201250771 六、發明說明： 【發明所屬之技術領域】 .本發明是關於洗淨例如半導體晶圓或液晶顯示用之玻 璃基板（LCD基板）之基板背面的技術。 【先前技術】 在半導體裝置之製造工程中，保持例如半導體晶圓（ 以下稱爲晶圓）於潔淨狀態極爲重要。因此，在各個製造 製程或處理製程之前後，因應所需設置有洗淨晶圓表面之 製程。 一般爲晶圓表面之洗淨是將刷具自上方推壓至固定於 真空腔室或機械夾具之晶圓，一面供給脫離子水（Deionized Water :以下，稱爲DIW)等，一面相對性使晶圓和刷具滑動 ，依此除去表面微粒之手法。 如此之晶圓表面之洗淨不僅形成電路之晶圓上面，即 使對晶圓背面也必須實施。例如，在晶圓上面塗佈光阻液 ，以特定圖案使光阻膜曝光之後，予以顯像而形成光罩圖 案之光微影製程中，當在晶圓背面放置微粒之附著狀態時 ，則微粒進入至用以載置晶圓之平台和晶圓之間而直接進 行曝光。如此之微粒成爲使晶圓產生彎曲，於曝光時引起 失焦（聚焦變形之現象）的原因。尤其，近年來，隨著浸液 曝光或雙圖案製作之配線技術之更微細化，也增加半導體 裝置之製造工程之所含之工程數。因此，微粒附著於晶圓 背面之風險變大，晶圓背面之洗淨成爲近年重要之課題。 -5- 201250771 但是，光微影製程雖然藉由將執行光阻液曝光之曝光 裝置連接於執行光阻液之塗佈或顯ίέ之塗佈、顯像裝置之 系統而執行，但是晶圓在該些裝置內通常是在將上面朝上 方之狀態被搬運。因此，爲了使用自上方推壓刷具執行洗 淨之類型的基板洗淨裝置而洗淨晶圓背面，在晶圓之搬運 裝置和基板洗淨裝置之間設置被稱爲倒轉機之基板反轉裝 置，於將晶圓朝往基板洗淨裝置搬入搬出時，必須設爲將 晶圓背面設爲朝上方之狀態。但是，如此之手法，則有必 須要有設置倒轉機之空間或執行晶圓之反轉動作之空間， 塗佈、顯像裝置成爲大型化之問題。再者，因省略倒轉機 之設置，即使將刷具設置在晶圓之下方，也產生.保持晶圓 之夾具等所覆蓋之無效空間，無法洗淨背面全體。 針對如此之問題，於專利文獻1記載有藉由與晶圓直 徑相同程度之中空圓筒，構成可旋轉保持晶圓之旋轉夾具 ，並將供給洗淨液之噴嘴或刷具配置在該中空圓筒內之基 板洗淨裝置。將背面朝下方（將上面朝向上方）而搬運之晶 圓，當藉由機械夾具等，保持於中空圓筒之開口邊緣上時 ，則成爲自下方將刷具推壓至晶圓背面之狀態。在該狀態 中，使中空圓筒繞著中心軸旋'轉時，因晶圓背面和刷具相 對性滑動，故可以不使用倒轉機，洗淨晶圓背面全體。 [專利文獻1] 日本專利第3 3774 1 4號公報：第003 6段落至第0040段 落，第3圖201250771 VI. Description of the Invention: [Technical Field] The present invention relates to a technique for cleaning a back surface of a substrate such as a semiconductor wafer or a liquid crystal display (LCD substrate). [Prior Art] In the manufacturing process of a semiconductor device, it is extremely important to maintain, for example, a semiconductor wafer (hereinafter referred to as a wafer) in a clean state. Therefore, after each manufacturing process or process, a process for cleaning the surface of the wafer is provided as needed. Generally, the surface of the wafer is cleaned by pushing the brush from above to a wafer fixed to a vacuum chamber or a mechanical jig, and supplying deionized water (hereinafter referred to as DIW). The wafer and brush slide, thereby removing surface particles. Such wafer surface cleaning does not only form the wafer top surface, but must also be applied to the wafer back side. For example, when a photoresist is coated on a wafer, and the photoresist film is exposed in a specific pattern, the photolithography process is performed to form a mask pattern, and when the adhesion state of the particles is placed on the back surface of the wafer, The particles enter the space between the platform on which the wafer is placed and the wafer and are directly exposed. Such particles cause bending of the wafer and cause defocus (a phenomenon of focus deformation) during exposure. In particular, in recent years, with the miniaturization of wiring technology for immersion exposure or double pattern production, the number of engineering included in the manufacturing process of a semiconductor device has also increased. Therefore, the risk of the particles adhering to the back surface of the wafer is increased, and the cleaning of the wafer back surface has become an important issue in recent years. -5- 201250771 However, the photolithography process is performed by connecting an exposure device that performs photoresist exposure to a system that performs coating of a photoresist solution or a coating and developing device, but the wafer is These devices are usually carried in a state in which the upper side faces upward. Therefore, in order to clean the back surface of the wafer by performing a cleaning type substrate cleaning device from the upper pressing brush, a substrate inversion called an inverted machine is disposed between the wafer transfer device and the substrate cleaning device. When the wafer is carried into and out of the substrate cleaning device, the device must be placed with the back surface of the wafer facing upward. However, in such a method, there is a need to provide a space for the inverter or a space for performing the reversal operation of the wafer, and the coating and developing device become a problem of enlargement. Further, since the arrangement of the reversing machine is omitted, even if the brush is placed under the wafer, an invalid space covered by the jig for holding the wafer or the like is generated, and the entire back surface cannot be cleaned. In order to solve such a problem, Patent Document 1 discloses that a hollow cylinder having a diameter similar to that of a wafer is formed, and a rotating jig for rotatably holding a wafer is formed, and a nozzle or a brush for supplying a cleaning liquid is disposed in the hollow circle. A substrate cleaning device in the cylinder. When the crystal which is carried by the back side (the upper side faces upward) is held by the opening edge of the hollow cylinder by a mechanical jig or the like, the brush is pressed from the lower side to the back side of the wafer. In this state, when the hollow cylinder is rotated around the central axis, since the back surface of the wafer and the brush are relatively slid, the entire back surface of the wafer can be cleaned without using an inverter. [Patent Document 1] Japanese Patent No. 3 3774 1 4: Paragraphs 003 6 to 0040, Fig. 3
-6- S 201250771 【發明內容】 [發明所取解決之課題] 但是，專利文獻1所記載之基板洗淨裝置中，因使用 機械夾具等在中空圓筒上保持晶圓之周緣部之構成，故有 對晶圓邊緣部造成損傷之情形。尤其，於執行浸液曝光之 時，因避免光阻膜之外緣部於浸液曝光時與純水接觸而剥 離，故以光阻膜覆蓋至晶圓之斜面部或垂直端面，不使光 阻膜之外緣部位於成爲浸液狀態之區域爲多。當藉由機械 夾具等機械性保持形成如此光阻膜之晶圓之邊緣部時，則 有損傷光阻膜產生微粒，或於浸液曝光時造成光阻膜剥離 之情形。 本發明是鑒於如此事情所創作出者，其目的爲提供不 需要基板反轉，並且可以不對基板周緣部造成損傷之方式 洗淨基板背面之基板洗淨裝置。 [用以解決課題之手段] 本發明所涉及之基板洗淨裝置是屬於洗淨基板背面之 基板洗淨裝置，其特徵爲：具備 第1基板保持手段，其係用以水平地吸附保持朝向下 方之基板背面之第1區域； 第2基板保持手段，其係藉由上述第1基板保持手段接 收基板，水平地吸附保持不與上述第1區域重疊之基板背 面之第2區域； 移動手段，其係用以使上述第1基板保持手段對上述 201250771 第2基板保持手段相對性地在橫方向移動； 杯罩，其係構成包圍被上述第1基板保持手段或第2基 板保持手段保持之基板，藉由上述移動手段與第1基板保 持手段同時移動； 洗淨液供給手段，其係對吸附保持於上述第1基板保 持手段或第2基板保持手段之基板背面供給洗淨液；及 洗淨構件，其係接觸於上述基板之背面而施予洗淨， 朝上述第1基板保持手段的基板收授，係在上述第1基 板保持手段之保持上述基板的面高於上述洗淨構件之上面 的位置，並且上述第2基板保持手段之保持面低於上述洗 淨構件之上面的位置進行， 上述基板之背面的洗淨，係將上述第1基板保持手段 或第2基板保持手段移動至上述洗淨構件抵接於基板之背 面的位置而進行。 於此，即使構成一面使上述移動手段在一方向移動， 一面以上述洗淨構件洗淨被上述第1基板保持手段保持之 基板的包含背面中央部之區域亦可。 又，即使構成於洗淨上述包含背面中央部之區域後使 上述洗淨構件停止’並使上述第2基板保持手段上升而從 上述第1基板保持手段接取上述基板，且藉由上述移動手 段使上述第1基板保持手段之上面移動至低於上述洗淨構 件之上面的位置，使上述第2基板保持手段下降而使基板 抵接於上述洗淨構件，一面使基板旋轉一面洗淨基板之背 面周緣部之區域亦可。-6-S 201250771 [Problems to be Solved by the Invention] However, in the substrate cleaning apparatus described in Patent Document 1, the peripheral portion of the wafer is held on the hollow cylinder by using a mechanical jig or the like. Therefore, there is a case where damage is caused to the edge portion of the wafer. In particular, when the liquid immersion exposure is performed, since the outer edge portion of the photoresist film is prevented from being peeled off by contact with the pure water during the immersion exposure, the photoresist is applied to the slope portion or the vertical end surface of the wafer to prevent light from being lighted. The outer edge portion of the resist film is located in a region where the liquid immersion state is large. When the edge portion of the wafer on which the photoresist film is formed is mechanically held by a mechanical jig or the like, the photoresist film is damaged to generate fine particles, or the photoresist film is peeled off when the liquid is exposed. The present invention has been made in view of the above circumstances, and an object of the invention is to provide a substrate cleaning apparatus for cleaning a back surface of a substrate without requiring substrate inversion and damage to the peripheral portion of the substrate. [Means for Solving the Problem] The substrate cleaning device according to the present invention is a substrate cleaning device for cleaning the back surface of a substrate, and is characterized in that it includes a first substrate holding means for horizontally adsorbing and holding downward. a first substrate holding means, wherein the substrate is received by the first substrate holding means, and the second region of the back surface of the substrate not overlapping the first region is horizontally adsorbed and held; and the moving means is The first substrate holding means is configured to relatively move in the lateral direction with respect to the 201250771 second substrate holding means, and the cup cover is configured to surround the substrate held by the first substrate holding means or the second substrate holding means. The moving means is simultaneously moved by the first substrate holding means, and the cleaning liquid supply means supplies the cleaning liquid to the back surface of the substrate which is adsorbed and held by the first substrate holding means or the second substrate holding means; and the cleaning member And contacting the back surface of the substrate to be cleaned, and feeding the substrate to the first substrate holding means, and holding the substrate on the first substrate The surface of the substrate is higher than the upper surface of the cleaning member, and the holding surface of the second substrate holding means is lower than the upper surface of the cleaning member, and the cleaning of the back surface of the substrate is performed. The first substrate holding means or the second substrate holding means is moved to a position where the cleaning member abuts on the back surface of the substrate. Here, even if the moving means moves in one direction, the cleaning member may wash the region including the center portion of the back surface of the substrate held by the first substrate holding means. Further, even if the cleaning member is stopped after cleaning the region including the central portion of the back surface, the second substrate holding means is raised, and the substrate is picked up from the first substrate holding means by the moving means. The upper surface of the first substrate holding means is moved to a position lower than the upper surface of the cleaning member, and the second substrate holding means is lowered to bring the substrate into contact with the cleaning member, and the substrate is washed while rotating the substrate. The area around the periphery of the back is also available.
