TW201230346A - Semiconductor capacitor with large area plates and a small footprint that is formed with shadow masks and only two lithography steps - Google Patents
Semiconductor capacitor with large area plates and a small footprint that is formed with shadow masks and only two lithography steps Download PDFInfo
- Publication number
- TW201230346A TW201230346A TW100135190A TW100135190A TW201230346A TW 201230346 A TW201230346 A TW 201230346A TW 100135190 A TW100135190 A TW 100135190A TW 100135190 A TW100135190 A TW 100135190A TW 201230346 A TW201230346 A TW 201230346A
- Authority
- TW
- Taiwan
- Prior art keywords
- conductor layer
- conductor
- opening
- metal
- capacitor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 90
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000001459 lithography Methods 0.000 title description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 157
- 239000002184 metal Substances 0.000 claims abstract description 157
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 239000000615 nonconductor Substances 0.000 claims description 79
- 239000004020 conductor Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 154
- 235000012431 wafers Nutrition 0.000 description 65
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010062717 Increased upper airway secretion Diseases 0.000 description 1
- BAVYZALUXZFZLV-UHFFFAOYSA-O Methylammonium ion Chemical compound [NH3+]C BAVYZALUXZFZLV-UHFFFAOYSA-O 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 235000020057 cognac Nutrition 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000000423 heterosexual effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 208000026435 phlegm Diseases 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- HLZKNKRTKFSKGZ-UHFFFAOYSA-N tetradecan-1-ol Chemical compound CCCCCCCCCCCCCCO HLZKNKRTKFSKGZ-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/01—Manufacture or treatment
- H10D1/041—Manufacture or treatment of capacitors having no potential barriers
- H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/917,843 US8722505B2 (en) | 2010-11-02 | 2010-11-02 | Semiconductor capacitor with large area plates and a small footprint that is formed with shadow masks and only two lithography steps |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201230346A true TW201230346A (en) | 2012-07-16 |
Family
ID=45995752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100135190A TW201230346A (en) | 2010-11-02 | 2011-09-29 | Semiconductor capacitor with large area plates and a small footprint that is formed with shadow masks and only two lithography steps |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8722505B2 (enExample) |
| JP (1) | JP2014503988A (enExample) |
| CN (1) | CN103189982A (enExample) |
| TW (1) | TW201230346A (enExample) |
| WO (1) | WO2012060927A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100817174B1 (ko) * | 2005-06-21 | 2008-03-27 | 세향산업 주식회사 | 다층박막 캐패시터와 그 제조방법 및 장치 |
| US8502340B2 (en) | 2010-12-09 | 2013-08-06 | Tessera, Inc. | High density three-dimensional integrated capacitors |
| DE102013200354A1 (de) * | 2013-01-14 | 2014-07-17 | Robert Bosch Gmbh | Verfahren und Vorrichtung zum Herstellen eines Multilagenelektrodensystems |
| FR3002685B1 (fr) * | 2013-02-28 | 2016-06-24 | Commissariat Energie Atomique | Procede de realisation d'un dispositif microelectronique |
| US9269610B2 (en) * | 2014-04-15 | 2016-02-23 | Qualcomm Incorporated | Pattern between pattern for low profile substrate |
| CN105071545A (zh) * | 2015-08-05 | 2015-11-18 | 国润金华（北京）国际能源投资有限公司 | 一种量子物理蓄电池及其制备方法 |
| US10868107B2 (en) | 2017-06-20 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Trench capacitor and method of forming the same |
| WO2019164588A2 (en) | 2018-01-05 | 2019-08-29 | University Of Maryland, College Park | Multi-layer solid-state devices and methods for forming the same |
| GB201815842D0 (en) * | 2018-09-28 | 2018-11-14 | Power Roll Ltd | Method of processing substrate for an energy storage device |
| GB201917734D0 (en) * | 2019-12-04 | 2020-01-15 | Spts Technologies Ltd | Method, substrate and apparatus |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55127011A (en) * | 1979-03-26 | 1980-10-01 | Tdk Electronics Co Ltd | Capacitor and method of manufacturing same |
| US4827323A (en) | 1986-01-07 | 1989-05-02 | Texas Instruments Incorporated | Stacked capacitor |
| JP3088179B2 (ja) * | 1992-03-17 | 2000-09-18 | 松下電器産業株式会社 | 積層薄膜コンデンサの製造方法 |
| JP3720846B2 (ja) * | 1995-03-27 | 2005-11-30 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 複数の電子多層構成部品の製造方法 |
| US6565730B2 (en) | 1999-12-29 | 2003-05-20 | Intel Corporation | Self-aligned coaxial via capacitors |
| US6437385B1 (en) | 2000-06-29 | 2002-08-20 | International Business Machines Corporation | Integrated circuit capacitor |
| JP2002299462A (ja) * | 2001-01-26 | 2002-10-11 | Nokia Mobile Phones Ltd | 半導体装置 |
| US8288240B2 (en) * | 2009-02-13 | 2012-10-16 | International Business Machines Corporation | Method of making an MIM capacitor and MIM capacitor structure formed thereby |
-
2010
- 2010-11-02 US US12/917,843 patent/US8722505B2/en active Active
-
2011
- 2011-08-31 WO PCT/US2011/049927 patent/WO2012060927A1/en not_active Ceased
- 2011-08-31 JP JP2013537667A patent/JP2014503988A/ja active Pending
- 2011-08-31 CN CN2011800527902A patent/CN103189982A/zh active Pending
- 2011-09-29 TW TW100135190A patent/TW201230346A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012060927A1 (en) | 2012-05-10 |
| US8722505B2 (en) | 2014-05-13 |
| US20120104548A1 (en) | 2012-05-03 |
| CN103189982A (zh) | 2013-07-03 |
| JP2014503988A (ja) | 2014-02-13 |
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