JP2015119062A - SiC WAFER MANUFACTURING METHOD, SiC SEMICONDUCTOR MANUFACTURING METHOD AND GRAPHITE SILICON CARBIDE COMPOSITE SUBSTRATE - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method which can easily obtain a thinner SiC wafer which is unlikely to be damaged by handling in a manufacturing process of obtaining an SiC wafer by bonding a single crystal SiC substrate and a polycrystal SiC substrate and subsequently separating the single crystal SiC substrate and the polycrystal SiC substrate.SOLUTION: An SiC wafer manufacturing method comprises: a bonding process of preparing a graphite silicon carbide composite substrate which has a pyrolytic layer on a surface of a graphite base material and has a CVD-SiC layer on the pyrolytic layer, and preparing a single crystal SiC substrate which has an ion implantation layer with a surface being implanted with a hydrogen ion, and obtaining a bonded body by bonding the CVD-SiC layer of the graphite silicon carbide composite substrate and the ion implantation layer of the single crystal SiC substrate; a first peeling process of heating the bonded body and peeling the ion implantation layer from the single crystal SiC substrate to obtain a single crystal coated substrate; and a second peeling process of peeling the pyrolytic layer and the CVD-SiC layer of the single crystal coated substrate to obtain an SiC wafer.

Description

  The present invention relates to a method for manufacturing a SiC wafer, a method for manufacturing a SiC semiconductor, and a graphite silicon carbide composite substrate.

SiC (silicon carbide) is a compound semiconductor material composed of silicon and carbon.
The dielectric breakdown electric field strength is 10 times that of Si, and the band gap is 3 times that of Si. In addition, the p-type and n-type control required for device fabrication is possible in a wide range. It is expected as a material for power devices exceeding.
In addition, since SiC has a high withstand voltage even with a thinner thickness, it is characterized that a thin semiconductor can be obtained with a low ON resistance by being made thin.

  However, SiC semiconductors are expensive and cannot be mass-produced as compared to Si semiconductors because a large-area wafer cannot be obtained and the process is complicated as compared with widely used Si semiconductors.

Various attempts have been made to reduce the cost of SiC semiconductors.
Patent Document 1 discloses a method for manufacturing a silicon carbide substrate, comprising at least a single crystal silicon carbide substrate and a polycrystalline silicon carbide substrate having a micropipe density of 30 / cm ² or less, and a single crystal silicon carbide substrate. And a step of laminating the polycrystalline silicon carbide substrate and then a step of thinning the single crystal silicon carbide substrate to manufacture a substrate having a single crystal layer formed on the polycrystalline substrate. Yes.

Further, before the step of bonding the single crystal silicon carbide substrate and the polycrystalline silicon carbide substrate, a step of forming a hydrogen ion implanted layer by performing hydrogen ion implantation on the single crystal silicon carbide substrate is performed, And a step of bonding the polycrystalline silicon carbide substrate and a step of thinning the single crystal silicon carbide substrate by performing a heat treatment at a temperature of 350 ° C. or less before the step of thinning the single crystal silicon carbide substrate, A method for manufacturing a silicon carbide substrate is described which is a step of mechanically peeling at a hydrogen ion implanted layer.
By such a method, more SiC wafers can be obtained from one SiC single crystal ingot.

JP 2009-117533 A

  However, in the above-described method for manufacturing an SiC wafer, hydrogen ion implantation is performed and a single crystal SiC substrate on which a thin ion implantation layer is formed and a polycrystalline SiC substrate are bonded together, and then heated and peeled off. In most cases, the SiC wafer is a polycrystalline SiC substrate. For this reason, the SiC wafer uses a polycrystalline SiC substrate having a sufficient thickness so as to have mechanical strength so as not to be damaged during handling such as polishing. Therefore, it is necessary to use a polycrystalline SiC substrate that is thicker than necessary to function as a semiconductor.

