TW201428865A - 金屬芯錫球及利用它的半導體裝置的散熱連接結構 - Google Patents

金屬芯錫球及利用它的半導體裝置的散熱連接結構 Download PDF

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TW201428865A
TW201428865A TW102140544A TW102140544A TW201428865A TW 201428865 A TW201428865 A TW 201428865A TW 102140544 A TW102140544 A TW 102140544A TW 102140544 A TW102140544 A TW 102140544A TW 201428865 A TW201428865 A TW 201428865A
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Taiwan
Prior art keywords
metal core
plating layer
solder ball
semiconductor device
thermal conductivity
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TW102140544A
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English (en)
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TWI578418B (zh
Inventor
Yong-Cheol Chu
Hyun-Kyu Lee
Jung-Ug Kwak
Seung-Jin Lee
Sang-Ho Jeon
Yong-Sik Choi
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Duksan High Metal Co Ltd
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Publication of TW201428865A publication Critical patent/TW201428865A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
    • B23K35/282—Zn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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    • B23K35/286—Al as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • H—ELECTRICITY
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Abstract

本發明係關於一種金屬芯錫球，其包括：金屬芯，直徑為40到600μm；第一電鍍層，圍繞上述金屬芯外面；第二電鍍層，圍繞上述第一電鍍層的外面；該錫球能改善導熱度。

Description

金屬芯錫球及利用它的半導體裝置的散熱連接結構
本發明係關於一種金屬芯錫球及利用它的半導體裝置的散熱連接結構。
下一代高密度封裝由於貼裝密度增加而使用晶片級封裝(CSP)或球形触點陣列(BGA)貼裝，為了讓晶片與基板形成電連接而通常使用錫球(solder ball)。
使用錫球時如何確保電極可靠性是一個重大課題，為此，人們開發了替代現有錫球的金屬芯錫球并予以商用化，該金屬芯錫球在內芯使用金屬而在外部形成焊料層(solder layer)。金屬芯錫球在覆晶接合時內部的芯球不在回焊(reflow)溫度熔融，能夠維持晶片與印刷電路板(PCB)的距離而得到較高的接合可靠性。
