JP2015106711A - Substrate separating device - Google Patents

Substrate separating device Download PDF

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JP2015106711A
JP2015106711A JP2014161752A JP2014161752A JP2015106711A JP 2015106711 A JP2015106711 A JP 2015106711A JP 2014161752 A JP2014161752 A JP 2014161752A JP 2014161752 A JP2014161752 A JP 2014161752A JP 2015106711 A JP2015106711 A JP 2015106711A
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substrate
surface plate
vacuum
region
adherend
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JP6134297B2 (en
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フンスン キム，
Heung Sun Kim
フンスン キム，
スンホ リー，
Seung Hoo Lee
スンホ リー，
キボク カン，
Ki Bok Kang
キボク カン，
ジョンドク パク，
Jong Duk Park
ジョンドク パク，
サンリオウル キム，
Sang Lyoul Kim
サンリオウル キム，
ヨンチャン リー，
Yong Chan Lee
ヨンチャン リー，
ジョンヒョン セオ，
Jung Hyun Seo
ジョンヒョン セオ，
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LG Electronics Inc
LG Display Co Ltd
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LG Electronics Inc
LG Display Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Compressors, Vaccum Pumps And Other Relevant Systems (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a substrate separating device which prevents stress from being applied to a certain location on an attachment object by arranging a plurality of upper surface plates.SOLUTION: A substrate separating device includes: a lower surface plate 200 for supporting an attachment object 120 attached with a conveyance substrate 140; and an upper surface plate 300 which is arranged above the conveyance substrate 140 so as to apply vacuum force to the conveyance substrate 140, thereby separating it from the attachment object 120. The upper surface plate 300 is made up of: a first upper surface plate which is arranged in a first region corresponding to an edge region on one side of the conveyance substrate 140; a third upper surface plate which is arranged in a third region corresponding to an edge region on the other side of the conveyance substrate 140; and a second upper surface plate arranged in a second region located between the first region and the third region.

Description

本発明は、基板分離装置に関するものであり、より詳しくは、フレキシブル基板に粘着された搬送基板を分離するための基板分離装置に関するものである。   The present invention relates to a substrate separating apparatus, and more particularly to a substrate separating apparatus for separating a transport substrate adhered to a flexible substrate.

最近、ＣＲＴ（Ｃａｔｈｏｄｅ Ｒａｙ Ｔｕｂｅ，陰極線管表示装置）に代わって液晶表示装置（Ｌｉｑｕｉｄ Ｃｒｙｓｔａｌ Ｄｉｓｐｌａｙ，ＬＣＤ）、ＰＤＰ（Ｐｌａｓｍａ Ｄｉｓｐｌａｙ Ｐａｎｎｅｌ，プラズマ表示装置）、ＯＬＥＤ（Ｏｒｇａｎｉｃ Ｌｉｇｈｔ Ｅｍｉｔｔｉｎｇ Ｄｉｏｄｅｓ，有機ダイオード表示装置）などの平板表示装置が急速に発展しつつある。   Recently, in place of CRT (Cathode Ray Tube, cathode ray tube display), liquid crystal display (LCD), PDP (plasma display panel, plasma display), OLED (Organic Light Emitting Diode), display device. Flat panel displays such as these are rapidly developing.

そのうち、液晶表示装置は他のディスプレー装置に比べて薄くて軽く、低い消費電力及び低い駆動電圧を備えているため多様な装置に広範囲に使用されている。   Among them, the liquid crystal display device is thinner and lighter than other display devices and has a low power consumption and a low driving voltage, and thus is widely used in various devices.

液晶表示装置は、ＬＣＤパネルと、ＬＣＤパネルに光を提供するバックライトユニットを含む。ＬＣＤパネルは、互いに結合した薄膜トランジスタ基板（ＴＦＴ基板）とカラーフィルタ基板（ＣＦ基板）を含む。   The liquid crystal display device includes an LCD panel and a backlight unit that provides light to the LCD panel. The LCD panel includes a thin film transistor substrate (TFT substrate) and a color filter substrate (CF substrate) coupled to each other.

最近ではＬＣＤパネルをスリム化するための方法として化学的エッチング方法を利用して製品を製造しているが、この化学的エッチング方法は、環境的な管理の必要性と化学物質の使用による製造コストの増加及び化学的薬液工程の特性上の不良をもたらす。   Recently, products are manufactured using a chemical etching method as a method for slimming the LCD panel. However, this chemical etching method requires the environmental management and the manufacturing cost due to the use of chemical substances. And increase in chemical process characteristics.

これを解決するために薄型のＬＣＤパネル、即ち、ＴＦＴ基板及びＣＦ基板の表面に搬送基板を付着して工程を進行した後、工程を終えてから搬送基板をＴＦＴ基板及びＣＦ基板から分離してスリム化されたＬＣＤパネルを生産している。   In order to solve this problem, the thin LCD panel, that is, the transfer substrate is attached to the surface of the TFT substrate and the CF substrate and the process proceeds. After the process is completed, the transfer substrate is separated from the TFT substrate and the CF substrate. It produces slim LCD panels.

従来は搬送基板を分離するために搬送基板に付着された基板を固定させた状態で複数の吸着パッドを使用して搬送基板を基板から分離していた。   Conventionally, in order to separate the transfer substrate, the transfer substrate is separated from the substrate using a plurality of suction pads in a state where the substrate attached to the transfer substrate is fixed.

しかし、吸着パッドを利用して搬送基板を基板から分離すると、吸着パッドが吸着された状態で搬送基板に力を加えるようになるため基板の特定部位にストレスが加えられて基板の不良をもたらす。特に、基板が大型化されるにつれ特定部位のストレスによる不良が更に増加するようになる。   However, if the transport substrate is separated from the substrate using the suction pad, a force is applied to the transport substrate in a state where the suction pad is sucked, so that stress is applied to a specific part of the substrate, resulting in a defective substrate. In particular, as the size of the substrate increases, the number of defects due to stress at a specific site increases further.

