TW201226491A - Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films - Google Patents
Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films Download PDFInfo
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- TW201226491A TW201226491A TW100132009A TW100132009A TW201226491A TW 201226491 A TW201226491 A TW 201226491A TW 100132009 A TW100132009 A TW 100132009A TW 100132009 A TW100132009 A TW 100132009A TW 201226491 A TW201226491 A TW 201226491A
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- acid
- oxide
- aqueous
- optical
- abrasive composition
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Classifications
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- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
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- C09G1/18—Other polishing compositions based on non-waxy substances on other substances
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- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- Mechanical Treatment Of Semiconductor (AREA)
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Description
201226491 六、發明說明: 本發明係針對新穎的水性研磨組成物,其尤其適用於 研磨含有氧化石夕介電質及多晶石夕膜(可視情況含有氮化石夕膜) 之半導體基材。 此外’本發明係針對用於研磨用於製造電子、機械及 光學裝置之基材之新穎方法,該基材材料包含氧化矽及多 晶石夕膜’視情況包含氮化矽膜。 引用文獻 本發明所引用之文件以整體引用方式併入。 【本發明之背景】 化學機械平坦化或研磨(CMP)為達成積體電路(ic) 裝置局部及全面平坦度之主要方法。該技術典型地應用含 有磨料及其他添加劑之CMP組成物或漿料作為旋轉之基材 表面與所施加負載下之研磨墊之間的活性化學劑。因此, CMP方法聯合諸如磨耗之物理方法及諸如氧化或螯合之化 學方法。僅包含物理作用或僅包含化學作用對移除或研磨 基材材料而s並非所欲,而為達成快速均勻的移除,兩者 之協同組合較為理想。 以此種方式移除基材材料直至獲得所需平坦度,或直 至障壁子層(barrier sublayer)或停止層(st〇ppinglayer) 暴露。最終’獲得平坦的無缺陷表面,其使得能夠由後續 光刻圖案化、触刻及薄膜加工進行適合之多層裝置製 造。 4 201226491 淺溝槽隔離(Shallow trench isolation,STI)為〜 CMP應用’其—般需要在圖案化晶圓基材上對氮化矽2 性移除二氧化矽。在此情況下’用例如二氧化矽之介電質 材料過量裝填經蝕刻之溝槽,研磨該介電質材料並以氮化 :障壁膜作為停止層。纟自障壁膜清除二氧切同時使暴 露之氮化矽及溝槽氧化矽之移除減至最少的情況下纟士 = CMP方法。 ° 此舉需要CMP漿料能夠達到二氧化矽材料移除率 對氮切移除率MRR之高㈣比率,該比率在該項技藝中 亦稱為氧化物對氮化物之選擇性(〇xide七心 selectivity)。 近來,多晶矽薄膜亦用作為障壁膜或電極材料(參考美 國專利US 6,626,968 B2)。因此,讓包含氧化矽介電質材料 及多晶膜之基材的全面平坦化之CMp聚料及方法成為高度 所需者。此需要展現高氧化物對氮化物之選擇性之cMp 料。 7 甚至更需要的是可使另外含有氮化石夕薄膜之基材全面 平坦化之CMP漿料及方法。 在此情況下’為避免含有氧化石夕、氮化石夕及多晶石夕區 域之經全面平坦化、異質、經圖案化之表面中之碟型凹陷 (dishing)及其他破壞及缺陷,其氧化物對氣化物之選擇 ^不應太高H其氮切對多晶⑪之選擇性亦應該是 面的。 在STI應用中,基於氧化鈽之CMp聚料已因其能夠獲 201226491 得較高的氧化物對氮化物之 選擇性而頗香關,士 化物對氮化物之選擇性係 又關注,而該高氧 學親和力,此在該項技藝令一乳匕夕之高化 / , 丹向乳化飾之化聲I & (tooth action )。 丨< 予牙齒作用 儘管如此,必須藉由「 & ^ ^ 夕」该選擇性之添加劑以;^ 良基於氧化鈽之CMP漿料的备儿也 Μ以改 浆枓的虱化物對多晶矽之選擇性。 已夕次嘗試修改基於氧》姑+ ^ 孔化鈽之CMP漿料的選擇性。 因此,Jae-Don Lee # 哥人在 Journal of th EI_chemical Society,149 (8),g477 g48i,2〇〇2 中 e 氧化矽作為 不:具有不同親水-親脂平衡(HLB)值之非離子界面活性 劑’諸如聚氧化乙烯、氧化乙稀·氧化丙稀共聚物及氧化乙 浠-氧化丙烯-氧化乙烯三嵌段共聚物對⑽期間氧化物對 多晶石夕之選擇性之影響。然而’使用煙霧狀 磨料。 P.W.Carter 等人在 Electrochemical and Solid-State
Letters,8 (8) G218-G221 (2005)之氧化鈽與二氧化矽與氮化 石夕表面之介面反應性’有機添加反應(Interfacial Reactivity between Ceria and Silicon Dioxide and Silicon Nitride Surfaces,Organic Additive Effects)中揭示麩胺酸、吡咬叛 酸、4-烴苯甲酸、咪唑、乙酸、甲酸、3-烴基η比啶羧酸、鄰 胺苯曱酸、吡11各羧酸、環己烧羧酸、派啡、吼啶、2-苯乙酸、 苯曱酸、3-胺苯酚、琥珀酸、甜菜鹼、甘胺酸、脯胺酸、苯 磺酸、嗎啉、柳酸、對苯二曱酸、蘋果酸、異丙醇、檸檬 酸及草酸對於氧化物對氮化物之選擇性之影響。 201226491 Y. N. Prasad 等人在 Electrochemical and Solid-State Letters,9 (12) G337-G339 (2006)中之在 STI CMP 過程中二 氧化矽及氮化矽表面之胺-酸吸收的角色(R〇le 0f Amino-Acid Absorption on Silica and Silicon Nitride Surfaces during STI CMP)中揭示脯胺酸及精胺酸之影響。
Hyun-Goo Kang 等人在 Journal of Material Research, 卷22, No. 3, 2007,第777至787頁揭示在淺溝槽隔離化學 機械平坦化中,氧化姉聚料中之聚丙稀酸之磨料粒度及分 子量對Si02/Si3N4膜移除選擇性之影響。 S. Kim 等人在 Journal of Colloid and Interface Science, 319 (2008)第48至52頁中揭示用於化學機械研磨(CMP) 之陰離子高分子電解質(polyelectrolyte)之吸收作用。 S. V_ Babu 等人在 Electrochemical and Solid-State Letters,7 (12) G327-G330 (2004)之在 CMP 過程中漿料添加 劑對於抑制氮化矽移除之影響(Slurry Additive Effects 〇n the Suppression of Silicon Nitride Removal during CMP)中 探討精胺酸、離胺酸、脯胺酸、N-甲基甘胺酸、丙胺酸、 甘胺酸、吡啶羧酸、Ν,Ν-二曱基甘胺酸、3-丁胺酸及異菸鹼 酸之影響。
