TW201013710A - Resin film sheet having conductive particles and electronic component electrically connected by the same - Google Patents

Resin film sheet having conductive particles and electronic component electrically connected by the same Download PDF

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Publication number
TW201013710A
TW201013710A TW098121389A TW98121389A TW201013710A TW 201013710 A TW201013710 A TW 201013710A TW 098121389 A TW098121389 A TW 098121389A TW 98121389 A TW98121389 A TW 98121389A TW 201013710 A TW201013710 A TW 201013710A
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Taiwan
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resin film
conductive particles
film layer
thickness
particles
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TW098121389A
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Chinese (zh)
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Tsutomu Kono
Koji Kobayashi
Kazuyoshi Kojima
Masayuki Mino
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Hitachi Chemical Co Ltd
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Publication of TW201013710A publication Critical patent/TW201013710A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive

Abstract

The subject of the present invention is to increase the rate of capture of particles on a conductive resin film sheet to thereby achieve cost reduction and enhance conductivity. To solve the problem, the conductive resin film sheet includes two or more of resin film layers having conductive particles therein or of resin film layers having no conductive particles therein, which are laminated in the through-wall direction in order to increase the particle capture rate, which is represented by the ratio of the number of particles included in the resin film existing between pre-shaped electrodes and the number of particles sandwiched between post-shaped electrodes, wherein the resin film layer which includes therein a through-wall center plane located at an equidistance from both surfaces of the resin film sheet or at least one resin film layer adjacent to the through-wall center plane is formed by an insulating resin film layer having no conductive particles therein.

Description

201013710 六、發明說明 【發明所屬之技術領域】 本發明係關於內含導電性粒子之樹脂膜片及以內含導 電性粒子之樹脂膜片進行電連接之電子零件。 在內含具有導電性粒子之樹脂膜材料將電極間連接成 形之前階段中,以夾住內含粒子之樹脂膜材料的狀態,使 電極彼此間的間隔爲分開超過薄膜的厚度,一邊由上方電 φ 極或下方電極對樹脂膜材料加熱,一邊以縮短電極間隔之 壓縮予以連接成形,使內含具有導電性之粒子的樹脂膜材 料流動,並且於連接成形後實施粒子被夾於電極間的步驟 〇 本發明係關於提高連接成形後之電極間的粒子捕捉率 (連接成形前之電極間存在之粒子數與連接成形後之電極 間夾住之粒子數的比率)之內含導電性粒子的樹脂膜片及 以上述樹脂膜片進行電連接的電子零件。 參 【先前技術】 關於異向導電性膜之材料構成的專利文獻,例如,已 知專利文獻1、專利文獻2、專利文獻3。於專利文獻1中 ,揭示關於內含導電性粒子之樹脂膜片的厚度尺寸與粒徑 比率的技術,且示出異向導電膜全體厚度爲粒徑之2倍以 內的材料構成。但是,於實際之連接中,各電極形狀於連 接、接黏所必要之異向導電膜全體厚度爲不同。 又,於專利文獻2中,揭示將異向導電漿料中分散的 -5- 201013710 導電物質密度’於厚度方向變更的技術’示出爲了使導電 物質的密度於厚度方向上變更’乃在液狀的絕緣樹脂中設 置導電粒子,並將導電性漿料於電極上塗佈之狀態下’以 40°C以上且2小時以上之加熱使粒子沈降的連接方法。但 是,實際的連接必須以短時間進行’必須使用固體膜狀態 的異向導電膜。更且,爲了使厚度方向具有粒子分佈,其 有效爲以具有2層以上之膜構造’並且分成設置粒子的導 電層、和未設置粒子的絕緣層構造。 @ 又,專利文獻3爲對於導電層和絕緣層,對熔融黏度 之最低値加以差異的材料構造。但是’於使用實際之樹脂 膜片的連接成形中,因爲使用升溫速度快的條件(17〇 °C /l〇s等),故由最低黏度直到電極間隔爲與粒徑相等爲止 之連接初期狀態的黏度變化爲重要的。 〔先前技術文獻〕 〔專利文獻〕 〔專利文獻1〕特開昭63 - 1 02 1 1 0號公報 _ 〔專利文獻2〕特開平1 0-200243號公報 〔專利文獻3〕特開2005- 1 46044號公報 【發明內容】 〔發明所欲解決之問題〕 將內含具有導電性之樹脂膜材料,設置於欲連接的電 極間,且藉由縮短電極間距離之樹脂膜材料的壓縮,使內 含具有導電性之粒子的樹脂膜材料流動,並於連接成形後 -6 - 201013710 粒子被夾於電極間之連接成形步驟中,使連接成形前存在 於電極間之樹脂膜材料中內含的粒子數、與連接成形後於 電極間被夾住之粒子數的比率所示之粒子捕捉率提高,係 爲減低費用、提高導電性能之課題。 即,若粒子捕捉率低,則電極間被夾住之粒子數變少 ,因而發生連接電極間的導電性能降低,因此必須在初期 狀態使樹脂中內含許多費用高的導電粒子。因此,藉由使 Φ 樹脂膜材料中內含之粒子的配置適切化,則可提高粒子的 捕捉率,但必須減低費用、提高導電性能。 又,使用厚度方向以2層層合構成的樹脂膜材料,且 僅1層之樹脂膜中內含粒子時,由於根據電極形狀,使內 含粒子之樹脂膜層以接觸上方電極或下方電極任一者之狀 態下設置,使得粒子捕捉率爲不同。因此,必須檢討在連 接成形之前階段,若將根據電極形狀內含樹脂膜材料粒子 的樹脂膜層,以接觸上方電極或下方電極任一者設置,是 φ 否可提高粒子的捕捉率。 又,使用厚度方向以2層層合構成的樹脂膜材料,且 僅1層之樹脂膜中內含粒子時,根據構成2層之絕緣層與 導電層之黏度、熱傳導率、發熱速度等之物性値的差’使 得粒子捕捉率爲不同。因此,必須藉由使構成2層之絕緣 層與導電層之材料物性値的差適切化,以圖謀粒子捕捉率 的提商。 (解決問題之手段) 201013710 爲了解決上述問題,本發明中,藉由使用常用的流體 解析程式(FLOW-3D FLOW SCIENCE公司),算出成形 前電極間存在之樹脂膜中內含的粒子數、和成形後電極間 夾住之粒子數之比率所示的粒子捕捉率,並且使樹脂膜材 料中內含之粒子配置、樹脂膜材料之黏度、發熱反應速度 、熱傳導率適切化。 例如,以2層層合所構成之樹脂膜材料,於2層中, 僅1層樹脂膜內含粒子之情形中,選定用以提高粒子捕捉 _ 率之適切的樹脂膜材料全體的厚度、內含粒子之樹脂膜層 的厚度。 本發明之內含導電性粒子的樹脂膜片,其特徵爲內含 導電性粒子之樹脂膜層或未內含導電性粒子之樹脂膜層於 厚度方向層合2層以上,且內部含有由上述樹脂膜片之兩 表面等距離位置之厚度方向之中心面的樹脂膜層或鄰接上 述厚度方向之中心面之至少一個樹脂膜層,係以未內含上 述導電性粒子之絕緣性樹脂膜層所形成。 φ 更且,於連接成形之前階段,若將內含樹脂膜材料粒 子的樹脂膜層,以接觸上方電極或下方電極任一者設置, 則根據電極形狀選定是否可提高粒子的捕捉率。又,使用 於厚度方向以2層層合構成的樹脂膜材料,僅1層之樹脂 膜中內含粒子之情形中,其特徵爲使構成2層之絕緣層與 導電層之黏度、熱傳導率、發熱速度等之物性値有差別。 本發明中分散導電性粒子的接黏劑組成物,可列舉例 如,熱硬化性之接黏劑組成物、光硬化性之接黏劑組成物 -8- 201013710 等。具體而言,例如,可使用含有(1)環氧樹脂及(2) 環氧樹脂之硬化劑的接黏劑組成物、含有(3)自由基聚 合性物質及(4)經由加熱或光發生游離自由基之硬化劑 的接黏劑組成物、含有上述(1 )及(2 )成分之接黏劑組 成物與含有上述(3)及(4)成分之接黏劑組成物的混合 組成物等。 上述成分(1)之環氧樹脂,可列舉例如,雙酚A型 φ 環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、苯酚 酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、雙酚A 酚醛清漆型環氧樹脂、雙酚F酚醛清漆型環氧樹脂、脂環 式環氧樹脂、環氧丙基酯型環氧樹脂、環氧丙基胺型環氧 樹脂、乙內醯脲型環氧樹脂、異氰脲酸酯型環氧樹脂、脂 肪族鏈狀環氧樹脂等。此些環氧樹脂亦可經鹵素化,且亦 可經氫化。又,亦可於環氧樹脂的側鏈附加丙烯醯基或甲 基丙烯醯基。其可單獨或組合使用2種以上。 φ 上述成分(2 )之硬化劑,若可使環氧樹脂硬化者則 無特別限制,可列舉例如,陰離子聚合性之觸媒型硬化劑 、陽離子聚合性之觸媒型硬化劑、加聚型之硬化劑等。其 中,由速硬化性優良、不要考慮化學當量方面而言,以陰 離子或陽離子聚合性之觸媒型硬化劑爲佳。 上述陰離子或陽離子聚合性之觸媒型硬化劑,可列舉 例如,咪唑系、醯肼系、三氟化硼-胺錯合物、鏑鹽、胺 醯亞胺、二胺基馬來醯腈、三聚氰胺及其衍生物、聚胺之 鹽、雙氰胺等,且其變性物等亦可使用。 -9 - 201013710 上述加聚型硬化劑可列舉例如,聚胺類、聚硫醇、聚 酚、酸酐等。 陰離子聚合型之觸媒型硬化劑,例如於配合三級胺類 和咪唑類時,環氧樹脂爲以160°C〜200 °C左右之中溫加熱 數1 〇秒鐘〜數小時左右予以硬化。因此,因爲可使用時間 (使用壽命)變得較長故爲佳。 又,經由能量線照射使環氧樹脂硬化的感光性鑰鹽( 主要使用芳香族重氮鑷鹽、芳香族锍鹽等)亦可適當使用 _ 作爲陽離子聚合型的觸媒型硬化劑。又,除了能量線照射 以外,作爲經由加熱活化使環氧樹脂硬化的陽離子聚合型 之觸媒型硬化劑,例如,有脂肪族锍鹽等。此種硬化劑由 於具有速硬化性之特徵,故爲佳。 將此些環氧樹脂之硬化劑,以聚胺基甲酸酯系、聚酯 系等之高分子物質、鎳、銅等之金屬薄膜、矽酸鈣等之無 機物等被覆之微膠囊化的潛在性硬化劑,因可使用時間延 長故爲佳。 φ 上述環氧樹脂之硬化劑的配合量,於連接時間爲25 秒鐘以下之情形,爲了取得充分的反應率,相對於環氧樹 脂與視需要配合之膜成形材合計100質量份,以1〜50質 量份爲佳。 此些硬化劑可單獨或組合使用2種以上。 上述成分(3)之自由基聚合性物質,例如,若具有 經由自由基進行聚合之官能基的物質,則無特別限制可使 用。具體而言,可列舉例如,丙烯酸酯(亦包含對應之甲 -10- 201013710 基丙烯酸酯,以下相同)化合物、丙烯醯氧基(亦包含對 應之甲基丙烯醯氧基,以下相同)化合物、馬來醢亞胺化 合物、檸康醯亞胺樹脂、萘酚醯亞胺樹脂等。此些自由基 聚合性物質可以單體或低聚物之狀態使用,且亦可倂用單 體與低聚物。 上述丙烯酸酯化合物,可列舉例如,丙烯酸甲酯、丙 烯酸乙酯、丙烯酸異丙酯、丙烯酸異丁酯、乙二醇二丙烯 φ 酸酯、二乙二醇二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、 四羥甲基甲烷四丙烯酸酯、2-羥基-1,3-二丙烯醯氧基丙烷 、2,2-雙〔4-(丙烯醯氧甲氧基)苯基〕丙烷、2,2-雙〔4-(丙烯醯氧聚乙氧基)苯基〕丙烷、二環戊烯基丙烯酸酯 、三環癸基丙烯酸酯、三(丙烯醯氧乙基)異氰脲酸酯、 胺基甲酸酯丙烯酸酯等。又,視需要亦可適當使用氫醌、 甲醚氫醌類等之抑聚劑。又,由提高耐熱性之觀點而言, 以丙烯酸酯化合物等之自由基聚合製物質爲具有至少1種 φ 二環戊烯基、三環癸基、三哄環等之取代基爲佳》 又,於上述自由基聚合性物質倂用具有下述化學式( I)所示之磷酸酯構造的自由基聚合性物質爲佳。此時, 爲了提高對於金屬等之無機物表面的接黏強度,以電路電 極彼此間接黏爲適當。 -11 - 201013710 化1 0 0 ch3 1 i[Technical Field] The present invention relates to a resin film containing conductive particles and an electronic component electrically connected by a resin film containing conductive particles. In the state in which the resin film material having the conductive particles is formed to form the resin film between the electrodes, the interval between the electrodes is separated by more than the thickness of the film while the resin film material containing the particles is sandwiched. When the φ pole or the lower electrode heats the resin film material, the resin film material is connected by compression to shorten the electrode gap, and the resin film material containing the conductive particles is flowed, and the step of sandwiching the particles between the electrodes after the connection molding is performed The present invention relates to a resin containing conductive particles in order to increase the particle capture ratio between the electrodes after the connection molding (the ratio of the number of particles existing between the electrodes before the connection and the number of particles sandwiched between the electrodes after the formation) A diaphragm and an electronic component electrically connected by the above resin film. [Prior Art] Patent Literature 1, Patent Document 2, and Patent Document 3 are known, for example, in the patent document of the material composition of the anisotropic conductive film. Patent Document 1 discloses a technique for determining the ratio of the thickness dimension to the particle diameter of a resin film containing conductive particles, and shows that the entire thickness of the isotropic conductive film is equal to or less than twice the particle diameter. However, in the actual connection, the thickness of each of the opposite-direction conductive films necessary for connecting and bonding the electrodes is different. Further, Patent Document 2 discloses that the technique of changing the density of the -5 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - In the state in which the conductive particles are provided in the insulating resin and the conductive paste is applied onto the electrode, a method of connecting the particles by heating at 40 ° C or more for 2 hours or longer is used. However, the actual connection must be carried out in a short period of time. An anisotropic conductive film in which a solid film state must be used. Further, in order to have a particle distribution in the thickness direction, it is effective to have a film structure having two or more layers and to be divided into a conductive layer in which particles are disposed, and an insulating layer in which particles are not provided. @ Further, Patent Document 3 is a material structure in which the conductive layer and the insulating layer are different in the minimum enthalpy of the melt viscosity. However, in the connection molding using the actual resin film, since the conditions of high temperature rise rate (17 〇 ° C / l 〇 s, etc.) are used, the initial state of connection is selected from the lowest viscosity until the electrode interval is equal to the particle diameter. The viscosity change is important. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] Japanese Laid-Open Patent Publication No. JP-A No. SHO-A No. Hei. SUMMARY OF THE INVENTION [Problem to be Solved by the Invention] A resin film material containing conductivity is provided between electrodes to be connected, and the resin film material is shortened by shortening the distance between electrodes. The resin film material containing the conductive particles flows, and after the connection is formed, the particles are sandwiched between the electrodes in the joining forming step, so that the particles contained in the resin film material existing between the electrodes before the joining are formed The increase in the particle capture ratio, as indicated by the ratio of the number of particles sandwiched between the electrodes after the connection is formed, is a problem of reducing the cost and improving the conductivity. In other words, when the particle trapping rate is low, the number of particles sandwiched between the electrodes is reduced, so that the electrical conductivity between the electrodes is lowered. Therefore, it is necessary to contain a large amount of conductive particles having a high cost in the initial state. Therefore, by arranging the arrangement of the particles contained in the Φ resin film material, the particle capture rate can be improved, but it is necessary to reduce the cost and improve the conductivity. Further, when a resin film material composed of two layers in the thickness direction is used, and only one layer of the resin film contains particles, the resin film layer containing the particles is contacted with the upper electrode or the lower electrode depending on the shape of the electrode. In the state of one, the particle capture rate is different. Therefore, it is necessary to review whether the resin film layer containing the resin film material particles according to the shape of the electrode is placed in contact with either the upper electrode or the lower electrode in the stage before the joining, and it is φ whether the particle capturing ratio can be improved. Further, when a resin film material composed of two layers in the thickness direction is used, and only one layer of the resin film contains particles, the physical properties such as viscosity, thermal conductivity, and heat generation rate of the insulating layer and the conductive layer constituting the two layers are used. The difference in ' makes the particle capture rate different. Therefore, it is necessary to draw the difference in physical properties of the material constituting the two layers of the insulating layer and the conductive layer to map the particle capture rate. (Means for Solving the Problem) 201013710 In order to solve the above problem, in the present invention, the number of particles contained in the resin film existing between the electrodes before molding is calculated by using a commonly used fluid analysis program (FLOW-3D FLOW SCIENCE) The particle capture ratio indicated by the ratio of the number of particles sandwiched between the electrodes after molding, and the particle arrangement contained in the resin film material, the viscosity of the resin film material, the heat generation reaction rate, and the thermal conductivity are appropriately adjusted. For example, in the case where the resin film material composed of two layers is laminated, in the case where only one resin film contains particles in the two layers, the thickness and the thickness of the entire resin film material for improving the particle trapping rate are selected. The thickness of the resin film layer containing particles. The resin film containing conductive particles in the present invention is characterized in that the resin film layer containing the conductive particles or the resin film layer containing the conductive particles is laminated in two or more layers in the thickness direction, and the inside contains the above-mentioned The resin film layer on the center surface in the thickness direction of the equidistant position of the two surfaces of the resin film or at least one resin film layer adjacent to the center surface in the thickness direction is an insulating resin film layer not containing the conductive particles. form. Further, when the resin film layer containing the resin film material particles is placed in contact with either the upper electrode or the lower electrode in the stage before the connection molding, whether or not the particle capturing ratio can be increased can be selected depending on the shape of the electrode. In addition, in the case where the resin film material which is laminated in two layers in the thickness direction is contained in the resin film of only one layer, the viscosity and thermal conductivity of the insulating layer and the conductive layer which constitute the two layers are characterized. There is a difference in physical properties such as the rate of heat generation. The adhesive composition for dispersing the conductive particles in the present invention may, for example, be a thermosetting adhesive composition or a photocurable adhesive composition -8-201013710. Specifically, for example, an adhesive composition containing (1) an epoxy resin and (2) an epoxy resin hardener, a (3) radical polymerizable substance, and (4) heating or light generation may be used. Adhesive composition of a free radical hardener, a mixture composition containing the above (1) and (2) components, and a mixture composition