CN111244015B - Wafer bonding-releasing auxiliary carrier disc, bonding-releasing machine and bonding-releasing method - Google Patents
Wafer bonding-releasing auxiliary carrier disc, bonding-releasing machine and bonding-releasing method Download PDFInfo
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- CN111244015B CN111244015B CN202010066736.4A CN202010066736A CN111244015B CN 111244015 B CN111244015 B CN 111244015B CN 202010066736 A CN202010066736 A CN 202010066736A CN 111244015 B CN111244015 B CN 111244015B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/799—Apparatus for disconnecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/7999—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto for disconnecting
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Abstract
The invention relates to a wafer bonding-releasing auxiliary carrier disc, a bonding-releasing machine and a bonding-releasing method. The auxiliary bonding-releasing carrier disc comprises more than one layer of carrier sheets, wherein the carrier sheets are provided with gaps, the pore diameter of the lower carrier sheet is larger than that of the upper carrier sheet, each layer of carrier sheet can homogenize the vacuum suction force and the heat formed by the bonding-releasing machine layer by layer, the breaking rate of a wafer is greatly improved, and meanwhile, one bonding-releasing operation can be carried out only by replacing the upper carrier sheet polluted by bonding glue without replacing the lower carrier sheet. The wafer breaking device improves the breaking rate in the wafer unbinding process, reduces the cost of enterprises, improves the working efficiency, and has ingenious design, convenient operation, economy and practicability.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a wafer bonding-releasing auxiliary carrier disc, a bonding-releasing machine and a bonding-releasing method.
Background
The second-generation compound semiconductor device represented by gallium arsenide (GaAs) has advantages of high electron mobility, high operating frequency, wider temperature characteristics, better radiation resistance, and the like, compared with a silicon device. The special material properties make it irreplaceable in high frequency analog integrated circuits and is widely used in cell phones, power amplifier modules, low noise amplifiers LNAs (Low Noise Amplifiers), switches, broadband modulators (wideband modulators), optical networks, local area networks WLAN (wireless local area network), satellite communications (Satellite communication), automotive anti-collision radars (car radars) and wireless infrastructure (wireless infrastructure). Gallium arsenide devices and integrated circuit products (RFICs) currently occupy about 85% of the compound semiconductor market, and this trend will keep a high-speed growth with the advent of the 5G, IOT (internet of things) age, and various Radio Frequency Integrated Circuits (RFICs) manufactured by using gallium arsenide materials are being widely developed and applied.
The radio frequency power device has the advantages of high working current density, high heating and high requirement on heat dissipation, however, the thermal conductivity of gallium arsenide is only one third of that of a silicon material, and meanwhile, the thickness of the substrate is reduced, so that the impedance of the radio frequency device in high-frequency working can be reduced. After finishing the front-side process of the gallium arsenide wafer, the wafer with the thickness of 675+/-25 microns is thinned to the thickness of 25-1600 microns, and the method which is used in the industry is that the gallium arsenide wafer is stuck on a carrier (generally sapphire) by using an adhesive (glue or wax) for thinning, and after the thinning is finished, the thinned wafer is separated from the carrier by using a bonding-removing process.
The most common debonding processes are two:
1. dissolving the adhesive by using a chemical solvent heating method to realize separation;
2. and (3) performing de-bonding by utilizing thermal sliding stripping, fixing two sides of the wafer and the carrier by vacuum, softening the bonding material in the middle by heating, and horizontally pulling the sapphire wafer and the thinned GaAs wafer in opposite directions in the horizontal direction to achieve the final separation purpose of the wafer and the carrier.
Because the chemical solvent heating method has long time and low productivity, the thermal sliding method is generally adopted for bonding in industry.
Gallium arsenide has poor heat conducting performance and low mechanical strength. The thermal sliding de-bonding process directly transfers heat to bonding materials clamped in the middle through sapphire and gallium arsenide by a traditional mode of heating by a metal hot plate, so that the bonding materials reach liquefaction flow temperature at high temperature, and the sapphire and the gallium arsenide are separated through transverse sliding displacement force, and the process has the following defects:
1. the uneven heat conduction causes uneven liquefaction degree of bonding materials in the middle, and cracks are generated on the surface of the gallium arsenide wafer during subsequent sliding separation, so that mechanical damage and even stress breakage are caused.
