TW201022612A - Reduced-pressure drying device and reduced-pressure drying method - Google Patents

Abstract

A reduced-pressure drying device has a chamber that accommodates a substrate and has a processing space, a supporting part that supports the substrate and is arranged in the chamber, an exhaust port formed in the chamber, exhaust means to exhaust atmosphere inside the chamber from the exhaust port, and rectification means to be disposed in the chamber and to form channel of air flow that flows to one direction on the substrate by the exhaust operation of the exhaust means.

Description

201022612 'Six, invention description: 【Technical field of invention】 Pressure drying method 1 Coating 2 treatment liquid pressure [previous technique] Reference time liquid = glass 2 = material 'for the money shed mine, the light In the formation process of the resist film, the coating is dried under reduced pressure by applying light to the substrate. Will enter the sputum to decompression Figure 26 from: Figure as a = = pressure ^ ^, if not 』 又 又 又 又 又 又 又 又 又 又 。 。 。 减压 减压 减压 减压 减压 减压 减压152 carries the substrate to be processed. In the flat (four), a plurality of the vacuum drying processing unit is provided, and one substrate G is twisted, and the lower chamber 151 of the processor which is to be in the state of being light-resisted on the surface and the substrate is used. When it is placed in a gas-tight pressure, it is borrowed ====, which is a given reduction in adverse effects. The readout is released under the reading mode, and the photoresist is not guided. [Preliminary Literature] [Patent Literature] 1] Japanese Laid-Open Patent Publication No. 2000-18 No. Publication No. 201022612 SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION In the case of the invention, it is necessary to take time to reduce the pressure to a predetermined pressure. The amount of light-blocking liquid of ιϋ is increased, so that it takes a long time to dry the photoresist liquid across the entire substrate, and the problem of reducing the money rate is reduced. And the purpose of the present invention is to provide a dry-cleaning device for decompressing and drying the liquid. The method for solving the problem can be solved by the brain treatment liquid. The vacuum drying device of the present invention is applied to the coating (4) a coating film, a cavity to receive the substrate to be processed and forming a processing space; a holding portion disposed in the chamber to hold the substrate to be processed; an exhaust port formed in the chamber; an exhaust mechanism, The exhaust port exhausts the air in the chamber; and the rectifying mechanism is disposed in the chamber β, and the exhausting operation of the exhaust mechanism flows into the air flow path of the top surface of the substrate in one direction. ν is constructed such that the gas flow flowing in the direction of the top surface of the substrate during the vacuum drying process is carried out. Therefore, the treatment liquid applied to the substrate can be promoted to dry, and the substrate-treated surface can be uniformly dried in a relatively short period of time. In order to solve the above problems, according to the vacuum drying method of the present invention, the upper device is used to form a coating film by a vacuum drying treatment of the silk plate in the processing liquid to form a coating film, which is characterized by the following Step: holding the holding portion to hold the substrate to be processed; and decompressing the processing space in the chamber by the exhaust mechanism, and supplying the inert gas into the chamber by the supply mechanism. </ br> The body 201022612 ‘the second method 于 during the vacuum drying process, can be used in the chamber ί, can promote the drying of the treatment liquid applied to the substrate. In the needle 'according to the invention', a vacuum drying apparatus can be obtained and the substrate to be treated coated with the treatment liquid can be dried under reduced pressure, and the drying liquid can be dried, thereby shortening the drying time of the treatment liquid, and [Embodiment] An embodiment of the present invention will be described with reference to the drawings. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a plan view of a coating and developing treatment system including a vacuum drying apparatus according to the present invention. /, = cloth development processing system 1G is set in the clean room, off for LCD, the board is the quilt substrate, cleaning, photoresist coating, pre-baking, developing and after the optical lithography process in the LCD process Baking, etc., is adjacent to the external wire set 12 (10) line h exposure processing A development processing system 10, in the center is arranged with a horizontally long process m) i6 'in its long side direction (X Both sides of the direction are equipped with a box station (c / S) 14 and an interface station (ι / p) a.匣盒站(C/S) 14, the delivery box of the system box c, including: g box platform 2Q' can be up to 4 multi-segment stacks of multiple substrates G to accommodate the substrate and benefit from C The boxes are arranged in one direction of the horizontal direction (γ direction); and the transport mechanism 22 is configured to allow the substrate G to enter and exit the platform 20. The transport mechanism 22 has a mechanism for holding the substrate G, and the transport arm ^ can be X, Y. The Z and Θ4 axes operate to transfer the substrate G to the adjacent processing station (p/s) 16 side. In the processing station (P/S) 16, each processing unit is arranged in the order of the processing flow or the process, and the pair of lines A and 延伸 which are parallel to each other in the direction of the long side of the horizontal direction (χ direction).