containing the adhesive composition of the above (3) and (4) components Wait. Examples of the epoxy resin of the component (1) include bisphenol A type φ epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolak type epoxy resin, and cresol novolac. Varnish type epoxy resin, bisphenol A novolak type epoxy resin, bisphenol F novolak type epoxy resin, alicyclic epoxy resin, epoxy propyl ester type epoxy resin, epoxy propyl amine type ring Oxygen resin, intramethylene urea resin, isocyanurate epoxy resin, aliphatic chain epoxy resin, and the like. These epoxy resins can also be halogenated and can also be hydrogenated. Further, an acrylonitrile group or a methyl acrylonitrile group may be added to the side chain of the epoxy resin. These may be used alone or in combination of two or more. Φ The curing agent of the component (2) is not particularly limited as long as it can cure the epoxy resin, and examples thereof include an anionic polymerizable catalyst hardener, a cationic polymerizable catalyst hardener, and a polyaddition type. Hardener and the like. Among them, an anion or a cationic polymerizable catalyst hardener is preferred because it is excellent in rapid hardenability and does not require chemical equivalents. Examples of the anionic or cationically polymerizable catalyst-type curing agent include an imidazole-based, an anthraquinone-based, a boron trifluoride-amine complex, a phosphonium salt, an amine imide, and a diamine maleimonitrile. Melamine and its derivatives, salts of polyamines, dicyandiamide, etc., and denatured substances thereof and the like can also be used. -9 - 201013710 The polyaddition-type hardener may, for example, be a polyamine, a polythiol, a polyphenol or an acid anhydride. An anionic polymerization type catalyst hardener, for example, when a tertiary amine and an imidazole are blended, the epoxy resin is hardened by heating at a temperature of about 160 ° C to 200 ° C for 1 〇 sec. to several hours. . Therefore, it is preferable because the usable time (life) becomes longer. Further, a photosensitive key salt (mainly using an aromatic diazonium salt or an aromatic onium salt) which cures an epoxy resin by energy ray irradiation can also be suitably used as a cationic polymerization type catalyst type hardener. In addition, as the cationic polymerization type catalyst-type curing agent which cures the epoxy resin by heat activation, for example, an aliphatic sulfonium salt or the like is used. Such a hardener is preferred because of its characteristics of rapid hardenability. These epoxy resin hardeners are coated with a polymer material such as a polyurethane or a polyester, a metal film such as nickel or copper, or an inorganic substance such as calcium silicate. Sex hardeners are preferred because of their prolonged use. φ When the amount of the curing agent of the epoxy resin is 25 seconds or less, in order to obtain a sufficient reaction rate, 100 parts by mass of the epoxy resin and the film forming material to be blended as needed are used in a total amount of 1 ~50 parts by mass is preferred. These hardeners may be used alone or in combination of two or more. The radically polymerizable substance of the component (3) is not particularly limited as long as it has a functional group which is polymerized by a radical. Specific examples thereof include a compound of acrylate (corresponding to the corresponding methyl-10-201013710 acrylate, the same applies hereinafter), a compound of propylene oxime (including the corresponding methacryloxy group, the same hereinafter), Maleic imine compound, citrate imine resin, naphthol quinone imine resin, and the like. These radical polymerizable substances can be used in the form of monomers or oligomers, and monomers and oligomers can also be used. Examples of the acrylate compound include methyl acrylate, ethyl acrylate, isopropyl acrylate, isobutyl acrylate, ethylene glycol dipropylene φ acid ester, diethylene glycol diacrylate, and trimethylolpropane three. Acrylate, tetramethylol methane tetraacrylate, 2-hydroxy-1,3-dipropenyloxypropane, 2,2-bis[4-(acrylomethoxymethoxy)phenyl]propane, 2, 2-bis[4-(acryloxypolyethoxy)phenyl]propane, dicyclopentenyl acrylate, tricyclodecyl acrylate, tris(propylene oxyethyl) isocyanurate, amine Carbamate acrylate and the like. Further, a polymerization inhibitor such as hydroquinone or methyl ether hydroquinone may be suitably used as needed. Further, from the viewpoint of improving heat resistance, a radically polymerizable material such as an acrylate compound is preferably a substituent having at least one type of φ dicyclopentenyl group, tricyclodecanyl group, triterpene ring or the like. The radically polymerizable substance is preferably a radically polymerizable substance having a phosphate structure represented by the following chemical formula (I). At this time, in order to increase the bonding strength to the surface of the inorganic material such as metal, it is appropriate to indirectly bond the circuit electrodes to each other. -11 - 201013710 1 0 0 ch3 1 i

OCH2CH2、〇-C-C=CH2 (式中,n爲1〜3之整數〕 具有此磷酸酯構造之自由基聚合性物質,例如,使磷 酸酐與(甲基)丙烯酸2-羥乙酯反應則可取得。具體而言 ,可列舉例如,單(2-甲基丙烯醯氧乙基)酸式磷酸酯、 二(2-甲基丙烯醯氧乙基)酸式磷酸酯等。 具有上述化學式(I)所示之磷酸酯構造之自由基聚 合性物質的配合量,相對於自由基聚合性物質與視需要配 合之膜成形材之合計1〇〇質量份,以〇·〇1~5 0質量份爲佳 又,上述自由基聚合性物質亦可倂用丙烯酸烯丙酯。 此時,丙烯酸烯丙酯之配合量,相對於自由基聚合性物質 ,與視需要配合之膜成形材之合計100質量份,以0.1~10 質量份爲佳。 此些自由基聚合性物質可單獨或組合使用2種以上。 上述成分(4)之經由加熱或光發生游離自由基的硬 化劑,例如,若可經由加熱或紫外線等之電磁波照射分解 發生游離自由基的硬化劑,則無特別限制可使用。具體而 言,可列舉例如,過氧化化合物,偶氮系化合物等。此類 -12- 201013710 硬化劑可根據目的之連接溫度、連接時間、使用壽命等而 適當選定。由高反應性和提高使用壽命之觀點而言’以半 衰期1 〇小時之溫度爲40°C以上’且’半衰期1分鐘之溫 度爲18(TC以下的有機過氧化物爲佳,並以半衰期1〇小時 之溫度爲60°C以上,且,半衰期1分鐘之溫度爲170°C以 下的有機過氧化物爲更佳。 經由加熱發生游離自由基的硬化劑’更具體而言,可 0 列舉過氧化二醯基、過氧基二碳酸酯:過氧基酯、過氧基 縮酮、過氧化二烷基、氫過氧化物、過氧化甲矽烷基等。 其中,亦以過氧基酯、過氧化二烷基、氫過氧化物、過氧 化甲矽烷基等爲佳,且以取得高反應性之過氧基酯爲更佳 〇 此些經由加熱或光發生游離自由基的硬化劑,例如, 使用分解促進劑、抑制劑等亦可。又,將此些硬化劑以聚 胺基甲酸酯系、聚酯系之高分子物質等被覆予以微膠囊化 Φ 並且賦予潛在性亦可。微膠囊化之硬化劑因爲可延長可使 用時間故爲佳。 上述經由加熱或光發生游離自由基之硬化劑的配合量 ,於連接時間爲25秒鐘以下之情形,爲了取得充分的反 應率,相對於自由基聚合物物質與視需要配合之膜成形材 之合計1〇〇質量份,以2~10質量份爲佳。 此些經由加熱或光發生游離自由基之硬化劑可單獨或 組合使用2種以上。 於電路連接材料中,視需要,亦可添加膜成形材。所 -13- 201013710 謂膜成形材,例如,將液狀物固形化,並將構成組成物作 成膜形狀之情形中,可賦予此膜的操作容易,不會容易裂 開、割開、發黏的機械特性等,可以通常之狀態(常溫常 壓下)以膜型式操作。此些膜成形材可列舉例如,苯氧基 樹脂、聚乙烯基甲縮醛樹脂、聚苯乙烯樹脂、聚乙烯基丁 縮醛樹脂、聚酯樹脂、聚醯胺樹脂、二甲苯樹脂、聚胺基 甲酸酯樹脂等。其中,亦可苯氧基樹脂由於接黏性、相溶 性、耐熱性、機械強度等優良,故爲佳。 _ 上述膜成形材的配合量,在含有(1)環氧樹脂及(2 )環氧樹脂之硬化劑的接黏劑組成物中配合時,由電路連 接時之樹脂流動性的觀點而言,相對於環氧樹脂與膜成形 材之合計100質量份,以5〜80質量份爲佳。 又,上述膜成形材的配合量,在配合於含有(3)自 由基聚合性物質及(3)經由加熱或光發生游離自由基之 硬化劑的接黏劑組成物時,由電路連接時之樹脂流動性的 觀點而言,相對於自由基聚合性物質與膜成形材之合計 φ 100質量份,以5〜80質量份爲佳。 此些膜成形材可單獨或組合使用2種以上。電路連接 材料,亦可進一步含有丙烯酸、丙烯酸酯、甲基丙烯酸酯 及丙烯腈中之至少一者作爲單體成分的聚合物或共聚物。 由緩和應力的觀點而言,以含有環氧丙基醚基之環氧丙基 丙烯酸酯或環氧丙基甲基丙烯酸酯作爲單體成分之共聚物 系丙烯基橡膠爲佳。此些丙烯基橡膠之重量平均分子量由 提高接黏劑之凝集力的觀點而言,以20萬以上爲佳。 -14- 201013710 異向導電性粒子的配合量,在含有(1)環氧樹脂及 (2)環氧樹脂之硬化劑的接黏劑組成物中配合時,相對 於環氧樹脂與膜成形材之合計100體積份,以0.1〜100體 積份爲佳。 又,異向導電性粒子的配合量,在含有(3)自由基 聚合性物質及(3)經由加熱或光發生游離自由基之硬化 劑的接黏劑組成物中配合時,相對於自由基聚合性物質與 〇 膜成形材之合計100體積份,以1〜100體積份爲佳。 於電路連接材料中,進一步,亦可視需要含有橡膠微 粒子、充塡劑、軟化劑、促進劑、抗氧化劑、著色劑、難 燃化劑、觸變劑、偶合劑、酚樹脂、三聚氰胺樹脂、異氰 酸酯類等。 又,本發明之導電性粒子若具有可取得電性連接之導 電性,則無特別限制。上述導電性粒子可列舉例如,Au、 Ag、Ni、Cu及焊錫等之金屬粒子和碳等。又,導電性粒 Φ 子係將作爲核之粒子被覆1層或2層以上之層,且其最外 層爲具有導電性者亦可。又,上述導電性粒子爲以塑膠等 之絕緣性粒子作爲核,並於此核表面以上述金屬或碳作爲 主成分之層予以被覆亦可。又,亦可將其進行絕緣被覆處 理。彼等可單獨或組合使用2種以上。 又’於取得本發明之樹脂膜層上,將上述接黏劑組成 物中視需要分散導電性粒子的混合液,於支持基材上塗佈 ,或於非織布等之基材中含浸上述混合液並且載置於支持 基材上,除去溶劑等即可取得。 -15- 201013710 將如此所得之絕緣性樹脂膜層和含有導電性粒子之樹 脂膜層分別貼合,則可簡單地多層化。OCH2CH2, 〇-CC=CH2 (wherein n is an integer of 1 to 3) a radically polymerizable substance having the phosphate structure, for example, by reacting phosphoric anhydride with 2-hydroxyethyl (meth)acrylate Specific examples thereof include mono(2-methylpropenyloxyethyl) acid phosphate, bis(2-methylpropoxy oxyethyl) acid phosphate, and the like. The amount of the radically polymerizable substance of the phosphate structure shown in the above is 1 part by mass of the total amount of the radically polymerizable material and the film forming material to be blended as needed, and 1 to 50 parts by mass of 〇·〇 In addition, the above-mentioned radically polymerizable substance may be an allyl acrylate. In this case, the total amount of the acrylic acid acrylate is 100 masses with respect to the radical polymerizable substance and the film forming material to be blended as necessary. The radically polymerizable substance may be used singly or in combination of two or more kinds. The curing agent which generates free radicals by heating or light in the above component (4), for example, may be used. Electromagnetic wave irradiation such as heating or ultraviolet light The curing agent of the free radical can be used without particular limitation. Specific examples thereof include a peroxy compound, an azo compound, etc. Such a -12-201013710 hardener can be connected depending on the purpose, connection time, It is appropriately selected from the viewpoints of service life, etc. From the viewpoint of high reactivity and improvement in service life, the temperature at which the half-life is 1 〇 hour is 40 ° C or higher and the temperature at which the half-life is 1 minute is 18 (the organic peroxide below TC) Preferably, the organic peroxide having a half-life of 1 hour is 60 ° C or higher, and a half-life of 1 minute is 170 ° C or less. The hardener which generates free radicals by heating is more specific. In addition, examples thereof include a dinonyl peroxide group, a peroxydicarbonate: a peroxy ester, a peroxy ketal, a dialkyl peroxide, a hydroperoxide, a methyromethyl peroxide, and the like. Also preferred are peroxy esters, dialkyl peroxides, hydroperoxides, methyrosine peroxides, etc., and it is more preferred to obtain a highly reactive peroxyester. Hard of free radicals For example, a decomposition accelerator, an inhibitor, or the like may be used, and these curing agents may be microencapsulated by coating with a polyurethane or a polyester-based polymer material to impart potential properties. The microencapsulated hardener is preferably used for a prolonged period of use. The amount of the curing agent that generates free radicals by heating or light is 25 seconds or less in order to obtain a sufficient reaction. The ratio is preferably from 2 to 10 parts by mass based on the total amount of the free radical polymer material and the film forming material to be blended as needed. The hardeners which generate free radicals by heating or light may be used alone or Two or more types may be used in combination. In the circuit connecting material, a film forming material may be added as needed. From -13 to 201013710, a film forming material, for example, solidifies a liquid material, and forms a composition into a film shape. In this case, the operation of the film can be easily performed, and the mechanical properties such as cracking, cutting, and sticking are not easily caused, and the film type can be operated in a normal state (at normal temperature and normal pressure). Examples of the film forming material include a phenoxy resin, a polyvinyl acetal resin, a polystyrene resin, a polyvinyl butyral resin, a polyester resin, a polyamide resin, a xylene resin, and a polyamine. Carbamate resin and the like. Among them, the phenoxy resin is preferably excellent in adhesion, compatibility, heat resistance, mechanical strength, and the like. _ When the compounding amount of the film forming material is blended in the adhesive composition containing the curing agent of (1) epoxy resin and (2) epoxy resin, from the viewpoint of resin fluidity at the time of circuit connection, It is preferably 5 to 80 parts by mass based on 100 parts by mass of the total of the epoxy resin and the film forming material. Further, when the amount of the film forming material is blended in an adhesive composition containing (3) a radically polymerizable substance and (3) a curing agent which generates free radicals by heating or light, when it is connected by a circuit From the viewpoint of the fluidity of the resin, it is preferably 5 to 80 parts by mass based on 100 parts by mass of the total of the radical polymerizable material and the film formed material. These film forming materials may be used alone or in combination of two or more. The circuit connecting material may further contain a polymer or copolymer of at least one of acrylic acid, acrylate, methacrylate and acrylonitrile as a monomer component. From the viewpoint of relaxation stress, a copolymer of a propylene-based rubber containing a glycidyl acrylate group or a propylene methacrylate having a glycidyl acrylate group as a monomer component is preferred. The weight average molecular weight of the propylene-based rubber is preferably 200,000 or more from the viewpoint of improving the cohesive force of the adhesive. -14- 201013710 The blending amount of the anisotropic conductive particles is matched with the epoxy resin and the film forming material when blended in the adhesive composition containing the hardener of (1) epoxy resin and (2) epoxy resin The total amount is 100 parts by volume, preferably 0.1 to 100 parts by volume. Further, when the amount of the isotropic conductive particles is blended in the adhesive composition containing (3) a radically polymerizable substance and (3) a curing agent which generates free radicals by heating or light, it is relative to a radical. The total amount of the polymerizable material and the enamel film forming material is preferably from 1 to 100 parts by volume per 100 parts by volume. Further, in the circuit connecting material, rubber microparticles, sputum, softener, accelerator, antioxidant, colorant, flame retardant, thixotropic agent, coupling agent, phenol resin, melamine resin, isocyanate may be contained as needed. Classes, etc. Further, the conductive particles of the present invention are not particularly limited as long as they have electrical conductivity capable of obtaining electrical connection. Examples of the conductive particles include metal particles such as Au, Ag, Ni, Cu, and solder, and carbon. Further, the conductive particles Φ sub-system may be coated with one or two or more layers as particles of the core, and the outermost layer may be electrically conductive. Further, the conductive particles may be coated with insulating particles such as plastic as a core, and may be coated on the surface of the core with the metal or carbon as a main component. Alternatively, it may be subjected to an insulation coating treatment. These may be used alone or in combination of two or more. Further, in the resin film layer of the present invention, a mixture of the conductive particles dispersed as needed in the adhesive composition is applied onto a support substrate, or the substrate is impregnated with a non-woven fabric or the like. The liquid is placed on a support substrate, and the solvent or the like is removed. -15-201013710 When the insulating resin film layer thus obtained and the resin film layer containing the conductive particles are bonded together, the multilayering can be easily carried out.