-8- .201250771 而且，即使構成上述洗淨構件係移動至上述基板之最 外周之洗淨位置而開始洗淨，一面使上述基板旋轉一面以 在比洗淨開始位置更內周側上描劃同心圓狀之軌跡的方式 移動亦可。 再者，即使具備包圍上述第2基板保持手段之筒狀體 ，該筒狀體具有朝向基板之背面而噴出氣體之噴出口亦可 〇 此外，即使構成上述洗淨供給手段被設置在上述洗淨 構件亦可。 [發明效果] 若藉由本發明所涉及之基板洗淨裝置時，因支撐基板 背面而予以保持，並直接在其狀態下執行洗淨，故除基板 洗淨裝置之外，不需要設置反轉基板之裝置的空間，或用 以執行基板反轉動作之空間。其結果，比起以往類型之基 板洗淨裝置，可以使設置有基板洗淨裝置之塗佈、顯像裝 置小型化。 再者，該基板洗淨裝置因在兩個基板保持手段之間轉 接基板，故不會產生基板保持手段所覆蓋之無法洗淨的無 效空間。依此，因迴避無效空間之產生，故不需要機械性 保持基板周緣部，不會對基板周緣部造成損傷地可執行洗 淨，可防止微粒之產生或對光阻膜造成損傷而對提升製品 之良率有貢獻。 201250771 【實施方式】 在以下說明之實施形態中，針對設置在塗佈、顯像裝 置之類型的洗淨裝置，當作基板洗淨裝置（以下稱爲洗淨 裝置）之一例予以說明。雖然針對包含藉由該洗淨裝置之 洗淨工程的光微影製程之具體例予以後述’但是本洗淨裝 置設置在例如塗佈、顯像裝置之出口附近’完成自洗淨形 成光阻膜之晶圓背面後，朝向後續之曝光裝置送出之任務 以 第予 照造 參構 » 之 先置 首裝 淨 洗 3 第 至 圖 明 說 本 對 針 置 裝 淨 洗 示 表 圖 圖第 之圖 及視 涉斜 所之 態 形 施 ，第2圖爲其平面圖，第3圖爲縱剖面圖。 如第1圖所示般，洗淨裝置1爲將當作略水平吸附保持 自塗佈、顯像裝置內之搬運手段（後述之第2交接機械臂 D2)所接收之晶圓W之第1基板保持手段的吸附墊2’和完 成自該吸附墊2接收晶圓W同樣略水平吸附保持之第2基 板保持手段之任務之旋轉夾具3，和洗淨晶圓W背面之刷 具5，安裝在上面開口之箱狀之下杯罩43之構造。 首先，針對屬於第1基板保持手段之吸附墊2予以說明 。如第1圖所示般，洗淨裝置1具備兩個吸附墊2’各個吸 附墊2由例如細長之塊體所構成。兩個吸附墊2被配置成可 以略平行支撐保持晶圓W噴背面之周緣部份（第1區域）° 吸附墊2與無圖式之吸引管連接，具備當作經第2圖所示之 吸附孔2a —面吸附晶圓W —面保持之真空夾具的功能。 如第1圖所示般，各個吸附墊2安裝於細長棒狀之墊支撐部 -10- 201250771 21之略中央部，該些2根墊支撐部21之兩端部藉由各安裝 於兩根橋桁部22，構成由墊支撐部21和橋桁部22所形成之 井桁20。 兩根橋桁部22之兩端各被固定於沿著該些側壁被延伸 設置在下杯罩43對向之兩側壁（朝向第1圖之前側和後側的 側壁）之外側的兩根皮帶23上。各個皮帶23捲繞於由兩個1 組所構成之捲軸24，各捲軸24安裝於各被平行配置在上述 兩側壁之兩片側板26。捲軸24之一個連接於構成移動手段 之驅動機構25，經捲軸24或皮帶23使橋桁部22移動，可以 使已述之井桁20全體在如第1圖、第2圖所示之X方向移動 自如。 再者，如第1圖所示般，各個側板26是藉由由滑動器 27a和導軌27b所構成之2組升降機構2 7支撐該底面，固定 於洗淨裝置1之無圖式之框體床面。在該些升降機構27之 —個設置無圖示之驅動機構，藉由在導軌2 7b使滑動器2 7a 升降，可以使上述井桁2 0全體在圖中之Z方向升降。 再者，井桁20上，跨設有用以抑制洗淨液飛散之甜甜 圈狀之上杯罩41。在上杯罩41之上面設置有較晶圓 W大 口徑之開口部4 1 a，可以經該開口部4 1 a在搬運手段和吸附 墊2等之間執行晶圓W之交接。並且，被跨設在井桁20上 之上杯罩41是如第3圖所示般，構成隨著井桁20之動作在 X方向和Z方向移動。 接著，針對屬於第2基板保持手段之旋轉夾具3予以說 明。旋轉夾具3爲自下方支撐晶圓W之背面中央部（第2區 -11 - 201250771 域）之圓板。旋轉夾具3被設置在略平行配置之兩個吸附墊 2之中間，藉由各個基板保持手段（吸附墊2、夾具3)所支撐 之晶圓W背面之第1區域和第2區域爲不重疊。如第3圖所 示般，旋轉夾具3經軸部3b於驅動機構（旋轉夾具馬達）33 ，旋轉夾具3是構成藉由該旋轉夾具馬達33旋轉及升降自 如。再者，與吸附墊2相同，旋轉夾具3也與無圖式之吸引 管連接，具有經第2圖所示之吸附孔3a —面吸附晶圓W — 面予以保持之功能。 在旋轉夾具3之側方，以可支撐晶圓W背面而予以升 降之方式，設置與升降機構3 2a連接之支撐銷32，藉由與 外部之搬運手段之共同動作，可以將晶圓W自搬運手段 交接至吸附墊2，或是將晶圓W從旋轉夾具3交接至晶圓 W。 並且，如第4圖所示般，在旋轉夾具3或支撐銷32之周 圍，設置有構成包圍該些機器之包圍構件之氣刀31。氣刀 31沿著周方向而在圓筒（包圍構件）之上端形成有氣體之噴 射口 31a，自該噴射口 31a朝向晶圓 W背面，藉由噴出例 » 如壓縮氣體等之氣體，朝圓筒之外側吹散洗淨液，於晶圓 W被轉接至旋轉夾具3時，則完成當作在互相乾燥旋轉夾 具3表面和以該旋轉夾具所支撐之基板背面（第2區域）之狀 態下接觸之乾燥手段的任務。如第7圖所示般，氣刀31是 由兩層圓筒所構成，可以經該兩層圓筒間之中空部將自無 圖式之供給部所供給之氣體供給至噴射口 3 1 a。 接著，針對當作執行晶圓W之背面洗淨之洗淨構件-8-.201250771 Further, even if the cleaning member is moved to the cleaning position at the outermost periphery of the substrate and the cleaning is started, the substrate is rotated while being drawn on the inner peripheral side of the washing start position. The way of the concentric trajectory can also be moved. In addition, even if the cylindrical body surrounding the second substrate holding means is provided, the cylindrical body may have a discharge port for discharging gas toward the back surface of the substrate, and the cleaning supply means may be provided in the cleaning. Components are also available. [Effect of the Invention] When the substrate cleaning device according to the present invention is held by the back surface of the support substrate and is directly cleaned in the state, the substrate is not required to be provided in addition to the substrate cleaning device. The space of the device or the space for performing the substrate reversal action. As a result, the coating and developing device provided with the substrate cleaning device can be downsized compared to the conventional substrate cleaning device. Further, since the substrate cleaning apparatus switches the substrate between the two substrate holding means, an ineffective space which cannot be cleaned by the substrate holding means does not occur. According to this, since the generation of the ineffective space is avoided, it is not necessary to mechanically hold the peripheral portion of the substrate, and the cleaning can be performed without causing damage to the peripheral portion of the substrate, thereby preventing generation of particles or damage to the photoresist film. The yield has contributed. [Embodiment] In the embodiment described below, a cleaning device of the type provided in the application and development device will be described as an example of a substrate cleaning device (hereinafter referred to as a cleaning device). The specific example of the photolithography process including the cleaning process by the cleaning device will be described later. However, the cleaning device is installed near the exit of the coating and developing device, for example, to complete the self-cleaning to form a photoresist film. After the back side of the wafer, the task of sending to the subsequent exposure device is firstly installed in the first part of the wafer. The first picture shows the picture and the view of the needle-washing table. In the form of a slope, the second diagram is a plan view, and the third diagram is a longitudinal section. As shown in Fig. 1, the cleaning device 1 is the first wafer W received by the transport means (the second transfer robot D2 to be described later) which is held by the coating and developing device in a slightly horizontally adsorbed manner. The adsorption pad 2' of the substrate holding means and the rotating jig 3 for accomplishing the task of the second substrate holding means which is slightly horizontally adsorbed and held by the adsorption pad 2, and the brush 5 for cleaning the back surface of the wafer W are mounted. The configuration of the cup cover 43 under the box shape opened above. First, the adsorption pad 2 belonging to the first substrate holding means will be described. As shown in Fig. 1, the cleaning device 1 is provided with two adsorption pads 2'. Each of the adsorption pads 2 is composed of, for example, an elongated block. The two adsorption pads 2 are arranged to be able to support the peripheral portion (first region) of the back surface of the wafer W sprayed in a slightly parallel manner. The adsorption pad 2 is connected to the suction tube of the non-drawing type, and is provided as shown in FIG. The adsorption hole 2a functions to adsorb the vacuum clamp of the wafer W to the surface. As shown in Fig. 1, each of the adsorption pads 2 is attached to a central portion of the elongated bar-shaped pad support portion -10- 201250771 21, and the two end portions of the two pad support portions 21 are attached to each other by two The bridge portion 22 constitutes a well 20 formed by the pad support portion 21 and the bridge portion 22. Both ends of the two bridge dams 22 are fixed to the two belts 23 extending along the side walls on the outer sides of the opposite side walls of the lower cup cover 43 (the side walls toward the front side and the rear side of the first figure). . Each of the belts 23 is wound around a reel 24 composed of two sets, and each reel 24 is attached to two side plates 26 which are arranged in parallel on the two side walls. One of the reels 24 is connected to the drive mechanism 25 constituting the moving means, and the bridge portion 22 is moved by the reel 24 or the belt 23, so that the entire well 20 described above can be moved in the X direction as shown in Figs. 1 and 2 . Further, as shown in Fig. 1, each of the side plates 26 supports the bottom surface by two sets of elevating mechanisms 27 composed of a slider 27a and a guide rail 27b, and is fixed to the frame of the cleaning device 1 without a picture. Bed surface. A drive mechanism (not shown) is provided in each of the lift mechanisms 27, and the sliders 27a are lifted and lowered by the guide rails 7 7b, so that the entire well 20 can be raised and lowered in the Z direction in the drawing. Further, on the well 20, a doughnut-shaped upper cup cover 41 for suppressing the scattering of the washing liquid is provided. The upper portion of the upper cup cover 41 is provided with an opening portion 41a having a larger diameter than the wafer W, and the wafer W can be transferred between the conveying means and the adsorption pad 2 via the opening portion 41a. Further, the cup cover 41 is placed over the well 20 as shown in Fig. 3, and moves in the X direction and the Z direction in accordance with the operation of the well 20. Next, the rotation jig 3 belonging to the second substrate holding means will be described. The rotating jig 3 is a circular plate that supports the central