CN103348491A - Method to form device by constructing support element on thin semiconductor lamina - Google Patents
Method to form device by constructing support element on thin semiconductor lamina Download PDFInfo
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- CN103348491A CN103348491A CN2011800629889A CN201180062988A CN103348491A CN 103348491 A CN103348491 A CN 103348491A CN 2011800629889 A CN2011800629889 A CN 2011800629889A CN 201180062988 A CN201180062988 A CN 201180062988A CN 103348491 A CN103348491 A CN 103348491A
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- thin slice
- support element
- amorphous silicon
- permanent support
- wafer
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 56
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
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- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
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- 229910052734 helium Inorganic materials 0.000 description 2
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
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- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
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- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000011387 Li's method Methods 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
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- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to a rigid or semi-rigid pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element; such adhesives may be unable to tolerate processing temperatures and conditions required to complete the device. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal. A device may be formed which comprises the lamina, such as a photovoltaic cell.
Description
Related application
It is the U.S. Patent application the 12/980th of " A Method to Form a Device by Constructing a Support Element on a Thin Semiconductor Lamina " (attorney piece number TwinP050/TCA-059x) that the application requires all titles of submitting on December 29th, 2010 of the application's assignee, No. 424 and be the U.S. Patent application the 12/980th of " Method to Form a Device Including an Annealed Lamina and Having Amorphous Silicon on Opposing Faces " (attorney piece number TWINP057/TCA-059y) in the title that on December 29th, 2010 submitted to, No. 427 priority, and incorporate this two applications accordingly by reference into.
Technical field
The present invention relates to the method at thin wafer structure support component.
Background technology
Traditional prior art photovoltaic cell comprises the p-n diode; In Fig. 1, show example.Form depletion region at p-n junction, generate electric field.Incident photon (by arrow indication incident light) will knock the electronics from the valence band to conductive strips, generate electron hole pair freely.In the electric field on p-n junction, electronics tends to the n-district migration to diode, and the hole produces electric current to the migration of p district simultaneously, is called photoelectric current.Usually, the concentration of dopant in a zone will be than another height, therefore, and in conjunction with being p+/n-knot (showing as Fig. 1) or n+/p-knot.Low-doped zone is called the base stage of photovoltaic cell, and the highly doped zone that conductivity type is opposite is called emitter.In base stage, produce the normally the thickest part of battery of most carrier and it.Base stage and emitter form the active region of battery together.Battery also often comprises the highly doped contact zone that electrically contacts base stage and the highly doped contact zone of conductivity type similarly, thereby improves electric current.In the example that Fig. 1 shows, highly doped contact zone is the n type.
If make extremely thin photovoltaic cell, then it needs structural support.
Summary of the invention
By claims definition the present invention, and any content in these chapters and sections all should not be considered to the restriction to those claims.Usually, the present invention relates to after thin slice under executing the body cutting, form on the surface of thin thin slice the method for permanent support component.
A first aspect of the present invention provides a kind of method of making apparatus, this method comprise provide the wafer with about 50 microns or littler thickness, this thin slice have first surface and with the first surface opposing second surface; The permanent support component of first surface structure at thin slice; With the making photovoltaic cell, wherein this photovoltaic cell comprises this thin slice.
Another aspect of the present invention provides a kind of method of forming device, and this method comprises utilizes ion-implanted semiconductor to execute body, in order to define cut surface; At the cut surface place from executing wafer under the body cutting, wherein this thin slice have first surface and with the first surface opposing second surface; After cutting step, at the permanent support component of first surface structure of this thin slice; With the making photovoltaic cell, wherein this thin slice comprises the base region of this photovoltaic cell.
Can be separately or use each aspect of the present invention described herein and embodiment with being bonded to each other.
Referring now to accompanying drawing preferred aspect and embodiment are described.
Description of drawings
Fig. 1 is the cross-sectional view of prior art photovoltaic cell.
Fig. 2 a-2d is the cross-sectional view in stage of formation of photovoltaic apparatus that shows people's such as Sivaram U.S. Patent application 12/026530.
Fig. 3 a-3d is the cross-sectional view of demonstration according to the stage of the formation of the photovoltaic apparatus of embodiments of the invention.
Fig. 4 is that demonstration is according to the flow chart of the step of the method for aspect of the present invention.
Fig. 5 is that demonstration is according to the flow chart of the step of the method for aspect of the present invention.
Fig. 6 a-6e is the cross-sectional view of demonstration according to the stage of the formation of the photovoltaic apparatus of the metal support element with structure of embodiments of the invention.
Fig. 7 a and 7b are the cross-sectional view of demonstration according to the stage of the formation of the photovoltaic apparatus of the ceramic support element with structure of an alternative embodiment of the invention.
Fig. 8 is that demonstration is according to the cross-sectional view of the photovoltaic apparatus of the ceramic support element with structure of alternate embodiment of the present invention.
Fig. 9 a-9b is the cross-sectional view of demonstration according to the stage of the formation of the photovoltaic apparatus of the polymer support element with structure of an alternative embodiment of the invention.
Figure 10 a-10d is the cross-sectional view in stage of formation of photovoltaic apparatus that shows the support component that comprises structure of the release with less thin thin slice.
Figure 11 a-11d is the cross-sectional view in stage of formation of photovoltaic apparatus that shows the support component that comprises structure of the release with more thin thin slice.
Embodiment
The people's such as Sivaram that submit on February 5th, 2008 title for No. the 12/026530th, the U.S. Patent application of " Method to Form a Photovoltaic Cell Comprising a Thin Lamina " by assignee of the present invention all and be included in this by reference, it describes the making of photovoltaic cell, and this photovoltaic cell comprises the thin wafer with the semi-conducting material formation of non-deposition.With reference to figure 2a, in people's such as Sivaram embodiment, utilize one or more gas ions (for example, hydrogen and/or helium ion), inject semiconductor by first surface 10 and execute body wafer 20.The ion that injects defines semiconductor and executes the interior cut surface 30 of body wafer.Show as Fig. 2 b, will execute body wafer 20 at first surface 10 places and adhere on the receiver 60.With reference to figure 2c, annealing causes at cut surface 30 places from executing thin slice 40 under body wafer 20 cutting, thereby forms second surface 62.In people's such as Sivaram embodiment, before cutting step and other being processed to form afterwards comprise the photovoltaic cell of wafer 40, wherein the thickness of wafer 40 about 0.2 and about 100 microns between, for example about 0.2 and about 50 microns between, for example thickness about 1 and about 20 microns between, in certain embodiments, thickness about 1 and about 10 microns between or between about 4 microns and about 20 microns, or thickness is between about 5 microns and about 15 microns, although any thickness in the scope of appointment all is possible.Fig. 2 d shows the structure of counter-rotating, and wherein receiver 60 is in the bottom, as operating period in certain embodiments.Receiver 60 can be discrete receiver element, it has and is no more than 50% Breadth Maximum than the Breadth Maximum of executing body wafer 10 greatly, and preferably have approximately identical width, as the title of the Herner that submits on March 27th, 2008 for No. the 12/057265th, the U.S. Patent application of " Method to Form a Photovoltaic Cell Comprising a ThinLamina Bonded to a Discrete Receiver Element " (its by the application's assignee all and incorporate into by reference accordingly) described in.Perhaps, a plurality of body wafers of executing can be adhered to single, bigger receiver and execute thin slice under the body wafer cutting from each.
