JP2009141322A - 改良された熱循環耐性を有するled光源 - Google Patents
改良された熱循環耐性を有するled光源 Download PDFInfo
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- JP2009141322A JP2009141322A JP2008217643A JP2008217643A JP2009141322A JP 2009141322 A JP2009141322 A JP 2009141322A JP 2008217643 A JP2008217643 A JP 2008217643A JP 2008217643 A JP2008217643 A JP 2008217643A JP 2009141322 A JP2009141322 A JP 2009141322A
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- 238000005382 thermal cycling Methods 0.000 title description 3
- 239000000463 material Substances 0.000 claims abstract description 65
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- 238000000034 method Methods 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
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- 210000003000 inclusion body Anatomy 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 4
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- 230000003287 optical effect Effects 0.000 description 2
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- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
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- 229910010413 TiO 2 Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
【解決手段】光源は、基板、ダイ、およびカップを含む。基板は、その上に複数の電気トレースを有し、ダイは、トレースのうちの2つに対して接続されるLEDを含む。カップは、基板上に位置するとともに、封入体材料で満たされる。ダイはカップ内に位置されるとともに、基板および封入体材料によって封入される。カップおよび封入体材料はほぼ同じ熱膨張係数を有する。カップは、ダイから出る光を反射するように位置される反射性の側壁を含むことができる。カップ、封入体、および基板は、同じ材料から構成することができる。
【選択図】図1
Description
Claims (17)
- その上に複数の電気トレースを有する基板と、
LEDを備え、前記LEDが前記トレースのうちの2つに対して接続されるダイと、
前記基板上に位置し、封入体材料で満たされるカップであって、前記ダイが前記カップ内に位置されると共に前記基板および前記封入体材料によって封入される、カップと
を備え、
前記カップおよび封入体材料がベース材料を備え、前記ベース材料が前記カップおよび前記封入体材料の両方において同じである、
光源。 - 前記カップは、前記ダイから出る光を反射するように位置される反射性の側壁を備える、請求項1に記載の光源。
- 前記基板が本体内に封入されるリードフレームを備える、請求項1に記載の光源。
- 前記カップが前記本体内に凹部を備える、請求項3に記載の光源。
- 前記本体が前記封入体材料とほぼ同じ熱膨張係数を有する、請求項3に記載の光源。
- 前記封入体材料がエポキシを含む、請求項1に記載の光源。
- 前記封入体材料がシリコンを含む、請求項1に記載の光源。
- 前記基板が柔軟な材料を含む、請求項1に記載の光源。
- 前記基板は、前記ベース材料を有する層を備える、請求項1に記載の光源。
- 光源を形成するための方法であって、
その上に複数の電気トレースを有する基板を設けるステップと、
LEDを備えるダイを前記基板に対して取り付け、前記LEDが前記トレースのうちの2つに対して接続される、ステップと、
前記基板上に位置するカップを設けるステップと、
前記カップを封入体材料で満たし、前記ダイが前記カップ内に位置されると共に前記基板および前記封入体材料によって封入されるステップであって、前記カップおよび封入体材料がベース材料を備え、前記ベース材料が前記封入体材料および前記カップの両方において同じである、ステップと
を含む方法。 - 前記カップは、前記ダイから出る光を反射するように位置される反射性の側壁を備える、請求項10に記載の方法。
- 前記カップは、前記基板に対して取り付けられる材料の層の中に孔を備える、請求項10に記載の方法。
- 前記ダイは、前記材料の層が前記基板に対して取り付けられた後に前記基板に対して取り付けられる、請求項12に記載の方法。
- 前記封入体材料がエポキシを含む、請求項10に記載の方法。
- 前記封入体材料がシリコンを含む、請求項10に記載の方法。
- 前記基板が柔軟な材料を含む、請求項10に記載の方法。
- 前記基板は、封入体として前記ベース材料の層を備える、請求項1に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/845,501 US7968899B2 (en) | 2007-08-27 | 2007-08-27 | LED light source having improved resistance to thermal cycling |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009141322A true JP2009141322A (ja) | 2009-06-25 |
Family
ID=40406006
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JP2008217643A Pending JP2009141322A (ja) | 2007-08-27 | 2008-08-27 | 改良された熱循環耐性を有するled光源 |
Country Status (2)
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US (1) | US7968899B2 (ja) |
JP (1) | JP2009141322A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012064405A1 (en) * | 2010-11-08 | 2012-05-18 | Bridgelux, Inc. | Led-based light source utilizing asymmetric conductors |
WO2012077242A1 (ja) | 2010-12-07 | 2012-06-14 | Dowaホールディングス株式会社 | カルコゲン化合物粉、カルコゲン化合物ペースト、カルコゲン化合物粉の製造方法、カルコゲン化合物ペーストの製造方法およびカルコゲン化合物薄膜の製造方法 |
JP2012251031A (ja) * | 2011-06-01 | 2012-12-20 | Nitto Denko Corp | リフレクタ材料および発光ダイオード装置 |
Families Citing this family (33)
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US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