2. The process window is narrow, the cleaning degree of the hot plate, the heating uniformity degree of bonding materials, the flatness of incoming materials of wafers and the like are very high, and slight hot plate contamination, particle problems and micro defects on the wafers can all lead to fragments in the gallium arsenide de-bonding process.
3. In the wafer unloading process, melted bonding glue or wax between the sapphire wafer and the GaAs wafer overflows from the edge, contaminates the hot plate and vacuum holes on the hot plate, and is difficult to clean and maintain.
How to reduce the breaking rate of the bonding becomes a troublesome problem facing each gallium arsenide wafer factory, and the reason is that the uniformity of the bonding temperature and the vacuum uniformity of the equipment cannot meet the requirements, so that the bonding process is sensitive to the uniformity of bonding glue, the concave-convex shape of the front device of the wafer and the particles on the surface.
The main flow of the bonding machine mainly adopts a stainless steel hot plate and is matched with a vacuum hole of 5 to 20. This design results in an insufficient uniformity of the vacuum distribution. In order to provide a channel for vacuum to flow between the wafer and the hot plate, the hot plate must also be constructed in a split design, which also results in heating uniformity that does not meet the requirement for reduced chipping rate. Meanwhile, the gallium arsenide wafer sheet with very low mechanical strength after separation is supported in a non-full area contact mode, so that the wafer sheet is weaker than the full area contact mode, and fragments are easily caused. The more expensive equipment adopts an integrated ceramic micropore carrier disc to further improve the uniformity of vacuum and box temperature, but the ceramic carrier disc has the defects of low heat transfer efficiency, and melted bonding glue overflowed in the process of unbinding can infiltrate into the ceramic carrier disc to block micropores in the carrier disc, so that the temperature and vacuum uniformity are damaged. The disassembly and cleaning of the carrying disc directly affect the productivity of the equipment, and the process cost is increased.
Disclosure of Invention
The invention aims to provide an auxiliary carrying disc capable of improving vacuum suction and heating uniformity of wafers to be bonded.
The wafer debonding auxiliary carrying disc has the same size as the wafer, is provided with holes, is arranged between the debonding carrying disc and the wafer to be debonded, and comprises more than one layer of carrying sheets.
Further, the auxiliary carrying disc comprises an upper layer carrying disc and a lower layer carrying disc which are mutually attached, the upper layer carrying disc is in contact with a wafer to be de-bonded, the lower layer carrying disc is in contact with the de-bonded carrying disc, the pore diameter of the upper layer carrying disc is smaller than that of the lower layer carrying disc, and the smoothness of the upper layer carrying disc is higher than that of the lower layer carrying disc.
Further, the pore diameter of the upper layer of the carrier sheet ranges from 10 to 25um, and the pore diameter of the lower layer of the carrier sheet ranges from 30 to 70um.
Further, the auxiliary carrying disc further comprises an intermediate layer carrying sheet, the intermediate layer carrying sheet is arranged between the upper layer carrying sheet and the lower layer carrying sheet, and pore diameters of the upper layer carrying sheet, the intermediate layer carrying sheet and the lower layer carrying sheet are sequentially increased.
Further, the auxiliary carrier plate is made of silicon carbide material.
In another aspect, the invention discloses a debonder comprising an auxiliary carrier tray as described in any one of the preceding claims.
In yet another aspect, the present disclosure provides a method of debonding, comprising:
s1, placing a wafer to be unbound on a unbound carrier plate, placing an auxiliary carrier plate at least between one surface of the wafer to be unbound and the unbound carrier plate, and sucking and heating the auxiliary carrier plate by vacuum;
s2, after the bonding glue in the middle of the wafer to be bonded is melted, the bonding slide of the wafer to be bonded is pulled by the upper carrying disc of the bonding machine to slide in the horizontal direction, the wafer is sucked by the lower carrying disc of the bonding machine to be kept still through the auxiliary carrying disc, and the bonding slide of the wafer to be bonded and the wafer are bonded;
s3, replacing or cleaning the auxiliary carrier disc, and repeating the steps S1 and S2.