That is, in the process A from the side of the E-box station (C/s) 14 toward the interface station G/F) 18, the transport path 34 is fed from the upstream side along the first horizontal direction (IN 201022612 8, The coating processing unit 3. In more detail, the feeding unit (IN PASS) 24 is inserted into the first water washing processing unit 26 from the box station, and the first water is fixed from the upstream side. The molecular UV irradiation unit (E-uv) 36 40 and the middle portion are provided with an attachment unit (10) drying unit from the upstream side. The present invention is the first level of the second side of the decompression drying device. From the end of the transfer of moving material s (PASS) 52 horizontal = downstream processing line of the road by f accounted for (1/) 18 side toward the E box station (C / S) 14 side unit (DEV) 54, after And Jie-up t moves the development path into a column along the second horizontal moving conveyor 64. And k-saponin (OUT-PASS) 62 in this order (COL)

Flat moving conveyor 64 one by one: virtual;!: 1〇UT should be) 62...water/S) Μ 输送 _2 f 收 处理 处理 处理 处理 处理 处理 处理 毕 毕 毕 交 交 交 交 交 交 交 交 交 交 交 交 交 交 交 交 交 交 交 交 交 交 交 交 交 交 交 交The driving mechanism enables the user to have an auxiliary conveying space Μ, and has a conveying device 72 with a conveying device 72 for the horizontally carrying the substrate G of the substrate G in the unillustrated line direction (X direction). The first and the flat moving conveyors 34, 64 or the adjacent exposure device 12 transmits p 72 1\ ιϋ 74 to rotate the substrate 〇 in the horizontal plane, and is used to convert the rectangle when the substrate is transferred to the ΐ 76f. The direction of the substrate G. Peripheral f, word=TI Cong) or ―^ e 神^ 2 shows that in the coating development processing system, for the whole process of one substrate G, the 'transport mechanism 22' in the box station (C/S) 14 From platform 2〇

