicular to each other.
  • the metal rods have vertical heights from 2 pm to 100 pm, for example, from 2 pm to 80 pm, from 2 pm to 50 pm, from 2 pm to 20 pm, from 2 pm to 10 pm, from 2 pm to 5 pm, or from 5 pm to 100 pm, from 10 pm to 100 pm, from 20 pm to 100 pm, from 30 pm to 100 pm, from 50 pm to 100 pm, or from 60 pm to 100 pm.
  • all metal rods have roughly the same vertical height.
  • the vertical height of any of the individual metal rods does not differ from an average vertical height of all metal rods by more than 50 %, 30 %, 20 % , 10 %, 5 % or 3 % of the average vertical height.
  • the number metal rods is greater than 10, 20, 30, 50, 100, 300, or greater 1000.
  • lateral distances between neighboring metal rods can be greater or smaller than the average diameter of the metal rods, for instance between 0.1 and 10 times the average diameter, between 0.7 and 7 times the average diameter, between 0.5 and 5 times the average diameter, between 0 . 3 and 3 times the average diameter, or between 0 . 2 and 2 times the average diameter .
  • the housing body is a molded body .
  • a molded body is understood to mean an electrically insulating body which can be formed by an encapsulation process .
  • An encapsulation process is generally understood to mean a process by which a molding compound can be shaped in accordance with a speci fied form and, i f necessary, cured, optionally under the action of temperature or pressure .
  • the term " encapsulation process” includes at least molding, inj ection molding, vacuum inj ection molding, film assisted molding, trans fer molding and compression molding .
  • the housing body may be made of an electrically insulating molding material , for example of a plastic, a castable polymer such as epoxies or silicones .
  • the housing body is formed by compression molding or by film assisted molding .
  • the molding material may contain filler particles , for instance silicon dioxide particles and titan dioxide particles or carbon black .
  • the carrier is a lead- frame made of an electrically conductive material , for instance of Cu or copper alloy .
  • the electrically conductive surface can be a surface of the lead- frame , for instance a top surface of the lead- frame .
  • the lead- frame can comprise a first subregion and a second subregion spaced apart from the first subregion .
  • the first subregion and the second subregion can be laterally surrounded by the housing body and thus are mechanically connected to each other by the housing body .
  • the first subregion and/or the second subregion can extend at least in places through the housing body .
  • the first subregion and the second subregion can be assigned to di f ferent electrical polarities of the component .
  • the first subregion and the second subregion can be configured for electrically contacting the component to an external voltage source .
  • the carrier comprises an insulating substrate . It is possible that the insulating substrate can comprises through-vias and/or current spreading structures .
  • the carrier can further comprise a metalli zation, wherein the electrically conductive surface of the carrier is a surface of the metalli zation .
  • the carrier comprises a ceramic substrate having the metalli zation formed thereon .
  • the metalli zation can be structured and comprise a plurality of subregions which can be spatially separated .
  • the carrier can also be a printed circuit board .
  • the component further comprises a first semiconductor chip .
  • the first semiconductor chip can be arranged on a first subregion of the electrically conductive surface , wherein the first subregion is not covered by the metal rods .
  • the first semiconductor chip is configured to emit electromagnetic radiation . It is possible that the component comprises a plurality of first semiconductor chips .
  • the component can further comprise a second semiconductor chip, wherein the second semiconductor chip is arranged on another region of the electrically conductive surface not being covered by the metal rods .
  • the second semiconductor chip can be electrically connected to the first semiconductor chip in an antiparallel manner .
  • the second semiconductor chip may be a protection diode .
  • the second semiconductor chip can be embedded within the housing body .
  • the first semiconductor chip, for example is not covered by the housing body .
  • the anchoring structure further comprises tie bars .
  • the tie bars are formed as lateral parts of the carrier .
  • the tie bars can have a smallest vertical thickness of the carrier .
  • the tie bars are surrounded by the housing body in such a way that on side surfaces of the component , they are flush with the housing body .
  • the anchoring structure further comprises step-like elements .
  • the step-like elements can be formed by side surfaces of the carrier .
  • the housing body can be anchored to the step-like elements . In this way, the housing body can be prevented from being detached from the carrier along a vertical direction .
  • the steplike element can be formed as an inverted step and may not be visible .
  • the component further comprises an encapsulating layer .
  • the encapsulating layer is formed in an opening of the housing body .
  • the encapsulating layer can be anchored to the metal rods .
  • the encapsulating layer can be transparent or comprise fillers and/or can have the shape of a lens .
  • the e encapsulating layer comprises or is a conversion element .
  • phosphor particles are embedded within material of the encapsulating layer .
  • the encapsulating layer can cover the first semiconductor chip at least partially or completely .
  • the encapsulating layer might be formed by so-called "exposed die molding" concepts .
  • the method comprises the step of forming an anchoring structure on an electrically conductive surface of the carrier, wherein the anchoring structure comprises metal rods being nano-rods and/or micro-rods .
  • the metal rods are distributed meadow-like in places on the electrically conductive surface of the carrier .
  • the method further comprises the step of forming the housing body at least in places on the carrier .
  • the housing body is made from an electrically insulating material and is mechanically fixed to the electrically conductive surface of the carrier such that the metal rods penetrate or protrude into the housing body for enhancing a mechanical connection between the carrier and the housing body .
  • the step of forming the anchoring structure on the electrically conductive surface of the carrier is carried out by using a template comprising a plurality of through-holes being nanoholes and/or micro-holes .
  • the template can be arranged or formed on the electrically conductive surface of the carrier and the metal rods are formed within the through-holes .
  • the template is prefabricated and is arranged on the electrically conductive surface of the carrier .
  • the metal rods can be formed within the through-holes of the template .
  • the forming of the anchoring structure on the electrically conductive surface of the carrier comprises a step of forming a template having a plurality through-holes being nano-holes and/or micro-holes on the electrically conductive surface by using a photolithographic process .
  • the template can be formed directly on the carrier .
  • the metal rods can be formed in the through-holes of the template .
  • the template can be made from a photostructurable material , for example , from a photo-lithographically passive or active lacquer .
  • the step of forming the housing body is followed by the step of forming the anchoring structure .
  • the step of forming the housing body is carried out by a molding or casting process .
  • a molding material can be applied in places on the metal rods so that the metal rods penetrate into the housing body before the molding material is cured .
  • the method is particularly suitable for producing a component described in this disclosure .
  • Features described in connection with the component may therefore also be used for the method, and vice versa .
  • Figures 1A and IB show schematic illustrations of examples of a component in sectional view and in top view .
  • Figure 2A, 2B, 3 , 4 , 5A, 5B, 6A and 6B show schematic illustrations of further examples of a component in sectional views and in top views .
  • Figures 7A, 7B, 7C and 7D show schematic illustrations of some method steps for producing at least one component or a plurality of such components .
  • Figure 1A shows an example of a component 10 in sectional view .
  • the component 10 comprises a carrier 1 having a top surface 1A.
  • the top surface 1A is an electrically conductive surface 1A.
  • the carrier 1 comprises a main body which is formed from an electrically conductive material .
  • the top surface 1A can be a top surface of the main body .
  • a metalli zation for example a NiPdAu layer, is formed on the main body .
  • the top surface 1A being an electrically conductive surface can be formed at least in places by a surface of such metalli zation .
  • the main body can be a lead- frame 6 .
  • the lead- frame 6 or the carrier 1 can comprise a first subregion 61 and a second subregion 62 which is laterally spaced apart from the first subregion 61 by an intermediate region 60 .
  • Metal rods 3A are formed in places on the top surface 1A, for instance in places on surfaces of both the first subregion 61 and the second subregion 62 .
  • the metal rods 3A are nano-rods and/or micro-rods which are distributed meadowlike on the top surface 1A of the carrier 1 .
  • the metal rods 3A can cover at least 5 % or 10 % and at most 80 % of the total area of the top surface 1A, for instance between 10 % and 70 % , 10 % and 60 % , 10 % and 50 % , 10 % and 40 % or between 10 % and 30 % of the total area of the top surface 1A.
