IN2014DN10062A - - Google Patents

Info

Publication number
IN2014DN10062A
IN2014DN10062A IN10062DEN2014A IN2014DN10062A IN 2014DN10062 A IN2014DN10062 A IN 2014DN10062A IN 10062DEN2014 A IN10062DEN2014 A IN 10062DEN2014A IN 2014DN10062 A IN2014DN10062 A IN 2014DN10062A
Authority
IN
India
Prior art keywords
semiconductor layers
halide
producing
interface
device including
Prior art date
Application number
Inventor
Akhlesh Gupta
Markus Gloeckler
Rick C Powell
Xilin Peng
Jianjun Wang
Zhibo Zhao
Jigish Trivedi
Original Assignee
First Solar Inc
Akhlesh Gupta
Gloeck Ler Markus
Rick C Powell
Xilin Peng
Jianjun Wang
Zhibo Zhao
Jigish Trivedi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc, Akhlesh Gupta, Gloeck Ler Markus, Rick C Powell, Xilin Peng, Jianjun Wang, Zhibo Zhao, Jigish Trivedi filed Critical First Solar Inc
Publication of IN2014DN10062A publication Critical patent/IN2014DN10062A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02474—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)

Abstract

A method for producing apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.
IN10062DEN2014 2012-05-21 2013-05-20 IN2014DN10062A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261649680P 2012-05-21 2012-05-21
PCT/US2013/041836 WO2013177047A1 (en) 2012-05-21 2013-05-20 Apparatus and method for improving efficiency of thin-film photovoltaic devices

Publications (1)

Publication Number Publication Date
IN2014DN10062A true IN2014DN10062A (en) 2015-08-14

Family

ID=48577892

Family Applications (1)

Application Number Title Priority Date Filing Date
IN10062DEN2014 IN2014DN10062A (en) 2012-05-21 2013-05-20

Country Status (5)

Country Link
US (2) US20130327391A1 (en)
EP (1) EP2852969A1 (en)
CN (1) CN104798184A (en)
IN (1) IN2014DN10062A (en)
WO (1) WO2013177047A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10622497B2 (en) * 2012-11-15 2020-04-14 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Inorganic nanocrystal solar cells
US9130113B2 (en) 2012-12-14 2015-09-08 Tsmc Solar Ltd. Method and apparatus for resistivity and transmittance optimization in TCO solar cell films
US9105799B2 (en) * 2013-06-10 2015-08-11 Tsmc Solar Ltd. Apparatus and method for producing solar cells using light treatment
CN104425652B (en) * 2013-08-30 2019-04-05 中国建材国际工程集团有限公司 Method for producing thin-film solar cells
GB2518881A (en) * 2013-10-04 2015-04-08 Univ Liverpool Solar cell manufacturing method
US10121920B2 (en) 2015-06-30 2018-11-06 International Business Machines Corporation Aluminum-doped zinc oxysulfide emitters for enhancing efficiency of chalcogenide solar cell
CN105552158B (en) * 2016-01-08 2017-09-29 四川大学 A kind of applications of nontoxic Dopant Li Cl in cadmium-Te solar battery
CN106784111A (en) * 2016-12-27 2017-05-31 成都中建材光电材料有限公司 A kind of low temperature preparation method of cadmium telluride diaphragm solar battery
CN109801994B (en) * 2019-01-09 2020-11-24 成都中建材光电材料有限公司 Method for improving performance of cadmium telluride cell
CN119368403A (en) * 2024-12-27 2025-01-28 福莱特玻璃集团股份有限公司 A cadmium chloride heat treatment method and device system for cadmium telluride battery

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6798023B1 (en) * 1993-12-02 2004-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film
JPH104205A (en) * 1996-06-14 1998-01-06 Matsushita Denchi Kogyo Kk Compound semiconductor solar battery and manufacture thereof
US8580603B2 (en) * 2010-04-21 2013-11-12 EncoreSolar, Inc. Method of fabricating solar cells with electrodeposited compound interface layers
CN104025252B (en) * 2011-11-18 2018-04-06 第一太阳能有限公司 Provides methods and apparatus for single-step cadmium chloride vapor treatment of photovoltaic modules
US20140261685A1 (en) * 2013-03-15 2014-09-18 First Solar, Inc. Thin film photovoltaic device wtih large grain structure and methods of formation

Also Published As

Publication number Publication date
WO2013177047A1 (en) 2013-11-28
EP2852969A1 (en) 2015-04-01
US20130327391A1 (en) 2013-12-12
CN104798184A (en) 2015-07-22
US20170054052A1 (en) 2017-02-23

Similar Documents

Publication Publication Date Title
IN2014DN10062A (en)
EP3208839A4 (en) Substrate with cooler for power modules and method for producing same
EP3018137A4 (en) Azole silane compound, surface treatment solution, surface treatment method, and use thereof
HUE055979T2 (en) Substrate for power modules, substrate assembly for power modules, and method for producing substrate for power modules
EP3285291A4 (en) Bonded body, substrate for power module with heat sink, heat sink, method for producing bonded body, method for producing substrate for power module with heat sink, and method for producing heat sink
EP3333999A4 (en) Device for predicting amount of photovoltaic power generation, and method for predicting amount of photovoltaic power generation
GB201306607D0 (en) Method for treating an animal substrate
TWI563558B (en) Substrate treatment apparatus and substrate treatment method
EP3206227A4 (en) Heat dissipation substrate and method for manufacturing said heat dissipation substrate
EP3032893A4 (en) Method and apparatus for controlling uplink power
EP3226294A4 (en) Half-bridge power semiconductor module and method for manufacturing same
PL2969243T3 (en) Method for operating a surface treatment installation, set of filter modules and surface treatment installation
IL257352B (en) Energy-efficient high level device, plant and method for the use of thermal energy of solar origin
PL2983864T3 (en) Method and device for the surface treatment of workpieces
PT3369926T (en) Solar thermal power generation system and method for controlling same
PL3169638T3 (en) Method for producing a coated substrate, planar substrate, comprising at least two layers applied by means of heating, and the use of the coated substrate
PL3170363T3 (en) System and method for improving noise performance of multi-zone quasi-resonant inverter induction heater
EP3196929A4 (en) Joined body, substrate for power module provided with heat sink, heat sink, method for manufacturing joined body, method for manufacturing substrate for power module provided with heat sink, and method for manufacturing heat sink
EP3121157A4 (en) Bonded body, substrate for power modules, power module and method for producing bonded body
EP3128535A4 (en) SURFACE TREATMENT METHOD FOR SiC SUBSTRATES, SiC SUBSTRATE, AND SEMICONDUCTOR PRODUCTION METHOD
SG11201607719TA (en) Method and device for the surface treatment of substrates
EP2991413A4 (en) Method and apparatus for uplink fractional power control based on interference
PL2969993T3 (en) Method to generate high lsg low-emissivity coating with same color after heat treatment
EP2971273A4 (en) Sapphire sheets and apparatus and method for producing sapphire sheets with angled heat shields
EP3208274A4 (en) Organosilicon compound, method for producing same and metal surface treatment agent using same