Further, in the step S1, the auxiliary carrier tray is placed between the two surfaces of the wafer to be de-bonded and the de-bonding carrier tray.
Further, in the step S3, only the upper slide of the auxiliary tray is replaced or cleaned.
Further, the upper slide is reused after being washed by the solvent.
Compared with the prior art, the invention has the following advantages and effects:
1. the uniformity of heating and vacuum suction of the wafer is improved;
2. the breaking rate is reduced, and the yield is improved;
3. cost is saved;
4. simple structure and ingenious design.
Drawings
FIG. 1 is a prior art distribution of vacuum holes on a debonded carrier plate and structural design of a non-full area contact heating plate;
FIG. 2 is a schematic diagram of a thinned GaAs wafer and a sapphire bonding slide bonded together and placed on a bonding platen waiting Jie Jian;
FIG. 3 is a schematic diagram of the prior art bonding process with non-uniform vacuum suction and heating of the GaAs wafer surface;
FIG. 4 is a schematic illustration of the more uniform effect of vacuum suction and heating of the present invention;
FIG. 5 is a schematic view of the surface smoothness of the upper and lower carrier sheets of the auxiliary carrier tray of the present invention;
FIG. 6 is a schematic representation of the surface granularity and aperture size of the upper and lower slide of the auxiliary carrier plate in the optical microscope and the electron microscope;
fig. 7 is a schematic view showing the actual effect of the auxiliary carrier plate of the present invention.
FIG. 8 is a schematic diagram of the step of the debonding method of the present invention.
Description of the reference numerals:
10-debonding plate 101-vacuum holes 102-heating plate
20-wafer 201 to be unbuckled-wafer 202-bonding slide 203-bonding glue
30-auxiliary carrier plate 301-upper carrier plate 302-lower carrier plate.
Detailed Description
The present invention will be described in further detail by way of examples with reference to the accompanying drawings, which are illustrative of the present invention and not limited to the following examples.
As shown in fig. 1 and 3, the bonding machine in the prior art mainly adopts a stainless steel Jie Jian bonding machine carrier plate 10, is matched with vacuum holes 101 of 5 to 20, is provided with a structure of a plurality of raised heating plates 102 at the upper part, and places a wafer to be bonded on the bonding machine carrier plate 10 during bonding. This design results in insufficient uniformity of vacuum distribution, while allowing a channel for gas to flow between the wafer 20 to be debonded and the debonded carrier plate 10 during vacuum suction, and the carrier plate structure must also be designed in a split-type manner, which also results in heating uniformity that cannot meet the requirement for reducing the fragment rate. Further, the wafer sheet of gallium arsenide which is separated and has very low mechanical strength is supported by the non-full area contact mode, so that the wafer sheet is weaker than the full area contact mode, and the wafer sheet is easily broken.
As shown in FIG. 2, after the front side process is completed, the wafer with the thickness of 675+/-25 microns is thinned, the GaAs wafer is adhered to a bonding carrier by bonding glue (glue, wax or other adhesive), the bonding carrier is generally sapphire, then the thinning is carried out, and after the thinning is finished, the thinned wafer is separated from the bonding carrier by a de-bonding process.
The invention innovates the carrying disc, and an auxiliary carrying disc 30 is added between the debonding carrying disc 10 and the wafer 20 to be debonded for debonding, and the wafer sheet of gallium arsenide and the sapphire are successfully separated by high-temperature heating for separation, so that the breaking rate is reduced to below 1%.
