CN106298704B - 一种带热沉和磁屏蔽的mems封装及其制备方法 - Google Patents
一种带热沉和磁屏蔽的mems封装及其制备方法 Download PDFInfo
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KR102520038B1 (ko) | 2018-01-10 | 2023-04-12 | 삼성전자주식회사 | 가스 센서 패키지 및 이를 포함하는 센싱 장치 |
CN108966624B (zh) * | 2018-08-29 | 2023-10-10 | 本源量子计算科技(合肥)股份有限公司 | 一种量子芯片封装装置 |
CN109292727A (zh) * | 2018-11-13 | 2019-02-01 | 北方电子研究院安徽有限公司 | 一种具有温度补偿功能的两片式mems陀螺仪 |
CN113387319B (zh) * | 2021-06-11 | 2023-07-14 | 中国兵器工业集团第二一四研究所苏州研发中心 | 基于多通孔硅基板的mems芯片封装结构及其制备方法 |
CN113443601A (zh) * | 2021-07-16 | 2021-09-28 | 湖南天羿领航科技有限公司 | 一种mems惯性传感器芯片模组及其制备方法 |
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CN103119703A (zh) * | 2010-09-23 | 2013-05-22 | 高通Mems科技公司 | 集成的无源器件和功率放大器 |
CN104716122A (zh) * | 2013-12-13 | 2015-06-17 | 英飞凌科技股份有限公司 | 具有集成的微波组件的半导体封装件 |
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US20130082365A1 (en) * | 2011-10-03 | 2013-04-04 | International Business Machines Corporation | Interposer for ESD, EMI, and EMC |
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CN103119703A (zh) * | 2010-09-23 | 2013-05-22 | 高通Mems科技公司 | 集成的无源器件和功率放大器 |
CN104716122A (zh) * | 2013-12-13 | 2015-06-17 | 英飞凌科技股份有限公司 | 具有集成的微波组件的半导体封装件 |
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