TW201246301A - A method and apparatus for forming a thin lamina - Google Patents

Abstract

A method for producing a lamina from a donor body includes implanting the donor body with an ion dosage and heating the donor body to an implant temperature during implanting. The donor body is separably contacted with a susceptor assembly, where the donor body and the susceptor assembly are in direct contact. A lamina is exfoliated from the donor body by applying a thermal profile to the donor body. Implantation and exfoliation conditions may be adjusted in order to maximize the defect-free area of the lamina.

Description

201246301 VI. Description of the invention: [^^明 belongs to Ge^Technical field] Related Applications This application is filed on December 20, 2010 by Murali et al. and is filed on US Patent Application No. 12/ No. 980,424, entitled "A Method to Form a Device by Constructing a Support Element on a Thin Semiconductor Lamina", which is hereby incorporated by reference herein. The application claims the priority of the following application: US Provisional Patent Application No. 61/510,477, filed July 21, 2011, entitled "Detection Methods in Exfoliation of Lamina"; United States, filed on July 21, 2011 Provisional Patent Application No. 61/510,476, entitled "Support Apparatus and Methods For Production of Silicon Lamina"; U.S. Provisional Patent Application Serial No. 61/510,478, filed on July 21, 2011, entitled "Ion Implantation and Exfoliation And "U.S. Provisional Patent Application No. 61/510,475, filed July 21, 2011, entitled "Apparatus and Methods f r Production of Silicon Lamina"; the disclosures of these applications are hereby incorporated by reference herein in its entirety in its entirety in the the the the the the the the the the the the The element contains a P_n diode; Figure 1 shows a real yoke example of 201246301. The depletion region is formed at the Pn junction to generate an electric field. The incident photon (incident light is indicated by an arrow) will drive the electron from the valence band. To the conduction band, a free electron-hole pair is generated. In the electric field of the p_n junction, electrons tend to migrate toward the "type region" of the diode, and the hole migrates to the p-type region, resulting in the so-called The current of the photocurrent. Typically, the dopant concentration of one region will be higher than the concentration of other regions such that the junction is a p+/n- junction (as shown in Figure 1) or an n+/p_ junction. The lightly doped region is referred to as the base of the photovoltaic cell, and the region that is more heavily doped to the opposite conductivity is referred to as the emitter. Most of the carriers are generated in the base of the thickest portion of the cell. The base and emitter together form the active area of the cell. Ion implantation is a conventional method for forming a cleave plane in a semiconductor material to form a layer body for use in a photovoltaic cell. The ion implantation and exfoliation steps of these methods have a significant effect on the quality of the layer being formed. It is preferred to improve the method and apparatus for producing a layer. [Inventive L] Summary of the Invention A method for forming a layer body from a donor body includes implanting the donor body with an ion dose and heating the donor body to an implantation temperature during implantation. The application system is in discrete contact with a susceptor assembly, wherein the donor body is in direct contact with the crystal holder assembly. A layer of the body is delaminated from the donor by applying a heat distribution to the donor. Implantation and delamination conditions can be adjusted to maximize the defect free area of the layer. BRIEF DESCRIPTION OF THE DRAWINGS 201246301 Each of the inventive aspects and specific embodiments described herein may be used alone or in combination with one another. These aspects and specific embodiments will now be described with reference to the drawings. Figure 1 is a cross-sectional view of a prior art photovoltaic cell. A cross-sectional view of Figures 2A through 2D illustrates the stage of formation of a photovoltaic device of U.S. Patent Application Serial No. 12/026,530 (Sivaram et al.). The flowchart of Figure 3 illustrates the steps of an exemplary method in accordance with aspects of the present invention. Cross-sectional views of Figures 4A and 4B illustrate stages of formation of a layer body in accordance with a particular embodiment of the present invention. Cross-sectional views of Figures 5A and 5B illustrate the separation of the layers in accordance with a particular embodiment of the present invention. Cross-sectional views of Figures 6A and 6B illustrate the separation of the layers in accordance with a particular embodiment of the present invention. The cross-sectional views of Figures 7A and 7C illustrate the stages of formation of a photovoltaic device that constitutes a metal support member. 8A and 8B are cross-sectional perspective and top perspective views of an exemplary crystal seat assembly of the present invention. The top views of Figs. 9A and 9B illustrate a specific embodiment of the crystal panel of the present invention. The perspective cross-sectional views of Figures 10A and 10B illustrate a separation chuck of one embodiment of the present invention. C. Embodiment 3 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT 201246301 Several methods and apparatus are described in which a self-standing layer separated from a donor body is formed without an adhesive or permanent bonding to a support member. The method and apparatus of the present invention comprise implanting a first surface of a donor with an ion dose and heating the donor to an implantation temperature during implantation. The first surface of the donor body is in detachable contact with the first surface of the crystal holder assembly, and the layer is debonded from the donor body by applying a heat distribution to the donor body. The layer can then be separated from the donor. In some embodiments, the separating method comprises: applying a forming force to the surface of the layer or donor. Implantation and delamination conditions can be tailored to the material of the donor to maximize the defect free area of the free standing sheet. A conventional photovoltaic cell formed of a silicon body includes a p-n diode, and as shown in Fig. 1, a depletion region is formed on the p-n junction. The donor body used to form the photovoltaic cells is typically about 200 to 250 microns thick. The thinner layer formed by the bismuth donor can be formed by epitaxial growth, adhesion of the layer to the support member permanently or by other means of creating a bond layer before splitting or borrowing from the donor. Photovoltaic cells. The layer body typically formed in this manner must either bond the support element to any resulting photovoltaic cells or participate in a debonding step to remove the support elements. The method and apparatus of the present invention are described as being capable of forming a self-standing sheet and being separated from the donor without adhesive or permanent bonding to the support member and without the need for a stripping or cleaning step prior to fabrication of the photovoltaic cell. In the present invention, the donor body is implanted through the first surface to form a split plane. The first surface of the donor body can then be placed adjacent the support member. A heating step is performed to delaminate the layer from the first surface of the donor to create a second surface. This method is performed without a bond support element 201246301 on the layer. Ion implantation and delamination conditions can significantly affect the quality of the layers produced by this method and can be optimized to reduce the number of physical defects that may form in the free-standing layer. A separation method for a delaminated free-standing thin layer body is also described.

U.S. Patent Application Serial No. 12/026,530, entitled "Method to Form a Photovoltaic Cell", filed on Jan. 28, 2008, which is hereby incorporated by reference.