Utilize people's such as Sivaram method, use the film, semiconductor thin slice, and not by kerf loss waste silicon, or the making of the battery by unnecessary thickness forms photovoltaic cell, rather than with the wafer formation of thinly slicing, thereby the minimizing cost.Can reuse the identical body wafer of executing and form composite wafer, further reduce cost, and can be after the coming off of the composite wafer that is used for other application, the identical body wafer of executing of reselling.
For example, by being heated to 500 ° of C or higher temperature, the most easily realize cutting.Have been found that injection can cause damage to the lattice that monocrystalline is executed the body wafer with the step that defines cut surface.If do not repair, this damage can weaken battery efficiency.High relatively annealing temperature (for example, under 900 ° of C, 950 ° of C or higher temperature) will be repaired the most of implant damages in the thin slice body.
Turn to Fig. 3 a, in the present invention, execute body wafer 20 by first surface 10 injections, in order to form cut surface 30.Can place first surface 10 by adjacent vacuum chuck 54.Show as Fig. 3 b, carry out heating steps, and thin slice 40 at the cut surface place from executing the body wafer-separate, thereby form second surface 62.With reference to figure 3a and 3b, notice that during cutting step, the first surface 10 that for good and all will not execute the body wafer adheres on the support component.
During the implantation step of the cut surface 30 that forms Fig. 3 a, for example carry out the annealing under 900 ° of C or higher temperature, in order to repair the damage that the lattice to thin slice 40 causes.Show as Fig. 3 c, after this annealing, can be from vacuum chuck transfer sheet 40, and it is adhered on the interim support component 50.As describing in detail in addition, one or more layers (comprising for example amorphous silicon layer 72, transparent conductive oxide (TCO) layer 110 and reflective metal layer 12) are deposited on the thin slice 40.At the permanent support component 60 of thin slice 40 structures; In the embodiment that shows, directly construct support component at metal level 12, metal level 12 is formed on second surface 62 tops of thin slice 40.If form support component in position, rather than it is provided as the preforming element, think that then support component is by " structure ".Example comprises: by electroplating the metal support element that (for example, by electroplating or electroless plating) forms; By using the ceramic support element that ceramic mixture solidify to form in position then; Or by the polymer of using liquid or semi-liquid form and the polymer support element that solidify to form in position.Can be before the structure of support component 60, on the amorphous silicon layer 72 or above form extra layer.With making enough thick support component 60, so that for thin slice 40 provides mechanical support, under the situation that does not have such support, thin slice 40 is too thin and frangible and can not stand a lot of processing.
Turn to Fig. 3 d, after the structure of support component 60, separate thin slice 40 from interim support component 50.Fig. 3 d shows the structure of counter-rotating, and wherein Gou Zao support component 60 is in the bottom, as among most of embodiment.Deposition of additional layer (as amorphous silicon layer 76 and ITO layer 112), thus photovoltaic cell formed.
In the present invention, then, by a kind of method forming device, described method comprise provide the wafer with about 50 microns or littler thickness, this thin slice have first surface and with the first surface opposing second surface; The permanent support component of first surface structure at thin slice; With the making photovoltaic cell, wherein this photovoltaic cell comprises this thin slice.Thickness can be between about 4 microns and about 20 microns.Can be before the step of the permanent support component of structure, at one of first surface formation, two or more layers of thin slice.In Fig. 4, illustrate this method.
In aspect of the present invention, form a kind of equipment through the following steps: utilize ion-implanted semiconductor to execute body, in order to define cut surface; At the cut surface place from executing wafer under the body cutting, wherein this thin slice have first surface and with the first surface opposing second surface; After cutting step, at the permanent support component of first surface structure of thin slice; With the making photovoltaic cell, wherein this thin slice comprises the base region of this photovoltaic cell.
Though may be different flow processs, provide thin thin slice usually.In most of embodiment, cut thin slice down from bigger object (as wafer or pyriform synthetic cut stone).With after a surface adhesion of thin slice is to interim support, at the permanent support component of opposite face structure.Then, the face that separately adheres to from interim support component.
As in the present invention, after the step of cutting and damage annealing, structure support component 60 provides several significant advantages.The step of cutting and damage annealing takes place under high relatively temperature.If before these high-temperature steps, preformed support component adhered to execute on the body wafer, as being any intervening layer, together with thin slice, it must will be exposed to higher temperature.If thermal coefficient of expansion (CTE) and thin slice mispairing that a lot of materials can not bear high temperature and support component easily, heating and cooling will cause the tension force that can damage thin thin slice.
Further, note two lip-deep highly doped amorphous silicon layers 72 of the power brick sheet-containing 40 of Fig. 3 d and 76.Thin slice 40 is more low-doped than amorphous silicon layer 72 and 76, and will be as the base region of photovoltaic cell.The base region of battery absorbs incident light, and is the place that produces most of charge carriers.Thin slice 40 is extremely thin, and is thin more a lot of than the absorption region of traditional photovoltaic cell.Thereby, for avoiding because again in conjunction with the loss of the charge carrier that causes, the surface 10 of thin slice and 62 Passivation Treatment are particular importances. Amorphous silicon layer 72 and 76 is effective passivation modes, and for extremely thin absorber, their application is favourable.
Yet, amorphous silicon can not be exposed to and carry out cutting and damage the high temperature that annealing needs; Such temperature will cause recrystallized amorphous silicon.By cutting and execution damage annealing, two high-temperature step, before for good and all thin slice being adhered on any support component, two surfaces of thin slice 40 still can approach the deposition of the layer subsequently that can not bear high temperature.Layer like this comprises amorphous silicon layer and for example aluminium or silver, and it will at high temperature tend to be diffused in the silicon, thereby changes the electrical property of battery.
Thereby, instruct a kind of method of making apparatus, this method comprises: the wafer with about 50 microns or littler thickness is provided, this thin slice have first surface and with the first surface opposing second surface; Make wafer be annealed to 850 ° of C or higher temperature; With the making photovoltaic cell, the battery of wherein finishing has first amorphous silicon layer and second amorphous silicon layer that directly contacts second surface of direct contact first surface.In Fig. 5, summed up the step of this method.