If the polycrystalline SiC substrate is thick, the ON resistance increases, and the characteristics of the original SiC semiconductor cannot be exhibited sufficiently.
That is, in order to prevent damage to the substrate in the manufacturing process, it is preferable to increase the thickness of the polycrystalline SiC substrate, and to reduce the ON resistance of the obtained SiC semiconductor, it is preferable to use a thin polycrystalline SiC substrate.

  The first problem of the present invention is that a single-crystal SiC substrate and a polycrystalline SiC substrate are bonded together and then peeled off to obtain a SiC wafer, which is less likely to be damaged by handling, and a thinner SiC wafer can be easily obtained. It is to provide a manufacturing method.

  The second problem of the present invention is that the SiC semiconductor manufacturing process using the SiC wafer obtained by laminating and bonding the single crystal SiC substrate and the polycrystalline SiC substrate is less likely to be damaged by handling and is thinner. An object of the present invention is to provide a manufacturing method in which a SiC semiconductor can be easily obtained.

  A third problem of the present invention is that in a manufacturing process for obtaining a SiC wafer by bonding a single crystal SiC substrate and a polycrystalline SiC substrate and then separating them, it is difficult to damage by handling, and a thinner SiC wafer can be easily obtained. An object of the present invention is to provide a polycrystalline SiC substrate.

  The SiC wafer manufacturing method of the present invention for solving the above problems includes a graphite silicon carbide composite substrate having a pyrolytic carbon layer on the surface of a graphite substrate and a CVD-SiC layer on the pyrolytic carbon layer, and a surface A single-crystal SiC substrate having an ion-implanted layer into which hydrogen ions are implanted is prepared, and a CVD-SiC layer of the graphite silicon carbide composite substrate and an ion-implanted layer of the single-crystal SiC substrate are bonded to obtain a bonded body. A bonding step, a first peeling step of heating the bonded body, peeling the ion implantation layer from the single crystal SiC substrate to obtain a single crystal coated substrate, and the pyrolytic carbon layer of the single crystal coated substrate and the CVD- A second peeling step of peeling the SiC layer to obtain a SiC wafer.

  In the method for producing a SiC wafer according to the present invention, the CVD-SiC layer and the ion-implanted layer, which will later become a SiC wafer, are handled while being bonded to the graphite substrate together with the pyrolytic carbon layer, so that they are damaged during handling such as polishing. Can be difficult.

  Further, since the CVD-SiC layer is supported by the graphite base material, it can be easily handled even if it is thin, and a thin SiC wafer with a small ON resistance can be easily obtained.

The SiC wafer manufacturing method of the present invention preferably has the following mode.
(1) The graphite silicon carbide composite substrate is a disk and has a marking indicating a direction on the edge thereof, and the single crystal SiC substrate is a disk and has a marking indicating a direction on the edge,
The joining step joins the graphite silicon carbide composite substrate and the single crystal SiC substrate together with markings indicating directions.

  In order for the SiC semiconductor to function sufficiently, a pattern is formed in a certain direction from the SiC wafer and diced. A graphite silicon carbide composite substrate and a single crystal SiC substrate each having a marking indicating a direction, and joining the graphite silicon carbide composite substrate and the single crystal SiC substrate together with the marking indicating the direction, thereby joining the single crystal SiC substrate Can be reflected in the crystal orientation of the SiC wafer, and the crystal orientation of the SiC wafer can be easily confirmed.

(2) The marking is an orientation flat or a notch.
In a general semiconductor manufacturing apparatus, a crystal manufacturing direction is confirmed by an orientation flat or notch, and semiconductor manufacturing processes such as pattern shape and dicing are performed. For this reason, when the SiC wafer of this invention has an orientation flat or a notch, a SiC semiconductor can be manufactured using the semiconductor manufacturing apparatus which prevails widely.

(3) The method for manufacturing the SiC wafer further includes a heat treatment step after the first peeling step.
The ion-implanted layer and the CVD-SiC layer can be diffused and bonded more firmly to each other by a heat treatment process.

