JPH08254392A - Method and apparatus for heat treatment of substrate - Google Patents

Method and apparatus for heat treatment of substrate

Info

Publication number
JPH08254392A
JPH08254392A JP7058391A JP5839195A JPH08254392A JP H08254392 A JPH08254392 A JP H08254392A JP 7058391 A JP7058391 A JP 7058391A JP 5839195 A JP5839195 A JP 5839195A JP H08254392 A JPH08254392 A JP H08254392A
Authority
JP
Japan
Prior art keywords
zone
substrate
heat treatment
temperature
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7058391A
Other languages
Japanese (ja)
Inventor
Kazuyuki Harada
和行 原田
Masayuki Wakitani
雅行 脇谷
Original Assignee
Fujitsu Ltd
富士通株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, 富士通株式会社 filed Critical Fujitsu Ltd
Priority to JP7058391A priority Critical patent/JPH08254392A/en
Publication of JPH08254392A publication Critical patent/JPH08254392A/en
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To improve an yield of a heat treatment process and optimize an temperature profile by uniformly changing temperatures of a substrate. CONSTITUTION: In a process of transferring a substrate to be treated to a plurality of heat treatment zones having different temperature conditions E11-E15 in the sequence in order to provide the substrate with a particular thermal history, the heat treatment zones E11-E15 are arranged in a neighboring but thermally-isolated relationship with each other. When a heat treatment is finished in one of the heat treatment zones E11-E14, the substrate is transferred to a next heat treatment zone within a period of time sufficiently short as compared to heat treatment time and are subjected to a next heat treatment.