portion (the second region -11 - 201250771 domain) of the back surface of the wafer W from below. The rotating jig 3 is disposed between the two adsorption pads 2 disposed in a slightly parallel manner, and the first region and the second region on the back surface of the wafer W supported by the respective substrate holding means (adsorption pad 2, jig 3) do not overlap. . As shown in Fig. 3, the rotary jig 3 is coupled to the drive mechanism (rotary jig motor) 33 via the shaft portion 3b, and the rotary jig 3 is configured to be rotatable and lifted by the rotary jig motor 33. Further, similarly to the adsorption pad 2, the rotary jig 3 is also connected to the suction tube of the non-drawing type, and has a function of holding the wafer W in the same manner as the adsorption hole 3a shown in Fig. 2 . On the side of the rotating jig 3, a support pin 32 connected to the elevating mechanism 32a is provided so as to support the back surface of the wafer W, and the wafer W can be self-operated by the cooperation with the external conveying means. The transfer means is transferred to the adsorption pad 2, or the wafer W is transferred from the rotary jig 3 to the wafer W. Further, as shown in Fig. 4, an air knife 31 constituting an enclosing member surrounding the machines is provided around the rotating jig 3 or the support pin 32. The gas knife 31 is formed with a gas ejection opening 31a at the upper end of the cylinder (the surrounding member) in the circumferential direction, and the gas is ejected from the ejection opening 31a toward the back surface of the wafer W by a gas such as a compressed gas. When the wafer W is transferred to the rotating jig 3 when the wafer W is transferred to the rotating jig 3, the surface of the rotating jig 3 and the back surface (second area) of the substrate supported by the rotating jig are completed. The task of drying means of contact. As shown in Fig. 7, the air knife 31 is composed of two layers of cylinders, and the gas supplied from the supply unit of the non-drawing type can be supplied to the injection port 3 1 a through the hollow portion between the two layers of cylinders. . Next, for the cleaning member to perform the back surface cleaning of the wafer W
-12- 201250771 之刷具5予以說明。刷具5成爲例如將多數塑膠纖維捆成圓 柱狀之構造，在將其上面推壓至晶圓W背面之狀態下， 藉由旋轉自如之刷具5和晶圓W互相滑動，則可以除去晶 圓背面之微粒。刷具5使用例如PVC海綿、氨基甲酸乙酯 海綿、尼龍纖維等。刷具5被安裝於支撐此之支撐部5 1之 前端，支撐部51是以不干涉晶圓W或橋桁部22之方式， 成爲彎曲成柄杓型之形狀。該支撐部51之基端，被固定於 在第1圖中從設置有旋轉夾具3之方向觀看刷具5沿著深側 之側壁而設置之皮帶52上。皮帶52捲繞於兩個捲繞軸53, 該些捲繞軸5 3安裝於上述深側之側壁上面。捲繞軸5 3之一 方連接於驅動機構54，經皮帶52或支撐部51可以將刷具5 在第1圖、第2圖所示之Y方向移動自如^ 再者，在支撐部51之前端設置有無圖式之驅動機構， 可以使刷具旋轉於周方向。並且，再者，支撐部51之前端 如第2圖所示設置有洗淨噴嘴5a和鼓風噴嘴5b，自洗淨液 噴嘴5a供給用以刷具5洗掉從晶圓W背面除去之微粒之洗 淨液（例如DIW)，自鼓風噴嘴5b供給促進用以於結束洗淨 之後附著於晶圓W背面之洗淨液之乾燥之例如氮（N2)等之 氣體。 其他，如第3圖所示般，在下杯罩43之底部設置有用 以將儲存於下杯罩43內之洗淨液排出之排液管1 6，用以排 氣洗淨裝置1內之氣流之兩個排氣管15。排氣管15因防止 儲存於下杯罩43底部之洗淨液流入排氣管1 5，故從下杯罩 43之底面延伸至上方，並且以不自上方滴落之洗淨液直接 -13- 201250771 進入至排氣管15之方式，藉由成安裝於氣刀31周圍之環狀 蓋之內杯罩42覆蓋。再者，圖中之13爲於完成洗淨晶圓W 之後自上方對晶圓外圍附近吹壓縮氣體輔助所殘留之洗淨 液乾燥之鼓風噴嘴，14爲用以與位於刷具5之支撐部51前 端之洗淨液噴嘴5 a同時將洗淨液供給至晶圓W背面之洗 淨液噴嘴。並且，鼓風噴嘴13具備無圖式之升降機構’於 晶圓搬入搬出時，以不與搬運中之晶圓W或搬運手段干 涉之方式，退避至上方。 再者，在無延伸設置各皮帶23、52之下杯罩43側壁， 安裝有收納UV燈1 2之燈箱1 1 »處理對象之晶圓W由X左 方向被搬入搬出至洗淨裝置1內，此時，構成通過UV燈 12之上方。UV燈12是對完成洗淨而被搬出之晶圓W背面 照射紫外光，完成使殘留之微粒收縮之任務。 再者，如第2圖所示般，各驅動機構25、54、UV燈12 、設置在排氣管15之無圖式之壓力調整部等，藉由控制塗 佈、顯像裝置全體之動作的控制部6被控制。控制部6是由_ 具有例如無圖式之程式儲存部之電腦所構成，在程式儲存 部儲存有電腦程式，該電腦程式具備有在吸附電2和旋轉 夾具3之間交接從外部搬運裝置所接收之晶圓W，或針對 藉由刷具5洗淨或動作等之步驟（命令）群。然後，藉由該電 腦程式被讀出至控制部6，控制部6控制洗淨裝置1之動作 。並且，該電腦程式是在被收納於例如硬碟、光碟碟、記 憶卡等之記憶手段之狀態下儲存於程式儲存部。 根據以上所說明之構成，針對洗淨晶圓W背面之動The brush 5 of -12-201250771 is explained. The brush 5 is, for example, a structure in which a plurality of plastic fibers are bundled in a columnar shape, and in a state where the upper surface of the wafer W is pressed against the back surface of the wafer W, the brush 5 and the wafer W are slidably slid to each other, and the crystal can be removed. Particles on the back of the circle. The brush 5 uses, for example, a PVC sponge, a urethane sponge, a nylon fiber or the like. The brush 5 is attached to the front end of the support portion 51 that supports the support portion 51. The support portion 51 has a shape that is curved into a handle shape so as not to interfere with the wafer W or the bridge portion 22. The base end of the support portion 51 is fixed to a belt 52 which is disposed along the side wall of the deep side of the brush 5 from the direction in which the rotary jig 3 is provided in Fig. 1 . The belt 52 is wound around two winding shafts 53, which are mounted on the side walls of the deep side. One of the winding shafts 5 3 is connected to the drive mechanism 54 , and the brush 5 can be moved in the Y direction shown in FIGS. 1 and 2 via the belt 52 or the support portion 51. Further, at the front end of the support portion 51 The presence or absence of a driving mechanism for the pattern allows the brush to be rotated in the circumferential direction. Further, the front end of the support portion 51 is provided with a cleaning nozzle 5a and an air blowing nozzle 5b as shown in Fig. 2, and the cleaning liquid nozzle 5a is supplied from the cleaning liquid nozzle 5a for washing the particles removed from the back surface of the wafer W. The cleaning liquid (for example, DIW) supplies a gas such as nitrogen (N2) which is used to promote drying of the cleaning liquid adhering to the back surface of the wafer W after the completion of the cleaning from the air blowing nozzle 5b. Further, as shown in FIG. 3, a drain pipe 16 for discharging the washing liquid stored in the lower cup cover 43 is provided at the bottom of the lower cup cover 43 for exhausting the airflow in the apparatus 1. Two exhaust pipes 15. The exhaust pipe 15 prevents the washing liquid stored in the bottom of the lower cup cover 43 from flowing into the exhaust pipe 15, so that it extends from the bottom surface of the lower cup cover 43 to the upper side, and the washing liquid which is not dripped from above is directly -13 - 201250771 The manner of entering the exhaust pipe 15 is covered by the inner cup cover 42 which is attached to the annular cover around the air knife 31. In addition, 13 in the figure is a blower nozzle for drying the cleaning liquid remaining in the vicinity of the periphery of the wafer from the upper side after the wafer W is cleaned, and 14 is used for supporting the brush 5 The cleaning liquid nozzle 5a at the tip end of the portion 51 simultaneously supplies the cleaning liquid to the cleaning liquid nozzle on the back surface of the wafer W. Further, the air blowing nozzle 13 is provided with a non-drawing elevating mechanism', and is retracted to the upper side so as not to interfere with the wafer W or the transport means during transport when the wafer is loaded and unloaded. Further, the side wall of the cup cover 43 is provided without extending the belts 23 and 52, and the light box 1 1 for storing the UV lamp 12 is attached. The wafer W to be processed is carried in and out of the X to the cleaning device 1 in the left direction. At this time, it is formed above the UV lamp 12. The UV lamp 12 is a task of irradiating ultraviolet light to the back surface of the wafer W that has been removed by the cleaning to complete the shrinkage of the remaining particles. Further, as shown in Fig. 2, each of the drive mechanisms 25 and 54 and the UV lamp 12, the pressure adjustment unit provided in the exhaust pipe 15 and the like, controls the entire operation of the coating and developing device. The control unit 6 is controlled. The control unit 6 is constituted by a computer having, for example, a program storage unit having no picture, and a computer program is stored in the program storage unit, and the computer program is provided with a transfer between the adsorption power 2 and the rotary jig 3 from the external transfer device. The received wafer W, or a group of steps (commands) for washing or moving by the brush 5. Then, the computer program is read out to the control unit 6, and the control unit 6 controls the operation of the cleaning device 1. Further, the computer program is stored in the program storage unit in a state of being stored in a storage means such as a hard disk, a disc, or a memory card. According to the configuration described above, the movement of the back surface of the wafer W is cleaned.