Comprising a Thin Lamina" 'Describes the fabrication of photovoltaic cells comprising a semiconductor thin layer formed from undeposited semiconductor material. Please refer to Figure 2 of the specific embodiment of Sivaram et al., using one or more gases An ion (eg, 'hydrogen and/or helium ion') is implanted into the semiconductor donor body 20 through the first surface. The implanted ions define a split plane 3〇 in the semiconductor body. As shown in FIG. 2B, the donor body 20 The first surface is fixed to the receiver 6〇. Referring to Figure 2C, the tempering step causes the layer 4〇 and the donor 2〇 to split at the split plane 30 to produce the second surface 62. In Sivaram et al. In a human embodiment, the photovoltaic cells comprising the semiconductor layer 40 are formed with additional steps before and after the splitting step, the semiconductor layer 40 having a thickness of about 0.2 to about 1 Å and a thickness of, for example, about 0.2 to about 50 microns. , for example, from about 1 to about 2 microns thick, in some embodiments 'about 1 to about 10 microns thick or about 4 to about 20 or about 5 to about 15 microns thick', however, any of the specified ranges Thickness is possible. Figure 21) shows the structure that is reversed, The intermediate acceptor 6 〇 is at the bottom, as during the operation of some embodiments. The acceptor 60 can be a discrete acceptor element having a maximum width greater than the maximum width of the donor 1 不 and no more than 50 percent, and the width is approximately the same </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> <RTIgt; a Discrete Receiver Element, the disclosure of which is incorporated herein by reference. In the alternative, a plurality of donors can be affixed to a single larger receptor, and the layers are split with the individual donors. Using the method of Sivaram et al., Photovoltaics The cell is formed by a thin semiconductor layer, rather than a diced wafer, without wasting kerf loss or making unnecessary thick cells, thereby reducing cost. Reuse the same The wafer is applied to form a plurality of layers, which can further reduce the cost' and after delamination of the plurality of layers, can be resold for some other use. In the present invention, The formation of the layer is formed by ion implantation of the semiconductor donor to define the split plane and to delaminate the semiconductor layer from the donor at the split plane. The layer has an unbonded first surface and an opposite unbonded surface a second surface. After the delamination step, the layer is separated from the donor and fabricated into a photovoltaic cell 'where the layer comprises a base region of the photovoltaic cell. The thickness of the body can range from about 4 microns to about Between 20 microns. One, two or more layers may be formed on the first surface of the layer before the layer is added to the photovoltaic cell. One, two or more layers may be formed on the second surface of the free standing layer. The thickness of the layer depends on the depth of the split plane. In many embodiments, the thickness of the layer is between about 1 and about 10 microns, such as between about 2 and about 5 microns, such as about 4.5 microns. In other embodiments, the thickness of the layer body is between about 4 and about 20 microns, such as between about 1 inch and about 15 microns, such as about 11 microns. The second surface is produced by a splitting process. Although the process may be different, the layer is not permanently or adhesively attached to the support element to provide the layer 201246301. In most embodiments, it has been delaminated and separated from larger donors (e.g., crystal or boule). Turning to Figure 3, which outlines the method of the present invention, ions are first implanted through the first surface to form a split plane (step 1 of Figure 3). Implant conditions can be adjusted to reduce physical defects in the appearance of the final formed layer, such as tears, cracks, rips, wavefront defects, radial stnations, flaking, or Any combination of them). In a specific embodiment, the physical defects include cracks, and the method of the present invention provides a free standing layer in which the total length of the crack is less than 100 mm. Physical defects include any defects that may result in shunting or reduce the performance of the completed cell. An area containing physical defects in the layer may be equivalent to an area in the photovoltaic cell that is rendered unusable. Implantation conditions that can be adjusted to maximize substantial defect-free regions in the layer after splitting include temperature and/or force applied to the donor during implantation. In some specific embodiments, the implantation temperature can be maintained at Between, for example, 100 to 2 inches. (: between or between 12 〇 and 18 〇. (: Between. Aspects of the invention are that the implantation temperature can be adjusted based on the orientation of the material and the donor body. In some embodiments, the material is {Π1} The implant temperature may be between 150 and 2 GGt. In other embodiments, the material is calibrated and the implant temperature may be between 25 and 15 。. The method described herein may also be applied. There are semiconductor donors of any orientation, such as { directional directional Shi Xi, or _}. The implantation temperature can be optimized for any orientation and implantation energy. Other adjustable implant conditions can include initial process parameters, such as The ratio of the dose to the implanted ion_for example, hydrogen: ( (4). In some embodiments, 'implantation conditions and delamination conditions can be optimized, such as delamination temperature' off 201246301 layer wafer seat vacuum degree, heating rate And/or delamination pressure to maximize the area of the layer that is substantially free of physical defects. In some embodiments, the layer formed by the method of the present invention has a surface area of more than 9 % without physical defects. After forming a split plane, it can be applied Contact with a temporary support element (eg, a crystal holder assembly) (Fig. 3 'Step 2) for further processing. The donor, layer or photovoltaic cell is typically available at various stages of manufacture with an adhesive or via chemical bonding. Fixed to a temporary carrier. If an adhesive is used, additional steps are required to initiate stripping of the layer and/or to clean the surface of the photovoltaic cell and the temporary carrier after detachment. Alternatively, the support element may be dissolved or It is otherwise removed and rendered unusable for other support steps. In one aspect of the invention, the donor and support elements (eg, a crystal seat assembly) are used without an adhesive or permanent bonding. Separably contacting to stabilize the layer during delamination. The contact may be direct contact between the donor and the support member and may not contain an adherent or require chemical or physical steps to merely apply the donor or layer A bonding step of disintegrating the contact after the crystal holder is raised. The crystal holder is then used again as a support member without further processing. In the method of the present invention In a specific embodiment, the implant donor can be in detachable contact with the support member (eg, the crystal holder assembly), wherein the interaction force between the donor and the wafer during the delamination is only the weight of the donor body on the crystal holder or It is only the weight of the crystal holder assembly on the donor body. In the case where contact is established only by the weight of the fine body, the donor body can be oriented with the implant face down and in contact with the crystal holder. Alternatively, the donor body can be oriented The implant face is facing up and not in contact with the crystal seat. In this case, the seesaw can be used to stabilize the layer during or after delamination. In other embodiments, the 4 is 10

S 201246301 Touch-in steps include the vacuum force between the crystal holder and the donor body. A vacuum force can be applied to the donor body to temporarily secure the donor body to the crystal holder assembly without the use of a chemical reaction, electrostatic stress or the like. As in the present invention, the contact of the layer with the unbonded support member during the steps of delamination and damage anneal provides several significant advantages. The steps of delamination and tempering are carried out at relatively high temperatures. If a preformed support member, such as an adhesive or a chemical, is applied to the donor prior to the high temperature steps, it must be exposed to the elevated temperature with the laminate, as any intervening layer. Many materials are unbearable for high temperatures, and if the coefficient of thermal expansion (CTE) of the support member and the layer are mismatched, heating and cooling can create strain that can damage the thin layer. Thus, the unbonded gift elements &amp; are used to make the optimized surface of the layer body regardless of the bond and peeling agreement that may inhibit the formation of the defect free layer. Tempering can occur before or after the separation of the layer from the donor. After the donor body is brought into contact with the crystal seat assembly, heat can be applied to the donor body to cause the layer and the donor body to split in the split plane. The delamination conditions can be optimized to split the layer from the donor (Fig. 3, step 3) in order to minimize physical defects of the layer when it is delaminated without the adhesive support element. The delamination parameters can be optimized for a specific donor. Delamination occurs at atmospheric pressure. A delamination heat distribution of one, two or more thermal ramps may be applied. In some embodiments, the delamination conditions can include a single rapid thermal ramp to a peak delamination temperature greater than 600 °C. The rate of thermal heating may be 10 ° C / min, 200 ° C / min or more. The crystal holder • h material may have a heat capacity that is less than the donor body and is resistant to thermal degradation at the final delamination temperature to promote delamination of the method of 201224301. In other embodiments, the final delamination temperature can be between 400 and 600 ° C, and the rate of temperature rise is any speed, but a uniform temperature of babe is applied to the surface of the layer. The crystal holder assembly can comprise a thermally anisotropic material to promote a uniform heat distribution of the donor surface during delamination. In some embodiments, the delivery of the donor body to a temperature-extended region enables uniform heating of the donor from one end to the other. In one embodiment, the donor is moved from a lower temperature zone to a warmer temperature zone (e.g., a belt furnace). The rate of movement provides a rapid temperature change for the donor, such as 60 ° C / min, 200. (: / minute or more. The delamination layer can be separated from the donor body by any method (Fig. 3, step 4), for example, by applying a deformation force to the first surface of the donor body to leave the opposite side of the newly formed layer body. In some embodiments, the donor body can be deformed away from the delamination layer. In other embodiments, the delamination layer can be deformed away from the donor body. After delamination, the first surface can be applied. The free standing layer surface is detachably contacted with a support device (eg, a crystal seat assembly). In some embodiments, the contact force can include a vacuum force between the layer body and the crystal plate. In some embodiments The 'contact force' is only the weight of the donor body on the layer. The chuck plate can be attached to the donor body on the opposite surface of the layer. In some embodiments, the attachment can be applied through a porous chuck plate. The vacuum force applied to the body. The vacuum pressure can be applied by the suction cup to attach the donor body to the suction cup. The suction cup can be coupled to a flexing device, such as a curved arm, or a deformable plate or Its analogue. Applied to flexure The force is applied to deform the donor body away from the layer body. This force can deform any part of the donor body (eg, the edge or other area) away from the layer body. This deformation can cause the donor body to leave the layer body.