根據所欲物性適當調整材料和配合量,則可如上述製 造樹脂薄片,但亦可由市場購得。可購得之樹脂膜片可列 舉例如,日立化成工業(股)製製品名ANISOLM AC-200 系、AC-2000 系、AC-4000 系、AC-7000 系、AC-8000 系 、AC-9000 系、Sony Chemical & Information Device (股 )製製品名 CP901AH-35AC、CP1220IS、CP1720ISV、 CP5720GT 、 CP5720ISV 、 CP5920IKS 、 CP6920F 、 CP6920F3 、 CP6930IFN 、 CP6930JV3 、 CP8016K-35AC 、 CP9042KSV 、 CP9731SB 、 CP9742KS 、 CP9842KS 、 CP9920ISV、CP2053 1 -3 5AG、CP3 094 1-20 AB、DP3232S9 、DP3342MS 、 FP1708E 、 EP1726Y 、 FP1830VS 、 FP2322D 、FP2622A、FP5530DF、(股)EXAX 製製品名 EX-G192 、EX-G193 ' EX-P6906 ' EX-P6907 等。此些樹脂膜片爲 含有導電粒子之單層樹脂膜片時,經由將其除去則可簡便 @ 取得絕緣性的樹脂膜片。經由分別貼合如此所得之絕緣性 樹脂膜片與含有導電性粒子的樹脂膜片,則可予以多層化 (發明之效果) 若根據本發明,在以電極間壓縮予以連接成形,使內 含粒子之樹脂膜材料流動,且成形後粒子被夾於電極間的 步驟中,藉由選擇可提高粒子捕捉率之適切樹脂膜材料全 -16- 201013710 體的厚度、內含粒子之樹脂膜層的厚度、或、將內含粒子 之樹脂膜層接觸上方電極或下方電極任一者之各電極形狀 的膜設置方法的適切化、適切樹脂膜之導電層與絕緣層的 黏度差、熱傳導率差、發熱速度差’則可實現費用減低、 導電性能提高。 【實施方式】 以下,一邊參照所附圖面,一邊說明本發明之實施形 態。首先,使用圖1說明解析對象之成形步驟。 圖1 ( a )爲示出於XZ剖面之X方向的正和負側以對 稱形狀設置電極之構造中,將要電性連接的一對電極。又 ,圖1(b)爲示出於圖1(a)垂直之YZ剖面之Y方向 上延伸且電性連接的一對電極。 連接成形之初期狀態中,內含具有導電性粒子1之樹 脂材料2,被設置於半導體集成電路(1C) 3之上方電極4 φ 與基板5之下方電極6間。此處,將上方電極4之高度以 HU表τρ: ’下方電極6之電極商度以Hs表示,欲電連接之 1對電極筒度和以HI (=HU + Hs)表示,電極4、6之寬度 以W1表示,X方向之正與負側設置之電極4間隔(間距 )以W2表示’ Y方向之電極長度以L1表示。 連接成形步驟爲令加熱的半導體集成電路(IC) 3於 基板5之方向上移動’將含有粒子1的樹脂材料2壓縮’ 使內含粒子1的樹脂材料2流動。此時,藉由半導體集成 電路UC) 3之電極4與樹脂材料2的接觸,使樹脂材料 -17- 201013710 2的溫度變化,並且伴隨溫度變化而產生黏度變化,樹脂 材料2與粒子〗共同壓縮而流動。 樹脂材料2係於含有環氧樹脂、環氧樹脂之潛在性硬 化劑及苯氧基樹脂之接黏劑組成物中,視需要,使用於將 導電性粒子分散。 另外’半導體集成電路(1C) 3之電極4與基板5之 電極6的間隔比粒子1之直徑更小時,夾於電極4間的粒 子被變形壓縮。半導體集成電路(1C) 3之移動終了時, 藉由被夾在電極4、6間之粒子1的導電性,則可傳遞半 導體集成電路(1C) 3與基板5間的電信號。 此處,根據成形後之上方電極4與下方電極6所夾住 之粒子1數及粒子1與電極4、6的接觸面積,決定半導 體集成電路(1C) 3與基板5間的導電性。另外,導電性 爲根據對電極4、6間外加一定電壓時所流過的電流加以 評估。因此,爲了提高導電性能,必須提高成形後之上方 電極4與下方電極6所夾住的粒子數。 於下列之檢討中,示出關於可將成形前電極4、6間 存在之樹脂膜中粒子1之數目、與成形後電極4、6間夾 住之粒子1數目之比率所定義之粒子捕捉率提高的樹脂膜 材料構造。 關於厚度方向以2層層合所構成的樹脂膜材料,對於 2層中僅1層之樹脂膜層中設置粒子1的樹脂膜材料,使 用流動解析進行檢討。於圖2中示出電極4、6及樹脂膜 材的尺寸。如此’使用5種不同的電極形狀4,將X方向 -18- 201013710 之正、負方向均對稱,設定解析模型。 此處,於2層之樹脂膜內,將連接配置於上方電極4 的樹脂膜層定義爲第1層,與下方電極6連接配置之樹脂 膜層定義爲第2層,並且於第1層或第2層中配置內含粒 子1的粒子設置層(導電層)。另外,圖2爲示出設置層 (導電層)爲第2層,僅於第1層設置不內含粒子之層( 絕緣層)之情形,下方電極6之高度Η3 = 0.5μπι。 φ 此處,粒子1之直徑以4μπι、粒子設置層之厚度以4 、6、8μιη之三水準,且樹脂膜全體之厚度一定爲16μιη。 另外,爲了比較,亦進行粒子設置層之厚度爲16μπι (於 樹脂膜之全體厚度設置粒子)之情形的檢討。又,內含之 粒子數,於粒子設置層之厚度爲4μηι之情形中爲200個, 於6μπι之情形中爲300個,於8μιη之情形中爲400個, 於16 μπι之情形中爲800個。 又,上方電極4的溫度爲在10秒鐘由2 5 °C上升至 φ 200°C,且上方電極4爲在下方電極6的方向上移動。初 期上方電極4的移動速度爲lxl0_3m/s。另外,於流動解 析上使用常用之流體解析軟體。 解析中,考慮初期上方電極4的移動速度、與樹脂2 的黏度變化,計算上方電極4的移動速度,且粒子1於樹 脂2內以假設性的標記粒子型式設置。另外,第1層與第 2層樹脂2的物性値爲相同,且解析所用之發熱反應式示 於式(1)〜(5),黏度式示於(6)~(8)。又,樹脂2 爲使用熱硬化性樹脂之環氧樹脂,物性値(黏度式之係數 -19- 201013710 、發熱反應式之係數)示於表1之樹脂(〇 。另外’熱 傳導率爲0.2W/ ( m · Κ)、比熱爲1700J/(kg.K)、密 度爲 1 1 00kg/m3。 ◎發熱反應式 da/dt= ( Kl+K2aM) ( 1-a) N …(1 )The resin sheet can be produced as described above by appropriately adjusting the material and blending amount according to the desired properties, but it is also commercially available. For example, Hitachi Chemical Co., Ltd. product name ANISOLM AC-200, AC-2000, AC-4000, AC-7000, AC-8000, AC-9000 , Sony Chemical & Information Device product name CP901AH-35AC, CP1220IS, CP1720ISV, CP5720GT, CP5720ISV, CP5920IKS, CP6920F, CP6920F3, CP6930IFN, CP6930JV3, CP8016K-35AC, CP9042KSV, CP9731SB, CP9742KS, CP9842KS, CP9920ISV, CP2053 1 -3 5AG, CP3 094 1-20 AB, DP3232S9, DP3342MS, FP1708E, EP1726Y, FP1830VS, FP2322D, FP2622A, FP5530DF, (EX) EXAX product name EX-G192, EX-G193 'EX-P6906 ' EX-P6907 Wait. When the resin film sheet is a single-layer resin film containing conductive particles, it is easy to obtain an insulating resin film sheet by removing it. By laminating the insulating resin film sheet thus obtained and the resin film sheet containing the conductive particles, it is possible to multilayer (the effect of the invention). According to the present invention, the particles are connected and formed by compression between electrodes to contain the particles. The resin film material flows, and the particles are sandwiched between the electrodes after the forming, and the thickness of the appropriate resin film material, the thickness of the resin film layer containing the particles, is selected by increasing the particle capture rate. Or, the method of arranging the film in which the resin film layer containing the particles is in contact with each of the upper electrode or the lower electrode is appropriate, the viscosity of the conductive layer and the insulating layer of the resin film are poor, the thermal conductivity is poor, and the heat is poor. The speed difference' can achieve cost reduction and improved conductivity. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, the forming step of the analysis target will be described using FIG. Fig. 1 (a) is a pair of electrodes to be electrically connected in a structure in which electrodes are arranged in a symmetrical shape on the positive and negative sides in the X direction of the XZ section. Further, Fig. 1(b) is a pair of electrodes which are extended and electrically connected in the Y direction of the vertical YZ section of Fig. 1(a). In the initial state of the connection molding, the resin material 2 containing the conductive particles 1 is provided between the upper electrode 4 φ of the semiconductor integrated circuit (1C) 3 and the lower electrode 6 of the substrate 5. Here, the height of the upper electrode 4 is represented by the HU table τρ: 'the electrode quotient of the lower electrode 6 is represented by Hs, and the pair of electrode barrels to be electrically connected is represented by HI (=HU + Hs), and the electrodes 4, 6 The width is represented by W1, and the distance between the positive and negative electrodes 4 in the X direction (pitch) is represented by W2. The length of the electrode in the Y direction is represented by L1. The connection forming step is such that the heated semiconductor integrated circuit (IC) 3 is moved in the direction of the substrate 5 to compress the resin material 2 containing the particles 1 to flow the resin material 2 containing the particles 1. At this time, the temperature of the resin material -17-201013710 2 is changed by the contact of the electrode 4 of the semiconductor integrated circuit UC) 3 with the resin material 2, and the viscosity changes due to the temperature change, and the resin material 2 is compressed together with the particles. And flowing. The resin material 2 is used in an adhesive composition containing a latent hardener of an epoxy resin or an epoxy resin and a phenoxy resin, and is used to disperse conductive particles as needed. Further, the distance between the electrode 4 of the semiconductor integrated circuit (1C) 3 and the electrode 6 of the substrate 5 is smaller than the diameter of the particle 1, and the particles sandwiched between the electrodes 4 are deformed and compressed. When the movement of the semiconductor integrated circuit (1C) 3 is completed, the electrical signal between the semiconductor integrated circuit (1C) 3 and the substrate 5 can be transmitted by the conductivity of the particles 1 sandwiched between the electrodes 4 and 6. Here, the conductivity between the semiconductor integrated circuit (1C) 3 and the substrate 5 is determined based on the number of particles 1 sandwiched between the upper electrode 4 and the lower electrode 6 after molding and the contact area between the particles 1 and the electrodes 4 and 6. Further, the conductivity is evaluated based on the current flowing when a certain voltage is applied between the electrodes 4 and 6. Therefore, in order to improve the electrical conductivity, it is necessary to increase the number of particles sandwiched between the upper electrode 4 and the lower electrode 6 after molding. In the following review, the particle capture ratio defined by the ratio of the number of particles 1 in the resin film existing between the pre-formed electrodes 4 and 6 to the number of particles 1 sandwiched between the formed electrodes 4 and 6 is shown. Improved resin film material construction. In the resin film material which is formed by laminating two layers in the thickness direction, the resin film material in which the particles 1 are provided in the resin film layer of only one of the two layers is examined by flow analysis. The dimensions of the electrodes 4, 6 and the resin film are shown in Fig. 2. Thus, using five different electrode shapes 4, the positive and negative directions of the X direction -18-201013710 are symmetric, and an analytical model is set. Here, in the resin film of two layers, the resin film layer which is connected to the upper electrode 4 is defined as the first layer, and the resin film layer which is connected to the lower electrode 6 is defined as the second layer, and is in the first layer or In the second layer, a particle-setting layer (conductive layer) containing the particles 1 is disposed. Further, Fig. 2 shows a case where the installation layer (conductive layer) is the second layer, and only the layer (insulating layer) containing no particles is provided in the first layer, and the height of the lower electrode 6 is Η3 = 0.5 μm. φ Here, the diameter of the particle 1 is 4 μm, and the thickness of the particle-providing layer is three levels of 4, 6, and 8 μm, and the thickness of the entire resin film is always 16 μm. Further, for comparison, a review was also made on the case where the thickness of the particle-setting layer was 16 μm (particles were provided in the entire thickness of the resin film). Further, the number of particles contained therein is 200 in the case where the thickness of the particle-setting layer is 4 μm, 300 in the case of 6 μm, 400 in the case of 8 μm, and 800 in the case of 16 μπι. . Further, the temperature of the upper electrode 4 rises from 25 ° C to φ 200 ° C in 10 seconds, and the upper electrode 4 moves in the direction of the lower electrode 6. The moving speed of the initial upper electrode 4 is lxl0_3 m/s. In addition, a commonly used fluid analysis software is used for flow analysis. In the analysis, the moving speed of the initial upper electrode 4 and the viscosity change of the resin 2 are considered, and the moving speed of the upper electrode 4 is calculated, and the particles 1 are placed in the resin 2 in a hypothetical labeled particle pattern. Further, the physical properties of the first layer and the second layer of the resin 2 are the same, and the heat generation reaction formula for analysis is shown in the formulas (1) to (5), and the viscosity type is shown in (6) to (8). Further, the resin 2 is an epoxy resin using a thermosetting resin, and the physical properties of the resin (the coefficient of the viscosity type -19 - 201013710, the coefficient of the heat generation reaction formula) are shown in the resin of Table 1. (The heat conductivity is 0.2 W/ (m · Κ), specific heat is 1700J/(kg.K), density is 1 00kg/m3. ◎Fever reaction formula da/dt= ( Kl+K2aM) ( 1-a) N ...(1 )

Kl=Ka exp ( -Ea/T ) …(2) K2 = Kb exp ( -Eb/T ) ..· ( 3 ) a = Q/Q0 ··· ( 4 ) dQ/dt = Q0 ( K1 +K2aM ) ( 1 -a ) N ... ( 5) 此處,a :反應率,t :時間,T :溫度,dA/dt :反應 速度,ΚΙ、K2:成爲溫度函數的係數,Q:直到任意時刻 的發熱量,Q0 :直到反應終了時的總發熱量,N、Μ、Ka 、Ea、Kb、Eb :材料固有的係數,dQ/dt :發熱速度。 ◎黏度式 η - η 0 ( (1+a/agel) /(1 -a/agel ) ) Η …(6) 7? 0 = a · exp ( b/T ) ··· ( 7 ) H = f/T-g ... ( 8 ) 此處,n :黏度’ a :反應率,τ :樹脂溫度,agel : 膠化反應率’ a、b、f、g:材料固有的常數。 使用本解析手法’算出粒子1的捕捉率。另外,粒子 1的捕捉率ε (%)爲連接成形前電極4、6間存在之樹脂 膜材料中之粒子數Ν1、與成形後電極4、6間夾住之粒子 數Ν2之比率以式(9)算出。 …(9 ) ε =Ν2/Ν1χ100 201013710 粒子1之捕捉率的解析結果示於圖3、4、5、6。 圖3爲對於各電極形狀,比較樹脂膜之全體厚度設置 粒子1時之粒子1的捕捉率,圖4爲對於各電極形狀,比 較粒子設置層之厚度爲4μιη時之粒子1的捕捉率,圖5爲 對於各電極形狀,比較粒子設置層之厚度爲6μϊη時之粒子 1的捕捉率,圖6爲對於各電極形狀,比較粒子設置層之 厚度爲8μιη時之粒子1的捕捉率。如此,依據各電極形狀 φ ,使得粒子捕捉率爲不同,但粒子設置層的厚度愈小則粒 子1的捕捉率愈高。 樹脂膜片之樹脂材料,可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中,視 需要,分散導電性粒子者。 圖7爲對於形狀(1),於第2層設置之粒子設置層 厚度爲8μιη之情形中,上方電極4與下方電極6間之距離 爲14μιη之X方向的樹脂流動速度分佈,以線表示比率( Ο ΧΖ平面)。此速度分佈之比率爲以X方向之速度最大値 爲1之情形的比率予以描線。 樹脂膜片之樹脂材料,可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中,視 需要,分散導電性粒子者。 如此,X方向之速度分佈比率爲最大値者,係在於上 力電極4與下方電極6間之厚度尺寸的中心部分附近。因 此’ X方向的樹脂流動速度爲最大,在粒子1易由電極4 ' 6間自X正方向排出之厚度方向的中心部分,未設置內 -21 - 201013710 含粒子1的導電層,並且以設置未內含粒子1之絕緣層的 構造,則可提高粒子1的捕捉率。 即,如圖12所示般,對於2層構造之樹脂膜片’將 未內含粒子1的絕緣層,在樹脂膜的任意複數處所’於厚 度尺寸中心點所構成面7的部分、或厚度尺寸中心點所構 成面7之鄰接層所設置的構造,係有效於提高粒子1的捕 捉率。 樹脂膜片之樹脂材料,可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中,視 需要,分離導電性粒子者。 又,如圖13所示般,於使用3層構造之樹脂膜片之 情形中,在樹脂膜的任意複數處所,於厚度尺寸中心點所 構成面7之部分,設置未內含粒子1之絕緣層的構造,則 可提高粒子捕捉率。 樹脂膜片之樹脂材料,可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中,視 需要,分散導電性粒子者。 又,如圖14所示般,於使用4層構造之樹脂膜片之 情形中,在樹脂膜的任意複數處所,於厚度尺寸中心點所 構成面7之部分,設置未內含粒子1之絕緣層的構造,則 可提高粒子捕捉率。又,進一步,使用具備多層樹脂膜層 構造之樹脂膜片之情形亦同樣。 樹脂膜片之樹脂材料,可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中,視 -22- 201013710 需要,分散導電性粒子者。 另外,關於厚度方向以2層以上層合所構成之內含粒 子的樹脂膜片,於製造時在層間厚度比有發生偏差之情形 。因此,關於厚度方向以2層以上層合所構成之內含粒子 的樹脂膜片,在樹脂膜片的任意複數處所,於厚度尺寸中 心點所構成面7至樹脂膜厚度之±5%以內範圍中,設置未 配置粒子之絕緣層構造亦可,故在樹脂膜片的任意複數處 0 所,將厚度尺寸中心點所構成面7鄰接的樹脂膜層,作成 未內含粒子1的絕緣層亦可。 此處,如圖3~6所示般,藉由減薄設置粒子1之膜層 厚度,則可在速度最大之上方電極4與下方電極6間之厚 度方向之中心部分遠離處所設置粒子,故粒子的捕捉率變 高。 本解析中,將內含粒子1的樹脂膜層厚度設定爲4、6 、8μηι進行檢討,但爲了提高粒子1的捕捉率,如圖3〜6 φ 所示般,必須縮小粒子設置層的厚度,期望縮小厚度直到 與粒子1的直徑相等。但,於製造具有與粒子1直徑相等 厚度之樹脂膜的情形中,由於粒子1由樹脂膜材料中露出 ,故若以製造裝置之裝置設定誤差,使設置粒子1之膜厚 度比粒子1之直徑更小,則發生粒子1變形的問題等之製 造上的問題。 因此,2層中僅1層樹脂膜層設置粒子1之2層樹脂 膜片中,粒子設置層的厚度期望爲粒子1之直徑+10%以下 。以上,雖然示出關於2層層合所構成之樹脂膜材料的檢 -23- 201013710 討結果,但本發明並非限定於此,關於3層、4層或更多 層的樹脂膜片亦可應用。 樹脂膜片之樹脂材料,可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中,視 需要,分散導電性粒子者。 其一例,以3層層合所構成之樹脂膜材料,進行3層 中,於上方電極4與下方電極6連接層之樹脂膜中設置粒 子1時的解析檢討。解析所用之形狀爲與圖2所示之電極 形狀(1)相同,且粒子設置層的厚度上下均爲4μηι進行 檢討。設置之粒子1數爲400個。又,樹脂膜層的物性値 於3層同爲表1之値。 解析結果爲將上下電極4、6之距離爲14μιη之X方 向之速度分佈(ΧΖ平面)的比率以線表示,同時將粒子 捕捉率的計算結果示於圖9。如此,ΧΖ平面中之X方向 的速度於上下電極間厚度方向之大約中心部分(未設置粒 子1的部分)爲最大,3層樹脂膜中,於上方電極4與下 方電極6連接層之樹脂膜中設置粒子1時之粒子捕捉率, 亦可高於圖3所示形狀(1)之膜厚度全體設置粒子〖之 情形。 