TW201201342A - Semiconductor device and method for manufacturing the same - Google Patents

Semiconductor device and method for manufacturing the same Download PDF

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Publication number
TW201201342A
TW201201342A TW100111590A TW100111590A TW201201342A TW 201201342 A TW201201342 A TW 201201342A TW 100111590 A TW100111590 A TW 100111590A TW 100111590 A TW100111590 A TW 100111590A TW 201201342 A TW201201342 A TW 201201342A
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TW
Taiwan
Prior art keywords
electrode
hole
layer
semiconductor substrate
resin
Prior art date
Application number
TW100111590A
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English (en)
Chinese (zh)
Inventor
Hideyuki Wada
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Fujikura Ltd
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Application filed by Fujikura Ltd filed Critical Fujikura Ltd
Publication of TW201201342A publication Critical patent/TW201201342A/zh

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    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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TWI587470B (zh) * 2012-07-04 2017-06-11 精工愛普生股份有限公司 基板、基板之製造方法、半導體裝置及電子機器
TWI645553B (zh) * 2015-10-10 2018-12-21 蘇州晶方半導體科技股份有限公司 影像傳感晶片的封裝方法以及封裝結構
TWI698989B (zh) * 2015-10-10 2020-07-11 大陸商蘇州晶方半導體科技股份有限公司 影像傳感晶片的封裝方法以及封裝結構
US11329092B2 (en) 2017-10-02 2022-05-10 Sony Semiconductor Solutions Corporation Semiconductor device, manufacturing method of semiconductor device, and electronic equipment

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EP2584598B1 (en) * 2011-10-20 2018-12-05 ams AG Method of producing a semiconductor device comprising a through-substrate via and a capping layer and corresponding semiconductor device
JP6263859B2 (ja) * 2013-04-18 2018-01-24 大日本印刷株式会社 貫通電極基板の製造方法、貫通電極基板、および半導体装置
TWI633640B (zh) * 2013-12-16 2018-08-21 新力股份有限公司 Semiconductor element, method of manufacturing semiconductor element, and electronic device
US9613843B2 (en) * 2014-10-13 2017-04-04 General Electric Company Power overlay structure having wirebonds and method of manufacturing same
US10157792B2 (en) * 2016-10-27 2018-12-18 Nxp Usa, Inc. Through substrate via (TSV) and method therefor
JP7340965B2 (ja) * 2019-06-13 2023-09-08 キヤノン株式会社 半導体装置およびその製造方法
JP7354885B2 (ja) * 2020-03-12 2023-10-03 富士通株式会社 半導体装置及び半導体装置の製造方法

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JP2002270714A (ja) * 2001-03-12 2002-09-20 Sumitomo Metal Electronics Devices Inc プラスチックパッケージの製造方法
JP2009277883A (ja) * 2008-05-14 2009-11-26 Sharp Corp 電子素子ウェハモジュールおよびその製造方法、電子素子モジュール、電子情報機器
JP2010040862A (ja) * 2008-08-06 2010-02-18 Fujikura Ltd 半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI587470B (zh) * 2012-07-04 2017-06-11 精工愛普生股份有限公司 基板、基板之製造方法、半導體裝置及電子機器
TWI645553B (zh) * 2015-10-10 2018-12-21 蘇州晶方半導體科技股份有限公司 影像傳感晶片的封裝方法以及封裝結構
TWI698989B (zh) * 2015-10-10 2020-07-11 大陸商蘇州晶方半導體科技股份有限公司 影像傳感晶片的封裝方法以及封裝結構
US11329092B2 (en) 2017-10-02 2022-05-10 Sony Semiconductor Solutions Corporation Semiconductor device, manufacturing method of semiconductor device, and electronic equipment

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