200839848 九、發明說明 【發明所屬之技術領域】 本發明係關於，例如於薄膜電晶體（TFT : Thin Film Transistor)等的製程中，可在對光阻進行回流處理時予以 ' 利用之回流處理裝置及回流處理方法。 【先前技術】 φ 主動矩陣型液晶顯示裝置，係於形成薄膜電晶體（TFT) 之T F T基板，與形成彩色濾光片之對向基板之間包夾液 晶並予以支撐，且可對每個像素選擇性地施加電壓而構 成。於此所使用之TFT基板製作過程中，由於重複以微 影技術進行光阻等感光性材料的圖案形成，因此於每一次 微影技術中，均需具有光阻掩膜。 然而，近年來隨者液晶顯不裝置的高積體化及精細化 的進展，其製程逐漸變得複雜，使得製造成本有增加之傾 φ 向。因此，爲了降低製造成本，係針對將用於微影技術之 掩膜圖案的形成製程予以整合而減少全體的製程數之方式 進行探討。關於減少掩膜圖案的形成製程數之技術，係有 人提出一種使有機溶劑滲入於光阻中，使光阻軟化以改變 * 光阻圖案的技術，而藉此省略掩膜圖案的形成製程之回流 製程（例如參照專利文獻1)。此外，亦有人提出一種可有 效率的進行回流製程之基板處理裝置（回流處理裝置）（例 如參照專利文獻2、專利文獻3)。 [專利文獻1]日本特開2002-3 34830號公報（申請專利 -5- 200839848 範圍等） [專利文獻2]日本特開2003-158054號公報（第1圖等） [專利文獻3]日本特開2005-15 9293號公報（第8圖等） 【發明內容】 (發明所欲解決之課題） 上述專利文獻2或專利文獻3所記載之回流處理裝 置，爲藉由搬運裝置將基板搬入至處理室內之後，將上述 處理室內置換爲溶劑環境而使光阻溶解之處理室方式，因 此，基板的搬入·搬出以及環境的置換需花費特定時間， 因而具有處理量的提升受到侷限之課題。 此外，於處理室方式時，必須藉由調節溶劑供應量及 排氣量來控制處理室內之溶劑的流動，但實際上難以進行 控制，使溶劑濃度產生濃淡不一，因而產生難以於基板面 內獲得回流量的一致性之問題。爲了解決此一致性之問 題，雖有考量到過量供應溶劑之方式，但此時亦具有溶劑 使用量增加之課題。 因此，本發明之目的在於提供一種，可於基板面內進 行一致的處理且能夠獲得充分的處理量之回流處理裝置。 (用以解決課題之手段） 爲了解決上述課題，本發明之第1觀點係提供一種回 流處理裝置，爲於溶劑環境中使基板上的光阻軟化且流動 之回流處理裝置，其特徵爲具備：以大致呈水平的姿勢支 -6- 200839848 撐基板之基板支撐構件；及可在接近前述基板支撐構件所 支撐之基板的位置上相對地移動而設置，且於基板上方的 回流處理空間形成溶劑環境之溶劑環境形成器；前述溶劑 環境形成器係具備：連接於溶劑供應源，並將溶劑供應至、 前述回流處理空間之溶劑供應口；及連接於吸引機構，並 吸引供應至前述回流處理空間的溶劑之溶劑吸入口。 於上述第1觀點之回流處理裝置中，其中於前述溶劑 環境形成器，較理想係形成有與基板對向並規定前述回流 處理空間之基板對向面。此外，前述溶劑供應口及前述溶 劑吸入口，較理想均爲形成於前述基板對向面之開□。此 時，前述溶劑供應口及前述溶劑吸入口，較理想爲分別與 前述基板的表面對向而於基板的寬度方向形成長邊之開 □。 此外，前述基板對向面與基板之間的間隔較理想爲 1〜5mm。再者，前述基板支撐構件較理想爲具備：以特定 間隔互爲平行地排列於基板搬運方向之複數個旋轉構件·, 及使前述旋轉構件旋轉之旋轉驅動機構；藉由使前述旋轉 構件在抵接於基板下面之狀態下旋轉，而使基板對前述溶 劑環境形成器進行水平移動。此時，前述旋轉構件較理想 爲於基板的寬度方向形成長邊之滾輪，更理想係於前述滾 輪內部，具備用以調節基板溫度之溫度調節機構。 此外，可於前述溶劑環境形成器，具備用以進行供應 至前述回流處理空間之溶劑的溫度調節之溫度調節機構。 再者，可配置複數個前述溶劑環境形成器，並對1片 200839848 基板依序進行回流處理。 本發明之第2觀點係提供一種回流處理方法，其特徵 爲：使用上述第1觀點之回流處理裝置，使基板上的光阻 軟化且流動。 本發明之第3觀點係提供一種回流處理裝置，爲於溶 劑環境中使基板上的光阻軟化且流動之回流處理裝置，其 特徵爲具備：以大致呈水平的姿勢支撐基板之基板支撐構 φ 件；可對前述基板支撐構件所支撐之基板相對地移動而設 置，且具有連接於溶劑供應源並將溶劑供應至基板上方之 溶劑供應口以及連接於吸引機構並吸引供應至基板上方的 溶劑之溶劑吸入口，並且於基板上方形成溶劑環境之溶劑 環境形成器；及將包含溶劑之氣體，從前述溶劑環境形成 器的溶劑供應口朝向前述基板上的光阻供應，並且從前述 溶劑吸入口予以吸引而進行控制之控制部。 φ 發明之效果 本發明之回流處理裝置係具備：以大致呈水平的姿勢 支撐基板之基板支撐構件；及可在接近前述基板支撐構件 所支撐之基板的位置上相對地移動而設置，且於基板上方 的回流處理空間形成溶劑環境之溶劑環境形成器；藉此， 可抑制回流處理空間中之溶劑濃度產生濃淡不一而使溶劑 濃度達到一致，因此可較以往之處理室方式的回流處理裝 置，更能夠達到基板面內之回流處理的一致性。 此外，由於不需進行於處理室方式的回流處理裝置中 -8- 200839848 必需進行之基板的搬入·搬出動作，或是回流處理前後之 處理室內的環境置換，且能夠一邊搬運基板一邊進行回流 處理，因此可大幅提升回流處理的處理量。 此外，溶劑環境形成器係具備：連接於溶劑供應源， 並將溶劑供應至基板上方之溶劑供應口；及連接於吸引機 構，並吸引供應至基板上方的溶劑之溶劑吸入口；藉此， 可進行能夠防止溶劑洩漏至外部並節省溶劑的使用量之回 流處理。 【實施方式】 以下係參照圖式，說明本發明之較佳的型態。 第1圖係顯示適用於本發明的回流方法之回流處理系 統的全體之槪略俯視圖。在此係以下列回流處理系統爲例 進行說明，此回流處理系統係具備：回流處理單元 (REFLW)，係用以進行將形成於LCD用玻璃基板（以下僅 標記爲「基板」）G的表面之光阻膜，於顯像處理後予以 軟化且變形，並作爲對底層膜進行蝕刻時之蝕刻掩膜而重 新使用之回流處理；重新顯像處理單元（REDEV)，係於此 回流處理之前用以進行薄膜去除處理（重新顯像處理）；以 及黏附單元（AD)，係用以進行底層膜的表面改質。 此回流處理系統1 〇〇係構成爲，可經由圖中未顯示之 基板搬運線，於外部的光阻塗佈顯像處理系統與曝光裝 置、蝕刻裝置、灰化裝置等之間進行基板G的收授。回 流處理系統100係具備··卡匣站（搬出入部）1，係載置有 -9- 200839848 用以收納複數片基板G之卡匣C ;處理站（處理部）2，係 具有用以對基板G進行包含回流處理以及於此之前所先 進行之薄膜去除處理及表面改質處理的一連串處理之複數 個處理單元；控制部3，係控制回流處理系統1 00的各構 成部。於第1圖中，以回流處理系統1 0 〇的長度方向爲X 方向，以於水平面上與X方向直交之方向爲Y方向。 卡匣站1係鄰接於處理站2之一邊的端部而配置。此 卡匣站1，係具備於卡匣C與處理站2之間用以進行基板 G的搬出入之搬運裝置11，並於此卡匣站1中進行卡匣c 對外部之搬出入。此外，搬運裝置1 1，係具有可於沿著 卡匣C的排列配置方向之Y方向所設置之搬運路徑1 〇上 自由移動之搬運臂11a。此搬運臂lla係構成爲，以可對 X方向進出·退回、往上下方向升降以及旋轉之方式地設 置，且可於卡匣C與處理站2之間進行基板G的收授。 處理站2，係具備用以對基板G進行回流處理以及作 爲前段處理之薄膜去除處理及表面改質處理等之複數個處 理單元。於各處理單元中，係一次處理1片基板G。於處 理站2中，各處理單元係於X方向配置爲2列，且能夠 以所謂的平流方式依序搬運基板G並進行處理而構成， 於其中途係設置有用以改變基板G的行進方向之迴轉單 元20。此迴轉單元2 0，係具有可於沿著Y方向所設置之 搬運路徑21上自由移動，且可對X方向進出·退回、往 上下方向升降以及旋轉之方式地設置之搬運臂2 1 a。 於處理站2的一邊側，從卡匣站1的一側依序排列配 -10- 200839848 置有重新顯像處理單元（REDEV)30及黏附單元（AD)40， 於另一邊側，排列配置有回流處理單元（REFLW)50及加 熱·冷卻處理單元（HP/COL)80。加熱·冷卻處理單元 (HP/COL)80係於垂直方向層積配置有複數段（圖式中省 略）。 重新顯像處理單元（REDEV)30，爲於回流處理之前， 對光阻的圖案進行重新顯像以去除薄膜部之薄膜去除處理 的處理單元。此重新顯像處理單元（REDEV)30係構成爲， 一邊藉由例如爲滾輪搬運或滾子搬運等手段，以一定速度 使基板G移動，一邊將用以進行重新顯像處理之處理 液，從重新顯像藥液吐出噴嘴朝向基板G吐出，而能夠 進行重新顯像藥液的塗佈處理。 黏附單元（AD)40，爲於回流處理之前，一邊藉由例如 爲滾輪搬運或滾子搬運等手段，以一定速度使基板G移 動，一邊對基板G形成包含例如以 HMDS(Hexamethyl Disilane :六甲基一石夕院）、TMSDEA(N-Trimethylsilyl Diethylamine ··三甲基矽烷基二乙胺）等的矽烷化劑爲代表 之表面改質處理劑之環境，而進行用以促進光阻的流動之 表面改質處理的處理單元。這些表面改質處理劑係具有排 水化處理作用，亦作爲排水化處理劑而爲人所知。 回流處理單元（REFLW)50，爲用以進行於溶劑環境中 使於基板G上形成圖案之光阻軟化且流動，並改變圖案 而形成新的光阻圖案之回流處理的單元。關於此回流處理 單元（REFLW)50的內部構成，係參照第2圖〜第4圖進行 -11 - 200839848 說明。 如第2圖所示，回流處理單元（REFLW) 50，係具備能 夠水平地支撐基板G而於基板G的寬度方向形成長邊之 複數個滾輪51，作爲用以搬運基板G之搬運手段。並排 配置之各滾輪51，係藉由連接於圖中未顯示之旋轉驅動 機構而設置爲可單向旋轉，且可藉由此滾輪51的旋轉而 將基板G往搬運方向（X方向）搬運。於各滾輪5 1的內部 設置有溫度調節媒體流路5 1 a，藉由讓溫度調節媒體於溫 度δ周卽媒體流路51a中流通’可g周節基板G的溫度。基板 G的搬運手段並不限於滾輪5 1，例如可利用皮帶輸送器 等來取代滾輪5 1。 中介存在於搬運滾輪5 1之間個複數處（於第2圖中爲 3處），配置有作爲溶劑環境形成器之回流處理器 53(5 3 a、53b、53c)。第3圖係顯示第1實施型態之回流 處理器5 3的槪略構成之立體圖，第4圖係顯示其縱向剖 面圖。回流處理器5 3係具備：具有溶劑供應部5 5及溶劑 吸入部5 7之頂板5 9 ;沿著基板G的搬運方向互爲對向而 設置之側板61、61 ;與上述搬運方向直交之側板6 2、 62 ;及底板63 ;於側板62、62係形成有基板導入口 64a 及基板導出口 64b，且全體形成爲橫向較長的中空角柱形 狀，並且以基板G可通過該內部之方式地形成。於頂板 5 9的下面，形成有對向於以滾輪51予以支撐之狀態的基 板G之基板對向面65。 藉由此基板對向面6 5、基板G、側板6 1、61及側板 -12· 200839848 62、62，而形成回流處理時構成溶劑環境之回流處理空間 S。基板對向面65係接近於基板G而配置，基板對向面 65與基板G之間的間隔，較理想例如爲1〜5mm，更理 想爲2〜4mm。藉由使基板對向面65接近於基板G而配置 並將回流處理空間S構成爲較小空間，可容易使回流處理 空間S內的溶劑濃度達到一致，而達到基板G面內之回 流處理的一致性，並且可節省溶劑的使用量。此外，係藉 由側板61、61以及形成有基板導入口 64a與基板導出口 64b之側板62、62而包圍回流處理空間S，藉此可防止溶 劑的拽漏。 於回流處理器5 3中，溶劑供應部5 5及溶劑吸入部 57係從頂板59往外側（斜向上方）突出而設置。溶劑供應 部55於內部具有溶劑供應路徑66，此溶劑供應路徑66 係經由複數條溶劑供應管 67而連接於溶劑供應源 68(68a、68b、68〇。溶劑供應路徑66的另一端側，係與 在基板對向面65上於基板G的寬度方向形成長邊的開口 之溶劑供應口 69連通。於此溶劑供應口 69的開口部內， 係配置有例如由多孔質陶瓷等所構成且具有細微的氣體管 路之整流構件7 1，且構成爲將包含氣化後的溶劑之氣體 朝向基板G —致地吹出。 此外，溶劑吸入部57係於內部具有排氣路徑72，此 排氣路徑72係經由排氣管73連接於吸引泵浦等之吸引機 構7 7(77a、77b、77〇。排氣路徑72的另一端側，係與在 基板對向面65上於基板G的寬度方向形成長邊的開口之 -13- 200839848 溶劑吸入口 75連通。 於以上構成的回流處理單元（REFLW)50中’係驅動 圖中未顯示之旋轉驅動機構使滾輪51旋轉’而將基板G 往X方向搬運。之後，於基板G通過中空筒狀之回流處 理器5 3的內部時，將包含溶劑之氣體’從溶劑供應部5 5 的溶劑供應口 6 9朝向基板G的表面供應。從溶劑供應口 69所吹出之包含溶劑之氣體，對基板G表面並非呈垂 直，而是以特定的傾斜角度吐出至回流處理空間S。不僅 從溶劑供應口 69供應包含溶劑之氣體’並且從溶劑吸入 部5 7的溶劑吸入口 7 5將所供應的氣體予以吸入，之後經 由排氣路徑72、排氣管73予以回收。如此，由於回流處 理器53之基板對向面65與基板G之間爲狹窄的回流處 理空間S，因此可形成從溶劑供應口 69朝向溶劑吸入口 75之單向流動。於此過程中，回流處理空間S之環境中 的溶劑被基板G表面的光阻所吸收，使光阻軟化且流 動，而形成變形光阻圖案。於本實施型態中，基板G的 行進方向係與包含溶劑之氣體的流動方向爲相同，但基板 G的行進方向與包含溶劑之氣體的流動方向亦可爲相反 (對向流）。 於本實施型態中，係於滾輪51的內部設置溫度調節 媒體流路5 1 a而對實施回流處理之基板G進行溫度調節， 但亦可於回流處理器5 3設置例如熱交換器等之溫度調節 手段’而調節包含溶劑之氣體的溫度。此外，亦可構成 爲’於回流處理器5 3設置掃描機構，一邊使用滾輪5 1搬 -14 - 200839848 運基板G，一邊對基板維持一定的間隔而於水平方向掃描 回流處理器53。 如第 2圖的例子所示，於 1個回流處理單元 (REFLW)50內，可配置複數個回流處理器 53a、53b、 53c，因此能夠對1片基板G，分爲數階段實施1次回流 處理、2次回流處理、3次回流處理…般之回流處理。此 時，於各回流處理器53a、S3b、53c中可進行同一內容之 處理，亦可針對每個回流處理器53a、53b、53c改變其處 理條件，例如溶劑的濃度、溶劑的種類、處理溫度、處理 時間等而進行回流處理。 溶劑的濃度或溶劑的種類，可藉由調整從溶劑供應源 所供應之溶劑與稀釋氣體的混合比例或溶劑的種類而調 整。 處理溫度，可藉由調節從溶劑供應口 69所供應之包 含溶劑之氣體的溫度，或於滾輪51內的溫度調節媒體流 路5 1 a中所流通之溫度調節媒體的溫度而改變。 處理時間，可藉由改變依據滾輪5 1之基板G的搬運 速度，或是回流處理器53之X方向的長度（具體而言，從 溶劑供應口 69至溶劑吸入口 75爲止之距離）而改變。例 如，於對寬度400mm、長度 500mm的基板G進行處理 時，較理想係設定回流處理器5 3之X方向的長度爲 3〇〜100mm，依據滾輪 之基板 G的搬運速度爲 2 0〜100mm/秒，基板對向面65與基板G之間的間隔例 如爲4〜5mm。此時，從溶劑供應口 69所供應之氣體的流 -15- 200839848 量（供應流量）較理想爲20〜5〇L/min，從溶劑吸入口 75所 吸入之氣體的流量（排氣流量）較理想爲20〜50L/min。藉由 適當地改變各回流處理器5 3之處理條件，例如可提升回 流處理的速度（處理量），或是控制軟化光阻所被覆之區域 等。 於加熱·冷卻處理單元（HP/COL)80中，係設置有一 邊藉由例如爲滾輪搬運或滾子搬運等手段，以一定速度使 基板G移動，且一邊對基板G進行加熱處理之加熱板單 元（HP)以及對基板G進行冷卻處理之冷卻板單元（COL)。 於此加熱.冷卻處理單元（HP/COL)80中，對於回流處理 後的基板G，可因應必要進行加熱處理或冷卻處理。 如第1圖所示，回流處理系統1 0 0的各構成部，係連 接於控制部3之具備CPU的控制器90而進行控制之構 成。於控制器90中，係連接有可讓製程管理者用以管理 回流處理系統1 〇〇而進行指令的輸入操作等之鍵盤，或是 由可顯示出回流處理系統1 00的運轉狀況而顯示器等所構 成之使用者介面91。 此外，於控制器90中係連接有記錄部92，此記錄部 92中係儲存有用以在控制器90的控制下實現回流處理系 統1 G0中所執行的各種處理之控制程式，或記錄有處理條 件資料等之製程參數。 此外，可因應必要，以來自於使用者介面91的指示 等，從記錄部92中讀出任意的製程參數並於控制器90中 執行，藉此，可在控制器90的控制下於回流處理系統 -16- 200839848 1 0 0中進行期望的處理。此外’上述製程參數，可使用儲 存於例如爲CD-ROM、硬碟、軟碟、快閃記憶體等的電腦 可讀取記憶媒體之狀態者，或是例如經由專用線路從其他 裝置隨時傳送而加以使用。 於以上構成之回流處理系統1 0 0中，首先於卡匣站1 中，搬運裝置1 1的搬運臂1 1 a係進入收納有已形成光阻 圖案之基板G之卡匣C，並取出1片基板G。基板G從搬 運裝置11的搬運臂11a被傳送至重新顯像處理單元 (REDEV)30，並藉由例如爲滾子等之搬運手段，一邊往X 方向搬運一邊進行重新顯像處理（薄膜去除處理）。