As shown in fig. 4: the auxiliary carrying disc 30 of the invention can be a carrying disc with a hole, the size of the auxiliary carrying disc is the same as that of the wafer, the auxiliary carrying disc 30 is arranged between the debonding carrying disc 10 and the wafer 20 to be debonded, the auxiliary carrying disc 30 can be arranged on the upper surface and the lower surface of the wafer 20 to be debonded, the thinned wafer in the wafer to be debonded is thin and brittle, the wafer is broken due to slight change of heating and vacuum uniformity, the bonding carrying disc is generally made of sapphire, the sapphire carrying disc is firm and has no risk of breaking, the auxiliary carrying disc 30 is preferably required between one side of the wafer 20 to be debonded and the debonded carrying disc 10, and the debonding effect of the auxiliary carrying disc 30 is better on one side of the sapphire 20 to be debonded. After the debonding platen 10 is heated, heat is conducted to the wafer 20 to be debonded through the auxiliary platen 30, and the wafer 20 to be debonded is heated more uniformly due to the overall contact. The vacuum suction generated by the bonding machine is also conducted to the wafer 20 to be bonded through the auxiliary carrying disc 30, and the wafer to be bonded can be sucked more stably because more holes are arranged on the auxiliary carrying disc 30, so that the vacuum suction is more uniform. Furthermore, the auxiliary carrier plate 30 realizes more effective full-area contact with the wafer to be bonded, so that the risk of high breaking rate generated in the transverse pulling process due to non-full-area contact between the bonding-releasing carrier plate and the wafer to be bonded in the bonding-releasing process caused by the split design of the bonding-releasing carrier plate is further reduced.
In order to better improve the uniformity of heating and vacuum suction of the wafer 20 to be debonded, the auxiliary carrying disc 30 can be designed to comprise a plurality of layers of carrying discs, preferably a 2-layer carrying disc is designed, the 2-layer carrying disc is an upper-layer carrying disc 301 and a lower-layer carrying disc 302, the upper-layer carrying disc 301 is contacted with the wafer 20 to be debonded, the lower-layer carrying disc 302 is contacted with the debonded carrying disc 10, the pore diameters of the upper-layer carrying disc 301 and the lower-layer carrying disc are different, the pore diameter of the upper-layer carrying disc 301 is smaller than that of the lower-layer carrying disc 302, the pore diameter of the lower-layer carrying disc 302 is larger, the air permeability is higher, and the vacuum suction and the heating heat transferred by the debonded carrying disc 20 are homogenized in the first step by the lower-layer carrying disc 302; the upper slide 301 has smaller pore diameter and lower air permeability, and the heat and vacuum suction transferred by the lower slide 302 are secondarily homogenized by using the small pore diameter, so that the uniformity of the heat and vacuum suction finally transferred to the wafer 20 to be bonded is maximized. Because the surface smoothness of the upper carrier 301 is high, local cracking of the wafer caused by uneven stress can be further reduced, and damage to the back surface of the wafer can be avoided.
The auxiliary carrying disc can adjust the vacuum suction value formed by the debonding machine by designing the porosity of the two-layer carrier, so as to control the vacuum suction value born by the wafer, and the debonding machine in the prior art can only control the vacuum suction value through equipment. The selection and collocation of pore size of two-layer slide glass requires strict experimental design to obtain optimal combination.
The material of the auxiliary carrier plate 30 of the present invention is preferably a silicon carbide material because silicon carbide has a high thermal conductivity (490W/m-K), has good thermal stability, is wear-resistant and corrosion-resistant, and is lightweight, and the process temperature and vacuum uniformity can be improved with silicon carbide.
As shown in fig. 5 and 6, the pore diameter of the lower slide is 30-70um, the pore diameter of the upper slide is 10-25um, the smoothness of the upper slide is higher than that of the lower slide, the upper slide and the lower slide can be processed by adopting silicon carbide materials with different particle sizes, and the particle sizes of the silicon carbide materials can influence the smoothness and the pore diameter of the upper slide and the lower slide. The invention can improve and reduce the wafer slice debonding breaking rate to 1% by the auxiliary debonding process of the upper and lower carrier sheets mutually matched, while the breaking rate of the traditional process is 5-10%. Compared with a direct and wafer contact structure of a debonding carrier disc in the traditional debonding process, the superposition of the two layers of silicon carbide slides improves the uniformity of temperature and vacuum suction in the debonding process, and reduces local cracking of the wafer caused by uneven stress.