First or second amorphous silicon layer comprises the emitter of photovoltaic cell.At least a portion of first amorphous silicon layer is doping to first conductivity type to heavens, and at least a portion with second amorphous silicon layer is doping to second conductivity type relative with first conductivity type to heavens simultaneously.After annealing steps, in certain embodiments, on the first surface of thin slice or above structure permanent support element, wherein, in the battery of finishing, first amorphous silicon layer is placed between the first surface and support component of thin slice.
The structure support component is also avoided the use of adhesive on the surface of thin slice, otherwise will need adhesive that thin slice is adhered on the preformed support component.Be exposed to even the adhesive of low relatively temperature will discharge volatile material during curing process; Volatile material like this will be hunted down between support component and thin slice, thereby cause imperfect and inhomogeneous adhesion.
For the sake of clarity, will provide the detailed example of the photovoltaic module that comprises thin slice, described sheet thickness wherein, after thin slice under executing the body cutting, is constructed support component at thin slice between 0.2 and 100 micron.For the sake of completeness, a lot of materials, condition and step will be described.Yet, should be appreciated that, when the result belongs to category of the present invention, can revise, enlarge or omit a lot of these details.
Example: by electroplating the support component that forms
The body of executing with suitable semi-conducting material begins technology.Suitable execute the monocrystalline silicon piece that body may be any actual (real) thickness, for example, from about 200 to about 1000 micron thickness or thicker.Although can use other directed wafers, wafer generally has＜and 100〉orientation.Can select different crystal orientations, for example, in order to during the implantation step in future, avoid channelling.In the embodiment that substitutes, it may be thicker executing the body wafer; Only the practicality by processing of wafers limits maximum thickness and for example may be 10,000 microns or thicker.Perhaps, can use glomerocryst silicon or polysilicon, as may being microcrystal silicon, or the wafer of other semi-conducting materials or polysilicon block, comprise germanium, SiGe or III-V or II-VI semiconducting compound such as GaAs, InP, etc.Under this background, the term polysilicon refers generally to have the semi-conducting material that size approximately is millimeter or bigger particulate, and the glomerocryst silicon semiconductor material has less particulate, about 1,000 dusts simultaneously.The particulate of crystallite semiconductor materials is very little, for example about 100 dusts.For example, microcrystal silicon may be fully transparent, or can comprise these microcrystals in [amorphous.Should be appreciated that polysilicon or glomerocryst Si semiconductor are fully or transparent substantially.It is apparent to those skilled in the art that not get rid of as normally used term " monocrystalline silicon " to have accidental defective or the silicon of impurity, the alloy that strengthens as conductivity.
The technology that forms monocrystalline silicon produces circular wafer usually, but executing body also can have other shapes.For photovoltaic application, before cut crystal, often cylindrical monocrystalline silico briquette being processed into cross section is octangle or plan square.Wafer may be other shapes also, as square.The square wafer has advantage, and is different with circle or hexagon wafer, can arrange them to have minimum useless gap edge-to-edge between them on photovoltaic module.The diameter of wafer or width may be any standard or customization size.For the sake of simplicity, this discussion will be described monocrystalline silicon piece and execute the application of body as semiconductor, but should be appreciated that, can use the body of executing of other types and material.
With reference to figure 6a, executing body wafer 20 is silicon single crystal wafers, and it is doping to first conductivity type with hanging down moderate.This example will be described the wafer 20 that relatively low n-mixes, but should be appreciated that, in this and other embodiment, and the type dopant of can reversing.Wafer 20 can be doping to about 1 * 10
15With about 1 * 10
18Atoms of dopant/cm
3Between concentration, for example, about 1 * 10
17Atoms of dopant/cm
3For example, executing body wafer 20 may be solar energy rank silicon or semiconductor rank silicon.
In following step, as describing in the early time, ion (the preferably combination of hydrogen or hydrogen and helium) is injected wafer 20 by first surface 10, thereby define cut surface 30.This instruction of injecting below available is carried out: the people's such as Parrill that submit on May 16th, 2008 title is No. the 12/122108th, the U.S. Patent application of " Ion Implanter for Photovoltaic Cell Fabrication "; Or the people's such as Ryding that submit on June 30th, 2009 title is No. the 12/494th, 268, the U.S. Patent application of " Ion Implantation Apparatus and a Method for Fluid Cooling "; Or the people's such as Purser that submit on November 19th, 2009 title is the U.S. Patent application the 12/621st of " Method and Apparatus for Modifying a Ribbon-Shaped Ion Beam ", No. 689, these the application by assignee of the present invention all and incorporate into by reference accordingly.Aggregate depth by Several Factors mensuration cut surface 30 comprises the injection energy.The degree of depth of cut surface 30 can be between first surface 10 about 0.2 and about 100 microns, for example, about 0.5 and about 20 or about 50 microns between; For example, about 1 and about 10 microns between, between about 1 or 2 micron and about 5 or 6 microns, or about 4 and about 8 microns between.Perhaps, the degree of depth of cut surface 30 can about 5 and about 15 microns between, for example, about 11 or 12 microns.
Can form texture (not showing) at first surface 10 places, so that minimum reflected.A kind of method that is used to form favourable bas-relief texture is that the people's such as Li that on March 23rd, 2010 submitted to title is the U.S. Patent application the 12/729th of " Creation of Low-Relief Texture for a Photovoltaic Cell ", open in No. 878, this application by assignee of the present invention all and incorporate into by reference accordingly.People's such as Li method comprises polished surface, but its induction pressure, thus tend to be provided as epipole for the crystallography selective etch.
Turn to Fig. 6 b, after the texture etching, can close on vacuum chuck 54 and place first surface 10, and vacuum application is in being supported in the suitable locational body wafer 20 of executing.For example, can and execute body wafer 20 with vacuum chuck 54 is enclosed in the quartzy covering.
With reference to figure 6c, hot step causes at the cut surface place from executing body wafer cutting lower mono-crystalline silicon thin slice 40.In this example, realize cutting by peeling off, for example, this can about 350 and about 650 ° of C between temperature under (for example, under about 550 ° of C) realize.Usually, under higher temperature, more promptly peel off.During cutting, can be attached to and to press to the flat board of the piston of vacuum chuck 54 and exert pressure executing body wafer 20 by utilization.Can be applied to about 1 pressure to about 100psi scope, for example 40psi.Measure the thickness of thin slice 40 by the degree of depth of cut surface 30.In a lot of embodiment, the thickness of thin slice 40 about 1 and about 10 microns between, for example, about 2 and about 5 microns between, for example, about 4.5 microns.In other embodiments, the thickness of thin slice 40 about 4 and about 20 microns between, for example, about 10 and about 15 microns between, for example, about 11 microns.Form second surface 62 by cutting.