Description

【発明の詳細な説明】Detailed Description of the Invention
【0001】[0001]
【産業上の利用分野】本発明は、基板に対して特定の熱
処理を加える熱処理方法、及びそのための熱処理装置に
関し、基板上に印刷された厚膜層又は基板自体の焼成な
どに利用される。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment method for applying a specific heat treatment to a substrate, and a heat treatment apparatus therefor, which is used for firing a thick film layer printed on the substrate or the substrate itself.
【0002】一対の基板からなるPDP(プラズマディ
スプレイパネル)は、大画面表示用の薄型表示デバイス
として注目されている。このため、大型のPDPに適し
た製造技術の開発が進められている。
A PDP (plasma display panel) consisting of a pair of substrates has been attracting attention as a thin display device for displaying a large screen. For this reason, development of a manufacturing technique suitable for a large PDP is in progress.
【0003】[0003]
【従来の技術】プラズマディスプレイパネルは、一対の
基板を対向配置して周囲を封止し、内部に放電空間を形
成した表示デバイスである。従来において、プラズマデ
ィスプレイパネルの製造に際しては、基板上への厚膜電
極、誘電体層、隔壁などの形成に、ベルト式焼成装置が
用いられていた。
2. Description of the Related Art A plasma display panel is a display device in which a pair of substrates are arranged opposite to each other and the periphery is sealed to form a discharge space inside. Conventionally, in manufacturing a plasma display panel, a belt-type firing apparatus has been used for forming a thick film electrode, a dielectric layer, a partition wall and the like on a substrate.
【0004】ベルト式焼成装置は、ベルトによって処理
物を搬送しながら焼成するインライン形式の焼成装置で
ある。筒状の焼成炉の内部にはベルトの移動方向に沿っ
て複数のヒーターが並べられており、各ヒーターの温度
制御及び搬送速度の調整によって処理物の温度プロファ
イル(温度履歴)を設定することができる。
The belt type baking apparatus is an in-line type baking apparatus for baking a processed material while conveying it by a belt. Inside the cylindrical baking furnace, multiple heaters are arranged along the belt moving direction, and the temperature profile (temperature history) of the processed product can be set by controlling the temperature of each heater and adjusting the transfer speed. it can.
【0005】[0005]
【発明が解決しようとする課題】ベルト式焼成装置は、
焼成炉の内部に処理物を固定配置するバッチ式焼成装置
と比べて、プラズマディスプレイパネルの量産性の面で
有利である。
The belt type firing apparatus is
This is advantageous in terms of mass productivity of plasma display panels, as compared with a batch type baking apparatus in which a processed material is fixedly arranged inside a baking furnace.
【0006】しかし、ベルト式焼成装置による場合は、
焼成炉内の温度が処理物である基板の搬送方向に沿って
変化するので、すなわち焼成炉内の温度分布方向と基板
面とが平行であるので、基板が大型になるにつれて基板
における搬送方向の前方側と後方側との間の温度差が大
きくなり、熱収縮の影響が顕著になるという問題があっ
た。例えば下層の電極と上層の隔壁との位置関係が基板
面内で不均一になり、そのために表示の高精細化が制限
されていた。
However, in the case of using the belt type firing device,
Since the temperature in the baking furnace changes along the transfer direction of the substrate to be processed, that is, since the temperature distribution direction in the baking furnace and the substrate surface are parallel, the transfer direction of the substrate increases as the size of the substrate increases. There is a problem that the temperature difference between the front side and the rear side becomes large and the effect of heat shrinkage becomes remarkable. For example, the positional relationship between the lower-layer electrode and the upper-layer partition wall becomes non-uniform in the plane of the substrate, which limits the high-definition display.
【0007】また、温度プロファイルの設定のための制
御が複雑であり、温度プロファイルの最適化が難しいと
いう問題もあった。なお、基板の温度を一様に変化させ
る手法として、特開昭61−6875号のように、基板
面と温度分布方向とが直交するいわゆる縦型の焼成炉を
用いることが考えられる。ただし、その場合も処理対象
に応じて温度プロファイルを容易に最適化することはで
きない。
Further, there is a problem that the control for setting the temperature profile is complicated and it is difficult to optimize the temperature profile. As a method of uniformly changing the temperature of the substrate, it is conceivable to use a so-called vertical firing furnace in which the substrate surface and the temperature distribution direction are orthogonal to each other, as in Japanese Patent Laid-Open No. 61-6875. However, even in that case, the temperature profile cannot be easily optimized according to the processing target.
【0008】本発明は、上述の問題に鑑みてなされたも
ので、基板の温度を均等に推移させて熱処理工程の歩留
りを高めるとともに、温度プロファイルの最適化を容易
にすることを目的としている。
The present invention has been made in view of the above problems, and it is an object of the present invention to make the temperature of the substrate transition evenly to increase the yield of the heat treatment process and to facilitate the optimization of the temperature profile.
【0009】[0009]
【課題を解決するための手段】請求項1の発明の基板の
熱処理方法は、図1及び図2に示すように、被処理基板
を温度条件の異なる複数の熱処理ゾーンに順に搬送する
ことによって、特定の温度履歴が得られるように当該被
処理基板の温度を推移させる際に、前記各熱処理ゾーン
を互いに熱的に独立させて隣接配置しておき、1つの当
該熱処理ゾーンにおける熱処理が終了した後に、当該熱
処理の所要時間に比べて十分に短い時間内に前記被処理
基板を次段の前記熱処理ゾーンに移して次の熱処理を行
