TW201922413A - Substrate processing apparatus and substrate processing method capable of removing impurities by bringing a scrubbing tool into sliding contact with the back surface of the substrate - Google Patents

Abstract

The present invention provides a substrate processing apparatus capable of efficiently processing the entire back surface of the substrate including the outmost surface in a state where the back surface of the substrate faces downward. The substrate processing apparatus of the present invention includes: a plurality of rotatable rollers 11 having a substrate holding surface 11a for holding the peripheral portion of the substrate W; a scrubbing head 50 for pressing the scrubbing tool 31 on the lower surface 1 of the substrate W; a rotating shaft 55 that extends in parallel with the axis of the plurality of rollers 11; a connecting member 57 that connects the scrubbing head 50 to the rotating shaft 55; and a head rotating mechanism 70 that rotates the rotating shaft 55. The scrubbing head 50 is eccentric from the axis SC of the rotating shaft 55.

Description

Substrate processing apparatus and substrate processing method

The present invention relates to an apparatus and method for processing a surface of a substrate such as a wafer, and more particularly to a substrate processing apparatus and substrate for removing a material constituting a back surface of a substrate and foreign matter adhering to the substrate by slidingly contacting the scouring tool on the back surface of the substrate. Approach.

In recent years, components such as memory circuits, logic circuits, and image sensors (such as CMOS sensors) have become more highly integrated. In the process of forming such elements, foreign matter such as fine particles and dust is deposited on the element. Foreign matter attached to the component may cause short circuit between the wiring and poor circuit. Therefore, in order to improve the reliability of the component, it is necessary to clean the wafer on which the component is formed to remove foreign matter on the wafer.

The back side of the wafer (without the component surface) is also subjected to foreign matter such as fine particles and dust as described above. When such foreign matter adheres to the back surface of the wafer, the wafer is separated from the stage reference surface of the exposure apparatus, or the wafer surface is tilted toward the stage reference surface, resulting in variations in patterning and variations in focal length. In order to prevent such a problem, it is necessary to remove foreign matter attached to the back surface of the wafer. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP-A-2015-233091

(The problem that the invention wants to solve)

In the past, the polishing unit rotated the wafer by the substrate rotating mechanism and polished the surface of the wafer (see, for example, Patent Document 1). The substrate rotating mechanism includes a plurality of chucks that hold the peripheral edge portion of the wafer, and a ring-shaped hollow motor that rotates the wafer via the chucks. The wafer is held horizontal by the chuck face up by the chuck and rotated together with the chuck by the hollow motor centered on the axis of the wafer. The polishing head including the polishing tool is disposed on the upper side of the wafer, and is disposed inside the peripheral edge portion of the wafer held by the chuck in order to avoid contact with the rotating chuck. Thus, the outermost surface of the wafer surface is not ground, and the outermost surface of the wafer surface needs to be additionally ground with a unit for grinding the edge.

The polishing unit is provided, for example, in a substrate processing system capable of performing a series of processes of polishing, cleaning, and drying the wafer surface. In such a substrate processing system, a plurality of wafers are housed in a wafer cassette with their backside down. Therefore, when the back surface of the wafer is to be polished by the polishing unit, the wafer needs to be reversed in the process of transporting the wafer from the wafer cassette to the polishing unit. In addition, the wafer needs to be re-inverted before the polished wafer is returned to the wafer cassette. However, when the wafer is reversed in this way, impurities in the air are easily deposited on the wafer. Furthermore, since the wafer subjected to the polishing process is in a wet state, when the wafer is reversed, the polishing debris generated during the polishing process on the wafer back surface and the contaminants removed from the back surface of the wafer are returned to the desired cleanliness. Degree of wafer surface side. Further, since the step of reversing the wafer is repeated, the overall processing time is increased, and since the reversing machine for reversing the wafer is required, the configuration of the substrate processing system is complicated.

Accordingly, it is an object of the present invention to provide a substrate processing apparatus and a substrate processing method which can efficiently process the entire back surface including the outermost substrate in a state where the back surface of the substrate is downward. (the means to solve the problem)

One aspect provides a substrate processing apparatus comprising: a plurality of rotatable rolls having a substrate holding surface that holds a peripheral portion of the substrate; and a scrubbing head that presses the scrubbing tool against the underside of the substrate; the rotating shaft, And the connecting member extends in parallel with the axis of the plurality of rolls; the connecting member connects the scrubbing head to the rotating shaft; and the head rotating mechanism rotates the rotating shaft; the scrubbing head is from the rotating shaft The axis is eccentric.

In one aspect, the substrate processing apparatus further includes a substrate supporting member disposed above the scrub head. One aspect is that the substrate supporting member is a roller sponge for cleaning the upper surface of the substrate, or a static pressure plate for supporting the upper surface of the substrate. In one aspect, the substrate processing apparatus further includes: a processing liquid nozzle provided in the scrubbing head; and a processing liquid supply line connected to the processing liquid nozzle. In one aspect, the scrubbing head has a top surface for supporting the scrubbing tool, the processing liquid nozzle is disposed in the scrubbing head, and a liquid outlet of the processing liquid nozzle is located in the upper surface of the scrubbing head. In one aspect, the substrate processing apparatus further includes a support arm that rotatably supports the rotating shaft and a parallel moving mechanism that is coupled to the support arm.

One aspect provides a substrate processing method for rotating a substrate by rotating a peripheral portion of a substrate with a plurality of rolls while rotating the plurality of rolls around each axis, and rotating the scrub head A circular motion is performed around the shaft, and the support arm supporting the rotating shaft is moved in parallel with the lower surface of the substrate while the scrubbing tool is pressed against the underside of the substrate by the aforementioned scrubbing head.

In one aspect, when the scouring head is pressed against the underside of the substrate by the scouring head, the upper surface of the substrate is supported by the substrate supporting member. In one aspect, in the circular motion of the scrubbing head, the processing liquid nozzle is circularly moved around the rotating shaft together with the scrubbing head, and the processing liquid is supplied from the processing liquid nozzle to the lower surface of the substrate.

A mode provides a substrate processing apparatus comprising: a first holding portion having a substrate holding surface that holds a first region under the substrate; and a second holding portion having a substrate that holds the second region under the substrate a holding surface that presses the scrubbing tool against the lower surface of the substrate; a rotating shaft that extends perpendicularly to the substrate holding surface of the first holding portion and the second holding portion; and a connecting member that is a scrubbing head coupled to the rotating shaft; and a head rotating mechanism that rotates the rotating shaft; the first region includes a center point of the lower surface of the substrate, the second region is located outside the first region, and the scrubbing head is The axis of the aforementioned rotating shaft is eccentric.

In one aspect, the substrate processing apparatus further includes a substrate supporting member disposed above the scrub head. One aspect is that the substrate supporting member is a roller sponge for cleaning the upper surface of the substrate, or a static pressure plate for supporting the upper surface of the substrate. In one aspect, the substrate processing apparatus further includes: a processing liquid nozzle provided in the scrubbing head; and a processing liquid supply line connected to the processing liquid nozzle. In one aspect, the scrubbing head has a top surface for supporting the scrubbing tool, the processing liquid nozzle is disposed in the scrubbing head, and a liquid outlet of the processing liquid nozzle is located in the upper surface of the scrubbing head. A form further includes a support arm rotatably supporting the rotating shaft and a parallel moving mechanism coupled to the support arm. (Effect of the invention)

In the case of the present invention, since the position of the rolls is fixed, the rolls are not in contact with the scrub head during the substrate processing. Therefore, the scrubbing head allows the scrubbing tool to contact the entire underside of the substrate containing the outermost portion to process the entire underside of the substrate. Further, since it is not necessary to invert the substrate, it is possible to prevent impurities in the air from being applied to the substrate, and polishing debris and contaminants are returned from the back surface, and the overall processing time can be reduced. Furthermore, there is no need for a reversing machine that reverses the substrate. Therefore, the composition of the substrate processing system can be simplistic and the cost can be reduced.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. The first drawing shows a schematic view of an embodiment of a substrate processing apparatus. The substrate processing apparatus shown in FIG. 1 includes a wafer W that holds an example of a substrate, a substrate holding portion 10 that rotates its axis as a center, and a pressing of the cleaning tool 31 on the substrate holding portion 10 The lower surface 1 of the wafer W is used to process the scrub head 50 below the wafer W.