Can carry out annealing steps, in order to repair during implantation step the damage that the lattice to the main body that spreads all over thin slice 40 causes.At thin slice 40 during vacuum chuck 54 remains on the appropriate location, can be for example at 500 ° of C or higher temperature (for example, at 550,600,650,700,800,850 ° of C or higher temperature), under about 950 ° of C or higher temperature, carry out annealing.For example, can under about 650 ° of C, structure be annealed about 45 minutes, or about 10 minutes of annealing under about 800 ° of C, or under about 950 ° of C annealing 120 seconds or time still less.In a lot of embodiment, this temperature surpasses 900 ° of C, and the time is at least 60 seconds.
Next, remove thin slice 40 from vacuum chuck 54.For example, can utilize vacuum blade (not showing) to finish this operation.In order to influence this transfer, the vacuum blade is placed on the second surface 62, discharge the vacuum on the first surface 10 simultaneously.After transferring to the vacuum blade, support second surface 62 by vacuum, expose first surface 10 simultaneously.With reference to figure 6d, from the vacuum blade thin slice 40 is transferred to interim carrier 50 then.For example, utilize adhesive that it is adhered on the interim carrier 50.This adhesive must bear moderate temperature (can reach about 200 ° of C) and must be able to easily discharge.Suitable adhesive comprises, and for example, has the polyester of maleic anhydride and resin, and it is that hydrocarbon is soluble; Or having the polyester of polyisobutene and resin, it is that cleaning agent is soluble.Interim carrier 50 can be any suitable material, for example, and glass, metal, polymer, silicon, etc.After shifting, first surface 10 will be attached to interim carrier 50 by adhesive, expose second surface 62 simultaneously.
For example, mixing that can be by hydrofluoric acid (HF) and nitric acid or utilize KOH to carry out and remove by the etching step that peels off the damage that causes.Can find that annealing is enough to remove all or nearly all damage, and this etching is unwanted.At bottom line, organic material and the remaining oxide on the HF solution removal surface of dilution will be utilized; For example, use 10:1HF to carry out two minutes clear operation.After this wet method, amorphous silicon layer is deposited on the second surface 62.This layer 72 be highly doped silicon and for example can have about 50 and about 350 dusts between thickness.Fig. 6 d shows an embodiment, its be included between first surface 10 and the doped layer 72 and with the two directly contact intrinsic or intrinsic amorphous silicon layer 74 almost.In other embodiments, can omit layer 74.In this example, highly doped silicon layer 72 is highly doped n types, has identical conductivity type with low-doped n type thin slice 40.Low-doped n type thin slice 40 comprises the base region of the photovoltaic cell that will form, and highly doped amorphous silicon layer 72 provides and the electrically contacting of this base region.If involved, layer 74 is enough thin, makes it not hinder the electrical connection between thin slice 40 and the highly doped silicon layer 72.
On amorphous silicon layer 74 and directly contact amorphous silicon layer 74 and form tco layers 110.The suitable material that is used for TCO110 comprises the zinc oxide that indium tin oxide and aluminium mix.For example, the thickness of this layer can be about 500 between about 1500 dusts, and for example, about 750 dusts are thick.This thickness will strengthen from the reflection in the reflector that will deposit.In certain embodiments, this layer can be thinner substantially, and for example, about 100 to about 200 dusts.
As will be seen, in the equipment of finishing, incident light will enter thin slice 40 at first surface 10 places.Through after the thin slice 40, there is not absorbed light to leave thin slice 40 at second surface 62 places, pass through tco layer 110 then.The reflector 12 that forms at tco layer 110 reflects back into this light in the battery, in order to obtain absorbed chance for the second time, thereby improves efficient.Conduction, reflective metals can be used for reflector 12.Can use various layer or pile up.In one embodiment, by at the extremely thin chromium layer of tco layer 110 depositions (for example, about 30 or 50 dusts are to about 100 dusts), be about 1000 silver to about 3000 dusts afterwards, form reflector 12.In the embodiment that substitutes (not diagram), reflector 12 can be aluminium, and it has about 1000 thickness to about 3000 dusts.In next step, will form layer by electroplating.Can not carry out traditional plating at aluminium lamination, therefore, if aluminium is used to reflector 12, then must add extra layer, so that the Seed Layer that is provided for electroplating.In one embodiment, for example, for example add about 200 and the thickness of about 300 dusts between titanium layer, be Seed Layer (for example, cobalt) afterwards, it can have any suitable thickness, for example, about 500 dusts.
Reflector 12(in this embodiment chromium/silver pile up) on, by electroplate forming metal support element 60.In order to form metal support element 60 by electroplating, interim carrier 50 is immersed in the electrolysis fluid cylinder with relevant layer with thin slice 40.Electrode is attached to reflector 12, and electric current is through electrolyte.12 ions that accumulate from the electrolysis fluid cylinder in the reflector, thus metal support element 60 formed.For example, metal support element 60 can be the alloy of nickel and iron.Iron is more cheap, and the thermal coefficient of expansion of the thermal coefficient of expansion better matching silicon of nickel, thereby during step afterwards, reduce stress.The thickness of metal support element 60 can with the expectation the same.Metal support element 60 should be enough thick, in order to provide structural support for the photovoltaic cell that will form.Thicker support component 60 is not flexible.In contrast, minimum thickness reduces cost.Those skilled in the art will select suitable thickness and iron: the nickel ratio, so that these focus of balance.For example, thickness can about 25 and about 100 microns between, for example, about 50 microns.In certain embodiments, Fe-Ni alloy is included between about 55% and about 65% the iron, for example, and 60% iron.
Turn to Fig. 6 e, after the structure of metal support element 60, removable interim carrier 50, thus expose first surface 10.Fig. 6 e shows the structure of counter-rotating, and wherein metal support element 60 is in the bottom, as its during operation.Separate thin slice 40 from interim support component 50.In certain embodiments, heating for example will cause that to about 225C adhesive is softening, thereby help to remove.For example, utilizing cleaning agent is that first surface 10 is cleared up in rinsing afterwards.In some cases, can use solvent, as light carving rubber stripper.Also utilize identical method to clear up interim support component 50, and it is utilized subsequently again.