實施重 新顯像處理後的基板G，係藉由例如爲滾子等之搬運手 段，被搬入至黏附單元（AD)40。之後，於黏附單元 (AD)40中進行表面改質處理後，基板G係藉由迴轉單元 2〇的搬運臂21a從黏附單元（AD)40中取出，並搬入至回 流處理單元（REFLW)50，然後再一邊往與先前所進行者爲 相反之方向搬運，一邊進行回流處理。 回流處理後的基板G，係被搬入至加熱·冷卻處理單 元（HP/COL)80。然後於加熱·冷卻處理單元（HP/COL)80 中進行加熱或冷卻處理。結束此一連串的處理之基板G， 係藉由搬運臂11a從加熱·冷卻處理單元（HP/COL)80當 中取出，並傳送至卡匣站1的搬運裝置11而收納於任意 的卡匣C。 第5圖係顯示回流處理單元（REFLW)50之第2實施 型態的槪略構成之立體圖，第6圖係顯示其縱向剖面圖。 -17- 200839848 本實施型態之回流處理器54，係於頂板59的中央部設置 溶劑供應部5 5，並且於基板〇的行進方向上，於頂板5 9 的前方側及後方側分別具備溶劑吸入部5 7 a、5 7 b，就此 點來看，係與第1實施型態之回流處理器5 3 (參照第3 圖、第4圖）有所不同。溶劑供應部5 5，係從頂板5 9的 中央部以幾乎與上方呈直交之方式地突出而設置。溶劑吸 入部57a、5 7b係從頂板59往外側（斜向上方）突出而設 g 置。溶劑供應部5 5於內部具有溶劑供應路徑6 6，此溶劑 供應路徑66係經由溶劑供應管67而連接於溶劑供應源 (圖式中省略），溶劑供應路徑66的另一端側，係與在基 板對向面65上於基板G的寬度方向形成長邊的開口之溶 劑供應口 69連通。於此溶劑供應口 69的開口部內，係配 置有例如由多孔質陶瓷等所構成且具有細微的氣體管路之 整流構件7 1，且構成爲將包含氣化後的溶劑之氣體朝向 基板G —致地吹出。 φ 此外，溶劑吸入部57a、57b係於內部具有排氣路徑 72a、72b，此排氣路徑 72a、72b係分別經由排氣管 7 3a、73b連接於吸引泵浦等之吸引機構（圖式中省略）。排 氣路徑72a、72b的另一端側，係與在基板對向面65上於 基板G的寬度方向形成長邊的開口之溶劑吸入口 75a、 75b連通。 然後驅動圖中未顯示之旋轉驅動機構使滾輪5 1旋 轉，而將基板G往X方向搬運’於基板G通過中空筒狀 之回流處理器5 4的內部時，將包含溶劑之氣體，從溶劑 •18- 200839848 供應部55的溶劑供應口 69朝向基板G的表面供應，並 且從溶劑吸入部57a、57b的溶劑吸入口 75a、75b將所供 應的氣體予以吸入，之後經由排氣路徑72a、72b、排氣 管73a、73b予以回收。如此，從溶劑供應口 69所吹出之 包含溶劑之氣體，係對基板G表面呈垂直而吐出至回流 處理空間S，且於回流處理器54之基板對向面65與基板 G之間的回流處理空間S中，形成分別朝向2個溶劑吸入 口 75a、75b之氣流。，於此過程中，回流處理空間S之 環境中的溶劑被基板G表面的光阻所吸收，使光阻軟化 且流動，而形成變形光阻圖案。第2實施型態之回流處理 器54的其他構成及作用，係與第1實施型態之回流處理 單元（REFLW)50的回流處理器53(參照第3圖、第4圖） 相同。 接著參照第7圖〜第1 1圖，說明第3實施型態之回流 處理單元（REFLW)50。於本實施型態中，作爲將包含溶劑 之環境供應至形成有光阻圖案之基板G的表面之回流處 理器，係具備回流噴嘴1 10。回流處理單元（REFLW)50， 係具備能夠水平地支撐基板G而於基板G的寬度方向形 成長邊之複數個滾輪5 1。此滾輪5 1的構成係與第1實施 型態、第2實施型態之滾輪5 1相同。 回流噴嘴1 1 〇，係藉由圖中未顯示的固定手段支撐並 固定於用以支撐基板G之滾輪51的上方，於其下面具有 對向於以滾輪5 1予以支撐之狀態的基板G之基板對向面 -19- 112° 200839848 藉由此基板對向面1 1 2及基板G，而形成回流處理時 構成溶劑環境之回流處理空間S。此基板對向面112與基 板G之間的間隔L2，較理想例如爲1〜5mm，更理想爲 2〜4mm。藉由使基板對向面112接近於基板G而配置並將 回流處理空間S構成爲較小空間，可容易使回流處理空間 S內的溶劑濃度達到一致，而達到基板G面內之回流處理 的一致，並且可節省溶劑的使用量。此外，亦可設置使回 流噴嘴110於水平方向移動之驅動機構（圖中未顯示），而 對基板G的表面平行移動。 於基板對向面1 1 2上，形成有於基板G的寬度方向 形成長邊的開口之溶劑供應口 1 1 4及溶劑吸入口 1 1 6。溶 劑供應口 1 1 4，係經由與此連通之回流噴嘴1 1 0內部的溶 劑供應路徑' 1 1 7及溶劑供應管1 1 8而連接於溶劑供應源 1 20，並將包含溶劑之氣體朝向基板G上的光阻供應。此 外，於溶劑供應口 1 1 4的開口部內，係配置有例如由多孔 質陶瓷等所構成且具有細微的氣體管路之整流構件1 22， 且構成爲將包含氣化後的溶劑之氣體朝向基板G —致地 吹出。 溶劑吸入口 1 1 6，係在基板對向面1 1 2上於基板G的 寬度方向形成長邊的開口，並經由與此連通之回流噴嘴 110內部的排氣路徑123及排氣管124，而連接於吸引泵 浦等之吸引機構126。 於以上構成的回流處理單元（REFLW)50中，係驅動[Technical Field] The present invention relates to a reflow processing apparatus which can be used in a process such as a thin film transistor (TFT) And reflux treatment method. [Prior Art] φ Active matrix type liquid crystal display device is a TFT substrate on which a thin film transistor (TFT) is formed, and a liquid crystal is sandwiched between a counter substrate on which a color filter is formed, and is supported for each pixel. It is constructed by selectively applying a voltage. In the fabrication of the TFT substrate used herein, since the patterning of the photosensitive material such as photoresist is repeated by the lithography technique, it is necessary to have a photoresist mask for each lithography technique. However, in recent years, with the progress of high integration and refinement of liquid crystal display devices, the process thereof has gradually become complicated, and the manufacturing cost has increased. Therefore, in order to reduce the manufacturing cost, the method of integrating the formation process of the mask pattern for the lithography technique and reducing the total number of processes is discussed. Regarding the technique for reducing the number of formation processes of the mask pattern, a technique of infiltrating an organic solvent into the photoresist to soften the photoresist to change the *resist pattern has been proposed, thereby omitting the reflow of the mask pattern forming process. The process (for example, refer to Patent Document 1). Further, a substrate processing apparatus (reflow processing apparatus) capable of performing a reflow process efficiently has been proposed (for example, refer to Patent Document 2 and Patent Document 3). [Patent Document 1] Japanese Patent Laid-Open No. Hei. No. 2003-158054 (Japanese Patent Application Laid-Open No. Hei No. Hei. SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION The reflow processing apparatus described in the above-mentioned Patent Document 2 or Patent Document 3 is to carry the substrate into the processing by the transport device. After the inside of the room, the processing chamber in which the processing chamber is replaced with a solvent environment and the photoresist is dissolved is required. Therefore, it takes a certain time to carry in and out of the substrate, and the replacement of the environment is required. Therefore, the improvement in the amount of processing is limited. In addition, in the processing chamber mode, it is necessary to control the flow of the solvent in the processing chamber by adjusting the solvent supply amount and the exhaust amount, but it is actually difficult to control, and the solvent concentration is uneven, so that it is difficult to be in the substrate surface. Get the consistency of the return traffic. In order to solve this problem of consistency, although the method of supplying a solvent in excess is considered, the problem of an increase in the amount of solvent used is also at this time. Accordingly, it is an object of the present invention to provide a reflow processing apparatus which can perform uniform processing in a substrate surface and which can obtain a sufficient amount of processing. In order to solve the above problems, a first aspect of the present invention provides a reflow processing apparatus, which is characterized in that: a reflow processing apparatus that softens and flows a photoresist on a substrate in a solvent environment, and is characterized in that: a substrate supporting member supporting the substrate in a substantially horizontal posture; and a substrate supporting member that is relatively movable at a position close to the substrate supported by the substrate supporting member, and forming a solvent environment in the reflow processing space above the substrate a solvent environment former; the solvent environment former includes: a solvent supply port connected to a solvent supply source and supplying the solvent to the reflow processing space; and a suction mechanism and attracting the supply to the reflow processing space Solvent solvent inlet. In the reflow processing apparatus according to the first aspect of the invention, preferably, in the solvent environment former, a substrate facing surface that faces the substrate and defines the reflow processing space is formed. Further, it is preferable that the solvent supply port and the solvent suction port are formed on the opposite surface of the substrate. In this case, it is preferable that the solvent supply port and the solvent suction port face each other so as to face the surface of the substrate and form a long side in the width direction of the substrate. Further, the interval between the opposing surface of the substrate and the substrate is preferably 1 to 5 mm. Furthermore, it is preferable that the substrate supporting member includes a plurality of rotating members that are arranged in parallel with each other at a predetermined interval in a substrate conveying direction, and a rotation driving mechanism that rotates the rotating member; Rotating in a state under the substrate causes the substrate to horizontally move the