TW201215504A - Resin film sheet comprising conductive particle and electronic component electrically connected by the same - Google Patents

Resin film sheet comprising conductive particle and electronic component electrically connected by the same Download PDF

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Publication number
TW201215504A
TW201215504A TW100142306A TW100142306A TW201215504A TW 201215504 A TW201215504 A TW 201215504A TW 100142306 A TW100142306 A TW 100142306A TW 100142306 A TW100142306 A TW 100142306A TW 201215504 A TW201215504 A TW 201215504A
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Taiwan
Prior art keywords
resin film
layer
resin
particles
thickness
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TW100142306A
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Chinese (zh)
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TWI396626B (en
Inventor
Tsutomu Kono
Koji Kobayashi
Kazuyoshi Kojima
Masayuki Mino
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Hitachi Chemical Co Ltd
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Publication of TWI396626B publication Critical patent/TWI396626B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)
  • Conductive Materials (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

A resin film sheet with a conductive particle and the electronic component being electrically connected by the resin film sheet are provided to improve a conductive performance and reduce costs by improving the particle capture ratio of a conductive resin film sheet. A resin film sheet includes a resin film layer with a conductive particle(1) and an insulating resin film layer containing a mica. Over two resin film sheet layers are laminated to the direction of a thickness. The thermal conductivity of the insulating resin film layer is lower than the thermal conductivity of the resin of the resin film layer with the conductive particle.

Description

201215504 六、發明說明 【發明所屬之技術領域】 本發明係關於內含導電性粒子之樹脂膜片及以內含導 電性粒子之樹脂膜片進行電連接之電子零件。 在內含具有導電性粒子之樹脂膜材料將電極間連接成 形之前階段中，以夾住內含粒子之樹脂膜材料的狀態，使 電極彼此間的間隔爲分開超過薄膜的厚度，一邊由上方電 極或下方電極對樹脂膜材料加熱，一邊以縮短電極間隔之 壓縮予以連接成形，使內含具有導電性之粒子的樹脂膜材 料流動，並且於連接成形後實施粒子被夾於電極間的步驟 〇 本發明係關於提高連接成形後之電極間的粒子捕捉率 (連接成形前之電極間存在之粒子數與連接成形後之電極 間夾住之粒子數的比率）之內含導電性粒子的樹脂膜片及 以上述樹脂膜片進行電連接的電子零件。 【先前技術】 關於異向導電性膜之材料構成的專利文獻，例如，已 知專利文獻1、專利文獻2、專利文獻3。於專利文獻1中 ，揭示關於內含導電性粒子之樹脂膜片的厚度尺寸與粒徑 比率的技術，且示出異向導電膜全體厚度爲粒徑之2倍以 內的材料構成。但是，於實際之連接中，各電極形狀於連 接、接黏所必要之異向導電膜全體厚度爲不同。 又，於專利文獻2中，揭示將異向導電漿料中分散的 -5- 201215504 導電物質密度，於厚度方向變更的技術，示出爲了使導電 物質的密度於厚度方向上變更，乃在液狀的絕緣樹脂中設 置導電粒子，並將導電性漿料於電極上塗佈之狀態下，以 40°C以上且2小時以上之加熱使粒子沈降的連接方法。但 是，實際的連接必須以短時間進行，必須使用固體膜狀態 的異向導電膜。更且，爲了使厚度方向具有粒子分佈，其 有效爲以具有2層以上之膜構造，並且分成設置粒子的導 電層、和未設置粒子的絕緣層構造》 又，專利文獻3爲對於導電層和絕緣層，對熔融黏度 之最低値加以差異的材料構造。但是，於使用實際之樹脂 膜片的連接成形中，因爲使用升溫速度快的條件（170 °C /1 0 s等），故由最低黏度直到電極間隔爲與粒徑相等爲止 之連接初期狀態的黏度變化爲重要的。 〔先前技術文獻〕 〔專利文獻〕 ‘ 〔專利文獻1〕特開昭63 - 1 02 1 1 0號公報 〔專利文獻2〕特開平1 0-200243號公報 〔專利文獻3〕特開2005- 1 46044號公報 【發明內容】 〔發明所欲解決之問題〕 將內含具有導電性之樹脂膜材料，設置於欲連接的電 極間，且藉由縮短電極間距離之樹脂膜材料的壓縮，使內 含具有導電性之粒子的樹脂膜材料流動，並於連接成形後[Technical Field] The present invention relates to a resin film containing conductive particles and an electronic component electrically connected to a resin film containing conductive particles. In a stage in which the resin film material having the conductive particles is formed to form the resin between the electrodes, the interval between the electrodes is separated by the thickness of the film while the resin film material containing the particles is sandwiched, and the upper electrode is separated from the upper electrode. When the lower electrode is heated by the resin film material, the resin film material is filled by compression at a shortened electrode interval, and the resin film material containing the conductive particles is flowed, and the step of sandwiching the particles between the electrodes is performed after the connection molding. The invention relates to a resin film containing conductive particles in which the particle trapping rate between the electrodes after the connection molding (the ratio of the number of particles existing between the electrodes before the bonding and the number of particles sandwiched between the electrodes after the bonding) is increased. And an electronic component electrically connected by the above resin film. [Prior Art] Patent Literature 1, Patent Document 2, and Patent Document 3 are known, for example, in the patent documents of the material composition of the anisotropic conductive film. Patent Document 1 discloses a technique for determining the ratio of the thickness dimension to the particle diameter of a resin film containing conductive particles, and shows that the entire thickness of the isotropic conductive film is equal to or less than twice the particle diameter. However, in the actual connection, the thickness of each of the opposite-direction conductive films necessary for connecting and bonding the electrodes is different. Further, Patent Document 2 discloses a technique in which the density of the -5 - 201215504 conductive material dispersed in the anisotropic conductive paste is changed in the thickness direction, and it is shown that the density of the conductive material is changed in the thickness direction. In the state in which the conductive particles are provided in the insulating resin and the conductive paste is applied onto the electrode, the particles are allowed to settle by heating at 40 ° C or more for 2 hours or longer. However, the actual connection must be carried out in a short time, and an anisotropic conductive film in a solid film state must be used. Further, in order to have a particle distribution in the thickness direction, it is effective to have a film structure having two or more layers, and is divided into a conductive layer in which particles are disposed, and an insulating layer in which particles are not provided. Further, Patent Document 3 is directed to a conductive layer and Insulation layer, a material structure that differs in the minimum enthalpy of melt viscosity. However, in the connection molding using the actual resin film, since the conditions of high temperature rise rate (170 °C / 10 s, etc.) are used, the initial state of the connection is obtained from the lowest viscosity until the electrode interval is equal to the particle diameter. Viscosity changes are important. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] Japanese Laid-Open Patent Publication No. JP-A No. Hei. No. Hei. SUMMARY OF THE INVENTION [Problem to be Solved by the Invention] A resin film material containing conductivity is provided between electrodes to be connected, and the resin film material is shortened by shortening the distance between electrodes. A resin film material containing conductive particles flows and is formed after joining

-6- 201215504 粒子被夾於電極間之連接成形步驟中，使連接成形前存在 於電極間之樹脂膜材料中內含的粒子數、與連接成形後於 電極間被夾住之粒子數的比率所示之粒子捕捉率提高，係 爲減低費用、提高導電性能之課題。 即，若粒子捕捉率低，則電極間被夾住之粒子數變少 ，因而發生連接電極間的導電性能降低，因此必須在初期 狀態使樹脂中內含許多費用高的導電粒子。因此，藉由使 樹脂膜材料中內含之粒子的配置適切化，則可提高粒子的 捕捉率，但必須減低費用、提高導電性能。 又，使用厚度方向以2層層合構成的樹脂膜材料，且 僅1層之樹脂膜中內含粒子時，由於根據電極形狀，使內 含粒子之樹脂膜層以接觸上方電極或下方電極任一者之狀 態下設置，使得粒子捕捉率爲不同。因此，必須檢討在連 接成形之前階段，若將根據電極形狀內含樹脂膜材料粒子 的樹脂膜層，以接觸上方電極或下方電極任一者設置，是 否可提高粒子的捕捉率。 又，使用厚度方向以2層層合構成的樹脂膜材料，且 僅1層之樹脂膜中內含粒子時，根據構成2層之絕緣層與 導電層之黏度、熱傳導率、發熱速度等之物性値的差，使 得粒子捕捉率爲不同。因此，必須藉由使構成2層之絕緣 層與導電層之材料物性値的差適切化’以圖謀粒子捕捉率 的提高。 (解決問題之手段） 201215504 爲了解決上述問題，本發明中，藉由使用常用的流體 解析程式（FLOW-3D FLOW SCIENCE公司），算出成形 前電極間存在之樹脂膜中內含的粒子數、和成形後電極間 夾住之粒子數之比率所示的粒子捕捉率，並且使樹脂膜材 料中內含之粒子配置、樹脂膜材料之黏度、發熱反應速度 、熱傳導率適切化。 例如，以2層層合所構成之樹脂膜材料，於2層中，僅1 層樹脂膜內含粒子之情形中，選定用以提高粒子捕捉率之適 切的樹脂膜材料全體的厚度、內含粒子之樹脂膜層的厚度。 本發明之的樹脂膜片，其特徵爲具備內含導電性粒子 之樹脂膜層及未內含導電性粒子之絕緣性之樹脂膜層之各 層之至少一層，於厚度方向層合2層以上，且內部含有由 該樹脂膜片之兩表面位於等距離之厚度方向之中心面的樹 脂膜層或鄰接於前述中心面之至少一層的樹脂膜層係藉由 未內含前述導電性粒子之絕緣性樹脂膜層所形成者。 更且，於連接成形之前階段，若將內含樹脂膜材料粒 子的樹脂膜層，以接觸上方電極或下方電極任一者設置， 則根據電極形狀選定是否可提高粒子的捕捉率。又，使用 於厚度方向以2層層合構成的樹脂膜材料，僅1層之樹脂 膜中內含粒子之情形中，其特徵爲使構成2層之絕緣層與 導電層之黏度、熱傳導率、發熱速度等之物性値有差別。 本發明中分散導電性粒子的接黏劑組成物，可列舉例 如，熱硬化性之接黏劑組成物、光硬化性之接黏劑組成物 等。具體而言，例如，可使用含有（1)環氧樹脂及（2)-6- 201215504 The ratio of the number of particles contained in the resin film material existing between the electrodes before the connection molding and the number of particles sandwiched between the electrodes after the connection is formed in the connection forming step between the electrodes The increase in the particle capture rate shown is a problem of reducing the cost and improving the conductivity. In other words, when the particle trapping rate is low, the number of particles sandwiched between the electrodes is reduced, so that the electrical conductivity between the electrodes is lowered. Therefore, it is necessary to contain a large amount of conductive particles having a high cost in the initial state. Therefore, by arranging the arrangement of the particles contained in the resin film material, the particle capture rate can be improved, but the cost must be reduced and the conductivity can be improved. Further, when a resin film material composed of two layers in the thickness direction is used, and only one layer of the resin film contains particles, the resin film layer containing the particles is contacted with the upper electrode or the lower electrode depending on the shape of the electrode. In the state of one, the particle capture rate is different. Therefore, it is necessary to review whether the resin film layer containing the resin film material particles according to the shape of the electrode is placed in contact with either the upper electrode or the lower electrode in the stage before the connection molding, and whether the particle capture rate can be improved. Further, when a resin film material composed of two layers in the thickness direction is used, and only one layer of the resin film contains particles, the physical properties such as viscosity, thermal conductivity, and heat generation rate of the insulating layer and the conductive layer constituting the two layers are used. The difference in enthalpy makes the particle capture rate different. Therefore, it is necessary to make the particle capture rate improve by making the difference between the physical properties of the insulating layer constituting the two layers and the material of the conductive layer appropriate. (Means for Solving the Problem) In order to solve the above problem, in the present invention, the number of particles contained in the resin film existing between the electrodes before molding is calculated by using a conventional fluid analysis program (FLOW-3D FLOW SCIENCE) The particle capture ratio indicated by the ratio of the number of particles sandwiched between the electrodes after molding, and the particle arrangement contained in the resin film material, the viscosity of the resin film material, the heat generation reaction rate, and the thermal conductivity are appropriately adjusted. For example, in the case where only one resin film contains particles in the resin film material which is formed by the two-layer lamination, the thickness and the content of the entire resin film material for improving the particle trapping rate are selected. The thickness of the resin film layer of the particles. The resin film of the present invention is characterized in that at least one layer of each of the resin film layer containing the conductive particles and the insulating resin film layer containing the conductive particles is laminated in two or more layers in the thickness direction. Further, the resin film layer having the center surface in the thickness direction of the two surfaces of the resin film or the resin film layer adjacent to at least one of the center faces is insulated by the conductive particles not containing the conductive particles. The resin film layer is formed. Further, when the resin film layer containing the resin film material particles is placed in contact with either the upper electrode or the lower electrode in the stage before the connection molding, whether or not the particle capturing ratio can be increased can be selected depending on the shape of the electrode. In addition, in the case where the resin film material which is laminated in two layers in the thickness direction is contained in the resin film of only one layer, the viscosity and thermal conductivity of the insulating layer and the conductive layer which constitute the two layers are characterized. There is a difference in physical properties such as the rate of heat generation. The adhesive composition for dispersing the conductive particles in the present invention may, for example, be a thermosetting adhesive composition or a photocurable adhesive composition. Specifically, for example, (1) epoxy resin and (2) can be used.

