JP7148349B2 - SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Google Patents

Description

TECHNICAL FIELD The present invention relates to an apparatus and method for processing the surface of a substrate such as a wafer, and more particularly to a substrate that removes the material that forms the back surface of the substrate as well as foreign matter adhering to the substrate by bringing a scrubber into sliding contact with the back surface of the substrate. The present invention relates to a processing apparatus and a substrate processing method.

In recent years, devices such as memory circuits, logic circuits, and image sensors (for example, CMOS sensors) are becoming more highly integrated. In the process of forming these devices, foreign matter such as fine particles and dust may adhere to the devices. Foreign matter adhering to the device causes a short circuit between wirings and a malfunction of the circuit. Therefore, in order to improve the reliability of devices, it is necessary to clean the wafer on which the devices are formed to remove foreign substances on the wafer.

Foreign matter such as fine particles and dust as described above may also adhere to the back surface (non-device surface) of the wafer. If such foreign matter adheres to the back surface of the wafer, the wafer may be separated from the stage reference plane of the exposure apparatus or the wafer front surface may be tilted with respect to the stage reference plane, resulting in deviations in patterning and focal length. Become. In order to prevent such problems, it is necessary to remove the foreign matter adhering to the back surface of the wafer.

JP 2015-233091 A

A conventional polishing unit polishes the surface of a wafer while rotating the wafer by a substrate rotating mechanism (see, for example, Japanese Unexamined Patent Application Publication No. 2002-200012). The substrate rotation mechanism includes a plurality of chucks that grip the peripheral edge of the wafer, and an annular hollow motor that rotates the wafer via these chucks. The wafer is horizontally held by the chuck with the surface to be polished facing upward, and rotated together with the chuck about the axial center of the wafer by the hollow motor. A polishing head with a polishing tool is positioned above the wafer and inboard of the peripheral edge of the wafer gripped by the chuck to avoid contact with the rotating chuck. Therefore, the outermost part of the surface of the wafer is not polished, and the outermost part of the surface of the wafer needs to be polished separately by an edge polishing unit.

The polishing unit is provided in a substrate processing system capable of performing a series of steps of polishing, cleaning, and drying the surface of a wafer, for example. In such a substrate processing system, a plurality of wafers are accommodated in a wafer cassette with their back surfaces facing downward. Therefore, when polishing the back surface of the wafer in the polishing unit, it was necessary to turn the wafer upside down during the process of transporting the wafer from the wafer cassette to the polishing unit. Also, the wafer had to be inverted again before returning the polished wafer to the wafer cassette. However, when the wafer is inverted in this way, impurities in the air tend to adhere to the wafer. In addition, since the polished wafer is in a wet state, when the wafer is turned over, it is necessary to keep the cleanliness of the polishing debris generated by the polishing process on the back surface of the wafer and the contaminants removed from the back surface of the wafer. It may wrap around to the wafer surface side. In addition, since the step of inverting the wafer is repeated, the total processing time is increased and a reversing machine is required to invert the wafer, which complicates the structure of the substrate processing system.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of efficiently processing the entire back surface of a substrate including the outermost portion with the back surface of the substrate facing downward.

In one aspect, a plurality of rotatable rollers having a substrate holding surface that holds the peripheral edge of the substrate, a scrub head that presses the scrub tool against the lower surface of the substrate, and a rotating shaft that extends parallel to the axes of the plurality of rollers. , a connecting member that connects the scrub head to the rotating shaft, a head rotating mechanism that rotates the rotating shaft, a treatment liquid nozzle provided in the scrub head, and a treatment liquid supply line that communicates with the treatment liquid nozzle. The scrub head and the processing liquid nozzle are eccentric from the axis of the rotating shaft, and the scrub head and the processing liquid nozzle are arranged to rotate when the scrubbing tool is pressed against the lower surface of the substrate. A substrate processing apparatus is provided that is configured for integral circular motion about an axis .

In one aspect, the substrate processing apparatus further includes a substrate support member arranged above the scrub head.
In one aspect, the substrate support member is a roll sponge for cleaning the top surface of the substrate or a hydrostatic plate for fluidly supporting the top surface of the substrate .
In one aspect, the scrub head has an upper surface for supporting the scrub tool, the treatment liquid nozzles are disposed within the scrub head, and liquid outlets of the treatment liquid nozzles are arranged in the scrub head. Located within the upper surface of the scrub head.
In one aspect, the substrate processing apparatus further includes a support arm that rotatably supports the rotating shaft, and a translation mechanism coupled to the support arm.

In one aspect, the substrate is rotated by rotating the plurality of rollers about their respective axes while holding the peripheral edge of the substrate with a plurality of rollers, and the scrub head and the processing liquid nozzle are integrally connected to the rotating shaft. The scrub head presses the scrubbing tool against the bottom surface of the substrate while circularly moving around and moving the support arm that supports the rotating shaft in parallel with the bottom surface of the substrate , and the processing liquid nozzle is applied to the substrate. A substrate processing method is provided, characterized by supplying a processing liquid to the lower surface of the substrate.

In one aspect, a substrate supporting member supports the upper surface of the substrate while the scrub head is pressing the scrubbing tool against the lower surface of the substrate .

In one aspect, a first holding stage having a substrate holding surface that holds a first region of the bottom surface of the substrate, a first stage rotating device that rotates the first holding stage, and a second region of the bottom surface of the substrate are held. a second holding stage having a substrate holding surface; a second stage rotating device for rotating the second holding stage; a scrub head for pressing a scrub tool against the lower surface of the substrate; a rotating shaft extending perpendicularly to the substrate holding surface; a connecting member that connects the scrub head to the rotating shaft; and a head rotating mechanism that rotates the rotating shaft. point, the second area is positioned outside the first area, and the scrub head is eccentric from the axis of the rotating shaft.

In one aspect, the substrate processing apparatus further includes a substrate support member arranged above the scrub head.
In one aspect, the substrate support member is a roll sponge for cleaning the top surface of the substrate or a hydrostatic plate for fluidly supporting the top surface of the substrate.
In one aspect, the substrate processing apparatus further includes a processing liquid nozzle provided in the scrub head, and a processing liquid supply line communicating with the processing liquid nozzle.
In one aspect, the scrub head has an upper surface for supporting the scrub tool, the treatment liquid nozzles are disposed within the scrub head, and liquid outlets of the treatment liquid nozzles are arranged in the scrub head. Located within the upper surface of the scrub head.
In one aspect, the apparatus further includes a support arm that rotatably supports the rotating shaft, and a translation mechanism that is connected to the support arm.

According to the present invention, the position of the rollers is fixed so that the rollers do not contact the scrub head during substrate processing. Therefore, the scrub head can process the entire bottom surface of the substrate by bringing the scrubber into contact with the entire bottom surface of the substrate, including the outermost portion. In addition, since it is not necessary to turn over the substrate, it is possible to prevent impurities in the air from adhering to the substrate, polishing dust and contaminants from the rear surface, and reduce the overall processing time. Furthermore, since a reversing machine for reversing the substrate is not required, the configuration of the substrate processing system can be simplified and the cost can be reduced.