solvent environment former. In this case, the rotating member is preferably a roller having a long side in the width direction of the substrate, and more preferably inside the roller, and is provided with a temperature adjusting mechanism for adjusting the temperature of the substrate. Further, the solvent environment former may be provided with a temperature adjustment mechanism for temperature adjustment of a solvent supplied to the reflow processing space. Furthermore, a plurality of the foregoing solvent environment formers can be disposed, and one piece of the 200839848 substrate is sequentially subjected to reflow treatment. According to a second aspect of the present invention, there is provided a reflow processing method characterized in that the photoresist on a substrate is softened and flowed by using the reflow processing apparatus according to the first aspect. According to a third aspect of the present invention, there is provided a reflow processing apparatus which is a reflow processing apparatus which softens and flows a photoresist on a substrate in a solvent environment, and is characterized in that: a substrate supporting structure φ which supports the substrate in a substantially horizontal posture Providing a substrate supported by the substrate supporting member to be relatively moved, and having a solvent supply port connected to the solvent supply source and supplying the solvent to the substrate, and a solvent connected to the attraction mechanism and attracting the solvent supplied to the substrate. a solvent environment forming device that forms a solvent environment above the substrate; and supplies a gas containing the solvent from the solvent supply port of the solvent environment former to the photoresist on the substrate, and is supplied from the solvent inlet Control unit that attracts and controls. φ Effect of the Invention The reflow processing apparatus of the present invention includes: a substrate supporting member that supports the substrate in a substantially horizontal posture; and is provided to be relatively movable at a position close to the substrate supported by the substrate supporting member, and is provided on the substrate The upper reflow treatment space forms a solvent environment former for the solvent environment; thereby, the concentration of the solvent in the reflow treatment space can be suppressed to be uniform, and the solvent concentration can be made uniform, so that the reflow treatment device of the conventional process chamber can be used. It is more able to achieve the consistency of the reflow treatment in the plane of the substrate. In addition, it is not necessary to carry out the loading/unloading operation of the substrate which must be performed in the reflow processing apparatus of the processing chamber type, or the environmental replacement in the processing chamber before and after the reflow processing, and it is possible to perform the reflow processing while transporting the substrate. Therefore, the throughput of the reflow treatment can be greatly improved. Further, the solvent environment former includes: a solvent supply port connected to the solvent supply source and supplying the solvent to the upper side of the substrate; and a solvent suction port connected to the suction mechanism and sucking the solvent supplied to the upper side of the substrate; A reflow treatment is performed to prevent the solvent from leaking to the outside and saving the solvent. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a schematic plan view showing the entire reflow processing system applied to the reflow method of the present invention. Here, the following reflow processing system is provided as an example. The reflow processing system includes a reflow processing unit (REFLW) for performing a surface to be formed on a glass substrate for LCD (hereinafter, simply referred to as "substrate") G. The photoresist film is softened and deformed after the development process, and is reflowed as an etching mask for etching the underlying film; the re-development processing unit (REDEV) is used before the reflow process. For film removal treatment (re-development treatment); and adhesion unit (AD) for surface modification of the underlying film. The reflow processing system 1 is configured to perform substrate G between an external photoresist coating development processing system, an exposure device, an etching device, an ashing device, and the like via a substrate transfer line (not shown). Received. The reflow processing system 100 includes a cassette station (loading/receiving unit) 1 and a cassette C for storing a plurality of substrates G of -9-200839848; and a processing station (processing unit) 2 for pairing The substrate G performs a plurality of processing units including a reflow process and a series of processes of the film removal process and the surface modification process performed before, and the control unit 3 controls each component of the reflow process system 100. In the first drawing, the longitudinal direction of the reflow processing system 10 〇 is the X direction, and the direction orthogonal to the X direction on the horizontal plane is the Y direction. The cassette station 1 is disposed adjacent to the end of one side of the processing station 2. The cassette station 1 is provided with a transport device 11 for transporting the substrate G between the cassette C and the processing station 2, and the cassette station 1 carries out the cassette c to the outside. Further, the transport device 1 1 has a transport arm 11a that is freely movable on the transport path 1 设置 provided in the Y direction along the arrangement direction of the cassette C. The transport arm 11a is configured to be movable in and out in the X direction, up and down, and rotated in the vertical direction, and the substrate G can be received between the cassette C and the processing station 2. The processing station 2 includes a plurality of processing units for performing a reflow process on the substrate G and a film removal process and a surface modification process as the front stage process. In each processing unit, one substrate G is processed at a time. In the processing station 2, each processing unit is arranged in two rows in the X direction, and can be configured by sequentially transporting and processing the substrate G in a so-called advection manner, and is provided in the middle to change the traveling direction of the substrate G. Swing unit 20. The turning unit 20 has a transport arm 2 1 a that is freely movable on the transport path 21 provided along the Y direction, and is movable in the X direction, retracted, and moved up and down and rotated. On one side of the processing station 2, the one side of the cassette station 1 is arranged in order. -10-200839848 The re-development processing unit (REDEV) 30 and the adhesion unit (AD) 40 are disposed on the other side. There is a reflow processing unit (REFLW) 50 and a heating and cooling processing unit (HP/COL) 80. The heating/cooling processing unit (HP/COL) 80 is provided with a plurality of sections (not shown in the drawings) stacked in the vertical direction. The re-development processing unit (REDEV) 30 is a processing unit that re-images the pattern of the photoresist to remove the film removal process of the thin film portion before the reflow