-14- 201250771 作，一面參照第5圖至第8圖，予以說明。第5圖及第6圖爲 用以說明晶圓W之背面洗淨所涉及之洗淨裝置_ 1之各動作 的縱剖面圖。第7圖爲表示洗淨時之晶圓w背面之樣子的 說明圖。再者，第8圖是在吸附電2或旋轉夾具3所保持之 各種狀態下，模式性表示洗淨晶圓W之區域之平面圖。 並且，在該些圖中，爲了便於圖式’因應所需適當省略 UV燈12或鼓風噴嘴13等之記載。 如第5圖（a)所示般，例如馬蹄形之搬運手段（第2交接 機械臂D2)是將處理對象之晶圓W搬入至洗淨裝置1內而 在上杯罩41之開口部41a上方停止，支撐銷32是從旋轉夾 具3之下方上昇在搬運手段之下方待機。搬運手段是從支 撐銷32之上方下降將晶圓W交給支撐銷32，退出至洗淨 裝置1之外。此時，吸附墊2是在保持晶圓W之面較刷具5 上面高之位置待機，旋轉夾具3則退避至較刷具5上面低之 位置。藉由如此位置關係，當支撐銷32下降時，晶圓 W 首先交至吸附墊（第5圖（b))。 之後，吸附墊2以即使自背面推壓刷具5也不動之方式 ，吸附保持晶圓w，保持晶圓w直接移動至右方向。然 後，搬運至事先決定晶圓w之位置（例如氣刀3 1左端與晶 圓W左端略一致之位置）之後，吸附墊2下降，將晶圓W 之背面推壓至刷具5上面（第5圖（c))。 接著，使氣刀31動作防止洗淨液包覆附著於旋轉夾具 3表面之後，由支撐部51前端之洗淨液噴嘴5a供給洗淨液 ，並且使刷具5旋轉開始洗淨晶圓W之背面洗淨。背面洗 -15- 201250771 淨是藉由吸附墊2之晶圓W之移動和刷具5之移動的組合 而進行。具體而言，如第8圖（a)所示般’刷具5是在圖中之 Y方向往返，刷具5之移動方向切換之時，吸附墊2僅以較 刷具5直徑短之距離移動至左X方向。依此’刷具5描畫出 以箭頭所示之軌跡在晶圓w背面移動’可以洗淨同圖中 以左上斜線所塗畫之區域T 1的四處》 在此，執行洗淨之期間中，晶圓W之背面全體如第7 圖所示般，被洗淨液之液膜F覆蓋’以刷具5除去之微粒 與自該晶圓W背面流落之洗淨液同時被流沖至下杯罩43 。再者，自氣刀31之噴出口 31a朝向晶圓W背面噴出氣體 ，洗淨液朝向氣刀3 1之外側吹散’依此與氣刀3 1對向之晶 圓 W背面保持乾燥之狀態。藉由如此之構成，可以防止 覆蓋晶圓 W背面之洗淨液包覆至氣刀31之內側。其結果 ，旋轉夾具3之表面經常維持乾燥狀態，可防止由於處理 之洗淨液所造成之污染或形成水印。 當完成洗淨上述區域T1時，使吸附墊2移動而令晶圓 W中央部位於旋轉夾具3上方（第6圖（a))，接著，執行將晶 圓W從吸附墊2交接至旋轉夾具3。晶圓W之交接是例如 使氣刀3 1動作，直接停止刷具5之移動或旋轉、洗淨液之 供給，解除藉由吸附墊2吸附晶圓W，另外，使退避之旋 轉夾具3上昇支撐晶圓 W之背面，接著藉由使吸附墊2退 避至下方而執行。 接收到晶圓W之旋轉夾具3因以大略與吸附墊2相同 高度，吸附保持晶圓W，故刷具5成爲被推壓於晶圓W之 -16- 201250771 狀態。在此，再次使刷具5旋轉，藉由供給洗 開始背面洗淨（第6圖（b))。此時，背面洗淨藉白 之旋轉和刷具5之移動的組合而進行。具體而| 圖（b)所示般，首先使刷具5移動至可以洗淨晶田 周之位置後緩慢使晶圓W旋轉，晶圓W —旋 具5移動至較以先前動作所洗淨之環狀區域， 具5之直徑部份洗淨內周側之位置，重複執行 藉由如此之動作，一面描畫出同心圓狀之軌跡 晶圓 W背面，可以洗淨同圖中以右上斜線所 T2的四處。 在此，組合區域T1和區域T2之區域是如 示般，包含晶圓W背面全體，以不產生無法 空間之方式，調整各機器之尺寸或移動範圍。 轉夾具3保持晶圓W而執行洗淨之期間中，7 之洗淨液噴嘴5a，在第6圖（b)中，也從被設置 側方之洗淨液噴嘴1 4供給洗淨液。當晶圓W 區域和乾燥之區域混合時，因於使洗淨液乾燥 水印之原因，故抑制洗淨液遍及四處產生水印 如此一來，當完成晶圓W背面全體之洗 止刷具5之旋轉或移動、洗淨液之供給、旋轉衣 ，移至洗淨液之甩乾動作。甩乾是藉由使旋_ 旋轉甩掉附著於晶圓W背面之洗淨液而執行 述般，藉由一口氣甩乾四處濕潤之晶圓W而 抑制產生水印。此時，使退避至上方之風鼓噴 淨液，再次 &旋轉夾具3 f，例如第8 S w之最外 轉時，使刷 可以僅以刷 相同動作。 ，一面移動 塗畫之區域 第8圖（b)所 洗淨之無效 再者，以旋 =僅刷具5側 在氣刀31左 表面濕潤之 之時，產生 〇 淨時，則停 5具3之旋轉 f夾具3高速 。如先前所 使予乾燥， 嘴1 3下降， -17- 201250771 同時以使刷具5横邊之風鼓噴嘴5b位於晶圓W周緣部之方 式，移動支撐部51，藉由晶圓周緣部之上面和下面吹出氣 體，促進甩乾。並且，針對旋轉夾具3所保持之第2區域， 雖然無法執行甩乾，但是在藉由氣刀31而乾燥之狀態下， 因與旋轉夾具3接觸，故幾乎不會產生水印。 藉由以上所說明之動作，完成晶圓W背面全體之洗 淨和乾燥，以與搬入時相反之動作將晶圓W交給搬運手 段而搬出。此時點亮第1圖至第3圖所示之UV燈12，自自 馬蹄形狀之搬運手段之下方朝向晶圓W背面照射紫外線 ，即使萬一附著微粒之時，因例如有機物藉由紫外線之照 射而被分解，故使如此之類型之微粒收縮，可以縮小失焦 等之影響。 與晶圓W之搬出動作並行，吸附墊2或旋轉夾具3移 動至第5圖（a)所示之位置，等待下一個晶圓W之搬入。然 後，重複參照第5圖至第8圖予以說明之動作，順序洗淨多 數晶圓W。 接著，針對第2實施形態，一面參照第9圖至第11圖予 以說明。第9圖爲表示第2實施形態所涉及之洗淨裝置1 〇〇 之構成的平面圖，第10圖及第11圖爲表示該作用之縱剖面 圖》在該些圖中，對於與第1實施形態相同之構成，賦予 與第1至第8圖所使用之符號相同之符號。 第2實施形態所涉及之洗淨裝置100是使屬於第2基板 保持手段之旋轉夾具3退避至晶圓W之第2區域下方之點 ，與使晶圓W相對於旋轉夾具橫方向移動之第1實施形態 -18 - 201250771 不同。在第2實施形態中’井桁2〇固定於Χ方向’可僅向 Ζ方向升降。使該井桁20升降之升降機構27(參照第1圖）和 使旋轉夾具升降之無圖式之升降機構’是構成用以使第2 基板保持手段對上述第1基板保持手段相對性升降之升降 手段。再者，刷具5是其支撐部51在基端側被固定於下杯 罩43。該支撐部51因構成以基端部之支軸爲中心轉、伸縮 自如，故可以不使晶圓W移動至橫方向’藉由刷具5從該 中心區域（第2區域）洗淨至支撐部51之基端部側。 再者，在刷具5之相反側’經伸縮自如之支撐部72於 下杯罩43安裝有用以防止於第2區域洗淨中洗淨液滴下退 避至該下方之旋轉夾具3上之具有防水性之例如氟樹脂製 之覆蓋構件71。並且，在該支撐部72安裝有完成當作使第 2區域乾燥之乾燥手段之任務的乾燥噴嘴73’可朝向第2區 域噴射氣體。再者，在本實施形態中，於旋轉夾具3周圍 ，因不設置氣刀31，故自覆蓋構件71之外緣部朝向下方噴 出例如氮氣體等之氣體，使於洗淨時之霧不附著於旋轉夾 具3。 接著，當針對第2實施形態所涉及之洗淨裝置100之作 用予以說明時，則如第10圖（a)所示般，在晶圓W搬入時 ，旋轉夾具3退避至下杯罩43之下方，再者覆蓋構件71退 避至較旋轉夾具3上方更側方。在該狀態下，使升降銷32 升降，自搬運手段D2接收晶圓W，在吸附墊2上吸附保持 晶圓W。 接著，如第10圖（b)所示般，使升降銷32退避至旋轉夾 -19- 201250771 具3之位置，使覆蓋構件71前進，位於旋轉夾具3之上方之 後，使刷具5移動至晶圓W之略中央部。然後，使吸附墊 2下降，開始洗淨含有第2區域之晶圓W中央部。此時， 旋轉夾具3雖然退避至洗淨中之第2區域之下方，但是覆蓋 構件71成爲傘，並且藉由該覆蓋構件71朝向下方噴出氣體 ，由於霧不附著，故旋轉夾具3保持乾燥狀態。當完成晶 圓W中央部之洗淨時，刷具5則退避至側方，自乾燥噴嘴 73朝向第2區域噴射氣體，依此乾燥該區域。 接著，如第11圖所示般，於將覆蓋構件71退避至側方 之後，使旋轉夾具3上昇，自吸附墊2將晶圓W交給旋轉 夾具3，吸附保持完成洗淨及乾燥之第2區域。然後，一面 組合晶圓W之旋轉和刷具5之移動，一面洗淨無完成洗淨 之第2區域以外之晶圓W背面。此時，覆蓋構件7 1因退避 至側方’故升降銷32即使構成例如儲存於鞘體等而不與洗 淨液接觸亦可。 當完成洗淨時，使旋轉夾具3旋轉甩乾晶圓W而予以 乾燥之後’以與搬時入相反之動作，自升降銷32交給至外 部之搬運手段，將晶圓W搬出至洗淨裝置100外部》並且 ’雖然第9圖無表示，但是此時即使在晶圓 W背面藉由 UV燈執行紫外線照射當然亦可。 若藉由本實施形態所涉及之洗淨裝置！、1〇〇,則具有 以下之效果。因支撐晶圓W背面而予以保持，直接在如 此之狀態下執行洗淨，故除洗淨裝置1之外，不需要設置 反轉晶圓W之倒轉機之空間或執行晶圓w反轉動作之空 -20- 201250771 間。其結果，相較於以往之類型，可以使設置該洗淨裝置 1、1 00之塗佈、顯像裝置小型化。 再者，本洗淨裝置1、100因在兩個基板保持手段（吸 附墊2、旋轉夾具3)之間轉接晶圓w，故可以不產生因被 吸附墊2或旋轉夾具3覆蓋而導致無法洗淨之無效空間。依 此，因迴避無效空間之產生，故無須機械性保持晶圓 W 之周緣部，不會對晶圓W周緣部造成損傷，可執行洗淨 ，並且可以對防止產生微粒或對光阻膜造成損傷而對提升 製品之良率有貢獻。 < 再者，本實施形態所涉及之洗淨裝置1、1 00，採用於 洗淨完成後，藉由甩乾一口氣使附著於晶圓W之洗淨液 乾燥，在旋轉夾具3周圍設置氣刀31，於晶圓W被交給旋 轉夾具3時，在互相乾燥旋轉夾具3表面和以該旋轉夾具所 支撐之基板背面（第2區域）之狀態下接觸之機構。藉由該些 機構，抑制產生在晶圓W或旋轉夾具3中之水印，可以防 止洗淨後之晶圓W背面再次污染。 再者，該洗淨裝置1、100雖然洗淨構件採用洗淨效果 高之刷具5，但洗淨構件並不限定於此。例如即使採用二 流體噴嘴或噴射噴嘴、機械式噴嘴等，藉由吹出洗淨液等 除去微粒之類型之洗淨構件亦可。並且，在實施形態中， 雖然例示旋轉式之刷具5，但是即使代替此採用振動式之 刷具亦可，並且，洗淨液之種類也不限定於DIW，即使爲 其他洗淨液亦可。 並且，設置於洗淨裝置之基板保持手段是如實施形態 -21 - 201250771 所示般，並不如實施形態所示般僅限定於2種類（吸附墊2 、旋轉夾具3)。例如具備3種類以上之基板保持手段，在 該些保持手段之間成轉接2次以上之基板亦可。此時，可 以解釋成最後基板保持爲第2基板保持手段，之前保持基 板爲第1基板保持手段。 接著，針對顯像裝置適用上述洗淨裝置1之一例予以 簡單說明。第12圖爲於塗佈、顯像裝置連接曝光裝置之系 統之平面圖，第13圖爲同系統之斜視圖。再者’第14圖爲 同系統之縱剖面圖。@塗佈、顯像裝置設置有載體區塊 S1，構成交接機械臂C自載置在該載置台101上之密閉型 之載體1〇〇取出晶圓W而交給至處理區塊S2’並且交接機 械臂C自處理區塊S2接收處理完之晶圓W而返回置載體 100。 本實施形態所涉及之洗淨裝置W或是洗淨裝置100 ’ 以下相同）於將晶圓w自處理區塊S2交給曝光裝置S4之時 ’即是如第12圖所示般’構成在介面區塊S3之入口部執 行成爲處理對象之晶圓W之背面洗淨。 上述處理區塊S2是如第13圖所示般’在該例中’由 下方依順疊層用以執行顯像處理之第1區塊（DEV層）B1、 形成在光阻膜之下層側之反射防止膜之形成處理的第2區 塊（BCT層）B2、用以執行光阻膜之塗佈之第3區塊（COT層 )B3、用以執行形成在光阻膜之上層側之反射防止膜之形 成的第4區塊（TCT層）B4而構成。 第2區塊（BCT層）B2和第4區塊（TCT層）B4是由藉由旋 -22- 201250771 轉塗層塗佈用以形成各個反射防止膜之藥液之本形態所涉 及之塗佈單元’和用以執行在該塗佈單元所執行之處理的 前處理及後處理的加熱冷卻系統之處理單元群，和被設置 在上述塗佈單元和處理單元群之間，在該些之間執行晶圓 w之交接的搬運機械臂A2、A4所構成。即使針對第3區塊 (COT層）B 3，除上述藥液爲光阻液之外，其他爲相同構成 〇 另外，針對第1區塊（DEV層）B1，是在一個DEV層B1 內疊層兩層顯像單元110。然後，在該DEV層B1內，設置 用以將晶圓W搬運至該些兩層顯像單元110之搬運機械臂 A1。即是，成爲相對於兩段之顯像單元，搬運機械臂A1 被共通化之構成。 並且，在處理區塊S2是如第12圖及第14圖所示，設 置支架單元U5，來自載體區塊S1之晶圓，藉由被設置在 上述支架單元U5附近之升降自如之第1交接機械臂D1， 順序被搬運至上述支架單元U5之一個交接單元’例如第2 區塊（BCT層）B2之對應的交接單元CPL2。接著，晶圓W 藉由第2區塊（BCT層）B2內之搬運機械臂A2，自該交接單 元CPL2搬運至各單元（反射防止膜單元及加熱、冷卻系統 之處理單元群），在該些單元形成反射防止膜。 之後，晶圓W經被設置在支架單元U5之交接單元 BF2、上述支架單元U5附近之升降自如之第1交接機械臂 D1、支架單元U5之交接單元CPL3及搬運機械臂A3’被 搬入至第3區塊（COT層）’形成光阻膜。並且’晶圓W是 -23- 201250771 從搬運機械臂A3被交給至—支架單元U5之交接單元BF3 。並且，形成有光阻膜之晶圓W也有在第4區塊（TCT層 )B4形成反射防止膜之情形》此情形，晶圓W經交接單元 CPL4而被交給至搬運機械臂A4，形成反射防止膜之後藉 由搬運機械臂A4，被交接至交接單元TRS4。 另外，在DEV層B1之上部，設置有用以將晶圓W自 被設置於支架U5之交接單元CPL11直接搬運至設置在支 架單元U6之交接單元CPL12之專用搬運手段之穿梭機械 臂E。形成光阻膜或反射防止膜之晶圓W經交接機械臂 D1自交接單元BF3' TRS4被交給至交接單元CPL11，自此 .藉由穿梭機械臂E直接搬運至支架單元U6之交接單元 CPL12。在此，如第12圖所示般，被設置在支架單元U6和 洗淨裝置1之間的搬運手段之交接機械臂D2具備有構成旋 轉、進退、升降自如，各專門搬運洗淨前後之晶圓W之 例如兩個機械臂。晶圓w是藉由交接機械臂D2之洗淨前 專用之機械臂，自TRS 12取出，被搬入至洗淨裝置1內接 受背面洗淨。完成洗淨之晶圓W由交接機械臂D2之洗淨 後之專用機械臂載置於TRS 13之後’被取入至介面區塊S3 。並且，第14圖中附CPL的交接單元兼作調溫用之冷卻單 元，附BF之交接單元則兼作可載置多數片晶圓W之緩衝 單元》 接著，藉由介面機械臂B搬運至曝光裝置S4，在此 ，執行特定曝光處理之後，載置於支架單元U6之交接單 元TRS6而返回至處理區塊S2。接著，晶圓W在第1區塊 -24- 201250771 (DEV層）B1執行顯像處理，藉由搬運機相 支架單元U5之交接單元TRS1。之後，經 回至載體100。並且，在第12圖中，U1至 熱部和冷卻部之熱系統單元群。 並且，雖然表示第12圖至第14圖所示 置’是在介面區塊S3之入口部設置實施 淨裝置1之例，但是設置洗淨裝置1之位置 。例如，即使在介面區塊S3內設置該洗子 使構成設置於處理區塊S2之入口部，例$ 將形成光阻膜之前的晶_予以背面洗淨亦 載體區塊S1內亦可。 並且，可適用本實施形態所涉及之衫 並不限定於塗佈、顯像裝置。例如，即使 入後之退火工程之熱處理裝置，亦可以途 。當直接對微粒附著於晶圓 W之背面執 在該工程中，微粒進入至晶圓背面，在該 晶體之間形成電流路。因此，於該工程前 之背面洗淨，可以提升製品之良率。 在此，使用第1圖至第1 1圖所說明之 中，因防止自晶圓W飛散之洗淨液與上 衝突產生霧而成爲污染源，故上杯罩41之 洗淨液不極力彈回之構件所構成爲佳。例 之上杯罩4 1是藉由將由液滴難以彈回之材 構件44內貼於上杯罩41之內壁面，成爲抑 ξ臂A1被交接至 交接機械臂C返 U4爲疊層各個加 之塗佈、顯像裝 形態所涉及之洗 並不限定於該例 爭裝置1亦可，即 口支架單元U5而 可，即使設置在 ό淨裝置1之裝置 執行例如離子注 i用本洗淨裝置1 行退火工程時， 微粒和表面之電 ，藉由將晶圓w 洗淨裝置1、100 杯罩41之內壁面 內壁面以飛散之 如，第1 5圖所示 料所構成之覆蓋 制產生霧之構成 25- 201250771 。作爲如此材料之具體例有例如添加親水劑等施予親水處 理之樹脂製之多孔質材料（多孔質）樹脂，或予以噴砂使內 壁面粗面化之氧化鋁等之陶瓷材料等。再者，於如上述般 內貼之時，上杯罩41雖然由例如聚丙烯等之材料所構成， 但是即使藉由先前已述之多孔質材料或陶瓷構成上杯罩41 全體亦可。並且，在第15圖中，省略氣刀31等之記載。 再者，在既已說明之洗淨裝置1、1 〇〇設置由例如於晶 圓 W之背面洗淨時施加於刷具5之推壓力或施加於刷具5 之支撐部5 1之扭力等，並測量刷具5與晶圓W之背面接觸 之力的測量器（測量手段），和使刷具5之支撐部51升降之升 降機構（升降手段），和既已說明之控制部6所構成之洗淨壓 控制機構，在晶圓W之背面即使以刷具5接觸至晶圓W背 面之力在事先所設定之範圍內之値幾乎成爲一定之方式， 使刷具5升降亦可。再者，即使取代刷具5之升降，藉由使 吸附墊2或旋轉夾具3升降，使晶圓W上下，控制刷具5接 觸之力亦可。將藉由刷具5與晶圓W接觸之力保持一定， 使微粒之除去率安定，並且因不對晶圓W施予過大力量 ，故可以防止晶圓W自吸附墊2或旋轉夾具3脫離。 如此一來，將刷具5推抵至晶圓W背面而執行洗淨之 手法由其於晶圓W背面爲親水性之時特別有效。另外， 對於晶圓W之表面，有藉由與疏水化處理劑之蒸氣接觸 ，執行提升與光阻膜之密接性之疏水化處理之情形。當於 該疏水化處理之時，處理劑之蒸氣之一部份流入晶圓之背 面側時，例如晶圓W之背面周緣部也被疏水化。在被疏 -26- 201250771 水化之區域，洗淨液難以充分遍及四處，當直接推壓刷 5而使旋轉時，刷具之纖維被掘削而產生多量微粒，有 染晶圓W之虞。在此，於洗淨被疏水化處理之晶圓W 周緣區域時等，例如第1 6圖所示般，在刷具5之前端和 圓W之背面之間以產生例如1 mm以下之間隙之方式配 刷具5，在該狀態下，自先前已述之洗淨噴嘴5a供給洗 液使刷具5旋轉而執行洗淨即可。若藉由該手法，因利 藉由刷具5之旋轉激烈攪拌之洗淨液之水勢而執行洗淨 故可抑制產生來自刷具5之微粒，並執行洗淨。 再者，因對應於上述疏水化處理之晶圓W，故即使 例如下杯罩43設置UV燈17，藉由該UV燈17對晶圓W 周緣區域例如由基板端至中心側25mm照射紫外線，執 分解疏水化劑之親水化處理後執行洗淨亦可V。於此時 例如將晶圓W從吸附墊2轉接至旋轉夾具之後，一面使 轉夾具32旋轉，一面藉由UV光以特定寬度掃描晶圓W 周緣區域，依此可以使該區域全體親水化。在此，UV 17即使將例如施予防水處理設置在下杯罩43內亦可，在 杯罩43之底面設置透過UV光之玻璃窗，在該下方側設 UV燈亦可。並且，照射UV光之區域並不限定於晶圓 背面之周緣區域，即使照射於例如晶圓W之背面當然 可。並且，在第17圖中，省略氣刀31等。再者，即使設 在UV燈以外之處，藉由導光光纖設置照射頭亦可。 再者，在氣刀31內部中，由於自氣刀31所噴射之氣 形成上昇氣流，有自旋轉夾具3之驅動機構33或支撐消 具 污 之 晶 置 淨 用 在 之 行 旋 之 燈 下 置 W 亦 置 體 -27- 32 201250771 之升降機構32a等所產生之微粒藉由該上昇氣流流出至氣 刀外側之虞。在此，即使將例如氣刀3 1內側之環境予以抽 氣排氣，藉由將藉由該氣刀31和晶圓W背面所包圍之空 間保減壓環境，抑制上昇氣流之產生亦可。 在相同之氣刀31中，爲了藉由該氣刀31吹散來自刷具 5側之洗淨液全體，必須噴射大量氣體，消耗能量變多， 並且也有由於大量氣體所吹散之洗淨液成爲霧而成爲新污 染源之情形。在此，例如第1 8圖所示般，即使以描畫出遮 蔽氣刀31和刷具5之間的軌跡之方式，設置吐出DIW等之 洗淨水之流體吐出手段之輔助沖洗機構34，藉由改變依據 該純水之流.路自刷具5側流出之洗淨液之流動方向，使朝 向氣刀31之洗淨液之流動氣勢變弱亦可。依此，減少爲了 吹散淨液所需之氣體量，可以減少能量消耗，並且可抑制 產生霧。而且，即使取代吐出洗淨液之輔助沖洗機構34, 將吐出壓縮氣體而遮蔽氣刀3 1和刷具5之間之噴嘴當作流 體吐出手段而予以設置亦可。 接著，針對第1保持手段之吸附墊2，吸附墊2之平面 形狀並不限定於第2圖所示之細長長方形。例如，第19圖 所示般，於載置晶圓W時，即使使用具備與該晶圓W構 成同心圓之圓弧狀之吸附保持面之吸附墊2亦可。如此之 形狀之吸附墊2因形成於對向之吸附墊2間之區域面積變寬 ，故可以使洗淨液遍及更寬區域，並且於移動刷具5時也 難以造成妨礙》 再者，例如晶圓W載置於旋轉夾具3上洗淨之期間中 201250771 ，吸附墊2因退壁至晶圓W之下方’故在吸附塾2表面滴 下洗淨液。因此，當將吸附墊2之吸引管連接於例如工場 之真空管線時’洗淨液藉由設置在吸附墊2表面之吸附孔 2a而流入，成爲使真空管線之真空度下降之主要原因。在 此，即使如第20圖所示般，在吸附墊2之吸引管60介設截 留槽61，將流入吸引管60之洗淨液捕捉於該截留槽60內防 止流出至下流側亦可。再者，即使又如第2 0圖所示般’將 該吸引管60連接於噴射器62，藉由來自噴射器60之排氣與 工場排氣管線連接，不利用工場之真空管線執行晶圓W 之吸附亦可。 如上述般，.當以洗淨液濕潤吸附墊2表面之‘狀態直接 保持晶圓W時，則有吸附墊2之吸附力下降於洗淨中晶圓 W脫離之虞，再者，有骯髒之洗淨液污染晶圓W背面， 使洗淨後之晶圓W之清淨度下降之情形。在此，即使如 第21圖（a)、第21圖（b)所示般，在上杯罩41設置例如氣幕 噴嘴45，例如完成晶圓W洗淨，至下一個晶圓W被搬入 之期間中，吹出氣體，使吸附墊2表面之洗淨液吹散亦可 。並且，第21圖（a)、第21圖（b)中，省略氣刀31等之記載 【圖式簡單說明】 第1圖表示本發明所涉及之洗淨裝置之斜視圖。 第2圖爲上述洗淨裝置之平面圖。 第3圖爲上述洗淨裝置之縱剖面圖。 -29- 201250771 第4圖爲表示氣刀之構成之斜視圖。 第5圖爲用以說明上述洗淨裝置之動作的第1工程圖。 第6圖爲用以說明上述洗淨裝置之動作的第2工程圖。 第7圖爲表示洗淨時之晶圓背面之樣子的說明圖。 第8圖爲表示在各動作中被洗淨之區域的平面圖。 第9圖爲第2實施形態所涉及之洗淨裝置之平面圖。 第10圖爲用以說明上述第2實施形態所涉及之洗淨裝 置之動作的第1工程圖。 第1 1圖爲用以說明上述第2實施形態所涉及之洗淨裝 置之動作的第2工程圖。 第12圖爲表示適用上述洗淨裝置之塗佈、顯像裝置之 實施形態之平面圖。 第13圖爲上述塗佈、顯像裝置之斜視圖。 第14圖爲上述塗佈、顯像裝置之縱剖面圖。 第15圖爲將覆蓋構件內貼於內壁面之上杯罩之縱剖面 圖。 第1 6圖爲在晶圓背面和刷具前端之間設置間隙而執行 洗淨之實施形態之說明圖。 第1 7圖爲對被疏水化之晶圓背面側之周緣區域照射 UV光之實施形態之說明圖。 第18圖爲設置用以刪減氣刀之氣體消耗量之輔助沖洗 機構之實施形態之說明圖。 