TW201301606A - 光半導體裝置及該製造方法 - Google Patents
光半導體裝置及該製造方法 Download PDFInfo
- Publication number
- TW201301606A TW201301606A TW101109488A TW101109488A TW201301606A TW 201301606 A TW201301606 A TW 201301606A TW 101109488 A TW101109488 A TW 101109488A TW 101109488 A TW101109488 A TW 101109488A TW 201301606 A TW201301606 A TW 201301606A
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- semiconductor device
- optical semiconductor
- layer
- organic
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 230000003287 optical effect Effects 0.000 title claims description 45
- 239000004065 semiconductor Substances 0.000 title claims description 45
- 230000004888 barrier function Effects 0.000 claims abstract description 118
- 238000007789 sealing Methods 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 60
- 230000008569 process Effects 0.000 claims abstract description 28
- 239000012528 membrane Substances 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims description 46
- 238000005229 chemical vapour deposition Methods 0.000 claims description 43
- 230000015572 biosynthetic process Effects 0.000 claims description 35
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 22
- 229910052707 ruthenium Inorganic materials 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052727 yttrium Inorganic materials 0.000 claims description 18
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 18
- 239000002994 raw material Substances 0.000 claims description 16
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 239000002243 precursor Substances 0.000 claims description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
- 239000011147 inorganic material Substances 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 210000003298 dental enamel Anatomy 0.000 claims 1
- 239000000872 buffer Substances 0.000 abstract description 97
- 238000000605 extraction Methods 0.000 abstract description 12
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 229910000484 niobium oxide Inorganic materials 0.000 abstract 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 592
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 27
- 239000011521 glass Substances 0.000 description 17
- 239000000203 mixture Substances 0.000 description 16
- 229910000449 hafnium oxide Inorganic materials 0.000 description 14
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical class [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 239000011347 resin Substances 0.000 description 14
- 229920005989 resin Polymers 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 10
- 229910052735 hafnium Inorganic materials 0.000 description 9
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 9
- -1 oxygen radical Chemical class 0.000 description 9
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 9
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 9
- 150000003254 radicals Chemical class 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 7
- 229910001936 tantalum oxide Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008033 biological extinction Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910007264 Si2H6 Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 3
- 229940073561 hexamethyldisiloxane Drugs 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 3
- 238000001782 photodegradation Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 2
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 2
- 229910000861 Mg alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- WGGNJZRNHUJNEM-UHFFFAOYSA-N 2,2,4,4,6,6-hexamethyl-1,3,5,2,4,6-triazatrisilinane Chemical compound C[Si]1(C)N[Si](C)(C)N[Si](C)(C)N1 WGGNJZRNHUJNEM-UHFFFAOYSA-N 0.000 description 1
