CN103370800A - A method and apparatus for forming a thin lamina - Google Patents
A method and apparatus for forming a thin lamina Download PDFInfo
- Publication number
- CN103370800A CN103370800A CN201180062986XA CN201180062986A CN103370800A CN 103370800 A CN103370800 A CN 103370800A CN 201180062986X A CN201180062986X A CN 201180062986XA CN 201180062986 A CN201180062986 A CN 201180062986A CN 103370800 A CN103370800 A CN 103370800A
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- laminate
- executing
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- base assembly
- porous
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- 238000000034 method Methods 0.000 title claims description 90
- 238000004299 exfoliation Methods 0.000 claims abstract description 30
- 238000002513 implantation Methods 0.000 claims abstract description 23
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 69
- 239000000463 material Substances 0.000 claims description 42
- 238000003776 cleavage reaction Methods 0.000 claims description 38
- 230000007017 scission Effects 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 229910002804 graphite Inorganic materials 0.000 claims description 22
- 239000010439 graphite Substances 0.000 claims description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 21
- 238000005452 bending Methods 0.000 claims description 20
- 238000002347 injection Methods 0.000 claims description 18
- 239000007924 injection Substances 0.000 claims description 18
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 14
- 230000008859 change Effects 0.000 claims description 11
- 229910021426 porous silicon Inorganic materials 0.000 claims description 11
- 230000002950 deficient Effects 0.000 claims description 7
- 239000011148 porous material Substances 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052582 BN Inorganic materials 0.000 claims description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 229910017083 AlN Inorganic materials 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000012546 transfer Methods 0.000 claims description 5
- 239000012466 permeate Substances 0.000 claims 3
- 230000033558 biomineral tissue development Effects 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 238000010438 heat treatment Methods 0.000 abstract description 12
- 239000007943 implant Substances 0.000 abstract 1
- 230000008093 supporting effect Effects 0.000 description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 238000000137 annealing Methods 0.000 description 26
- 235000012431 wafers Nutrition 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 20
- 230000008569 process Effects 0.000 description 16
- 238000000926 separation method Methods 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 238000005457 optimization Methods 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000004901 spalling Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 244000137852 Petrea volubilis Species 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- -1 helium ion Chemical class 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000004859 Gamochaeta purpurea Species 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000035508 accumulation Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011214 refractory ceramic Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- High Energy & Nuclear Physics (AREA)
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Abstract
A method for producing a lamina from a donor body includes implanting the donor body with an ion dosage and heating the donor body to an implant temperature during implanting. The donor body is separably contacted with a susceptor assembly, where the donor body and the susceptor assembly are in direct contact. A lamina is exfoliated from the donor body by applying a thermal profile to the donor body. Implantation and exfoliation conditions may be adjusted in order to maximize the defect-free area of the lamina.
Description
Related application
The application is the people's such as Murali U.S. Patent application No.12/980,424, the part continuation application of " A Method to Form a Device by constructing a support Element on a Thin Semiconductor Lamina ", this application is filed on December 29th, 2010, assignee by the application has, and is incorporated herein by reference thus.According to 35U.S.C. § 119(e), the application requires the priority to the submission date of following application: the U.S. Provisional Patent Application sequence number No.61/510 that is filed on July 21st, 2011,477, " Detection Methods in Exfoliation of Lamina "; Be filed in the U.S. Provisional Patent Application sequence number No.61/510 on July 21st, 2011,476, " Support Apparatus and Methods For Production of Silicon Lamina "; Be filed in the U.S. Provisional Patent Application sequence number No.61/510 on July 21st, 2011,478, " Ion Implantation and Exfoliation Methods "; And the U.S. Provisional Patent Application sequence number No.61/510 that is filed on July 21st, 2011,475, " Apparatus and Methods for Production of Silicon Lamina "; The disclosure of these applications is incorporated this paper into as a reference.
Background technology
Conventional prior art photovoltaic cell comprises the p-n diode; Example is shown in Figure 1.Depletion region forms at p-n junction, creates electric field.Incident photon (incident light is shown by arrow) strikes conduction band with electronics from valence band, creates free electron-hole pair.Be positioned at the electric field of p-n junction, electronics trends towards the n district migration to diode, and the hole causes being called the electric current of photoelectric current to the migration of p district simultaneously.The concentration of dopant in a common zone is higher than other regional concentration of dopant, so this knot is p+/n-knot (as shown in Figure 1) or n+/p-knot.More lightly doped zone is called the base stage of photovoltaic cell, and the more heavily doped zone of films of opposite conductivity is called emitter.Most of charge carriers generate in base stage, and its thick of battery normally.Base stage and emitter form the active area of battery together.
Thereby Implantation is for form cleavage surface (cleave plane) at semi-conducting material is formed on the known method of the laminate that utilizes in the photovoltaic cell.Implantation in these methods and peel off step and can have remarkable result to the laminate quality of producing.Wish to improve the method and apparatus for the production of laminate.
Summary of the invention
The method that is used for producing from executing body laminate comprises that injecting this with ion dose executes body, and in injection period this is executed body and be heated to implantation temperature.Contact, wherein this is executed body and directly contacts with this base assembly with executing body and pedestal (susceptor) components apart.By applying thermal profile and laminate is executed body from this peel off to executing body.Inject and the condition of peeling off can be adjusted so that with the defect free area maximization of laminate.
Description of drawings
In aspect of the present invention described here and the embodiment each can be separately or combination with one another use.Aspect and embodiment are described with reference now to accompanying drawing.
Fig. 1 is the profile of prior art photovoltaic cell.
Fig. 2 A is the U.S. Patent application No.12/026 that is illustrated in the people such as Sivaram to 2D, the profile in the stage during 530 photovoltaic devices forms.
Fig. 3 is the flow chart that the step of exemplary method according to aspects of the present invention is shown.
Fig. 4 A and 4B are the profiles that illustrates according to the laminate formation stages of embodiment of the present invention.
Fig. 5 A and 5B illustrate the profile that the laminate according to embodiment of the present invention separates.
Fig. 6 A and 6B illustrate the profile that the laminate according to embodiment of the present invention separates.
Fig. 7 A and 7C are illustrated in the profile in the stage in forming of the photovoltaic devices with structure metal supporting element.
Fig. 8 A and 8B are perspective section view and the perspective top view of example base assembly of the present invention.
Fig. 9 A and 9B are the top views that the embodiment of pedestal disk of the present invention is shown.
Figure 10 A is the perspective section view of separating chuck (chuck) that embodiment of the present invention are shown with 10B.
Embodiment
Described method and apparatus, wherein independent laminate with in the situation of the bonding or permanent combination of supporting element is not forming and is separating from executing body.Method and apparatus of the present invention comprises with ion dose and injecting at the first surface of executing body, and in injection period this executed body and be heated to implantation temperature.The first surface of executing body contacts discretely with base assembly, and by applying thermal profile and laminate is executed body from this peel off to executing body.Then laminate can separate from executing body.In some embodiments, separation method comprises the surface that deformation force is applied to laminate or executes body.Inject and the condition of peeling off can be according to the material adjustment of executing body so that with the defect free area maximization of thin independent laminate.
The conventional photovoltaic cell that forms from the silicon body comprises that wherein depletion region is at the p-n diode of p-n junction formation, as shown in Figure 1.The silicon that is used for forming photovoltaic cell is executed normally about 200 to 250 micron thick of body.By laminate through epitaxial growth, jointing material or from execute the body cleavage or separate before cause in conjunction with the additive method of laminate to being permanently fixed of supporting element, execute thinner layer plate that body forms from silicon and can be used for forming photovoltaic cell.Usually, the laminate that forms like this must be incorporated into supporting element any consequent photovoltaic cell, thereby or in strip step engagement remove supporting element.In the present invention describing method and equipment, wherein thin, independently laminate can not arrive the bonding or permanent combination of supporting element, and in the situation that do not need before the photovoltaic cell manufacturing to peel off or cleaning from executing body and form and separating.In the present invention, thus inject to form cleavage surface by first surface to executing body.Then the first surface of executing body can be close to supporting element and place.Execution is executed the heating steps that body peels off with laminate from first surface, creates second surface.This technique in the situation that laminate do not occur in conjunction with supporting element.Implantation and the condition of peeling off can have the remarkable result to the quality of the laminate of producing by the method, thereby and can optimization reduce the amount of the physical imperfection that can form in independent laminate.Method for the separation of the thin independent laminate that has peeled off is also described.