前記のような問題点を解決するために、本発明は、搬送基板をＴＦＴ基板又はＣＦ基板から分離する場合、特定部位のストレスによる基板の不良を防止するための基板分離装置を提供することをその目的とする。   In order to solve the above-described problems, the present invention provides a substrate separating apparatus for preventing a substrate from being defective due to a stress at a specific portion when a transfer substrate is separated from a TFT substrate or a CF substrate. For that purpose.

上述した目的を達成するために、本発明の一実施例による基板分離装置は、搬送基板が付着した被着物を支持する下定盤と、前記搬送基板の上に配置されて前記搬送基板に真空力を加えて被着物から分離する上定盤を含み、前記上定盤は搬送基板の一側縁領域と対応する第１領域に配置される第１上定盤と、前記搬送基板の他側縁領域と対応する第３領域に配置される第３上定盤と、前記第１領域と第３領域との間の第２領域に配置される第２上定盤で形成される。   In order to achieve the above-described object, a substrate separation apparatus according to an embodiment of the present invention includes a lower platen that supports an adherend to which a transfer substrate is attached, and a vacuum force that is disposed on the transfer substrate and is applied to the transfer substrate. The upper surface plate is separated from the adherend, and the upper surface plate is disposed in a first region corresponding to one side edge region of the transport substrate, and the other side edge of the transport substrate. A third upper surface plate disposed in a third region corresponding to the region, and a second upper surface plate disposed in a second region between the first region and the third region.

本発明の他の実施例による基板処理装置は、第１真空圧を利用して搬送基板が付着した被着物を支持する下定盤と、前記下定盤に前記第１真空圧を供給する下部真空ポンプと、前記搬送基板の上に配置されて第２真空圧を利用して前記搬送基板を被着物から分離する複数の上定盤と、前記複数の上定盤に前記第２真空圧を供給する少なくとも一つの下部真空ポンプと、を含む。   A substrate processing apparatus according to another embodiment of the present invention includes a lower surface plate that supports an adherend to which a transfer substrate is adhered using a first vacuum pressure, and a lower vacuum pump that supplies the first vacuum pressure to the lower surface plate. A plurality of upper surface plates disposed on the transport substrate and separating the transport substrate from the adherend using a second vacuum pressure; and supplying the second vacuum pressure to the plurality of upper surface plates. At least one lower vacuum pump.

本発明は、真空圧によって搬送基板を被着物から分離することで、被着物を搬送基板からより安定的に分離する効果がある。   The present invention has an effect of separating the adherend from the transport substrate more stably by separating the transport substrate from the adherend by vacuum pressure.

また、本発明は、複数の上定盤を配置することで、被着物の特定部位にストレスが加えられることを防止する効果がある。   Moreover, this invention has the effect which prevents that a stress is added to the specific site | part of a to-be-adhered object by arrange | positioning a several upper surface plate.

また、本発明は、複数の上定盤を局部的に制御することで、基板の分離速度を制御することによって被着物に加えられる衝撃を最小化する効果がある。   In addition, the present invention has the effect of minimizing the impact applied to the adherend by controlling the separation speed of the substrate by locally controlling the plurality of upper surface plates.

第１実施例による基板分離装置を示す斜視図である。It is a perspective view which shows the substrate separation apparatus by 1st Example. 図１のＡ−Ａによる断面図である。It is sectional drawing by AA of FIG. 第１実施例による基板分離装置のリングを中心に示す部分断面図である。It is a fragmentary sectional view centering on the ring of the substrate separation apparatus by 1st Example. 第１実施例による基板分離装置によって被着基板から搬送基板の一部が分離される状態を示す断面図である。It is sectional drawing which shows the state from which a part of conveyance board | substrate is isolate | separated from a to-be-coated substrate by the substrate separation apparatus by 1st Example. 第１実施例による基板分離装置の動作手順の一実施例を示す図である。It is a figure which shows one Example of the operation | movement procedure of the board | substrate separation apparatus by 1st Example. 第１実施例による基板分離装置の動作手順の一実施例を示す図である。It is a figure which shows one Example of the operation | movement procedure of the board | substrate separation apparatus by 1st Example. 第１実施例による基板分離装置の動作手順の一実施例を示す図である。It is a figure which shows one Example of the operation | movement procedure of the board | substrate separation apparatus by 1st Example. 第１実施例による基板分離装置の動作手順の一実施例を示す図である。It is a figure which shows one Example of the operation | movement procedure of the board | substrate separation apparatus by 1st Example. 第２実施例による基板分離装置を示す断面図である。It is sectional drawing which shows the substrate separation apparatus by 2nd Example. 第３実施例による基板分離装置を示す概略斜視図である。It is a schematic perspective view which shows the substrate separation apparatus by 3rd Example. 図１０のＢ−Ｂによる断面図である。It is sectional drawing by BB of FIG.

以下、図面を参照して、本発明の実施例を詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

図１は第１実施例による基板分離装置を示す斜視図であり、図２は図１のＡ−Ａによる断面図であり、図３は第１実施例による基板分離装置のリングを中心に示す部分断面図である。   FIG. 1 is a perspective view showing a substrate separating apparatus according to a first embodiment, FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1, and FIG. 3 shows a ring of the substrate separating apparatus according to the first embodiment. It is a fragmentary sectional view.

図１及び図２を参照すると、第１実施例による基板分離装置は、下定盤２００と、前記下定盤２００の上に設置された複数の上定盤３００を含む。複数の上定盤３００は、搬送基板１４０に真空圧（又は真空力）を加え、被着物１２０から搬送基板１４０を分離するのに用いられる。   Referring to FIGS. 1 and 2, the substrate separating apparatus according to the first embodiment includes a lower surface plate 200 and a plurality of upper surface plates 300 installed on the lower surface plate 200. The plurality of upper surface plates 300 are used to apply a vacuum pressure (or vacuum force) to the transport substrate 140 and separate the transport substrate 140 from the adherend 120.