(4) The thickness of the CVD-SiC layer is 50 to 1000 μm.
When the thickness of the CVD-SiC layer is 50 μm or more, sufficient mechanical strength can be imparted to the SiC semiconductor obtained from the SiC wafer. When the thickness of the CVD-SiC layer is 1000 μm or less, the ON resistance of the SiC semiconductor obtained from the SiC wafer can be reduced.

(5) The graphite silicon carbide composite substrate has a region having no pyrolytic carbon layer on a side wall or an edge thereof, and the CVD-SiC layer is in contact with the graphite substrate in the region without the pyrolytic carbon layer.
SiC having a region without a pyrolytic carbon layer on the side wall or edge of the graphite silicon carbide composite substrate, where the CVD-SiC layer is in contact with the graphite substrate in the region without the pyrolytic carbon layer, thereby obtaining SiC obtained from the SiC semiconductor. The central portion of the wafer can be easily peeled from the graphite base material, and the peripheral portion can be made difficult to peel from the graphite base material. By appropriately setting the area and region where the graphite base material is exposed, the ease of peeling of the SiC wafer from the single crystal-coated substrate can be easily controlled.

  By appropriately forming a region having no pyrolytic carbon layer on the graphite silicon carbide composite substrate, for example, a region where the CVD-SiC layer and the graphite substrate are not in contact with each other at an orientation flat or a notch portion can be formed. Can be easily peeled off.

  Further, a SiC semiconductor can be obtained by forming a pattern on the ion-implanted layer of the single crystal-coated substrate and then dicing. At this time, since the CVD-SiC layer constituting the SiC semiconductor is bonded to the graphite substrate via the pyrolytic carbon layer, it can be easily peeled off.

  The SiC semiconductor manufacturing method of the present invention includes the above-described SiC wafer manufacturing method and a semiconductor forming step, and the semiconductor forming step is after the heat treatment step and before the second peeling step. .

  Since the SiC semiconductor is formed on the single-crystal-coated substrate and then separated, it is not necessary to handle a thin SiC wafer, and it can be made difficult to damage, and a thin CVD-SiC layer can be used as a part of the SiC semiconductor. The ON resistance of the semiconductor can be easily reduced.

  In the graphite silicon carbide composite substrate of the present invention, a pyrolytic carbon layer and a CVD-SiC layer are sequentially laminated on the surface of a graphite base material that is a disk having a marking on the edge.

    In the graphite silicon carbide composite substrate of the present invention, the CVD-SiC layer and the ion implantation layer, which will later become a SiC wafer, are handled while being bonded to the graphite substrate together with the pyrolytic carbon layer, so that they are damaged during handling such as polishing. Can be difficult.

  Further, since the CVD-SiC layer is supported by the graphite base material, it can be easily handled even if it is thin, and a thin SiC wafer with a small ON resistance can be easily obtained.

  In order for the SiC semiconductor to function sufficiently, a pattern is formed in a certain direction from the SiC wafer and diced. The graphite silicon carbide composite substrate and the single crystal SiC substrate have markings, and the direction of the single crystal SiC substrate is changed to the crystal of the SiC wafer by joining the graphite silicon carbide composite substrate and the single crystal SiC substrate in alignment. The crystal orientation of the SiC wafer can be easily confirmed.

The graphite silicon carbide composite substrate of the present invention desirably has the following mode.
(6) The marking is an orientation flat or a notch.
In general semiconductor manufacturing apparatuses, semiconductor manufacturing processes such as pattern formability and dicing are performed by confirming crystal orientation by orientation flats or notches. For this reason, when the SiC wafer of this invention has an orientation flat or a notch, a SiC semiconductor can be manufactured using the semiconductor manufacturing apparatus which prevails widely.