う方法である。
As shown in FIGS. 1 and 2, a substrate heat treatment method according to a first aspect of the present invention transfers a substrate to be treated to a plurality of heat treatment zones having different temperature conditions in order, When the temperature of the substrate to be processed is changed so as to obtain a specific temperature history, the respective heat treatment zones are arranged thermally adjacent to each other and adjacent to each other, and after the heat treatment in one heat treatment zone is completed. In this method, the substrate to be processed is transferred to the next heat treatment zone and the next heat treatment is performed within a time period sufficiently shorter than the time required for the heat treatment.
【0010】請求項2の発明の方法は、前記熱処理ゾー
ンとして、第1、第2及び第3のゾーンを互いに熱的に
独立させて隣接配置しておき、前記第1のゾーン内で前
記被処理基板を特定温度まで加熱して前記第2のゾーン
に移し、当該第2のゾーン内で一定時間にわたって当該
被処理基板の温度を前記特定温度に保ち、その後に当該
被処理基板を当該第2のゾーンから前記第3のゾーンに
移し、当該第3のゾーン内で当該被処理基板の温度を降
下させる方法である。
According to a second aspect of the present invention, as the heat treatment zone, first, second and third zones are arranged adjacent to each other so as to be thermally independent from each other, and the heat treatment zone is provided in the first zone. The substrate to be processed is heated to a specific temperature and transferred to the second zone, the temperature of the substrate to be processed is maintained at the specific temperature for a certain time in the second zone, and then the substrate to be processed is transferred to the second zone. In the third zone, the temperature of the substrate to be processed is lowered in the third zone.
【0011】請求項3の発明の方法は、前記前記各熱処
理ゾーンの処理時間を互いに同一の時間に設定するもの
である。請求項4の発明の装置は、被処理基板を均等に
特定温度まで加熱するための加熱ゾーンと、前記被処理
基板の温度を前記特定温度に保持するための熱処理ゾー
ンであり、前記加熱ゾーンと隣接し且つ熱的に独立した
恒温ゾーンと、前記被処理基板の温度を前記特定温度か
ら降下させるための熱処理ゾーンであり、前記恒温ゾー
ンと隣接し且つ熱的に独立した冷却ゾーンと、前記加熱
ゾーンから前記恒温ゾーンを経て前記冷却ゾーンへ前記
被処理基板を移動させるためのゾーン間搬送手段と、を
備えてなる。
According to a third aspect of the present invention, the processing time of each of the heat treatment zones is set to the same time. The apparatus of the invention of claim 4 is a heating zone for uniformly heating the substrate to be processed to a specific temperature, and a heat treatment zone for maintaining the temperature of the substrate to be processed at the specific temperature. An adjacent and thermally independent constant temperature zone, a heat treatment zone for lowering the temperature of the substrate to be processed from the specific temperature, a cooling zone adjacent to the constant temperature zone and thermally independent, and the heating And an inter-zone transfer means for moving the substrate to be processed from the zone to the cooling zone via the constant temperature zone.
【0012】請求項5の発明の装置は、前記加熱ゾーン
及び冷却ゾーンが、上下方向に沿って内部温度の変化す
る縦型の熱処理ゾーンであり、前記被処理基板を水平配
置した状態で上下方向に移動させるゾーン内搬送手段を
有した装置である。
According to a fifth aspect of the present invention, the heating zone and the cooling zone are vertical heat treatment zones in which the internal temperature changes along the vertical direction, and the substrate to be processed is horizontally arranged in the vertical direction. It is an apparatus having an in-zone transfer means for moving to.
【0013】[0013]
【作用】各熱処理ゾーン毎に被処理基板内で温度むらが
生じないように温度条件が設定される。被処理基板は、
特定の温度履歴を経るための一連の熱処理に際して、各
熱処理ゾーンでの熱処理が終了する毎に間欠移動の形式
で、現時点で被処理基板を収納している熱処理ゾーンか
ら次段の熱処理ゾーンへ移される。
Function: Temperature conditions are set for each heat treatment zone so that temperature unevenness does not occur in the substrate to be processed. The substrate to be processed is
During a series of heat treatments to go through a specific temperature history, each time the heat treatment in each heat treatment zone is completed, it is moved intermittently from the heat treatment zone currently containing the substrate to be processed to the next heat treatment zone. Be done.
【0014】[0014]
【実施例】図1は本発明の実施に係る焼成装置1の立面
視による模式図である。焼成装置1は、焼成炉11と、
焼成炉11の内部を貫通するワーク搬送用のベルト12
とを有している。焼成炉11の内部は断熱壁などによっ
てベルト12の搬送方向に沿って並ぶ5つのゾーンE1
1〜15に区画されている。ただし、各ゾーンE11〜
15の互いの間には、各ゾーンE11〜15を互いに熱
的に分離し且つベルト12による基板Wの搬送を可能に
するため、エアーカーテンなどの断熱ゲート機構13が
設けられている。また、焼成炉11の入口及び出口にも
断熱ゲート機構13が設けられている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view of a firing apparatus 1 according to an embodiment of the present invention as viewed from an elevation. The firing apparatus 1 includes a firing furnace 11 and
A belt 12 for conveying a work that penetrates the inside of the firing furnace 11.
