TW201236067A - Joining apparatus - Google Patents

Joining apparatus Download PDF

Info

Publication number
TW201236067A
TW201236067A TW100137455A TW100137455A TW201236067A TW 201236067 A TW201236067 A TW 201236067A TW 100137455 A TW100137455 A TW 100137455A TW 100137455 A TW100137455 A TW 100137455A TW 201236067 A TW201236067 A TW 201236067A
Authority
TW
Taiwan
Prior art keywords
plate
cooling
heat treatment
wafer
processing container
Prior art date
Application number
TW100137455A
Other languages
English (en)
Other versions
TWI490933B (zh
Inventor
Naoki Akiyama
Masahiko Sugiyama
Hajime Furuya
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201236067A publication Critical patent/TW201236067A/zh
Application granted granted Critical
Publication of TWI490933B publication Critical patent/TWI490933B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16135Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/751Means for controlling the bonding environment, e.g. valves, vacuum pumps
    • H01L2224/75101Chamber
    • H01L2224/75102Vacuum chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/75251Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/75252Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/7526Polychromatic heating lamp
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/75283Means for applying energy, e.g. heating means by infrared heating, e.g. infrared heating lamp
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75302Shape
    • H01L2224/75303Shape of the pressing surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75312Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75314Auxiliary members on the pressing surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/755Cooling means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/755Cooling means
    • H01L2224/75501Cooling means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7565Means for transporting the components to be connected
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757Means for aligning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/759Means for monitoring the connection process
    • H01L2224/75901Means for monitoring the connection process using a computer, e.g. fully- or semi-automatic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/75981Apparatus chuck
    • H01L2224/75985Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81001Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812Applying energy for connecting
    • H01L2224/81201Compression bonding
    • H01L2224/81203Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H01L2224/81204Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812Applying energy for connecting
    • H01L2224/8122Applying energy for connecting with energy being in the form of electromagnetic radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06513Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/94Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01042Molybdenum [Mo]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Description

