TW201222768A - Integrated passives and power amplifier - Google Patents
Integrated passives and power amplifier Download PDFInfo
- Publication number
- TW201222768A TW201222768A TW100134206A TW100134206A TW201222768A TW 201222768 A TW201222768 A TW 201222768A TW 100134206 A TW100134206 A TW 100134206A TW 100134206 A TW100134206 A TW 100134206A TW 201222768 A TW201222768 A TW 201222768A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- power
- vias
- power amplifier
- circuit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/20—Inductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/69—Insulating materials thereof
- H10W70/692—Ceramics or glasses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistors, capacitors or inductors
- H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistors, capacitors or inductors incorporating printed capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistors, capacitors or inductors
- H05K1/165—Printed circuits incorporating printed electric components, e.g. printed resistors, capacitors or inductors incorporating printed inductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
- H05K3/4605—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated made from inorganic insulating material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
- H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
- H10W44/234—Arrangements for impedance matching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/016—Manufacture or treatment using moulds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
- H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38591310P | 2010-09-23 | 2010-09-23 | |
| US13/235,158 US8970516B2 (en) | 2010-09-23 | 2011-09-16 | Integrated passives and power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201222768A true TW201222768A (en) | 2012-06-01 |
Family
ID=44801143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100134206A TW201222768A (en) | 2010-09-23 | 2011-09-22 | Integrated passives and power amplifier |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8970516B2 (enExample) |
| EP (1) | EP2619791B1 (enExample) |
| JP (1) | JP5746352B2 (enExample) |
| CN (1) | CN103119703B (enExample) |
| TW (1) | TW201222768A (enExample) |
| WO (1) | WO2012040063A1 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI477811B (zh) * | 2012-08-31 | 2015-03-21 | Qualcomm Mems Technologies Inc | 機電系統裝置 |
| US20230139615A1 (en) * | 2020-04-17 | 2023-05-04 | Nippon Telegraph And Telephone Corporation | Optical Semiconductor Chip |
| US11955417B2 (en) | 2021-12-14 | 2024-04-09 | Industrial Technology Research Institute | Electronic device having substrate with electrically floating vias |
| TWI876678B (zh) * | 2023-09-26 | 2025-03-11 | 台灣積體電路製造股份有限公司 | 半導體封裝件及其製造方法 |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9069421B2 (en) | 2010-12-16 | 2015-06-30 | Hung-Ta LIU | Touch sensor and touch display apparatus and driving method thereof |
| US8941607B2 (en) * | 2010-12-16 | 2015-01-27 | Hung-Ta LIU | MEMS display with touch control function |
| US8519506B2 (en) * | 2011-06-28 | 2013-08-27 | National Semiconductor Corporation | Thermally conductive substrate for galvanic isolation |
| US9046976B2 (en) * | 2011-09-28 | 2015-06-02 | Hung-Ta LIU | Method for transmitting and detecting touch sensing signals and touch device using the same |