In addition, the micro pore diameter of the upper slide 301 can effectively adsorb bonding glue melted and overflowed on the back surface of the wafer in the bonding process, so that the breakage caused by the adhesion of the back surface of the wafer in the bonding process is reduced. And after the bonding is released, the upper-layer slide can be directly replaced and cleaned, the lower-layer slide does not need to be replaced, the operation difficulty is reduced, and the productivity of bonding-releasing equipment is protected. The contaminated upper slide can be used again after being soaked in acetone, the cleaning is simple, and no special fixture is needed.
The auxiliary carrying disc can also comprise more than three layers of carrying discs, and the pore diameters of the carrying discs at each layer of carrying discs in the direction from the debonding carrying disc to the wafer are sequentially reduced, so that multiple channels of heat and vacuum suction can be homogenized.
Fig. 7 shows a schematic view of the practical effect of the present invention.
Besides being directly manufactured into an auxiliary carrier disc and used in a traditional debonding machine, the carrier disc can be directly manufactured in the debonding machine by modifying traditional debonding equipment.
The following describes the method of debonding according to the present invention in detail with reference to fig. 8:
as shown in fig. 8, the present invention includes the steps of:
s1, placing a wafer to be unbound on a unbound carrier plate, placing an auxiliary carrier plate at least between one surface of the wafer to be unbound and the unbound carrier plate, and sucking and heating the auxiliary carrier plate by vacuum;
s2, after the bonding glue in the middle of the wafer to be bonded is melted, the bonding slide of the wafer to be bonded is pulled by the upper carrying disc of the bonding machine to slide in the horizontal direction, the wafer is sucked by the lower carrying disc of the bonding machine to be kept still through the auxiliary carrying disc, and the bonding slide of the wafer to be bonded and the wafer are bonded;
s3, replacing or cleaning the auxiliary carrier disc, and repeating the steps S1 and S2.
The wafer to be unbound is placed on the unbound carrier plate, the auxiliary carrier plate is placed at least between one side of the wafer to be unbound and the unbound carrier plate, because the thinned wafer is thin and fragile and is easy to crack, the sapphire bonding carrier plate of the wafer to be unbound is firm and cannot crack, the auxiliary carrier plate is needed on one side of the wafer to be unbound, but the effect of using the auxiliary carrier plate on only one side is poor, so that the auxiliary carrier plate is preferably used on both sides, the air suction is performed after the wafer to be unbound is placed, and the bonding glue between the wafer and the sapphire is melted by vacuum suction and heating.
After the bonding glue is melted, the bonding slide of the wafer to be bonded is pulled by the upper carrying disc of the bonding machine to slide in the horizontal direction, the wafer is sucked by the lower carrying disc of the bonding machine through the auxiliary carrying disc to keep still, and the bonding slide of the wafer to be bonded and the wafer are bonded. The bonding adhesive melted into liquid state in the process of bonding is reserved between the sapphire slide and the gallium arsenide sheet in the separation process, flows into the upper slide, and can be continuously bonded by simply replacing the upper slide of the auxiliary carrying disc, namely the small-aperture silicon carbide slide, before bonding is performed next time without moving the lower slide. The replaced upper slide glass can be cleaned by solvents such as acetone and the like, and can be used continuously after cleaning. The convenient replacement of the upper slide glass is also an advantage brought by the structural design of the invention, reduces the cost and improves the efficiency.
In addition, the specific embodiments described in the present specification may differ in terms of parts, shapes of components, names, and the like. All equivalent or simple changes of the structure, characteristics and principle according to the inventive concept are included in the protection scope of the present invention. Those skilled in the art may make various modifications or additions to the described embodiments or substitutions in a similar manner without departing from the scope of the invention as defined in the accompanying claims.