S 201246301 One part of the surface is greater than 1 mm, and the donor edge is loosened when the layer is completely separated from the donor. The separated layers can be left on the base plate or transferred to different temporary or permanent support elements for further processing. In some embodiments, a permanent support can be constructed on the self-supporting layer. One aspect of the invention comprises a method of making photovoltaic cells from a free standing layer and starting with a donor having a suitable semiconductor material. Suitable donors can be single crystal twins having any useful thickness (e.g., &lt; about 2 Å to about 1 〇〇〇 microns thick). Usually the wafer has a Miller index of U〇〇} or {111}, but other orientations can be used. In an alternative embodiment, the donor wafer can be thicker and the maximum thickness is limited only by the practice of wafer processing. Alternatively, you can use wafers or money from the day or the day of the day, as well as microcrystalline stone, (micr〇crystaiiine siiicon), or other semiconductor materials, including 锗, 石夕锗 or 丨化乂 or 仏... Semiconductor compounds such as GaAs, InP, and the like. Other materials such as SiC, LiNb〇3, SrTi〇3, sapphire and the like can be used. In this regard, Xingjing usually thinks that the grain control is about one millimeter or more of semiconductor material, while the polycrystalline semiconductor material has a small stand, about a few hundred. The particles of the microcrystalline semiconductor material are extremely small, e.g., around angstroms. For example, the microcrystalline hair may be completely spliced or may be included in a non-day-day amorphous matrix. Polycrystalline or polycrystalline semiconductors are understood to be fully or substantially crystalline. Those skilled in the art should be familiar with the 'conventional terminology' single crystal ♦', and do not exclude the defects of occasional defects or impurities (for example, dopants for conductivity enhancement). The method of forming single crystal is usually to produce a circular wafer. However, the donor body can have other shapes. For photovoltaic applications, the cylindrical single crystal key (coffee) (10) m〇n〇crysta out ne i zero t) is often machined into eight before cutting the wafer.

S 201246301 Angled cross section. The wafer can also have other shapes, such as a square. Unlike circular or hexagonal wafers, square wafers have the advantage that they can be edge-to-edge aligned on the PV module with minimal unused gaps. The diameter or width of the wafer can be any standard or custom size. For simplicity of description, the present disclosure will describe the use of a single crystal germanium wafer as a semiconductor donor, although it will be appreciated that other types and materials may be used. It is preferred to implant ions through the first surface, hydrogen or a combination of hydrogen and helium, to define the split plane, as previously described. The total depth of the split plane depends on several factors, including the implant energy. The depth of the split plane may be from about 0.2 to about 100 microns from the first surface, such as between about 0.5 to about 20 or about 50 microns, such as between about 1 to about 10 microns, at about 1 or 2 microns to about Between 5 or 6 microns, or between about 4 and about 8 microns. Alternatively, the depth of the split plane can be between about 5 and about 15 microns, such as about 11 or 12 microns. The temperature and dose of the ion implantation can be adjusted depending on the desired depth of the material to be implanted and the plane of the splitting to provide a free standing layer that is substantially free of physical defects. The ion dose can be any dose, for example between l.OxlO14 and 1.0xl018H/cm2. The implantation temperature can be any temperature, such as above 140 °C (e.g., between 150 and 250 °C). Implantation conditions can be adjusted based on the Miller index of the donor and the energy of the implanted ions. For example, a single crystal germanium having a Miller index of {111} may require a different set of implantation conditions than a single crystal germanium wafer having a Miller index of {100}. One aspect of the invention includes adjusting the implantation conditions to maximize the substantially defect free area of the layer. In some embodiments, the implant dose can be less than 1.3 x 1 017 H/cm 2 and the implant temperature is greater than 25 ° C, such as between 80 ° C and 250 ° C. In some concrete

14 S 201246301 Example _, a single crystal crucible with a Miller index of {1〗1} can be implanted at a temperature of 150 to 200 °C. In some embodiments, a single crystal germanium donor having a Miller's index of {100} may be implanted at a temperature of 100 to 150 °C. In some embodiments, a higher implantation temperature produces a more uniform delamination. Referring to Figure 4A, the implant face 1 of the body 20 can be detachably contacted with a support member (e.g., the wafer holder assembly 400). The crystal seat assembly can be in contact with the donor body while still not being bonded to the donor body. The contact force between the donor and the crystal holder assembly during delamination is only the weight of the donor body. Alternatively, the entire assembly and the donor body can be reversed and the contact force can be the weight of the crystal seat assembly on the donor body. In some embodiments, the contact force of the donor and the crystal holder can be increased by the vacuum between the crystal holder and the donor. The material properties of the crystal holder assembly promote delamination of the substantially defect-free layer and the donor. The wafer holder assembly 400 can comprise a flat single wafer plate as shown in Figure 4A. In some embodiments, the surface of the crystal holder assembly may comprise a coefficient of thermal expansion (CTE) over a wide temperature range (eg, 〇 to 1 〇〇〇. 〇 is the same material as the palladium body. The crystal holder assembly A material having a heat capacity substantially less than or equal to the heat capacity of the donor body may be included to support rapid thermal heating to a delamination temperature above 4 。. In other embodiments as shown in FIG. 4B, the crystal seat assembly 4 The crucible 1 may comprise a plurality of plates to provide suitable conditions for processing the body from the donor body 20. In some embodiments, the contact force of the crystal holder assembly 4G1 with the donor body may be applied to the crystal through the vacuum channel tip. The vacuum of the base plate 405 of the seat assembly. (= as shown in the figure). When the body is held by vacuum force, the seat plate is a hole; 5 ink or vacuum pressure permeable material. For example, the material of the porous plate 405 may include porous graphite, porous nitride, porous stone ' ' multi c 15 201246301 hole carbon cutting, laser drilling dream, laser drilling obstacle, oxidation Ming, nitrite, nitrogen Fossil eve or any combination of them. Applicable between about 〇 to about -i〇〇^ . Air pressure, e.g., susceptor assembly) &gt;, a similar expansion coefficient between G psi _15 psi or substantially identical to the first - the plate 405. In some embodiments, the heat distribution applied during delamination must be uniform f on the surface of the donor to promote successful detachment of the free-standing layer in order to achieve uniform heat distribution on the surface of the donor, total The second plate 415 may be included adjacent to the first plate 4〇5, and the second plate 415 preferably has a higher thermal conductivity in a plane with the donor body than the direction in which the body is applied. Thermally anisotropic materials, such as pyrolytic graphite, are well suited to promote uniform application of heat distribution to the donor in this manner. The crystal holder assembly may optionally include a thermal insulation plate 425 disposed under the thermally anisotropic plate 415, such as a quartz plate, to facilitate thermal insulation of the donor body from potential cooling forces (❹, operating vacuum manifold). Maintain the heat distribution required for delamination. After the donor body is in contact with the crystal holder assembly, a thermal delamination protocol can be applied to create a free standing layer that is split by the donor body 20 in a split-flat (4) without substantial physical defects. The delamination protocol may comprise - or two or more heats up to - or two or more peak delamination temperatures' followed by hot soaking for a period of time, such as less than 2, 3, 4, 5 or 6 minutes. The central peak delamination temperature can be deleted from 35 (). Between c is for example between. It is also possible to optimize the heating scale during the thermal delamination distribution. The rate of thermal heating, for example, can be between seconds and deductions. The delamination pressure can be atmospheric pressure mosquito height. The thermal delamination distribution can be optimized according to the material and orientation of the donor to form a substantial physical defect free