201236067 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種接人 之基板彼此加以抵壓進行接人者糸將具有金屬接合部 【先前技術】 近年來,於半導體元件 上邁向元件之高積體化。另i方下%為「元件」)之製造
之複數元件以配線進行造极才^面,當將經過高積體化 因為配線長度增加造成配線::製品化之情況’會有 大之問題。 &配線電阻變大、以及配線延遲變 是以,有人提議採用將丰導 維積體技術。此三維積體技 ①牛做3維積層之3 進杆2 Μ 日m *,係例如使用貼合裝置來 以下稱為「晶圓」)之貼合。貼合 r純m ϋ疋° (例如於上面載置晶圓)以及可動台 進”弁:、口王對t配置’可將晶圓吸附保持於下面而 „订 於固疋台與可動台内係分別内設有加熱 盗。再者此貼合裝置係將2片晶圓加以疊合之後一邊 猎?加熱器來加熱晶圓、—邊藉㈣定台與可動台來施 加何重以抵壓晶圓,使得2片晶圓受到貼合(專利文獻 I)。 先前技術文獻 專利文獻1日本特開2004-207436號公報 【發明内容】 另一方面,將2片晶圓加以接合之際,有將形成於 5 201236067 晶圓表面之金屬接合部彼此加以接合之情況。於此種情 況下’必須將接合部以高溫之既定溫度—邊加熱一邊抵 壓。亦即,必須依序進行:先將晶圓加熱至蚊溫度之 月ίι熱處理製程’之後在晶圓之溫度維持於既定溫度之狀 態下抵壓該晶8]之接合製程;以及之後冷卻晶圓之後熱 處理製程。 但疋,於則熱處理製程,由於前述既定溫度為高 溫,故若使用專利文獻〗之貼合裝置,則要將晶圓加熱 至既定溫度會钯費相當時間。並且,若將晶圓予以急速 加熱,恐接合部彼此無法被均勻地加熱,而必須於既定 加熱速度以下來加熱晶圓。此外,由於前述既定溫度為 咼溫,故即便於後熱處理製程為了冷卻高溫晶圓也需耗 費時間。並且,當將接合部彼此加以合金化接合之情 況,若急速地冷卻晶圓則接合部之強度、物性恐發生變 化,故必須以既定冷卻速度以下來冷卻晶圓。再者接 合製程所7匕費之時間係由接合部所使用之材料等所決 定而無法縮短。 如岫述般於具有金屬接合部之晶圓彼此接合之 際’由於必々進行晶圓之溫度調整,故結果上於晶圓彼 此之接合需要花甚多時間。因此,會導致晶圓接合處理 之生產量降低。 本發明係鑒於前述情事,其目的在於高效率地進行 具有金屬接合部之基板彼此的溫度調整、提高基板接合 處理之生產量。 201236067 為了達成前述目的’本發明之接合裝置,係將具有 金屬接合部之基板彼此加以接合者;其特徵在於係具 有:處理容器,其下面形成有開口;熱處理板’係配置 於該處理容器内’用以載置該基板進行熱處理;加壓機 構,係於該處理容器内對向於該熱處理板而設置,將該 基板朝該熱處理板側進行抵壓;環狀支撐台’係於該處 理容器之内面沿著該處理容器之開口而設置,將該處理 容器與該熱處理板之間加以氣密阻塞,並支撐該熱處理 板;以及冷卻機構,係設置於該熱處理板之下方且為該 支撐台之内侧,用以冷卻該熱處理板;其中該冷卻機構 係具備有··冷卻板,其上面和該熱處理板呈平行設置, 内部呈現中空;連通管,係連通於該冷卻板内部來對該 冷卻板内部供給空氣;以及,升降機構,係使得該冷卻 板上下動作;於該冷卻板之下面形成有和該冷卻板内部 相連通之複數貫通孔’從該連通管對該冷卻板内部所供 給之空氣係從該冷卻板之貫通孔被排出。 依據本發明,由於在熱處理板下方設有冷卻該熱處 理板之冷卻機構,故可高效率地調整基板之溫度。亦 即’利用熱處理板來將基板加熱至既定溫度之際,當快 要超過既定加熱速度或是快要超過既定溫度之情況,可 藉由例如上升冷卻機構來接觸於熱處理板之下面以冷 :熱處理板。再者,藉由調整對冷卻機構所供給之空氣 里’可進一步調整冷卻機構所達成之冷卻速度,是以可 高效率地進行基板之溫度調整。 7 201236067 本發明亦可採行之做法為,該冷卻機構係進 有冷部水流通板’係於該冷卻板之下方以將該處理容哭 ,口全部加以阻塞之方式所設置,其内部形成有“ ㈣水之冷卻水路;於該冷卻水㈣㈣減將該冷卻 水流通板触直方向純貫通之複數貫通孔;自該冷卻 板之貫通孔所排丨之空氣係通過該冷卻水流通板之貫 通孔而從該冷卻水流通板之上面朝下面排出。 本毛明亦可採行之做法為,該加壓機構係具有: :構:牛’係氣密地連接於該處理容器之頂板;抵壓構 m?於該彈性構件之下端;空氣供給管, __ ^理谷态之頂板、該彈性構件以及該抵壓構件 空間供給壓縮空氣;以及空氣排出管,係將被 =之壓縮空氣加-出;於該空氣排出管係設有冷卻 ,、將冰通於該空氣排出管内部之壓縮空氣加以冷 部。 ,依據本發明,可高效率地進行具有金屬接合部之基 板彼此的溫度調整、可提高基板接合處理之生產量。 【實施方式】 以下針對本發明之實施形態做說明。圖1係顯示 具有抵壓料接器1之接合裝置之構成概略的縱截 面圖。圖2係顯*具有減用連接器1之接合裝置10 之構成概略的橫截面圖。 接合裝置10係如圖3所示般將例如2片做為基板 之曰曰圓Wu、WL加以接合。以下,有時將配置於上側之 201236067 晶圓稱為「上晶 下晶圓Wl 圓Wu」’而將配置於下側之晶圓稱為 接合部τ 3各晶圓Wu、WL分別具有複數之金屬
Wu、w ^ :此外,抵接各接合部Ju、JL使得晶圓 晶圓1㈣成做為疊合基板之疊合晶圓Wt,將 二此外,在進行晶圓矶 1之間塗佈接㈣t\如圖3所示般於晶圓^、 而成為暫時接人狀;晶圓WU、WL藉由該接著劑2 合,即俤、隹- j 般’藉由接著劑2做暫時接 I、%=送=Wu、WL之對準後再進行該晶圓 此外,如圖3所可防止於晶圓Wu、Wl產生偏移。 接合部t】=右在暫時接合之狀態下,會成為於 杆也2 成有間隙之狀態。藉此,於接合時進 而…空之際位於接合部間之環境氣氛受到抽引 所二方止於接合部Ju、JL間發生空孔(void) ’此為效果 _ 此外接著劑2係使用受到接合時之熱處理而合 蒸發、昇基去。μ*从 m 幵爭有此外’於本實施形態’例如於接合部 使用叙,於接合部4使用鍺。 时接合裴置10,如圖1以及圖2所示般,具有熱處 單元20與接合單元Μ在水平方向之γ方向上依序並 排體連接之構成。熱處理單元2〇與接合單元21係經 由閘閥22來氣密地連接著。 熱處理單元2〇係具有可將内部密閉之處理容器 30。在處理容器3〇之接合單元21的相反侧之側面係形 成有$合晶圓WT之搬出入口 31,於該搬出入口 31設 9 201236067 有閘閥32^此外,於處理容器3〇之接合單元2ι側的側 面形成有疊合晶圓WT之搬出入口 33,於該搬出入口 % 設有上述閘閥22。 於處理容器30之底面形成有吸氣口 34。於吸氣口 34連接有吸氣管36,該吸氣管36係和真空泵用以 將處理容器30之内部環境氣氛減壓至既定真空度)相連 通。 …於處理容器30之内部係設置有:第!熱處理板价 係載置疊合晶® WT進行加熱以及冷卻;上部加熱機構 41,係將載置於第1熱處理板40之疊合晶圓Wt從上方 加熱,以及,搬送機構42,係於熱處理單元與接人 單元21之間將疊合晶圓Wt連同後述之搬送環的加二 搬送。在上部加熱機構41方面係使用例如利用韓射軌 進行加熱之卣素燈加熱器或是電熱器等。於第丨埶搜' 板40係例如圖!所示般内設有:加熱器43,係做= 由供電而發熱之加熱機構;以及做為冷卻機構之々媒^ 路44 ’係藉由於其内部流通冷媒來冷卻熱處理板? ^ 冷媒流路44係配置於加熱器43之上方。 冷媒流路44係如圖4料般相連射冷媒供終 供給冷物及冷媒排出管: 44#㈣价料财面錢用於乾燥空 有水所得者。於冷媒供給管45係分別連接 45供給做為冷.乾燥空氣與水之 场原47與W水源48。在乾燥空氣與水之合流部位 10 201236067 Ο Ο 。又置有混合咨49 ’藉由該混合器49來混合乾燥空氣與 水使得水霧化,而以冷媒之形式經由冷媒供給管乜二 給於冷媒流路44。