1 is a schematic diagram showing an embodiment of a substrate processing apparatus; FIG. It is a top view of a substrate processing apparatus. FIG. 10 is a top view showing a state in which the support arms are positioned on the outermost side; It is a top view which shows a roller rotation mechanism. FIG. 5 is a cross-sectional view taken along line AA of FIG. 4; It is a schematic diagram which shows other embodiment of a substrate processing apparatus. FIG. 7 is a top view of the substrate processing apparatus shown in FIG. 6; FIG. 10 is a schematic diagram showing still another embodiment of the substrate processing apparatus; FIG. 9 is a top view of the substrate processing apparatus shown in FIG. 8; FIG. 10 is a schematic diagram showing still another embodiment of the substrate processing apparatus; FIG. 11 is a top view of the substrate processing apparatus shown in FIG. 10; It is a figure which shows the state which the 1st holding|maintenance stage descend|falls and the 2nd holding|maintenance stage rose. FIG. 10 is a schematic diagram showing still another embodiment of the substrate processing apparatus; FIG. 15 is a top view of the substrate processing apparatus shown in FIG. 14; It is a figure which shows the state which the 1st holding|maintenance stage descend|falls and the 2nd holding|maintenance stage rose. FIG. 10 is a schematic diagram showing still another embodiment of the substrate processing apparatus; FIG. 17 is a top view of the substrate processing apparatus shown in FIG. 16; It is a figure which shows the state which the 1st holding|maintenance stage descend|falls and the 2nd holding|maintenance stage rose.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram showing one embodiment of a substrate processing apparatus. A substrate processing apparatus shown in FIG. A scrub head 50 is provided for processing the lower surface 1 of the wafer W against the lower surface 1 .

The substrate holding unit 10 includes a plurality of rollers 11 that can contact the peripheral edge of the wafer W, and a roller rotation mechanism 12 that rotates these rollers 11 around their respective axes RC. These rollers 11 each have a wafer holding surface (substrate holding surface) 11a that holds the wafer W in contact with the peripheral portion thereof. At least part of the scrub head 50 is located below the wafer holding surface 11a. More specifically, the scrub head 50 is arranged below the wafer W held by the substrate holder 10 . The scrubbing tool 31 is a processing tool for removing the material forming the lower surface 1 of the wafer W and the foreign matter adhering to the wafer W. As shown in FIG. Examples of the scrubbing tool 31 include abrasive tapes having abrasive grains, nonwoven fabrics, sponges, abrasive cloths, and fixed abrasive grains.

In this embodiment, the bottom surface 1 of the wafer W is the back surface of the wafer W on which devices are not formed or devices are not to be formed, ie, the non-device surface. An example of the back surface of the wafer W is a silicon surface. An oxide film may be formed on the back surface of the wafer W in some cases. The top surface 2 of the wafer W is the surface on which devices are or are to be formed, ie the device side. In this embodiment, the wafer W is horizontally held by the substrate holder 10 with its back surface facing downward.

The substrate processing apparatus further includes a rotating shaft 55 extending parallel to the axis RC of each roller 11 and a connecting member 57 connecting the scrub head 50 to the rotating shaft 55 . The rotating shaft 55 and the connecting member 57 are arranged below the wafer W held by the substrate holding part 10 . The axis RC of each roller 11 and the axis of the rotating shaft 55 are perpendicular to the lower surface 1 of the wafer W held by the substrate holding part 10 . The scrub head 50 has an upper surface 50 a for supporting the scrubbing tool 31 . The connecting member 57 extends radially outward from the rotating shaft 55 . One end of the connecting member 57 is fixed to the rotary shaft 55 , and the scrub head 50 is fixed to the other end of the connecting member 57 . Therefore, the center of the scrub head 50 is separated from the axis SC of the rotating shaft 55 . That is, the scrub head 50 is eccentric from the axis SC of the rotating shaft 55 .

The rotary shaft 55 is rotatably supported by a horizontally extending support arm 60 . More specifically, the rotary shaft 55 is rotatably supported by one end of the support arm 60 , and the other end of the support arm 60 is fixed to the turning shaft 62 . The turning shaft 62 is connected to a turning motor 65 , and the turning motor 65 is connected to a support arm lifting device 67 . The swivel shaft 62 extends parallel to the axis RC of the roller 11 and the rotating shaft 55 . The support arm 60 swings about the pivot axis 62 when the pivot motor 65 rotates the pivot axis 62 clockwise and counterclockwise by a certain angle. That is, the support arm 60 swings in a direction parallel to the lower surface 1 of the wafer W (that is, the back surface of the wafer W).

In this embodiment, the pivot shaft 62 and the pivot motor 65 constitute a translation mechanism that moves the support arm 60 in parallel with the lower surface 1 of the wafer W (that is, the back surface of the wafer W). When the translation mechanism moves the support arm 60, the scrub head 50 connected to the support arm 60 moves parallel to the lower surface 1 of the wafer W while performing circular motion. In one embodiment, the translation mechanism may be a linear guide and actuator (such as a linear motor or ball screw mechanism) coupled to support arm 60 .

The support arm lifting device 67 is configured to integrally lift and lower the pivot shaft 62 and the support arm 60 . The support arm elevating device 67 can be composed of an air cylinder, or a combination of a motor and a ball screw mechanism. As the support arm 60 is raised and lowered, the rotating shaft 55, scrub head 50, and scrubbing tool 31 are also raised and lowered. When loading the wafer W into the substrate holder 10 , the support arm lifting device 67 lowers the swivel shaft 62 , the support arm 60 , the rotary shaft 55 , the scrub head 50 and the scrubbing tool 31 . When the lower surface 1 of the wafer W is processed by the scrubbing tool 31, the support arm lifting device 67 raises the pivot shaft 62, the support arm 60, the rotating shaft 55, the scrub head 50, and the scrub tool 31 so that the scrub head 50 The scrubbing tool 31 is pressed against the lower surface 1 of the wafer W.

A head rotation mechanism 70 for rotating the scrub head 50 and the rotation shaft 55 is arranged in the support arm 60 . The head rotation mechanism 70 includes a head rotation motor 71 and a torque transmission device 72 for transmitting rotation of the head rotation motor 71 to the rotation shaft 55 . Although the configuration of the torque transmission device 72 is not particularly limited, it can be configured from a combination of pulleys and belts, for example. When the head rotation motor 71 is driven, the rotating shaft 55 rotates about its axis SC, and the connecting member 57 and the scrub head 50 rotate about the rotating shaft 55 . This rotation of the scrub head 50 is a circular motion in which the scrub head 50 moves on a circular orbit about the rotation axis 55 . Compared to the case where the scrub head 50 rotates around its axis, the circular scrub head 50 can increase the relative speed of the entire scrubber 31 with respect to the wafer W, thereby enhancing processing efficiency.

A processing liquid nozzle 80 for supplying the processing liquid to the lower surface 1 of the wafer W is provided in the scrub head 50 . The shape and configuration of the processing liquid nozzle 80 are not particularly limited. The treatment liquid nozzle 80 may be a separate member from the scrub head 50 or may be integrated with the scrub head 50 . For example, the treatment liquid nozzles 80 may be fixed to the scrub head 50 or may consist of holes formed in the scrub head 50 . In one embodiment, the treatment liquid nozzles 80 may be located outside of the scrub head 50 as long as the treatment liquid nozzles 80 rotate integrally with the scrub head 50 . For example, the treatment liquid nozzles 80 may be located radially inward of the scrub head 50 . Further, multiple treatment liquid nozzles 80 may be provided in the scrub head 50 .

The substrate processing apparatus includes a processing liquid supply line 82 communicating with the processing liquid nozzle 80 . The tip of the processing liquid supply line 82 is connected to the processing liquid nozzle 80 . The processing liquid supply line 82 extends through the connecting member 57 and the rotary shaft 55 and is connected to a processing liquid supply source (not shown) via a rotary joint 90 fixed to the support arm 60 . Examples of the processing liquid supplied to the processing liquid nozzle 80 include pure water, chemical liquids (eg, etching liquid and cleaning liquid), and slurry. The treatment liquid nozzle 80 faces upward and circulates integrally with the scrub head 50 . In this embodiment, the liquid outlets of the treatment liquid nozzles 80 are located within the top surface 50 a of the scrub head 50 .