Jae-Dong Lee 等人在 Journal of the Electrochemical Society,149 (8),G477-G481,2002 中之化學機械研磨期 間,非離子界面活性劑對氧化物對多晶矽之選擇性的影響 (Effects of Nonionic Surfactants on Oxide-To-P〇lySiiicon Selectivity during Chemical Mechanical Polishing)揭示:諸 201226491 如聚氧化乙稀(PE〇)〗氧化乙稀-氧化丙烯-氧化乙烯三嵌 段共聚物之界面活性劑對選擇性的影響1而,氧化物對 氮化物之選擇性並未解決。 美國專利 US 5,738,800、US 6,042,741、US 6,132,637 及US 6,218,刪揭示—種基於氧化狀⑽㈣,其含 有諸如蘋果酸、酒石酸 '葡萄糖酸、檸檬酸、冑二煙笨甲 酸及聚烴苯甲冑 '鄰苯二甲酸、兒茶齡、焦五倍子酴、五 倍子酸、單寧酸及其鹽類之錯合劑。此外,基於氧化飾之 CMP浆料含有陰離子' 陽離子、兩性或非離子性界面活性 劑。其主張該基於氧化鈽之CMP漿料具有高氧化物對氮化 物之選擇性。 美國專利 US 5,759,917、US 6,689,692 B1 及 us 6,984,588 B2揭示一種基於氧化鈽之CMp漿料,其包含羧 酸(諸如乙酸、己二酸、丁酸、癸酸、己酸、辛酸、檸檬酸、 戊二酸、乙醇酸、甲酸、反丁烯二酸、乳酸、月桂酸、蘋 果酸、順丁烯二酸、丙二.酸、肉豆蔻酸、草酸、掠櫚酸、 鄰苯二甲酸、丙酸、丙酮酸、硬脂酸、琥珀酸、酒石酸、 戊酸、2-(2-曱氧乙氧)乙酸、2_[2·(2_甲氧乙氧)乙氧]乙 酸、聚(乙二醇)二(羧曱基)醚及其衍生物及鹽類)。此外,該 基於氧化鈽之CMP漿料包含水溶性有機及無機鹽類,諸如 硝酸鹽、磷酸鹽及硫酸鹽。其主張該基於氧化鈽之CMp漿 料優於氮化矽層地研磨氧化矽過填物。 美國專利US 6,299,659B1揭示一種基於氧化鈽
之CMP t料’其中以矽烷、鈦酸鹽、鍅酸鹽、鋁及磷酸鹽麵合劑 8 201226491 處理磨料顆粒以改善氧化物對氮化物之選擇性。 美國專利申請案US 2002/0034875 A1及美國專利us 6,626,968 B2揭示一種基於氧化鈽之CMp漿料,其含有界 面活性劑;pH調節劑’諸如氫氧化鉀、硫酸、硝酸、鹽酸 或碌酸;及含有親水性官能基及疏水性官能基之聚合物, 諸如聚乙烯曱醚(PVME )、聚乙二醇(peg )、聚氧化乙稀 23月桂醚(p〇le )、聚丙酸(ppa )、聚丙烯酸(pm )及聚 乙二醇二甲醚(PEGBE )。該基於氧化鈽之CMP漿料增加 氧化物對多晶矽之選擇性。 美國專利US6,436,835B1揭示一種用於淺溝槽隔離製 程之基於氧化鈽之CMP漿料,其包含具有羧酸或羧酸鹽或 磺酸或磺氨基團之水溶性有機化合物,諸如聚丙烯酸、聚 甲基丙烯酸、萘磺酸-福馬林縮合物、蘋果酸、乳酸、酒石 酸、葡萄糖酸、擰檬酸、琥珀酸、己二酸、反丁烯二酸、 天門冬胺酸,麩胺酸、甘胺酸4_丁胺酸、6_胺己酸、12_胺 月桂酸、精胺酸、甘胺醯基甘胺酸、月桂苯磺酸及其鹽類。 其主張該基於氧化鈽之CMP漿料具有高氧化物對氮化物之 選擇性。
美國專利 US 6,491,843 Bl、US 6,544,892 B2 以及 US 6’627’1〇7 B2揭示一種改善氧化物對氮化物之選擇性之基 於氧化鈽之CMP漿料,其含有諸如離胺酸、丙胺酸及脯胺 酸之α-胺酸。 美國專利US 6,616,5 14 Β 1揭示一種改善氧化物對氮化 物之選擇性之基於氧化鈽之CMP漿料,其含有具有至少3 9 201226491 個在水性介質中不易解離的羥基之有機多元醇;或由至少 一種具有至少3個在水性介質中不易解離的羥基之單體所 形成之聚合物,諸如甘露醇、山梨糖醇、甘露糖、木糖醇、 山梨糖、嚴糖及糊精。
美國專利US 7, 071,105 B2及美國申請案US 2006/G144824A1揭示一種含有研磨添加物之基於氧化鈽之 CMP漿料’該研磨添加物包含具有pKa為4至9之官能基。 遠研磨添加物係選自由下列組合之群組:芳基胺、胺醇、 月曰族胺' 雜環胺、羥胺酸、胺羧酸、環單羧酸、不飽和單 羧酸、經取代之苯酚、磺醯胺、硫醇及其鹽類,尤其是氣 化物、漠化物、硫酸鹽、磺酸鹽、三氟曱基磺酸鹽、乙酸 鹽、二氟乙酸鹽、苦味酸鹽、全氟丁酸鹽以及鈉、鉀、錄 鹽類。 特別提及,該芳基胺為苯胺、4_氣苯胺、3_曱氧苯胺、 N-甲基笨胺、4·曱氧苯胺、對曱苯胺、鄰胺苯甲酸、弘胺-4_ 羥基苯磺酸、胺苯甲基醇、胺苯曱基胺、丨_(_胺苯)吡咯、丨_(3_ 胺苯)乙醇、2-胺苯醚、2,5_雙·(4_胺苯)djj·聘二唑、2_(2· 胺苯)-1Η-1,3,4-三唑、2_胺苯、3_胺苯、4_胺苯、二甲基胺 本酚、2-胺苯硫醇(2_aminothi〇lphen〇1)、3_胺笨硫醇、4·胺 苯甲硫醚(4-aminophenyl methyl sulfide)、2_ 胺苯磺醯胺、 鄰胺苯磺酸、3-胺苯硼酸、5-胺異鄰苯二甲酸、乙醯磺胺、 磺胺酸、鄰胺苯胂酸或對胺苯胂酸及(3R)_3_(4-三氟甲基笨 胺)戊酸。 土 特別提及,該胺醇為三乙醇胺、苯甲基二乙醇胺、三(羥 10 201226491 曱基)胺甲烧、經胺及四環素。 特別提及,該脂族胺為甲氧基胺、羥胺、N_曱基羥胺、 N,0-二甲基羥胺、召_二氟乙基胺、乙二胺、三伸乙二胺 (triethylenediamine)、((丁基胺)(2_羥基笨)甲基)磷酸二乙 酯、亞胺乙烷、亞胺丁烷、三烯丙胺、諸如胺乙腈之氰胺、 一曱基胺乙腈、2-胺基-2 -氰丙烷、異丙基胺丙腈、二乙基 胺丙腈、胺丙腈、二氰二乙基胺、肼、甲基肼、四曱基肼、 Ν,Ν·二甲基肼、苯肼、N,N_:乙基肼、三甲基肼、乙基肼 及其鹽類。 特別提及,該雜環胺為咪唑、1 ·甲基咪唑、2_甲基咪唑、 2-乙基咪唑、2-羥甲基咪唑、1-甲基_2_羥曱基咪唑、苯并咪 0坐、啥琳、異啥琳、經基啥琳、三聚氰胺、D比咬、二η比咬、 2-曱基吼啶、4-甲基吡啶、2-胺吡啶、3-胺吡啶、2,3-吡啶 二羧酸、2,5-吡啶二羧酸、2,6-吡啶二羧酸、5-丁基-2-。比啶 羧酸、2-吡啶羧酸、3-羥基-2-吼啶羧酸、4-羥基-2-。比啶羧 酸、3-苯甲醯基-2-吡啶羧酸、6-甲基-2-吡啶羧酸、3-甲基-2-0比咬叛酸、6 -漠基-2 - »比咬缓酸、6 -氣基-2 -η比咬叛酸、3,6 -二氯基-2-吡啶羧酸、4-肼基-3,5,6-三氣基-2-吡啶羧酸、2-喹啉羧酸、4-甲氧基-2-喹啉羧酸、8-羥基-2-喹啉羧酸、4,8-羥基-2-喹啉羧酸、7-氣基-4-羥基-2-喹啉羧酸、5,7-二氣基 -4-羥基-2-喹啉羧酸、5-硝基-2-喹啉羧酸、1-異喹啉羧酸、 3 -異喹琳羧酸、吖啶、苯并喹啉、苯并吖啶、可尼丁、毒藜 驗、降终驗、三°坐11比咬 ' "比哆醇、腦激胺、組織胺、苯二 氮平、吖環丙烧、嗎淋、1,8 -二吖雙環(5,4,0)十一稀 201226491 DAB CO、六亞甲四胺、哌啡、N-苯甲醯基哌啡、^續酋篮基 哌畊、N-羧乙基哌啡、I,2,3-三唑、1,2,4_三唑、2_胺嚷嗤' 。比咯、吡咯-2-羧酸、3-二氫吡咯-2-羧酸、乙基二氫吡嘻、 環己基二氫。比π各、W二氫0比洛(tolylpyrroline)、四π坐、5-環 丙基四唑、5 -羥基四唑、5 -苯氧基四唑、5 -苯四唑、氟尿0密 啶、甲基硫尿嘧啶、5,5-二苯尿囊素、5,5-二曱基-2,4-聘。坐 啶二酮、酞醯亞胺、琥珀醯亞胺、3,3-甲基苯戊二醯亞胺 (3,3-methylphenylglutarimide)、3,3-二曱基琥珀醯亞胺、。米 唑[2,3-b]噻曜唑(thioxazole)、羥基咪唑[2,3-a]異叫丨》朵 (hydroxyemidazo[2,3-a]isoindole)、5,5·曱基苯巴比妥酸、 1,5,5-三甲基巴比妥酸、六巴比妥鹽、5,5_二曱基巴比妥酸、 1,5-二曱基-5-苯巴比妥酸及其鹽類。 