The people such as Sivaram submitted on February 5th, 2008, by the U.S. Patent application No.12/026.530 that assignee of the present invention has and is incorporated herein by reference thus, " Method to Form a Photovoltaic Cell Comprising a Thin Lamina " describes the manufacturing of the photovoltaic cell that comprises the film, semiconductor laminate that is formed by non-deposited semiconductor material.With reference to figure 2A, in the people's such as Sivaram embodiment, for example hydrogen and/or helium ion inject semiconductors by first surface 10 and execute body 20 with one or more of gas ions.Ion defines cleavage surface 30 in semiconductor is executed body.As shown in Fig. 2 B, execute body 20 and append to receiver 60 at first surface 10.With reference to figure 2C, annealing steps cause laminate 40 in cleavage surface 30 from executing body 20 cleavage, create second surface 62.In the people's such as Sivaram embodiment, before the cleavage step and afterwards be processed to form in addition the photovoltaic cell that comprises semiconductor laminate 40, these semiconductor laminate 40 thickness are approximately 0.2 and approximately between 100 microns, for example thickness is approximately 0.2 and approximately between 50 microns, for example approximately 1 and approximately between 20 microns, in some embodiments approximately 1 and approximately between 10 microns, or approximately 4 and approximately 20 or approximately 5 and approximately between 15 microns, although any thickness in specified scope all is possible.Fig. 2 D illustrates the structure of putting upside down during operation in some embodiments, and wherein receiver 60 is in the bottom.Receiver 60 can be to have unlike the Breadth Maximum of executing body 10 large 50% and the discrete receiver element of the Breadth Maximum of same widths preferably approximately, such as the U.S. Patent application No.12/057 at Herner, 265, describe in " Method to Form a Photovoltaic Cell Comprising a Thin Lamina Bonded to a Discrete Receiver Element ", this application was submitted on March 27th, 2008, was had and was incorporated herein by reference thus by assignee of the present invention.Replacedly, a plurality of bodies of executing can append to single larger receiver and execute the laminate of body cleavage from each.
Use the people's such as Sivaram method, photovoltaic cell is formed rather than is formed from the wafer of cutting into slices by the film, semiconductor laminate in not by kerf loss or the situation by the manufacturing waste silicon of essential thick battery not, so reduces cost.Identical alms giver's wafer can be used for forming the polylith laminate again, further reduces cost, and can again sell for some other purposes after the peeling off of polylith laminate.
In the present invention, thus by executing body definition cleavage surface with ion-implanted semiconductor and in this cleavage surface the semiconductor laminate being peeled off from executing body, form independent laminate.Laminate has non-binding first surface and the non-binding second surface relative with first surface.After peeling off step, laminate is from executing the body separation and manufacturing photovoltaic cell, and its la m comprises the base of photovoltaic cell.The thickness of laminate can be at approximately 4 microns and approximately between 20 microns.One, two or more layers can form by the first surface at this laminate before incorporating laminate into photovoltaic cell.One, two or more layers can form at the second surface of independent laminate.The thickness of laminate is by the Depth determination of cleavage surface.In many embodiments, the thickness of laminate is approximately 1 and approximately between 10 microns, for example approximately 2 and approximately between 5 microns, and for example approximately 4.5 microns.In other embodiments, the thickness of laminate is approximately 4 and approximately between 20 microns, for example approximately 10 and approximately between 15 microns, and for example approximately 11 microns.Second surface is created by cleavage.Although different flow processs is possible, lamellae is not generally providing in the permanent or bonding fixing situation of supporting element.In most of embodiments, it is from peeling off than Da Shi style such as wafer or crystal ingot and separating.
Forward Fig. 3 to, wherein summarize method of the present invention, thus at first with ion by first surface inject execute body form cleavage surface (step 1, Fig. 3).Injection condition can be adjusted, thereby alleviates the outward appearance physical imperfection (for example crackle, crack, breach, wavefront defective, radial streak, delaminate or its any combination) in the final laminate that forms.Physical imperfection comprises the crack in one embodiment, and method of the present invention provides the independent laminate of the total length in crack wherein less than 100mm.Physical imperfection comprises and can cause in the battery shunting or any defective of performance finishing.The laminate zone that comprises physical imperfection can be equivalent to and be reflected in the zone that can not use in the photovoltaic cell.In the cleavage laminate the maximized injection condition in substantially flawless zone is being included in temperature and/or the pressure that injection period is applied to body thereby can adjust.In some embodiments, implantation temperature can maintain between 25 and 300 ℃, for example between 100 and 200 ℃ or between 120 and 180 ℃.One aspect of the present invention is that implantation temperature can be adjusted, and depends on material and the orientation of executing body.In some embodiments, material is that { 111} oriented silicon and implantation temperature can be between 150 and 200 ℃.In other embodiments, material is that { 100} oriented silicon and implantation temperature can be between 25 and 150 ℃.Method disclosed herein also can be applied to any other orientation that semiconductor is executed body, for example { 110} oriented silicon or { 001}.Implantation temperature can be any silicon orientation and implantation temperature optimization.Adjustable other injection conditions can comprise for example ratio (for example H:He ratio) of dopant dose and ion of initial technological parameter.In some embodiments, injection condition can with the condition of peeling off for example exfoliation temperature, peel off base vacuum degree, the rate of heat addition and/or peel off the pressure combinatorial optimization, so that the area maximization that does not substantially have physical imperfection that will in laminate, exist.In some embodiments, there is not physical imperfection greater than 90% in the laminate surface area of being produced by method of the present invention.
Thereby after inject forming cleavage surface, execute body can touch interim supporting element (Fig. 3, step 2) for example base assembly so that further processing.Usually, executing body, laminate or photovoltaic cell and can append to interim carrier with adhesive or through chemical bond in the various stages of making.When using adhesive, need to other step start peeling off of laminate and/or after dismounting, clean photovoltaic cell and the surface of interim carrier.Replacedly, supporting element can dissolve or otherwise remove and reflect and be not useable for further supporting step.In one aspect of the invention, execute body in the situation that do not have adhesive or permanent combination and supporting element for example base assembly contact discretely, in order to during peeling off, stablize laminate.This contact can be in the direct contact of executing between body and the supporting element, and does not comprise the bonding or integrating step that needs chemistry or physical step, thereby only will execute the interruption contact after pedestal rises of body or laminate.Pedestal can be then in the situation that further do not process again as supporting element.In some embodiments of method of the present invention, injected execute body can with supporting element for example base assembly contact discretely, during peeling off, only be to execute the weight of body or only be in the weight of executing body top base assembly at pedestal executing interaction force between body and the pedestal wherein.In the situation that therein contact is only set up by the weight of executing body, executing body can contact to be orientated downwards and with pedestal with injecting the side.Replacedly, executing body can be with injecting the side upwards and not contacting to be orientated with pedestal.In the case, cover plate can be used for during peeling off and stablize afterwards laminate.In other embodiments contact can further be included in pedestal and execute vacuum power between the body.Vacuum power can be applied to body in order to be temporarily fixed to base assembly in the situation that do not use adhesive, chemical reaction, electrostatic pressure etc. will execute body.
As in the present invention, during the step of peeling off and damage annealing, laminate is touched non-binding supporting element some remarkable advantages are provided.Peel off with the step of annealing and occur in relative high temperature.Execute body if pre-formed supporting element attaching before high-temperature step for example is attached to adhesive or chemicals, it must be exposed to high temperature with laminate as any insert layer so.Many materials cannot easily be stood high temperature, and if the thermal coefficient of expansion of supporting element and laminate (CTE) mismatch, heating and cooling cause damaging the stress of lamellae so.Therefore, non-binding supporting element is independent of combination that potential prevention zero defect layer forms and peels off rules and provide optimized surface for the laminate manufacturing.Annealing can occur before or after executing the body separation at laminate.