(7) The thickness of the CVD-SiC layer is 50 to 1000 μm.
When the thickness of the CVD-SiC layer is 50 μm or more, sufficient mechanical strength can be imparted to the SiC semiconductor obtained from the SiC wafer. When the thickness of the CVD-SiC layer is 1000 μm or less, the ON resistance of the SiC semiconductor obtained from the SiC wafer can be reduced.

  (8) The graphite silicon carbide composite substrate has a region having no pyrolytic carbon layer on a side wall or an edge thereof, and the CVD-SiC layer is in contact with the graphite substrate in the region without the pyrolytic carbon layer.

  SiC having a region without a pyrolytic carbon layer on the side wall or edge of the graphite silicon carbide composite substrate, where the CVD-SiC layer is in contact with the graphite substrate in the region without the pyrolytic carbon layer, thereby obtaining SiC obtained from the SiC semiconductor. The central portion of the wafer can be easily peeled from the graphite base material, and the peripheral portion can be made difficult to peel from the graphite base material. By appropriately setting the area and region where the graphite base material is exposed, the ease of peeling of the SiC wafer from the single crystal-coated substrate can be easily controlled.

  By appropriately forming a region without a pyrolytic carbon layer on the graphite silicon carbide composite substrate, for example, a region where the CVD-SiC layer and the graphite substrate are not in contact with each other at the orientation flat or the notch portion can be formed. Can be easily peeled off.

Further, a SiC semiconductor can be obtained by forming a pattern on the ion implantation layer as a single crystal-coated substrate with the graphite base material being bonded and then dicing. At this time, since the CVD-SiC layer constituting the SiC semiconductor is bonded to the graphite substrate via the pyrolytic carbon layer, it can be easily peeled off.

  According to the present invention, since a thin SiC wafer can be handled in a state bonded to a graphite substrate, it can be made difficult to damage in the manufacturing process of the SiC wafer, and the obtained SiC wafer can be made thin. A SiC wafer having a small ON resistance can be obtained.

  According to the present invention, since a thin SiC wafer can be handled in a state bonded to a graphite substrate, it can be made difficult to damage in the manufacturing process of the SiC semiconductor, and the obtained SiC semiconductor can be made thin. A SiC semiconductor having a small ON resistance can be obtained.

  According to the graphite silicon carbide composite substrate which is a polycrystalline SiC substrate of the present invention, a thin SiC wafer can be handled in a state of being bonded to a graphite base material, so that it can be made difficult to be damaged in the manufacturing process of the SiC wafer. In addition, the obtained SiC wafer can be thinned, and a SiC wafer having a small ON resistance can be obtained.

The manufacturing process of the manufacturing method of the SiC wafer of this invention is shown, S1 is a joining process, S2 is a 1st peeling process, S3 is a 2nd peeling process. It is one Embodiment of the graphite silicon carbide composite substrate described in the manufacturing method of this invention, (a) has an orientation flat, (b) has a notch. It is one Embodiment of the graphite silicon carbide composite substrate described in the manufacturing method of this invention, (a) has an area | region without a pyrolytic carbon layer in an edge, (b) is a pyrolytic carbon layer in a side wall. It is a modification which has an area | region without.

  The SiC wafer manufacturing method of the present invention includes a graphite silicon carbide composite substrate having a pyrolytic carbon layer on the surface of a graphite substrate and a CVD-SiC layer on the pyrolytic carbon layer, and hydrogen ions are implanted on the surface. A bonding step of preparing a single-crystal SiC substrate having an ion-implanted layer, bonding the CVD-SiC layer of the graphite silicon carbide composite substrate and the ion-implanted layer of the single-crystal SiC substrate, and obtaining a bonded body; And the ion-implanted layer is peeled from the single crystal SiC substrate to obtain a single crystal coated substrate, and the pyrolytic carbon layer and the CVD-SiC layer of the single crystal coated substrate are peeled off to form SiC. A second peeling step for obtaining a wafer.

  In the method for producing a SiC wafer according to the present invention, the CVD-SiC layer and the ion-implanted layer, which will later become a SiC wafer, are handled while being bonded to the graphite substrate together with the pyrolytic carbon layer, so that they are damaged during handling such as polishing. Can be difficult.