另一方面，近來由於晶片上密集了眾多的電路而使得如何將半導體裝置所生成的高熱排放到外部成了重要課題。現有技術通常採取了在半導體裝置側安裝散熱片(heat sink)後進行散熱的結構。此時，在散熱片 與半導體裝置之間的界面插入TIM(Thermal Interface Material)而得以將半導體裝置的熱有效地排放到散熱片側。
然而，卻沒有試圖將半導體裝置所生成的熱排放到基板側。這是因為，基板側具有較多的電子元件而如果將熱排放到基板方向時容易對電子元件造成影響或者與連接基板與半導體裝置的錫球的導熱性有關，但人們對此研究不足。
本發明的技術課題為，在半導體裝置與基板之間利用導熱性較高的金屬芯錫球賦予半導體裝置與基板之間的連接可靠性，還能有效地排放半導體裝置所生成的熱。
本發明提供一種金屬芯錫球，該錫球包括：金屬芯，直徑為40到600μm；第一電鍍層，圍繞上述金屬芯外面；第二電鍍層，圍繞上述第一電鍍層的外面；并且滿足下述式1。
[式1]1/6a<aA+bB+cC<2/3a
(此時，a為金屬芯的導熱度，b為第一電鍍層的導熱度，c為第二電鍍層的導熱度，A、B、C各為錫球中金屬芯、第一電鍍層及第二電鍍層所佔體積比，A+B+C=1，0.0005<B<0.05，0.7<C<0.94，A、B、C為0與1之間的實數)
此時，上述金屬芯為選自銅(Cu)、銀(Ag)、金(Au)及鋁(Al) 所構成的群之金屬者較佳。
此時，上述第一電鍍層係以化學鍍形成鎳(Ni)或含有鎳的合金者較佳。
而且，上述第二電鍍層係以電解電鍍實現含有錫(Sn)的合金者較佳。
本發明還提供一種含有前述金屬芯錫球的半導體裝置的散熱連接結構。
此時，上述半導體裝置的散熱連接結構中，上述金屬芯錫球把上述半導體裝置的連接端子與基板的電極之間予以連接。
此時，在上述錫球連接上述電極的連接部中包含黃銅粉或銀粉者較佳。
本發明還提供一種電子裝置，其包括：半導體裝置的連接端子；基板的電極，與上述連接端子相向；及錫球，讓上述連接端子與上述基板的電極之間形成熱及電連接，滿足下述式1[式1]1/6a<aA+bB+cC<2/3a
(此時，a為金屬芯的導熱度，b為第一電鍍層的導熱度，c為第二電鍍層的導熱度，A、B、C各為錫球中金屬芯、第一電鍍層及第二電鍍層所佔體積比，A+B+C=1，0.0005<B<0.05，0.7<C<0.94，A、B、C為整體錫球中1與1之間的實數)。
此時，上述基板的電極與上述錫球之間具備接合部，該接合部包含黃銅粉或銀粉者較佳。
本發明金屬芯錫球及利用它的半導體裝置的散熱連接結構使用內部導熱度被設計成較高值的金屬芯錫球而得以同時實現高接合可靠性與散熱性。
110‧‧‧連接端子
111‧‧‧銅墊片(cupper pad)
150‧‧‧基板電極
130‧‧‧錫球
140‧‧‧接合部
141‧‧‧黃銅粉
圖1為本案較佳實施例之基板的電極之錫球基底形成接合部示意圖。
圖2為本案較佳實施例之掉落衝擊結果曲線。
圖3為本案較佳實施例之顯示實施例1與比較例1之銅層及焊料層。
下面詳細說明本發明的較佳實施例。第一、第二之類的術語可以在說明各種構成要素時使用，但不得把所述構成要素局限於所述術語。所述術語的使用目的僅在於使構成要素與其它構成要素區分開來。本申請中使用的“包括”等術語只是指定說明書上記載的特徵、步驟、或它們的組合之存在，不得視為事先排除了一個或一個以上的其它特徵、步驟、或它們的組合的存在或附加可能性之存在。除非另外給予不同定義，否則此處所使用的包括技術或科學術語在內的一切術語所表示的意義和本發明所屬技術領域中具有一般知識的人們通常了解的意義相同。
金屬芯錫球
本發明一實施例的金屬芯錫球包括金屬芯、第一電鍍層及第二電鍍層。
構成金屬芯的材料可以使用銅(Cu)粉、銀(Ag)粉、金(Au)粉及鋁(Al)粉等。此時，金屬芯的導熱度為350~450W/mk者較佳。
金屬芯使用直徑40至600μm者較佳，使用平均直徑40至250μm者更佳。
在本說明書中，金屬芯通常是球形而粒子尺寸則表示其直徑，但如果各粒子不是完整的球形，粒子尺寸則定義為經過粒子內部的最長線段的長度與最短線段的長度的平均值。各粒子接近球形時粒子尺寸將近似於球的直徑值。