And have. The inside of the firing furnace 11 has five zones E1 arranged along the conveyance direction of the belt 12 by heat insulating walls and the like.
It is divided into 1 to 15. However, each zone E11 ~
A heat insulating gate mechanism 13 such as an air curtain is provided between the zones 15 so as to thermally separate the zones E11 to 15 from each other and enable the substrate 12 to be transported by the belt 12. Further, the heat insulation gate mechanism 13 is provided at the entrance and the exit of the firing furnace 11.
【0015】各ゾーンE11〜15は、例えば画面サイ
ズが40インチのPDPの基板Wに比べて、温度の均一
化の上で十分に大きい平面積を有している。そして、各
ゾーンE11〜15には、基板Wの温度を部位に係わら
ず均等に推移させ又は保持するためのヒーターHが配置
されている。焼成装置1では各ヒーターHをゾーンE1
1〜15毎に独立に制御することができる。
Each of the zones E11 to 15 has a plane area which is sufficiently large in terms of temperature uniformity as compared with a substrate W of a PDP having a screen size of 40 inches, for example. Further, in each of the zones E11 to E15, a heater H for uniformly changing or maintaining the temperature of the substrate W regardless of the region is arranged. In the firing device 1, each heater H is set to zone E1.
It can be controlled independently for each of 1 to 15.
【0016】次に焼成装置1による焼成の手順を説明す
る。ここでは、低融点ガラスペーストを焼成して誘電体
層を形成するものとする。図2は温度プロファイルの一
例を示す図である。
Next, the procedure of firing by the firing apparatus 1 will be described. Here, it is assumed that the low melting point glass paste is fired to form the dielectric layer. FIG. 2 is a diagram showing an example of the temperature profile.
【0017】低融点ガラスペーストを印刷して乾燥させ
た状態の基板Wを、焼成炉11の外部でベルト12に印
刷面を上方に向けて載置し、ベルト12を一定距離だけ
移動させて第1番目のゾーンE11の中央に素早く配置
する。そして、ゾーンE11内で、基板Wの温度を室温
Trから所定の焼成温度(例えば600℃)T1まで徐
々に加熱する。このとき、所要時間が一定時間tとなる
ようにヒーターHの出力を設定しておく。
The substrate W on which the low-melting-point glass paste has been printed and dried is placed on the belt 12 outside the firing furnace 11 with the printing surface facing upward, and the belt 12 is moved by a predetermined distance. Quickly place it in the center of the first zone E11. Then, in the zone E11, the temperature of the substrate W is gradually heated from the room temperature Tr to a predetermined baking temperature (for example, 600 ° C.) T1. At this time, the output of the heater H is set so that the required time is a fixed time t.
【0018】基板Wの温度が焼成温度T1に達すると、
すなわちゾーンE11での処理が終了すると、直ちにベ
ルト12を移動させて基板WをゾーンE11から次段の
ゾーンE12へ処理時間(一定時間)tよりも十分に短
い時間tx(tx≪t)内に移す。ゾーンE12では、
基板Wの温度を一定時間tにわたって焼成温度T1に保
つ。
When the temperature of the substrate W reaches the firing temperature T1,
That is, when the processing in the zone E11 is completed, the belt 12 is immediately moved to move the substrate W from the zone E11 to the next zone E12 within a time tx (tx << t) sufficiently shorter than the processing time (constant time) t. Transfer. In zone E12,
The temperature of the substrate W is kept at the firing temperature T1 for a certain time t.
【0019】一定時間tが経過してゾーンE12での処
理が終了すると、再びベルト12を移動させて基板Wを
ゾーンE12から次段のゾーンE13へ移す。ゾーンE
13では、一定時間tをかけて基板Wの温度を焼成温度
T1からそれより低い所定の温度T2まで徐々に降下さ
せる。
When the processing in the zone E12 is completed after the lapse of a certain time t, the belt 12 is moved again to move the substrate W from the zone E12 to the next zone E13. Zone E
In 13, the temperature of the substrate W is gradually decreased from the baking temperature T1 to a predetermined temperature T2 lower than the baking temperature T1 over a constant time t.
【0020】ゾーンE13での処理が終了すると、基板
WをゾーンE13から次段のゾーンE14へ移す。ゾー
ンE14では、一定時間tにわたって基板Wの温度を所
定の温度T2に保つ。その後は、基板WをゾーンE14
からゾーンE15へ移し、一定時間tをかけて基板Wを
温度T2からそれより低い温度T3まで徐々に冷却し、
焼成炉11から排出する。
When the processing in the zone E13 is completed, the substrate W is transferred from the zone E13 to the next zone E14. In the zone E14, the temperature of the substrate W is kept at the predetermined temperature T2 for a certain time t. After that, the substrate W is set to the zone E14.
To the zone E15, the substrate W is gradually cooled from the temperature T2 to a lower temperature T3 over a certain time t,
It is discharged from the firing furnace 11.
【0021】このように焼成装置1では、各ゾーンE1
1〜15での処理が終わる毎に間欠的に基板Wを移動さ
せる。つまり、いわゆるタクト送りの形式で各ゾーンE
11〜15の処理を行う。移動時間txは基板Wの温度
変化が無視できるように時間tより十分に短い時間とす
る。上述したように各ゾーンE11〜15の処理の所要
時間を一定時間tに設定することにより、一定時間t毎
に基板Wを焼成炉11に搬入し、多数枚の基板Wについ
て連続的(厳密には間欠的に)に焼成を行うことができ
る。そして、各ゾーンE11〜15において処理中は基
板Wの移動が行われないので、基板Wの温度を部位に係
わらず均等に推移させ又は保持することができる。
Thus, in the firing apparatus 1, each zone E1
The substrate W is intermittently moved every time the processes in 1 to 15 are completed. In other words, each zone E is in the so-called tact feed format.