process. The re-development processing unit (REDEV) 30 is configured to move the substrate G at a constant speed while moving the substrate G at a constant speed by, for example, roller conveyance or roller conveyance, and to process the liquid for re-development processing. The re-developing chemical liquid discharge nozzle is discharged toward the substrate G, and the application process of the re-developing chemical liquid can be performed. The adhesion unit (AD) 40 is formed by moving the substrate G at a constant speed by, for example, roller conveyance or roller conveyance before the reflow treatment, and forms the substrate G to include, for example, HMDS (Hexamethyl Disilane: Hexa A The surface of the surface modification treatment agent represented by the decylating agent such as the base of the singularity of the singularity of the singularity of the singularity of the singularity of the sulphate The processing unit for the upgrade process. These surface modification treatment agents have a drainage treatment effect and are also known as a drainage treatment agent. The reflow processing unit (REFLW) 50 is a unit for performing a reflow process for softening and flowing a photoresist which forms a pattern on the substrate G in a solvent environment, and changing the pattern to form a new photoresist pattern. The internal configuration of this reflow processing unit (REFLW) 50 is described with reference to Figs. 2 to 4 and -11 - 200839848. As shown in Fig. 2, the reflow processing unit (REFLW) 50 is provided with a plurality of rollers 51 capable of supporting the substrate G horizontally and forming a long side in the width direction of the substrate G as a transport means for transporting the substrate G. The rollers 51 arranged side by side are unidirectionally rotatable by being connected to a rotation driving mechanism (not shown), and the substrate G can be conveyed in the conveying direction (X direction) by the rotation of the roller 51. A temperature adjustment medium flow path 51a is provided inside each of the rollers 51, and the temperature of the peripheral substrate G is distributed by the temperature adjustment medium in the temperature δ around the media flow path 51a. The conveying means of the substrate G is not limited to the roller 5 1, and for example, a belt conveyor or the like can be used instead of the roller 51. The intermediate medium is present at a plurality of places (three points in Fig. 2) between the conveyance rollers 51, and a reflow processor 53 (5 3 a, 53b, 53c) as a solvent environment former is disposed. Fig. 3 is a perspective view showing a schematic configuration of a reflow processor 53 of the first embodiment, and Fig. 4 is a longitudinal sectional view thereof. The reflow processor 53 includes a top plate 59 having a solvent supply unit 55 and a solvent suction unit 57, and side plates 61 and 61 which are disposed opposite each other along the conveyance direction of the substrate G; and are orthogonal to the conveyance direction. The side plates 6 2, 62 and the bottom plate 63 are formed with a substrate introduction port 64a and a substrate outlet port 64b, and are formed in a horizontally long hollow column shape, and the substrate G can pass through the inside. Ground formation. On the lower surface of the top plate 59, a substrate opposing surface 65 facing the substrate G supported by the roller 51 is formed. By the substrate facing surface 65, the substrate G, the side plates 61, 61, and the side plates -12, 200839848 62, 62, a reflow processing space S constituting a solvent environment during reflow processing is formed. The substrate facing surface 65 is disposed close to the substrate G, and the interval between the substrate facing surface 65 and the substrate G is preferably 1 to 5 mm, more preferably 2 to 4 mm. By arranging the substrate facing surface 65 close to the substrate G and constituting the reflow processing space S into a small space, the solvent concentration in the reflow processing space S can be easily made uniform, and the reflow processing in the surface of the substrate G can be achieved. Consistency and saves solvent usage. Further, the reflow processing space S is surrounded by the side plates 61, 61 and the side plates 62, 62 on which the substrate introduction port 64a and the substrate outlet 64b are formed, whereby leakage of the solvent can be prevented. In the reflow processor 53, the solvent supply unit 55 and the solvent suction unit 57 are provided to protrude outward (obliquely upward) from the top plate 59. The solvent supply portion 55 has a solvent supply path 66 therein, which is connected to the solvent supply source 68 (68a, 68b, 68A) via a plurality of solvent supply pipes 67. The other end side of the solvent supply path 66 is The solvent supply port 69 which is formed in the opening direction of the substrate G in the width direction of the substrate G is connected to the solvent supply port 69. The opening of the solvent supply port 69 is formed, for example, of porous ceramics or the like. The gas line rectifying member 171 is configured to blow the gas containing the vaporized solvent toward the substrate G. Further, the solvent suction portion 57 has an exhaust path 72 therein, and the exhaust path 72 is provided. It is connected to a suction mechanism 7 7 (77a, 77b, 77〇) such as a suction pump via an exhaust pipe 73. The other end side of the exhaust path 72 is formed on the substrate opposing surface 65 in the width direction of the substrate G. The long side opening is -13-200839848 The solvent suction port 75 is connected. In the above-mentioned reflow processing unit (REFLW) 50, the rotary drive mechanism (not shown in the drive diagram rotates the roller 51) and the substrate G is moved to the X direction. Then, when the substrate G passes through the inside of the hollow cylindrical reflux processor 53, the solvent-containing gas 'is supplied from the solvent supply port 619 of the solvent supply portion 5 toward the surface of the substrate G. From the solvent supply port The solvent-containing gas blown out by the solvent is not perpendicular to the surface of the substrate G, but is discharged to the reflow processing space S at a specific inclination angle. The gas containing the solvent is supplied not only from the solvent supply port 69 but also from the solvent suction portion 57. The solvent suction port 75 sucks the supplied gas, and then recovers it through the exhaust path 72 and the exhaust pipe 73. Thus, the reflow of the substrate facing surface 65 and the substrate G by the reflow processor 53 is narrow. The space S is treated, so that a unidirectional flow from the solvent supply port 69 toward the solvent suction port 75 can be formed. In this process, the solvent in the environment of the reflow processing space S is absorbed by the photoresist of the surface of the substrate G, and the photoresist is softened. And flowing, forming a deformed photoresist pattern. In the present embodiment, the traveling direction of the substrate G is the same as the flow direction of the gas containing the solvent, but the traveling direction of the substrate G The flow direction of the gas containing the solvent may be reversed (opposite flow). In the present embodiment, the temperature adjustment medium flow path 5 1 a is provided inside the roller 51 to adjust the temperature of the substrate G subjected to the reflow treatment. However, it is also possible to adjust the temperature of the gas containing the solvent by providing a temperature adjustment means such as a heat exchanger in the reflow processor 53. Alternatively, the reflow processor 53 may be provided with a scanning mechanism and a scroll wheel. 