  Further, since the CVD-SiC layer is supported by the graphite base material, it can be easily handled even if it is thin, and a thin SiC wafer with a small ON resistance can be easily obtained.

  By implanting hydrogen into the single crystal SiC substrate, the hydrogen ions can reach a depth corresponding to the incident energy. When a single crystal substrate into which hydrogen ions are implanted is heated, hydrogen collects in implantation defects formed at the time of ion implantation, and the crystal bond can be cut. Since the single crystal SiC substrate is bonded to the CVD-SiC layer, the ion-implanted surface can move to the CVD-SiC layer side in the first peeling step.

  The single crystal SiC substrate into which hydrogen ions are implanted is brittle while maintaining the surface of the single crystal, and thus can be moved to the CVD-SiC layer while maintaining the single crystal. Since the single-crystal SiC layer is formed on the surface of the CVD-SiC layer after the first peeling step, it is possible to provide an SiC wafer that can be suitably used for an SiC semiconductor by further epitaxially growing the SiC layer. it can.

  The bonding step of bonding the CVD-SiC layer and the single crystal SiC substrate can be performed as follows.

  Both the CVD-SiC layer and the single crystal SiC substrate are mirror-polished. The mirror-polished surfaces can be brought into close contact with each other to form a joint surface without a gap.

  As the CVD-SiC layer and the single crystal SiC substrate, it is preferable to use those that have been cleaned in advance. The cleaning method is not particularly limited, but it is preferable to use, for example, a chemical such as an acid and pure water. For example, as a cleaning method, RCA cleaning widely used in semiconductor cleaning can be used. RCA cleaning is a cleaning method called SC1, which is a cleaning method using a combination of ammonia, hydrogen peroxide and water, and a cleaning method called SC2, which is a combination of hydrochloric acid, hydrogen peroxide and water. It is mainly used to remove particles and organic contaminants, and in SC2, it is used to remove metal contaminants.

It is preferable to perform plasma activation treatment on at least one of the CVD-SiC layer and the single crystal SiC substrate. The surface subjected to the plasma activation process is easy to bond, and the CVD-SiC layer and the single crystal SiC substrate can be bonded more firmly.
The first peeling step can be peeled by heating the joined body. The ion-implanted layer is fragile because hydrogen ions penetrate inside. When the bonded body is heated, the ion-implanted layer portion that has become brittle due to a difference in thermal expansion between the single crystal SiC substrate and the graphite silicon carbide composite substrate peels off. A single crystal-coated substrate is obtained in which about 1 to 10 μm of the surface of the ion implantation layer is attached to the CVD-SiC layer, and a part of the ion implantation layer is attached to the CVD-SiC layer of the graphite silicon carbide composite substrate. That is, the ion-implanted layer is exposed on either side of the peeled surface.

  The first peeling step is aimed at separation of the ion implantation layer due to a difference in thermal expansion, and therefore can be separated by heating to a temperature of 200 to 1000 ° C., for example, without being involved in a chemical reaction.

The graphite silicon carbide composite substrate is a disc and has a marking indicating a direction on the edge thereof, and the single crystal SiC substrate is a disc and has a marking indicating a direction on the edge,
In the joining step, the graphite silicon carbide composite substrate and the single crystal SiC substrate are joined together with markings indicating directions.

  In order for the SiC semiconductor to function sufficiently, a pattern is formed in a certain direction from the SiC wafer and diced. A graphite silicon carbide composite substrate and a single crystal SiC substrate each having a marking indicating a direction, and joining the graphite silicon carbide composite substrate and the single crystal SiC substrate together with the marking indicating the direction, thereby joining the single crystal SiC The direction of the substrate can be reflected in the crystal orientation of the SiC wafer, and the crystal orientation of the SiC wafer can be easily confirmed.