(P)S^16^ The substrate G is taken out, and the taken-out substrate G is sent to the feeding unit (mpASS = moving = 1^) 24 on the processing line a side of the processing station =) 16 to shift the substrate G In the loading or heart washing treatment unit 26, the ultraviolet cleaning process is first performed by the excimer irradiation unit (Em channel, t cleaning unit (SCR) 38), and the first water "transmission 4 S2 Si" is sequentially introduced. The cleaning process (the step of Figure 2 is to use the rushing domain, the most important thing is to find the paste j, the yuan (10)) 38 one of the series of care, = that is, the horizontal transport path 34 is moved horizontally to pass the ith heat The treatment unit 28 is straight. The sinus heat treatment unit 28 β 'first adheres to the attachment unit (AD) 1 2 3 4 . The substrate G is adhered by steaming and HMDS to hydrophobize the treated surface (Fig. 2, 7 1 H beam) After the adhesion process, the substrate temperature of the base 2 is rotated in the cooling unit 5 (arc) 42 (step S5 of FIG. 2). Thereafter, the transport path 34 is moved along the first level, and the substrate G is fed. In the coating treatment unit 3, in the coating treatment unit 30, the non-spin coating method in the photoresist coating unit (c〇T) 44 first moves the substrate g to the top 5 of the panel in a horizontal manner ( Processed surface) Cloth liquid 'Saki immediately next to the next off the dry single 201022612 two (6: 46 joints by means of decompression at room temperature drying treatment (Figure 2 step from the coating processing unit 30 out of the substrate 〗Water treatment = in the middle of this; ^ baked to make the residual E base; ^ G on $ ί, ρ ϊ ^ ΐ ^ ΐΓ〇 ^ cold part of the substrate G to the mosquito temperature (_ 2 t! (PASS) - «ίο ;;:: the transport station 72 of the surface station (I/F) 18. In the 9 〇 18, the substrate G is received by the rotating platform 74, for example, the peripheral exposure device (EE) of the human peripheral device 76, 'When the exposure of the photoresist attached to the peripheral portion of the substrate g is removed, the exposure device 12 is reached to the partitioning device 12 (step S9 of Fig. 2). The photoresist in the substrate G is exposed to a predetermined circuit in the V-light device 12. The substrate G of the ϋ pattern exposure is returned to the interface station (I; F) from the exposure device 12, and then sent to the printing exposure machine (TITLER) of the peripheral device 76, where the predetermined information is recorded on the substrate. The portion (step S1G of Fig. 2). Then, the substrate G is fed from the transport device 72 to the second horizontal moving transport path which is laid on the processing line B side of the processing station (P//S) 16 In this manner, the substrate G is transported on the second horizontal moving transport path 64 toward the downstream side of the line B. In the developing unit (DEV) 54, first moved in the horizontal direction. During the conveyance period, the substrate G is subjected to development, rinsing, and drying, and the substrate G is processed (step S11 in FIG. 2), and the substrate G that has been subjected to a series of development processes in the developing unit (DEV) 54 is maintained. In the case of the second horizontal movement of the transport path 64, the third inertial processing unit 6.6 and the inspection unit (AP) are sequentially passed through. In the third age processing portion %, the substrate (4) is post-baked in the post-baking unit it (p0ST - BAKE) % for heat treatment after development processing (step S12 of Fig. 2). ‘,, 201022612 By the post-baking, the developer or cleaning solution remaining on the photoresist film on the substrate G is evaporated to remove it, and the adhesion of the photoresist pattern to the substrate is enhanced. Next, the substrate G is cooled in a cooling unit (COL) 58 to a predetermined substrate temperature (step S13 in Fig. 2). In the inspection unit (AP) 60, a non-contact line width inspection, a film quality, a film thickness inspection, and the like are performed on the photoresist pattern on the substrate (step S14 in Fig. 2). The φ delivery unit (OUTPASS) 62 receives the substrate G from the second horizontal movement path 64 and the entire process of the gentleman beam processing, and transmits it to the wheel transport mechanism 22 of the cassette station (c/s) 14. On the side of the cassette station (C/S) 14, the transport mechanism 22 stores the processed substrate G received from the delivery unit (〇υτ PASS) 62 in any one (usually in the original cassette C) (Fig. 2 Step S15). The coating and developing treatment 10 towel's vacuum drying wire of the present invention can be applied to the vacuum drying unit (vD) 46 in the coating processing unit 30. Next, 'according to Fig. 3 to Fig. 6, In the first embodiment of the vacuum drying apparatus (VD) 40 of the vacuum drying apparatus of the present invention, the entire configuration of the coating processing unit 3G is shown in Fig. 4, and Fig. 4 is a drying unit of the coating unit. Fig. 6 is a cross-sectional view taken along line CC of Fig. 5. ❹ As shown in Fig. 3 and Fig. 4, in the coating processing unit 3, in the ^ = ^ into: column, a pair of guide rails are laid on both sides of the support table 8G. The photoresist coating unit (COT) 44 includes a nozzle 84 as described above, and the nozzle 84 is fixed from 0. The nozzle 84 is self-shielded by the transport arm 82 and the vacuum drying unit (10) 46 is as shown in FIG. 4 and FIG. First 1 and liquid R. The top surface forms an open shallow bottom container type lower chamber phantom; 盥 can be airtightly attached to the lower chamber to cover the top surface Upper chamber 86 201022612 The lower chamber 85 of the strong car 5 has a substantially quadrangular shape, and a plate holding portion is disposed at the center portion to horizontally carry and adsorb the holding substrate G. The upper chamber slave 11 upper chamber to the moving mechanism 87 is arbitrarily raised and lowered When the vacuum drying process is performed on the platform, the upper chamber 86 is lowered, and the lower chamber is placed in a state in which the substrate G carried on the stage 88 is accommodated in the processing space. The bottom surface of the substrate G held by the platform 88 is provided with an exhaust port 89 at two bottoms, and a vacuum pump 91 (exhaust mechanism) for connecting the exhaust ports 89. Further, it can be in the lower chamber 85. When the SiH is coated, the processing space in the chamber is reduced by the true line 91 to the bottom surface of the lower chamber 85, and the gas is supplied to the chamber to supply an inert gas. In the purge chamber, the gas supply pipe 96 connected to the gas supply port 92 is connected to the non-tongue rolling body supply unit 97 (gas supply mechanism). The pressure in the chamber reaches a predetermined value (for example, 4' or less). ), or start self-employed after starting the established daily sales from the room. The supply port 92 supplies an inert gas. The chamber _flow for reducing the flow rate of the reduced pressure, (4) the vacuum drying treatment, and the inert gas is maintained at a constant pressure during the vacuum drying process. Before, or can be the same as, and as shown in FIG. 5, a rectifying plate 93 (first rectifying member) is provided around the bottom surface of the lower chamber 85 and the platform 88 and 89, and the door is in a double view. ^ This integral 93 forms a side opening portion 93a, and a communication path 93b from the side portion = port 89, that is, when the air in the chamber is below the flow plate a), the self-rectifying plate 93 The side opening (the base is exhausted from the exhaust port 89). 4 passage 93b, and as shown in Fig. 5, the rectifying plate 93 is provided with its side opening portion 9 body supply port 92 (with the direction of the flat (four) lion in the opposite direction. Therefore, the supply port 92 is not supplied. The active gas may be exhausted from the exhaust port 89 after flowing and passing in the direction of the rolling stock carried on the platform 88. The earth reverse G is above the upper portion of the tunnel, and is in the chamber, on the left and right sides of the connecting passage 93b, adjacent to the The rectifying plate 93 is respectively provided with a module member 95 (second rectifying member;) to fill the space below the substrate G held on the platform 。. And the inner wall of the left and right sides in the lower # cavity to 85, adjacent to the module member 95, respectively A side bar member 94 having a substantially strip shape is provided, and the side bar members 94 in the lower chamber 85 are respectively provided with side bar members 98 in the left and right sides of the upper chamber 86. The equal-side rod members 94, 98 (eighth rectifying members) close the upper chamber % and the lower chamber 85, and can fill the space of the substrate G, and limit the gas flow path to the exhaust port 89 in the processing space in the chamber. It can only pass over the substrate G. ο The coating treatment part 30 of the structure t, once the base is The board G is fed in and carried by the ί gate, and moved under 83. At this time, the photoresist R free gate 2: toward the substrate underneath it, the heart is moved from the substrate to the other side, and the substrate is traversed. 