JP2014503988A - 半導体キャパシタ - Google Patents

半導体キャパシタ Download PDF

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Publication number
JP2014503988A
JP2014503988A JP2013537667A JP2013537667A JP2014503988A JP 2014503988 A JP2014503988 A JP 2014503988A JP 2013537667 A JP2013537667 A JP 2013537667A JP 2013537667 A JP2013537667 A JP 2013537667A JP 2014503988 A JP2014503988 A JP 2014503988A
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JP
Japan
Prior art keywords
metal
conductive layer
opening
conductive
contact
Prior art date
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Pending
Application number
JP2013537667A
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English (en)
Japanese (ja)
Other versions
JP2014503988A5 (enExample
Inventor
ジェイ ホッパー ピーター
フレンチ ウィリアム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
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National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of JP2014503988A publication Critical patent/JP2014503988A/ja
Publication of JP2014503988A5 publication Critical patent/JP2014503988A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
JP2013537667A 2010-11-02 2011-08-31 半導体キャパシタ Pending JP2014503988A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/917,843 US8722505B2 (en) 2010-11-02 2010-11-02 Semiconductor capacitor with large area plates and a small footprint that is formed with shadow masks and only two lithography steps
US12/917,843 2010-11-02
PCT/US2011/049927 WO2012060927A1 (en) 2010-11-02 2011-08-31 Semiconductor capacitor

Publications (2)

Publication Number Publication Date
JP2014503988A true JP2014503988A (ja) 2014-02-13
JP2014503988A5 JP2014503988A5 (enExample) 2014-09-18

Family

ID=45995752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013537667A Pending JP2014503988A (ja) 2010-11-02 2011-08-31 半導体キャパシタ

Country Status (5)

Country Link
US (1) US8722505B2 (enExample)
JP (1) JP2014503988A (enExample)
CN (1) CN103189982A (enExample)
TW (1) TW201230346A (enExample)
WO (1) WO2012060927A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022502853A (ja) * 2018-09-28 2022-01-11 パワー ロール リミテッド エネルギー貯蔵装置用の基板を処理する方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100817174B1 (ko) * 2005-06-21 2008-03-27 세향산업 주식회사 다층박막 캐패시터와 그 제조방법 및 장치
US8502340B2 (en) 2010-12-09 2013-08-06 Tessera, Inc. High density three-dimensional integrated capacitors
DE102013200354A1 (de) * 2013-01-14 2014-07-17 Robert Bosch Gmbh Verfahren und Vorrichtung zum Herstellen eines Multilagenelektrodensystems
FR3002685B1 (fr) * 2013-02-28 2016-06-24 Commissariat Energie Atomique Procede de realisation d'un dispositif microelectronique
US9269610B2 (en) * 2014-04-15 2016-02-23 Qualcomm Incorporated Pattern between pattern for low profile substrate
CN105071545A (zh) * 2015-08-05 2015-11-18 国润金华（北京）国际能源投资有限公司 一种量子物理蓄电池及其制备方法
US10868107B2 (en) 2017-06-20 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Trench capacitor and method of forming the same
WO2019164588A2 (en) 2018-01-05 2019-08-29 University Of Maryland, College Park Multi-layer solid-state devices and methods for forming the same
GB201917734D0 (en) * 2019-12-04 2020-01-15 Spts Technologies Ltd Method, substrate and apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55127011A (en) * 1979-03-26 1980-10-01 Tdk Electronics Co Ltd Capacitor and method of manufacturing same
US4827323A (en) * 1986-01-07 1989-05-02 Texas Instruments Incorporated Stacked capacitor
JPH05267091A (ja) * 1992-03-17 1993-10-15 Matsushita Electric Ind Co Ltd 積層薄膜コンデンサの製造方法
JPH10501658A (ja) * 1995-03-27 1998-02-10 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 複数の電子多層構成部品の製造方法
US20100207246A1 (en) * 2009-02-13 2010-08-19 International Business Machines Corporation Method of making an mim capacitor and mim capacitor structure formed thereby

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6565730B2 (en) 1999-12-29 2003-05-20 Intel Corporation Self-aligned coaxial via capacitors
US6437385B1 (en) 2000-06-29 2002-08-20 International Business Machines Corporation Integrated circuit capacitor
JP2002299462A (ja) * 2001-01-26 2002-10-11 Nokia Mobile Phones Ltd 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55127011A (en) * 1979-03-26 1980-10-01 Tdk Electronics Co Ltd Capacitor and method of manufacturing same
US4827323A (en) * 1986-01-07 1989-05-02 Texas Instruments Incorporated Stacked capacitor
JPH05267091A (ja) * 1992-03-17 1993-10-15 Matsushita Electric Ind Co Ltd 積層薄膜コンデンサの製造方法
JPH10501658A (ja) * 1995-03-27 1998-02-10 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 複数の電子多層構成部品の製造方法
US20100207246A1 (en) * 2009-02-13 2010-08-19 International Business Machines Corporation Method of making an mim capacitor and mim capacitor structure formed thereby

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022502853A (ja) * 2018-09-28 2022-01-11 パワー ロール リミテッド エネルギー貯蔵装置用の基板を処理する方法

Also Published As

Publication number Publication date
WO2012060927A1 (en) 2012-05-10
TW201230346A (en) 2012-07-16
US8722505B2 (en) 2014-05-13
US20120104548A1 (en) 2012-05-03
CN103189982A (zh) 2013-07-03

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