Claims (7)
1. The wafer debonding auxiliary carrying disc is characterized in that the size of the auxiliary carrying disc is the same as that of a wafer, holes are formed in the auxiliary carrying disc, the auxiliary carrying disc is arranged between the debonding carrying disc and the wafer to be debonded and comprises more than one layer of carrying discs, the auxiliary carrying disc comprises an upper layer carrying disc and a lower layer carrying disc which are mutually attached, the upper layer carrying disc is in contact with the wafer to be debonded, the lower layer carrying disc is in contact with the debonded carrying disc, the hole diameter of the upper layer carrying disc is smaller than that of the lower layer carrying disc, the smoothness of the upper layer carrying disc is higher than that of the lower layer carrying disc, the hole diameter range of the upper layer carrying disc is 10-25um, the hole diameter range of the lower layer carrying disc is 30-70um, and the auxiliary carrying disc is made of silicon carbide materials.
2. The wafer debonding auxiliary carrier of claim 1, further comprising an intermediate layer carrier disposed between the upper layer carrier and the lower layer carrier, wherein the upper layer carrier, the intermediate layer carrier, and the lower layer carrier have sequentially increasing pore sizes.
3. A debonder, characterized in that it comprises an auxiliary carrier disc according to claim 1 or 2.
4. A method of debonding an auxiliary carrier disc according to claim 1 or 2, comprising the steps of:
s1, placing a wafer to be unbound on a unbound carrier plate, placing an auxiliary carrier plate at least between one surface of the wafer to be unbound and the unbound carrier plate, and sucking and heating the auxiliary carrier plate by vacuum;
s2, after the bonding glue in the middle of the wafer to be bonded is melted, the bonding slide of the wafer to be bonded is pulled by the upper carrying disc of the bonding machine to slide in the horizontal direction, the wafer is sucked by the lower carrying disc of the bonding machine to be kept still through the auxiliary carrying disc, and the bonding slide of the wafer to be bonded and the wafer are bonded;
s3, replacing or cleaning the auxiliary carrier disc, and repeating the steps S1 and S2.
5. The method according to claim 4, wherein in the step S1, the auxiliary carrier is disposed between the two surfaces of the wafer to be debonded and the debonded carrier.
6. A method of debonding according to claim 4 or 5, wherein in step S3, only the upper slide of the auxiliary carrier plate is replaced or cleaned.
7. The method of claim 6, wherein the top slide is reused after being washed with solvent.
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| CN202010066736.4A CN111244015B (en) | 2020-01-20 | 2020-01-20 | Wafer bonding-releasing auxiliary carrier disc, bonding-releasing machine and bonding-releasing method |
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| CN202010066736.4A CN111244015B (en) | 2020-01-20 | 2020-01-20 | Wafer bonding-releasing auxiliary carrier disc, bonding-releasing machine and bonding-releasing method |
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| CN108807233A (en) * | 2018-06-22 | 2018-11-13 | 浙江中纳晶微电子科技有限公司 | The workbench and clamping method of bonding are solved after sheet product bonding |
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| US6752703B2 (en) * | 2001-12-21 | 2004-06-22 | Lam Research Corporation | Chemical mechanical polishing apparatus and methods with porous vacuum chuck and perforated carrier film |
| JP2007158190A (en) * | 2005-12-07 | 2007-06-21 | Nikon Corp | Suction device, polishing device, semiconductor device manufacturing method, and semiconductor device manufactured by the method |
| WO2009013941A1 (en) * | 2007-07-23 | 2009-01-29 | Creative Technology Corporation | Substrate suction apparatus and method for manufacturing the same |
| JP2014506008A (en) * | 2010-12-29 | 2014-03-06 | ジーティーエイティー・コーポレーション | Method and apparatus for forming thin films |
| US20180281151A1 (en) * | 2017-03-30 | 2018-10-04 | Applied Materials, Inc. | Adhesive-less carriers for chemical mechanical polishing |
| CN109727903A (en) * | 2017-10-31 | 2019-05-07 | 上海微电子装备（集团）股份有限公司 | Absorbent module, bonding pad disassembling apparatus and method and semiconductor packaging system |
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