The marking is preferably an orientation flat or a notch.
In a general semiconductor manufacturing apparatus, the crystal orientation is confirmed by an orientation flat or notch, and semiconductor formation and dicing are performed. For this reason, when the SiC wafer of this invention has an orientation flat or a notch, a SiC semiconductor can be manufactured using the semiconductor manufacturing apparatus which prevails widely.

  The SiC wafer manufacturing method preferably further includes a heat treatment step after the first peeling step. The ion-implanted layer and the CVD-SiC layer can be diffused and bonded more firmly to each other by a heat treatment process.

  Although the temperature of a heat processing process is not specifically limited, For example, it is 1000-2000 degreeC. When the temperature is 1000 ° C. or higher, the bonding between the ion implantation layer and the CVD-SiC layer can be further strengthened, and when the temperature is 2000 ° C. or lower, crystal defects are less likely to occur in the ion implantation layer that is single crystal SiC. The heating temperature in the heat treatment step is preferably higher than the heating temperature in the first peeling step in order to promote the bonding between the polycrystalline CVD-SiC layer and the single crystal ion implantation layer. Bonding can be further strengthened by heating to a temperature higher than the heating temperature in the first peeling step.

  The heat treatment step may be either before the second peeling step or after the second peeling step, and is not particularly limited, but is preferably before the second peeling step. When there is a heat treatment step before the second peeling step, it is possible to make it difficult for warpage to occur in the heat treatment step.

The thickness of the CVD-SiC layer is preferably 50 to 1000 μm.
When the thickness of the CVD-SiC layer is 50 μm or more, sufficient mechanical strength can be imparted to the SiC semiconductor obtained from the SiC wafer. When the thickness of the CVD-SiC layer is 1000 μm or less, the ON resistance of the SiC semiconductor obtained from the SiC wafer can be reduced.

  A more preferable thickness of the CVD-SiC layer is 100 to 500 μm. When the thickness of the CVD-SiC layer is 100 μm or more, the strength of the SiC semiconductor obtained from the SiC wafer can be further increased. When the thickness of the CVD-SiC layer is 500 μm or less, the ON resistance of the SiC semiconductor obtained from the SiC wafer can be further reduced.

  The method for producing the SiC wafer has a region having no pyrolytic carbon layer on a side wall or an edge of the graphite silicon carbide composite substrate, and the CVD-SiC layer is in contact with the graphite substrate in the region without the pyrolytic carbon layer. Preferably it is.

  SiC having a region without a pyrolytic carbon layer on the side wall or edge of the graphite silicon carbide composite substrate, where the CVD-SiC layer is in contact with the graphite substrate in the region without the pyrolytic carbon layer, thereby obtaining SiC obtained from the SiC semiconductor. The central portion of the wafer can be easily peeled from the graphite base material, and the peripheral portion can be made difficult to peel from the graphite base material. By appropriately setting the area and region where the graphite base material is exposed, the ease of peeling of the SiC wafer from the single crystal-coated substrate can be easily controlled.

  Thus, by exposing a part of the graphite base material to form the graphite silicon carbide composite substrate, it is possible to prevent the graphite base material from being separated from the SiC wafer during the SiC wafer manufacturing process.

  Moreover, a SiC semiconductor can be formed on a single crystal before the 2nd peeling process which isolate | separates a SiC wafer. Specifically, a SiC semiconductor can be obtained by forming a SiC semiconductor on a single crystal of a single crystal-coated substrate and then dicing. At this time, since the CVD-SiC layer constituting the SiC semiconductor is bonded to the graphite substrate via the pyrolytic carbon layer, it can be easily peeled off.

  The formation of the SiC semiconductor is appropriately selected according to the desired SiC semiconductor, such as pattern shape, oxidation, diffusion, CVD, ion implantation, CMP, electrode shape, etching, pattern shape, electrode shape, and photoresist coating. can do.