Executing body after the contact of base assembly, thus heat can be applied to body in cleavage surface with laminate from executing the body cleavage.The condition of peeling off can optimization thereby (Fig. 3, step 3) is not in order in the situation that have bonding supporting element in the laminate that peels off physical imperfection to be minimized from executing the body cleavage with laminate.Peeling off parameter can be about executing the body optimization especially.Peel off and to occur at ambient pressure.Can apply have one, the change such as two or more heat peel off thermal profile.The condition of the peeling off single rapid heat that can cover greater than 600 ℃ peak value exfoliation temperature waits change in some embodiments.Hot iso-variable velocity rate can be 100 ℃/minute, 200 ℃/minute or larger.The material of pedestal can have and is lower than the thermal capacity of executing the body heat capacity, and can be in final exfoliation temperature tolerance thermal degradation in order to promote to peel off by the method.Final exfoliation temperature can be between 400 and 600 ℃ in other embodiments, and wherein iso-variable velocity rate is any speed, but the surface area of temperature cross-layer plate evenly applies basically.Base assembly can comprise thermal anisotropy's material and promote even thermal profile in order to stride the surface of executing body during peeling off.In some embodiments, execute body and can be transported to the zone of higher temperature so that this heating of executing body is delivered to the other end in even mode from an end of executing body.In one embodiment, execute body and move to higher temperature district (for example band oven) from lower temperature region.Mobile speed can provide in alms giver's temperature rapid change, for example 60 ℃/minute, 200 ℃/minute or larger.
Can by any mode for example by apply the deformation force that leaves the apparent surface who recently forms laminate to the first surface of executing body, will peel off laminate and separate (Fig. 3, step 4) from executing body.Executing in some embodiments body can be out of shape to leave and peel off laminate.Having peeled off in other embodiments laminate can be out of shape to leave and execute body.After peeling off, be execute body first surface independent laminate the surface can with supportive device for example base assembly contact discretely.Contact force can be included in the vacuum power between laminate and the pedestal disk in some embodiments.Contact force can only be to execute the weight of body on laminate in some embodiments.Chuck can be adhered on the surface relative with laminate and execute body.Bonding in some embodiments can be the vacuum power that is applied to body by the porous chuck.Vacuum pressure can apply by chuck, and therefore will execute body is adhered to chuck.Chuck can be coupled to such as deflection arms or transformable disc etc. of bending device.The power that is applied to bending device can be left laminate with executing body deformability.This power can be left laminate, for example edge or other zones with any part distortion of executing body.Distortion can be separated to a part of leaving the laminate surface greater than the distance of 1mm with executing body, discharges and executes the edge of body in order to subsequently laminate is separated fully from executing body.Having separated laminate can remain on the pedestal disk or transfer to different interim or permanent supporting elements so that further processing.Permanent support can be constructed at independent laminate in some embodiments.
An aspect of of the present present invention comprises the technique of making photovoltaic cell from independent laminate, and begins with the body of executing of suitable semi-conducting material.Suitably execute the monocrystalline silicon wafer crystal that body can be any actual (real) thickness, for example from approximately 200 to about 1000 micron thick.Usually wafer has { 100} or { Miller index of 111} is although other orientations can be used.In replaceable embodiment, executing the body wafer can be thicker; Maximum ga(u)ge is only limited by the practicality of wafer-process.Replacedly, glomerocryst or polysilicon can use, and as can being microcrystal silicon, or comprise wafer or the crystal block of other semi-conducting materials of germanium, SiGe or III-V or II-VI semiconducting compound such as GaAs, InP etc.Other materials can use, for example SiC, LiNbO
3, SrTiO
3, sapphire etc.The term polycrystalline is often referred to generation and has the semi-conducting material that size is about a millimeter or larger crystal grain under this background, and the glomerocryst semi-conducting material has the approximately less crystal grain of 1,000 dusts.The crystal grain of crystallite semiconductor materials is very little, for example about 100 dusts.Microcrystal silicon for example can be fully crystalline or can comprise these crystallites in amorphous matrix.It is complete or substantially crystalline understanding polycrystalline or glomerocryst semiconductor.Those skilled in the art recognize that term " monocrystalline silicon " as its use traditionally do not repel have accidental flaw or impurity for example conductivity strengthen the silicon of dopant.
The technique that forms monocrystalline silicon generally causes circular wafers, also can have other shapes but execute body.For photovoltaic application, cylindrical monocrystalline crystal block was processed into the octangle section before the cutting crystal wafer of being everlasting.Wafer also can be for example squares of other shapes.The square wafer has advantages of and is different from circular and the hexagon wafer, and they can not use the slit to align while arriving in the minimum that photovoltaic module is used between them.The diameter of wafer or width can be any standard or customization size.For easy, the disclosure is described monocrystalline silicon wafer crystal and is executed body as semiconductor, but understands executing body and can using of other types and material.
Thereby the ion of preferred hydrogen or hydrogen and helium combination is injected into by first surface and executes body definition cleavage surface, as described previously.The total depth of cleavage surface is determined by the some factors that comprise Implantation Energy.The degree of depth of cleavage surface can be at approximately 0.2 and approximately between 100 microns of distance first surface, for example approximately 0.5 and approximately 20 or approximately between 50 microns, and for example approximately 1 and approximately between 10 microns, approximately 1 or 2 and approximately between 5 or 6 microns, or approximately 4 and approximately between 8 microns.Replacedly, the degree of depth of cleavage surface can be approximately 5 and approximately between 15 microns, for example approximately 11 or 12 microns.
The temperature of Implantation and dosage can be according to the hope degree of depth adjustment of the material that remains to be injected and cleavage surface, in order to the independent laminate that does not substantially have physical imperfection is provided.Ion dose can be that any dosage is for example 1.0 * 10
14With 1.0 * 10
18Individual H/cm
2Between.Implantation temperature can be that any temperature is for example greater than 140 ℃ (for example between 150 and 250 ℃).Injection condition can based on the Miller index of executing body and the energy of ion adjust.For example, have that { monocrystalline silicon of the Miller index of 111} can need and have { one group of injection condition that the monocrystalline silicon wafer crystal of the Miller index of 100} is different.Thereby one aspect of the present invention comprises the adjustment injection condition will not have defective area maximization substantially in laminate.In some embodiments, and greater than the 25 ℃ of for example implantation temperature between 80 ℃ and 250 ℃ combinations, implantation dosage can be less than 1.3 * 10
17Individual H/cm
2In some embodiments, have that { monocrystalline silicon of the Miller index of 111} is executed the temperature that body can be between 150 and 200 ℃ and injected.In some embodiments, have that { monocrystalline silicon of the Miller index of 100} is executed the temperature that body can be between 100 and 150 ℃ and injected.In some embodiments, higher implantation temperature can cause peeling off more uniformly.
With reference to figure 4A, execute body 20 injection surface 10 can with supporting element for example base assembly 400 contact discretely.Base assembly can contact with executing body, keeps being not joined to simultaneously executing body.During peeling off, can only be the weight of executing body in the contact force of executing between body and the base assembly.Replacedly, whole assembly and execute body and can put upside down, and contact force can be that base assembly is in the weight of Shi Tishang.In some embodiments, can be by strengthening at pedestal and the vacuum power executed between the body in the contact force of executing between body and the pedestal.The material character of base assembly can promote substantially not have defective laminate to peel off from executing body.Base assembly 400 can comprise such as monolithic pedestal disk smooth in Fig. 4 A.The surface of base assembly can be included in the material that has the thermal coefficient of expansion substantially the same with executing body (CTE) on the temperature (for example 0 to 1000 ℃) of wide region in some embodiments.Base assembly can comprise and has with to execute the body heat capacity substantially the same or be lower than the material of the thermal capacity of executing the body heat capacity, waits change in order to support greater than the rapid heat of 400 ℃ exfoliation temperature.
