TW201246261A - System for magnetic shielding - Google Patents
System for magnetic shielding Download PDFInfo
- Publication number
- TW201246261A TW201246261A TW101104865A TW101104865A TW201246261A TW 201246261 A TW201246261 A TW 201246261A TW 101104865 A TW101104865 A TW 101104865A TW 101104865 A TW101104865 A TW 101104865A TW 201246261 A TW201246261 A TW 201246261A
- Authority
- TW
- Taiwan
- Prior art keywords
- chamber
- coils
- magnetic field
- strip
- strips
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/52—Screens for shielding; Guides for influencing the discharge; Masks interposed in the electron stream
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
- H01J27/18—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation with an applied axial magnetic field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
- H01J37/1475—Scanning means magnetic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H10P72/0471—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
- H01J2237/0264—Shields magnetic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
- H01J2237/31754—Lithography using particular beams or near-field effects, e.g. STM-like techniques using electron beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31774—Multi-beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31793—Problems associated with lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Combustion & Propulsion (AREA)
- Electron Beam Exposure (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Measuring Magnetic Variables (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161443475P | 2011-02-16 | 2011-02-16 | |
| US201161561288P | 2011-11-18 | 2011-11-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201246261A true TW201246261A (en) | 2012-11-16 |
Family
ID=45768189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101104865A TW201246261A (en) | 2011-02-16 | 2012-02-15 | System for magnetic shielding |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8884253B2 (OSRAM) |
| EP (1) | EP2676168B1 (OSRAM) |
| JP (1) | JP5902201B2 (OSRAM) |
| KR (1) | KR101586202B1 (OSRAM) |
| CN (1) | CN103477285A (OSRAM) |
| RU (1) | RU2558646C2 (OSRAM) |
| TW (1) | TW201246261A (OSRAM) |
| WO (1) | WO2012110465A2 (OSRAM) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI562186B (en) * | 2010-11-13 | 2016-12-11 | Mapper Lithography Ip Bv | Charged particle lithography system and method for transferring a pattern onto a surface of a target and modulation device for use in a charged particle lithography system |
| JP2014209521A (ja) * | 2013-04-16 | 2014-11-06 | キヤノン株式会社 | ステージ装置、描画装置および物品の製造方法 |
| JP2015033162A (ja) * | 2013-07-31 | 2015-02-16 | キヤノン株式会社 | 駆動装置、荷電粒子線照射装置、リソグラフィ装置 |
| US9508526B2 (en) * | 2013-12-13 | 2016-11-29 | Ebara Corporation | Top opening-closing mechanism and inspection apparatus |
| CN104298299B (zh) * | 2014-09-29 | 2015-10-07 | 江汉大学 | 磁场精密补偿、调节系统及其构建方法 |
| US9952255B2 (en) * | 2015-10-30 | 2018-04-24 | Texas Instruments Incorporated | Magnetically shielded probe card |
| CN106937475A (zh) * | 2015-12-31 | 2017-07-07 | 中微半导体设备(上海)有限公司 | 等离子体处理装置 |
| TWI670502B (zh) * | 2018-10-25 | 2019-09-01 | 廣達電腦股份有限公司 | 訊號測試系統及其電波暗室 |
| CN110970191B (zh) * | 2019-12-25 | 2021-09-07 | 哈尔滨工业大学 | 一种多层屏蔽装置的退磁方法 |
| CN110993252B (zh) * | 2019-12-25 | 2020-10-30 | 哈尔滨工业大学 | 分布式退磁线圈系统、屏蔽装置及退磁方法 |
| CN110958830B (zh) * | 2019-12-27 | 2021-09-24 | 中国船舶重工集团有限公司第七一0研究所 | 一种复合式环境干扰磁场屏蔽系统 |
| CN111554470B (zh) * | 2020-05-15 | 2022-10-21 | 北京北方华创微电子装备有限公司 | 消磁装置及半导体加工设备 |
| US20230274911A1 (en) * | 2020-07-09 | 2023-08-31 | Lam Research Corporation | Adjustable geometry trim coil |
| JP7742877B2 (ja) * | 2020-09-18 | 2025-09-22 | ラム リサーチ コーポレーション | 磁場を用いるプラズマ放電の不均一性制御 |
| CN114823045B (zh) * | 2022-04-28 | 2024-01-05 | 北京航空航天大学宁波创新研究院 | 一种磁屏蔽室消磁线圈系统及其制备方法 |
| CN116068469A (zh) * | 2023-03-07 | 2023-05-05 | 杭州极弱磁场重大科技基础设施研究院 | 一种磁屏蔽房屏蔽层整体磁导率测试方法 |
| CN119924995A (zh) * | 2025-03-07 | 2025-05-06 | 景芮医疗科技(深圳)有限公司 | 一种用于磁共振的监护仪主机 |
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| SU856037A1 (ru) * | 1979-11-06 | 1981-08-15 | Минское Производственное Объединение "Горизонт" | Система магнитного экранировани масочного кинескопа |
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-
2012
- 2012-02-13 JP JP2013553894A patent/JP5902201B2/ja not_active Expired - Fee Related
- 2012-02-13 CN CN2012800187587A patent/CN103477285A/zh active Pending
- 2012-02-13 RU RU2013142077/28A patent/RU2558646C2/ru active
- 2012-02-13 WO PCT/EP2012/052431 patent/WO2012110465A2/en not_active Ceased
- 2012-02-13 EP EP12706000.2A patent/EP2676168B1/en not_active Not-in-force
- 2012-02-13 KR KR1020137024363A patent/KR101586202B1/ko not_active Expired - Fee Related
- 2012-02-15 TW TW101104865A patent/TW201246261A/zh unknown
- 2012-02-16 US US13/397,703 patent/US8884253B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20130043414A1 (en) | 2013-02-21 |
| JP2014511567A (ja) | 2014-05-15 |
| US8884253B2 (en) | 2014-11-11 |
| KR20140012097A (ko) | 2014-01-29 |
| JP5902201B2 (ja) | 2016-04-13 |
| CN103477285A (zh) | 2013-12-25 |
| RU2558646C2 (ru) | 2015-08-10 |
| RU2013142077A (ru) | 2015-03-27 |
| WO2012110465A2 (en) | 2012-08-23 |
| EP2676168B1 (en) | 2018-09-12 |
| EP2676168A2 (en) | 2013-12-25 |
| KR101586202B1 (ko) | 2016-01-18 |
| WO2012110465A4 (en) | 2012-12-27 |
| WO2012110465A3 (en) | 2012-11-01 |
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