TW201138139A - Process for production of semiconductor light-emitting element substrate - Google Patents
Process for production of semiconductor light-emitting element substrate Download PDFInfo
- Publication number
- TW201138139A TW201138139A TW099115220A TW99115220A TW201138139A TW 201138139 A TW201138139 A TW 201138139A TW 099115220 A TW099115220 A TW 099115220A TW 99115220 A TW99115220 A TW 99115220A TW 201138139 A TW201138139 A TW 201138139A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- cooling
- layer
- semiconductor light
- vacuum chamber
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 459
- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 238000001816 cooling Methods 0.000 claims abstract description 218
- 238000010438 heat treatment Methods 0.000 claims abstract description 51
- 230000005855 radiation Effects 0.000 claims abstract description 5
- 150000002500 ions Chemical class 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 48
- 238000001704 evaporation Methods 0.000 claims description 41
- 230000008020 evaporation Effects 0.000 claims description 36
- 238000004140 cleaning Methods 0.000 claims description 25
- 238000007740 vapor deposition Methods 0.000 claims description 21
- 238000010025 steaming Methods 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 32
- 238000000151 deposition Methods 0.000 abstract description 8
- 239000003989 dielectric material Substances 0.000 abstract description 6
- 230000002829 reductive effect Effects 0.000 abstract description 5
- 238000005406 washing Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 71
- 239000003245 coal Substances 0.000 description 52
- 239000007789 gas Substances 0.000 description 21
- 238000010884 ion-beam technique Methods 0.000 description 14
- 229910052594 sapphire Inorganic materials 0.000 description 14
- 239000010980 sapphire Substances 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 9
- 238000012546 transfer Methods 0.000 description 8
- 238000010257 thawing Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 230000003472 neutralizing effect Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000005292 vacuum distillation Methods 0.000 description 2
- 238000013022 venting Methods 0.000 description 2
- QDZOEBFLNHCSSF-PFFBOGFISA-N (2S)-2-[[(2R)-2-[[(2S)-1-[(2S)-6-amino-2-[[(2S)-1-[(2R)-2-amino-5-carbamimidamidopentanoyl]pyrrolidine-2-carbonyl]amino]hexanoyl]pyrrolidine-2-carbonyl]amino]-3-(1H-indol-3-yl)propanoyl]amino]-N-[(2R)-1-[[(2S)-1-[[(2R)-1-[[(2S)-1-[[(2S)-1-amino-4-methyl-1-oxopentan-2-yl]amino]-4-methyl-1-oxopentan-2-yl]amino]-3-(1H-indol-3-yl)-1-oxopropan-2-yl]amino]-1-oxo-3-phenylpropan-2-yl]amino]-3-(1H-indol-3-yl)-1-oxopropan-2-yl]pentanediamide Chemical compound C([C@@H](C(=O)N[C@H](CC=1C2=CC=CC=C2NC=1)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CC(C)C)C(N)=O)NC(=O)[C@@H](CC=1C2=CC=CC=C2NC=1)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@@H](CC=1C2=CC=CC=C2NC=1)NC(=O)[C@H]1N(CCC1)C(=O)[C@H](CCCCN)NC(=O)[C@H]1N(CCC1)C(=O)[C@H](N)CCCNC(N)=N)C1=CC=CC=C1 QDZOEBFLNHCSSF-PFFBOGFISA-N 0.000 description 1
- 240000006829 Ficus sundaica Species 0.000 description 1
- 102100021749 LIM and senescent cell antigen-like-containing domain protein 3 Human genes 0.000 description 1
- 101710104347 LIM and senescent cell antigen-like-containing domain protein 3 Proteins 0.000 description 1
- 102100024304 Protachykinin-1 Human genes 0.000 description 1
- 101800003906 Substance P Proteins 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