又,粒子設置層之厚度爲薄之情形中,因爲可於X方 向速度最大之電極間厚度方向之由中心部分遠離處設置粒 子1,故可提高粒子捕捉率。因此,使用3層樹脂膜材料 之情形中’亦期望膜厚度方向之最上方與最下方之粒子設 置層厚度與2層膜之情形相同,爲粒徑+1〇%以下。 -24- 201013710 以上,示出關於內含粒子之導電層設置位置之樹脂膜 片構造,但亦可適用於使用本樹脂膜片予以電連接的電子 零件。以上,示出厚度方向之2層或3層層合構造之情形 ,但本發明不被限定於此,可使用於層合2層以上之多層 層合構造的樹脂膜片。 樹脂膜片之樹脂材料,可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中,視 φ 需要,分散導電性粒子者。 如圖4、5、6所示般,於圖2之第1層或第2層任一 者設置粒子1時可提高粒子捕捉率,但根據電極形狀而異 。此處,將各電極形狀以(第1層設置粒子1時之粒子捕 • 捉率)/(第2層設置粒子1時之粒子捕捉率)爲縱軸進 行處理之結果示於圖9。 另外,(第1層設置粒子1時之粒子捕捉率)/(第2 層設置粒子1時之粒子捕捉率)爲大於1之情形中,第1 Φ 層設置粒子1時爲提高粒子捕捉率的形狀,(第1層設置 粒子1時之粒子捕捉率)/(第2層設置粒子1時之粒子 捕捉率)爲小於1之情形中,第2層設置粒子1時爲提高 粒子捕捉率的形狀。 此處,如圖1所示般,將欲接續之1對電極高度和視 爲HI ( =HU + Hs),電極4、6寬之平均値視爲Wl,X方 向之正和負側設置之電極4的間隔(間距)視爲W2,粒 徑視爲H2之情形中, 以((W2-W1 ) X ( H1+H2 ) 3 ) / ( W1 xH23 )作爲橫 -25- 201013710 軸,且以(第1層設置粒子時之捕捉率)/(第2層設置 粒子時之捕捉率)作爲縱軸並且整理之結果示於圖1G° 如此,使用2層樹脂膜片之情形中’根據電極形狀所 決定,例如,由((W2_W1 ) X ( H1+H2 ) 3 ) / ( WlxH23 )之値,若於第1層或第2層任一層設置粒子’則可令提 高粒子捕捉率明確化°Kl=Ka exp ( -Ea/T ) (2) K2 = Kb exp ( -Eb/T ) ..· ( 3 ) a = Q/Q0 ··· ( 4 ) dQ/dt = Q0 ( K1 +K2aM ( 1 - a ) N ... ( 5) where a: reaction rate, t: time, T: temperature, dA/dt: reaction rate, ΚΙ, K2: coefficient which becomes a function of temperature, Q: until arbitrarily The calorific value at the moment, Q0: the total calorific value until the end of the reaction, N, Μ, Ka, Ea, Kb, Eb: the inherent coefficient of the material, dQ/dt: the heating rate. ◎ viscosity η - η 0 ( (1+a/agel) /(1 -a/agel ) ) Η ...(6) 7? 0 = a · exp ( b/T ) ··· ( 7 ) H = f /Tg (8) Here, n: viscosity 'a: reaction rate, τ: resin temperature, agel: gelation reaction rate 'a, b, f, g: a material inherent constant. The capture rate of the particles 1 was calculated using this analysis method. Further, the capturing ratio ε (%) of the particles 1 is a ratio of the number of particles Ν1 in the resin film material existing between the electrodes 4 and 6 before the forming, and the number of particles Ν2 sandwiched between the electrodes 4 and 6 after the forming ( 9) Calculate. (9) ε = Ν 2 / Ν 1 χ 100 201013710 The analysis results of the capture rate of the particle 1 are shown in Figs. 3, 4, 5, and 6. 3 is a graph showing the capture ratio of the particles 1 when the particles 1 are provided over the entire thickness of the resin film for each electrode shape, and FIG. 4 is a graph showing the capture ratio of the particles 1 when the thickness of the particle-providing layer is 4 μm for each electrode shape. 5 is a capture ratio of the particles 1 when the thickness of the particle-providing layer is 6 μϊη for each electrode shape, and FIG. 6 is a capture ratio of the particles 1 when the thickness of the particle-providing layer is 8 μm for each electrode shape. Thus, the particle trapping rate is different depending on the shape of each electrode φ, but the smaller the thickness of the particle-setting layer, the higher the trapping rate of the particle 1. The resin material of the resin film can be used for the adhesive composition containing an epoxy resin, a latent curing agent for an epoxy resin, and a phenoxy resin, and if necessary, the conductive particles are dispersed. 7 is a resin flow velocity distribution in the X direction in which the distance between the upper electrode 4 and the lower electrode 6 is 14 μm in the case where the particle layer thickness of the second layer is set to 8 μm for the shape (1), and the ratio is represented by a line. ( Ο ΧΖ plane). The ratio of the velocity distribution is plotted as the ratio of the maximum velocity 値 in the X direction to 1. The resin material of the resin film can be used for the adhesive composition containing an epoxy resin, a latent curing agent for an epoxy resin, and a phenoxy resin, and if necessary, the conductive particles are dispersed. Thus, the speed distribution ratio in the X direction is the largest, which is in the vicinity of the center portion of the thickness dimension between the upper electrode 4 and the lower electrode 6. Therefore, the flow velocity of the resin in the 'X direction is the largest, and the conductive layer containing the particles 1 is not disposed in the center portion of the thickness direction in which the particles 1 are easily discharged from the positive direction of the X between the electrodes 4'6, and is set. The structure in which the insulating layer of the particles 1 is not contained can increase the capturing ratio of the particles 1. That is, as shown in FIG. 12, the resin film sheet of the two-layer structure has a portion or thickness of the insulating layer which does not contain the particles 1 at any plural position of the resin film at the center point of the thickness dimension. The structure provided by the adjacent layer of the surface 7 formed by the center point of the dimension is effective for increasing the capture rate of the particle 1. The resin material of the resin film can be used as an adhesive composition for a latent curing agent containing an epoxy resin or an epoxy resin and a phenoxy resin, and if necessary, the conductive particles are separated. Further, as shown in FIG. 13, in the case of using a resin film having a three-layer structure, in any of a plurality of places of the resin film, an insulating layer containing no particles 1 is provided in a portion of the surface 7 formed by the center point of the thickness dimension. The structure of the layer increases the particle capture rate. The resin material of the resin film can be used for the adhesive composition containing an epoxy resin, a latent curing agent for an epoxy resin, and a phenoxy resin, and if necessary, the conductive particles are dispersed. Further, as shown in FIG. 14, in the case of using a resin film having a four-layer structure, in any of a plurality of places of the resin film, an insulating layer containing no particles 1 is provided in a portion of the surface 7 formed by the center point of the thickness dimension. The structure of the layer increases the particle capture rate. Further, the same applies to the case of using a resin film having a multilayer resin film layer structure. The resin material of the resin film can be used as an adhesive composition for a latent curing agent containing an epoxy resin or an epoxy resin and a phenoxy resin, and it is necessary to disperse conductive particles as required by -22-201013710. Further, the resin film containing the particles which are formed by laminating two or more layers in the thickness direction may have a variation in the interlayer thickness ratio at the time of production. Therefore, the resin film sheet containing the particles contained in two or more layers in the thickness direction is within a range of ±5% of the thickness of the surface 7 of the thickness of the resin film at any of the plurality of positions of the resin film. In addition, the insulating layer structure in which the particles are not disposed may be provided. Therefore, the resin film layer adjacent to the surface 7 formed by the center point of the thickness dimension is formed as an insulating layer not containing the particles 1 at any of the plurality of resin film sheets. can. Here, as shown in FIGS. 3 to 6, by thinning the thickness of the film layer of the particles 1, it is possible to provide particles at a center portion in the thickness direction between the upper electrode 4 and the lower electrode 6 at the highest speed, so that the particles are disposed away from each other. The capture rate of particles becomes high. In this analysis, the thickness of the resin film layer containing the particles 1 is set to 4, 6, and 8 μm. However, in order to increase the capture ratio of the particles 1, it is necessary to reduce the thickness of the particle-setting layer as shown in FIGS. 3 to 6 φ. It is desirable to reduce the thickness until it is equal to the diameter of the particle 1. However, in the case of producing a resin film having a thickness equal to the diameter of the particles 1, since the particles 1 are exposed from the resin film material, the film thickness of the set particles 1 is made larger than the diameter of the particles 1 by the setting error of the apparatus for manufacturing the apparatus. Smaller, there is a problem in manufacturing such as the problem of deformation of the particles 1. Therefore, in the two-layer resin film in which only one resin film layer of the two layers is provided with the particles 1, the thickness of the particle-setting layer is desirably +10% or less of the diameter of the particle 1. As described above, the results of the inspection of the resin film material composed of the two-layer laminate are shown in -23-201013710, but the present invention is not limited thereto, and the resin film of 3, 4 or more layers may be applied. . The resin material of the resin film can be used for the adhesive composition containing an epoxy resin, a latent curing agent for an epoxy resin, and a phenoxy resin, and if necessary, the conductive particles are dispersed. In one example, the resin film material composed of three layers is laminated and analyzed in the case where the particles 1 are provided in the resin film of the connection layer between the upper electrode 4 and the lower electrode 6 in three layers. The shape used for the analysis was the same as that of the electrode shape (1) shown in Fig. 2, and the thickness of the particle-setting layer was 4 μm above and below. The number of particles set is 400. Further, the physical properties of the resin film layer were the same as those in Table 1 in the three layers. As a result of the analysis, the ratio of the velocity distribution (ΧΖ plane) in the X direction in which the distance between the upper and lower electrodes 4 and 6 is 14 μm is indicated by a line, and the calculation result of the particle capturing ratio is shown in Fig. 9 . Thus, the velocity in the X direction in the pupil plane is approximately the center portion (the portion where the particle 1 is not provided) in the thickness direction between the upper and lower electrodes, and the resin film in the layer connecting the upper electrode 4 and the lower electrode 6 in the three resin films. The particle capture ratio when the particle 1 is set may be higher than the case where the particle thickness of the shape (1) shown in Fig. 3 is set as a whole. Further, in the case where the thickness of the particle-setting layer is thin, since the particle 1 can be provided away from the center portion in the thickness direction between the electrodes having the largest X-direction velocity, the particle capturing ratio can be improved. Therefore, in the case of using a three-layer resin film material, it is also desirable that the thickness of the uppermost and lowermost particles of the film thickness direction is the same as that of the two-layer film, and the particle diameter is +1% or less. -24- 201013710 The resin film structure of the position where the conductive layer containing the particles is provided is shown, but it can also be applied to an electronic component which is electrically connected by using the resin film. In the above, a two-layer or three-layer laminated structure in the thickness direction is shown. However, the present invention is not limited thereto, and a resin film for laminating two or more layers of a laminated structure can be used. The resin material of the resin film can be used in an adhesive composition containing a latent curing agent for an epoxy resin or an epoxy resin and a phenoxy resin, and the conductive particles are dispersed as needed. As shown in Figs. 4, 5, and 6, when the particles 1 are provided in either the first layer or the second layer of Fig. 2, the particle capturing ratio can be increased, but it varies depending on the shape of the electrode. Here, the results of the treatment of each electrode shape (the particle trapping rate when the particles 1 are placed in the first layer) / (the particle capturing ratio when the particles are set in the second layer) are plotted on the vertical axis are shown in Fig. 9 . In addition, in the case where (the particle capture ratio when the particle 1 is set in the first layer) / (the particle capture rate when the particle 2 is set in the second layer) is greater than 1, the particle capture rate is increased when the particle 1 is set in the first Φ layer. In the case where the shape (the particle capturing ratio when the particle 1 is set in the first layer) / (the particle capturing ratio when the particle 2 is set in the second layer) is less than 1, the shape of the second layer is set to increase the particle capturing rate. . Here, as shown in FIG. 1, the height of the pair of electrodes to be connected is regarded as HI (=HU + Hs), and the average 値 of the widths of the electrodes 4 and 6 is regarded as W1, and the electrodes of the positive and negative sides of the X direction are disposed. The interval (pitch) of 4 is regarded as W2, and in the case where the particle diameter is regarded as H2, ((W2-W1) X ( H1+H2 ) 3 ) / ( W1 xH23 ) is taken as the horizontal -25-201013710 axis, and The capture rate at the time of setting the particles in the first layer) / (the capture rate when the particles are set in the second layer) is shown as the vertical axis and the result of the finishing is shown in Fig. 1G°. In the case of using a two-layer resin film, 'according to the shape of the electrode Decide, for example, that after ((W2_W1) X ( H1+H2 ) 3 ) / ( WlxH23 ), if particles are placed on either layer 1 or layer 2, the particle capture rate can be improved.