In other embodiments shown in Fig. 4 B, thereby base assembly 401 can comprise the polylith dish for providing felicity condition from executing body 20 processing laminates.Can be the vacuum power (as shown in Fig. 4 B) that is applied to the porous pedestal disk 405 of base assembly by vacuum passage 410 at base assembly 401 and the contact force executed between the body in some embodiments.When vacuum power is used for supporting Shi Tishi, pedestal disk 405 can be the permeable any material of porous graphite or vacuum pressure.For example, the material of porous disc 405 can comprise porous graphite, porous boron nitride, porous silicon, porous silicon carbide, laser drill silicon, laser drill carborundum, aluminium oxide, aluminium nitride, silicon nitride or its any combination.Approximately 0 to approximately-100psi(for example 0psi approximately-15psi between) scope in vacuum pressure can use.Base assembly 401 can comprise the first dish 405, and this first dish 405 has the thermal coefficient of expansion similar or substantially the same with the thermal coefficient of expansion of executing body 20 (CTE).It is substantially even that the thermal profile that applies during peeling off in some embodiments can be striden the surface of executing body, thereby promote the success of independent laminate to peel off.Realize even thermal profile for striding the surface of executing body, base assembly can comprise the second dish 415 of contiguous the first dish 405, and wherein the thermal conductivity of the second dish 415 is being parallel to the surface of executing body than preferably higher on perpendicular to the surface of executing body.Thermal anisotropy's material for example pyrolytic graphite well is fit to, thereby promotes in this way basic evenly thermal profile applying at Shi Tishang.Base assembly can be chosen wantonly to comprise and be arranged in the thermal anisotropy and coil adiabatic disks 425 quartz disk for example below 415, in order to for example operate the vacuum manifold thermal insulation by executing body from the power of potential cooling, promotes to peel off keeping of the thermal profile that needs.
Executing body after the contact of base assembly, can use cause substantially not having physical imperfection independent laminate in cleavage surface 30 from executing the thermal expansion rules of body 20 cleavage.The one or two or more heat that the expansion rules can cover one or two or more peak value exfoliation temperature waits change, succeeded by for example less than the hot dipping in period of 1,2,3,4,5 or 6 minute thoroughly (thermal soak).The peak value exfoliation temperature can be between 350 and 900 ℃, for example between 350 and 500 ℃ or between 500 and 900 ℃.Iso-variable velocity rate during the thermal spalling section also can optimization.Hot iso-variable velocity rate can scope from for example 0.1 ℃/second to 20 ℃/second.Peeling off pressure can be ambient pressure or higher.The thermal spalling section can be according to the material of executing body and orientation optimization, in order to form the independent laminate that does not substantially have physical imperfection.
In some embodiments, by applying the thermal profile that peels off that comprises than greater than fast 15 ℃/second single hot iso-variable velocity rate of 600 ℃ final exfoliation temperature, the monocrystalline silicon laminate can be from { body of executing of 111} orientation peels off.The peak value exfoliation temperature can keep 100,50,25 seconds or less.Thermal profile can cover the iso-variable velocity rate between 0.1 and 5 ℃/second in the peak value section temperature between 400 and 600 ℃ in other embodiments, and wherein the surface area of this hot iso-variable velocity rate cross-layer plate is substantially the same.The peak value exfoliation temperature can keep less than 3 minutes, 1 minute or less than 30 seconds.Pedestal can comprise for example the second dish 415 of Fig. 4 B of thermal anisotropy's material, in order to promote that during peeling off striding the surface uniform of executing body applies even thermal profile.
Replacedly, thus peel off can comprise two or more heat etc. change more in check exfoliation process is provided.The changes such as a plurality of heat can adapt to and have 111}, the Miller index of 100} or other orientations execute body.For example, thermal profile can be included in the first hot iso-variable velocity rate between 10 and 20 ℃/second at the peak temperature between 350 and 500 ℃, and to the peak temperature between 600 and 800 ℃ in about the second hot iso-variable velocity rate between 5 and 20 ℃/second.Peak value exfoliation temperature after the changes such as each heat can keep less than 60 seconds, thereby will peel off laminate annealing or separation succeeded by cooling off or further processing.Peel off in some embodiments rules and can under thermal anisotropy's condition, comprise the changes such as two or more heat, thereby more in check exfoliation process is provided.The first heat between 0.5 and 10 ℃/second that other examples of a plurality of hot iso-variable velocity rates are included at the peak temperature between 350 and 450 ℃ waits change, succeeded by to the peak temperature between 450 and 700 ℃ in changes such as about second between 0.1 and 5 ℃/second are warm.Peak value exfoliation temperature after the changes such as each heat can keep less than 10 seconds, thereby will peel off laminate annealing or separation succeeded by cooling off or further processing.Can by with base assembly and/or cleavage execute body moves to different temperatures from the first area of a temperature second area and apply thermal profile.The first temperature can be lower than the second temperature.This technique can realize through band oven or other conveying devices.
Thereby the step of having found to inject the definition cleavage surface causes the damage to the lattice of polycrystalline alms giver wafer.If not repairing so, this damage can not damage battery efficiency.In the disclosure, annealing can peeled off removal of residue reason defective in the laminate.For example repairing great majority in greater than the main body of annealing at laminate of 800,850,900 or 950 ℃ relatively-high temperature injects and damages.After peeling off, independent laminate can contact pedestal, wherein executes body and remains on the top.By applying deformation force to the surface of executing relative with laminate, this is executed body and can be out of shape to leave and peel off laminate.The method can apply abundant gentleness power so that in the situation that do not damage laminate with the alms giver from separating less than the thick laminate of 50 μ m.Then vacuum fixture equipment be placed on the top of executing body so that the execute surface relative with laminate and contact.The first chuck of vacuum fixture equipment can be as covering the whole surface (chuck 515) relative with laminate in Fig. 5, or as in Fig. 6 the part (chuck 615) on the covering surface relative with laminate.The first chuck can be porous chuck (for example porous graphite, porous boron nitride, porous silicon, porous silicon carbide, laser drill silicon, laser drill carborundum, aluminium oxide, aluminium nitride, silicon nitride or its any combination) or comprise vacuum passage.Vacuum applies by the first chuck, and vacuum chuck is executed body.Next, the first chuck deflection.Pressure can be applied to the dorsal part of bending device, and this causes the slight deflection of bending device, and dish is contacted with the body of executing of vacuum chuck.The one side of these vacuum fixture methods is that the edge of executing body at first spurs and leaves laminate, allows air to pour between alms giver and the laminate surface.This action is eliminated the suction that can cause physical imperfection to occur on the surface that recently forms of laminate.
With reference now to Fig. 5 A and 5B,, laminate can leave laminate and occurs by will execute body deformability with bending device from the separation of executing body in some embodiments.Distortion can promote to execute body with the minimized mode of defective that will form and separate from independent laminate in independent laminate.Fig. 5 A is illustrated in the first step in the embodiment of the method, wherein executes body 20 and is coupled to for example vacuum fixture of separating clamp 500.Anchor clamps 500 can comprise the first chuck 515, and the vacuum pressure that this first chuck 515 can be through applying by vacuum passage 525 or any other bonding force support to the surface of executing body 20 520 relative with laminate 40.The first chuck 515 can be coupled to bending device such as flexible arms, deflection arms, flexible disc 535 etc.Bending device can be coupled to hub disk 545 or support arms, pivoting point etc.Peel off laminate 40 and can in base assembly 402, touch discretely pedestal disk 405.Contact force can be applied to pedestal disk 405 through vacuum pressure in addition, and this vacuum pressure applies through vacuum passage 410.Separation is by realizing to will the bending device that execute the surface deflection relative with laminate applying power.The embodiment of this separation is shown in Fig. 5 B, the deflection of flexible disc 535 is shown and consequently executes the distortion that body 20 leaves laminate 40.In this embodiment, normal pressure is applied to the rear side of flexible disc 535 through passage 555, this cause flexible disc 535, the first chuck 515 and clamping execute the slight deformation of body 20.Normal pressure can apply by any measure, for example the air-flow between flexible disc 535 and hub disk 545.Execute body 20 a part can 1 and 3mm of distance laminate or more between distortion, leave the separation that keeps static cleavage laminate 40 at pedestal disk 405 thereby start to execute body.In replaceable embodiment, to execute body and can remain fixed to pedestal disk, the cleavage laminate appends to chuck such as description in the above and separates from executing body.
