1281704 (1) 九、發明說明 【發明所屬之技術領域】 本發明關於在被處理基板表面形成處理液之膜，和曝 光裝置連動而於基板形成特定圖案的基板處理系統。 【先前技術】 例如LCD之製造，係於被處理基板之LCD基板形成 φ 特定膜之後，塗敷光阻劑液形成阻劑膜，和電路圖案對應 地曝光阻劑膜，對其施予顯像處理等之藉由所謂微影成像 技術（photolithography)形成電路圖案。 於該微影成像技術，被處理基板之LCD基板，主要 工程係經由洗淨處理θ脫水烘乾疏水化處理—阻劑塗敷 前段烘乾—曝光—顯像—後段烘乾之一連串處理而於阻 劑層形成特定之電路圖案。 於上述阻劑塗敷顯像處理裝置，在LCD基板塗敷阻 # 劑液形成阻劑膜之方法，例如爲使阻劑液以帶狀塗敷之阻 劑供給噴嘴與LCD基板，朝和噴嘴噴出口之長邊方向正 交之方向相對移動而施予塗敷之方法。此情況下，於阻劑 供給噴嘴設置具有朝基板寬度方向延伸之微小間隙的狹縫 (slit )狀噴出□，由該狹縫狀噴出口以帶狀噴出之阻劑 液被供給至基板表面全體而形成阻劑膜。 依該方法，自基板之一邊至另一邊以帶狀噴出（供給 )阻劑液，阻劑液不會浪費，可於角型基板全面形成阻劑 膜。又’採用此種塗敷膜形成方法之塗敷膜形成裝置揭示 -5- 1281704 (2) 於例如專利文獻】（特開平1 0- 1 5 62 5 5 )。 專利文獻1 :特開平1 0- 1 5 625 5 (第3頁右欄第5行 至弟4頁左欄第6彳了，第1圖）。 【發明內容】 (發明所欲解決之課題） 但是，上述塗敷膜形成方法之塗敷膜形成裝置，若僅 φ 單純想提升膜形成處理之效率，則如圖1 4所示，設置2 個由：載置基板G之平台2 0 0，阻劑供給噴嘴2 01，及調 整附著於噴嘴201前端之阻劑液狀態的噴嘴待機部202構 成之裝置即可。如此則，可於各平台2 0 0並行對基板進行 膜形成處理。 但是，此情況下，存在塗敷膜形成裝置之面積及裝置 成本增大之問題。 另外，即使解決上述問題，提升塗敷膜形成裝置之作 • 業效率情況下/因爲曝光裝置之處理速度太慢，在對曝光 裝置之基板搬送階段，處理將大爲滯留，阻劑塗敷顯像處 理裝置（基板處理系統）全體之效率無法被提升。 本發明有鑑於上述問題，目的在於提供一種，在被處 理基板表面塗敷形成處理液之膜，和曝光裝置連動而於基 板形成特定圖案的基板處理系統，其可對各基板均勻塗敷 處理液，可提升和曝光裝置連動時之基板處理效率。 (用以解決課題的手段） -6- (3) 1281704 爲解決上述問題，本發明之基板處理系統，係在被處 理基板表面塗敷形成處理液之膜，和曝光裝置連動而於基 板形成特定圖案的基板處理系統，其特徵爲具備：塗敷膜 形成手段，具有：分別載置被處理基板的第1平台與第2 平台；及對上述第1平台與第2平台分別載置之被處理基 板表面塗敷處理液而形成膜的處理液塗敷手段；及基板搬 送手段，對多數曝光裝置，進行經由上述塗敷膜形成手段 • 形成有膜的被處理基板之搬送。 如上述說明，藉由2個平台並列配置，對各平台載置 之被處理基板可進行有效之塗敷處理。亦即，—方平台 之塗敷處理中，可進行另一方平台之搬出入作業。相較於 習知單一平台，可節省基板搬出入所要時間，可提升作業 效率。 又，對多數曝光裝置具備進行基板搬送之基板搬送手 段，可減低基板之曝光處理前之滯留，因此，和曝光裝置 # 連動時之基板處理系統全體之基板處理作業效率更能提升 〇 又，較好是另具有：使被處理基板配合基板處理方向 而於水平方向旋轉的1個或多數基板旋轉手段。 依此構成，欲縮小基板處理系統全體之面積時，可自 由配置基板處理系統具有之各處理單元。亦即，即使處理 單元間之基板處理方向不同時，可配合次一工程藉由基板 旋轉手段調整基板之方向。 又，較好是，上述處理液塗敷手段具備：1個處理液 (4) 1281704 供給噴嘴，其具有於被處理基板之寬度方向延伸的狹縫狀 噴出口；噴嘴移動手段，用於移動上述處理液供給噴嘴； 處理液供給手段，用於對上述處理液供給噴嘴供給處理液 ;及均勻化處理手段，用於使來自上述噴出口之處理液朝 旋轉自如地形成之輥之周面噴出，藉由旋轉上述輥而對上 1 述噴出口附著之處理液施予均勻化處理； 藉由上述處理液供給噴嘴，對第I平台與第2平台載 # 置之被處理基板表面塗敷處理液。 又，較好是，上述均勻化處理手段設置於上述第I平 台與第2平台之間。 又，較好是，對上述被處理基板之塗敷處理之前，上 述噴嘴移動手段，係使上述處理液供給噴嘴之噴出口接近 上述輥之周面，對上述噴出口附著之處理液施予均勻化處 理。 依此構成，對任一、平台載置之基.板，對處理液供給噴 # 嘴之噴出口附著之處理液施予均勻化處理後，可立刻進行 塗敷處理。因此，對任一平台處理之基板，可進行膜厚均 勻之塗敷處理，可提升作業效率。 又，較好是，上述均勻化處理手段具備輥旋轉控制手 段用於控制上述輥之旋轉，對上述噴出口附著之處理液施 予均勻化處理時，上述輥旋轉控制手段，係依據該均勻化 處理後之塗敷處理之於上述第I平台或上述第2平台之任 一被進行，而決定上述輥之旋轉方向。 依此構成，於噴嘴前端部，可以噴出口爲境界，控制 -8 - (5) P81704 成爲在噴嘴進行方向之相反側附著較多處理液，亦即，於 噴嘴前端部以噴出口爲境界，在噴嘴進行方向之相反側附 著較多處理液之狀態下，可抑制塗敷開始時塗敷膜不均勻 引起之掃引痕跡等之發生。 又，較好是於上述均勻化處理手段設置保溼手段，用 於抑制上述處理液供給噴嘴前端之乾燥。 藉由保溼手段之設置，待機時可抑制噴嘴前端之乾燥 •。 又，較好是，上述均勻化處理手段具備第1均勻化處 理手段與第2均勻化處理手段，上述第1均勻化處理手段 與第2均勻化處理手段，係分別配置於上述第1平台與第 2平台之右側或左側。 又，較好是對上述第1平台載置之被處理基板之塗敷 處理之前，上述噴嘴移動手段，係使上述處理液供給噴嘴 之噴出口接近上述輥之周面，上述第1均勻化處理手段對 # 上述噴出口附著之處理液施予均勻化處理，而且，對上述 第2平台載置之被處理基板之塗敷處理之前，上述噴嘴移 動手段，係使上述處理液供給噴嘴之噴出口接近上述輥之 周面，上述第2均勻化處理手段對上述噴出口附著之處理 液施予均勻化處理。 〆 如上述說明，藉由2個平台並列配置，對各平台載置 之被處理基板可進行有效之塗敷處理。亦即，在一方平台 之塗敷處理中’可進行另一方平台之搬出入作業。相較於 習知單一平台，可節省基板搬出入所要時間，可提升作業 -9- 1281704 * (6) 效率。 又，分別配置和各平台對應之輥，因此，對任一平台 載置之基板，對處理液供給噴嘴之噴出口附著之處理液施 予均勻化處理後，可立刻進行塗敷處理。因此，對任一平 台處理之基板，可進行膜厚均勻之塗敷處理，可提升作業 效率。 又，較好是，上述第1與第2均勻化手段具備輥旋轉 φ 控制手段用於控制上述輥之旋轉’上述第1均勻化處理手 段之輥，與上述第2均勻化處理手段之輥之旋轉方向爲同 一方向。 依此構成，於噴嘴前端部，可以噴出口爲境界，控制 成爲在噴嘴進行方向之相反側附著較多處理液，亦即，於 噴嘴前端部以噴出口爲境界，在噴嘴進行方向之相反側附 著較多處理液之狀態下，可抑制塗敷開始時塗敷膜不均勻 引起之掃引痕跡等之發生。 • 又，較好是，於上述第1均勻化處理手段或上述第2 均勻化處理手段設置保溼手段，用於抑制上述處理液供給 噴嘴前端之乾燥。 藉由保溼手段之設置，待機時可抑制噴嘴前端之乾燥 【實施方式】 以下依圖面說明本發明第1實施形態。圖1爲本發明 之基板處理系統之阻劑塗敷顯像處理裝置第1實施形態之 -10- (7) 1281704 全體構成之平面圖。該阻劑塗敷顯像處理裝置1 〇〇，具備 _·載置多數卡匣C的卡匣平台1，該卡匣C用於收容被處 理基板之多數LCD基板G (以下稱基板G);具備多數 處理單元的處理平台2，該處理單元用於對基板G實施包 含處理液之阻劑液之塗敷與顯像等一連串之處理；及介面 平台3，可於多數（2台）曝光裝置（EXP) 4a、4b之間 進行基板G之收/送。於上述處理平台2之兩端，分別 # 配置上述卡匣平台1及介面平台3。 卡匣平台1具備搬送機構10，可於卡匣C與處理平 台2之間進行基板G之搬出入。該搬送機構10具備搬送 臂11，可移動沿著卡匣C之配列方向設置之搬送路上。 藉由搬送臂1 1可於卡匣C與處理平台2之間進行基板G 之搬送。 處理平台2具有X方向延伸之基板G搬送用之平行2 列之搬送列A、B。沿著搬送列A，自卡匣平台1側至介 Φ 面平台3配列擦拭洗淨處理單元（SCR) 21、第1熱處理 單元區段26、阻劑塗敷處理單元23、及第2熱處理單元 區段27。於擦拭洗淨處理單元（SCR) 21上之一部分設 置激光UV照射單元（e-UV) 22。 又，沿著搬送列B，自介面平台3側至卡匣平台1側 配置顯像處理單元（DEV ) 24、i線UV照射單元（i-UV )25，及第3熱處理單元28。 第1熱處理單元區段2 6，係由對基板G施予加熱處 理或冷卻處理的熱處理單元多段積層而呈之多數熱處理區 -11 - (8) 1281704 塊構成。亦即，由對基板G師欲阻劑塗敷前之加熱處理 的烘乾單元、藉由HMDS氣體施予疏水化處理的疏水化處 理單元等被積層之熱處理區塊26a、26b，及將基板G冷 卻至特定溫度的冷卻單元26c構成。 又，於第1熱處理單元區段26中央配置垂直搬送單 元（S/A) 5，其具有基板G搬送用之搬送臂（未圖示） 。垂直搬送單元（S/A)5之搬送臂，可於X、Y、Z軸 # 方向移動，而且可於水平方向旋動。亦即，垂直搬送單元 (S/ Α) 5之搬送臂，係存取第1熱處理單元區段26中 各熱處理區塊26a、26b、26c’進彳了基板G之搬送。 阻劑塗敷處理單元23，係由作爲塗敷膜形成手段之 阻劑塗敷裝置（CT ) 23a，減壓乾燥單元（VD ) 23b構成 ’如圖示，分別鄰接垂直搬送單元（S/A) 6配置。 又，垂直搬送單元（S/A) 6，係和垂直搬送單元（ S/A) 5爲同一構成之單元全體，但於X軸方向可較大移 # 動。亦即，於阻劑塗敷裝置（CT) 23a，對於X軸方向並 列配置之2個平台，可以1個搬送單元對應。又，對減壓 乾燥單元23b之基板G之搬送，亦藉由垂直搬送單元（S / A ) 6進行。 又，阻劑塗敷裝置（CT ) 23 a之詳細如後述。 