即,例如,於((W2-W1 ) X ( H1+H2 ) 3 ) / ( X H23)之値爲未滿50之情形中,於電極高度高之電極4反 · 側之電極6側的膜層設置粒子1 ’且((W2-W1 ) X ( H1+H2 )3)/( WlxH23 )之値爲9 0以上之情形中’藉由 在電極高度高之電極4側的膜層設置粒子1’以可提高粒 子1的捕捉率般,使用適合電子構件之電極形狀或電極構 造的樹脂膜片。 樹脂膜片之樹脂材料,視需要可使用於含有環氧樹脂 、環氧樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物 中,分散導電性粒子者。 @ 電極形狀,例如,於((W2-W1) χ(Η1+Η2) 3) / ( W 1 xH2 3 )之値爲90以上之情形中,在使用2層樹脂膜片 之連接成形的前階段,於電極高度高之電極4側的膜層, 設置粒子1且連接成形的電子零件,可提高粒子捕捉率。 以各電極形狀之(電極間距)/(電極高度)爲橫軸 ,以(第1層設置之捕捉率)/(第2層設置之捕捉率) 爲縱橫且整理之結果示於圖24。 如此,(電極間距)/(電極高度)爲0.7以上時,在 -26- 201013710 使用2層樹脂膜片之連接成形的前階段,於電極高度高之 電極4側的膜層,設置粒子1且連接成形的電子零件,可 提高粒子捕捉率。 此處,於使用圖2之電極形狀(1)之情形中,將2 層樹脂膜全體之厚度變更成10、12、14、16μιη進行檢討 。另外,設置粒子1之層厚度變更成4、6、8μιη,並且對 於全部層,樹脂材料之物性値爲以發熱反應式及黏度式爲 φ 根據式(1)〜(8),且各參數爲使用表1之値。 粒子捕捉率之結果示於圖11。與圖3〜6所示之結果同 樣地,粒子1之設置層厚度小之情形中,可提高粒子捕捉 率。更且,樹脂膜全體之厚度若小,則可提高粒子1的捕 捉率。另外,樹脂膜全體之厚度若大,粒子捕捉率變低者 ,則樹脂及粒子朝向圖1所示之Υ方向的排出量變多。 於前述段落〔0180〕中,記載粒子設置層的厚度期望 爲粒子1之直徑+10%以下,但是使粒子與膜厚大約相等上 • ,必須抑制膜厚的偏差,並且使粒子不會由膜中突出,膜 製造費用有變高之情形。 因此,如圖11所示般,於期望粒子的捕捉率可高至 30%以上,並且因電極門所捕捉之粒子數提高而減低費用 上,膜全體的最期望厚度爲上述粒子1之直徑+10%以下, 其次期望膜厚爲粒子之6/4=1.5倍以下,再次期望厚度爲 8/4 = 2倍以下。 以上,雖然示出關於2層層合所構成之樹脂膜材料的 檢討結果,但本發明並非僅限定於此,於3層、4層或更 -27- 201013710 多層之樹脂膜片亦可適用。 又.,粒子設置層的厚度與未設置粒子層厚度的比率, 期望如圖11所示般,粒子捕捉率可高至48 %以上之NCF 層厚度/ ACF層厚度=6/4 = 1.5倍以下。 另外,以膜連接之電極高度高之情形中,必須加大膜 全體的厚度。於此情形中,其次期望之NCF層厚度/ACF 層厚度之比率爲,粒子捕捉率可爲4 5 %以上之NCF層厚度 /ACF層厚度=10/4 = 2.5倍以下。再次期望爲粒子捕捉率可 爲40%以上之NCF層厚度/ACF層厚度=12/4 = 3倍以下。 以上,雖然示出關於2層層合所構成之樹脂膜材料的 檢討結果,但本發明並非僅限定於此,於3層、4層或更 多層之樹脂膜片亦可適用。 因此,於提高粒子捕捉率上,必須縮小樹脂膜全體的 厚度,但若考慮樹脂膜與電極4的接黏強度,則在圖1所 示之XZ平面的剖面中,充滿樹脂材料的份量必須爲最低 〇 此處,根據上方電極4的移動,圖1所示之XZ平面 中充滿樹脂材料之樹脂膜最低厚度Hmin如圖1所示般, 欲連接之1對電極高度和爲Hl( =HU + Hs ),電極4、6 之寬的平均値爲Wl,x方向之正和負側設置之電極4間 隔(間距)爲W2之情形中,以式(9 )表示。In other words, for example, in the case where ((W2-W1) X ( H1+H2 ) 3 ) / ( X H23) is less than 50, the film on the electrode 6 side of the electrode 4 on the reverse side of the electrode height is high. In the case where the layer is set to the particle 1' and ((W2-W1) X ( H1+H2 ) 3) / ( WlxH23 ) is 90 or more, the particle 1 is provided by the film layer on the side of the electrode 4 having a high electrode height. 'A resin film suitable for the electrode shape or electrode structure of an electronic member is used in order to improve the capture rate of the particle 1. The resin material of the resin film may be used to disperse conductive particles in an adhesive composition containing a latent curing agent for epoxy resin or epoxy resin and a phenoxy resin. @Electrode shape, for example, in the case where ((W2-W1) χ(Η1+Η2) 3) / (W 1 xH2 3 ) is 90 or more, in the pre-stage of joining formation using a 2-layer resin film In the film layer on the side of the electrode 4 having a high electrode height, the particle 1 is provided and the formed electronic component is connected to improve the particle trapping rate. The (electrode pitch) / (electrode height) of each electrode shape is plotted on the horizontal axis, and the (capture rate set by the first layer) / (the capture rate of the second layer is set) is vertical and horizontal, and the result of the alignment is shown in FIG. When the (electrode pitch) / (electrode height) is 0.7 or more, the particles 1 are provided on the electrode layer side of the electrode 4 having a high electrode height in the pre-stage of the connection molding using the two-layer resin film at -26-201013710. Connect the formed electronic parts to increase the particle capture rate. Here, in the case of using the electrode shape (1) of Fig. 2, the thickness of the entire two resin films was changed to 10, 12, 14, and 16 μm. Further, the layer thickness of the particles 1 is changed to 4, 6, and 8 μm, and for all the layers, the physical properties of the resin material are in the form of a heat generating reaction type and a viscosity type φ according to the formulas (1) to (8), and the respective parameters are Use Table 1 for details. The results of the particle capture rate are shown in Fig. 11. Similarly to the results shown in Figs. 3 to 6, in the case where the thickness of the layer 1 of the particles 1 is small, the particle trapping rate can be improved. Further, if the thickness of the entire resin film is small, the trapping rate of the particles 1 can be improved. When the thickness of the entire resin film is large and the particle trapping rate is low, the amount of discharge of the resin and the particles in the Υ direction shown in FIG. 1 increases. In the above paragraph [0180], it is described that the thickness of the particle-setting layer is desirably +10% or less of the diameter of the particle 1, but the particle is approximately equal to the film thickness, and it is necessary to suppress variations in film thickness and prevent the particles from being coated by the film. In the middle, the film manufacturing cost has become higher. Therefore, as shown in FIG. 11, the capture ratio of the desired particles can be as high as 30% or more, and the maximum desired thickness of the entire film is the diameter of the above-mentioned particles 1 due to an increase in the number of particles captured by the electrode gate. 10% or less, the film thickness is preferably 6/4 = 1.5 times or less of the particles, and the thickness is desirably 8/4 = 2 times or less. As described above, the results of the review of the resin film material composed of the two-layer laminate are shown. However, the present invention is not limited thereto, and a multilayer resin film of 3 layers, 4 layers or -27-201013710 may be applied. Further, the ratio of the thickness of the particle-setting layer to the thickness of the particle layer is not required, and as shown in Fig. 11, the particle capture rate can be as high as 48% or more of the NCF layer thickness / ACF layer thickness = 6/4 = 1.5 times or less. . Further, in the case where the height of the electrode to which the film is connected is high, it is necessary to increase the thickness of the entire film. In this case, the ratio of the thickness of the NCF layer/the thickness of the ACF layer which is expected next is such that the NCF layer thickness / ACF layer thickness = 10/4 = 2.5 times or less of the particle capturing ratio of 45 % or more. It is again expected that the NCF layer thickness/ACF layer thickness of the particle capturing ratio of 40% or more = 12/4 = 3 times or less. As described above, the results of the review of the resin film material composed of the two-layer laminate are shown. However, the present invention is not limited thereto, and a resin film of three, four or more layers may be applied. Therefore, in order to increase the particle trapping rate, it is necessary to reduce the thickness of the entire resin film. However, considering the bonding strength between the resin film and the electrode 4, the portion of the XZ plane shown in Fig. 1 must be filled with the resin material. At the lowest point, according to the movement of the upper electrode 4, the minimum thickness Hmin of the resin film filled with the resin material in the XZ plane shown in Fig. 1 is as shown in Fig. 1, and the height of the pair of electrodes to be connected is H1 (=HU + Hs), the average 値 of the width of the electrodes 4, 6 is W1, and the interval (pitch) of the electrode 4 provided on the positive and negative sides in the x direction is W2, and is represented by the formula (9).

Hmin= ( ( W2-W1 ) /W2 ) χΗΙ ··· (9) 但,於樹脂膜中,因爲需要設置粒子,故可提高粒子 捕捉率之樹脂膜全體的厚度期望爲「Hmin= ( ( W2-W1 ) 201013710 /W2) χΗ1+粒徑」以下。 因此,以1層以上所構成之內含粒子之樹脂膜材料予 以電連接的電子零件,於連接成形之前階段中以電極間設 置1層以上所構成之內含粒子1的樹脂膜材料全體厚度, 例如,若爲「(( W2-W1 ) /W2 ) χΗ1 +粒徑」以下,則以 內含粒子之樹脂膜予以電連接的電子零件,可提高粒子的 捕捉率。 φ 以上,雖於2層以上之樹脂膜材料的粒子設置層、與 未設置粒子之層,示出數層未分割之例,但本發明並非僅 限定於此,可將粒子設置層、和未設置粒子之層分割成2 層以上。 又’以上,雖然使用2層以上之樹脂膜材料的粒子設 置層、與未設置粒子之層的物性値爲完全相同之表1之値 ,但本發明並非僅限定於此,可使用各層不同物性値的樹 脂膜。又,以上,雖示出使用環氧樹脂之解析結果,但本 • 發明並非僅限定於此,可使用任意的樹脂材料。 以下之檢討中,示出關於成形前電極4、6間存在之 樹脂膜中的粒子1數、與成形後電極4、6間夾住之粒子1 數之比率所定義的粒子捕捉率可提高之樹脂膜材料的物性 値。 樹脂膜片之樹脂材料,可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中,視 需要,分散導電性粒子者。 關於厚度方向之2層層合所構成的樹脂膜材料,對於 -29- 201013710 2層中僅1層之樹脂膜層中具有設置粒子1之導電層的樹 脂膜材料,使用流動解析進行檢討。電極4、6及樹脂膜 材料之尺寸示於圖15。另外,設定X方向之正、負方向 均對稱的解析模型。 此處,2層樹脂膜內,將連接上方電極4配置之樹脂 膜層定義爲第1層,與下方電極6連接配置之樹脂膜層定 義爲第2層,將粒子設置層(導電層)設置於第2層,且 未內含粒子1之層(絕緣層)設置於第1層,下方電極6 的高度Hs = 0.5pm。 此處,粒徑爲4μιη、粒子設置層的厚度爲8μιη、樹脂 膜全體的厚度一定爲16μιη。又,內含之粒數爲400個。 又,上方電極4之溫度爲歷10秒鐘由25 °C上升至 2〇〇°C,並且藉由此上方電極4的溫度上升而將樹脂膜加 熱。又,上方電極4爲在下方電極6的方向上移動,且初 期之上方電極4的移動速度爲lxl〇-3m/s。另外,於流動 解析上使用常用之流體解析軟體。 解析中,考慮初期之上方電極4的移動速度、和樹脂 2的黏度變化並且計算上方電極4的移動速度,粒子1在 樹脂2內以假想的標記粒子型式設置。另外,解析所用之 發熱反應式爲使用式(1)〜(5),黏度式爲使用(6)〜 (8)。此處,關於式(6) ~(8)所示之黏度式係數,於 第2層之導電層使用樹脂材料(D之値,於第1層之絕 緣層使用樹脂材料(1) (2) (3)三個樹脂材料値。另 一方面,關於式(1)〜(5)所示之發熱反應式的係數, -30- 201013710 於第 1層與第2層之値爲相同使用樹脂材料 又’樹脂2爲使用熱硬化性樹脂之環氧樹脂, (Ϊ)〜(3)之物性値(黏度式之係數、發熱 之係數、密度、熱傳導率、比熱)示於表i。 〔1 )之値。 且關於樹脂 反應速度式Hmin= ( ( W2 - W1 ) / W2 ) χΗΙ ··· (9) However, since it is necessary to provide particles in the resin film, the thickness of the entire resin film which can increase the particle capture rate is desirably "Hmin= ( ( W2 -W1 ) 201013710 /W2) χΗ1+ particle size" or less. Therefore, in the electronic component in which the resin film material containing the particles composed of one or more layers is electrically connected, the entire thickness of the resin film material containing the particles 1 composed of one or more layers between the electrodes is formed in the stage before the connection molding. For example, in the case of "((W2-W1) /W2) χΗ1 + particle size" or less, an electronic component electrically connected to a resin film containing particles can increase the particle capture rate. φ or more, although the particle-providing layer of the resin film material of two or more layers and the layer in which the particle is not provided are shown as an example in which several layers are not divided, the present invention is not limited thereto, and the particles may be provided with layers and Set the layer of particles into two or more layers. Further, although the particle-setting layer of the resin film material of two or more layers and the physical properties of the layer in which the particles are not provided are completely the same as in Table 1, the present invention is not limited thereto, and different physical properties of each layer may be used. A resin film of ruthenium. Further, although the results of analysis using an epoxy resin have been described above, the present invention is not limited thereto, and any resin material can be used. In the following review, the particle capture ratio defined by the ratio of the number of particles in the resin film existing between the electrodes 4 and 6 before forming and the number of particles 1 sandwiched between the electrodes 4 and 6 after molding can be improved. The physical properties of the resin film material. The resin material of the resin film can be used for the adhesive composition containing an epoxy resin, a latent curing agent for an epoxy resin, and a phenoxy resin, and if necessary, the conductive particles are dispersed. In the resin film material which is formed by the two-layer lamination in the thickness direction, the resin film material having the conductive layer in which the particles 1 are provided in the resin film layer of only one of the two layers of -29-201013710 is examined by flow analysis. The dimensions of the electrodes 4, 6 and the resin film material are shown in Fig. 15. In addition, an analytical model in which both the positive and negative directions in the X direction are symmetric is set. Here, in the two-layer resin film, the resin film layer in which the upper electrode 4 is connected is defined as the first layer, the resin film layer which is disposed in connection with the lower electrode 6 is defined as the second layer, and the particle-setting layer (conductive layer) is provided. In the second layer, the layer (insulating layer) not containing the particles 1 is provided on the first layer, and the height Hs of the lower electrode 6 is 0.5 pm. Here, the particle diameter is 4 μm, the thickness of the particle-setting layer is 8 μm, and the thickness of the entire resin film is always 16 μm. In addition, the number of grains contained therein is 400. Further, the temperature of the upper electrode 4 is raised from 25 °C to 2 °C for 10 seconds, and the resin film is heated by the temperature rise of the upper electrode 4. Further, the upper electrode 4 is moved in the direction of the lower electrode 6, and the moving speed of the upper electrode 4 at the initial stage is lxl 〇 -3 m/s. In addition, a commonly used fluid analysis software is used for flow analysis. In the analysis, in consideration of the initial moving speed of the electrode 4 and the change in the viscosity of the resin 2 and calculating the moving speed of the upper electrode 4, the particles 1 are provided in the resin 2 in a virtual mark particle pattern. Further, the heat generation reaction equation used for the analysis is the use of the formulae (1) to (5), and the viscosity formula is (6) to (8). Here, regarding the viscosity coefficient shown in the formulas (6) to (8), a resin material is used for the conductive layer of the second layer (after D, the resin material (1) is used for the insulating layer of the first layer (2) (3) Three resin materials 値. On the other hand, regarding the coefficient of the heat generation reaction formula represented by the formulas (1) to (5), -30-201013710 is the same as the resin layer of the first layer and the second layer. Further, 'resin 2 is an epoxy resin using a thermosetting resin, and the physical properties (coefficient of viscosity, coefficient of heat generation, density, thermal conductivity, specific heat) of (Ϊ) to (3) are shown in Table i. [1) After that. And about the resin reaction speed