A processing liquid such as pure water is supplied to the processing liquid nozzle 80 through a processing liquid supply line 82 and discharged from the processing liquid nozzle 80 toward the lower surface 1 of the wafer W. As shown in FIG. When the scrubbing tool 31 has a liquid impermeable structure such as a polishing tape, a through hole connected to the processing liquid nozzle 80 is formed in the scrubbing tool 31 as shown in FIG. In this case, the processing liquid nozzle 80 supplies the processing liquid to the lower surface 1 of the wafer W through the through hole of the scrubbing tool 31 . If the scrubbing tool 31 has a liquid permeable structure such as a sponge, the processing liquid nozzle 80 can supply the processing liquid to the lower surface 1 of the wafer W through the scrubbing tool 31 .

The processing liquid nozzle 80 can supply the processing liquid to the lower surface 1 of the wafer W while circularly moving together with the scrub head 50 . That is, while the scrub head 50 and the processing liquid nozzle 80 are in circular motion together, the processing liquid nozzle 80 supplies the processing liquid to the lower surface 1 of the wafer W, and the scrub head 50 moves the scrubbing tool 31 over the wafer in the presence of the processing liquid. It is brought into sliding contact with the lower surface 1 of W. According to this embodiment, the processing liquid is directly supplied to the contact point between the scrubbing tool 31 and the wafer W, so the amount of processing liquid used for processing the wafer W can be reduced. Furthermore, the amount of the processing liquid that reaches the upper surface 2 of the wafer W can be reduced.

FIG. 2 is a top view of the substrate processing apparatus. The distance from the pivot 62 to the axis CP of the substrate holder 10 is equal to the distance from the pivot 62 to the axis SC of the rotary shaft 55 . The length of the connecting member 57 is smaller than the radius of the wafer W. Further, the distance from the axis CP of the substrate holding part 10 to the axis SC of the rotating shaft 55 is shorter than the distance from the axis CP of the substrate holding part 10 to each roller 11 .

When the turning motor 65 is driven, the rotating shaft 55, the scrub head 50, the scrubbing tool 31, and the processing liquid nozzle 80 move together in parallel with the lower surface 1 (back surface) of the wafer W. As shown in FIG. More specifically, while the scrubbing tool 31 is in contact with the lower surface 1 of the wafer W, the scrub head 50, the scrubbing tool 31, and the processing liquid nozzle 80 circularly move around the axis SC of the rotating shaft 55, In addition, it moves in the radial direction of the wafer W parallel to the lower surface 1 (back surface) of the wafer W. The processing liquid nozzle 80 supplies the processing liquid to the lower surface 1 of the wafer W while circularly moving and moving in the radial direction of the wafer W. As shown in FIG. The processing liquid contacts the scrubbing tool 31, which scrubs the lower surface 1 of the wafer W in the presence of the processing liquid.

The circular motion of the scrub head 50 is independent of the swing motion (ie translation) of the support arm 60 . Since the scrub head 50 is eccentric from the axis SC of the rotating shaft 55, when the tip of the support arm 60 is positioned at the outermost position, the scrub head 50 is positioned outside the tip of the support arm 60, as can be seen from FIG. can be located in Therefore, the scrub head 50 can bring the scrub tool 31 into contact with the outermost portion of the bottom surface 1 of the wafer W. FIG. That is, by combining the circular motion of the scrub head 50 and the swing motion (parallel movement) of the support arm 60, the scrub head 50 moves the scrub tool 31 not only to the center of the bottom surface 1 of the wafer W, but also to the outermost part of the bottom surface 1 of the wafer W. can be contacted. Since the wafer W is rotated by the rollers 11 while the wafer W is being processed by the scrubbing tool 31 , the scrubbing tool 31 contacts the entire bottom surface 1 of the wafer W and can process the entire bottom surface 1 .

Since the position of the rollers 11 is fixed, the rollers 11 do not contact the scrub head 50 while the wafer W is being processed. Therefore, the scrub head 50 can process the entire bottom surface 1 of the wafer W, including the outermost portion, by bringing the scrub tool 31 into contact with the entire bottom surface 1 (back surface) of the wafer W. FIG. As a result, the outermost portion of the lower surface 1 of the wafer W does not need to be polished by an edge polishing unit, and the number of processing steps can be reduced. In addition, since the wafer W does not need to be turned over, it is possible to prevent impurities in the air from adhering to the wafer W, polishing dust and contaminants from the rear surface of the wafer W, and reduce the overall processing time. Furthermore, since a unit for edge polishing and a reversing machine for reversing the wafer W are not required, the configuration of the substrate processing system can be simplified and the cost can be reduced.

The operation of the substrate processing apparatus will be described below. A peripheral portion of the wafer W is held by the wafer holding surface 11 a of the roller 11 . The roller rotation mechanism 12 rotates the wafer W about its axis by rotating each roller 11 about its axis RC. The scrub head 50 supporting the scrub tool 31 is circularly moved around the rotary shaft 55 by the head rotation mechanism 70 . Further, the processing liquid is supplied to the processing liquid nozzle 80 through the processing liquid supply line 82 , and the processing liquid is supplied to the lower surface 1 of the wafer W from the center of the scrubber 31 .

The support arm elevating device 67 lifts the scrub head 50 and the processing liquid nozzle 80 together with the support arm 60 to bring the scrub tool 31 into contact with the lower surface 1 of the wafer W. As shown in FIG. Further, the swing motor 65 swings the support arm 60 parallel to the lower surface 1 of the wafer W. As shown in FIG. While the support arm 60 moves the scrub head 50 and the processing liquid nozzle 80 in the radial direction of the wafer W, the circularly moving scrub head 50 brings the scrub tool 31 into sliding contact with the lower surface 1 of the wafer W. FIG. As a result, the entire underside 1 of the wafer W is scrubbed by the scrubber 31 in the presence of the processing liquid.

Next, the details of the substrate holder 10 will be described. As shown in FIG. 1, the substrate holding unit 10 includes a plurality of rollers 11 described above and a roller rotation mechanism 12 that rotates these rollers 11 about their respective axes RC. In this embodiment, four rollers 11 are provided. More than five rollers 11 may be provided. The plurality of rollers 11 when in contact with the peripheral edge of the wafer W (that is, when holding the wafer W) are at the same distance from the axis CP of the substrate holder 10 .

FIG. 4 is a top view showing the roller rotation mechanism 12. FIG. The roller rotation mechanism 12 includes a first belt 14A connecting two of the four rollers 11, a first motor 15A connected to one of the two rollers 11 connected by the first belt 14A, A first roller base 16A that rotatably supports two rollers 11 connected by a first belt 14A, a second belt 14B that connects the other two of the four rollers 11, and a second belt 14B. A second motor 15B connected to one of the two connected rollers 11 and a second motor 15B rotatably supporting the two rollers 11 connected by the second belt 14B via bearings 24B (see FIG. 1). 2 roller base 16B.

As shown in FIG. 1, the first roller base 16A includes an upper first roller base 17A and a lower first roller base 17B. The first motor 15A and the first belt 14A are arranged below the first roller base 16A. The second motor 15B and the second belt 14B are arranged below the second roller base 16B. The first motor 15A is fixed to the first roller base 16A via a first motor support 25A. The second motor 15B is fixed to the lower surface of the second roller base 16B via a second motor support 25B.