第2熱處理單元區段27係由包圍垂直搬送單元（S/ A) 7之周圍配置的3個熱處理區塊27a、27b、27c構成 ο[Brief Description of the Invention] [Technical Field] The present invention relates to a substrate processing system in which a film of a processing liquid is formed on a surface of a substrate to be processed, and a specific pattern is formed on the substrate in conjunction with the exposure device. [Prior Art] For example, after the LCD is formed on the LCD substrate of the substrate to be processed to form a φ specific film, the photoresist liquid is applied to form a resist film, and the resist film is exposed corresponding to the circuit pattern, and the developing process is applied thereto. The circuit pattern is formed by so-called photolithography. In the lithography imaging technology, the LCD substrate of the substrate to be processed, the main engineering system is processed by the washing process θ dehydration drying hydrophobicization treatment—resistive coating drying-exposure-development-post-stage drying The resist layer forms a specific circuit pattern. In the above-mentioned resist coating development processing apparatus, a method of forming a resist film by applying a resist liquid to an LCD substrate, for example, a resist agent is applied in a strip shape to supply a nozzle and an LCD substrate, and a nozzle A method in which the direction in which the longitudinal direction of the discharge port is orthogonal to each other is applied to apply the coating. In this case, a slit-like discharge □ having a small gap extending in the width direction of the substrate is provided in the resist supply nozzle, and the resist liquid discharged from the slit-shaped discharge port in a strip shape is supplied to the entire surface of the substrate. A resist film is formed. According to this method, the resist liquid is ejected (supplied) from one side of the substrate to the other side, and the resist liquid is not wasted, and the resist film can be formed entirely on the angle substrate. Further, a coating film forming apparatus using such a coating film forming method discloses -5 - 1281704 (2), for example, a patent document (Japanese Patent Laid-Open Publication No. Hei No. Hei No. Hei. Patent Document 1: Special Kaiping 1 0- 1 5 625 5 (Page 3, right column, 5th line, to the 4th page, left column, 6th, and 1st picture). [Problem to be Solved by the Invention] However, in the coating film forming apparatus of the coating film forming method, if only φ simply wants to improve the efficiency of the film forming process, as shown in FIG. It suffices that the platform 200 on which the substrate G is placed, the resist supply nozzle 211, and the nozzle standby unit 202 that adjusts the state of the resist liquid adhered to the tip end of the nozzle 201 may be used. In this way, the substrate formation process can be performed on the substrate in parallel on each of the platforms. However, in this case, there is a problem that the area of the coating film forming apparatus and the cost of the apparatus increase. In addition, even if the above problem is solved, if the manufacturing efficiency of the coating film forming apparatus is increased/because the processing speed of the exposure apparatus is too slow, the processing will be largely retained during the substrate transfer stage of the exposure apparatus, and the resist coating is applied. The efficiency of the entire processing device (substrate processing system) cannot be improved. The present invention has been made in view of the above problems, and an object thereof is to provide a substrate processing system in which a film for forming a processing liquid is applied to a surface of a substrate to be processed, and a specific pattern is formed on the substrate in conjunction with an exposure device, which can uniformly apply a treatment liquid to each substrate. It can improve the substrate processing efficiency when the exposure device is linked. (Means for Solving the Problem) -6- (3) 1281704 In order to solve the above problems, the substrate processing system of the present invention applies a film for forming a processing liquid on the surface of a substrate to be processed, and is associated with the exposure device to form a specific substrate. A substrate processing system of a pattern, comprising: a coating film forming means comprising: a first stage and a second stage on which the substrate to be processed is placed; and a processed surface on the first stage and the second stage The processing liquid application means for forming a film by coating the surface of the substrate with the substrate; and the substrate transfer means for transporting the substrate to be processed through which the film formation means is formed by the coating film forming means. As described above, the substrate to be processed placed on each of the platforms can be effectively coated by the parallel arrangement of the two platforms. That is, in the coating process of the square platform, the loading and