TW201230346A - Semiconductor capacitor with large area plates and a small footprint that is formed with shadow masks and only two lithography steps - Google Patents

Semiconductor capacitor with large area plates and a small footprint that is formed with shadow masks and only two lithography steps Download PDF

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Publication number
TW201230346A
TW201230346A TW100135190A TW100135190A TW201230346A TW 201230346 A TW201230346 A TW 201230346A TW 100135190 A TW100135190 A TW 100135190A TW 100135190 A TW100135190 A TW 100135190A TW 201230346 A TW201230346 A TW 201230346A
Authority
TW
Taiwan
Prior art keywords
conductor layer
conductor
opening
metal
capacitor
Prior art date
Application number
TW100135190A
Other languages
English (en)
Chinese (zh)
Inventor
Peter J Hopper
William French
Original Assignee
Nat Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Semiconductor Corp filed Critical Nat Semiconductor Corp
Publication of TW201230346A publication Critical patent/TW201230346A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
TW100135190A 2010-11-02 2011-09-29 Semiconductor capacitor with large area plates and a small footprint that is formed with shadow masks and only two lithography steps TW201230346A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/917,843 US8722505B2 (en) 2010-11-02 2010-11-02 Semiconductor capacitor with large area plates and a small footprint that is formed with shadow masks and only two lithography steps

Publications (1)

Publication Number Publication Date
TW201230346A true TW201230346A (en) 2012-07-16

Family

ID=45995752

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100135190A TW201230346A (en) 2010-11-02 2011-09-29 Semiconductor capacitor with large area plates and a small footprint that is formed with shadow masks and only two lithography steps

Country Status (5)

Country Link
US (1) US8722505B2 (enExample)
JP (1) JP2014503988A (enExample)
CN (1) CN103189982A (enExample)
TW (1) TW201230346A (enExample)
WO (1) WO2012060927A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100817174B1 (ko) * 2005-06-21 2008-03-27 세향산업 주식회사 다층박막 캐패시터와 그 제조방법 및 장치
US8502340B2 (en) 2010-12-09 2013-08-06 Tessera, Inc. High density three-dimensional integrated capacitors
DE102013200354A1 (de) 2013-01-14 2014-07-17 Robert Bosch Gmbh Verfahren und Vorrichtung zum Herstellen eines Multilagenelektrodensystems
FR3002685B1 (fr) * 2013-02-28 2016-06-24 Commissariat Energie Atomique Procede de realisation d'un dispositif microelectronique
US9269610B2 (en) * 2014-04-15 2016-02-23 Qualcomm Incorporated Pattern between pattern for low profile substrate
CN105071545A (zh) * 2015-08-05 2015-11-18 国润金华（北京）国际能源投资有限公司 一种量子物理蓄电池及其制备方法
US10868107B2 (en) 2017-06-20 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Trench capacitor and method of forming the same
US12094721B2 (en) 2018-01-05 2024-09-17 University Of Maryland, College Park Multi-layer solid-state devices and methods for forming the same
GB201815842D0 (en) * 2018-09-28 2018-11-14 Power Roll Ltd Method of processing substrate for an energy storage device
GB201917734D0 (en) * 2019-12-04 2020-01-15 Spts Technologies Ltd Method, substrate and apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55127011A (en) * 1979-03-26 1980-10-01 Tdk Electronics Co Ltd Capacitor and method of manufacturing same
US4827323A (en) 1986-01-07 1989-05-02 Texas Instruments Incorporated Stacked capacitor
JP3088179B2 (ja) * 1992-03-17 2000-09-18 松下電器産業株式会社 積層薄膜コンデンサの製造方法
DE69615628T2 (de) * 1995-03-27 2002-08-01 Koninklijke Philips Electronics N.V., Eindhoven Elektronisches Mehrschichtbauteil und Verfahren zu seiner Herstellung
US6565730B2 (en) * 1999-12-29 2003-05-20 Intel Corporation Self-aligned coaxial via capacitors
US6437385B1 (en) 2000-06-29 2002-08-20 International Business Machines Corporation Integrated circuit capacitor
JP2002299462A (ja) 2001-01-26 2002-10-11 Nokia Mobile Phones Ltd 半導体装置
US8288240B2 (en) * 2009-02-13 2012-10-16 International Business Machines Corporation Method of making an MIM capacitor and MIM capacitor structure formed thereby

Also Published As

Publication number Publication date
US8722505B2 (en) 2014-05-13
US20120104548A1 (en) 2012-05-03
WO2012060927A1 (en) 2012-05-10
CN103189982A (zh) 2013-07-03
JP2014503988A (ja) 2014-02-13

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