After cleaning, deposited amorphous silicon layer on first surface 10.This layer 76 is highly doped silicon and for example, thickness can about 50 and about 350 dusts between.Fig. 6 e shows an embodiment, and it comprises between first surface 62 and the doped layer 76 and directly contacts the intrinsic of the two or intrinsic amorphous silicon layer 78 almost.In other embodiments, can omit layer 78.In this example, highly doped silicon layer 76 is highly doped p-types relative with the conductivity type of low-doped n type thin slice 40, and serves as the emitter of photovoltaic cell.If be included, layer 78 is enough thin, makes it not hinder the electrical connection between thin slice 40 and the highly doped silicon layer 76.
On amorphous silicon layer 76 and directly contact amorphous silicon layer 76 and form transparent conductive oxides (TCO) layer 112.The suitable material that is used for TCO112 comprises the zinc oxide of indium tin oxide and aluminium doping.For example, the thickness of this layer can be about 700 between about 1800 dusts, and for example, about 900 dusts are thick.In certain embodiments, the layer of refractive index between the refractive index of amorphous silicon layer 76 and tco layer 112 forms at amorphous silicon layer 76, title as the people such as Liang that submit on September 30th, 2010 is the U.S. Patent application the 12/894th of " A Semiconductor with a Metal Oxide Layer Having Intermediate Refractive Index ", described in No. 254, this application by the application's assignee all and incorporate into by reference accordingly.
For example, can form metal wires 57 at tco layer 112 by screen printing, for example, the metal wire of silver slurry, and under low relatively temperature (for example approximately 180-250 ° of C) with its curing.
Described a kind of method of making apparatus, this method comprises provides the monocrystalline silicon wafer that has less than about 50 micron thickness; This wafer is adhered on the interim carrier; By electroplate on the thin slice or above form metal support element; Separate thin slice and metal support element from interim carrier; With the making photovoltaic cell, wherein this thin slice comprises the base region of this photovoltaic cell.
Formed photovoltaic cell, it comprises low-doped n type thin slice 40, and this thin slice comprises the base stage of battery; With highly doped p-type amorphous silicon layer 76, it serves as the emitter of battery.Highly doped n type amorphous silicon layer 72 will provide the good electrical contact with the base region of battery.Must the two sides of battery be electrically contacted.Through tco layer 112, undertaken and the contacting of amorphous silicon layer 76 by grid line 57.Metal support element 60 is conducted electricity, and electrically contacts with base contact 72 through conductive layer 12 and tco layer 110.
Fig. 6 e shows the photovoltaic module of finishing 80, and it comprises photovoltaic cell and metal support element 60.In the embodiment that substitutes, by changing the alloy that uses, highly doped amorphous silicon layer 72 can serve as emitter, and highly doped silicon layer 76 serves as the contact to base region.Incident light (being indicated by arrow) is fallen on the TCO112, and 76 places enter battery at highly doped p-type amorphous silicon layer, and 10 places enter thin slice 40 at first surface, and pass thin slice 40.Reflector 12 will be for some light is reflected back into battery.In this embodiment, receiver element 60 serves as substrate.Receiver element 60 forms photovoltaic module 80 with thin slice 40 and relevant layer.Can form a plurality of photovoltaic modulies 80, and it is adhered on the support substrates 90 or, alternatively, support on the lining top (not showing).Each photovoltaic module 80 all comprises photovoltaic cell.Usually, with the photovoltaic cell of form electrical connection module of series connection.
In the embodiment that has just described, before electroplating, carry out veining.In other embodiments, can after electroplating, carry out veining.People's such as Li veining method need be considered in order to introduce the polishing step of surface stress, and it is formed for etched nucleating point.When after electroplating, carrying out veining, can find, the stress that is caused by plating can make the polishing step unnecessary, and utilizes the etching step of the optionally timing of etchant (as TMAH or KOH) can be enough to form to have less than one micron the peak cone to the paddy height.
Example: ceramic support element
Can form the support component of structure with various materials by various technologies.In the embodiment that substitutes, support component is ceramic.The making of ceramic support element is that the people's such as Agarwal that on June 30th, 2010 submitted to title is the U.S. Patent application the 12/826th of " A Formed Ceramic Receiver Element Adhered to a Semiconductor Lamina ", be described in more detail in No. 762, this application by assignee of the present invention all and incorporate into by reference accordingly.
Turn to Fig. 7 a, technology can with by reflective metal layer or to pile up the technology of describing among the previous embodiment of 12 formation identical.For example, metal level or pile up 12 and can be the extremely thin chromium layer that forms at TCO110, for example, about 20 to about 100 dusts, are silver layer afterwards, and for example, about 1000 to about 3000 dusts.Perhaps, can be on tco layer 110 titanium layer of deposition of thin, for example, about 100 dusts or littler thickness are about 1000 silver to about 3000 dusts afterwards.Can use other materials.Can form optional titanium lamina, for example, the 100-300 dust is as the last layer that piles up 12.This layer will serve as adhesion layer, thereby provide good adhesion for the layer in future.
Next, at metal level or pile up 12 and use ceramic mixtures 64, comprise ceramic powders and adhesive (for example, liquid adhesive).Ceramic powders can be any suitable material, for example, and alumina silicate (being also referred to as mullite) or zirconium silicate.Can use any one in these forms, or any other suitable pottery.Can comprise conductive component, as graphite powder or metal fillings, in order to make the ceramic body of gained conduct electricity.Sodium silicate solution (for example, pure sodium metasilicate 40% dilute aqueous) can serve as adhesive.In an example, by being mixed with 135g liquid sodium silicate with 40% dilution, 75g alumina silicate and 55g graphite powder (55g) form mixture.To understand as those skilled in the art, can change these ratios, in order to realize conductivity, the condition of cure of expectation, etc.Other adhesives, ceramic powders or conductive component can be used to substitute.
Can use ceramic mixture 64 by any suitable method (for example, by brushing, spraying or ejector).Should enough carry out curing lentamente, in order to allow degasification.If mixture comes up in the early stage covering of curing process, then volatile matter can not be got rid of.In an example, at room temperature, carry out the curing of twenty four hours, though can reduce curing time by improving curing temperature.After solidifying, the thickness of the ceramic body 64 in this example is about 1.6 with approximately between the 2.0mm, and enough rigidity and enough strong in order to handle by the wafer processing apparatus of standard, and does not cause damage.
After solidifying, for example, in baking box, temperature sharply rises continuously or with the form of increment.In an example, temperature sharply rises to 75 ° of C, 110 ° of C, 250 ° of C successively, and about two hours time of staying is wherein arranged under each temperature, can change or this order of optimization although it will be apparent to one skilled in the art that.People's such as Agarwal embodiment has described the highest curing temperature of 520 ° of C.This curing temperature will cause amorphous silicon layer 74 crystallizations, and incompatible with the use of aluminium in reflective metal layer 12 or silver similarly, because aluminium and silver all spread in silicon under 520 ° of C easily.By increasing curing time, can under lower temperature, solidify ceramic mixture.Can be by a plurality of layers application and curing accumulation ceramic body 64.
