JP2004241568A - Substrate attachment/detachment device, substrate attachment/detachment method, and substrate treatment system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate attachment/detachment device capable of preventing the generation of stagnant air in a process of bonding a thin semiconductor wafer to its supporting substrate, and to provide a substrate attachment/detachment method and a substrate treatment system. <P>SOLUTION: The semiconductor wafer attachment/detachment device 10 has a ring-shape main body 14 facing a semiconductor wafer 13 bonded to a disciform supporting disk 11, suction ports 15 arranged on the surface of the main body 14 facing the semiconductor wafer 13, and a piston 16 arranged on the central axis of the main body 14. For bonding the semiconductor wafer 13 to the supporting disk 11, the suction ports 15 vacuum-suck the vicinity of the periphery of the semiconductor wafer 13 and the piston 16 applies pressure to the middle part of the semiconductor wafer 13, and this deforms the semiconductor wafer 13 into a convex facing the supporting disk 11. The semiconductor wafer 13 as convexed is brought into contact with an adhesive sheet 12 and the main body 14 is moved relative to the piston 16 toward the supporting disk 11, and this allows the semiconductor wafer 13 to closely adhere to the adhesive sheet 12. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate detaching apparatus, a substrate detaching method, and a substrate processing system, and more particularly, to a substrate detaching apparatus, a substrate detaching method, and a substrate processing system for detaching a thin semiconductor wafer from a supporting base.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, as a demand for miniaturization of a device using an integrated circuit having a semiconductor chip has increased, there has been a demand for miniaturization and thinning of a semiconductor chip. In particular, since it is expected that a laminated chip in which semiconductor chips are laminated in a plurality of layers will become the mainstream of integrated circuits, thinning of semiconductor chips is strongly required. The thickness of the semiconductor chip constituting the laminated chip is currently required to be about 200 μm, and is expected to be about 100 μm in the near future.
[0003]
On the other hand, the thickness of a φ6 inch or φ8 inch semiconductor wafer is mainly about 750 μm, and the semiconductor wafer is subjected to turning processing to be described later in order to meet the above-described demand for thinning.
[0004]
FIG. 17 is a process diagram showing a conventional manufacturing process for manufacturing a thin semiconductor chip from a semiconductor wafer.
[0005]
In FIG. 17, first, a semiconductor wafer having a thickness of about 750 μm is prepared (FIG. 17A), impurities are introduced into one surface of the semiconductor wafer by ion implantation, a thin film is formed by a CVD method, and a pattern is formed by dry etching. A semiconductor element forming step of forming a semiconductor element is performed through the step (FIG. 17B), and the surface (surface) on which the semiconductor element is formed is attached to a protective substrate via an adhesive sheet (FIG. 17C). Next, the opposite surface (back surface) of the semiconductor wafer on which the semiconductor elements are formed is turned by turning to adjust the thickness of the semiconductor wafer to approximately 200 μm (FIG. 17D).
[0006]
Thereafter, dicing is performed to cut the semiconductor wafer into semiconductor chips while the semiconductor wafer is adhered to the protective substrate (FIG. 17E), and the semiconductor chips individually cut by dicing are connected to other components of the integrated circuit. (FIG. 17F).
[0007]
However, in the above-described manufacturing process, since the back surface of the semiconductor wafer is turned while the semiconductor wafer is adhered to the protection substrate, there is a problem that a crack or a chip occurs due to a misalignment of the semiconductor wafer during the turning process. .
[0008]
Therefore, a thin semiconductor chip manufacturing process for performing only a semiconductor element forming process, dicing and packaging on a semiconductor wafer having a thickness of about 200 μm and a diameter of φ6 inches or φ8 inches for the purpose of omitting the above-mentioned turning is known. Have been. In this manufacturing process, a supporting base having a predetermined rigidity is attached to the back surface of the semiconductor wafer via an adhesive sheet in order to prevent the semiconductor wafer from being deformed during handling due to the low rigidity of the semiconductor wafer.
[0009]
Since there is no document describing the technology relating to the attachment of the semiconductor wafer to the protective substrate or the supporting substrate, the technology relating to the attachment of the semiconductor wafer to the protective substrate or the supporting substrate is known in the literature. It does not relate to the invention.
[0010]
[Problems to be solved by the invention]
However, in a thin semiconductor chip manufacturing process using a semiconductor wafer having a thickness of approximately 200 μm from the beginning, a substrate processing apparatus for introducing impurities, forming a thin film, and forming a pattern in a semiconductor element forming process may be different. It is necessary to attach and detach a semiconductor wafer to and from a supporting base suitable for a substrate processing apparatus corresponding to each process. This attachment and detachment are performed manually by an operator. In particular, when attaching, the first contact point of the semiconductor wafer with the support base may not be the center of the semiconductor wafer. There is a problem that air accumulation occurs between the semiconductor wafer and the semiconductor wafer.
[0011]
An object of the present invention is to provide a substrate detaching apparatus, a substrate detaching method, and a substrate processing system which prevent generation of air stagnation when attaching a thin semiconductor wafer to a supporting base.
[0012]
[Means for Solving the Problems]
In order to achieve the above object, the substrate detaching apparatus according to claim 1, further comprising an adsorbing means for adsorbing one surface of the plate-like substrate, attaching the substrate to a supporting substrate, or attaching the substrate to the supporting substrate. A substrate removing device for separating the substrate from the substrate, comprising a pressing means for pressing a central portion of the substrate from the one surface in a direction related to the other surface, wherein the suction means is disposed at a position corresponding to a vicinity of an outer edge of the substrate. It is characterized by the following.
[0013]
According to the first aspect of the present invention, there is provided a substrate attaching / detaching apparatus, comprising: pressing means for pressing the central portion of the substrate from one surface to the direction relating to the other surface, and the suction means is disposed at a position corresponding to the vicinity of the outer edge of the substrate. Therefore, at the time of attaching the substrate to the supporting base, the center of the substrate can first contact the supporting base, and the occurrence of air pockets between the supporting base and the semiconductor wafer can be prevented. . Furthermore, when the substrate is separated from the supporting base, the substrate can be separated from the outer edge of the substrate, so that generation of a local load can be prevented, and thus, cracking or chipping of the semiconductor wafer can be prevented.
[0014]
According to a second aspect of the present invention, there is provided the substrate removing apparatus according to the first aspect, further comprising an adhesive material disposed between the substrate and the supporting base, the bonding material being phase-changed depending on a temperature, and a lower part of the supporting base. And a base provided with a temperature control device for adjusting the temperature of the adhesive material.