| US10115671B2 (en) | 2012-08-03 | 2018-10-30 | Snaptrack, Inc. | Incorporation of passives and fine pitch through via for package on package |
| US20140035935A1 (en) * | 2012-08-03 | 2014-02-06 | Qualcomm Mems Technologies, Inc. | Passives via bar |
| US9035194B2 (en) * | 2012-10-30 | 2015-05-19 | Intel Corporation | Circuit board with integrated passive devices |
| US9431473B2 (en) | 2012-11-21 | 2016-08-30 | Qualcomm Incorporated | Hybrid transformer structure on semiconductor devices |
| US20140144681A1 (en) * | 2012-11-27 | 2014-05-29 | Qualcomm Mems Technologies, Inc. | Adhesive metal nitride on glass and related methods |
| US20140167900A1 (en) | 2012-12-14 | 2014-06-19 | Gregorio R. Murtagian | Surface-mount inductor structures for forming one or more inductors with substrate traces |
| US9059269B2 (en) | 2013-01-10 | 2015-06-16 | International Business Machines Corporation | Silicon-on-insulator heat sink |
| US9203373B2 (en) | 2013-01-11 | 2015-12-01 | Qualcomm Incorporated | Diplexer design using through glass via technology |
| US10002700B2 (en) | 2013-02-27 | 2018-06-19 | Qualcomm Incorporated | Vertical-coupling transformer with an air-gap structure |
| US9634645B2 (en) | 2013-03-14 | 2017-04-25 | Qualcomm Incorporated | Integration of a replica circuit and a transformer above a dielectric substrate |
| US9935166B2 (en) | 2013-03-15 | 2018-04-03 | Qualcomm Incorporated | Capacitor with a dielectric between a via and a plate of the capacitor |
| US9634640B2 (en) | 2013-05-06 | 2017-04-25 | Qualcomm Incorporated | Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) and related components and methods |
| US9264013B2 (en) | 2013-06-04 | 2016-02-16 | Qualcomm Incorporated | Systems for reducing magnetic coupling in integrated circuits (ICS), and related components and methods |
| US20150035162A1 (en) * | 2013-08-02 | 2015-02-05 | Qualcomm Incorporated | Inductive device that includes conductive via and metal layer |
| US9449753B2 (en) | 2013-08-30 | 2016-09-20 | Qualcomm Incorporated | Varying thickness inductor |
| US10317767B2 (en) * | 2014-02-07 | 2019-06-11 | E Ink Corporation | Electro-optic display backplane structure with drive components and pixel electrodes on opposed surfaces |
| US20150237732A1 (en) * | 2014-02-18 | 2015-08-20 | Qualcomm Incorporated | Low-profile package with passive device |
| CN103904039B (zh) * | 2014-03-31 | 2016-07-06 | 华进半导体封装先导技术研发中心有限公司 | 超薄凹式玻璃基板的封装结构及方法 |
| US9906318B2 (en) | 2014-04-18 | 2018-02-27 | Qualcomm Incorporated | Frequency multiplexer |
| CN104009014B (zh) * | 2014-04-26 | 2017-04-12 | 华进半导体封装先导技术研发中心有限公司 | 集成无源器件晶圆级封装三维堆叠结构及制作方法 |
| KR101712928B1 (ko) | 2014-11-12 | 2017-03-09 | 삼성전자주식회사 | 반도체 패키지 |
| CN105575959B (zh) * | 2014-11-21 | 2018-06-15 | 威盛电子股份有限公司 | 集成电路装置 |
| US9741691B2 (en) * | 2015-04-29 | 2017-08-22 | Qualcomm Incorporated | Power delivery network (PDN) design for monolithic three-dimensional (3-D) integrated circuit (IC) |
| JP2016219683A (ja) * | 2015-05-25 | 2016-12-22 | ソニー株式会社 | 配線基板、および製造方法 |
| JP6657609B2 (ja) | 2015-06-12 | 2020-03-04 | 凸版印刷株式会社 | 配線回路基板、半導体装置、配線回路基板の製造方法および半導体装置の製造方法 |
| US9939596B2 (en) * | 2015-10-29 | 2018-04-10 | Samsung Electronics Co., Ltd. | Optical integrated circuit package |