5 is a cross-sectional view taken along the line AA of FIG. 4. FIG. As shown in FIG. 5, the first roller platform 16A includes a lower first roller platform 17B having bearings 24A (see FIG. 1) that rotatably support two rollers 11 connected by a first belt 14A; It has a pivot shaft 17C fixed to the lower first roller base 17B and an upper first roller base 17A having a bearing 24C that rotatably supports the pivot shaft 17C. The upper first roller base 17A and the lower first roller base 17B are connected to each other via a pivot shaft 17C. As shown in FIG. 4, the pivot shaft 17C is located between the two rollers 11 connected by the first belt 14A.

As shown in FIG. 1, the first motor 15A is fixed to the lower surface of the lower first roller base 17B via a first motor support 25A. Therefore, the first belt 14A, the two rollers 11 connected by the first belt 14A, the lower first roller base 17B, the first motor 15A, and the first motor support 25A are integrally arranged around the pivot axis 17C. Rotatable.

The roller rotation mechanism 12 is configured to rotate the four rollers 11 in the same direction at the same speed. During processing of the underside 1 of the wafer W, the peripheral edge of the wafer W is gripped by rollers 11 . The wafer W is held horizontally, and the rotation of the roller 11 causes the wafer W to rotate about its axis. During processing of the underside 1 of the wafer W, the four rollers 11 rotate about their respective axes, while the position of the rollers 11 themselves remains stationary.

Pulleys 22 are fixed to the lower portions of the four rollers 11, respectively. The first belt 14A is entrained on pulleys 22 fixed to two of the four rollers 11 and the second belt 14B is entrained on pulleys 22 fixed to the other two rollers 11 . The first motor 15A and the second motor 15B are configured to rotate at the same speed in the same direction. Therefore, the four rollers 11 can rotate in the same direction at the same speed.

As shown in FIG. 4, the roller rotation mechanism 12 includes a first actuator 18A connected to the upper first roller base 17A (see FIG. 1) of the first roller base 16A and a second roller base 16B connected to the second roller base 16B. It further has two actuators 18B. The first actuator 18A horizontally moves the two rollers 11 supported by the first roller table 16A as indicated by the arrows. Similarly, the second actuator 18B horizontally moves the other two rollers 11 supported on the second roller table 16B as indicated by the arrows. That is, the first actuator 18A and the second actuator 18B are configured to move two sets of rollers 11 (each set consists of two rollers 11 in this embodiment) in directions approaching and separating from each other. . The first actuator 18A and the second actuator 18B can be composed of air cylinders, motor driven actuators, or the like. In this embodiment, the first actuator 18A and the second actuator 18B are composed of air cylinders.

As shown in FIG. 1, the first actuator 18A and the second actuator 18B are fixed to the bottom surface of the base plate 23. As shown in FIG. Roller 11 extends upward through base plate 23 . A first linear motion guide 26A and a second linear motion guide 26B are fixed to the lower surface of the base plate 23 . A movable portion of the first direct-acting guide 26A is connected to the upper first roller base 17A, and a movable portion of the second direct-acting guide 26B is connected to the second roller base 16B. The two linear motion guides 26A, 26B limit the motion of the roller 11 to horizontal linear motion.

The wafer W is held by the four rollers 11 when the two sets of rollers 11 move toward each other. Two of the four rollers 11 are rotatable around the pivot axis 17C, so that when the four rollers 11 hold the wafer W, the positions of the two rollers 11 are automatically adjusted. . The wafer W is released from the four rollers 11 when the two sets of rollers 11 move away from each other. In this embodiment, four rollers 11 are arranged around the axis CP of the substrate holder 10, but the number of rollers 11 is not limited to four. For example, three rollers 11 may be arranged around the axis CP at equal intervals of 120 degrees, and one actuator may be provided for each roller 11 . In one embodiment, three rollers 11 are arranged around the axis CP at equal intervals of 120 degrees, two of the three rollers 11 are connected by the first belt 14A, and the first belt 14A One actuator may be provided for each of the two rollers 11 that are connected and the rollers 11 that are not connected by the first belt 14A.

As shown in FIG. 1, above the wafer W held by the substrate holder 10, a protective liquid supply nozzle 28 for supplying a protective liquid (for example, pure water) to the upper surface 2 of the wafer W is arranged. The protective liquid supply nozzle 28 is connected to a protective liquid supply source (not shown). The protective liquid supply nozzle 28 is arranged facing the center of the upper surface 2 of the wafer W. As shown in FIG. The protective liquid is supplied from the protective liquid supply nozzle 28 to the center of the upper surface 2 of the wafer W, and the protective liquid spreads over the upper surface 2 of the wafer W due to centrifugal force. The protective liquid prevents the processing liquid containing material scraps and foreign matter generated in the processing of the wafer W from reaching the upper surface 2 of the wafer W and adhering to the second surface of the wafer W. FIG. As a result, the upper surface 2 of the wafer W can be kept clean.

FIG. 6 is a schematic diagram showing another embodiment of the substrate processing apparatus, and FIG. 7 is a top view of the substrate processing apparatus shown in FIG. The configuration and operation of this embodiment, which are not specifically described, are the same as those of the embodiment described with reference to FIGS. 1 to 5, so redundant description thereof will be omitted. As shown in FIGS. 6 and 7, the substrate processing apparatus of the present embodiment has a wafer support member (substrate support member) that supports the upper surface 2 of the wafer W while the back surface of the wafer W, that is, the lower surface 1 is being processed. A roll sponge 95 is provided. The roll sponge 95 is arranged above the scrub head 50 . The roll sponge 95 is connected to a roll sponge rotating device 97 so that the roll sponge 95 is rotated about its axis by the roll sponge rotating device 97 .

The roll sponge rotating device 97 is connected to a roll sponge lifting device 98, and the roll sponge 95 and the roll sponge rotating device 97 are lifted and lowered by the roll sponge lifting mechanism 98. More specifically, when the wafer W is loaded into the substrate holder 10, the roll sponge elevating mechanism 98 lifts the roll sponge 95. As shown in FIG. When the lower surface 1 of the wafer W is processed by the scrubber 31, the roll sponge elevating mechanism 98 lowers the roll sponge 95 to contact the upper surface 2 (upper surface) of the wafer W. FIG.

While the lower surface 1 of the wafer W is being treated by the scrubbing tool 31 , the roll sponge 95 is rotated by the roll sponge rotating device 97 while supplying the protective liquid (for example, pure water) from the protective liquid supply nozzle 28 to the upper surface 2 of the wafer W. be. A roll sponge 95 cleans the top surface 2 of the wafer W in the presence of the protective liquid.

As shown in FIG. 7 , when the roll sponge 95 is viewed from above, the longitudinal direction of the roll sponge 95 is perpendicular to the straight line connecting the axis CP of the substrate holder 10 and the turning shaft 62 . Also, the axial length of the roll sponge 95 is greater than the diameter of the wafer W. As shown in FIG. The scrub head 50 and the roll sponge 95 are arranged so as to sandwich the wafer W, and the upward force applied to the wafer W from the scrub head 50 is supported by the roll sponge 95 from directly above the scrub head 50 . As a result, deflection of the wafer W during processing of the lower surface 1 of the wafer W is prevented.

FIG. 8 is a schematic diagram showing still another embodiment of the substrate processing apparatus, and FIG. 9 is a top view of the substrate processing apparatus shown in FIG. The configuration and operation of the present embodiment, which are not specifically described, are the same as those of the embodiment described with reference to FIGS. 6 and 7, so redundant description thereof will be omitted. As shown in FIGS. 8 and 9, the substrate processing apparatus of the present embodiment has a wafer supporting member (substrate supporting member) for supporting the upper surface 2 of the wafer W during processing of the lower surface 1 of the wafer W. A static pressure plate 100 is provided. A static pressure plate 100 is positioned above the scrub head 50 .