0 When the photoresist is completely coated (coated under the vacuum dry material element (VD) 46, the chamber 86 is covered by the upper chamber 86. 1 Bu G _ pressure drying unit (νιί46 The platform 88* is loaded, because it is self-covered. ί The mechanism 87 moves down the upper chamber% and is surrounded by the processing space. The internal chamber 86 and the lower chamber 85 are densely formed to form a state. To a predetermined vacuum drying method, the method is to perform vacuum reduction and dust reduction (for example, the following) on the photoresist liquid which is formed on the substrate G or to convert the gas to the active gas supply portion 97 from the gas supply port 97 from the supply port 92. Under the circumstances, the village is fine, the age, even before the start of the reduction port, or the flow from the gas supply to the gas flow for 201022612. Therefore, the gas supply "supply inactive milk flow Double to the limit, through the top surface of the substrate; ^ mouth portion 93a through the communication path 93b, and the exhaust port 89 exhaust U reverse 93 side willow substrate drying i:: period = drying speed of the photoresist R on the top surface of the J board, can be shorter into the decompression It dry treatment - once the end, the upper chamber 86 That is, ίίίΓ. Ascending movement, self-reducing Wei-drying unit (VD) 46 downwards - "process delivery ^, according to the vacuum drying device S according to the present invention, the flow continues to the entire direction of the top surface of the substrate G - In the vacuum drying operation, the evaporating material from the G-coated substrate can be efficiently exhausted, and the drying speed of the photoresist R can be increased. In the case of the gas two structure 97, the present invention is not limited thereto. In Figs. 5 and 6, the gas supply port % and the gas supply mechanism 97 may have a sufficient effect of 89. That is, even if the gas is not supplied, but only by the exhaust treatment by the exhaust port, the gas in the chamber does not flow under the substrate G (and 2 and all pass through the substrate in one direction, and flow to the exhaust) Therefore, f, in the case of the nail, Kotie recorded the drying speed of the light shouting R, which can be dried under reduced pressure for a shorter period of time. a. According to FIG. 7 to FIG. The second embodiment of the drying unit (VD) 46 is applicable to the vacuum drying apparatus. In the second embodiment, the parts common to the first embodiment and/or the X embodiment are denoted by the same reference numerals, and the detailed description thereof is omitted. 12 201022612 S says two provinces iii: and the embodiment of the gas supply control and the first embodiment are shown in the figure 8; the top view of the medium and the reduced pressure drying unit (VD) 46, the figure ΐ, Fig. 9 7 DD arrow cross-sectional view. The same Ϊ; drying unit (VD) 46 and the first embodiment of the shallow bottom container type lower chamber 85, the top surface is formed with an opening; and the top-shaped upper chamber 86, It can be airtightly sealed to the chamber of the lower chamber 85, and the chamber is not threatened. The side rod members 94, 98 (eighth rectifying members) may also have a chamber shape, that is, a chamber inner wall as shown in FIGS. 7 and 8 (in the figure, the inner chamber of the upper chamber 86, 86 positions) When the near substrate g has two shapes and the space on the side of the substrate G is large, it is preferable to use the side members 94 and 98 shown in Fig. 5. Further, the center portion of the lower chamber i 85 is configured with the same platform as the first embodiment. 88 (holding portion) is provided as a rectifying mechanism with a module member 1〇2 (third rectifying member) 俾 surrounding the platform 88. By providing the module member 1〇2, there is a small circumference below the "_.X, _ butterfly For example, the position of the thin chamber 85 may be formed, but the module member 1〇2 may be formed, and the substrate holding position m may be accommodated in the lower chamber 85 (in the lower chamber %), and the module member 102 may be lower than the lower portion. The chamber 85 is formed integrally or may be a separate member. In the first embodiment, the exhaust port 89 is provided below the substrate G. However, in the second embodiment, 'there are plural numbers as shown ( In the figure, three exhaust ports 1〇1 are arranged on the side of the substrate G. The plurality of exhaust ports 1〇1 and the gas supply port 92 sandwich the substrate G. The state is set lower than the position below the substrate G. With this configuration, the module member 102 serves as a bank for preventing airflow from flowing into the substrate. That is, as shown in Fig. 8, the inert gas supplied from the gas supply port 92 is not present. The lower side (and the side) of the substrate G flows, and all pass through the upper side of the substrate in the direction of the substrate, and flow to the exhaust port 101 on the side of the substrate. 13 201022612 Therefore, according to the second embodiment, the gas may be above the substrate. During the period of vacuum drying and wood treatment, the flow rate of the entire surface of the substrate G is continuously flowed, and the result is a drying rate of the photoresist R which is disposed on the top surface of the substrate, and can be performed in a shorter time. Drying under reduced pressure. In the second embodiment, the gas supply port 92 and the gas supply mechanism 97 are included. However, the present invention is not limited thereto, and the gas supply port is included in FIG. 7 and FIG. The configuration of the gas supply mechanism 97 can also sufficiently obtain the effects of the present invention. That is, even if the gas is not supplied, the gas in the chamber can be reduced to the lower side (and the side) of the substrate G only by the venting of the exhaust port, and the king passes through the substrate in one direction and flows to Exhaust port 1〇1. Therefore, in this case, the drying speed of the photoresist applied to the substrate is increased, and the drying under reduced pressure can be performed in a shorter period of time. Μ, ίί^康图1〇, Fig. 11, illustrating that the vacuum drying apparatus of the present invention can be applied to the third embodiment of the air pressure dry premature (VD) 46. Further, in the third embodiment, the second embodiment, the fourth part (four), the same symbol, is slightly described. Fig. 10 is a plan view showing a reduced-pressure drying unit (VD) 46 in the third embodiment, and Fig. 11 is a cross-sectional view taken along line C-C of Fig. 10. In the third embodiment, the pressure-reducing fresh-keeping element (VD) 46 is formed in the gas supply port 9 shown in the second embodiment, and is disposed in the chamber. The rectifying mechanism is shaped like _~. As a rectifying mechanism 'not shown in the second embodiment, the module member ==1, and includes a member 104 (fourth rectifying member) that is formed with a plurality of (three in the figure) exhaust ports m. The substrate G is provided on the module member 1〇3 (fourth rectifying member) on the opposite side of the module structure. ^ In detail, as shown, the exhaust port 1〇1 is formed in the module member 1〇4, and is held near the edge of the substrate G. And one side of the exhaust port is formed to be empty (4) the module member 1G4 is filled, and the space below the edge portion of the substrate side of the ship substrate G exhaust port 3 is filled with the shape of the module 1Q3 14 201022612 state. Further, the module members 103, 104 may be integrally formed with the lower chamber 85, and may be individual members. &amp; - By this configuration, as shown in Fig. 11, the gas in the chamber does not flow under the substrate G (and the side), and all passes through the substrate in one direction and flows to the exhaust port 1〇1. Therefore, according to the third embodiment, the gas can be continuously flowed over the substrate, and the flow rate of the top surface of the substrate G is continuously increased during the treatment period, and as a result, the light applied to the top surface of the substrate can be improved. The drying speed of the liquid barrier R is dried under reduced pressure for a short period of time. In the third embodiment, the fourth rectifying member is divided into the block members 103 and 104' and the space is formed below the platform 88. However, the module member may be formed as a module member. 1〇3, 1〇4 (not shown), to fill the space below 88. In the third embodiment, the example shown in Figs. 10 and 11 does not include