[0015]
According to the substrate attaching / detaching apparatus of the second aspect, since the temperature control device adjusts the temperature of the phase-changeable adhesive material provided between the substrate and the supporting base, the temperature of the substrate and the supporting base adhered to each other is adjusted. After it is confirmed that no air pockets are generated between the adhesive material, the adhesive material can be solidified, thereby reliably preventing the air pool from being generated between the substrate and the supporting base, and After the is liquefied, the substrate can be peeled off from the support base, thereby facilitating the peeling of the substrate from the support base.
[0016]
According to a third aspect of the present invention, there is provided the substrate removing apparatus according to the first or second aspect, wherein the substrate has a convex shape with respect to a direction from the one surface to the other surface.
[0017]
According to the substrate attaching / detaching apparatus according to the third aspect, since the substrate has a convex shape with respect to the direction from one surface to the other surface, when the substrate is attached to the supporting base, the center portion of the substrate surely comes first. Therefore, it is possible to reliably prevent the air pool from being generated between the support base and the semiconductor wafer.
[0018]
A substrate detaching apparatus according to claim 4, wherein the substrate detaching apparatus according to any one of claims 1 to 3, which is disposed outside an outer edge of the substrate, and is provided between the support base and the substrate. It is characterized by comprising discharge means for discharging the fluid.
[0019]
According to the substrate attaching / detaching apparatus according to the fourth aspect, since the discharging means is provided outside the outer edge of the substrate and discharges the fluid between the supporting substrate and the substrate, the substrate is detached from the supporting substrate. In this case, the substrate can be reliably peeled off from the outer edge of the substrate, thereby preventing the occurrence of a local load. As a result, the occurrence of cracks and chips in the semiconductor wafer can be reliably prevented.
[0020]
According to a fifth aspect of the present invention, in the substrate attaching / detaching apparatus according to any one of the first to fourth aspects, the adsorbing unit adsorbs a plurality of locations near the outer edge.
[0021]
According to the substrate attaching / detaching apparatus according to claim 5, the adsorbing means adsorbs a plurality of locations near the outer edge, so that when the substrate is attached to the supporting base, the substrate can exhibit a convex shape stably, The outer edge of the substrate can be prevented from first contacting the supporting substrate. As a result, it is possible to more reliably prevent air from being trapped between the supporting substrate and the semiconductor wafer.
[0022]
According to a sixth aspect of the present invention, there is provided a substrate removing apparatus according to any one of the first to fifth aspects, wherein the suction unit vacuum-adsorbs the substrate.
[0023]
According to the substrate attaching / detaching apparatus according to the sixth aspect, since the suction means vacuum-adsorbs the substrate, the substrate can be stably held.
[0024]
In order to achieve the above object, a substrate attaching / detaching method according to claim 7, wherein the substrate has a suction step of adsorbing one surface of a plate-shaped substrate and a sticking step of sticking the substrate to a support base. The desorption method includes a pressing step of pressing a central portion of the substrate from the one surface in a direction related to the other surface, and the suction step includes suctioning a portion near an outer edge of the substrate.
[0025]
According to the substrate attaching / detaching method according to the seventh aspect, the central portion of the substrate is pressed from one surface to the direction related to the other surface, and the vicinity of the outer edge of the substrate is sucked, so that the substrate can be attached to the supporting base. In addition, the center of the substrate can first contact the support base, and the occurrence of air pockets between the support base and the semiconductor wafer can be prevented.
[0026]
According to a eighth aspect of the present invention, in the method of attaching and detaching a substrate according to the seventh aspect, a temperature adjusting step of adjusting a temperature of the adhesive material that changes phase according to a temperature disposed between the substrate and the supporting base is provided. It is characterized by having.
[0027]
According to the substrate attaching / detaching method according to claim 8, since the temperature of the adhesive material that changes in phase depending on the temperature provided between the substrate and the support base is adjusted, the substrate and the support base adhered to each other are adjusted. After it is confirmed that no air pocket is generated, the adhesive material can be solidified, and thus it is possible to reliably prevent the generation of the air pool between the substrate and the supporting base.
[0028]
The method for attaching and detaching a substrate according to claim 9 is a method for attaching and detaching a substrate, comprising: an adsorbing step of adsorbing one surface of a plate-shaped substrate; and a detaching step of detaching the substrate from a supporting substrate. A pressing step of applying a pressing force from the one surface to the other surface in the portion, and the suction step includes suctioning a portion near an outer edge of the substrate.
[0029]
According to the substrate attaching / detaching method according to the ninth aspect, the central portion of the substrate is pressed from one surface to the direction related to the other surface, and the vicinity of the outer edge of the substrate is adsorbed. It can be peeled off from the outer edge of the substrate, thereby preventing the occurrence of a local load. This can prevent the semiconductor wafer from cracking or chipping.
[0030]
According to a tenth aspect of the present invention, there is provided the substrate attaching / detaching method according to the ninth aspect, further comprising a temperature control step of adjusting a temperature of the adhesive material that changes in phase depending on a temperature provided between the substrate and the supporting base. It is characterized by having.
[0031]
According to the method of attaching and detaching a substrate according to claim 10, since the temperature of the adhesive material that changes phase according to the temperature disposed between the substrate and the support substrate is adjusted, the substrate is supported after the adhesive material is liquefied. From the supporting base, thereby facilitating the separation of the substrate from the supporting base.
[0032]
The method for attaching and detaching a substrate according to claim 11, wherein the method for attaching and detaching a substrate according to claim 9, further comprising: a deforming step of deforming the substrate from the one surface to a convex shape with respect to a direction related to the other surface. Is characterized by maintaining the convex shape.
[0033]
According to the substrate attaching / detaching method according to claim 11, the substrate is deformed from one surface to a convex shape with respect to the direction related to the other surface, and the convex shape is maintained. Can be peeled off at the end, so that generation of a local load can be reliably prevented. As a result, the occurrence of cracks and chips in the semiconductor wafer can be reliably prevented.
[0034]
The method of attaching and detaching a substrate according to claim 12, wherein in the method of attaching and detaching a substrate according to claim 9 or 10, the method further comprises a deformation step of deforming the substrate from the one surface to a convex shape in a direction related to the other surface. Then, the pressing force is removed.
[0035]
According to the substrate attaching / detaching method according to the twelfth aspect, since the substrate is deformed from one surface to a convex shape with respect to the direction related to the other surface and the pressing force is removed, the substrate is supported using the reaction force of the substrate. , And the occurrence of a local load can be reliably prevented. As a result, the occurrence of cracks and chips in the semiconductor wafer can be reliably prevented.
[0036]
According to a thirteenth aspect of the present invention, there is provided the substrate attaching / detaching method according to any one of the ninth to twelfth aspects, wherein the fluid is ejected between the supporting base and the substrate from outside the outer edge of the substrate. It has a discharging step.
[0037]
According to the substrate attaching / detaching method according to the thirteenth aspect, since the fluid is discharged between the support base and the substrate from outside the outer edge of the substrate, when the substrate is separated from the support base, the outer edge of the substrate is first placed. Peeling can be performed, so that generation of a local load can be more reliably prevented. This makes it possible to more reliably prevent the semiconductor wafer from being cracked or chipped.