US7675145B2 (en) * | 2006-03-28 | 2010-03-09 | Cree Hong Kong Limited | Apparatus, system and method for use in mounting electronic elements |
US8748915B2 (en) * | 2006-04-24 | 2014-06-10 | Cree Hong Kong Limited | Emitter package with angled or vertical LED |
US8735920B2 (en) | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
US8367945B2 (en) | 2006-08-16 | 2013-02-05 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
US9711703B2 (en) * | 2007-02-12 | 2017-07-18 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
CN101388161A (zh) * | 2007-09-14 | 2009-03-18 | 科锐香港有限公司 | Led表面安装装置和并入有此装置的led显示器 |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
US8866169B2 (en) * | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
DE102008014121A1 (de) * | 2007-12-20 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterchips und Halbleiterchip |
JP5217800B2 (ja) | 2008-09-03 | 2013-06-19 | 日亜化学工業株式会社 | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
US8791471B2 (en) * | 2008-11-07 | 2014-07-29 | Cree Hong Kong Limited | Multi-chip light emitting diode modules |
JP2010153861A (ja) * | 2008-12-15 | 2010-07-08 | Yiguang Electronic Ind Co Ltd | 発光ダイオードパッケージ構造 |
US8368112B2 (en) | 2009-01-14 | 2013-02-05 | Cree Huizhou Opto Limited | Aligned multiple emitter package |
US20110037083A1 (en) * | 2009-01-14 | 2011-02-17 | Alex Chi Keung Chan | Led package with contrasting face |
US8168998B2 (en) | 2009-06-09 | 2012-05-01 | Koninklijke Philips Electronics N.V. | LED with remote phosphor layer and reflective submount |
EP2448026A4 (en) * | 2009-06-26 | 2013-08-14 | Asahi Rubber Inc | REFLECTIVE MATERIAL OF WHITE COLOR AND PRODUCTION PROCESS |
WO2011021402A1 (ja) * | 2009-08-21 | 2011-02-24 | パナソニック株式会社 | 発光装置 |
CN102044602A (zh) * | 2009-10-23 | 2011-05-04 | 亿光电子工业股份有限公司 | 发光二极管封装结构 |
JP6157118B2 (ja) | 2010-03-23 | 2017-07-05 | 株式会社朝日ラバー | 可撓性反射基材、その製造方法及びその反射基材に用いる原材料組成物 |
DE102010021791A1 (de) * | 2010-05-27 | 2011-12-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements und eines Verbunds |
CN102347433A (zh) * | 2010-07-29 | 2012-02-08 | 展晶科技(深圳)有限公司 | 发光二极管 |
TWI400823B (zh) * | 2010-08-04 | 2013-07-01 | Advanced Optoelectronic Tech | 發光二極體封裝結構及其製造方法 |
JP2012069589A (ja) * | 2010-09-21 | 2012-04-05 | Toshiba Corp | 発光装置 |
CN102456802A (zh) * | 2010-10-19 | 2012-05-16 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
US20120314419A1 (en) * | 2011-06-08 | 2012-12-13 | Wen-Kung Sung | Heat dissipation structure of light-emitting diode |
US20130026902A1 (en) * | 2011-07-28 | 2013-01-31 | Chao-Chuan Chen | Led package for increasing illumination and spotlighting |
DE102011084885A1 (de) * | 2011-10-20 | 2013-04-25 | Osram Gmbh | Auflage für eine Leuchtvorrichtung |
US10096742B2 (en) | 2012-03-28 | 2018-10-09 | Sensor Electronic Technology, Inc. | Light emitting device substrate with inclined sidewalls |
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US10622522B2 (en) | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
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WO2012064405A1 (en) * | 2010-11-08 | 2012-05-18 | Bridgelux, Inc. | Led-based light source utilizing asymmetric conductors |
WO2012077242A1 (ja) | 2010-12-07 | 2012-06-14 | Dowaホールディングス株式会社 | カルコゲン化合物粉、カルコゲン化合物ペースト、カルコゲン化合物粉の製造方法、カルコゲン化合物ペーストの製造方法およびカルコゲン化合物薄膜の製造方法 |
JP2012251031A (ja) * | 2011-06-01 | 2012-12-20 | Nitto Denko Corp | リフレクタ材料および発光ダイオード装置 |
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US7968899B2 (en) | 2011-06-28 |
US20090057708A1 (en) | 2009-03-05 |
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