  • the metal rods 3A can form or can be part of an anchoring structure 3 which is configured to enhance a mechanical connection between the carrier 1 and a housing body 2 of the component 10 .
  • the housing body 2 is arranged at least in places on the top surface 1A of the carrier 1 , wherein the metal rods 3A penetrate into the housing body 2 .
  • the housing body 2 is anchored to the metal rods 3A resulting in an enhancement of an adhesion strength between the housing body 2 and the carrier 1 .
  • the housing body 2 is electrically insulating .
  • the housing body 2 can be a molded body .
  • a molded body can be understood to mean a body which is formed by a casting or molding process .
  • the housing body 2 can be formed from a molding material .
  • the adhesion of mold compounds to metal surfaces for instance to surfaces of a NiPdAu layer or of a Cu layer or other metal surfaces , is rather low .
  • smooth and flat metalli zations do not provide suf ficient mechanical anchorage .
  • metal rods 3A to the top surface 1A of the carrier 1 so that the carrier 1 can be anchored with the housing body 2 .
  • the housing body 2 can completely cover the metal rods 3A. It is , however, possible that some of the metal rods 3A are not covered by the housing body 2 .
  • the top surface 1A of the carrier 1 is not completely covered by the metal rods 3A. Subregions of the top surface 1A, which are not covered by the metal rods 3A, can be configured to receive one or several semiconductor chips 4 and/or electrical connections like bonding wires 7 .
  • the component 10 comprises at least one first optoelectronic semiconductor chip 41 which can be an optoelectronic semiconductor chip 41 .
  • the first optoelectronic semiconductor chip 41 can be configured to emit or detect electromagnetic radiation during the operation of the component 10 , for instance electromagnetic radiation in the visible , ultraviolet or infrared region of the spectrum .
  • the component 10 can be configured to emit or detect light in the visible , ultraviolet or infrared region of the spectrum .
  • the component 10 can have a phosphor layer 81 which is arranged or fixed on the first semiconductor chip 41 .
  • the phosphor layer 81 can comprise a radiation-transmissive material having fluorescent particles embedded therein for light conversion, wherein the fluorescent particles can be configured to convert UV radiation and/or electromagnetic radiation in the blue spectral range into electromagnetic radiation in the green, yellow, red or infrared spectral range .
  • the phosphor layer 81 does not completely cover a top surface of the first semiconductor chip 41 .
  • Region which is not covered by phosphor layer 81 can be configured to receive an electrical connection, for example a first bonding wire 71 .
  • the phosphor layer 81 completely covers the entire optical interface of the first semiconductor chip 41 .
  • the optical interface can be defined by a top surface of the first semiconductor chip 41 through which electromagnetic radiation is emitted during operation of the first semiconductor chip 41 .
  • the first bonding wire 71 can electrically connect the first semiconductor chip 41 to the second subregion 62 of the lead- frame 6 or of the carrier 1 .
  • the first semiconductor chip 41 is arranged on the first subregion 61 of the lead- frame 6 or of the carrier 1 and can be electrically connected to the first subregion 61 over its bottom side .
  • the first semiconductor chip 41 can be electrically connected to the first subregion 61 and the second subregion 62 of the carrier 1 or of the lead- frame 6 .
  • the component 10 has a bottom surface 10B which can be formed in places by bottom surfaces of the first subregion 61 and the second subregion 62 .
  • the component 10 is electrically connectable to an external power supply via its bottom surface 10B . It is possible , that the bottom surface 10B can be formed in places by surfaces of the housing body 2 .
  • a side surface IS the carrier 1 is not covered by the housing body 2 and thus is externally accessible .
  • the side surface IS of the carrier 1 can also be used for electrically connecting the component 10 to an external power supply .
  • the first subregion 61 and/or the second subregion 62 of the carrier 1 have outer side surfaces IS which are not covered - at least in places or completely - by material of the housing body 2 .
  • the first subregion 61 and/or the second subregion 62 can be flush with the housing body 2 .
  • the intermediate region 60 can be filled by material of the housing body 2 , so that inner side surfaces of the first subregion 61 and/or of the second subregion 62 can be covered by material of the housing body 2 .
  • the housing body 2 can be formed in one piece and thus is contiguous . In a plane view of the top surface 1A, the housing body 2 can cover the second subsection 62 completely and the first subsection 61 partly .
  • the component 10 has an out-coupling surface which can be formed by an outer surface of the phosphor layer 81 .
  • the outer surface of the phosphor layer 81 can be exposed .
  • the out- coupling surface of the phosphor layer 81 is exposed either by removing encapsulation material after the molding process , by applying the molding process such that the outer surface of the phosphor layer 81 is not covered by the molding material during the encapsulation process or molding process .
  • the component 10 has a top surface 10A.
  • the top surface 10A is formed in places by surface of the housing body 2 .
  • the housing body 2 is externally accessible on the top surface 10A of the component 10 .
  • the top surface 10A can comprise a surface of the phosphor layer 81 .
  • the surface of the phosphor layer 81 and the surface of the housing body 2 can be flush to each other at a vertical position, as shown in Figure 1A.
  • the exemplary embodiment of a component 10 shown in Figure IB substantially corresponds to the exemplary embodiment of the component 10 shown in Figure 1A when it is shown in top view .
  • side surfaces IS of the carrier 1 are covered by material of the housing body 2 .
  • the housing body 2 can completely surround the carrier 1 .
  • the first subregion 61 and the second subregion 62 of the carrier 1 are surrounded by the housing body 2 .
  • the side surfaces 10S of the component 10 can be completely or mainly provided by the side surfaces of the housing body 2 .
  • the side surfaces I OS of the component 10 can comprise surfaces of tie bars 3B as shown for instance in Figures 5B and 6B and/or step-like elements 3C .
  • Figure IB the distribution of the metal rods 3A on the top surface 1A of the carrier 1 is illustrated .
  • the regions of the top surface 1A, which are covered completely or at least in places by the metal rods 3A, are framed or surrounded by dashed lines in Figure IB .
  • These regions of the top surface 1A can be covered by the housing body 2 .
  • the covering is shown in a transparent manner in Figure IB so that the distribution of the metal rods 3A can be visuali zed .
  • the metal rods 3A form meadow-like areas on the top surface 1A.
  • the first subregion 61 comprises a mounting surface which is part of the top surface 1A and is not covered by the metal rods 3A. In lateral directions , the mounting surface can be completely surrounded by the metal rods 3A.
  • the semiconductor chip 4 or 41 is arranged on the mounting surface .
  • the second subregion 62 comprises a contact surface which is part of the top surface 1A and is not covered by the metal rods 3A. In lateral directions , the contact surface can be partly or completely surrounded by the metal rods 3A.
  • the contact surface is configured to receive the first bonding wire 71 which bridges the intermediate region 60 .
  • the housing body 2 can adj oin all side surfaces of the semiconductor chip 4 .
  • the first bonding wire 71 can be fully embedded within the housing body 2 .
  • the first subsection 61 and/or the second subsection 62 , and thus the carrier 1 can have straight and substantially smooth side surface/ s IS .
  • the metal rods 3A form the anchoring structure 3 which strengthens a mechanical connection between the carrier 1 and the housing body 2 .
  • the metal rods 3A can form the only anchoring elements of the anchoring structure 3 .
  • the anchoring structure 3 can be void of further anchoring elements like step-like elements 3C and/or tie bars 3B shown for instance in Figures 5B and 6B .
  • the housing body 2 comprises an opening or a cavity 20 in which the first semiconductor chip 41 is arranged .
  • the cavity 20 has oblique inner walls which are spaced apart from the first semiconductor chip 41 and from the first bonding wire 71 .
  • the first bonding wire 71 is not embedded within the housing body 2 .
  • a bottom surface of the cavity 20 can comprise surfaces of the housing body 2 , the first subregion 61 and the second subregion 62 of the main body or of the lead- frame 6 of the carrier 1 .
  • the bottom surface of the cavity 20 can be void of the metal rods 3A or can be provided in places with the metal rods 3A.
  • the cavity 20 can be filled with an encapsulating material of an encapsulating layer 82 as shown in Figure 4 or 6A, for example with an electrically insulating and radiation-transmissive , for instance transparent material .
  • the metal rods 3A can also provide additional mechanical connection between the carrier 1 and the encapsulating layer 82 .
  • the carrier 1 can be completely surrounded by the housing body 2 .
  • the component 10 shown in Figure 2B can be identical to the component 10 shown in Figure 2A.
  • the component 10 further comprises a second semiconductor chip 42 , wherein the second semiconductor chip 42 is arranged on the second subregion 62 of the carrier 1 .
  • the second semiconductor chip 42 is electrically connected to the first semiconductor chip 41 in an antiparallel manner .
  • the second semiconductor chip 42 can be a protection diode , for example an ESD chip .