-8- S 201215504 環氧樹脂之硬化劑的接黏劑組成物、含有（3 )自由基聚 合性物質及（4 )經由加熱或光發生游離自由基之硬化劑 的接黏劑組成物、含有上述（1)及（2)成分之接黏劑組 成物與含有上述（3)及（4)成分之接黏劑組成物的混合 組成物等。 上述成分（1 )之環氧樹脂，可列舉例如，雙酚A型 環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、苯酚 酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、雙酚A 酚醛清漆型環氧樹脂、雙酚F酚醛清漆型環氧樹脂、脂環 式環氧樹脂、環氧丙基酯型環氧樹脂、環氧丙基胺型環氧 樹脂、乙內醯脲型環氧樹脂、異氰脲酸酯型環氧樹脂、脂 肪族鏈狀環氧樹脂等。此些環氧樹脂亦可經鹵素化，且亦 可經氫化。又，亦可於環氧樹脂的側鏈附加丙烯醯基或甲 基丙烯醯基。其可單獨或組合使用2種以上。 上述成分（2 )之硬化劑，若可使環氧樹脂硬化者則 無特別限制，可列舉例如，陰離子聚合性之觸媒型硬化劑 、陽離子聚合性之觸媒型硬化劑、加聚型之硬化劑等。其 中’由速硬化性優良、不要考慮化學當量方面而言，以陰 離子或陽離子聚合性之觸媒型硬化劑爲佳。 上述陰離子或陽離子聚合性之觸媒型硬化劑，可列舉 例如，咪唑系、醯肼系、三氟化硼-胺錯合物、鏑鹽、胺 酶亞胺、二胺基馬來醯腈、三聚氰胺及其衍生物、聚胺之 鹽、雙氰胺等，且其變性物等亦可使用。 上述加聚型硬化劑可列舉例如，聚胺類、聚硫醇、聚 201215504 酚、酸酐等。 陰離子聚合型之觸媒型硬化劑，例如於配合三級胺類 和咪唑類時，環氧樹脂爲以160°C~200°C左右之中溫加熱 數1 〇秒鐘〜數小時左右予以硬化。因此，因爲可使用時間 (使用壽命）變得較長故爲佳。 又，經由能量線照射使環氧樹脂硬化的感光性鑰鹽（ 主要使用芳香族重氮鑰鹽、芳香族鏑鹽等）亦可適當使用 作爲陽離子聚合型的觸媒型硬化劑。又，除了能量線照射 以外，作爲經由加熱活化使環氧樹脂硬化的陽離子聚合型 之觸媒型硬化劑，例如，有脂肪族鏑鹽等。此種硬化劑由 於具有速硬化性之特徵，故爲佳。 將此些環氧樹脂之硬化劑，以聚胺基甲酸酯系、聚酯 系等之高分子物質、鎳、銅等之金屬薄膜、矽酸鈣等之無 機物等被覆之微膠囊化的潛在性硬化劑，因可使用時間延 長故爲佳。 上述環氧樹脂之硬化劑的配合量，於連接時間爲25 秒鐘以下之情形，爲了取得充分的反應率，相對於環氧樹 脂與視需要配合之膜成形材合計100質量份，以1〜50質 量份爲佳。 此些硬化劑可單獨或組合使用2種以上。 上述成分（3)之自由基聚合性物質，例如，若具有 經由自由基進行聚合之官能基的物質，則無特別限制可使 用。具體而言，可列舉例如’丙烯酸酯（亦包含對應之甲 基丙烯酸酯，以下相同）化合物、丙烯醯氧基（亦包含對 -10- a 201215504 應之甲基丙烯醯氧基’以下相同）化合物、馬來醯亞胺化 合物、檸康醯亞胺樹脂、萘酚醯亞胺樹脂等。此些自由基 聚合性物質可以單體或低聚物之狀態使用，且亦可倂用單 體與低聚物。 上述丙烯酸酯化合物，可列舉例如，丙烯酸甲酯、丙 烯酸乙酯、丙烯酸異丙酯、丙烯酸異丁酯、乙二醇二丙烯 酸酯、二乙二醇二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、 四羥甲基甲烷四丙烯酸酯、2-羥基-1，3-二丙烯醯氧基丙烷 、2,2-雙〔4-(丙烯醯氧甲氧基）苯基〕丙烷、2,2-雙〔4-(丙烯醯氧聚乙氧基）苯基〕丙烷、二環戊烯基丙烯酸酯 、三環癸基丙烯酸酯、三（丙烯醯氧乙基）異氰脲酸酯、 胺基甲酸酯丙烯酸酯等。又，視需要亦可適當使用氫醌、 甲醚氫醌類等之抑聚劑。又，由提高耐熱性之觀點而言， 以丙烯酸酯化合物等之自由基聚合製物質爲具有至少1種 二環戊烯基、三環癸基、三哄環等之取代基爲佳》 又，於上述自由基聚合性物質倂用具有下述化學式（ I)所示之磷酸酯構造的自由基聚合性物質爲佳。此時， 爲了提高對於金屬等之無機物表面的接黏強度，以電路電 極彼此間接黏爲適當。 -11 - 201215504 化1 〇 (HO) 3-n 〇CH3丨丨已 OCI^Ch^O-C-C一CH: ⑴ (式中，n爲1〜3之整數〕 具有此磷酸酯構造之自由基聚合性物質，例如，使磷 酸酐與（甲基）丙烯酸2-羥乙酯反應則可取得。具體而言 ，可列舉例如，單（2 -甲基丙烯醯氧乙基）酸式磷酸酯、 二（2-甲基丙烯醯氧乙基）酸式磷酸酯等。 具有上述化學式（I)所示之磷酸酯構造之自由基聚 合性物質的配合量，相對於自由基聚合性物質與視需要配 合之膜成形材之合計1〇〇質量份，以0.01〜50質量份爲佳 又，上述自由基聚合性物質亦可倂用丙烯酸烯丙酯。 此時，丙烯酸烯丙酯之配合量，相對於自由基聚合性物質 ，與視需要配合之膜成形材之合計1 〇 0質量份，以0.1〜1 0 質量份爲佳β 此些自由基聚合性物質可單獨或組合使用2種以上。 上述成分（4)之經由加熱或光發生游離自由基的硬 化劑’例如，若可經由加熱或紫外線等之電磁波照射分解 發生游離自由基的硬化劑，則無特別限制可使用。具體而 言’可列舉例如，過氧化化合物，偶氮系化合物等。此類-8- S 201215504 Adhesive composition of epoxy resin hardener, adhesive composition containing (3) radically polymerizable substance and (4) hardener which generates free radicals by heating or light, containing The mixed composition of the adhesive composition of the above components (1) and (2) and the adhesive composition containing the above components (3) and (4). Examples of the epoxy resin of the component (1) include a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol S type epoxy resin, a phenol novolac type epoxy resin, and a cresol novolac. Epoxy resin, bisphenol A novolak type epoxy resin, bisphenol F novolak type epoxy resin, alicyclic epoxy resin, epoxy propyl ester type epoxy resin, epoxy propyl amine type epoxy Resin, carbendazim type epoxy resin, isocyanurate type epoxy resin, aliphatic chain epoxy resin, and the like. These epoxy resins can also be halogenated and can also be hydrogenated. Further, an acrylonitrile group or a methyl acrylonitrile group may be added to the side chain of the epoxy resin. These may be used alone or in combination of two or more. The curing agent of the component (2) is not particularly limited as long as it can cure the epoxy resin, and examples thereof include an anionic polymerizable catalyst hardener, a cationic polymerizable catalyst hardener, and a polyaddition type. Hardener, etc. Among them, an anionic or cationic polymerizable catalyst type hardener is preferred because it is excellent in quick-curing property and does not consider chemical equivalent. Examples of the anionic or cationically polymerizable catalyst-type curing agent include an imidazole-based, an anthraquinone-based, a boron trifluoride-amine complex, a phosphonium salt, an aminase, and a diamine-based maleonitrile. Melamine and its derivatives, salts of polyamines, dicyandiamide, etc., and denatured substances thereof and the like can also be used. Examples of the polyaddition-type curing agent include polyamines, polythiols, poly 201215504 phenols, and acid anhydrides. An anionic polymerization type catalyst hardener, for example, when a tertiary amine and an imidazole are blended, the epoxy resin is hardened by heating at a temperature of about 160 ° C to 200 ° C for a period of about 1 〜 to several hours. . Therefore, it is preferable because the usable time (life) becomes longer. In addition, a photosensitive key salt (mainly using an aromatic diazo salt or an aromatic onium salt) which cures an epoxy resin by energy ray irradiation can also be suitably used as a cationic polymerization type catalyst type hardener. In addition, as the cationic polymerization type catalyst-type curing agent which cures the epoxy resin by heat activation, for example, an aliphatic sulfonium salt or the like is used. Such a hardener is preferred because of its characteristics of rapid hardenability. These epoxy resin hardeners are coated with a polymer material such as a polyurethane or a polyester, a metal film such as nickel or copper, or an inorganic substance such as calcium silicate. Sex hardeners are preferred because of their prolonged use. In the case where the bonding time of the epoxy resin is 25 seconds or less, in order to obtain a sufficient reaction rate, 100 parts by mass of the epoxy resin and the film forming material to be blended as needed are 1 to 1 50 parts by mass is preferred. These hardeners may be used alone or in combination of two or more. The radically polymerizable substance of the component (3) is not particularly limited as long as it has a functional group which is polymerized by a radical. Specifically, for example, an acrylate (including a corresponding methacrylate, the same applies hereinafter) compound and an acryloxy group (including the same methacryloxy group as the -10-a 201215504) are exemplified below. A compound, a maleimide compound, a citrate imine resin, a naphthol quinone imine resin, or the like. These radical polymerizable substances can be used in the form of monomers or oligomers, and monomers and oligomers can also be used. Examples of the acrylate compound include methyl acrylate, ethyl acrylate, isopropyl acrylate, isobutyl acrylate, ethylene glycol diacrylate, diethylene glycol diacrylate, and trimethylolpropane triacrylate. , tetramethylol methane tetraacrylate, 2-hydroxy-1,3-dipropenyloxypropane, 2,2-bis[4-(acrylomethoxymethoxy)phenyl]propane, 2,2- Bis[4-(propylene oxypolyethoxy)phenyl]propane, dicyclopentenyl acrylate, tricyclodecyl acrylate, tris(propylene oxyethyl) isocyanurate, amine Acid ester acrylate and the like. Further, a polymerization inhibitor such as hydroquinone or methyl ether hydroquinone may be suitably used as needed. In addition, it is preferable that a radically polymerizable material such as an acrylate compound is a substituent having at least one kind of dicyclopentenyl group, tricyclodecanyl group, triterpene ring or the like, from the viewpoint of improving heat resistance. The radically polymerizable substance is preferably a radically polymerizable substance having a phosphate structure represented by the following chemical formula (I). At this time, in order to increase the bonding strength to the surface of the inorganic material such as metal, it is appropriate to indirectly bond the circuit electrodes to each other. -11 - 201215504 11 (HO) 3-n 〇CH3丨丨OCI^Ch^OCC-CH: (1) (wherein n is an integer of 1 to 3) A radically polymerizable substance having this phosphate structure For example, a reaction of phosphoric anhydride with 2-hydroxyethyl (meth)acrylate can be carried out. Specifically, for example, mono(2-methylpropenyloxyethyl) acid phosphate, two (2) - methacryloyloxyethyl) acid phosphate, etc. The amount of the radically polymerizable substance having the phosphate structure represented by the above chemical formula (I), and the film of the radically polymerizable substance and optionally The total amount of the molded material is preferably 0.01 to 50 parts by mass, and the radical polymerizable substance may be an allyl acrylate. In this case, the amount of allyl acrylate is relative to the radical. The total amount of the polymerizable material and the film forming material to be blended is preferably 0.1 to 10 parts by mass, preferably 0.1 to 10 parts by mass. These radical polymerizable substances may be used alone or in combination of two or more. a hardener that generates free radicals via heating or light', for example, if Hardener free radicals generated by heating or irradiation of electromagnetic waves decomposition of ultraviolet radiation, may be used is not particularly limited. Specifically Introduction 'include e.g., peroxide compounds, azo compounds, etc. Such

-12- S 201215504 硬化劑可根據目的之連接溫度、連接時間、使用壽命等而 適當選定。由高反應性和提高使用壽命之觀點而言，以半 衰期10小時之溫度爲40 °C以上，且，半衰期1分鐘之溫 度爲180°C以下的有機過氧化物爲佳，並以半衰期10小時 之溫度爲60°C以上，且，半衰期1分鐘之溫度爲170°C以 下的有機過氧化物爲更佳。 經由加熱發生游離自由基的硬化劑，更具體而言，可 列舉過氧化二醯基、過氧基二碳酸酯、過氧基酯、過氧基 縮酮、過氧化二烷基、氫過氧化物、過氧化甲矽烷基等。 其中，亦以過氧基酯、過氧化二烷基、氫過氧化物、過氧 化甲矽烷基等爲佳，且以取得高反應性之過氧基酯爲更佳 〇 此些經由加熱或光發生游離自由基的硬化劑，例如， 使用分解促進劑、抑制劑等亦可》又，將此些硬化劑以聚 胺基甲酸酯系、聚酯系之高分子物質等被覆予以微膠囊化 並且賦予潛在性亦可。微膠囊化之硬化劑因爲可延長可使 用時間故爲佳。 上述經由加熱或光發生游離自由基之硬化劑的配合量 ，於連接時間爲2 5秒鐘以下之情形，爲了取得充分的反 應率，相對於自由基聚合物物質與視需要配合之膜成形材 之合計1〇〇質量份，以2〜10質量份爲佳。 此些經由加熱或光發生游離自由基之硬化劑可單獨或 組合使用2種以上。 於電路連接材料中，視需要，亦可添加膜成形材。所 -13- 201215504 謂膜成形材，例如，將液狀物固形化，並將構成組成物作 成膜形狀之情形中，可賦予此膜的操作容易，不會容易裂 開、割開、發黏的機械特性等，可以通常之狀態（常溫常 壓下）以膜型式操作。此些膜成形材可列舉例如，苯氧基 樹脂、聚乙烯基甲縮醛樹脂、聚苯乙烯樹脂、聚乙烯基丁 縮醛樹脂、聚酯樹脂、聚醯胺樹脂、二甲苯樹脂、聚胺基 甲酸酯樹脂等。其中，亦可苯氧基樹脂由於接黏性、相溶 性、耐熱性、機械強度等優良，故爲佳。 上述膜成形材的配合量，在含有（1)環氧樹脂及（2 )環氧樹脂之硬化劑的接黏劑組成物中配合時，由電路連 接時之樹脂流動性的觀點而言，相對於環氧樹脂與膜成形 材之合計1〇〇質量份，以5~80質量份爲佳。 又，上述膜成形材的配合量，在配合於含有（3)自 由基聚合性物質及（3)經由加熱或光發生游離自由基之 硬化劑的接黏劑組成物時，由電路連接時之樹脂流動性的 觀點而言，相對於自由基聚合性物質與膜成形材之合計 1〇〇質量份，以5〜80質量份爲佳。 此些膜成形材可單獨或組合使用2種以上。電路連接 材料，亦可進一步含有丙烯酸、丙烯酸酯、甲基丙烯酸酯 及丙烯腈中之至少一者作爲單體成分的聚合物或共聚物。 由緩和應力的觀點而言，以含有環氧丙基醚基之環氧丙基 丙烯酸酯或環氧丙基甲基丙烯酸酯作爲單體成分之共聚物 系丙烯基橡膠爲佳。此些丙烯基橡膠之重量平均分子量由 提高接黏劑之凝集力的觀點而言，以20萬以上爲佳。 -14- 201215504 異向導電性粒子的配合量，在含有（1)環氧樹脂及 (2 )環氧樹脂之硬化劑的接黏劑組成物中配合時，相對 於環氧樹脂與膜成形材之合計100體積份，以0.1〜100體 積份爲佳。 又，異向導電性粒子的配合量，在含有（3 )自由基 聚合性物質及（3)經由加熱或光發生游離自由基之硬化 劑的接黏劑組成物中配合時，相對於自由基聚合性物質與 膜成形材之合計100體積份，以1~100體積份爲佳。 於電路連接材料中，進一步，亦可視需要含有橡膠微 粒子、充塡劑、軟化劑、促進劑、抗氧化劑、著色劑、難 燃化劑、觸變劑、偶合劑、酚樹脂、三聚氰胺樹脂、異氰 酸酯類等》 又，本發明之導電性粒子若具有可取得電性連接之導 電性，則無特別限制。上述導電性粒子可列舉例如，Au、 Ag、Ni、Cu及焊錫等之金屬粒子和碳等。又，導電性粒 子係將作爲核之粒子被覆1層或2層以上之層，且其最外 層爲具有導電性者亦可。又，上述導電性粒子爲以塑膠等 之絕緣性粒子作爲核，並於此核表面以上述金屬或碳作爲 主成分之層予以被覆亦可。又，亦可將其進行絕緣被覆處 理。彼等可單獨或組合使用2種以上。 又，於取得本發明之樹脂膜層上，將上述接黏劑組成 物中視需要分散導電性粒子的混合液，於支持基材上塗佈 ，或於非織布等之基材中含浸上述混合液並且載置於支持 基材上，除去溶劑等即可取得。 -15- 201215504 將如此所得之絕緣性樹脂膜層和含有導電性粒子之樹 脂膜層分別貼合，則可簡單地多層化》 根據所欲物性適當調整材料和配合量，則可如上述製 造樹脂薄片，但亦可由市場購得。可購得之樹脂膜片可列 舉例如，日立化成工業（股）製製品名ANISOLM AC-200 系、AC-2000 系、AC-4000 系、AC-7000 系、AC-8000 系 、AC-9000 系、Sony Chemical & Informatiοn Device (股 )製製品名 CP901AH-35AC、CP1220IS、CP1720ISV、 CP5720GT 、 CP5720ISV 、 CP5920IKS 、 CP6920F 、 CP6920F3 、 CP6930IFN 、 CP6930JV3 、 CP8016K-35AC 、 CP9042KSV 、 CP973 1 SB 、 CP9742KS 、 CP9842KS 、 CP9920ISV、CP205 3 1 -35AG、CP3 094 1 -20 AB、DP3232S9 、DP3342MS 、 FP1708E 、 EP1726Y 、 FP1830VS 、 FP2322D 、FP2622A、FP55 30DF、（股）EXAX 製製品名 EX-G192 、EX-G193、ΕΧ-Ρ6906、ΕΧ-Ρ6907 等。此些樹脂膜片爲 含有導電粒子之單層樹脂膜片時，經由將其除去則可簡便 取得絕緣性的樹脂膜片。經由分別貼合如此所得之絕緣性 樹脂膜片與含有導電性粒子的樹脂膜片，則可予以多層化 (發明之效果） 若根據本發明，在以電極間壓縮予以連接成形，使 含粒子之樹脂膜材料流動，且成形後粒子被夾於電極間的 步驟中，藉由選擇可提高粒子捕捉率之適切樹脂膜材料全 -16- S； 201215504 體的厚度、內含粒子之樹脂膜層的厚度、或、將內含粒子 之樹脂膜層接觸上方電極或下方電極任一者之各電極形狀 的膜設置方法的適切化、適切樹脂膜之導電層與絕緣層的 黏度差、熱傳導率差、發熱速度差’則可實現費用減低、 導電性能提高。 【實施方式】 以下，一邊參照所附圖面，一邊說明本發明之實施形 態。首先，使用圖1說明解析對象之成形步驟。 圖1 (a)爲示出於XZ剖面之X方向的正和負側以對 稱形狀設置電極之構造中，將要電性連接的一對電極。又 ’圖1(b)爲示出於圖1(a)垂直之YZ剖面之Y方向 上延伸且電性連接的一對電極。 連接成形之初期狀態中，內含具有導電性粒子1之樹 脂材料2’被設置於半導體集成電路（IC) 3之上方電極4 與基板5之下方電極6間。此處，將上方電極4之高度以 HU表不’下方電極6之電極高度以Hs表示，欲電連接之 1對電極高度和以HI (=HU + Hs)表示，電極4、6之寬度 以W1表示，X方向之正與負側設置之電極4間隔（間距 )以W2表示，Y方向之電極長度以li表示。 連接成形步驟爲令加熱的半導體集成電路（IC) 3於 基板5之方向上移動，將含有粒子丨的樹脂材料2壓縮， ^ 使內含粒子1的樹脂材料2流動。此時，藉由半導體集成 電路（1C) 3之電極4與樹脂材料2的接觸，使樹脂材料 -17- 201215504 2的溫度變化，並且伴隨溫度變化而產生黏度變化，樹脂 材料2與粒子丨共同壓縮而流動^ 樹脂材料2係於含有環氧樹脂、環氧樹脂之潛在性硬 化劑及苯氧基樹脂之接黏劑組成物中，視需要，使用於將 導電性粒子分散》 另外，半導體集成電路（1C) 3之電極4與基板5之 電極6的間隔比粒子1之直徑更小時，夾於電極4間的粒 子被變形壓縮。半導體集成電路（1C) 3之移動終了時， 藉由被夾在電極4、6間之粒子1的導電性，則可傳遞半 導體集成電路（1C) 3與基板5間的電信號。 此處，根據成形後之上方電極4與下方電極6所夾住 之粒子1數及粒子1與電極4、6的接觸面積，決定半導 體集成電路（1C ) 3與基板5間的導電性。另外，導電性 爲根據對電極4、6間外加一定電壓時所流過的電流加以 評估。因此，爲了提高導電性能，必須提高成形後之上方 電極4與下方電極6所夾住的粒子數。 於下列之檢討中，示出關於可將成形前電極4、6間 存在之樹脂膜中粒子1之數目、與成形後電極4、6間夾 住之粒子1數目之比率所定義之粒子捕捉率提高的樹脂膜 材料構造。 關於厚度方向以2層層合所構成的樹脂膜材料，對於 2層中僅1層之樹脂膜層中設置粒子1的樹脂膜材料，使 用流動解析進行檢討。於圖2中示出電極4' 6及樹脂膜 材的尺寸。