例えば、下定盤２００は四角の板状に形成される。下定盤２００は基板１００を支持するのに用いられる。下定盤２００はその上部に支持された基板１００を固定するのに用いられる。例えば、下定盤２００の形状は基板１００の形状と対応するように形成される。下定盤２００は基板１００の大きさより大きく形成される。   For example, the lower surface plate 200 is formed in a square plate shape. The lower surface plate 200 is used to support the substrate 100. The lower surface plate 200 is used to fix the substrate 100 supported on the upper surface. For example, the shape of the lower surface plate 200 is formed so as to correspond to the shape of the substrate 100. The lower surface plate 200 is formed larger than the size of the substrate 100.

例えば、下定盤２００は真空力を利用して基板１００を固定するとよい。そのために下定盤２００には下部真空孔２４０が形成されるようにするとよい。より詳しくは、下定盤２００には内部に下部空間２２０が形成されるようにし、下定盤２００の上部には下部空間２２０と連通されるように複数個の下部真空孔２４０が形成されるようにしてもよい。下部真空孔２４０は下定盤２００の上部面の一定領域に選択的に形成されてもよく、それとは異なって下定盤２００の上部面全体に均一に形成されてもよい。   For example, the lower surface plate 200 may fix the substrate 100 using a vacuum force. For this purpose, the lower vacuum plate 240 is preferably formed with a lower vacuum hole 240. More specifically, a lower space 220 is formed inside the lower surface plate 200, and a plurality of lower vacuum holes 240 are formed above the lower surface plate 200 so as to communicate with the lower space 220. May be. The lower vacuum hole 240 may be selectively formed in a certain region of the upper surface of the lower surface plate 200, or may be formed uniformly over the entire upper surface of the lower surface plate 200.

下定盤２００には下部真空ポンプ２６０が連結されるようにしてもよい。下部真空ポンプ２６０は下定盤２００の内部に形成された下部空間２２０と連通されるように形成されるようにしてもよい。下定盤２００は−６５ｋＰａ乃至−８５ｋＰａの真空圧によって基板１００を固定するようにしてもよい。例えば、下定盤２００の真空圧は上定盤３００から供給された真空圧より大きくする。   A lower vacuum pump 260 may be connected to the lower surface plate 200. The lower vacuum pump 260 may be formed so as to communicate with the lower space 220 formed in the lower surface plate 200. The lower surface plate 200 may fix the substrate 100 with a vacuum pressure of −65 kPa to −85 kPa. For example, the vacuum pressure of the lower surface plate 200 is made larger than the vacuum pressure supplied from the upper surface plate 300.

前記では下定盤２００が真空力を利用して基板１００を固定させることを説明したが、それに限ることはなく機械力、静電力によって基板１００を固定させてもよい。   In the above description, the lower platen 200 fixes the substrate 100 using the vacuum force. However, the present invention is not limited to this, and the substrate 100 may be fixed by mechanical force or electrostatic force.

基板１００は搬送基板１４０と被着物１２０を含む。被着物１２０は、例えば、ＴＦＴ基板やＣＦ基板である。例えば、ＴＦＴ基板、ＣＦ基板はガラス材質で形成される。搬送基板１４０は被着物１２０のパターン工程及び搬送のためにリジッドな材質で形成される。搬送基板１４０はガラス材質で形成されてもよい。搬送基板１４０は被着物１２０であるガラス基板と粘着剤（図示せず）によって粘着されてもよい。   The substrate 100 includes a transfer substrate 140 and an adherend 120. The adherend 120 is, for example, a TFT substrate or a CF substrate. For example, the TFT substrate and the CF substrate are made of a glass material. The transfer substrate 140 is formed of a rigid material for the patterning process and transfer of the adherend 120. The transport substrate 140 may be formed of a glass material. The transport substrate 140 may be adhered to the glass substrate as the adherend 120 with an adhesive (not shown).

前記では被着物がガラス基板である場合について説明したが、それに限ることはなくフレキシブルな基板であってもよい。それとは異なって、被着物は金属材質の基板であってもよい。   Although the case where the adherend is a glass substrate has been described above, the substrate is not limited to this and may be a flexible substrate. In contrast, the adherend may be a metallic substrate.

上定盤３００は下定盤２００と対向に配置される。例えば、上定盤３００は基板１００と対応する形状に形成される。上定盤３００は基板１００の大きさより大きく形成される。上定盤３００は四角の板状に形成される。上定盤３００は複数の定盤で形成される。上定盤３００は、基板１００に対応する領域に沿って、一例として９つに分割されて形成されてもよい。上定盤３００の個数はそれに限らない。   The upper surface plate 300 is disposed opposite to the lower surface plate 200. For example, the upper surface plate 300 is formed in a shape corresponding to the substrate 100. The upper surface plate 300 is formed larger than the size of the substrate 100. The upper surface plate 300 is formed in a square plate shape. The upper surface plate 300 is formed of a plurality of surface plates. For example, the upper surface plate 300 may be divided into nine parts along the region corresponding to the substrate 100. The number of upper surface plates 300 is not limited thereto.

上定盤３００は、基板１００の一側縁領域と対応する第１領域に配置される第１上定盤３２０と、基板１００の他側縁領域に対応する第３領域に配置される第３上定盤３６０と、前記第１領域と第３領域との間の第２領域に配置される第２上定盤３４０を含む。前記では第２上定盤３４０に当たる定盤が複数個に形成されるが、便宜上第２上定盤３４０と通称する。   The upper surface plate 300 includes a first upper surface plate 320 disposed in a first region corresponding to one side edge region of the substrate 100 and a third region disposed in a third region corresponding to the other side edge region of the substrate 100. It includes an upper surface plate 360 and a second upper surface plate 340 disposed in a second region between the first region and the third region. In the above description, a plurality of surface plates corresponding to the second upper surface plate 340 are formed, but for convenience, they are commonly referred to as the second upper surface plate 340.