於冷媒排出# 46設有將通過冷媒、: 路44後之冷媒加以冷卻之熱交換器5〇,藉由將流經二 媒排出官46内之冷媒加以冷卻來使得該冷媒中之: 集’以排水(drain)之形式加以回收。所回收之排水係= 由循環配管51而供給至冷媒供給管45之混合器的= ^游,再次藉由混合器49來和乾燥空氣混合而再热 冷媒來利用。此外,在熱交換器50方㈣例如^ 般?,於峨52者。此外,第1熱處】板 之加一度以及冷郃溫度、上部加熱機構“所達 之加熱溫度係藉由例如後述控制部細來受到 成 於第!熱處理板40之下方設有例如3支工 53,用以將疊合晶圓Wt從 泽麵 升降銷53可藉由未圖示之升_ ==降。 。熱處理板40之中央部附近例如 : 孔54,用以將該第旧處理板4 言$貫通 外,升降銷53可插通貫通孔 f度方向貫通。此 之上面突出。 、孔54而從第1熱處理板4〇 搬送韻42係如目丨所示般,有在 上分別水平設置之上部搬送機構42a與下部搬送^ 42b。上部搬迗機構42a與下部搬送機構4 構 狀。上部搬送機構42a與下部搬送機構仙可_形 示之驅動機構分別獨立地朝水平方向以及上下 201236067 J多動。土部搬送機構42a以及下部 5以及圖6所示般 、麵°係如圖 保持部心ϋ ^ :二有大致Μ型截面形狀之 成。上部77相向之方式加以連接而形 持部下部搬送機構4料藉由保 送環60加將#合晶18 %連同該搬 形成為大致圓:狀=°係如圖™所示般 WT之直《來得略大,而於二,:直《純叠合晶圓 周緣部設有用以伴持聶人日衣6 0之底面、開口之内 送環⑹之外周部係如圖 =謂構件61。於搬 此突出部62係由搬送機構%有-對突出部62, 藉由搬送機構42來__=^⑼所保持。在 般,使得搬送機構42移 際,如圖7(a)所示 搬送環60戶斤位於之高度動=持部55之開口部分間、 持在該高度下將搬送機:冓圖7(b)所示般,於維 之後,使得搬送機構42上―步朝水平方向移動。 送環6 0之突出部6 2 ’而利保持部5 5來保持搬 6〇(參見圖7(c))。 機構42來保持搬送環 ,容器70具有將容器本體?!才與内部之處理容器7〇。 官73來連接之構成。屏蔽波^ =利用屏蔽以 成為伸縮自如,頂板72# 3係於鉛直方向 方向上移動自如。 此屏蔽波紋管73 於容器本體71之熱處理 直 U側之側面形戍有藏 接合單元21係且右 ^ 器7 〇具有將容器本體=内部之處理容器7 〇。處 201236067 設有上述 合晶圓WT之搬出入口 74,於該搬出入口 74 閘閥22。於容器本體71之側面形成有吸氣口 75。於吸 氣口 75連接著吸氣管77,此吸氣管77係和用以將處理 容器70内部之環境氣氛減壓至既定真空度的真空展% 相連通。此外,於本實施形態,係以吸氣口 75、真空戈 76、吸氣管77來構成第2減壓機構。此外,於容器本 體71之底面係形成有例如圓形的底部開口 78,用以# 置後述冷卻機構1〇〇。 於處理容器70内部之頂板72處設有將後述第2熱 處理板90上之疊合晶圓wT朝第2熱處理板90側進行 抵壓之加壓機構80。加壓機構80係具有:抵壓構件81, 係隔著抵壓用連接器1來抵壓疊合晶圓Wt;支撐構件 82 ’係以環狀方式安裝於頂板72 ;以及,加塵波紋管 83 ’係將抵壓構件81與支撐構件82加以連接,而於鉛 直方向上伸力§自如。抵壓構件81之直經係大於叠合晶 圓WT之直徑。於加壓波紋管83設有對於加壓機構80 之内部(亦即由抵壓構件81、加壓波紋管幻、支撐構件 82,及頂,72所包圍之㈣空間)供給例域縮空氣之 空氣供給官83a以及將供給至内部空間之空翁予以排出
>設有冷卻概套83C,用以對流 之内部而被排氣之空氣進行冷 13 201236067 卻。冷卻襯套83c可使用例如水冷式之被稱為殼管式熱 交換器。於空氣排出管83b設有用以調整從該空氣排出 管83b所排出之空氣量的調整機構(未圖示因此,藉 由調整由空氣供給管83a所供給之壓縮空氣供給量、供 給壓力以及自空氣排出管83b所排出之空氣量,可—邊 從空氣排出管83b來排出壓縮空氣一邊將加壓波紋管 83内之壓力調整為既定壓力。換言之,可分別獨立地控 制加壓波紋管83内之壓力以及流通於加壓波紋管83内 之壓縮空氣量。此外,於抵壓構件81之内部内設有例 如藉由供電而生熱之加熱器81a,可藉由調整對加壓波 紋管83所供給之壓縮空氣量來調整從加熱器8U對加 壓波紋管83内之壓縮空氣所散放之熱量。從而,可分 別藉由調整對加壓波紋管83内所供給之壓縮空氣之流 量以及加熱裔81a之溫度來透過抵壓構件81之熱傳遞 而將抵壓用連接器丨之溫度設定為所希望之溫度。此 =,由於在加壓機構8〇之内部封入有壓縮空氣,故加 I機構80之加壓波紋管的剛性係大於處理容器% 蔽波紋管73之剛性’以承受此壓縮空氣所產生之 抵壓^連接器丨係連接於抵壓構件81之下面。抵 連接H 1係基於使用直徑大於疊合晶圓%之抵壓 81來對豎合晶圓Wt以面内均勻之荷重進行抵壓 部連接哭°又者,如圖1所示般,係由大致圓盤狀之上 °。84與大致圓錐梯形狀之下部連接器85經一體 14 201236067 構成者。上部連接諸與下部連接器85以 看係配置成為同心圓狀。此外,且 之下部連接器μ之下底直徑和疊合η形狀 同,下部i表接哭以> , τ立σ日日_ wt直杈相 之上底之直徑大於上部連接5|之古 :::壓用她輪^^ Ο
G 本二T:壓用連接器1之形狀詳述之。如前述般一 認之結果’即便將圖22所示之大致圓錐; 晶HW =,301之梯形上底朝下方配置,以直徑大於 301 之隹^構件3〇2來透過直徑有別於晶圓W之連 w ° 、仃抵壓之情況,依然荷重係集巾於疊合晶圓 發周緣部。關於此點,本發日转經騎證的結果, y若使用連接器3()1來抵麗疊合晶圓,則於連 m外周緣部會因為例如施加圖8所示之應力π ;、接器301產生撓曲,此將造成於連接器3⑴之中 中向上之應力F2、而於連接器3〇ι之外周緣 =中向下之應力F3,在抵壓疊合晶圓^之際無法得 到面内均勻的荷重。 關於此點,本發明者確認到即使是使用和連接器 3〇1同樣地為大致圓錐梯形狀之連接器之情況,例如圖 9所示般,、要將大致圓錐梯形狀之連接器训之上底朝 上方配置,則作用於該連接器31G之應力F4會分散於 連接器310之下底,可避免應力集中於連接器31〇之外 周、,彖邻但是,比較連接器31〇與連接器301之情況, 201236067 由=接$ 31G之上底面積小於連接器3G卜故為了 _ 由連接器310來得到既定抽厭#去 又马了错 器3〇 1之情況必項接古㈣何重’則相較於使用連接 氣•在空:===之加壓- 之:==:===?連接器 + 』仵到面内均勻荷重之形 想到了抵壓用連接器!之形狀若為大致圓= 之上部連接H 84與大致圓轉形狀之下部® = 二=、並且於上部連接器84與下部連接器Μ: ; 6做為中間部為有效的做法。是以,分 Μ V;連接f 84以及下部連接器85之尺寸而進行 Λ 的料,經㈣时認了 日日0 WT之直徑與收縮部%之 要ι 口 則可良好地進行疊合晶《IWT之抵I1〜1:1 減ΓΓ,針對本發明者所實施之試驗做描述。在使用 抵壓用連接器i進行疊人s 在使用 成抵壓用連接器;!之材T之接合之際,使得構 8 4夕心 枓的彈性模數、以及上部連接写 直=下,85之直徑以及疊合晶圓 直仏做變化,針對作用於疊合 行了確認試驗。此時,第 7内的荷重進 機Μ 41 # "、、處理板4〇以及上部加埶 9二 度係定為靴,後述第2 里: 之加熱溫度係定為43(TC。此外,做為上 反 41係使用鹵素燈加熱器。 σ σ.、、、機構 關於抵壓用連接器1之形狀,上部連接 16 201236067 Ο Ο 徑係設定為350mm,疊合晶圓WT之直徑以及下部連接 器85之下底之直徑係設定為2〇〇mm,抵壓用連接芎1 之高度、換言之從上部連接器84之上面到下部連接器 85之下底的距離係設定為35mm,從下部連接号%之 下底到收細部86之尚度、換言之從下部連接器μ之下 底到上底之距離係設定為19mm。