unloading operation of the other platform can be performed. Compared with the conventional single platform, the time required for the substrate to move in and out can be saved, and the work efficiency can be improved. Moreover, since a plurality of exposure apparatuses are provided with a substrate transfer means for transferring a substrate, the retention of the substrate before the exposure processing can be reduced, so that the substrate processing operation efficiency of the entire substrate processing system when the exposure apparatus # is interlocked can be improved. It is preferable to have one or a plurality of substrate rotating means for rotating the substrate to be processed in the horizontal direction in accordance with the substrate processing direction. According to this configuration, when the area of the entire substrate processing system is to be reduced, each processing unit included in the substrate processing system can be freely disposed. That is, even if the processing direction of the substrate between the processing units is different, the direction of the substrate can be adjusted by the substrate rotating means in accordance with the next process. Moreover, it is preferable that the processing liquid application means includes one processing liquid (4) 1281704 supply nozzle having a slit-shaped ejection opening extending in the width direction of the substrate to be processed, and a nozzle moving means for moving the above a treatment liquid supply nozzle for supplying a treatment liquid to the treatment liquid supply nozzle; and a homogenization treatment means for ejecting the treatment liquid from the discharge port to a circumferential surface of the roller that is rotatably formed, And applying a homogenization treatment to the treatment liquid adhered to the discharge port by rotating the roller; and applying a treatment liquid to the surface of the substrate to be treated on the first platform and the second platform carrier by the processing liquid supply nozzle . Further, preferably, the homogenization processing means is provided between the first platform and the second stage. Further, preferably, before the coating treatment of the substrate to be processed, the nozzle moving means is such that the discharge port of the processing liquid supply nozzle approaches the circumferential surface of the roller, and the treatment liquid adhered to the discharge port is uniformly applied. Processing. According to this configuration, the treatment liquid adhering to the discharge port of the processing liquid supply nozzle can be uniformly applied to the base plate on which any of the platforms are placed, and the coating treatment can be performed immediately. Therefore, the substrate treated on any of the platforms can be uniformly coated with a uniform film thickness, thereby improving work efficiency. Moreover, it is preferable that the homogenization processing means includes a roller rotation control means for controlling the rotation of the roller, and when the treatment liquid adhering to the discharge port is subjected to a homogenization treatment, the roller rotation control means is based on the homogenization The coating treatment after the treatment is performed on either the first stage or the second stage, and the rotation direction of the rolls is determined. According to this configuration, at the nozzle tip end portion, the discharge port can be used as a boundary, and the control -8 - (5) P81704 has a large amount of treatment liquid attached to the opposite side of the nozzle direction, that is, the discharge port is at the tip end portion of the nozzle. In a state where a large amount of the treatment liquid adheres to the opposite side of the direction in which the nozzle is applied, it is possible to suppress the occurrence of a scan mark or the like due to uneven coating film at the start of coating. Further, it is preferable to provide a moisturizing means in the homogenizing means for suppressing drying of the tip end of the processing liquid supply nozzle. By the setting of the moisturizing means, the drying of the nozzle tip can be suppressed during standby. Moreover, it is preferable that the homogenization processing means includes a first homogenization processing means and a second homogenization processing means, and the first homogenization processing means and the second homogenization processing means are respectively disposed on the first platform and Right or left side of the 2nd platform. Moreover, it is preferable that the nozzle moving means is such that the discharge port of the processing liquid supply nozzle approaches the circumferential surface of the roller before the coating process of the substrate to be processed placed on the first stage, and the first uniformization process is performed. By applying a homogenization treatment to the treatment liquid to which the discharge port is attached, and before the coating treatment of the substrate to be processed placed on the second stage, the nozzle moving means is configured to supply the discharge port of the processing liquid supply nozzle The second homogenization processing means applies a homogenization treatment to the treatment liquid to which the discharge port is attached, in proximity to the circumferential surface of the roller. 