第１上定盤３２０は基板１００の一側縁領域、より詳しくは、基板１００の一側縁領域に対応する第１領域に配置される。第１定盤３２０は真空圧（又は真空力）を利用して搬送基板１４０を被着物１２０から分離する。   The first upper surface plate 320 is disposed in one side edge region of the substrate 100, more specifically, in a first region corresponding to one side edge region of the substrate 100. The first surface plate 320 separates the transfer substrate 140 from the adherend 120 using vacuum pressure (or vacuum force).

そのために、第１上定盤３２０は内部に所定の第１上部空間３２１が形成されるようにするとよい。第１上定盤３２０の下部には第１上部空間３２１と連通するように第１上部真空孔３２３が形成されるようにするとよい。第１上定盤３２０には第１上部真空ポンプ３２５が連結されるようにするとよい。第１上部真空ポンプ３２５は第１上定盤３２０の内部に形成された第１上部空間３１０と連通されるように形成されるようにするとよい。第１上定盤３２０は−６５ｋＰａ乃至−８５ｋＰａ、より詳しくは、−７５ｋＰａの真空圧によって搬送基板１４０を被着物１２０から分離するようにするとよい。   For this purpose, the first upper surface plate 320 may be formed with a predetermined first upper space 321 therein. A first upper vacuum hole 323 may be formed at the lower portion of the first upper platen 320 so as to communicate with the first upper space 321. A first upper vacuum pump 325 may be connected to the first upper surface plate 320. The first upper vacuum pump 325 may be formed so as to communicate with the first upper space 310 formed in the first upper surface plate 320. The first upper platen 320 is preferably separated from the adherend 120 by a vacuum pressure of −65 kPa to −85 kPa, more specifically, a vacuum pressure of −75 kPa.

第１上定盤３２０の下面部には多角リング３２７が更に形成されるようにしてもよい。多角リング３２７は第１上定盤３２０の下部の中央領域に形成された第１上部真空孔３２３の周囲に形成されるようにしてもよい。多角リング３２７は第１上定盤３２０の下面部縁に沿って形成されるようにしてもよい。多角リング３２７は第１上定盤３２０と搬送基板１４０との間の空間を密閉する役割をする。それによって、搬送基板１４０は多角リング３２７の下部に支持された状態で被着物１２０と分離される。   A polygonal ring 327 may be further formed on the lower surface portion of the first upper surface plate 320. The polygonal ring 327 may be formed around the first upper vacuum hole 323 formed in the lower central region of the first upper surface plate 320. Polygonal ring 327 may be formed along the lower surface edge of first upper surface plate 320. The polygonal ring 327 serves to seal the space between the first upper surface plate 320 and the transport substrate 140. Thereby, the transport substrate 140 is separated from the adherend 120 while being supported by the lower part of the polygonal ring 327.

図３に示したように、多角リング３２７は第１上定盤３２０の内部に収納することができる。そのために、第１上定盤３２０の下部縁領域には所定の溝Ｈが形成されるようにするとよい。前記溝Ｈには回転部３２９が配置されて多角リング３２７に連結されるようにするとよい。回転部３２９は多角リング３２７を第１上定盤３２０の下部に形成された溝Ｈの内部に回転させ、それによって多角リング３２７は溝Ｈに収納される。   As shown in FIG. 3, the polygonal ring 327 can be stored inside the first upper surface plate 320. For this purpose, a predetermined groove H is preferably formed in the lower edge region of the first upper surface plate 320. A rotating part 329 may be disposed in the groove H and connected to the polygonal ring 327. The rotating unit 329 rotates the polygonal ring 327 into the groove H formed in the lower part of the first upper surface plate 320, so that the polygonal ring 327 is accommodated in the groove H.

図１及び図２に戻って、第３上定盤３６０は基板１００の他側縁領域、より詳しくは、基板１００の他側対角縁領域と対応する第３領域に配置される。第３上定盤３６０は真空圧（又は真空力）を利用して搬送基板１４０を被着物１２０から分離する。第３上定盤３６０の構造は第１上定盤３２０の構造と同じであるため省略する。   Referring back to FIGS. 1 and 2, the third upper surface plate 360 is disposed in the other side edge region of the substrate 100, more specifically, in the third region corresponding to the other side diagonal edge region of the substrate 100. The third upper surface plate 360 separates the transfer substrate 140 from the adherend 120 using vacuum pressure (or vacuum force). Since the structure of the third upper surface plate 360 is the same as that of the first upper surface plate 320, the description thereof is omitted.

第２上定盤３４０は前記第１領域と第３領域との間の第２領域に配置される。第２上定盤３４０は真空圧（又は真空力）を利用して搬送基板１４０を被着物１２０から分離する。第２上定盤３４０の構造は第１上定盤３２０の構造と同じであるため省略する。   The second upper surface plate 340 is disposed in a second area between the first area and the third area. The second upper surface plate 340 separates the transfer substrate 140 from the adherend 120 using vacuum pressure (or vacuum force). Since the structure of the second upper surface plate 340 is the same as that of the first upper surface plate 320, the description thereof is omitted.

以下、第１実施例による基板分離装置の動作を説明する。図４は第１実施例による基板分離装置の基板を示す断面図であり、図５乃至図８は第１実施例による基板分離装置の動作手順の多様な実施例を示す図である。   The operation of the substrate separating apparatus according to the first embodiment will be described below. FIG. 4 is a sectional view showing a substrate of the substrate separating apparatus according to the first embodiment, and FIGS. 5 to 8 are views showing various embodiments of the operation procedure of the substrate separating apparatus according to the first embodiment.