如此，使用5種不同的電極形狀4，將X方向 -18--12- S 201215504 Hardener can be selected according to the connection temperature, connection time, service life, etc. of the purpose. From the viewpoint of high reactivity and improvement in service life, an organic peroxide having a half-life of 10 hours at a temperature of 40 ° C or higher and a half-life of 1 minute at a temperature of 180 ° C or less is preferable, and a half life of 10 hours is preferable. The organic peroxide having a temperature of 60 ° C or higher and a half-life of 1 minute and a temperature of 170 ° C or less is more preferable. A hardener which generates free radicals by heating, more specifically, a dinonyl peroxide, a peroxydicarbonate, a peroxyester, a peroxyketal, a dialkyl peroxide, a hydroperoxide , meta-methyl methacrylate, etc. Among them, a peroxy ester, a dialkyl peroxide, a hydroperoxide, a methyl decyl peroxide, etc. are preferred, and a peroxy ester having a high reactivity is more preferable. The curing agent which generates free radicals may be, for example, a decomposition accelerator or an inhibitor, and may be microencapsulated by coating the curing agent with a polyurethane material or a polyester polymer material. And the potential can be given. The microencapsulated hardener is preferred because it can be extended. The amount of the curing agent which generates free radicals by heating or light is a film forming material which is blended with a radical polymer material and, if necessary, in order to obtain a sufficient reaction rate when the bonding time is 25 seconds or less. The total amount is 1 part by mass, preferably 2 to 10 parts by mass. These hardeners which generate free radicals by heating or light may be used alone or in combination of two or more. In the circuit connecting material, a film forming material may be added as needed. In the case where the liquid material is solidified and the constituent composition is formed into a film shape, the operation of the film can be easily performed without being easily cracked, cut, and sticky. The mechanical properties and the like can be operated in a film form in a normal state (at normal temperature and normal pressure). Examples of the film forming material include a phenoxy resin, a polyvinyl acetal resin, a polystyrene resin, a polyvinyl butyral resin, a polyester resin, a polyamide resin, a xylene resin, and a polyamine. Carbamate resin and the like. Among them, the phenoxy resin is preferably excellent in adhesion, compatibility, heat resistance, mechanical strength, and the like. When the compounding amount of the film forming material is blended in the adhesive composition containing the curing agent of (1) epoxy resin and (2) epoxy resin, the resin fluidity at the time of circuit connection is relatively The total amount of the epoxy resin and the film-forming material is preferably 1 part by mass, preferably 5 to 80 parts by mass. Further, when the amount of the film forming material is blended in an adhesive composition containing (3) a radically polymerizable substance and (3) a curing agent which generates free radicals by heating or light, when it is connected by a circuit From the viewpoint of the fluidity of the resin, it is preferably 5 to 80 parts by mass based on 1 part by mass of the total of the radical polymerizable material and the film formed material. These film forming materials may be used alone or in combination of two or more. The circuit connecting material may further contain a polymer or copolymer of at least one of acrylic acid, acrylate, methacrylate and acrylonitrile as a monomer component. From the viewpoint of relaxation stress, a copolymer of a propylene-based rubber containing a glycidyl acrylate group or a propylene methacrylate having a glycidyl acrylate group as a monomer component is preferred. The weight average molecular weight of the propylene-based rubber is preferably 200,000 or more from the viewpoint of improving the cohesive force of the adhesive. -14- 201215504 The amount of the isotropic conductive particles is matched with the epoxy resin and the film forming material when blended in the adhesive composition containing the hardener of (1) epoxy resin and (2) epoxy resin. The total amount is 100 parts by volume, preferably 0.1 to 100 parts by volume. Further, when the amount of the isotropic conductive particles is blended in the adhesive composition containing the (3) radically polymerizable material and (3) the curing agent which generates free radicals by heating or light, it is relative to the radical. The total amount of the polymerizable material and the film-forming material is preferably from 1 to 100 parts by volume per 100 parts by volume. Further, in the circuit connecting material, rubber microparticles, sputum, softener, accelerator, antioxidant, colorant, flame retardant, thixotropic agent, coupling agent, phenol resin, melamine resin, isocyanate may be contained as needed. Further, the conductive particles of the present invention are not particularly limited as long as they have electrical conductivity capable of obtaining electrical connection. Examples of the conductive particles include metal particles such as Au, Ag, Ni, Cu, and solder, and carbon. Further, the conductive particles may be coated with one or two or more layers as particles of the core, and the outermost layer may be electrically conductive. Further, the conductive particles may be coated with insulating particles such as plastic as a core, and may be coated on the surface of the core with the metal or carbon as a main component. Alternatively, it may be subjected to an insulation coating treatment. These may be used alone or in combination of two or more. Further, in the resin film layer of the present invention, a mixture of the conductive particles is optionally dispersed in the adhesive composition, and is applied onto a support substrate or impregnated with a substrate such as a nonwoven fabric. The liquid is placed on a support substrate, and the solvent or the like is removed. -15-201215504 When the insulating resin film layer thus obtained and the resin film layer containing the conductive particles are bonded to each other, it is possible to easily multilayer. Depending on the desired properties, the material and the compounding amount can be appropriately adjusted, and the resin can be produced as described above. Sheets, but are also commercially available. For example, Hitachi Chemical Co., Ltd. product name ANISOLM AC-200, AC-2000, AC-4000, AC-7000, AC-8000, AC-9000 , manufactured by Sony Chemical & Informatiοn Device, CP901AH-35AC, CP1220IS, CP1720ISV, CP5720GT, CP5720ISV, CP5920IKS, CP6920F, CP6920F3, CP6930IFN, CP6930JV3, CP8016K-35AC, CP9042KSV, CP973 1 SB, CP9742KS, CP9842KS, CP9920ISV , CP205 3 1 -35AG, CP3 094 1 -20 AB, DP3232S9, DP3342MS, FP1708E, EP1726Y, FP1830VS, FP2322D, FP2622A, FP55 30DF, (EX) EXAX product name EX-G192, EX-G193, ΕΧ-Ρ6906, ΕΧ-Ρ6907 and so on. When the resin film is a single-layer resin film containing conductive particles, the resin film can be easily obtained by removing the resin film. By separately bonding the insulating resin film sheet thus obtained and the resin film sheet containing the conductive particles, it is possible to form a multilayer (effect of the invention). According to the invention, the film is formed by compression between the electrodes. The resin film material flows, and the particles are sandwiched between the electrodes after the forming, by selecting a suitable resin film material which can increase the particle capturing rate, the total thickness of the body is 16-S; 201215504, the thickness of the body, and the resin film layer containing the particles The method of setting the thickness of the film, or the method of disposing the resin film layer containing the particles in contact with each of the upper electrode or the lower electrode, and the difference in viscosity between the conductive layer and the insulating layer of the resin film, and the thermal conductivity are poor. The difference in heat generation rate can reduce the cost and improve the conductivity. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, the forming step of the analysis target will be described using FIG. Fig. 1 (a) is a pair of electrodes to be electrically connected in a structure in which electrodes are arranged in a symmetrical shape on the positive and negative sides in the X direction of the XZ section. Further, Fig. 1(b) is a pair of electrodes which are extended and electrically connected in the Y direction of the vertical YZ section of Fig. 1(a). In the initial state of the connection molding, the resin material 2' containing the conductive particles 1 is provided between the upper electrode 4 of the semiconductor integrated circuit (IC) 3 and the lower electrode 6 of the substrate 5. Here, the height of the upper electrode 4 is represented by HU, and the height of the electrode of the lower electrode 6 is represented by Hs, and the height of the pair of electrodes to be electrically connected is represented by HI (=HU + Hs), and the width of the electrodes 4, 6 is W1 indicates that the electrode 4 spacing (pitch) between the positive and negative sides of the X direction is represented by W2, and the electrode length of the Y direction is represented by li. The connection forming step is such that the heated semiconductor integrated circuit (IC) 3 is moved in the direction of the substrate 5, and the resin material 2 containing the particles 压缩 is compressed to flow the resin material 2 containing the particles 1. At this time, the temperature of the resin material -17-201215504 2 is changed by the contact of the electrode 4 of the semiconductor integrated circuit (1C) 3 with the resin material 2, and the viscosity changes due to the temperature change, and the resin material 2 and the particle 丨 are collectively Compressed and flowed ^ The resin material 2 is used in an adhesive composition containing an epoxy resin, an epoxy resin, a latent hardener, and a phenoxy resin, and is used to disperse conductive particles as needed. In addition, semiconductor integration The distance between the electrode 4 of the circuit (1C) 3 and the electrode 6 of the substrate 5 is smaller than the diameter of the particle 1, and the particles sandwiched between the electrodes 4 are deformed and compressed. When the movement of the semiconductor integrated circuit (1C) 3 is completed, the electrical signal between the semiconductor integrated circuit (1C) 3 and the substrate 5 can be transmitted by the conductivity of the particles 1 sandwiched between the electrodes 4 and 6. Here, the conductivity between the semiconductor integrated circuit (1C) 3 and the substrate 5 is determined based on the number of particles 1 sandwiched between the upper electrode 4 and the lower electrode 6 after molding and the contact area between the particles 1 and the electrodes 4 and 6. Further, the conductivity is evaluated based on the current flowing when a certain voltage is applied between the electrodes 4 and 6. Therefore, in order to improve the electrical conductivity, it is necessary to increase the number of particles sandwiched between the upper electrode 4 and the lower electrode 6 after molding. In the following review, the particle capture ratio defined by the ratio of the number of particles 1 in the resin film existing between the pre-formed electrodes 4 and 6 to the number of particles 1 sandwiched between the formed electrodes 4 and 6 is shown. Improved resin film material construction. In the resin film material which is formed by laminating two layers in the thickness direction, the resin film material in which the particles 1 are provided in the resin film layer of only one of the two layers is examined by flow analysis. The dimensions of the electrode 4' 6 and the resin film are shown in Fig. 2 . So, using 5 different electrode shapes 4, the X direction is -18-