5 1 moving-14 - 200839848 The substrate G is scanned in the horizontal direction while maintaining a constant interval on the substrate. As shown in the example of Fig. 2, in one reflow processing unit (REFLW) 50, Since a plurality of reflow processors 53a, 53b, and 53c are disposed, the single substrate G can be subjected to a reflow process such as one reflow process, two reflow processes, and three reflow processes in a plurality of stages. At this time, the same content processing can be performed in each of the reflow processors 53a, S3b, and 53c, and the processing conditions such as the concentration of the solvent, the kind of the solvent, and the processing temperature can be changed for each of the reflow processors 53a, 53b, and 53c. Reflow treatment is performed by processing time and the like. The concentration of the solvent or the kind of the solvent can be adjusted by adjusting the mixing ratio of the solvent and the diluent gas supplied from the solvent supply source or the kind of the solvent. The treatment temperature can be changed by adjusting the temperature of the solvent-containing gas supplied from the solvent supply port 69 or the temperature of the temperature regulating medium circulating in the temperature regulating medium flow path 51a in the roller 51. The processing time can be changed by changing the conveying speed of the substrate G according to the roller 51 or the length of the reflow processor 53 in the X direction (specifically, the distance from the solvent supply port 69 to the solvent suction port 75). . For example, when processing the substrate G having a width of 400 mm and a length of 500 mm, it is preferable to set the length of the reflow processor 5 in the X direction to be 3 〇 to 100 mm, and the conveying speed of the substrate G according to the roller is 20 to 100 mm / Second, the interval between the substrate facing surface 65 and the substrate G is, for example, 4 to 5 mm. At this time, the flow rate of the gas supplied from the solvent supply port 69 is -15-200839848 (supply flow rate) is preferably 20 to 5 〇L/min, and the flow rate of the gas taken in from the solvent suction port 75 (exhaust flow rate) It is preferably 20 to 50 L/min. By appropriately changing the processing conditions of the respective reflow processors 53, for example, the speed (processing amount) of the reflow processing can be increased, or the area covered by the soft photoresist can be controlled. In the heating/cooling processing unit (HP/COL) 80, a heating plate that moves the substrate G at a constant speed while heating the substrate G by means of, for example, roller conveyance or roller conveyance is provided. A unit (HP) and a cooling plate unit (COL) that cools the substrate G. In the heating/cooling treatment unit (HP/COL) 80, heat treatment or cooling treatment may be performed for the substrate G after the reflow treatment. As shown in Fig. 1, each component of the reflow processing system 100 is connected to a controller 90 including a CPU of the control unit 3 to perform control. The controller 90 is connected to a keyboard for allowing the process manager to manage the reflow processing system 1 to perform command input operations, or the like, or to display the operation status of the reflow processing system 100, and the like. The user interface 91 is formed. Further, a recording unit 92 is connected to the controller 90, and the recording unit 92 stores a control program for realizing various processes executed in the reflow processing system 1G0 under the control of the controller 90, or recording processing. Process parameters such as condition data. Further, any process parameters can be read from the recording unit 92 and executed in the controller 90 by an instruction from the user interface 91 or the like as necessary, whereby the reflow processing can be performed under the control of the controller 90. The desired processing is performed in System-16-200839848 1 0 0. In addition, the above process parameters may be stored in a state of a computer readable memory such as a CD-ROM, a hard disk, a floppy disk, a flash memory, or the like, or may be transmitted from other devices at any time, for example, via a dedicated line. Use it. In the reflow processing system 100 configured as described above, first, in the cassette station 1, the transport arm 1 1 a of the transport device 1 1 enters the cassette C in which the substrate G on which the photoresist pattern has been formed is taken, and 1 is taken out. Sheet substrate G. The substrate G is transported from the transport arm 11a of the transport device 11 to the re-development processing unit (REDEV) 30, and is re-developed while being transported in the X direction by a transport means such as a roller (film removal processing). ). The substrate G subjected to the re-imaging process is carried into the adhesion unit (AD) 40 by, for example, a transfer means such as a roller. Thereafter, after the surface modification treatment is performed in the adhesion unit (AD) 40, the substrate G is taken out from the adhesion unit (AD) 40 by the transfer arm 21a of the revolving unit 2, and carried into the reflow processing unit (REFLW) 50. Then, it is reflowed while being carried in the opposite direction to the one previously performed. The substrate G after the reflow treatment is carried into a heating/cooling treatment unit (HP/COL) 80. Then, heating or cooling treatment is performed in the heating/cooling processing unit (HP/COL) 80. The substrate G that has been subjected to the series of processes is taken out from the heating/cooling processing unit (HP/COL) 80 by the transport arm 11a, and is transported to the transport device 11 of the cassette station 1 and stored in an arbitrary cassette C. Fig. 5 is a perspective view showing a schematic configuration of a second embodiment of the reflow processing unit (REFLW) 50, and Fig. 6 is a longitudinal sectional view thereof. -17- 200839848 The reflow processor 54 of the present embodiment is provided with a solvent supply portion 55 at the center portion of the top plate 59, and is provided with a solvent on the front side and the rear side of the top plate 59 in the traveling direction of the substrate 〇. The suction portions 5 7 a and 5 7 b are different from the reflow processor 5 3 (see Fig. 3 and Fig. 4) of the first embodiment. The solvent supply unit 55 is provided so as to protrude from the center portion of the top plate 590 so as to be almost perpendicular to the upper portion. The solvent suction portions 57a and 57b protrude from the top plate 59 to the outside (obliquely upward) and are disposed. The solvent supply portion 55 has a solvent supply path 6 6 therein, and the solvent supply path 66 is connected to the solvent supply source (omitted in the drawing) via the solvent supply pipe 67, and the other end side of the solvent supply path 66 is A solvent supply port 69 that forms an opening of a long side in the width direction of the substrate G on the opposite surface 65 of the substrate communicates with each other. In the opening of the solvent supply port 69, a rectifying member 173 having a fine gas line, for example, made of a porous ceramic or the like, is disposed, and the gas containing the vaporized solvent is directed toward the substrate G. Blow out the ground. Further, the solvent suction portions 57a and 57b have exhaust passages 72a and 72b therein, and the exhaust passages 72a and 72b are connected to a suction mechanism such as a suction pump via the exhaust pipes 723a and 73b, respectively. Omitted). The other end sides of the exhaust passages 72a and 72b communicate with the solvent suction ports 75a and 75b which open the long sides of the substrate G in the substrate facing surface 65. Then, the rotary drive mechanism (not shown) is driven to rotate the roller 51, and the substrate G is conveyed in the X direction. When the substrate G passes through the inside of the hollow cylindrical reflux processor 504, the solvent-containing gas is supplied from the solvent. 