図４に示したように、搬送基板１４０と被着物１２０との間に初期ギャップＧを形成する。前記ギャップＧは搬送基板１４０と被着物１２０の一側縁領域に形成される。搬送基板１４０と被着物１２０の一側縁領域との間のギャップＧは、例えば、２ｍｍ乃至３ｍｍに形成される。前記ギャップＧは、例えば、第１上定盤３２０の縁領域に対応する領域に形成される。   As shown in FIG. 4, an initial gap G is formed between the transport substrate 140 and the adherend 120. The gap G is formed in one side edge region of the transport substrate 140 and the adherend 120. A gap G between the transport substrate 140 and one side edge region of the adherend 120 is formed to be 2 mm to 3 mm, for example. The gap G is formed in a region corresponding to the edge region of the first upper surface plate 320, for example.

図５に示したように、搬送基板１４０と被着物１２０との間に一定ギャップＧが形成されると、第１上定盤３２０を動作させて基板１００の一側縁領域で搬送基板１４０を被着物１２０から脱着する。次に、第２上定盤３４０を動作させて基板１００の両側対角縁領域の間の領域で搬送基板１４０を被着物１２０から分離する。次に、第３上定盤３６０を動作させて基板１００の他側対角縁領域で搬送基板１４０を被着物１２０から分離する。   As shown in FIG. 5, when a certain gap G is formed between the transport substrate 140 and the adherend 120, the first upper surface plate 320 is operated to move the transport substrate 140 in one side edge region of the substrate 100. Desorb from the adherend 120. Next, the second upper surface plate 340 is operated to separate the transport substrate 140 from the adherend 120 in a region between the diagonal edge regions of the substrate 100. Next, the third upper surface plate 360 is operated to separate the transfer substrate 140 from the adherend 120 in the other diagonal region of the substrate 100.

それとは異なって、図６に示したように、搬送基板１４０と被着物１２０との間にギャップＧが形成されると第１上定盤３２０を動作させて基板１００の一側縁領域で搬送基板１４０を被着物１２０から分離する。次に、第２上定盤３４０を動作させて基板１００の両側対角縁領域の間の領域で搬送基板１４０を被着物１２０から分離する。この際、第２上定盤３４０は複数個が配置されてもよく、複数の第２上定盤３４０は基板１００の一側縁領域に近い領域から順番に動作してもよい。次に、第３上定盤３６０を動作させて基板１００の他側対角縁領域で搬送基板１４０を被着部１２０から分離する。   In contrast, as shown in FIG. 6, when the gap G is formed between the transport substrate 140 and the adherend 120, the first upper surface plate 320 is operated and transported in one side edge region of the substrate 100. The substrate 140 is separated from the adherend 120. Next, the second upper surface plate 340 is operated to separate the transport substrate 140 from the adherend 120 in a region between the diagonal edge regions of the substrate 100. At this time, a plurality of second upper surface plates 340 may be arranged, and the plurality of second upper surface plates 340 may operate in order from a region close to one side edge region of the substrate 100. Next, the third upper surface plate 360 is operated to separate the transport substrate 140 from the adherend 120 in the other diagonal region of the substrate 100.

図５及び図６に示したように、搬送基板１４０は被着物１２０から一側縁領域から内側を経て他側対角縁領域に沿って分離される。   As shown in FIGS. 5 and 6, the transfer substrate 140 is separated from the adherend 120 from the one side edge region to the inside along the other side diagonal edge region.

それとは異なって、図７に示したように、搬送基板１４０と被着物１２０との間にギャップＧが形成されると第１上定盤３２０と第３上定盤３６０を動作させて基板１００の一側縁領域と他側縁領域で搬送基板１４０を被着物１２０から分離する。次に、第２上定盤３４０を動作させて基板１００の両側縁領域の間の領域で搬送基板１４０を被着物１２０から分離する。   In contrast, as shown in FIG. 7, when the gap G is formed between the transport substrate 140 and the adherend 120, the first upper surface plate 320 and the third upper surface plate 360 are operated to operate the substrate 100. The transfer substrate 140 is separated from the adherend 120 in one side edge region and the other side edge region. Next, the second upper surface plate 340 is operated to separate the transfer substrate 140 from the adherend 120 in a region between both side edge regions of the substrate 100.

それとは異なって、図８に示したように、搬送基板１４０と被着物１２０との間にギャップＧが形成されると第１上定盤３２０と第３上定盤３６０を動作させて基板１００の一側縁領域と他側縁領域で搬送基板１４０を被着物１２０から分離する。次に、第２上定盤３４０を動作させて基板１００の両側縁領域の間の領域で搬送基板１４０を被着物１２０から分離する。ここで、第２上定盤３４０は複数個に形成されてもよく、複数の第２上定盤３４０のうち基板１００の縁領域に形成された定盤は第１上定盤３２０と第３定盤３６０と同時に動作する。   In contrast, as shown in FIG. 8, when the gap G is formed between the transport substrate 140 and the adherend 120, the first upper surface plate 320 and the third upper surface plate 360 are operated to operate the substrate 100. The transfer substrate 140 is separated from the adherend 120 in one side edge region and the other side edge region. Next, the second upper surface plate 340 is operated to separate the transfer substrate 140 from the adherend 120 in a region between both side edge regions of the substrate 100. Here, the second upper surface plate 340 may be formed in a plurality, and the surface plate formed in the edge region of the substrate 100 among the plurality of second upper surface plates 340 is the first upper surface plate 320 and the third upper surface plate 340. It operates simultaneously with the surface plate 360.

図７及び図８に示したように、搬送基板１４０は被着物１２０から最外郭縁領域から内側領域に沿って分離される。   As shown in FIGS. 7 and 8, the transfer substrate 140 is separated from the adherend 120 along the inner region from the outermost edge region.

図９は、第２実施例による基板分離装置を示す断面図である。   FIG. 9 is a sectional view showing a substrate separating apparatus according to the second embodiment.