The static pressure plate 100 is configured to bring fluid into contact with the upper surface 2 of the wafer W held by the rollers 11 to support the wafer W with the fluid. A static pressure plate 100 has a substrate support surface 101 proximate to the top surface 2 of the wafer W held by rollers 11 . Further, the static pressure plate 100 includes a plurality of fluid ejection ports 104 formed in the substrate support surface 101 and fluid supply paths 102 connected to the fluid ejection ports 104 . The static pressure plate 100 is arranged above the wafer W held by the substrate holder 10, and the substrate support surface 101 is slightly separated from the upper surface 2 of the wafer W. As shown in FIG. The fluid supply path 102 is connected to a fluid supply source (not shown). The substrate support surface 101 in this embodiment is square, but may have a circular or other shape.

The static pressure plate 100 supplies a fluid (for example, a liquid such as pure water) to a plurality of fluid ejection ports 104 through a fluid supply path 102 to fill the space between the substrate supporting surface 101 and the upper surface 2 of the wafer W with the fluid. Fulfill. The wafer W is supported by a fluid present between the substrate support surface 101 and the top surface 2 of the wafer W. FIG. The substrate supporting surfaces 101 of the scrub head 50 and the static pressure plate 100 are arranged so as to sandwich the wafer W, and the upward force applied to the wafer W from the scrub head 50 is applied to the static pressure plate 100 from directly above the scrub head 50 . Supported by As a result, deflection of the wafer W during processing of the lower surface 1 of the wafer W is prevented. If pure water is used as the fluid, the protective liquid supply nozzle 28 may be omitted.

The static pressure plate 100 is connected to a static pressure plate moving mechanism 110, and the static pressure plate 100 moves between a supporting position directly above the wafer W and a retracted position higher than this supporting position by the static pressure plate moving mechanism 110. It is supposed to be moved. More specifically, when loading the wafer W into the substrate holder 10 , the static pressure plate moving mechanism 110 moves the static pressure plate 100 to the retracted position, and when the lower surface 1 of the wafer W is processed by the scrubber 31 . , the static pressure plate moving mechanism 110 moves the static pressure plate 100 to the supporting position.

FIG. 10 is a schematic diagram showing still another embodiment of the substrate processing apparatus, and FIG. 11 is a top view of the substrate processing apparatus shown in FIG. The configuration and operation of this embodiment, which are not specifically described, are the same as those of the embodiment described with reference to FIGS. 1 to 5, so redundant description thereof will be omitted. In this embodiment, the substrate holding part 10 has a first holding part 10A holding a first region R1 of the bottom surface 1 of the wafer W and a second holding part 10B holding a second region R2 of the bottom surface 1 of the wafer W. I have.

The first region R1 of the bottom surface 1 of the wafer W is a region including the center point O of the bottom surface 1 of the wafer W. As shown in FIG. The second region R<b>2 on the bottom surface 1 of the wafer W is a region located outside the first region R<b>1 and includes the outermost edge of the bottom surface 1 . The first region R1 does not include the outermost edge of the bottom surface 1, and the second region R2 does not include the center point O of the bottom surface 1. As shown in FIG. In this embodiment, the first region R1 is circular and the second region R2 is annular. The lower surface 1 of the wafer W is alternately held by the first holding portion 10A and the second holding portion 10B. The scrub head 50 , the rotating shaft 55 , and the connecting member 57 are arranged below the wafer W held by the substrate holder 10 as in the above-described embodiments.

The first holding unit 10A includes a first holding stage 111 that holds a first region R1 on the lower surface 1 of the wafer W, a stage shaft 112 connected to the first holding stage 111, and a first stage shaft 112 connected to the stage shaft 112. A stage rotating device 115 and a first stage lifting mechanism 117 for lifting and lowering the first holding stage 111 are provided. In this embodiment, the first stage rotator 115 includes at least an electric motor.

The first holding stage 111 has a circular substrate holding surface (upper surface) 111a having a diameter smaller than the diameter of the wafer W. As shown in FIG. The first holding stage 111 is connected to a first vacuum line 118 . A substrate holding surface 111 a of the first holding stage 111 is formed with a plurality of vacuum openings 111 b communicating with the first vacuum lines 118 . When a vacuum pressure is formed in the vacuum opening 111b, the first region R1 of the lower surface 1 of the wafer W is held on the substrate holding surface 111a of the first holding stage 111 by vacuum suction. Although a plurality of vacuum openings 111b are provided in this embodiment, one vacuum opening 111b may be provided. Also, the shape of the vacuum opening 111b is not particularly limited, and may be circular or groove-like, for example.

The first stage elevating mechanism 117 is connected to the first stage rotating device 115, and is arranged so that the first stage rotating device 115, the stage shaft 112, and the first holding stage 111 can be raised and lowered together. ing. The first stage elevating mechanism 117 can be composed of an air cylinder, or a combination of a servomotor and a ball screw mechanism.

The second holding section 10B includes a second holding stage 122 that holds the second region R2 of the lower surface 1 of the wafer W, and a second stage lifting mechanism 124 that lifts and lowers the second holding stage 122 . A rotating device for rotating the second holding stage 122 is not provided. The second holding stage 122 has a shape that contacts only the second region R2 of the lower surface 1 of the wafer W and does not contact the first region R1 of the lower surface 1 of the wafer W. As shown in FIG. In this embodiment, as shown in FIG. 11, the second holding stage 122 is an annular stage that can contact only the second region R2 of the lower surface 1 of the wafer W, and has an annular substrate holding surface (upper surface) 122a. have. First stage rotator 115 , stage shaft 112 , and first holding stage 111 are positioned inside annular second holding stage 122 . The rotating shaft 55 extends perpendicularly to the substrate holding surface 111a of the first holding portion 10A and the substrate holding surface 122a of the second holding portion 10B.

A second holding stage 122 is connected to a second vacuum line 126 . A plurality of vacuum openings 123 communicating with the second vacuum lines 126 are formed in the substrate holding surface 122 a of the second holding stage 122 . When a vacuum pressure is formed in the vacuum opening 123, the second region R2 of the lower surface 1 of the wafer W is held on the substrate holding surface 122a of the second holding stage 122 by vacuum suction. Although a plurality of vacuum openings 123 are provided in this embodiment, one vacuum opening 123 may be provided. Also, the shape of the vacuum opening 123 is not particularly limited, and may be circular or groove-like, for example. The second holding stage 122 is connected to a second stage lifting mechanism 124 via a holding block 128 . A holding block 128 is fixed to the second holding stage 122 and the second stage lifting mechanism 124 .

Next, the operation of the substrate processing apparatus shown in FIGS. 10 and 11 will be described. First, as shown in FIG. 10, the second stage lifting mechanism 124 lowers the second holding stage 122, and the first stage lifting mechanism 117 moves the first holding stage 111 to a position higher than the second holding stage 122. rise to The first region R1 of the lower surface 1 of the wafer W is held on the circular substrate holding surface 111a of the first holding stage 111, and the first holding stage 111 and the wafer W are rotated integrally by the first stage rotating device 115. be done. The protective liquid supply nozzle 28 supplies the protective liquid to the center of the upper surface 2 of the wafer W. As shown in FIG. The protective liquid spreads over the upper surface 2 of the wafer W due to centrifugal force.