- WSPOQKCOERDWJQ-UHFFFAOYSA-N 2-methyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound C[SiH]1O[SiH2]O[SiH2]O[SiH2]O1 WSPOQKCOERDWJQ-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- WUVQSKJZRUKVDZ-UHFFFAOYSA-N [O-2].[Y+3].[Ru+3].[O-2].[O-2] Chemical compound [O-2].[Y+3].[Ru+3].[O-2].[O-2] WUVQSKJZRUKVDZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- AJXBBNUQVRZRCZ-UHFFFAOYSA-N azanylidyneyttrium Chemical compound [Y]#N AJXBBNUQVRZRCZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- PHUNDLUSWHZQPF-UHFFFAOYSA-N bis(tert-butylamino)silicon Chemical compound CC(C)(C)N[Si]NC(C)(C)C PHUNDLUSWHZQPF-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- DDJSWKLBKSLAAZ-UHFFFAOYSA-N cyclotetrasiloxane Chemical compound O1[SiH2]O[SiH2]O[SiH2]O[SiH2]1 DDJSWKLBKSLAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- ACXIAEKDVUJRSK-UHFFFAOYSA-N methyl(silyloxy)silane Chemical compound C[SiH2]O[SiH3] ACXIAEKDVUJRSK-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 125000001477 organic nitrogen group Chemical group 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011081553A JP2012216452A (ja) | 2011-04-01 | 2011-04-01 | 光半導体装置およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201301606A true TW201301606A (zh) | 2013-01-01 |
Family
ID=46926025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101109488A TW201301606A (zh) | 2011-04-01 | 2012-03-20 | 光半導體裝置及該製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20120248422A1 (enExample) |
| JP (1) | JP2012216452A (enExample) |
| KR (1) | KR101366449B1 (enExample) |
| CN (1) | CN102738408A (enExample) |
| TW (1) | TW201301606A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI649207B (zh) * | 2015-12-08 | 2019-02-01 | 理光股份有限公司 | 氣體阻絕性積層體、半導體裝置、顯示元件、顯示裝置及系統 |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8921842B2 (en) * | 2012-11-14 | 2014-12-30 | Lg Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
| KR101410102B1 (ko) * | 2012-11-20 | 2014-06-27 | 삼성디스플레이 주식회사 | 유기발광 표시장치 |
| US9692010B2 (en) | 2012-11-20 | 2017-06-27 | Samsung Display Co., Ltd. | Organic light emitting display device |
| KR101502206B1 (ko) | 2012-11-20 | 2015-03-12 | 삼성디스플레이 주식회사 | 발광효율이 향상된 유기발광 표시장치 |
| US9349988B2 (en) | 2012-11-20 | 2016-05-24 | Samsung Display Co., Ltd. | Organic light emitting display device |
| KR102092557B1 (ko) * | 2012-12-12 | 2020-03-24 | 엘지디스플레이 주식회사 | 유기 발광 장치 및 유기 발광 장치 제조 방법 |
| JP6054763B2 (ja) | 2013-02-12 | 2016-12-27 | 株式会社ジャパンディスプレイ | 有機ｅｌ表示装置 |
| TWI578592B (zh) * | 2013-03-12 | 2017-04-11 | 應用材料股份有限公司 | 有機發光二極體元件及包括其之封裝結構的沉積方法 |
| CN105720207B (zh) * | 2013-06-29 | 2017-09-15 | 艾克斯特朗欧洲公司 | 用于高性能涂层的沉积的方法以及封装的电子器件 |
| US20150014663A1 (en) * | 2013-07-11 | 2015-01-15 | Korea Institute Of Science And Technology | Organic light emitting display apparatus and the method for manufacturing the same |
| KR101588298B1 (ko) * | 2013-07-11 | 2016-02-12 | 한국과학기술연구원 | 유기 발광 표시 장치 및 이의 제조 방법 |
| KR102136790B1 (ko) * | 2013-11-15 | 2020-07-23 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치와, 이의 제조 방법 |
| DE102014102565B4 (de) * | 2014-02-27 | 2019-10-24 | Osram Oled Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
| KR102203910B1 (ko) * | 2014-10-22 | 2021-01-14 | 엘지디스플레이 주식회사 | 롤러블 유기 발광 표시 장치 |
| WO2016024742A1 (en) | 2014-08-09 | 2016-02-18 | LG Display Co.,Ltd. | Rollable organic light emitting diode display device |
| KR20160036722A (ko) * | 2014-09-25 | 2016-04-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| CN105679787B (zh) * | 2014-11-18 | 2018-09-25 | 群创光电股份有限公司 | 有机发光二极管显示装置及其制造方法 |
| TWI595692B (zh) * | 2014-11-18 | 2017-08-11 | 群創光電股份有限公司 | 有機發光二極體顯示裝置及其製造方法 |
| KR102392604B1 (ko) * | 2014-12-05 | 2022-04-28 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
| US9450203B2 (en) | 2014-12-22 | 2016-09-20 | Apple Inc. | Organic light-emitting diode display with glass encapsulation and peripheral welded plastic seal |
| CN104752441B (zh) * | 2015-03-20 | 2018-03-16 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示面板和显示装置 |
| KR102330331B1 (ko) * | 2015-07-17 | 2021-11-25 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| DE102016109485B4 (de) * | 2016-05-24 | 2025-12-04 | Pictiva Displays International Limited | Verfahren zum herstellen eines optoelektronischen bauelements, optoelektronisches bauelement und schutzschicht |
| WO2018085715A2 (en) * | 2016-11-06 | 2018-05-11 | Orbotech LT Solar, LLC. | Method and apparatus for encapsulation of an organic light emitting diode |
| CN109427992B (zh) * | 2017-08-28 | 2019-10-18 | 昆山国显光电有限公司 | 薄膜封装结构及具有其的显示装置 |
