CN103119703B - 集成的无源器件和功率放大器 - Google Patents

集成的无源器件和功率放大器 Download PDF

Info

Publication number
CN103119703B
CN103119703B CN201180045796.7A CN201180045796A CN103119703B CN 103119703 B CN103119703 B CN 103119703B CN 201180045796 A CN201180045796 A CN 201180045796A CN 103119703 B CN103119703 B CN 103119703B
Authority
CN
China
Prior art keywords
power
glass substrate
vias
power amplifier
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180045796.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN103119703A (zh
Inventor
J·P·布莱克
R·V·夏诺伊
E·P·格瑟夫
A·哈德吉克里斯托
T·A·迈尔斯
J·金
M·F·维伦茨
J-H·J·兰
C·S·罗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Qualcomm MEMS Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm MEMS Technologies Inc filed Critical Qualcomm MEMS Technologies Inc
Publication of CN103119703A publication Critical patent/CN103119703A/zh
Application granted granted Critical
Publication of CN103119703B publication Critical patent/CN103119703B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/165—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed inductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
    • H05K3/4605—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated made from inorganic insulating material

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Micromachines (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
CN201180045796.7A 2010-09-23 2011-09-16 集成的无源器件和功率放大器 Expired - Fee Related CN103119703B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US38591310P 2010-09-23 2010-09-23
US61/385,913 2010-09-23
PCT/US2011/052017 WO2012040063A1 (en) 2010-09-23 2011-09-16 Integrated passives and power amplifier

Publications (2)

Publication Number Publication Date
CN103119703A CN103119703A (zh) 2013-05-22
CN103119703B true CN103119703B (zh) 2016-01-20

Family

ID=44801143

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180045796.7A Expired - Fee Related CN103119703B (zh) 2010-09-23 2011-09-16 集成的无源器件和功率放大器

Country Status (6)

