CN114823466A - Preparation method of semiconductor device - Google Patents
Preparation method of semiconductor device Download PDFInfo
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- CN114823466A CN114823466A CN202210331714.5A CN202210331714A CN114823466A CN 114823466 A CN114823466 A CN 114823466A CN 202210331714 A CN202210331714 A CN 202210331714A CN 114823466 A CN114823466 A CN 114823466A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 159
- 239000011521 glass Substances 0.000 claims abstract description 92
- 238000000034 method Methods 0.000 claims abstract description 70
- 238000005520 cutting process Methods 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000004642 Polyimide Substances 0.000 claims abstract description 16
- 229920001721 polyimide Polymers 0.000 claims abstract description 16
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 63
- 238000004519 manufacturing process Methods 0.000 claims description 41
- 239000012790 adhesive layer Substances 0.000 claims description 19
- 238000007789 sealing Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 6
- 229910052774 Proactinium Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68313—Auxiliary support including a cavity for storing a finished device, e.g. IC package, or a partly finished device, e.g. die, during manufacturing or mounting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a preparation method of a semiconductor device, which comprises the following steps: b100, bonding the SiC substrate after the preparation of the grid electrode and the dielectric layer to a glass carrier plate, and separating and taking out the SiC substrate from the Si-based carrier plate; b200, carrying out metal coating after thinning treatment on the back of the SiC substrate; b300, placing the SiC substrate after the metal coating in a glass carrying disc, and bonding the SiC substrate and the glass carrying disc in a debonding way; b400, preparing a front device and a polyimide layer on the SiC substrate; b500, cutting the SiC substrate by taking the gap of the polyimide layer as a cutting street; and B600, transferring the cut SiC substrate from the glass carrying disc to a cutting die frame. According to the invention, the front-stage preparation process is carried out by the Si-based carrying disc with the preset size, the processing equipment with the size of the existing semiconductor device can be fully utilized, and the equipment replacement cost is reduced. Moreover, the method relates to the transfer bonding of the SiC substrate from the Si-based carrier plate to the glass carrier plate and the transfer of the SiC substrate from the glass carrier plate to the glass carrier plate, thereby ensuring the smooth proceeding of the subsequent process.
Description
Technical Field
The invention relates to the technical field of wafer processing and preparation, in particular to a preparation method of a semiconductor device.
Background
In the process of manufacturing semiconductor devices, such as wafers, the wafers are thin and generally need to be processed under the support of a carrier plate or a tray. Most of the existing wafer preparation pipelines are single-size (such as 8 inches) wafer preparation pipelines and cannot adapt to wafers with other sizes (such as 6 inches). In addition, in the process of preparing the wafer, high temperature steps such as high temperature ion activation, trench oxidation and the like are involved, and different high temperature resistant requirements are provided for the carrier plate, the carrier disc and the sealing material, so that the problems cannot be effectively solved by the prior art.
Disclosure of Invention
The invention provides a method for manufacturing a semiconductor device, aiming at solving the technical problem of how to utilize the existing assembly line to finish the preparation of wafers with different sizes.
The preparation method of the semiconductor device according to the embodiment of the invention comprises the following steps:
b100, bonding the SiC substrate after the preparation of the grid electrode and the dielectric layer to a glass carrier plate, and separating and taking out the SiC substrate from the Si-based carrier plate;
b200, performing metal coating after the back surface of the SiC substrate is thinned;
b300, placing the SiC substrate subjected to metal coating in a glass carrying disc, and bonding the SiC substrate and the glass carrying disc in a debonding way;
b400, preparing a front device and a polyimide layer on the SiC substrate;
b500, cutting the SiC substrate by taking the gap of the polyimide layer as a cutting street;
and B600, transferring the cut SiC substrate from the glass carrying disc to a cutting die frame.