The scrub head 50 supporting the scrub tool 31 is circularly moved around the rotary shaft 55 by the head rotation mechanism 70 . Further, the processing liquid is supplied to the processing liquid nozzle 80 through the processing liquid supply line 82 , and the processing liquid is supplied to the lower surface 1 of the wafer W from the center of the scrubber 31 . The support arm elevating device 67 lifts the scrub head 50 and the processing liquid nozzle 80 together with the support arm 60 to bring the circularly moving scrubber 31 into contact with the second region R2 of the lower surface 1 of the wafer W. FIG. A second region R2 of the lower surface 1 of the wafer W is scrubbed by a scrubber 31 in the presence of the processing liquid. The swivel motor 65 may move the scrub head 50 and the processing liquid nozzle 80 in the radial direction of the wafer W within a range where the circularly moving scrub head 50 does not contact the first holding stage 111 .

Next, the first region R1 of the bottom surface 1 of the wafer W is processed as follows. First, the swivel motor 65 swivels the support arm 60 to move the scrub head 50 to the outside of the wafer W. As shown in FIG. After that, as shown in FIG. 12, the second stage elevating mechanism 124 lifts the second holding stage 122 so that the second region R2 of the lower surface 1 of the wafer W is moved by the annular substrate holding surface 122a of the second holding stage 122. Hold. The first holding stage 111 releases the wafer W, and the first stage lifting mechanism 117 lowers the first holding stage 111 to a position lower than the second holding stage 122 and the support arm 60 . The swing motor 65 then swings the support arm 60 to move the scrub head 50 below the first region R1 of the bottom surface 1 of the wafer W. As shown in FIG. The protective liquid supply nozzle 28 supplies the protective liquid to the center of the upper surface 2 of the wafer W. As shown in FIG.

The scrub head 50 supporting the scrub tool 31 is circularly moved around the rotary shaft 55 by the head rotation mechanism 70 . Further, the processing liquid is supplied to the processing liquid nozzle 80 through the processing liquid supply line 82 , and the processing liquid is supplied to the lower surface 1 of the wafer W from the center of the scrubber 31 . The support arm elevating device 67 lifts the scrub head 50 and the processing liquid nozzle 80 together with the support arm 60 to bring the circularly moving scrubber 31 into contact with the first region R1 of the lower surface 1 of the wafer W. FIG. Further, the swing motor 65 swings the support arm 60 parallel to the lower surface 1 of the wafer W. As shown in FIG. Wafer W and second holding stage 122 do not rotate. While the swivel motor 65 moves the scrub head 50 and the processing liquid nozzle 80 in the radial direction of the wafer W within a range where the scrub head 50 does not contact the second holding stage 122 , the circularly moving scrub head 50 moves the scrub tool 31 . The lower surface 1 of the wafer W is brought into sliding contact with the first region R1. A first region R1 of the lower surface 1 of the wafer W is scrubbed by a scrubber 31 in the presence of the processing liquid.

In the above description, the second region R2 of the bottom surface 1 of the wafer W is first processed by the scrubber 31, and then the first region R1 of the bottom surface 1 of the wafer W is processed by the scrubber 31. FIG. In one embodiment, a first region R1 of the bottom surface 1 of the wafer W may be processed by the scrubber 31 first, and then a second region R2 of the bottom surface 1 of the wafer W may be processed by the scrubber 31.

FIG. 13 is a schematic diagram showing still another embodiment of the substrate processing apparatus, and FIG. 14 is a top view of the substrate processing apparatus shown in FIG. The configuration and operation of this embodiment, which are not specifically described, are the same as those of the embodiment described with reference to FIGS. 10 to 12, so redundant description thereof will be omitted.

The first holding portion 10A has the same configuration as the embodiment shown in FIGS. The second holding section 10B includes a second holding stage 122 that holds a second region R2 of the lower surface 1 of the wafer W, a stage support member 130 that supports the second holding stage 122, and a second holding stage 122 that is positioned at the center of its axis. and a second stage lifting mechanism 124 for lifting and lowering the second holding stage 122 and the stage support member 130 . The second holding stage 122 is an annular stage that can contact only the second region R2 of the lower surface 1 of the wafer W, and has an annular substrate holding surface (upper surface) 122a. First stage rotator 115 , stage shaft 112 , and first holding stage 111 are positioned inside annular second holding stage 122 .

A lower surface of the second holding stage 122 is fixed to an annular rotary joint 135 , and the rotary joint 135 is fixed to the stage support member 130 . The second holding stage 122 is rotatably supported by a rotary joint 135 . A second vacuum line 126 is connected to the rotary joint 135 . A substrate holding surface (upper surface) 122 a of the second holding stage 122 is formed with a plurality of vacuum openings 123 communicating with a second vacuum line 126 through the rotary joint 13 . When a vacuum pressure is formed in the vacuum opening 123, the second region R2 of the lower surface 1 of the wafer W is held on the substrate holding surface 122a of the second holding stage 122 by vacuum suction. Although a plurality of vacuum openings 123 are provided in this embodiment, one vacuum opening 123 may be provided. Also, the shape of the vacuum opening 123 is not particularly limited, and may be circular or groove-like, for example. Rotary joint 135 is a device capable of establishing fluid communication between second holding stage 122 and second vacuum line 126 while allowing relative rotation of second holding stage 122 with respect to second vacuum line 126 . be.

The second stage rotating device 131 includes a second stage rotating motor 137 fixed to the stage support member 130 , a pulley 140 fixed to the drive shaft 137 a of the second stage rotating motor 137 , the pulley 140 and the second holding stage 122 . A belt 141 is provided on the outer peripheral surface of the. When the second stage rotary motor 137 operates, the rotation of the drive shaft 137a of the second stage rotary motor 137 is transmitted to the second holding stage 122 through the pulley 140 and the belt 141, and the second holding stage 122 rotates around its axis. rotate to The second stage lifting mechanism 124 is connected to the stage support member 130 . The stage support member 130 , the second stage rotating device 131 , and the second holding stage 122 are integrally raised and lowered by the second stage lifting mechanism 124 .

Next, the operation of the substrate processing apparatus shown in FIGS. 13 and 14 will be described. First, as shown in FIG. 13, the second stage lifting mechanism 124 lowers the second holding stage 122, and the first stage lifting mechanism 117 moves the first holding stage 111 to a position higher than the second holding stage 122. rise to The first holding stage 111 holds the first region R1 of the lower surface 1 of the wafer W, and the first holding stage 111 and the wafer W are rotated integrally by the first stage rotating device 115 . The protective liquid supply nozzle 28 supplies the protective liquid to the center of the upper surface 2 of the wafer W. As shown in FIG. The protective liquid spreads over the upper surface 2 of the wafer W due to centrifugal force.

The scrub head 50 supporting the scrub tool 31 is circularly moved around the rotary shaft 55 by the head rotation mechanism 70 . Further, the processing liquid is supplied to the processing liquid nozzle 80 through the processing liquid supply line 82 , and the processing liquid is supplied to the lower surface 1 of the wafer W from the center of the scrubber 31 . The support arm elevating device 67 lifts the scrub head 50 and the processing liquid nozzle 80 together with the support arm 60 to bring the circularly moving scrubber 31 into contact with the second region R2 of the lower surface 1 of the wafer W. FIG. A second region R2 of the lower surface 1 of the wafer W is scrubbed by a scrubber 31 in the presence of the processing liquid. The swivel motor 65 may move the scrub head 50 and the processing liquid nozzle 80 in the radial direction of the wafer W within a range where the circularly moving scrub head 50 does not contact the first holding stage 111 .