Fig. 6 A and 6B illustrate the embodiment of separating technology, and wherein separating clamp comprises the first chuck 615, and this first chuck 615 is adhered to the only part on the surface of executing body 20 relative with laminate 40, and to be coupled to be the bending device of rigidity arms 635.At the first chuck 615 with execute bonding between the body 20 and can utilize the vacuum power of carrying by vacuum passage 625.The first chuck 615 can be porous.Rigidity arms 635 can be coupled to pivoting point 645 or through design the rigidity arms be moved away any device of executing body.Laminate 40 can be fixed to or only contact pedestal disk 405.Keep static laminate 40 as leaving at pedestal disk 405 in the part distortion of shown in Fig. 6 B 635 deflections of rigidity arms being left laminate 40 and cause executing body 20.In replaceable embodiment, to execute body and can remain fixed to pedestal disk, the cleavage laminate appends to chuck 615 such as description in the above and separates from executing body.Annealing steps can be in technique any stage carry out, for example at the after separating of independent laminate, in order to repair the damage that lattice is caused of the main body that during injecting, peeling off step or separating step, spreads all over laminate.Annealing can be when laminate remains on position on the base assembly, for example greater than 500 ℃ temperature, for example 550,600,650,700,800,850 ℃ or larger for example about 950 ℃ temperature time of carrying out any amount.Structure can be for example about 650 ℃ of annealing approximately 45 minutes, or about 800 ℃ of annealing approximately ten minutes, or about 950 ℃ of annealing approximately 120 seconds or still less.In many embodiments temperature surpass 850 ℃ at least 60 seconds.In some embodiments, it is favourable removing before laminate is annealed to the temperature that is higher than 700 ℃ and executing body, therefore is the structure and the electronic property that repeat subsequently to protect the alms giver of injection-exfoliation process.
Photovoltaic devices can be from independent lamellae manufacturing after laminate is annealed.Laminate can transfer to temporarily or forever support so that for this reason further processing, as being filed on December 29th, 2010, assignee by the application has, and describe among the U.S. Patent application No.12/980 that is incorporated herein by reference thus, 424 " A Method to Form a Device by Constructing a Support Element on a Thin Semiconductor Lamina ".This can for example finish with vacuum oar (not shown).For affecting this transfer, the vacuum oar can be placed on the second surface, and the vacuum on first surface discharges.After transferring to the vacuum oar, second surface is supported by vacuum, and first surface exposes.With reference to figure 7A, laminate 40 can for example use adhesive to append to interim carrier 50.This adhesive must be tolerated moderate temperature (until approximately 200 ℃) and must be easily to discharge.Proper adhesive comprises the polyester with maleic anhydride and rosin that for example dissolves in hydrocarbon; Or dissolve in polyisobutene and the rosin of cleaning agent.Interim carrier 50 can be any suitable material, such as glass, metal, polymer, silicon etc.After shifting, first surface 10 supports to interim carrier 50 by adhesive, and second surface 62 exposes.
As shown in Fig. 7 B, thus further processing form photovoltaic devices can be as follows.Remove by the etching step that peels off the damage that causes can be for example by applying hydrogen fluorine (HF) acid and nitric acid mixture or carry out with KOH.Can find that annealing is enough to remove all or closely all damaging, and this etching step is unessential.Rare HF solution can be used in the surface; For example 10:1HF removed organic material and residual oxide in two minutes.After this wet technique, amorphous si-layer 72 is in second surface 62 depositions.This layer 72 can be heavily doped silicon and for example can have at the about thickness between 50 and approximately 350 dusts.Fig. 7 B illustrates and is included between second surface 62 and the doped layer 72, and the embodiment of the intrinsic or closely intrinsic amorphous si-layer 74 that both directly contact with this.In other embodiments, layer 74 can omit.In this example, heavy doping silicon layer 72 is the heavy doping N-shapeds with light dope N-shaped laminate 40 same conductivity.Light dope N-shaped laminate 40 includes the base of photovoltaic cell to be formed, and heavy doping amorphous si-layer 72 is provided to the electrical contact of this base.If comprise, layer 74 is fully thin so that it does not stop the electrical connection between laminate 40 and heavy doping silicon layer 72 so.
Transparent conductive oxide (TCO) layer 110 forms and is in direct contact with it at amorphous si-layer 74.The suitable material that is used for TCO110 comprises indium tin oxide and Al-Doped ZnO.This layer can be for example thickness approximately 500 to approximately between 1500 dusts, about 750 dusts for example.This thickness strengthens the reflection that is derived from the reflector that remains to be deposited.In some embodiments, this layer can be basically thinner, for example approximately 100 arrives approximately 200 dusts.Amorphous si-layer 76 also can be applied to second surface after the annealing of laminate.
Seen at the finishing device shown in Fig. 7 C, incident light enters laminate 40 at first surface 10.Through after the laminate 40, there is not the light of absorption to leave laminate 40 at second surface 62, then pass through tco layer 110.For the chance second time that absorbs this light is reflected back into battery in the reflector 12 that tco layer 110 forms, improve usefulness.The conduction reflective metals can be used for reflector 12.Various layers or storehouse can use.In one embodiment, by the very thin chromium layer of tco layer 110 deposition for example approximately 30 or 50 dusts 1,000 to the about silver of 3,000 dusts, form reflector 12 succeeded by approximately to about 100 dusts.In the replaceable embodiment of not drawing, reflector 12 can be to have approximately 1000 to arrive the approximately aluminium of 3000 dust thickness.In next step, layer forms by plating.Conventional plating cannot be carried out on the aluminium lamination, if therefore aluminium is used for reflector 12, thereby layer or multilayer can be added as plating Seed Layer is provided so in addition.In one embodiment, for example at about thick titanium layer between 200 and approximately 300 dusts, succeeded by having for example about Seed Layer of for example cobalt of 500 dusts of any suitable thickness.
Light dope N-shaped stacked 40 comprises the base stage of photovoltaic cell, and heavy doping p-type amorphous si-layer 76 is as the emitter of battery.Heavy doping N-shaped amorphous si-layer 72 is provided to the good electrical contact of battery base.Must be fabricated into the electrical contact on battery two sides.Contact to amorphous si-layer 76 is made via tco layer 112 by grid line 57.Metal supporting element 60 conductions, and via conductive layer 12 and tco layer 110 and base stage contact 72 electrical contacts.
Fig. 7 C illustrates completed photovoltaic module 80, and it comprises photovoltaic cell and metal supporting element 60.In replaceable embodiment, by changing the dopant that uses, heavy doping amorphous si-layer 72 can be used as emitter, and heavy doping amorphous si-layer 76 usefulness are accomplished the contact of base.Amorphous si-layer 72 can directly contact with the first and second surfaces of independent laminate respectively with 76.Incident light (being shown by arrow) drops on the TCO112, enters battery at heavy doping p-type amorphous si-layer 76, enters laminate 40 at first surface 10, and through laminate 40.Reflector 12 is used for some light is reflected back into battery.In this embodiment, receiver element 60 is as substrate.Receiver element 60 and laminate 40 and associated layers form photovoltaic module 80.A plurality of photovoltaic modulies 80 can form and append to supports substrate 90, or replacedly appends to support substrate (not shown).Each photovoltaic module 80 comprises photovoltaic cell.The electrical connection of generally connecting of the photovoltaic cell of module.
Base apparatus
With reference now to Fig. 8 A and 8B,, can comprise one or more pedestal disks such as previously described base assembly in Fig. 4 A and 4B.Base assembly 400 can be as being set in the bottom of pedestal chamber 800 shown in Fig. 8 B, and be configured as independent laminate being peeled off, anneals or separating the support felicity condition.In Fig. 8 A, the first dish 405 can be used for the first surface that body is executed in contact, and is peeling off, separates, annealing or its any Assemble Duration provides separable support for laminate.The first pedestal disk 405 can run through the laminate production technology to be used, or the separator disk that has for the special optimized separating property of step can use.For example, executing body can contact with the first pedestal disk in injection period, contacted with the second pedestal disk during peeling off and contacted with the 3rd pedestal disk between separation period.Optional upper surface (for example unshowned anchor clamps) can be used for contacting with the second surface of executing body relative with first surface.Base assembly 400 for lamellae provides physical support, and also provides the thermal characteristics of peeling off of helping utilize and the rules of annealing after peeling off.In some embodiments, the first pedestal disk 405 can be for example graphite of inert solid.In some embodiments of the present invention, execute body or laminate and touch discretely the permeable base assembly of vacuum.Porous material can be used for the first pedestal disk 405, thereby so that vacuum pressure can will execute body during peeling off or laminate supports to matrix.Porous material can comprise porous graphite, porous boron nitride, porous silicon, porous silicon carbide, laser drill silicon, laser drill carborundum, aluminium oxide, aluminium nitride, silicon nitride or its any combination.