| US9654060B1 (en) | 2015-11-13 | 2017-05-16 | International Business Machines Corporation | Signal amplification using a reference plane with alternating impedance |
| CN108369939B (zh) * | 2015-12-22 | 2022-07-01 | 英特尔公司 | 具有电磁干扰屏蔽的半导体封装 |
| US9780755B1 (en) * | 2016-09-16 | 2017-10-03 | Apple Inc. | On flex circuit desense filter for wireless communications |
| CN106298704B (zh) * | 2016-10-11 | 2018-05-29 | 中国科学院地质与地球物理研究所 | 一种带热沉和磁屏蔽的mems封装及其制备方法 |
| US10411658B2 (en) | 2016-12-14 | 2019-09-10 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN107799360A (zh) * | 2017-09-27 | 2018-03-13 | 东南大学 | 一种集成式无源无线微机械开关及其制备方法 |
| KR102487611B1 (ko) | 2017-10-27 | 2023-01-11 | 코닝 인코포레이티드 | 보호 물질을 사용한 관통 유리 비아 제조방법 |
| CN107959109A (zh) * | 2017-11-05 | 2018-04-24 | 中国电子科技集团公司第五十五研究所 | 硅基一体化集成高增益天线及天线阵列 |
| CN108336042A (zh) * | 2017-12-26 | 2018-07-27 | 上海矽润科技有限公司 | 一种三维叠层芯片SiP封装 |
| TWI659839B (zh) * | 2018-03-30 | 2019-05-21 | Uniflex Technology Inc. | 用於顯示器的封裝結構 |
| CN108566248B (zh) * | 2018-05-02 | 2021-01-26 | 京东方科技集团股份有限公司 | 一种光信息影像化组件、制作方法及显示装置 |
| US11196394B2 (en) | 2018-08-10 | 2021-12-07 | Murata Manufacturing Co., Ltd. | Power amplifier module |
| JP2020028108A (ja) | 2018-08-10 | 2020-02-20 | 株式会社村田製作所 | 電力増幅モジュール |
| US10969416B2 (en) * | 2018-12-13 | 2021-04-06 | Silicon Laboratories Inc. | System and method of duplicate circuit block swapping for noise reduction |
| KR102905973B1 (ko) | 2019-07-22 | 2025-12-29 | 삼성전자 주식회사 | 반도체 패키지 |
| TWI742935B (zh) * | 2019-12-20 | 2021-10-11 | 日商村田製作所股份有限公司 | 功率放大模組 |
| US11177065B2 (en) * | 2020-03-30 | 2021-11-16 | Qualcomm Incorporated | Thermal paths for glass substrates |
| CN112000151B (zh) * | 2020-09-11 | 2022-01-28 | 山特电子(深圳)有限公司 | 用于滤波器电容组的温度保护装置 |
| KR20230056086A (ko) | 2021-10-19 | 2023-04-27 | 삼성전자주식회사 | 반도체 패키지 |
| CN114006598B (zh) * | 2021-10-29 | 2025-08-26 | 北京航天微电科技有限公司 | 一种薄膜体声波谐振器、制备方法和薄膜体声波滤波器 |
| EP4454420A1 (en) * | 2021-12-22 | 2024-10-30 | Telefonaktiebolaget LM Ericsson (publ) | Thermal interconnect for integrated circuitry |
| CN117461258A (zh) * | 2022-05-25 | 2024-01-26 | 京东方科技集团股份有限公司 | 滤波器及其制作方法、电子设备 |
| US20240006347A1 (en) * | 2022-06-29 | 2024-01-04 | Intel Corporation | Passive circuit on a back-end-of-line of a package |
| US20250226365A1 (en) * | 2024-01-08 | 2025-07-10 | Qualcomm Incorporated | Integrated circuit device including impedance adapter |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100677005B1 (ko) | 1996-10-31 | 2007-01-31 | 라미나 세라믹스, 인크. | 전자 집적 회로 |
| JPH11186432A (ja) * | 1997-12-25 | 1999-07-09 | Canon Inc | 半導体パッケージ及びその製造方法 |
| US6462950B1 (en) | 2000-11-29 | 2002-10-08 | Nokia Mobile Phones Ltd. | Stacked power amplifier module |
| US7061102B2 (en) * | 2001-06-11 | 2006-06-13 | Xilinx, Inc. | High performance flipchip package that incorporates heat removal with minimal thermal mismatch |
| JPWO2003007370A1 (ja) | 2001-07-12 | 2004-11-04 | 株式会社日立製作所 | 配線ガラス基板およびその製造方法ならびに配線ガラス基板に用いられる導電性ペーストおよび半導体モジュールならびに配線基板および導体形成方法 |
| US6873529B2 (en) | 2002-02-26 | 2005-03-29 | Kyocera Corporation | High frequency module |
| US7668415B2 (en) * | 2004-09-27 | 2010-02-23 | Qualcomm Mems Technologies, Inc. | Method and device for providing electronic circuitry on a backplate |
| JP2006179564A (ja) | 2004-12-21 | 2006-07-06 | Nec Corp | 半導体接続基板、半導体装置、半導体デバイス及び半導体基板並びに半導体接続基板の製造方法 |
| CN101189921A (zh) * | 2005-06-01 | 2008-05-28 | 松下电器产业株式会社 | 电路基板和其制造方法以及使用该电路基板的电子部件 |