11 to 15 are performed. The moving time tx is set sufficiently shorter than the time t so that the temperature change of the substrate W can be ignored. As described above, by setting the time required for the processing in each zone E11 to 15 to the constant time t, the substrate W is carried into the baking furnace 11 at constant time t, and a large number of substrates W are continuously (strictly). Can be performed intermittently). Then, since the substrate W is not moved during the processing in each of the zones E11 to E15, the temperature of the substrate W can be uniformly changed or maintained regardless of the region.
【0022】図3は本発明の実施に係る他の焼成装置2
の立面視による模式図である。焼成装置2において、焼
成炉21の内部は断熱壁などによって5つのゾーンE2
1〜25に区画されている。
FIG. 3 shows another firing apparatus 2 according to the present invention.
It is a schematic diagram by an elevation view of. In the firing apparatus 2, the inside of the firing furnace 21 is divided into five zones E2 by heat insulating walls and the like.
It is divided into 1 to 25.
【0023】焼成炉21の入口からみて第1番目のゾー
ンE21、第3番目のゾーンE23、及び第5番目の最
終段のゾーンE25は、上下方向にヒーターHを配列し
た縦型の熱処理ゾーンである。つまり、ゾーンE21,
E23,E25においては、上下方向に沿って内部温度
が変化する温度分布を得ることができる。このようなゾ
ーンE21,E23,E25の内部には、基板Wを水平
に配置した状態で上下方向に移動させるための垂直搬送
機構26,27,28が配置されている。また、ゾーン
E21の下端側には、基板Wを焼成炉21内に搬入する
ための水平搬送機構22が設けられ、ゾーンE25の上
端側には、基板Wを焼成炉21から搬出するための水平
搬送機構25が設けられている。
The first zone E21, the third zone E23, and the fifth final stage zone E25 as viewed from the entrance of the firing furnace 21 are vertical heat treatment zones in which heaters H are arranged in the vertical direction. is there. That is, the zone E21,
At E23 and E25, it is possible to obtain a temperature distribution in which the internal temperature changes along the vertical direction. Inside such zones E21, E23, E25, vertical transfer mechanisms 26, 27, 28 for moving the substrate W in a vertical direction in a state of being horizontally arranged are arranged. A horizontal transfer mechanism 22 for loading the substrate W into the firing furnace 21 is provided on the lower end side of the zone E21, and a horizontal transfer mechanism 22 for loading the substrate W from the firing furnace 21 is provided on the upper end side of the zone E25. A transport mechanism 25 is provided.
【0024】一方、第2番目のゾーンE22及び第4番
目のゾーンE24は、ヒーターHによって基板Wの温度
を一定に保つ恒温ゾーンである。ゾーンE22はゾーン
E21,E23の上端側に設けられ、ゾーンE24はゾ
ーンE22,E25の下端側に設けられている。なお、
焼成装置2は、ゾーンE21からゾーンE23まで基板
Wを搬送する水平搬送機構23と、ゾーンE23からゾ
ーンE25まで基板Wを搬送する水平搬送機構24とを
備えている。
On the other hand, the second zone E22 and the fourth zone E24 are constant temperature zones in which the temperature of the substrate W is kept constant by the heater H. The zone E22 is provided on the upper end side of the zones E21 and E23, and the zone E24 is provided on the lower end side of the zones E22 and E25. In addition,
The baking apparatus 2 includes a horizontal transport mechanism 23 that transports the substrate W from the zone E21 to the zone E23, and a horizontal transport mechanism 24 that transports the substrate W from the zone E23 to the zone E25.
【0025】また、焼成炉21の入口、出口、及び各ゾ
ーンE21〜25の間には、各ゾーンE11〜15を互
いに熱的に分離し且つ基板Wの搬送を可能にするため、
エアーカーテンなどの断熱ゲート機構29が設けられて
いる。各ゾーンE21〜25は、いずれも基板Wに比べ
て温度の均一化の上で十分に大きい平面積を有してい
る。
Further, between the inlet and outlet of the baking furnace 21 and between the zones E21 to 25, the zones E11 to 15 are thermally separated from each other and the substrate W can be transported.
An insulating gate mechanism 29 such as an air curtain is provided. Each of the zones E21 to 25 has a plane area sufficiently larger than that of the substrate W in terms of temperature uniformity.
【0026】焼成装置2の使用に際しては、一定時間t
をかけて基板WをゾーンE21の下端側から上端側へ移
動させて、その間に基板Wを焼成温度T1(図2参照)
まで加熱する。
When the firing apparatus 2 is used, a fixed time t
And the substrate W is moved from the lower end side to the upper end side of the zone E21 while the substrate W is baked at the firing temperature T1 (see FIG. 2).
Heat up to.
【0027】基板Wの温度が焼成温度T1に達すると、
直ちに水平搬送機構23によって基板WをゾーンE21
から次段のゾーンE22へ移す。ゾーンE22では、基
板Wの温度を一定時間tにわたって焼成温度T1に保
つ。
When the temperature of the substrate W reaches the firing temperature T1,
The substrate W is immediately transferred to the zone E21 by the horizontal transfer mechanism 23.
To the next zone E22. In the zone E22, the temperature of the substrate W is kept at the baking temperature T1 for a certain time t.
【0028】一定時間tが経過してゾーンE22での処
理が終了すると、再び水平搬送機構23を用いて基板W
をゾーンE22から次段のゾーンE23へ移す。ゾーン
E23では、一定時間tをかけて基板Wを上端側から下
端側へ移動させて、その間に基板Wの温度を温度T2ま
で降下させる。
When the processing in the zone E22 is completed after the elapse of a certain time t, the horizontal transfer mechanism 23 is used again to return the substrate W.
Is moved from the zone E22 to the next zone E23. In the zone E23, the substrate W is moved from the upper end side to the lower end side over a certain time t, and the temperature of the substrate W is lowered to the temperature T2 during that time.
【0029】ゾーンE23での処理が終了すると、直ち
に基板Wを水平搬送機構24によってゾーンE23から
次段のゾーンE24へ移す。ゾーンE24では、一定時
間tにわたって基板Wを温度T2に保つ。その後は、基
板WをゾーンE24からゾーンE25へ移し、一定時間
tをかけて基板Wを温度T2からそれより低い温度T3
まで徐々に冷却し、焼成炉21から排出する。
When the processing in the zone E23 is completed, the substrate W is immediately moved from the zone E23 to the next zone E24 by the horizontal transport mechanism 24. In the zone E24, the substrate W is kept at the temperature T2 for a certain time t. After that, the substrate W is transferred from the zone E24 to the zone E25, and the substrate W is heated from the temperature T2 to a temperature T3 lower than the temperature T2 for a certain time t.
It is gradually cooled to, and discharged from the firing furnace 21.
【0030】このように焼成装置2においても、各ゾー
ンE21〜25の間の基板Wの移動は間欠的に行われ、
各回の移動時間は基板Wの温度変化が無視できるように
時間tより十分に短い時間である。各ゾーンE21〜2
5の処理の所要時間を一定時間tに設定することによ
り、多数枚の基板Wについて連続的に焼成を行うことが
できる。また、各ゾーンE21〜25は熱的には独立で
あるので、各ゾーンE21〜25の温度制御が容易であ
り、基板Wの大きさや焼成対象に応じて温度プロファイ
ルを最適化することができる。
As described above, even in the baking apparatus 2, the movement of the substrate W between the zones E21 to E25 is performed intermittently,
The moving time of each time is sufficiently shorter than the time t so that the temperature change of the substrate W can be ignored. Each zone E21-2
By setting the time required for the process of No. 5 to the constant time t, it is possible to continuously perform firing on a large number of substrates W. In addition, since the zones E21 to 25 are thermally independent, it is easy to control the temperature of the zones E21 to 25, and the temperature profile can be optimized according to the size of the substrate W and the firing target.
【0031】上述の図1の実施例において、基板Wの移
動中にゾーンE11の急冷却をして内部温度を室温に戻
し、新たな基板WをゾーンE11に搬入したときの基板
内の温度差の発生を防ぐようにしてもよい。
In the embodiment of FIG. 1 described above, the temperature difference in the substrate E when a new substrate W is carried into the zone E11 by rapidly cooling the zone E11 while the substrate W is moving to return the internal temperature to room temperature. May be prevented.
【0032】[0032]
【発明の効果】請求項1乃至請求項3の発明によれば、
基板の温度を均等に推移させて熱処理工程の歩留りを高
めることができるとともに、最適の温度プロファイルの
熱処理を容易に実現することができる。
According to the inventions of claims 1 to 3,
The yield of the heat treatment process can be increased by changing the temperature of the substrate uniformly, and heat treatment with an optimum temperature profile can be easily realized.
【0033】請求項3の発明によれば、複数の被処理基
板に対して順に連続的に熱処理を行うことができ、量産
に適した熱処理を実現することができる。請求項4及び
請求項5の発明によれば、基板の温度を均等に推移させ
ることができるとともに、温度プロファイルを容易に最
適化することができる。
According to the third aspect of the present invention, the plurality of substrates to be processed can be successively subjected to the heat treatment, and the heat treatment suitable for mass production can be realized. According to the inventions of claims 4 and 5, the temperature of the substrate can be made to transition uniformly, and the temperature profile can be easily optimized.
【図面の簡単な説明】[Brief description of drawings]
【図1】本発明の実施に係る焼成装置の立面視による模
式図である。
FIG. 1 is a schematic diagram of an elevational view of a firing apparatus according to an embodiment of the present invention.
【図2】温度プロファイルの一例を示す図である。FIG. 2 is a diagram showing an example of a temperature profile.
【図3】本発明の実施に係る他の焼成装置の立面視によ
る模式図である。
FIG. 3 is a schematic view of another firing apparatus according to an embodiment of the present invention when viewed from the elevation.
【符号の説明】[Explanation of symbols]
1,2 焼成装置(熱処理装置) 12 ベルト(ゾーン間搬送手段) 23 水平搬送機構(ゾーン間搬送手段) 26 垂直搬送機構(ゾーン内搬送手段) E11 ゾーン(第1のゾーン、加熱ゾーン) E12 ゾーン(第2のゾーン、恒温ゾーン) E13 ゾーン(第3のゾーン、冷却ゾーン) E21 ゾーン(第1のゾーン、加熱ゾーン) E22 ゾーン(第2のゾーン、恒温ゾーン) E23 ゾーン(第3のゾーン、冷却ゾーン) t 一定時間 T1 焼成温度(特定温度) W 基板(被処理基板) 1, 2 Baking apparatus (heat treatment apparatus) 12 Belt (zone-to-zone transport means) 23 Horizontal transport mechanism (zone-to-zone transport means) 26 Vertical transport mechanism (in-zone transport means) E11 zone (first zone, heating zone) E12 zone (Second zone, constant temperature zone) E13 zone (third zone, cooling zone) E21 zone (first zone, heating zone) E22 zone (second zone, constant temperature zone) E23 zone (third zone, Cooling zone) t Fixed time T1 Firing temperature (specific temperature) W Substrate (substrate to be processed)

Claims (5)

    【特許請求の範囲】[Claims]
  1. 【請求項1】被処理基板を温度条件の異なる複数の熱処
    理ゾーンに順に搬送することによって、特定の温度履歴
    が得られるように当該被処理基板の温度を推移させるた
    めの方法であって、 前記各熱処理ゾーンを互いに熱的に独立させて隣接配置
    しておき、1つの当該熱処理ゾーンにおける熱処理が終
    了した後に、当該熱処理の所要時間に比べて十分に短い
    時間内に前記被処理基板を次段の前記熱処理ゾーンに移
    して次の熱処理を行うことを特徴とする基板の熱処理方
    法。
    1. A method for changing the temperature of a substrate to be processed so as to obtain a specific temperature history by sequentially transporting the substrate to a plurality of heat treatment zones having different temperature conditions, the method comprising: The respective heat treatment zones are arranged thermally adjacent to each other so as to be adjacent to each other, and after the heat treatment in one heat treatment zone is completed, the substrate to be processed is transferred to the next stage within a time sufficiently shorter than the time required for the heat treatment. 2. The method for heat treating a substrate, comprising the step of moving to the heat treatment zone and performing the next heat treatment.
  2. 【請求項2】前記熱処理ゾーンとして、第1、第2及び
    第3のゾーンを互いに熱的に独立させて隣接配置してお
    き、 前記第1のゾーン内で前記被処理基板を特定温度まで加
    熱して前記第2のゾーンに移し、当該第2のゾーン内で
    一定時間にわたって当該被処理基板の温度を前記特定温
    度に保ち、その後に当該被処理基板を当該第2のゾーン
    から前記第3のゾーンに移し、当該第3のゾーン内で当
    該被処理基板の温度を降下させる請求項1記載の基板の
    熱処理方法。
    2. As the heat treatment zone, first, second and third zones are arranged adjacent to each other so as to be thermally independent from each other, and the substrate to be processed is heated to a specific temperature in the first zone. Then, the temperature of the substrate to be processed is maintained at the specific temperature for a certain time in the second zone, and then the substrate to be processed is moved from the second zone to the third zone. The method for heat treating a substrate according to claim 1, wherein the substrate is moved to a zone and the temperature of the substrate to be processed is lowered in the third zone.
  3. 【請求項3】前記各熱処理ゾーンの処理時間を互いに同
    一の時間に設定する請求項1又は請求項2記載の基板の
    熱処理方法。
    3. The substrate heat treatment method according to claim 1, wherein the treatment times of the respective heat treatment zones are set to be the same as each other.
  4. 【請求項4】被処理基板を均等に特定温度まで加熱する
    ための加熱ゾーンと、 前記被処理基板の温度を前記特定温度に保持するための
    熱処理ゾーンであり、前記加熱ゾーンと隣接し且つ熱的
    に独立した恒温ゾーンと、 前記被処理基板の温度を前記特定温度から降下させるた
    めの熱処理ゾーンであり、前記恒温ゾーンと隣接し且つ
    熱的に独立した冷却ゾーンと、 前記加熱ゾーンから前記恒温ゾーンを経て前記冷却ゾー
    ンへ前記被処理基板を移動させるためのゾーン間搬送手
    段と、を備えてなることを特徴とする熱処理装置。
    4. A heating zone for uniformly heating the substrate to be processed to a specific temperature, and a heat treatment zone for maintaining the temperature of the substrate to be processed at the specific temperature, which is adjacent to the heating zone and has a heat An independent thermostatic zone, a heat treatment zone for lowering the temperature of the substrate to be processed from the specific temperature, a cooling zone adjacent to the thermostatic zone and thermally independent, and from the heating zone to the thermostat An inter-zone transfer means for moving the substrate to be processed to the cooling zone through the zone, and a heat treatment apparatus.
  5. 【請求項5】前記加熱ゾーン及び冷却ゾーンは、上下方
    向に沿って内部温度の変化する縦型の熱処理ゾーンであ
    り、前記被処理基板を水平配置した状態で上下方向に移
    動させるゾーン内搬送手段を有する請求項4記載の熱処
    理装置。
    5. The heating zone and the cooling zone are vertical heat treatment zones in which the internal temperature changes in the vertical direction, and the in-zone conveying means for moving the substrate to be processed in the vertical direction in a horizontally arranged state. The heat treatment apparatus according to claim 4, further comprising:
JP7058391A 1995-03-17 1995-03-17 Method and apparatus for heat treatment of substrate Granted JPH08254392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7058391A JPH08254392A (en) 1995-03-17 1995-03-17 Method and apparatus for heat treatment of substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7058391A JPH08254392A (en) 1995-03-17 1995-03-17 Method and apparatus for heat treatment of substrate