Next, the first region R1 of the bottom surface 1 of the wafer W is processed as follows. First, the swivel motor 65 swivels the support arm 60 to move the scrub head 50 to the outside of the wafer W. As shown in FIG. After that, as shown in FIG. 15, the second stage elevating mechanism 124 lifts the second holding stage 122 to move the second region R2 of the lower surface 1 of the wafer W with the annular substrate holding surface 122a of the second holding stage 122. Hold. The first holding stage 111 releases the wafer W, and the first stage lifting mechanism 117 lowers the first holding stage 111 to a position lower than the second holding stage 122 and the support arm 60 . Next, the second stage rotating device 131 rotates the second holding stage 122 and the wafer W together. The swing motor 65 rotates the support arm 60 to move the scrub head 50 below the first region R1 on the bottom surface 1 of the wafer W. As shown in FIG. The protective liquid supply nozzle 28 supplies the protective liquid to the center of the upper surface 2 of the wafer W. As shown in FIG. The protective liquid spreads over the upper surface 2 of the wafer W due to centrifugal force.

The scrub head 50 supporting the scrub tool 31 is circularly moved around the rotary shaft 55 by the head rotation mechanism 70 . Further, the processing liquid is supplied to the processing liquid nozzle 80 through the processing liquid supply line 82 , and the processing liquid is supplied to the lower surface 1 of the wafer W from the center of the scrubber 31 . The support arm elevating device 67 lifts the scrub head 50 and the processing liquid nozzle 80 together with the support arm 60 to bring the circularly moving scrubber 31 into contact with the first region R1 of the lower surface 1 of the wafer W. FIG. Further, the swing motor 65 swings the support arm 60 parallel to the lower surface 1 of the wafer W. As shown in FIG. While the swivel motor 65 moves the scrub head 50 and the processing liquid nozzle 80 in the radial direction of the wafer W within a range where the scrub head 50 does not contact the second holding stage 122 , the circularly moving scrub head 50 moves the scrub tool 31 . The lower surface 1 of the wafer W is brought into sliding contact with the first region R1. While the wafer W is rotated about its axis, the first region R1 of the bottom surface 1 of the wafer W is scrubbed by the scrubber 31 in the presence of the processing liquid.

In the above description, the second region R2 of the bottom surface 1 of the wafer W is first processed by the scrubber 31, and then the first region R1 of the bottom surface 1 of the wafer W is processed by the scrubber 31. FIG. In one embodiment, a first region R1 of the bottom surface 1 of the wafer W may be processed by the scrubber 31 first, and then a second region R2 of the bottom surface 1 of the wafer W may be processed by the scrubber 31.

16 is a schematic diagram showing still another embodiment of the substrate processing apparatus, and FIG. 17 is a top view of the substrate processing apparatus shown in FIG. The configuration and operation of this embodiment, which are not specifically described, are the same as those of the embodiment described with reference to FIGS. 10 to 12, so redundant description thereof will be omitted.

The first holding portion 10A has the same configuration as the embodiment shown in FIGS. The second holding section 10B includes a pair of second holding stages 122A and 122B that hold the second region R2 of the lower surface 1 of the wafer W, a stage support member 130 that supports the second holding stages 122A and 122B, and a second holding section. A second stage lifting mechanism 124 for lifting and lowering the stages 122A and 122B and the stage support member 130 is provided.

The second holding stages 122A, 122B have a shape that allows contact only with the second region R2 of the lower surface 1 of the wafer W. As shown in FIG. In this embodiment, the second holding stages 122A and 122B are parallel to the substrate holding surface 111a of the first holding stage 111 and are composed of bar-shaped members that are parallel to each other. The second holding stages 122A, 122B have substrate holding surfaces 122a, 122b, respectively, which are spaced apart and at the same height. The first stage rotator 115, the stage shaft 112, and the first holding stage 111 when viewed from above are positioned between the second holding stages 122A and 122B. Therefore, the second holding stages 122A and 122B do not contact the first region R1 of the bottom surface 1 of the wafer W. FIG.

A second vacuum line 126 is connected to each of the second holding stages 122A and 122B. A plurality of vacuum openings 123 communicating with second vacuum lines 126 are formed in the substrate holding surfaces (upper surfaces) 122a and 122b of the second holding stages 122A and 122B. When a vacuum pressure is formed in the vacuum opening 123, the second region R2 of the lower surface 1 of the wafer W is held on the substrate holding surfaces 122a, 122b of the second holding stages 122A, 122B by vacuum suction.

Although a plurality of vacuum openings 123 are provided in this embodiment, one vacuum opening 123 may be provided. Also, the shape of the vacuum opening 123 is not particularly limited, and may be circular or groove-like, for example. Examples of the position of the vacuum opening 123 include the outermost edge of the lower surface 1 of the wafer W, the position between the outermost edge and the first region R1, and the like. In this embodiment, the substrate holding surfaces 122a, 122b of the second holding stages 122A, 122B hold an elongated area of the lower surface 1 of the wafer W including the outermost edge. In one embodiment, the substrate holding surfaces 122a, 122b of the second holding stages 122A, 122B may hold only the outermost edge of the bottom surface 1 of the wafer W.

Next, the operation of the substrate processing apparatus shown in FIGS. 16 and 17 will be described. First, as shown in FIG. 16, the second stage lifting mechanism 124 lowers the second holding stages 122A and 122B, and the first stage lifting mechanism 117 lowers the first holding stage 111 to the second holding stages 122A and 122B. Raise to a higher position. The first holding stage 111 holds the first region R1 of the lower surface 1 of the wafer W, and the first holding stage 111 and the wafer W are rotated integrally by the first stage rotating device 115 . The protective liquid supply nozzle 28 supplies the protective liquid to the center of the upper surface 2 of the wafer W. As shown in FIG. The protective liquid spreads over the upper surface 2 of the wafer W due to centrifugal force.

The scrub head 50 supporting the scrub tool 31 is circularly moved around the rotary shaft 55 by the head rotation mechanism 70 . Further, the processing liquid is supplied to the processing liquid nozzle 80 through the processing liquid supply line 82 , and the processing liquid is supplied to the lower surface 1 of the wafer W from the center of the scrubber 31 . The support arm elevating device 67 lifts the scrub head 50 and the processing liquid nozzle 80 together with the support arm 60 to bring the circularly moving scrubber 31 into contact with the second region R2 of the lower surface 1 of the wafer W. FIG. A second region R2 of the lower surface 1 of the wafer W is scrubbed by a scrubber 31 in the presence of the processing liquid. The swivel motor 65 may move the scrub head 50 and the processing liquid nozzle 80 in the radial direction of the wafer W within a range where the circularly moving scrub head 50 does not contact the first holding stage 111 .

Next, the first region R1 of the bottom surface 1 of the wafer W is processed as follows. First, the swivel motor 65 swivels the support arm 60 to move the scrub head 50 to the outside of the wafer W. As shown in FIG. After that, as shown in FIG. 18, the second stage elevating mechanism 124 lifts the second holding stages 122A and 122B so that the second region R2 of the lower surface 1 of the wafer W is moved to the substrate holding surface of the second holding stages 122A and 122B. It is held by 122a and 122b. The first holding stage 111 releases the wafer W, and the first stage lifting mechanism 117 lowers the first holding stage 111 to a position lower than the second holding stages 122A, 122B and the support arm 60. FIG. The swing motor 65 rotates the support arm 60 to move the scrub head 50 below the first region R1 on the bottom surface 1 of the wafer W. As shown in FIG. The protective liquid supply nozzle 28 supplies the protective liquid to the center of the upper surface 2 of the wafer W. As shown in FIG.