97 (A) 1 is attached to the substrate G, and the gas supply port 92 is provided on the side of the substrate on the opposite side of the exhaust port (the vicinity of the outer side of the module member 1A in Fig. u). The gas supply port 92 and the inert gas supply unit Μ gas supply unit 〉 the 'portion member 1G5 (fifth rectifying member) is formed in the module member 1G5 (fifth rectifying member) to form the exhaust thin π + and !I: the body supply port 92' is disposed. These are on the side of the substrate (near the edge of the substrate). (4) The chess f is interposed. Further, although FIG. 12 shows an example in which the fifth rectifying member is used to fill the space below the stage 88, at least the space below the edge portion of the exhaust port substrate is filled, and the edge of the substrate is supplied to the gas supply σ 92 side. Below, for example, the exhaust port 101 and the gas supply port 92 may also form a non-four member (fifth rectifying member) to form a space below the platform 88. According to Fig. 13 and Fig. 14, the vacuum drying apparatus of the present invention can be applied to the fourth embodiment of the fish 7 (VD) 46. In the fourth embodiment, the portions common to the three embodiments are denoted by the same reference numerals, and the top view of the reduced-pressure drying unit (VD) 46 in the fourth embodiment of the PM4 diagram is shown in FIG. CC arrow view. 15 201022612 In the fourth embodiment, the reduced-pressure drying unit (VD) 46 is different from the second rectifying mechanism provided in the chamber. The core m is not the module member 1〇2 shown in the second embodiment, and the module member 1〇6 (sixth rectifying member) is provided as shown in FIG. 14, and at least the exhaust port 101 is sandwiched between the substrates. G is in the space below the edge of the substrate on the opposite side, and '彳 is the rectifying mechanism. The module member 106 can be integrally formed with the lower chamber 85 or can be a separate member. With this configuration, as shown in Fig. 14, the gas supplied from the gas supply port 92 does not flow under the substrate G, but flows all over the substrate to the exhaust port 101. Therefore, the gas according to the fourth embodiment can also be continuously flowed over the substrate during the processing period, and the flow rate of the top surface of the substrate G can be continuously flowed, and the result can be improved on the top surface of the substrate. The drying of Kosaki R is carried out under reduced pressure for a short period of time. Further, in the fourth embodiment, the wire is exemplified by the _supply port % and the gas supply mechanism 97, but the present invention is not limited thereto, and the two supply ports 92 and the thin co-feeding mechanism in FIGS. 13 and 14 The composition of 97 can also fully obtain the effect of this ^. That is, even if no gas is supplied, only the gas flowing from the exhaust gas is flowing under the substrate G, and St2 flows through the upper portion of the substrate to the exhaust gas. Therefore, in this case, it is shown that the gas supply port 92 is hidden in the lower chamber portion. The example 'is not limited to this configuration in the present invention. In other words, the bottom edge of the substrate may be filled, or the gas supply port 92 may be formed in the chamber (the seventh rectifying member) of the two ports shown in FIG. 15, and the gas supply port 92 may be disposed near the substrate g. According to the fifth embodiment, the fifth embodiment is different from the first to fourth embodiments in that the platform for holding the substrate G can be raised and lowered, but The components that are the same as those in the embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted. Fig. 16 is a plan view of the reduced-pressure drying unit (VD) 46 in the fifth embodiment, and Figs. 17 to 19 are respectively shown in Fig. 16c_c The scraping surface view shows the state in which the height is different due to the lifting and lowering movement of the platform holding the substrate G. - As shown in the drawing, in the lower chamber 85 of the decompression drying unit (VD) 46, a plurality of exhaust ports 101 and 1 The gas supply port 92 is provided below the substrate G in a state in which the substrate G is interposed. When the inert gas is supplied from the gas supply port 92, a large amount of inert gas is driven on the top surface of the substrate G. And the platform 88 is arranged in the chamber as shown in FIG. In this state, the space below the substrate edge portion on the opposite side from the exhaust port 1〇1 with the substrate G interposed therebetween is filled with the module members 1〇7 and 108 (sixth rectifying member) as a rectification. mechanism.