-31 - 201013710 樹脂 (14) 1.0x10« 1200000 15450 5800 in I 1J6X10» 0.98 t^uxur2 「82X10» 3.3X1CP Ν 3 樹脂 (13) 0^8 1J8X10-* 4.82 X1(P x Iff· rw 0.02 樹脂 (12) 0.95 J 1^8x1(Tz 4.B2X103 3^X10* eg 0.40 樹脂 (11) 098 iMxttr1 4.8ZX101 3*3 x 10* 0.10 樹脂 (10) 0.98 1M8X Ut* 4.82x10s 3*3X10» 0.13 樹脂 ⑼ 0.98 1J8X10*2 4Λ2Χ103 X3X10* CM an 樹脂 ⑻ i 0.1» x to4 j 4.82X101 3JX101 CM s S 3 樹脂 ⑺ 1.0X10" 68000 15450 7000 s 136 x t0* αββ ojaxitr2 4.82X103 3>3X1炉 C4 N 樹脂 ⑹ 0.98 os4xurz 4,82 x 103 3·3Χ1(Ρ C4 3 樹脂 (5) |.⑽ U5XI0-* 4,82 x10s 13X103 Ol 3 |樹脂 1⑷ 0.98 j 3.7ixKrJ 4.82 x10s 3·3Χ10> C4 3 樹脂 ⑶ α9β iMxur2 4.82 x 103 6.0X10» CM 3 樹脂 ⑵ 0.96 1 jjaxio-1 4.82 X10> 2.〇χΐσ* CM 3 樹脂 (1) a98 i^sxur2 (82X103 3.3X10» CX 3 jD iS ίδ Z S C? creel 彎 Λ «f- 密度 (ke/m3) 比熱 (J/(kg*K)) mm導率 (W/(m-K)) -32- 201013710 使用本解析手法’算出粒子1的捕捉率。將設定黏度 之時間變化解析所求出的結果,示於圖16。如此,另外, 材料(1)之最低黏度設定成比材料(2)更高1.3倍,比 材料(3)更低1.3倍。另外’材料(3)爲比(1)之最 低黏度更低,故例如重量平均分子量比(丨)更小。 粒子1之捕捉率的解析結果示於圖17,基板4、6間 隔之時間變化示於圖1 8。 φ 如圖17所示般’即使於第1圖絕緣層與第2層導電 層之黏度上加以差異’亦不會於粒子捕捉率上產生差異。 於此粒子捕捉率不會產生差異的理由,使用圖18之結果 予以考察。圖1 8爲示出基板間隔的時間變化,於棋盤間 隔爲與粒徑相等之4μιη之時,決定基板間夾住之粒子數與 粒子的捕捉率。 如圖1 8所示般,棋盤間隔爲與粒徑相等之時間爲約 1.5s。但,如圖16所示般,本次設定之樹脂材料(1) ~( φ 3)的黏度爲以直到1 · 5 s之黏度的時間變化爲相等’並且 僅以最低黏度加以設定差異。因此,由於決定粒子捕捉率 之直到1.5s的黏度變化上不會產生差異’故如圖16所示 般,認爲即使於第1圖絕緣層與第2層導電層之黏度上產 生差異,亦不會在粒子捕捉率上產生差異之結果。 如此,即使於第1層絕緣層與第2層導電層之最低黏 度上產生差異亦無法提高粒子捕捉率。因此’以下在直到 1.5s之連接成形的初期階段中,使用對第1層絕緣層與第 2層導電層之黏度加以差異之材料進行檢討° -33 - 201013710 解析中使用圖15之形狀,粒徑爲4μιη,第2層之粒 子設置層(導電層)厚度爲4、6、8μηι三個水準,且樹脂 膜片全體之厚度一定爲16 μιη。此處,關於式(6)〜(8) 所示之黏度式,於第2層導電層使用樹脂材料(1),於 第1層絕緣層使用樹脂材料(1) 、(4)〜(8)。另一方 面,關於式(1)〜(5)所示之發熱反應式,第1層與第2 層之物性値爲相同使用樹脂材料(1 )。又,樹脂2爲使 用熱硬化性樹脂之環氧樹脂,關於樹脂(1) ,(4)〜(8 )之物性値(黏度、密度、熱傳導率、比率、發熱反應) 示於表1。 此處,樹脂(4 )爲相比於樹脂(1 ),將25 °C之連接 前黏度設定爲2倍,樹脂(5 )爲相比於樹脂(1 ),將25 °C之連接前黏度設定爲1/1.2倍,樹脂(6)爲相比於樹脂 (1 ),將25°C之連接前黏度設定爲1/2倍,樹脂(7 )爲 相比於樹脂(1),將25°C之連接前黏度設定爲1/5倍, 樹脂(8 )爲相比於樹脂(1 ),將25 °C之連接前黏度設定 爲1/10倍。 樹脂膜片之樹脂材料,可使用於含有環氧樹脂、環氧 樹脂之潛在性硬化劑及苯氧基樹脂之接黏劑組成物中,分 散導電性粒子者。 又,上方電極4之溫度爲歷10秒鐘由25 °C上升至 200 °C,並且上方電極4爲在下方電極6的方向上移動。 初期之上方電極4的移動速度爲lxl0_3m/s。另外,材料 (4)爲比(1)之黏度高,故例如重量平均分子量比(1 -34- 201013710 )更大。 解析所用之樹脂黏度之時間變化的計算結果示於圖19 。此處,示出關於樹脂(1) 、(4) 、(6) 、(8)的黏 度變化,示出時間Os之黏度爲25 t之連接成形前的黏度 。如此,藉由在第1層絕緣層使用樹脂(5 )〜(8 ) ’則 可賦予與第2層導電層所用樹脂(1)之初期狀態的黏度 差。 φ 粒子捕捉率之解析結果示於圖20。若如此於第1層絕 緣層使用樹脂(4),則絕緣層的黏度比導電層更高,故 藉由基板間壓縮使黏度低的導電層之樹脂材料流動,導電 層之樹脂材料難殘存於基板間,且粒子捕捉率變低。 另一方面,若於第1層絕緣層使用樹脂(5)〜(8) ,則絕緣層的黏度比導電層更低,故藉由基板間壓縮使黏 度低的絕緣層之樹脂材料流動,導電層之樹脂材料易於基 板間殘留,絕緣層與導電層之黏度差愈大則粒子捕捉率愈 φ 高。又,設置粒子之導電層厚度愈小則粒子捕捉率愈高。 如此,關於第1層絕緣層與第2層導電層所用之樹脂 ,於25 °C中之黏度若第1層絕緣層比第2層導電層更低, 則可提高粒子捕捉率。特別’於25°C中之黏度若第1層絕 緣層比第2層導電層更低0.5倍以下,則可提高粒子捕捉 率。另外,於黏度之測定上,使用利用平行板或圓錐/板 之迴轉型黏度計,內含粒子之膜層爲以內含粒子之狀態, 於剪切速度〇.l(l/s) 、25 °C中進行連接成形前的膜測定 -35- 201013710 以上,示出關於2層樹脂膜的結果,但本發明並非僅 被限定於此,對於層合2層以上任意之樹脂片可使用。又 ,以上雖進行賦予2層黏度差的檢討,但本發明並非僅被 限定於此,絕緣性樹脂膜層以差示掃描熱量計所測定之發 熱反應速度的最大値,藉由作成比內含導電性粒子之樹脂 膜層更低溫側的構造,則可提高粒子捕捉率。 例如,關於表1所示之樹脂(14 )和樹脂(1 ),對 於第2層(導電層)所用之樹脂(14)、與第1層(絕緣 層)所用之樹脂(1)的發熱反應速度(dQ/dt ),關於升 溫速度5°C /min時之發熱反應速度與樹脂溫度之關係的差 示掃描熱量計的測定結果示於圖21。如此,樹脂(14)於 低樹脂溫度下之反應速度爲最大値。 又,第1層、第2層之黏度均如表1所示般使用相等 値。因此,若以低樹脂溫度下之發熱反應速度爲最大,則 式(6)~(8)所示之α (反應率)函數之黏度爲在低溫 下變高。因此,第1層絕緣層比第2層導電層之發熱反應 速度的最大値若於更低溫側,則第1層絕緣層比第2層導 電層的黏度更高,即使藉由基板的壓縮亦難以流動,故可 提高粒子的捕捉率。另外,於發熱反應速度之測定上使用 差示熱計’如圖8所示般,於發熱反應速度與樹脂溫度之 關係中’將發熱反應速度最大値爲位於低溫側的樹脂,使 用於導電層。 其次’根據第1層絕緣層與第2層導電層之熱傳導率 上加以差異時的解析,進行粒子捕捉率的檢討。解析中使 -36- 201013710 用圖12之形狀,粒徑爲4 μιη,第2層粒子設置層(導電 層)的厚度爲以4、8μηι之二個水準,且樹脂膜片全體之 厚度一定爲16μιη。 關於式(1)〜(5)所示之發熱反應式,式(6)〜(8 )所示之黏度式,於第2層導電層中使用表1所示之樹脂 (1)。於第1層絕緣層中使用關於式(1)〜(5)所示之 發熱反應式,式(6)〜(8)所示之黏度式爲與樹脂(1) φ 相同,但僅熱傳導率爲比樹脂(1 )更低的樹脂(9 )〜( 13)。樹脂(9)〜(13)之物性値示於表1。另外,材料 (9 ) ~ ( 1 3 )爲比(1 )之熱傳導率低,故配合例如雲母 等之低熱傳導充塡劑。 又,上方電極4之溫度爲歷10秒鐘由25 °C上升至 2 00 °C,上方電極4爲在下方電極6的方向上移動。初期 之上方電極4的移動速度爲lxl〇'3m/s。另外,於流動解 析上使用常用之流體解析軟體。 φ 粒子捕捉率之解析結果示於圖22。圖22(a)爲示出 設置粒子之導電層厚度爲8 μιη之情形’圖22 ( b )爲示出 設置粒子1之導電層厚度爲4μ®之情形的結果。如此,於 第1層絕緣層之熱傳導率爲比第2層導電層之熱傳導率更 低之情形中,可提高粒子捕捉率。此時’於樹脂膜片中由 上方電極4傳熱,若第1層絕緣層之熱傳導率低,則難傳 熱至第2層導電層,故導電層的黏度比絕緣層更高。因此 ,藉由電極間的壓縮’導電層之樹脂難以流動’故可提高 粒子捕捉率。特別,如圖22所示般’若第1層未內含導 -37- 201013710 電粒子之絕緣層的熱傳導率,比第2層內含導電粒子之導 電層更小0.7倍以下,則可提高粒子捕捉率。 又’於設置粒子之導電層厚度爲4 μιη之情形中,因爲 第1層熱傳導率低的絕緣層厚度大,故比導電層厚度爲 8μιη之情形難對第2層導電層傳熱,因此提高粒子捕捉率 〇 又’以下雖然示出關於2層層合的樹脂膜片,但本發 明並非僅被限定於此,可使用於2層以上層合之樹脂膜片 。其一例爲關於3層層合的樹脂膜片,示於圖23。此處, 於形成樹脂膜片最外層表面之厚度方向的最上方設置絕緣 層,於最下方設置導電層,於最上方絕緣層與最下層導電 層夾住設置之絕緣層8的熱傳導率,其特徵爲比上述最上 方絕緣層與最下層導電層更低。 因爲此最上方絕緣層與最下層導電層夾住設置之絕緣 層8的熱傳導率低,故難對最下層之導電層傳熱,導電層 的黏度不會下降,藉由電極間的壓縮,導電層樹脂難以流 動,故可提高粒子捕捉率。另外’熱傳導率的測定’係內 含粒子之膜層爲以內含粒子之狀態’使用連接成形前之樹 脂膜,以25 °C以下之測定溫度進行。 以上,雖然示出2層以上之樹脂膜材料的粒子設置層 、與未設置粒子之層,於複數層中未分割之例’但本發明 並非僅被限定於此,粒子設置層、與未設置粒子之層可分 割成2層以上。 又,以上,雖然示出使用環氧樹脂之解析結果’但本 -38- 201013710 發明並非僅被限定於此,可使用任意的樹脂材料。 又,以上,雖然個別描述關於粒子設置位置與導電層 與絕緣層的物性値差,但本發明並非僅被限定於此,於厚 度方向層合2層以上樹脂膜層之內含導電性粒子的樹脂膜 片中,由樹脂膜片之兩表面位於等距離之厚度方向的中心 面,鄰接內部含有樹脂膜層或上述厚度方向中心面之至少 一個樹脂膜層,以未內含上述導電性粒子之絕緣性樹脂膜 φ 層所形成的樹脂膜片,於25°C中連接成形前之絕緣層黏度 爲比導電層更低,又,絕緣層以差示掃描熱量計所測定之 發熱反應速度的最大値爲比導電層更低溫側,又,絕緣層 的熱傳導率比導電層更低爲其特徵的樹脂膜片亦可使用。 【圖式簡單說明】 圖1爲示出使用含有具導電性之粒子的樹脂材料作;^ 解析對象的半導體集成電路(1C)與基板之連接成形步驟 ^ 的示意圖。 圖2爲解析中所用的電極形狀。 圖3爲在樹脂膜片之厚度全體設置粒子1時之粒子1 捕捉率的計算結果。 圖4爲粒子設置層厚度爲4μϊη時之粒子捕捉率的計算 結果。 圖5爲粒子設置層厚度爲6μιη時之粒子捕捉率的計算 結果。 圖6爲粒子設置層厚度爲8μιη時之粒子捕捉率的計算 -39- 201013710 結果。 圖7爲關於形狀(1),使用2層樹脂膜之連接成形 中,X方向之樹脂流動速度分佈與粒子位置。 圖8爲關於形狀(1),使用3層樹脂膜之連接成形 中,X方向之樹脂流動速度分佈與粒子位置。 圖9爲各電極形狀之(第1層設置粒子1時之粒子捕 捉率)/(第2層設置粒子1時之粒子捕捉率)的計算結 果。 籲 圖10爲關於第1層設置粒子時之捕捉率/第2層設置 粒子時之捕捉率的計算結果。 圖11爲將2層樹脂膜片全體之厚度以10、12、14、 1 6 μιη變更時之粒子捕捉率的計算結果。 圖12爲關於2層構造之樹脂膜片,於厚度方向之中 心面部分設置未內含粒子之絕緣層的構造。 圖13爲關於3層構造之樹脂膜片,於厚度方向之中 心面部分設置未內含粒子之絕緣層的構造。 @ 圖14爲關於4層構造之樹脂膜片,於厚度方向之中 心面部分設置未內含粒子之絕緣層的構造。 圖15爲解析中所用的電極形狀。 圖16爲關於樹脂(1) (2) (3)之黏度之時間變化 的計算結果。 圖17爲在導電層使用樹脂(1),在絕緣層使用樹脂 (1) (2) (3)時之粒子捕捉率的計算結果。 圖18爲在導電層使用樹脂(1),在絕緣層使用樹脂 -40- 201013710 (1 ) ( 2 ) ( 3 )時之棋盤間隔之時間變化的計算結果。 圖19爲關於樹脂(1) (4) (6) (7) (8)之黏度 之時間變化的計算結果。 圖20爲在導電層使用樹脂(1),在絕緣層使用樹脂 (1) (4) (6) (7) (8)時之粒子捕捉率的計算結果 〇 圖21爲關於樹脂(1) (Μ)之發熱反應速度與樹脂 φ 速度之關係的計算結果。 圖22爲在導電體使用樹脂(1 ),在絕緣層使用樹脂 (9) (10) (11) (12) (13)時之粒子捕捉率的計算 結果。 圖23爲關於3層構造之樹脂膜片,於最上方之絕緣 層和最下層之導電層所夾住設置之中間層,設置未內含熱 傳導率低之粒子之絕緣層的構造。 圖24爲示出將各電極形狀之(電極間距)/(電極高 φ 度)作爲橫軸,(第1層設置之補足率)/(第2層設置 之補足率)作爲縱軸並且整理之結果圖。 【主要元件符號說明】 1 :導電性粒子 2 ·樹脂材料 3:半導體集成電路(1C) 4 :上方電極 5 :基板 -41 - 201013710 6 :下方電極 7:由樹脂膜片之厚度方向中心點所構成之面 8:最上方絕緣層與最下層導電層夾住設置的絕緣層 參-31 - 201013710 Resin (14) 1.0x10« 1200000 15450 5800 in I 1J6X10» 0.98 t^uxur2 "82X10» 3.3X1CP Ν 3 Resin (13) 0^8 1J8X10-* 4.82 X1(P x Iff· rw 0.02 Resin ( 12) 0.95 J 1^8x1 (Tz 4.B2X103 3^X10* eg 0.40 Resin (11) 098 iMxttr1 4.8ZX101 3*3 x 10* 0.10 Resin (10) 0.98 1M8X Ut* 4.82x10s 3*3X10» 0.13 Resin (9) 0.98 1J8X10*2 4Λ2Χ103 X3X10* CM an Resin (8) i 0.1» x to4 j 4.82X101 3JX101 CM s S 3 Resin (7) 1.0X10" 68000 15450 7000 s 136 x t0* αββ ojaxitr2 4.82X103 3>3X1 Furnace C4 N Resin (6) 0.98 Os4xurz 4,82 x 103 3·3Χ1(Ρ C4 3 Resin (5) |.(10) U5XI0-* 4,82 x10s 13X103 Ol 3 |Resin 1(4) 0.98 j 3.7ixKrJ 4.82 x10s 3·3Χ10> C4 3 Resin (3) α9β iMxur2 4.82 x 103 6.0X10» CM 3 Resin (2) 0.96 1 jjaxio-1 4.82 X10> 2.〇χΐσ* CM 3 Resin (1) a98 i^sxur2 (82X103 3.3X10» CX 3 jD iS ίδ ZSC? creel Curved «f- Density (ke/m3) specific heat (J /(kg*K)) mm conductivity (W/(mK)) -32- 201013710 Calculate the capture rate of particle 1 using this analysis method. The result obtained by analyzing the time change of the set viscosity is shown in Fig. 16. Thus, in addition, the minimum viscosity of the material (1) is set to be 1.3 times higher than the material (2) and 1.3 times lower than the material (3). Further, the material (3) has a lower viscosity than the lowest viscosity of (1), and thus, for example, the weight average molecular weight ratio (丨) is smaller. The analysis results of the capture ratio of the particles 1 are shown in Fig. 17, and the time variation between the substrates 4 and 6 is shown in Fig. 18. As shown in Fig. 17, the difference in the viscosity of the insulating layer of the first insulating layer and the second conductive layer does not cause a difference in the particle capturing ratio. The reason why the particle capture rate does not differ is examined using the results of Fig. 18. Fig. 18 is a graph showing the temporal change of the substrate interval. When the checkerboard spacing is 4 μm equal to the particle diameter, the number of particles sandwiched between the substrates and the capture ratio of the particles are determined. As shown in Fig. 18, the checkerboard spacing is equal to the particle size for about 1.5 s. However, as shown in Fig. 16, the viscosity of the resin materials (1) to (φ 3) set this time is equal to the time change of the viscosity up to 1 · 5 s and the difference is set only with the lowest viscosity. Therefore, since there is no difference in viscosity change up to 1.5 s in determining the particle trapping rate, as shown in FIG. 16, it is considered that even if there is a difference in the viscosity between the insulating layer of the first insulating layer and the second conductive layer, There is no difference in the particle capture rate. Thus, even if there is a difference in the lowest viscosity between the first insulating layer and the second conductive layer, the particle capturing ratio cannot be improved. Therefore, in the initial stage of joining formation up to 1.5 s, the material which differs in the viscosity of the first insulating layer and the second conductive layer is used for review. -33 - 201013710 The shape of Fig. 15 is used in the analysis. The diameter of the particle layer (the conductive layer) of the second layer is 4, 6, and 8 μm, and the thickness of the entire resin film is 16 μm. Here, regarding the viscosity type shown by the formulas (6) to (8), the resin material (1) is used for the second conductive layer, and the resin materials (1), (4) to (8) are used for the first insulating layer. ). On the other hand, regarding the heat generation reaction formula represented by the formulas (1) to (5), the resin material (1) is used in the same manner as the physical properties of the first layer and the second layer. Further, the resin 2 is an epoxy resin using a thermosetting resin, and the physical properties (viscosity, density, thermal conductivity, ratio, and exothermic reaction) of the resins (1) and (4) to (8) are shown in Table 1. Here, the resin (4) is set to 2 times the pre-bonding viscosity at 25 °C compared to the resin (1), and the resin (5) is a pre-bonding viscosity of 25 ° C compared to the resin (1). The ratio is set to 1/1.2 times, the resin (6) is set to 1/2 times the pre-bonding viscosity at 25 ° C compared to the resin (1 ), and the resin (7) is 25 compared to the resin (1). The viscosity before the connection of °C was set to 1/5 times, and the resin (8) was set to be 1/10 times the pre-bonding viscosity at 25 °C compared to the resin (1). The resin material of the resin film can be used to disperse conductive particles in an adhesive composition containing a latent curing agent for an epoxy resin or an epoxy resin and a phenoxy resin. Further, the temperature of the upper electrode 4 is raised from 25 ° C to 200 ° C for 10 seconds, and the upper electrode 4 is moved in the direction of the lower electrode 6. The moving speed of the initial upper electrode 4 is lx10_3 m/s. Further, the material (4) has a higher viscosity than (1), and thus has a weight average molecular weight ratio (1 - 34 - 201013710), for example. The calculation results of the time change of the viscosity of the resin used for the analysis are shown in Fig. 19. Here, the viscosity changes with respect to the resins (1), (4), (6), and (8) are shown, and the viscosity at the time Os of 25 t before the connection molding is shown. By using the resins (5) to (8)' in the first insulating layer, the viscosity difference from the initial state of the resin (1) used for the second conductive layer can be imparted. The analysis result of the φ particle capture rate is shown in Fig. 20. When the resin (4) is used for the first insulating layer, the viscosity of the insulating layer is higher than that of the conductive layer. Therefore, the resin material of the conductive layer having a low viscosity flows by compression between the substrates, and the resin material of the conductive layer is hard to remain. The particle capture rate is low between the substrates. On the other hand, when the resins (5) to (8) are used for the first insulating layer, the viscosity of the insulating layer is lower than that of the conductive layer, so that the resin material of the insulating layer having a low viscosity flows by compression between the substrates, and is electrically conductive. The resin material of the layer is liable to remain between the substrates, and the larger the difference in viscosity between the insulating layer and the conductive layer, the higher the particle capture rate is. Further, the smaller the thickness of the conductive layer of the particles is, the higher the particle trapping rate is. As described above, the viscosity of the resin used for the first insulating layer and the second conductive layer at 25 ° C can increase the particle trapping rate if the first insulating layer is lower than the second conductive layer. In particular, the viscosity at 25 ° C can increase the particle capture rate if the first insulating layer is 0.5 times lower than the second conductive layer. In addition, in the measurement of the viscosity, a rotary viscometer using a parallel plate or a cone/plate is used, and the film layer containing the particles is in the state of containing particles at a shear rate 〇.l (l/s), 25 Film measurement before joining and forming in °C - 35 - 201013710 The results of the two-layer resin film are shown. However, the present invention is not limited thereto, and any resin sheet of two or more layers may be used. Moreover, although the evaluation of the difference in viscosity between the two layers is performed as described above, the present invention is not limited to this, and the maximum enthalpy of the heat generation reaction rate measured by the differential scanning calorimeter of the insulating resin film layer is made by the ratio The structure of the resin film layer of the conductive particles on the lower temperature side can increase the particle trapping rate. For example, regarding the resin (14) and the resin (1) shown in Table 1, the pyrolysis reaction of the resin (14) used for the second layer (conductive layer) and the resin (1) used for the first layer (insulating layer) The speed (dQ/dt), the measurement result of the differential scanning calorimeter regarding the relationship between the heat generation reaction rate and the resin temperature at a temperature increase rate of 5 ° C /min is shown in Fig. 21 . Thus, the reaction speed of the resin (14) at a low resin temperature is the maximum enthalpy. Further, the viscosity of the first layer and the second layer was equal to that shown in Table 1. Therefore, if the exothermic reaction rate at the low resin temperature is the maximum, the viscosity of the α (reaction rate) function represented by the formulas (6) to (8) becomes high at a low temperature. Therefore, if the maximum thermal reaction rate of the first insulating layer is lower than that of the second conductive layer, the viscosity of the first insulating layer is higher than that of the second conductive layer, even if the substrate is compressed. It is difficult to flow, so the particle capture rate can be increased. In addition, in the measurement of the rate of reaction of the exothermic reaction, as shown in FIG. 8, in the relationship between the reaction rate of the exothermic reaction and the temperature of the resin, the rate of the exothermic reaction is maximized to be the resin located on the low temperature side, and is used for the conductive layer. . Next, the particle trapping rate was evaluated based on the analysis when the thermal conductivity of the first insulating layer and the second conductive layer were different. In the analysis, -36-201013710 is used in the shape of Fig. 12, the particle size is 4 μηη, and the thickness of the second layer particle-setting layer (conductive layer) is two levels of 4, 8 μm, and the thickness of the entire resin film is constant. 