Si 201215504 之正、負方向均對稱，設定解析模型。 此處，於2層之樹脂膜內，將連接配置於上方電極4 的樹脂膜層定義爲第1層，與下方電極6連接配置之樹脂 膜層定義爲第2層，並且於第1層或第2層中配置內含粒 子1的粒子設置層（導電層）。另外，圖2爲示出設置層 (導電層）爲第2層，僅於第1層設置不內含粒子之層（ 絕緣層）之情形，下方電極6之高度Hs = 0.5pm。 此處，粒子1之直徑以4μιη、粒子設置層之厚度以4 、6、8μιη之三水準，且樹脂膜全體之厚度一定爲16μιη。 另外，爲了比較，亦進行粒子設置層之厚度爲1 6μιη (於 樹脂膜之全體厚度設置粒子）之情形的檢討。又，內含之 粒子數，於粒子設置層之厚度爲4μιη之情形中爲200個， 於6μιη之情形中爲300個，於8μηι之情形中爲400個， 於16μιη之情形中爲800個。 又，上方電極4的溫度爲在10秒鐘由25 °C上升至 200°C，且上方電極4爲在下方電極6的方向上移動。初 期上方電極4的移動速度爲lxl(T3m/s。另外，於流動解 析上使用常用之流體解析軟體。 解析中，考慮初期上方電極4的移動速度、與樹脂2 的黏度變化，計算上方電極4的移動速度，且粒子1於樹 脂2內以假設性的標記粒子型式設置。另外，第1層與第 2層樹脂2的物性値爲相同，且解析所用之發熱反應式示 於式（1)〜（5)，黏度式示於（6)〜（8)。又，樹脂2 爲使用熱硬化性樹脂之環氧樹脂，物性値（黏度式之係數 -19- 201215504 、發熱反應式之係數）示於表1之樹脂（1)。另外’熱 傳導率爲0.2W/(m.K)、比熱爲1700J/(kg.K)、密 度爲 1100kg/m3 。 ◎發熱反應式 da/dt= ( Kl+K2aM) ( 1-a) N …（1)The positive and negative directions of Si 201215504 are symmetrical, and the analytical model is set. Here, in the resin film of two layers, the resin film layer which is connected to the upper electrode 4 is defined as the first layer, and the resin film layer which is connected to the lower electrode 6 is defined as the second layer, and is in the first layer or In the second layer, a particle-setting layer (conductive layer) containing the particles 1 is disposed. Further, Fig. 2 shows a case where the installation layer (conductive layer) is the second layer, and only the layer (insulating layer) containing no particles is provided in the first layer, and the height Hs of the lower electrode 6 is 0.5 pm. Here, the diameter of the particles 1 is 4 μm, and the thickness of the particle-providing layer is three levels of 4, 6, and 8 μm, and the thickness of the entire resin film is always 16 μm. Further, for comparison, a review was also made on the case where the thickness of the particle-setting layer was 16 μm (particles were provided in the entire thickness of the resin film). Further, the number of particles contained therein is 200 in the case where the thickness of the particle-setting layer is 4 μm, 300 in the case of 6 μηη, 400 in the case of 8 μηι, and 800 in the case of 16 μηη. Further, the temperature of the upper electrode 4 is raised from 25 °C to 200 °C in 10 seconds, and the upper electrode 4 is moved in the direction of the lower electrode 6. The moving speed of the initial upper electrode 4 is 1×1 (T3 m/s. Further, a commonly used fluid analysis software is used for the flow analysis. In the analysis, the upper electrode 4 is calculated in consideration of the moving speed of the initial upper electrode 4 and the viscosity change of the resin 2. The moving speed is set, and the particles 1 are provided in a hypothetical labeled particle pattern in the resin 2. The physical properties of the first layer and the second layer of resin 2 are the same, and the exothermic reaction formula used for the analysis is shown in the formula (1). ~(5), the viscosity type is shown in (6) to (8). Further, the resin 2 is an epoxy resin using a thermosetting resin, and the physical properties are 値 (the coefficient of the viscosity type -19 - 201215504, the coefficient of the heat reaction type) The resin (1) shown in Table 1. In addition, the 'thermal conductivity is 0.2 W/(mK), the specific heat is 1700 J/(kg.K), and the density is 1100 kg/m3. ◎ The heat reaction type da/dt= (Kl+K2aM) ) ( 1-a) N ...(1)

Kl=Ka exp ( -Ea/T ) …（2) K2 = Kb exp ( -Eb/T) ··· ( 3 ) a = Q/Q0 …（4) dQ/dt = Q0 ( Kl+K2aM ) ( 1-a) N …（5) 此處，a:反應率，t:時間，T:溫度，dA/dt :反應 速度，K1、K2 :成爲溫度函數的係數’ Q :直到任意時刻 的發熱量，Q0 :直到反應終了時的總發熱量，N、M、Ka 、Ea、Kb、Eb :材料固有的係數，dQ/dt :發熱速度。 ◎黏度式 77 = 77 0 ( (1 +a/agel ) / ( 1-a/agel) ) Η ··· ( 6 ) 7? 0 = a · exp ( b/T ) ··· ( 7 ) H = f/T-g …（8 ) 此處，n :黏度，a :反應率，T :樹脂溫度，agel : 膠化反應率，a、b、f、g:材料固有的常數。 使用本解析手法，算出粒子1的捕捉率。另外，粒子 1的捕捉率ε ( %)爲連接成形前電極4、6間存在之樹脂 膜材料中之粒子數Ν1、與成形後電極4、6間夾住之粒子 數Ν2之比率以式（9)算出* £ =Ν2/Ν 1x100 ... r -20- s; 201215504 粒子1之捕捉率的解析結果示於圖3、4、5、6。 圖3爲對於各電極形狀，比較樹脂膜之全體厚度設置 粒子1時之粒子1的捕捉率，圖4爲對於各電極形狀’比 較粒子設置層之厚度爲4μιη時之粒子1的捕捉率’圖5爲 對於各電極形狀，比較粒子設置層之厚度爲6μιη時之粒子 1的捕捉率，圖6爲對於各電極形狀，比較粒子設置層之 厚度爲8μιη時之粒子1的捕捉率。如此，依據各電極形狀 ，使得粒子捕捉率爲不同，但粒子設置層的厚度愈小則粒 子1的捕捉率愈高。 樹脂膜片之樹脂材料，可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中，視 需要，分散導電性粒子者。 圖7爲對於形狀（1)，於第2層設置之粒子設置層 厚度爲8μιη之情形中，上方電極4與下方電極6間之距離 爲14μιη之X方向的樹脂流動速度分佈，以線表示比率（ ΧΖ平面）。此速度分佈之比率爲以X方向之速度最大値 爲1之情形的比率予以描線。 樹脂膜片之樹脂材料，可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中，視 需要，分散導電性粒子者。 如此，X方向之速度分佈比率爲最大値者，係在於上 方電極4與下方電極6間之厚度尺寸的中心部分附近。因 此’ X方向的樹脂流動速度爲最大，在粒子1易由電極4 、6間自X正方向排出之厚度方向的中心部分，未設置內 -21 - 201215504 含粒子1的導電層，並且以設置未內含粒子1之絕緣層的 構造，則可提高粒子1的捕捉率· 即，如圖12所示般，對於2層構造之樹脂膜片，將 未內含粒子1的絕緣層，在樹脂膜的任意複數處所，於厚 度尺寸中心點所構成面7的部分、或厚度尺寸中心點所構 成面7之鄰接層所設置的構造，係有效於提高粒子1的捕 捉率。 樹脂膜片之樹脂材料，可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中，視 需要，分離導電性粒子者。 又，如圖13所示般，於使用3層構造之樹脂膜片之 情形中，在樹脂膜的任意複數處所，於厚度尺寸中心點所 構成面7之部分，設置未內含粒子1之絕緣層的構造，則 可提高粒子捕捉率。 樹脂膜片之樹脂材料，可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中，視 需要，分散導電性粒子者。 又，如圖14所示般，於使用4層構造之樹脂膜片之 情形中，在樹脂膜的任意複數處所，於厚度尺寸中心點所 構成面7之部分，設置未內含粒子1之絕緣層的構造，則 可提高粒子捕捉率。又，進一步，使用具備多層樹脂膜層 構造之樹脂膜片之情形亦同樣。 樹脂膜片之樹脂材料，可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中，視 -22- a 201215504 需要，分散導電性粒子者。 另外，關於厚度方向以2層以上層合所構成之內含粒 子的樹脂膜片，於製造時在層間厚度比有發生偏差之情形 。因此，關於厚度方向以2層以上層合所構成之內含粒子 的樹脂膜片，在樹脂膜片的任意複數處所，於厚度尺寸中 心點所構成面7至樹脂膜厚度之±5%以內範圍中，設置未 配置粒子之絕緣層構造亦可，故在樹脂膜片的任意複數處 所，將厚度尺寸中心點所構成面7鄰接的樹脂膜層’作成 未內含粒子1的絕緣層亦可。 此處，如圖3~6所示般，藉由減薄設置粒子1之膜層 厚度，則可在速度最大之上方電極4與下方電極6間之厚 度方向之中心部分遠離處所設置粒子’故粒子的捕捉率變 高。 本解析中，將內含粒子1的樹脂膜層厚度設定爲4、6 、8 μιη進行檢討，但爲了提高粒子1的捕捉率’如圖3〜6 所示般，必須縮小粒子設置層的厚度’期望縮小厚度直到 與粒子1的直徑相等。但’於製造具有與粒子1直徑相等 厚度之樹脂膜的情形中’由於粒子1由樹脂膜材料中露出 ，故若以製造裝置之裝置設定誤差’使設置粒子1之膜厚 度比粒子1之直徑更小，則發生粒子1變形的問題等之製 造上的問題。 因此，2層中僅1層樹脂膜層設置粒子1之2層樹脂 膜片中，粒子設置層的厚度期望爲粒子1之直徑+10%以下 。以上，雖然示出關於2層層合所構成之樹脂膜材料的檢 -23- 201215504 討結果，但本發明並非限定於此，關於3層、4層或更多 層的樹脂膜片亦可應用。 樹脂膜片之樹脂材料，可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中，視 需要，分散導電性粒子者。 其一例，以3層層合所構成之樹脂膜材料，進行3層 中，於上方電極4與下方電極6連接層之樹脂膜中設置粒 子1時的解析檢討。解析所用之形狀爲與圖2所示之電極 形狀（1)相同，且粒子設置層的厚度上下均爲4μηι進行 檢討。設置之粒子1數爲400個。又，樹脂膜層的物性値 於3層同爲表1之値。 解析結果爲將上下電極4、6之距離爲14 μιη之X方 向之速度分佈（ΧΖ平面）的比率以線表示，同時將粒子 捕捉率的計算結果示於圖9。如此，ΧΖ平面中之X方向 的速度於上下電極間厚度方向之大約中心部分（未設置粒 子1的部分）爲最大，3層樹脂膜中，於上方電極4與下 方電極6連接層之樹脂膜中設置粒子1時之粒子捕捉率， 亦可髙於圖3所示形狀（1)之膜厚度全體設置粒子1之 情形。 又，粒子設置層之厚度爲薄之情形中，因爲可於X方 向速度最大之電極間厚度方向之由中心部分遠離處設置粒 子1，故可提高粒子捕捉率。因此，使用3層樹脂膜材料 之情形中，亦期望膜厚度方向之最上方與最下方之粒子設 置層厚度與2層膜之情形相同，爲粒徑+ 1 〇%以下。 -24- S] 201215504 以上，示出關於內含粒子之導電層設置位置之樹脂膜 片構造，但亦可適用於使用本樹脂膜片予以電連接的電子 零件。以上，示出厚度方向之2層或3層層合構造之情形 ，但本發明不被限定於此，可使用於層合2層以上之多層 層合構造的樹脂膜片。 樹脂膜片之樹脂材料，可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中，視 需要，分散導電性粒子者。 如圖4、5、6所示般，於圖2之第1層或第2層任一 者設置粒子1時可提高粒子捕捉率，但根據電極形狀而異 。此處，將各電極形狀以（第1層設置粒子1時之粒子捕 捉率）/(第2層設置粒子1時之粒子捕捉率）爲縱軸進 "ΓΤ處理之結果不於圖9。 另外，（第1層設置粒子1時之粒子捕捉率）/(第2 層設置粒子1時之粒子捕捉率）爲大於1之情形中，第1 層設置粒子1時爲提高粒子捕捉率的形狀，（第1層設置 粒子1時之粒子捕捉率）/(第2層設置粒子1時之粒子 捕捉率）爲小於1之情形中，第2層設置粒子1時爲提高 粒子捕捉率的形狀。 此處，如圖1所示般，將欲接續之1對電極高度和視 爲HI ( =HU + Hs)，電極4、6寬之平均値視爲Wl，X方 向之正和負側設置之電極4的間隔（間距）視爲W2，粒 徑視爲H2之情形中， 以（（W2-W1 ) X ( H1+H2) 3) / ( WlxH23)作爲橫 -25- 201215504 軸，且以（第1層設置粒子時之捕捉率）/(第2層設置 粒子時之捕捉率）作爲縱軸並且整理之結果示於圖10。 如此’使用2層樹脂膜片之情形中，根據電極形狀所 決定，例如，由（（W2-W1) x( HI +H2 ) 3 ) / ( W1XH23 )之値，若於第1層或第2層任一層設置粒子，則可令提 高粒子捕捉率明確化。Kl=Ka exp ( -Ea/T ) (2) K2 = Kb exp ( -Eb/T) ··· ( 3 ) a = Q/Q0 (4) dQ/dt = Q0 ( Kl+K2aM ) ( 1-a) N (5) where a: reaction rate, t: time, T: temperature, dA/dt: reaction rate, K1, K2: coefficient as a function of temperature 'Q: calorific value until any time , Q0 : total heat generation until the end of the reaction, N, M, Ka, Ea, Kb, Eb: the inherent coefficient of the material, dQ / dt: heating rate. ◎Viscosity type 77 = 77 0 ( (1 + a/agel ) / ( 1-a/agel) ) Η ··· ( 6 ) 7? 0 = a · exp ( b/T ) ··· ( 7 ) H = f/Tg (8) Here, n: viscosity, a: reaction rate, T: resin temperature, agel: gelation reaction rate, a, b, f, g: a material inherent constant. The capture rate of the particles 1 was calculated using this analysis method. Further, the capturing ratio ε (%) of the particles 1 is a ratio of the number of particles Ν1 in the resin film material existing between the electrodes 4 and 6 before the forming, and the number of particles Ν2 sandwiched between the electrodes 4 and 6 after forming ( 9) Calculate * £ = Ν 2 / Ν 1x100 ... r -20- s; 201215504 The analysis result of the capture rate of the particle 1 is shown in Figs. 3, 4, 5, and 6. 3 is a graph showing the capture ratio of the particles 1 when the particles 1 are provided over the entire thickness of the resin film for each electrode shape, and FIG. 4 is a graph showing the capture ratio of the particles 1 when the thickness of the particle-providing layer is 4 μm for each electrode shape. 5 is a capture ratio of the particles 1 when the thickness of the particle-providing layer is 6 μm for each electrode shape, and FIG. 6 is a capture ratio of the particles 1 when the thickness of the particle-providing layer is 8 μm for each electrode shape. Thus, the particle trapping rate is different depending on the shape of each electrode, but the smaller the thickness of the particle-setting layer, the higher the trapping rate of the particle 1. The resin material of the resin film can be used for the adhesive composition containing an epoxy resin, a latent curing agent for an epoxy resin, and a phenoxy resin, and if necessary, the conductive particles are dispersed. 7 is a resin flow velocity distribution in the X direction in which the distance between the upper electrode 4 and the lower electrode 6 is 14 μm in the case where the particle layer thickness of the second layer is set to 8 μm for the shape (1), and the ratio is represented by a line. (ΧΖ plane). The ratio of the velocity distribution is plotted as the ratio of the maximum velocity 値 in the X direction to 1. The resin material of the resin film can be used for the adhesive composition containing an epoxy resin, a latent curing agent for an epoxy resin, and a phenoxy resin, and if necessary, the conductive particles are dispersed. Thus, the speed distribution ratio in the X direction is the largest, which is in the vicinity of the center portion of the thickness dimension between the upper electrode 4 and the lower electrode 6. Therefore, the flow velocity of the resin in the X direction is the largest, and the conductive layer containing the particles 1 is not provided in the center portion of the thickness direction in which the particles 1 are easily discharged from the positive direction of the X between the electrodes 4 and 6, and is set. The structure in which the insulating layer of the particle 1 is not contained can increase the capturing ratio of the particle 1 . That is, as shown in FIG. 12 , the insulating layer containing the particle 1 is not contained in the resin film of the two-layer structure. The structure provided in any of the plural spaces of the film, the portion of the surface 7 formed by the center point of the thickness dimension, or the adjacent layer of the surface 7 formed by the center point of the thickness dimension is effective for increasing the capturing ratio of the particles 1. The resin material of the resin film can be used as an adhesive composition for a latent curing agent containing an epoxy resin or an epoxy resin and a phenoxy resin, and if necessary, the conductive particles are separated. Further, as shown in FIG. 13, in the case of using a resin film having a three-layer structure, in any of a plurality of places of the resin film, an insulating layer containing no particles 1 is provided in a portion of the surface 7 formed by the center point of the thickness dimension. The structure of the layer increases the particle capture rate. The resin material of the resin film can be used for the adhesive composition containing an epoxy resin, a latent curing agent for an epoxy resin, and a phenoxy resin, and if necessary, the conductive particles are dispersed. Further, as shown in FIG. 14, in the case of using a resin film having a four-layer structure, in any of a plurality of places of the resin film, an insulating layer containing no particles 1 is provided in a portion of the surface 7 formed by the center point of the thickness dimension. The structure of the layer increases the particle capture rate. Further, the same applies to the case of using a resin film having a multilayer resin film layer structure. The resin material of the resin film can be used as an adhesive composition for a latent curing agent containing an epoxy resin or an epoxy resin and a phenoxy resin, and the conductive particles are dispersed as required by -22-a 201215504. Further, the resin film containing the particles which are formed by laminating two or more layers in the thickness direction may have a variation in the interlayer thickness ratio at the time of production. Therefore, the resin film sheet containing the particles contained in two or more layers in the thickness direction is within a range of ±5% of the thickness of the surface 7 of the thickness of the resin film at any of the plurality of positions of the resin film. In addition, the insulating layer structure in which the particles are not disposed may be provided. Therefore, the resin film layer 'adjacent to the surface 7 formed by the center point of the thickness dimension may be an insulating layer not containing the particles 1 in any plural number of the resin film sheets. Here, as shown in FIGS. 3 to 6, by thinning the thickness of the film layer of the particles 1, it is possible to provide particles at a center portion in the thickness direction between the upper electrode 4 and the lower electrode 6 at the highest speed. The capture rate of particles becomes high. In this analysis, the thickness of the resin film layer containing the particles 1 is set to 4, 6, and 8 μm, but in order to increase the capture ratio of the particles 1 as shown in FIGS. 3 to 6, it is necessary to reduce the thickness of the particle-setting layer. 