  • the second semiconductor chip 42 can be electrically connected to the second subregion 62 via its bottom side and to the first subregion 61 via a second bonding wire 72 which bridges the intermediate region 60 .
  • the cavity 20 is indicated in Figure 2B by a region marked by a frame of solid lines .
  • the second semiconductor chip 42 can be located outside the cavity 20 .
  • regions surrounded by dashed lines are regions of the metal rods 3A which can be covered by the housing body 2 and anchored to the housing body 2 .
  • the main body of the carrier 1 can be formed from an electrically insulating material .
  • the main body of the carrier 1 can be formed in one piece and thus is contiguous .
  • the main body of the carrier 1 is an insulating substrate 5 .
  • the insulating substrate 5 can be a ceramic substrate , a printed circuit board ( PCB ) or the like .
  • the carrier 1 comprises a metalli zation 50 .
  • the metalli zation 50 can be a metal layer made of or comprising at least one of Cu, Au, Ag, Pt , Ni and Sn or is a NiPdAu layer .
  • the metalli zation 50 has a vertical thickness which is signi ficantly smaller than a vertical thickness of the insulating substrate 5 , for example at least 3 , 5 , 10 , 20 or at least 50 times smaller .
  • the metalli zation 50 can be divided into a plurality of spatially separated subregions 51 and 52 , wherein the subregions 51 and 52 can be configured to receive semiconductor chips 4 and/or electrical connections like bonding wires 7 .
  • the metalli zation 50 can also comprise stripe-like regions which are formed as conductor tracks for electrically connecting di f ferent subregions 51 and 52 for instance of the same electrical polarity .
  • the top surface 1A being an electrically conductive surface 1A of the carrier 1 can be formed by a surface of the metalli zation 50 .
  • the metal rods 3A can be formed, for instance can be grown on predetermined regions of the surface of the metalli zation 50 .
  • the exemplary embodiment of a component 10 shown in Figure 4 substantially corresponds to the exemplary embodiment of the component 10 shown in Figure 2A.
  • the carrier 1 can comprise an insulating substrate 5 and a metalli zation 50 .
  • the cavity 20 is filled with an encapsulating layer 82 which is anchored to the metal rods 3A formed on a bottom surface of the cavity 20 .
  • the metal rods 3A penetrate into the encapsulating layer 82 for strengthening a mechanical connection between the carrier 1 and the encapsulating layer 82 .
  • the encapsulating layer 82 can fill the cavity partly or completely .
  • the top surface 10A of the component 10 can be formed partly by a top surface of the encapsulating layer 82 and partly by a top surface the housing body 2 .
  • the top surface of the encapsulating layer 82 can be a plane surface as shown in Figure 4 or can be concavely or convexly curved, for instance dome-shaped as shown in Figure 6A.
  • the encapsulating layer 82 can have the form of a lens .
  • the bonding wire 7 for instance the first bonding wire 71 , can be fully embedded within the encapsulating layer 82 .
  • the exemplary embodiment of a component 10 shown in Figure 5A substantially corresponds to the exemplary embodiment of the component 10 shown in Figure 1A.
  • the anchoring structure 3 can further comprise tie bars 3B and/or step-like elements 3C .
  • a step-like element 3C can be understood as an undercut ( German : Schutent ) of the carrier 1 .
  • the carrier 1 has a reduced vertical thickness , for instance a reduction from 20 % to 80 % , from 20 % to 70 % , from 20 % to 60 % , from 20 % to 50 % or from 20 % to 40 % of the total thickness of the carrier 1 .
  • the step-like element 3C is usually not visible , since it is located below the top surface 1A of the carrier 1 .
  • each of the first subregion 61 and the second subregion 62 of the carrier 1 can comprise several tie bars 3B, here for example six and four tie bars 3B, respectively .
  • the step-like element/ s 3C below the top surface 1A can be present but is/are not shown explicitly in Figure 5B .
  • the step-like element 3C has a larger lateral width or a larger lateral length than the tie bar 3B .
  • the step-like element 3C can have a larger vertical thickness than the tie bar 3B .
  • the tie bar 3B is configured to connect di f ferent first subregions 61 and/or di f ferent second subregions 62 of di f ferent carrier 1 of di f ferent components 10 during production .
  • the tie bar 3B is usually designed to have small si zes , since in a singulation process for singulating the components 10 , the tie bar 3B is cut through .
  • the tie bar 3B is formed by a subregion of the metalli zation 50 .
  • the step-like element 3C may be formed by structuring the insulating substrate 5 , for instance by locally reducing the vertical thickness of the insulating substrate 5 .
  • Figures 7A to 7D show some method step for producing a plurality of components 10 .
  • the component 10 produced by this method can be any of the components 10 described in this disclosure .
  • Figures 7A to 7D only the production of the components 10 described for instance in Figures 3 , 5A and 5B is show explicitly .
  • a carrier composite IV comprises a plurality of carriers 1 .
  • Each carrier 1 can comprise at least one first subregion 51 or 61 and at least one second subregion 52 or 62 .
  • One first subregion 51 or 61 can be mechanically connected to one neighboring second subregion 52 or 62 or to another first subregion 51 or 61 by the tie bars 3B .
  • One second subregion 52 or 62 can be mechanically connected to one neighboring first subregion 51 or 61 or to another second subregion 52 or 62 by the tie bars 3B .
  • the first subregions 51 or 61 and second subregions 52 or 62 can be parts of a lead- frame 6 or of a metalli zation 50 formed for instance on an insulating substrate 5 .
  • a template 9 is arranged or formed on the carrier composite IV .
  • the template 9 comprises a plurality through-holes 9H being nano-holes and/or micro-holes .
  • the distribution of the through-holes 9H can be adapted to the si zes and geometries of the first subregion 51 or 61 , the second subregion 52 or 62 and/or of the tie bars 3B shown in Figure 7B .
  • the template 9 can comprise first subregions 91 and second subregions 92 which are free of the through-holes 9H .
  • Each of the first subregions 91 and/or of the second subregions 92 of the template 9 can be laterally surrounded by the through-holes 9H .
  • the semiconductor chips 4 can be electrically connected to one further first or second subregion 51 , 61 , 52 or 62 of the corresponding carrier 1 by forming bonding wires 7 , for instance by forming first bonding wires 71 and/or second bonding wires 72 .
  • the geometry and placement of the metal rods 3A can be defined in many ways , for instance using a prefabricated template 9 or can be defined via a photo step on the carriers 1 .
  • the distribution of the metal rods 3A can therefore be defined very exactly and finely .
  • the distribution of the metal rods 3A can be predefined in a simpli fied manner i f photolithographic definition of the subregions with metal rods 3A is combined with films whose ion track etched channels determine diameter and density of the metal rods 3A.
  • metal rods technology in anchoring a housing body, which can be an inj ection molded body, on a substrate or a lead- frame is advantageous in many respects .
  • the position of the metal rods 3A is well defined, so that even when possible cavities are molded, there is no collision with the molding process , since the molding surfaces remain free during the molding process , for example during inj ection molding .
  • the requirements for GTE ( coef ficient of thermal expansion) matching of the housing body 2 and/or of the encapsulating layer 82 to the carrier 1 can be reduced . It may therefore be possible to use clear or transparent material for housing body 2 and/or for the encapsulating layer 82 .
  • the mold fit of the molded body around the main body of the carrier 1 for example of the lead- frame 6
  • the mold fit of the molded body around the main body of the carrier 1 can become much tighter, which reduces or simpli fies the so-called deflashing process when cavities are molded .
  • Problems such as seepage of casting materials in general and seepage of solder flux or similar low viscose materials , for example silicone seepage , due to gaps between lead- frame 6 and the molded body are eliminated or at least signi ficantly reduced .
  • the deflashing process gets necessary due to leakage of the pressuri zed liquid mold compound during the molding process for example between the housing body 2 in liquid aggregate state and the top surface 1A.
  • the metal rods 3A also improve the thermal coupling and thus help to dissipate heat losses more ef fectively .
  • the GTE transition between the epoxy mold compound, EMC, and the carrier 1 can be extremely sharp, for example from epoxy mold compound to Cu .
  • the CTE transition becomes smooth, as a result of which the thermomechanical reliability is signi ficantly improved .
  • the encapsulated metal rods 3A reduce the CTE of the nano-wires and/or nano-wires EMC compound .
  • the EMC material itsel f no longer needs to be precisely matched to the carrier 1 in terms of CTE , even without the use of inorganic fillers , for instance of SiO2 particles . This allows the processing of more fillable EMC with less inorganic fillers .
  • the housing body 2 or the cured EMC is thus more ductile which further increases the stability of the component 10 .
  • the encapsulated metal rods 3A also provide stress absorption and increase the mechanical stability of the component 10 .
  • the component 10 can be a LED package with the housing body 2 being for instance an inj ection molded body .
  • the use of only the metal rods 3A may also be suf ficient for achieving a highly stable component 10 .