図９に示したように、第２実施例による基板分離装置は下定盤２００と、前記下定盤２００の上に配置されて搬送基板１４０に真空力を加えて被着物１２０から搬送基板１４０を分離する複数の上定盤３００を含む。ここで、上定盤３００を除いた構成は第１実施例による基板分離装置と同じであるため省略する。   As shown in FIG. 9, the substrate separating apparatus according to the second embodiment is arranged on the lower surface plate 200 and the lower surface plate 200 and applies a vacuum force to the transport substrate 140 to separate the transport substrate 140 from the adherend 120. A plurality of upper surface plates 300 are included. Here, since the configuration excluding the upper surface plate 300 is the same as that of the substrate separating apparatus according to the first embodiment, the description thereof is omitted.

上定盤３００は基板１００の一側縁領域と対応する第１領域に配置される第１上定盤３２０と、基板１００の他側縁領域と対応する第３領域に配置される第３上定盤３６０と、前記第１領域と第３領域との間の第２領域に配置される第２上定盤３４０を含む。前記では第２上定盤３４０に当たる定盤が複数個で形成されるが、便宜上第２上定盤と通称する。   The upper surface plate 300 includes a first upper surface plate 320 disposed in a first region corresponding to one side edge region of the substrate 100, and a third upper surface disposed in a third region corresponding to the other side edge region of the substrate 100. It includes a surface plate 360 and a second upper surface plate 340 disposed in a second region between the first region and the third region. In the above description, a plurality of surface plates corresponding to the second upper surface plate 340 are formed.

第１上定盤３２０、第２上定盤３４０、第３定盤３６０は一つの上部真空ポンプ４００と連結される。   The first upper surface plate 320, the second upper surface plate 340, and the third surface plate 360 are connected to one upper vacuum pump 400.

上部真空ポンプ４００は第１上定盤３２０に第１配管４２０によって連結され、上部真空ポンプ４００と第１上定盤３２０との間には第１バルブ４２２が配置される。言い換えると、第１バルブ４２２は第１配管４２０に配置される。上部真空ポンプ４００は第２上定盤３４０に第２配管４４０によって連結され、上部真空ポンプ４００と第２上定盤３４０と間には第２バルブ４４２が配置される。即ち、第２バルブ４４２は第２配管４４０に配置される。上部真空ポンプ４００は第３上定盤３６０に第３配管４６０によって連結され、上部真空ポンプ４００と第３上定盤３６０との間には第３バルブ４６２が配置される。言い換えると、第３バルブ４６２は第３配管４６０に配置される。   The upper vacuum pump 400 is connected to the first upper surface plate 320 by a first pipe 420, and a first valve 422 is disposed between the upper vacuum pump 400 and the first upper surface plate 320. In other words, the first valve 422 is disposed in the first pipe 420. The upper vacuum pump 400 is connected to the second upper surface plate 340 by a second pipe 440, and a second valve 442 is disposed between the upper vacuum pump 400 and the second upper surface plate 340. That is, the second valve 442 is disposed in the second pipe 440. The upper vacuum pump 400 is connected to the third upper surface plate 360 by a third pipe 460, and a third valve 462 is disposed between the upper vacuum pump 400 and the third upper surface plate 360. In other words, the third valve 462 is disposed in the third pipe 460.

前記第１バルブ４２２は上部真空ポンプから第１上定盤３２０に供給される真空圧を制御する役割をする。前記第２バルブ４４２は上部真空ポンプ４００から第２上定盤３４０に供給される真空圧を制御する役割をする。前記第３バルブ４６２は上部真空ポンプ４００から第３上定盤３６０に供給される真空圧を制御する役割をする。上部真空ポンプ４００は第１バルブ乃至第３バルブ４２２，４４２，４６２を介して第１上定盤３２０、第２上定盤３４０、第３上定盤３６０にそれぞれ真空圧を供給してもよく、２つ以上の上定盤に同時に真空圧を供給してもよい。   The first valve 422 controls the vacuum pressure supplied from the upper vacuum pump to the first upper platen 320. The second valve 442 serves to control the vacuum pressure supplied from the upper vacuum pump 400 to the second upper surface plate 340. The third valve 462 controls the vacuum pressure supplied from the upper vacuum pump 400 to the third upper surface plate 360. The upper vacuum pump 400 may supply vacuum pressure to the first upper surface plate 320, the second upper surface plate 340, and the third upper surface plate 360 via the first to third valves 422, 442, and 462, respectively. You may supply a vacuum pressure to two or more upper surface plates simultaneously.

図１０は第３実施例による基板分離装置を示す概略斜視図であり、図１１は図１０のＢ−Ｂによる断面図である。   FIG. 10 is a schematic perspective view showing a substrate separating apparatus according to a third embodiment, and FIG. 11 is a sectional view taken along line BB of FIG.

図１０及び図１１を参照すると、第３実施例による基板分離装置は下定盤２００と、前記下定盤２００の上に配置されて搬送基板１４０に真空力を加えて被着物１２０から搬送基板１４０を分離する複数の上定盤５００を含む。ここで、上定盤５００を除いた構成は第１実施例による基板分離装置と同じであるため省略する。   Referring to FIGS. 10 and 11, the substrate separating apparatus according to the third embodiment is disposed on the lower surface plate 200 and the lower surface plate 200 and applies the vacuum force to the transport substrate 140 to remove the transport substrate 140 from the adherend 120. A plurality of upper surface plates 500 to be separated are included. Here, since the configuration excluding the upper surface plate 500 is the same as that of the substrate separating apparatus according to the first embodiment, the description thereof is omitted.

上定盤５００は基板１００の一側縁領域と対応する第１領域に配置される第１上定盤５２０と、基板１００の他側対角縁領域と対応する第３領域に配置される第３上定盤５６０と、前記第１領域と第３領域との間の第２領域に配置される第２上定盤５４０を含む。前記では第２上定盤５４０に当たる定盤は複数個で形成されるが、便宜上第２上定盤と通称する。   The upper surface plate 500 has a first upper surface plate 520 disposed in a first region corresponding to one side edge region of the substrate 100, and a third region disposed in a third region corresponding to the other side diagonal edge region of the substrate 100. A third upper surface plate 560 and a second upper surface plate 540 disposed in a second region between the first region and the third region. In the above description, a plurality of surface plates corresponding to the second upper surface plate 540 are formed.