特別提及,該異羥肟酸(hydroxamic acids)為甲異經肪 酸、乙異羥肟酸、苯異羥肟酸 '柳異羥肟酸、2_胺苯異羥肟 酸、2-氣苯異羥肟酸' 2-氟異羥肟酸、2-硝苯異羥肟酸、3_ 确苯異經肟酸、4_胺苯異羥肟酸、4_氣苯異羥肟酸、4氟苯 異經砖酸、4 -确苯異經肪酸及其鹽類。 特別提及,該胺羧酸為麩胺酸、β_羥基麵胺酸、天門冬 胺酸、天門冬醯胺酸、氮絲胺酸、半胱胺酸、組胺酸、3_ 曱基組胺酸、胞嘧啶、7-胺頭孢烷酸(7_amin〇cephal〇sp〇ranic acid)及肌肽。 特別提及,該環單羧酸為萘_2_羧酸、環己烷羧酸、環 己乙酸、2-苯乳酸、4-烴苯曱酸、3_烴苯甲酸、2_吡啶羧酸、 順-%己烷羧酸及反-環己烷羧酸、苯曱酸及其鹽類。 12 201226491 特別提及,該不飽和單羧酸為桂皮酸、丙烯酸、3 -氣丙 基-2-稀叛酸、巴豆酸、4 -丁-2 -稀叛酸、順-2 -戊酸或反-2-戊酸、2-甲基-2-戊酸、2-己烯酸及3-乙基-2-己烯酸及其鹽 類。 特別提及,該苯酚為硝苯酚、2,6-二函基-4-硝苯酚、2,6-二烷基-4-硝苯酚、2,4-二硝苯酚、3,4-二硝苯酚、 2-〇1-12-烧基-4,6-二硝苯盼、2-_基-4,6-二硝苯盼、二硝基-鄰-甲酚、苦味酸及其鹽類。 特別提及,該磺醯胺為氣莳磺醯胺、二氯苯醯胺磺 胺米隆(dichlorophenamide mafenide)、尼美舒利 (nimesulide)、績胺曱°塞°坐、續胺普羅林(sulfaperin)、乙醯 績胺、續胺鳴咬、續胺二曱啡(5111【3(11社1:110父1116)、績胺 二甲嘴。定、績胺°比唆、績胺喧曙琳(sulfaquinoxaline)及其鹽 類。 特別k及,β亥硫Sf·為二硫化二風、半脱胺、半脱胺酿 基半胱胺酸、曱基半胱胺酸、硫酚、對-氣硫酚、鄰-胺苯硫 醇、鄰-硫醇苯乙酸對-硝基苯硫酚、2_硫醇乙基磺酸鹽、N_ 二曱基半胱胺、二丙基半胱胺、二乙基半胱胺、硫醇乙基 嗎啉、甲基硫乙醇酸鹽、硫醇乙基胺、N_三曱基半胱胺酸、 麵胱甘肽、硫醇乙基哌啶、二乙基胺丙烷硫醇及其鹽類。 咸信該等研磨添加劑提高氧化物對氮化物之選擇性。 美國專利申請案US 2006/0124594 A1揭示一種基於氧 化鈽之CMP漿料,其具有至少15 cp之黏度且包含增黏 劑,該增黏劑包括諸如聚乙二醇(PEG )之非離子聚合物。 13 201226491 據稱該基於氧化鈽之CMP毁料具有高氧化物對氮化物 擇性及低晶圓内非均勻性WIWNU。 、 美國專利申請案us 2006/0207i88幻揭示一種基於氧 化飾之CMP聚料,其含有諸如聚丙烯酸或聚(曱基丙稀酸院 基酉旨)之聚合物與諸如丙稀酿胺、甲基丙稀酿胺、乙基_甲基 丙稀醯胺6稀基吼咬或乙烯吼略咬酮之單體的反應產 物。咸信該等反應產物亦增加氧化物對氮化物之選擇性。 美國專利申請案US 2006/0216935 A1揭示一種基於氧 化鈽之CMP聚料,其包含蛋白質、離胺酸及/或精胺酸,及 0比0各咬酮化合物,错士枣7 β ^ 渚如挈乙烯吡咯啶酮(PVP)、N-辛基-2_ 吡咯啶酮、N-乙基_2·吡咯啶酮、N,乙基_2·吡咯啶酮、N_ 環己基-2-吡咯啶_、N•丁基々·吡咯啶酮、n_己基_2_吡咯啶 酮'N-癸基〜比㈣_、N_十八院基〜比洛咬嗣及N_十六 院W各相。基於氧化鈽之CMp聚料可另外含有分散 劑’如聚丙烯酸、乙二醇及聚7 _ 酥及笊乙—酵。特定實例使用脯胺 酸、聚乙烯…,或N_辛基·2_。比略相、pp〇/pE〇嵌段 共聚物及戊二f咸信該基於氧化鈽之cMp聚料未侵略性 地移除溝槽二氧化矽’ S而允許超出端點之延伸性研磨而 未實質上增加最小的梯級高度。 美國專利申請案US 2007/0077865 AW示一種基於氧 化鈽之CMP毁料’其含有較佳來“ BASF銷售之 ㈣聚氧化乙烯/聚氧化丙稀共聚物。基於氧化 飾之CMP t料可另外含有絲醇,諸如2二甲基胺基_2_ 甲基]丙醇(DMAMP)、2_胺基.2_乙基小丙醇(AW)、 201226491 2-(2-胺基乙基胺基)乙醇' 2_(異丙基胺基)乙醇、2_(甲基胺 基)乙醇、2·(二乙基胺基)乙醇、2_(2_二甲基胺基)乙氧基) 乙醇、1,1’-[[3-(二曱基胺基)丙基]亞胺基]•雙_2_丙醇、 丁基胺基)乙醇、2-(第三丁基胺基)乙醇、2_(二異丙基胺基)_ 乙醇及N-(3-胺基丙基)嗎啉。該基於氧化鈽之CMp漿料^ 另外含有四級銨化合物,如四甲基銨氫氧化物;成臈劑, 諸如烷基胺、烷醇胺、羥胺、磷酸醋、月桂基硫酸鈉、脂 肪酸、聚丙烯酸酯、聚甲基丙烯酸酯、聚乙烯基膦酸酯、曰 聚蘋果酸醋、聚本乙烯續酸酯、聚乙烯硫酸酯、苯并=唾 三唑及苯并咪唑;及錯合劑,諸如乙醯丙酮、乙酸鹽、乙 醇酸鹽、乳酸鹽、葡糖酸鹽、五倍子酸、乙二酸鹽、鄰笨 二甲酸鹽、檸檬酸鹽、琥珀酸鹽、酒石酸鹽、蘋果酸鹽、 乙二胺四乙酸、乙二醇、兒茶酚、焦五倍子酸、鞣酸、鱗 鹽及膦酸。咸信該基於氧化铈之CMp漿料提供氧化矽相對 於多晶矽之良好選擇性及/或氮化矽相對於多晶矽之良好選 擇性。 、 美國專利申請案US 2007/0175104 A1揭示一種基於氧 化鈽之CMP㈣’其包含多晶料磨抑制劑,選自具有經 任何選自由下列組成之群組之成員取代的N—單取代或N,… 二取代骨架之水溶性聚合物:丙烯醯胺、曱基丙烯醯胺及 其α-取代衍生物;聚乙二醇;聚乙稀。比略咬綱;烧氧基化 之哀鏈脂族醇及基於乙炔之二醇的氧化乙烯加合物。基於 氧化鈽之CMP漿料可含有額外的水溶性聚合物,諸2多 酷,如海蕩酸、果膠酸、m曱基纖維素、填脂、卡德蘭 15 201226491 (curdlan )及普魯蘭(puiiuUn );聚羧酸,諸如聚天冬胺酸、 聚麩胺酸、聚離胺酸、聚蘋果酸、聚曱基丙烯酸、聚醢亞 胺酸、聚順丁稀二酸、聚衣康酸、聚反丁締二酸、聚(對苯 乙烯羧酸)、聚丙烯酸、聚丙烯醯胺、胺基聚丙烯醢胺、聚 乙醛酸及其鹽;及乙烯基聚合物’諸如聚乙烯醇及聚丙稀 醛。據稱該基於氧化鈽之CMP漿料具有高氧化石夕對多晶石夕 之選擇性。
丁酸鹽、己J 二酸 鹽、 、戊二酸鹽、 亞1 f基 -半乳- 庚 糖 甘露- 辛 糖 -半乳- 壬 糖 基於氧化鈽 之CMP 甘油 美國專利申請案US 2007/0191244 A1揭示一種基於氧 化鈽之CMP漿料,其含有具有30至5 00之重量平均分子 量且含有經基及敌基或兩者之化合物,諸如搏檬酸鹽、韻 果酸鹽、葡糖酸鹽、酒石酸鹽、2-羥基異丁酸鹽、己二酸鹽 辛酸鹽、琥珀酸鹽、含EDTA之 琥珀酸鹽、甘露糖, (glycerol-galacto-heptose)、 赤-(erythro-manno-octose)、阿拉伯 (arabino-galacto-nonose)及麵胺酿胺。ί 漿料可另夕卜含有線性聚合物酸或具有烷氧基聚伸烷二醇側 鏈之接枝型聚合物酸。據稱該基於氧化飾之CMp毁料達到 改良之研磨晶圓之全面平坦度。 美國專利申請案US2007/02 i 88丨丨A丨揭示一種基於氧化 姉CMP腹料,其具有4至7.5之PH值且包含分散劑、聚叛 酸及100 i 1000ppm之強酸,該強酸具有pKa值為3 2或 小於3.2之第-可解離之酸基。由實例提及,丙烯酸及甲基 丙烯酸之聚合物作為陰離子分散劑,聚氧乙烯衍生物作為 16 201226491 非離子性分散劑,及聚乙烯四氫咯酮作為陽離子分散劑。 明確提及,強酸為硫酸、HC1、ί肖酸、鱗酸、草酸、順丁烯 二酸、苦味酸、亞硫酸、硫亞硫酸(thiosulfurous acid)、醯 胺基硫酸、氣酸、過氣酸、亞氯酸、氫峨酸、過峨酸、埃 酸、氫溴酸、過溴酸、鉻酸、亞硝酸、二膦酸、三聚填酸、 次膦酸(phosphinic acid),D比咬緩酸、膦酸、異终驗酸、终驗 酸、三氣基乙酸、二氣基乙酸、氯基乙酸、氰乙酸、草乙 酸、硝基乙酸、溴基乙酸、氟基乙酸、苯氧基乙酸、鄰_演 基苯曱酸、鄰-硝基苯甲酸、鄰-氣基苯甲酸、對-胺苯曱酸、 鄰胺苯曱酸、鄰苯二甲酸、反丁烯二酸、丙二酸、酒石酸、 檸檬酸、鄰-氣基苯胺、2,2'-聯吡啶、4,4'-聯吡啶、2,6-吡咬 二羧酸、丙酮酸、聚苯乙烯磺酸、聚磺酸、麩胺酸、柳酸、 天門冬胺酸、2-胺乙基膦酸、離胺酸、精胺酸、異白胺酸、 肉胺酸、鳥胺酸、鳥皆、瓜胺酸、赂胺酸、绳胺酸、次黃 嘌呤、曱硫胺酸、離胺酸、及白胺酸。據稱該基於氧化飾 之CMP漿料促成有效率高速操作、較簡單製程管理及較小 的膜厚度變動(因不同圖形密度所造成的)。 