再者,抵壓用連接器 1之材質係分別採用彈性模數為200GPa之不鏽鋼、彈 性模數為41〇GPa之氮化矽(SiC)、彈性模數為62〇Gpa =超硬合金’針對不同材質所形成之抵壓用連接器1使 件收縮部86之直徑又在10〇mm〜2〇〇mm之間變化之情 =確認了於疊合晶圓Wt之面内所施加應力之最大: 、取小值之差(亦即最大應力差)。其結果示於圖1〇。 係就㈣部86之直徑X以收縮量的方式表 不^、以最大應力差為縱軸,顯示了使用彈性模數 大應疊合晶圓〜之際之最 收缩量里Μ糸°如圖1G所示般,確認了將 1之彈二i J60〜180mm之情況,不論抵壓用連接器 成Ζί為何,各抵壓用連接器1之最大應力差會 在最適值,果可知’抵壓用連接器1之收縮量存 料衫切魏㈣連制1之材 抵壓用i接針對使用了彈性模數為41 〇 g ρ a之氮化石夕的 3、下將上部連接㈣之直徑設定為 下錢接器85之下底之直徑以及疊合晶圓% 17 201236067 之直徑設定為300mm之情況,將上部連接器84之直徑 設定為525mm、下部連接^ 85之下底之直徑以及疊合 晶圓WT之直徑設定為300mm之情況,以及上部連$ 84之直徑狀為350軸、下部連㈣85之下底之 圓WT<直徑設定為鳥m之情況下,料 之收縮量產生變化,確链了此時= 大應力差。、相了該應力之最大值 '、p最大應力差。其結果示於圖u。 器85之下底==量與疊合晶圓^之直捏(下部連接 縱軸H見了將^比表示於橫軸、以最大應力差為 行抵壓之際以各抵壓用連接器1進 徑之比之關係。應力差和收縮量與疊合晶圓WT之直
如圖1 1所;J&/L …徑二 ==縮=圓 接器84之直徑、下加、土 則不输上部連 何,各抵壓料接3^、接β 85之下底之直徑的尺寸為 1不論形成該抵壓用連:器果彈=連, 連接益84之直徑以及下部連接器以之下底 。Ρ 寸為何’藉由將收縮量與下部連接器85之下底:直= :比設定為既定值’可使得疊合晶内: 應力差成為極小。 円之取大 此外,亦可判斷只要疊合晶圓^之面内之最大應 18 201236067 力差在15MPa以内即能以面内均勻荷重來進行抵壓。 從而’為了使用直徑大於疊合晶圓WT之抵壓構件81 來將豐合晶圓WT以面内均勻荷重進行抵壓,則抵壓用 連接器1之收縮量、亦即收縮部86之直徑與下部連接 器85之下底之直徑之比為〇.7 : 1〜1 : 1即可,更佳為 0.8 : 1〜〇.9 : 1。
此外,於上述試驗中,雖使用由上部連接器84與 下部連接器85所一體形成之具有收縮部86之抵壓用連 接器1,惟抵壓用連接器1之形狀不限定於以上之實施 形態。經本發明者確認得知,亦可取代抵壓用連接器i, 而例如圖12所示般’於上部連接器84與下部連接器85 之間形成做為中間部之收縮部86之際,使用具有°圓筒 形狀之連接部87的形狀之抵壓用連接器21〇,或亦可如 圖13所示般’使用由直徑和下部連接器%之下底之直 徑相同之大致圓盤狀之圓盤部88與下部連接器85之底 面-體形成之抵壓用連接器22G。再者,亦可如圖Μ f示般,使用具有中間部心及圓盤部88兩者之連接 :230。不論使用何種連接器,均能將原本施加於大面 均勻荷重均勻地施加於小面積上。 _ …,狀雖形成為銳角或直角,惟 二r ’亦可如圖15所示般,藉由使得連接部87之 卜=以側視上朝該連接部87之中心方向凹陷,來將 M6形成為半圓形狀。於此情況下,可防止減 19 201236067 何重所產生之應力华中於收综部 哭Η1η μ P 6而造成抵麼用連接 器1 21〇、220、23〇之收縮部%出現破損。 屬播m以上之抵壓用連接器係和加壓機構80之抵 ,構1 牛81分別形成,惟減構件81與抵壓用連接4 可一體形成。且體而山,s,, _ 使时万 壓構件8】π 所示般,亦可於抵 下面僅接合抵壓用連接器1當中之下部連 接器85的部分。於廿、.牙下 件〜i ^ 亦可取代内設於抵壓構 85。春 仏,改於下部連接器85内設加熱器 兩:老了Z部連接器85内設加熱器…之情況,將無 ^連接:介設於加熱器8U與疊合晶圓Wt之間的抵屋 w =之熱容量,是以可更高精度地進行疊合晶圓 日士^度㈣,再者,可縮短疊合晶® WT之升溫所需 =j。再者,藉由使得抵壓構件81與抵壓用連接器i ^體形成,由於不會出現在抵壓構件81與抵壓用連 接觸面的熱傳遞之耗損,而可提升加熱器85a 了 i 〇 B曰圓Wt之熱傳遞效率。此外,於圖16中係描繪 、、將=壓用連接||丨與抵壓構件81予以—體形成之情 况田然亦可使得抵壓用連接器21〇、220、230與抵壓 構件81來一體形成。 ^其次針對第2熱處理板90進行說明。如圖1所示 般在處理容器7〇之内部且為加壓機構8〇之下方之對 向於4加壓機構8〇的位置處係設置有用以載置疊合晶 3 進行熱處理之做為載置部的第2熱處理板9〇。於 2熱處理板90係内設有例如利用供電來生熱之加熱 20 201236067 曼。加埶二 ==材料係使用例如氮化紹等陶 例如對應; 係於内周加熱器曰9Υ之夕T卜側=成:外^加熱器93’ 於内周加熱it 92進行溫狀’可獨立 周加熱器93之加熱严产传一 士 β σ.、、、态92以及外 护制 皿又係糟由例如後述控制部200來
圖1所示般,於第2熱處理板9〇之外周 送之=Γ溝槽94,用以收容被搬送機構42所搬 所:开1=保持構件61。切口溝槽94係如圖2 之伴持槿“喊理板9G之外周部之和搬送環60 保持構件61之位置相對應之3部位。 如圖1以及圖17所示私,贫 部係藉由於容器切71 4 2熱處理板9G之外周 部開口 78所二置之=之内面沿著該容器本體71之底
而成為露出於處理容器71外=:=部開口 78 板90之下面側、換言 =、弟2熱處理 ,晶圓= =,9。之熱傳遞到容器本 構:,= _。〗配置里:9〇形成為同心圓狀。於 板90之間保持氣密'狀封f 使得支樓台%與熱處理 孔錢態。密封材搬係使用例如耐熱 201236067 性金屬〇型環等。 於第2熱處理板%與支稽台 Π以及圖18所示般分別形成有 卜周、、、=係如圖 部術以及凸緣部95a传以 =9〇a、9心凸緣 力的方式m丄 壓密封材102之方向施 力的方弋错由卡合構件103所保 例如圖以及_ 18所示般, ^構件⑻係 之上部卡人” 與凸緣部90a接觸 1〇5 Lt 與凸緣部95a接觸之下部卡合部 將上部卡合部104與下部卡合部1〇5加衰 結之連結部1〇6。連姓 連 絲,藉由和設置於具有公螺紋之公螺 母螺纹進行螺固,可藉由上部卡合部104以 來朝抵壓密封材102之方向上施力, 二11、<理容ϋ 7G内維持氣密狀態。此外,上部卡 口部104與下部卡合部奶以及連結部刚係由例如不 鏽鋼等具有卡合構件所需強度且具有彈性之金屬材料 二斤構成藉由於連結部1〇6使用具有彈性之材料,則將 第2熱處理板9G以加熱器91來加熱而於第2熱處理板 9二與支撐台95之間產生熱膨張差之際,例如圖19所示 般了藉由撓曲連結部來防止卡合構件IQ]受到破 壞、並可維持將第2熱處理板9〇與支撐台95之間的氣 岔。此外,如圖18所示般,於上部卡合部1〇4設有朝 凸緣部90a之上面突出之爪1〇4a,於下部卡合部1〇5 設有朝凸緣部95a之下面突出之爪1〇5a,而如圖19所 示般,即便於連結部1〇6發生撓曲之情況,也可防止卡 22 201236067 合構件103自各凸緣部90a、95a脫落。 冷卻機構100係如圖17所示般,具有:内部中空 之大致圓盤狀冷卻板110,係和熱處理板90呈平行設 置;連通管111,係延伸於鉛直方向所設,連通於冷卻 板110之中空部分;以及冷卻水流通板112,係於冷卻 板110之下方和該冷卻板100呈平行設置。冷卻板110、 連通管111以及冷卻水流通板112係利用熱傳導性優異 之例如銅合金等所形成。 