[0038]
According to a fourteenth aspect of the present invention, there is provided the substrate attaching / detaching method according to any one of the seventh to thirteenth aspects, wherein the adsorbing step adsorbs a plurality of locations near the outer edge.
[0039]
According to the substrate attaching / detaching method according to the fourteenth aspect, since a plurality of locations in the vicinity of the outer edge are sucked, the substrate can stably exhibit a convex shape when the substrate is attached to the supporting base, and the outer edge of the substrate can be stably exhibited. Can be prevented from coming into contact with the supporting substrate first, and when the substrate is separated from the supporting substrate, the outer edge of the substrate can be surely peeled off first, thereby generating a local load. Can be more reliably prevented.
[0040]
According to a fifteenth aspect of the present invention, in the method of any one of the seventh to fourteenth aspects, the substrate is vacuum-adsorbed in the adsorption step.
[0041]
According to the substrate attaching / detaching method according to the fifteenth aspect, the substrate is vacuum-adsorbed, so that the substrate can be stably held.
[0042]
In order to achieve the above object, a substrate processing system according to a sixteenth aspect is provided with the substrate removing device according to any one of the first to fifth aspects.
[0043]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, the semiconductor wafer attaching / detaching apparatus according to the first embodiment of the present invention will be described in detail.
[0044]
FIG. 1 is a perspective view showing a schematic configuration of a semiconductor wafer attaching / detaching apparatus according to a first embodiment of the present invention.
[0045]
In FIG. 1, a semiconductor wafer attaching / detaching apparatus 10 includes a ring-shaped main body 14 opposed to a semiconductor wafer 13 attached to a disc-shaped supporting disk 11 via an adhesive sheet 12 made of a liquid or gel adhesive, Eight suction ports 15 disposed on the surface of the main body 14 facing the semiconductor wafer 13, a piston 16 disposed on the central axis of the main body 14, and disposed outside the support disk 11. And four gas nozzles 17.
[0046]
The semiconductor wafer 13 has a thickness of approximately 200 μm and a diameter of φ6 inches or φ8 inches. Although the diameter of the supporting disk 11 may be larger than the diameter of the semiconductor wafer 13, it is particularly preferably the same as the diameter of the semiconductor wafer 13 in consideration of easiness of transportation in the substrate processing apparatus 41 described later. Further, the main body 14 of the semiconductor wafer attaching / detaching apparatus 10 is vertically movable in the drawing, and when the main body 14 comes into contact with the semiconductor wafer 13, the suction port 15 is evacuated between the suction port 15 and the semiconductor wafer 13. By generating a state, the semiconductor wafer 13 is suctioned by vacuum. The piston 16 is included in a cylindrical guide 18 disposed along the center axis at the center of the main body 14 (FIG. 2), and is movable vertically along the guide 18 in the drawing. When the suction port 15 sucks the semiconductor wafer 13 in a vacuum, the suction port 15 protrudes downward in the drawing to press the central portion of the semiconductor wafer 13. Further, the piston 16 has a coating made of a buffer or the like at an end portion that comes into contact with the semiconductor wafer 13 to prevent direct contact between the metal forming the piston 16 and the semiconductor wafer 13.
[0047]
The four gas nozzles 17 are disposed around the support disk 11 at 90 ° intervals around the center of the support disk 11, and the height positions of the gas nozzles 17 in the semiconductor wafer attaching / detaching apparatus 10 are determined by the adhesive sheet 12 and the semiconductor wafer. Thirteen boundaries. Each of the gas nozzles 17 discharges a gas between the semiconductor wafer 13 and the adhesive sheet 12 when the semiconductor wafer 13 is separated from the adhesive sheet 12 or the like.
The eight suction ports 15 are arranged at 45 ° intervals around the center of the main body 14, and vacuum-suction near the outer edge of the semiconductor wafer 13 (FIG. 3).
[0048]
FIG. 4 is a diagram showing a schematic configuration of a substrate processing system in which the semiconductor wafer attaching / detaching apparatus 10 is used.
[0049]
In FIG. 4, the substrate processing system 40 includes one semiconductor wafer detaching apparatus 10 and two substrate processing apparatuses 41. In each of the substrate processing apparatuses 41, a wafer cassette 46 described later is connected to the semiconductor wafer detaching apparatus 10. They are arranged to face each other.
[0050]
The substrate processing apparatus 41 includes a processing chamber 42 for performing desired processing such as impurity introduction into the semiconductor wafer 13 by ion implantation, thin film formation by a CVD method, and pattern formation by dry etching, and a semiconductor wafer 13 in the processing chamber 42. A load / lock chamber 44 containing a transfer arm 43 for transferring the wafer, three wafer cassettes 46 accommodating a carrier box (not shown) for storing 25 semiconductor wafers 13 corresponding to one lot, and a semiconductor wafer 13. And a transfer chamber 48, which is a rectangular common transfer path.
[0051]
The two load lock chambers 44, the three wafer cassettes 46, and the orienter 47 are connected to the transfer chamber 48, and each of the load lock chambers 44 faces each of the wafer cassettes 46 via the transfer chamber 48. The orienter 47 is disposed at one end of the transfer chamber 48 in the longitudinal direction.
[0052]
The transfer chamber 48 has therein a transfer arm mechanism 49 for loading and unloading the semiconductor wafer 13 between the connected load / lock chamber 44, the wafer cassette 46, and the orienter 47. The transfer arm mechanism 49 includes a transfer chamber. 48 is movable with respect to its longitudinal direction.
[0053]
When the processing of the semiconductor wafer 13 is performed in the substrate processing apparatus 41, the transfer arm mechanism 49 takes out one semiconductor wafer 13 from the wafer cassette 46, carries the semiconductor wafer 13 into the orienter 47, and pre-aligns the semiconductor wafer 13 with the orienter 47. 13 is carried into the load / lock chamber 44 while being gripped. Next, the transfer arm 43 receives the loaded semiconductor wafer 13 and loads it into the processing chamber 42. The processing chamber 42 performs the desired processing on the loaded semiconductor wafer 13, and the transfer arm 43 performs the desired processing. The loaded semiconductor wafer 13 is carried out to the load / lock chamber 44, and the semiconductor wafer 13 is transferred to the transfer arm mechanism 49. The transfer arm mechanism 49 that has received the semiconductor wafer 13 carries the semiconductor wafer 13 into the wafer cassette 46.
[0054]
As described above, since the semiconductor wafer 13 frequently moves between the components of the substrate processing apparatus 41, the semiconductor wafer 13 is moved to a predetermined position via the adhesive sheet for the purpose of facilitating handling during the movement. It is necessary to adhere to the rigid support disk 11.