Vacuum can realize by applying negative gauge pressure in the environment (for example air or nitrogen) around, or be realized by direct vacuum pressure through a succession of vacuum passage 410.Helping the selection of the porous pedestal disk material of technological process is important to exfoliation process.Help the material character of exfoliation process to comprise: low confficient of static friction (have and be worth for example CSF of 0.1-0.5), soft (on Mohs' hardness＜10), less than approximately 15 microns average pore diameter, ability that machine flattens (namely, can use conventional mechanical technology/material at these pedestals), low roughness (＜1 μ m roughness), Pingdu (on the main body＜10 μ m waviness), prevent the sufficient conductivity that electrostatic charge occurs between laminate and pedestal, etc.The first pedestal disk 405 can have the CTE substantially the same with the thermal coefficient of expansion of executing body (CTE) in one embodiment.Pedestal disk can have the thermal capacity identical or lower with executing the body heat capacity in other embodiments.Executing in some embodiments body is monocrystalline silicon, and the thermal capacity of pedestal approximately identical with silicon (approximately 19.8J/mol-° of K).
Because these constraints, thereby many engineering ceramicss and other materials can be selected to provide these characteristics for the first pedestal disk 405.In one embodiment, because Ringsdorff
TMGraphite grade R6340 has the similar CTE with silicon CTE, so it can use.For preventing being applied to body or laminate with the during Heat Treatment cross force of peeling off or annealing related, this is important.Since CTE not with the similar graphite of silicon CTE, these temperature changes can cause the wrinkling of laminate or tear.Because the graphite of CTE coupling, laminate can be under remaining on light reservation vacuum or keeping without vacuum during these temperature changes.Body etching (bulk etch) thus can be applied to graphite improves purity.The common aspect etch process is made of 24 hours high-temperature bakings in the vacuum chamber of introducing chloride gas.
In other embodiments of exfoliation process, apply rapid high temperature thermal profile.Wish that in these embodiments tolerance is at the toxic emission of the temperature up to 800 or 900 or 1000 ℃ or the pedestal disk of decomposition.Base material can have the characteristic that prevents from executing the body pollution thing, for example can stand the temperature of technique and atmospheric exposure and does not experience material breakdown.Material can tolerate decomposition inherently, or is used in the material that high temperature serves as the barrier of executing body pollution and applies.For example, rigidity, durable and have the porous silicon carbide of good CTE coupling can be with soft and have low CSF and a coating of highly purified boron nitride.In other embodiments, can utilize porous/laser drill material optimization.The laser drill material allows differentiation between essential (low CSF, softness, the high-purity etc.) of essential (but porosity, CTE, Pingdu/degree of finish) of the volume of anchor clamps and surfacing.For example, provide the interfacial material with hope character of listing to apply at the materials in storage with the character of wishing for matrix in the above.In other embodiments, meeting metal oxide, carbide, nitride, pottery and the high temperature alloy of before mentioning specification is the candidate who uses.The quality of the laminate that the useful improvement of the characteristic of the base material of describing is in the above produced comprises laminate engineering properties, the uniformity and purity.
In another embodiment of the present invention, the uniform temperature section can be applied to body during peeling off.In Fig. 8 A, the second pedestal disk 415 of thermal anisotropy can be close to the first dish 405 to be arranged, is parallel in the plane of executing body than preferred higher thermal conductivity on perpendicular to the direction of executing body, in order to promote applying of even thermal profile thereby be provided at.The uniformity of exfoliation temperature section can be passed through RESEARCH OF PYROCARBON---and therefore a kind of is that the existence of the graphite material of ideal plane heat conductor applies with relatively stride the high heat conduction of cleavage surface perpendicular to cleavage surface.Thermal anisotropy's the second dish can comprise vacuum passage 410, in order to promote vacuum pressure to the distribution of the first pedestal disk 405 bottom sides.Thereby additional features can comprise the surface of being processed into pedestal disk and improve the vacuum passage 455 that vacuum pressure distributes.In the embodiment shown in Fig. 9 A, have and show that work can be used for vacuum pressure is distributed to separation porous pedestal disk by the second pedestal disk 915 of one group of vacuum passage 955 of the concentric ring of radial path connection.Vacuum passage on the periphery 925 of the second pedestal disk 915 can be used for around the periphery distribution vacuum pressure of pedestal disk, in order to a pedestal disk is fixed to another device or dish.
In some embodiments, the heating source for base apparatus can be for example by providing at the indoor embedding thermolamp of pedestal.Heating source can be that the temperature that needs that injection can be provided, peel off or anneal for example is up to any source of 1000 ℃.In other embodiments, heating source can separate be placed from the pedestal chamber, thereby indoor with base assembly and/or execute quartz heating or the inductive heating element of body heating such as but not limited to being arranged in pedestal.
In further embodiment, different vacuum passages can use at pedestal disk, so that will coil 405 and 415 vacuum that are fixed together support to base assembly 400 from executing body vacuum separation.Fig. 8 A diagram has the example base assembly of differential vacuum passage.Support force for a change, pulling can need throttling by the vacuum of pedestal.For will spur by porous material (for example graphite) to the laminate at the first pedestal disk from the effect decoupling of pulling with it, can adopt for this both differential vacuum passages.First group of passage 410 centralized positioning, and these are controlled at laminate from it suction.Second group of vacuum passage 460 and endless belt 470 are positioned at around the first base supports the first and second susceptor edges in position, have nothing to do in in the heart the clamping of Shi Tishang.By adopting this system, may remove laminate and will keep together by base assembly.
In some embodiments, during annealing or exfoliation process laminate is fixed to base assembly thereby apply vacuum power, this can help the cooling of base assembly.Be the high temperature of realizing that annealing process or exfoliation process need, base assembly can be included in executes the diskware that thermal fracture (thermal break) is provided between body and the lower vacuum manifold.The 3rd pedestal disk 475 that serves as thermal fracture can add the base assembly 400 of Fig. 8 A between vacuum manifold (not shown) and the one 405 or the 2 415 pedestal disk.In replaceable embodiment, the first or second pedestal disk can serve as the thermal fracture between vacuum manifold and laminate.In some embodiments of the present invention, the thermal fracture in annealing and/or peeling off can for example be realized at the dish 975 shown in Fig. 9 B by quartz disk.The dish number can be for example one or two, depend on temperature range and the uniformity of hope.Replace quartzyly, can use other heat-insulating materials refractory ceramics for example that can bear annealing temperature.Thereby so that vacuum can be passed through them, and interior and outer endless belt that will the differential vacuum passage separates quartz disk through processing.When using vacuum manifold below the base assembly of water-cooled, this thermal fracture dish can be critical.Thermal fracture can prevent heat from 405 losses of the first pedestal disk, and this can potential promotion realize reaching annealing and/or peel off the temperature that needs.Can promote the character of the thermal fracture pedestal disk 475 of annealing process to comprise: the high diffusion foreign matter of low content (less than 20PPM impurity), with the similar thermal coefficient of expansion of silicon (for example silicon CTE 20% in) and high temperature capabilities (for example 1000 ℃), and low-resistivity.
Although note illustrating with the thermal reactor stack at the base assembly with difference passage shown in Fig. 8 A, difference passage 460/470 and thermal reactor stack 475 features can separately use.Similarly, the thermal reactor stack can support the end face of laminate to utilize under any situation of the temperature operation different from the parts below the thermal fracture element therein.In addition, the individual elements of thermal reactor stack (as the quartz of the thermal fracture that end face is separated from lower surface in different temperatures) can be used individually, use or use the difference configuration with different order.