16μιη. With respect to the heat generating reaction formulas represented by the formulae (1) to (5), the viscosity formulas represented by the formulae (6) to (8) are used for the second layer conductive layer using the resin (1) shown in Table 1. The heat generation reaction formulas shown in the formulas (1) to (5) are used in the first insulating layer, and the viscosity formulas represented by the formulas (6) to (8) are the same as the resin (1) φ, but only the thermal conductivity. Resin (9)~(13) which is lower than resin (1). The physical properties of the resins (9) to (13) are shown in Table 1. Further, since the materials (9) to (13) have a lower thermal conductivity than (1), they are blended with a low heat conduction filler such as mica. Further, the temperature of the upper electrode 4 rises from 25 ° C to 200 ° C for 10 seconds, and the upper electrode 4 moves in the direction of the lower electrode 6. The moving speed of the electrode 10 at the initial stage is lxl 〇 '3 m/s. In addition, a commonly used fluid analysis software is used for flow analysis. The analysis result of the φ particle capture rate is shown in Fig. 22. Fig. 22 (a) is a view showing a case where the thickness of the conductive layer of the particles is set to 8 μm. Fig. 22 (b) is a result showing a case where the thickness of the conductive layer of the particle 1 is set to 4 μ?. Thus, in the case where the thermal conductivity of the first insulating layer is lower than the thermal conductivity of the second conductive layer, the particle trapping rate can be improved. At this time, heat is transferred from the upper electrode 4 to the resin film. If the thermal conductivity of the first insulating layer is low, it is difficult to transfer heat to the second conductive layer, so that the conductive layer has a higher viscosity than the insulating layer. Therefore, since the resin which is compressed between the electrodes is difficult to flow, the particle trapping rate can be improved. In particular, as shown in Fig. 22, if the thermal conductivity of the insulating layer of the first layer without the conductive layer of -37-201013710 is 0.7 times or less smaller than the conductive layer containing the conductive particles in the second layer, it can be improved. Particle capture rate. Further, in the case where the thickness of the conductive layer of the particles is set to 4 μm, since the thickness of the insulating layer having a low thermal conductivity of the first layer is large, it is difficult to transfer heat to the second conductive layer even when the thickness of the conductive layer is 8 μm. The particle trapping rate 〇 is described below as a resin film sheet which is laminated in two layers. However, the present invention is not limited thereto, and can be used for a resin film sheet in which two or more layers are laminated. An example of this is a three-layer laminated resin film, which is shown in FIG. Here, an insulating layer is provided on the uppermost side in the thickness direction of the outermost surface of the resin film, and a conductive layer is provided on the lowermost layer, and the thermal conductivity of the insulating layer 8 provided between the uppermost insulating layer and the lowermost conductive layer is sandwiched. The feature is lower than the uppermost insulating layer and the lowermost conductive layer. Since the thermal conductivity of the insulating layer 8 sandwiched between the uppermost insulating layer and the lowermost conductive layer is low, it is difficult to transfer heat to the conductive layer of the lowermost layer, the viscosity of the conductive layer is not lowered, and the conduction between the electrodes is conducted. Since the layer resin is difficult to flow, the particle trapping rate can be improved. Further, the measurement of the thermal conductivity is carried out by using a resin film in the state of containing particles in a state in which particles are contained, and measuring at a temperature of 25 ° C or lower. In the above, the particle-providing layer of the resin film material of two or more layers and the layer in which the particles are not provided are not divided into the plurality of layers. However, the present invention is not limited thereto, and the particle-setting layer is not provided. The layer of particles can be divided into two or more layers. Further, although the results of the analysis using the epoxy resin have been described above, the invention is not limited thereto, and any resin material can be used. Further, although the above describes the difference in physical properties between the particle placement position and the conductive layer and the insulating layer, the present invention is not limited thereto, and the conductive particles are laminated in the resin film layer of two or more layers in the thickness direction. In the resin film, at least one resin film layer including the resin film layer or the thickness direction center surface is adjacent to the center surface of the resin film sheet in the thickness direction of the equidistant distance, so as not to contain the above-mentioned conductive particles. The resin film formed of the insulating resin film φ layer has a lower viscosity of the insulating layer before joining and forming at 25 ° C than the conductive layer, and the insulating layer has the largest heat generating reaction rate measured by a differential scanning calorimeter. A resin film having a lower temperature side than the conductive layer and a lower thermal conductivity than the conductive layer may also be used. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a step of forming a connection between a semiconductor integrated circuit (1C) and a substrate using a resin material containing conductive particles; Figure 2 shows the shape of the electrode used in the analysis. Fig. 3 is a calculation result of the particle 1 capture ratio when the particles 1 are provided over the entire thickness of the resin film. Fig. 4 is a graph showing the calculation results of the particle capturing ratio when the particle layer thickness is 4 μ?. Fig. 5 is a graph showing the calculation results of the particle capturing ratio when the particle layer thickness is 6 μm. Fig. 6 is a graph showing the calculation of the particle capture ratio when the particle layer thickness is 8 μm -39 - 201013710. Fig. 7 is a view showing the resin flow velocity distribution and the particle position in the X direction in the connection molding using the two-layer resin film in the shape (1). Fig. 8 is a view showing the resin flow velocity distribution and the particle position in the X direction in the connection molding using the three-layer resin film in the shape (1). Fig. 9 shows the calculation results of the shape of each electrode (the particle trapping rate when the particle 1 is placed in the first layer) / (the particle capturing ratio when the particle 1 is placed in the second layer). Fig. 10 is a calculation result of the capture rate when the particles are set in the first layer and the capture rate when the particles are set in the second layer. Fig. 11 shows the calculation results of the particle trapping ratio when the thickness of the entire two resin sheets was changed by 10, 12, 14, and 16 μm. Fig. 12 shows a structure in which a resin film having a two-layer structure is provided with an insulating layer not containing particles in a central portion of the thickness direction. Fig. 13 is a view showing a structure in which a resin film having a three-layer structure is provided with an insulating layer not containing particles in a central portion of the thickness direction. @ Fig. 14 is a structure in which a resin film having a four-layer structure is provided with an insulating layer not containing particles in a central portion of the thickness direction. Figure 15 shows the shape of the electrode used in the analysis. Fig. 16 shows the calculation results of the temporal change in the viscosity of the resin (1) (2) (3). Fig. 17 shows the calculation results of the particle trapping ratio when the resin (1) is used for the conductive layer and the resins (1), (2) and (3) are used for the insulating layer. Fig. 18 is a calculation result of the time change of the checkerboard interval when the resin (1) is used for the conductive layer and the resin is used for the insulating layer -40-201013710 (1) (2) (3). Fig. 19 shows the calculation results of the temporal changes in the viscosity of the resins (1) (4) (6) (7) and (8). Figure 20 is a calculation result of the particle capture ratio when the resin (1) is used for the conductive layer and the resin (1) (4) (6) (7) (8) is used for the insulating layer. Fig. 21 is for the resin (1) (计算) The calculation result of the relationship between the heat reaction rate and the resin φ speed. Fig. 22 shows the calculation results of the particle trapping ratio when the resin (1) is used for the conductor and the resin (9) (10) (11) (12) (13) is used for the insulating layer. Fig. 23 shows a structure in which a resin film having a three-layer structure is provided with an intermediate layer sandwiched between the uppermost insulating layer and the lowermost conductive layer, and an insulating layer not containing particles having low thermal conductivity is provided. Fig. 24 is a view showing the (electrode pitch) / (electrode height φ degree) of each electrode shape as the horizontal axis, (the complement ratio of the first layer setting) / (the complement ratio of the second layer setting) as the vertical axis Results map. [Description of main component symbols] 1 : Conductive particles 2 · Resin material 3 : Semiconductor integrated circuit (1C) 4 : Upper electrode 5 : Substrate - 41 - 201013710 6 : Lower electrode 7 : Center point in the thickness direction of the resin film The surface 8 of the composition: the insulating layer of the uppermost insulating layer and the lowermost conductive layer

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Claims (1)

201013710 七、申請專利範圍 1. 一種內含導電性粒子之樹脂膜片,其係將內含導電性粒 子之樹脂膜層或絕緣性之樹脂膜層於厚度方向上層合2層以上之 內含導電性粒子的樹脂膜片,其特徵係 將內部含有由上述樹脂膜片之兩表面等距離位置之厚 度方向之中心面的樹脂膜層或鄰接上述厚度方向之中心面 的至少一個樹脂膜層爲藉由上述絕緣性之樹脂膜層所形成 參者。 2 .如申請專利範圍第1項之內含導電性粒子之樹脂 膜片,其中上述內含導電性粒子之樹脂膜層之厚度方向的 厚度,設定成比上述導電性粒子之粒徑更大,且比上述導 電性粒子之粒徑的1 .1倍更小。 3. 如申請專利範圍第1項之內含導電性粒子之樹脂 膜片,其中上述內含導電性粒子之樹脂膜層之厚度方向的 厚度,設定成比上述導電性粒子之粒徑更大,且比上述導 φ 電性粒子之粒徑的1.5倍更小。 4. 如申請專利範圍第1項之內含導電性粒子之樹脂 膜片,其中上述內含導電性粒子之樹脂膜層之厚度方向的 厚度,設定成比上述導電性粒子之粒徑更大,且比上述導 電性粒子之粒徑的2倍更小。 5 ·如申請專利範圍第1項之內含導電性粒子之樹脂 膜片,其中上述內含導電性粒子之樹脂膜層之厚度方向的 厚度,設定成比上述未內含導電性粒子之樹脂膜層之厚度 方向的厚度更小1.5倍。 -43- 201013710 6. 如申請專利範圍第1項之內含導電性粒子之樹脂 膜片,其中上述內含導電性粒子之樹脂膜層之厚度方向的 厚度,設定成比上述未內含導電性粒子之樹脂膜層之厚度 方向的厚度更小2.5倍。 7. 如申請專利範圍第1項之內含導電性粒子之樹脂 膜片,其中上述內含導電性粒子之樹脂膜層之厚度方向的 厚度,設定成比上述未內含導電性粒子之樹脂膜層之厚度 方向的厚度更小3.5倍。 8. —種內含導電性粒子之樹脂膜片,其係將內含導 電性粒子之樹脂膜層或絕緣性之樹脂膜層於厚度方向上層 合3層以上,其特徵係 將內部含有由上述樹脂膜片之兩表面等距離位置之厚 度方向之中心面的樹脂膜層、或鄰接上述厚度方向之中心 面的至少一個樹脂膜層,以上述絕緣性之樹脂膜層所形成 , 於上述樹脂膜片之兩表面鄰接之厚度方向的最上方與 最下方之兩端中的樹脂膜層兩者,以內含導電性粒子之樹 脂膜層所形成。 9. 如申請專利範圍第8項之內含導電性粒子之樹脂 膜片,其中上述內含導電性粒子之樹脂膜層之厚度方向的 厚度,設定成上述最上方與最下方之兩端中的樹脂膜層兩 者,均比上述導電性粒子之粒徑更大,且,比上述導電性 粒子之粒徑的1.1倍更小。 10. 如申請專利範圍第8項之內含導電性粒子之樹脂 201013710 膜片,其中,上述內含導電性粒子之樹脂膜層之厚度方向 的厚度,設定成比上述導電性粒子之粒徑更大,且,比上 述導電性粒子之粒徑的1.5倍更小。 1 1 .如申請專利範圍第8項之內含導電性粒子之樹脂 膜片,其中上述內含導電性粒子之樹脂膜層之厚度方向的 厚度,設定成比上述導電性粒子之粒徑更大,且,比上述 導電性粒子之粒徑的2倍更小。 12. 如申請專利範圍第8項之內含導電性粒子之樹脂 膜片,其中上述內含導電性粒子之樹脂膜層之厚度方向的 厚度,設定成比上述未內含導電性粒子之樹脂膜層之厚度 方向的厚度更小1 . 5倍。 13. 如申請專利範圍第8項之內含導電性粒子之樹脂 膜片,其中上述內含導電性粒子之樹脂膜層之厚度方向的 厚度,設定爲比上述未內含導電性粒子之樹脂膜層之厚度 方向的厚度更小2.5倍。 14. 如申請專利範圍第8項之內含導電性粒子之樹脂 膜片,其中上述內含導電性粒子之樹脂膜層之厚度方向的 厚度,設定爲比上述未內含導電性.粒子之樹脂膜層之厚度 方向的厚度更小3.5倍。 15. —種以內含導電性粒子之樹脂膜片進行電連接之 電子零件,其爲以內含導電性粒子之樹脂膜層或絕緣性之 樹脂膜層於厚度方向上層合2層以上之內含導電性粒子的 樹脂膜片進行電連接的電子零件,其特徵爲 於連接成形之前階段中,將內部含有由上述樹脂膜片 -45- 201013710 之兩表面等距離位置之厚度方向之中心面的樹脂膜層、或 鄰接上述厚度方向之中心面的至少一面樹脂膜層,係以上 述絕緣性之樹脂膜層所形成之內含導電性粒子的樹脂膜片 ,配置於電子零件之電極間,且使上述樹脂膜層之樹脂加 熱流動,將上述電極間壓縮而縮短上述電極間之間隔進行 連接成形,藉此以內含導電性粒子之樹脂膜片進行電連接 〇 16. 如申請專利範圍第15項之以內含導電性粒子之 樹脂膜片進行電連接之電子零件,其中上述內含導電性粒 子之樹脂膜片之上述內含導電性粒子之樹脂膜層之厚度方 向的厚度,設定爲比上述導電性粒子之粒徑更大,且,比 上述導電性粒子之粒徑的1.1倍更小。 17. 如申請專利範圍第15項之以內含導電性粒子之 樹脂膜片進行電連接之電子零件,其中於電子零件之將連 接之1對電極高度之和視爲H1、電極寬度之平均値視爲 W1、電極間距視爲W2、粒徑視爲H2之情形中, 於((W2-W1) X ( H1+H2 ) 3 ) / ( W1 xH23 )之値爲 9〇以上之情形中, 於連接之2個電極中之電極高度高之電極側之厚度方 向的最外層,設置內含粒子的膜層以進行連接成形。 1 8 ·如申請專利範圍第1 5項之以內含導電性粒子之 樹脂膜片進行電連接之電子零件,其中於(電極間距W2 )/(電極高度H1 )之値爲0.7以上之情形中,於連接之 2個電極中之電極高度高之電極側之厚度方向的最外層, -46- 201013710 設置內含粒子之膜層以進行連接成形。 19.如申請專利範圍第15項之以內含導電性粒子之 樹脂膜片進行電連接之電子零件,其中於電子零件之將連 接之1對電極高度之和視爲H1、電極寬度之平均値視爲 W1、電極間距視爲W2之情形中, 電極間設置之樹脂膜材料全體的厚度爲 「(( W2-W1 ) /W2 ) χΗ1+粒徑」以下。 φ 20.如申請專利範圍第15項之以內含導電性粒子之 樹脂膜片進行電連接之電子零件,其中於電子零件之將連 接之1對電極高度之和視爲H1、電極寬度之平均値視爲 W 1、電極間距視爲W2之情形中, 電極間設置之樹脂膜材料全體的厚度爲 「((W2-W1) /W2) χΗ1+粒徑 x0_25」以下。 2 1 .如申請專利範圍第1 5項之以內含導電性粒子之 樹脂膜片進行電連接之電子零件,其中於電子零件之將連 接之1對電極高度之和視爲Η1、電極寬度之平均値視爲 W1、電極間距視爲W2之情形中, 電極間設置之樹脂膜材料全體的厚度爲 「((W2-W1) /W2) χΗ1+粒徑χ0·5」以下。 22.如申請專利範圍第15項之以內含導電性粒子之 樹脂膜片進行電連接之電子零件,其中於電子零件之將連 接之1對電極高度之和視爲Η1、電極寬度之平均値視爲 W1、電極間距視爲W2之情形中, 電極間設置之樹脂膜材料全體的厚度爲 -47 - 201013710 「(( W2-W1) /W2) χΗ1+粒徑 χ0·75」以下。 23. —種內含導電性粒子之樹脂膜片,其係於內含導 電性粒子之樹脂膜層或絕緣性之樹脂膜層,於厚度方向上 層合2層以上之內含導電性粒子的樹脂膜片,其特徵係 絕緣性之樹脂膜層的黏度爲比內含導電性粒子之樹脂 膜層的黏度更低。 24. 如申請專利範圍第23項之內含導電性粒子之樹 脂膜片,其中絕緣性之樹脂膜層的黏度被設定成比內含導 電性粒子之樹脂膜層的黏度更低0.5倍以下。 25. —種內含導電性粒子之樹脂膜片,其係於內含導 電性粒子之樹脂膜層或絕緣性之樹脂膜層,於厚度方向上 層合2層以上之內含導電性粒子的樹脂膜片,其特徵係 內含導電性粒子之樹脂膜層以差示掃描熱量計所測定 之發熱反應速度的最大値,比絕緣性之樹脂膜層位於更低 溫側。 2 6. —種內含導電性粒子之樹脂膜片,其係於內含導 電性粒子之樹脂膜層或絕緣性之樹脂膜層,於厚度方向上 層合2層以上之內含導電性粒子的樹脂膜片,其特徵係 絕緣性之樹脂膜層的熱傳導率爲比內含導電性粒子之 樹脂膜層的熱傳導率更低。 27. 如申請專利範圍第26項之內含導電性粒子之樹 脂膜片,其中絕緣性之樹脂膜層的熱傳導率被設定成比內 含導電性粒子之樹脂膜層的熱傳導率更低0.7倍以下。 28. —種內含導電性粒子之樹脂膜片,其係於內含導 -48- 201013710 電性粒子之樹脂膜層或絕緣性之樹脂膜層,於厚度方向上 層合3層以上之內含導電性粒子的樹脂膜片,其特徵係 於形成上述樹脂膜片之最外層表面之厚度方向的最上 方設置絕緣性之樹脂膜層,且於最下方設置內含導電性粒 子的樹脂膜層,上述最上方絕緣性之樹脂膜層與最下層之 內含導電性粒子之樹脂膜層夾住設置之絕緣性樹脂膜層的 熱傳導率,比上述最上方絕緣性之樹脂膜層與最下層之內 φ 含導電性粒子之樹脂膜層的熱傳導率更低。 29. 如申請專利範圍第23項之內含導電性粒子之樹 脂膜片,其中絕緣性之樹脂膜層的熱傳導率爲比內含導電 性粒子之樹脂膜層的熱傳導率更低。 30. 如申請專利範圍第23項之內含導電性粒子之樹 脂膜片,其中內含導電性粒子之樹脂膜層以差示掃描熱量 計所測定之發熱反應速度的最大値,比絕緣性之樹脂膜層 位於更低溫側。 φ 31.如申請專利範圍第23項之內含導電性粒子之樹 脂膜片,其中絕緣性之樹脂膜層的熱傳導率爲比內含導電 性粒子之樹脂膜層的熱傳導率更低,內含導電性粒子之樹 脂膜層以差示掃描熱量計所測定之發熱反應速度的最大値 ,比絕緣性之樹脂膜層位於更低溫側。 32.如申請專利範圍第1項之內含導電性粒子之樹脂 膜片,其中絕緣性之樹脂膜層的黏度爲比內含導電性粒子 之樹脂膜層的黏度更低。 3 3 .如申請專利範圍第8項之內含導電性粒子之樹脂 -49- 201013710 膜片’其中絕緣性之樹脂膜層的黏度爲比內含導電性粒子 之樹脂膜層的黏度更低。 34. 如申請專利範圍第1項之內含導電性粒子之樹脂 膜片,其中絕緣性之樹脂膜層的熱傳導率爲比內含導電性 粒子之樹脂膜層的熱傳導率更低。 35. 如申請專利範圍第8項之內含導電性粒子之樹脂 膜片,其中絕緣性之樹脂膜層的熱傳導率爲比內含導電性 粒子之樹脂膜層的熱傳導率更低。 3 6.—種電子零件,其特徵爲將如申請專利範圍第23 至35項中任一項之內含導電性粒子的樹脂膜片,配置於 電子零件之電極間進行連接成形以將上述電極間予以電連 接。 -50-201013710 VII. Patent application scope 1. A resin film containing conductive particles, which comprises a conductive resin film layer containing an electroconductive particle or an insulating resin film layer laminated in two or more layers in the thickness direction. The resin film of the particles is characterized in that a resin film layer having a center surface in the thickness direction of the equidistant position of both surfaces of the resin film or at least one resin film layer adjacent to the center surface in the thickness direction is contained therein. The insulator is formed of the above-mentioned insulating resin film layer. 2. The resin film containing conductive particles in the first aspect of the patent application, wherein the thickness of the resin film layer containing the conductive particles in the thickness direction is set to be larger than the particle diameter of the conductive particles. Further, it is smaller than 1.1 times the particle diameter of the above conductive particles. 3. The resin film containing conductive particles in the first aspect of the patent application, wherein the thickness of the resin film layer containing the conductive particles in the thickness direction is set to be larger than the particle diameter of the conductive particles. And it is smaller than 1.5 times the particle diameter of the above-mentioned φ electrically conductive particles. 