  Next, Example 1 according to the present invention will be described. FIG. 1 shows a manufacturing process of the SiC wafer manufacturing method of the present invention, where S1 is a bonding process, S2 is a first peeling process, and S3 is a second peeling process. FIG. 2 is an embodiment of a graphite silicon carbide composite substrate described in the production method of the present invention, in which (a) has an orientation flat 8a and (b) has a notch 8b which is a modified example thereof. doing. FIG. 3 is one embodiment of a graphite silicon carbide composite substrate described in the production method of the present invention, wherein (a) has a region having no pyrolytic carbon layer at the edge, and (b) is on the side wall. It is a modification which has an area | region without a pyrolytic carbon layer. FIG. 3A shows a pyrolytic carbon layer having a diameter smaller than that of the graphite substrate, and the graphite substrate and the CVD-SiC layer are in contact with each other outside the pyrolytic carbon layer. FIG. 3B has a pyrolytic carbon layer having the same diameter as the graphite base material, but no pyrolytic carbon layer is formed on the side surface of the graphite base material. And the CVD-SiC layer are in contact with each other.

<Joint process>
The graphite substrate 1 has a disk shape with a diameter of 150 mm and a thickness of 2 mm, and is provided with an orientation flat 8a serving as a marking at the edge. The length of the side of the orientation flat 8a is 2 cm. The surface of the graphite substrate 1 is provided with a pyrolytic carbon layer 2 having a thickness of 40 μm and a diameter of 149 mm. That is, the edge 0.5 mm has no pyrolytic carbon layer, and the graphite base material is in contact with the CVD-SiC layer 3. That is, the outside of the pyrolytic carbon layer 2 is a region 9 without the pyrolytic carbon layer. A CVD-SiC layer 3 having a thickness of 500 μm is provided on the pyrolytic carbon layer. That is, the edge 0.5 mm of the CVD-SiC layer 3 is directly formed on the graphite base material without interposing a pyrolytic carbon layer. After the surface of the CVD-SiC layer 3 is polished, RCA cleaning is performed. The RCA cleaning can be performed with a commercially available RCA cleaning solution.

  Next, a single crystal SiC substrate 4 having an orientation flat is prepared, and hydrogen ions are implanted into one surface thereof. By implanting hydrogen ions, an ion implantation layer 4a is formed. After implanting hydrogen ions, RCA cleaning is performed. The RCA cleaning can be performed with a commercially available RCA cleaning solution.

  Next, bonded body 7 is obtained by bringing ion-implanted layer 4a of single-crystal SiC substrate 4 and CVD-SiC layer 3 of the graphite silicon carbide composite substrate into contact with each other and press-bonding. There are no particular limitations on the temperature and pressure for pressure bonding.

<First peeling step>
The obtained bonded body 7 is heated to be separated by the ion implantation layer 4a. Since the ion implantation layer 4a becomes brittle when hydrogen ions are implanted, the surface portion of the ion implantation layer 4a can be peeled off. In FIG. 1, the ion implanted layer remaining on the single crystal SiC substrate side is 4c, and the ion implanted layer moved to the graphite silicon carbide composite substrate side is 4b. The heating temperature is not particularly limited, but is 400 ° C. The joined body is separated at the ion implantation layer portion due to a difference in thermal expansion generated inside the joined body.

<Heat treatment process>
The single crystal coated substrate 5 composed of the graphite substrate 1, the pyrolytic carbon 2, the CVD-SiC layer 3, and the ion implantation layer 4b is heat-treated. The heat treatment is performed at 1200 ° C. for 10 minutes. By this treatment, the bonding between the CVD-SiC layer 3 and the ion implantation layer 4b can be strengthened.

<Second peeling step>
The single crystal SiC wafer is peeled from the orientation flat portion of the heat-treated single crystal coated substrate. The orientation flat portion can be easily peeled off because the pyrolytic carbon layer 2 is present between the graphite substrate 1 and the CVD-SiC layer 3.