冷卻板110之構成包括:接觸部120,係和熱處理 板90之内面呈平行設置,藉由接觸熱處理板90之内面 來冷卻熱處理板;散熱部121,係和接觸部120呈平行 設置,以既定配置形成有貫通孔;以及外周部122,係 包圍接觸部120與散熱部121之外周。於散熱部121, 連通於冷卻板110内部之複數貫通孔123係以既定圖案 來形成。於散熱部121之中心係連通設置有連通管 111。再者’連通管111係插通冷卻水流通板112且相 對於冷卻水流通板112以滑動自如方式設置著。藉此, 藉由未圖示之升降機構來使得連通管111上下動作,可 使得冷卻板110進行上下動作。 連通管111係連接有空氣源(未圖示)而可對冷卻板 110供給做為冷媒之空氣。經過連通管111而被供給至 冷卻板110之中空部分的空氣係從散熱部121之貫通孔 123被排出。 於散熱部121之下面設有朝下方突出之突出部 23 201236067 124。再者,外周部丨22亦被延伸形成至和突出部124 前端為相同位置,在使得冷卻板110下降之際,可形成 由突出部124、外周部122以及冷卻水流通板112所圍 繞而成之空間S。 如圖17所示般,於冷卻水流通板112形成有其内 部可流通冷卻水之冷卻水路13〇。冷卻水路13〇係連接 著冷卻水管131,而可將冷卻水源(未圖示)所供給之冷 卻水供給至冷卻水路130。再者,於冷卻水流通板112 係和散熱部121同樣地以既定圖案形成有貫通孔132, 可將自散熱部121所排出之做為冷媒之空氣排出至冷卻 機構100之外部。從而,冷卻機構1〇〇可藉由通過連通 官111而對其内部供給做為冷媒之空氣來冷卻冷卻板 110’並可藉由升降機構(未圖示)使得連通管1Π上升而 讓冷卻板110接觸於第2熱處理板9〇之下面來將熱處 理板90利用冷卻板11〇做冷卻。此時,藉由對冷卻水 流通板112之冷卻水路13〇供給冷卻水來將冷卻水流通 板112予以冷卻,可將通過貫通孔ι32之空氣加以冷 卻,防止將尚溫空氣排出至冷卻機構1〇〇外部。再者, 藉由使得連通管1U下降,讓散熱部121下面之突出部 124與冷卻水流通板112進行接觸來將冷卻板11〇連 同ί、、’&於連通管1 1 1之空氣加以高效率地冷卻。 於以上之接合裝置如圖1所示般設有控制部 200。控制部200係例如電腦,具有程式儲存部(未圖 示)私式儲存部係儲存有用以控制接合裝置1 〇之疊合 24 201236067 晶圓wT之處理的程式 用以控制上述各種處理裝置、搬送穿 存有 作、實現接合系統: 4驅動系統之動 述程式係記錄於^的程式。此外,前 ㈣、光碟(CD)、光二:二取式硬碟(_、軟碟 記從該記._Η安裝至 Ο
Aaaiw之;&人老以上構成之接合系統1所進行之最 ㈠曰圓τ之接5處王里方法加以說明。圖2 〇係顯示相二 晶圓接合處理之主要製程觸 ’、係 合裝置ίο之各機器動作狀心二s 21係顯不接 厶駐蓄人 時間圖m係顯示接 口、 宜σ晶圓WT之加熱溫度、對加壓機構8ω 之加壓波紋管83内所供給之壓駐氣之壓力m0 WT所施加之荷重、熱處理單元20 之經時變化。及接合早兀η内之環境氣氛壓力 3 w於外,之對準裝置(未圖示)進行上晶圓Wu 與下曰:0上之位置調整來疊合。此時,於晶圓w:; Μ彳®切事級佈接著劑2, ;"口,用接者來暫時接合,而形成疊合日 WT1(圖20之製程Sl)。 /又且口日日ϋ 曰曰81 Wt1係藉由晶圓搬送裝置(未圖~η 來搬送至接合裝置10。 q不) H) H開散熱處理單元2G 32,利用曰曰圓搬送裂置(未圖示)將疊合晶圓wt1搬入第 25 201236067 1熱處理板40之上方。 接著使得升降銷53上升,將疊合晶圓WT1從未圖 示之晶圓搬送裝置轉送至升降銷53之後,使得升降銷 53下降,將疊合晶圓WT1載置於事先載置於第1熱處 理板40之搬送環60的上面。之後,關閉閘閥32,利用 真空泵35使得處理容器30内部之環境氣氛被減壓。之 後,疊合晶圓WT1被第1熱處理板40加熱至第1溫度 例如350°C(圖20以及圖21之製程S2)。此時,為了將 疊合晶圓WT1之接合部Ju、JL彼此均勻地加熱,乃以 既定加熱速度例如10〜50°C/分之加熱速度來加熱。此 時,和第1熱處理板40之加熱併行,也利用上部加熱 機構41進行加熱。藉此,能以於疊合晶圓WT1之上晶 圓Wu與下晶圓WL之間不致產生溫差的方式進行加 熱。再者,熱處理單元20内之壓力係被減壓至既定真 空度例如l〇Pa。 一旦疊合晶圓WT1被加熱至第1溫度,則開放閘 閥22。接著,藉由搬送機構42使得和搬送環60 —同被 載置於第1熱處理板40之疊合晶圓WT1移動至接合單 元21,讓疊合晶圓WT1和搬送環60 —同載置於第2熱 處理板90。一旦疊合晶圓WT1和搬送環60 —同被載置 於第2熱處理板90,則搬送機構42從接合單元21迴避 至熱處理單元20,關閉閘閥22。 之後,疊合晶圓WT1因第2熱處理板90而被加熱 至第2溫度例如430°C。疊合晶圓WT1係以例如10〜50 26 201236067 °c/分之加熱速度來被加熱。此外,處理容器70之内部 環境氣氛係於關閉閘閥22後被減壓至既定真空度例如 O.OOlPa,而維持於該真空度。此時,因處理容器7〇之 内部成為負廢,故例如雙到施加於頂板7〇之壓力與處 理容器70内部之壓力之差的影響而對頂板7〇產生向下 之力。藉此,屏蔽波紋管73收縮,抵壓用連接器i與 疊合晶圓wTi接近至既定距離。此外,如圖21所示般,
〇 ,=加壓機構80、亦即對加壓波紋管83内供給壓縮空 =、處理容器70内之壓力受到減壓之狀態下,加; 機構80㈣之壓力也被_在減壓魏㈣力之狀態 為了避免受到加壓機構⑽㈣之壓力與處理 圓wTl施之力壓力/的影響,而於不希望之時機對疊合晶 Ti她加何重之故。 度、2二^將疊合晶圓Wt1之溫度維持於第2溫 件81下降。^機構8〇供給壓縮空氣,來使得抵壓構 抵虔用連接Γί ’使得在抵壓構件81下面所連接著之 WT1’將該義二。之下部連接器85抵接於疊合晶圓 第2熱處^口曰曰圓^以既定荷重例如5刪來抵麼於 間、^如10板%側。此外,4合晶圓wt1受到既定時 以及圖21 2鐘的抵壓’來接合疊合晶圓Wt1(圖20 氛處於_,^S3)。此時’由於處理容11内之環境氣 可在接合部i故接合部WL間之環境氣氛受到抽引, 外,疊/、JL間未產生空孔之情況下進行接合。此 曰曰圓WT1之溫度亦可利用例如抵壓構件μ内 27 201236067 之加熱器、冷卻機構100來維持在第2溫度。再者,亦 可藉由調整對加壓波紋管83内所供給之壓縮空氣量來 調整抵壓構件81之溫度,使得疊合晶圓WT1之上晶圓 Wu與下晶圓WL之溫度被同步化。 併行於以接合單元21所進行之疊合晶圓WT1之接 合,熱處理單元20係藉由晶圓搬送裝置(未圖示)而被搬 入新的疊合晶圓WT2,載置於第1熱處理板40上。此 外,將疊合晶圓WT2搬入熱處理單元20之際,為了縮 小熱處理板40與疊合晶圓WT2之溫差,熱處理板40 之溫度係被冷卻至例如150°C。一旦載置於第1熱處理 板40上,則疊合晶圓WT2會被第1熱處理板40以及 上部加熱機構41而加熱至第1溫度例如350°C(圖20以 及圖21之製程T1)。 之後,疊合晶圓WT1於載置在第2熱處理板90之 狀態下被冷卻至例如第1溫度之350°C。為了防止接合 部Ju、JL之強度、物性改變,疊合晶圓WT1係以既定 冷卻速度例如10〜50°C/分之冷卻速度受到冷卻。疊合晶 圓WT1之冷卻係使得冷卻機構100之冷卻板110上升, 讓該冷卻板110接觸於第2熱處理板90之下面來進行。 一旦疊合晶圓WT1被冷卻至350°C,首先,被載置 於第2熱處理板90而加熱至350°C之疊合晶圓WT2係 藉由上部搬送機構42a所保持。