TW201301758A - 包含常關型及常開型裝置的疊接開關以及包括該等開關的電路 - Google Patents
包含常關型及常開型裝置的疊接開關以及包括該等開關的電路 Download PDFInfo
- Publication number
- TW201301758A TW201301758A TW101112958A TW101112958A TW201301758A TW 201301758 A TW201301758 A TW 201301758A TW 101112958 A TW101112958 A TW 101112958A TW 101112958 A TW101112958 A TW 101112958A TW 201301758 A TW201301758 A TW 201301758A
- Authority
- TW
- Taiwan
- Prior art keywords
- normally
- semiconductor device
- gate
- switch
- capacitor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 89
- 239000004065 semiconductor Substances 0.000 claims abstract description 77
- 230000005669 field effect Effects 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 102000010970 Connexin Human genes 0.000 claims 1
- 108050001175 Connexin Proteins 0.000 claims 1
- 210000003976 gap junction Anatomy 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 23
- 230000005611 electricity Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 230000009191 jumping Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
- H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs
Landscapes
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/085,648 US20120262220A1 (en) | 2011-04-13 | 2011-04-13 | Cascode switches including normally-off and normally-on devices and circuits comprising the switches |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201301758A true TW201301758A (zh) | 2013-01-01 |
Family
ID=47005975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101112958A TW201301758A (zh) | 2011-04-13 | 2012-04-12 | 包含常關型及常開型裝置的疊接開關以及包括該等開關的電路 |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US20120262220A1 (enExample) |
| JP (1) | JP2014512765A (enExample) |
| CN (1) | CN103493374A (enExample) |
| DE (1) | DE112012001674T5 (enExample) |
| TW (1) | TW201301758A (enExample) |
| WO (1) | WO2012141859A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI813465B (zh) * | 2021-10-08 | 2023-08-21 | 美商高效電源轉換公司 | 具單閘極之雙向GaN場效電晶體 |
| TWI875797B (zh) * | 2019-08-12 | 2025-03-11 | 英商瑟其福耐斯特有限公司 | 包括電晶體和二極體的電路和裝置 |
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2011
- 2011-04-13 US US13/085,648 patent/US20120262220A1/en not_active Abandoned
-
2012
- 2012-03-22 JP JP2014505149A patent/JP2014512765A/ja active Pending
- 2012-03-22 DE DE112012001674.2T patent/DE112012001674T5/de not_active Ceased
- 2012-03-22 CN CN201280017874.7A patent/CN103493374A/zh active Pending
- 2012-03-22 WO PCT/US2012/030045 patent/WO2012141859A2/en not_active Ceased
- 2012-04-12 TW TW101112958A patent/TW201301758A/zh unknown
-
2016
- 2016-11-04 US US15/344,400 patent/US20170104482A1/en not_active Abandoned
-
2019
- 2019-08-28 US US16/553,735 patent/US20190393871A1/en not_active Abandoned
-
2023
- 2023-06-14 US US18/334,412 patent/US20230327661A1/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI875797B (zh) * | 2019-08-12 | 2025-03-11 | 英商瑟其福耐斯特有限公司 | 包括電晶體和二極體的電路和裝置 |
| TWI813465B (zh) * | 2021-10-08 | 2023-08-21 | 美商高效電源轉換公司 | 具單閘極之雙向GaN場效電晶體 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103493374A (zh) | 2014-01-01 |
| US20230327661A1 (en) | 2023-10-12 |
| US20170104482A1 (en) | 2017-04-13 |
| US20120262220A1 (en) | 2012-10-18 |
| DE112012001674T5 (de) | 2014-02-13 |
| US20190393871A1 (en) | 2019-12-26 |
| WO2012141859A2 (en) | 2012-10-18 |
| JP2014512765A (ja) | 2014-05-22 |
| WO2012141859A3 (en) | 2013-01-03 |
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