TW201100977A - Proximity exposure device, its substrate temperature control method, and manufacturing method of a display panel substrate - Google Patents

Proximity exposure device, its substrate temperature control method, and manufacturing method of a display panel substrate Download PDF

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Publication number
TW201100977A
TW201100977A TW099118384A TW99118384A TW201100977A TW 201100977 A TW201100977 A TW 201100977A TW 099118384 A TW099118384 A TW 099118384A TW 99118384 A TW99118384 A TW 99118384A TW 201100977 A TW201100977 A TW 201100977A
Authority
TW
Taiwan
Prior art keywords
substrate
platform
chuck
air
proximity exposure
Prior art date
Application number
TW099118384A
Other languages
English (en)
Chinese (zh)
Inventor
Keisuke Yamanaka
Kenji Matsumoto
Katsuaki Matsuyama
Junichi Mori
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of TW201100977A publication Critical patent/TW201100977A/zh

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW099118384A 2009-06-17 2010-06-07 Proximity exposure device, its substrate temperature control method, and manufacturing method of a display panel substrate TW201100977A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009144279A JP5290063B2 (ja) 2009-06-17 2009-06-17 プロキシミティ露光装置、プロキシミティ露光装置の基板温度制御方法、及び表示用パネル基板の製造方法

Publications (1)

Publication Number Publication Date
TW201100977A true TW201100977A (en) 2011-01-01

Family

ID=43369426

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099118384A TW201100977A (en) 2009-06-17 2010-06-07 Proximity exposure device, its substrate temperature control method, and manufacturing method of a display panel substrate

Country Status (4)

Country Link
JP (1) JP5290063B2 (ko)
KR (1) KR101153605B1 (ko)
CN (1) CN101930181B (ko)
TW (1) TW201100977A (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5465701B2 (ja) * 2011-08-12 2014-04-09 株式会社上村工業 液晶ディスプレイ等の製造工程におけるガラス基盤面の急速且つ高精度調温装置
CN109901363A (zh) * 2017-12-11 2019-06-18 中国科学院光电技术研究所 负折射成像光刻方法和设备
KR102008509B1 (ko) * 2019-06-14 2019-08-07 ㈜ 엘에이티 디스플레이용 글라스 기판 온도조절시스템

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5836738U (ja) * 1981-08-31 1983-03-10 三洋電機株式会社 露光用マスク装置
JPS62122128A (ja) * 1985-11-21 1987-06-03 Nec Corp プロキシミテイ−露光装置
JPH06252028A (ja) * 1993-03-01 1994-09-09 Dainippon Screen Mfg Co Ltd 近接露光装置の不活性気体パージ機構
JPH0821911A (ja) * 1994-07-05 1996-01-23 Toppan Printing Co Ltd 露光方法
JP2000081706A (ja) * 1998-09-03 2000-03-21 Adtec Engineeng Co Ltd 露光装置
JP2006013401A (ja) * 2004-06-29 2006-01-12 Canon Inc 微細加工装置
JP2006147778A (ja) * 2004-11-18 2006-06-08 Nikon Corp 露光装置及びマイクロデバイスの製造方法
JP4781049B2 (ja) * 2005-08-30 2011-09-28 キヤノン株式会社 露光装置およびデバイス製造方法
JP4472626B2 (ja) * 2005-12-14 2010-06-02 株式会社オーク製作所 露光装置

Also Published As

Publication number Publication date
CN101930181A (zh) 2010-12-29
KR20100135662A (ko) 2010-12-27
KR101153605B1 (ko) 2012-06-11
JP5290063B2 (ja) 2013-09-18
JP2011002567A (ja) 2011-01-06
CN101930181B (zh) 2012-11-07

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