在金屬芯的外周面具備第一電鍍層。第一電鍍層的作用在於，控制2種金屬所接合的境界面上生成的介金屬化合物，防止憑借原子擴散而沿著介金屬化合物形成的克肯達孔洞(Kirkendall void)擴散，該層形成為0.1到5μm的厚度，以0.5到2um較佳。
第一電鍍層以體積相對於整體錫球體積為0.05到5%者較佳。低於0.1時將無法防止克肯達孔洞(Kirkendall void)并且無法控制介金屬化合物(Intermetallic compound)的生長，超過5%時則將改變接合層的結構而使得可靠性降低。
第一電鍍層由鎳(Ni)或含有鎳的合金構成較佳。尤其是，為了針對克肯達孔洞(Kirkendall void)的形成及回焊(Reflow)後形成的接合層的厚度進行控制，使用鎳與銀的合金較佳。第一電鍍層的導熱度為 80~100W/mK者較佳。
第二電鍍層形成於第一電鍍層的外周面，可以使用Sn及作為含有Sn的合金的SnAg、SnAgCu、SnCu、SnZn、SnMg、SnAl等。單獨使用Sn時，由於熔點上昇而導致回焊峰值溫度(Reflow peak temperature)上昇并縮短其它元件的壽命，因此添加Ag、Cu等元素以降低熔點較佳。第二電鍍層的厚度為10到50μm，體積相對於整體錫球體積為70%到94%者較佳。低於70%時與焊墊(Pad)的反應性下降而生成掉球(missing ball)，超過94%時第二電鍍層上可能會生成孔洞(void)并導致導熱度、掉落衝擊性能及熱衝擊性能降低。
此時，第二電鍍層的導熱度為60~80W/mK者較佳。
前述金屬芯、第一電鍍層、第二電鍍層考慮了連接可靠度與導熱度，與導電不同的是，由於熱傳導貫穿整體錫球地流動，因此增加導電度較高的芯與第二電鍍層的厚度，第二電鍍層則使用導熱度較高的金屬較佳。
因此，本發明實施例的錫球被製成滿足下述式1。因此能夠同時滿足導熱度與連接可靠度。
[式1]1/6a<aA+bB+cC<2/3a
(此時，a為金屬芯的導熱度，b為第一電鍍層的導熱度，c為第二電鍍層的導熱度，A、B、C各為錫球中金屬芯、第一電鍍層及第二電鍍層所佔體積比，A+B+C=1，0.0005<B<0.05，0.7<C<0.94，A、B、C為整 體錫球中1與1之間的實數)
製成前述金屬芯錫球時，不僅可以確保連接可靠度，還能讓錫球的導熱度相比於使用一般錫球者增加5倍以上。
金屬芯錫球的製造
金屬芯錫球的製造包括金屬芯供應步驟、第一電鍍層形成步驟、第二電鍍層形成步驟。
在金屬芯供應步驟中，金屬芯由熔融的鎔湯透過洞孔製成具備所需尺寸的平均直徑40到600μm。金屬芯的材料可以使用銅(Cu)粉、銀(Ag)粉、金(Au)粉、鎳(Ni)粉及鋁(Al)粉等。
透過高頻感應爐感應加熱金屬芯材料金屬使其熔化後，利用振盪器透過一定洞孔製成所需直徑。此時，所需尺寸可以透過頻率與壓力予以調整。
在第一電鍍層形成步驟中，把製成的銅芯酸洗後利用鈀(Pd)溶液將鈀種子(Pd seed)附着到經過蝕刻的表面，然後利用稀硫酸溶液予以活性化(activation)，然後把經過蒸熱的第一電鍍液的材料裝到化學鍍液予以攪拌。化學鍍在反應結束為止持續攪拌。雖然根據裝入量與化學鍍液的濃度及量而有較大差異，但通常在反應開始後使其充分地反應1~2小時左右。
第一電鍍液的材料可以使用鎳(Ni)、Ni-P，Ni-B，Co等。
在第二電鍍層形成步驟中，在形成了第一電鍍層的金屬芯的表面電解含有Sn的金屬而形成電鍍層。電解則把金屬芯放進桶內并且在陽極掛需要電鍍的金屬而被電鍍體則掛上桶內陰極後進行電解電鍍。此時，溫度維持20~30℃。電鍍則根據尺寸而進行適當時間。
第二電鍍液的材料可以使用含有Sn的合金，即SnAg、SnAgCu、SnCu、SnZn、SnMg、SnAl等。
半導體散熱連接結構
本發明所提供的半導體裝置的散熱連接結構使用金屬芯錫球，其包括金屬芯錫球，該金屬芯錫球配置在半導體裝置的連接端子和相向於半導體裝置的連接端子的基板的電極之間，讓連接端子與焊墊形成熱及電連接。