'It is desirable to reduce the thickness until it is equal to the diameter of the particle 1. However, in the case of producing a resin film having a thickness equal to the diameter of the particle 1, since the particle 1 is exposed from the resin film material, the film thickness of the set particle 1 is larger than the diameter of the particle 1 by the device setting error of the manufacturing apparatus. Smaller, there is a problem in manufacturing such as the problem of deformation of the particles 1. Therefore, in the two-layer resin film in which only one resin film layer of the two layers is provided with the particles 1, the thickness of the particle-setting layer is desirably +10% or less of the diameter of the particle 1. As described above, the results of the inspection of the resin film material composed of the two-layer laminate are shown in -23-201215504, but the present invention is not limited thereto, and the resin film of 3 layers, 4 layers or more may be applied. . The resin material of the resin film can be used for the adhesive composition containing an epoxy resin, a latent curing agent for an epoxy resin, and a phenoxy resin, and if necessary, the conductive particles are dispersed. In one example, the resin film material composed of three layers is laminated and analyzed in the case where the particles 1 are provided in the resin film of the connection layer between the upper electrode 4 and the lower electrode 6 in three layers. The shape used for the analysis was the same as that of the electrode shape (1) shown in Fig. 2, and the thickness of the particle-setting layer was 4 μm above and below. The number of particles set is 400. Further, the physical properties of the resin film layer were the same as those in Table 1 in the three layers. As a result of the analysis, the ratio of the velocity distribution (ΧΖ plane) in the X direction in which the distance between the upper and lower electrodes 4 and 6 is 14 μm is indicated by a line, and the calculation result of the particle capturing ratio is shown in Fig. 9 . Thus, the velocity in the X direction in the pupil plane is approximately the center portion (the portion where the particle 1 is not provided) in the thickness direction between the upper and lower electrodes, and the resin film in the layer connecting the upper electrode 4 and the lower electrode 6 in the three resin films. The particle capture ratio when the particle 1 is placed may be set to the case where the particle 1 is provided in the entire film thickness of the shape (1) shown in Fig. 3 . Further, in the case where the thickness of the particle-setting layer is thin, since the particle 1 can be provided away from the center portion in the thickness direction between the electrodes having the largest X-direction velocity, the particle capturing ratio can be improved. Therefore, in the case of using a three-layer resin film material, it is also desirable that the thickness of the uppermost and lowermost particles of the film thickness direction is the same as that of the two-layer film, and the particle diameter is + 1 〇% or less. -24-S] 201215504 or more, the resin film structure of the conductive layer in which the particles are contained is shown, but it can also be applied to an electronic component which is electrically connected using the resin film. In the above, a two-layer or three-layer laminated structure in the thickness direction is shown. However, the present invention is not limited thereto, and a resin film for laminating two or more layers of a laminated structure can be used. The resin material of the resin film can be used for the adhesive composition containing an epoxy resin, a latent curing agent for an epoxy resin, and a phenoxy resin, and if necessary, the conductive particles are dispersed. As shown in Figs. 4, 5, and 6, when the particles 1 are provided in either the first layer or the second layer of Fig. 2, the particle capturing ratio can be increased, but it varies depending on the shape of the electrode. Here, the shape of each electrode is (the particle capturing ratio when the particles 1 are placed in the first layer) / (the particle capturing ratio when the particles are placed in the second layer) as the vertical axis. The result of the treatment is not shown in Fig. 9 . In addition, in the case where (the particle capture ratio when the particle 1 is set in the first layer) / (the particle capture ratio when the particle 2 is set in the second layer) is greater than 1, the shape of the first layer is set to increase the particle capture rate. In the case where (the particle capturing ratio when the particle 1 is placed in the first layer) / (the particle capturing ratio when the particle 2 is set in the second layer) is less than 1, the particle is set to have a shape of the particle capturing rate when the particle 1 is provided in the second layer. Here, as shown in FIG. 1, the height of the pair of electrodes to be connected is regarded as HI (=HU + Hs), and the average 値 of the widths of the electrodes 4 and 6 is regarded as W1, and the electrodes of the positive and negative sides of the X direction are disposed. The interval (pitch) of 4 is regarded as W2, and the case where the particle diameter is regarded as H2, ((W2-W1) X (H1+H2) 3) / (WlxH23) is used as the horizontal -2515th axis, and The capture rate at the time of setting the particles in one layer) / (the capture ratio at the time of setting the particles in the second layer) is shown in Fig. 10 as the vertical axis and the result of the finishing. In the case where the two-layer resin film is used, it is determined by the shape of the electrode, for example, by ((W2-W1) x( HI + H2 ) 3 ) / ( W1XH23 ), if it is on the first layer or the second layer By setting particles in any layer of the layer, the particle capture rate can be improved.

I 即，例如，於（（W2-W1) x(Hl+H2) 3) / (wix H23 )之値爲未滿50之情形中，於電極高度高之電極4反 側之電極6側的膜層設置粒子1，且（（W2-W1 ) X ( H1+H2 )3)/( WlxH23 )之値爲90以上之情形中，藉由 在電極高度高之電極4側的膜層設置粒子1，以可提高粒 子1的捕捉率般，使用適合電子構件之電極形狀或電極構 造的樹脂膜片。 樹脂膜片之樹脂材料，視需要可使用於含有環氧樹脂 、環氧樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物 中，分散導電性粒子者。 電極形狀，例如，於（（W2-W1 ) X ( H1+H2 ) 3 ) / ( WlxH23 )之値爲90以上之情形中，在使用2層樹脂膜片 之連接成形的前階段，於電極高度高之電極4側的膜層， 設置粒子1且連接成形的電子零件，可提高粒子捕捉率。 以各電極形狀之（電極間距）/(電極高度）爲橫軸 ，以（第1層設置之捕捉率）/(第2層設置之捕捉率） 爲縱橫且整理之結果示於圖24。 如此，（電極間距）/(電極高度）爲〇 · 7以上時，在 -26- 201215504 使用2層樹脂膜片之連接成形的前階段’於電極高度高之 電極4側的膜層’設置粒子1且連接成形的電子零件’可 提高粒子捕捉率。 此處，於使用圖2之電極形狀（1)之情形中’將2 層樹脂膜全體之厚度變更成10、12、14' 16 μηι進行檢討 β另外，設置粒子1之層厚度變更成4、6、8μιη’並且對 於全部層，樹脂材料之物性値爲以發熱反應式及黏度式爲 根據式（1) ~(8) ’且各參數爲使用表1之値。 粒子捕捉率之結果示於圖1 1。與圖3~6所示之結果同 樣地，粒子1之設置層厚度小之情形中’可提高粒子捕捉 率。更且，樹脂膜全體之厚度若小’則可提高粒子1的捕 捉率。另外，樹脂膜全體之厚度若大，粒子捕捉率變低者 ，則樹脂及粒子朝向圖1所示之Υ方向的排出量變多。 於前述段落〔0180〕中，記載粒子設置層的厚度期望 爲粒子1之直徑+10%以下，但是使粒子與膜厚大約相等上 ，必須抑制膜厚的偏差，並且使粒子不會由膜中突出，膜 製造費用有變高之情形。 因此，如圖11所示般，於期望粒子的捕捉率可高至 3 0%以上，並且因電極門所捕捉之粒子數提高而減低費用 上，膜全體的最期望厚度爲上述粒子1之直徑+10%以下， 其次期望膜厚爲粒子之6/4=1.5倍以下，再次期望厚度爲 8/4 = 2倍以下。 以上，雖然示出關於2層層合所構成之樹脂膜材料的 檢討結果，但本發明並非僅限定於此，於3層、4層或更 -27- 201215504 多層之樹脂膜片亦可適用。 又，粒子設置層的厚度與未設置粒子層厚度的比率， 期望如圖11所示般，粒子捕捉率可高至48%以上之NCF 層厚度/ ACF層厚度=6/4 = 1.5倍以下。 另外’以膜連接之電極高度高之情形中，必須加大膜 全體的厚度。於此情形中，其次期望之NCF層厚度/ACF 層厚度之比率爲，粒子捕捉率可爲4 5 %以上之NCF層厚度 /ACF層厚度=10/4 = 2.5倍以下。再次期望爲粒子捕捉率可 爲40 %以上之NCF層厚度/ ACF層厚度=12/4 = 3倍以下。 以上，雖然示出關於2層層合所構成之樹脂膜材料的 檢討結果，但本發明並非僅限定於此，於3層、4層或更 多層之樹脂膜片亦可適用。 因此，於提高粒子捕捉率上，必須縮小樹脂膜全體的 厚度，但若考慮樹脂膜與電極4的接黏強度，則在圖1所 示之XZ平面的剖面中，充滿樹脂材料的份量必須爲最低 〇 此處，根據上方電極4的移動，圖1所示之XZ平面 中充滿樹脂材料之樹脂膜最低厚度Hmin如圖1所示般， 欲連接之1對電極高度和爲Hl( =HU + Hs)，電極4、6 之寬的平均値爲W 1，X方向之正和負側設置之電極4間 隔（間距）爲W2之情形中，以式（9 )表示。I is, for example, a film on the side of the electrode 6 on the opposite side of the electrode 4 having a high electrode height in the case where ((W2-W1) x(Hl+H2) 3) / (wix H23 ) is less than 50 値In the case where the layer 1 is provided with particles, and ((W2-W1) X ( H1+H2 ) 3) / ( WlxH23 ) is 90 or more, the particles 1 are provided on the film layer on the side of the electrode 4 having a high electrode height, A resin film suitable for the electrode shape or electrode structure of the electronic member is used in order to increase the capturing ratio of the particles 1. The resin material of the resin film may be used to disperse conductive particles in an adhesive composition containing a latent curing agent for epoxy resin or epoxy resin and a phenoxy resin. The shape of the electrode, for example, in the case where ((W2-W1) X ( H1+H2 ) 3 ) / ( WlxH23 ) is 90 or more, in the front stage of the connection forming using the two-layer resin film, at the electrode height The film layer on the side of the high electrode 4 is provided with the particles 1 and connected to the formed electronic component, thereby improving the particle trapping rate. The (electrode pitch) / (electrode height) of each electrode shape is plotted on the horizontal axis, and the (capture rate set by the first layer) / (the capture rate of the second layer is set) is vertical and horizontal, and the result of the alignment is shown in FIG. When the (electrode pitch) / (electrode height) is 〇·7 or more, the particles are provided in the film layer of the electrode 4 side having a high electrode height in the pre-stage of the connection molding using the two-layer resin film in -26-201215504. 1 and connecting the formed electronic parts 'can increase the particle capture rate. Here, in the case of using the electrode shape (1) of FIG. 2, 'the thickness of the entire two resin films is changed to 10, 12, 14' 16 μm, and the thickness of the layer 1 is changed to 4, 6, 8μιη' and for all the layers, the physical properties of the resin material are based on the heat-generating reaction type and the viscosity type according to the formulas (1) to (8)' and the parameters are as shown in Table 1. The results of the particle capture rate are shown in Figure 11. Similarly to the results shown in Figs. 3 to 6, in the case where the thickness of the layer 1 of the particles 1 is small, the particle trapping rate can be improved. Further, if the thickness of the entire resin film is small, the catching ratio of the particles 1 can be improved. When the thickness of the entire resin film is large and the particle trapping rate is low, the amount of discharge of the resin and the particles in the Υ direction shown in FIG. 1 increases. In the above paragraph [0180], it is described that the thickness of the particle-setting layer is desirably +10% or less of the diameter of the particle 1, but the particle thickness is approximately equal to the film thickness, and it is necessary to suppress variations in film thickness and prevent the particles from being in the film. Prominent, film manufacturing costs have become higher. Therefore, as shown in FIG. 11, the capture ratio of the desired particles can be as high as 30% or more, and the maximum desired thickness of the entire film is the diameter of the above-mentioned particles 1 because the number of particles captured by the electrode gate is increased and the cost is reduced. +10% or less, the film thickness is preferably 6/4 = 1.5 times or less of the particles, and the thickness is desirably 8/4 = 2 times or less. As described above, the results of the review of the resin film material composed of the two-layer laminate are shown, but the present invention is not limited thereto, and a resin film of three layers, four layers or more -27 to 201215504 may be applied. Further, the ratio of the thickness of the particle-setting layer to the thickness of the particle layer is not required, and as shown in Fig. 11, the NCF layer thickness/ACF layer thickness of the particle capturing ratio can be as high as 48% or more = 6/4 = 1.5 times or less. Further, in the case where the height of the electrode to be connected by the film is high, it is necessary to increase the thickness of the entire film. In this case, the ratio of the thickness of the NCF layer/the thickness of the ACF layer which is expected next is such that the NCF layer thickness / ACF layer thickness = 10/4 = 2.5 times or less of the particle capturing ratio of 45 % or more. It is again expected that the NCF layer thickness/ACF layer thickness = 12/4 = 3 times or less of the particle capturing ratio of 40% or more. As described above, the results of the review of the resin film material composed of the two-layer laminate are shown. However, the present invention is not limited thereto, and a resin film of three, four or more layers may be applied. Therefore, in order to increase the particle trapping rate, it is necessary to reduce the thickness of the entire resin film. However, considering the bonding strength between the resin film and the electrode 4, the portion of the XZ plane shown in Fig. 1 must be filled with the resin material. At the lowest point, according to the movement of the upper electrode 4, the minimum thickness Hmin of the resin film filled with the resin material in the XZ plane shown in Fig. 1 is as shown in Fig. 1, and the height of the pair of electrodes to be connected is H1 (=HU + Hs), in the case where the average 値 of the widths of the electrodes 4 and 6 is W 1, and the interval (pitch) of the electrode 4 provided on the positive and negative sides in the X direction is W2, it is represented by the formula (9).