其次,打開閘閥22,利 用下部搬送機構42b將結束了接合之疊合晶圓WT1連 同搬送環60從第2熱處理板90搬送至熱處理單元20。 28 201236067 接著’維持在閘閥22開放之狀態下,將被保持在上部 搬送機構42a之疊合晶圓Wt2搬送至接合單元21,隨 同搬送環60來载置於第2熱處理板90。其次,上部搬 送機構42a退避於熱處理單元20,關閉閘閥22。之後, 疊合晶圓WT2被第2熱處理板90加熱至第2溫度之43〇 °C,利用抵壓構件8〇以及抵壓用連接器i使得疊合晶 圓WT2被抵壓接合(圖20以及圖21之製程T2)。併行 0 於豎合晶圓wt2之抵壓,於熱處理單元2〇,被保持於 上部搬送機構42a之疊合晶圓WT1係隨同於搬送環6〇 被載置於第1熱處理板40。 於接合單元21進行疊合晶圓WT2之接合的過程 中’於接合單元21結束了接合而被載置於第1熱處理 板40之狀態下的疊合晶圓Wti被第1熱處理板4〇來 冷卻至第3溫度例如15〇。(:(圖20以及圖21之製程S4)。 此時’於第1熱處理板4〇之冷媒流路44被供給混合有 0 於乾燥空氣霧化之水。 之後’將熱處理單元20内之壓力開放至大氣壓, 使得升降銷53上升,將疊合晶圓WT從第丨熱處理板 4〇轉送至升降銷53。接著,打開閘閥32,使得疊合晶 圓WT1從升降銷53轉送至晶圓搬送裝置(未圖示),^ 接合裝置10搬出疊合晶圓WT1。 一旦叠合晶圓WT1從熱處理單元20被搬出,接著 於開放閘閥32之狀態下將新的疊合晶圓Wt3轉送至升 降鎖53,其次載置於第1熱處理板40。然後,利用第1 29 201236067 熱處理板40以及上部加熱機構41將疊合晶圓wT3加 熱至第1溫度之350°C(圖20以及圖21之製程U1)。 接著’ 一旦疊合晶圓WT2於接合單元21之接合結 束,疊合晶圓WT2係和疊合晶圓wTl同樣地在被载置 於第2熱處理板90之狀態下冷卻至350°C。其次,被载 置於第2熱處理板90而加熱至350°C之疊合晶圓wT3 被上部搬送機構42a所保持。之後,開放閘閥22,疊合 晶圓WT2藉由下部搬送機構42b從接合單元21被搬 出。接著,維持在開放閘閥22之狀態下,被保持於上 部搬送機構42a之疊合晶圓WT3被搬入接合單元21 内,載置於第2熱處理板90上。一旦疊合晶圓wT3被 載置於接合單元21之第2熱處理板90,則使得上部搬 送機構42a退避至熱處理單元2〇,關閉閘閥22。之後, 該®合晶圓WT3藉由抵壓用連接器丨來被抵壓接合(圖 20以及圖21之製程U2)。 於接合單元21進行疊合晶圓Wt3之接合的過程 中,處於載置在第1熱處理板4〇之狀態下的疊合晶圓 WT2係藉由第1熱處理板4〇被冷卻至第3溫度例如15〇 °C(圖20以及圖21之製程T3)。其次,將熱處理單元 20内之壓力開放至大氣壓’使得升降銷53上升,將疊 合晶圓WT2從第i熱處理板4〇轉送至升降銷53,接著, 開放閘閥3 2,使得疊合晶K Wt2從料鎖5 3轉送至晶 圓搬送裝置(未圖示),而將疊合晶圓H從接合裝置 10搬出。之後,接著在開放閘閥32之狀態下將新的疊 30 201236067 ί ίο圓,轉送至升降銷53,其次载置於第1熱處理 處理,於’般,連續進行一連串之疊合晶圓wT之接合 行處理、。個接合裝置1〇對複數疊合晶圓Wt&行地進
處理板9〇上貫施形態,由於在接合單元21之第2熱 100, #之下方設有冷卻第2熱處理板90之冷卻機構 由第2^高效率地調整疊合晶圓"^之溫度。亦即,藉 於,告^理板9G來將疊合日日日圓%加熱至既定溫度之 ;之二"7到快要超過既定加熱速度或是快要超過既定溫 ς :况’可藉由上升冷卻機構1〇〇來接觸於第2熱處 反〇之下面以冷卻第2熱處理板9〇。再者,藉由調 整對冷卻機構100所供給之空氣量,可進一步調整冷卻 機構100所達成之冷卻速度,而可高效率地進行疊合晶 圓wT之溫度調整。 再者,藉由於加壓機構80之抵壓構件81内部内設 加熱器81a’另一方面調整對加壓波紋管83所供給之壓 縮空氣量以及從加壓波紋管83所排出之壓縮空氣量, 可一邊將加壓波紋管83内之壓力維持在所希望之值一 邊調整從加熱器81a散放到加麼波紋管内之虔縮空 氣的熱量’來調整抵壓構件81之溫度,是以可同步化 疊合晶圓WT之上晶圓Wu與下晶圓\vL之溫度。因此, 依據本發明,可防止因上晶圓Wu與下晶圓Wl之溫度 歷程不同造成接合部之強度、物性發生改變。 於以上之實施形態,接合部Ju、Jl係分別使用了鋁 31 201236067 與鍺,但使用其他金屬之情況亦可適用本發明。於相關 情況了,係依據接合部Ju、Jl所使用之金屬種類來決定 接合單元71之處理條件、例如疊合晶圓Wt之加熱溫度 以及抵壓荷重等。再者,於以上之實施形態,雖於晶圓
Wu、WL設置了金屬接合部心、扎,惟基板本身為金屬 之情況亦可適用本發明。再者,即使基板為晶圓以外之 FPD(平板顯不器)、光罩用光標等其他基板之場合亦可 適用本發明。 以上,參見所附圖式說明了本發明之較佳實施形 態,=本發明不限定於相關例。業界人士當然可於申請 專利範圍所記載之思想範疇内思及各種變更例或是修 正例,這些也當然屬於本發明之技術範圍。 本發明在具有金屬接合部之基板彼此進行接合之 際可發揮作用。 【圊式簡單說明】 圖1係顯示具有抵壓用連接器(adaptor)之接合裝置 構成概略之縱截面圖。 圖2係顯示具有抵壓用連接器之接合裝置構成概 略之橫截面圖。 圖3係顯示疊合晶圓之截面圖。 圖4係顯示第丨熱處理板構成概略之縱截面圖。 圖5係顯示搬送機構以及搬送環構成概略之縱截 面圖。 圖6係顯示搬送機構以及搬送環構成概略之立體 32 201236067 圖。 圖7係顯示藉由搬送機構來保持搬送環之模樣之 說明圖。 圖8係顯示接合方法之概略的縱截面圖。 圖9係顯示接合方法之概略的縱截面圖。 圖10係顯示抵壓用連接器之材質以及收縮量與最 大應力差之關係圖。 圖11係顯示晶圓直徑與抵壓用連接器之收縮量與 最大應力差之關係圖。 圖12係顯示其他抵壓用連接器之側視圖。 圖13係顯示其他抵壓用連接器之侧視圖。 圖14係顯示其他抵壓用連接器之側視圖。 圖15係顯示其他抵壓用連接器之側視圖。 圖16係顯示其他抵壓用連接器之側視圖。 圖17係顯示冷卻機構附近構成概略之縱截面圖。 圖18係顯示卡合構件附近構成概略之縱截面圖。 圖19係顯示卡合構件處於撓曲狀態之說明圖。 圖20係顯示晶圓接合處理之主要製程之流程圖。 圖21係顯示接合裝置之各機器動作狀態之時間 圖。 圖22係顯示以往之接合方法概略之縱截面圖。 【主要元件符號說明】 1 抵壓用連接器 10 接合裝置 33 201236067 20 熱處理單元 21 接合單元 22 閘閥 30 處理容器 35 真空泵 40 第1熱處理板 41 上部加熱機構 42 搬送機構 43 加熱器 44 冷媒流路 45 冷媒供給管 46 冷媒排出管 47 空氣源 48 冷卻水源 49 混合器 50 熱交換器 51 循環配管 52 冷凍機 53 升降銷 54 貫通孔 55 保持部 60 搬送環 61 保持構件 62 突出部 34 201236067 處理容器 容器本體 頂板 屏蔽波紋管 ❹ 搬出入口 吸氣口 真空泵 吸氣管 底部開口 加壓機構 抵壓構件 加熱器 支撐構件 加壓波紋管 空氣供給管 空氣排出管 冷卻概套 上部連接器 下部連接器 收縮部 中間部 圓盤部 弟2熱處理板 支撐台 35 201236067 100 冷卻機構 101 溝槽部 102 密封材 103 卡合構件 104 上部卡合構件 105 下部卡合構件 106 連結部 110 冷卻板 111 連通管 112 冷卻水流通板 120 接觸部 121 散熱部 122 外周部 123 貫通孔 124 突出部 130 冷卻水路 131 冷卻水管 200 控制部 Ju、 接合部 Wu 上晶圓 wL 下晶圓 WT 疊合晶圓 36