半導體裝置的連接端子在銅墊片通常形成Ni/Au電鍍層，但不限定於此。金屬芯錫球隨著第二電鍍層被加熱而熔融并形成介金屬化合物後粘結在連接端子。附着了金屬芯錫球的半導體裝置則附着在基板的電極。
基板的電極通常由銅形成，但不限定於此。此時，銅表面為了防止氧化而實行OSP(organic solder-ability preservative)處理者較佳。
在基板的電極上塗敷焊膏(solder paste)而得以隨著加熱而將電極與金屬芯錫球加以附着。焊膏由助焊劑與導電粒子構成，助焊劑(flux)清除形成於金屬芯錫球表面的氧化膜而增加反應性，使得焊膏所含導電粒子與金屬芯錫球進行反應而得以形成與電極之間的接合部。此時，焊膏為了提高導熱性而包含黃銅、銀之類的金屬粉末者較佳，此時所含粉末的粒子為3~15um以內的粒子者較佳。
金屬芯錫球的製造
下面結合實施例及比較例詳細說明本發明的金屬芯錫球較佳實施例，但不得因此以任何形態限定或限制本發明。
實施例1 金屬芯錫球的製造
在實施例1中，透過高頻感應爐感應加熱銅使其熔化後，利用振盪器透過一定洞孔製成直徑40μm的銅芯。此時，頻率為200Hz，壓力為10bar。
把製成的銅芯酸洗後利用鈀(Pd)溶液將鈀種子(Pd seed)附着到經過蝕刻的表面，然後利用15%濃度的稀硫酸溶液予以活性化(activation)，然後裝到經過蒸熱的鎳化學鍍液，然後攪拌到反應結束為止。
此時，銅芯的裝入量為10g，鎳電鍍液的pH濃度為4-6，以化學鍍鎳電鍍液整體體積的1/2量將反應一直進行到反應結束為止。
之後，反應1小時左右而形成厚1μm左右、體積相對於整體芯錫球體積為0.01%的第一電鍍層。
把形成了第一電鍍層的銅芯放入桶內，在陽極掛Sn-Ag而在金屬芯掛陰極後進行電解電鍍。此時，溫度維持20~30℃。電解電鍍以1A/dm的電流密度電鍍3小時而形成偏側厚度為3μm、體積相對於整體芯錫球體積為90%的第二電鍍層，從而製成金屬芯錫球。
實施例2 金屬芯錫球的製造
在實施例2中，透過高頻感應爐對感應加熱銅使其熔化後，利用振盪器(oscillator)透過一定洞孔製成直徑60um的銅芯。此時，頻率為180Hz，壓力為8bar。
把製成的銅芯酸洗後利用鈀(Pd)溶液將鈀種子(Pd seed)附着到蝕刻的表面，然後15%濃度的稀硫酸溶液予以活性化(activation)，然後裝到經過蒸熱的鎳化學鍍液，然後攪拌到反應結束為止。
此時，銅芯的裝入量為40g，鎳電鍍液的pH濃度為4-6，以化學鍍鎳電鍍液整體體積的1/2量將反應一直進行到反應結束為止。
之後，反應1小時左右而形成厚1μm左右、體積相對於整體芯錫球體積為0.003%的第一電鍍層。
把形成了第一電鍍層的銅芯放入桶內，在陽極掛Sn-Ag而在金屬芯掛陰極後進行電解電鍍。此時，溫度維持20~30℃。電解電鍍以1A/dm的電流密度電鍍3小時而形成偏側厚度為30μm、體積相對於整體芯錫球體積為84%的第二電鍍層，從而製成銅芯錫球。
實施例3 金屬芯錫球的製造
在實施例3中，透過高頻感應爐對感應加熱銅使其熔化後，利用振盪器透過一定洞孔製成直徑100um的銅芯。此時，頻率為150Hz，壓力為5bar。
把製成的銅芯酸洗後利用鈀(Pd)溶液將鈀種子(Pd seed)附着到蝕刻的表面，然後15%濃度的稀硫酸溶液予以活性化(activation)，然後裝到經過蒸熱的鎳化學鍍液，然後攪拌到反應結束為止。
此時，銅芯的裝入量為180g，鎳電鍍液的pH濃度為4-6，以化學鍍鎳電鍍液整體體積的1/2量將反應一直進行到反應結束為止。
之後，反應1小時左右而形成厚1μm左右、體積相對於整體芯錫球體積為0.00075%的第一電鍍層。
把形成了第一電鍍層的銅芯放入桶內，在陽極掛Sn-Ag而在銅芯掛陰極後進行電解電鍍。此時，溫度維持20~30℃。電解電鍍以1A/dm的電流密度電鍍3小時而形成偏側厚度為30μm、體積相對於整體芯錫球體積 為71%的第二電鍍層，從而製成銅芯錫球。
比較例1 錫球的製造
