CN114464544A - Preparation method of semiconductor device - Google Patents

Preparation method of semiconductor device Download PDF

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Publication number
CN114464544A
CN114464544A CN202210021764.3A CN202210021764A CN114464544A CN 114464544 A CN114464544 A CN 114464544A CN 202210021764 A CN202210021764 A CN 202210021764A CN 114464544 A CN114464544 A CN 114464544A
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China
Prior art keywords
wafer
semiconductor device
boat
manufacturing
cutting
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CN202210021764.3A
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Chinese (zh)
Inventor
严立巍
符德荣
陈政勋
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Shaoxing Tongxincheng Integrated Circuit Co ltd
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Shaoxing Tongxincheng Integrated Circuit Co ltd
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Application filed by Shaoxing Tongxincheng Integrated Circuit Co ltd filed Critical Shaoxing Tongxincheng Integrated Circuit Co ltd
Priority to CN202210021764.3A priority Critical patent/CN114464544A/en
Publication of CN114464544A publication Critical patent/CN114464544A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8334—Bonding interfaces of the layer connector
    • H01L2224/83359—Material

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention provides a preparation method of a semiconductor device, which comprises the following steps: removing polyimide for fixing the first carrier disc and the wafer; transferring the wafer from the first carrier plate to a second carrier plate; carrying out a metal coating process on the back of the wafer; attaching the back of the wafer to a cutting mold frame; and cutting the wafer on the front surface of the wafer by adopting etching and laser processes. According to the preparation method of the semiconductor device, the preparation process of the front surface element of the wafer can be completed in the first carrying disc, and then the wafer can be transferred to the second carrying disc to carry out the metal coating process on the back surface wafer. When the wafer is transferred to the second carrying disc, the polyimide layer on the front side of the wafer can play a role in buffering and protecting the wafer, the metal coating process on the back side of the wafer is completed under the support of the second carrying disc, then the back side of the wafer is attached to the cutting die frame, and cutting is performed from the front side of the wafer.

