TW201203625A - Optoelectronic component and manufacturing method thereof - Google Patents

Optoelectronic component and manufacturing method thereof Download PDF

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Publication number
TW201203625A
TW201203625A TW100114426A TW100114426A TW201203625A TW 201203625 A TW201203625 A TW 201203625A TW 100114426 A TW100114426 A TW 100114426A TW 100114426 A TW100114426 A TW 100114426A TW 201203625 A TW201203625 A TW 201203625A
Authority
TW
Taiwan
Prior art keywords
radiation
conversion element
semiconductor wafer
optoelectronic component
radiation conversion
Prior art date
Application number
TW100114426A
Other languages
English (en)
Chinese (zh)
Inventor
Herbert Brunner
Hans-Christoph Gallmeier
Simon Jerebic
Stephan Preuss
Hansjoerg Schoell
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW201203625A publication Critical patent/TW201203625A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations

Landscapes

  • Led Device Packages (AREA)
TW100114426A 2010-04-30 2011-04-26 Optoelectronic component and manufacturing method thereof TW201203625A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102010028407.6A DE102010028407B4 (de) 2010-04-30 2010-04-30 Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements

Publications (1)

Publication Number Publication Date
TW201203625A true TW201203625A (en) 2012-01-16

Family

ID=44221169

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100114426A TW201203625A (en) 2010-04-30 2011-04-26 Optoelectronic component and manufacturing method thereof

Country Status (8)

Country Link
US (1) US9293671B2 (enExample)
EP (1) EP2532034B1 (enExample)
JP (1) JP5705304B2 (enExample)
KR (1) KR101862818B1 (enExample)
CN (1) CN102859729B (enExample)
DE (1) DE102010028407B4 (enExample)
TW (1) TW201203625A (enExample)
WO (1) WO2011134777A1 (enExample)

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TWI677114B (zh) * 2015-10-05 2019-11-11 行家光電股份有限公司 具導角反射結構的發光裝置
EP3200248B1 (en) 2016-01-28 2020-09-30 Maven Optronics Co., Ltd. Light emitting device with asymmetrical radiation pattern and manufacturing method of the same
CN107039572B (zh) * 2016-02-03 2019-05-10 行家光电股份有限公司 具非对称性光形的发光装置及其制造方法
KR102486308B1 (ko) 2016-06-10 2023-01-10 삼성전자주식회사 디스플레이 모듈 및 이에 대한 코팅방법
CN107845717A (zh) * 2016-09-21 2018-03-27 深圳市兆驰节能照明股份有限公司 Csp光源及其制造方法和制造模具
WO2018108734A1 (en) * 2016-12-15 2018-06-21 Lumileds Holding B.V. Led module with high near field contrast ratio
CN110050353B (zh) * 2016-12-15 2022-09-20 亮锐控股有限公司 具有高近场对比率的led模块
DE102017104851A1 (de) 2017-03-08 2018-09-13 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von zumindest einem optoelektronischen Bauelement und optoelektronisches Bauelement
US10224358B2 (en) * 2017-05-09 2019-03-05 Lumileds Llc Light emitting device with reflective sidewall
CN111279496A (zh) * 2017-08-04 2020-06-12 欧司朗光电半导体有限公司 用于制造光电子半导体器件的方法
JP6432654B2 (ja) * 2017-08-16 2018-12-05 日亜化学工業株式会社 半導体発光装置
CN110797330B (zh) * 2018-08-03 2024-12-06 海迪科（南通）光电科技有限公司 大角度出光光源、面光源模组及出光光源的制备方法
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Also Published As

Publication number Publication date
US20130113010A1 (en) 2013-05-09
CN102859729A (zh) 2013-01-02
JP2013526047A (ja) 2013-06-20
DE102010028407A1 (de) 2011-11-03
DE102010028407B4 (de) 2021-01-14
WO2011134777A1 (de) 2011-11-03
KR101862818B1 (ko) 2018-05-30
EP2532034B1 (de) 2021-06-09
EP2532034A1 (de) 2012-12-12
KR20130058708A (ko) 2013-06-04
CN102859729B (zh) 2016-01-13
JP5705304B2 (ja) 2015-04-22
US9293671B2 (en) 2016-03-22

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