在微錫球的製造上，透過60μm洞孔利用振盪器對熔融焊料(solder)施加一定振動并使其通過洞孔而製成直徑100μm的Sn3.0Ag 0.5Cu錫球。此時，壓力為施加到鎔湯的壓力，施加3bar左右的壓力并且把頻率調整到7KHz的頻率後製造。
比較例2 金屬芯錫球的製造
在比較例2中，透過高頻感應爐對感應加熱銅使其熔化後，利用振盪器透過一定洞孔製成直徑40um的銅芯。此時，頻率為200Hz，壓力為10bar。
把製成的銅芯酸洗後利用鈀(Pd)溶液將鈀種子(Pd seed)附着到蝕刻的表面，然後15%濃度的稀硫酸溶液予以活性化(activation)，然後裝到經過蒸熱的鎳化學鍍液，然後攪拌到反應結束為止。
此時，銅芯的裝入量為10g，鎳電鍍液的pH濃度為4-6，以化學鍍鎳電鍍液整體體積的1/10的量將反應一直進行到反應結束為止。
之後，反應1小時左右而形成厚1μm左右、體積相對於整體芯錫球體積為0.01%的第一電鍍層。
把形成了第一電鍍層的銅芯放入桶內，在陽極掛Sn-Ag而在金屬芯掛陰極後進行電解電鍍。此時，溫度維持20~30℃。電解電鍍以1A/dm的電流密度電鍍3小時而形成偏側厚度為40μm、體積相對於整體芯錫球體積為95%的第二電鍍層，從而製成銅芯錫球。
比較例3 金屬芯錫球的製造
在比較例3中，透過高頻感應爐對感應加熱銅使其熔化後，利用振盪器透過一定洞孔製成直徑40um的銅芯。此時，頻率為200Hz，壓力為10bar。
把製成的銅芯酸洗後利用鈀(Pd)溶液將鈀種子(Pd seed)附着到蝕刻的表面，然後15%濃度的稀硫酸溶液予以活性化(activation)，然後裝到經過蒸熱的鈷化學鍍液後，一直攪拌到反應結束為止。
此時，銅芯的裝入量為10g，鈷電鍍液的pH濃度為9-10，以化學鍍鈷電鍍液整體體積的1/2量將反應一直進行到反應結束為止。
之後，反應1小時左右而形成厚1μm左右、體積相對於整體芯錫球體積為0.01%的第一電鍍層。
把形成了第一電鍍層的銅芯放入桶內，在陽極掛Sn-Pb而在銅芯掛陰極後進行電解電鍍。此時，溫度維持20~30℃。電解電鍍以1A/dm的電流密度電鍍3小時而形成偏側厚度為40um、體積相對於整體芯錫球體積為96%的第二電鍍層，從而製成銅芯錫球。
表1整理了實施例1至3及比較例1至3的數據。
實施例4至實施例6 半導體裝置的散熱連接結構
把實施例1至3的金屬芯錫球化熱附着到半導體裝置的連接 端子後，再連接到基板的電極之間。半導體裝置的連接端子(110)在銅墊片(111)上形成Ni/Au電鍍層(112、113)，基板的電極(150)則由銅形成。
此時，基板的電極(150)上所塗敷的含黃銅粉的焊膏熔融而在錫球(130)基底形成接合部(140)，接合部(140)則含有黃銅粉(141)(請參閱圖1)。
比較例4至比較例6 半導體裝置的散熱連接結構
把比較例1至3的錫球加熱附着到半導體裝置的連接端子後，再連接到基板的電極之間。半導體裝置的連接端子在銅墊片上形成Ni/Au電鍍層，基板的電極由銅形成。
此時，基板的電極上所塗敷的焊膏與錫球(比較例4)或錫球的第二電鍍層(比較例5、6)熔融而在錫球基底形成接合部。
實驗例
實驗例1 接合強度及導熱度
為了評估所製成的金屬芯實施例及比較例的錫球接合強度而連接到銅墊片電極。根據所連接的產品進行了剪切評估。
剪切力測量設備使用dage公司製造的dage4000設備，評估條件如下，測試速度(test speed)為200um/s，剪切高度(shear height)為50um。適用於評估的球(ball)數量為20個并求取平均值。
而且，導熱度使用雷射閃光法測量，把雷射投射到小圓板型盤狀材料的一側面加熱，利用紅外線傳感器測量了熱量被傳達到相反側所花費的時間。導熱度測量設備使用NERZCH公司製造的LAF457設備，以10C/min的升溫速度進行了測量。
表2整理了所測量的實施例及比較例的接合強度及導熱度。根據該表可知，本發明的實施例同時具有良好的接合強度及導熱度。
實驗例2 掉落衝擊實驗