Description

Preparation method of semiconductor device
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation method of a semiconductor device.
Background
In the process of processing and preparing the wafer, the front side and the back side of the wafer relate to the processing of surface element devices, the wafer needs to be fixedly supported in the process of processing, and how to reasonably design the process of preparing the wafer influences the preparation efficiency and the processing quality of the wafer.
Disclosure of Invention
The invention provides a method for manufacturing a semiconductor device, aiming at solving the technical problem of improving the manufacturing efficiency and quality of a wafer.
The preparation method of the semiconductor device according to the embodiment of the invention comprises the following steps:
removing the polyimide used for fixing the first carrier disc and the wafer;
transferring the wafer from the first blade to a second blade;
carrying out a metal coating process on the back of the wafer;
attaching the back of the wafer to a cutting mold frame;
and cutting the wafer on the front surface of the wafer by adopting etching and laser processes.
According to the preparation method of the semiconductor device, the preparation process of the front surface element of the wafer can be completed in the first carrying disc, and then the wafer can be transferred to the second carrying disc, and the metal coating process is carried out on the back surface wafer. When the wafer is transferred to the second carrying disc, the polyimide layer on the front side of the wafer can play a role in buffering and protecting the wafer, the metal coating process on the back side of the wafer is completed under the support of the second carrying disc, then the back side of the wafer is attached to the cutting die frame, and cutting is performed from the front side of the wafer.
According to some embodiments of the present invention, removing the polyimide used for fixing the first boat and the wafer is specifically: the polyimide is removed by laser or plasma.
In some embodiments of the invention, transferring the wafer from the first blade to a second blade comprises:
buckling the second carrying disc above the first carrying disc;
turning over the buckled first carrying disc and the buckled second carrying disc to enable the wafer to be transferred to the second carrying disc under the action of gravity and polyimide adhesion force;
and removing the first loading disc.
According to some embodiments of the invention, the wafer completes a front side element preparation process before the wafer is transferred from the first blade to the second blade.
In some embodiments of the present invention, when performing a metal plating process on the back surface of the wafer, an annular limiting frame is used to define a region to be plated on the back surface of the wafer.
According to some embodiments of the present invention, the front surface of the wafer has scribe lines defined by the polyimide layer, and when the front surface of the wafer is diced by etching or laser process, the wafer is diced according to the scribe lines.
In some embodiments of the present invention, dicing the wafer using an etching and laser process on the front side of the wafer comprises:
cutting the interlayer medium and the silicon-based main body of the wafer by adopting an etching process;
and cutting the metal coating by adopting a laser process.
According to some embodiments of the invention, the metal plating film is a composite metal layer composed of at least one or more of titanium, nickel vanadium alloy and silver.
In some embodiments of the invention, the bottom of the first and second boat discs are provided with through holes.
According to some embodiments of the invention, the method of preparing further comprises:
and packaging the cut wafer.
Drawings
Fig. 1 is a schematic flow chart of a method for manufacturing a semiconductor device according to an embodiment of the present invention;
FIG. 2 is a schematic view of a wafer finished front side element processing in a method of fabricating a semiconductor device according to an embodiment of the present invention;
FIG. 3 is a schematic view of the polyimide removed from the first boat and the wafer during the fabrication of the semiconductor device according to the embodiment of the present invention;
FIG. 4 is a schematic view illustrating a second boat being fastened to a top of a first boat in a method for manufacturing a semiconductor device according to an embodiment of the invention;
fig. 5 is a schematic view illustrating a process of removing a first boat by flipping in a manufacturing method of a semiconductor device according to an embodiment of the present invention;
FIG. 6 is a schematic view illustrating a wafer backside having a metal coating formed thereon according to a method for manufacturing a semiconductor device of an embodiment of the present invention;
FIG. 7 is a schematic view illustrating a back surface of a wafer attached to a dicing mold in a method for manufacturing a semiconductor device according to an embodiment of the present invention;
fig. 8 is a schematic view illustrating a second boat being removed in a manufacturing method of a semiconductor device according to an embodiment of the present invention;
FIG. 9 is a schematic view of a silicon-based body of a wafer and an interlayer dielectric cut by an etching process in a method of fabricating a semiconductor device according to an embodiment of the present invention;
fig. 10 is a schematic view illustrating a process of cutting the metal plating film using a laser process in the method of manufacturing a semiconductor device according to the embodiment of the present invention.
Reference numerals:
a wafer 10, a front surface 110, a back surface 120, a polyimide layer 101, an interlayer dielectric 102, a metal block 103, a metal layer 104, a scribe line S1, a metal plating film 105, a sealing region S2,
the first blade 210, the second blade 220,
the mold frame 30 is cut.
Detailed Description
To further explain the technical means and effects of the present invention adopted to achieve the intended purpose, the present invention will be described in detail with reference to the accompanying drawings and preferred embodiments.