第1 9圖爲使用平面形狀爲圓弧狀之吸附墊的實施形態 之說明圖 -30--14- 201250771 will be explained with reference to Figs. 5 to 8. Fig. 5 and Fig. 6 are longitudinal cross-sectional views for explaining the respective operations of the cleaning device _ 1 for cleaning the back surface of the wafer W. Fig. 7 is an explanatory view showing the appearance of the back surface of the wafer w at the time of cleaning. Further, Fig. 8 is a plan view schematically showing a region where the wafer W is cleaned in various states held by the adsorption power 2 or the rotating jig 3. Further, in these drawings, the description of the UV lamp 12, the air blowing nozzle 13, and the like is appropriately omitted in order to facilitate the drawing. As shown in Fig. 5 (a), for example, the horseshoe-shaped transport means (second transfer robot D2) carries the wafer W to be processed into the cleaning apparatus 1 and is above the opening 41a of the upper cup cover 41. When the stop pin 32 is lifted from below the rotating jig 3, it stands by under the conveyance means. The transport means lowers the support pin 32 and delivers the wafer W to the support pin 32 to exit the cleaning device 1. At this time, the adsorption pad 2 stands by at a position where the surface of the wafer W is held higher than the upper surface of the brush 5, and the rotating jig 3 is retracted to a position lower than the upper surface of the brush 5. With such a positional relationship, when the support pin 32 is lowered, the wafer W is first delivered to the adsorption pad (Fig. 5(b)). Thereafter, the adsorption pad 2 adsorbs and holds the wafer w so as not to move the brush 5 from the back surface, and keeps the wafer w directly moved to the right direction. Then, after transporting to a position where the wafer w is determined in advance (for example, a position where the left end of the air knife 3 1 slightly coincides with the left end of the wafer W), the adsorption pad 2 is lowered, and the back surface of the wafer W is pressed onto the brush 5 (the 5 Figure (c)). Next, after the air knife 31 is operated to prevent the cleaning liquid from being coated and adhered to the surface of the rotating jig 3, the cleaning liquid is supplied from the cleaning liquid nozzle 5a at the tip end of the support portion 51, and the brush 5 is rotated to start cleaning the wafer W. Wash the back. Back Wash -15- 201250771 The net is performed by a combination of the movement of the wafer W of the adsorption pad 2 and the movement of the brush 5. Specifically, as shown in FIG. 8( a ), when the brush 5 is reciprocated in the Y direction in the drawing and the moving direction of the brush 5 is switched, the adsorption pad 2 is only shorter than the diameter of the brush 5 . Move to the left X direction. According to this, the brush 5 is drawn on the back surface of the wafer w by the trajectory indicated by the arrow. 'You can wash the four areas of the area T 1 painted with the upper left oblique line in the same figure. Here, during the cleaning period, As shown in Fig. 7, the entire back surface of the wafer W is covered with the liquid film F of the cleaning liquid. The particles removed by the brush 5 are flushed to the lower cup simultaneously with the cleaning liquid flowing from the back surface of the wafer W. Cover 43. Further, the gas is ejected from the discharge port 31a of the air knife 31 toward the back surface of the wafer W, and the cleaning liquid is blown toward the outer side of the air knife 3 1, and the back surface of the wafer W facing the air knife 31 is kept dry. . With such a configuration, it is possible to prevent the cleaning liquid covering the back surface of the wafer W from being coated on the inner side of the air knife 31. As a result, the surface of the rotary jig 3 is often maintained in a dry state, and contamination due to the treated cleaning liquid or watermark formation can be prevented. When the cleaning of the above region T1 is completed, the adsorption pad 2 is moved so that the central portion of the wafer W is positioned above the rotating jig 3 (Fig. 6(a)), and then, the transfer of the wafer W from the adsorption pad 2 to the rotating jig is performed. 3. The transfer of the wafer W is performed, for example, by operating the air knife 31, directly stopping the movement or rotation of the brush 5, supplying the cleaning liquid, releasing the wafer W by the adsorption pad 2, and raising the retracting rotating jig 3 The back surface of the wafer W is supported, and then performed by retracting the adsorption pad 2 to the lower side. Since the rotating jig 3 that has received the wafer W adsorbs and holds the wafer W at substantially the same height as the adsorption pad 2, the brush 5 is pressed against the wafer W from -16 to 201250771. Here, the brush 5 is rotated again, and the back surface is washed by the supply washing (Fig. 6(b)). At this time, the combination of the rotation of the back surface washing and the movement of the brush 5 is performed. Specifically, as shown in (b), first, the brush 5 is moved to a position where the crystal field can be cleaned, and then the wafer W is slowly rotated, and the wafer W-the screwdriver 5 is moved to be washed by the previous action. In the annular region, the portion having the diameter of 5 is washed on the inner circumference side, and the operation is repeated to draw the concentric circular track wafer W back surface, and the upper right oblique line in the same figure can be washed. T2 is everywhere. Here, the area of the combined region T1 and the region T2 includes the entire back surface of the wafer W as shown, and the size or moving range of each machine is adjusted so as not to cause a space. In the period in which the cleaning jig 3 holds the wafer W and performs the cleaning, the cleaning liquid nozzle 5a is supplied from the side cleaning liquid nozzle 14 in the sixth drawing (b). When the W area of the wafer and the dry area are mixed, since the washing liquid is dried by the watermark, the washing liquid is prevented from generating watermarks everywhere, and when the cleaning brush 5 of the entire back surface of the wafer W is completed, Rotate or move, supply the washing liquid, rotate the clothes, and move to the drying action of the washing liquid. The spin-drying is performed by rotating the spin-on cleaning liquid attached to the back surface of the wafer W, and suppressing the generation of the watermark by drying the wet wafer W in one breath. At this time, the air blown liquid that has been retracted to the upper side is again swept, and the rotating jig 3f, for example, the outermost turn of the eighth Sw, allows the brush to operate in the same manner only with the brush. In the case of moving the painting area, the image is cleaned in the eighth picture (b). If the cleaning is performed on the left side of the air knife 31, the surface of the air knife 31 is wet. Rotate the f clamp 3 at high speed. As previously dried, the nozzle 13 is lowered, -17-201250771. At the same time, the wind drum nozzle 5b of the lateral side of the brush 5 is placed on the peripheral edge of the wafer W, and the support portion 51 is moved by the upper surface of the wafer peripheral portion. Blow out the gas below and promote drying. Further, in the second region held by the rotary jig 3, the spin-drying is not performed, but in the state of being dried by the air knife 31, the water is hardly generated due to contact with the rotating jig 3. By the above-described operation, the entire back surface of the wafer W is washed and dried, and the wafer W is transferred to the transporting means in the opposite operation to the loading and carried out. At this time, the UV lamp 12 shown in FIGS. 1 to 3 is turned on, and ultraviolet rays are irradiated from the lower side of the horseshoe-shaped conveying means toward the back surface of the wafer W, and even if the particles are adhered, for example, the organic matter is irradiated with ultraviolet rays. It is decomposed by irradiation, so that shrinkage of such a type of particles can reduce the influence of defocusing or the like. In parallel with the unloading operation of the wafer W, the adsorption pad 2 or the rotating jig 3 is moved to the position shown in Fig. 5(a), and the next wafer W is carried in. Then, the operations described in the fifth to eighth drawings are repeated, and the plurality of wafers W are sequentially washed. Next, the second embodiment will be described with reference to Figs. 9 to 11 . Fig. 9 is a plan view showing a configuration of a cleaning device 1 according to a second embodiment, and Figs. 10 and 11 are longitudinal sectional views showing the action. In the drawings, the first embodiment is described. The same configuration is given to the same symbols as those used in the first to eighth figures. In the cleaning apparatus 100 according to the second embodiment, the rotating jig 3 belonging to the second substrate holding means is retracted to a position below the second region of the wafer W, and the wafer W is moved in the lateral direction with respect to the rotating jig. 1 Embodiment -18 - 201250771 is different. In the second embodiment, the "well 2 〇 is fixed in the Χ direction" can be raised and lowered only in the Ζ direction. The elevating mechanism 27 (refer to FIG. 1) for raising