〆 As described above, the substrate to be processed placed on each platform can be effectively coated by placing the two platforms in parallel. That is, in the coating process of one of the platforms, the loading and unloading operation of the other platform can be performed. Compared with the conventional single platform, the time required for the substrate to move in and out can be saved, and the efficiency of the operation -9-1281704 * (6) can be improved. Further, since the rolls corresponding to the respective stages are disposed, the processing liquid which adheres to the discharge port of the processing liquid supply nozzle can be subjected to the coating treatment immediately after the substrate placed on any of the stages is subjected to the homogenization treatment. Therefore, it is possible to apply a uniform film thickness to the substrate processed by any of the stages, thereby improving work efficiency. Moreover, it is preferable that the first and second homogenizing means include a roller rotation φ control means for controlling the rotation of the roller 'the first uniform processing means roller, and the second uniformizing means roller The direction of rotation is the same direction. According to this configuration, at the nozzle tip end portion, the discharge port can be used as a boundary, and a large amount of the treatment liquid is attached to the opposite side of the nozzle direction, that is, the nozzle tip end portion is at the discharge boundary, and the nozzle is opposite to the direction of the nozzle. When a large amount of the treatment liquid is adhered, it is possible to suppress the occurrence of a scan mark or the like due to uneven coating film at the start of coating. Further, it is preferable that the first homogenizing means or the second homogenizing means is provided with a moisturizing means for suppressing drying of the tip end of the processing liquid supply nozzle. By the setting of the moisturizing means, the drying of the nozzle tip can be suppressed during standby. [Embodiment] Hereinafter, the first embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a plan view showing the overall configuration of a resistive coating development processing apparatus for a substrate processing system according to a first embodiment of the present invention. The resist coating application processing apparatus 1 includes a cassette platform 1 on which a plurality of cassettes C are placed, and the cassette C is used to accommodate a plurality of LCD substrates G (hereinafter referred to as a substrate G) of the substrate to be processed; a processing platform 2 having a plurality of processing units for performing a series of processes such as coating and development of a resist liquid containing a processing liquid on the substrate G; and an interface platform 3 for a plurality of (2) exposure apparatuses (EXP) The receiving/receiving of the substrate G is performed between 4a and 4b. At the two ends of the processing platform 2, the above-mentioned card platform 1 and interface platform 3 are respectively configured. The cassette platform 1 is provided with a transport mechanism 10, and the substrate G can be carried in and out between the cassette C and the processing platform 2. The transport mechanism 10 includes a transport arm 11 and is movable on a transport path provided along the arrangement direction of the cassette C. The transfer of the substrate G between the cassette C and the processing platform 2 is performed by the transfer arm 1 1 . The processing table 2 has two parallel rows of transport columns A and B for transporting the substrate G extending in the X direction. A wipe cleaning processing unit (SCR) 21, a first heat treatment unit section 26, a resist coating processing unit 23, and a second heat treatment unit are arranged along the transport column A from the cassette platform 1 side to the Φ surface platform 3. Section 27. A laser UV irradiation unit (e-UV) 