The description of the method flow in the present specification and the steps of the flow chart in the drawings of the present specification are not necessarily strictly performed by the step numbers, and the execution order of the method steps may be changed. Moreover, certain steps may be omitted, multiple steps may be combined into one step execution, and/or a step may be broken down into multiple step executions.
As shown in fig. 1, a method for manufacturing a semiconductor device according to an embodiment of the present invention includes:
s100, removing polyimide used for fixing the first carrier disc and the wafer;
it should be noted that, as shown in fig. 2, before the polyimide used for fixing the first carrier plate 210 and the wafer 10 is removed, the preparation of the components on the front surface 110 of the wafer 10, including the preparation of the interlayer dielectric 102(ILD), the metal blocks 103, the metal layer 104 and the polyimide layer 101, may be completed.
S200, transferring the wafer from the first carrying disc to the second carrying disc;
s300, performing a metal coating process on the back of the wafer;
s400, attaching the back of the wafer to a cutting mold frame;
and S500, cutting the wafer on the front surface of the wafer by adopting an etching and laser process.
According to the method for manufacturing the semiconductor device of the embodiment of the invention, the manufacturing process of the front surface 110 of the wafer 10 can be completed in the first blade 210, and then the wafer 10 can be transferred to the second blade 220, and the metal plating 105 process can be performed on the wafer 10 on the back surface 120. When the wafer 10 is transferred to the second carrier plate 220, the polyimide layer 101 on the front surface 110 of the wafer 10 can play a role in buffering and protecting the wafer 10, the metal plating 105 process on the back surface 120 of the wafer 10 is completed under the support of the second carrier plate 220, then the back surface 120 of the wafer 10 is attached to the cutting mold frame 30, and cutting is performed from the front surface 110 of the wafer 10, so that the preparation method is reasonable and efficient, and the preparation efficiency and the processing quality of the wafer 10 are improved.
According to some embodiments of the present invention, in step S100, the step of removing the polyimide for fixing the first boat and the wafer is as follows: the polyimide is removed by laser or plasma. That is, the polyimide may be removed by laser, or may be removed by a plasma solvent. As shown in fig. 2 and 3, when removing the polyimide, only the polyimide in the sealing region S2 between the wafer 10 and the first blade 210 is removed.
In some embodiments of the present invention, as shown in fig. 4-5, the transferring the wafer from the first blade to the second blade in step S200 includes:
s210, buckling the second carrying disc above the first carrying disc;
s220, turning over the buckled first carrying disc and the second carrying disc to enable the wafer to be transferred to the second carrying disc under the action of gravity and the polyimide adhesive force;
it should be noted that the polyimide layer 101 on the front surface 110 of the wafer 10 can serve as a buffer for protecting the wafer 10 when the first blade 210 and the second blade 220 are flipped over, and the polyimide layer 101 has a certain adhesion force, so that the wafer 10 can be conveniently transferred from the first blade 210 to the second blade 220 under the action of gravity of the wafer 10.
And S230, removing the first carrying tray.
According to some embodiments of the present invention, as shown in fig. 1, the wafer 10 completes the process of preparing the front side 110 elements before the wafer 10 is transferred from the first blade 210 to the second blade 220. Thus, after the wafer 10 is transferred to the second boat 220, the metal plating 105 may be applied to only the back surface 120 of the wafer 10.
In some embodiments of the present invention, when the back surface 120 of the wafer 10 is subjected to the metal plating 105 process, the annular limiting frame is used to define the region to be plated on the back surface 120 of the wafer 10.
It should be noted that, as shown in fig. 5-6, when performing the metal plating 105 on the back surface 120 of the wafer 10, the metal plating 105 only needs to cover the region to be plated on the back surface 120 of the wafer 10, and in order to avoid the metal plating 105 from being plated on the second carrier plate 220 and the gap region between the wafer 10 and the second carrier plate 220, an annular limiting frame may be used to cover the top of the back surface 120 of the wafer 10, so as to define the region to be plated on the back surface 120 of the wafer 10, and avoid the metal plating 105 from being plated on other positions.
According to some embodiments of the present invention, as shown in fig. 8-10, the front surface 110 of the wafer 10 has scribe lines S1 defined by the polyimide layer 101, and when the front surface 110 of the wafer 10 is diced by etching and laser processes, the wafer 10 is diced according to the scribe lines S1. Thereby, dicing of the wafer 10 is facilitated.
In some embodiments of the present invention, in step S500, the wafer 10 is diced by using an etching and laser process on the front surface 110 of the wafer 10, including:
s510, cutting the interlayer medium and the silicon-based main body of the wafer by adopting an etching process;
and S520, cutting the metal coating by adopting a laser process.
According to some embodiments of the present invention, the metal plating film 105 is a composite metal layer composed of at least one or more of titanium, nickel vanadium alloy, and silver.
In some embodiments of the present invention, as shown in FIG. 4, the bottom of the first blade tray 210 and the second blade tray 220 are provided with through holes.
Note that through holes are provided at the bottom of the first blade 210 and the second blade 220. When the wafer 10 is transferred to the first blade 210 or the second blade 220, the gas between the wafer 10 and the bottom wall of the first blade 210 or the second blade 220 can be exhausted through the through holes, so that the wafer 10 can be transferred and attached to the first blade 210 or the second blade 220. Moreover, when the wafer 10 is transferred from the second blade 220 to the cutting mold frame 30, the gas can enter the gap between the second blade 220 and the wafer 10 from the through hole, so that the wafer 10 can be lifted from the bottom of the second blade 220, and the convenience of transferring the wafer 10 from the second blade 220 to the cutting mold frame 30 is improved.