The substrate holding portion 10 includes a plurality of rolls 11 that are in contact with the peripheral edge portion of the wafer W, and a roll rotating mechanism 12 that rotates the rolls 11 around the respective axes SC. Each of the rolls 11 has a wafer holding surface (substrate holding surface) 11a that is in contact with the peripheral edge portion of the wafer W and holds the wafer W. At least a portion of the scrub head 50 is located below the wafer holding surface 11a. More specifically, the scrub head 50 is disposed on the lower side of the wafer W held by the substrate holding portion 10. The scrubbing tool 31 is a processing tool for removing the material constituting the lower surface 1 of the wafer W and the foreign matter attached to the wafer W. The scouring tool 31 is, for example, a polishing tape having abrasive grains, a non-woven fabric, a sponge, a polishing cloth, fixed abrasive grains, or the like.

In the present embodiment, the lower surface 1 of the wafer W is such that no element is formed, or the back surface of the wafer W on which the element is not formed is formed, that is, there is no element surface. The back surface of the wafer W is, for example, a facet. An oxide film may be formed on the back surface of the wafer W. The upper surface 2 of the wafer W is formed with an element or a surface on which the element is to be formed, that is, an element surface. The wafer W of the present embodiment is horizontally held by the substrate holding portion 10 in a state where the back surface thereof is downward.

The substrate processing apparatus further includes a rotating shaft 55 that extends in parallel with the axis SC of each of the rolls 11 and a connecting member 57 that connects the scrubbing head 50 to the rotating shaft 55. The rotating shaft 55 and the connecting member 57 are disposed on the lower side of the wafer W held by the substrate holding portion 10 . The axial center SC of each of the rolls 11 and the axial center of the rotating shaft 55 are perpendicular to the lower surface 1 of the wafer W held by the substrate holding portion 10. The scrub head 50 has an upper surface 50a for supporting the scrubbing tool 31. The connecting member 57 extends from the rotating shaft 55 to the outer side in the radial direction. One end of the connecting member 57 is fixed to the rotating shaft 55, and the scrubbing head 50 is fixed to the other end of the connecting member 57. Therefore, the center of the scrub head 50 is separated from the axis SC of the rotary shaft 55. That is, the scrub head 50 is eccentric from the axis SC of the rotating shaft 55.

The rotating shaft 55 is rotatably supported by the horizontally extending support arm 60. More specifically, the rotating shaft 55 is rotatably supported at one end of the support arm 60, and the other end of the support arm 60 is fixed to the rotary shaft 62. The rotary shaft 62 is coupled to the swing motor 65, and the swing motor 65 is coupled to the support arm lifter 67. The rotary shaft 62 extends in parallel with the axial center SC of the roll 11 and the rotary shaft 55. When the swing motor 65 rotates the rotary shaft 62 by a certain angle clockwise and counterclockwise, the support arm 60 swings around the rotary shaft 62. That is, the support arm 60 swings in a direction parallel to the lower surface 1 of the wafer W (that is, the back surface of the wafer W).

In the present embodiment, the rotary shaft 62 and the swing motor 65 constitute a parallel movement mechanism for moving the support arm 60 in parallel with the lower surface 1 of the wafer W (that is, the back surface of the wafer W). When the parallel movement mechanism moves the support arm 60, the scrub head 50 coupled to the support arm 60 performs a circular motion while moving in parallel with the lower surface 1 of the wafer W. One embodiment of the parallel movement mechanism may be a linear guide and an actuator (linear motor or ball screw mechanism, etc.) coupled to the support arm 60.

The support arm lifting and lowering device 67 is configured to integrally raise and lower the rotary shaft 62 and the support arm 60. The support arm lifting device 67 may be constituted by an air cylinder or a combination of a motor and a ball screw mechanism. As the support arm 60 ascends and descends, the rotary shaft 55, the scrub head 50, and the scrubbing tool 31 also rise and fall. When the wafer W is carried into the substrate holding portion 10, the support arm lifting and lowering device 67 lowers the rotary shaft 62, the support arm 60, the rotary shaft 55, the scrub head 50, and the scrubbing tool 31. When the underside 1 of the wafer W is processed by the scouring tool 31, the support arm lifting and lowering device 67 raises the rotary shaft 62, the support arm 60, the rotary shaft 55, the scrub head 50, and the scouring tool 31, and wipes the scouring tool 31 with the scouring head 50. Pressed on the lower surface 1 of the wafer W.

A head rotating mechanism 70 for rotating the scrub head 50 and the rotating shaft 55 is disposed in the support arm 60. The head rotating mechanism 70 includes a head rotating motor 71 and a torque transmitting device 72 for transmitting the rotation of the head rotating motor 71 to the rotating shaft 55. The configuration of the torque transmission device 72 is not particularly limited, and may be configured by, for example, a combination of a pulley and a belt. When the head rotation motor 71 is driven, the rotation shaft 55 rotates around the axis SC thereof, whereby the coupling member 57 and the scrub head 50 rotate around the rotation shaft 55. The rotation of the scrub head 50 is a circular motion of the scrub head 50 moving on a circular track centered on the axis of rotation 55. As compared with the case where the scrub head 50 is rotated about its axis, the scrub head 50 that performs the circular motion can increase the relative speed of the entire scrubbing tool 31 to the wafer W, and the processing efficiency can be improved.

A processing liquid nozzle 80 for supplying a processing liquid to the lower surface 1 of the wafer W is provided in the scrub head 50. The shape and configuration of the treatment liquid nozzle 80 are not particularly limited. The treatment liquid nozzle 80 may also be a separate member from the scrub head 50 or may be integral with the scrub head 50. For example, the treatment liquid nozzle 80 may be fixed to the scrub head 50, or the treatment liquid nozzle 80 may be formed by a hole formed in the scrub head 50. In one embodiment, when the treatment liquid nozzle 80 and the scrub head 50 are integrally moved in a circular motion, the treatment liquid nozzle 80 may be located on the outer side of the scrub head 50. For example, the treatment liquid nozzle 80 may also be located inside the radial direction of the scrub head 50. Further, a plurality of processing liquid nozzles 80 may be provided in the scrubbing head 50.

The substrate processing apparatus includes a processing liquid supply line 82 that communicates with the processing liquid nozzle 80. The front end of the treatment liquid supply line 82 is connected to the treatment liquid nozzle 80. The processing liquid supply line 82 extends inside the connecting member 57 and the rotating shaft 55, and is connected to a processing liquid supply source (not shown) via a rotary joint 90 fixed to the support arm 60. The processing liquid supplied to the processing liquid nozzle 80 is, for example, pure water, a chemical (for example, an etching liquid and a cleaning liquid), a slurry, or the like. The treatment liquid nozzle 80 faces upward and performs circular motion integrally with the scrub head 50. The liquid outlet of the treatment liquid nozzle 80 of the present embodiment is located in the upper surface 50a of the scrub head 50.