Turn to Fig. 7 b, as among the embodiment formerly, continue to make: remove the ceramic support element 64 of thin slice 40 and structure from interim carrier 50, and amorphous silicon layer 78 and 76, tco layer 112 and grid line 57 are finished equipment.Shown the structure of counter-rotating, wherein Gou Zao ceramic support element 64 is on the bottom, as during operation.In the equipment of finishing, incident light enters thin slice 40 at first surface 10 places.As among the embodiment formerly, thereby the assembly that produces can be installed on support substrates or the lining top with other similar assemblies.
Perhaps, can form the structure that to bear higher temperature.Turn to Fig. 8, by after dicing sheet 40 forms second surface 62, and after damage is annealed, can be by for example diffusing, doping second surface that mixes, in order to form highly doped n type zone 16 at second surface 62 places.Can form for example dielectric layer 28 of silicon dioxide at second surface 62.In dielectric layer 28, form through hole 33, and plated metal piles up 15 on dielectric layer 28, thereby in through hole 33, contact second surface 62.Metal stack 15 can comprise metal level, and as titanium, tungsten, cobalt etc., it can bear the above temperature of 400 ° of C.People such as Agarwal have described such piling up in more detail.Can under higher temperature, for example, under about 520 ° of C, be solidificated in the ceramic body 64 of constructing on such surface.
Can be namely comprising optional extra metal level or pile up (not showing) with the thin slice facing surfaces, in order to help solder contacts on the back side of ceramic body 64.For example, this piling up can be aluminium or silver layer, is NiV or another kind of suitable material afterwards.
Example: polymer support element
In another embodiment that substitutes, form support component with polymer.Turn to Fig. 9 a, technology can with by metal level or to pile up the technology of describing among the previous embodiment (ceramic body with structure) of 12 formation identical.
In order to begin to form the polymer support element, with the polymer applications of liquid form in conductive formation 22.Can be by any using polymer layer 66 in the multiple known method.It can be spun; In this case, layer 66 thickness will change along with the amount of using and rotary speed.Can or use this layer by any other suitable method spraying.For example, under about 120 to about 200 ° of C, carry out drying steps a few minutes or several hours.After drying, under any suitable temperature, carry out curing schedule.In certain embodiments, can be in conjunction with drying and curing schedule.After solidifying, the thickness of polymeric layer 66 can be for example about 5 and about 30 microns between.A plurality of polymeric layers can be formed, in order to form thicker polymeric acceptor, for example, 100 micron thickness or thicker can be reached; This can help to keep curing time and temperature lower.At the structure of polymer support element 66 with after solidifying, from interim carrier 50, itself and thin slice 40 are removed, and with embodiment formerly in equally finish making.
Make with the same continuation among the embodiment formerly.Turn to Fig. 9 b, remove interim support component.Show the structure of counter-rotating, wherein polymer support element 66 is on the bottom.Form amorphous silicon layer 78 and 76, tco layer 112 and circuit 57 in this way.In the equipment of finishing, incident light enters thin slice 40 at first surface 10 places.
In the embodiment that substitutes (not showing), can under higher temperature, carry out through the following steps and solidify: a) form highly doped zone by second surface 62 places at thin slice 40, replace amorphous silicon layer 72 and 74; And b) as described in chapters and sections (wherein having constructed the ceramic support element) formerly, utilization can be born the metal of higher temperature and be replaced aluminium or silver.
The support component of multiple structure has been described.If the support component of structure is non-conductive, then can utilize several different methods to be formed on and close on support component (in various embodiments, by highly doped amorphous silicon layer or the zone that mix to form) the location of battery and electrically contacting of highly doped zone, these methods comprise that the people's such as Petti that are that on December 9th, 2008 submitted to title is the U.S. Patent application the 12/331st of " Front Connected Photovoltaic Assembly and Associated Methods ", No. 376 and the title submitted to March in 2009 19 are the U.S. Patent application the 12/407th of " Method to Make Electrical Contact to a Bonded Face of a Photovoltaic Cell ", those methods described in No. 064 (be called hereinafter ' 064 application), these two applications all by the application's assignee all and incorporate into by reference accordingly.
More or less thin slice shifts
In the embodiment that describes up to now, will execute the initial surface adhesion of body wafer to vacuum chuck; Then, after the cutting of thin slice, by the surface of vacuum blade support cutting, and discharge initial surface; After transferring to interim carrier, adhere to initial surface, and discharge the surface of cutting; And after extra processing, discharge initial surface from interim carrier.In this flow process, three releases on existence surface: discharge initial surface, discharge the surface of cutting from the vacuum blade from vacuum chuck, and discharge initial surface from interim carrier.Yet other options also are possible.
Can simplify technological process.Turn to Figure 10 a, in one embodiment, the first surface 10(that executes body wafer 20 is comprised cut surface 30, it has before injected by ion and had been defined) be attached to vacuum chuck 54.Turn to Figure 10 b, afterwards, for example, utilize adhesive in the cutting (it forms second surface 62) of thin slice 40, interim carrier 50 is adhered on the second surface 62, and discharge first surfaces 10 from vacuum chuck 54.Turn to Figure 10 c, it shows the structure of counter-rotating, and wherein interim support component 50 is on the bottom, and deposited amorphous shape layer 74 and 72, tco layer 110 and reflective metal layer 12 on first surface 10 are afterwards at metal level 12 structure support components 60.As showing among Figure 10 d, separate second surface 62(inversion structures again from interim carrier, the support component 60 of current structure is on the bottom, as in the operating period of the equipment of finishing), and after cleaning, form amorphous layers 78 and 76 and tco layer 112 at second surface 62.By screen printing formation circuit 57 and with its curing.This technological process only relates to twice release: discharge first surface 10 and discharge second surface 62 from interim carrier from vacuum chuck.In the equipment of finishing, incident light enters thin slice 40 at second surface 62 places, and first surface 10 is at the back side of battery.