22 is provided on a portion of the wiping cleaning processing unit (SCR) 21. Further, along the transport column B, a development processing unit (DEV) 24, an i-line UV irradiation unit (i-UV) 25, and a third heat treatment unit 28 are disposed from the interface platform 3 side to the cassette platform 1 side. The first heat treatment unit section 2 6 is composed of a plurality of heat treatment units which are subjected to heat treatment or cooling treatment on the substrate G, and which are formed by a plurality of heat treatment zones -11 - (8) 1281704. That is, the heat treatment block 26a, 26b which is laminated by the heat treatment before the application of the substrate G, the hydrophobization treatment unit which is hydrophobized by the HMDS gas, and the like G is cooled to a specific temperature by a cooling unit 26c. Further, a vertical transfer unit (S/A) 5 is disposed in the center of the first heat treatment unit section 26, and has a transfer arm (not shown) for transporting the substrate G. The transfer arm of the vertical transfer unit (S/A) 5 can be moved in the X direction of the X, Y, and Z axes, and can be rotated in the horizontal direction. That is, the transfer arm of the vertical transfer unit (S/Α) 5 accesses the heat transfer blocks 26a, 26b, and 26c' of the first heat treatment unit section 26 to carry the transfer of the substrate G. The resist coating processing unit 23 is composed of a resist coating device (CT) 23a as a coating film forming means, and a reduced-pressure drying unit (VD) 23b is formed as shown in the figure, adjacent to the vertical transfer unit (S/A, respectively). ) 6 configuration. Further, the vertical transfer unit (S/A) 6 and the vertical transfer unit (S/A) 5 are all of the units having the same configuration, but can be largely moved in the X-axis direction. In other words, in the resist application device (CT) 23a, two platforms arranged in parallel in the X-axis direction may correspond to one transfer unit. Further, the conveyance of the substrate G of the decompression drying unit 23b is also performed by the vertical transfer unit (S / A) 6. Further, the details of the resist application device (CT) 23a will be described later. The second heat treatment unit section 27 is composed of three heat treatment blocks 27a, 27b, and 27c disposed around the periphery of the vertical transfer unit (S/A) 7.
垂直搬送單元（S/A) 7，係和垂直搬送單元（S/A -12- (9) 1281704 )5具有同一構成，進行對3個熱處理區塊27a、27b、 27c之基板般送。 第3熱處理單元28由和垂直搬送單元（S/A) 8鄰 接之2個熱處理區塊28a、28b構成。 垂直搬送單元（S / A) 8，係和垂直搬送單元（S/A )5具有同一構成，進行對2個熱處理區塊28a、28b之 基板般送。 # 介面平台3具有：作爲基板搬送手段之垂直搬送單元 (S/A) 42a、42b，可於曝光裝置（EXP ) 4a、4b之間 分別進行基板G之搬出入；及配置緩衝卡匣的緩衝平台 (BUF ) 43a、43b。 又，垂直搬送單元（S/A) 42a、42b具有和上述垂 直搬送單元（S/A) 5同一之構成。 又，介面平台3具有來自處理平台2之基板受取部的 垂直搬送單元（S/A) 44。垂直搬送單元（S/A) 44，The vertical transfer unit (S/A) 7 and the vertical transfer unit (S/A -12-(9) 1281704) 5 have the same configuration, and are transported to the substrates of the three heat treatment blocks 27a, 27b, and 27c. The third heat treatment unit 28 is composed of two heat treatment blocks 28a and 28b adjacent to the vertical transfer unit (S/A) 8. The vertical transfer unit (S / A) 8 has the same configuration as the vertical transfer unit (S/A) 5, and is sent to the substrates of the two heat treatment blocks 28a and 28b. #Interface platform 3 includes: vertical transfer units (S/A) 42a and 42b as substrate transfer means for carrying in and out of the substrate G between the exposure devices (EXP) 4a and 4b; and buffering of the buffer card Platform (BUF) 43a, 43b. Further, the vertical transfer units (S/A) 42a and 42b have the same configuration as the above-described vertical transfer unit (S/A) 5. Further, the interface platform 3 has a vertical transfer unit (S/A) 44 from the substrate receiving portion of the processing platform 2. Vertical transport unit (S/A) 44,
• 係和垂直搬送單元（S/A) 5爲同一構成之單元全體，但 於Y軸方向可較大移動，由處理平台2被傳送來之基板G ，可藉由垂直搬送單元（S/A) 44對2個緩衝平台（ BUF ) 43a、43b進行搬送。 緩衝平台（BUF ) 43a、43b，爲暫時收容搬送至曝光 裝置（EXP ) 4a、4b之基板G的區塊，於其下段部設置 基板旋轉手段之基板旋轉單元（ROT ) 46。亦即，於緩衝 平台（BUF) 43a、43b，基板G係藉由上述基板旋轉單元 (ROT) 46配合曝光裝置（EXP ) 4a、4b之基板處理方向 -13- (10) 1281704 而被旋轉、暫時收容。 另外，介面平台3具有：外部裝置區塊45，其由標 記裝置（TITLER )與周邊曝光裝置（EE )上下積層而成 。於該外部裝置區塊45與垂直搬送單元（S/A) 42a之 間，設置基板旋轉手段之基板旋轉單元（ROT ) 46。亦即 ，基板G，藉由曝光裝置（EXP) 4a、4b之曝光處理後， 藉由垂直搬送單元（S/A) 42a或垂直搬送單元（S/A) # 44搬送至基板旋轉單元（R〇T) 46，於此，配合次一工程 之基板處理方向而被旋轉。 於上述構成之阻劑塗敷顯像處理裝置1 00，首先，卡 匣平台1配置之卡匣C內之基板G，藉由搬送裝置10搬 入處理平台2後，進行激光UV照射單元（e-UV) 22之 擦拭前處理、擦拭洗淨處理單元（SCR) 21之擦拭洗淨處 理。 接著，基板G被搬入第1熱處理單元區段26所屬熱 Φ 處理單元區塊（HP、COL) 26a、26b、26c，進行一連串 之熱處理（脫水烘乾處理、疏水化處理等）。 之後，基板G被搬入阻劑塗敷處理單元23，施予阻 劑液之膜形成處理。於該阻劑塗敷處理單元2 3，首先於 阻劑塗敷裝置（CT ) 23a對基板G塗敷阻劑液，之後，於 減壓乾燥單元（V D ) 2 3 b進行減壓乾燥處理。 