The scrub head 50 supporting the scrub tool 31 is circularly moved around the rotary shaft 55 by the head rotation mechanism 70 . Further, the processing liquid is supplied to the processing liquid nozzle 80 through the processing liquid supply line 82 , and the processing liquid is supplied to the lower surface 1 of the wafer W from the center of the scrubber 31 . The support arm elevating device 67 lifts the scrub head 50 and the processing liquid nozzle 80 together with the support arm 60 to bring the circularly moving scrubber 31 into contact with the first region R1 of the lower surface 1 of the wafer W. FIG. Further, the swing motor 65 swings the support arm 60 parallel to the lower surface 1 of the wafer W. As shown in FIG. While the swivel motor 65 moves the scrub head 50 and the processing liquid nozzle 80 in the radial direction of the wafer W within a range where the scrub head 50 does not contact the second holding stage 122 , the circularly moving scrub head 50 moves the scrub tool 31 . The lower surface 1 of the wafer W is brought into sliding contact with the first region R1. A first region R1 of the lower surface 1 of the wafer W is scrubbed by a scrubber 31 in the presence of the processing liquid.

In the above description, the second region R2 of the bottom surface 1 of the wafer W is first processed by the scrubber 31, and then the first region R1 of the bottom surface 1 of the wafer W is processed by the scrubber 31. FIG. In one embodiment, a first region R1 of the bottom surface 1 of the wafer W may be processed by the scrubber 31 first, and then a second region R2 of the bottom surface 1 of the wafer W may be processed by the scrubber 31.
The roll sponge 95 shown in FIGS. 6 and 7 and the static pressure plate 100 shown in FIGS. 8 and 9 may be applied to the embodiments described with reference to FIGS. 10-18.

The above-described embodiments are described for the purpose of enabling a person having ordinary knowledge in the technical field to which the present invention belongs to implement the present invention. Various modifications of the above embodiments can be made by those skilled in the art, and the technical idea of the present invention can be applied to other embodiments. Accordingly, the present invention is not limited to the described embodiments, but is to be construed in its broadest scope in accordance with the technical spirit defined by the claims.

10 Substrate holding part 10A First holding part 10B Second holding part 11 Roller 11a Substrate holding surface 12 Roller rotating mechanism 14A First belt 14B Second belt 15A First motor 15B Second motor 16A First roller stand 16B Second roller stand 17A Upper first roller base 17B Lower first roller base 17C Pivot shaft 18A First actuator 18B Second actuator 22 Pulley 23 Base plate 24A Bearing 24B Bearing 24C Bearing 25A First motor support 25B Second motor support 26A First straight Motion guide 26B Second linear motion guide 28 Protective liquid supply nozzle 31 Scrub tool 50 Scrub head 55 Rotating shaft 57 Connecting member 60 Support arm 62 Rotating shaft 65 Rotating motor 67 Support arm lifting device 70 Head rotating mechanism 71 Head rotating motor 72 Torque transmission Device 80 Treatment liquid nozzle 82 Treatment liquid supply line 90 Rotary joint 95 Roll sponge 97 Roll sponge rotating device 98 Roll sponge lifting device 100 Static pressure plate 101 Substrate support surface 102 Fluid supply path 104 Fluid injection port 110 Static pressure plate moving mechanism 111 1 holding stage 112 stage shaft 115 first stage rotating device 117 first stage lifting mechanism 118 first vacuum line 122 second holding stage 123 vacuum opening 124 second stage lifting mechanism 126 second vacuum line 128 holding block 130 stage support member 131 Second stage rotating device 135 Rotary joint 137 Second stage rotating motor 140 Pulley 141 Belt

Claims (17)

a plurality of rotatable rollers having a substrate holding surface that holds the peripheral edge of the substrate;
a scrub head that presses a scrub tool against the bottom surface of the substrate;
a rotating shaft extending parallel to the axes of the plurality of rollers;
a connecting member that connects the scrub head to the rotating shaft;
a head rotating mechanism that rotates the rotating shaft ;
a treatment liquid nozzle provided in the scrub head;
comprising a processing liquid supply line communicating with the processing liquid nozzle ;
The scrub head and the treatment liquid nozzle are eccentric from the axis of the rotating shaft ,
The substrate processing method is characterized in that the scrub head and the processing liquid nozzle are configured to integrally circularly move around the rotation axis when the scrub tool is pressed against the lower surface of the substrate. Device. 2. The substrate processing apparatus of claim 1, further comprising a substrate support member arranged above the scrub head. 3. The substrate processing apparatus of claim 2, wherein the substrate support member is a roll sponge for cleaning the upper surface of the substrate or a static pressure plate for supporting the upper surface of the substrate with fluid. The scrub head has an upper surface for supporting the scrub tool,
2. The substrate processing of claim 1 , wherein the processing liquid nozzle is disposed within the scrub head, and wherein a liquid outlet of the processing liquid nozzle is positioned within the upper surface of the scrub head. Device. a support arm that rotatably supports the rotating shaft;
5. The substrate processing apparatus according to claim 1 , further comprising a translation mechanism connected to said support arm. 6. The processing liquid supply line according to any one of claims 1 to 5, wherein the processing liquid supply line extends through the connecting member and the rotating shaft, and is connected to a processing liquid supply source via a rotary joint. The substrate processing apparatus according to . rotating the substrate by rotating the plurality of rollers around their respective axes while holding the peripheral edge of the substrate with a plurality of rollers;
While the scrub head and the processing liquid nozzle are integrally circularly moved around the rotation shaft and the support arm supporting the rotation shaft is moved in parallel with the lower surface of the substrate, the scrub tool is moved over the substrate by the scrub head. A substrate processing method comprising: pressing the substrate against the lower surface and supplying the processing liquid from the processing liquid nozzle to the lower surface of the substrate. 8. The substrate processing method according to claim 7, wherein the upper surface of the substrate is supported by a substrate supporting member while the scrubbing tool is being pressed against the lower surface of the substrate by the scrub head. a first holding stage having a substrate holding surface that holds a first region of the lower surface of the substrate;
a first stage rotating device that rotates the first holding stage;
a second holding stage having a substrate holding surface that holds a second region of the lower surface of the substrate;
a second stage rotating device that rotates the second holding stage;
a scrub head that presses a scrub tool against the bottom surface of the substrate;
a rotating shaft extending perpendicularly to the substrate holding surfaces of the first holding portion and the second holding portion;
a connecting member that connects the scrub head to the rotating shaft;
A head rotation mechanism that rotates the rotation shaft,
The first region includes a center point of the bottom surface of the substrate, the second region is located outside the first region, and
A substrate processing apparatus, wherein the scrub head is eccentric from the axis of the rotating shaft. 10. The substrate processing apparatus of claim 9 , further comprising a substrate support member arranged above the scrub head. 11. The substrate processing apparatus of claim 10 , wherein the substrate support member is a roll sponge for cleaning the upper surface of the substrate or a static pressure plate for supporting the upper surface of the substrate with fluid. a treatment liquid nozzle provided in the scrub head;
12. The substrate processing apparatus according to claim 9 , further comprising a processing liquid supply line communicating with said processing liquid nozzle. The scrub head has an upper surface for supporting the scrub tool,
13. The substrate processing of claim 12 , wherein the processing liquid nozzles are disposed within the scrub head, and liquid outlets of the processing liquid nozzles are positioned within the top surface of the scrub head. Device. a support arm that rotatably supports the rotating shaft;
14. The substrate processing apparatus according to any one of claims 9 to 13 , further comprising a translation mechanism connected to said support arm. The processing liquid nozzle is eccentric from the axis of the rotating shaft,
3. The scrub head and the processing liquid nozzle are configured to integrally circularly move about the rotation axis when the scrub tool is pressed against the lower surface of the substrate. 13. The substrate processing apparatus according to 12. 16. A substrate processing apparatus according to claim 15, wherein said processing liquid supply line extends through said connecting member and said rotating shaft, and is connected to a processing liquid supply source via a rotary joint. 17. The substrate processing apparatus according to claim 9, wherein the second area is an annular area including the outermost edge of the lower surface of the substrate.

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