Claims (1)

  1. 201236067 七、申請專利範圍: 1. 一種接合裝置,係將具有金屬接合部之基板彼此加 以接合者;其特徵在於係具有: 處理容器’其下面形成有開口; 熱處理板,係配置於該處理容器内,用以載置 該基板進行熱處理; 加壓機構,係於該處理容器内對向於該熱處理 板而設置,將該基板朝該熱處理板侧進行抵壓; 環狀支樓台,係於該處理容器之内面沿著該處 理容器之開口而設置,將該處理容器與該熱處理板 之間加以氣密阻塞’並支撐該熱處理板;以及 冷卻機構,係設置於該熱處理板之下方且為該 支撐台之内侧,用以冷卻該熱處理板; 其中該冷卻機構係具備有:冷卻板’其上面和 該熱處理板呈平行設置,内部呈現中空;連通管, 係連通於該冷卻板内部來對該冷卻板内部供給空 氣;以及,升降機構,係使得該冷卻板上下動作; 於該冷卻板之下面形成有和該冷卻板内部相 連通之複數貫通孔,從該連通管對該冷卻板内部所 供給之空氣係從該冷卻板之貫通孔被排出。 2.如申請專利範圍第1項之接合裝置,其中該冷卻機 構係進一步具有冷卻水流通板,係於該冷卻板之下 方以將該處理容器之開口全部加以阻塞之方式所 設置’其内部形成有流通冷卻水之冷卻水路; 37 201236067 於該冷卻水流通板形成有將該冷卻水流通板 朝鉛直方向加以貫通之複數貫通孔; 自該冷卻板之貫通孔所排出之空氣係通過該 冷卻水流通板之貫通孔而從該冷卻水流通板之上 面朝下面排出。 3. 如申請專利範圍第1或2項之接合裝置,其中該加壓 機構係具有:彈性構件,係氣密地連接於該處理容 器之頂板;抵壓構件,係氣密地連接於該彈性構件 之下端;空氣供給管,係對由該處理容器之頂板、 該彈性構件以及該抵壓構件所圍成之空間供給壓 縮空氣;以及空氣排出管,係將被供給之壓縮空氣 加以排出; 於該空氣排出管係設有將流通於該空氣排出 管内部之壓縮空氣加以冷卻之冷卻襯套。 38
TW100137455A 2010-10-18 2011-10-17 Jointing device TWI490933B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010233878A JP5091296B2 (ja) 2010-10-18 2010-10-18 接合装置