4. The resin film containing conductive particles in the first aspect of the patent application, wherein the thickness of the resin film layer containing the conductive particles in the thickness direction is set to be larger than the particle diameter of the conductive particles. Further, it is smaller than twice the particle diameter of the above conductive particles. 5. The resin film containing conductive particles in the first aspect of the patent application, wherein the thickness of the resin film layer containing the conductive particles in the thickness direction is set to be larger than the resin film not containing the conductive particles The thickness in the thickness direction of the layer is 1.5 times smaller. -43-201013710 6. The resin film containing conductive particles in the first aspect of the patent application, wherein the thickness of the resin film layer containing the conductive particles in the thickness direction is set to be higher than the above-mentioned non-inclusive conductivity The thickness of the resin film layer of the particles in the thickness direction is 2.5 times smaller. 7. The resin film containing conductive particles in the first aspect of the patent application, wherein the thickness of the resin film layer containing the conductive particles in the thickness direction is set to be larger than the resin film not containing the conductive particles. The thickness in the thickness direction of the layer is 3.5 times smaller. 8. A resin film containing a conductive particle in which a resin film layer containing an electroconductive particle or an insulating resin film layer is laminated in three or more layers in the thickness direction, and the feature is internally contained a resin film layer on the center surface in the thickness direction of the equidistant position of both surfaces of the resin film or at least one resin film layer adjacent to the center surface in the thickness direction is formed of the insulating resin film layer on the resin film Both of the resin film layers in the uppermost and lowermost ends in the thickness direction adjacent to both surfaces of the sheet are formed of a resin film layer containing conductive particles. 9. The resin film containing conductive particles in the eighth aspect of the patent application, wherein the thickness of the resin film layer containing the conductive particles in the thickness direction is set to be at the uppermost and lowermost ends Both of the resin film layers are larger than the particle diameter of the above-mentioned conductive particles, and are smaller than 1.1 times the particle diameter of the above-mentioned conductive particles. 10. The resin 201013710 film containing conductive particles in the eighth aspect of the patent application, wherein the thickness of the resin film layer containing the conductive particles in the thickness direction is set to be larger than the particle diameter of the conductive particles. It is larger and smaller than 1.5 times the particle diameter of the above-mentioned conductive particles. The resin film containing conductive particles in the eighth aspect of the patent application, wherein the thickness of the resin film layer containing the conductive particles in the thickness direction is set to be larger than the particle diameter of the conductive particles. Moreover, it is smaller than twice the particle diameter of the above-mentioned conductive particles. 12. The resin film containing conductive particles in the eighth aspect of the patent application, wherein the thickness of the resin film layer containing the conductive particles in the thickness direction is set to be larger than the resin film not containing the conductive particles The thickness of the layer in the thickness direction is 1.5 times smaller. 13. The resin film containing conductive particles in the eighth aspect of the patent application, wherein the thickness of the resin film layer containing the conductive particles in the thickness direction is set to be larger than the resin film not containing the conductive particles The thickness of the layer in the thickness direction is 2.5 times smaller. 14. The resin film containing conductive particles in the eighth aspect of the patent application, wherein the thickness of the resin film layer containing the conductive particles in the thickness direction is set to be larger than the resin containing no conductivity or particles. The thickness of the film layer in the thickness direction is 3.5 times smaller. 15. An electronic component in which a resin film containing conductive particles is electrically connected, and a resin film layer containing an electroconductive particle or an insulating resin film layer is laminated in two or more layers in the thickness direction. An electronic component in which a resin film containing conductive particles is electrically connected is characterized in that, in a stage before joining and forming, a center surface of a thickness direction equidistant from a surface of the resin film-45-201013710 is contained inside. The resin film layer or at least one resin film layer adjacent to the center surface in the thickness direction is disposed between the electrodes of the electronic component by the resin film containing the conductive particles formed of the insulating resin film layer. The resin of the resin film layer is heated and flowed, and the electrodes are compressed to shorten the interval between the electrodes to form a connection, thereby electrically connecting the resin film containing the conductive particles. 16 An electronic component in which a resin film containing conductive particles is electrically connected, wherein the above-mentioned resin film containing conductive particles is the above Thickness direction of the resin film layer containing the conductive particles, the particle diameter is set to be larger than that of the conductive particles, and smaller than 1.1 times the above-described particle diameter of the conductive particles. 17. An electronic component in which a resin film containing conductive particles is electrically connected as in the fifteenth aspect of the patent application, wherein the sum of the heights of the pair of electrodes to be connected to the electronic component is regarded as the average of the width of the electrode and the width of the electrode. In the case where the electrode spacing is W2 and the particle diameter is regarded as H2, in the case where ((W2-W1) X ( H1+H2 ) 3 ) / ( W1 xH23 ) is 9〇 or more, Among the two electrodes to be connected, the outermost layer in the thickness direction of the electrode side having a high electrode height is provided with a film layer containing particles to perform connection molding. 1 8 . The electronic component in which the resin film containing the conductive particles is electrically connected as in the fifteenth aspect of the patent application, in the case where the (electrode pitch W2 ) / (electrode height H1 ) is 0.7 or more The outermost layer in the thickness direction of the electrode side having the high electrode height among the two electrodes connected, -46-201013710, the film layer containing the particles is provided for connection molding. 19. An electronic component in which a resin film containing conductive particles is electrically connected as in claim 15 of the patent application, wherein a sum of heights of a pair of electrodes to be connected to the electronic component is regarded as an average of H1 and electrode widths. In the case where W1 and the electrode pitch are regarded as W2, the thickness of the entire resin film material provided between the electrodes is "((W2-W1) / W2) χΗ1 + particle diameter" or less. Φ 20. The electronic component in which the resin film containing the conductive particles is electrically connected as in the fifteenth item of the patent application, wherein the sum of the heights of the pair of electrodes to be connected to the electronic component is regarded as H1, the average of the electrode widths In the case where W is regarded as W1 and the electrode pitch is regarded as W2, the thickness of the entire resin film material provided between the electrodes is "((W2-W1) / W2) χΗ1 + particle diameter x0_25" or less). 2 1. An electronic component in which a resin film containing conductive particles is electrically connected as in the fifteenth aspect of the patent application, wherein the sum of the heights of the pair of electrodes to be connected to the electronic component is regarded as Η1, and the electrode width is In the case where the average 値 is regarded as W1 and the electrode pitch is regarded as W2, the thickness of the entire resin film material provided between the electrodes is "((W2-W1) / W2) χΗ1 + particle diameter χ0·5" or less). 22. The electronic component in which the resin film containing the conductive particles is electrically connected as in the fifteenth aspect of the patent application, wherein the sum of the heights of the pair of electrodes to be connected to the electronic component is regarded as Η1, and the average of the electrode widths. In the case where W1 and the electrode pitch are regarded as W2, the thickness of the entire resin film material provided between the electrodes is -47 - 201013710 "((W2-W1) /W2) χΗ1 + particle diameter χ0·75" or less. A resin film containing conductive particles in a resin film layer containing an electroconductive particle or an insulating resin film layer, and laminating two or more layers of resin containing conductive particles in the thickness direction The film is characterized in that the viscosity of the insulating resin film layer is lower than that of the resin film layer containing the conductive particles. 24. The resin film containing conductive particles in the 23rd aspect of the patent application, wherein the viscosity of the insulating resin film layer is set to be 0.5 times or less lower than the viscosity of the resin film layer containing the conductive particles. 25. A resin film containing conductive particles in a resin film layer containing an electroconductive particle or an insulating resin film layer, and laminating two or more layers of a resin containing conductive particles in a thickness direction The film is characterized in that the resin film layer containing the conductive particles has a maximum heat generation reaction rate measured by a differential scanning calorimeter, and is located on the lower temperature side than the insulating resin film layer. 2 6. A resin film containing conductive particles, which is a resin film layer containing an electroconductive particle or an insulating resin film layer, and laminates two or more layers of conductive particles in a thickness direction. The resin film is characterized in that the thermal conductivity of the insulating resin film layer is lower than the thermal conductivity of the resin film layer containing the conductive particles. 27. The resin film containing conductive particles in the scope of claim 26, wherein the thermal conductivity of the insulating resin film layer is set to be 0.7 times lower than the thermal conductivity of the resin film layer containing the conductive particles. the following. 28. A resin film containing conductive particles, which is a resin film layer containing an electric particle of -48-201013710 or an insulating resin film layer, and is laminated in three or more layers in the thickness direction. The resin film of the conductive particles is characterized in that an insulating resin film layer is provided on the uppermost surface in the thickness direction of the outermost surface of the resin film, and a resin film layer containing conductive particles is provided at the bottom. The thermal conductivity of the insulating resin film layer provided between the uppermost insulating resin film layer and the resin film layer containing the conductive particles in the lowermost layer is higher than the uppermost insulating resin film layer and the lowermost layer. φ The resin film layer containing conductive particles has a lower thermal conductivity. 29. A resin film comprising conductive particles in claim 23, wherein the insulating resin film layer has a thermal conductivity lower than a thermal conductivity of the resin film layer containing the conductive particles. 30. A resin film containing conductive particles in claim 23, wherein the resin film layer containing the conductive particles has a maximum heat generation reaction rate measured by a differential scanning calorimeter, and is more insulating than the insulating film. The resin film layer is located on the lower temperature side. Φ 31. The resin film containing conductive particles in the 23rd aspect of the patent application, wherein the insulating resin film layer has a thermal conductivity lower than that of the resin film layer containing the conductive particles, and contains The resin film layer of the conductive particles has a maximum heat generation reaction rate measured by a differential scanning calorimeter, and is located on the lower temperature side than the insulating resin film layer. 32. A resin film comprising conductive particles in the first aspect of the patent application, wherein the insulating resin film layer has a viscosity lower than that of the resin film layer containing the conductive particles. 3 3. Resin containing conductive particles in the eighth aspect of the patent application -49- 201013710 Membrane The viscosity of the insulating resin film layer is lower than that of the resin film layer containing the conductive particles. 34. A resin film comprising conductive particles in the first aspect of the patent application, wherein the insulating resin film layer has a thermal conductivity lower than a thermal conductivity of the resin film layer containing the conductive particles. 35. A resin film comprising conductive particles in the eighth aspect of the patent application, wherein the insulating resin film layer has a thermal conductivity lower than a thermal conductivity of the resin film layer containing the conductive particles. 3. 6. An electronic component characterized in that a resin film containing conductive particles as set forth in any one of claims 23 to 35 is disposed between electrodes of an electronic component to be joined to form the electrode Electrically connected. -50-
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JP4661985B2 (en) 2011-03-30
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JP2011233529A (en) 2011-11-17
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JP4661986B2 (en) 2011-03-30
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KR20100002196A (en) 2010-01-06
JP2010278013A (en) 2010-12-09
CN101615446B (en) 2013-07-17
KR101120277B1 (en) 2012-03-07
TW201215504A (en) 2012-04-16
CN102298988B (en) 2016-09-07
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