美國專利申請案 US 2008/0085602 A1及 us 2008/0124913 A1揭示一種基於氧化鈽之CMP漿料,其含 有〇_〇01重量%至0.1重量%之選自氧化乙烯-氧化丙稀_氧 化乙烯三嵌段共聚物及聚丙烯酸之非離子界面活性劑作為 分散劑。據稱該基於氧化鈽之漿料具有高氧化矽及氮化石夕 對多晶矽之選擇性。 電子裝置’尤其半導體積體電路(1C)之製造需要尤 17 201226491 其涉及高選擇性CMP之高精度方法。 雖然先前技藝之基於氧化鈽之CMP漿料可具有令人滿 意的氧化物對多晶矽、氧化物對氮化物及氮化物對多晶矽 之選擇性且可得到具有良好的全面及局部平坦度之研磨的 晶圓(如晶圓内非均勻性(WIWNU )及晶圓間非均勻性 (WTWNU)所例示),但IC架構,尤其具有⑶(大規模積 體)或VLSI (超大規模積體)之不斷減小之Ic尺寸需要持 續改良基於氧化錦之CMP製料,以便滿足積體電路裝置製 造商日益增長之技術及經濟要求。 然而,此持續改良先前技藝之基於氧化鈽之CMp漿料 的迫切需要不僅適用於積體電路裝置領域,而且亦需改良 在製造下列裝置之領域中之研磨及平坦化功效其他電子 裝置.諸如液晶板、有機電場發光面板、印刷電路板、微 型機器、DNA a曰曰片、微型工廠、光伏打電池及磁頭;高精 度機械裝置及光學裝置(尤其光學玻璃”諸如光罩、透鏡及 稜鏡)、無機導電膜(諸如氧化銦錫(IT〇 )、光學積體電路、 光學交換元件、光學波導、光學單晶(諸如光學纖維端面 及閃爍體)' 固體雷射單晶、用於藍色雷射LED之藍寶石基 材、半導體單晶及用於磁碟之玻璃基材。該等電子及光學 裝置之製造亦需要高精度CMP方法步驟。 歐洲專利申請案EP 1 338 636 A1揭示一種基於氧化飾 之CMP漿料,其包含抗凝固劑’其係選自由纖維素、結晶 纖維素、纖維素衍生物、二氧切、海藻酸鹽、ρ·萘續酸鹽 福馬林縮合物、磷酸氫鈣、蛋白質、多肽及有機高分子絮 (8 201226491 凝劑組成之群組;及分散劑或界面活性劑’諸如縮合磷酸 鹽,如焦鱗酸、焦填酸納、三填酸納或六偏鱗酸納。然而, 其僅揭示玻璃之研磨。 曰本專利申請案JP 2005-336400 A揭示一種基於氧化 鈽之CMP漿料,其包含水溶性縮合磷酸鹽,諸如焦磷酸鹽、 三聚磷酸鹽及六偏磷酸鹽;及水溶性碳酸鹽或碳酸氫鹽。 該基於氧化飾之CMP漿料可另外含有水溶性有機溶劑,諸 如甲醇、乙醇、1-丙醇、2-丙醇、1-丁醇、2-丁醇、乙二醇、 丙二醇及1,2,3-丙三醇、酮(諸如丙酮及甲基乙基酮)、四 氫呋喃、N,N-二曱基甲醢胺、二曱亞砜及込肛二^号烷。據 稱該基於氧化鈽之cyp漿料已在研磨準確性、清潔、初始 研磨速度及研磨速度方面改良研磨。然而,其僅揭示玻璃 之研磨。 曰本專利申請案JP 2001-240850 A揭示一種CMP漿 料,其含有氧化鋁、氧化錯或碳化矽作為磨料;氧化烯-氧 化乙烯嵌段或隨機共聚物作為分散劑且磷酸鈉或聚磷酸鈉 作為「防錄劑」。該CMP漿料用於研磨石夕晶圓、玻璃、紹、 陶瓷、合成二氧化矽、石英及藍寶石。 本發明之目的 本發月之目的為提供一種新穎水性研磨組成 物’評言之種新賴化學機械研磨(CMp)、組成物,特 別是一種新賴的基於氧化鈽之CMP浆料,其不再展現先前 技藝研磨組成物之缺陷及缺點。 吕羊s之’新穎水性研磨全日+仏 研厲,,且成物,尤其是新穎化學機械 19 201226491 研磨(CMP)組成物,特別是新穎的基於二氧化鈽之CMp 漿料應展現經顯著改良之氧化物對多晶矽之選擇性且得到 具有如晶圓内非均勻性(WIWNU )及晶圓間非均勻性 (WTWNU)所例示之卓越的全面及局部平坦度之經研磨的 晶圓《因此,其應優異地適於製造具有尺寸小於5〇 之 結構的ic架構,尤其具有LSI (大規模積體)或vlsi (超 大規模積體)之1C。 此外,新穎水性研磨組成物,詳言之新賴化學機械研 磨(CMP)組成物且特別是新賴的基於氧化姉之cMp㈣ 將不僅格外適用於積體電路裝置領域,而且將最有效且有 利地適用於在製造下列裝置之領域中:其他電子裝置,諸 士曰口液晶板、有機電致發光板、印刷電路板、微型機器、D N A 晶片、微型卫廠及磁m高精度機械裝置及光學裝置, 詳言之,光學玻璃(諸如光罩、透鏡及稜鏡)、無機導電膜 (諸如氧化銦錫(IT0))、光學積體電路、光學交換元件、、 光學波導、光學單晶(諸如光學纖維端面及閃爍體)、固體 雷射早晶、用於藍色雷射LED之藍寶石基 及用於磁叙麵基材。 ㈣早sa 古f 2別的是’該新賴之基於氧化鈽之㈣⑽應展現 擇性。夕曰曰石夕之選擇性及適中之氧化物對氮化物之選 本發明之進 及光學裝置基材 質及多晶碎膜, —步目的為提供一種用於研磨機械、電子 的新穎方法,該基材材料含有氧化矽介電 可視情況地含有氮化矽膜。 20 201226491 發明摘要 因此’已發現新穎水性研磨組成物, 卿5玄水性研磨組成 物包含 x (A) 至少-種類型之磨料顆粒,當其分散於不含成八 (C)且具有範圍介於3至9之pH值的水性介質中時帶: 電,如電泳遷移率所證明; (B) 至少一種水溶性或水分散性聚合物,其係選自由 線性及分枝氧化烯均聚物及共聚物所組成之群組;及 (C )至少一種陰離子磷酸鹽分散劑。 在下文中,該新穎水性研磨組成物稱為「本發明之組 成物」。 此外,已發現用於研磨機械、電子及光學裝置基材的 新穎方法,該方法係藉由使基材材料與本發明之組成物接 觸至少一次且研磨該基材材料直至達成所需平坦度為止。 在下文中,用於研磨機械、電子及光學裝置基材材料 的新穎方法稱為「本發明之方法」。 本發明之優點 鑒於先前技藝,令熟習該項技藝者驚訝且未能預期的 是,本發明之目的可藉由本發明之組成物及本發明之方法 來解決。 尤其令人驚訝的是,本發明之組成物展現顯著改良之 氧化物對多晶矽之選擇性且得到具有如晶圓内非均勻性 (WIWNU )及晶圓間非均勻性(WTWNU )所例示之卓越的 全面及局部平坦度之經研磨的晶圓。因此,其優異地適於 21 201226491 製造具有尺寸小於5〇 nm之結構的1C架構,尤其具有[si (大規模積體)或VLSI (超大規模積體)之IC。 另外’本發明之組成物在長期運輸及儲存期間為穩定 的’該穩定性顯著地改良其物流及方法管理。 此外’本發明之組成物不僅格外適用於積體電路裝置 領域,而且最有效且有利地適用於在製造下列裝置之領域 中·其他電子裝置,諸如液晶板、有機電致發光板、印刷 電路板、微型機器、DNA晶片、微型工廠及磁頭;以及高 精度機械裝置及光學裝置,特言之,光學玻璃(諸如光罩、 透鏡及稜鏡)、無機導電膜(諸如氧化銦錫(IT〇 ))、光學 積體電路' 光學交換元件、光學波導、光學單晶(諸如光 學纖維端面及閃爍體)、固體雷射單晶、用於藍色雷射[ED 之藍寶石基材、半導體單晶及用於磁碟之玻璃基材。 最特別的是,本發明之組成物亦展現高氮化物對多晶 石夕之選擇性及適中之氧化物對氮化物之選擇性。 因此,本發明之組成物最尤其適用於本發明之方法。 本發明之方法可最有利地用於研磨(詳言之化學機械研磨) 電子裝置之基材材料’ t亥等電子裝置諸如液晶板、有機電 致發光板、印刷電路板、微型機器、DNA晶片、微型工廠 及磁頭;以及高精度機械裝置及光學裝置之基材材料,尤 其是光學玻璃(諸如光罩、透鏡及稜鏡)、無機導電膜(諸 如氧化銦錫(ITO))、光學積體電路、光學交換元件、光學 波導、光學單晶(諸如光學纖維端面及閃爍體)、固體雷射 單晶、用於藍色雷射LED之藍寶石基材、半導體單晶及用 22 201226491 於磁碟之玻璃基材。 然而,最尤其是,本發明之方法優異地適於研磨含有 氧化石夕介電質膜及多晶石夕膜(可視情況地含有氮化發膜)之 半導體晶圓。本發明之方法得到具有如晶圓内非均勻性 (WIWNU )及晶圓間非均自性(WTWNU )所例示之無盤狀 凹陷、杯狀凹陷或熱點(hotsp〇t)之卓越的全面及局部平 坦度及均衡性之經研磨的晶圓。因此,該等晶圓優異地適 於製造具有尺寸小於50nm之結構的IC架構,尤其具有LSI (大規模積體)或VLSI (超大規模積體)之1(:。 【本發明之詳細說明】 本發明之組成物為_種水性組成物。其意指該組成物 3有水(尤其超純水)4乍為主溶劑及分散劑。儘管如此, 本發明之組成物可含有至少一種可與水混溶的有機溶劑, 但該有機溶劑之量為僅含有不改變本發明之組成物的水性 性質之少量。 本發明之組成物較佳含有6〇重量%至99 95重量%、 更佳70重量/。至99 9重量%、甚至更佳重量%至99 9 重里°/〇且最佳90重量%至99 9重量%之量的水該等重量 百分比以本發明之組成物的總重量計。 