JP2014503988A5 - - Google Patents
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- Publication number
- JP2014503988A5 JP2014503988A5 JP2013537667A JP2013537667A JP2014503988A5 JP 2014503988 A5 JP2014503988 A5 JP 2014503988A5 JP 2013537667 A JP2013537667 A JP 2013537667A JP 2013537667 A JP2013537667 A JP 2013537667A JP 2014503988 A5 JP2014503988 A5 JP 2014503988A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- forming
- metal
- opening
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims 36
- 238000000034 method Methods 0.000 claims 29
- 239000003990 capacitor Substances 0.000 claims 27
- 239000004065 semiconductor Substances 0.000 claims 7
- 238000000151 deposition Methods 0.000 claims 4
- 238000007740 vapor deposition Methods 0.000 claims 3
- 239000000463 material Substances 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/917,843 US8722505B2 (en) | 2010-11-02 | 2010-11-02 | Semiconductor capacitor with large area plates and a small footprint that is formed with shadow masks and only two lithography steps |
| US12/917,843 | 2010-11-02 | ||
| PCT/US2011/049927 WO2012060927A1 (en) | 2010-11-02 | 2011-08-31 | Semiconductor capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014503988A JP2014503988A (ja) | 2014-02-13 |
| JP2014503988A5 true JP2014503988A5 (enExample) | 2014-09-18 |
Family
ID=45995752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013537667A Pending JP2014503988A (ja) | 2010-11-02 | 2011-08-31 | 半導体キャパシタ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8722505B2 (enExample) |
| JP (1) | JP2014503988A (enExample) |
| CN (1) | CN103189982A (enExample) |
| TW (1) | TW201230346A (enExample) |
| WO (1) | WO2012060927A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100817174B1 (ko) * | 2005-06-21 | 2008-03-27 | 세향산업 주식회사 | 다층박막 캐패시터와 그 제조방법 및 장치 |
| US8502340B2 (en) | 2010-12-09 | 2013-08-06 | Tessera, Inc. | High density three-dimensional integrated capacitors |
| DE102013200354A1 (de) * | 2013-01-14 | 2014-07-17 | Robert Bosch Gmbh | Verfahren und Vorrichtung zum Herstellen eines Multilagenelektrodensystems |
| FR3002685B1 (fr) * | 2013-02-28 | 2016-06-24 | Commissariat Energie Atomique | Procede de realisation d'un dispositif microelectronique |
| US9269610B2 (en) * | 2014-04-15 | 2016-02-23 | Qualcomm Incorporated | Pattern between pattern for low profile substrate |
| CN105071545A (zh) * | 2015-08-05 | 2015-11-18 | 国润金华（北京）国际能源投资有限公司 | 一种量子物理蓄电池及其制备方法 |
| US10868107B2 (en) | 2017-06-20 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Trench capacitor and method of forming the same |
| WO2019164588A2 (en) | 2018-01-05 | 2019-08-29 | University Of Maryland, College Park | Multi-layer solid-state devices and methods for forming the same |
| GB201815842D0 (en) * | 2018-09-28 | 2018-11-14 | Power Roll Ltd | Method of processing substrate for an energy storage device |
| GB201917734D0 (en) * | 2019-12-04 | 2020-01-15 | Spts Technologies Ltd | Method, substrate and apparatus |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55127011A (en) * | 1979-03-26 | 1980-10-01 | Tdk Electronics Co Ltd | Capacitor and method of manufacturing same |
| US4827323A (en) | 1986-01-07 | 1989-05-02 | Texas Instruments Incorporated | Stacked capacitor |
| JP3088179B2 (ja) * | 1992-03-17 | 2000-09-18 | 松下電器産業株式会社 | 積層薄膜コンデンサの製造方法 |
| JP3720846B2 (ja) * | 1995-03-27 | 2005-11-30 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 複数の電子多層構成部品の製造方法 |
| US6565730B2 (en) | 1999-12-29 | 2003-05-20 | Intel Corporation | Self-aligned coaxial via capacitors |
| US6437385B1 (en) | 2000-06-29 | 2002-08-20 | International Business Machines Corporation | Integrated circuit capacitor |
| JP2002299462A (ja) * | 2001-01-26 | 2002-10-11 | Nokia Mobile Phones Ltd | 半導体装置 |
| US8288240B2 (en) * | 2009-02-13 | 2012-10-16 | International Business Machines Corporation | Method of making an MIM capacitor and MIM capacitor structure formed thereby |
-
2010
- 2010-11-02 US US12/917,843 patent/US8722505B2/en active Active
-
2011
- 2011-08-31 WO PCT/US2011/049927 patent/WO2012060927A1/en not_active Ceased
- 2011-08-31 JP JP2013537667A patent/JP2014503988A/ja active Pending
- 2011-08-31 CN CN2011800527902A patent/CN103189982A/zh active Pending
- 2011-09-29 TW TW100135190A patent/TW201230346A/zh unknown