and lowering the well 20 and the non-drawing elevating mechanism 'for raising and lowering the rotating jig are configured to elevate and lower the second substrate holding means relative to the first substrate holding means means. Further, the brush 5 has its support portion 51 fixed to the lower cup cover 43 at the proximal end side. Since the support portion 51 is configured to be pivotable about the support shaft of the base end portion, the wafer W can be moved from the center region (second region) to the support by the brush 5 without moving the wafer W in the lateral direction. The base end side of the portion 51. Further, the support portion 72 that is stretchable on the opposite side of the brush 5 is attached to the lower cup cover 43 to prevent water from being washed back to the lower rotating jig 3 in the cleaning of the second region. The cover member 71 made of, for example, a fluororesin. Further, the support portion 72 is attached to the drying nozzle 73' which completes the task of drying the second region, and the gas can be ejected toward the second region. Further, in the present embodiment, since the air knife 31 is not provided around the rotating jig 3, a gas such as a nitrogen gas is ejected downward from the outer edge portion of the covering member 71, so that the mist at the time of washing does not adhere. Rotating the clamp 3. Next, when the operation of the cleaning apparatus 100 according to the second embodiment is described, as shown in FIG. 10( a ), when the wafer W is carried in, the rotating jig 3 is retracted to the lower cup cover 43 . Below, the cover member 71 is further retracted to the side more than the upper side of the rotating jig 3. In this state, the lift pins 32 are moved up and down, the wafer W is received from the transport means D2, and the wafer W is adsorbed and held on the adsorption pad 2. Next, as shown in FIG. 10(b), the lift pin 32 is retracted to the position of the rotary clamp -19-201250771, and the cover member 71 is advanced. After being placed above the rotary jig 3, the brush 5 is moved to The center of the wafer W is slightly. Then, the adsorption pad 2 is lowered to start washing the central portion of the wafer W including the second region. At this time, the rotating jig 3 is retracted to the lower side of the second region during cleaning, but the covering member 71 becomes an umbrella, and the covering member 71 ejects gas downward, and since the mist does not adhere, the rotating jig 3 remains dry. . When the cleaning of the central portion of the wafer W is completed, the brush 5 is retracted to the side, and the gas is ejected from the drying nozzle 73 toward the second region, thereby drying the region. Then, as shown in Fig. 11, after the covering member 71 is retracted to the side, the rotating jig 3 is raised, and the wafer W is transferred from the adsorption pad 2 to the rotating jig 3, and the cleaning and drying are completed. 2 areas. Then, while the rotation of the wafer W and the movement of the brush 5 are combined, the back surface of the wafer W other than the second region which has not been cleaned is washed. At this time, since the covering member 71 is retracted to the side, the lift pin 32 may not be in contact with the washing liquid even if it is stored in the sheath body or the like, for example. When the cleaning is completed, the rotating jig 3 is rotated and dried by the wafer W, and then dried, and the transfer means 32 is carried out to the outside by means of the operation opposite to the loading and unloading, and the wafer W is carried out to the cleaning. The device 100 is external and "not shown in Fig. 9, but at this time, it is of course possible to perform ultraviolet irradiation by a UV lamp on the back surface of the wafer W. According to the cleaning device according to the embodiment! , 1〇〇, has the following effects. Since the wafer W is supported by the back surface of the wafer W and is directly washed in such a state, it is not necessary to provide a space for reversing the wafer W or to perform the wafer w reversal operation except for the cleaning device 1. Between -20- 201250771. As a result, it is possible to reduce the size of the coating and developing device provided with the cleaning device 1 and 100 compared to the conventional type. Further, since the cleaning device 1 and 100 transfer the wafer w between the two substrate holding means (the adsorption pad 2 and the rotating jig 3), the cleaning pad 2 or the rotating jig 3 may not be caused to be covered. Invalid space that cannot be washed. Accordingly, since the generation of the ineffective space is avoided, it is not necessary to mechanically hold the peripheral portion of the wafer W, and the peripheral portion of the wafer W is not damaged, and the cleaning can be performed, and the generation of particles or the formation of the photoresist film can be prevented. Damage contributes to the yield of the lifted product. < Further, in the cleaning apparatuses 1 and 100 according to the present embodiment, after the cleaning is completed, the cleaning liquid adhering to the wafer W is dried by drying the air, and is disposed around the rotating jig 3 When the wafer W is delivered to the rotating jig 3, the air knife 31 contacts the surface of the rotating jig 3 and the back surface (second region) of the substrate supported by the rotating jig. By these mechanisms, the watermark generated in the wafer W or the rotating jig 3 is suppressed, and the back surface of the wafer W after the cleaning can be prevented from being contaminated again. Further, in the cleaning device 1 and 100, the cleaning member is a brush 5 having a high cleaning effect, but the cleaning member is not limited thereto. For example, even if a two-fluid nozzle, a spray nozzle, a mechanical nozzle or the like is used, a cleaning member of a type in which particulates are removed by blowing a cleaning liquid or the like may be used. Further, in the embodiment, the rotary brush 5 is exemplified, but the vibration type brush may be used instead of the brush type, and the type of the cleaning liquid is not limited to DIW, and even other cleaning liquids may be used. . Further, as shown in the embodiment -21 - 201250771, the substrate holding means provided in the cleaning apparatus is not limited to the two types (the adsorption pad 2 and the rotating jig 3) as in the embodiment. For example, three or more types of substrate holding means may be provided, and a substrate may be transferred between the holding means twice or more. At this time, it can be explained that the final substrate is held as the second substrate holding means, and the substrate is held as the first substrate holding means. Next, an example in which the above-described cleaning device 1 is applied to the developing device will be briefly described. Fig. 12 is a plan view showing a system for attaching an exposure apparatus to a coating and developing apparatus, and Fig. 13 is a perspective view of the same system. Furthermore, Fig. 14 is a longitudinal sectional view of the same system. The coating and developing device is provided with a carrier block S1, and the transfer robot C is taken out from the sealed carrier 1 placed on the mounting table 101, and the wafer W is taken out and delivered to the processing block S2' and The transfer robot C receives the processed wafer W from the processing block S2 and returns to the carrier 100. The cleaning device W or the cleaning device 100' according to the present embodiment is the same as when the wafer w is transferred from the processing block S2 to the exposure device S4, that is, as shown in Fig. 12 The entrance portion of the interface block S3 performs the back surface cleaning of the wafer W to be processed. The processing block S2 is formed in the first block (DEV layer) B1 for performing development processing by the lower side as shown in FIG. 13 and formed on the lower layer side of the photoresist film. a second block (BCT layer) B2 for forming a reflection preventing film, and a third block (COT layer) B3 for performing coating of the photoresist film, for performing formation on the upper layer side of the photoresist film The fourth block (TCT layer) B4 is formed by the formation of the anti-reflection film. The second block (BCT layer) B2 and the fourth block (TCT layer) B4 are coatings according to the present embodiment in which the coating liquid for forming the respective anti-reflection films is applied by spin coating -22-201250771. a unit of processing unit and a heating unit of a heating and cooling system for performing pre-treatment and post-processing of the processing performed by the coating unit, and disposed between the coating unit and the processing unit group, The transport robots A2 and A4 that perform the transfer of the wafer w are configured. Even for the third block (COT layer) B 3, the above-described chemical liquid is the same as the photoresist liquid, and the first block (DEV layer) B1 is stacked in one DEV layer B1. Two layers of the developing unit 110. Then, in the DEV layer B1, a transfer robot A1 for transporting the wafer W to the two-layer developing units 110 is provided. In other words, the transport robot arm A1 is common to the development unit of the two stages. Further, in the processing block S2, as shown in FIGS. 12 and 14, the holder unit U5 is provided, and the wafer from the carrier block S1 is lifted and lowered by the first transfer provided in the vicinity of the holder unit U5. The robot arm D1 is sequentially transported to a delivery unit CPL2 corresponding to one of the above-described bracket units U5, for example, the second block (BCT layer) B2. Next, the wafer W is transported from the transfer unit CPL2 to each unit (the anti-reflection film unit and the processing unit group of the heating and cooling system) by the transfer robot A2 in the second block (BCT layer) B2. These units form an antireflection film. Thereafter, the wafer W is carried in the transfer unit BF2 provided in the holder unit U5, the first transfer robot D1 in the vicinity of the holder unit U5, the delivery unit CPL3 of the holder unit U5, and the transfer robot A3'. The 3 block (COT layer) 'forms a photoresist film. And the wafer W is -23-201250771 and is delivered from the transport robot A3 to the delivery unit BF3 of the bracket unit U5. Further, the wafer W on which the photoresist film is formed may have an anti-reflection film formed on the fourth block (TCT layer) B4. In this case, the wafer W is transferred to the transfer robot A4 via the transfer unit CPL4, and is formed. The anti-reflection film is then transferred to the delivery unit TRS4 by the transfer robot A4. Further, a shuttle robot arm E for transporting the wafer W directly from the delivery unit CPL11 provided in the holder U5 to a dedicated transport means provided in the delivery unit CPL12 of the holder unit U6 is provided in the upper portion of the DEV layer B1. The wafer W on which the photoresist film or the anti-reflection film is formed is delivered to the delivery unit CPL11 via the transfer robot D1 from the transfer unit BF3' TRS4, and is directly transported to the transfer unit CPL12 of the holder unit U6 by the shuttle arm E. . Here, as shown in Fig. 12, the transfer robot D2 of the transport means provided between the holder unit U6 and the cleaning device 1 is provided with a structure that rotates, advances and retreats, and moves up and down. For example, two robot arms of the circle W. The wafer w is taken out from the TRS 12 by the robot arm dedicated to the cleaning of the transfer robot D2, and is carried into the cleaning device 1 to be washed by the back surface. The wafer W which has been cleaned is cleaned by the transfer robot D2 and placed after the TRS 13 is placed in the interface block S3. Further, the transfer unit with CPL in Fig. 14 also serves as a cooling unit for temperature adjustment, and the transfer unit with BF also serves as a buffer unit for mounting a plurality of wafers W. Next, the transfer device is transported to the exposure device by the interface robot B. S4, here, after performing the specific exposure processing, it is placed on the delivery unit TRS6 of the rack unit U6 and returned to the processing block S2. Next, the wafer W is subjected to development processing in the first block -24 - 201250771 (DEV layer) B1 by the transfer unit TRS1 of the carrier phase holder unit U5. Thereafter, it is returned to the carrier 100. Further, in Fig. 12, the thermal system unit group of U1 to the hot portion and the cooling portion. Further, although the example shown in Figs. 12 to 14 is an example in which the cleaning device 1 is provided at the entrance of the interface block S3, the position of the cleaning device 1 is set. For example, even if the shampoo is disposed in the interface block S3 so as to be disposed at the entrance portion of the processing block S2, the crystal before the photoresist film is formed may be back-washed in the carrier block S1. Further, the shirt to which the present embodiment is applied is not limited to the application and development apparatus. For example, even if the heat treatment device for the subsequent annealing process is available, it is possible. When the particles are directly attached to the back side of the wafer W in this process, the particles enter the back side of the wafer, forming a current path between the crystals. Therefore, washing the back of the project can improve the yield of the product. Here, in the description of FIGS. 1 to 11 , since the cleaning liquid which is prevented from scattering from the wafer W is prevented from being fogged and becomes a source of contamination, the cleaning liquid of the upper cup cover 41 does not rebound as much as possible. The components are preferably constructed. For example, the cup cover 4 1 is attached to the inner wall surface of the upper cup cover 41 by the material member 44 which is difficult to bounce back by the liquid droplets, so that the depression arm A1 is transferred to the transfer robot arm C and the U4 is laminated. The washing according to the coating and developing device configuration is not limited to the example device 1, that is, the mouth holder unit U5, and even the device provided in the cleaning device 1 performs, for example, the ion cleaning device. In the 1 row annealing process, the particles and the surface of the surface are scattered by the inner wall surface of the inner wall surface of the wafer w cleaning device 1, 100 cup cover 41, and the covering system formed by the material shown in Fig. 15 is produced. The composition of the fog 25-201250771. Specific examples of such a material include a porous material (porous) resin obtained by adding a hydrophilic agent such as a hydrophilic agent, or a ceramic material such as alumina which is sandblasted to roughen the inner wall surface. Further, when the inner cup cover 41 is made of a material such as polypropylene, the upper cup cover 41 may be formed of the upper cup cover 41 by the porous material or ceramic which has been described above. Further, in Fig. 15, the description of the air knife 31 and the like is omitted. Further, in the cleaning devices 1 and 1 described above, for example, the pressing force applied to the brush 5 at the time of washing the back surface of the wafer W or the torsion force applied to the support portion 51 of the brush 5 is set. And a measuring device (measuring means) for measuring the force of the brush 5 in contact with the back surface of the wafer W, and a lifting mechanism (elevating means) for raising and lowering the supporting portion 51 of the brush 5, and the control portion 6 which has been described The cleaning pressure control mechanism is configured such that the force of the brush 5 contacting the back surface of the wafer W is almost constant within the range set in advance on the back surface of the wafer W, and the brush 5 can be moved up and down. Further, even if the suction pad 5 or the rotating jig 3 is moved up and down instead of the raising and lowering of the brush 5, the wafer W can be moved up and down, and the force of the brush 5 can be controlled to be contacted. The force by which the brush 5 is brought into contact with the wafer W is kept constant, the removal rate of the fine particles is stabilized, and since the wafer W is not excessively applied, the wafer W can be prevented from being detached from the adsorption pad 2 or the rotating jig 3. In this way, the method of performing the cleaning by pushing the brush 5 against the back surface of the wafer W is particularly effective when it is hydrophilic on the back surface of the wafer W. Further, on the surface of the wafer W, a hydrophobic treatment for improving the adhesion to the photoresist film is performed by contact with the vapor of the hydrophobizing agent. At the time of the hydrophobization treatment, when a part of the vapor of the treating agent flows into the back side of the wafer, for example, the peripheral portion of the back surface of the wafer W is also hydrophobized. In the area where it is hydrated -26- 201250771, it is difficult to fully wash the cleaning liquid. When the brush 5 is directly pushed and rotated, the fibers of the brush are boring to produce a large amount of particles, and the wafer W is dyed. Here, when the peripheral region of the wafer W to be hydrophobized is washed, for example, as shown in FIG. 6, a gap of, for example, 1 mm or less is generated between the front end of the brush 5 and the back surface of the circle W. In this state, the brush 5 is supplied from the washing nozzle 5a which has been described above, and the brush 5 is rotated to perform washing. According to this method, since the washing is performed by the water potential of the washing liquid which is vigorously stirred by the rotation of the brush 5, the generation of the particles from the brush 5 can be suppressed and the washing can be performed. Further, since the wafer W corresponding to the hydrophobization treatment is provided, even if, for example, the lower cup cover 43 is provided with the UV lamp 17, the UV