TW201317180A - 四氯化矽副產物藉由與金屬還原劑反應而用於製備矽的用途 - Google Patents

四氯化矽副產物藉由與金屬還原劑反應而用於製備矽的用途 Download PDF

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Publication number
TW201317180A
TW201317180A TW101126296A TW101126296A TW201317180A TW 201317180 A TW201317180 A TW 201317180A TW 101126296 A TW101126296 A TW 101126296A TW 101126296 A TW101126296 A TW 101126296A TW 201317180 A TW201317180 A TW 201317180A
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TW
Taiwan
Prior art keywords
ppm
ruthenium
metal
tetrachloride
ppt
Prior art date
Application number
TW101126296A
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English (en)
Chinese (zh)
Inventor
Ekkehard Mueh
Hartwig Rauleder
Bodo Frings
Original Assignee
Evonik Degussa Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Degussa Gmbh filed Critical Evonik Degussa Gmbh
Publication of TW201317180A publication Critical patent/TW201317180A/zh

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Manufacture And Refinement Of Metals (AREA)
TW101126296A 2011-07-25 2012-07-20 四氯化矽副產物藉由與金屬還原劑反應而用於製備矽的用途 TW201317180A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011079755 2011-07-25
DE201110109543 DE102011109543A1 (de) 2011-07-25 2011-08-03 Verwendung von Siliciumtetrachlorid-Nebenprodukten zur Herstellung von Silizium durch Umsetzung mit metallischen Reduktionsmitteln

Publications (1)

Publication Number Publication Date
TW201317180A true TW201317180A (zh) 2013-05-01

Family

ID=47503145

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101126296A TW201317180A (zh) 2011-07-25 2012-07-20 四氯化矽副產物藉由與金屬還原劑反應而用於製備矽的用途

Country Status (4)

Country Link
EP (1) EP2736845A1 (de)
DE (1) DE102011109543A1 (de)
TW (1) TW201317180A (de)
WO (1) WO2013013857A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115215340A (zh) * 2021-04-19 2022-10-21 四川物科金硅新材料科技有限责任公司 一种纳米硅线及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10217126A1 (de) * 2002-04-17 2003-10-30 Wacker Chemie Gmbh Verfahren zur Herstellung von amorphem Silicium über Siliciumtetrachlorid
JP2007284259A (ja) * 2006-04-12 2007-11-01 Shin Etsu Chem Co Ltd シリコンの製造方法及び製造装置
WO2007120871A2 (en) * 2006-04-13 2007-10-25 Cabot Corporation Production of silicon through a closed-loop process
JP2009208994A (ja) * 2008-03-04 2009-09-17 Sumitomo Chemical Co Ltd シリコン製造方法及びシリコン製造装置
WO2010029894A1 (ja) * 2008-09-09 2010-03-18 チッソ株式会社 高純度結晶シリコン、高純度四塩化珪素およびそれらの製造方法
DE102010002342A1 (de) 2010-02-25 2011-08-25 Evonik Degussa GmbH, 45128 Verwendung der spezifischen Widerstandsmessung zur indirekten Bestimmung der Reinheit von Silanen und Germanen und ein entsprechendes Verfahren
CN102161488A (zh) * 2011-02-28 2011-08-24 中南大学 一种制备太阳能级多晶硅的方法

Also Published As

Publication number Publication date
WO2013013857A1 (de) 2013-01-31
DE102011109543A1 (de) 2013-01-31
EP2736845A1 (de) 2014-06-04

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