水各性」意指本發明之組成物的相關成分或組分可以 分子程度溶解於水相中。 水/刀散性」意指本發明之組成物的相關成分或組分可 刀散於水相中且形成穩定的乳液或懸浮液。 一必需組分為至少一種 (較佳一 本發明之組成物的第 23 201226491 種)類型之磨料顆粒(A )。 刀放於不3下文所述之陰離子磷酸鹽分散劑(c)且 具有範圍介於3至9之PH值的水性介質中時,磨料顆粒(A) 帶正€ °由磨料顆粒(A)之電泳遷移率μ (μηι/s) (V/cm) 來證明該正電荷。電泳遷移率μ可使用諸如灿⑽,副 之Zetasizer Nano之儀器直接量測。 磨料顆粒(A)之平均粒徑可大範圍變化,且因此可最 有利地調節至本發明之既定組成物及方法的特定要求。如 動態雷射光散射所測定之平均粒徑較佳在1至2嶋nm、較 〇 nm、更佳1至750 nm且最佳1至5〇〇 nm之範 圍内。 磨料顆粒(A )之粒徑分佈可為單峰、雙峰或多峰。粒 徑分佈較佳為單峰以便在本發明之方法期間具有易重現的 磨料顆粒(A )之性質特徵及易重現的條件。 "此外’磨料顆粒(A)之粒徑分佈可為窄的或寬的。粒 後分佈較佳為窄的’僅具有少量小顆粒及大顆粒,以便在 本發明之方法期間具有易重現的磨料顆粒⑴之性質特徵 及易重現的條件。 料顆粒(A )可具有多種形狀。因此,該等形狀可 種或實質上-種類型之形狀。然而,磨料顆粒⑷ 可旎具有不同形狀。詳言之’兩種類型形狀不同的磨料 粒(A)可存在於本發明之既定組成物令。關於形狀本身 其可為立方體、具有斜切邊之立方體、八面體、二十面體 瘤狀(nodule )及具有或不具有突起或凹穴之球體。形狀 24 201226491 佳為無或僅具有極少突 狀,因為其通常增加磨料顆粒凹^之球體。照例偏好此形 所暴露之機械力的抗性。 )在CMP方法期間對其 组成物 任何類型之磨料顆粒(A )均可用於本發明之 組成物’只要其具有上述性 發月之 可為有機或無機顆粒咬有機I/。因此,磨料顆粒⑷ 較佳為無機顆粒。 、、機混雜顆粒。磨料顆粒⑷ 原則上’任何類型之無機磨料顆粒(A )均可用於本發 明之組成物’只要其具有上述性質特徵 '然而,最佳使用 含有氧化鈽或由氧化鈽組成之無機磨料顆粒(a)。 含有氧化鈽之磨料顆粒(A)可含有少量其他稀土金屬 氧化物。 含有氧化鈽之磨料顆粒(A)較佳為包含一核心之複合 顆粒,該核心含有至少一種其他磨料顆粒材料或由至少一 種其他磨料顆粒材料組成,其他磨料顆粒材料不同於氧化 鈽’詳言之為氧化鋁、二氧化矽二氧化鈦、氧化鍅、氧化 鋅及其混合物。 該等複合顆粒(A )可自例如下列文獻中瞭解w〇 2005/035688 Al ; US 6,1 10,396 ; US 6,238,469 Bl ; US 6,645,265 Bl,K. S. Choi 等人,Mat. Res. Soc. Symp· Proc. 第 671 卷,2001 Materials Research Society, M5.8.1 至 M5.8.10 ; S__H. Lee 等人,J. Mater. Res.,第 17 卷,第 10 期,(2002),第 2744 至 2749 頁;A. Jindal 等人,Journal of the Electrochemical Society, 150 (5) G314-G318 (2003) ; Z. Lu, 25 201226491
Journal of Materials Research,第 18卷,第 1〇 期,2〇〇3 年 10 月,Materials Research s〇ciety 或 s 等人,
Electrochemical and Solid-State Letters, 7 (12) G316-G318 (2004) ° 複合顆粒(A)最佳為包含選自由氧化紹、二氧化石夕二 氧化鈦氧化锆、氧化鋅及其混合物組成之群組且具有2〇 至iOOnm核心尺寸之核心的樹每型塗佈顆粒,其中該核心 經具有小於10 nm之粒徑的氧化鈽顆粒塗佈。 本發明之組成物中所用的磨料顆粒(A)之量可大範圍 變化’且因此可最有利地調節至本發明之既定組成物及方 法的特定要求。本發明之組成物較佳含有0_005至10重量 %:更佳0·01至8重量%且最佳〇.〇1至6重量%之磨料 顆粒(A ) 1¾等重量百分比以本發明之組成物的總重量計。 本發明之組成物之第二必需成分為至少一種(較佳 ^性聚合物(B)’其係選自由線性及分枝之 ) 為氣化乙稀及氧化丙烯)均聚物及共聚物組成之群組。(車乂佳 較佳之氧化乙稀·氧化丙烯共聚物⑻可為含有聚氧 ’嵌段及聚氧化丙烯嵌段之隨機共聚物 嵌段共聚物。 U物或 在該氧化乙烯·氧化丙烯嵌段共聚物中, 佳具有10 i 15之親水_親脂 、乂 能具有28至約32之则值。 W化丙稀可 水溶性聚合物(B)為慣用 水溶性聚合物( 巾售材枓。適合之 述於下列文獻中:日 26 201226491 2001-240850 A,申請專利範圍第2項以及第[0007]至[0014] 段、美國專利申請案US 2007/0077865 A1欄頁第1頁第 [0008]段至第2頁第[〇〇1〇]段、美國專利申請案US 2006/0124594 A1第3頁第[0036]段及[0037]及美國專利申 請案US 2008/0124913 A1第3頁第[0031]至[0033]段以及申 請專利範圍第14項,或其如BASF公司之公司手冊 Pluronic™ & Tetronic™ Block Copolymer Surfactants, 1996」或美國專利US 2006/0213780 A1所示,由BASF公
司及 BASF SE 以商標 PluronicTM、Tetr〇nicTM及 Basens〇lTM 銷售。 最佳使用聚乙二醇(PEG )。 水溶性聚合物(B)及本發明之組成物的濃度可大範圍變 化’且因此可最有利地調節至本發明之既定組成物及方法 的特定要求。本發明之組成物較佳含有〇 〇 〇 1至5重量%, 更佳0.005至2.5重量%,甚為更佳〇·〇075至i重量%以及 最佳0.0075至0.5重量%之水溶性聚合物(B)。 本發明之組成物含有至少一種(較佳一種)陰離子磷 酸鹽分散劑(C )。 陰離子填酸鹽分散劑(C)較佳係選自由水溶性縮合磷 酸鹽組成之群組。 水溶性縮合磷酸鹽(C)之實例為通式I之偏磷酸之鹽 類’尤其是其銨鹽、鈉鹽及鉀鹽: [M+n(P〇3)n] (I); 及通式II及III之聚磷酸鹽: 27 201226491 Μ ηΡη〇3η+1 ( II ); Μ+Η2Ρη〇3η+ι ( III ); 其中Μ為銨、鈉及鉀且下標η為2至1〇,〇〇〇。關於式 I、II及III之聚磷酸鹽,下標η較佳為2至2,000、更佳2 至300、最佳2至50、尤其2至15,例如3至8。 尤其適合之水溶性縮合磷酸鹽(C )的實例為格雷姆鹽 (Graham's salt) (NaPO3 )40.50、CalgonTM(NaPO3)15.20、庫羅 爾氏鹽(Kurrol’s salt) (NaP〇3)n (其中 n =約 5000 )及六偏 鱗酸敍、六偏填酸納及六偏破酸鉀。 本發明之組成物中之水溶性陰離子磷酸鹽分散劑(C ) 之濃度可大範圍變化,且因此可最有利地調節至本發明之 既定組成物及方法的特定要求。較佳以使得氧化鈽比陰離 子磷酸鹽分散劑(C)之重量比為10至2000(更佳20至1000) 之量使用陰離子磷酸鹽分散劑(C )。 本發明之組成物可視情況含有至少一種功能成分 (D)’其不同於成分或組分(a)、(B)及(C)。 功能成分(D )較佳係選自慣用於基於氧化鈽之CMP 漿料中之化合物之群組。此等化合物(D )之實例揭示於例 如 Υ· N. Prasad 等人,Electrochemical and Solid-State Letters, 9 (12) G337-G339 (2006) ; Hyun-Goo Kang 等人,Journal of Material Research,第 22 卷,第 3 期,2007,第 777 至 787 頁,S. Kim 等人,Journal of Colloid and Interface Science, 3 19 (2008),第 48 至 52 頁;S. V. Babu 等人,Electrochemical and Solid-State Letters, 7 (12) G327-G330 (2004) ; Jae-Dong 28 201226491