Separation equipment
In Figure 10 A and 10B, illustrate for will execute the embodiment of body from the separating clamp 100 of laminate separation in the method for Fig. 5 B.In operation, place near separating clamp on the surface of executing body relative with laminate, and peel off (but also not having separative) laminate body and be placed on the base assembly.Replacedly, executing body/laminate can put upside down in this equipment.The separating clamp 100 of Figure 10 A and B relates to and comprises for example graphite of porous disc 115(), bending device for example aluminium or PEEK of flexible disc 135(for example) and rigid support dish 145(aluminium for example) the diskware storehouse.Porous disc 115 is called graphite in the disclosure; Yet, also be possible as describing in the back other materials.Thereby rigid disk 145 has the dorsal part that distribution channel 150 is applied to normal pressure flexible disc 135 therein.Distribution channel for example can be configured to the concentric ring that connected by the radial passage, or is configured to rectilinear grid.Flexible disc 135 can be fixed to rigid disk 145 around its circumference.When normal pressure applied, the core of flexible disc 135 was deflected into and protrudes shape for example shown in Figure 10 B, forces porous disc 115 to follow this shape.Flexible disc can deflection for example approximately 1 or 2 or more millimeters.The operating pressure of device can be any pressure, for example the 0.1-5 bar.This pressure depends on the thickness of material in device.Three demands of flexible disc be bear mechanical strength to its applied pressure, to the biddability of elastic bending (with break opposite) with to the impermeability of pressurized air.In one embodiment, porous layer 115 is that approximately 3mm is thick, and not saturating flexible disc 135 is that approximately 5mm is thick.The other materials of flexible layers 135 selects to comprise ductile metal such as aluminium, thin measuring instrument steel or polymer, elastomeric material or based on the material of rubber.In some embodiments, by between flexible disc and porous disc, applying vacuum, execute the body (not shown) and can support near porous disc 115.Because graphite plate is porous, so vacuum can be applied to through the vacuum inlet to vacuum body in the distribution channel 160 of coiling 115 back, thereby provides even suction by porous disc 115.
Embodiment
Be derived from { the laminate formation of 111} single-crystal donor wafer
{ alms giver's wafer of the Miller index of 111} begins this technique with having.Substantially flat is provided but can has the first surface that some are pre-existing in texture.Execute body and function at 4.0 * 10 of 400keV
16Individual H atom/cm
3Total ion dose inject.Implantation temperature is approximately ℃.This injection causes apart from the cleavage surface of executing the first surface 4.5 μ m of body.Execute body and function N-shaped dopant for example boron be doped to 1 and 3ohm-cm between resistivity.
After injecting, the injection of alms giver's wafer surface contacts with base assembly.Base assembly comprises the pedestal disk of porous graphite.In addition, porous graphite is smoothly processed with 1500 sand paper machines, thereby evenly smooth and level and smooth surface is provided.There is not vacuum pressure to be applied to wafer.In case touch base assembly, apply the thermal spalling section that comprises the change such as two heat.Be applied to that room temperature begins with inferior change order: remain on 400 ℃ to changes such as 400 ℃ 15 ℃/second, at 60 seconds, succeeded by to changes such as 700 ℃ 10 ℃/second.Laminate peels off and by changing to 950 ℃ and keep annealing in 1 minute at 10 ℃/second etc. from alms giver's wafer in this.Then allow the wafer cool to room temperature.
Execute body and separate from laminate in room temperature, and the first surface of laminate (before having executed body) remains fixed to pedestal disk.The vacuum power of-13psi is applied to porous disc in base assembly, laminate is fixed to base assembly.A part of executing body second surface relative with first surface touches the porous disc of the separating clamp that is coupled with vacuum line.The porous disc of separating clamp is coupled to the rigidity arms that comprises pivoting point.When vacuum is applied to the porous disc of separating clamp, cause the rigidity arms to rotate at pivoting point near the part of the diskware of executing body, a part of executing body is raise leave laminate.After the initially-separate of laminate, execute body and manually raise and turn back to process production line from laminate.Thereby laminate further processing forms photovoltaic devices.Separating technology occurs in ambient temperature and pressure.
Be derived from { the laminate of 100} single-crystal donor wafer
{ alms giver's wafer of the Miller index of 100} begins this technique with having.Substantially flat is provided but can has the first surface that some are pre-existing in texture.Execute body and function at 8.0 * 10 of 400keV
16Individual H atom/cm
3Total ion dose inject.Implantation temperature is approximately 160 ℃.This injection causes apart from the cleavage surface of executing the first surface 4.5 μ m of body.
After injecting, the injection of alms giver's wafer surface contacts with base assembly.Base assembly comprises the pedestal disk of porous graphite.In addition, porous graphite is smoothly processed with 1500 sand paper machines, thereby evenly smooth level and smooth surface is provided.Base assembly further comprises the second pedestal disk of thermal anisotropy.Thereby the second pedestal disk comprises pyrolytic graphite and provide thermal anisotropy's material to promote even heat treatment.Be applied to the first pedestal disk by general-13psi vacuum, execute body and be fixed to base assembly.
Apply the thermal spalling section after executing body base assembly is touched, this thermal spalling section covers 2.3 ℃/second hot iso-variable velocity rate of 440 ℃ the first exfoliation temperature that continues 60 seconds, succeeded by to 490 ℃ 0.2 ℃/second the hot iso-variable velocity rate that continues 500 seconds.After peeling off, comprising is to execute the thin independent laminate of the first surface of first surface of body and the second surface relative with this first surface 950 ℃ of annealing 3 minutes.Allow the wafer cool to room temperature.
Execute body and separate from laminate in room temperature, and the vacuum power that applies of the first surface usefulness-13psi of laminate (before having executed body) remains fixed to pedestal disk.A part of executing body second surface relative with the laminate first surface touches the porous disc of the separating clamp that is coupled with vacuum line.Porous disc is coupled to the rigidity arms that comprises pivoting point.When vacuum is applied to porous disc, cause the rigidity arms to rotate at pivoting point near the part of the diskware of executing body, a part of executing body is raise leave laminate.Shi Ticong executes body and manually raises and turn back to process production line.Thereby laminate further processing forms photovoltaic devices.
Various embodiments are provided for clear and complete.Obviously enumerating may embodiment be unpractiaca all.Other embodiments of the present invention are obvious to those skilled in the art when being informed by this specification.The method detailed of making is described at this, but any other method that forms same structure can use, and the result falls within the scope of protection of the present invention simultaneously.The front is described the minority only described in many forms that the present invention can take in detail.For this reason, this detailed description is intended to as an illustration and not conduct restriction.Only following claim comprises whole equivalent way, and intention definition protection scope of the present invention.
Claims (29)
1. method of producing laminate from executing body, described method comprises following steps:
Thereby a. inject at the first surface of executing body with ion dose and form cleavage surface;
B. in injection period the described body of executing is heated to implantation temperature;
C. the described described first surface of executing body is touched discretely the first surface of base assembly, wherein saidly execute the described first surface of body and the described first surface of described base assembly directly contacts;
Thereby d. apply exfoliation temperature and in described cleavage surface laminate is peeled off from the described body of executing to the described body of executing, the wherein said described first surface of executing body comprises the first surface of described laminate;
E. described laminate is separated from the described body of executing; And
F. the combination of adjusting dosage, implantation temperature, exfoliation temperature and peeling off pressure, thus in described laminate, will substantially there be the area of physical imperfection to maximize.
2. method according to claim 1, wherein said base assembly is positioned at described executing below the body, and the wherein said described first surface of executing body only comprises the power that is provided by the described weight of executing body to the described separable contact of the described first surface of described base assembly.
3. method according to claim 1, the wherein said described first surface of executing body comprise to described pedestal to the described separable contact of the described first surface of described base assembly and apply vacuum power.
4. it is basically even that method according to claim 1, wherein said exfoliation temperature section are striden the described described first surface of executing body.
5. method according to claim 1, wherein said exfoliation temperature section comprise with speed of 1 ℃ of per second etc. change to peak temperature between 600 and 1000 ℃ at least.