According to the preparation method of the semiconductor device, the front-stage preparation process is carried out through the Si-based carrying disc with the preset size, the processing equipment with the size of the existing semiconductor device can be fully utilized, and the equipment replacement cost is reduced. In addition, in the preparation process of the semiconductor device, when the back surface of the SiC substrate is thinned and the metal coating process is carried out, the SiC substrate is transferred and bonded to the glass carrier plate from the Si-based carrier plate, so that the thinning process and the metal coating process can be smoothly carried out. When the front device is prepared, the SiC substrate is transferred from the glass carrier plate to the glass carrier disc due to the high-temperature environment, so that the subsequent process is ensured to be smoothly carried out. The preparation method of the invention has convenient operation and reasonable flow.
According to some embodiments of the invention, separating the SiC substrate from the Si-based carrier disk comprises:
the polyimide for sealing is removed by etching or laser process.
In some embodiments of the present invention, in step B100, the SiC substrate is bonded to the glass carrier plate by means of an adhesive layer and a release layer.
According to some embodiments of the invention, bonding a SiC substrate to the glass carrier plate by an adhesive layer and a release layer comprises:
arranging an adhesion layer on the surface of the SiC substrate, arranging a release layer on the surface of the glass carrier plate, and bonding the SiC substrate and the glass carrier plate through the adhesion layer and the release layer;
or a release layer is arranged on the surface of the SiC substrate, an adhesion layer is arranged on the surface of the glass carrier plate, and the SiC substrate and the glass carrier plate are bonded through the release layer and the adhesion layer.
In some embodiments of the present invention, in step B300, the SiC substrate is debonded from the glass carrier using a laser process or an etching process.
According to some embodiments of the invention, performing front side device fabrication on the SiC substrate comprises:
and electroplating Ni, Pa and Au on the front surface of the SiC substrate.
In some embodiments of the invention, the process of dicing the SiC substrate comprises:
cutting the SiC substrate by adopting a plasma process;
and cutting the metal coating of the SiC substrate by adopting a laser process.
According to some embodiments of the invention, step B600 comprises:
b610, removing a sealing layer between the SiC substrate and the glass carrying plate;
and B620, placing the cutting mold frame on the front surface of the SiC substrate, turning over the cutting mold frame and the SiC substrate, and removing the glass carrier plate.
In some embodiments of the present invention, the SiC substrate is 6 inches in size and the Si-based carrier platter is 8 inches in size.
Drawings
Fig. 1 is a flow chart of a method of fabricating a semiconductor device according to an embodiment of the present invention;
FIG. 2 is a schematic view showing a process of transferring a SiC substrate from a Si-based carrier platter to a glass carrier plate in a manufacturing method of a semiconductor device according to an embodiment of the present invention;
FIG. 3 is a schematic view showing a process of transferring a SiC substrate from a Si-based carrier platter to a glass carrier plate in a manufacturing method of a semiconductor device according to an embodiment of the present invention;
fig. 4 is a schematic view of a process of transferring a SiC substrate from a Si-based carrier platter to a glass carrier plate in a manufacturing method of a semiconductor device according to an embodiment of the present invention;
fig. 5 is a schematic view after thinning of the SiC substrate in the manufacturing method of the semiconductor device according to the embodiment of the present invention;
FIG. 6 is a schematic view showing a process of performing metal plating after thinning treatment of the back surface of the SiC substrate in the method for manufacturing a semiconductor device according to the embodiment of the present invention;
fig. 7 is a schematic view showing a process of transferring a SiC substrate from a glass carrier plate to a glass carrier tray in the manufacturing method of a semiconductor device according to the embodiment of the present invention;
fig. 8 is a schematic view showing a process of transferring a SiC substrate from a glass carrier plate to a glass carrier tray in the manufacturing method of a semiconductor device according to the embodiment of the present invention;
fig. 9 is a schematic view after removing an adhesive layer on the surface of the SiC substrate in the manufacturing method of the semiconductor device according to the embodiment of the present invention;
fig. 10 is a schematic view showing a process of manufacturing a device on the front surface of a SiC substrate and a polyimide layer in the method of manufacturing a semiconductor device according to the embodiment of the present invention;
fig. 11 is a schematic view showing a process of manufacturing a device on the front surface of a SiC substrate and a polyimide layer in the method of manufacturing a semiconductor device according to the embodiment of the present invention;
fig. 12 is a schematic view of a SiC substrate dicing process in the manufacturing method of the semiconductor device according to the embodiment of the invention;
fig. 13 is a schematic view of a SiC substrate dicing process in the manufacturing method of the semiconductor device according to the embodiment of the invention;
fig. 14 is a schematic view showing a process of transferring a SiC substrate from a glass carrier tray to a cutting mold in the manufacturing method of a semiconductor device according to the embodiment of the present invention;
fig. 15 is a schematic view showing a process of transferring a SiC substrate from a glass carrier tray to a cutting mold in the manufacturing method of a semiconductor device according to the embodiment of the present invention;
fig. 16 is a schematic view showing a process of transferring a SiC substrate from a glass carrier tray to a cutting mold in the manufacturing method of a semiconductor device according to the embodiment of the present invention;
fig. 17 is a schematic view of a process of transferring a SiC substrate from a glass carrier tray to a cutting mold in the manufacturing method of a semiconductor device according to the embodiment of the present invention.
Reference numerals:
the SiC substrate 10, the metal coating 110, the ILD120, the metal block 130, the polyimide 140, the epitaxial layer 20, the Si-based carrier plate 30, the glass carrier plate 40, the adhesive layer 510, the release layer 520, the sealing layer 60, the cutting mold frame 70 and the glass carrier plate 80.
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined purposes, the present invention is described in detail below with reference to the accompanying drawings and preferred embodiments.
The description of the method flow in the present specification and the steps of the flow chart in the drawings of the present specification are not necessarily strictly performed by the step numbers, and the execution order of the method steps may be changed. Moreover, certain steps may be omitted, multiple steps may be combined into one step execution, and/or a step may be broken down into multiple step executions.
As shown in fig. 1, a method for manufacturing a semiconductor device according to an embodiment of the present invention includes:
b100, bonding the SiC substrate 10 with the prepared grid electrode and the dielectric layer to the glass carrier plate 40, and separating the SiC substrate 10 from the Si-based carrier plate 30;
as shown in figures 2-4 of the drawings,when the SiC substrate 10 is transferred, the SiC substrate 10 may be bonded to the glass carrier plate 40, and the sealing layer 60 that seals the SiC substrate 10 and the Si-based carrier plate 30 may be removed. The capping layer 60 may be CVD deposited SiO 2 Alternatively, SOG or polyimide, and plasma etching or laser process may be used to remove the sealing layer 60.
In some embodiments of the present invention, the SiC substrate 10 may be bonded to the glass carrier plate 40 through the adhesive layer 510 and the release layer 520. For example, an adhesive layer 510 may be provided on the surface of the SiC substrate 10, a release layer 520 may be provided on the surface of the glass carrier plate 40, and the SiC substrate 10 and the glass carrier plate 40 may be bonded through the adhesive layer 510 and the release layer 520.
Alternatively, the release layer 520 may be provided on the surface of the SiC substrate 10, the adhesive layer 510 may be provided on the surface of the glass carrier plate 40, and the SiC substrate 10 and the glass carrier plate 40 may be bonded to each other through the release layer 520 and the adhesive layer 510. Therefore, when the SiC substrate 10 and the glass carrier 40 are unbonded, the problem that the adhesive layer 510 adheres to one side of the SiC substrate 10, and stress and removal are difficult when debonding can be avoided.
B200, as shown in fig. 5 to 6, performing a metal plating film 110 after thinning the back surface of the SiC substrate 10;
note that the SiC substrate 10 placed on the Si-based carrier 30 cannot be subjected to the back surface thinning process. Therefore, the SiC substrate 10 needs to be transferred from the Si-based carrier plate 30 to be bonded to the glass carrier plate 40. For example, the SiC substrate 10 may be thinned by a grinding process, and after the SiC substrate 10 is thinned to a predetermined thickness, the metal plating film 110 is applied to the back surface of the SiC substrate 10.
B300, placing the SiC substrate 10 after the metal coating 110 in a glass carrying disc 80, and debonding the SiC substrate 10 and the glass carrying plate 40;
as shown in fig. 7 to 9, the SiC substrate 10 may be sealed and fixed in the glass carrier plate 80 by the sealing layer 60, and the SiC substrate 10 may be debonded from the glass carrier plate 40. For example, after the SiC substrate 10 and the glass carrier 40 are debonded by a laser process or an etching process, the adhesive layer 510 on the surface of the SiC substrate is removed by a solvent. After the SiC substrate 10 and the glass carrier plate 40 are debonded, the SiC substrate 10 may be sealed and fixed in the glass carrier plate 80 by the sealing layer 60.
B400, preparing a front device and a polyimide 140 layer on the SiC substrate 10;
according to some embodiments of the invention, front side device preparation of the SiC substrate 10 includes:
the front surface of the SiC substrate 10 is plated with Ni, Pa, and Au.
It should be noted that, when the front surface device manufacturing process is performed, a high temperature environment is involved, and the SiC substrate 10 is transferred from the glass carrier 40 to the glass carrier plate 80, so that damage to the release layer 520 and the adhesion layer 510 between the SiC substrate 10 and the glass carrier 40 due to high temperature can be avoided, and the glass carrier plate 80 can withstand high temperature.
B500, cutting the SiC substrate 10 by taking the gap of the polyimide 140 layer as a cutting street;
as shown in fig. 12 to 13, the process of cutting the SiC substrate 10 includes:
the SiC substrate 10 is cut by a plasma process, and the metal plating film 110 of the SiC substrate 10 is cut by a laser process.
It should be noted that the metal plating film 110 has a higher hardness than the SiC substrate 10, and therefore, when the cutting process is performed, the plasma cutting process is performed on the SiC substrate 10 portion, and the laser cutting process is performed on the metal plating film 110 portion.
B600, transferring the cut SiC substrate 10 from the glass carrier tray 80 to the cutting mold frame 70.
As shown in fig. 14 to 17, step B600 includes:
b610, removing the sealing layer 60 between the SiC substrate 10 and the glass carrier plate 40;
and B620, placing the cutting mold frame 70 on the front surface of the SiC substrate 10, turning over the cutting mold frame 70 and the SiC substrate 10, and removing the glass carrier plate 40.
In some embodiments of the present invention, the SiC substrate 10 has a size of 6 inches and the Si-based carrier plate 30 has a size of 8 inches. It should be noted that the existing semiconductor device fabrication line mainly aims at 8-inch device fabrication, and cannot be effectively utilized for 6-inch devices. If the processing equipment is directly replaced, the problem of high cost is caused. According to the preparation method of the invention, the 6-inch SiC substrate 10 is placed on the 8-inch Si-based carrier plate 30, so that the existing underwater processing equipment can be fully utilized, and the production cost of the semiconductor device is reduced.
According to the preparation method of the semiconductor device, the front-stage preparation process is carried out through the Si-based carrying disc 30 with the preset size, the processing equipment with the size of the existing semiconductor device can be fully utilized, and the equipment replacement cost is reduced. Moreover, in the manufacturing process of the semiconductor device, when the back surface of the SiC substrate 10 is thinned and the metal plating 110 process is performed, the SiC substrate 10 is transferred from the Si-based carrier 30 to be bonded to the glass carrier 40, so that the thinning process and the plating process are smoothly performed. When front-side device fabrication is involved, the SiC substrate 10 is transferred from the glass carrier plate 40 to the glass carrier tray 80 due to the high temperature environment involved, to ensure smooth performance of the subsequent processes. The preparation method of the invention has convenient operation and reasonable flow.