Hmin= ( ( W2-W1 ) /W2 ) xHl …（9) 但，於樹脂膜中，因爲需要設置粒子，故可提高粒子 捕捉率之樹脂膜全體的厚度期望爲「Hmin= ( ( W2-W1 ) -28- 201215504 /W2) χΗ1 +粒徑」以下。 因此，以1層以上所構成之內含粒子之樹脂膜材料予 以電連接的電子零件，於連接成形之前階段中以電極間設 置1層以上所構成之內含粒子1的樹脂膜材料全體厚度， 例如，若爲「（（W2-W1) /W2) χΗ1 +粒徑」以下’則以 內含粒子之樹脂膜予以電連接的電子零件，可提高粒子的 捕捉率。 以上，雖於2層以上之樹脂膜材料的粒子設置層、與 未設置粒子之層，示出數層未分割之例，但本發明並非僅 限定於此，可將粒子設置層、和未設置粒子之層分割成2 層以上。 又，以上，雖然使用2層以上之樹脂膜材料的粒子設 置層、與未設置粒子之層的物性値爲完全相同之表1之値 ’但本發明並非僅限定於此，可使用各層不同物性値的樹 脂膜。又，以上’雖示出使用環氧樹脂之解析結果，但本 發明並非僅限定於此，可使用任意的樹脂材料。 以下之檢討中，示出關於成形前電極4、6間存在之 樹脂膜中的粒子1數' 與成形後電極4、6間夾住之粒子1 數之比率所定義的粒子捕捉率可提高之樹脂膜材料的物性 値。 樹脂膜片之樹脂材料’可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中，視 需要，分散導電性粒子者。 關於厚度方向之2層層合所構成的樹脂膜材料，對於 -29- 201215504 2層中僅1層之樹脂膜層中具有設置粒子1之導電層的樹 脂膜材料，使用流動解析進行檢討。電極4、6及樹脂膜 材料之尺寸示於圖15。另外，設定X方向之正、負方向 均對稱的解析模型》 此處，2層樹脂膜內，將連接上方電極4配置之樹脂 膜層定義爲第1層，與下方電極6連接配置之樹脂膜層定 義爲第2層，將粒子設置層（導電層）設置於第2層，且 未內含粒子1之層（絕緣層）設置於第1層，下方電極6 的高度Hs = 0.5pm。 此處，粒徑爲4μιη、粒子設置層的厚度爲8μπι、樹脂 膜全體的厚度一定爲16μιη。又，內含之粒數爲400個。 又，上方電極4之溫度爲歷10秒鐘由25 °C上升至 200 °C，並且藉由此上方電極4的溫度上升而將樹脂膜加 熱。又，上方電極4爲在下方電極6的方向上移動，且初 期之上方電極4的移動速度爲lxl(T3m/s。另外，於流動 解析上使用常用之流體解析軟體。 解析中，考慮初期之上方電極4的移動速度、和樹脂 2的黏度變化並且計算上方電極4的移動速度，粒子1在 樹脂2內以假想的標記粒子型式設置。另外，解析所用之 發熱反應式爲使用式（1)~(5)，黏度式爲使用（6)〜 (8)。此處，關於式（6)〜（8)所示之黏度式係數，於 第2層之導電層使用樹脂材料（1)之値，於第1層之絕 緣層使用樹脂材料（1) (2) (3)三個樹脂材料値。另 —方面，關於式（1)〜（5)所示.之發熱反應式的係數， -30- 201215504 於第1層與第2層之値爲相同使用樹脂材料（Ο之値。 又’樹脂2爲使用熱硬化性樹脂之環氧樹脂’且關於樹脂 (1)〜（3)之物性値（黏度式之係數、發熱反應速度式 之係數、密度、熱傳導率、比熱）示於表1。 -31 - 201215504 1樹脂 (14) .1.0X10« 1200000 15450 5800 2 1^6X10» 〇,99 1w&8xi(T2 4.82 x 103 3.3X103 CM 3 樹脂 (13) CK98 1Λ8Χ10-* 4^2 XUH 3^x10* 0.02 樹脂 I (12) 0.9S 1J8xl(r2 4.82 X10> 3«3xl(P .N a4〇 樹脂 | (11) 098 i^exiir2 4.82 X10> 3JX1CP N 0.10 樹脂 (10) 098 IX8Xl〇-> 4^2 x 10> 3^X10> C4 au 樹脂 ⑼ ass ixaxio*2 4·Β2Χΐ〇3 X3xi(P C4 an 樹脂 丨⑻ 0Μ o.i9xi〇-> 4M2XUP 3JX10* C4 1 1700 3 樹脂 (7) 1.0X10» 68000 15450 7000 3 U6X103 0.98 (ua xio~2 4Λ2Χ10* 3如10> CM 3 樹脂 ⑹ a9B O94X10-2 4^2X103 3*3X10» 3 樹脂 (5) 0^8 1J5XI0-* 4^2X1(P 3JX1CP <s| 3 樹脂 0』8 3.76ΧΚΓ1 4.82 x 101 3JX1(P M 3 樹脂 ⑶ I ! α98 1.88X10-2 4.82 x 101 6.0x10» 3 樹脂 ⑵ α9Β ΙΛ8ΧΚΓ2 1 1 4.82 X 101 1_ 2.0X10* 3 樹脂 (1) 0.98 i^axicr* 4.82X10* 3*3X10* CM 3 5 (B UJ iS -Z 2 〇° a gel . <« JQ M 密度 (kg/m3) 比熱 (J/(kg*K)) 熱傳導率 (W/(m-K)) -32- s; 201215504 使用本解析手法，算出粒子丨的捕捉率。將設定黏度 之時間變化解析所求出的結果，示於圖16。如此，另外， 材料（1)之最低黏度設定成比材料（2)更高1.3倍，比 材料（3 )更低1 .3倍。另外，材料（3 )爲比（1 )之最 低黏度更低，故例如重量平均分子量比（1 )更小。 粒子1之捕捉率的解析結果示於圖1 7，基板4、6間 隔之時間變化示於圖1 8。 如圖17所示般，即使於第1圖絕緣層與第2層導電 層之黏度上加以差異，亦不會於粒子捕捉率上產生差異。 於此粒子捕捉率不會產生差異的理由，使用圖18之結果 予以考察。圖1 8爲示出基板間隔的時間變化，於棋盤間 隔爲與粒徑相等之4μηι之時，決定基板間夾住之粒子數與 粒子的捕捉率。 如圖1 8所示般，棋盤間隔爲與粒徑相等之時間爲約 1.5s。但，如圖16所示般，本次設定之樹脂材料（1)〜（ 3 )的黏度爲以直到1 . 5 s之黏度的時間變化爲相等，並且 僅以最低黏度加以設定差異。因此，由於決定粒子捕捉率 之直到1.5s的黏度變化上不會產生差異，故如圖16所示 般，認爲即使於第1圖絕緣層與第2層導電層之黏度上產 生差異，亦不會在粒子捕捉率上產生差異之結果。 如此，即使於第1層絕緣層與第2層導電層之最低黏 度上產生差異亦無法提高粒子捕捉率。因此’以下在直到 1.5s之連接成形的初期階段中，使用對第1層絕緣層與第 2層導電層之黏度加以差異之材料進行檢討。 -33- 201215504 解析中使用圖1 5之形狀，粒徑爲4μιη，第2層之粒 子設置層（導電層）厚度爲4、6、8μιη三個水準，且樹脂 膜片全體之厚度一定爲16μιη。此處，關於式（6)〜（8) 所示之黏度式，於第2層導電層使用樹脂材料（丨），於 第1層絕緣層使用樹脂材料（1) 、（4)〜（8)。另一方 面’關於式（1) ~(5)所示之發熱反應式，第1層與第2 層之物性値爲相同使用樹脂材料（1)。又，樹脂2爲使 用熱硬化性樹脂之環氧樹脂，關於樹脂（1) ，（4)〜（8 )之物性値（黏度、密度、熱傳導率、比率、發熱反應） 示於表1。 此處，樹脂（4 )爲相比於樹脂（1 )，將25。(：之連接 前黏度設定爲2倍，樹脂（5 )爲相比於樹脂（1 )，將25 °C之連接前黏度設定爲1/1.2倍，樹脂（6)爲相比於樹脂 (1)，將25 °C之連接前黏度設定爲I/2倍，樹脂（7)爲 相比於樹脂（1)，將25 °C之連接前黏度設定爲1/5倍， 樹脂（8)爲相比於樹脂（1)，將25 °C之連接前黏度設定 爲1 /1 0倍。 樹脂膜片之樹脂材料，可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中，分 散導電性粒子者。 又，上方電極4之溫度爲歷10秒鐘由251上升至 200°C，並且上方電極4爲在下方電極6的方向上移動。 初期之上方電極4的移動速度爲lxl(T3in/S。另外，材料 (4)爲比（1)之黏度高，故例如重量平均分子量比（1 -34- 201215504 )更大。 解析所用之樹脂黏度之時間變化的計算結果示於圖1 9 。此處，示出關於樹脂（1) ' (4) 、( 6 ) 、 (8)的黏 度變化，示出時間〇s之黏度爲25 °C之連接成形前的黏度 。如此，藉由在第1層絕緣層使用樹脂（5 )〜（8 )，則 可賦予與第2層導電層所用樹脂（1)之初期狀態的黏度 差。 粒子捕捉率之解析結果示於圖20。若如此於第1層絕 緣層使用樹脂（4)，則絕緣層的黏度比導電層更高，故 藉由基板間壓縮使黏度低的導電層之樹脂材料流動，導電 層之樹脂材料難殘存於基板間，且粒子捕捉率變低。 另一方面，若於第1層絕緣層使用樹脂（5 )〜（8 ) ，則絕緣層的黏度比導電層更低，故藉由基板間壓縮使黏 度低的絕緣層之樹脂材料流動，導電層之樹脂材料易於基 板間殘留，絕緣層與導電層之黏度差愈大則粒子捕捉率愈 高。又，設置粒子之導電層厚度愈小則粒子捕捉率愈高。 如此，關於第1層絕緣層與第2層導電層所用之樹脂 ，於25 °C中之黏度若第1層絕緣層比第2層導電層更低， 則可提高粒子捕捉率。特別’於.25 °C中之黏度若第1層絕 緣層比第2層導電層更低0 · 5倍以下，則可提高粒子捕捉 外 另 ο 率 度 黏 型 轉 迴 之 之內 度’ 黏 於 板 // >二二 鋪 圓 或 板 行 平 用 利 用 使 上 定 孭 態 狀 之 子 粒 含 內 以 爲 層 膜 之 子 粒 含 度 速 切 剪 於 定 測 膜 的 前 形 成 接 連 行 進 中 -35- 201215504 以上，示出關於2層樹脂膜的結果，但本發明並非僅 被限定於此，對於層合2層以上任意之樹脂片可使用。又 ，以上雖進行賦予2層黏度差的檢討，但本發明並非僅被 限定於此，絕緣性樹脂膜層以差示掃描熱量計所測定之發 熱反應速度的最大値，藉由作成比內含導電性粒子之樹脂 膜層更低溫側的構造，則可提高粒子捕捉率。 例如，關於表1所示之樹脂（14 )和樹脂（1 )，對 於第2層（導電層）所用之樹脂（14)、與第1層（絕緣 層）所用之樹脂（1)的發熱反應速度（dQ/dt )，關於升 溫速度5°C/min時之發熱反應速度與樹脂溫度之關係的差 示掃描熱量計的測定結果示於圖21。如此，樹脂（14)於 低樹脂溫度下之反應速度爲最大値。 又，第1層、第2層之黏度均如表1所示般使用相等 値。因此，若以低樹脂溫度下之發熱反應速度爲最大，則 式（6)〜（8)所示之α(反應率）函數之黏度爲在低溫 下變高。因此，第1層絕緣層比第2層導電層之發熱反應 速度的最大値若於更低溫側，則第1層絕緣層比第2層導 電層的黏度更高，即使藉由基板的壓縮亦難以流動，故可 提高粒子的捕捉率。另外.，於發熱反應速度之測定上使用 差示熱計，如圖8所示般，於發熱反應速度與樹脂溫度之 關係中，將發熱反應速度最大値爲位於低溫側的樹脂，使 用於導電層。 其次，根據第1層絕緣層與第2層導電層之熱傳導率 上加以差異時的解析，進行粒子捕捉率的檢討。解析中使 -36- S； 201215504 用圖12之形狀，粒徑爲4μηι，第2層粒子設置層（導電 層）的厚度爲以4、8μιη之二個水準，且樹脂膜片全體之 厚度一定爲1 6μιη。 關於式（1)〜（5)所示之發熱反應式，式（6)〜（8 )所示之黏度式，於第2層導電層中使用表1所示之樹脂 (1 )。於第1層絕緣層中使用關於式（1 )〜（5 )所示之 發熱反應式，式（6)〜（8)所示之黏度式爲與樹脂（1) 相同，但僅熱傳導率爲比樹脂（1 )更低的樹脂（9 )〜（ 13)。樹脂（9)〜（13)之物性値示於表1。另外，材料 (9)〜（13)爲比（1)之熱傳導率低，故配合例如雲母 等之低熱傳導充塡劑。 又，上方電極4之溫度爲歷10秒鐘由25 °C上升至 200°C，上方電極4爲在下方電極6的方向上移動。初期 之上方電極4的移動速度爲lxl0_3m/s。另外，於流動解 析上使用常用之流體解析軟體。 粒子捕捉率之解析結果示於圖22。圖22 (a)爲示出 設置粒子之導電層厚度爲8 μιη之情形，圖22 ( b)爲示出 設置粒子1之導電層厚度爲4μιη之情形的結果。如此，於 第1層絕緣層之熱傳導率爲比第2層導電層之熱傳導率更 低之情形中，可提高粒子捕捉率。此時，於樹脂膜片中由 上方電極4傳熱，若第1層絕緣層之熱傳導率低，則難傳 熱至第2層導電層，故導電層的黏度比絕緣層更高。因此 ，藉由電極間的壓縮，導電層之樹脂難以流動，故可提高 粒子捕捉率。特別，如圖22所示般，若第1層未內含導 -37- 201215504 電粒子之絕緣層的熱傳導率，比第2層內含導電粒子之導 電層更小0.7倍以下，則可提高粒子捕捉率。 又，於設置粒子之導電層厚度爲4μηι之情形中，因爲 第1層熱傳導率低的絕緣層厚度大，故比導電層厚度爲 8μιη之情形難對第2層導電層傳熱，因此提高粒子捕捉率 〇 又，以下雖然示出關於2層層合的樹脂膜片，但本發 明並非僅被限定於此，可使用於2層以上層合之樹脂膜片 。其一例爲關於3層層合的樹脂膜片，示於圖23»此處， 於形成樹脂膜片最外層表面之厚度方向的最上方設置絕緣 層，於最下方設置導電層，於最上方絕緣層與最下層導電 層夾住設置之絕緣層8的熱傳導率，其特徵爲比上述最上 方絕緣層與最下層導電層更低。 因爲此最上方絕緣層與最下層導電層夾住設置之絕緣 層8的熱傳導率低，故難對最下層之導電層傳熱，導電層 的黏度不會下降，藉由電極間的壓縮，導電層樹脂難以流 動，故可提高粒子捕捉率。另外，熱傳導率的測定，係內 含粒子之膜層爲以內含粒子之狀態，使用連接成形前之樹 脂膜，以2 5 °C以下之測定溫度進行。 以上，雖然示出2層以上之樹脂膜材料的粒子設置層 、與未設置粒子之層，於複數層中未分割之例，但本發明 並非僅被限定於此，粒子設置層、與未設置粒子之層可分 割成2層以上。 又，以上，雖然示出使用環氧樹脂之解析結果，但本 -38- 201215504 發明並非僅被限定於此，可使用任意的樹脂材料。 又’以上，雖然個別描述關於粒子設置位置與導電層 與絕緣層的物性値差，但本發明並非僅被限定於此，於厚 度方向層合2層以上樹脂膜層之內含導電性粒子的樹脂膜 片中，由樹脂膜片之兩表面位於等距離之厚度方向的中心 面，鄰接內部含有樹脂膜層或上述厚度方向中心面之至少 一個樹脂膜層，以未內含上述導電性粒子之絕緣性樹脂膜 層所形成的樹脂膜片，於25t中連接成形前之絕緣層黏度 爲比導電層更低，又，絕緣層以差示掃描熱量計所測定之 發熱反應速度的最大値爲比導電層更低溫側，又，絕緣層 的熱傳導率比導電層更低爲其特徵的樹脂膜片亦可使用。 【圖式簡單說明】 圖1爲示出使用含有具導電性之粒子的樹脂材料作爲 解析對象的半導體集成電路（1C)與基板之連接成形步驟 的示意圖。 圖2爲解析中所用的電極形狀。 圖3爲在樹脂膜片之厚度全體設置粒子1時之粒子1 捕捉率的計算結果。 圖4爲粒子設置層厚度爲4μιη時之粒子捕捉率的計算 結果。 圖5爲粒子設置層厚度爲Mm時之粒子捕捉率的計算 結果。 圖6爲粒子設置層厚度爲8μηι時之粒子捕捉率的計算 -39- 201215504 結果。 圖7爲關於形狀（1)，使用2層樹脂膜之連接成形 中，X方向之樹脂流動速度分佈與粒子位置。 圖8爲關於形狀（1)，使用3層樹脂膜之連接成形 中，X方向之樹脂流動速度分佈與粒子位置。 圖9爲各電極形狀之（第1層設置粒子1時之粒子捕 捉率）/(第2層設置粒子1時之粒子捕捉率）的計算結 果。 圖10爲關於第1層設置粒子時之捕捉率/第2層設置 粒子時之捕捉率的計算結果。 圖11爲將2層樹脂膜片全體之厚度以10、12、14、 16μιη變更時之粒子捕捉率的計算結果。 圖12爲關於2層構造之樹脂膜片，於厚度方向之中 心面部分設置未內含粒子之絕緣層的構造。 圖13爲關於3層構造之樹脂膜片，於厚度方向之中 心面部分設置未內含粒子之絕緣層的構造。 圖14爲關於4層構造之樹脂膜片，於厚度方向之中 心面部分設置未內含粒子之絕緣層的構造。 圖15爲解析中所用的電極形狀。 圖16爲關於樹脂（1) (2) (3)之黏度之時間變化 的計算結果。 圖1 7爲在導電層使用樹脂（1 )，在絕緣層使用樹脂 (1 ) ( 2 ) ( 3 )時之粒子捕捉率的計算結果。 圖1 8爲在導電層使用樹脂（1 )，在絕緣層使用樹脂 -40- 201215504 (1 ) ( 2 ) ( 3 )時之棋盤間隔之時間變化的計算結果。 圖19爲關於樹脂（1) (4) (6) (7) (8)之黏度 之時間變化的計算結果。 圖20爲在導電層使用樹脂（1)，在絕緣層使用樹脂 (1) (4) (6) ( 7) (8)時之粒子捕捉率的計算結果 〇 圖21爲關於樹脂（1) (14)之發熱反應速度與樹脂 速度之關係的計算結果。 圖22爲在導電體使用樹脂（1 )，在絕緣層使用樹脂 (9 ) ( 1 0 ) ( 1 1 ) ( 1 2 ) ( 1 3 )時之粒子捕捉率的計算 結果。 圖23爲關於3層構造之樹脂膜片，於最上方之絕緣 層和最下層之導電層所夾住設置之中間層，設置未內含熱 傳導率低之粒子之絕緣層的構造。 圖24爲示出將各電極形狀之（電極間距）/(電極高 度）作爲橫軸，（第1層設置之補足率）/(第2層設置 之補足率）作爲縱軸並且整理之結果圖。 【主要元件符號說明】 1 :導電性粒子 2 :樹脂材料 3:半導體集成電路（1C) 4 :上方電極 5 :基板 -41 - 201215504 6 :下方電極 7:由樹脂膜片之厚度方向中心點所構成之面 8:最上方絕緣層與最下層導電層夾住設置的絕緣層 -42-Hmin=(( W2-W1 ) /W2 ) xHl (9) However, since it is necessary to provide particles in the resin film, the thickness of the entire resin film which can increase the particle capture rate is desirably "Hmin= ( ( W2-W1 ) -28- 201215504 /W2) χΗ1 + particle size" or less. Therefore, in the electronic component in which the resin film material containing the particles composed of one or more layers is electrically connected, the entire thickness of the resin film material containing the particles 1 composed of one or more layers between the electrodes is formed in the stage before the connection molding. For example, in the case of "((W2-W1) /W2) χΗ1 + particle size" or less", the electronic component electrically connected to the resin film containing the particles can increase the particle capture rate. In the above, although the particle-providing layer of the resin film material of two or more layers and the layer in which the particles are not provided are shown as an example in which several layers are not divided, the present invention is not limited thereto, and the particles may be provided with layers and not provided. The layer of particles is divided into two or more layers. In addition, in the above, the particle-forming layer of the resin film material of two or more layers and the physical properties of the layer in which the particles are not provided are completely the same as in Table 1. However, the present invention is not limited thereto, and different physical properties of each layer can be used. A resin film of ruthenium. Further, although the above results show the results of analysis using an epoxy resin, the present invention is not limited thereto, and any resin material can be used. In the following review, the particle capture ratio defined by the ratio of the number of particles 1 in the resin film existing between the electrodes 4 and 6 before molding to the number of particles 1 sandwiched between the electrodes 4 and 6 after molding can be improved. The physical properties of the resin film material. The resin material of the resin film can be used as an adhesive composition for a latent curing agent containing an epoxy resin or an epoxy resin and a phenoxy resin, and if necessary, the conductive particles are dispersed. In the resin film material which is formed by the two-layer lamination in the thickness direction, the resin film material having the conductive layer in which the particles 1 are provided in the resin film layer of only one layer of the -29-201215504 layer is examined by flow analysis. The dimensions of the electrodes 4, 6 and the resin film material are shown in Fig. 15. In addition, an analytical model in which both the positive and negative directions in the X direction are symmetrical is set. Here, the resin film layer in which the upper electrode 4 is connected is defined as the first layer and the resin film is connected to the lower electrode 6 in the two resin films. The layer is defined as the second layer, the particle-setting layer (conductive layer) is placed on the second layer, and the layer (insulating layer) not containing the particles 1 is placed on the first layer, and the height Hs of the lower electrode 6 is 0.5 pm. Here, the particle diameter is 4 μm, the thickness of the particle-setting layer is 8 μm, and the thickness of the entire resin film is always 16 μm. In addition, the number of grains contained therein is 400. Further, the temperature of the upper electrode 4 is raised from 25 ° C to 200 ° C for 10 seconds, and the resin film is heated by the temperature rise of the upper electrode 4 thereby. Further, the upper electrode 4 is moved in the direction of the lower electrode 6, and the initial moving speed of the upper electrode 4 is lxl (T3 m/s. Further, a commonly used fluid analysis software is used for flow analysis. In the analysis, the initial stage is considered. The moving speed of the upper electrode 4 and the viscosity of the resin 2 are changed and the moving speed of the upper electrode 4 is calculated, and the particles 1 are provided in the pseudo-labeled particle pattern in the resin 2. Further, the heat-generating reaction equation used for the analysis is the use equation (1) ~(5), the viscosity type is (6) to (8). Here, regarding the viscosity coefficient shown in the formulas (6) to (8), the resin material (1) is used for the conductive layer of the second layer.