Country Link
US (1) US8970516B2 (enExample)
EP (1) EP2619791B1 (enExample)
JP (1) JP5746352B2 (enExample)
CN (1) CN103119703B (enExample)
TW (1) TW201222768A (enExample)
WO (1) WO2012040063A1 (enExample)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9069421B2 (en) 2010-12-16 2015-06-30 Hung-Ta LIU Touch sensor and touch display apparatus and driving method thereof
US8941607B2 (en) * 2010-12-16 2015-01-27 Hung-Ta LIU MEMS display with touch control function
US8519506B2 (en) * 2011-06-28 2013-08-27 National Semiconductor Corporation Thermally conductive substrate for galvanic isolation
US9046976B2 (en) * 2011-09-28 2015-06-02 Hung-Ta LIU Method for transmitting and detecting touch sensing signals and touch device using the same
US20140035935A1 (en) * 2012-08-03 2014-02-06 Qualcomm Mems Technologies, Inc. Passives via bar
US10115671B2 (en) 2012-08-03 2018-10-30 Snaptrack, Inc. Incorporation of passives and fine pitch through via for package on package
US20140063022A1 (en) * 2012-08-31 2014-03-06 Qualcomm Mems Technologies, Inc. Electromechanical systems device
US9035194B2 (en) * 2012-10-30 2015-05-19 Intel Corporation Circuit board with integrated passive devices
US9431473B2 (en) 2012-11-21 2016-08-30 Qualcomm Incorporated Hybrid transformer structure on semiconductor devices
US20140144681A1 (en) * 2012-11-27 2014-05-29 Qualcomm Mems Technologies, Inc. Adhesive metal nitride on glass and related methods
US20140167900A1 (en) 2012-12-14 2014-06-19 Gregorio R. Murtagian Surface-mount inductor structures for forming one or more inductors with substrate traces
US9059269B2 (en) 2013-01-10 2015-06-16 International Business Machines Corporation Silicon-on-insulator heat sink
US9203373B2 (en) 2013-01-11 2015-12-01 Qualcomm Incorporated Diplexer design using through glass via technology
US10002700B2 (en) 2013-02-27 2018-06-19 Qualcomm Incorporated Vertical-coupling transformer with an air-gap structure
US9634645B2 (en) 2013-03-14 2017-04-25 Qualcomm Incorporated Integration of a replica circuit and a transformer above a dielectric substrate
US9935166B2 (en) * 2013-03-15 2018-04-03 Qualcomm Incorporated Capacitor with a dielectric between a via and a plate of the capacitor
US9634640B2 (en) 2013-05-06 2017-04-25 Qualcomm Incorporated Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) and related components and methods
US9264013B2 (en) 2013-06-04 2016-02-16 Qualcomm Incorporated Systems for reducing magnetic coupling in integrated circuits (ICS), and related components and methods
US20150035162A1 (en) * 2013-08-02 2015-02-05 Qualcomm Incorporated Inductive device that includes conductive via and metal layer
US9449753B2 (en) 2013-08-30 2016-09-20 Qualcomm Incorporated Varying thickness inductor
US10317767B2 (en) * 2014-02-07 2019-06-11 E Ink Corporation Electro-optic display backplane structure with drive components and pixel electrodes on opposed surfaces
US20150237732A1 (en) * 2014-02-18 2015-08-20 Qualcomm Incorporated Low-profile package with passive device
CN103904039B (zh) * 2014-03-31 2016-07-06 华进半导体封装先导技术研发中心有限公司 超薄凹式玻璃基板的封装结构及方法
US9906318B2 (en) 2014-04-18 2018-02-27 Qualcomm Incorporated Frequency multiplexer
CN104009014B (zh) * 2014-04-26 2017-04-12 华进半导体封装先导技术研发中心有限公司 集成无源器件晶圆级封装三维堆叠结构及制作方法
KR101712928B1 (ko) 2014-11-12 2017-03-09 삼성전자주식회사 반도체 패키지
CN107658288B (zh) * 2014-11-21 2020-02-07 威锋电子股份有限公司 集成电路装置
US9741691B2 (en) * 2015-04-29 2017-08-22 Qualcomm Incorporated Power delivery network (PDN) design for monolithic three-dimensional (3-D) integrated circuit (IC)
JP2016219683A (ja) 2015-05-25 2016-12-22 ソニー株式会社 配線基板、および製造方法
JP6657609B2 (ja) 2015-06-12 2020-03-04 凸版印刷株式会社 配線回路基板、半導体装置、配線回路基板の製造方法および半導体装置の製造方法
US9939596B2 (en) * 2015-10-29 2018-04-10 Samsung Electronics Co., Ltd. Optical integrated circuit package
US9654060B1 (en) 2015-11-13 2017-05-16 International Business Machines Corporation Signal amplification using a reference plane with alternating impedance
US10461007B2 (en) * 2015-12-22 2019-10-29 Intel Corporation Semiconductor package with electromagnetic interference shielding
US9780755B1 (en) * 2016-09-16 2017-10-03 Apple Inc. On flex circuit desense filter for wireless communications
CN106298704B (zh) * 2016-10-11 2018-05-29 中国科学院地质与地球物理研究所 一种带热沉和磁屏蔽的mems封装及其制备方法
US10411658B2 (en) 2016-12-14 2019-09-10 Kabushiki Kaisha Toshiba Semiconductor device
CN107799360A (zh) * 2017-09-27 2018-03-13 东南大学 一种集成式无源无线微机械开关及其制备方法
KR102487611B1 (ko) 2017-10-27 2023-01-11 코닝 인코포레이티드 보호 물질을 사용한 관통 유리 비아 제조방법
CN107959109A (zh) * 2017-11-05 2018-04-24 中国电子科技集团公司第五十五研究所 硅基一体化集成高增益天线及天线阵列
CN108336042A (zh) * 2017-12-26 2018-07-27 上海矽润科技有限公司 一种三维叠层芯片SiP封装
TWI659839B (zh) * 2018-03-30 2019-05-21 Uniflex Technology Inc. 用於顯示器的封裝結構
CN108566248B (zh) * 2018-05-02 2021-01-26 京东方科技集团股份有限公司 一种光信息影像化组件、制作方法及显示装置
JP2020028108A (ja) 2018-08-10 2020-02-20 株式会社村田製作所 電力増幅モジュール
US11196394B2 (en) 2018-08-10 2021-12-07 Murata Manufacturing Co., Ltd. Power amplifier module
US10969416B2 (en) * 2018-12-13 2021-04-06 Silicon Laboratories Inc. System and method of duplicate circuit block swapping for noise reduction
KR20210011279A (ko) 2019-07-22 2021-02-01 삼성전자주식회사 반도체 패키지
TWI742935B (zh) * 2019-12-20 2021-10-11 日商村田製作所股份有限公司 功率放大模組
US11177065B2 (en) * 2020-03-30 2021-11-16 Qualcomm Incorporated Thermal paths for glass substrates
WO2021210177A1 (ja) * 2020-04-17 2021-10-21 日本電信電話株式会社 光半導体チップ
CN112000151B (zh) * 2020-09-11 2022-01-28 山特电子（深圳）有限公司 用于滤波器电容组的温度保护装置
KR20230056086A (ko) 2021-10-19 2023-04-27 삼성전자주식회사 반도체 패키지
CN114006598B (zh) * 2021-10-29 2025-08-26 北京航天微电科技有限公司 一种薄膜体声波谐振器、制备方法和薄膜体声波滤波器
US11955417B2 (en) 2021-12-14 2024-04-09 Industrial Technology Research Institute Electronic device having substrate with electrically floating vias
EP4454420A1 (en) * 2021-12-22 2024-10-30 Telefonaktiebolaget LM Ericsson (publ) Thermal interconnect for integrated circuitry
WO2023225905A1 (zh) * 2022-05-25 2023-11-30 京东方科技集团股份有限公司 滤波器及其制作方法、电子设备
US20240006347A1 (en) * 2022-06-29 2024-01-04 Intel Corporation Passive circuit on a back-end-of-line of a package
US20250105169A1 (en) * 2023-09-26 2025-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package and manufacturing method thereof
US20250226365A1 (en) * 2024-01-08 2025-07-10 Qualcomm Incorporated Integrated circuit device including impedance adapter