6. method according to claim 1, the wherein said step that applies exfoliation temperature comprise executes body moves to the second temperature from the zone of the first temperature zone with described, and wherein said the second temperature is higher than described the first temperature.
7. method according to claim 1, wherein said physical imperfection from by wavefront defective, radial streak, delaminate, tear, select hole or its any group who constitutes.
8. method according to claim 1, wherein said implantation temperature is between 80 and 250 ℃.
9. method according to claim 1, the thickness of wherein said laminate is approximately between 1 and 20 micron.
10. method according to claim 1, do not have described physical imperfection greater than 90% in the described surface area of the described first surface of wherein said laminate, and the described surface area of wherein said laminate is substantially equal to the described described surface area of executing the described first surface of body.
11. method according to claim 1, wherein said peeling off at ambient pressure occurs.
12. method according to claim 1 further is included in described laminate is executed the step that the body after separating is reused described pedestal from described.
Can execute the first dish that body contacts with described 13. method according to claim 1, the described first surface of wherein said base assembly comprise, wherein said the first dish comprises vacuum pressure and can permeate the porous material that passes through.
14. method according to claim 13, wherein said the first dish comprises porous graphite, porous boron nitride, porous silicon, porous silicon carbide, laser drill silicon, laser drill carborundum, aluminium oxide, aluminium nitride or silicon nitride or its any combination.
15. method according to claim 13, wherein said the first dish has the first thermal coefficient of expansion and the described body of executing has the second thermal coefficient of expansion, and wherein said the first and second thermal coefficient of expansions are substantially the same.
16. method according to claim 13, wherein said base assembly further comprise the second dish of contiguous described the first dish, and wherein said the second dish is the thermal anisotropy.
17. method according to claim 16, wherein said the second dish comprises pyrolytic graphite.
18. comprising to have, method according to claim 13, wherein said the first dish be lower than the described material of executing the thermal capacity of body.
19. method according to claim 1, wherein described laminate is separated to comprise power is applied to a described part of executing the second surface of body from the described body of executing, wherein said second surface is relative with the described first surface of described laminate, and the wherein said body deformability of executing leaves described laminate.
20. method according to claim 1 wherein described laminate is separated and to comprise a part that power is applied to the described first surface of described laminate from the described body of executing, and the described body of executing is left in the distortion of wherein said laminate.
21. method according to claim 1 further comprises following steps:
A. described laminate is separated from the described body of executing; And
B. make photovoltaic cell, wherein said photovoltaic cell has the first amorphous si-layer of directly contacting with the described first surface of described laminate and the second amorphous si-layer that directly contacts with the second surface of described laminate.
22. a method of producing laminate from executing body comprises:
Thereby a. inject the first surface of executing body with ion dose and form cleavage surface;
B. execute the first surface that body touches base assembly discretely with described, the wherein said described first surface of executing body and described base assembly directly contacts;
C. in described cleavage surface laminate is peeled off from the described body of executing, the wherein said described first surface of executing body comprises the first surface of described laminate; And
D. apply deformation force by described first surface or the described second surface of executing body to described laminate, thereby the described first surface of described laminate or the described described second surface distortion of executing body are separated described laminate from the described body of executing, the wherein said described second surface of executing body is relative with the described described first surface of executing body.
23. method according to claim 22 wherein comprises the described described second surface distortion of executing body:
A. the first chuck is coupled to the described described second surface of executing body, wherein said chuck is coupled to bending device; And
B. apply described deformation force to described bending device, wherein said deformation force leaves described laminate with described bending device and described the first chuck and the described body deformability of executing.
24. method according to claim 22, wherein the described first surface distortion with described laminate comprises:
A. the first chuck is coupled to the described first surface of described laminate, wherein said chuck is coupled to bending device; And
B. apply described deformation force to described bending device, wherein said deformation force leaves the described body of executing with described bending device and described the first chuck and the distortion of described laminate.
25. according to claim 23 with 24 described methods, wherein said the first chuck comprises vacuum pressure can permeate the porous material that passes through, and wherein said method further is included in described the first chuck and the described step that applies vacuum pressure between the body of executing, and wherein said vacuum pressure is so that the described body of executing can be coupled to described the first chuck.
26. method according to claim 25, wherein said porous material is selected from the group who is made of porous graphite, porous boron nitride, porous silicon, porous silicon carbide, laser drill silicon, laser drill carborundum, aluminium oxide, aluminium nitride and silicon nitride.
27. with 24 described methods, further comprise the back of the body dish that appends to described bending device periphery according to claim 23, and the step that wherein applies described deformation force is included in mineralization pressure volume between described bending device and the described back of the body dish.
28. method according to claim 22, wherein with described execute body deformability comprise with 1 and 3mm between a described part of executing body from the described first surface displacement of described laminate.
29. method according to claim 22, further comprise the step of described laminate being transferred to transferring clamp from described base assembly, wherein said transferring clamp comprises vacuum pressure can permeate the porous transfer table that passes through, and the second surface of wherein said laminate contacts discretely with the first surface of described porous transfer table.
Applications Claiming Priority (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/980,424 | 2010-12-29 | ||
| US12/980,424 US8173452B1 (en) | 2010-12-29 | 2010-12-29 | Method to form a device by constructing a support element on a thin semiconductor lamina |
| US201161510475P | 2011-07-21 | 2011-07-21 | |
| US201161510478P | 2011-07-21 | 2011-07-21 | |
| US201161510477P | 2011-07-21 | 2011-07-21 | |
| US201161510476P | 2011-07-21 | 2011-07-21 | |
| US61/510,475 | 2011-07-21 | ||
| US61/510,478 | 2011-07-21 | ||
| US61/510,476 | 2011-07-21 | ||
| US61/510,477 | 2011-07-21 | ||
| PCT/US2011/066195 WO2012092026A2 (en) | 2010-12-29 | 2011-12-20 | A method and apparatus for forming a thin lamina |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103370800A true CN103370800A (en) | 2013-10-23 |
Family
ID=46383810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180062986XA Pending CN103370800A (en) | 2010-12-29 | 2011-12-20 | A method and apparatus for forming a thin lamina |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2659521A4 (en) |
| JP (1) | JP2014506008A (en) |
| KR (1) | KR20140004120A (en) |
| CN (1) | CN103370800A (en) |
| TW (1) | TWI552205B (en) |
| WO (1) | WO2012092026A2 (en) |
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| CN103646990A (en) * | 2013-11-28 | 2014-03-19 | 青岛蓝图文化传播有限公司市南分公司 | Cleavage method |
| CN107108132A (en) * | 2014-11-19 | 2017-08-29 | 康宁股份有限公司 | Peel off the apparatus and method of multilager base plate |
| CN111244015A (en) * | 2020-01-20 | 2020-06-05 | 杭州立昂东芯微电子有限公司 | Wafer de-bonding auxiliary carrying disc, de-bonding machine and de-bonding method |
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| EP2920668B1 (en) * | 2012-11-14 | 2021-11-03 | GTAT Corporation | A mobile electronic device comprising an ultrathin sapphire cover plate |
| WO2015040907A1 (en) | 2013-09-17 | 2015-03-26 | 株式会社村田製作所 | Method for manufacturing vertical-cavity surface-emitting laser |
| JP6687829B2 (en) * | 2015-08-17 | 2020-04-28 | シンフォニアテクノロジー株式会社 | Induction heating device |
| TWI632982B (en) * | 2017-07-03 | 2018-08-21 | 陽程科技股份有限公司 | Plate retaining device |
| TWI749783B (en) * | 2020-09-24 | 2021-12-11 | 鴻績工業股份有限公司 | Air chamber suction module |
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Also Published As
| Publication number | Publication date |
|---|---|
| EP2659521A4 (en) | 2015-05-13 |
| TWI552205B (en) | 2016-10-01 |
| JP2014506008A (en) | 2014-03-06 |
| EP2659521A2 (en) | 2013-11-06 |
| WO2012092026A3 (en) | 2012-10-11 |
| TW201246301A (en) | 2012-11-16 |
| WO2012092026A2 (en) | 2012-07-05 |
| KR20140004120A (en) | 2014-01-10 |
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