A method for manufacturing a semiconductor device according to the present invention will be described in detail below in one specific embodiment with reference to the accompanying drawings. It is to be understood that the following description is only exemplary in nature and should not be taken as a specific limitation on the invention.
As shown in fig. 1, a method for manufacturing a semiconductor device includes:
b100, transferring the SiC substrate 10 after the preparation of the grid electrode and the dielectric layer from the Si-based carrier plate 30 to the glass carrier plate 40;
the size of the SiC substrate 10 was 6 inches, and the size of the Si-based carrier 30 was 8 inches. As shown in fig. 2 to 4, when the SiC substrate 10 is transferred, the sealing layer 60 sealing the SiC substrate 10 and the Si-based carrier 30 may be removed first, and then the SiC substrate 10 may be bonded to the glass carrier plate 40 through the adhesive layer 510 and the release layer 520. The sealing layer 60 is SiO 2 SOG or polyimide 140, using plasma etching or laser process when removing the sealing layer 60.
For example, an adhesive layer 510 may be provided on the surface of the SiC substrate 10, a release layer 520 may be provided on the surface of the glass carrier plate 40, and the SiC substrate 10 and the glass carrier plate 40 may be bonded through the adhesive layer 510 and the release layer 520.
Alternatively, the release layer 520 may be provided on the surface of the SiC substrate 10, the adhesive layer 510 may be provided on the surface of the glass carrier plate 40, and the SiC substrate 10 and the glass carrier plate 40 may be bonded to each other through the release layer 520 and the adhesive layer 510. Therefore, when the SiC substrate 10 and the glass carrier plate 40 are bonded, the problem that the adhesive layer 510 is attached to one side of the SiC substrate 10, which causes bonding stress release and difficulty in cleaning can be avoided.
B200, thinning the back of the SiC substrate 10, and then carrying out metal plating 110;
for example, the SiC substrate 10 may be thinned by a grinding process, and after the SiC substrate 10 is thinned to a predetermined thickness, the metal plating film 110 is applied to the back surface of the SiC substrate 10.
B300, placing the SiC substrate 10 after the metal coating 110 in a glass carrying disc 80, and debonding the SiC substrate 10 and the glass carrying plate 40;
as shown in fig. 6 to 9, the SiC substrate 10 may be sealed and fixed in the glass carrier plate 80 by the sealing layer 60, and the SiC substrate 10 may be debonded from the glass carrier plate 40. For example, the SiC substrate 10 is debonded from the glass carrier plate 40 using a laser process or an etching process. After the SiC substrate 10 and the glass carrier plate 40 are debonded, the SiC substrate 10 may be sealed and fixed in the glass carrier plate 80 by the sealing layer 60.
B400, performing front side device and polyimide 140 layer preparation on the SiC substrate 10, including:
the front surface of the SiC substrate 10 is plated with Ni, Pa, and Au.
B500, as shown in fig. 12 to 14, dicing the SiC substrate 10 with the gap of the polyimide 140 layer as a dicing street, includes:
the SiC substrate 10 is cut by a plasma process, and the metal plating film 110 of the SiC substrate 10 is cut by a laser process.
It should be noted that the metal film has a higher hardness than the SiC substrate 10, and therefore, when the cutting process is performed, the plasma cutting process is performed on the SiC substrate 10 portion, and the laser cutting process is performed on the metal plating film 110 portion.
B600, transferring the cut SiC substrate 10 from the glass carrier tray 80 to the cutting mold frame 70.
As shown in fig. 15 to 17, step B600 includes:
b610, removing the sealing layer 60 between the SiC substrate 10 and the glass carrier plate 40;
and B620, placing the cutting mold frame 70 on the front surface of the SiC substrate 10, turning over the cutting mold frame 70 and the SiC substrate 10, and removing the glass carrier plate 40.