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

A component (10) is provided which comprises a carrier (1) and a housing body (2), wherein the carrier (1) comprises an electrically conductive surface (1A) and wherein the housing body (2) is electrically insulating and is mechanically fixed to the electrically conductive surface (1A) of the carrier (1). A mechanical connection between the carrier (1) and the housing body (2) is enhanced by an anchoring structure (3), wherein the anchoring structure (3) comprises metal rods (3A) penetrating into the housing body (2). The metal rods (3A) are nano-rods and/or micro-rods and are distributed meadow-like in places on the electrically conductive surface (1A) of the carrier (1). Moreover, a method for producing such a component (10) is provided.

Description

Description
COMPONENT HAVING ANCHORING STRUCTURE AND METHOD FOR PRODUCING A COMPONENT HAVING ANCHORING STRUCTURE
A component having an anchoring structure is speci fied . Moreover, a method for producing a component having an anchoring structure or a plurality of such components is provided .
A conventional component which includes a carrier and a housing body formed on the carrier may exhibit inadequate mechanical stability due to poor mechanical connection or poor adhesion between the housing body and the carrier .
One obj ect is to provide a component having an anchoring structure which is configured to enhance a mechanical connection between a carrier and a housing body of the component , resulting in an improved mechanical stability of the component . Another obj ect is to provide a simpli fied but ef ficient method for producing such a component or a plurality of such components .
These obj ects are solved by the component according to the independent claim and by the method described in connection with the independent claim . Further embodiments of the component or of the method are the subj ect matter of the further claims .
According to at least one embodiment of a component , it comprises a carrier and a housing body . The carrier comprises an electrically conductive surface . The housing body is electrically insulating and is mechanically fixed to the electrically conductive surface of the carrier . A mechanical connection between the carrier and the housing body is enhanced by an anchoring structure . The anchoring structure comprises metal rods penetrating into the housing body, wherein the metal rods are nano-rods and/or micro-rods and are distributed meadow-like in places on the electrically conductive surface of the carrier .
Here , the electrically conductive surface can be a top surface of a main body of the carrier, for example of a lead- frame or of an insulating substrate having a metalli zation .
According to at least one embodiment of the component , the metal rods have lateral diameters from 30 nm to 20 pm, for instance from 30 nm to 10 pm, from 30 nm to 5 pm, from 30 nm to 2 pm, from 100 nm to 10 pm, from 300 nm to 10 pm or from 500 nm to 5 pm . Here , the metal rods can have cross-sections of any geometrical forms . For example , the cross-sections are circles , circle-like , elliptical or are of irregular shapes . The metal rods may exhibit a hollow core cross-section or a filled cross-section . For example , the diameters of the metal rods are provided by the largest lateral expansion of the corresponding metal rod . In other words , a diameter of a metal rod shall be understood as a maximum lateral extent of a cross-section of the metal rod . The metal rods can be formed from a metal like Cu, Au, Ag, Pt , Ni or Sn .
The diameters can be from 30 nm to 1 pm in case of nano-rods , for instance from 30 nm to 900 nm, from 30 nm to 600 nm, from 30 nm to 300 nm, from 30 nm to 100 nm, or from 100 nm to 1 pm, 300 nm to 1 pm, 500 nm to 1 pm or from 600 nm to 1 pm . In case of micro-rods , the diameters can be from 1 pm to 20 pm, from 3 pm to 20 pm, from 5 pm to 20 pm or from 10 pm to 20 pm. It is possible that all metal rods are nano-rods, are micro-rods or a mix of nano-rods and micro-rods.
A lateral direction is understood to be a direction parallel to a main extension surface of the carrier, for example parallel to the top surface of the main body of the carrier. A vertical direction is understood to be a direction that is perpendicular to the main extension surface of the carrier and/or to the top surface of the main body of the carrier. The vertical direction and the lateral direction are perpendicular to each other.
According to at least one embodiment of the component, the metal rods have vertical heights from 2 pm to 100 pm, for example, from 2 pm to 80 pm, from 2 pm to 50 pm, from 2 pm to 20 pm, from 2 pm to 10 pm, from 2 pm to 5 pm, or from 5 pm to 100 pm, from 10 pm to 100 pm, from 20 pm to 100 pm, from 30 pm to 100 pm, from 50 pm to 100 pm, or from 60 pm to 100 pm.
It is possible that all metal rods have roughly the same vertical height. For example, the vertical height of any of the individual metal rods does not differ from an average vertical height of all metal rods by more than 50 %, 30 %, 20 % , 10 %, 5 % or 3 % of the average vertical height.
According to at least one embodiment of the component, the number metal rods is greater than 10, 20, 30, 50, 100, 300, or greater 1000. Depending on the sizes of the diameters of the metal rods, lateral distances between neighboring metal rods can be greater or smaller than the average diameter of the metal rods, for instance between 0.1 and 10 times the average diameter, between 0.7 and 7 times the average diameter, between 0.5 and 5 times the average diameter, between 0 . 3 and 3 times the average diameter, or between 0 . 2 and 2 times the average diameter .
According to at least one embodiment of the component , the housing body is a molded body . A molded body is understood to mean an electrically insulating body which can be formed by an encapsulation process . An encapsulation process is generally understood to mean a process by which a molding compound can be shaped in accordance with a speci fied form and, i f necessary, cured, optionally under the action of temperature or pressure . In particular, the term " encapsulation process" includes at least molding, inj ection molding, vacuum inj ection molding, film assisted molding, trans fer molding and compression molding . The housing body may be made of an electrically insulating molding material , for example of a plastic, a castable polymer such as epoxies or silicones . For example , the housing body is formed by compression molding or by film assisted molding . The molding material may contain filler particles , for instance silicon dioxide particles and titan dioxide particles or carbon black .
According to at least one embodiment of the component , the carrier is a lead- frame made of an electrically conductive material , for instance of Cu or copper alloy . The electrically conductive surface can be a surface of the lead- frame , for instance a top surface of the lead- frame .
The lead- frame can comprise a first subregion and a second subregion spaced apart from the first subregion . The first subregion and the second subregion can be laterally surrounded by the housing body and thus are mechanically connected to each other by the housing body . Along a vertical direction, the first subregion and/or the second subregion can extend at least in places through the housing body . The first subregion and the second subregion can be assigned to di f ferent electrical polarities of the component . The first subregion and the second subregion can be configured for electrically contacting the component to an external voltage source .
According to at least one embodiment of the component , the carrier comprises an insulating substrate . It is possible that the insulating substrate can comprises through-vias and/or current spreading structures . The carrier can further comprise a metalli zation, wherein the electrically conductive surface of the carrier is a surface of the metalli zation . For example , the carrier comprises a ceramic substrate having the metalli zation formed thereon . The metalli zation can be structured and comprise a plurality of subregions which can be spatially separated . The carrier can also be a printed circuit board .
According to at least one embodiment of the component , it further comprises a first semiconductor chip . The first semiconductor chip can be arranged on a first subregion of the electrically conductive surface , wherein the first subregion is not covered by the metal rods . For example , the first semiconductor chip is configured to emit electromagnetic radiation . It is possible that the component comprises a plurality of first semiconductor chips .
The component can further comprise a second semiconductor chip, wherein the second semiconductor chip is arranged on another region of the electrically conductive surface not being covered by the metal rods . The second semiconductor chip can be electrically connected to the first semiconductor chip in an antiparallel manner . The second semiconductor chip may be a protection diode . The second semiconductor chip can be embedded within the housing body . The first semiconductor chip, for example , is not covered by the housing body .
According to at least one embodiment of the component , the anchoring structure further comprises tie bars . For example , the tie bars are formed as lateral parts of the carrier . The tie bars can have a smallest vertical thickness of the carrier . For example , the tie bars are surrounded by the housing body in such a way that on side surfaces of the component , they are flush with the housing body .
According to at least one embodiment of the component , the anchoring structure further comprises step-like elements . The step-like elements can be formed by side surfaces of the carrier . The housing body can be anchored to the step-like elements . In this way, the housing body can be prevented from being detached from the carrier along a vertical direction . In a plane view of the top surface of the carrier, the steplike element can be formed as an inverted step and may not be visible .
According to at least one embodiment of the component , it further comprises an encapsulating layer . For instance , the encapsulating layer is formed in an opening of the housing body . The encapsulating layer can be anchored to the metal rods . The encapsulating layer can be transparent or comprise fillers and/or can have the shape of a lens . It is possible that the e encapsulating layer comprises or is a conversion element . For example , phosphor particles are embedded within material of the encapsulating layer . In top view, the encapsulating layer can cover the first semiconductor chip at least partially or completely . The encapsulating layer might be formed by so-called "exposed die molding" concepts .
According to one embodiment of a method for producing a component having a carrier and a housing body, the method comprises the step of forming an anchoring structure on an electrically conductive surface of the carrier, wherein the anchoring structure comprises metal rods being nano-rods and/or micro-rods . The metal rods are distributed meadow-like in places on the electrically conductive surface of the carrier . The method further comprises the step of forming the housing body at least in places on the carrier . The housing body is made from an electrically insulating material and is mechanically fixed to the electrically conductive surface of the carrier such that the metal rods penetrate or protrude into the housing body for enhancing a mechanical connection between the carrier and the housing body .
According to at least one embodiment of the method, the step of forming the anchoring structure on the electrically conductive surface of the carrier is carried out by using a template comprising a plurality of through-holes being nanoholes and/or micro-holes . The template can be arranged or formed on the electrically conductive surface of the carrier and the metal rods are formed within the through-holes . For example , the template is prefabricated and is arranged on the electrically conductive surface of the carrier . The metal rods can be formed within the through-holes of the template .