18-200839848 The solvent supply port 69 of the supply portion 55 is supplied toward the surface of the substrate G, and the supplied gas is sucked from the solvent suction ports 75a, 75b of the solvent suction portions 57a, 57b, and then through the exhaust paths 72a, 72b. The exhaust pipes 73a and 73b are recovered. In this manner, the solvent-containing gas blown from the solvent supply port 69 is discharged perpendicularly to the surface of the substrate G to the reflow processing space S, and is reflowed between the substrate facing surface 65 of the reflow processor 54 and the substrate G. In the space S, air flows respectively toward the two solvent suction ports 75a and 75b are formed. In this process, the solvent in the environment of the reflow processing space S is absorbed by the photoresist of the surface of the substrate G, and the photoresist is softened and flows to form a deformed photoresist pattern. The other configuration and operation of the reflow processor 54 of the second embodiment are the same as those of the reflow processor 53 (see Figs. 3 and 4) of the reflow processing unit (REFLW) 50 of the first embodiment. Next, a reflow processing unit (REFLW) 50 of the third embodiment will be described with reference to Figs. 7 to 11. In the present embodiment, a reflow nozzle 110 is provided as a reflow processor that supplies an environment containing a solvent to the surface of the substrate G on which the photoresist pattern is formed. The reflow processing unit (REFLW) 50 is provided with a plurality of rollers 5 1 capable of horizontally supporting the substrate G and growing in the width direction of the substrate G. The configuration of the roller 5 1 is the same as that of the roller 5 1 of the first embodiment and the second embodiment. The reflow nozzle 1 1 is supported by a fixing means (not shown) and fixed to the upper side of the roller 51 for supporting the substrate G, and has a substrate G on the lower side thereof in a state of being supported by the roller 51. The substrate facing surface -19-112° 200839848 forms the reflow processing space S constituting the solvent environment by the substrate facing surface 112 and the substrate G. The interval L2 between the substrate facing surface 112 and the substrate G is preferably, for example, 1 to 5 mm, more preferably 2 to 4 mm. By arranging the substrate facing surface 112 close to the substrate G and constituting the reflow processing space S into a small space, the solvent concentration in the reflow processing space S can be easily made uniform, and the reflow processing in the surface of the substrate G can be achieved. Consistent and saves solvent usage. Further, a driving mechanism (not shown) for moving the reflow nozzle 110 in the horizontal direction may be provided to move the surface of the substrate G in parallel. A solvent supply port 1 1 4 and a solvent suction port 1 16 are formed on the opposite surface 11 2 of the substrate so as to form a long side opening in the width direction of the substrate G. The solvent supply port 1 14 is connected to the solvent supply source 1 20 via the solvent supply path '1 1 7 and the solvent supply tube 1 1 8 inside the reflux nozzle 1 10 that communicates therewith, and directs the solvent-containing gas. Photoresist on substrate G. Further, in the opening of the solvent supply port 141, a rectifying member 1 22 made of, for example, a porous ceramic and having a fine gas line is disposed, and the gas containing the vaporized solvent is oriented. The substrate G is blown out. The solvent suction port 161 forms an opening having a long side in the width direction of the substrate G on the opposing surface 11 2 of the substrate, and passes through the exhaust path 123 and the exhaust pipe 124 inside the return nozzle 110 communicating therewith. It is connected to an attraction mechanism 126 that attracts a pump or the like. In the reflow processing unit (REFLW) 50 configured as above, the system is driven
圖中未顯示之旋轉驅動機構使滾輪51旋轉，而將基板G -20- 200839848 往χ方向搬運。之後’於基板G通過回流噴嘴的下 方時，將包含溶劑之氣體，經由溶劑供應管118及溶劑供 應路徑1 1 7，從溶劑供應口 1 1 4朝向基板G的表面供應。 從溶劑供應口 1 1 4所吹出之包含溶劑之氣體’對基板G 表面並非呈垂直，而是以特定的傾斜角度吐出至回流處理 空間S。供應至回流處理空間S之包含溶劑之氣體，係從 溶劑吸入口 1 1 6被吸入，並且經由排氣路徑1 23、排氣管 124予以回收。由於回流噴嘴110之基板對向面112與基 板G之間爲狹窄的回流處理空間S，因此，於此回流處理 空間S中，包含溶劑之氣體可形成朝向溶劑吸入口 1 1 6之 單向流動。於此過程中，回流處理空間S之環境中的溶劑 被基板G表面的光阻所吸收，使光阻軟化且流動，而形 成變形光阻圖案。於本實施型態中，基板G的行進方向 係與包含溶劑之氣體的流動方向爲相同，但基板G的行 進方向與包含溶劑之氣體的流動方向亦可爲相反（對向 流）。 此外’如第10圖的例子所示，於1個回流處理單元 (REFLW)50內，可配置複數個回流噴嘴11〇a、11〇b，因 此能夠對1片基板G，分爲數階段實施依據第丨回流噴嘴 110a之1次回流處理、依據第2回流噴嘴11〇b之2次回 流處理…般之回流處理。此時，於各回流噴嘴〗10a、i l〇b 中可進行同一內容之處理，亦可針對每個回流噴嘴 1 1 0a、1 1 Ob改變其處理條件，例如溶劑的濃度、溶劑的 種類、處理溫度、處理時間等而進行回流處理。於本實施 -21 - 200839848 型態中，可於滾輪5 1的內部設置溫度調節媒體流路5 i a 而進行基板G的溫度調節，此外，亦可於回流噴嘴1 1 〇 的內部設置溫度調節手段，而調節包含溶劑之氣體的溫 第1 1圖係顯示回流噴嘴的變形例。此回流噴嘴 1 1 1，係於較基板對向面1 1 2的溶劑供應口 1 1 4更位於基 板搬運方向的上游位置，具備光源130。光源130係構成 爲，可使特定波長的光，例如波長3〇0〜600nm的光，較 理想爲波長3 00〜400nm的UV光朝向基板G照射。回流 噴嘴1 1 1的其他構成係與第9圖所示的回流噴嘴1 1 〇相 同，因此對於同一構成者，係附加同一圖號並省略其說 明。 於使用回流噴嘴1 1 1進行回流處理時，一旦藉由滾輪 5 1的旋轉將基板G往X方向搬運，首先從設置於較基板 對向面1 1 2的溶劑供應口 1 1 4更位於基板搬運方向的上游 位置之光源1 3 0，朝向基板G的表面進行UV光等之光照 射。藉由光照射，使光所照射的部位之底層膜的表面產生 改質，而促進光阻的流動。依據光照射所進行之底層膜的 改質程度，係因底層膜的材質有所不同，例如於底層膜爲 矽時，較理想爲以矽表面的接觸角爲1 〇度以下，例如 1〜10度之方式地藉由光照射進行改質。 於光照射之後，接著使基板G —邊藉由滾輪51旋轉 一邊往X方向行進。之後將包含溶劑之氣體，從溶劑供 應口 1 1 4朝向進行光照射後之基板G的表面供應。藉由 -22- 200839848 從溶劑吸入口 1 1 6予以吸入，於基板對向面1 1 2與基板G 之間之回流處理空間S中，可形成朝向溶劑吸入口 1 1 6之 單向流動。於此過程中，回流處理空間之環境中的溶劑被 基板G表面的光阻所吸收，使光阻軟化且流動，而形成 變形光阻圖案。於藉由光照射處理進行表面改質後之底層 膜的表面上，可促進因吸收溶劑而軟化之光阻的流動，縮 短回流處理的時間，並提升處理量。此外，可一邊搬運基 板G —邊切換光源1 3 0的開啓/關閉而在基板G上進行局 部性的光照射，藉此，於紫外線照射區域中，可較非紫外 線照射區域更爲增快光阻的流動，因此，可於基板G的 面內改變回流速度及變形光阻的擴散面積，而提升使用變 形光阻作爲掩膜之飩刻的精準度。 接下來參照第12圖，說明於回流處理單元（REFLW) 5 0所進行之本發明之回流方法的原理。在此，係說明於 TFT製程中進行回流處理之情況。第12圖（a)〜（c)係顯示 回流方法的步驟順序。如第1 2圖（a)所示，於由玻璃等的 透明基板所構成之絕緣基板20 1上，形成有閘極電極與圖 中未顯示的閘極線，並依下列順序層積有氮化砂膜等的鬧 極絕緣膜203、a-Si(非晶矽）膜204、作爲歐姆接觸層之 n + S i膜2 0 5、源極電極2 0 6 a、汲極電極2 0 6 b、源極用光 阻掩膜210及汲極用光阻掩膜211。源極電極206a及汲 極電極2 0 6b，係以源極用光阻掩膜2 1 0及汲極用光阻掩 膜21 1爲掩膜進行蝕刻，使作爲底層膜之n + Si膜205的 表面暴露出。 -23- 200839848 接著，對於具有此層積構造之被處理體，於回流處理 系統100的回流處理單元（REFLW)50中，使用溶劑環境 形成器（回流處理器53、54或回流噴嘴1 1〇、1 1 1)形成稀 釋劑等的溶劑環境，而對源極用光阻掩膜2 1 0及汲極用光 阻掩膜2 1 1進行回流處理。藉由此回流處理，可使構成源 極用光阻掩膜2 1 0及汲極用光阻掩膜2 1 1之光阻軟化並具 有流動性，如第1 2圖（b)所示，能夠以流動的光阻將源極 電極206a與汲極電極20 6b之間的凹部220 (通道形成區域） 之n + Si膜205的表面予以覆蓋。此時的回流處理，係以 於下一步驟中對n + Si膜205及a-Si膜204進行蝕刻時， 可防止通道形成區域之n+Si膜205及a-Si膜204被飩刻 爲目的而進行。如此，係使構成源極用光阻掩膜2 1 0及汲 極用光阻掩膜2 1 1之光阻回流而作爲光阻掩膜重新利用， 藉此，係具有可省略微影製程之優點。 