阻劑塗敷處理單元23之阻劑成膜處理後，基板G被 搬入第2熱處理單元區段27所屬熱處理單元區塊（HP、 COL) 27a、27b、27c，進行一連串熱處理（前段烘乾處 •14- (11) 1281704 理等）。 之後，藉由垂直搬送單元（S/A) 44，基板G被搬 入外部裝置區塊45之周邊曝光裝置（EE)，於此，對基 板G進行周邊阻劑除去之曝光。之後，藉由垂直搬送單 元（S/ A ) 44，基板G暫時交互收容於緩衝平台（BUF )43a、43b，收容之基板G，藉由垂直搬送單元（S/A) 42a、42b被搬送至2台曝光裝置（EXP) 4a、4b之任一 ·〇 亦即，緩衝平台（BUF ) 43a收容之基板G，藉由垂 直搬送單元（S/A) 42a被搬送至曝光裝置（EXP) 4a， 緩衝平台（BUF ) 43b收容之基板G，藉由垂直搬送單元 (S/A) 42b被搬送至曝光裝置（EXP) 4b。 於曝光裝置（EXP ) 4a、4b，基板G上之阻劑膜被曝 光形成特定圖案。 曝光結束後，藉由垂直搬送單元（S/A) 42a、42b # 、44 ’基板G暫時被搬送至基板旋轉單元（ROT) 46。於 此’配合次一工程之基板處理方向，而於水平方向進行基 板之旋轉。 之後’基板G被搬送至外部裝置區塊45之上段之標 記裝置（TITLER )被標記特定資訊。之後，藉由輥輪搬 送機構將基板G再度搬送至處理平台2。首先，基板G被 搬入顯像處理單元（DEV ) 24進行顯像處理。 顯像處理結束後，基板G由顯像處理單元（DEV ) 24 搬入i線UV照射單元（i-UV ) 25，對基板G施予脫色處 -15- (12) 1281704 理。之後，基板G被搬入第3熱處理單元2 8，於熱處理 單元區塊（HP) 28a、2b進行一連串熱處理（後段烘乾處 理等）。 基板G被冷卻至特定溫度後，藉由輸送帶搬送搬送 至卡匣平台1，藉由搬送裝置11收容於特定之卡匣C。 以下依圖2、3說明阻劑塗敷處理單元23具有之阻劑 塗敷裝置（CT) 23a。 • 圖2爲阻劑塗敷裝置（CT)23a之外觀斜視圖。圖3 爲阻劑塗敷裝置（CT) 23a之側面圖。 該阻劑塗敷裝置（CT ) 23a，係由··將基板G保持於 水平的平台50(第1平台）及平台59(第2平台），及 對彼等平台載置之基板G塗敷阻劑液的處理液塗敷手段 構成。 處理液塗敷手段，具備：配設於平台5 0、5 9上方的 阻劑供給噴嘴（處理液供給噴嘴）5 1，及移動該阻劑供給 # 噴嘴5 1 (以下稱噴嘴5 1 )的噴嘴移動手段86，及對噴嘴 5 1供給阻劑液的阻劑液供給源95 (處理液供給手段）。 於該構成，藉由噴嘴移動手段86水平移動噴嘴51， 依此則可使平台5 0、5 9上之基板G ( G 1、G2 )與噴嘴5 1 獲得相對水平移動。 又，如圖3所示，平台50與平台59分別具備：具有 升降可能之吸著機構的基板保持部50a、59a，搬入之基 板G由基板保持部5 0 a、5 9 a受取、保持。 又，如圖2所示，噴嘴5 1具有：延伸於基板G1、G2 -16- (13) 1281704 之寬度方向的狹縫狀噴出口 5 1 a，及與該噴出口 5 ；[ a 的阻劑液收容室（未圖示），介由該阻劑液收容室連 阻劑液供給管57被連接阻劑液供給源95。 又，如圖4之擴大斷面圖所示，噴嘴51之前端 由其短邊側觀察成爲推拔形狀，沿著噴嘴短邊方向， 出口 5 1 a前後分別形成下端面5 1 b及傾斜面5丨c。該 5 1，於塗敷處理時之進行方向具有方向性。亦即，如 • 所示，噴嘴進行方向之相反側之下端面5 1 b，其之噴 邊方向之長度形成爲幅度較寬。依此則，噴出之阻劑 可藉由下端面51b之面被押著於基板百面，塗敷處理 定進行。 又，如圖2、3所示，上述處理液塗敷手段，係 台平台5 0與平台5 9之間具有噴嘴待機部5 5 (均勻 理手段）。該噴嘴待機部5 5具備：待機時使噴嘴5 1 附著之阻劑液均勻化（稱爲均勻化處理）的旋轉自如 • 勻化輥52，及爲洗淨該均勻化輥52而浸漬於稀釋劑 器5 3，及抑制噴嘴5 1前端之乾燥用的保溼部（保溼 )54 〇 又，如圖5所示，在基板之塗敷處理前之均勻化 ，噴嘴51前端被近接配置於均勻化輥52之周面。由 口 5 1 a噴出阻劑液R，藉由輥旋轉控制手段6 5使均 輥5 2旋轉，而進行噴嘴5 1前端附著之阻劑液R之均 處理。• The system and the vertical transport unit (S/A) 5 are the same unit of the same configuration, but can move largely in the Y-axis direction. The substrate G transported by the processing platform 2 can be transported by the vertical transport unit (S/A). 44 pairs of two buffer platforms (BUF) 43a, 43b are transported. The buffer platforms (BUF) 43a and 43b are blocks for temporarily storing the substrates G transferred to the exposure devices (EXP) 4a and 4b, and a substrate rotation unit (ROT) 46 for the substrate rotating means is provided in the lower portion. That is, in the buffer platforms (BUF) 43a, 43b, the substrate G is rotated by the substrate rotation unit (ROT) 46 in cooperation with the substrate processing direction -13 - (10) 1281704 of the exposure devices (EXP) 4a, 4b, Temporary containment. Further, the interface platform 3 has an external device block 45 which is formed by stacking a mark device (TITLER) and a peripheral exposure device (EE). A substrate rotation unit (ROT) 46 for substrate rotation means is provided between the external device block 45 and the vertical transfer unit (S/A) 42a. That is, the substrate G is subjected to exposure processing by the exposure means (EXP) 4a, 4b, and then transferred to the substrate rotating unit by the vertical transfer unit (S/A) 42a or the vertical transfer unit (S/A) #44. 〇T) 46, here, rotated in accordance with the substrate processing direction of the next project. In the above-described resist-coating development processing apparatus 100, first, the substrate G in the cassette C disposed on the cassette platform 1 is carried into the processing stage 2 by the transfer apparatus 10, and then a laser UV irradiation unit (e- UV) 22 pre-wiping treatment, wiping cleaning treatment unit (SCR) 21 wiping and washing treatment. Then, the substrate G is carried into the heat Φ processing unit blocks (HP, COL) 26a, 26b, and 26c to which the first heat treatment unit section 26 belongs, and subjected to a series of heat treatments (dehydration drying treatment, hydrophobization treatment, etc.). Thereafter, the substrate G is carried into the resist coating processing unit 23, and a film forming process of the resist liquid is applied. In the resist application processing unit 23, first, a resist liquid is applied to the substrate G in a resist application device (CT) 23a, and then dried under reduced pressure in a reduced-pressure drying unit (V D ) 2 3 b. After the resist film forming process of the resist coating processing unit 23, the substrate G is carried into the heat treatment unit blocks (HP, COL) 27a, 27b, and 27c to which the second heat treatment unit section 27 belongs, and a series of heat treatments are performed (front drying section) • 14- (11) 1281704, etc.). Thereafter, the substrate G is carried