第１上定盤５２０、第２上定盤５４０、第３上定盤５６０の面積は互いに異なるように形成される。一例として、第１上定盤５２０及び第３上定盤５６０の面積は同じに形成されてもよい。第２上定盤５４０の面積は第１上定盤５２０及び第３上定盤５６０より大きく形成されてもよい。断面上、第１上定盤５２０の両端の距離ｄ１は第３上定盤５６０の両端の距離ｄ３と同じであってもよく、第２上定盤５４０の両端の距離ｄ２は第１上定盤５２０の両端の距離ｄ１より大きく形成されてもよい。   The areas of the first upper surface plate 520, the second upper surface plate 540, and the third upper surface plate 560 are formed to be different from each other. As an example, the areas of the first upper surface plate 520 and the third upper surface plate 560 may be formed to be the same. The area of the second upper surface plate 540 may be larger than that of the first upper surface plate 520 and the third upper surface plate 560. In the cross section, the distance d1 between both ends of the first upper platen 520 may be the same as the distance d3 between both ends of the third upper platen 560, and the distance d2 between both ends of the second upper platen 540 is the first upper platen. It may be formed larger than the distance d1 between both ends of the board 520.

第２上定盤５４０に供給される真空圧は第１上定盤５２０及び第３上定盤５６０に供給される真空圧より大きく形成されてもよい。即ち、上定盤の面積が大きいほど真空圧が大きく形成される。   The vacuum pressure supplied to the second upper surface plate 540 may be formed larger than the vacuum pressure supplied to the first upper surface plate 520 and the third upper surface plate 560. That is, the larger the area of the upper surface plate, the larger the vacuum pressure is formed.

前記では第１上定盤５２０及び第３上定盤５６０の面積が同じで第２上定盤５４０の面積が第１上定盤５２０より大きくなるように配置しているが、それに限ることはなく第１上定盤５２０、第２上定盤５４０、第３上定盤５６０の面積が全て異なるように配置してもよい。   In the above description, the first upper surface plate 520 and the third upper surface plate 560 have the same area, and the second upper surface plate 540 has an area larger than that of the first upper surface plate 520. Alternatively, the first upper surface plate 520, the second upper surface plate 540, and the third upper surface plate 560 may be arranged so that the areas are all different.

各上定盤の面積に応じて真空圧を決定すると、搬送基板１４０が被着物１２０から分離される速度を決定することができる。例えば、全ての領域で分離速度を同じく形成してもよく、特定領域での分離速度を遅く又は速くしてもよい。   When the vacuum pressure is determined according to the area of each upper surface plate, the speed at which the transfer substrate 140 is separated from the adherend 120 can be determined. For example, the separation rate may be the same in all regions, or the separation rate in a specific region may be slow or fast.

前記では図面及び実施例を参照して説明したが、該当技術分野の熟練された当業者は下記特許請求の範囲に記載された実施例の技術的思想から逸脱しない範囲内で実施例を多様に修正及び変更可能であることを理解できるはずである。   Although the foregoing has been described with reference to the drawings and embodiments, those skilled in the art can variously practice the embodiments without departing from the technical spirit of the embodiments described in the claims below. It should be understood that modifications and changes are possible.

１２０ 被着物
１４０ 搬送基板
２００ 下定盤
３２０ 第１上定盤
３２１ 上部空間
３２３ 上部真空孔
３２５ 上部真空ポンプ
３２７ 多角リング 120 deposits
140 Transport substrate 200 Lower surface plate 320 First upper surface plate 321 Upper space 323 Upper vacuum hole 325 Upper vacuum pump 327 Polygonal ring

Claims (18)