| US7288995B2 (en) * | 2005-06-15 | 2007-10-30 | Nokia Corporation | Power amplifier of a transmitter |
| JP2007073849A (ja) | 2005-09-08 | 2007-03-22 | Sharp Corp | 電子回路モジュールとその製造方法 |
| JP2008098285A (ja) | 2006-10-10 | 2008-04-24 | Rohm Co Ltd | 半導体装置 |
| JP4906496B2 (ja) | 2006-12-25 | 2012-03-28 | 新光電気工業株式会社 | 半導体パッケージ |
| CN101589468A (zh) | 2007-01-17 | 2009-11-25 | Nxp股份有限公司 | 具有通过衬底的通路孔的系统级封装 |
| JP2009135204A (ja) * | 2007-11-29 | 2009-06-18 | Nec Electronics Corp | システムインパッケージ |
| US8068710B2 (en) | 2007-12-07 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | Decoupled holographic film and diffuser |
| US7746174B2 (en) | 2008-06-12 | 2010-06-29 | Samsung Electro-Mechanics Company, Ltd. | Systems and methods for power amplifier with integrated passive device |
-
2011
- 2011-09-16 US US13/235,158 patent/US8970516B2/en active Active
- 2011-09-16 EP EP11770223.3A patent/EP2619791B1/en not_active Not-in-force
- 2011-09-16 WO PCT/US2011/052017 patent/WO2012040063A1/en not_active Ceased
- 2011-09-16 CN CN201180045796.7A patent/CN103119703B/zh not_active Expired - Fee Related
- 2011-09-16 JP JP2013530204A patent/JP5746352B2/ja not_active Expired - Fee Related
- 2011-09-22 TW TW100134206A patent/TW201222768A/zh unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI477811B (zh) * | 2012-08-31 | 2015-03-21 | Qualcomm Mems Technologies Inc | 機電系統裝置 |
| US20230139615A1 (en) * | 2020-04-17 | 2023-05-04 | Nippon Telegraph And Telephone Corporation | Optical Semiconductor Chip |
| US12341315B2 (en) * | 2020-04-17 | 2025-06-24 | Nippon Telegraph And Telephone Corporation | Optical semiconductor chip |
| US11955417B2 (en) | 2021-12-14 | 2024-04-09 | Industrial Technology Research Institute | Electronic device having substrate with electrically floating vias |
| TWI876678B (zh) * | 2023-09-26 | 2025-03-11 | 台灣積體電路製造股份有限公司 | 半導體封裝件及其製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103119703A (zh) | 2013-05-22 |
| WO2012040063A1 (en) | 2012-03-29 |
| JP5746352B2 (ja) | 2015-07-08 |
| US20120075216A1 (en) | 2012-03-29 |
| CN103119703B (zh) | 2016-01-20 |
| US8970516B2 (en) | 2015-03-03 |
| JP2013538010A (ja) | 2013-10-07 |
| EP2619791B1 (en) | 2015-10-21 |
| EP2619791A1 (en) | 2013-07-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201222768A (en) | Integrated passives and power amplifier | |
| JP6099663B2 (ja) | 圧電導電性誘電体膜を備えたマイクロスピーカー | |
| KR101480807B1 (ko) | 리세스 및 전자 컴포넌트를 가진 백플레이트 | |
| US20140247269A1 (en) | High density, low loss 3-d through-glass inductor with magnetic core | |
| JP2015531998A (ja) | 特別なビア実装形態を有する複雑な受動設計 | |
| KR20140057639A (ko) | 글라스상에 제조된 압전 마이크로폰 | |
| TW201323316A (zh) | 以玻璃作為基板材料以及用於微機電系統及積體電路裝置之最終封裝 | |
| KR20140057640A (ko) | 글라스상에 제조된 압전 마이크로폰 | |
| JP6261656B2 (ja) | 一過性モード電磁波キャビティ共振器のための面内共振器構造 | |
| TW201318112A (zh) | 以玻璃作為基板材料以及用於微機電系統及積體電路裝置之最終封裝 | |
| TW201328962A (zh) | 以玻璃作為基板材料以及用於微機電系統及積體電路裝置之最終封裝 | |
| TW201246477A (en) | Thin film through-glass via and methods for forming same | |
| CN104395812A (zh) | 薄膜开关装置与机电系统装置的集成 | |
| US9045332B2 (en) | Thin back glass interconnect | |
| TW201232678A (en) | Flexible integrated circuit device layers and processes | |
| KR20140130493A (ko) | 전기기계 시스템 디바이스 | |
| CN110228785A (zh) | 用于通孔结构的系统、方法及设备 | |
| TW201329602A (zh) | 機電系統可變電容器件 | |
| TW201333530A (zh) | 機電系統可變電容裝置 |