The treatment liquid such as pure water is supplied to the treatment liquid nozzle 80 through the treatment liquid supply line 82, and is discharged from the treatment liquid nozzle 80 toward the lower surface 1 of the wafer W. When the scouring tool 31 has a structure in which no liquid passes through the polishing table, as shown in the first figure, a through hole connected to the processing liquid nozzle 80 is formed in the scouring tool 31. At this time, the processing liquid nozzle 80 supplies the processing liquid to the lower surface 1 of the wafer W through the through hole of the scouring tool 31. When the scrubbing tool 31 has a structure in which a liquid such as a sponge can pass therethrough, the processing liquid nozzle 80 can supply the processing liquid to the lower surface 1 of the wafer W through the scrubbing tool 31.

The treatment liquid nozzle 80 performs a circular motion together with the scrub head 50 while supplying the treatment liquid to the lower surface 1 of the wafer W. That is, the scrub head 50 and the treatment liquid nozzle 80 integrally perform a circular motion while the treatment liquid nozzle 80 supplies the treatment liquid to the lower surface 1 of the wafer W, and the scrub head 50 slides the scrubbing tool 31 in the presence of the treatment liquid. Below the wafer W. According to this embodiment, since the processing liquid is directly supplied to the contact portion between the scrubbing tool 31 and the wafer W, the amount of the processing liquid used for processing the wafer W can be reduced. Further, the amount of the processing liquid transferred back to the upper surface 2 of the wafer W can be reduced.

The second drawing is a plan view of the substrate processing apparatus. The distance from the rotary shaft 62 to the axis CP of the substrate holding portion 10 is equal to the distance from the rotary shaft 62 to the axis SC of the rotary shaft 55. The length of the connecting member 57 is smaller than the radius of the wafer W. Further, the distance from the axis CP of the substrate holding portion 10 to the axis SC of the rotating shaft 55 is shorter than the distance from the axis CP of the substrate holding portion 10 to each of the rolls 11.

When the swing motor 65 is driven, the rotary shaft 55, the scrub head 50, the scrubbing tool 31, and the processing liquid nozzle 80 integrally move in parallel with the lower surface 1 (back surface) of the wafer W. More specifically, in a state where the scrubbing tool 31 is in contact with the lower surface 1 of the wafer W, the scrub head 50, the scrubbing tool 31, and the processing liquid nozzle 80 perform a circular motion around the axis SC of the rotating shaft 55, and The film W is moved in the radial direction of the wafer W in parallel with the lower surface 1 (back surface) of the wafer W, and the processing liquid is supplied to the lower surface 1 of the wafer W. The treatment liquid contacts the scouring tool 31, and the scouring tool 31 grinds the underside 1 of the cleaning wafer W in the presence of the treatment liquid.

The circular motion of the scrub head 50 is performed independently of the rocking motion (i.e., parallel movement) of the support arm 60. Since the scrub head 50 is eccentric from the axis SC of the rotating shaft 55, from the third figure, when the front end of the support arm 60 is located at the outermost side, the scrub head 50 can be positioned outside the front end of the support arm 60. Therefore, the scrub head 50 can bring the scrubbing tool 31 into contact with the outermost portion of the lower surface 1 of the wafer W. That is, by the combination of the circular motion of the scrub head 50 and the rocking motion (parallel movement) of the support arm 60, the scrub head 50 allows the scrubbing tool 31 to contact not only the center of the lower surface 1 of the wafer W but also the lower surface. The outermost part of 1. The wafer W is processed by the scouring tool 31. Since the wafer W is rotated by the roll 11, the scouring tool 31 is in contact with the entire lower surface 1 of the wafer W, and the entire lower surface 1 can be processed.

Since the position of the roll 11 is fixed, the roll 11 does not contact the scrub head 50 during wafer W processing. Therefore, the scrub head 50 brings the scrubbing tool 31 into contact with the entire lower surface 1 (back surface) of the wafer W including the outermost portion, and the entire lower surface 1 can be processed. As a result, it is not necessary to polish the outermost portion of the lower surface 1 of the wafer W by the unit for polishing the edge, and the number of processing steps can be reduced. Further, since it is not necessary to invert the wafer W, impurities in the air are prevented from being applied to the wafer W, and polishing dust and contaminants are returned from the back surface, and the entire processing time can be reduced. Furthermore, since it is not necessary to polish the unit for the edge and the reversing machine for inverting the wafer W, the composition of the substrate processing system can be simplified and the cost can be reduced.

Hereinafter, the operation of the substrate processing apparatus will be described. The peripheral portion of the wafer W is held by the wafer holding surface 11a of the roll 11. The roll rotating mechanism 12 rotates the respective rolls 11 around the respective axial centers RC to rotate the wafer W about its axis. The scrubbing head 50 supporting the scrubbing tool 31 performs a circular motion around the rotating shaft 55 by the head rotating mechanism 70. Further, the treatment liquid is supplied to the treatment liquid nozzle 80 through the treatment liquid supply line 82, and the treatment liquid is supplied from the center of the scouring tool 31 to the lower surface 1 of the wafer W.

The support arm lifting and lowering device 67 raises the scrubbing head 50 and the processing liquid nozzle 80 together with the support arm 60, and causes the scrubbing tool 31 to contact the lower surface 1 of the wafer W. Further, the swing motor 65 swings the support arm 60 in parallel with the lower surface 1 of the wafer W. The support arm 60 moves the scrub head 50 and the processing liquid nozzle 80 in the radial direction of the wafer W, and the scrubbing head 50 that performs circular motion causes the scrubbing tool 31 to be in sliding contact with the lower surface 1 of the wafer W. As a result, the entire lower surface 1 of the wafer W is ground and cleaned by the scouring tool 31 in the presence of the processing liquid.

Next, the substrate holding portion 10 will be described in detail. As shown in the first figure, the substrate holding portion 10 includes a plurality of the above-described plurality of rolls 11 and a roll rotating mechanism 12 that rotates the rolls 11 around the respective axes RC. In this embodiment, four rolls 11 are provided. It is also possible to provide more than five rolls 11 . The plurality of rolls 11 at the time of contacting the peripheral edge portion of the wafer W (that is, when the wafer W is held) are at the same distance from the axis CP of the substrate holding portion 10.

The fourth figure shows a top view of the roll rotating mechanism 12. The roll rotating mechanism 12 includes a first belt 14A that connects two of the four rolls 11 and a first motor 15A that is connected to one of the two rolls 11 connected to the first belt 14A. The first belt is rotatably supported. a first roll table 16A of two rolls 11 connected to 14A; a second belt 14B connecting the other two of the four rolls 11; and a second one connected to one of the two rolls 11 connected to the second belt 14B The motor 15B; and the second roll table 16B that rotatably supports the two rolls 11 to which the second belt 14B is connected via the bearing 24B (refer to the first figure).

As shown in the first figure, the first roll table 16A includes an upper first roll stand 17A and a lower first roll stand 17B. The first motor 15A and the first belt 14A are disposed below the first roll table 16A. The second motor 15B and the second belt 14B are disposed below the second roll table 16B. The first motor 15A is fixed to the first roll table 16A via the first motor support 25A. The second motor 15B is fixed to the lower surface of the second roll table 16B via the second motor support 25B.

The fifth figure is a cross-sectional view taken along line A-A of the fourth figure. As shown in FIG. 5, the first roll table 16A includes a first roll stand 17B having a bearing 24A (refer to the first drawing) rotatably supporting the two rolls 11 connected to the first belt 14A; a pivot 17C of the lower first roll stand 17B; and an upper first roll stand 17A having a bearing 24C that rotatably supports the pivot 17C. The upper first roll stand 17A and the lower first roll stand 17B are coupled to each other via a pivot 17C. As shown in the fourth figure, the pivot 17C is located between the two rolls 11 to which the first belt 14A is coupled.

As shown in the first figure, the first motor 15A is fixed to the lower surface of the lower first roll stand 17B via the first motor support 25A. Therefore, the first belt 14A, the two rolls 11 to which the first belt 14A is coupled, the lower first roll stand 17B, the first motor 15A, and the first motor support 25A are integrally rotatable about the pivot 17C.

The roll rotating mechanism 12 is configured to rotate the four rolls 11 at the same speed in the same direction. In the process of the lower surface 1 of the wafer W, the peripheral portion of the wafer W is held by the roll 11. The wafer W is horizontally held, and the wafer W is rotated about its axis by the rotation of the roll 11. In the process of the lower surface 1 of the wafer W, the four rolls 11 rotate around the respective axes, but the position of the rolls 11 itself is stationary.

A pulley 22 is fixed to each of the lower portions of the four rolls 11. The first belt 14A is hung on two pulleys 22 fixed to the four rolls 11, and the second belt 14B is hung on the pulleys 22 fixed to the other two rolls 11. The first motor 15A and the second motor 15B are configured to rotate in the same direction at the same speed. Therefore, the four rolls 11 can rotate in the same direction at the same speed.

As shown in the fourth figure, the roll rotating mechanism 12 further includes a first actuator 18A connected to the first roll stand 17A (refer to the first drawing) on the first roll table 16A, and a second roll stand 16B. The second actuator 18B. The first actuator 18A moves the two rolls 11 supported by the first roll stage 16A in the horizontal direction as indicated by the arrows. Similarly, the second actuator 18B moves the other two rolls 11 supported by the second roll stage 16B in the horizontal direction as indicated by the arrows. In other words, the first actuator 18A and the second actuator 18B are configured to move the two sets of rolls 11 (each of which is composed of two rolls 11 in the present embodiment) in the approaching and separating directions. The first actuator 18A and the second actuator 18B may be constituted by an air cylinder or a motor-driven actuator or the like. The first actuator 18A and the second actuator 18B of the present embodiment are constituted by an air cylinder.

As shown in the first figure, the first actuator 18A and the second actuator 18B are fixed to the lower surface of the substrate 23. The roll 11 extends through the substrate 23 and extends upward. A first linear guide 26A and a second linear guide 26B are fixed to the lower surface of the substrate 23. The movable portion of the first linear guide 26A is coupled to the upper first roll stand 17A, and the movable portion of the second linear guide 26B is coupled to the second roll stand 16B. The two linear guides 26A, 26B restrict the movement of the roll 11 to a linear movement in the horizontal direction.

When the two sets of rolls 11 move in the direction in which they approach each other, the wafer W is held by the four rolls 11. Since two of the four rolls 11 are rotatable around the pivot 17C, the positions of the two rolls 11 are automatically adjusted when the four rolls 11 hold the wafer W. When the two sets of rolls 11 move in the direction away from each other, the wafer W is released from the four rolls 11. In the present embodiment, four rolls 11 arranged around the axis CP of the substrate holding portion 10 are provided, but the number of the rolls 11 is not limited to four. For example, the three rolls 11 may be arranged at equal intervals around the axis CP at an angle of 120 degrees, and the actuators may be provided one by one for each of the rolls 11. In one embodiment, the three rolls 11 may be arranged at equal intervals around the axis CP at an angle of 120 degrees, and two of the three rolls 11 may be connected by the first belt 14A, and the first belt 14A may be connected to the second belt 11A. Each of the rolls 11 and the rolls 11 that are not coupled to the first belt 14A are provided with actuators one by one.

As shown in the first figure, a protective liquid supply nozzle 28 that supplies a protective liquid (for example, pure water) on the upper surface 2 of the wafer W is disposed above the wafer W held by the substrate holding portion 10. The protective liquid supply nozzle 28 is connected to a protective liquid supply source (not shown). The protective liquid supply nozzle 28 is disposed toward the center of the upper surface 2 of the wafer W. The protective liquid is supplied from the protective liquid supply nozzle 28 to the center of the upper surface 2 of the wafer W, and the protective liquid is diffused on the upper surface 2 of the wafer W by centrifugal force. The protective liquid prevents the processing liquid containing the material chips and foreign matter generated during the processing of the wafer W from being transferred back to the upper surface 2 of the wafer W, and is applied to the second surface of the wafer W. As a result, the upper surface 2 of the wafer W can be kept clean.

Fig. 6 is a schematic view showing another embodiment of the substrate processing apparatus, and Fig. 7 is a plan view showing the substrate processing apparatus shown in Fig. 6. Since the configurations and operations of the present embodiment which are not particularly described are the same as those of the embodiments described with reference to the first to fifth embodiments, the description thereof will not be repeated. As shown in the sixth and seventh embodiments, the substrate processing apparatus of the present embodiment includes a wafer supporting member (substrate supporting member) as the upper surface 2 of the supporting wafer W on the back surface of the wafer W, that is, the processing of the lower surface 1. ) Roller sponge 95. The drum sponge 95 is disposed above the scrub head 50. The drum sponge 95 is coupled to the drum sponge rotating device 97, and the drum sponge 95 is rotatable about its axis by the drum sponge rotating device 97.

The drum sponge rotating device 97 is connected to the drum sponge lifting device 98, and the drum sponge 95 and the drum sponge rotating device 97 can be raised and lowered by the drum sponge lifting device 98. More specifically, when the wafer W is carried into the substrate holding portion 10, the drum sponge lifting device 98 raises the drum sponge 95. When the underside 1 of the wafer W is processed by the scouring tool 31, the roller sponge lifting device 98 lowers the roller sponge 95 and makes it contact the upper surface 2 (upper surface) of the wafer W.

The lower surface 1 of the wafer W is processed by the scrubbing tool 31, and a protective liquid (for example, pure water) is supplied from the protective liquid supply nozzle 28 to the upper surface 2 of the wafer W, while the drum sponge 95 is rotated by the drum sponge rotating device 97. The roller sponge 95 cleans the upper surface of the wafer W in the presence of a protective liquid.

As shown in the seventh figure, when the roller sponge 95 is viewed from above, the longitudinal direction of the roller sponge 95 and the axis CP of the connection substrate holding portion 10 are perpendicular to the straight line of the rotary shaft 62. Further, the length of the roller sponge 95 in the axial direction is larger than the diameter of the wafer W. The scrubbing head 50 and the drum sponge 95 are disposed so as to sandwich the wafer W, and the upward force applied from the scrub head 50 to the wafer W is supported by the drum sponge 95 directly above the scrub head 50. As a result, the wafer W is prevented from being bent in the underlying process of the wafer W.

Fig. 8 is a schematic view showing still another embodiment of the substrate processing apparatus. The ninth drawing is a plan view of the substrate processing apparatus shown in the eighth drawing. Since the configurations and operations of the present embodiment, which are not particularly described, are the same as those described with reference to the sixth and seventh embodiments, the description thereof will not be repeated. As shown in the eighth and ninth embodiments, the substrate processing apparatus of the present embodiment includes a wafer supporting member (substrate support) that supports the upper surface 2 of the wafer W on the back surface of the wafer W, that is, in the lower surface processing. The static plate 100 of the member). The static pressure plate 100 is disposed above the scrub head 50.

The static pressure plate 100 is configured such that the fluid contacts the upper surface 2 of the wafer W held by the roll 11, and the wafer W is supported by the fluid. The static pressure plate 100 has a substrate supporting surface 101 close to the upper surface 2 of the wafer W held by the roll 11. Further, the static pressure plate 100 includes a plurality of fluid ejection ports 104 formed on the substrate supporting surface 101 and a fluid supply path 102 connected to the fluid ejection ports 104. The static pressure plate 100 is disposed above the wafer W held by the substrate holding portion 10, and the substrate supporting surface 101 is slightly separated from the upper surface 2 of the wafer W. The fluid supply path 102 is connected to a fluid supply source (not shown). The substrate supporting surface 101 of the present embodiment has a square shape, but may have a circular shape or other shapes.

The static pressure plate 100 supplies a fluid (for example, a liquid such as pure water) to the plurality of fluid ejection ports 104 through the fluid supply path 102, and fills a space between the substrate supporting surface 101 and the upper surface 2 of the wafer W with the fluid. The wafer W is supported by a fluid existing between the substrate supporting surface 101 and the upper surface 2 of the wafer W. The scrubbing head 50 and the substrate supporting surface 101 of the static pressure plate 100 are disposed so as to sandwich the wafer W, and the upward force applied from the scrubbing head 50 to the wafer W is supported by the static pressure plate 100 from directly above the scrub head 50. . As a result, the wafer W is prevented from being bent in the process of the lower surface 1 of the wafer W. When pure water is used as the fluid, the protective liquid supply nozzle 28 may be omitted.

The static pressure plate 100 is connected to the static pressure plate moving mechanism 110, and the static pressure plate 100 is movable between the support position directly above the wafer W and the retracted position higher than the support position by the static plate moving mechanism 110. More specifically, when the wafer W is carried into the substrate holding portion 10, the static plate moving mechanism 110 moves the static plate 100 to the retracted position, and when the scrubbing tool 31 processes the lower surface 1 of the wafer W, the static plate moves. The mechanism 110 moves the static pressure plate 100 to the support position.

Fig. 10 is a schematic view showing still another embodiment of the substrate processing apparatus. The eleventh drawing is a plan view of the substrate processing apparatus shown in the tenth diagram. Since the configurations and operations of the present embodiment, which are not particularly described, are the same as those described with reference to the first to fifth embodiments, the description thereof will not be repeated. The substrate holding portion 10 of the present embodiment includes a first holding portion 10A that holds the first region R1 of the lower surface 1 of the wafer W, and a second holding portion 10B that holds the second region R2 of the lower surface 1 of the wafer W.

The first region R1 of the lower surface 1 of the wafer W is a region including the center point O of the lower surface 1 of the wafer W. The second region R2 of the lower surface 1 of the wafer W is located in a region outside the first region R1 and includes a region of the outermost edge 1 below. The first region R1 does not contain the outermost edge of the lower one, and the second region R2 does not contain the center point O of the lower one. In the first embodiment, the first region R1 is circular, and the second region R2 is annular. The lower surface 1 of the wafer W is held by the first holding portion 10A and the second holding portion 10B in an interactive manner. Similarly to the above-described various embodiments, the scrub head 50, the rotating shaft 55, and the connecting member 57 are disposed on the lower side of the wafer W held by the substrate holding portion 10.

The first holding portion 10A includes a first holding stage 111 that holds the first region R1 on the lower surface 1 of the wafer W, a stage axis 112 that is coupled to the first holding stage 111, and a first one that is coupled to the stage axis 112. The stage rotating device 115; and the first stage elevating mechanism 117 for raising and lowering the first holding stage 111. The first stage rotating device 115 of the present embodiment includes at least an electric motor.

The first holding stage 111 has a circular substrate holding surface (upper surface) 111a having a diameter smaller than the diameter of the wafer W. The first holding stage 111 is coupled to the first vacuum line 118. A plurality of vacuum openings 111b communicating with the first vacuum line 118 are formed in the substrate holding surface 111a of the first holding stage 111. When the vacuum pressure is formed in the vacuum opening 111b, the first region R1 of the lower surface 1 of the wafer W is held by the substrate holding surface 111a of the first holding stage 111 by vacuum suction. In the present embodiment, a plurality of vacuum openings 111b are provided, but one vacuum opening 111b may be provided. Further, the shape of the vacuum opening 111b is not particularly limited, and may be, for example, a circular shape or a groove shape.

The first stage elevating mechanism 117 is coupled to the first stage rotating device 115, and is disposed such that the first stage rotating device 115, the stage shaft 112, and the first holding stage 111 are integrally raised and lowered. The first stage elevating mechanism 117 may be constituted by an air cylinder or a combination of a servo motor and a ball screw mechanism.

The second holding portion 10B includes a second holding stage 122 that holds the second region R2 of the lower surface 1 of the wafer W, and a second stage elevating mechanism 124 that raises and lowers the second holding stage 122. A rotating device for rotating the second holding stage 122 is not provided. The second holding stage 122 has a shape in which it contacts only the second region R2 of the lower surface 1 of the wafer W without contacting the first region R1 of the lower surface 1 of the wafer W. According to the eleventh embodiment, the second holding stage 122 is in contact with the annular stage of the second region R2 of the lower surface 1 of the wafer W, and has an annular substrate holding surface (upper surface). 122a. The first stage rotating device 115, the stage shaft 112, and the first holding stage 111 are located inside the annular second holding stage 122. The rotating shaft 55 extends perpendicularly to the substrate holding surface 111a of the first holding portion 10A and the substrate holding surface 122a of the second holding portion 10B.

The second holding stage 122 is coupled to the second vacuum line 126. A plurality of vacuum openings 123 communicating with the second vacuum line 126 are formed in the substrate holding surface 122a of the second holding stage 122. When a vacuum pressure is formed in the vacuum opening 123, the second region R2 of the lower surface 1 of the wafer W is held by the substrate holding surface 122a of the second holding stage 122 by vacuum suction. In the present embodiment, a plurality of vacuum openings 123 are provided, but one vacuum opening 123 may be provided. Further, the shape of the vacuum opening 123 is not particularly limited, and may be, for example, a circular shape or a groove shape. The second holding stage 122 is coupled to the second stage elevating mechanism 124 via the holding block 128. The holding block 128 is fixed to the second holding stage 122 and the second stage lifting mechanism 124.

Next, the operation of the substrate processing apparatus shown in the tenth and eleventh drawings will be described. First, as shown in the tenth diagram, the second stage elevating mechanism 124 lowers the second holding stage 122, and the first stage elevating mechanism 117 raises the first holding stage 111 to be higher than the second holding stage 122. position. The first region R1 of the lower surface 1 of the wafer W is held on the circular substrate holding surface 111a of the first holding stage 111, and the first holding stage 111 and the wafer W are rotated by the first stage. 115 and rotate in one. The protective liquid supply nozzle 28 supplies the protective liquid to the center of the upper surface 2 of the wafer W. The protective liquid diffuses on the upper surface 2 of the wafer W by centrifugal force.

The scrubbing head 50 supporting the scrubbing tool 31 performs a circular motion around the rotating shaft 55 by the head rotating mechanism 70. Further, the treatment liquid is supplied to the treatment liquid nozzle 80 through the treatment liquid supply line 82, and the treatment liquid is supplied from the center of the scouring tool 31 to the lower surface 1 of the wafer W. The support arm lifting and lowering device 67 raises the scrubbing head 50 and the processing liquid nozzle 80 together with the support arm 60, and causes the scrubbing tool 31 that performs the circular motion to contact the second region R2 of the lower surface 1 of the wafer W. The second region R2 of the lower surface 1 of the wafer W is ground and cleaned by the scouring tool 31 in the presence of the processing liquid. The swing motor 65 can also move the scrub head 50 and the processing liquid nozzle 80 in the radial direction of the wafer W in a range in which the scrubbing head 50 that performs the circular motion does not contact the first holding stage 111.

Next, the first region R1 of the lower surface 1 of the wafer W is processed as follows. First, the swing motor 65 rotates the support arm 60 and moves the scrub head 50 to the outside of the wafer W. Then, as shown in FIG. 12, the second stage elevating mechanism 124 raises the second holding stage 122, and holds the lower surface of the wafer W with the annular substrate holding surface 122a of the second holding stage 122. The second region R2. The first holding stage 111 releases the wafer W, and the first stage elevating mechanism 117 lowers the first holding stage 111 to a position lower than the second holding stage 122 and the support arm 60. Next, the swing motor 65 rotates the support arm 60 and moves the scrub head 50 below the first region R1 of the lower surface 1 of the wafer W. The protective liquid supply nozzle 28 supplies the protective liquid to the center of the upper surface 2 of the wafer W.

The scrubbing head 50 supporting the scrubbing tool 31 performs a circular motion around the rotating shaft 55 by the head rotating mechanism 70. Further, the treatment liquid is supplied to the treatment liquid nozzle 80 through the treatment liquid supply line 82, and the treatment liquid is supplied from the center of the scouring tool 31 to the lower surface 1 of the wafer W. The support arm lifting and lowering device 67 raises the scrubbing head 50 and the processing liquid nozzle 80 together with the support arm 60, and causes the scrubbing tool 31 that performs the circular motion to contact the first region R1 of the lower surface 1 of the wafer W. Further, the swing motor 65 swings the support arm 60 in parallel with the lower surface 1 of the wafer W. The wafer W and the second holding stage 122 do not rotate. In a range where the scrub head 50 does not contact the second holding stage 122, the swing motor 65 moves the scrub head 50 and the processing liquid nozzle 80 in the radial direction of the wafer W while performing a circular motion of the scrub head 50 to make the scrubbing tool 31 is slidably contacted with the first region R1 of the lower surface 1 of the wafer W. The first region R1 of the lower surface 1 of the wafer W is ground and cleaned by the scouring tool 31 in the presence of the processing liquid.

In the above description, the second region R2 of the lower surface 1 of the wafer W is first processed by the scouring tool 31, and then the first region R1 of the lower surface 1 of the wafer W is processed by the scouring tool 31. In one embodiment, the first region R1 of the underside of the wafer W may be processed by the scouring tool 31, and then the second region R2 of the underside of the wafer W is processed by the scouring tool 31.

Fig. 13 is a schematic view showing still another embodiment of the substrate processing apparatus. Fig. 14 is a plan view showing the substrate processing apparatus shown in Fig. 13. Since the configurations and operations of the present embodiment which are not particularly described are the same as those of the embodiments described with reference to the tenth to twelfth drawings, the description thereof will not be repeated.

The configuration of the first holding portion 10A is the same as that of the embodiment shown in the tenth to twelfth drawings. The second holding portion 10B includes: a second holding stage 122 that holds the second region R2 of the lower surface 1 of the wafer W; a stage supporting member 130 that supports the second holding stage 122; and the second holding stage 122 a second stage rotating device 131 that rotates around the axis; and a second stage elevating mechanism 124 that raises and lowers the second holding stage 122 and the stage supporting member 130. The second holding stage 122 is an annular stage that can only contact the second region R2 of the lower surface 1 of the wafer W, and has an annular substrate holding surface (upper surface) 122a. The first stage rotating device 115, the stage shaft 112, and the first holding stage 111 are located inside the annular second holding stage 122.

The lower surface of the second holding stage 122 is fixed to the annular rotary joint 135, and the rotary joint 135 is fixed to the stage support member 130. The second holding stage 122 is rotatably supported by the rotary joint 135. A second vacuum line 126 is connected to the rotary joint 135. The substrate holding surface (upper surface) 122a of the second holding stage 122 is formed with a plurality of vacuum openings 123 that communicate with the second vacuum line 126 through the rotary joint 135. When the vacuum pressure is formed in the vacuum opening 123, the second region R2 of the lower surface 1 of the wafer W is held by the substrate holding surface 122a of the second holding stage 122 by vacuum suction. In the present embodiment, a plurality of vacuum openings 123 are provided, but one vacuum opening 123 may be provided. Further, the shape of the vacuum opening 123 is not particularly limited, and may be, for example, a circular shape or a groove shape. The swivel joint 135 permits relative rotation of the second holding station 122 to the second vacuum line 126 and establishes a means for the second holding stage 122 to be in fluid communication with the second vacuum line 126.

The second stage rotating device 131 includes a second stage rotating motor 137 fixed to the stage supporting member 130, a pulley 140 fixed to the driving shaft 137a of the second stage rotating motor 137, and a pulley 140 and a second A belt 141 that holds the outer peripheral surface of the stage 122 is held. When the second stage rotation motor 137 is in operation, the rotation of the drive shaft 137a of the second stage rotation motor 137 is conducted to the second holding stage 122 through the pulley 140 and the belt 141, and the second holding stage 122 is centered on its axis And rotate. The second stage elevating mechanism 124 is coupled to the stage supporting member 130. The stage support member 130, the second stage rotating device 131, and the second holding stage 122 are integrally raised and lowered by the second stage elevating mechanism 124.

Next, the operation of the substrate processing apparatus shown in the thirteenth and fourteenth drawings will be described. First, as shown in the thirteenth diagram, the second stage elevating mechanism 124 lowers the second holding stage 122, and the first stage elevating mechanism 117 raises the first holding stage 111 to be higher than the second holding stage 122. position. The first region R1 of the lower surface 1 of the wafer W is held by the first holding stage 111, and the first holding stage 111 and the wafer W are integrally rotated by the first stage rotating device 115. The protective liquid supply nozzle 28 supplies the protective liquid to the center of the upper surface 2 of the wafer W. The protective liquid diffuses on the upper surface 2 of the wafer W by centrifugal force.

The scrubbing head 50 supporting the scrubbing tool 31 performs a circular motion around the rotating shaft 55 by the head rotating mechanism 70. Further, the treatment liquid is supplied to the treatment liquid nozzle 80 through the treatment liquid supply line 82, and the treatment liquid is supplied from the center of the scouring tool 31 to the lower surface 1 of the wafer W. The support arm lifting and lowering device 67 raises the scrubbing head 50 and the processing liquid nozzle 80 together with the support arm 60, and causes the scrubbing tool 31 that performs the circular motion to contact the second region R2 of the lower surface 1 of the wafer W. The second region R2 of the lower surface 1 of the wafer W is ground and cleaned by the scouring tool 31 in the presence of the processing liquid. The swing motor 65 can also move the scrub head 50 and the processing liquid nozzle 80 in the radial direction of the wafer W in a range in which the scrubbing head 50 that performs the circular motion does not contact the first holding stage 111.

Next, the first region R1 of the lower surface 1 of the wafer W is processed as follows. First, the swing motor 65 rotates the support arm 60 and moves the scrub head 50 to the outside of the wafer W. Then, as shown in the fifteenth diagram, the second stage elevating mechanism 124 raises the second holding stage 122, and holds the lower surface of the wafer W with the annular substrate holding surface 122a of the second holding stage 122. The second region R2. The first holding stage 111 releases the wafer W, and the first stage elevating mechanism 117 lowers the first holding stage 111 to a position lower than the second holding stage 122 and the support arm 60. Next, the second stage rotating device 131 integrally rotates the second holding stage 122 and the wafer W. The swing motor 65 rotates the support arm 60 and moves the scrub head 50 below the first region R1 of the lower surface 1 of the wafer W. The protective liquid supply nozzle 28 supplies the protective liquid to the center of the upper surface 2 of the wafer W. The protective liquid diffuses on the upper surface 2 of the wafer W by centrifugal force.

The scrubbing head 50 supporting the scrubbing tool 31 performs a circular motion around the rotating shaft 55 by the head rotating mechanism 70. Further, the treatment liquid is supplied to the treatment liquid nozzle 80 through the treatment liquid supply line 82, and the treatment liquid is supplied from the center of the scouring tool 31 to the lower surface 1 of the wafer W. The support arm lifting and lowering device 67 raises the scrubbing head 50 and the processing liquid nozzle 80 together with the support arm 60, and causes the scrubbing tool 31 that performs the circular motion to contact the first region R1 of the lower surface 1 of the wafer W. Further, the swing motor 65 swings the support arm 60 in parallel with the lower surface 1 of the wafer W. In a range where the scrub head 50 does not contact the second holding stage 122, the swing motor 65 moves the scrub head 50 and the processing liquid nozzle 80 in the radial direction of the wafer W while performing a circular motion of the scrub head 50 to make the scrubbing tool 31 is slidably contacted with the first region R1 of the lower surface 1 of the wafer W. The first region R1 of the lower surface 1 of the wafer W is ground and cleaned by the scouring tool 31 in the presence of the processing liquid.

In the above description, the second region R2 of the lower surface 1 of the wafer W is first processed by the scouring tool 31, and then the first region R1 of the lower surface 1 of the wafer W is processed by the scouring tool 31. In one embodiment, the first region R1 of the underside of the wafer W may be processed by the scouring tool 31, and then the second region R2 of the underside of the wafer W is processed by the scouring tool 31.

Fig. 16 is a schematic view showing still another embodiment of the substrate processing apparatus. Fig. 17 is a plan view showing the substrate processing apparatus shown in Fig. 16. Since the configurations and operations of the present embodiment which are not particularly described are the same as those of the embodiments described with reference to the tenth to twelfth drawings, the description thereof will not be repeated.

The configuration of the first holding portion 10A is the same as that of the embodiment shown in the tenth to twelfth drawings. The second holding portion 10B includes: one pair of the second holding stages 122A and 122B holding the second region R2 of the lower surface 1 of the wafer W; and the stage supporting member 130 supporting the second holding stages 122A and 122B; The second holding stage 122A, 122B and the stage supporting member 130 are raised and lowered by the second stage elevating mechanism 124.

The second holding stages 122A, 122B have a shape that can only contact the second region R2 of the lower surface 1 of the wafer W. The second holding stages 122A and 122B of the present embodiment are constituted by rod-shaped members which are parallel to the substrate holding surface 111a of the first holding stage 111 and which are parallel to each other. The second holding stages 122A, 122B are separated from each other and have substrate holding faces 122a, 122b at the same height, respectively. The first stage rotating device 115, the stage shaft 112, and the first holding stage 111 are located between the second holding stages 122A, 122B when viewed from above. Therefore, the second holding stages 122A, 122B do not contact the first region R1 of the lower surface 1 of the wafer W.

The second holding stages 122A, 122B are respectively connected to the second vacuum line 126. The substrate holding faces (upper faces) 122a, 122b of the second holding stages 122A, 122B are formed with a plurality of vacuum openings 123 communicating with the second vacuum line 126. When the vacuum pressure is formed in the vacuum opening 123, the second region R2 of the lower surface 1 of the wafer W is held by the substrate holding surfaces 122a and 122b of the second holding stages 122A and 122B by vacuum suction.

In the present embodiment, a plurality of vacuum openings 123 are provided, but one vacuum opening 123 may be provided. Further, the shape of the vacuum opening 123 is not particularly limited, and may be, for example, a circular shape or a groove shape. An example of the position of the vacuum opening 123 is the outermost edge of the lower surface 1 of the wafer W, the position between the outermost edge and the first region R1, and the like. The substrate holding surfaces 122a and 122b of the second holding stages 122A and 122B of the present embodiment hold an elongated region including the outermost edge of the lower surface 1 of the wafer W. In one embodiment, the substrate holding surfaces 122a and 122b of the second holding stages 122A and 122B may hold only the outermost edge of the lower surface 1 of the wafer W.

Next, the operation of the substrate processing apparatus shown in Figs. 16 and 17 will be described. First, as shown in the sixteenth diagram, the second stage elevating mechanism 124 lowers the second holding stages 122A, 122B, and the first stage elevating mechanism 117 raises the first holding stage 111 to be higher than the second holding stage. 122A, 122B high position. The first region R1 of the lower surface 1 of the wafer W is held by the first holding stage 111, and the first holding stage 111 and the wafer W are integrally rotated by the first stage rotating device 115. The protective liquid supply nozzle 28 supplies the protective liquid to the center of the upper surface 2 of the wafer W. The protective liquid diffuses on the upper surface 2 of the wafer W by centrifugal force.

The scrubbing head 50 supporting the scrubbing tool 31 performs a circular motion around the rotating shaft 55 by the head rotating mechanism 70. Further, the treatment liquid is supplied to the treatment liquid nozzle 80 through the treatment liquid supply line 82, and the treatment liquid is supplied from the center of the scouring tool 31 to the lower surface 1 of the wafer W. The support arm lifting and lowering device 67 raises the scrubbing head 50 and the processing liquid nozzle 80 together with the support arm 60, and causes the scrubbing tool 31 that performs the circular motion to contact the second region R2 of the lower surface 1 of the wafer W. The second region R2 of the lower surface 1 of the wafer W is ground and cleaned by the scouring tool 31 in the presence of the processing liquid. The swing motor 65 can also move the scrub head 50 and the processing liquid nozzle 80 in the radial direction of the wafer W in a range in which the scrubbing head 50 that performs the circular motion does not contact the first holding stage 111.

Next, the first region R1 of the lower surface 1 of the wafer W is processed as follows. First, the swing motor 65 rotates the support arm 60 and moves the scrub head 50 to the outside of the wafer W. Then, as shown in FIG. 18, the second stage elevating mechanism 124 raises the second holding stages 122A, 122B and holds the wafer W with the substrate holding faces 122a, 122b of the second holding stages 122A, 122B. The second region R2 of the following 1. The first holding stage 111 releases the wafer W, and the first stage elevating mechanism 117 lowers the first holding stage 111 to a position lower than the second holding stages 122A, 122B and the support arm 60. The swing motor 65 rotates the support arm 60 and moves the scrub head 50 below the first region R1 of the lower surface 1 of the wafer W. The protective liquid supply nozzle 28 supplies the protective liquid to the center of the upper surface 2 of the wafer W.

The scrubbing head 50 supporting the scrubbing tool 31 performs a circular motion around the rotating shaft 55 by the head rotating mechanism 70. Further, the treatment liquid is supplied to the treatment liquid nozzle 80 through the treatment liquid supply line 82, and the treatment liquid is supplied from the center of the scouring tool 31 to the lower surface 1 of the wafer W. The support arm lifting and lowering device 67 raises the scrubbing head 50 and the processing liquid nozzle 80 together with the support arm 60, and causes the scrubbing tool 31 that performs the circular motion to contact the first region R1 of the lower surface 1 of the wafer W. Further, the swing motor 65 swings the support arm 60 in parallel with the lower surface 1 of the wafer W. In a range where the scrub head 50 does not contact the second holding stage 122, the swing motor 65 moves the scrub head 50 and the processing liquid nozzle 80 in the radial direction of the wafer W while performing a circular motion of the scrub head 50 to make the scrubbing tool 31 is slidably contacted with the first region R1 of the lower surface 1 of the wafer W. The first region R1 of the lower surface 1 of the wafer W is ground and cleaned by the scouring tool 31 in the presence of the processing liquid.

In the above description, the second region R2 of the lower surface 1 of the wafer W is first processed by the scouring tool 31, and then the first region R1 of the lower surface 1 of the wafer W is processed by the scouring tool 31. In one embodiment, the first region R1 of the underside of the wafer W may be processed by the scouring tool 31, and then the second region R2 of the underside of the wafer W is processed by the scouring tool 31. The roller sponge 95 shown in the sixth and seventh figures, and the static pressure plate 100 shown in the eighth and ninth drawings can also be applied to the embodiments described with reference to the tenth to eighteenth drawings.

The above embodiments are described for the purpose of carrying out the invention by those having ordinary skill in the art to which the invention pertains. Those skilled in the art can of course form various modifications of the above-described embodiments, and the technical idea of the present invention can also be applied to other embodiments. Therefore, the present invention is not limited to the embodiments described, but is the most widely explained in accordance with the technical idea defined by the scope of the claims.