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020064029A1 (en) * 2000-11-29 2002-05-30 Nokia Mobile Phones Ltd. Stacked power amplifier module
US20060284685A1 (en) * 2005-06-15 2006-12-21 Nokia Corporation Power amplifier of a transmitter
CN101447475A (zh) * 2007-11-29 2009-06-03 恩益禧电子股份有限公司 系统级封装
WO2009076075A1 (en) * 2007-12-07 2009-06-18 Qualcomm Mems Technologies, Inc. Decoupled holographic film and diffuser
US20090309662A1 (en) * 2008-06-12 2009-12-17 Ki Seok Yang Systems and Methods for Power Amplifier with Integrated Passive Device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5929510A (en) 1996-10-31 1999-07-27 Sarnoff Corporation Integrated electronic circuit
JPH11186432A (ja) * 1997-12-25 1999-07-09 Canon Inc 半導体パッケージ及びその製造方法
US7061102B2 (en) * 2001-06-11 2006-06-13 Xilinx, Inc. High performance flipchip package that incorporates heat removal with minimal thermal mismatch
TWI224382B (en) 2001-07-12 2004-11-21 Hitachi Ltd Wiring glass substrate and manufacturing method thereof, conductive paste and semiconductor module used for the same, and conductor forming method
US6873529B2 (en) 2002-02-26 2005-03-29 Kyocera Corporation High frequency module
US7668415B2 (en) * 2004-09-27 2010-02-23 Qualcomm Mems Technologies, Inc. Method and device for providing electronic circuitry on a backplate
JP2006179564A (ja) * 2004-12-21 2006-07-06 Nec Corp 半導体接続基板、半導体装置、半導体デバイス及び半導体基板並びに半導体接続基板の製造方法
WO2006129354A1 (ja) 2005-06-01 2006-12-07 Matsushita Electric Industrial Co., Ltd. 回路基板とその製造方法及びこれを用いた電子部品
JP2007073849A (ja) 2005-09-08 2007-03-22 Sharp Corp 電子回路モジュールとその製造方法
JP2008098285A (ja) * 2006-10-10 2008-04-24 Rohm Co Ltd 半導体装置
JP4906496B2 (ja) * 2006-12-25 2012-03-28 新光電気工業株式会社 半導体パッケージ
WO2008087578A2 (en) 2007-01-17 2008-07-24 Nxp B.V. A system-in-package with through substrate via holes

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020064029A1 (en) * 2000-11-29 2002-05-30 Nokia Mobile Phones Ltd. Stacked power amplifier module
US20060284685A1 (en) * 2005-06-15 2006-12-21 Nokia Corporation Power amplifier of a transmitter
CN101447475A (zh) * 2007-11-29 2009-06-03 恩益禧电子股份有限公司 系统级封装
WO2009076075A1 (en) * 2007-12-07 2009-06-18 Qualcomm Mems Technologies, Inc. Decoupled holographic film and diffuser
US20090309662A1 (en) * 2008-06-12 2009-12-17 Ki Seok Yang Systems and Methods for Power Amplifier with Integrated Passive Device

Also Published As

Publication number Publication date
WO2012040063A1 (en) 2012-03-29
JP2013538010A (ja) 2013-10-07
JP5746352B2 (ja) 2015-07-08
CN103119703A (zh) 2013-05-22
US8970516B2 (en) 2015-03-03
US20120075216A1 (en) 2012-03-29
EP2619791B1 (en) 2015-10-21
TW201222768A (en) 2012-06-01
EP2619791A1 (en) 2013-07-31

Similar Documents

Publication Publication Date Title
CN103119703B (zh) 集成的无源器件和功率放大器
JP6214654B2 (ja) 集積受動デバイス及び集積受動デバイスを製造する方法
US9363902B2 (en) Three-dimensional multilayer solenoid transformer
KR101480807B1 (ko) 리세스 및 전자 컴포넌트를 가진 백플레이트
US20140104288A1 (en) Through substrate via inductors
CN104335416B (zh) 用于渐逝模式电磁波空腔谐振器的平面内谐振器结构
CN104411620A (zh) 透明衬底中的透明穿透玻璃导电通孔
WO2013066824A1 (en) Encapsulation of ems devices on glass
US20130278359A1 (en) Two- and three-substrate level processes for producing evanescent mode electromagnetic wave cavity resonators
CN103958395B (zh) 薄背面玻璃互连件
CN104145202B (zh) 机电系统装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20161026

Address after: California, USA

Patentee after: EPCOS AG

Address before: California, USA

Patentee before: QUALCOMM MEMS TECHNOLOGIES, Inc.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160120

Termination date: 20210916