Next, a second embodiment according to the present invention will be described.
Example 2 is a manufacturing method of a SiC semiconductor, and includes a semiconductor formation process between the heat treatment process and the second peeling process of Example 1.

  The first peeling step is performed in the same manner as in Example 1 to obtain a single crystal-coated substrate, and then an SiC single crystal is epitaxially grown to form an SiC epitaxial layer. Furthermore, after obtaining the desired SiC semiconductor by pattern formability, oxidation, diffusion, CVD, ion implantation, CMP, electrode formability, etching, pattern formability, electrode formability, and photoresist coating, the SiC semiconductor is formed by dicing. Disconnect. Since the cut SiC semiconductor is in contact with the graphite substrate 1 via the pyrolytic carbon layer 2, it can be easily separated between the pyrolytic carbon layer 2 and the CVD-SiC layer 3.

DESCRIPTION OF SYMBOLS 1 Graphite base material 2 Pyrolytic carbon layer 3 CVD-SiC layer 4 Single crystal SiC substrate 4a, 4b, 4c Ion implantation layer 5 Single crystal coated substrate 6 Graphite silicon carbide substrate 7 Joined body 8a Orientation flat 8b Notch 9 Pyrolytic carbon layer Area without

Claims (11)

A graphite silicon carbide composite substrate having a pyrolytic carbon layer on the surface of the graphite substrate and a CVD-SiC layer on the pyrolytic carbon layer; and a single crystal SiC substrate having an ion implanted layer in which hydrogen ions are implanted on the surface; Prepare
Bonding step of bonding the CVD-SiC layer of the graphite silicon carbide composite substrate and the ion implantation layer of the single crystal SiC substrate to obtain a bonded body;
Heating the joined body, peeling the ion-implanted layer from the single-crystal SiC substrate, and obtaining a single-crystal-coated substrate;
A second peeling step of peeling the pyrolytic carbon layer and the CVD-SiC layer of the single crystal-coated substrate to obtain a SiC wafer;
A method for producing a SiC wafer comprising: The graphite silicon carbide composite substrate is a disc and has a marking indicating a direction on the edge thereof, and the single crystal SiC substrate is a disc and has a marking indicating a direction on the edge,
2. The method of manufacturing an SiC wafer according to claim 1, wherein the joining step joins the graphite silicon carbide composite substrate and the single crystal SiC substrate together with markings indicating directions.   The SiC wafer manufacturing method according to claim 2, wherein the marking is an orientation flat or a notch.   The SiC wafer manufacturing method according to claim 1, further comprising a heat treatment step after the first peeling step.   The thickness of the said CVD-SiC layer is 50-1000 micrometers, The manufacturing method of the SiC wafer as described in any one of Claims 1-4 characterized by the above-mentioned.   The graphite silicon carbide composite substrate has a region having no pyrolytic carbon layer on a side wall or an edge thereof, and the CVD-SiC layer is in contact with the graphite substrate in the region without the pyrolytic carbon layer. The manufacturing method of the SiC wafer as described in any one of 1-5.   It is a manufacturing method of the SiC semiconductor which consists of the manufacturing method of the SiC wafer according to any one of claims 4-6, and a semiconductor formation process, and the semiconductor formation process is the 2nd after the heat treatment process. A method of manufacturing an SiC semiconductor before the peeling step.   A graphite silicon carbide composite substrate, wherein a pyrolytic carbon layer and a CVD-SiC layer are sequentially laminated on the surface of a graphite substrate which is a disk having a marking on an edge.   The graphite silicon carbide composite substrate according to claim 8, wherein the marking is an orientation flat or a notch.   10. The graphite silicon carbide composite substrate according to claim 8, wherein the CVD-SiC layer has a thickness of 50 to 1000 μm. The graphite silicon carbide composite substrate has a region having no pyrolytic carbon layer on a side wall or an edge thereof, and the CVD-SiC layer is in contact with the graphite substrate in the region without the pyrolytic carbon layer. The graphite silicon carbide composite substrate according to any one of 8 to 10.

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