Lee 等人,Journal of the Electrochemical Society, 149 (8) G477-G481,2002 ;美國專利 US 5,738,800、US 6,042,741、 US 6,132,637 ' US 6,21 8,305 B> US 5,759,91 7 ' US 6,689,692 B1、US 6,984,588 B2、US 6,299,659 B 卜 US 6,626,968 B2、 US 6,436,835 B1、US 6,491,843 B1、US 6,544,892 B2、US 6,627,107 B2、US 6,616,514 B1 及 US 7,071,105 B2 ;美國 專利申請案 US 2002/0034875 A1、US 2006/0144824 A1、 US 2006/0207188 A1、US 2006/0216935 A1、US 2007/0077865 A1、US 2007/0175104 A1、US 2007/0191244 A1及US 2007/0218811 A1 ;及日本專利申請案jp 2005-336400 A 〇 此外’功能成分(D )選自由下列組成之群組:不同於 顆粒(D )之有機、無機及有機-無機混雜磨料顆粒;具有 下限臨界溶解溫度LCST或上限臨界溶解溫度UCST之材 料’氧化劑’鈍化劑;電荷反轉劑;具有至少3個在水性 介質中不解離的羥基之有機多元醇;或由至少一種具有至 少3個在水性介質中不解離的羥基之單體所形成之聚合 物’錯合劑或螯合劑;摩擦劑;穩定劑;流變劑;界面活 性劑,金屬陽離子及有機溶劑。 可自例如美國專利申請案US 2008/0254628 A1第4頁 第[〇〇54]段或國際巾請案WO 2GG5/G14753 A1中瞭解適合 之有機磨料顆粒(D)及其有效量,其中其揭示由三聚氛胺 及-聚氰胺何生物(諸如乙醯胍胺、苯并脈胺及二氰二胺) 組成之固體顆粒。 29 201226491 可自例如國際專利申請案WO 2005/014753 A1第12頁 第1至8灯或美國專利US 6,〇68,787第6攔第41行至第7 攔第65行中瞭解適合之無機磨料顆粒(d)及其有效量。 可自例如美國專利申請案us 2〇〇8/〇254628 ai第4頁 第[0054]段或 US 2009/0013609 A1 第 3 頁第[0047]段至第 6 頁第[0087]段中瞭解適合之有機無機混雜磨料顆粒(d)及 其有效量。 可自例如歐洲專利申請案EP 1 036 836 A1第8頁第 [0074]段及第[〇〇75]段或美國專利us 6,〇68,787第4攔第扣 订至第7欄第45行或US 7,300,601 B2第4欄第18至34 行中瞭解適合之氧化劑(D)及其有效量。較佳使用有機及 無機過氧化物,更佳使用無機過氧化物。尤其使用過氧化 氫。 可自例如美國專利US 7,300,601 B2第3攔第59行至 第4攔第9行或美國專利申請案us 2008/0254628 A1跨接 第4頁及第5頁之第[〇〇5 8]段中瞭解適合之鈍化劑(D)及 其有效量。 適合之錯合劑或螯合劑(D ),其有時亦稱為摩擦劑(參 照美國專利申請案US 2008/0254628 A1第5頁第[0061]段) 或姓刻劑(etching agent/etchant)(參照美國專利申請案US 2008/02 54628 A1第4頁第[0054]段)及其有效量可自例如 美國專利US 7,3 00,601 B2第4欄第35至48行中瞭解。尤 其最佳使用胺基酸(尤其甘胺酸)及此外含有至少一個、 較佳兩個且更佳三個一級胺基之二氰二胺及三畊,(諸如三 201226491 聚氛胺及水溶性胍胺,尤其三聚氰胺、甲醯胍胺、乙醯胍 胺及2,4-二胺基-6-乙基-l,3,5-三α井)。 可自例如美國專利US 6,068,787第8欄第4至56行中 瞭解適合之穩定劑(D )及其有效量。 可自例如美國專利申請案US 2008/0254628 Α1第5頁 第[0065]段至第6頁第[〇〇69]段中瞭解適合之流變劑(〇) 及其有效量。 可自例如國際專利申請案WO 2005/ 014753 Α1第8頁 第23行至第10頁第η行或自美國專利us 7,300,601 Β2 第5欄第4行至第6攔第8行中瞭解適合之界面活性劑(D) 及其有效量。 可自例如歐洲專利申請案ΕΡ 1 036 836 Α1第8頁第 [0076]段至第9頁第[〇〇78]段中瞭解適合之多價金屬離子 (D)及其有效量。 可自例如美國專利US 7,361,603 Β2第7欄第32至48 行或美國專利申請案US 2008/0254628 Α1第5頁第[0059] 段中暸解適合之有機溶劑(D )及其有效量。 展現下限臨界溶解溫度LCST或上限臨界溶解溫度 UCST之適合之材料(d )係描述於下列文獻中:例如H. Mori, H. Iwaya,A. Nagai 及 T. Endo 之文章,Controlled synthesis of thermoresponsive polymers derived from L-proline via RAFT polymerization, Chemical Communication, 2005, 4872-4874 ;或 D. Schmaljohann 之文章,Thermo- and pH-responsive polymers and drug delivery, Advanced Drug 31 201226491
Delivery Reviews,第 58 卷(2006),1655-1670 或美國專利 申請案 US 2002/0198328 Al、US 2004/0209095 Al、US 2004/0217009 A1、US 2006/0141254 A1、US 2007/0029198 Al、US 2007/0289875 Al、US 2008/0249210 Al、US 2008/0050435 Al 或 US 2009/0013609 Al ;美國專利 US 5,057,560 > US 5,788,82 A US 6,682,642 B2 ;國際專利申請 案 WO 01/60926 A卜 WO 2004/029160 A卜 WO 2004/0521946 Al、WO 2006/093 242 A2 或 WO 2007/012 763 Al ;歐洲專利 申請案 EP 0 583 8 14 Al、EP 1 197 587 B1 及 EP 1 942 179 Al ;或德國專利申請案DE 26 10 705中。 原則上’可使用習用於CMP領域中之任何已知電荷反 轉劑(D )。電荷反轉劑(D )較佳係選自由含有至少一個選 自由羧酸酯基、亞磺酸基、硫酸酯基及膦酸酯基組成之群 組的陰離子基團之單體化合物、寡聚化合物及聚合化合物 組成之群組。 若功能成分(D )存在,則其含量可變化。以相應
wt·%,例如至少 〇.3 wt.%。
丨至 >、一種pH調節劑或緩 (A)、(B)及(c)〇 32 201226491 可自例如歐洲專利申請案EP 1 036 836 A1第8頁第 〇〇8〇]、[0085]段及第[0〇86]段;國際專利申請案 2〇〇5/〇14753 A1第12頁第B至24行;美國專利申請案仍 2008/0254628 A1第6頁第[〇〇73]段或美國專利仍 7:300,601 B2帛5欄第33至63行中瞭解適合之pH調節劑 或緩衝劑C E )及其有效量。pH調節劑或緩衝劑(E )之實 例為氫氧化卸、氫氧化録、氫氧化四甲基敍()、硝 酸及硫酸。 右pH調節劑或緩衝劑(E )存在,則含量可變化。以 相應CMP組成物之總重量計,(E)之總量較佳不超過2〇 wt.%、更佳不超過7 wt %、最佳不超過2 wt %、尤其不超 過0.5 wt·%,例如不超過〇1 wt %。以相應組成物之總重量 什,(E )之總量較佳為至少〇 〇〇1 %、更佳至少〇 wt.%、最佳至少0·05 wt %、尤其至少〇」统%,例如至少 0.5 wt.%。 使用前述之pH調節劑(E)將本發明之組成物的pH值較 佳设定在3與1 〇之間,更佳在3肖8之間,甚至更佳在3 與7之間且最佳在5與7之間。 本發明之組成物的製備不展現任何特殊性,而是可藉 由將上述成分(A)、(B)及(C)及視情況選用之(D)及 /或(E)溶解或分散於水性介質(詳言之’去離子水)中來 進仃。