into the peripheral exposure device (EE) of the external device block 45 by the vertical transfer unit (S/A) 44, and the substrate G is exposed by the peripheral resist removal. Thereafter, the substrate G is temporarily exchanged and accommodated in the buffer platforms (BUF) 43a and 43b by the vertical transfer unit (S/A) 44, and the substrate G accommodated is transported to the vertical transfer unit (S/A) 42a, 42b to Any one of the two exposure devices (EXP) 4a and 4b, that is, the substrate G accommodated in the buffer stage (BUF) 43a is transported to the exposure device (EXP) 4a by the vertical transfer unit (S/A) 42a. The substrate G housed in the buffer stage (BUF) 43b is transported to the exposure device (EXP) 4b by the vertical transfer unit (S/A) 42b. In the exposure apparatus (EXP) 4a, 4b, the resist film on the substrate G is exposed to form a specific pattern. After the exposure is completed, the substrate G is temporarily transferred to the substrate rotating unit (ROT) 46 by the vertical transfer units (S/A) 42a, 42b #, 44'. Here, the substrate processing direction of the next project is performed, and the substrate is rotated in the horizontal direction. Thereafter, the tag device (TITLER) to which the substrate G is transported to the upper portion of the external device block 45 is marked with specific information. Thereafter, the substrate G is again transported to the processing platform 2 by the roller transport mechanism. First, the substrate G is carried into the development processing unit (DEV) 24 to perform development processing. After the development processing is completed, the substrate G is carried into the i-line UV irradiation unit (i-UV) 25 by the development processing unit (DEV) 24, and the substrate G is subjected to decolorization -15-(12) 1281704. Thereafter, the substrate G is carried into the third heat treatment unit 28, and a series of heat treatments (post-stage drying treatment, etc.) are performed in the heat treatment unit blocks (HP) 28a, 2b. After the substrate G is cooled to a specific temperature, it is transported to the cassette platform 1 by a conveyor belt, and is accommodated in a specific cassette C by the transport unit 11. The resist application device (CT) 23a of the resist coating treatment unit 23 will be described below with reference to Figs. • Fig. 2 is a perspective view showing the appearance of a resist application device (CT) 23a. Figure 3 is a side view of a resist application device (CT) 23a. The resist coating device (CT) 23a is a substrate 50 (first platform) and a platform 59 (second platform) that hold the substrate G at a level, and a substrate G placed on the platforms. The treatment liquid coating means of the resist liquid is constituted. The treatment liquid application means includes a resist supply nozzle (treatment liquid supply nozzle) 5 1 disposed above the stages 50 and 59, and a movement of the resist supply # nozzle 5 1 (hereinafter referred to as a nozzle 5 1 ) The nozzle moving means 86 and the resist liquid supply source 95 (processing liquid supply means) for supplying the resist liquid to the nozzle 51. With this configuration, the nozzles 51 are horizontally moved by the nozzle moving means 86, whereby the substrates G (G1, G2) on the stages 50, 59 and the nozzles 5 1 can be relatively horizontally moved. Further, as shown in Fig. 3, the stage 50 and the stage 59 each include a substrate holding portion 50a and 59a having a suction mechanism for lifting and lowering, and the carried in the substrate G is received and held by the substrate holding portions 5a and 59a. Further, as shown in FIG. 2, the nozzle 51 has a slit-like discharge port 5 1 a extending in the width direction of the substrate G1, G2 - 16 - (13) 1281704, and a discharge port 5; The agent liquid storage chamber (not shown) is connected to the resist liquid supply source 95 via the resist liquid storage chamber connecting resist liquid supply pipe 57. Further, as shown in the enlarged cross-sectional view of Fig. 4, the front end of the nozzle 51 is formed into a push-out shape as viewed from the short side thereof, and the lower end face 5 1 b and the inclined face are respectively formed in front and rear of the outlet 5 1 a along the short side direction of the nozzle. 