値, the resin layer (1) (2) (3) three resin materials 値 are used for the insulating layer of the first layer, and the coefficient of the heat generation reaction formula of the formula (1) to (5) for the other aspect, -30- 201215504 The resin material is used in the same layer as the first layer and the second layer (the resin 2 is an epoxy resin using a thermosetting resin) and the resin (1) to (3) Physical properties (coefficient of viscosity, coefficient of thermal reaction rate, density, thermal conductivity, specific heat) Shown in Table 1. -31 - 201215504 1 Resin (14) .1.0X10« 1200000 15450 5800 2 1^6X10» 〇,99 1w&8xi(T2 4.82 x 103 3.3X103 CM 3 Resin (13) CK98 1Λ8Χ10-* 4 ^2 XUH 3^x10* 0.02 Resin I (12) 0.9S 1J8xl (r2 4.82 X10> 3«3xl (P.N a4〇 resin | (11) 098 i^exiir2 4.82 X10> 3JX1CP N 0.10 resin (10) 098 IX8Xl〇-> 4^2 x 10>3^X10> C4 au Resin (9) ass ixaxio*2 4·Β2Χΐ〇3 X3xi(P C4 an Resin 丨(8) 0Μ o.i9xi〇-> 4M2XUP 3JX10* C4 1 1700 3 Resin (7) 1.0X10» 68000 15450 7000 3 U6X103 0.98 (ua xio~2 4Λ2Χ10* 3如10> CM 3 Resin (6) a9B O94X10-2 4^2X103 3*3X10» 3 Resin (5) 0^8 1J5XI0- * 4^2X1(P 3JX1CP <s| 3 Resin 0』8 3.76ΧΚΓ1 4.82 x 101 3JX1 (PM 3 Resin (3) I ! α98 1.88X10-2 4.82 x 101 6.0x10» 3 Resin (2) α9Β ΙΛ8ΧΚΓ2 1 1 4.82 X 101 1_ 2.0X10* 3 Resin (1) 0.98 i^axicr* 4.82X10* 3*3X10* CM 3 5 (B UJ iS -Z 2 〇° a ge l . <« JQ M Density (kg/m3) Specific heat (J/(kg*K)) Thermal conductivity (W/(m-K)) -32- s; 201215504 Use this analysis method to calculate the particle 丨 capture rate. The result obtained by analyzing the time change of the set viscosity is shown in Fig. 16. Thus, in addition, the minimum viscosity of the material (1) is set to be 1.3 times higher than the material (2) and 1.3 times lower than the material (3). Further, the material (3) has a lower viscosity than (1), and thus, for example, the weight average molecular weight is smaller than (1). The analysis results of the capture ratio of the particles 1 are shown in Fig. 17. The temporal changes of the substrates 4 and 6 are shown in Fig. 18. As shown in Fig. 17, even if the difference between the viscosity of the insulating layer of Fig. 1 and the second conductive layer is different, there is no difference in the particle trapping ratio. The reason why the particle capture rate does not differ is examined using the results of Fig. 18. Fig. 18 is a graph showing the temporal change of the substrate interval. When the checkerboard spacing is 4 μm equal to the particle diameter, the number of particles sandwiched between the substrates and the capture ratio of the particles are determined. As shown in Fig. 18, the checkerboard spacing is equal to the particle size for about 1.5 s. However, as shown in Fig. 16, the viscosity of the resin materials (1) to (3) set this time is equal to the time change of the viscosity up to 1.5 s, and the difference is set only with the lowest viscosity. Therefore, since there is no difference in viscosity change up to 1.5 s in determining the particle trapping rate, as shown in FIG. 16, it is considered that even if there is a difference in the viscosity between the insulating layer of the first insulating layer and the second conductive layer, There is no difference in the particle capture rate. Thus, even if there is a difference in the lowest viscosity between the first insulating layer and the second conductive layer, the particle capturing ratio cannot be improved. Therefore, in the initial stage of joining formation up to 1.5 s, the material which differs in the viscosity of the first insulating layer and the second conductive layer is used for review. -33- 201215504 In the analysis, the shape of Fig. 15 is used, the particle size is 4μιη, and the thickness of the particle layer (conductive layer) of the second layer is three levels of 4, 6, and 8 μm, and the thickness of the entire resin film is 16 μm. . Here, regarding the viscosity type shown in the formulas (6) to (8), a resin material (丨) is used for the second layer conductive layer, and resin materials (1), (4) to (8) are used for the first layer insulating layer. ). On the other hand, regarding the heat generation reaction formula shown by the formulas (1) to (5), the resin material (1) is used in the same manner as the physical properties of the first layer and the second layer. Further, the resin 2 is an epoxy resin using a thermosetting resin, and the physical properties (viscosity, density, thermal conductivity, ratio, and exothermic reaction) of the resins (1) and (4) to (8) are shown in Table 1. Here, the resin (4) is 25 compared to the resin (1). (: The viscosity before joining is set to 2 times, the resin (5) is set to 1/1.2 times the pre-bonding viscosity at 25 °C compared to the resin (1), and the resin (6) is compared to the resin (1) ), the pre-bonding viscosity at 25 °C is set to I/2 times, and the resin (7) is set to 1/5 times the pre-bonding viscosity at 25 °C compared to the resin (1), and the resin (8) is Compared with the resin (1), the pre-bonding viscosity at 25 °C is set to 1 / 10 times. The resin material of the resin film can be used for the latent hardener containing epoxy resin, epoxy resin and phenoxy In the adhesive composition of the base resin, the conductive particles are dispersed. Further, the temperature of the upper electrode 4 is raised from 251 to 200 ° C for 10 seconds, and the upper electrode 4 is moved in the direction of the lower electrode 6. In the initial stage, the moving speed of the upper electrode 4 is lxl (T3in/S. Further, since the material (4) has a higher viscosity than (1), for example, the weight average molecular weight ratio (1 - 34 - 201215504) is larger. The calculation result of the time change of the viscosity is shown in Fig. 19. Here, the viscosity change with respect to the resin (1) '(4), (6), (8) is shown, showing the time 〇s The viscosity is 25 ° C. The viscosity before joining is formed. Thus, by using the resins (5) to (8) in the first insulating layer, the initial state of the resin (1) for the second conductive layer can be imparted. The difference in viscosity is shown in Fig. 20. If the resin (4) is used for the first insulating layer, the viscosity of the insulating layer is higher than that of the conductive layer, so that the viscosity is low by compression between the substrates. When the resin material of the conductive layer flows, the resin material of the conductive layer hardly remains between the substrates, and the particle trapping rate becomes low. On the other hand, if the resin (5) to (8) is used for the first insulating layer, the insulating layer is used. The viscosity is lower than that of the conductive layer, so that the resin material of the insulating layer with low viscosity flows by compression between the substrates, and the resin material of the conductive layer is liable to remain between the substrates. The higher the difference in viscosity between the insulating layer and the conductive layer, the higher the particle capture rate. Moreover, the smaller the thickness of the conductive layer of the particles is, the higher the particle capture rate is. Thus, the viscosity of the resin used in the first insulating layer and the second conductive layer at 25 ° C is the ratio of the first insulating layer. The second layer of conductive layer is lower, which can be improved Sub-capture rate. Especially the viscosity at .25 °C, if the first insulating layer is lower than 0. 5 times lower than the second conductive layer, the particle capture can be improved. Internal degree 'adhesive plate /// > two or two rounding or plate rowing is used to make the grain of the upper fixed state contain the inner layer of the film, and the cutting speed of the film is cut into the continuous formation of the film. -35-201215504 The results of the two-layer resin film are shown, but the present invention is not limited thereto, and any resin sheet of two or more layers may be used. Moreover, although the evaluation of the difference in viscosity between the two layers is performed as described above, the present invention is not limited to this, and the maximum enthalpy of the heat generation reaction rate measured by the differential scanning calorimeter of the insulating resin film layer is made by the ratio The structure of the resin film layer of the conductive particles on the lower temperature side can increase the particle trapping rate. For example, regarding the resin (14) and the resin (1) shown in Table 1, the pyrolysis reaction of the resin (14) used for the second layer (conductive layer) and the resin (1) used for the first layer (insulating layer) The speed (dQ/dt), the measurement result of the differential scanning calorimeter regarding the relationship between the heat generation reaction rate and the resin temperature at a temperature increase rate of 5 ° C/min is shown in Fig. 21 . Thus, the reaction speed of the resin (14) at a low resin temperature is the maximum enthalpy. Further, the viscosity of the first layer and the second layer was equal to that shown in Table 1. Therefore, if the heat generation reaction rate at the low resin temperature is the maximum, the viscosity of the α (reaction rate) function represented by the formulas (6) to (8) becomes high at a low temperature. Therefore, if the maximum thermal reaction rate of the first insulating layer is lower than that of the second conductive layer, the viscosity of the first insulating layer is higher than that of the second conductive layer, even if the substrate is compressed. It is difficult to flow, so the particle capture rate can be increased. In addition, a differential calorimeter is used for the measurement of the calorific reaction rate, and as shown in FIG. 8, in the relationship between the exothermic reaction rate and the resin temperature, the exothermic reaction rate is maximized to be a resin located on the low temperature side, and is used for conduction. Floor. Next, the particle capture ratio was examined based on the analysis of the difference in thermal conductivity between the first insulating layer and the second conductive layer. In the analysis, -36-S; 201215504 has the shape of Fig. 12, the particle size is 4μηι, and the thickness of the second layer particle-setting layer (conductive layer) is two levels of 4, 8 μm, and the thickness of the entire resin film is constant. It is 1 6μιη. With respect to the heat generating reaction formulas represented by the formulae (1) to (5), the viscosity formulas represented by the formulae (6) to (8) are used for the second layer conductive layer using the resin (1) shown in Table 1. The heat generating reaction formulas represented by the formulas (1) to (5) are used in the first insulating layer, and the viscosity formulas represented by the formulas (6) to (8) are the same as those of the resin (1), but only the thermal conductivity is Resin (9)~(13) lower than resin (1). The physical properties of the resins (9) to (13) are shown in Table 1. Further, since the materials (9) to (13) have a lower thermal conductivity than (1), a low heat conduction charging agent such as mica is blended. Further, the temperature of the upper electrode 4 rises from 25 °C to 200 °C for 10 seconds, and the upper electrode 4 moves in the direction of the lower electrode 6. The moving speed of the initial upper electrode 4 is lxl0_3 m/s. In addition, a commonly used fluid analysis software is used for flow analysis. The analysis result of the particle capture rate is shown in Fig. 22. Fig. 22 (a) is a view showing a case where the thickness of the conductive layer of the particles is set to 8 μηη, and Fig. 22 (b) is a result showing a case where the thickness of the conductive layer of the particle 1 is set to 4 μm. Thus, in the case where the thermal conductivity of the first insulating layer is lower than the thermal conductivity of the second conductive layer, the particle trapping rate can be improved. At this time, heat is transferred from the upper electrode 4 to the resin film. If the thermal conductivity of the first insulating layer is low, it is difficult to transfer heat to the second conductive layer, so that the conductive layer has a higher viscosity than the insulating layer. Therefore, the resin of the conductive layer is hard to flow by the compression between the electrodes, so that the particle trapping rate can be improved. In particular, as shown in FIG. 22, if the thermal conductivity of the insulating layer containing the conductive particles of the -37-201215504 in the first layer is 0.7 times or less smaller than the