為此目的,可使用習用及標準混合方法及混合設備, 諸如攪拌容器、線上溶解器、高剪切葉輪、超音波混合器、 均化器喷嘴或對流混合器。由此獲得之本發明之組成物較 33 201226491 佳可經由具有適當筛孔之過濾器過渡以便移除粗粒狀顆 粒,諸如精細分散之固體磨料顆粒(A)的聚結物或聚集物。 本發明之組成物優異地適於本發明之方法。 ^ 在本發明之方法中,使電子、機械及光學裝置(尤其 電子裝置’最佳積體電路裝置)基材材料與本發明之二成 物接觸至少一次且研磨(尤其化學及機械研磨)直至獲得 所需平坦度為止》 本發明之方法在具有由低k或超低k氧化石夕材料組成 之隔離層及多晶矽層(視情況地包含氮化矽層)之矽半導體 晶圓之CMP中展現出其特殊優勢。 適合之低k或超低k材料及製備絕緣介電層之適合方 法描述於例如美國專利申請案us 2〇〇5/〇176259 Μ第2頁 第[0025]段至第[〇〇27]段、US 2005/0014667 A1 第 1 頁第 [〇〇〇3]段、US 2005/0266683 A1 第 1 頁段落[〇〇〇3]及第 2 頁 第[0024]段或 US 2008/ 0280452 A1 第[〇〇24]段至第 段或美國專利US 7,250,391 BU i攔第49至54行或歐洲 專利申請案EP i 306 415 A2第4頁第|;003 1]段中。 ' 本發明之方法尤其適於淺溝槽隔離(STI ),其需要在 圖案化晶圓基材上優先於多晶矽選擇性地移除二氧化矽。 在此方法中,以介電材料(例如二氧化矽)過量裝填經蝕 刻之溝槽,並使用氮化矽障壁膜作為停止層研磨。在此較 佳具體實例中,在自障壁膜清除二氧化矽同時使暴露之^ 晶矽及溝槽氧化矽移除減至最少的情況下結束本發明之方 法0 34 201226491 此外,本發明之方法亦尤其適於亦存在氣化石夕 溝槽隔離(STI ),因為太路泛 ,'、'本發月之組成物展現高氧化物對 晶矽之選擇性結合適中的氧化物對氮化物之選擇性。 因此,本發明之方法展現大於50、較佳大於75及 大於_之氧化物對多晶石夕之選擇性以及大於10、較佳大 於20及最佳大於25之氮化物對多晶矽之選擇性。 氧化物對氮化物之選擇性較佳在3至ι〇之範圍内。 氮化物對多晶矽之選擇性較佳大於1〇。 本發明之方法不展現特殊性,而是可用習用於具有IC 之+導體晶圓製造中之CMP的方法及設備來進行。 如此項技藝中已知者,用於CMp之典型設備由用研磨 墊覆蓋的旋轉平台組成。晶圓安裝在载體或夾頭上,使其 上端向下面向研磨墊。載體將晶圓緊固在水平位置。此研 磨及夾持裝置之特殊佈置亦稱為硬平台設計加仏叫㈣ I㈣。載體可保留载體墊,其位於載體保留表面與未研 磨之晶圓表面之間。此墊可充當晶圓之緩衝墊。 在載體下方’一般亦水平安置較大直徑平台且呈現與 待研磨晶圓之表面平行的表面。其研磨塾在平坦化過程期 間與晶圓表面接觸。在本發明之⑽方法期間,本發明之 組成物以連,續流形 < 或以逐滴方式施用於研磨墊上。 使載體與平台均圍繞自載體及平台垂直延伸之相應軸 旋轉。旋轉之载體軸可相對於旋轉之 可相對於平台水平擺動。載體之旋轉方向典型:=! 疋)與平台之旋轉方向相同。載體及平台之旋轉速度一般 35 201226491 (但不一定)設定為不同值。 平台之溫度慣常設定為10至7〇t之間的溫度。 關於其他詳情,參考國際專利申請案WO 2004/063301 八1’詳5之第16頁第[0036]段至第18頁第[〇〇40]段以及圖 1 ° 藉由本發明之方法可獲得具有包含圖案化之低k及超 低k材料層(詳言之二氧化矽層)之1C的半導體晶圓,其 具有極佳平坦度。因此,可獲得銅鑲嵌圖案,其亦具有極 佳平坦度,且在成品中,IC具有極佳電子功能性。 比較實驗之實施例 實施例1 水性研磨組成物1至6之製備 對於水性研磨組成物1至6 雷射光散射所測定,平均粒徑
聚乙二醇(PEG10K; (pP ;氧化鈽比pp 溶解於超純水中。 之製備,將氧化鈽(如動 dso 為 120 nm 至 140 nm)、 重量平均分子量:10,000)及六偏磷酸鈉 之重量比=200,下文稱為ΡΡ2〇ο )分散或 所用量彙編於表1中。 表1 :水性研磨組成物1至6之組成 組成物編號 ---- 氧化錦重量% PEGi〇k 重量 % PP200 pH 1 (比較例) -- 0.5 ------ 5^5 36 201226491 2(比較例) 0.5 0.01 - 5.5 3 (比較例) 0.5 0.1 - 5.5 4 (比較例) 0.5 - + 6.7 5(本發明) 0.5 0.01 + 6.7 6(本發明) 0.5 0.1 + 6.7 實施例2及3以及比較實施例C1至C4 在矽半導體晶圓上之多晶矽層CMP 實施例2使用實施例1中之組成物5。實施例3使用實 施例1中之組成物6。 比較實驗C1至C4分別使用實施例1中之組成物1至 4 〇 在下文中,使用以下CMP方法參數: -研磨設備:Strasbaugh 6EGnHance (旋轉型); -平台速度:90 rpm ; -載體速度:70 rpm ; -由 Rohm & Haas 製造之 IC 1000/Suba 400 K 凹槽研磨 墊; -原位修整使用S60 3M金剛石修整器(diamond conditioner ); -漿料流速:200 ml/min ; -基材:200mm熱氧化物、PETEOS、氮化石夕及多晶矽 晶圓, 37 201226491 -下壓力:3·5 psi ( 240毫巴); -研磨時間:1分鐘。 藉由雷射干涉測量儀(FilmTek™ 2000 )在多晶矽晶圓 中心之位置(位置1)及在位置1之周圍4個位置(該等位置至 晶圓邊緣之距離相同,位置2至5)量測多晶矽材料移除率 (MRR)。 該等位置展現較高之MRR,下文稱其為「熱點」(hot spots)。 表2提供所得MRR之概述。 表2 :多晶矽材料移除率MRR之熱點顯現 實施 例、比 較實驗 編號 MRRa 位置1 (埃/分 鐘) MRRa 位置2 (埃/分 鐘) MRR 位置3 (埃/分 鐘) MRR 位置4 (埃/分 鐘) MRR 位置5 (埃/分 鐘) 熱點之 位置 範圍/ 埃 平均 MRR (埃/分 鐘) C1 519 539 525 524 535 - 20 528 C2 238 73 72 75 61 1 177 104 C3 41 47 210 45 52 3 169 79 C4 44 66 62 76 64 - 32 62 2 20 21 18 19 21 - 3 20 3 18 16 17 18 19 - 3 18 表2之結果顯而易知:當組成物僅包含氧化鈽時,多 晶矽MRR值非常高。PEG1()K之添加使平均MRR值降低。 然而,如熱點外觀所證,觀察到不均勻的多晶矽移除。 38 201226491 PEG10K濃度提高導致範圍縮減及MRR降低。添加PP200亦 造成MRR降低,可藉由PEG10K及PP200之協同作用抑制該 現象。 此外,相較於比較實驗,在實驗2及3中,吸著在晶 圓上之顆粒量顯著地較低。 實施例4及5 含有PP2GG及PEG丨GK之水性研磨組成物之選擇性 實施例4使用實施例1之水性研磨組成物5。
實施例5使用含有0.25重量%之氧化鈽及0.05重量% 之 PEG10K 及 PP 2 00之研磨組成物。 以所述之方法測定熱氧化物(TOX)、PETEOS、氮化矽 及多晶矽晶圓之MRR。所得之MRR彙編於表3中。
表3 :熱氧化物(TOX)、PETEOS、氮化矽(SiN)及多晶 矽(PSi)晶圓之MRR 實施例編號 TOX MRR (埃/分鐘) PETEOS MRR (埃/分鐘) 氮化矽 MRR (埃/分鐘) 多晶碎 MRR (埃/分鐘) 4 2471 3017 599 15 5 2074 3029 552 18 經計算之選擇性彙編於表4中。 表4 :氧化物對多晶矽(PSi)、氧化物對氮化矽(SiN)及 39 201226491 氮化物對多晶矽(SiN : PSi)之選擇性 實施例編 TOX.Psi PETEOS: PSi TOX:SiN PETEOS: SiN SiN.PSi 號 之選擇性 之選擇性 之選擇性 之選擇性 之選擇性 4 171 201 4.12 5 40 5 115 168 3.75 5.5 31 該等結果顯示該等水性研磨組成物優異地適於含有二 氧化矽、氮化矽及多晶矽層之半導體晶圓CMP。因此,氧 化物對多晶矽之選擇性特別地高,而氧化物對氮化物之選 擇性是在可避免在含有二氧化矽、氮化矽及多晶矽區域之 經全面平坦化、異質、經圖案化表面中之碟型凹陷及其他 破壞及缺陷之有利範圍内。此外,氮化物對多晶矽之選擇 性遠高於1 0。 觀察該等晶圓經CMP後是否有不想要的殘留膜形成。 然而,其並未形成不想要的殘留膜。 實施例6至9 含有0.5重量%氧化鈽、0.1重量%卩£0丨〇κ及不同PP量 之水性研磨組成物之選擇性 以所述之方法測定氧化鈽對ΡΡ之比例對熱氧化物 (TOX)、PETEOS、氮化矽及多晶矽晶圓之影響。所得之MRR 彙編於表5中。 40 201226491 "表5:氧化鈽對pp之比例對熱氧化物(tox)、pete〇s 氮化石夕(SiN)及多晶矽(psi)晶圓之影響
