TW201339794A - 電壓調節器 - Google Patents

電壓調節器 Download PDF

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Publication number
TW201339794A
TW201339794A TW101145266A TW101145266A TW201339794A TW 201339794 A TW201339794 A TW 201339794A TW 101145266 A TW101145266 A TW 101145266A TW 101145266 A TW101145266 A TW 101145266A TW 201339794 A TW201339794 A TW 201339794A
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Taiwan
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voltage
transistor
nmos transistor
output
amplifier
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TW101145266A
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TWI561955B (zh
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Takashi Imura
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Seiko Instr Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45744—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45166—Only one input of the dif amp being used for an input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45478—Indexing scheme relating to differential amplifiers the CSC comprising a cascode mirror circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45681—Indexing scheme relating to differential amplifiers the LC comprising offset compensating means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45702—Indexing scheme relating to differential amplifiers the LC comprising two resistors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Amplifiers (AREA)

Abstract

〔課題〕提供可以改善偏移之影響並取得正確之輸出電壓的電壓調節器。〔解決手段〕為一種電壓調節器，具備有將基準電壓和對輸出電晶體所輸出之電壓進行分壓後之分壓電壓之差予以放大輸出，並控制輸出電晶體之閘極的第1段之放大器及疊接型放大電路，第1段之放大器係在輸入電晶體具備第一高耐壓NMOS電晶體，和在尾電流源具備NMOS電晶體，疊接型放大電路係在疊接電晶體具備第二高耐壓NMOS電晶體。