conductive layer containing the conductive particles in the second layer, the thickness can be improved. Particle capture rate. Further, in the case where the thickness of the conductive layer of the particles is set to 4 μm, since the thickness of the insulating layer having a low thermal conductivity of the first layer is large, it is difficult to transfer heat to the second conductive layer even when the thickness of the conductive layer is 8 μm, thereby increasing the particles. In the following, the resin film sheet which is laminated in two layers is shown. However, the present invention is not limited thereto, and can be used for a resin film sheet in which two or more layers are laminated. An example of this is a three-layer laminated resin film, which is shown in Fig. 23»here, an insulating layer is provided at the uppermost portion in the thickness direction of the outermost surface of the resin film, and a conductive layer is provided at the lowermost portion to be insulated at the uppermost portion. The thermal conductivity of the insulating layer 8 disposed between the layer and the lowermost conductive layer is characterized by being lower than the uppermost insulating layer and the lowermost conductive layer. Since the thermal conductivity of the insulating layer 8 sandwiched between the uppermost insulating layer and the lowermost conductive layer is low, it is difficult to transfer heat to the conductive layer of the lowermost layer, the viscosity of the conductive layer is not lowered, and the conduction between the electrodes is conducted. Since the layer resin is difficult to flow, the particle trapping rate can be improved. Further, the measurement of the thermal conductivity is carried out in a state in which the film layer containing the particles is contained in the form of the contained particles, and the resin film before joining is formed at a measurement temperature of 25 ° C or lower. In the above, although the particle-forming layer of the resin film material of two or more layers and the layer in which the particles are not provided are not divided into the plurality of layers, the present invention is not limited thereto, and the particle-setting layer and the un-set are not provided. The layer of particles can be divided into two or more layers. Further, although the results of the analysis using the epoxy resin are shown above, the invention is not limited thereto, and any resin material can be used. Further, although the above describes the difference in physical properties between the particle placement position and the conductive layer and the insulating layer, the present invention is not limited thereto, and two or more layers of the resin film layer are laminated in the thickness direction to contain conductive particles. In the resin film, at least one resin film layer including the resin film layer or the thickness direction center surface is adjacent to the center surface of the resin film sheet in the thickness direction of the equidistant distance, so as not to contain the above-mentioned conductive particles. The resin film formed by the insulating resin film layer has a lower viscosity of the insulating layer before joining and forming in 25t than the conductive layer, and the maximum enthalpy ratio of the heat generating reaction rate measured by the differential scanning calorimeter of the insulating layer is A resin film having a lower temperature side of the conductive layer and a lower thermal conductivity than the conductive layer may also be used. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a step of forming a connection between a semiconductor integrated circuit (1C) and a substrate using a resin material containing conductive particles as a target of analysis. Figure 2 shows the shape of the electrode used in the analysis. Fig. 3 is a calculation result of the particle 1 capture ratio when the particles 1 are provided over the entire thickness of the resin film. Fig. 4 is a graph showing the calculation results of the particle capturing ratio when the particle layer thickness is 4 μm. Fig. 5 is a calculation result of the particle capturing ratio when the particle layer thickness is Mm. Fig. 6 is a graph showing the calculation of the particle capture ratio when the particle layer thickness is 8 μm. -39 - 201215504. Fig. 7 is a view showing the resin flow velocity distribution and the particle position in the X direction in the connection molding using the two-layer resin film in the shape (1). Fig. 8 is a view showing the resin flow velocity distribution and the particle position in the X direction in the connection molding using the three-layer resin film in the shape (1). Fig. 9 shows the calculation results of the shape of each electrode (the particle trapping rate when the particle 1 is placed in the first layer) / (the particle capturing ratio when the particle 1 is placed in the second layer). Fig. 10 is a calculation result of the capture ratio when the particles are placed in the first layer and the capture rate when the particles are placed in the second layer. Fig. 11 shows the calculation results of the particle capturing ratio when the thickness of the entire two resin sheets was changed by 10, 12, 14, or 16 μm. Fig. 12 shows a structure in which a resin film having a two-layer structure is provided with an insulating layer not containing particles in a central portion of the thickness direction. Fig. 13 is a view showing a structure in which a resin film having a three-layer structure is provided with an insulating layer not containing particles in a central portion of the thickness direction. Fig. 14 is a view showing a structure in which a resin film having a four-layer structure is provided with an insulating layer not containing particles in a central portion of the thickness direction. Figure 15 shows the shape of the electrode used in the analysis. Fig. 16 shows the calculation results of the temporal change in the viscosity of the resin (1) (2) (3). Fig. 17 is a calculation result of the particle capturing ratio when the resin (1) is used for the conductive layer and the resin (1) (2) (3) is used for the insulating layer. Fig. 18 is a calculation result of the time variation of the checkerboard interval when the resin (1) is used for the conductive layer and the resin is used for the insulating layer -40 - 201215504 (1) (2) (3). Fig. 19 shows the calculation results of the temporal changes in the viscosity of the resins (1) (4) (6) (7) and (8). Figure 20 is a calculation result of the particle capture ratio when the resin (1) is used for the conductive layer and the resin (1) (4) (6) (7) (8) is used for the insulating layer. Fig. 21 is for the resin (1) ( 14) Calculation result of the relationship between the heat reaction rate and the resin speed. Fig. 22 shows the calculation results of the particle trapping ratio when the resin (1) is used for the conductor and the resin (9) (10) (1 1 ) (1 2 ) (13) is used for the insulating layer. Fig. 23 shows a structure in which a resin film having a three-layer structure is provided with an intermediate layer sandwiched between the uppermost insulating layer and the lowermost conductive layer, and an insulating layer not containing particles having low thermal conductivity is provided. FIG. 24 is a view showing the result of arranging the electrode shape (electrode pitch) / (electrode height) as the horizontal axis, (the complement ratio of the first layer setting) / (the complement ratio of the second layer setting) as the vertical axis. . [Description of main components] 1 : Conductive particles 2 : Resin material 3 : Semiconductor integrated circuit ( 1C) 4 : Upper electrode 5 : Substrate - 41 - 201215504 6 : Lower electrode 7 : Center point in the thickness direction of the resin film The face 8 of the composition: the insulating layer sandwiched between the uppermost insulating layer and the lowermost conductive layer-42-

Claims (1)

201215504 七、申請專利範園： 1· 一種樹脂膜片，其係具備內含導電性粒子之樹脂膜 層及絕緣性之樹脂膜層各層之至少一層，於厚度方向上層 合2層以上的樹脂膜片，其特徵係前述絕緣性之樹脂膜層 內含有由該樹脂膜片之兩表面起算之距離相等位置上之厚 度方向的中心面，前述樹脂膜片的厚度爲10〜16μιη的範圍 0 2. 如申請專利範圍第1項之樹脂膜片，其中前述內含 導電性粒子之樹脂膜層係藉由使前述導電性粒子分散於接 著性組成物的混合液塗佈於支持基材上，除去溶劑而得。 3. 如申請專利範圍第1或2項之樹脂膜片，其中前述內 含導電性粒子之樹脂膜層之厚度方向的厚度，設定爲比前 述導電性粒子之粒徑更大，且比前述導電性粒子之粒徑的 2倍更小。 4. 如申請專利範圍第1或2項之樹脂膜片，其中前述內 含導電性粒子之樹脂膜層之厚度方向的厚度，設定爲比前 述導電性粒子之粒徑更大，且比前述導電性粒子之粒徑的 1 . 5倍更小。 5 .如申請專利範圍第1或2項之樹脂膜片，其中前述內 含導電性粒子之樹脂膜層之厚度方向的厚度，設定爲比前 述導電性粒子之粒徑更大，且比前述導電性粒子之粒徑的 1.1倍更小。 6.如申請專利範圍第1〜5項中任一項之樹脂膜片，其 中前述絕緣性之樹脂膜層之厚度方向的厚度，設定爲前述 -43- 201215504 內含導電性粒子之樹脂膜層之厚度方向的厚度之1.5倍以 上。 7. 如申請專利範圍第1〜5項中任一項之樹脂膜片，其 中前述內含導電性粒子之樹脂膜層之厚度方向的厚度，設 定爲前述內含導電性粒子之樹脂膜層之厚度方向的厚度之 2.5倍以上》 8. 如申請專利範圍第1〜5項中任一項之樹脂膜片，其 中前述絕緣性之樹脂膜層之厚度方向的厚度，設定爲前述 內含導電性粒子之樹脂膜層之厚度方向的厚度之3倍以上 〇 9. 如申請專利範圍第1〜8項中任一項之樹脂膜片，其 中前述內含導電性粒子之樹脂膜層之厚度方向的厚度爲4 〜8 μιη。 10. 如申請專利範圍第1〜9項中任一項之樹脂膜片， 其係將內含導電性粒子之樹脂膜層及絕緣性之樹脂膜層之 各層，於厚度方向層合2層的樹脂膜片^ 1 1 .—種電子零件，其特徵係於電極間配置申請專利 範圍第1〜9項中任一項之樹脂膜片，前述電極間經由該樹 脂膜片電連接。 -44-201215504 VII. Patent application: 1. A resin film comprising at least one layer of each of a resin film layer containing conductive particles and an insulating resin film layer, and a resin film of two or more layers laminated in the thickness direction. The sheet is characterized in that the insulating resin film layer contains a center surface in a thickness direction at a position equal to the distance between the two surfaces of the resin film sheet, and the thickness of the resin film sheet is in the range of 10 to 16 μm. The resin film of the first aspect of the invention, wherein the resin film layer containing the conductive particles is coated on a support substrate by dispersing the conductive particles in a mixture of the adhesive composition, and the solvent is removed. And got it. 3. The resin film according to claim 1 or 2, wherein a thickness of the resin film layer containing the conductive particles in the thickness direction is set to be larger than a particle diameter of the conductive particles, and is larger than the conductive material The particle size of the particles is twice as small. 4. The resin film according to claim 1 or 2, wherein a thickness of the resin film layer containing the conductive particles in the thickness direction is set to be larger than a particle diameter of the conductive particles, and is larger than the conductive material The particle size of the particles is 1.5 times smaller. 5. The resin film according to claim 1 or 2, wherein a thickness of the resin film layer containing the conductive particles in the thickness direction is set to be larger than a particle diameter of the conductive particles, and is more conductive than the conductive film. The particle size of the particles is 1.1 times smaller. 6. The resin film according to any one of the first to fifth aspects of the invention, wherein the thickness of the insulating resin film layer in the thickness direction is set to a resin film layer containing conductive particles in the above -43 to 201215504. The thickness in the thickness direction is 1.5 times or more. 7. The resin film according to any one of the first to fifth aspect, wherein the thickness of the resin film layer containing the conductive particles in the thickness direction is set to be the resin film layer containing the conductive particles. The resin film according to any one of the first to fifth aspects of the invention, wherein the thickness of the insulating resin film layer in the thickness direction is set to the above-mentioned internal conductivity. A resin film according to any one of the above-mentioned claims, wherein the resin film layer containing the conductive particles has a thickness direction in the thickness direction of the resin film layer. The thickness is 4 to 8 μιη. 10. The resin film according to any one of the first to ninth aspects of the invention, wherein the resin film layer containing the conductive particles and the insulating resin film layer are laminated in two layers in the thickness direction. The resin film is a resin film according to any one of claims 1 to 9, wherein the electrodes are electrically connected to each other via the resin film. -44-
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