Further, in order to facilitate the formation of the airflow on the substrate G, the lengths of the left and right sides of the substrate G are long. Or, it may be arranged to fill the left and right sides of the substrate G to form a gas flow, and the side rod members 1〇9 are formed at least here, as shown in the figure, or the end portions of the gas side rod members (especially the rows) Air port

The element is completely shielded (filled) from the left and right sides of the substrate G, and is not limited to the example shown in Fig. 16, and is close to the space facing the length of the inner wall of the chamber. 17 201022612 Mobile. The juice is placed outside the lowering mechanism and the lifting is opened by setting the lifting device 99, and the chamber 88 is moved to %&quot;^^, and the upper chamber 86 is near. In this state, you can see. The height of the top surface of the lower chamber is 85 to the height of 85. ^ By, for example, the transport arm 82, when feeding from the platform 88 into the feed-in substrate, when the chamber is closed, if the chamber is closed, the upper position is first moved to the chamber by driving the lifting device &quot; Between the two, the exhaust gas / 1G1 suctions the air in the processing space, and finally the substrate G is in a state of almost no gas flow. Dry to suppress the transfer marks and the like. Apply from ..., dry pressure to a predetermined value (for example, below 4GGPa), or self-reduction, move to the lower position in the chamber and stop. The circle is then turned on to the exhaust port 101 by driving the inert gas supply unit 9 and providing the module member 1〇7, 1〇8^ as a rectifying mechanism. Thereby, the drying speed of the photo-resistance liquid R can be increased, and the drying state can be more uniformized. According to the fifth real state, the non-reactive gas can be rotated from the 'dry=inhibited photoresist film to the uniform flow rate with respect to the top surface of the substrate G. Printing marks, etc. produce 'and can dry the photoresist film. 18 201022612 In the machine', it is shown to include the gas supply port 92 and the gas supply. That is, even if no gas is supplied, it flows only to the exhaust port 101 by the upper side of the discharge substrate. Therefore, in this i time, the drying speed of the photoresist liquid r on the top surface of the plate can be more than 8 ίί 眚 ? ? 虽 虽 虽 虽 虽 虽 虽 ? 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 2 2 2 Or, the three exhaust ports 101 (second, third, fourth, and implementation) are located below the substrate G (the layout) is not limited. The month y 1 - the number 篁 拼 且 且 且 且 且 且 且 π π π π π π π π π π π π π π π π π π π π π π π π π π π π π π π π π π . The shape of the soil door and the mouth of the j. 89 and 101 are shown in a perfect circle, but they may be other shapes such as a long hole or a square. κ 疋 ❹ If the gas supply port % is formed on the bottom surface of the processing space, but it is not subject to internal pressure. The hole located below the height of the substrate G _ 卩 _ lower 'room 85, St and the gas supply port 92 can also be non-coffee arm - respectively, the relative = Ming vacuum drying device can also be applied by " [Embodiment] ^ 'The composition of the decompression reduction ΐ embodiment according to the present invention (the first embodiment) is further explained based on the embodiment ^ The actual experiment is performed on the device, thereby verifying the effect 19 201022612 Set the structure of the decompression drying unit (decompression dry volume flow, decompression drying time and the relationship with the residual film rate. Jing _ lose chest thickness development ^ 2G is the same as the above embodiment' The chamber structure of the decompression drying unit of the U-shaped top member and the side bar member is shown in plan view, and the members of JF, Division 1, and 7F are identically matched. Figure 2. (Miscellaneous lower cavity = top view Fig. 20(b) is a basin DD today; in the 丨丨&gt;5» ® ϊ r~* S 〇 2 〇 (b) t 5 and in the comparative example 1, as shown in Fig. 21 (8), Fig. 21 (b) ) D_D 3 = Π 之 签 签 ' 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 并 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压Column 1 is the same, and the vacuum drying treatment and development portion H are introduced. At this time, the distance between the substrate and the ceiling portion of the chamber is two, which is smaller than that of the first embodiment (15 mm). As shown in the top view of Fig. 22 (8), the d_d arrow of Fig. 22 (b) does not have a δ-shaped rectifying plate, and is the same as the embodiment ,, using the structure of the carrier substrate G on the flat two. The drying unit was pressed, and the lamp was decompressed and dried under the same conditions as in Example 又. Further, in the comparative example 2, the composition of the vacuum dry material element * does not include the module member 95 and the side bar member. 94, 98. As a result of Example 1, a gas pressure of 1 〇〇 Pa in a vacuum drying state, a flow rate ΙΙΙ ι ^ ^ 上 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板The distribution of the residual film ratio on the substrate after the treatment was as shown in Fig. 23(b). As a result of Comparative Example 1, the gas pressure of the substrate was measured at a pressure of 1 〇〇p &amp; a) a cross-sectional view showing the distribution of the residual film rate on the substrate after development processing in Fig. 24(b). 20 201022612 and as As a result of Comparative Example 2, the gas pressure trace on the substrate at a pressure of llL/min at a flow rate of llL/min is shown in a perspective sectional view of FIG. 25(a), showing the residual film rate on the substrate after development processing. It is distributed in Fig. 25(b). As shown in Fig. 23(8), in the confirmed Example 1, a large amount of gas flows on the top surface of the substrate, and as shown in Fig. 23(b), the residual film rate after development is on the top of the substrate. The surface was obtained to be substantially uniform and high, and the time required for the vacuum drying treatment was as short as about 16 sec. On the other hand, as shown in Fig. 24 (a), it was confirmed that in Comparative Example 1, the flow was on the substrate.