Description

電壓調節器
本發明係關於改善偏移(Offset)之影響的電壓調節器。
第2圖為表示以往之放大電路的電路圖。
以往之放大電路通常被構成NMOS電晶體301之汲極和高耐壓NMOS電晶體302之源極被連接，在輸出端子311連接高耐壓NMOS電晶體302之汲極。如此一來，可以將負荷阻抗設定成較高使可以產生大輸出電壓振幅，並可以提高放大電路全體之增益(例如，參照專利文獻1)。
〔先行技術文獻〕 〔專利文獻〕
〔專利文獻1〕日本特開2005-311689號公報
但是，在以往之電壓調節器中，當使用採用高耐壓之MOS的疊接放大電路而構成放大器時，在第1段之放大器產生偏移。
本發明係提供可以改善放大器之偏移，而取得正確的輸出電壓的電壓調節器。
為了解決以往之課題，本發明構成下述般。
為一種電壓調節器，具備有將基準電壓和對輸出電晶體所輸出之電壓進行分壓後之分壓電壓之差予以放大輸出，並控制輸出電晶體之閘極的第1段之放大器及疊接型放大電路，第1段之放大器係在輸入電晶體具備第一高耐壓NMOS電晶體，和在尾電流源具備NMOS電晶體，疊接型放大電路係在疊接電晶體具備第二高耐壓NMOS電晶體。
本發明之電壓節器係可以改善在第1段之放大器產生的偏移，並不會增大尾電流源之尺寸而可以確保驅動能力。
第1圖為本實施型態之電壓調節器之電路例。
本實施型態之電壓調節器係由PMOS電晶體115、116、119、120，和高耐壓NMOS電晶體113、114、118，和NMOS電晶體111、112、117，和基準電壓電路110，和定電流電路151，和電阻121、122，和輸出端子131，和電源端子101，和接地端子100所構成。
接著針對連接予以說明。定電流電路151係一方被連 接於電源端子101，另一方被連接於NMOS電晶體111之閘極及汲極。NMOS電晶體111之源極被連接於接地端子100。NMOS電晶體112係閘極被連接於NMOS電晶體111之閘極，汲極被連接於高耐壓NMOS電晶體113及114之源極，源極被連接於接地端子100。NMOS電晶體117係閘極被連接於NMOS電晶體111之閘極，汲極被連接於高耐壓NMOS電晶體118之源極，源極被連接於接地端子100。高耐壓NMOS電晶體113係閘極被連接於基準電壓電路110，汲極被連接於PMOS電晶體115之閘極及汲極。基準電壓電路110之另一方被連接於接地端子100。高耐壓NMOS電晶體114係閘極被連接於電阻121和122之連接點，汲極被連接於PMOS電晶體116之汲極。PMOS電晶體115之源極被連接於電源端子101。PMOS電晶體116係閘極被連接於PMOS電晶體115之閘極，源極被連接於電源端子101。高耐壓NMOS電晶體118係閘極被連接於高耐壓NMOS電晶體113之閘極，汲極被連接於PMOS電晶體119之汲極。PMOS電晶體119係閘極被連接於PMOS電晶體116之汲極，源極被連接於電源端子101。PMOS電晶體120係閘極被連接於PMOS電晶體119之汲極，汲極被連接於輸出端子131，源極被連接於電源端子101。電阻121之另一方被連接於輸出端子131，電阻122之另一方被連接於接地端子100。
接著，針對本實施型態之電壓調節器之動作予以說明。電阻121和122係分壓屬於輸出端子131之電壓的輸 出電壓Vout，並輸出分壓電壓Vfb。高耐壓NMOS電晶體113、114，和PMOS電晶體115、116和NMOS電晶體112構成第1段之放大器，高耐壓NMOS電晶體118和PMOS電晶體119和NMOS電晶體117構成第2段之放大器。PMOS電晶體120係當作輸出電晶體而進行動作。比較基準電壓電路110之輸出電壓Vref和分壓電壓Vfb，以輸出端子131之輸出電壓Vout成為一定之方式控制PMOS電晶體120之閘極電壓。當輸出電壓Vout高於規定電壓時，分壓電壓Vfb也高於基準電壓Vref。然後，第2段之放大器之輸出訊號(PMOS電晶體120之閘極電壓)變高，PMOS電晶體120斷開，輸出電壓Vout變低。如此一來，控制成輸出電壓Vout成為一定。再者，當輸出電壓Vout低於規定電壓時，則以與上述相反之動作，輸出電壓Vout變高。如此一來，本實施型態之電壓調節器係控制成輸出電壓Vout成為一定。
高耐壓NMOS電晶體118係當作疊接電晶體而動作。高耐壓NMOS電晶體成為相較於NMOS電晶體驅動能力低且耐壓高的構造。高耐壓NMOS電晶體118和NMOS電晶體117構成疊接型放大電路，不會增大尺寸而可以確保驅動能力。將成為第1段之放大器之輸入電晶體之高耐壓NMOS電晶體113和114和高耐壓NMOS電晶體118設為相同構造，可以改善在第1段之放大器之輸入電晶體產生之偏移的影響。因第1段之放大器之尾電流源使用驅動能力高且耐壓低之構造的NMOS電晶體112，故也可以確保 驅動能力並刪減電路面積。
藉由上述，本實施型態之電壓節器係可以改善在第1段之放大器產生的偏移，並不會增大尾電流源之尺寸而可以確保驅動能力。
100‧‧‧接地端子
101‧‧‧電源端子
110‧‧‧基準電壓電路
131、311‧‧‧輸出端子
151‧‧‧定電流電路
第1圖為表示本實施型態之電壓調節器的電路圖。
第2圖為使用以往之該高耐壓MOS之疊接放大電路之電路圖。
100‧‧‧接地端子
101‧‧‧電源端子
110‧‧‧基準電壓電路
111、112、117‧‧‧NMOS電晶體
113、114、118‧‧‧高耐壓NMOS電晶體
115、116、119、120‧‧‧PMOS電晶體
121、122‧‧‧電阻
131‧‧‧輸出端子
151‧‧‧定電流電路

Claims (1)

  1. 一種電壓調節器，具備有將基準電壓和對輸出電晶體所輸出之電壓進行分壓後之分壓電壓之差予以放大輸出，並控制上述輸出電晶體之閘極的第1段之放大器及疊接型放大電路，該電壓調節器之特徵為：上述第1段之放大器係在輸入電晶體具備第一高耐壓NMOS電晶體，和在尾電流源具備NMOS電晶體，上述疊接型放大電路係在疊接電晶體具備第二高耐壓NMOS電晶體。
TW101145266A 2012-01-18 2012-12-03 電壓調節器 TW201339794A (zh)

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JP2012008275A JP5833938B2 (ja) 2012-01-18 2012-01-18 ボルテージレギュレータ

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TWI561955B TWI561955B (zh) 2016-12-11

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KR (1) KR101974657B1 (zh)
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CN103219947B (zh) 2017-11-07
US8766610B2 (en) 2014-07-01
KR101974657B1 (ko) 2019-05-02
TWI561955B (zh) 2016-12-11
CN103219947A (zh) 2013-07-24
US20130181777A1 (en) 2013-07-18
JP2013149031A (ja) 2013-08-01
JP5833938B2 (ja) 2015-12-16
KR20130084991A (ko) 2013-07-26

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