In other embodiments, can there be one or more extra releases.Turn to Figure 11 a, first surface 10 is attached to vacuum chuck 54.Turn to Figure 11 b, after the cutting of thin slice 40, vacuum blade (not showing) is used to thin slice 40 is transferred to the first interim carrier 50.Adhere to first surface 10, expose second surface 62 simultaneously.Deposited amorphous shape layer 78 and 76 and tco layer 112 on second surface 62.The second interim carrier 52 is adhered to (above second surface 62) on the tco layer 112.After the second interim carrier 52 attached, from interim carrier 50 first surface 10 separately.Turn to Figure 11 c, it shows the structure of counter-rotating, wherein the second interim carrier 52 on the bottom, cleaning first surface 10, and in first surface 10 formation amorphous silicon layers 74 and 72 and tco layer 110, be reflective metal layer 12 afterwards.Form metal support element 60 by electroplating at metal level 12.At last, turn to Figure 11 d, from second interim carrier tco layer 112 separately, and form circuits 57 and with its curing by screen printing at tco layer 112.This technological process relates to four release: discharge first surface 10, discharge second surface 62, discharge first surface 10 and discharge second surface 62 from the second interim carrier 52 from the first interim carrier 50 from the vacuum blade from vacuum chuck.In the equipment of finishing, incident light enters thin slice 40 at second surface 62 places, and first surface 10 is at the back side of battery.This flow process is more complicated, but has provided advantage,, after finishing all deposition steps, forms the support component 60 of NiFe structure when finishing near technology very much that is.This prepares for cleaning procedure, and can avoid the pollution of equipping.
For clear and integrality provide various embodiments.Significantly, it is unpractical listing all possible embodiment.When giving information by this specification, those skilled in the art will obviously visible other embodiment of the present invention.Described the detailed method of making herein, but can use any other method that forms identical structure, the result belongs to category of the present invention simultaneously.
Several in a lot of forms that the present invention can take have only been described in aforementioned detailed description.For this reason, expect that this detailed description is as illustrative purposes, rather than the usefulness of conduct restriction.It is following claim, comprises all equivalents, and it tends to define the category of this invention.
Claims (44)
1. the method for a manufacturing equipment, described method comprises:
Wafer with about 50 microns or littler thickness is provided, described thin slice have first surface and with described first surface opposing second surface;
In the permanent continuous metal support element of described first surface structure of described thin slice, wherein said support component provides support to described thin slice; With
Make photovoltaic cell, wherein said photovoltaic cell comprises described thin slice.
2. method according to claim 1, the thickness of wherein said thin slice is between about 4 microns and about 20 microns.
3. method according to claim 1, wherein said thin slice comprises the base region of described photovoltaic cell.
4. method according to claim 1, wherein said thin slice is monocrystalline silicon.
5. method according to claim 1, the step of wherein said structure permanent support element comprise by electroplating and form described permanent support element.
6. method according to claim 1, it further comprises:
Before the step of described structure permanent support element, the described second surface of described thin slice is adhered on the interim support component; With
After the step of described structure permanent support element, separate the described second surface of described thin slice from described interim support component.
7. method according to claim 1, the wherein said step of wafer that provides comprises:
Ion is injected into semiconductor executes in the body, in order to define cut surface; With
Execute described thin slice under the body cutting at described cut surface place from described, wherein before the step of described described first surface structure permanent support element at described thin slice, take place from described from executing the step of described thin slice under the body cutting.
8. method according to claim 1, it further comprises, before the step of described structure permanent support element, described first surface at described thin slice forms one, two or more layers, wherein, in the equipment of finishing, described one, two or more the layer be placed between described thin slice and the described permanent support element.
9. method according to claim 1, wherein, in the equipment of finishing, light enters described thin slice at described second surface place.
10. method according to claim 1, it further comprises, before the step of described described first surface structure permanent support element at described thin slice, described thin slice is annealed at least 850 ℃ temperature.
11. method according to claim 1, wherein the ground floor of amorphous silicon is placed between described thin slice and the described permanent support element.
12. method according to claim 11, it further is included in the second layer that forms amorphous silicon on the described second surface of described thin slice.
13. method according to claim 12, the second layer of wherein said amorphous silicon comprises the emitter of described photovoltaic cell.
14. the method for a forming device, described method comprises:
Utilize ion-implanted semiconductor to execute body, in order to define cut surface;
Execute wafer under the body cutting at described cut surface place from described, wherein said thin slice have first surface and with described first surface opposing second surface;
After described cutting step, at the described first surface structure permanent support element of described thin slice, wherein said permanent support element is polymer; With
Make photovoltaic cell, wherein said thin slice comprises the base region of described photovoltaic cell.
15. method according to claim 14, wherein said thin slice is monocrystalline silicon.
16. method according to claim 14, the thickness of wherein said thin slice is between about 4 microns and about 20 microns.
17. the method for a making apparatus, described method comprises:
By executing the first surface of body wafer, gas ion is injected semiconductor execute the body wafer, in order to be defined in the described cut surface of executing in the body wafer;
At described cut surface place, from the described wafer that has under the cutting of body wafer less than about 50 microns thickness of executing, wherein, during described cutting step, for good and all the described described first surface of executing the body wafer is not adhered on the support component;
Described wafer is adhered on the interim carrier;
By electroplating, on the described thin slice or above form continuous metal support element;
Separate described thin slice and described metal support element from described interim carrier; With
Make photovoltaic cell, wherein said thin slice comprises the base region of described photovoltaic cell.
18. the method for a making apparatus, described method comprises:
Wafer with about 50 microns or littler thickness is provided, described thin slice have first surface and with described first surface opposing second surface;
The described second surface of described thin slice is adhered on the interim support component;
After described adhesion, at the described first surface structure permanent support element of described thin slice;
The described second surface that separates described thin slice from described interim support component; With
Make photovoltaic cell, wherein said photovoltaic cell comprises described thin slice.
19. method according to claim 18, the step of wherein said structure permanent support element comprises:
Ceramic mixture is applied to described first surface; With the described mixture of curing, in order to form described permanent support element, wherein said permanent support element comprises pottery.
20. method according to claim 18, the step of wherein said structure permanent support element comprises:
With the polymer applications of liquid form in described first surface; With
Solidify described polymer, wherein said permanent support element comprises described polymer.
21. method according to claim 18, the thickness of wherein said thin slice is between about 4 microns and about 20 microns.
22. method according to claim 18, wherein said thin slice comprises the base region of described photovoltaic cell.
23. method according to claim 18, wherein said thin slice is monocrystalline silicon.
24. method according to claim 18, the wherein said step of wafer that provides comprises:
Ion-implanted semiconductor is executed body, in order to define cut surface; With
Execute described thin slice under the body cutting at described cut surface place from described, wherein before the step of described described first surface structure permanent support element at described thin slice, take place described from executing the step of described thin slice under the body cutting.
25. method according to claim 18, it further comprises, before the step of described structure permanent support element, described first surface at described thin slice forms one, two or more layers, wherein, in the equipment of finishing, described one, two or more the layer be placed between described thin slice and the described permanent support element.
26. method according to claim 18, wherein, in the equipment of finishing, light enters described thin slice at described second surface place.
27. method according to claim 18, it further comprises, before the step of described described first surface structure permanent support element at described thin slice, described thin slice is annealed at least 850 ℃ temperature.