In summary, the present invention performs the front-end preparation process by using the Si-based carrier plate 30 with the predetermined size, so as to fully utilize the existing processing equipment with the size of the semiconductor device and reduce the equipment replacement cost. Moreover, in the semiconductor device manufacturing process, when the back surface thinning and metal plating 110 processes of the SiC substrate 10 are performed, the SiC substrate 10 is transfer-bonded from the Si-based carrier 30 to the glass carrier 40 for the thinning process and the plating process. When front-side device fabrication is involved, the SiC substrate 10 is transferred from the glass carrier plate 40 to the glass carrier tray 80 due to the high temperature environment involved, to ensure smooth performance of the subsequent processes. The preparation method of the invention has convenient operation and reasonable flow.
While the invention has been described in connection with specific embodiments thereof, it is to be understood that it is intended by the appended drawings and description that the invention may be embodied in other specific forms without departing from the spirit or scope of the invention.
Claims (8)
1. A method of manufacturing a semiconductor device, comprising:
b100, bonding the SiC substrate after the preparation of the grid electrode and the dielectric layer to a glass carrier plate, and separating and taking out the SiC substrate from the Si-based carrier plate;
b200, performing metal coating after the back surface of the SiC substrate is thinned;
b300, placing the SiC substrate subjected to metal coating in a glass carrying disc, and bonding the SiC substrate and the glass carrying disc in a dissolving way;
b400, preparing a front device and a polyimide layer on the SiC substrate;
b500, cutting the SiC substrate by taking the gap of the polyimide layer as a cutting street;
and B600, transferring the cut SiC substrate from the stripping carrying disc to a cutting die frame.
2. The method for manufacturing a semiconductor device according to claim 1, wherein the step B100 of separating and taking out the SiC substrate from the Si-based carrier tray includes:
the sealing layer for sealing is removed by etching or laser process.
3. The method for manufacturing a semiconductor device according to claim 1, wherein in step B100, the SiC substrate is bonded to the glass carrier plate through an adhesive layer and a release layer.
4. The method for manufacturing a semiconductor device according to claim 3, wherein bonding the SiC substrate to the glass carrier plate via an adhesive layer and a release layer comprises:
arranging an adhesion layer on the surface of the SiC substrate, arranging a release layer on the surface of the glass carrier plate, and bonding the SiC substrate and the glass carrier plate through the adhesion layer and the release layer;
or a release layer is arranged on the surface of the SiC substrate, an adhesion layer is arranged on the surface of the glass carrier plate, and the SiC substrate and the glass carrier plate are bonded through the release layer and the adhesion layer.
5. The method for manufacturing a semiconductor device according to claim 1, wherein in step B300, the SiC substrate is debonded from the glass carrier by a laser process or an etching process.
6. The method for manufacturing a semiconductor device according to claim 1, wherein the front surface device manufacturing of the SiC substrate includes:
and electroplating Ni, Pa and Au on the front surface of the SiC substrate.
7. The method for manufacturing a semiconductor device according to claim 1, wherein the process of cutting the SiC substrate includes:
cutting the SiC substrate by adopting a plasma process;
and cutting the metal coating of the SiC substrate by adopting a laser process.
8. The method for manufacturing a semiconductor device according to any one of claims 1 to 7, wherein the size of the SiC substrate is 6 inches, and the size of the Si-based carrier platter is 8 inches.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210331714.5A CN114823466A (en) | 2022-03-31 | 2022-03-31 | Preparation method of semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210331714.5A CN114823466A (en) | 2022-03-31 | 2022-03-31 | Preparation method of semiconductor device |
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| CN114823466A true CN114823466A (en) | 2022-07-29 |
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| CN202210331714.5A Pending CN114823466A (en) | 2022-03-31 | 2022-03-31 | Preparation method of semiconductor device |
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