- G02B5/0858—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising a single metallic layer with one or more dielectric layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2010/057435 WO2011135667A1 (ja) | 2010-04-27 | 2010-04-27 | 半導体発光素子基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201138139A true TW201138139A (en) | 2011-11-01 |
| TWI355093B TWI355093B (ja) | 2011-12-21 |
Family
ID=44193868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099115220A TW201138139A (en) | 2010-04-27 | 2010-05-13 | Process for production of semiconductor light-emitting element substrate |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP4684372B1 (ja) |
| KR (1) | KR101087821B1 (ja) |
| CN (1) | CN102439195B (ja) |
| HK (1) | HK1168392A1 (ja) |
| TW (1) | TW201138139A (ja) |
| WO (1) | WO2011135667A1 (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140050850A1 (en) * | 2011-11-15 | 2014-02-20 | Panasonic Corporation | Vacuum apparatus, method for cooling heat source in vacuum, and thin film manufacturing method |
| WO2013099064A1 (ja) * | 2011-12-28 | 2013-07-04 | キヤノンアネルバ株式会社 | 真空処理装置 |
| US9869013B2 (en) | 2014-04-25 | 2018-01-16 | Applied Materials, Inc. | Ion assisted deposition top coat of rare-earth oxide |
| US12057297B2 (en) | 2015-10-22 | 2024-08-06 | Richard DeVito | Deposition system with integrated cooling on a rotating drum |
| WO2017070488A1 (en) * | 2015-10-22 | 2017-04-27 | Richard Devito | Deposition system with integrated cooling on a rotating drum |
| JP6524904B2 (ja) | 2015-12-22 | 2019-06-05 | 日亜化学工業株式会社 | 発光装置 |
| JP6588418B2 (ja) * | 2016-12-07 | 2019-10-09 | 株式会社神戸製鋼所 | 成膜装置およびそれを用いた成膜物の製造方法、ならびに冷却パネル |
| JP2020007587A (ja) * | 2018-07-04 | 2020-01-16 | 株式会社アルバック | 蒸着装置、および、蒸着方法 |
| JP7316877B2 (ja) * | 2019-08-19 | 2023-07-28 | 株式会社オプトラン | 真空プロセス装置および真空プロセス装置におけるプロセス対象物の冷却方法 |
| WO2021188754A1 (en) * | 2020-03-18 | 2021-09-23 | Richard Devito | Deposition system with integrated cooling on a rotating drum |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06347620A (ja) * | 1993-06-11 | 1994-12-22 | Canon Inc | レプリカミラーの製造方法および製造用型 |
| JP3787410B2 (ja) * | 1997-05-13 | 2006-06-21 | キヤノン株式会社 | 堆積膜製造方法及び光起電力素子の製造方法 |
| JPH11149005A (ja) * | 1997-11-14 | 1999-06-02 | Canon Inc | 内面反射ミラーおよびその製造方法 |
| JP4545504B2 (ja) * | 2004-07-15 | 2010-09-15 | 株式会社半導体エネルギー研究所 | 膜形成方法、発光装置の作製方法 |
| JP4780983B2 (ja) * | 2005-03-17 | 2011-09-28 | 株式会社アルバック | 有機ｅｌ素子製造方法 |
| JP4873455B2 (ja) * | 2006-03-16 | 2012-02-08 | 株式会社シンクロン | 光学薄膜形成方法および装置 |
| JP4597149B2 (ja) * | 2007-01-26 | 2010-12-15 | 株式会社シンクロン | 薄膜形成装置及び薄膜形成方法 |
| JP2009013435A (ja) * | 2007-06-29 | 2009-01-22 | Fujifilm Corp | 基板ホルダ及び真空成膜装置 |
| JP4941197B2 (ja) * | 2007-09-25 | 2012-05-30 | 三菱電機株式会社 | 半導体デバイスの成膜用ホルダ及び成膜用装置 |
| CN101197417B (zh) * | 2008-01-07 | 2010-09-15 | 普光科技（广州）有限公司 | 氮化镓基发光二极管芯片及其制作方法 |
-
2010
- 2010-04-27 KR KR1020117003108A patent/KR101087821B1/ko active IP Right Grant
- 2010-04-27 CN CN201080002384.0A patent/CN102439195B/zh active Active
- 2010-04-27 WO PCT/JP2010/057435 patent/WO2011135667A1/ja active Application Filing
- 2010-04-27 JP JP2010535564A patent/JP4684372B1/ja active Active
- 2010-05-13 TW TW099115220A patent/TW201138139A/zh unknown
-
2012
- 2012-09-17 HK HK12109087.1A patent/HK1168392A1/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN102439195A (zh) | 2012-05-02 |
| CN102439195B (zh) | 2014-09-03 |
| KR101087821B1 (ko) | 2011-11-30 |
| HK1168392A1 (en) | 2012-12-28 |
| KR20110125629A (ko) | 2011-11-21 |
| TWI355093B (ja) | 2011-12-21 |
| WO2011135667A1 (ja) | 2011-11-03 |
| JP4684372B1 (ja) | 2011-05-18 |
| JPWO2011135667A1 (ja) | 2013-07-18 |
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