The top surface has a low gas flow rate. I believe that this is because the pin 120 supports the substrate (3, the gap between the substrate G and the upper chamber 86 is small, and there is space under the substrate g, at the base

The flow of gas under the plate is high. Further, a large amount of airflow is formed in the space on the left and right sides of the substrate G, and as shown in Fig. 24(b), as a whole, the residual film ratio after development on the top surface of the substrate is low and non-uniform. The time required for the drying under reduced pressure was about 28 sec. And, as shown in Fig. 25(a), in Comparative Example 2, the flow rate of the gas flowing on the top surface of the substrate was increased as compared with Comparative Example 1. This is because the space above the substrate G at the gap between the substrate G and the platform 88 is wide. A large amount of airflow is formed on the left and right sides of the substrate G, and the space. I believe that, therefore, compared to the embodiment, the flow on the substrate = the amount is reduced. As shown in Fig. 25(b), compared with the comparative example, the uniformity of the distribution on the top surface of the substrate has been exceptionally improved, but it is less than the time required for the plate to be dried under reduced pressure. It is 21see, which is about 7 sec compared to the comparative example. As a result of the isolation, it has been confirmed that the drying time of the treatment liquid such as the photoresist is reduced by the vacuum drying apparatus according to the present invention, and a uniform film thickness can be obtained. The lanthanide system includes a vacuum-drying coating according to the present invention. (4) The processing system is a substrate processing movement process of the coating development processing system of FIG. 1. The top view of the processing unit is shown in FIG. Side view. 21 201022612 Figure 5 is a top view of a single mosquito that is dried according to this pressure. ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ The second embodiment of the drying apparatus is reduced. Fig. 8 is a cross-sectional view taken along line C-C of Fig. 7. Figure 9 is a cross-sectional view of the IM) arrow of Figure 7. Fig. 11 is a cross-sectional view taken along the line C-C of Fig. 10, which is the third embodiment of the drying apparatus according to the present invention. _ The third embodiment of the vacuum dry material pressure drying device embossing the first embodiment of the pressure relief drying device. Fig. 14 is a cross-sectional view taken along line c-c of Fig. 13. The embodiment of the reduction of 4 is the result of the reduction of the fifth embodiment of the private decompression work. Figure 17 is a state diagram of the C-C arrow loss and the drop of Figure 16. The field side shows the platform lift of the holding substrate. Fig. 18 is a C-C arrow view of Fig. 16, which is the upper part of the room. The platform of the substrate holding the substrate is located in the cavity. Fig. 19 is a cross-sectional view of the C-C arrow, which is a state diagram of the bottom of the substrate. Fig. 20 is a view showing the configuration of a chamber of the reduced-pressure drying unit used in Example 1. Fig. 21 is a view showing the configuration of a chamber of the reduced-pressure drying unit used in Comparative Example 1. Fig. 22 is a view showing the configuration of a chamber of the vacuum-dried material used in Comparative Example 2. Figure 23 is a graph showing the results of Example 1. Fig. 24 is a graph showing the results of Comparative Example 1. 22 201022612 Fig. 25 is a graph showing the results of Comparative Example 2. Fig. 26 is a cross-sectional view showing a schematic configuration of a conventional vacuum drying unit. [Description of main component symbols] A, B··. Processing line (line) C... 匣 box EE... Peripheral exposure device G... Processed substrate (substrate) R... Photoresist liquid S1 to S15 ...steps refer to TITLER...print exposure machine 10.. coating development processing system 12.. exposure device 14.. Interface station (I/F) 20... cassette platform (platform) 22. Transport mechanism 22a... transport arm art 24·. feed unit (INPASS) 26.. cleaning processing unit 28... first Heat treatment unit 30.. Coating treatment unit 32... Second heat treatment unit 34.. First horizontal movement conveyance path 36··, excimer UV irradiation unit (E-UV) 38.. Polishing and cleaning unit ( SCR) 40·.· Attachment unit (AD) 42, 50, 58·.·Cooling unit (COL) 44.·. photoresist coating unit (COT) 23 201022612 46.. . Decompression drying unit (VD) 48. . Pre-baking unit (PRE-BAKE) 52···Transfer unit (PASS) 54.. Developing unit (DEV) 56··. Post-baking unit (POST-BAKE) 60·.·Check unit (AP) 62.··Sending unit (OUT_PASS) 64... 2nd horizontal moving conveyor 66...3rd heat processing unit 68.. . Auxiliary transport space 70.. Shuttle device 72... Transport device 74··. Rotary platform (R/S) 76... Peripheral device 80.. Support table 81.. Guide rail (track) 82.. Transport arm 83... Gate 84.. .nozzle 85, 151·.. lower chamber (chamber) 86, 152··· upper chamber (chamber) 86a, 86b... inner wall of upper chamber 86 87.. upper chamber Chamber moving mechanism 88, 153... Holder (platform) 89, 101, 154... Exhaust port 90.. Exhaust pipe 91.. · Exhaust mechanism (vacuum pump) 92.. Gas supply port 93 ..·Rectifying plate (rectifying mechanism) 93a...side opening portion 201022612 '93b...communication path 94, 98,109...side bar member (rectifying mechanism) 95, 102 to 108...module member (rectifying mechanism) 96.. Gas supply pipe 97.. Inactive gas supply unit (gas supply mechanism) 99.. Lifting device 120... Pin 156.. Fixed pin

