TW200607023A - A method to fabricate a thin film on a substrate - Google Patents
A method to fabricate a thin film on a substrateInfo
- Publication number
- TW200607023A TW200607023A TW093123289A TW93123289A TW200607023A TW 200607023 A TW200607023 A TW 200607023A TW 093123289 A TW093123289 A TW 093123289A TW 93123289 A TW93123289 A TW 93123289A TW 200607023 A TW200607023 A TW 200607023A
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- substrate
- primary substrate
- implantation
- primary
- Prior art date
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a method, which can separate a thin film from a primary substrate and transfer it onto a target substrate. The method is practiced first by a process of epitaxial growth, which grows a thin film over a primary substrate with different doping concentration or species from the primary substrate, performing ion implantation process, which implants ions into the primary substrate and the depth of implantation is greater than the thickness of thin film to form an ion-filled catalysis reaction layer between the thin epitaxial film and the implantation peak, and then followed by a wafer-bonding method, which joins the primary substrate with a target substrate. The resulting bonded structure is treated by a thermal treatment or a high-energy ion activation activity, in which the implanted ions between the thin film and the implantation peak incorporate into aerial particles by catalysis reaction with the dopant and then the aerial particles breaks the silicon solid structure below the epitaxial film, resulting in the thin film to be transferred onto the target substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW093123289A TW200607023A (en) | 2004-08-04 | 2004-08-04 | A method to fabricate a thin film on a substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW093123289A TW200607023A (en) | 2004-08-04 | 2004-08-04 | A method to fabricate a thin film on a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200607023A true TW200607023A (en) | 2006-02-16 |
Family
ID=57807289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093123289A TW200607023A (en) | 2004-08-04 | 2004-08-04 | A method to fabricate a thin film on a substrate |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW200607023A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI552205B (en) * | 2010-12-29 | 2016-10-01 | 特溫克里克斯科技股份有限公司 | A method and apparatus for forming a thin lamina |
CN110718486A (en) * | 2019-10-17 | 2020-01-21 | 沈阳硅基科技有限公司 | Film transfer method |
TWI844701B (en) * | 2019-08-01 | 2024-06-11 | 法商索泰克公司 | Process for producing a composite structure comprising a thin layer of monocrystalline sic on a carrier substrate made of polycrystalline sic |
-
2004
- 2004-08-04 TW TW093123289A patent/TW200607023A/en unknown
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI552205B (en) * | 2010-12-29 | 2016-10-01 | 特溫克里克斯科技股份有限公司 | A method and apparatus for forming a thin lamina |
TWI844701B (en) * | 2019-08-01 | 2024-06-11 | 法商索泰克公司 | Process for producing a composite structure comprising a thin layer of monocrystalline sic on a carrier substrate made of polycrystalline sic |
US12033854B2 (en) | 2019-08-01 | 2024-07-09 | Soitec | Method for manufacturing a composite structure comprising a thin layer of monocrystalline SiC on a carrier substrate of polycrystalline SiC |
CN110718486A (en) * | 2019-10-17 | 2020-01-21 | 沈阳硅基科技有限公司 | Film transfer method |
CN110718486B (en) * | 2019-10-17 | 2022-10-04 | 沈阳硅基科技有限公司 | Film transfer method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2010036621A3 (en) | Defect-free junction formation using octadecaborane self-amorphizing implants | |
TW200610035A (en) | Etch and deposition control for plasma implantation | |
WO2010090693A3 (en) | Ion implanted substrate having capping layer and method | |
DK2257496T3 (en) | System and method for growing nanotubes by ion implantation using a catalytic transmembrane | |
EP2088632A3 (en) | Method to form a photovoltaic cell comprising a thin lamina | |
EP1883102A3 (en) | Method for improving the quality of an SiC crystal and SiC semiconductor device | |
WO2005079318A3 (en) | Methods of forming doped and un-doped strained semiconductor and semiconductor films by gas-cluster ion irradiation | |
WO2006113443A3 (en) | Etching technique for the fabrication of thin (ai, in, ga)n layers | |
TW200510179A (en) | Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal | |
TW200520100A (en) | Selective heating using flash anneal | |
WO2009111665A3 (en) | Use of chained implants in solar cells | |
SG155915A1 (en) | A method of fabricating a thin film | |
JP2012517698A5 (en) | ||
EP2608280A3 (en) | Method for manufacturing a solar cell comprising ion implantation and selective activation of emitter regions via laser treatment | |
WO2009067353A3 (en) | Method to control cell adhesion and growth on biopolymer surfaces | |
WO2008096160A3 (en) | An article and a method of surface treatment of an article | |
JP2014518010A5 (en) | ||
WO2009030662A3 (en) | Process for obtaining a hybrid substrate comprising at least one layer of a nitrided material | |
TW200729289A (en) | Non-plasma method of removing photoresist from a substrate | |
EP1744357A3 (en) | Method for manufacturing SIMOX wafer and SIMOX wafer | |
KR880006132A (en) | Particle Manufacturing Method | |
TW200507076A (en) | Method for manufacturing semiconductor device | |
TW200623239A (en) | Method of growing a strained layer | |
JP2012507866A5 (en) | ||
WO2010051266A3 (en) | Improving the conformal doping in p3i chamber |