In addition, it should be noted that the cutting die frame 30 has a support film with good flexibility, and a support frame is provided on the outer circumference of the support film. The cutting mold frame 30 has good supporting performance for the wafer 10, but the cutting mold frame 30 cannot withstand high temperature environment and vacuum equipment. Therefore, when the front-end process of the wafer 10 preparation involves processes such as high-temperature activation of ions, a carrier plate is used to support the wafer 10. After the activation of the high-temperature ions is completed, the wafer 10 may be transferred to a carrier tray for subsequent process preparation, and finally transferred to the cutting mold frame 30, so as to complete the preparation of the wafer 10.
According to some embodiments of the invention, the method of preparing further comprises:
s600, packaging the cut wafer.
A method for manufacturing a semiconductor device according to the present invention will be described in detail below in one specific embodiment with reference to the accompanying drawings. It is to be understood that the following description is only exemplary in nature and should not be taken as a specific limitation on the invention.
As shown in fig. 1, a method for manufacturing a semiconductor device includes:
s100, removing polyimide used for fixing the first carrier disc and the wafer;
it should be noted that, as shown in fig. 2, before the polyimide used for fixing the first carrier plate 210 and the wafer 10 is removed, the preparation of the components on the front surface 110 of the wafer 10, including the preparation of the interlayer dielectric 102(ILD), the metal blocks 103, the metal layer 104 and the polyimide layer 101, may be completed.
In step S100, removing the polyimide used for fixing the first boat 210 and the wafer 10 specifically includes: the polyimide is removed by laser or plasma. That is, the polyimide may be removed by laser, or may be removed by a plasma solvent. As shown in fig. 2 and 3, when removing the polyimide, only the polyimide in the sealing region S2 between the wafer 10 and the first blade 210 is removed.
S200, transferring the wafer from the first carrier disc to the second carrier disc, wherein the transferring comprises the following steps:
as shown in fig. 4, the bottom portions of the first and second boat 210 and 220 are provided with through holes. Thereby facilitating attachment of the wafer 10 to the bottom walls of the first blade 210 and the second blade 220. As shown in fig. 4 to 5, step S200 includes:
s210, buckling the second carrying disc above the first carrying disc;
s220, turning over the buckled first carrying disc and the second carrying disc to enable the wafer to be transferred to the second carrying disc under the action of gravity and the polyimide adhesive force;
and S230, removing the first carrying tray.
It should be noted that the polyimide layer 101 on the front surface 110 of the wafer 10 can serve as a buffer for protecting the wafer 10 when the first blade 210 and the second blade 220 are flipped over, and the polyimide layer 101 has a certain adhesion force, so that the wafer 10 can be conveniently transferred from the first blade 210 to the second blade 220 under the action of gravity of the wafer 10.
S300, performing a metal coating process on the back of the wafer;
when the back surface 120 of the wafer 10 is subjected to the metal plating 105 process, the annular limiting frame is used for limiting the area to be plated of the back surface 120 of the wafer 10.
It should be noted that, as shown in fig. 5-6, when performing the metal plating 105 on the back surface 120 of the wafer 10, the metal plating 105 only needs to cover the region to be plated on the back surface 120 of the wafer 10, and in order to avoid the metal plating 105 from being plated on the second carrier plate 220 and the gap region between the wafer 10 and the second carrier plate 220, an annular limiting frame may be used to cover the top of the back surface 120 of the wafer 10, so as to define the region to be plated on the back surface 120 of the wafer 10, and avoid the metal plating 105 from being plated on other positions. The metal plating film 105 is a composite metal layer composed of at least one or more of titanium, nickel vanadium alloy, and silver.
S400, attaching the back of the wafer to a cutting mold frame;
s500, cutting the wafer on the front side of the wafer by adopting etching and laser processes;
as shown in fig. 8-10, the front surface 110 of the wafer 10 has scribe lines S1 defined by the polyimide layer 101, and when the front surface 110 of the wafer 10 is diced using etching and laser processes to dice the wafer 10, the dicing of the wafer 10 is performed according to the scribe lines S1. Thereby, dicing of the wafer 10 is facilitated.
In step S500, the wafer is cut on the front surface of the wafer by using etching and laser processes, including:
s510, cutting an interlayer dielectric (ILD) and a silicon-based main body of the wafer by adopting an etching process;
and S520, cutting the metal coating by adopting a laser process.
S600, packaging the cut wafer.
According to the method for manufacturing the semiconductor device of the embodiment of the invention, the manufacturing process of the front surface 110 of the wafer 10 can be completed in the first blade 210, and then the wafer 10 can be transferred to the second blade 220, and the metal plating 105 process can be performed on the wafer 10 on the back surface 120. When the wafer 10 is transferred to the second carrier plate 220, the polyimide layer 101 on the front surface 110 of the wafer 10 can play a role in buffering and protecting the wafer 10, the metal plating 105 process on the back surface 120 of the wafer 10 is completed under the support of the second carrier plate 220, then the back surface 120 of the wafer 10 is attached to the cutting mold frame 30, and cutting is performed from the front surface 110 of the wafer 10, so that the preparation method is reasonable and efficient, and the preparation efficiency and the processing quality of the wafer 10 are improved.
While the invention has been described in connection with specific embodiments thereof, it is to be understood that it is intended by the appended drawings and description that the invention may be embodied in other specific forms without departing from the spirit or scope of the invention.