[0055]
At this time, the specifications of the components of the substrate processing apparatus 41 may change depending on the type of processing performed in the processing chamber 42. For example, in the substrate processing apparatus 41 for performing thin film formation and the substrate processing apparatus 41 for performing pattern formation, the transfer arm 43 and the transfer arm mechanism 49 may have different specifications. Therefore, it is necessary to use a support disk 11 that is suitable for each substrate processing apparatus 41. Therefore, after the semiconductor wafer 13 is processed in one substrate processing apparatus 41 and before it is carried into another substrate processing apparatus 41, the supporting disk 11 to be stuck is separated by the semiconductor wafer attaching / detaching apparatus 10 into another. It is necessary to change it to one suitable for the substrate processing apparatus 41. The transfer of the semiconductor wafer 13 between the substrate processing apparatus 41 and the semiconductor wafer attaching / detaching apparatus 10 is performed manually by an operator, but may be performed by an automatic transfer path or the like.
[0056]
Next, a method for manufacturing semiconductor chips from the semiconductor wafer 13 using the above-described substrate processing system 40 will be described with reference to the drawings.
[0057]
FIG. 5 is a process chart showing a manufacturing process for manufacturing semiconductor chips from the semiconductor wafer 13.
[0058]
In FIG. 5, first, a semiconductor wafer 13 having a thickness of approximately 200 μm is prepared (FIG. 5A), and the semiconductor wafer 13 is adhered to the support disk 11 via the adhesive sheet 12 by an attaching process described later. (FIG. 5 (b)). Thereafter, a semiconductor element forming step of forming semiconductor elements by introducing impurities by ion implantation, forming a thin film by CVD, and forming a pattern by dry etching is performed on the surface of the semiconductor wafer 13 on which the support disk 11 is not stuck. Thus, a semiconductor element is formed (FIG. 5C).
[0059]
Next, while the semiconductor wafer 13 is adhered to the support disk 11, dicing is performed to cut the semiconductor wafer 13 into semiconductor chips (FIG. 5D), and the semiconductor chips individually cut by dicing are separated into other integrated circuits. Packaging for connecting to the components is performed (FIG. 5E).
[0060]
At this time, as described above, since it is necessary to change the supporting disk 11 suitable for the substrate processing apparatus 41 corresponding to each processing in the semiconductor element forming process to the semiconductor wafer 13, the supporting disk 11 of the semiconductor wafer 13 is changed to the supporting disk 11. It is necessary to repeat sticking and peeling.
[0061]
Specifically, as shown in FIG. 6, a semiconductor wafer 13 that has been subjected to one process is prepared (FIG. 6A), and the semiconductor wafer 13 is attached to the semiconductor wafer 13 through the adhesive sheet 12 by an attaching process described later. Affixing to a supporting disk 11 compatible with the substrate processing apparatus 41 corresponding to the desired processing (FIG. 6B). Thereafter, the semiconductor wafer 13 to which the support disk 11 is adhered is carried into the substrate processing apparatus 41, and a desired process, for example, a dry etching process is performed on the semiconductor wafer 13 by the processing chamber 42 (FIG. 6C). After the semiconductor wafer 13 is carried out of the substrate processing apparatus 41, the semiconductor wafer 13 is separated from the supporting disk 11 by a peeling process described later.
[0062]
Next, the sticking process of sticking the semiconductor wafer 13 to the supporting disk 11 and the peeling process of peeling the semiconductor wafer 13 from the supporting disk 11 in the semiconductor wafer removing apparatus 10 will be described with reference to the drawings.
[0063]
FIG. 7 is a process diagram showing an attaching process in the semiconductor wafer attaching / detaching apparatus according to the first embodiment of the present invention.
[0064]
First, the semiconductor wafer attaching / detaching apparatus 10 vacuum-adsorbs the vicinity of the outer edge of the semiconductor wafer 13 by the suction port 15 and presses the central portion of the semiconductor wafer 13 by the piston 16 so that the semiconductor wafer 13 faces the support disk 11. It is deformed into a convex shape (FIG. 7A).
[0065]
Then, the semiconductor wafer attaching / detaching device 10 makes the semiconductor wafer 13 come into contact with the adhesive sheet 12 while deforming the semiconductor wafer 13 into a convex shape (FIG. 7B). The semiconductor wafer 13 is brought into close contact with the pressure-sensitive adhesive sheet 12 by being moved toward 11 (FIG. 7C). Thereafter, the semiconductor wafer attaching / detaching apparatus 10 moves upward and separates from the semiconductor wafer 13 (FIG. 7D).
[0066]
According to the attaching process of FIG. 7, the semiconductor wafer attaching / detaching apparatus 10 presses the central portion of the semiconductor wafer 13 toward the support disk 11, and vacuum-adsorbs the vicinity of the outer edge of the semiconductor wafer 13. When the semiconductor wafer 13 is attached to the support disk 11, the center of the semiconductor wafer 13 can first come into contact with the support disk 11, and the generation of air pockets between the support disk 11 and the semiconductor wafer 13 is prevented. Can be prevented.
[0067]
FIG. 8 is a process diagram showing a peeling process in the semiconductor wafer attaching / detaching apparatus according to the first embodiment of the present invention.
[0068]
First, the semiconductor wafer attaching / detaching device 10 vacuum-adsorbs the vicinity of the outer edge of the semiconductor wafer 13 by the suction port 15 and presses the center of the semiconductor wafer 13 by the piston 16 (FIG. 8A). The semiconductor wafer 13 is deformed into a convex shape facing the support disk 11 by ejecting gas toward the center of the support disk 11 and moving the main body 14 relatively upward with respect to the piston 16 ( FIG. 8 (b).
[0069]
Then, the semiconductor wafer attaching / detaching apparatus 10 peels the semiconductor wafer 13 from the adhesive sheet 12 while deforming the semiconductor wafer 13 into a convex shape (FIG. 8C), and moves the piston 16 relatively upward with respect to the main body 14. Thus, the load pressing the central portion of the semiconductor wafer 13 is removed to restore the semiconductor wafer 13 to a flat plate shape (FIG. 8D).
[0070]
According to the peeling process shown in FIG. 8, the semiconductor wafer attaching / detaching apparatus 10 presses the central portion of the semiconductor wafer 13 toward the support disk 11 and vacuum-adsorbs the vicinity of the outer edge of the semiconductor wafer 13. When the semiconductor wafer 13 is separated from the supporting disk 11, the semiconductor wafer 13 can be separated from the outer edge of the semiconductor wafer 13 and deformed into a convex shape toward the supporting disk 11 and the convex shape is maintained. When the semiconductor wafer 13 is peeled off from the supporting disk 11, the central portion of the semiconductor wafer 13 can be finally peeled off, so that the occurrence of a local load can be reliably prevented. As a result, the occurrence of cracks and chips in the semiconductor wafer can be reliably prevented.