lamp 17 irradiates the peripheral edge of the wafer W with ultraviolet rays, for example, from the substrate end to the center side of 25 mm. After performing the hydrophilization treatment of the decomposition hydrophobizing agent, it is also possible to perform the cleaning. At this time, for example, after the wafer W is transferred from the adsorption pad 2 to the rotating jig, the rotating jig 32 is rotated, and the peripheral region of the wafer W is scanned with a specific width by UV light, whereby the entire region can be hydrophilized. . Here, the UV 17 may be provided in the lower cup cover 43 by, for example, a water-repellent treatment, and a glass window that transmits UV light may be provided on the bottom surface of the cup cover 43, and a UV lamp may be provided on the lower side. Further, the region where the UV light is irradiated is not limited to the peripheral region of the back surface of the wafer, and it is of course possible to irradiate, for example, the back surface of the wafer W. Further, in Fig. 17, the air knife 31 and the like are omitted. Further, even if it is provided outside the UV lamp, the irradiation head may be provided by the light guiding fiber. Further, in the inside of the air knife 31, since the air ejected from the air knife 31 forms an ascending air current, the driving mechanism 33 of the self-rotating jig 3 or the crystal for supporting the decontamination is used for the rotation of the lamp. The particles generated by the lifting mechanism 32a and the like of the W-Embedron -27-32 201250771 flow out to the outside of the air knife by the rising airflow. Here, even if the environment inside the air knife 31 is evacuated, the space in which the air knife 31 and the back surface of the wafer W are surrounded can be prevented from being generated. In the same air knife 31, in order to blow off the entire cleaning liquid from the side of the brush 5 by the air knife 31, a large amount of gas must be ejected, energy consumption is increased, and there is also a washing liquid which is blown off by a large amount of gas. It becomes a situation where it becomes a new source of pollution. Here, as shown in FIG. 18, even if the trajectory between the air knife 31 and the brush 5 is drawn, the auxiliary flushing mechanism 34 that discharges the fluid discharge means of the washing water such as DIW is provided. The flow direction of the washing liquid flowing toward the air knife 31 may be weakened by changing the flow direction of the washing liquid flowing out from the side of the brush 5 in accordance with the flow of the pure water. Accordingly, the amount of gas required to blow off the clean liquid can be reduced, energy consumption can be reduced, and fog generation can be suppressed. Further, even if the auxiliary flushing mechanism 34 that discharges the cleaning liquid is replaced, the nozzle that discharges the compressed gas and shields the air knife 31 and the brush 5 may be provided as a fluid discharge means. Next, with respect to the adsorption pad 2 of the first holding means, the planar shape of the adsorption pad 2 is not limited to the elongated rectangular shape shown in Fig. 2. For example, as shown in Fig. 19, when the wafer W is placed, the adsorption pad 2 having an arc-shaped adsorption holding surface concentric with the wafer W may be used. Since the area of the area formed between the opposing adsorption pads 2 is widened by the adsorption pad 2 having such a shape, the cleaning liquid can be spread over a wider area, and it is difficult to cause an obstacle when moving the brush 5, for example. The wafer W is placed on the rotating jig 3 during the cleaning period 201250771, and the adsorption pad 2 is dropped below the wafer W. Therefore, the cleaning liquid is dripped on the surface of the adsorption crucible 2. Therefore, when the suction pipe of the adsorption pad 2 is connected to, for example, a vacuum line of a factory, the cleaning liquid flows in through the adsorption holes 2a provided on the surface of the adsorption pad 2, which causes a decrease in the degree of vacuum of the vacuum line. In this case, as shown in Fig. 20, the suction pipe 60 of the suction pad 2 is provided with the cleavage groove 61, and the cleaning liquid that has flowed into the suction pipe 60 is caught in the cleavage groove 60 to prevent the flow out to the downstream side. Further, even if the suction pipe 60 is connected to the ejector 62 as shown in Fig. 20, the exhaust gas from the ejector 60 is connected to the factory exhaust line, and the wafer is not executed by the vacuum line of the factory. The adsorption of W is also possible. As described above, when the wafer W is directly held by the state in which the surface of the adsorption pad 2 is wetted by the cleaning liquid, the adsorption force of the adsorption pad 2 is lowered, and the wafer W is detached during the cleaning. The dirty cleaning solution contaminates the back surface of the wafer W, and the cleanliness of the cleaned wafer W is lowered. Here, even as shown in Figs. 21(a) and 21(b), for example, the air curtain nozzle 45 is provided in the upper cup cover 41, for example, the wafer W is washed, and the next wafer W is carried in. During this period, the gas is blown off, and the washing liquid on the surface of the adsorption pad 2 may be blown off. In the drawings (a) and (b) of FIG. 21, the description of the air knife 31 and the like is omitted. [Brief Description of the Drawings] Fig. 1 is a perspective view showing the cleaning device according to the present invention. Fig. 2 is a plan view of the above cleaning device. Fig. 3 is a longitudinal sectional view of the above cleaning device. -29- 201250771 Figure 4 is a perspective view showing the structure of the air knife. Fig. 5 is a first engineering diagram for explaining the operation of the cleaning device. Fig. 6 is a second engineering diagram for explaining the operation of the above cleaning device. Fig. 7 is an explanatory view showing the appearance of the back surface of the wafer at the time of cleaning. Fig. 8 is a plan view showing a region which is washed in each operation. Fig. 9 is a plan view showing the cleaning device according to the second embodiment. Fig. 10 is a first engineering diagram for explaining the operation of the cleaning device according to the second embodiment. Fig. 1 is a second drawing for explaining the operation of the cleaning device according to the second embodiment. Fig. 12 is a plan view showing an embodiment of a coating and developing device to which the above cleaning device is applied. Figure 13 is a perspective view of the above coating and developing device. Fig. 14 is a longitudinal sectional view of the above coating and developing device. Fig. 15 is a longitudinal sectional view showing the cup cover attached to the inner wall surface of the covering member. Fig. 16 is an explanatory view showing an embodiment in which a gap is provided between the back surface of the wafer and the tip end of the brush to perform cleaning. Fig. 17 is an explanatory view showing an embodiment in which ultraviolet light is irradiated to the peripheral region on the back side of the wafer to be hydrophobized. Fig. 18 is an explanatory view showing an embodiment of an auxiliary flushing mechanism for reducing the gas consumption of the air knife. Fig. 19 is an explanatory view of an embodiment in which an adsorption pad having a circular arc shape is used.
St 201250771 第20圖爲將截留槽或噴射器設置在吸附墊之吸氣管之 實施形態的說明圖。 第21圖爲具備有氣幕噴嘴之上杯罩之縱剖面圖。 【主要元件符號說明】 F :液膜 W :晶圓 1 :洗淨裝置 2 :吸附墊 2 a :吸附孔 3 :旋轉夾具 3 a :吸附孔 3b :軸部 5 _刷具 5 a :洗淨液噴嘴 5b :鼓風噴嘴 6 :控制部 1 1 :燈箱 12 : UV 燈 1 3 :鼓風噴嘴 1 4 :洗淨液噴嘴 1 5 :排氣管 1 6 :排液管 20 :井桁 -31 - 201250771 21 :墊支撐部 22 :橋桁部 2 3 :皮帶 24 :捲軸 25 :驅動機構 26 :側板 27 :升降機構 27a :滑動器 27b :導軌 31 :氣刀 3 1 a :噴射口 32 :支撐銷 32a :升降機構 3 3 :旋轉夾具馬達 41 :上杯罩 4 1 a :開口部 42 :內杯罩 43 :下杯罩 51 :支撐部 52 :皮帶 53 :捲軸 54 :驅動機構 71 :覆蓋構件 72 :支撐部 -32St 201250771 Fig. 20 is an explanatory view showing an embodiment in which a trap tank or an ejector is provided in an intake pipe of an adsorption pad. Figure 21 is a longitudinal section of the cup cover with the air curtain nozzle. [Description of main component symbols] F: Liquid film W: Wafer 1: Washing device 2: Adsorption pad 2 a : Adsorption hole 3: Rotating jig 3 a : Adsorption hole 3b: Shaft portion 5 _ Brush 5 a : Washing Liquid nozzle 5b: blast nozzle 6: control unit 1 1 : light box 12: UV lamp 1 3 : blast nozzle 1 4 : cleaning liquid nozzle 1 5 : exhaust pipe 1 6 : drain pipe 20 : well 桁 -31 - 201250771 21 : pad support portion 22 : bridge portion 2 3 : belt 24 : reel 25 : drive mechanism 26 : side plate 27 : elevating mechanism 27 a : slider 27 b : guide rail 31 : air knife 3 1 a : injection port 32 : support pin 32a : Elevating mechanism 3 3 : Rotary jig motor 41 : Upper cup cover 4 1 a : Opening portion 42 : Inner cup cover 43 : Lower cup cover 51 : Support portion 52 : Belt 53 : Reel 54 : Drive mechanism 71 : Covering member 72 : Support -32
St 201250771 73 :乾燥噴嘴 1〇〇 :基板洗淨裝置 -33-St 201250771 73 : Drying nozzle 1〇〇 : Substrate cleaning device -33-