Claims (10)

1. A method of manufacturing a semiconductor device, comprising:
removing the polyimide used for fixing the first carrier disc and the wafer;
transferring the wafer from the first blade to a second blade;
carrying out a metal coating process on the back of the wafer;
attaching the back of the wafer to a cutting mold frame;
and cutting the wafer on the front surface of the wafer by adopting etching and laser processes.
2. The method of claim 1, wherein removing the polyimide used to secure the first boat and the wafer comprises: the polyimide is removed by laser or plasma.
3. The method of claim 1, wherein transferring the wafer from the first boat to a second boat comprises:
buckling the second carrying disc above the first carrying disc;
turning over the buckled first carrying disc and the buckled second carrying disc to enable the wafer to be transferred to the second carrying disc under the action of gravity and polyimide adhesion force;
and removing the first loading disc.
4. A method of manufacturing a semiconductor device according to claim 1, wherein the wafer completes a front side element manufacturing process before the wafer is transferred from the first boat to the second boat.
5. The method of manufacturing a semiconductor device according to claim 1, wherein an annular position-limiting frame is used to define a region to be plated on the back surface of the wafer when the back surface of the wafer is subjected to the metal plating process.
6. The method as claimed in claim 1, wherein the front surface of the wafer has scribe lines defined by the polyimide layer, and when the front surface of the wafer is diced by etching or laser process, the wafer is diced according to the scribe lines.
7. The method of claim 1, wherein the dicing the wafer using the etching and laser process on the front side of the wafer comprises:
cutting the interlayer medium and the silicon-based main body of the wafer by adopting an etching process;
and cutting the metal coating by adopting a laser process.
8. The method for manufacturing a semiconductor device according to claim 1, wherein the metal plating film is a composite metal layer composed of at least one or more of titanium, a nickel-vanadium alloy, and silver.
9. The manufacturing method of the semiconductor device according to claim 1, wherein the bottom portions of the first boat and the second boat are provided with through holes.
10. The method for manufacturing a semiconductor device according to claim 1, further comprising:
and packaging the cut wafer.
CN202210021764.3A 2022-01-10 2022-01-10 Preparation method of semiconductor device Pending CN114464544A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210021764.3A CN114464544A (en) 2022-01-10 2022-01-10 Preparation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210021764.3A CN114464544A (en) 2022-01-10 2022-01-10 Preparation method of semiconductor device

Publications (1)

Publication Number Publication Date
CN114464544A true CN114464544A (en) 2022-05-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210021764.3A Pending CN114464544A (en) 2022-01-10 2022-01-10 Preparation method of semiconductor device

Country Status (1)

Country Link
CN (1) CN114464544A (en)

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