[0071]
Next, a semiconductor wafer attaching / detaching apparatus according to a second embodiment of the present invention will be described in detail.
[0072]
The semiconductor wafer attaching / detaching apparatus according to the second embodiment is basically the same in configuration and operation as the semiconductor wafer attaching / detaching apparatus according to the above-described first embodiment, and differs only in the peeling process of the semiconductor wafer 13. Therefore, the peeling process will be described.
[0073]
FIG. 9 is a process chart showing a peeling process in the semiconductor wafer attaching / detaching apparatus according to the second embodiment.
[0074]
First, the semiconductor wafer attaching / detaching apparatus 10 vacuum-adsorbs the vicinity of the outer edge of the semiconductor wafer 13 by the suction port 15 and presses the center of the semiconductor wafer 13 by the piston 16 (FIG. 9A). The semiconductor wafer 13 is deformed into a convex shape facing the support disk 11 by ejecting gas toward the center of the support disk 11 and moving the main body 14 relatively upward with respect to the piston 16 ( FIG. 9 (b).
[0075]
Then, the semiconductor wafer attaching / detaching apparatus 10 removes the load pressing the central portion of the semiconductor wafer 13 by moving the piston 16 relatively upward with respect to the main body 14 (FIG. 9C), and reduces the load. The central portion of the removed semiconductor wafer 13 is separated from the adhesive sheet 12 by a spring force, and the semiconductor wafer 13 is restored to a flat plate shape (FIG. 9D).
[0076]
According to the peeling process of FIG. 9, the semiconductor wafer 13 is deformed into a convex shape toward the support disk 11 and the pressing force is removed, so that the semiconductor wafer 13 is moved by using the spring force of the semiconductor wafer 13. 11 can be surely prevented from generating a local load. As a result, the occurrence of cracks and chips in the semiconductor wafer can be reliably prevented.
[0077]
According to the peeling process of FIG. 8 and the peeling process of FIG. 9, the semiconductor wafer attaching / detaching device 10 ejects gas between the supporting disk 11 and the semiconductor wafer 13 from outside the outer edge of the semiconductor wafer 13, When the semiconductor wafer 13 is separated from the support disk 11, the outer edge of the semiconductor wafer 13 can be reliably separated first, and in addition, particles and the like attached to the semiconductor wafer 13 can be removed.
[0078]
According to the sticking process of FIG. 7, the peeling process of FIG. 8, and the peeling process of FIG. 9, the semiconductor wafer removing device 10 vacuum-adsorbs a plurality of locations near the outer edge of the semiconductor wafer 13, so that the semiconductor wafer 13 A convex shape can be stably exhibited.
[0079]
Further, according to the sticking process in FIG. 7, the peeling process in FIG. 8, and the peeling process in FIG. 9, the semiconductor wafer attaching / detaching device 10 vacuum-adsorbs the semiconductor wafer 13, so that the semiconductor wafer 13 can be stably held. it can.
[0080]
Although the above-described substrate processing system 40 is configured by one semiconductor wafer desorption apparatus 10 and two substrate processing apparatuses 41, the numbers of the semiconductor wafer desorption apparatuses 10 and the substrate processing apparatuses 41 are not limited thereto. It may be appropriately changed depending on the type of processing performed on the semiconductor wafer. Further, in the substrate processing system 40, the semiconductor wafer desorption device 10 and the substrate processing device 41 are provided separately, but the semiconductor wafer desorption device 10 and the substrate processing device 41 may be provided integrally, At this time, it is preferable that the semiconductor wafer attaching / detaching apparatus 10 is connected to the transfer chamber 48 at an end opposite to the one end to which the orienter 47 is connected. Thereby, the size of the substrate processing system 40 can be reduced, and the time for exposing the semiconductor wafer 13 to the outside air can be reduced, so that adhesion of particles and the like to the semiconductor wafer 13 can be prevented.
[0081]
Further, in the substrate processing system 40, as described above, since the attachment and detachment of the semiconductor wafer 13 to and from the support disk 11 are repeated, the semiconductor wafer removal / attachment apparatus 10 adjusts the relative position of the semiconductor wafer 13 to the support disk 11. It is preferable to provide an alignment mechanism. As the alignment mechanism, an image processing apparatus measures the deviation of the relative position of the semiconductor wafer 13 on the support disk 11, and corrects the deviation based on the result. A jig for holding a semiconductor wafer 13 and having a pin having a shape adapted to a slot provided in the support disk 11, wherein the jig is used by the pin when the jig is adapted to the support disk 11. Of the semiconductor wafer 13 with respect to the supporting disk 11 is regulated. Jig for adjusting the relative position is more preferred.
[0082]
In the above-described semiconductor wafer attaching / detaching apparatus 10, the semiconductor wafer 13 is adhered to the support disk 11 via the adhesive sheet 12, but the semiconductor wafer 13 may be directly adhered to the support disk 11, Adhesion of dust to the semiconductor wafer 13 due to tearing of the adhesive sheet 12 or the like can be prevented. At this time, the surface of the support disk 11 that contacts the semiconductor wafer 13 is preferably mirror-finished, so that the semiconductor wafer 13 can be firmly adhered to the support disk 11.
[0083]
The number of the suction ports 15 in the semiconductor wafer desorption apparatus 10 is eight, and the eight suction ports 15 vacuum-suction the outer edge of the semiconductor wafer 13. However, the number of the suction ports 15 is not limited to this, and for example, Or two. At this time, the two suction ports 15 are arranged symmetrically with respect to the center of the main body 14. Thereby, the semiconductor wafer 13 can be stably sucked.
[0084]
The amount of deformation when the semiconductor wafer attaching / detaching apparatus 10 deforms the semiconductor wafer 13 into a convex shape is preferably within a range in which a stress falling within the elastic range of the material of the semiconductor wafer 13 is generated. In No. 13, the protrusion amount of the convex shape is preferably about 1 mm.
[0085]
The support disk 11 in the semiconductor wafer detaching apparatus 10 is not limited to a disk shape, and may be, for example, a rectangular shape, and may be made of any of conductor, semiconductor, and non-conductor.
[0086]
The suction port 15 in the semiconductor wafer desorption apparatus 10 vacuum-suctions the semiconductor wafer 13, but preferably easily switches ON / OFF of the suction of the semiconductor wafer 13. For example, even if the suction hole 15 utilizes electrostatic suction. Good.
[0087]
The gas nozzle 17 in the semiconductor wafer desorption apparatus 10 ejects gas, but other fluids can be used, and for example, purified water may be ejected.
[0088]
The substrate processed by the substrate processing system 40 is not limited to the semiconductor wafer 13, and may be, for example, a disk made of glass.
[0089]
Further, a semiconductor wafer attaching / detaching apparatus according to a third embodiment of the present invention will be described in detail.