| JP6663400B2 (ja) * | 2017-09-11 | 2020-03-11 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| US10134709B1 (en) * | 2017-12-21 | 2018-11-20 | Industrial Technology Research Institute | Substrateless light emitting diode (LED) package for size shrinking and increased resolution of display device |
| KR102659437B1 (ko) * | 2018-07-24 | 2024-04-23 | 삼성디스플레이 주식회사 | 디스플레이 장치 제조 방법 및 디스플레이 장치 제조 시스템 |
| CN208722925U (zh) * | 2018-08-16 | 2019-04-09 | 京东方科技集团股份有限公司 | 一种显示器件的封装结构、显示装置 |
| CN109326738B (zh) | 2018-09-30 | 2020-02-11 | 云谷（固安）科技有限公司 | 显示面板、显示装置及显示面板的制造方法 |
| KR102343148B1 (ko) * | 2019-04-29 | 2021-12-27 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그 제조방법 |
| CN114365263A (zh) * | 2019-09-10 | 2022-04-15 | 应用材料公司 | 用于显示封装应用的高密度等离子体cvd |
| US12439744B2 (en) * | 2019-12-23 | 2025-10-07 | Ams-Osram Ag | Semiconductor device with a bond pad and a sandwich passivation layer and manufacturing method thereof |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4171258B2 (ja) * | 2002-07-25 | 2008-10-22 | 三洋電機株式会社 | 有機ｅｌパネル |
| JP4138672B2 (ja) * | 2003-03-27 | 2008-08-27 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
| US20080171184A9 (en) * | 2003-04-17 | 2008-07-17 | Minoru Komada | Barrier film and laminated material, container for wrapping and image display medium using the saw, and manufacturing method for barrier film |
| JP2005267984A (ja) * | 2004-03-17 | 2005-09-29 | Sanyo Electric Co Ltd | 有機ｅｌ表示装置 |
| JP4631683B2 (ja) * | 2005-01-17 | 2011-02-16 | セイコーエプソン株式会社 | 発光装置、及び電子機器 |
| JP4763400B2 (ja) * | 2005-09-22 | 2011-08-31 | 株式会社巴川製紙所 | 粘土薄膜基板、電極付き粘土薄膜基板、及びそれらを用いた表示素子 |
| JP4600254B2 (ja) * | 2005-11-22 | 2010-12-15 | セイコーエプソン株式会社 | 発光装置および電子機器 |
| ES2624177T3 (es) * | 2006-07-07 | 2017-07-13 | University Of Miami | Plataformas de cultivo celular potenciadas en oxigeno |
| JP2008153004A (ja) * | 2006-12-15 | 2008-07-03 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子 |
| JP2008288012A (ja) * | 2007-05-17 | 2008-11-27 | Seiko Epson Corp | エレクトロルミネッセンス装置とその製造方法 |
| CN101697343B (zh) * | 2009-10-27 | 2011-06-15 | 苏州纳科显示技术有限公司 | 一种薄膜封装方法 |
| US20110244128A1 (en) * | 2010-03-31 | 2011-10-06 | Tokyo Electron Limited | Flow plate utilization in filament assisted chemical vapor deposition |
| US9299956B2 (en) * | 2012-06-13 | 2016-03-29 | Aixtron, Inc. | Method for deposition of high-performance coatings and encapsulated electronic devices |
-
2011
- 2011-04-01 JP JP2011081553A patent/JP2012216452A/ja active Pending
-
2012
- 2012-03-20 TW TW101109488A patent/TW201301606A/zh unknown
- 2012-03-22 KR KR1020120029220A patent/KR101366449B1/ko not_active Expired - Fee Related
- 2012-03-28 US US13/432,678 patent/US20120248422A1/en not_active Abandoned
- 2012-03-30 CN CN2012100974368A patent/CN102738408A/zh active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI649207B (zh) * | 2015-12-08 | 2019-02-01 | 理光股份有限公司 | 氣體阻絕性積層體、半導體裝置、顯示元件、顯示裝置及系統 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20120248422A1 (en) | 2012-10-04 |
| CN102738408A (zh) | 2012-10-17 |
| KR20120112056A (ko) | 2012-10-11 |
| KR101366449B1 (ko) | 2014-02-25 |
| JP2012216452A (ja) | 2012-11-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201301606A (zh) | 光半導體裝置及該製造方法 | |
| TWI655796B (zh) | 有機發光二極體元件及於其上形成密封結構的方法 | |
| US20190221771A1 (en) | Buffer layer for organic light emitting devices and method of making the same | |
| KR20150129841A (ko) | 박막 캡슐화 ― ｏｌｅｄ 어플리케이션을 위한 얇은 초고 배리어 층 | |
| JP6157102B2 (ja) | Ｂｓｉイメージセンサー用の半導体装置とその形成方法 | |
| US9269923B2 (en) | Barrier films for thin film encapsulation | |
| JP2016523442A (ja) | 高性能コーティングの堆積方法及びカプセル化電子デバイス | |
| TWI728979B (zh) | 薄膜電晶體 | |
| TWI450650B (zh) | 可撓式基材及可撓式電子裝置 | |
| TWI856128B (zh) | 保護膜堆疊、使用其之薄膜電晶體以及用以沈積氮化矽材料之方法 | |
| CN111769206A (zh) | 用于衬底和装置的薄膜渗透屏障系统和制造所述薄膜渗透屏障系统的方法 | |
| JP5241173B2 (ja) | 有機ｅｌ素子の製造方法 | |
| JP4479249B2 (ja) | 有機ｅｌ素子の製造方法 | |
| US11118266B2 (en) | Method for depositing protection film of light-emitting element | |
| KR20120042476A (ko) | 전자소자용 보호막 및 그 제조 방법 | |
| KR102342285B1 (ko) | 봉지 구조체 및 그 제조 방법 | |
| CN110911586A (zh) | 一种oled面板、oled面板的制备方法和显示装置 | |
| CN109075263B (zh) | 发光二极管的保护膜的沉积方法 | |
| CN120583800B (zh) | 一种黑组件晶硅太阳能电池及其制备方法 | |
| TW201615882A (zh) | 氧化鈦薄膜以及包含其之複合薄膜之製備方法 |