According to at least one embodiment of the method, the forming of the anchoring structure on the electrically conductive surface of the carrier comprises a step of forming a template having a plurality through-holes being nano-holes and/or micro-holes on the electrically conductive surface by using a photolithographic process . In this case , the template can be formed directly on the carrier . The metal rods can be formed in the through-holes of the template . The template can be made from a photostructurable material , for example , from a photo-lithographically passive or active lacquer .
According to at least one embodiment of the method, the step of forming the housing body is followed by the step of forming the anchoring structure . For instance , the step of forming the housing body is carried out by a molding or casting process . Here , a molding material can be applied in places on the metal rods so that the metal rods penetrate into the housing body before the molding material is cured .
The method is particularly suitable for producing a component described in this disclosure . Features described in connection with the component may therefore also be used for the method, and vice versa .
Further embodiments and further developments of the component or the method will be apparent from the embodiments explained below in connection with Figures 1A, IB, 2A, 2B, 3 , 4 , 5A, 5B, 6A, 6B, 7A, 7B, 7C and 7D .
Figures 1A and IB show schematic illustrations of examples of a component in sectional view and in top view .
Figure 2A, 2B, 3 , 4 , 5A, 5B, 6A and 6B show schematic illustrations of further examples of a component in sectional views and in top views . Figures 7A, 7B, 7C and 7D show schematic illustrations of some method steps for producing at least one component or a plurality of such components .
Identical , equivalent or equivalently acting elements are indicated with the same reference numerals in the figures . The figures are schematic illustrations and thus not necessarily true to scale . Comparatively small elements and particularly layer thicknesses can rather be illustrated exaggeratedly large for the purpose of better clari fication .
Figure 1A shows an example of a component 10 in sectional view . The component 10 comprises a carrier 1 having a top surface 1A. The top surface 1A is an electrically conductive surface 1A. For example , the carrier 1 comprises a main body which is formed from an electrically conductive material . The top surface 1A can be a top surface of the main body . It is also possible that a metalli zation, for example a NiPdAu layer, is formed on the main body . In this case , the top surface 1A being an electrically conductive surface can be formed at least in places by a surface of such metalli zation .
The main body can be a lead- frame 6 . The lead- frame 6 or the carrier 1 can comprise a first subregion 61 and a second subregion 62 which is laterally spaced apart from the first subregion 61 by an intermediate region 60 .
Metal rods 3A are formed in places on the top surface 1A, for instance in places on surfaces of both the first subregion 61 and the second subregion 62 . For example , the metal rods 3A are nano-rods and/or micro-rods which are distributed meadowlike on the top surface 1A of the carrier 1 . The metal rods 3A can cover at least 5 % or 10 % and at most 80 % of the total area of the top surface 1A, for instance between 10 % and 70 % , 10 % and 60 % , 10 % and 50 % , 10 % and 40 % or between 10 % and 30 % of the total area of the top surface 1A. The metal rods 3A can form or can be part of an anchoring structure 3 which is configured to enhance a mechanical connection between the carrier 1 and a housing body 2 of the component 10 .
As shown in Figure 1A, the housing body 2 is arranged at least in places on the top surface 1A of the carrier 1 , wherein the metal rods 3A penetrate into the housing body 2 . Thus the housing body 2 is anchored to the metal rods 3A resulting in an enhancement of an adhesion strength between the housing body 2 and the carrier 1 .
The housing body 2 is electrically insulating . The housing body 2 can be a molded body . A molded body can be understood to mean a body which is formed by a casting or molding process . Thus , the housing body 2 can be formed from a molding material . Usually, the adhesion of mold compounds to metal surfaces , for instance to surfaces of a NiPdAu layer or of a Cu layer or other metal surfaces , is rather low . For example , smooth and flat metalli zations do not provide suf ficient mechanical anchorage . It is suggested to apply metal rods 3A to the top surface 1A of the carrier 1 so that the carrier 1 can be anchored with the housing body 2 . As shown in Figure 1A, in top view, the housing body 2 can completely cover the metal rods 3A. It is , however, possible that some of the metal rods 3A are not covered by the housing body 2 .
For example , the top surface 1A of the carrier 1 is not completely covered by the metal rods 3A. Subregions of the top surface 1A, which are not covered by the metal rods 3A, can be configured to receive one or several semiconductor chips 4 and/or electrical connections like bonding wires 7 . As shown in Figure 1A, the component 10 comprises at least one first optoelectronic semiconductor chip 41 which can be an optoelectronic semiconductor chip 41 . The first optoelectronic semiconductor chip 41 can be configured to emit or detect electromagnetic radiation during the operation of the component 10 , for instance electromagnetic radiation in the visible , ultraviolet or infrared region of the spectrum . Thus , the component 10 can be configured to emit or detect light in the visible , ultraviolet or infrared region of the spectrum .
As shown in Figure 1A, the component 10 can have a phosphor layer 81 which is arranged or fixed on the first semiconductor chip 41 . The phosphor layer 81 can comprise a radiation-transmissive material having fluorescent particles embedded therein for light conversion, wherein the fluorescent particles can be configured to convert UV radiation and/or electromagnetic radiation in the blue spectral range into electromagnetic radiation in the green, yellow, red or infrared spectral range .
For example , the phosphor layer 81 does not completely cover a top surface of the first semiconductor chip 41 . Region which is not covered by phosphor layer 81 can be configured to receive an electrical connection, for example a first bonding wire 71 . It is possible that the phosphor layer 81 completely covers the entire optical interface of the first semiconductor chip 41 . The optical interface can be defined by a top surface of the first semiconductor chip 41 through which electromagnetic radiation is emitted during operation of the first semiconductor chip 41 . The first bonding wire 71 can electrically connect the first semiconductor chip 41 to the second subregion 62 of the lead- frame 6 or of the carrier 1 . The first semiconductor chip 41 is arranged on the first subregion 61 of the lead- frame 6 or of the carrier 1 and can be electrically connected to the first subregion 61 over its bottom side . Thus , the first semiconductor chip 41 can be electrically connected to the first subregion 61 and the second subregion 62 of the carrier 1 or of the lead- frame 6 . The component 10 has a bottom surface 10B which can be formed in places by bottom surfaces of the first subregion 61 and the second subregion 62 . Thus , the component 10 is electrically connectable to an external power supply via its bottom surface 10B . It is possible , that the bottom surface 10B can be formed in places by surfaces of the housing body 2 .
It is possible that a side surface IS the carrier 1 is not covered by the housing body 2 and thus is externally accessible . Thus , the side surface IS of the carrier 1 can also be used for electrically connecting the component 10 to an external power supply . For example , the first subregion 61 and/or the second subregion 62 of the carrier 1 have outer side surfaces IS which are not covered - at least in places or completely - by material of the housing body 2 . Along a lateral direction, the first subregion 61 and/or the second subregion 62 can be flush with the housing body 2 . The intermediate region 60 , however, can be filled by material of the housing body 2 , so that inner side surfaces of the first subregion 61 and/or of the second subregion 62 can be covered by material of the housing body 2 . The housing body 2 can be formed in one piece and thus is contiguous . In a plane view of the top surface 1A, the housing body 2 can cover the second subsection 62 completely and the first subsection 61 partly .
The component 10 has an out-coupling surface which can be formed by an outer surface of the phosphor layer 81 . The outer surface of the phosphor layer 81 can be exposed . For instance , depending on the encapsulation process , the out- coupling surface of the phosphor layer 81 is exposed either by removing encapsulation material after the molding process , by applying the molding process such that the outer surface of the phosphor layer 81 is not covered by the molding material during the encapsulation process or molding process .
The component 10 has a top surface 10A. The top surface 10A is formed in places by surface of the housing body 2 . In this case , the housing body 2 is externally accessible on the top surface 10A of the component 10 . The top surface 10A can comprise a surface of the phosphor layer 81 . The surface of the phosphor layer 81 and the surface of the housing body 2 can be flush to each other at a vertical position, as shown in Figure 1A.
The exemplary embodiment of a component 10 shown in Figure IB substantially corresponds to the exemplary embodiment of the component 10 shown in Figure 1A when it is shown in top view . In deviation from Figure 1A, it is possible that side surfaces IS of the carrier 1 are covered by material of the housing body 2 . In lateral directions , the housing body 2 can completely surround the carrier 1 . In this case , the first subregion 61 and the second subregion 62 of the carrier 1 are surrounded by the housing body 2 . The side surfaces 10S of the component 10 can be completely or mainly provided by the side surfaces of the housing body 2 . In deviation from this , it is also possible that the side surfaces I OS of the component 10 can comprise surfaces of tie bars 3B as shown for instance in Figures 5B and 6B and/or step-like elements 3C .
In Figure IB, the distribution of the metal rods 3A on the top surface 1A of the carrier 1 is illustrated . The regions of the top surface 1A, which are covered completely or at least in places by the metal rods 3A, are framed or surrounded by dashed lines in Figure IB . These regions of the top surface 1A can be covered by the housing body 2 . The covering, however, is shown in a transparent manner in Figure IB so that the distribution of the metal rods 3A can be visuali zed . As shown in Figures 1A and IB, the metal rods 3A form meadow-like areas on the top surface 1A.
As shown in Figure IB, the first subregion 61 comprises a mounting surface which is part of the top surface 1A and is not covered by the metal rods 3A. In lateral directions , the mounting surface can be completely surrounded by the metal rods 3A. The semiconductor chip 4 or 41 is arranged on the mounting surface . The second subregion 62 comprises a contact surface which is part of the top surface 1A and is not covered by the metal rods 3A. In lateral directions , the contact surface can be partly or completely surrounded by the metal rods 3A. The contact surface is configured to receive the first bonding wire 71 which bridges the intermediate region 60 .
As shown in Figures 1A and IB, the housing body 2 can adj oin all side surfaces of the semiconductor chip 4 . The first bonding wire 71 can be fully embedded within the housing body 2 . The first subsection 61 and/or the second subsection 62 , and thus the carrier 1 can have straight and substantially smooth side surface/ s IS . The metal rods 3A form the anchoring structure 3 which strengthens a mechanical connection between the carrier 1 and the housing body 2 .