之後，於下一步驟中以變形光阻212爲掩膜對n +Si 膜205及a-Si膜204進行蝕刻，然後再去除變形光阻 212，藉此，如第12圖（〇所示，可獲得TFT元件之通道 區域形成用的層積體。以下的步驟，可藉由已知的步驟， 使用源極電極206a與汲極電極206b作爲蝕刻掩膜，對凹 部220內所暴露出之n + Si膜205進行蝕刻而予以去除， 藉此形成通道區域，然後以覆蓋此通道區域與源極電極 206a及汲極電極206b之方式形成有機膜後，藉由微影技 術，以蝕刻形成連接於源極電極206a(汲極電極206b)之 接觸孔，接著以氧化銦錫（IT0)等形成透明電極，藉此製 -24 - 200839848 造出液晶顯示裝置用的TFT元件。 如上所述，本發明之回流處理單元（REFLW)50 備：以大致呈水平的姿勢支撐基板G之作爲基板支 件的複數個滾輪5 1 ;及可在接近此滾輪5 1所支撐之 G的位置上相對地移動而設置，且於基板G上方的回 理空間S形成溶劑環境之溶劑環境形成器（回流處 5 3、5 4或回流噴嘴1 1 0、1 1 1 );藉此，可抑制回流處 間S之溶劑濃度的濃淡不一而使溶劑濃度達到一致， 可較以往之處理室方式的回流處理裝置，更能夠達到 G面內之回流處理的一致性。 此外，由於不需進行於處理室方式的回流處理裝 必需進行之基板的搬入·搬出動作，或是回流處理前 處理室內的環境置換，且能夠一邊以滾輪51搬運基 一邊進行回流處理，因此可大幅提升回流處理的處理 此外，溶劑環境形成器係具備：連接於溶劑供應 並將溶劑供應至基板上方的回流處理空間S之溶劑 口；及連接於吸引機構，並吸引供應至回流處理空間 溶劑之溶劑吸入口；並且於較小的回流處理空間中進 劑的供應·吸氣，藉此，可防止溶劑的洩漏並節省溶 使用量。 以上係說明本發明的實施型態，但本發明並不限 此實施型態。例如於上述說明中，係以對LCD用玻 板進行回流處理之回流處理系統1 〇〇爲例進行說明， 對其他平面顯示器（FPD)基板或半導體晶圓等基板上 係具 撐構 基板 流處 理器 理空 因此 基板 置中 後之 板G 晕 ° 源， 供應 S的 行溶 劑的 定於 璃基 但在 所形 -25- 200839848 成之光阻進行回流處理之情況下，亦可適用本發明。 此外，於上述實施型態中，係構成爲一邊以滾輪5 1 搬運基板G —邊進行回流處理，但亦可構成爲，對靜止 的基板G —邊移動溶劑環境形成器（回流處理器53、54或 回流噴嘴110、111)一邊進行回流處理。 產業上之可利用性 本發明例如於TFT元件等之半導體裝置的製造中， 乃極爲適用。 【圖式簡單說明】 第1圖係說明回流處理系統的槪要之圖式。 第2圖係顯示第1實施型態之回流處理單元（REFLW) 的槪略構成之圖式。 第3圖係顯示回流處理器之外觀立體圖。 第4圖係顯示回流處理器之縱向剖面圖。 第5圖係顯示其他實施型態之回流處理器之外觀立體 圖。 第6圖係顯示其他實施型態之回流處理器之縱向剖面 圖。 第7圖係顯示第2實施型態之回流處理單元（REFLW) 的槪略構成之圖式。 第8圖係顯示回流噴嘴的底部之立體圖。 第9圖係顯示回流噴嘴之縱向剖面圖。 第1 〇圖係顯示回流噴嘴的變形例之圖式。 -26· 200839848 第1 1圖係顯示回流噴嘴的其他變形例之圖式。 第1 2圖係說明回流方法的製程例之圖式。 【主要元件符號說明】 1 :卡匣站 2 :處理站 3 :控制部 2 0 :迴轉單元 30:重新顯像處理單元（REDEV) 40 :黏附單元（AD) 50 :回流處理單元（REFLW) 5 3 :回流處理器 5 5 :溶劑供應部 5 7 :溶劑吸入部 5 9 :頂板 63 :底板 65 :基板對向面 67 :溶劑供應管 6 9 :溶劑供應口 73 :排氣管 75 :溶劑吸入口 80 :力口熱·冷卻處理單元（HP/COL) 100 :回流處理系統 G :基板 -27-A rotary drive mechanism (not shown) rotates the roller 51 to carry the substrate G -20-200839848 in the χ direction. Then, when the substrate G passes under the reflux nozzle, the solvent-containing gas is supplied from the solvent supply port 1 1 4 toward the surface of the substrate G via the solvent supply pipe 118 and the solvent supply path 117. The solvent-containing gas "ejected from the solvent supply port 141" is not perpendicular to the surface of the substrate G, but is discharged to the reflow processing space S at a specific inclination angle. The solvent-containing gas supplied to the reflow processing space S is taken in from the solvent suction port 1 16 and recovered through the exhaust path 133 and the exhaust pipe 124. Since the substrate facing surface 112 of the reflux nozzle 110 and the substrate G have a narrow reflow processing space S, in this reflow processing space S, the gas containing the solvent can form a one-way flow toward the solvent suction port 116. . In this process, the solvent in the environment of the reflow processing space S is absorbed by the photoresist of the surface of the substrate G, and the photoresist is softened and flows to form a deformed photoresist pattern. In the present embodiment, the traveling direction of the substrate G is the same as the flow direction of the gas containing the solvent, but the traveling direction of the substrate G and the flow direction of the gas containing the solvent may be opposite (opposing flow). Further, as shown in the example of Fig. 10, a plurality of reflow nozzles 11a and 11b can be disposed in one reflow processing unit (REFLW) 50, so that one substrate G can be implemented in several stages. The reflow treatment is performed in accordance with the first reflow treatment of the second reflux nozzle 110a and the second reflow treatment according to the second reflow nozzle 11b. In this case, the same content can be processed in each of the reflux nozzles 10a and 10b, and the processing conditions can be changed for each of the reflux nozzles 1 1 0a and 1 1 Ob, such as the concentration of the solvent, the type of the solvent, and the treatment. The temperature is retreated by the temperature, the treatment time, and the like. In the present embodiment-21-200839848, the temperature adjustment medium flow path 5 ia can be provided inside the roller 51 to adjust the temperature of the substrate G, and a temperature adjustment means can be provided inside the return nozzle 1 1 〇. The temperature of the gas containing the solvent is adjusted to show a modification of the reflux nozzle. The reflow nozzle 1 1 1 is provided at a position upstream of the substrate supply direction in the solvent supply port 1 1 4 of the substrate facing surface 112, and is provided with a light source 130. The light source 130 is configured to emit light of a specific wavelength, for example, light having a wavelength of 3 〇 0 to 600 nm, and preferably UV light having a wavelength of 300 00 to 400 nm toward the substrate G. The other configuration of the reflow nozzle 1 1 1 is the same as that of the reflow nozzle 1 1 所示 shown in Fig. 9. Therefore, the same reference numerals will be given to the same components, and the description thereof will be omitted. When the reflow process is performed using the reflow nozzle 11 1 , once the substrate G is transferred in the X direction by the rotation of the roller 5 1 , the solvent supply port 1 1 4 disposed on the opposite substrate facing surface 1 1 2 is first located on the substrate. The light source 130 of the upstream position in the conveyance direction irradiates light such as UV light toward the surface of the substrate G. By the light irradiation, the surface of the underlying film at the portion where the light is irradiated is modified to promote the flow of the photoresist. The degree of modification of the underlying film by light irradiation differs depending on the material of the underlying film. For example, when the underlying film is ruthenium, it is preferable that the contact angle of the ruthenium surface is 1 〇 or less, for example, 1 to 10 The quality is modified by light irradiation. After the light irradiation, the substrate G is then moved in the X direction while being rotated by the roller 51. Thereafter, a gas containing a solvent is supplied from the solvent supply port 1 1 4 toward the surface of the substrate G after the light irradiation. It is sucked from the solvent suction port 1 16 by -22-200839848, and a unidirectional flow toward the solvent suction port 1 16 can be formed in the reflow processing space S between the substrate facing surface 112 and the substrate G. In this process, the solvent in the environment of the reflow processing space is absorbed by the photoresist of the surface of the substrate G, and the photoresist is softened and flows to form a deformed photoresist pattern. On the surface of the underlayer film which is surface-modified by light irradiation treatment, the flow of the photoresist which is softened by the absorption of the solvent can be promoted, the time of the reflow treatment can be shortened, and the amount of treatment can be increased. Further, it is possible to perform local light irradiation on the substrate G while switching the opening/closing of the light source 130 by transferring the substrate G, whereby the ultraviolet irradiation region can be brighter than the non-UV irradiation region. The flow of the resistance, therefore, can change the reflow speed and the diffusion area of the deformed photoresist in the plane of the substrate G, and improve the precision of etching using the deformed photoresist as a mask. Next, referring to Fig. 12, the principle