28. method according to claim 18, wherein the ground floor of amorphous silicon is placed between described thin slice and the described permanent support element.
29. method according to claim 28, it further is included in the second layer that forms amorphous silicon on the described second surface of described thin slice.
30. method according to claim 29, the second layer of wherein said amorphous silicon comprises the emitter of described photovoltaic cell.
31. the method for a making apparatus, described method comprises:
Monocrystalline silicon wafer with about 50 microns or littler thickness is provided, described thin slice have first surface and with described first surface opposing second surface;
Described wafer is annealed to 850 ℃ or higher temperature; With
Make photovoltaic cell, the battery of wherein finishing has first amorphous silicon layer of the described first surface of direct contact, and second amorphous silicon layer that directly contacts described second surface.
32. method according to claim 31, the thickness of wherein said thin slice is between about 4 microns and about 20 microns.
33. method according to claim 31 wherein after described annealing steps, deposits described first amorphous silicon layer and described second amorphous silicon layer.
34. method according to claim 31, wherein said first amorphous silicon layer comprises the emitter of described photovoltaic cell, or described second amorphous silicon layer comprises the emitter of described photovoltaic cell.
35. method according to claim 31, wherein at least a portion with described first amorphous silicon layer is doping to first conductivity type to heavens, and at least a portion of described second amorphous silicon layer is doping to second conductivity type relative with described first conductivity type to heavens.
36. method according to claim 31, wherein said thin slice comprises the base region of described photovoltaic cell.
37. method according to claim 31, the wherein said step of wafer that provides comprises:
Ion-implanted semiconductor is executed body, in order to define cut surface; With
Execute described thin slice under the body cutting at described cut surface place from described.
38. method according to claim 31, wherein, during described annealing steps, temperature reaches at least 900 ℃.
39. method according to claim 31, wherein said annealing steps continues at least 60 seconds.
40. method according to claim 31, it further comprises, after described annealing steps, on the described first surface of described thin slice or above structure permanent support element, wherein, in the battery of finishing, described first amorphous silicon layer is placed between the described first surface and described support component of described thin slice.
41. according to the described method of claim 40, the step of wherein said structure permanent support element comprises plating, and described permanent support element comprises metal.
42. according to the described method of claim 40, the step of wherein said structure permanent support element comprises:
Ceramic mixture is applied to the described first surface of described thin slice; With
Solidify described ceramic mixture, wherein said permanent support element is pottery.
43. according to the described method of claim 40, wherein reflective metal layer is placed between described permanent support element and described first amorphous silicon layer.
44. according to the described method of claim 43, wherein including transparent conducting oxide layer is placed between described reflective metal layer and described first amorphous silicon layer.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/980,427 US8101451B1 (en) | 2010-12-29 | 2010-12-29 | Method to form a device including an annealed lamina and having amorphous silicon on opposing faces |
| US12/980,424 US8173452B1 (en) | 2010-12-29 | 2010-12-29 | Method to form a device by constructing a support element on a thin semiconductor lamina |
| US12/980,424 | 2010-12-29 | ||
| US12/980,427 | 2010-12-29 | ||
| PCT/US2011/066957 WO2012092145A2 (en) | 2010-12-29 | 2011-12-22 | A method to form a device by constructing a support element on a thin semiconductor lamina |
Publications (1)
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| CN103348491A true CN103348491A (en) | 2013-10-09 |
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| CN2011800629889A Pending CN103348491A (en) | 2010-12-29 | 2011-12-22 | Method to form device by constructing support element on thin semiconductor lamina |
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| EP (1) | EP2659517A4 (en) |
| JP (1) | JP2014501456A (en) |
| KR (1) | KR20130143100A (en) |
| CN (1) | CN103348491A (en) |
| WO (1) | WO2012092145A2 (en) |
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| US8901010B2 (en) * | 2013-03-15 | 2014-12-02 | Sunpower Corporation | Methods for improving solar cell lifetime and efficiency |
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| JP2002100791A (en) * | 2000-09-21 | 2002-04-05 | Canon Inc | Manufacturing method for solar battery |
| JP2003017723A (en) * | 2001-06-29 | 2003-01-17 | Shin Etsu Handotai Co Ltd | Method of manufacturing thin semiconductor film and method of manufacturing solar battery |
| JP5084146B2 (en) * | 2006-01-30 | 2012-11-28 | 三洋電機株式会社 | Photovoltaic module |
| JP5090716B2 (en) * | 2006-11-24 | 2012-12-05 | 信越化学工業株式会社 | Method for producing single crystal silicon solar cell |
| US8129613B2 (en) * | 2008-02-05 | 2012-03-06 | Twin Creeks Technologies, Inc. | Photovoltaic cell comprising a thin lamina having low base resistivity and method of making |
| JP5297219B2 (en) * | 2008-02-29 | 2013-09-25 | 信越化学工業株式会社 | Manufacturing method of substrate having single crystal thin film |
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| EP2105972A3 (en) * | 2008-03-28 | 2015-06-10 | Semiconductor Energy Laboratory Co, Ltd. | Photoelectric conversion device and method for manufacturing the same |
| US7897945B2 (en) * | 2008-09-25 | 2011-03-01 | Twin Creeks Technologies, Inc. | Hydrogen ion implanter using a broad beam source |
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| WO2010118688A1 (en) * | 2009-04-15 | 2010-10-21 | Zhu Huilong | Thin film of solar battery structure, thin film of solar battery array and manufacturing method thereof |
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2011
- 2011-12-22 JP JP2013547580A patent/JP2014501456A/en active Pending
- 2011-12-22 CN CN2011800629889A patent/CN103348491A/en active Pending
- 2011-12-22 EP EP11852246.5A patent/EP2659517A4/en not_active Withdrawn
- 2011-12-22 WO PCT/US2011/066957 patent/WO2012092145A2/en active Application Filing
- 2011-12-22 KR KR1020137017702A patent/KR20130143100A/en not_active Application Discontinuation
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| US20080092949A1 (en) * | 2006-09-11 | 2008-04-24 | Silicon China Limited | Method and structure for textured thermal cut for photovoltaic applications for thin films |
| US20090142908A1 (en) * | 2007-11-30 | 2009-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing photoelectric conversion device |
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Also Published As
| Publication number | Publication date |
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| EP2659517A4 (en) | 2017-10-25 |
| KR20130143100A (en) | 2013-12-30 |
| JP2014501456A (en) | 2014-01-20 |
| WO2012092145A3 (en) | 2012-11-08 |
| WO2012092145A2 (en) | 2012-07-05 |
| EP2659517A2 (en) | 2013-11-06 |
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