It is possible that no further anchoring elements like tie bars 3B and/or step-like elements 3C are necessary for achieving a component 10 having high mechanical stability . Particularly in the case of small-si zed components 10 being for example of small-si zed LED packages , where there is no or hardly any space available for forming further anchoring elements , the metal rods 3A can form the only anchoring elements of the anchoring structure 3 . In this case , the anchoring structure 3 can be void of further anchoring elements like step-like elements 3C and/or tie bars 3B shown for instance in Figures 5B and 6B .
Thus , it can be avoided that in the event of mechanical stress , during operation or already during production, e . g . when separation or singulation of the components 10 is performed for instance by sawing, cracks or fissures may appear in the component 10 , or in extreme cases , part of the carrier 1 , for example part of the lead- frame 6 , is torn out of the housing body 2 . Without the tie bars 3B, the singulation of the components 10 can be performed in a simpli fied and secure manner, since the singulation will be performed only within the housing body 2 .
The exemplary embodiment of a component 10 shown in Figure 2A substantially corresponds to the exemplary embodiment of the component 10 shown in Figure 1A. In deviation from Figure 1A, according to Figure 2A, the housing body 2 comprises an opening or a cavity 20 in which the first semiconductor chip 41 is arranged . The cavity 20 has oblique inner walls which are spaced apart from the first semiconductor chip 41 and from the first bonding wire 71 . In this case , the first bonding wire 71 is not embedded within the housing body 2 .
A bottom surface of the cavity 20 can comprise surfaces of the housing body 2 , the first subregion 61 and the second subregion 62 of the main body or of the lead- frame 6 of the carrier 1 . The bottom surface of the cavity 20 can be void of the metal rods 3A or can be provided in places with the metal rods 3A. The cavity 20 can be filled with an encapsulating material of an encapsulating layer 82 as shown in Figure 4 or 6A, for example with an electrically insulating and radiation-transmissive , for instance transparent material . The metal rods 3A can also provide additional mechanical connection between the carrier 1 and the encapsulating layer 82 .
In further deviation from Figure 1A, similarly to Figure IB, in lateral directions , the carrier 1 can be completely surrounded by the housing body 2 . This is shown explicitly also in Figure 2B, wherein the exemplary embodiment of a component 10 shown in Figure 2B substantially corresponds to the exemplary embodiment of the component 10 shown in Figure IB . The component 10 shown in Figure 2B can be identical to the component 10 shown in Figure 2A.
As shown in Figure 2B, the component 10 further comprises a second semiconductor chip 42 , wherein the second semiconductor chip 42 is arranged on the second subregion 62 of the carrier 1 . For example , the second semiconductor chip 42 is electrically connected to the first semiconductor chip 41 in an antiparallel manner . The second semiconductor chip 42 can be a protection diode , for example an ESD chip . The second semiconductor chip 42 can be electrically connected to the second subregion 62 via its bottom side and to the first subregion 61 via a second bonding wire 72 which bridges the intermediate region 60 . As indicated in Figure 2B, it is possible for the second semiconductor chip 42 to be embedded within the housing body 2 . The cavity 20 is indicated in Figure 2B by a region marked by a frame of solid lines . Thus , the second semiconductor chip 42 can be located outside the cavity 20 . As shown in Figure IB, in Figure 2B, regions surrounded by dashed lines are regions of the metal rods 3A which can be covered by the housing body 2 and anchored to the housing body 2 .
The exemplary embodiment of a component 10 shown in Figure 3 substantially corresponds to the exemplary embodiment of the component 10 shown in Figure 1A. In deviation from Figure 1A, according to Figure 3 , the main body of the carrier 1 can be formed from an electrically insulating material . The main body of the carrier 1 can be formed in one piece and thus is contiguous . For instance , the main body of the carrier 1 is an insulating substrate 5 . The insulating substrate 5 can be a ceramic substrate , a printed circuit board ( PCB ) or the like .
The carrier 1 comprises a metalli zation 50 . The metalli zation 50 can be a metal layer made of or comprising at least one of Cu, Au, Ag, Pt , Ni and Sn or is a NiPdAu layer . The metalli zation 50 has a vertical thickness which is signi ficantly smaller than a vertical thickness of the insulating substrate 5 , for example at least 3 , 5 , 10 , 20 or at least 50 times smaller . The metalli zation 50 can be divided into a plurality of spatially separated subregions 51 and 52 , wherein the subregions 51 and 52 can be configured to receive semiconductor chips 4 and/or electrical connections like bonding wires 7 . The metalli zation 50 can also comprise stripe-like regions which are formed as conductor tracks for electrically connecting di f ferent subregions 51 and 52 for instance of the same electrical polarity .
The top surface 1A being an electrically conductive surface 1A of the carrier 1 can be formed by a surface of the metalli zation 50 . The metal rods 3A can be formed, for instance can be grown on predetermined regions of the surface of the metalli zation 50 .
The exemplary embodiment of a component 10 shown in Figure 4 substantially corresponds to the exemplary embodiment of the component 10 shown in Figure 2A. In contrast , according to Figure 4 , similarly to Figure 3 , the carrier 1 can comprise an insulating substrate 5 and a metalli zation 50 .
Moreover, the cavity 20 is filled with an encapsulating layer 82 which is anchored to the metal rods 3A formed on a bottom surface of the cavity 20 . Here , the metal rods 3A penetrate into the encapsulating layer 82 for strengthening a mechanical connection between the carrier 1 and the encapsulating layer 82 . The encapsulating layer 82 can fill the cavity partly or completely . The top surface 10A of the component 10 can be formed partly by a top surface of the encapsulating layer 82 and partly by a top surface the housing body 2 . The top surface of the encapsulating layer 82 can be a plane surface as shown in Figure 4 or can be concavely or convexly curved, for instance dome-shaped as shown in Figure 6A. The encapsulating layer 82 can have the form of a lens . The bonding wire 7 , for instance the first bonding wire 71 , can be fully embedded within the encapsulating layer 82 .
The exemplary embodiment of a component 10 shown in Figure 5A substantially corresponds to the exemplary embodiment of the component 10 shown in Figure 1A. In addition to the metal rods 3A as shown in Figure 1A, according to Figure 5A, the anchoring structure 3 can further comprise tie bars 3B and/or step-like elements 3C .
In this disclosure , a tie bar 3B can be understood as a lateral portion of the carrier 1 which can extend along a lateral direction to one side surface 10S of the component 10 . Thus , the tie bar 3B can be visible at the side surface 10S of the component 10 . At the side surface 10S of the component 10 , the tie bar 3B can have singulating traces . This is due to the fact that the tie bar 3B is separated, for example , cut or sawn during a singulating process as shown for instance in Figure 7D . In a plane view of the top surface 1A of the carrier 1 , the tie bar 3B is formed as stripe extending laterally from the first subregion 61 or from the second subregion 62 of the carrier 1 . The tie bar 3B usually has a smaller lateral length or width compared to the total length or total width of the first subregion 61 or the second subregion 62 , for example at least 3 , 4 , 5 , 6 or 10 times smaller .
In this disclosure , a step-like element 3C can be understood as an undercut ( German : Hinterschnitt ) of the carrier 1 . At the position of the step-like element 3C, the carrier 1 has a reduced vertical thickness , for instance a reduction from 20 % to 80 % , from 20 % to 70 % , from 20 % to 60 % , from 20 % to 50 % or from 20 % to 40 % of the total thickness of the carrier 1 . Unlike the tie bar 3B, in a plane view of the top surface 1A of the carrier 1 , the step-like element 3C is usually not visible , since it is located below the top surface 1A of the carrier 1 . Below the top surface 1A of the carrier 1 , the step-like element 3C can extend substantially along the entire lateral length or width of the first subregion 61 or the second subregion 62 . The step-like element 3C can be located next to the immediate region 60 between the first subregion 61 and the second subregion 62 . The step-like element 3C can also be located next to the side surface IS of the carrier 1 . I f the carrier 1 is surrounded by the housing body 2 , the step-like element 3C is usually not visible at the side surfaces 10S of the component 10 .
The exemplary embodiment of a component 10 shown in Figure 5B substantially corresponds to the exemplary embodiment of the component 10 shown in Figure 5A when it is shown in top view . As shown in Figure 5B, each of the first subregion 61 and the second subregion 62 of the carrier 1 can comprise several tie bars 3B, here for example six and four tie bars 3B, respectively . The step-like element/ s 3C below the top surface 1A can be present but is/are not shown explicitly in Figure 5B . Usually, the step-like element 3C has a larger lateral width or a larger lateral length than the tie bar 3B . The step-like element 3C can have a larger vertical thickness than the tie bar 3B . The tie bar 3B is configured to connect di f ferent first subregions 61 and/or di f ferent second subregions 62 of di f ferent carrier 1 of di f ferent components 10 during production . The tie bar 3B is usually designed to have small si zes , since in a singulation process for singulating the components 10 , the tie bar 3B is cut through . In combination with Figures 3 and 4 , it is possible that the tie bar 3B is formed by a subregion of the metalli zation 50 . The step-like element 3C may be formed by structuring the insulating substrate 5 , for instance by locally reducing the vertical thickness of the insulating substrate 5 .
The exemplary embodiment of a component 10 shown in Figure 6A substantially corresponds to the exemplary embodiment of the component 10 shown in Figure 2A. In addition to the metal rods 3A, according to Figure 6A and similarly to Figure 5A, the anchoring structure 3 can further comprise tie bars 3B and/or step-like elements 3C . Moreover, in Figure 6A, it is shown explicitly that the cavity 20 is completely filled with the encapsulating layer 82 which is dome-shaped and has the form of a lens . Moreover, it is shown explicitly that the metal rods 3A formed on the bottom surface of the cavity 20 penetrate into the encapsulating layer 82 .
The exemplary embodiment of a component 10 shown in Figure 6B substantially corresponds to the exemplary embodiment of the component 10 shown in Figure 2B . In addition to the metal rods 3A, according to Figure 6B and similarly to Figure 5B, the anchoring structure 3 can further comprise tie bars 3B and/or step-like elements 3C . The component shown in Figure 6B in top view can be the component 10 shown in Figure 6A in sectional view .
Figures 7A to 7D show some method step for producing a plurality of components 10 . The component 10 produced by this method can be any of the components 10 described in this disclosure . For the sake of clari fy, in connection with Figures 7A to 7D, only the production of the components 10 described for instance in Figures 3 , 5A and 5B is show explicitly .