of the reflow method of the present invention performed by the reflow processing unit (REFLW) 50 will be described. Here, the case of performing reflow processing in the TFT process will be described. Fig. 12 (a) to (c) show the sequence of steps of the reflow method. As shown in Fig. 22 (a), a gate electrode and a gate line not shown in the figure are formed on an insulating substrate 20 1 made of a transparent substrate such as glass, and nitrogen is laminated in the following order. a noise insulating film 203 such as a sand film, an a-Si (amorphous germanium) film 204, an n + S i film 205 as an ohmic contact layer, a source electrode 2 0 6 a, and a drain electrode 2 0 6 b. The source photoresist mask 210 and the photoresist mask 211 for the drain. The source electrode 206a and the drain electrode 2 0 6b are etched by using the source photoresist mask 2 1 0 and the drain photoresist mask 21 1 as a mask to make the n + Si film 205 as an underlying film. The surface is exposed. -23- 200839848 Next, for the object to be processed having this laminated structure, a solvent environment former (reflow processor 53, 54 or reflux nozzle 1 1 ) is used in the reflow processing unit (REFLW) 50 of the reflow processing system 100. 1 1 1) A solvent environment such as a diluent is formed, and the source photoresist mask 2 10 and the drain photoresist mask 21 are reflowed. By this reflow process, the photoresist constituting the source photoresist mask 2 1 0 and the drain photoresist mask 21 1 can be softened and have fluidity, as shown in FIG. 2(b). The surface of the n + Si film 205 of the recess 220 (channel formation region) between the source electrode 206a and the drain electrode 20 6b can be covered with a flowing photoresist. In the reflow treatment at this time, when the n + Si film 205 and the a-Si film 204 are etched in the next step, the n + Si film 205 and the a-Si film 204 in the channel formation region are prevented from being engraved as The purpose is to proceed. In this manner, the photoresist constituting the source photoresist mask 2 1 0 and the drain photoresist mask 21 is recirculated as a photoresist mask, whereby the lithography process can be omitted. advantage. Thereafter, in the next step, the n + Si film 205 and the a-Si film 204 are etched using the deformed photoresist 212 as a mask, and then the deformed photoresist 212 is removed, whereby, as shown in FIG. 12 (〇, A laminate for forming a channel region of a TFT element can be obtained. In the following steps, the source electrode 206a and the drain electrode 206b can be used as an etching mask by a known step, and the exposed portion of the recess 220 is exposed. + Si film 205 is removed by etching, thereby forming a channel region, and then forming an organic film so as to cover the channel region and source electrode 206a and drain electrode 206b, and then forming a connection by etching by lithography The contact hole of the source electrode 206a (the drain electrode 206b) is then formed into a transparent electrode by indium tin oxide (ITO) or the like, thereby producing a TFT element for a liquid crystal display device from -24,398,488. As described above, the present invention Reflow processing unit (REFLW) 50: supporting a plurality of rollers 5 1 as a substrate support of the substrate G in a substantially horizontal posture; and relatively movable at a position close to the G supported by the roller 51 Set and above the substrate G The space S forms a solvent environment former for the solvent environment (reflow portion 5 3, 5 4 or reflux nozzles 1 1 0, 1 1 1 ); thereby, the solvent concentration of S at the reflow point can be suppressed to make the solvent different. The concentration is consistent, and the reflow treatment in the G-plane can be achieved more consistently than in the conventional reflow processing apparatus of the processing chamber. In addition, it is not necessary to carry out the substrate transfer in the processing chamber type reflow processing apparatus. The carry-out operation or the environmental replacement in the treatment chamber before the reflow treatment, and the reflow treatment can be performed while transporting the substrate by the roller 51, so that the reflow treatment can be greatly improved. Further, the solvent environment former has a solvent supply and is connected The solvent is supplied to the solvent port of the reflow processing space S above the substrate; and the solvent suction port connected to the suction mechanism and sucking the solvent supplied to the reflow processing space; and the supply and inhalation of the injection agent in the smaller reflow processing space, Thereby, leakage of the solvent can be prevented and the amount of dissolved use can be saved. The above describes the embodiment of the present invention, but the present invention is not limited thereto. For example, in the above description, the reflow processing system 1 for reflowing the glass panel for LCD is described as an example, and the substrate is supported on other flat panel display (FPD) substrates or semiconductor wafers. The substrate flow processor is empty, so the plate G after the substrate is placed in the source, the solvent of the supply S is set on the glass base, but in the case of the reflow of the photoresist of the shape -25-200839848, Further, in the above-described embodiment, the substrate G is transported while being conveyed by the roller 5 1 , but the solvent substrate may be moved to the stationary substrate G (reflow). The processors 53, 54 or the return nozzles 110, 111) are subjected to a reflow process. Industrial Applicability The present invention is extremely useful, for example, in the manufacture of a semiconductor device such as a TFT element. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic diagram showing a schematic diagram of a reflow processing system. Fig. 2 is a schematic view showing a schematic configuration of a reflow processing unit (REFLW) of the first embodiment. Figure 3 is a perspective view showing the appearance of the reflow processor. Figure 4 is a longitudinal cross-sectional view showing the reflow processor. Fig. 5 is a perspective view showing the appearance of a reflow processor of another embodiment. Figure 6 is a longitudinal cross-sectional view showing a reflow processor of another embodiment. Fig. 7 is a view showing a schematic configuration of a reflow processing unit (REFLW) of the second embodiment. Figure 8 is a perspective view showing the bottom of the reflux nozzle. Figure 9 is a longitudinal sectional view showing the reflux nozzle. The first drawing shows a diagram of a modification of the reflow nozzle. -26·200839848 Fig. 11 is a view showing another modification of the reflux nozzle. Fig. 12 is a diagram showing a process example of the reflow method. [Description of main component symbols] 1 : Card station 2 : Processing station 3 : Control unit 2 0 : Swing unit 30 : Re-development processing unit (REDEV) 40 : Adhesion unit (AD) 50 : Reflow processing unit (REFLW) 5 3: Reflow processor 5 5 : solvent supply portion 5 7 : solvent suction portion 5 9 : top plate 63 : bottom plate 65 : substrate facing surface 67 : solvent supply pipe 6 9 : solvent supply port 73 : exhaust pipe 75 : solvent suction Port 80: Heat and heat treatment unit (HP/COL) 100: Reflow treatment system G: Substrate-27-