經計算之選擇性彙編於表6中 表6 :氧化物對多晶石々/nci .、 夕日日矽(ps丨)、氧化物對氮化物(Si 氮化物對多晶矽(SiN : pSi)之選擇性 TOX:Psi 之選擇性
PETEOS: SiN 實施例編 號 peteos? PSi 之選擇性 TOX:SiN 之選擇性 之選擇性 SiN:PSi 之選擇性
該等結果顯不可藉由改變氧化鈽對pp之比例有利地調 節MRR及選擇性。可達到特別高的氧化物對多晶矽之選擇 性以及高氮化物對多晶矽之、睡担w ^ ^ /之選擇性’而乳化物對氮化物之 選擇性維持在可避免在合含__ s ^ 有一氧化石夕、氮化石夕及多晶石夕區 域之經全面平坦化、異暂 . . , 、質、經圖案化表面中之碟型凹陷及 其他破壞及缺陷之有利範圍内。 201226491 【圖式簡單說明】 無 【主要元件符號說明】 無 42
Claims (1)
- 201226491 七、申請專利範圍: 1. 一種水性研磨組成物,該水性研磨組成物包含: (A) 至少一種類型之磨料顆粒,當其分散於不含成分 (C)且具有範圍介於3至9之?1^值的水性介質中時帶正 電’如電泳遷移率所證明; (B) 至少一種水溶性聚合物,其係選自由線性及分枝 氧化烯均聚物及共聚物所組成之群組;及 (C )至少一種陰離子磷酸鹽分散劑。 2. 根據申請專利範圍第丨項之水性研磨組成物,其特徵 在於磨料顆粒(A)含有氧化鈽或係由氧化鈽所組成。 3. 根據申請專利範圍第丨或2項之水性研磨組成物,其 特徵在於,以該研磨組成物的總重量計,其含有〇 〇〇5重 量%至1 0重量%之磨料顆粒(A )。 4. 根據申請專利範圍第1至3項中任一項之水性研磨組 成物,其特徵在於線性及分枝氧化烯均聚物及共聚物(B)係 選自由氧化乙烯及氧化丙烯之均聚物及共聚物所組成之群 組。 ’ 5. 根據申請專利範圍第4項之水性研磨組成物,其特徵 在於含有作為氧化乙烯之均聚物(B)之聚乙二醇(pEG )。 6. 根據申明專利範圍第丨至5項中任一項之水性研磨組 成物,其特徵在於陰離子磷酸鹽分散劑(c)係選自由水溶 性縮合磷酸鹽組成之群組。 7. 根據申請專利範圍第6項之水性研磨組成物,其特徵 在於水溶性縮合磷酸鹽(C)係選自由下列組成之群組: 43 201226491 通式i之偏磷酸鹽: [M+n(P〇3)n] 及通式II及III之聚磷酸鹽:(II) ; (III) ; 其中Μ為銨、鈉及鉀且下標η為2至1〇,〇〇〇。 8·根據申請專利範圍第1至7項中任一項之水性研磨組 成物’其特徵在於含有不同於成分(α)、(β)及(c)之至 少一種pH調節劑或緩衝劑(Ε)。 9·根據申請專利範圍第1至8項中任一項之水性研磨組 成物,其特徵在於含有不同於成分(A)、(B)及(c)之至少一 種功能成分(D ),其中功能成分(D )係選自由下列所組成 之群組:不同於顆粒(A )之有機、無機及有機_無機混雜 磨料顆粒、具有下限臨界溶解溫度LCST或上限臨界溶解溫 度UCST之材料、氧化劑、鈍化劑、電荷反轉劑、含有具有 至少2個在水性介質中不解離的羥基之有機多元醇、由至 少一種具有至少2個在水性介質中不解離的羥基之單體所 形成之募聚物及聚合物、錯合劑或螯合劑、摩擦劑、穩定 劑、流變劑、界面活性劑、金屬陽離子及有機溶劑。 1 0.根據申請專利範圍第1至9項中任一項之水性研磨 組成物’其特徵在於’ pH值為3至10。 U._種研磨用於電子、機械及光學裝置基材之方法, »玄方法係藉由使該基材與水性研磨組成物接觸至少一次且 研磨。玄基材材料直至達成所需平坦度為止,其特徵在於使 201226491 用如申δ青專利範圍第 物。 1至1 〇項中υ壬一 —項之水性研磨組成 12·根據申請專利範圍第u 、 基材包含至少—層含有至少一種&决,其特徵在於,該 至少-種氧化矽介電質材料組成:::介電質材料或係由 石夕或係由多晶發組成之層,以:至少—層含有多晶 大於50。 物對多晶矽之選擇性 •根據申請專利範圍第12 材材料另外包含至少一方法’其特徵在於該基 層,以及4 矽或係由氮化矽組成之 ,4 , 弹注疋在3至0的範圍内。 4·根據申請專利範圍第u 苴胜蝌产从^ 王U項中任一項之方法, :贵;。等電子裝置為積體電路裝置、液晶面板、有 機電場發光面板、印刷電路板、微型機器、眶晶片、: 型工廠及磁頭;該等機械裝置為高精度機械裝置;及該等 光學裝置為諸如光罩、透鏡及稜鏡之光學玻璃、諸如氧化 銦錫(ΙΊΌ)之無機導電膜、光學積體電路、光學交換元件、 光學波導、諸如光學纖維端面及閃爍體之光學單晶、固體 雷射單晶、用於藍色雷射LED之藍寶石基材、半導體單晶 及用於磁碟之玻璃基材。 15·根據申請專利範圍第14項之方法,其特徵在於該積 體電路裝置含有具有尺寸小於5G nm之結構、具有大規模 積體或超大規模積體之積體電路。 八、圖式: (無) 45
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- 2011-09-05 WO PCT/IB2011/053867 patent/WO2012032451A1/en active Application Filing
- 2011-09-05 KR KR1020137008876A patent/KR101906135B1/ko active IP Right Grant
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI627257B (zh) * | 2016-02-25 | 2018-06-21 | 三星Sdi股份有限公司 | 各向異性導電膜和由其連接的顯示裝置 |
TWI767355B (zh) * | 2019-10-24 | 2022-06-11 | 美商慧盛材料美國責任有限公司 | 高氧化物移除速率的淺溝隔離化學機械平坦化組合物、系統及方法 |
Also Published As
Publication number | Publication date |
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EP2428541A1 (en) | 2012-03-14 |
KR101906135B1 (ko) | 2018-10-10 |
MY175638A (en) | 2020-07-03 |
EP2428541B1 (en) | 2019-03-06 |
CN103080256A (zh) | 2013-05-01 |
WO2012032451A1 (en) | 2012-03-15 |
JP2013540849A (ja) | 2013-11-07 |
RU2573672C2 (ru) | 2016-01-27 |
CN103080256B (zh) | 2015-06-24 |
IL224645A (en) | 2017-11-30 |
SG11201606187RA (en) | 2016-09-29 |
US20130168348A1 (en) | 2013-07-04 |
SG10201606566SA (en) | 2016-09-29 |
RU2013115237A (ru) | 2014-10-20 |
KR20130102587A (ko) | 2013-09-17 |
JP5965906B2 (ja) | 2016-08-10 |
TWI525164B (zh) | 2016-03-11 |
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