[0090]
The configuration and operation of the semiconductor wafer desorption apparatus according to the third embodiment are basically the same as those of the semiconductor wafer desorption apparatus according to the above-described first embodiment, and only different configurations and operations will be described. .
[0091]
FIG. 10 is a sectional view showing a schematic configuration of a semiconductor wafer attaching / detaching apparatus according to the third embodiment.
[0092]
In FIG. 10, a semiconductor wafer attaching / detaching apparatus 100 includes a base 102 having a temperature control device 101 made of a heating wire therein, a support disk 103 mounted on the base 102, and a support disk 103 mounted on the base 102. The temperature controller 101 adjusts the temperature of the adhesive sheet 104 to a desired value via the support disk 103 based on the current value applied to the power supply 105. I do. Generally, a liquid crystal material has a property that a chain hydrocarbon is a main component and becomes a liquid in a high temperature range and becomes a crystal in a low temperature range. Therefore, by adjusting the temperature of the pressure-sensitive adhesive sheet 104, the pressure-sensitive adhesive sheet 104 can be changed to a desired state, whereby the semiconductor wafer 13 is attached to the supporting disk 103 and peeled off from the supporting disk 103. Can be easily performed.
[0093]
FIG. 11 is a plan view of a base 102 having the temperature control device 101 in FIG. 10 therein.
[0094]
In FIG. 11, a temperature control device 101 includes a plurality of heating wires 110 radially arranged from the center of a base 102. Thereby, the temperature controller 101 can uniformly adjust the temperature of the entire surface of the adhesive sheet 104 via the support disk 103.
[0095]
The configuration of the semiconductor wafer removal apparatus 100 other than the base 102 having the above-mentioned temperature control device 101, the support disk 103, and the adhesive sheet 104 is the same as the configuration of the semiconductor wafer removal apparatus 10, The configuration of the substrate processing system using 100 is the same as the configuration of the substrate processing system 40.
[0096]
Next, an attaching process and a peeling process in the semiconductor wafer attaching / detaching apparatus 100 according to the third embodiment will be described with reference to the drawings.
[0097]
FIG. 12 is a process diagram showing an attaching process in the semiconductor wafer attaching / detaching apparatus according to the third embodiment.
[0098]
First, the semiconductor wafer desorption apparatus 100 causes the suction port 15 to vacuum-suction the vicinity of the outer edge of the semiconductor wafer 13 and press the central portion of the semiconductor wafer 13 with the piston 16 so that the semiconductor wafer 13 faces the support disk 103. The pressure-sensitive adhesive sheet 104 is deformed into a convex shape, and the entire surface of the pressure-sensitive adhesive sheet 104 is heated by the temperature control device 101 to liquefy the pressure-sensitive adhesive sheet 104 (FIG. 12A).
[0099]
Then, the semiconductor wafer attaching / detaching apparatus 100 brings the semiconductor wafer 13 into contact with the adhesive sheet 104 while deforming the semiconductor wafer 13 into a convex shape (FIG. 12B). The semiconductor wafer 13 is brought into close contact with the adhesive sheet 104 by moving the semiconductor wafer 13 toward the adhesive 103, and after it is confirmed that no air pool is generated between the semiconductor wafer 13 and the support disk 103, The semiconductor wafer 13 is attached to the adhesive sheet 104 by stopping the heating of the sheet 104 and crystallizing (solidifying) the adhesive sheet 104 (FIG. 12C). Then, the semiconductor wafer attaching / detaching apparatus 100 moves upward and separates from the semiconductor wafer 13 (FIG. 12D).
[0100]
According to the sticking process of FIG. 12, the semiconductor wafer attaching / detaching apparatus 100 can adjust the liquefaction and crystallization of the adhesive sheet 104 by the temperature control apparatus 101, so that the semiconductor wafer 13 and the supporting disk After it is confirmed that no air pockets are generated between the support disks 103, the pressure-sensitive adhesive sheet 104 can be crystallized, so that it is ensured that air pockets are generated between the support disk 103 and the semiconductor wafer 13. Can be prevented.
[0101]
Also, if air is generated between the semiconductor wafer 13 and the support disk 103 when the semiconductor wafer 13 is brought into close contact with the adhesive sheet 104, the air is easily released since the adhesive sheet 104 is a liquid material. It can be performed.
[0102]
FIG. 13 is a process chart showing a peeling process in the semiconductor wafer attaching / detaching apparatus according to the third embodiment.
[0103]
First, the semiconductor wafer attaching / detaching apparatus 100 vacuum-adsorbs the vicinity of the outer edge of the semiconductor wafer 13 by the suction port 15 and presses the central portion of the semiconductor wafer 13 by the piston 16 (FIG. 13A). After heating the entire surface of the pressure-sensitive adhesive sheet 104 to liquefy the pressure-sensitive adhesive sheet 104, gas is ejected from the gas nozzle 17 toward the center of the support disk 103, and the main body 14 is moved upward relative to the piston 16. By moving, the semiconductor wafer 13 is deformed into a convex shape facing the support disk 103 (FIG. 13B).
[0104]
Then, the semiconductor wafer attaching / detaching apparatus 100 separates the semiconductor wafer 13 from the adhesive sheet 104 while deforming the semiconductor wafer 13 into a convex shape (FIG. 13C), and moves the piston 16 relatively upward with respect to the main body 14. Thus, the load pressing the central portion of the semiconductor wafer 13 is removed to restore the semiconductor wafer 13 to a flat plate shape (FIG. 13D).
[0105]
According to the peeling process of FIG. 13, the semiconductor wafer desorption device 100 can adjust the liquefaction and crystallization of the adhesive sheet 104 by the temperature control device 101. Can be deformed into a convex shape facing the support disk 103, so that the semiconductor wafer 13 can be easily peeled off from the adhesive sheet 104.
[0106]
Further, in the process of FIG. 13, after the semiconductor wafer 13 deformed into the convex shape is peeled off from the adhesive sheet 104, the piston 16 is moved upward relative to the main body 14 (FIGS. 13C and 13D). )), The piston 16 is moved relatively upward with respect to the main body 14 while the central portion of the semiconductor wafer 13 deformed in the convex shape is adhered to the adhesive sheet 104, so that the center of the semiconductor wafer 13 is The central portion may be separated from the adhesive sheet 104 by the spring force of the semiconductor wafer 13 by removing the load pressing the portion. Thereby, the occurrence of cracks and chipping of the semiconductor wafer 13 can be reliably prevented.
[0107]
Further, the configuration of temperature control device 101 is not limited to the above-described configuration, and another configuration may be adopted according to the application.
[0108]
FIG. 14 is a plan view of the substrate 102 having another temperature control device therein.