According to Figure 7A, a carrier composite IV is provided . The carrier composite IV comprises a plurality of carriers 1 . Each carrier 1 can comprise at least one first subregion 51 or 61 and at least one second subregion 52 or 62 . One first subregion 51 or 61 can be mechanically connected to one neighboring second subregion 52 or 62 or to another first subregion 51 or 61 by the tie bars 3B . One second subregion 52 or 62 can be mechanically connected to one neighboring first subregion 51 or 61 or to another second subregion 52 or 62 by the tie bars 3B . The first subregions 51 or 61 and second subregions 52 or 62 can be parts of a lead- frame 6 or of a metalli zation 50 formed for instance on an insulating substrate 5 .
A template 9 is arranged or formed on the carrier composite IV . The template 9 comprises a plurality through-holes 9H being nano-holes and/or micro-holes . The distribution of the through-holes 9H can be adapted to the si zes and geometries of the first subregion 51 or 61 , the second subregion 52 or 62 and/or of the tie bars 3B shown in Figure 7B . The template 9 can comprise first subregions 91 and second subregions 92 which are free of the through-holes 9H . Each of the first subregions 91 and/or of the second subregions 92 of the template 9 can be laterally surrounded by the through-holes 9H . Other subregions of the template 9 which in top view do not cover the first subregions 51 or 61 , the second subregions 52 or 62 and/or of the tie bars 3B of the carrier composite IV can also be free of the through-holes 9H . The template 9 can be formed from an electrically insulating material . The template 9 comprising the through-holes 9H can be prefabricated or formed directly on the carrier composite IV, for instance on the top surfaces 1A of the carriers 1 , for example using a photolithographic method . In the latter case , the template 9 can be made from a photostructurable material , for example , from a photo-lithographically passive or active lacquer .
The metal rods 3A can be formed within and/or through the through-holes 9H . The forming of the metal rods 3A can be accomplished in many ways , for example using the capillary action of the through-holes 9H being pores/channels and enabling a solution of a dissolved material entering into the pores , followed by slow evaporation of the solvent . It is also possible to use electrodeposition, where the top surfaces 1A of the carriers 1 are used as an electrode , for instance as a cathode for electroplating . Alternatively, electroless plating can be used, where a catalyst to the walls of the through-holes 9H is applied which facilitates the deposition of metal on the activated pores of the template 9 . The micro- or nanomaterials , which are produced in this way, take the form of wires or tubules . Thus , in general , the metal rods 3A may be wires or tubules .
As shown in Figure 7C, the metal rods 3A are formed in predetermined positions on the carrier composite IV or on the carriers 1 . The step of forming the housing body 2 can be followed by the step of forming the metal rods 3A or the step of forming the anchoring structure 3 . For example , before the housing body 2 is formed, the template 9 is removed . Semiconductor chips 4 , for instance first semiconductor chips 41 and/or second semiconductor chips 42 can be arranged on the predetermined positions of the first subregions 51 or 61 and/or the second subregion 52 or 62 of the carriers 1 . In lateral directions , the each of the semiconductor chips 4 can be partly or completely surrounded by the metal rods 3A.
Moreover, before or during the housing body 2 is formed, the semiconductor chips 4 can be electrically connected to one further first or second subregion 51 , 61 , 52 or 62 of the corresponding carrier 1 by forming bonding wires 7 , for instance by forming first bonding wires 71 and/or second bonding wires 72 .
The step of forming the housing body 2 can be carried out by a molding or casting process , wherein a molding material is applied in places on the metal rods 3A so that the metal rods 3A penetrate into the housing body 2 before the molding material is cured . Thus , the housing body 2 is formed at least in places on the carrier composite IV or on the carriers 1 . Here , the housing body 2 is made from an electrically insulating material and is mechanically fixed to the top surfaces 1A being electrically conductive surfaces 1A of the carriers 1 such that the metal rods 3A penetrate into the housing body 2 for enhancing a mechanical connection between the carriers 1 and the housing body 2 .
According to Figure 7D, the components 10 can be singulated along singulating lines 9L . In top view, the singulating lines 9L cross the tie bars 3B . Thus , the tie bars 3B can be cut through . Along the singulating lines 9L, side surfaces 10S of the components 10 or side surfaces IS of the carriers 1 are formed . Thus , the tie bars 3B can be visible at the side surfaces IS or 10S as shown for instance in Figures 5A to 6B . On the side surfaces IS or 10S , the tie bars 3B can have singulating traces , for instance mechanical traces from a sawing process .
As described in this disclosure , the metal rods 3A can be used for anchoring the housing body 2 and/or an encapsulating layer 82 to the carrier 1 , in particular to a metallic top surface 1A of the carrier 1 . Both the topology as well as the materials of the top surface 1A are thus largely freely selectable and the ef fective surface area for adhesion is enlarged . Possible material for the metal rods 3A can be Cu, Au, Ag, Pt , Ni , Sn etc . In the case that the housing body 2 is an epoxy mold compound, EMC, copper, for example , is a very suitable material for the metal rods 3A due to high adhesion properties of copper .
The geometry and placement of the metal rods 3A can be defined in many ways , for instance using a prefabricated template 9 or can be defined via a photo step on the carriers 1 . The distribution of the metal rods 3A can therefore be defined very exactly and finely . Moreover, the distribution of the metal rods 3A can be predefined in a simpli fied manner i f photolithographic definition of the subregions with metal rods 3A is combined with films whose ion track etched channels determine diameter and density of the metal rods 3A.
The use of metal rods technology in anchoring a housing body, which can be an inj ection molded body, on a substrate or a lead- frame is advantageous in many respects .
For example , the position of the metal rods 3A is well defined, so that even when possible cavities are molded, there is no collision with the molding process , since the molding surfaces remain free during the molding process , for example during inj ection molding .
The mounting areas used for attaching the semiconductor chips and for wire bonding can be left small . The risks that the semiconductor chips 4 and/or the bonding wires 7 may be detached when great thermomechanical stress occurs can be signi ficantly reduced .
The si zes the metal rods 3A and/or the spacing or density of the metal rods 3A can be adapted to the si zes of filling particles which may be embedded within the housing body 2 and/or within the encapsulating layer 82 . For example , lateral distances between the metal rods 3A can be larger or smaller than the si zes or diameters of the filling particles .
Using the metal rods 3A, the requirements for GTE ( coef ficient of thermal expansion) matching of the housing body 2 and/or of the encapsulating layer 82 to the carrier 1 can be reduced . It may therefore be possible to use clear or transparent material for housing body 2 and/or for the encapsulating layer 82 .
For example , in the case that the housing body 2 is a molded body, the mold fit of the molded body around the main body of the carrier 1 , for example of the lead- frame 6 , can become much tighter, which reduces or simpli fies the so-called deflashing process when cavities are molded . Problems such as seepage of casting materials in general and seepage of solder flux or similar low viscose materials , for example silicone seepage , due to gaps between lead- frame 6 and the molded body are eliminated or at least signi ficantly reduced . The deflashing process gets necessary due to leakage of the pressuri zed liquid mold compound during the molding process for example between the housing body 2 in liquid aggregate state and the top surface 1A.
As mentioned above , the metal rods 3A are also an ef fective anchorage not only for the housing body 2 , which can be formed by inj ection molding, but also for other materials and can therefore be used for anchoring the encapsulating layer 82 for instance in form of clear potting or lenses , such as silicone lenses , which can be produced by compression molding or dispensing .
In addition to the mechanical connection, the metal rods 3A also improve the thermal coupling and thus help to dissipate heat losses more ef fectively . Without the presence of the metal rods 3A, the GTE transition between the epoxy mold compound, EMC, and the carrier 1 can be extremely sharp, for example from epoxy mold compound to Cu . By molding in the metal rods 3A being micro-wires and/or nano-wires , the CTE transition becomes smooth, as a result of which the thermomechanical reliability is signi ficantly improved .
Thus , the encapsulated metal rods 3A reduce the CTE of the nano-wires and/or nano-wires EMC compound . The EMC material itsel f no longer needs to be precisely matched to the carrier 1 in terms of CTE , even without the use of inorganic fillers , for instance of SiO2 particles . This allows the processing of more fillable EMC with less inorganic fillers . The housing body 2 or the cured EMC is thus more ductile which further increases the stability of the component 10 . The encapsulated metal rods 3A also provide stress absorption and increase the mechanical stability of the component 10 . The component 10 can be a LED package with the housing body 2 being for instance an inj ection molded body . Thus , the component 10 can be a pre-mold package , a QFN package or FAM package , which has a good anchorage of the housing body on the carrier 1 comprising for instance a lead- frame , ceramic substrate or a PCB . I f the adhesion of the materials of the housing body 2 , for instance epoxy or silicone or hybrids , is rather poor on metal surfaces , an additional mechanical anchoring is also possible , for example by using further anchoring structures like undercuts in form of step-like elements 3C or tie bars 3B in the carrier 1 . Particularly in the case of small-si zed components 10 , for instance of smallsi zed LED packages , however, i f there is no or only small space available for this purpose , the use of only the metal rods 3A may also be suf ficient for achieving a highly stable component 10 .
This application claims the priority of the German patent application 10 2022 117 093 . 4 , the disclosure content of which is hereby included by reference .
The invention is not restricted to the exemplary embodiments by the description of the invention made with reference to the exemplary embodiments . The invention rather comprises any novel feature and any combination of features , including in particular any combination of features in the claims , even i f this feature or this combination is not itsel f explicitly indicated in the patent claims or exemplary embodiments . References
10 component
10A top surface of the component
10B bottom surface of the component
10S side surface of the component
1 carrier
1A top surface of the carrier/ electrically conductive surface of the carrier
IS side surface of the carrier
IV carrier composite
2 housing body
20 cavity of the housing body
3 anchoring structure
3A metal rod
3B tie bar
3C step-like element
4 semiconductor chip
41 first semiconductor chip
42 second semiconductor chip
5 insulating substrate
50 metalli zation
51 first subregion of the metalli zation/ of the carrier
52 second subregion of the metalli zation/ of the carrier
6 lead- frame
61 first subregion of the lead- frame/ of the carrier
62 second subregion of the lead- frame/ of the carrier 60 intermediate region
7 bonding wire
71 first bonding wire 72 second bonding wire
81 phosphor layer
82 encapsulating layer 9 template
91 first subregion of the template
92 second subregion of the template
9H through-hole of the template 9L singulating line