搬送基板が付着した被着物を支持する下定盤と、
前記搬送基板の上に配置されて前記搬送基板に真空力を加えて被着物から分離する上定盤と、を含み、
前記上定盤は搬送基板の一側縁領域と対応する第１領域に配置される第１上定盤と、前記搬送基板の他側縁領域と対応する第３領域に配置される第３上定盤と、前記第１領域と第３領域との間の第２領域に配置される第２上定盤を含む基板分離装置。 A lower surface plate that supports the adherend to which the transfer substrate is attached;
An upper surface plate disposed on the transport substrate and separating the adherend by applying a vacuum force to the transport substrate;
The upper surface plate is a first upper surface plate disposed in a first region corresponding to one side edge region of the transport substrate, and a third upper surface disposed in a third region corresponding to the other side edge region of the transport substrate. A substrate separating apparatus including a surface plate and a second upper surface plate disposed in a second region between the first region and the third region. 前記各上定盤の内部には上部空間が形成され、上部空間と連通するように各上定盤の下部面の中央領域には上部真空孔が形成され、前記各上定盤の上部空間は上部真空ポンプとそれぞれ連結される請求項１に記載の基板分離装置。 An upper space is formed inside each upper surface plate, and an upper vacuum hole is formed in a central region of the lower surface of each upper surface plate so as to communicate with the upper space. The upper space of each upper surface plate is The substrate separation apparatus according to claim 1, wherein the substrate separation apparatus is connected to an upper vacuum pump. 前記上部真空孔が形成された各上定盤の縁に沿ってリングが配置された請求項２に記載の基板分離装置。 The substrate separating apparatus according to claim 2, wherein a ring is disposed along an edge of each upper surface plate in which the upper vacuum hole is formed. 前記上定盤の下部面には所定の溝が形成され、前記リングは回転部によって所定の溝に回転されて収納される請求項３に記載の基板分離装置。 The substrate separating apparatus according to claim 3, wherein a predetermined groove is formed on a lower surface of the upper surface plate, and the ring is rotated and stored in the predetermined groove by a rotating unit. 前記各上定盤の内部には上部空間が形成され、上部空間と連通するように各上定盤の下部面の中央領域には上部真空孔が形成され、前記各上定盤の上部空間は一つの上部真空ポンプと連結される請求項１に記載の基板分離装置。 An upper space is formed inside each upper surface plate, and an upper vacuum hole is formed in a central region of the lower surface of each upper surface plate so as to communicate with the upper space. The upper space of each upper surface plate is The substrate separating apparatus according to claim 1, wherein the substrate separating apparatus is connected to one upper vacuum pump. 前記上部真空ポンプは第１上定盤に連結される第１配管と、前記上部真空ポンプと第１配管との間に配置される第１バルブと、第２上定盤に連結される第２配管と、前記上部真空ポンプと第２配管との間に配置される第２バルブと、第３上定盤に連結される第３配管と、前記上部真空ポンプと第３配管との間に配置される第３バルブを含む請求項５に記載の基板分離装置。 The upper vacuum pump has a first pipe connected to the first upper platen, a first valve disposed between the upper vacuum pump and the first pipe, and a second pipe connected to the second upper platen. A pipe, a second valve arranged between the upper vacuum pump and the second pipe, a third pipe connected to a third upper surface plate, and arranged between the upper vacuum pump and the third pipe. The substrate separation apparatus according to claim 5, further comprising a third valve. 前記第１上定盤乃至第３上定盤の面積は互いに異なる請求項１に記載の基板分離装置。 The substrate separating apparatus according to claim 1, wherein areas of the first upper surface plate to the third upper surface plate are different from each other. 前記第１上定盤乃至第３上定盤に供給される真空圧は面積が大きいほど真空力を大きくする請求項７に記載の基板分離装置。 The substrate separating apparatus according to claim 7, wherein the vacuum pressure supplied to the first upper surface plate to the third upper surface plate increases the vacuum force as the area increases. 前記真空圧は−６５ｋＰａ乃至−８５ｋＰａに設定される請求項１に記載の基板分離装置。 The substrate separation apparatus according to claim 1, wherein the vacuum pressure is set to −65 kPa to −85 kPa. 前記下定盤の内部には下部空間が形成され、下部空間と連通されるように各下定盤の下部面の中央領域には下部真空孔が形成され、前記各下定盤の下部空間は下部真空ポンプと連結される請求項１に記載の基板分離装置。 A lower space is formed in the lower surface plate, a lower vacuum hole is formed in a central region of the lower surface of each lower surface plate so as to communicate with the lower space, and the lower space of each lower surface plate is a lower vacuum pump The substrate separation apparatus according to claim 1, wherein the substrate separation apparatus is coupled to the substrate separation apparatus. 前記第１上定盤に真空力を加えた後、第２上定盤に真空力を加えてから第３上定盤に真空力を加えて搬送基板を被付着物から分離する請求項１に記載の基板分離装置。 The vacuum substrate is applied to the first upper surface plate, then the vacuum force is applied to the second upper surface plate, and then the vacuum force is applied to the third upper surface plate to separate the transfer substrate from the adherend. The substrate separating apparatus as described. 前記第１上定盤と第３上定盤に真空力を加えた後、第２上定盤に真空力を加えて搬送基板を被付着物から分離する請求項１に記載の基板分離装置。 The substrate separating apparatus according to claim 1, wherein a vacuum force is applied to the first upper surface plate and the third upper surface plate, and then a transport substrate is separated from the adherend by applying a vacuum force to the second upper surface plate. 前記搬送基板と被付着物は最外郭縁領域から内側に向かって順次に分離される請求項１に記載の基板分離装置。 The substrate separating apparatus according to claim 1, wherein the transport substrate and the adherend are sequentially separated from the outermost edge region inward. 前記搬送基板と被付着物は一側縁領域から内側に向かって他側縁領域に沿って順次に分離される請求項１に記載の基板分離装置。 The substrate separating apparatus according to claim 1, wherein the transfer substrate and the adherend are sequentially separated from one side edge region toward the inside along the other side edge region. 第１真空圧を利用して、搬送基板が付着した被着物を支持する下定盤と、
前記下定盤に前記第１真空圧を供給する下部真空ポンプと、
前記搬送基板の上に配置され、前記第２真空圧を利用して前記搬送基板を被着物から分離する複数の上定盤と、
前記複数の上定盤に前記第２真空圧を供給する少なくとも一つの上部真空ポンプと、を含む基板分離装置。 Using the first vacuum pressure, a lower surface plate for supporting the adherend to which the transport substrate is attached;
A lower vacuum pump for supplying the first vacuum pressure to the lower platen;
A plurality of upper surface plates disposed on the transport substrate and separating the transport substrate from an adherend using the second vacuum pressure;
A substrate separating apparatus comprising: at least one upper vacuum pump that supplies the second vacuum pressure to the plurality of upper surface plates. 前記少なくとも一つの上部真空ポンプは前記複数の上定盤にそれぞれ連結された複数の上部真空ポンプを含む請求項１５に記載の基板分離装置。 The substrate separation apparatus according to claim 15, wherein the at least one upper vacuum pump includes a plurality of upper vacuum pumps respectively connected to the plurality of upper surface plates. 前記少なくとも一つの上部真空ポンプは前記複数の上定盤に共通的に連結された一つの真空ポンプを含む請求項１５に記載の基板分離装置。 The substrate separation apparatus according to claim 15, wherein the at least one upper vacuum pump includes one vacuum pump commonly connected to the plurality of upper surface plates. 前記上部真空ポンプと前記複数の上定盤との間に連結された複数の配管と、
前記複数の配管に配置された複数のバルブと、を含む請求項１７に記載の基板分離装置。 A plurality of pipes connected between the upper vacuum pump and the plurality of upper surface plates;
The substrate separation apparatus according to claim 17, comprising a plurality of valves disposed in the plurality of pipes.
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