25

Claims (1)

201022612 VII. Patent application scope: 1. A vacuum drying device for vacuum drying treatment of a substrate to be treated with a treatment liquid to form a coating film, comprising: a τ蔑 processing chamber' Processing the substrate and forming a processing space; the holding portion is disposed in the chamber to hold the processed substrate; the exhaust port is formed in the chamber; and the exhaust mechanism is arranged to evacuate the chamber from the exhaust port And a rectifying mechanism disposed in the chamber, wherein the exhaust gas of the exhaust mechanism forms an air flow path that flows in a direction through the top surface of the substrate. 2. The vacuum drying apparatus according to claim 1, wherein the gas supply port is formed in the chamber, located on the upstream side of the gas stream formed by the exhaust machine, and The side of the substrate; and the gas supply mechanism, the reactive gas. The vacuum drying device of the first or second aspect of the invention, wherein the first rectifying member is included in the vacuum refining device of the first or second aspect of the invention. The gap between the holding portion and the surface is located around the exhaust port, and an opening portion is formed at a side portion thereof to open a communication path connecting the opening portion and the exhaust port. ' y 4. The reductive mechanism includes a first rectifying member' disposed on the left and right sides of the communication path and is adjacent to the first rectifying member and filled up. The space below the substrate to be processed held by the holding portion. 5. The vacuum drying apparatus of claim 1 or 2, wherein the drainage is formed on a side of the substrate to be processed; J, and the rectifying mechanism comprises a third rectifying member, the third rectifying member At least the space below the circumference of the substrate to be processed held by the holding portion is filled. ^ 26 201022612 6.^ Apply for patent coverage! Or 2 items comprising a fourth rectifying member armored L-shaped mechanism of the exhaust port; capturing the π-domain in the edge of the secret substrate of the (4) holding portion, the lower part of the member, at least filling the row The gap between the edge portion of the substrate on the gas port side is opposite to the gas discharge port sandwiching the substrate. (4) The edge portion of the plate is y ❿ 申 = = = = = = = = = = = = = = = = The rectifying mechanism includes a fifth rectifying member formed with an exhaust port and the gas supply port, and the weighing plate is separated from the substrate to be rectified by the holding portion held by the holding portion Below the lower part = 'Nu Lai Lin' of the edge of the substrate opposite the side of the venting opening of the substrate, the venting port is shaped to contain a sixth rectifying member, and the sixth rectifying member is at least filled ==, the substrate to be processed is located on the opposite side of the exhaust port 2, item, dry_, wherein the Wei port is formed and the rectifying mechanism includes a seventh rectification formed with the gas supply port The seventh rectifying member held by the holding portion fills at least the edge portion of the substrate on the gas supply port side The decompression drying device of any one of the third to ninth aspects of the invention, wherein the side rectifying mechanism further comprises a rectifying member disposed on the top surface of the reduction substrate The left and right sides of the substrate are at least filled or shielded from the left and right sides of the substrate. 11. The reduced-pressure drying apparatus according to claim 1 or 2, wherein the lifting mechanism includes a lifting mechanism that can move the holding portion up and down in the chamber. Π.-, a reduced-pressure drying method 'in any one of claims 2 to η', the treatment liquid coated with the treatment liquid is subjected to a minus I drying treatment to form a coating film comprising the following Step: holding the substrate to be processed on the holding portion; and supplying the inert gas to the chamber by the processing space reducing supply mechanism in the chamber by the exhaust mechanism. Apparent body 13. The vacuum drying method according to claim 12, wherein the processing space in the cavity is reduced, and the gas supply is provided in the chamber: in the step of the cavity, starting in the chamber Gas is supplied to the chamber before or at the same time as the pressure is reduced. j 14. The vacuum drying method of claim 12, wherein the processing space in the chamber is depressurized, and the step of supplying the inert gas into the chamber i by the gas supply includes the following steps: The d-work begins to decompress the processing space in the chamber; and when the chamber reaches a predetermined value, or when the chamber has been decremented by /2, the chamber has passed the predetermined time. Supply an inert gas. σ VIII, schema: 28