CN103189982A - 半导体电容器 - Google Patents

半导体电容器 Download PDF

Info

Publication number
CN103189982A
CN103189982A CN2011800527902A CN201180052790A CN103189982A CN 103189982 A CN103189982 A CN 103189982A CN 2011800527902 A CN2011800527902 A CN 2011800527902A CN 201180052790 A CN201180052790 A CN 201180052790A CN 103189982 A CN103189982 A CN 103189982A
Authority
CN
China
Prior art keywords
insulating barrier
metal
opening
metal structure
conductive structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800527902A
Other languages
English (en)
Chinese (zh)
Inventor
P·J·霍波
W·弗兰茨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of CN103189982A publication Critical patent/CN103189982A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
CN2011800527902A 2010-11-02 2011-08-31 半导体电容器 Pending CN103189982A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/917,843 US8722505B2 (en) 2010-11-02 2010-11-02 Semiconductor capacitor with large area plates and a small footprint that is formed with shadow masks and only two lithography steps
US12/917,843 2010-11-02
PCT/US2011/049927 WO2012060927A1 (en) 2010-11-02 2011-08-31 Semiconductor capacitor

Publications (1)

Publication Number Publication Date
CN103189982A true CN103189982A (zh) 2013-07-03

Family

ID=45995752

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800527902A Pending CN103189982A (zh) 2010-11-02 2011-08-31 半导体电容器

Country Status (5)

Country Link
US (1) US8722505B2 (enExample)
JP (1) JP2014503988A (enExample)
CN (1) CN103189982A (enExample)
TW (1) TW201230346A (enExample)
WO (1) WO2012060927A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105071545A (zh) * 2015-08-05 2015-11-18 国润金华（北京）国际能源投资有限公司 一种量子物理蓄电池及其制备方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100817174B1 (ko) * 2005-06-21 2008-03-27 세향산업 주식회사 다층박막 캐패시터와 그 제조방법 및 장치
US8502340B2 (en) 2010-12-09 2013-08-06 Tessera, Inc. High density three-dimensional integrated capacitors
DE102013200354A1 (de) * 2013-01-14 2014-07-17 Robert Bosch Gmbh Verfahren und Vorrichtung zum Herstellen eines Multilagenelektrodensystems
FR3002685B1 (fr) * 2013-02-28 2016-06-24 Commissariat Energie Atomique Procede de realisation d'un dispositif microelectronique
US9269610B2 (en) * 2014-04-15 2016-02-23 Qualcomm Incorporated Pattern between pattern for low profile substrate
US10868107B2 (en) 2017-06-20 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Trench capacitor and method of forming the same
WO2019164588A2 (en) 2018-01-05 2019-08-29 University Of Maryland, College Park Multi-layer solid-state devices and methods for forming the same
GB201815842D0 (en) * 2018-09-28 2018-11-14 Power Roll Ltd Method of processing substrate for an energy storage device
GB201917734D0 (en) * 2019-12-04 2020-01-15 Spts Technologies Ltd Method, substrate and apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4827323A (en) * 1986-01-07 1989-05-02 Texas Instruments Incorporated Stacked capacitor
US20020109175A1 (en) * 2001-01-26 2002-08-15 Takashi Iwamoto Semiconductor device
CN1437838A (zh) * 1999-12-29 2003-08-20 英特尔公司 自对准同轴通路电容器
US20100207246A1 (en) * 2009-02-13 2010-08-19 International Business Machines Corporation Method of making an mim capacitor and mim capacitor structure formed thereby

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55127011A (en) * 1979-03-26 1980-10-01 Tdk Electronics Co Ltd Capacitor and method of manufacturing same
JP3088179B2 (ja) * 1992-03-17 2000-09-18 松下電器産業株式会社 積層薄膜コンデンサの製造方法
JP3720846B2 (ja) * 1995-03-27 2005-11-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 複数の電子多層構成部品の製造方法
US6437385B1 (en) 2000-06-29 2002-08-20 International Business Machines Corporation Integrated circuit capacitor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4827323A (en) * 1986-01-07 1989-05-02 Texas Instruments Incorporated Stacked capacitor
CN1437838A (zh) * 1999-12-29 2003-08-20 英特尔公司 自对准同轴通路电容器
US20020109175A1 (en) * 2001-01-26 2002-08-15 Takashi Iwamoto Semiconductor device
US20100207246A1 (en) * 2009-02-13 2010-08-19 International Business Machines Corporation Method of making an mim capacitor and mim capacitor structure formed thereby

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105071545A (zh) * 2015-08-05 2015-11-18 国润金华（北京）国际能源投资有限公司 一种量子物理蓄电池及其制备方法

Also Published As

Publication number Publication date
WO2012060927A1 (en) 2012-05-10
TW201230346A (en) 2012-07-16
US8722505B2 (en) 2014-05-13
US20120104548A1 (en) 2012-05-03
JP2014503988A (ja) 2014-02-13

Similar Documents

Publication Publication Date Title
CN103189982A (zh) 半导体电容器
CN105514092B (zh) 金属‑绝缘体‑金属电容及其形成方法
JP2016105465A (ja) 垂直ｎａｎｄホールエッチングのためのめっき金属ハードマスク
TW200304183A (en) Electrode for dry etching a semiconductor wafer
TW202006886A (zh) 利用選擇性雙層介電質再生長的完全自對準介層窗
TW202010108A (zh) 半導體結構暨其形成方法
TWI619281B (zh) 製造元件之方法
CN112397541B (zh) 背照式图像传感器的制造方法
KR102412439B1 (ko) 자기 정렬된 다중 패터닝을 위한 선택적 산화물 에칭 방법
CN105990286B (zh) 器件制造及其封装方法
CN101924074A (zh) Cmos传感器及其制造方法
US8377792B2 (en) Method of forming high capacitance semiconductor capacitors with a single lithography step
US20250285967A1 (en) Metal-insulator-metal capacitor and methods of manufacturing
CN114242696B (zh) Mim电容及其制备方法
TW202416506A (zh) 半導體裝置
TW202345375A (zh) 半導體裝置及製造方法
US20170256606A1 (en) Coplanar Metal-Insulator-Metal Capacitive Structure
TWI774311B (zh) 用於半導體元件的鈍化層及其製造方法
US20250300072A1 (en) Resistor within a via
JPH0878397A (ja) 高融点金属含有膜のエッチング方法及び薄膜キャパシタの製造方法
TW201801171A (zh) 微影製程
TWI801819B (zh) 電容性器件及其製造方法
JP2025527775A (ja) 金属ハードマスクを使用して半導体デバイスを形成するための方法
JP2020524917A (ja) 容量性微細構造
CN114093813A (zh) 一种用于半导体器件的接触孔的制作方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130703