S 16 201246301 Self-supporting layer. In some embodiments, by greater than 15. The enthalpy/second of the single-hot temperature rate is applied to the delamination heat distribution to be greater than the final delamination temperature; the crystal layer body may be peeled off by the donor body oriented at {Ul}. The peak delamination temperature can be maintained at _ 50, 25 seconds or less. In other embodiments, the heat distribution may be at a rate of temperature rise of 15 C/mi to at, 6 (8). The peak delamination temperature between c' is such that the rate of thermal heating on the surface area of the layer is substantially the same. The peak delamination temperature can be maintained for less than 3 minutes, i minutes, or less than 3 seconds. &quot;Hairback can include a thermally anisotropic material, such as the second plate 415' of the figure to facilitate application of uniform heat distribution to the donor surface during delamination. Alternatively, the dejanation may include two or more thermal ramps to provide more delamination of the controlled object. Multiple thermal rises can be applied to donors with a Miller index of {111}, U〇〇} or other orientations. For example, the heat profile may comprise a first thermal ramp rate of 10 to 20 < / per second to a peak temperature between 350 and 500, followed by a second thermal ramp rate between about 5 and 20 ° c / sec to 60 ( ), the peak temperature between 8〇〇〇c. The peak delamination temperature after each thermal rise can be maintained for less than 6 sec seconds, followed by cooling down or further processing to temper or separate the delaminated layer. In some embodiments, the delamination protocol can include two or more thermal ramps under thermal anisotropy conditions to provide more delamination of the controlled object. Other embodiments of the multi-heat ramp rate are included at 0.5, 1 Torr. The first heat between 匚/sec is raised to a peak temperature between 350 and 450 ° C, followed by a second heat increase between about 〇·1 and 5 ° C/sec to 450 and 700 ° C. The sharpness between the two. The peak delamination temperature after each thermal rise can be maintained for less than 1 second. Then it is cooled down or further processed to temper the delaminated layer. Heat score 5 17 201246301 The application of the cloth can be achieved by moving the crystal seat assembly/split donor body from a first region having a temperature to a second region having a different temperature. The first temperature can be lower than the second temperature. This method can be implemented via a belt furnace or other conveying device. It has been found that the implantation step of defining the split plane may damage the crystal lattice of the single crystal donor wafer. If not repaired, this damage may reduce the efficiency of the cells. In the present disclosure, tempering removes residual physical defects of the delaminated layer. Tempering at relatively high temperatures, for example, above 800, 850, 900 or 950. (:, will repair most of the implant damage in the layer. After delamination, the self-standing layer can be in contact with the crystal holder' and the donor body is still at the top. By applying a deformation force to the opposite of the layer body The surface of the donor body can deform the donor body away from the delamination layer. This method can apply a sufficiently gentle force to separate the donor body from the layer body having a thickness of less than 50 microns without knowing the damage layer. Then, the vacuum suction cup device is placed on the body. The top surface of the body is used to bring the donor surface into contact with the layer on the reverse side. The first chuck plate of the vacuum chuck device can cover the entire surface opposite to the layer body, as shown in Fig. 5 (suction cup) or cover opposite to the layer body Part of the surface, as shown in Figure 6 (sucker plate 615). The first chuck plate can be a multi-well plate (for example, porous graphite, porous boron nitride 'porous tantalum, porous tantalum carbide, laser drilled, Laser drilling carbon, gasification, nitriding, tantalum nitride or any combination thereof) or containing the true two channels. The vacuum is applied by the first suction cup and vacuum clamps the donor. First suction cup. Pressure can be applied to the back of the flexing device, 10% The bending device's contact plate and the slight offset of the body clamped by the vacuum. One aspect of the vacuum chuck method is to first pull the edge of the donor body away from the layer body, which allows air to flow between the donor body and the surface of the layer body. This action excludes suction on the newly formed surface as this may result in physical defects 18

S 201246301 Trap 0 Referring to Figures 5A and 5B, in some embodiments, the layer body and the donor body can be separated by deforming the donor body away from the layer body with a flexure plate. This deformation promotes separation of the donor body from the free standing layer in a manner that minimizes defects formed in the free standing layer. Figure 5A illustrates a first step of one embodiment of this method wherein the donor body 20 is consuming to a separation chuck 500' such as a vacuum chuck. The suction cup 500 can include a first suction cup 515 that can be retained in a surface 520 of the donor body 20 opposite the layer 40 via vacuum pressure applied by vacuum passage 525 or any other adhesive force. The first suction cup 515 can be coupled to a flexing device, such as a compliant arm, a flexing arm, a flexplate 535, or the like. The flexing device can be consuming to a backing plate 545 or support arm, fulcrum or the like. The delamination layer 40 can be detachably contacted with the wafer plate 405 of the wafer assembly 402. Through the vacuum pressure applied through the vacuum channel 410, an additional contact force can be applied to the wafer plate 405. The separation is achieved by applying a force to deflect the surface of the donor body that is opposite the surface of the layer. This separated embodiment is illustrated in Figure 5B, which illustrates the flexing of the flexplate 535 and the deformation of the donor body 20 away from the layer body 40. In this particular embodiment, the application of the channel 555 is applied to the scratch. The back of the plate 535 causes the pull-up plate 535, the second suction cup plate 515, and the gripping body 20 to be slightly offset. The positive pressure can be applied by any means, such as a gas flowing between the flexible plate 535 and the support plate 545. The mold deforms part of the body 20 by 1 to 3 mm or more away from the layer to initialize the separation of the body 40 from the split body 40 which remains on the base plate 405. In an alternate embodiment, the donor body can remain fixed to the wafer deck, and the split layer body can be attached to the chuck plate and separated from the donor body 19 201246301, as described above. 6A and 6B illustrate an embodiment of the separation method, wherein the separation chuck includes a first chuck plate 615 for attaching only to a portion of the surface of the donor body 20 opposite the layer 40 and A flexing device coupled to the rigid arm 63 5 is coupled. The attachment of the first chucking plate 615 to the donor body 20 utilizes the vacuum force transmitted through the vacuum channel 625. The first chuck plate 615 can be of a porous type. Rigid arm 635 can be coupled to fulcrum 645 or any device designed to move the rigid arm away from the donor. The layer 40 can be attached to or simply in contact with the base plate 405. As shown in Fig. 6B, the rigid arm 635 flexes away from the layer 40 causing the portion of the body 20 to deform away from the layer 40 that remains stationary on the base plate 405. In an alternate embodiment, the donor body can remain fixed to the base plate while the split layer is attached to the suction cup 615 and separated from the donor body, as described above. A tempering step can be performed at any stage of the process, such as after separation of the free standing layer, to repair damage to the crystal lattice in the layer during the implantation, delamination step or separation step. Tempering may be performed while the layer is still on the crystal holder assembly, for example, at a temperature above 500 ° C, such as 550 '600, 650 '700, 800, 850 ° C or higher, such as about 950 ° C Or higher for any period of time. The tempering of the structure, for example, may be carried out at about 650 ° C for about 45 minutes or at about 800 ° C for about 10 minutes, or at 950 ° C for 120 seconds or less. In many embodiments, temperatures in excess of 850 ° C last for at least 60 seconds. In some embodiments, it is advantageous to remove the donor prior to tempering the layer to a temperature above 700 ° C thereby retaining the structural and electronic properties of the donor for subsequent repeated implementation of the implant-delamination process. of. After tempering the self-supporting thin layer, the photovoltaic device can be made from the layer.

S 20 201246301 To this end, the layer may be transferred to a temporary or permanent support for further processing, as described in U.S. Patent Application Serial No. 12/980,424, filed on Dec. 29, 2010; Form a Device by Constructing a Support Element on a Thin Semiconductor Lamina" 'and thus incorporated herein by reference. For example, this can be done with a vacuum slab (not shown). To effect this transfer, a vacuum slab can be placed On one surface, the vacuum of the first surface is simultaneously released. After transferring to the vacuum paddle, the second surface is held by vacuum while exposing the first surface. Referring to Figure 7A, the layer 40 can be fixed to the temporary carrier 5, for example Adhesives are used. This adhesive must withstand moderate temperatures (up to about 2 〇〇. [:) and must be released immediately. Suitable adhesives include, for example, maleic anhydride and rosin. a polyester which is soluble in hydrocarbons; or polyisobutylene and rosin which is soluble in detergents. The temporary carrier 50 can be any suitable material such as glass, gold. , polymer, ruthenium, etc. After transfer, the first surface is fixed with an adhesive to the temporary carrier 5 while the second surface 62 is exposed. As shown in Figure 7B, it can be further processed to form a photovoltaic crucible. It is possible to remove the surname step that removes the damage caused by delamination, for example by applying a mixture of hydrofluoric acid (HF) and nitric acid, or using koh. It can be found that tempering is sufficient to remove all or Almost all damage and this etching step is unnecessary. The use of diluted HF solution can eliminate the surface of organic materials and residual oxides; for example, 10:1 hydrofluoric acid lasts for two minutes. After this wet treatment, &gt; The non-daily day layer 72 is on the first surface 62. This layer 72 can be heavily doped and has a thickness of, for example, between about 50 and about 350 angstroms. Figure 7B shows the actual 21 201246301 The intrinsic or near intrinsic amorphous germanium layer 74 is included between the second surface 62, the doped layer 72, and the direct contact with the two. In other embodiments, the layer 74 can be omitted. In this embodiment The heavily doped germanium layer 72 is heavily doped n-type, and its conductivity type and lightness The doped 11-type layer body is the same. The lightly doped n-type layer body 40 includes a base region to be formed of photovoltaic cells, and the heavily doped amorphous germanium layer 72 provides electrical contact to the base region. If so, the layer % is sufficiently thin to prevent the electrical connection of the layer 40 and the heavily doped germanium layer 72 from forming a transparent conductive oxide (TCO) layer 11 与其 directly in contact with the amorphous germanium layer 74. tc〇110 Suitable materials include indium tin oxide and aluminum-doped zinc oxide. The thickness of this layer, for example, may be between about 5 Å and about 〇〇 5 Å, for example about 750 angstroms thick. This thickness enhances the reflection of the reflective layer to be deposited. In some embodiments, the layer can be substantially thinner, such as from about 1 Torr to about 2 angstroms. After the layer is tempered, the amorphous germanium layer 76 can also be applied to the second surface. As shown in the completion device of Fig. 7C, the incident light enters the layer 40 of the first surface 10. After passing through the layer body 40, the unabsorbed light exits the layer body 40 at the second surface 62 and then passes through the TCO layer 110. The reflective layer 12 formed on the TCO layer 11 reflects the opportunity for the light to return to the cell for a second absorption, which improves efficiency. A conductive reflective metal can be used for the reflective layer 12. A wide variety of layers or stacks can be used. In a specific embodiment, the reflective layer 12 is formed by depositing a very thin layer of chromium on the layer of germanium, for example, from about 30 or 50 angstroms to about 1 angstrom, followed by deposition of about ιοοο to about 3 Å of silver. In an alternative embodiment not shown, the reflective layer 12 can be aluminum having a thickness of about 1000 to about 3 angstroms. In the next step, a layer is formed by plating. Conventional plating methods cannot be used for aluminum layers, so if aluminum is used for reflection 22

S 201246301 Layer 12, additional layers or layers must be added to provide a seed layer for plating. In a specific embodiment, for example, a layer of titanium, such as about 200 to about 3 angstroms thick, followed by a seed layer, such as cobalt, may have any suitable thickness, such as about 500 angstroms. A metal support member 60 is formed on the reflective layer 12 (in this embodiment, a chrome/silver stack). In some embodiments, the metal support member 60 is formed by electroplating. The temporary carrier 50 and the layer body 40, and associated layers, are immersed in the electrolyte bath. The electrodes are attached to the reflective layer 12 and current is passed through the electrolyte. Ions of the electrolyte pool are collected on the reflective layer 12 to form a continuous metal support member 60. The metal support member, for example, may be a nickel-iron alloy. Iron is cheaper, but the coefficient of thermal expansion of nickel is well matched to the coefficient of thermal expansion of niobium, which reduces the stress during subsequent steps. The thickness of the metal support member 6 turns can be as desired. The metal support member 60 should be thick enough to provide structural support for the photovoltaic cells to be formed. The thicker support member 60 is less likely to bend into an arcuate shape. In contrast, minimizing thickness reduces costs. Those skilled in the art will choose the appropriate thickness and iron: nickel ratio to balance these issues. The thickness of the metal support member 60 can be, for example, between about 25 and about 100 microns, such as about 50 microns. In some embodiments, the iron-nickel alloy has from about 55 to about 65 percent iron, such as 60 percent iron.

The lightly doped n-type layer body 40 contains the base of the photovoltaic cell, and the heavily doped germanium-type amorphous germanium layer 76 serves as the emitter of the cell. Severe doping of the n-type amorphous germanium layer 72 provides excellent electrical contact to the base region of the cell. Electrical contact must be made on both sides of the cell. Contact to the amorphous germanium layer 76 is made via a grid 57 of the TCO layer 112. Metal support member 60 is electrically conductive and via conductive layer 12 and TCO

S 23 201246301 Layer 110 is in electrical contact with base contact 72. Eighth Figure 7C illustrates a completed photovoltaic assembly 8 〇 comprising photovoltaic cells and metal cutting elements 60. In (iv) the specific implementation, the dopant used in the material change, the heavily doped amorphous germanium layer 72 can be used as an emitter, while the heavily doped amorphous layer 76 serves as a contact to the base region. The amorphous stellite layers η, % may each be in direct contact with the first and second surfaces of the self-standing layer. The human light (indicated by the arrow) falls on the TCO 112, enters the cell 40 in the heavily doped p-type amorphous layer 76, enters the layer 40 on the first surface 10, and travels through the layer 4〇. The reflective layer 12 will reflect some of the light (four) cell cores in this embodiment as the substrate. Receptor element 6A forms a photovoltaic assembly 80 with layer 40 and associated layers. A plurality of photovoltaic assemblies 8 can be formed and fixed to the support substrate 90, or alternatively, to support the upper layer, not shown). Each photovoltaic assembly 80 contains photovoltaic cells. The photovoltaic cells of the module are generally electrically connected in series. The crystal holder assembly 凊 refers to Figures 8A and 8B'. The wafer holder assembly as previously described in the description of Figures 4A and 4B may comprise one or more wafer plates. The wafer holder assembly 4 can be disposed in the lower half of the cell chamber 8A of Figure 8B and is configured to support suitable conditions for delamination, tempering or separation of the self-standing layer. In Figure 8A, the first plate 405 can be used to contact the first surface of the donor body and provide detachable support for the layer during delamination, separation, tempering, or any combination thereof. The first wafer deck 4〇5 can be used throughout the layer fabrication process, or a separate panel having independent properties that can be optimized for a particular step can be used. For example, the donor body can contact the first wafer deck assembly during implantation and contact the second crystal seat during delamination

S 24 201246301 plate 'and contact with the third base plate during separation. The desired upper surface (10), such as a 'suction cup&apos; (not shown), can be used to contact the second surface of the donor body opposite the first surface. The crystallized layer _ provides a physical layer of the thin layer after delamination and also provides properties that contribute to the affinity layer and tempering material. In some implementations, the first plateholder may be an inert solid such as graphite. In some embodiments of the present invention, the secret body is in detachable contact with the vacuum permeable wafer holder assembly. The porous material can be used in the first platen such that the vacuum pressure during the delamination enables the donor or layer to be held in the pedestal. The porous material may comprise porous stone.s, porous nitrogen ", porous stone, = hole carbonized 矽 'laser drilling 矽' laser drilling 碳, alumina, nitriding, nitriding or others Any combination. Only the vacuum can be selected in a surrounding environment (for example, air or a negative gauge pressure or a direete (j vacuum pressure) via a sequence of vacuum channels 410. The porous crystal plate material that contributes to the processing flow is important for the delamination process. The material properties that contribute to the delamination process include: low static friction coefficient (for CSF such as 〇1 to 〇5) 'low hardness (mo style) Hardness less than 1 〇), average pore size less than about 15 microns, can be machine flattened (ie 'can use conventional mechanical techniques/materials for such crystal holders') low roughness (roughness less than 丨 micron), flat Degree (the undulation of the main body is less than 10 microns), sufficient conductivity to prevent static electricity from appearing between the layer body and the crystal seat, etc. In a specific embodiment, the coefficient of thermal expansion of the first crystal seat plate 4〇5 (CTE) ) can be related to the CTE of the donor body In another specific implementation embodiment, the heat capacity of the susceptor plate can be less than or equal to the heat capacity thereof is administered. In some particular embodiments have, a single crystal silicon body, and the heat capacity of the susceptor is applied with approximately 25

S 201246301 The same as 矽 (about 19.8 joules / mole. κ). Under these limitations, a number of engineering ceramics and other materials may be selected to provide characteristics for the first wafer deck 405. In a specific embodiment, RingS (i〇rffTMS ink grade R6340 can be used because it has a similar CTE as ruthenium. To prevent lateral forces from acting on the donor or layer during heat treatment associated with delamination or tempering Body, this is important. In the case where the CTE of graphite and bismuth is not similar, temperature changes may cause the layer to wrinkle or tear. With CTE-matched graphite, the layer may still be slightly retained during temperature changes. Vacuum or no vacuum retention. Bulk etch can be applied to graphite to improve purity. Common body etching process consists of 24-hour high temperature baking in a vacuum chamber where hydrogen chloride gas has been introduced. Other implementations of the delamination method In the example, a rapid high temperature heat distribution is applied. In these particular embodiments, a platen that is resistant to off-gassing or degradation is desirable at temperatures up to 800 or 900 or 1000. The crystal holder material may have characteristics that prevent contamination of the donor body, such as being able to withstand the temperature of the process and atmospheric exposure without degrading the material. The material is inherently resistant to degradation or coated at elevated temperatures. A material used as a barrier layer for donor contaminants. For example, porous tantalum carbide (which is hard, durable, and has excellent CTE matching) can be coated with soft boron with low CSF and high purity. In embodiments, optimized porous/laser drilling materials can be utilized. Laser drilling materials allow the distinction between the need for most suction cups (porosity, CTE, flatness/machineability) and surface materials (low CSF, The necessity of softness, high purity, etc.) For example, a material that provides an interface to the above-mentioned desired property list may be coated with a stock material having the desired properties of the base block.

S 201246301 In the example, metal oxides, carbides, nitrides, ceramics, and superalloys that meet the above specifications can be used as candidates. The characteristics of the above-mentioned crystal holder material are advantageous for improving the quality of the layered body, including the mechanical properties of the layer body, uniform waste, and purity. In another embodiment of the invention, a uniform temperature distribution can be applied to the donor during delamination. In FIG. 8A, a second wafer plate 415, which may be configured with thermal anisotropy, is provided adjacent the first plate 405 to provide thermal conductivity, wherein the second platen plate 415 is in contrast to the direction perpendicular to the donor body. It is preferred to have a higher thermal conductivity in the plane parallel to the body to facilitate application of a uniform heat distribution. The presence of pyrolytic carbon, which is a highly conductive graphite material in the split plane compared to the plane of the split, increases the uniformity of the delamination temperature profile and is therefore an ideal planar heat conductor. The second plate having thermal anisotropy may include a vacuum passage 4 to facilitate dispensing vacuum pressure to the bottom surface of the first landing plate 405. Additional features may include a plurality of vacuum channels 455 that can be machined on the surface of the crystal plate to improve the distribution of vacuum pressure. In the specific embodiment of Figure 9A, a second platen 915 having a plurality of vacuum channels 955 (shown as concentric rings connected by radial paths) can be used to distribute vacuum pressure to individual porous platens. A vacuum channel on the periphery 925 of the second landing plate 915 can be used to distribute vacuum pressure to the periphery of the periphery of the base plate to secure the slab to another device or plate. In some embodiments, a heating source for the pedestal device can be provided, such as by embedding a plurality of thermal lamps within the crystallizer chamber. The heating source can be any temperature (eg, up to 1 Torr. 〇 any source 1) that can be implanted, delaminated, or tempered. In other embodiments, the heating source can be placed separate from the wafer chamber. ,

S 27 201246301 is for example but not limited to: a quartz heating or induction heating element disposed within the crystallizer chamber to heat the crystal seat assembly and/or the donor body. In another embodiment, a differential vacuum passage can be used on the base plate such that the vacuum that holds the plates 405 and 415 together separates from the vacuum that holds the donor in the base assembly 400. Figure 8A illustrates an exemplary crystal mount assembly with a differential vacuum channel. In order to change the holding force, it may be necessary to adjust the vacuum drawn through the crystal holder. In order to decouple the effect of attracting the layer body through the porous material (e.g., graphite) and the effect of attracting the first crystal seat panel itself, a differential vacuum passage for both effects can be used. The first set of channels 410 is centered and controls the suction of the layer itself. The second set of vacuum channels 460 and the annulus 47 are clamped around the edges of the first and second crystal holders to maintain the position of the first crystal holder regardless of the central body. It is possible to use this system to remove the layers while still bonding the wafer assembly together. In some embodiments, applying a vacuum during the tempering or delamination process to secure the layer to the wafer holder assembly may result in cooling of the wafer assembly. The high temperature &apos; pedestal assembly required to achieve the tempering or delamination process may comprise a plate that provides a thermal break between the donor and the vacuum manifold. The crystal holder assembly 400 of Figure 8A can add a third wafer plate 475 for use as a thermal crack between the vacuum manifold (not shown) and the first 405 or second 415 wafer plate. In an alternate embodiment, the first or second wafer deck can be used as a thermal crack between the vacuum manifold and the layer. In some embodiments of the invention, thermal cracking upon tempering and/or delamination can be achieved with a quartz disk, such as disk 975, illustrated in Figure 9B. The number of discs, e.g., one or two, may depend on the temperature range and the desired uniformity. Can be used in addition to quartz

S 28 201246301 Other thermal insulating materials capable of withstanding tempering temperatures, such as high temperature ceramics β, are machined such that vacuum can pass through them while still isolating the inner and outer rings of the differential vacuum channel. This thermal crack disk is critical when using a vacuum manifold below the water-cooled crystal seat assembly. This thermal crack prevents heat loss from the first landing plate 405, which may help achieve the temperatures required to achieve tempering and/or delamination. The properties of the thermal cracking platen 475 that contribute to the tempering process include: low diffuse foreign matter content (less than 20 PPM impurities) 'similar to the coefficient of thermal expansion of the crucible (eg, within 20% of the 矽CTE), And high temperature compatibility (for example, 1, 〇〇〇.〇, and low resistivity. It should be noted that although the crystal holder assembly of the differential channel in Figure 8A is illustrated in a combined thermal stacking manner, the differential channel The use of 460/470 and thermal stacking 475 features can be independent of each other. Likewise, thermal stacking can be used in any situation where the top surface of the support layer is at a different operating temperature than the components below the thermal cracking element. Individual components of thermal stacking (quartz as thermal cracks for top and bottom surfaces with different isolation temperatures) are used in sequence or configuration. Separating devices 10A and 10B illustrate the method of Figure 5B for separating donor and layer A specific embodiment of the body separating the suction cup 100. In operation, the surface of the donor body opposite the layer body is placed against the separation chuck, and the layer after the delamination (but not yet separated) is placed on the wafer holder assembly. Alternatively The layer/layer may be reversed in this apparatus. The separation chuck 1A of Figs. 10A and B includes a stack of plates 'including a perforated plate 115 (for example, graphite), a flexing device (for example, a flexible plate 135, for example, Aluminum or PEEK), and stiffened support plate 145 (eg, aluminum) ° perforated plate 29

S 201246301 115 will be referred to as graphite in the present disclosure; however, other materials are also possible as described below. The hard plate 145 has a distribution passage 15 therein for applying a positive pressure to the back surface of the flexible plate 135. The distribution channels can be configured, for example, as concentric rings connected by radial channels, or as linear grids. The flexible plate 135 can be fixed to the periphery of the hard plate 145. When a positive pressure is applied, the central portion of the flexible plate 135 is bent into a convex shape as shown in Fig. 10B, forcing the perforated plate 115 to follow the shape. The flexplate is offset by, for example, about 1 or 2 or more millimeters. The working pressure of the device can be a pressure, for example, 0.1 to 5 bar. This pressure depends on the thickness of the material in the device. The three requirements of the flexplate are mechanical strength that can withstand the applied pressure, compliance with elastic bending (as opposed to fracture), and impervious air. In one embodiment, the porous layer 115 is about 3 mm thick and the gas impermeable flexible sheet 135 is about 5 mm thick. Other material choices for the flexplate 135 include soft metals such as aluminum, gauge steel or polymers, elastomer or rubber based materials. In some embodiments, the donor (not shown) can remain against the perforated plate 115 by applying a vacuum between the flexible sheet and the perforated plate. Since the graphite plate is porous, a vacuum can be applied to the distribution channel 160' behind the plate 115 via the vacuum inlet to the vacuum volume to provide a uniform suction through the perforated plate 115. EXAMPLES Formation of a layer body from a {111} single crystal donor wafer This method was started with a donor wafer having a Miller index of {111}. A substantially flat first surface is provided, but it may have some existing texture. The donor was implanted at 400 keV with a total ionic agent weight of 4.Ox 10 丨 6 hydrogen atoms per cubic centimeter. The implantation temperature is approximately 16 °C. The implant produces a dissociation

S 30 201246301 The first surface of the body has a 4.5 micron split plane. The donor body is doped with an n-type dopant (e.g., boron) to have a resistivity of 丨 to 3 ohm-cm. After implantation, the implanted face of the donor wafer is brought into contact with the wafer holder assembly. The crystal seat assembly is composed of a perforated plate of porous graphite. In addition, the neodymium graphite has been mechanically smoothed to a uniform smooth surface by using 15 grit sandpaper. No vacuum pressure is applied to the wafer. Once in contact with the crystal seat assembly, a thermal delamination distribution comprising two thermal temperatures is applied. The following temperature rise sequence was applied starting from room temperature: 15. (: / sec rises to 40 (TC, stays in copper. c lasts 6 sec seconds, then rises to 7 GGC at 1 GC / sec. At this point, the layer has been delaminated from the donor wafer and borrowed UlGt / material to 〇 (: And turn around for a minute and then fire. Then 'let the wafer cool to room temperature β - my body is separated from the temperature and the layer is separated while the first surface of the layer (formerly the donor body) is still fixed to the crystal plate. The vacuum force of 13(10) is applied to the perforated plate of the crystal seat assembly, which fixes the layer body to the crystal seat assembly. The first surface case opposite to the first surface in the donor body and the perforated plate of the separation suction cup that is consumed to the vacuum line The perforated plate separating the suction cup is coupled to the rigid arm containing the fulcrum. When the vacuum is applied to the perforated plate of the suction cup, the portion of the plate that closely adheres to the donor body causes the arm to pivot with the fulcrum. The partial donor body is lifted away from the layer body. After the initial separation from the layer body, the hand is lifted away from the layer body and returned to the production line. The layer body is further processed to form a photovoltaic device. The sub-financing method is at ambient temperature and pressure. Under the {100} single crystal donor wafer layer method by Miller The number is {1 called the donor wafer start. Provides the first surface of the substantially flat L, but it may have some existing structures.

S 31 201246301 8·0χ 1 The total ion dose of 〇16 hydrogen atoms/cubic centimeters was implanted at 4 〇〇 keV. The implantation temperature is about 16 inches. (: The implant produces a 4,5 micron split plane from the first surface of the donor body. After implantation, the implanted wafer is brought into contact with the wafer holder assembly. The crystal holder assembly is made of porous graphite The crystal plate is constructed. The porous graphite has been mechanically smoothed to a uniform smooth surface by using 15 grit sandpaper. The crystal holder assembly includes a second crystal plate having thermal anisotropy. The second wafer plate comprises pyrolytic graphite and a thermally anisotropic material to assist in uniform heat treatment. The donor is fixed to the wafer holder assembly by applying a vacuum of -13 psi to the first wafer plate. After the assembly and the donor, a thermal delamination distribution consisting of: a thermal ramp rate of 2.3 ° C / sec to a first delamination temperature of 440 ° C for 60 seconds, followed by 2 2 ° C / sec is applied. The thermal heating rate was maintained at 490 ° C for another 500 seconds. After delamination, the self-standing thin layer body including the first surface (the first surface of the donor body) and the second surface opposite to the first surface was 950. Tempering for 3 minutes at °C. Allow the wafer to cool to room temperature. The body is separated from the layer at room temperature and the layer is The first surface (originally the donor body) is still fixed to the base plate and a vacuum force of -13 Psi is applied. The second surface portion of the donor opposite the first surface is in contact with the perforated plate coupled to the separation chuck of the vacuum line The perforated plate is also coupled to a rigid arm comprising a fulcrum. When a vacuum is applied to the perforated plate, the portion of the plate that closely adheres to the donor body causes the rigid arm to pivot about the fulcrum, which causes the portion of the donor to rise away The layer body is raised by hand to lift the donor body away from the layer body and back to the production line. The layer body is further processed to form a photovoltaic device.

S 201246301 Various specific embodiments have been provided for clarity and completeness. Obviously, it is impractical to list all possible specific embodiments. Other embodiments of the invention will be apparent to those skilled in the art upon accessing this disclosure. Several manufacturing methods have been described in detail herein, but any other method capable of forming the same structure can still be used while the results still fall within the scope of the present invention. The following detailed description describes only a few of the many forms that can be employed by the present invention. For this reason, the detailed description is intended to be illustrative and not limiting. The scope of the following claims and all equivalents thereof are intended to define the scope of the invention. [Simple diagram of the diagram 3 Figure 1 is a cross-sectional view of a prior art photovoltaic cell. A cross-sectional view of Figures 2A through 2D illustrates the stage of formation of a photovoltaic device of U.S. Patent Application Serial No. 12/026,530 (Sivaram et al.). The flowchart of Figure 3 illustrates the steps of an exemplary method in accordance with aspects of the present invention. Cross-sectional views of Figures 4A and 4B illustrate stages of formation of a layer body in accordance with a particular embodiment of the present invention. Cross-sectional views of Figures 5A and 5B illustrate the separation of the layers in accordance with a particular embodiment of the present invention. Cross-sectional views of Figures 6A and 6B illustrate the separation of the layers in accordance with a particular embodiment of the present invention. The cross-sectional views of Figures 7A and 7C illustrate the stages of formation of a photovoltaic device that constitutes a metal support member. Figures 8 and 8 are cross-sectional perspective views of an exemplary crystal seat assembly of the present invention. 33 201246301 Figure and top perspective view. The top views of Figs. 9A and 9B illustrate a specific embodiment of the crystal panel of the present invention. The perspective cross-sectional views of Figures 10A and 10B illustrate a separation chuck of one embodiment of the present invention.

S [Description of main component symbols] 1... implanting ions into the body 90... supporting the substrate 2... detachably contacting the donor and the crystal holder 100... separating the suction cup 3... Body and donor delamination 110...transparent conductive oxide (TCO) layer 4...separation layer body 112...TCO layer 10...first surface 115...perforated plate 12...reflective layer 135. ..flex board 20...semiconductor body 145...stiffing support plate 30...split plane 150...distribution channel 40...layer body 160...distribution channel 50...temporary carrier 400 ...Crystal assembly 57... Grid 401...Crystal assembly 60...Receptor 402...Crystal assembly 60...Metal branch #Element 405...Porous base plate 62.. Second surface 405...first plate 72...amorphous germanium layer 410...vacuum channel 74...intrinsic or approximate intrinsic amorphous germanium layer 415...second plate 76...amorphous germanium layer 425... Thermal insulation board 80... Photovoltaic assembly 455... Vacuum channel 34 201246301 460...Second group vacuum channel 615...First suction cup board 470...Ring 625...Vacuum channel 475... Three-crystal seat plate 635... rigid arm 500... separation suction cup 645.. fulcrum 515... first suction cup plate 800... crystal seat chamber 520... surface 915 ... brother two crystal seat plate 525... vacuum channel 925... peripheral 535... compliant arm body, flexing arm, flexible plate 955... vacuum channel 5M... support plate 975... disk 555. .. channel 35

Claims (1)

201246301 VII. Patent application scope: 1. A method for forming a layer body from a donor body, the method comprising the steps of: a. implanting a first surface of a donor body with an ion dose to form a split plane; b. Heating the donor body to an implantation temperature during implantation; c. detachably contacting the first surface of the donor body with a first surface of a crystal holder assembly, wherein the first surface of the donor body and the crystal holder The first surface of the assembly is in direct contact; d. applying a delamination temperature to the donor body such that the layer body and the donor body are delaminated in the split plane, wherein the first surface of the donor body comprises the layer body a surface; e. separating the layer from the donor; and f. adjusting the combination of dose, implantation temperature, delamination temperature, and delamination pressure to maximize the area of the layer that is substantially free of physical defects. 2. The method of claim 1, wherein the crystal holder assembly is positioned below the donor body, and wherein the first surface of the donor body is separable from the first surface of the crystal holder assembly Includes: the force provided by the weight of the donor. 3. The method of claim 1, wherein the detachable contact of the first surface of the donor body with the first surface of the crystal holder assembly comprises applying a vacuum force to the crystal holder. 4. The method of claim 1, wherein the delamination temperature distribution is substantially uniform on the first surface of the donor body. 36 S 201246301 The method of claim 1 of the patent scope 'the _ the de-migration temperature distribution includes increasing the peak temperature to between 600 and 100 (rc) at least rc/sec. The method of item </RTI> wherein the step of applying a delamination temperature comprises: moving the donor from an area having a first temperature to an area having a second temperature, wherein the second temperature is higher than the first temperature. The method of claim 1, wherein the physical defects are selected from the group consisting of wavefront defects, radiation stripes, flakes, tears, holes, or any combination thereof. The method of claim 3, wherein the implanting temperature is between, for example, up to 250 ° C. 9. The method of claim 2, wherein the layer has a thickness of between about i and 20 microns. The method of claim </ RTI> wherein the first surface of the layer has a surface area greater than 90% without such physical defects, and wherein the surface area of the layer is substantially equal to the surface area of the first surface of the donor body U. If applying for a patent The method of claim 1, wherein the delamination occurs under atmospheric pressure. 12. The method of claim 1, further comprising the step of: separating the layer from the donor and then using the layer 13. The method of claim 1, wherein the first surface of the crystal holder assembly comprises a first plate capable of contacting the donor body, wherein the first plate comprises a vacuum pressure permeable to it - porous 37. The method of claim 13, wherein the first plate comprises porous graphite, porous boron nitride, porous tantalum, porous tantalum carbide, laser drilled tantalum, laser drilled tantalum carbide, Alumina, aluminum nitride, or tantalum nitride or any combination thereof. 15. The method of claim 13, wherein the first plate has a first coefficient of thermal expansion and the donor has a second coefficient of thermal expansion, And the method of claim 13, wherein the crystal holder assembly further comprises a second plate adjacent to the first plate, and wherein the second Board has The method of claim 16, wherein the second plate comprises pyrolytic graphite. 18. The method of claim 13, wherein the first plate comprises a heat capacity lower than 19. The method of claim 1, wherein the step of separating the layer from the donor comprises: applying a force to a portion of the second surface of the donor, wherein The second surface is opposite to the first surface of the layer body, and wherein the donor body is deformed away from the layer body. 20. The method of claim 1, wherein the layer body is separated from the donor body The step includes applying a force to a portion of the first surface of the layer, and wherein the layer is deformed away from the donor. 21. The method of claim 1, further comprising the steps of: • a) separating the layer from the crystal assembly; and b. fabricating a photovoltaic cell, wherein the photovoltaic cell has The first amorphous layer of the layer directly contacting the surface of the layer, and the second layer of amorphous layer directly contacting the second surface of the layer. 22. A method for forming a layer body from a donor body, comprising the steps of: a. implanting a first surface of a donor body with an ion dose to form a split plane; b. causing the donor body to a first surface of the crystal holder assembly is detachably contactable, wherein the donor body is in direct contact with the first surface of the crystal holder assembly; c. delaminating a layer of the body from the donor body at the split plane, wherein the donor body The first surface includes a first surface of the layer; and d. the first surface of the layer is applied by applying a deforming force to the first surface of the layer or the second surface of the layer Or deforming the second surface of the donor body to separate the layer body from the donor body, wherein the second surface of the donor body is opposite the first surface of the donor body. The method of claim 22, wherein the step of deforming the second surface of the donor body comprises: a: coupling a first suction cup plate to the second surface of the donor body, wherein the suction cup plate is shank To a flexing device; and b. applying the deforming force to the flexing device, wherein the deforming force deforms the flexure device and the first chucking plate and the donor body away from the layer body. 24. The method of claim 22, wherein the step of deforming the first surface of the layer body comprises: a: coupling a first chucking plate to the first surface of the layer body, wherein the chucking plate is Cooperating to a flexing device; and 39 S 201246301 b. applying the deforming force to the flexing device, wherein the deforming force deforms the flexing device and the first chucking plate and the layer body away from the donor body. 25. The method of claim 23, wherein the first chucking plate comprises a porous material through which vacuum pressure can penetrate, and wherein the method further comprises the step of applying a vacuum pressure to the first suction cup Between the plate and the donor body, wherein the vacuum pressure enables the donor body to be coupled to the first chuck plate. 26. The method of claim 25, wherein the porous material is selected from the group consisting of porous graphite, porous boron nitride, porous tantalum, porous tantalum carbide, laser drilled helium, laser drill The pores are niobium carbide, aluminum oxide, aluminum nitride, and tantalum nitride. 27. The method of claim 23, wherein the method further comprises a support plate attached to the periphery of the flexure means, and wherein the step of applying the deforming force comprises: at the flexing means and the support plate A pressure volume is formed between them. 28. The method of claim 22, wherein the step of deforming the donor body comprises: shifting a portion of the donor body away from the first surface of the layer body by 1 to 3 millimeters. 29. The method of claim 22, further comprising the step of transferring the layer from the crystal holder assembly to a transfer chuck, wherein the transfer tray comprises a porous transfer plate having vacuum pressure permeable thereto And wherein the second surface of the layer is in detachable contact with the first surface of the porous transfer plate. 40 S