[0109]
In FIG. 14, a temperature control device 140 includes a plurality of heating wires 141 arranged radially from the center at the center of the substrate 102 and a plurality of heating wires 142 arranged radially from the center at the outer periphery of the substrate 102. And may be composed of This makes it possible to separately adjust the temperature of the central portion and the outer peripheral portion of the adhesive sheet 104, so that the central portion of the adhesive sheet 104 is first liquefied in the step of FIG. After the deformed semiconductor wafer 13 is brought into close contact with the central portion, the outer peripheral portion of the adhesive sheet 104 is liquefied, whereby the occurrence of air pockets can be more reliably prevented, and the process shown in FIG. In the first step, the outer peripheral portion of the adhesive sheet 104 is first liquefied, and the semiconductor wafer 13 is peeled off from the outer peripheral portion first. It is possible to reliably prevent the semiconductor wafer 13 from being loaded and to prevent the semiconductor wafer 13 from being cracked or chipped.
[0110]
FIG. 15 is a plan view of the substrate 102 having another temperature control device therein.
[0111]
In FIG. 15, a temperature control device 150 includes a plurality of heating wires 151 arranged along a circumferential direction at a central portion of the substrate 102 and a plurality of heating wires 151 arranged along the circumferential direction at an outer peripheral portion of the substrate 102. And the same effect as the temperature control device 140 of FIG. 14 can be obtained. Note that the temperature control device 150 may include one heating wire 151 and one heating wire 152.
[0112]
FIG. 16 is a plan view of the substrate 102 having another temperature control device therein.
[0113]
In FIG. 16, the temperature control device 160 has a heating wire 161 arranged in a petal shape at the center of the substrate 102 and a heating wire 162 arranged along the circumferential direction at the outer periphery of the substrate 102. Therefore, the same effect as that of the temperature control device 140 of FIG. 14 can be obtained.
[0114]
Further, the adhesive sheet 104 may be made of wax instead of a liquid crystal material. Since the wax also has a property of becoming liquid at a high temperature range and becoming solid at a low temperature range, the adhesive sheet 104 is made of a liquid crystal material. The same effect as in the case of the configuration can be obtained.
[0115]
Further, the pressure-sensitive adhesive sheets 12 and 104 may be made of silicon rubber, and the intermolecular force (van der Waals force) between the molecules forming the silicon rubber and the molecules forming the semiconductor wafer 13 and forming the silicon rubber. The semiconductor wafer 13 and the supporting disks 11 and 103 can be securely adhered to each other by the intermolecular force between the molecules to be formed and the molecules constituting the supporting disks 11 and 103.
[0116]
In addition, as the adhesive sheets 12 and 104, any material can be used as long as the semiconductor wafer 13 is brought into close contact with the supporting disks 11 and 103. A sheet or the like formed by mixing a heat conductivity improving material is preferable.
[0117]
【The invention's effect】
As described in detail above, according to the substrate attaching / detaching apparatus according to the first aspect, the pressing unit that presses the central portion of the substrate from one surface to the direction related to the other surface is provided. Since it is arranged at the corresponding position, when the substrate is attached to the supporting base, the center part of the substrate can first contact the supporting base, and the air is provided between the supporting base and the semiconductor wafer. The occurrence of accumulation can be prevented. Furthermore, when the substrate is separated from the supporting base, the substrate can be separated from the outer edge of the substrate, so that generation of a local load can be prevented, and thus, cracking or chipping of the semiconductor wafer can be prevented.
[0118]
According to the substrate attaching / detaching apparatus of the second aspect, since the temperature control device adjusts the temperature of the phase-changeable adhesive material provided between the substrate and the supporting base, the temperature of the substrate and the supporting base adhered to each other is adjusted. After it is confirmed that no air pockets are generated between the adhesive material, the adhesive material can be solidified, thereby reliably preventing the air pool from being generated between the substrate and the supporting base, and After the is liquefied, the substrate can be peeled off from the support base, thereby facilitating the peeling of the substrate from the support base.
[0119]
According to the substrate attaching / detaching apparatus according to the third aspect, since the substrate has a convex shape with respect to the direction from one surface to the other surface, when the substrate is attached to the supporting base, the center portion of the substrate surely comes first. Therefore, it is possible to reliably prevent the air pool from being generated between the support base and the semiconductor wafer.
[0120]
According to the substrate attaching / detaching apparatus according to the fourth aspect, since the discharging means is provided outside the outer edge of the substrate and discharges the fluid between the supporting substrate and the substrate, the substrate is detached from the supporting substrate. In this case, the substrate can be reliably peeled off from the outer edge of the substrate, thereby preventing the occurrence of a local load. As a result, the occurrence of cracks and chips in the semiconductor wafer can be reliably prevented.
[0121]
According to the substrate attaching / detaching apparatus according to claim 5, the adsorbing means adsorbs a plurality of locations near the outer edge, so that when the substrate is attached to the supporting base, the substrate can exhibit a convex shape stably, The outer edge of the substrate can be prevented from first contacting the supporting substrate. As a result, it is possible to more reliably prevent air from being trapped between the supporting substrate and the semiconductor wafer.
[0122]
According to the substrate attaching / detaching apparatus according to the sixth aspect, since the suction means vacuum-adsorbs the substrate, the substrate can be stably held.
[0123]
According to the substrate attaching / detaching method according to the seventh aspect, the central portion of the substrate is pressed from one surface to the direction related to the other surface, and the vicinity of the outer edge of the substrate is sucked, so that the substrate can be attached to the supporting base. In addition, the center of the substrate can first contact the support base, and the occurrence of air pockets between the support base and the semiconductor wafer can be prevented.
[0124]
According to the substrate attaching / detaching method according to claim 8, since the temperature of the adhesive material that changes in phase depending on the temperature provided between the substrate and the support base is adjusted, the substrate and the support base adhered to each other are adjusted. After it is confirmed that no air pocket is generated, the adhesive material can be solidified, and thus it is possible to reliably prevent the generation of the air pool between the substrate and the supporting base.
[0125]
According to the substrate attaching / detaching method according to the ninth aspect, the central portion of the substrate is pressed from one surface to the direction related to the other surface, and the vicinity of the outer edge of the substrate is adsorbed. It can be peeled off from the outer edge of the substrate, thereby preventing the occurrence of a local load. This can prevent the semiconductor wafer from cracking or chipping.
[0126]
According to the method of attaching and detaching a substrate according to claim 10, since the temperature of the adhesive material that changes phase according to the temperature disposed between the substrate and the support substrate is adjusted, the substrate is supported after the adhesive material is liquefied. From the supporting base, thereby facilitating the separation of the substrate from the supporting base.
[0127]
According to the substrate attaching / detaching method according to claim 11, the substrate is deformed from one surface to a convex shape with respect to the direction related to the other surface, and the convex shape is maintained. Can be peeled off at the end, so that generation of a local load can be reliably prevented. As a result, the occurrence of cracks and chips in the semiconductor wafer can be reliably prevented.