Publications (2)

Publication Number Publication Date
TW201236067A true TW201236067A (en) 2012-09-01
TWI490933B TWI490933B (zh) 2015-07-01

Family

ID=45933256

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100137455A TWI490933B (zh) 2010-10-18 2011-10-17 Jointing device

Country Status (5)

Country Link
US (1) US8210417B2 (zh)
JP (1) JP5091296B2 (zh)
KR (1) KR101299845B1 (zh)
CN (1) CN102456589B (zh)
TW (1) TWI490933B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI799409B (zh) * 2017-04-19 2023-04-21 南韓商美科陶瓷科技有限公司 改善了耐久性的陶瓷加熱器及其陶瓷板

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5424201B2 (ja) 2009-08-27 2014-02-26 アユミ工業株式会社 加熱溶融処理装置および加熱溶融処理方法
JP5134673B2 (ja) * 2010-10-29 2013-01-30 東京エレクトロン株式会社 貼り合わせ装置及び貼り合わせ方法
US8870051B2 (en) * 2012-05-03 2014-10-28 International Business Machines Corporation Flip chip assembly apparatus employing a warpage-suppressor assembly
US10199350B2 (en) * 2012-05-25 2019-02-05 Asm Technology Singapore Pte Ltd Apparatus for heating a substrate during die bonding
JP5521066B1 (ja) * 2013-01-25 2014-06-11 東京エレクトロン株式会社 接合装置及び接合システム
US9282650B2 (en) * 2013-12-18 2016-03-08 Intel Corporation Thermal compression bonding process cooling manifold
CA2893299C (en) 2014-06-02 2017-11-14 Rolls-Royce Corporation Fixture for high temperature joining
US10192847B2 (en) * 2014-06-12 2019-01-29 Asm Technology Singapore Pte Ltd Rapid cooling system for a bond head heater
KR20160048301A (ko) * 2014-10-23 2016-05-04 삼성전자주식회사 본딩 장치 및 그를 포함하는 기판 제조 설비
JP6345606B2 (ja) * 2015-01-16 2018-06-20 東京エレクトロン株式会社 接合システムおよび接合方法
EP3086361A3 (de) * 2015-04-02 2017-01-25 Heraeus Deutschland GmbH & Co. KG Verfahren zum herstellen einer substratanordnung mit einem vorfixiermittel, entsprechende substratanordnung, verfahren zum verbinden eines elektronikbauteils mit einer substratanordnung mit anwendung eines auf dem elektronikbauteil und/oder der substratanordnung aufgebrachten vorfixiermittels und mit einer substratanordnung verbundenes elektronikbauteil
DE102015106298B4 (de) * 2015-04-24 2017-01-26 Semikron Elektronik Gmbh & Co. Kg Vorrichtung, Verfahren und Anlage zur inhomogenen Abkühlung eines flächigen Gegenstandes
KR102429619B1 (ko) * 2015-11-18 2022-08-04 삼성전자주식회사 본딩 스테이지와 이를 포함하는 본딩 장치
DE102015120156B4 (de) * 2015-11-20 2019-07-04 Semikron Elektronik Gmbh & Co. Kg Vorrichtung zur materialschlüssigen Verbindung von Verbindungspartnern eines Leistungselekronik-Bauteils und Verwendung einer solchen Vorrichtung
CN105499798B (zh) * 2015-12-29 2018-01-12 苏州润昇精密机械有限公司 风冷式激光焊接冷却流水线结构
JP6342566B1 (ja) * 2017-11-16 2018-06-13 アルファーデザイン株式会社 部品保持装置及び部品接合システム
US11205633B2 (en) * 2019-01-09 2021-12-21 Kulicke And Soffa Industries, Inc. Methods of bonding of semiconductor elements to substrates, and related bonding systems
JP7386045B2 (ja) * 2019-10-31 2023-11-24 株式会社ジェイテクトサーモシステム 熱処理装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4320865A (en) * 1980-03-21 1982-03-23 National Semiconductor Corporation Apparatus for attachment of die to heat sink
JPH03163838A (ja) * 1989-11-22 1991-07-15 Omron Corp ダイボンディング装置
JP2933403B2 (ja) * 1991-03-15 1999-08-16 株式会社日立製作所 半導体パッケージ気密封止方法及び半導体パッケージ気密封止装置
JP2899130B2 (ja) * 1991-05-09 1999-06-02 日立テクノエンジニアリング株式会社 高真空ホットプレス
JPH06143220A (ja) * 1992-11-09 1994-05-24 Hitachi Techno Eng Co Ltd ホットプレス
US5511799A (en) * 1993-06-07 1996-04-30 Applied Materials, Inc. Sealing device useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential
US5988487A (en) * 1997-05-27 1999-11-23 Fujitsu Limited Captured-cell solder printing and reflow methods
TW412816B (en) * 1998-06-19 2000-11-21 Matsushita Electric Ind Co Ltd Bump-forming apparatus and bump-forming method
JP2001170767A (ja) * 1999-12-10 2001-06-26 Hitachi Ltd はんだ付け装置
JP3397313B2 (ja) * 1999-12-20 2003-04-14 富士通株式会社 半導体装置の製造方法及び電子部品の実装方法
JP4456234B2 (ja) * 2000-07-04 2010-04-28 パナソニック株式会社 バンプ形成方法
JP3937129B2 (ja) * 2001-04-06 2007-06-27 ソニー株式会社 熱プレス装置及びカード製造装置
JP2003121023A (ja) * 2001-10-10 2003-04-23 Tokyo Electron Ltd 熱媒体循環装置及びこれを用いた熱処理装置
JP2004207436A (ja) * 2002-12-25 2004-07-22 Ayumi Kogyo Kk ウエハのプリアライメント方法とその装置ならびにウエハの貼り合わせ方法とその装置
CN1578600B (zh) * 2003-07-17 2010-12-15 松下电器产业株式会社 部件接合装置及方法与部件安装装置
JP4549648B2 (ja) * 2003-09-30 2010-09-22 信越半導体株式会社 半導体貼り合わせ装置
WO2005117140A1 (ja) * 2004-05-28 2005-12-08 Mech Corporation 太陽電池セル製造装置
US20090137771A1 (en) * 2005-08-11 2009-05-28 Satoshi Moriyama Resin composition
JP4720469B2 (ja) 2005-12-08 2011-07-13 株式会社ニコン 貼り合わせ半導体装置製造用の露光方法
KR100968039B1 (ko) * 2005-12-12 2010-07-07 가부시키가이샤 무라타 세이사쿠쇼 위치맞춤장치, 접합장치 및 위치맞춤방법
DE102006029593A1 (de) * 2006-05-29 2007-12-13 Pink Gmbh Vakuumtechnik Verfahren und Vorrichtung zur Herstellung einer Lotverbindung
JP2008288384A (ja) * 2007-05-17 2008-11-27 Sony Corp 3次元積層デバイスとその製造方法、及び3次元積層デバイスの接合方法
JP2009049051A (ja) 2007-08-14 2009-03-05 Elpida Memory Inc 半導体基板の接合方法及びそれにより製造された積層体
US20110214809A1 (en) * 2008-11-14 2011-09-08 Tokyo Electron Limited Bonding apparatus and bonding method
JP5586314B2 (ja) * 2010-04-23 2014-09-10 芝浦メカトロニクス株式会社 半導体装置の製造装置及び半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI799409B (zh) * 2017-04-19 2023-04-21 南韓商美科陶瓷科技有限公司 改善了耐久性的陶瓷加熱器及其陶瓷板

Also Published As

Publication number Publication date
CN102456589B (zh) 2014-07-16
US20120091186A1 (en) 2012-04-19
KR20120040115A (ko) 2012-04-26
JP2012089625A (ja) 2012-05-10
CN102456589A (zh) 2012-05-16
JP5091296B2 (ja) 2012-12-05
TWI490933B (zh) 2015-07-01
KR101299845B1 (ko) 2013-08-23
US8210417B2 (en) 2012-07-03

Similar Documents

Publication Publication Date Title
TW201236067A (en) Joining apparatus
JP5129848B2 (ja) 接合装置及び接合方法
TW200926348A (en) Placing stand structure and treatment apparatus
JP2019031434A (ja) 過渡液相、窒化アルミニウム製部品の常圧接合
TW518640B (en) Dual substrate loadlock process equipment
US8461490B2 (en) Substrate heating unit and substrate treating apparatus including the same
TW200809930A (en) Techniques for temperature-controlled ion implantation
JP2015514661A5 (zh)
JP6820451B1 (ja) セラミックペデスタルで使用するための二重目的のビア
JP2017183329A (ja) ウエハ載置装置
TW201203434A (en) Substrate processing device, substrate processing method, and storage medium
TW201220418A (en) Substrate joining system and substrate joining method and computer storage medium
JP2011151127A (ja) 接合装置、接合方法、プログラム及びコンピュータ記憶媒体
TWI760499B (zh) 焊接頭及具有其的焊接裝置
TW202015169A (zh) 用於寬範圍溫度控制的加熱器基座組件
JP5299837B2 (ja) 支持装置、加熱加圧装置及び加熱加圧方法
JP2020122206A (ja) 基板処理装置の制御方法及び基板処理装置
TW583725B (en) Substrate processing apparatus and method for manufacturing semiconductor device
JP2011222632A (ja) 基板貼り合せ装置、積層半導体装置製造方法及び積層半導体装置
CN105441876B (zh) 一种薄膜沉积设备
JP5552826B2 (ja) 基板貼り合せ装置、積層半導体装置製造方法及び積層半導体装置
JP2001345313A (ja) 基板処理装置
JP5323730B2 (ja) 接合装置、接合方法、プログラム及びコンピュータ記憶媒体
JP2011054745A (ja) 温度調整装置、基板貼り合せ装置および半導体装置の製造方法
JP2012089623A (ja) 押圧用アダプタ

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees