WO2012092026A3 - A method and apparatus for forming a thin lamina - Google Patents

A method and apparatus for forming a thin lamina Download PDF

Info

Publication number
WO2012092026A3
WO2012092026A3 PCT/US2011/066195 US2011066195W WO2012092026A3 WO 2012092026 A3 WO2012092026 A3 WO 2012092026A3 US 2011066195 W US2011066195 W US 2011066195W WO 2012092026 A3 WO2012092026 A3 WO 2012092026A3
Authority
WO
WIPO (PCT)
Prior art keywords
donor body
lamina
forming
donor
susceptor assembly
Prior art date
Application number
PCT/US2011/066195
Other languages
French (fr)
Other versions
WO2012092026A2 (en
Inventor
Adam KELL
Robert CLARK-PHELPS
Joseph D. Gillespie
Gopal Prabhu
Takao Sakase
Theodore H. Smick
Steve Zuniga
Steve BABABYAN
Original Assignee
Twin Creeks Technologies, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/980,424 external-priority patent/US8173452B1/en
Application filed by Twin Creeks Technologies, Inc. filed Critical Twin Creeks Technologies, Inc.
Priority to CN201180062986XA priority Critical patent/CN103370800A/en
Priority to EP11854117.6A priority patent/EP2659521A4/en
Priority to JP2013547546A priority patent/JP2014506008A/en
Priority to KR1020137017692A priority patent/KR20140004120A/en
Publication of WO2012092026A2 publication Critical patent/WO2012092026A2/en
Publication of WO2012092026A3 publication Critical patent/WO2012092026A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A method for producing a lamina from a donor body includes implanting the donor body with an ion dosage and heating the donor body to an implant temperature during implanting. The donor body is separably contacted with a susceptor assembly, where the donor body and the susceptor assembly are in direct contact. A lamina is exfoliated from the donor body by applying a thermal profile to the donor body. Implantation and exfoliation conditions may be adjusted in order to maximize the defect-free area of the lamina.
PCT/US2011/066195 2010-12-29 2011-12-20 A method and apparatus for forming a thin lamina WO2012092026A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201180062986XA CN103370800A (en) 2010-12-29 2011-12-20 A method and apparatus for forming a thin lamina
EP11854117.6A EP2659521A4 (en) 2010-12-29 2011-12-20 A method and apparatus for forming a thin lamina
JP2013547546A JP2014506008A (en) 2010-12-29 2011-12-20 Method and apparatus for forming thin films
KR1020137017692A KR20140004120A (en) 2010-12-29 2011-12-20 A method and apparatus for forming a thin lamina

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US12/980,424 2010-12-29
US12/980,424 US8173452B1 (en) 2010-12-29 2010-12-29 Method to form a device by constructing a support element on a thin semiconductor lamina
US201161510478P 2011-07-21 2011-07-21
US201161510475P 2011-07-21 2011-07-21
US201161510477P 2011-07-21 2011-07-21
US201161510476P 2011-07-21 2011-07-21
US61/510,476 2011-07-21
US61/510,478 2011-07-21
US61/510,475 2011-07-21
US61/510,477 2011-07-21

Publications (2)

Publication Number Publication Date
WO2012092026A2 WO2012092026A2 (en) 2012-07-05
WO2012092026A3 true WO2012092026A3 (en) 2012-10-11

Family

ID=46383810

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/066195 WO2012092026A2 (en) 2010-12-29 2011-12-20 A method and apparatus for forming a thin lamina

Country Status (6)

Country Link
EP (1) EP2659521A4 (en)
JP (1) JP2014506008A (en)
KR (1) KR20140004120A (en)
CN (1) CN103370800A (en)
TW (1) TWI552205B (en)
WO (1) WO2012092026A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016506099A (en) * 2012-11-14 2016-02-25 ジーティーエイティー コーポレーションＧｔａｔ Ｃｏｒｐｏｒａｔｉｏｎ Portable electronic equipment containing ultra-thin sapphire cover plate
WO2015040907A1 (en) * 2013-09-17 2015-03-26 株式会社村田製作所 Method for manufacturing vertical-cavity surface-emitting laser
CN103646990A (en) * 2013-11-28 2014-03-19 青岛蓝图文化传播有限公司市南分公司 Cleavage method
CN107108132B (en) * 2014-11-19 2021-03-30 康宁股份有限公司 Method for peeling multilayer substrate
JP6687829B2 (en) * 2015-08-17 2020-04-28 シンフォニアテクノロジー株式会社 Induction heating device
TWI632982B (en) * 2017-07-03 2018-08-21 陽程科技股份有限公司 Plate retaining device
CN111244015B (en) * 2020-01-20 2023-07-21 杭州立昂东芯微电子有限公司 Wafer bonding-releasing auxiliary carrier disc, bonding-releasing machine and bonding-releasing method
TWI749783B (en) * 2020-09-24 2021-12-11 鴻績工業股份有限公司 Air chamber suction module

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090197367A1 (en) * 2008-02-05 2009-08-06 Twin Creeks Technologies, Inc. Method to form a photovoltaic cell comprising a thin lamina
US20100159630A1 (en) * 2008-12-18 2010-06-24 Twin Creeks Technologies, Inc. Method for making a photovoltaic cell comprising contact regions doped through a lamina

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07176482A (en) * 1991-05-31 1995-07-14 At & T Corp Method and apparatus for epitaxial growth
JPH08254392A (en) * 1995-03-17 1996-10-01 Fujitsu Ltd Method and apparatus for heat treatment of substrate
JPH10223496A (en) * 1997-02-12 1998-08-21 Ion Kogaku Kenkyusho:Kk Single-crystal wafer and manufacture thereof
JP2000077287A (en) * 1998-08-26 2000-03-14 Nissin Electric Co Ltd Manufacture of crystal thin-film substrate
JP4452789B2 (en) * 1999-09-01 2010-04-21 独立行政法人 日本原子力研究開発機構 Method for producing silicon crystal thin plate and method for producing substrate for photoelectric conversion element
FR2839385B1 (en) * 2002-05-02 2004-07-23 Soitec Silicon On Insulator PROCESS FOR TAKING OFF MATERIAL LAYERS
CN100579333C (en) * 2003-01-23 2010-01-06 东丽株式会社 The manufacture method of member for circuit board, circuit substrate and the manufacturing installation of circuit substrate
TW200607023A (en) * 2004-08-04 2006-02-16 Tien-Hsi Lee A method to fabricate a thin film on a substrate
US20070277874A1 (en) * 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure
CN101467245A (en) * 2006-05-31 2009-06-24 康宁股份有限公司 Thin film photovoltaic structure and fabrication
JP2008062476A (en) * 2006-09-06 2008-03-21 Disco Abrasive Syst Ltd Machining apparatus and chuck table
US9362439B2 (en) * 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
JP5065748B2 (en) * 2007-04-27 2012-11-07 信越化学工業株式会社 Manufacturing method of bonded wafer
JP2008294080A (en) * 2007-05-22 2008-12-04 Sanyo Electric Co Ltd Solar cell and manufacturing method of same
JP5248994B2 (en) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 Method for manufacturing photoelectric conversion device
JP2009283582A (en) * 2008-05-21 2009-12-03 Shin Etsu Handotai Co Ltd Bonded wafer manufacturing method and bonded wafer
WO2010090147A1 (en) * 2009-02-06 2010-08-12 旭硝子株式会社 Method for manufacturing electronic device and separation apparatus used therefor
JP2010244864A (en) * 2009-04-07 2010-10-28 Shin-Etsu Chemical Co Ltd Substrate heating structural body

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090197367A1 (en) * 2008-02-05 2009-08-06 Twin Creeks Technologies, Inc. Method to form a photovoltaic cell comprising a thin lamina
US20090194162A1 (en) * 2008-02-05 2009-08-06 Twin Creeks Technologies, Inc. Method to form a photovoltaic cell comprising a thin lamina
US20100159630A1 (en) * 2008-12-18 2010-06-24 Twin Creeks Technologies, Inc. Method for making a photovoltaic cell comprising contact regions doped through a lamina

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2659521A4 *

Also Published As

Publication number Publication date
KR20140004120A (en) 2014-01-10
TWI552205B (en) 2016-10-01
TW201246301A (en) 2012-11-16
EP2659521A4 (en) 2015-05-13
JP2014506008A (en) 2014-03-06
EP2659521A2 (en) 2013-11-06
WO2012092026A2 (en) 2012-07-05
CN103370800A (en) 2013-10-23

Similar Documents

Publication Publication Date Title
WO2012092026A3 (en) A method and apparatus for forming a thin lamina
EP4009380A3 (en) Controlled ion implantation into silicon carbide
WO2013049216A3 (en) Method for forming diffusion regions in a silicon substrate
WO2010086863A3 (en) Crystalline drug-containing coatings
PH12015500396A1 (en) Heated aerosol-generating device and method for generating aerosol with consistent properties
TW201614738A (en) Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
MY183935A (en) Solar cell production method and solar cell treatment method
EP2221373A4 (en) Expression cassette for lactase dehydrogenase, transformed yeast and method of producing lactic acid
WO2014113779A3 (en) Molds for shaping glass and methods for making the same
EP3540069A3 (en) Biosynthetic pathways and products
JO3139B1 (en) Forming insulated conductors using a final reduction step after heat treating
WO2014095669A3 (en) Method and plant for producing biogas from lignocellulosic biomass
AU2012248333A2 (en) Pluripotent stem cell-derived brown adipocytes, pluripotent stem cell-derived cell aggregate, method for producing same, and cell therapy and medical therapy therefor
IN2014DN10062A (en)
MY188961A (en) High-throughput thermal processing methods for producing high-efficiency crystalline silicon solar cells
EP3868863A4 (en) Cell culture substrate, method for producing cell culture substrate, and method for producing spheroids
WO2011074909A3 (en) Method for forming a selective emitter for a solar cell
EP3569688A4 (en) Cell culture substrate, culture vessel, method for producing cell culture vessel, method for obtaining cells, and method for culturing cells
EP3582307A4 (en) Stainless steel plate substrate of steel plate for fuel cell separator, and method for producing same
WO2014022722A3 (en) Epitaxial growth on thin lamina
WO2011003062A3 (en) Probiotic compositions and processes thereof
WO2012150787A3 (en) Combined stimulation bioreactor and method for cultivating cells while applying stimulation using same
WO2011102680A3 (en) Cd49f promoting proliferation, multipotency and reprogramming of adult stem cells through pi3k/akt/gsk3 pathway
WO2014126940A3 (en) A process for fermenting co-containing gaseous substrates
WO2013027995A3 (en) Process of surface treatment for wafer

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11854117

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2011854117

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2013547546

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20137017692

Country of ref document: KR

Kind code of ref document: A