Claims

Claims
1. A component (10) comprising a carrier (1) and a housing body (2) , wherein
- the carrier (1) comprises an electrically conductive surface ( 1A) ,
- the housing body (2) is electrically insulating and is mechanically fixed to the electrically conductive surface (1A) of the carrier (1) ,
- a mechanical connection between the carrier (1) and the housing body (2) is enhanced by an anchoring structure
( 3 ) , and
- the anchoring structure (3) comprises metal rods (3A) penetrating into the housing body (2) , wherein the metal rods (3A) are nano-rods and/or micro-rods and are distributed meadow-like in places on the electrically conductive surface (1A) of the carrier (1) .
2. The component (10) according to claim 1, wherein the metal rods (3A) have lateral diameters from 30 nm to 20 pm.
3. The component (10) according to any of preceding claims, wherein the metal rods (3A) have vertical heights from 2 pm to 100 pm.
4. The component (10) according to any of claims 1 to 3, wherein the housing body (2) is a molded body.
5. The component (10) according to any of claims 1 to 4, wherein the carrier (1) is a lead-frame (6) made of an electrically conductive material and the electrically conductive surface (1A) is a surface of the lead-frame (6) .
6. The component (10) according to claim 5, wherein
- the lead-frame (6) comprises a first subregion (61) and a second subregion (62) spaced apart from the first subregion ( 61 ) ,
- the first subregion (61) and the second subregion (62) are laterally surrounded by the housing body (2) and thus are mechanically connected to each other by the housing body
( 2 ) , and
- along a vertical direction, the first subregion (61) and/or the second subregion (62) extend at least in places through the housing body (2) .
7. The component (10) according to any of claims 1 to 4, wherein the carrier (1) comprises an insulating substrate (5) and a metallization, wherein the electrically conductive surface (1A) is a surface of the metallization.
8. The component (10) according to any of claims 1 to 7, further comprising a first semiconductor chip (4, 41) , wherein the first semiconductor chip (4, 41) is arranged on first subregion of the electrically conductive surface (1A) , said first subregion not being covered by the metal rods (3A) .
9. The component (10) according to claim 8, further comprising a second semiconductor chip (4, 42) , wherein the second semiconductor chip (4, 42) is arranged on another region of the electrically conductive surface (1A) not being covered by the metal rods (3A) , and wherein the second semiconductor chip (4, 42) is electrically connected to the first semiconductor chip (4, 41) in an antiparallel manner .
10. The component (10) according to any of claims 1 to 9, wherein the anchoring structure (3) further comprises tie bars (3B) which are lateral parts of the carrier (1) , have a smallest vertical thickness of the carrier (1) and are surrounded by the housing body (2) in such a way that on side surfaces (10S) of the component (10) , they are flush with the housing body (2) .
11. The component (10) according to any of claims 1 to 10, wherein the anchoring structure (3) further comprises steplike elements (3, 3C) formed by side surfaces (IS) of the carrier (1) , wherein the housing body (2) is anchored to the step-like elements (3, 3C) and is prevented from being detached from the carrier (1) along a vertical direction.
12. The component (10) according to any of claims 1 to 11, which further comprises an encapsulating layer (82) , wherein the encapsulating layer (82) is formed in an opening of the housing body (2) and is anchored to the metal rods (3A) .
13. A method for producing a component (10) having a carrier (1) and a housing body (2) , comprising:
- forming an anchoring structure (3) on an electrically conductive surface (1A) of the carrier (1) , wherein the anchoring structure (3) comprises metal rods (3A) being nano-rods and/or micro-rods which are distributed meadowlike in places on the electrically conductive surface (1A) of the carrier (1) ; and
- forming the housing body (2) at least in places on the carrier (1) , wherein the housing body (2) is made from an electrically insulating material and is mechanically fixed to the electrically conductive surface (1A) of the carrier (1) such that the metal rods (3A) penetrate into the housing body (2) for enhancing a mechanical connection between the carrier (1) and the housing body (2) .
14. The method according to claim 13, wherein the step of forming the anchoring structure (3) on the electrically conductive surface (1A) of the carrier (1) is carried out by using a template (9) comprising a plurality through-holes (9H) being nano-holes and/or micro-holes, wherein the template (9) is prefabricated and is arranged on the electrically conductive surface (1A) of the carrier (1) , wherein and the metal rods (3A) are formed within the through-holes (9H) .
15. The method according to claim 13, wherein the forming of the anchoring structure (3) on the electrically conductive surface (1A) of the carrier (1) comprises steps of: forming a template (9) having a plurality through-holes (9H) being nano-holes and/or micro-holes on the electrically conductive surface (1A) by using a photolithographic process; and forming the metal rods (3A) in the through-holes (9H) .
16. The method according to any of claims 13 to 15, wherein
- the step of forming the housing body (2) is followed by the step of forming the anchoring structure (3) ,
- the step of forming the housing body (2) is carried out by a molding process or casting process, wherein a molding material is applied in places on the metal rods (3A) so that the metal rods (3A) penetrate into the housing body (2) before the molding material is cured.
PCT/EP2023/067450 2022-07-08 2023-06-27 Component having anchoring structure and method for producing a component having anchoring structure WO2024008513A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102022117093 2022-07-08
DE102022117093.4 2022-07-08

Publications (1)

Publication Number Publication Date
WO2024008513A1 true WO2024008513A1 (en) 2024-01-11

Family

ID=87067056

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2023/067450 WO2024008513A1 (en) 2022-07-08 2023-06-27 Component having anchoring structure and method for producing a component having anchoring structure

Country Status (1)

Country Link
WO (1) WO2024008513A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140264426A1 (en) * 2013-03-14 2014-09-18 Nichia Corporation Light emitting device mount, light emitting apparatus including the same, and leadframe
US10115869B2 (en) * 2013-10-18 2018-10-30 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip, optoelectronic component and method for singulating semiconductor chips
US20210020459A1 (en) * 2019-07-16 2021-01-21 Advanced Micro Devices, Inc. Molded chip package with anchor structures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140264426A1 (en) * 2013-03-14 2014-09-18 Nichia Corporation Light emitting device mount, light emitting apparatus including the same, and leadframe
US10115869B2 (en) * 2013-10-18 2018-10-30 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip, optoelectronic component and method for singulating semiconductor chips
US20210020459A1 (en) * 2019-07-16 2021-01-21 Advanced Micro Devices, Inc. Molded chip package with anchor structures

Similar Documents

Publication Publication Date Title
US11984545B2 (en) Method of manufacturing a light emitting device
TWI257692B (en) Leadframe-based component-housing, leadframe-band, surface-mountable electronic component and its production method
US9537065B2 (en) Light-emitting device with reflective resin
EP2605276B1 (en) Packaged leadless semiconductor device
CN106663659B (en) Surface mountable semiconductor device and method of manufacturing the same
KR101843402B1 (en) Surface-mountable optoelectronic component and method for producing a surface-mountable optoelectronic component
US8610134B2 (en) LED package with flexible polyimide circuit and method of manufacturing LED package
JP6336105B2 (en) Manufacturing of optoelectronic components
US20090212316A1 (en) Surface-mounted optoelectronic semiconductor component and method for the production thereof
CN111448673A (en) Production of optoelectronic components
KR101176672B1 (en) Radiation-emitting or radiation-receiving semiconductor component and method for the production thereof
KR20150109367A (en) Method for producing a plurality of optoelectronic components, and optoelectronic component
EP2228843B1 (en) Light emitting device package
CN110710070B (en) Semiconductor laser device and method for manufacturing semiconductor laser device
CN116210095A (en) Optoelectronic semiconductor component and method for producing same
KR101444919B1 (en) Method for manufacturing metallic reflector for led package
WO2024008513A1 (en) Component having anchoring structure and method for producing a component having anchoring structure
US10964637B2 (en) Package and light emitting device
TW202420510A (en) Component having anchoring structure and method for producing a component having anchoring structure
CN110635015A (en) Package, light emitting device, and method of manufacturing the same
WO2024000267A1 (en) Method for producing at least one optoelectronic device and optoelectronic device
WO2023241864A1 (en) Method for producing a radiation emitting semiconductor device and radiation emitting semiconductor device
JP7140956B2 (en) Light-emitting device, package and manufacturing method thereof
CN114270505A (en) Lead frame composite, method for producing a plurality of components and component

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23736041

Country of ref document: EP

Kind code of ref document: A1