在OSP(P)-OSP(B)焊接金屬芯球及錫球後進行了掉落衝擊試驗。設備使用LAB公司製造的SD10型號，圖2是掉落衝擊結果曲線，按照 15unit製造4個板(boards)(共60unit)并且把掉落衝擊後(掉落衝擊條件為1,500G 400 drop)的結果以weibull分布顯示。表3整理了1%、5%、10%、63.2%失敗(failure)的預測結果。
實驗例3 Kirkendall void的觀察
為了觀察Kirkendall void而把實施例1與比較例1各自連接到電極焊墊(pad)後進行熱處理并觀察接合層後圖示在圖2。根據圖2所示，一般錫球的熱處理時間越增加kirkendall void的生成越增加，但金屬芯錫球則由於形成了第一電鍍層而相比一般錫球較能控制kirkendall void的生成。
以上僅是藉由較佳實施例詳細說明本發明。在本發明所屬技術領域具備通常知識者在不脫離本發明之精神的範圍下進行修改與變化，因此上述之較佳實施例不能限制本發明的範疇，只是籍由較佳實施例詳細 說明本發明。本發明的範疇屬於專利請求範圍而不受前述說明限制，對於該實施例所做的任何簡單修改與變化皆不脫離本發明之精神與範圍。
110‧‧‧連接端子
111‧‧‧銅墊片(cupper pad)
150‧‧‧基板電極
130‧‧‧錫球
140‧‧‧接合部
141‧‧‧黃銅粉

Claims (9)

  1. 一種金屬芯錫球，其包括：金屬芯，直徑為40到600μm；第一電鍍層，圍繞上述金屬芯外面；第二電鍍層，圍繞上述第一電鍍層的外面；滿足下述式1：[式1]1/6a<aA+bB+cC<2/3a其中，a為金屬芯的導熱度，b為第一電鍍層的導熱度，c為第二電鍍層的導熱度，A、B、C各為錫球中金屬芯、第一電鍍層及第二電鍍層所佔體積比，A+B+C=1，0.0005<B<0.05，0.7<C<0.94，A、B、C為整體錫球中1與1之間的實數。
  2. 如申請專利第1項所述之金屬芯錫球，其中，上述金屬芯為選自銅(Cu)、銀(Ag)、金(Au)及鋁(Al)所構成的群之金屬。
  3. 如申請專利第1項所述之金屬芯錫球，其中，上述第一電鍍層係以化學鍍形成鎳(Ni)或含有鎳的合金。
  4. 如申請專利第1項所述之金屬芯錫球，其中，上述第二電鍍層係以電解電鍍實現含有錫(Sn)的合金。
  5. 一種半導體裝置的散熱連接結構，其包括，請求項1到4中任何一項所述之金屬芯錫球。
  6. 如申請專利第5項所述之半導體裝置的散熱連接結構，其中，在上述半導體裝置的散熱連接結構中，上述金屬芯錫球把上述半導體裝置的連接端子與基板的電極之間予以連接。
  7. 如申請專利第6項所述之半導體裝置的散熱連接結構，其中，在上述錫球連接上述電極的連接部中包含黃銅粉或銀粉。
  8. 一種電子裝置，其包括：半導體裝置的連接端子；基板的電極，與上述連接端子相向；及錫球，讓上述連接端子與上述基板的電極之間形成熱及電連接，滿足下述式1：[式1]1/6a<aA+bB+cC<2/3a其中，a為金屬芯的導熱度，b為第一電鍍層的導熱度，c為第二電鍍層的導熱度，A、B、C各為錫球中金屬芯、第一電鍍層及第二電鍍層所佔 體積比，A+B+C=1，0.0005<B<0.05，0.7<C<0.94，A、B、C為整體錫球中1與1之間的實數。
  9. 如申請專利第8項所述之電子裝置，其中，上述基板的電極與上述錫球之間具備接合部，該接合部包含黃銅粉或銀粉。
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US11903168B2 (en) 2018-11-29 2024-02-13 Denka Company Limited Heat dissipation member

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TWI578418B (zh) 2017-04-11
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US20140183733A1 (en) 2014-07-03

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