[0128]
According to the substrate attaching / detaching method according to the twelfth aspect, since the substrate is deformed from one surface to a convex shape with respect to the direction related to the other surface and the pressing force is removed, the substrate is supported using the reaction force of the substrate. , And the occurrence of a local load can be reliably prevented. As a result, the occurrence of cracks and chips in the semiconductor wafer can be reliably prevented.
[0129]
According to the substrate attaching / detaching method according to the thirteenth aspect, since the fluid is discharged between the support base and the substrate from outside the outer edge of the substrate, when the substrate is separated from the support base, the outer edge of the substrate is first placed. Peeling can be performed, so that generation of a local load can be more reliably prevented. This makes it possible to more reliably prevent the semiconductor wafer from being cracked or chipped.
[0130]
According to the substrate attaching / detaching method according to the fourteenth aspect, since a plurality of locations in the vicinity of the outer edge are sucked, the substrate can stably exhibit a convex shape when the substrate is attached to the supporting base, and the outer edge of the substrate can be stably exhibited. Can be prevented from coming into contact with the supporting substrate first, and when the substrate is separated from the supporting substrate, the outer edge of the substrate can be surely peeled off first, thereby generating a local load. Can be more reliably prevented.
[0131]
According to the substrate attaching / detaching method according to the fifteenth aspect, the substrate is vacuum-adsorbed, so that the substrate can be stably held.
[Brief description of the drawings]
FIG. 1 is a perspective view showing a schematic configuration of a semiconductor wafer attaching / detaching apparatus according to a first embodiment of the present invention.
FIG. 2 is a sectional view taken along line II-II in FIG.
FIG. 3 is a plan view showing a schematic configuration of the semiconductor wafer attaching / detaching apparatus 10 of FIG. 1;
FIG. 4 is a diagram showing a schematic configuration of a substrate processing system 40 in which the semiconductor wafer attaching / detaching apparatus 10 of FIG. 1 is used.
FIG. 5 is a process chart showing a manufacturing process for manufacturing semiconductor chips from a semiconductor wafer 13;
FIG. 6 is a process diagram showing a procedure for attaching and detaching the semiconductor wafer 13 to and from the support disk 11.
FIG. 7 is a process diagram showing an attaching process in the semiconductor wafer attaching / detaching apparatus according to the first embodiment of the present invention.
FIG. 8 is a process diagram showing a peeling process in the semiconductor wafer attaching / detaching apparatus according to the first embodiment of the present invention.
FIG. 9 is a process diagram showing a peeling process in the semiconductor wafer detaching apparatus according to the second embodiment of the present invention.
FIG. 10 is a sectional view showing a schematic configuration of a semiconductor wafer attaching / detaching apparatus according to a third embodiment of the present invention.
11 is a plan view of a base 102 having a temperature control device 101 in FIG. 10 therein.
FIG. 12 is a process diagram showing an attaching process in a semiconductor wafer attaching / detaching apparatus according to a third embodiment of the present invention.
FIG. 13 is a process chart showing a peeling process in the semiconductor wafer attaching / detaching apparatus according to the third embodiment of the present invention.
FIG. 14 is a plan view of a base 102 having another temperature control device therein.
FIG. 15 is a plan view of a base having another temperature control device therein.
FIG. 16 is a plan view of a base having another temperature control device therein.
FIG. 17 is a process diagram showing a conventional manufacturing process for manufacturing a thin semiconductor chip from a semiconductor wafer.
[Explanation of symbols]
10. Semiconductor wafer removal equipment
11,103 Support disk
12,104 Adhesive sheet
13 Semiconductor wafer
14 Body
15 Suction port
16 piston
17 Gas nozzle
18 Guide
40 Substrate processing system
41 Substrate processing equipment
101 Temperature control device
102 base

Claims (16)

In a substrate detaching device that comprises an adsorbing unit that adsorbs one surface of a plate-shaped substrate, and sticks the substrate to a supporting substrate or separates the substrate from the supporting substrate.
A substrate detaching device, comprising: pressing means for pressing a central portion of the substrate from the one surface in a direction related to the other surface, wherein the suction means is arranged at a position corresponding to a vicinity of an outer edge of the substrate. . An adhesive material that is phase-changed according to a temperature disposed between the substrate and the support substrate, and a base that is disposed below the support substrate and has a temperature control device that adjusts the temperature of the adhesive material. The substrate attaching / detaching apparatus according to claim 1, further comprising: The substrate removing device according to claim 1, wherein the substrate has a convex shape in a direction from the one surface to the other surface. The substrate detachment according to any one of claims 1 to 3, further comprising a discharge unit disposed outside an outer edge of the substrate and discharging a fluid between the support base and the substrate. apparatus. 5. The apparatus according to claim 1, wherein the suction unit suctions a plurality of locations near the outer edge. The substrate attaching / detaching apparatus according to any one of claims 1 to 5, wherein the adsorbing unit vacuum-adsorbs the substrate. In a substrate attaching / detaching method having an adsorbing step of adsorbing one surface of a plate-like substrate and an attaching step of attaching the substrate to a support base,
A method for attaching and detaching a substrate, comprising: a pressing step of pressing a central portion of the substrate from the one surface to a direction relating to the other surface, wherein the adsorbing step adsorbs a portion near an outer edge of the substrate. 8. The method according to claim 7, further comprising a temperature adjusting step of adjusting a temperature of the adhesive material that changes in phase depending on a temperature provided between the substrate and the supporting substrate. In a substrate attaching / detaching method having an adsorbing step of adsorbing one surface of a plate-shaped substrate and a peeling step of peeling the substrate from a supporting substrate,
A method of attaching and detaching a substrate, comprising: a pressing step of applying a pressing force from the one surface to the other surface in a central portion of the substrate; and adsorbing a portion near an outer edge of the substrate in the adsorption step. The method according to claim 9, further comprising adjusting a temperature of the adhesive material that changes in phase depending on a temperature provided between the substrate and the supporting substrate. The method according to claim 9, further comprising a deforming step of deforming the substrate from the one surface to a convex shape with respect to a direction related to the other surface, and maintaining the convex shape in the peeling step. . The method according to claim 9, further comprising a deforming step of deforming the substrate from the one surface to a convex shape with respect to a direction related to the other surface, wherein the pressing force is removed in the peeling step. . The method according to any one of claims 9 to 12, further comprising a discharge step of discharging a fluid between the support base and the substrate from outside the outer edge of the substrate. 14. The method according to claim 7, wherein a plurality of locations near the outer edge are attracted in the attracting step. 15. The method according to claim 7, wherein the substrate is vacuum-adsorbed in the adsorption step. A substrate processing system comprising the substrate detaching device according to any one of claims 1 to 6.

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