10‧‧‧Substrate retention department

10A‧‧‧First Maintenance Department

10B‧‧‧Second Holding Department

11‧‧‧ Rolls

11a‧‧‧ wafer holding surface

12‧‧‧Roll rotation mechanism

14A‧‧‧First belt

14B‧‧‧Second belt

15A‧‧‧First motor

15B‧‧‧second motor

16A‧‧‧First roll table

16B‧‧‧Second roll table

17A‧‧‧Upper first roll table

17B‧‧‧Lower first roll table

17C‧‧‧ pivot

18A‧‧‧First Actuator

18B‧‧‧Second actuator

22‧‧‧ pulley

23‧‧‧Substrate

24A‧‧‧ bearing

24B‧‧‧ bearing

24C‧‧‧ bearing

25A‧‧‧First motor support

25B‧‧‧Second motor support

26A‧‧‧First linear guide

26B‧‧‧Second linear guide

28‧‧‧Protective liquid supply nozzle

31‧‧‧ scrubbing tools

50‧‧‧Scrubbing head

50a‧‧‧above

55‧‧‧Rotary axis

57‧‧‧Connected components

60‧‧‧Support arm

62‧‧‧Rotary axis

65‧‧‧Slewing motor

67‧‧‧Support arm lifting device

70‧‧‧ head rotating mechanism

71‧‧‧ head rotating motor

72‧‧‧Torque conduction device

80‧‧‧Processing liquid nozzle

82‧‧‧Processing liquid supply line

90‧‧‧Rotary joint

95‧‧‧Roller sponge

97‧‧‧Roller sponge rotating device

98‧‧‧Roller sponge lifting device

100‧‧‧ static pressure plate

101‧‧‧Substrate support surface

102‧‧‧ Fluid supply path

104‧‧‧ fluid injection port

110‧‧‧Static plate moving mechanism

111‧‧‧First holding stage

111a‧‧‧ substrate holding surface

111b‧‧‧vacuum opening

112‧‧‧Axis shaft

115‧‧‧First stage rotating device

117‧‧‧First stage lifting mechanism

118‧‧‧First vacuum line

122‧‧‧Second holding stage

122A, 122B‧‧‧Second holding stage

122a, 122b‧‧‧ substrate holding surface

123‧‧‧vacuum opening

124‧‧‧Second stage lifting mechanism

126‧‧‧Second vacuum line

128‧‧‧ Keeping the box

130‧‧‧Tile support members

131‧‧‧Second stage rotating device

135‧‧‧Rotary joint

137‧‧‧Second stage rotary motor

137a‧‧‧ drive shaft

140‧‧‧ pulley

141‧‧‧Land

W‧‧‧ wafer

1‧‧‧ below

2‧‧‧above

CP, RC, SC‧‧‧ axis

O‧‧‧ Center Point

R1‧‧‧ first area

R2‧‧‧ second area

The first drawing shows a schematic view of an embodiment of a substrate processing apparatus. The second drawing is a plan view of the substrate processing apparatus. The third figure shows a top view of the state in which the support arm is located at the outermost side. The fourth figure shows a top view of the roll rotating mechanism. The fifth figure is a cross-sectional view taken along line A-A of the fourth figure. Fig. 6 is a schematic view showing another embodiment of the substrate processing apparatus. The seventh drawing is a plan view of the substrate processing apparatus shown in the sixth drawing. Fig. 8 is a schematic view showing still another embodiment of the substrate processing apparatus. The ninth drawing is a plan view of the substrate processing apparatus shown in the eighth drawing. Fig. 10 is a schematic view showing still another embodiment of the substrate processing apparatus. The eleventh drawing is a plan view of the substrate processing apparatus shown in the tenth diagram. The twelfth figure shows a state in which the first holding stage is lowered and the second holding stage is raised. Fig. 13 is a schematic view showing still another embodiment of the substrate processing apparatus. Fig. 14 is a plan view showing the substrate processing apparatus shown in Fig. 13. The fifteenth figure shows a state in which the first holding stage is lowered and the second holding stage is raised. Fig. 16 is a schematic view showing still another embodiment of the substrate processing apparatus. Fig. 17 is a plan view showing the substrate processing apparatus shown in Fig. 16. The eighteenth figure shows a state in which the first holding stage is lowered and the second holding stage is raised.

Claims (15)

A substrate processing apparatus comprising: a plurality of rotatable rolls having a substrate holding surface for holding a peripheral portion of a substrate; and a scrubbing head for pressing a scrubbing tool against a lower surface of the substrate; and a rotating shaft The axis of the plurality of rolls extends in parallel; the connecting member connects the scrubbing head to the rotating shaft; and the head rotating mechanism rotates the rotating shaft; the scrubbing head is from the axis of the rotating shaft eccentric. The substrate processing apparatus according to claim 1, further comprising a substrate supporting member disposed above the scrubbing head. The substrate processing apparatus of claim 2, wherein the substrate supporting member is a roller sponge for cleaning the upper surface of the substrate, or a static pressure plate for supporting the upper surface of the substrate. The substrate processing apparatus according to claim 1, further comprising: a processing liquid nozzle provided in the scrubbing head; and a processing liquid supply line connected to the processing liquid nozzle. The substrate processing apparatus of claim 4, wherein the scouring head has a top surface for supporting the scouring tool, the processing liquid nozzle is disposed in the scouring head, and the liquid outlet of the processing liquid nozzle is located in the scouring head Above. The substrate processing apparatus according to any one of claims 1 to 5, further comprising: a support arm that rotatably supports the rotating shaft and a parallel moving mechanism that is coupled to the support arm. A substrate processing method characterized in that the substrate is rotated by a plurality of rolls while holding a peripheral portion of the substrate while rotating the plurality of rolls around the respective axes, and the scrubbing head is rounded around the rotating shaft The movement is performed, and the support arm supporting the rotating shaft is moved in parallel with the lower surface of the substrate, and the scrubbing tool is pressed against the underside of the substrate by the scrubbing head. The substrate processing method according to claim 7, wherein the upper surface of the substrate is supported by the substrate supporting member when the scouring head is pressed against the underside of the substrate by the scouring head. The substrate processing method of claim 7 or 8, wherein in the circular motion of the scrubbing head, the processing liquid nozzle is circularly moved around the rotating shaft together with the scrubbing head, and the processing is performed from the foregoing The liquid nozzle supplies the treatment liquid to the underside of the substrate. A substrate processing apparatus comprising: a first holding portion having a substrate holding surface that holds a first region under the substrate; and a second holding portion having a substrate holding surface that holds a second region under the substrate; a scrubbing head for pressing a scrubbing tool against a lower surface of the substrate; a rotating shaft extending perpendicularly to the substrate holding surface of the first holding portion and the second holding portion; and a connecting member connecting the scrubbing head The rotating shaft; and a head rotating mechanism for rotating the rotating shaft; the first region includes a center point of the lower surface of the substrate, the second region is located outside the first region, and the scrubbing head is from the rotating shaft The axis is eccentric. The substrate processing apparatus according to claim 10, further comprising a substrate supporting member disposed above the wiping head. The substrate processing apparatus of claim 11, wherein the substrate supporting member is a roller sponge for cleaning the upper surface of the substrate, or a static pressure plate for supporting the upper surface of the substrate. The substrate processing apparatus according to claim 10, further comprising: a processing liquid nozzle provided in the scrubbing head; and a processing liquid supply line connected to the processing liquid nozzle. The substrate processing apparatus of claim 13, wherein the scouring head has a top surface for supporting the scouring tool, the processing liquid nozzle is disposed in the scouring head, and the liquid outlet of the processing liquid nozzle is located in the scouring head Above. The substrate processing apparatus according to any one of claims 10 to 14, further comprising: a support arm that rotatably supports the rotating shaft and a parallel moving mechanism that is coupled to the support arm.