Publications (1)

Publication Number Publication Date
JPH08254392A true JPH08254392A (en) 1996-10-01

Family

ID=13083056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7058391A Granted JPH08254392A (en) 1995-03-17 1995-03-17 Method and apparatus for heat treatment of substrate

Country Status (1)

Country Link
JP (1) JPH08254392A (en)

Cited By (10)

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Publication number Priority date Publication date Assignee Title
JP2005317574A (en) * 2004-04-26 2005-11-10 Kyocera Corp Method of manufacturing solar battery element
JP2006349341A (en) * 2006-08-10 2006-12-28 Koyo Thermo System Kk Continuous heat treatment device
JP2007147264A (en) * 2005-10-26 2007-06-14 Mino Ceramic Co Ltd Continuous type heat treatment method and continuous type heat treat furnace
CN102337594A (en) * 2010-07-20 2012-02-01 光洋热系统株式会社 Continuously diffusion processing device
JP2014506008A (en) * 2010-12-29 2014-03-06 ジーティーエイティー・コーポレーション Method and apparatus for forming thin films
JP2014181400A (en) * 2013-03-21 2014-09-29 Koyo Thermo System Kk Continuous carburization furnace
JP2015073102A (en) * 2014-10-21 2015-04-16 光洋サーモシステム株式会社 Continuous diffusion processing apparatus
KR20180054491A (en) * 2016-01-29 2018-05-24 엘지전자 주식회사 Method for fabricating a solar cell
US10050170B2 (en) 2016-01-29 2018-08-14 Lg Electronics Inc. Method of manufacturing solar cell
US10367115B2 (en) 2016-01-29 2019-07-30 Lg Electronics Inc. Method of manufacturing solar cell

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317574A (en) * 2004-04-26 2005-11-10 Kyocera Corp Method of manufacturing solar battery element
JP4601318B2 (en) * 2004-04-26 2010-12-22 京セラ株式会社 Method for manufacturing solar cell element
JP2007147264A (en) * 2005-10-26 2007-06-14 Mino Ceramic Co Ltd Continuous type heat treatment method and continuous type heat treat furnace
JP2006349341A (en) * 2006-08-10 2006-12-28 Koyo Thermo System Kk Continuous heat treatment device
CN102337594A (en) * 2010-07-20 2012-02-01 光洋热系统株式会社 Continuously diffusion processing device
JP2012028413A (en) * 2010-07-20 2012-02-09 Koyo Thermo System Kk Continuous diffusion processing apparatus
JP2014506008A (en) * 2010-12-29 2014-03-06 ジーティーエイティー・コーポレーション Method and apparatus for forming thin films
JP2014181400A (en) * 2013-03-21 2014-09-29 Koyo Thermo System Kk Continuous carburization furnace
JP2015073102A (en) * 2014-10-21 2015-04-16 光洋サーモシステム株式会社 Continuous diffusion processing apparatus
KR20180054491A (en) * 2016-01-29 2018-05-24 엘지전자 주식회사 Method for fabricating a solar cell
US10050170B2 (en) 2016-01-29 2018-08-14 Lg Electronics Inc. Method of manufacturing solar cell
US10367115B2 (en) 2016-01-29 2019-07-30 Lg Electronics Inc. Method of manufacturing solar cell

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