5丨c. The 151 has a directionality in the direction of the coating process. That is, as shown in Fig., the lower end surface 5 1 b of the opposite side of the nozzle is formed, and the length of the spray direction is formed to have a wide width. Accordingly, the discharged resist can be held on the surface of the substrate by the surface of the lower end surface 51b, and the coating treatment is carried out. Further, as shown in Figs. 2 and 3, the processing liquid application means has a nozzle standby portion 5 5 (uniform means) between the platform platform 50 and the stage 59. The nozzle standby unit 55 includes a revolving/smoothing roller 52 that homogenizes the resist liquid to which the nozzle 5 1 adheres during standby (referred to as a homogenization treatment), and immerses the dilution roller 52 in the dilution. The medicinal device 5 3 and the moisturizing portion (moisturizing) for suppressing the drying of the tip end of the nozzle 5 1 are further homogenized before the coating treatment of the substrate as shown in FIG. 5, and the tip end of the nozzle 51 is closely arranged. The peripheral surface of the roller 52 is homogenized. The resist liquid R is ejected from the port 5 1 a, and the homogenate roller 5 2 is rotated by the roller rotation control means 65 to perform the uniform treatment of the resist liquid R attached to the tip end of the nozzle 5 1 .
又，如圖5所示，由噴出口 5 1 a噴出之阻劑液R 連通 接之 部， 在噴 噴嘴 圖4 嘴短 液R 可穩 於平 化處 前端 之均 的容 手段 處理 噴出 勻化 勻化 流向 -17- (14) 1281704 均勻化輥5 2之旋轉方向。因此，於均勻化處理後，於噴 嘴5 1前端之一方側，沿著均勻化輥5 2之旋轉方向，成爲 較另一方附著更多阻劑液之狀態。又，於塗敷處理時，噴 嘴51之移動方向被控制成爲，以噴出口 51a爲境界使阻 劑液R附著較少之側成爲進行方向。如此則，塗敷開始時 之掃引痕跡等之發生可被抑制，塗敷膜更能均勻化。 又，如圖5所示，於均勻化輥5 2中途設置刷除器91 •。該刷除器9 1，係由耐藥品性樹脂構成，前端滑接於均 勻化輥52之周面，可除去周面上不要之上回進入之阻劑 液或稀釋劑8 9。 又，刷除器91之前端形狀，只要能發揮該阻劑液除 去功能即可，除此例使用之楔形斷面以外，可採用矩形斷 面或二股狀斷面形狀之任意形狀。 又，該刷除器91構成爲，可使藉由汽缸90接觸均勻 化輥5 2周面的下位置，與由均勻化輥5 2周面遠離之上位 • 置之間升降’必要時可變更其位置。 又，如圖2所示，於噴出口 5 1 a之長邊方向兩側設置 膜厚控制手段8 0，用於減低由噴出口 5 1 a噴出之阻劑液R 之噴出壓。該膜厚控制手段80，係由··吸引管82，其分 別接於連通噴出口 5 1 a之長邊方向兩側的連通路8丨；及 設於吸引管82的例如隔膜型泵等之吸引泵83構成，藉由 吸引泵8 3之驅動可減低噴出口 5〗&兩側之噴出壓。又， 於吸引管82之吸引泵83之吸引側，亦即噴嘴5 1側設置 開/關閥84。 -18- (15) 1281704 以下說明上述構成之阻劑塗敷裝置（C T ) 2 3 a 態樣。最初，如圖2所示，說明對平台5 0載置之I 塗敷阻劑液R之動作。 首先，將噴嘴51配置於噴嘴待機部5 5，使藉 臂64搬送之基板gi吸著保持於平台50上。此時 平台5 0上設置之基板保持部5 0a吸著基板G 1。由 供給源95對噴嘴5 1內之阻劑液收容室供給阻劑液 • 時’藉由噴嘴移動手段86使噴嘴5 1由噴嘴待機部 動至平台5 0左側端部上方。 之後，噴嘴5 1，由噴出口 5 1 a噴出阻劑液R， G1上往右方向移動。噴出口 51a與基板G之距離 40— 150//m，較好是設爲 60//m。 此時，驅動吸引泵83，吸引噴出口 5 1 a之長 兩側，使噴出口 5 1 a兩側之阻劑液R之噴出壓減少 出口 5 1 a中央部側之噴出壓與兩側之噴出壓大略相 # 態下，亦即阻劑液R之液膜相等之狀態下對基板< 帶狀噴出（供給）。因此，藉由基板G與噴嘴5 1 水平移動可於基板G表面以帶狀供給阻劑液R，可 G表面全體形成均勻膜厚之阻劑膜。 於基板G表面形成阻劑膜後，停止阻劑液R 之同時，移動噴嘴5 1至待機位置，使噴嘴5 1之 5 1a近接噴嘴待機部55內之均勻化輥52，準備次 處理。又，形成有阻劑膜之基板G，藉由垂直搬送 由平台50被搬送至減壓乾燥單元（VD) 23b。 之動作 ^板G1 由搬送 ，藉由 阻劑液 R之同 55移 於基板 設爲約 邊方向 ，在噴 等之狀 G上以 之相對 於基板 之供給 噴出口 一塗敷 單元6 -19- (16) 1281704 以下依圖6、7說明於阻劑塗敷裝置（c T ) 2 3 a，對 多數基板連續進行塗敷處理時之噴嘴5 1之動作。圖6爲 噴嘴5 1之移動方向模式圖。圖7爲噴嘴5 1之動作控制工 程之流程。 首先，使噴嘴5 1近接噴嘴待機部5 5之均勻化輥5 2 ，進行噴嘴51前端之均勻化處理（圖7之步驟s〗）。於 平台5 0上’當未塗敷處理狀態之基板〇 1被搬送（圖7 • 之步驟S2 )時，噴嘴51移動至平台5〇之左側端部，進 行對基板G 1之阻劑液R之塗敷（圖7之步驟s 3 )。又， 此時，噴嘴5 1移動於圖6之箭頭方向，塗敷處理被進行 〇 之後，噴嘴5 1移動至噴嘴待機部5 5，進行噴嘴5】 前端之均勻化處理（圖7之步驟S4)。於平台59上，當 未塗敷處理狀態之基板G 1被搬送（圖7之步驟S 5 )時， 噴嘴5 1移動至平台5 9之右側端部，進行對基板G2之阻 φ 劑液R之塗敷（圖7之步驟S6)。又，此時，噴嘴51移 動於圖6之箭頭方向，塗敷處理被進行。 回至圖7之步驟S1之處理，之後，未塗敷處理狀態 之基板連續被搬送至各平台時，依據上述流程對基板進行 塗敷處理。 又，於上述步驟S2或步驟S5，平台上未被搬送基板 時，噴嘴5 1於均勻化處理後移動至保溼部54，使噴嘴5 1 前端於未乾燥狀態下待機（圖7之步驟S7 )。 如上述說明，噴嘴5 1於塗敷處理時之進行方向具有 -20- 6 1281704 (17) 方向性，因此，於塗敷處理時，對基板G1、G2，如圖 所示藉由噴嘴移動手段8 6控制移動之動作，使噴嘴5 1 同一方向移動移基板上。 依上述第1實施形態，藉由2個平台5 0、5 9之並 配置，可有效進行各平台上載置之基板G之塗敷處理 亦即，於一方之塗敷處理中可進行另一方平台之搬出入 業，較習知單一平台可節省基板搬出入所要時間，可提 _ 作業效率。 又，於2個平台5 0、5 9間配置噴嘴待機部5 5，對 一平台載置之基板G，於噴嘴5 1之均勻化處理後，可 刻進行塗敷處理。因此，對任一平台載置之基板G可 行膜厚均勻之塗敷處理。 又，和圖14所示具備平台、噴嘴、噴嘴待機部構 之2個裝置比較，可縮小面積，可降低裝置成本。 又，依上述實施形態之構成，即使在平台5 0或平 鲁 59之任一方因爲基板保持部50a、59a故障而無法進行 敷處理時，藉由和圖7所示流程獨立之流程之動作，可 行另一方平台之塗敷處理。亦即，平台5 0側發生故障 ，可依序重複進行噴嘴51前端之均勻化處理及平台59 未處理基板G2之塗敷處理。另外，平台59側發生故 時，可依序重複進行噴嘴51前端之均勻化處理及平台 上未處理基板G1之塗敷處理。因此，可迴避上述故障 起之阻劑塗敷顯像處理裝置1 00之運轉中斷。 又，依上述構成之阻劑塗敷顯像處理裝置1 〇〇，具 於 列 〇 作 升 任 進 成 台 塗 進 時 上 障 50 引 備 -21 - (18) 1281704 對多數（2台）曝光裝置4a、4b搬送基板的垂直搬送單 元42a、42b。因此，藉由2個平台可有效降低塗敷膜形 成處理之基板G之曝光處理前之滯留。因此，和曝光裝 置連動時之阻劑塗敷顯像處理裝置（基板處理系統）全體 之基板處理之作業效率更能提升。 又，依該構成，在進行基板搬送之垂直搬送單元（S / A )周圍配置各熱處理單元及阻劑塗敷處理單元23，另 φ 外，於需要位置配置配合次一工程之基板處理方向而使基 板G於水平方向旋轉的基板旋轉單元。依此則，各處理 單元可迴避一方向之並列試製，可達成阻劑塗敷顯像處理 裝置之小型化。 又，上述實施形態說明之阻劑塗敷裝置23a之構成及 動作控制僅爲一例，並不限定於此。以下一圖8 — 1 0說明 本發明之基板處理系統包含之阻劑塗敷裝置之第1變形例 〇 # 圖8爲阻劑塗敷裝置之第1變形例之模式側面圖。圖 9爲圖8之阻劑塗敷裝置具備之阻劑供給噴嘴之塗敷處理 之說明圖。圖1 〇爲圖8之阻劑塗敷裝置具備之阻劑供給 噴嘴之均勻化處理之說明圖。 如圖8所示，於第1變形例，噴嘴5 1，藉由噴嘴移 動手段86之動作控制，可將塗敷處理時之移動方向變更 爲平台5 0側或平台5 9側。 又，如圖9所示，噴嘴5 1前端部，挾持噴出口 5 1 a 呈對向之下端面5 1 b同時形成寬幅。依此則，不論噴嘴 -22- (19) 1281704 51之進行方向爲箭頭所示任一方向’藉由下端部5〗b之 面使噴出之阻劑液R朝基板表面押壓’可進行穩定之塗敷 〇 又，於圖1 〇之均勻化處理，輥旋轉控制手段65，係 依據次一塗敷處理在平台5 0或平台5 9之任一被進行而決 定輥5 2之旋轉方向。亦即，於噴嘴51前端，以噴出口 5 1 a爲境界，使較多阻劑液R附著於次一塗敷處理之噴嘴 φ 進行方向之相反側，而決定輥5 2之旋轉方向。 又，如圖示，挾持噴嘴5 1於輥52之左右，分別設置 刷除器9 1，依輥5 2之旋轉方向而控制使任一刷除器9 1 滑接輥52之周面。亦即，依輥52之旋轉方向而驅動任一 汽缸90，控制刷除器91之升降動作。 依阻劑塗敷裝置23a之第1變形例，對平台50載置 之基板G1或平台59載置之基板G2之任一，於均勻化處 理後立刻可移動噴嘴5 1至處理之基板方向，可直接進行 _ 塗敷處理。 亦即，相較於噴嘴5 1之進行方向具有方向性而言， 噴嘴5 1之移動動作不會有浪費，因此，可以在不增加配 置空間情況下，提升作業效率，亦可抑制噴嘴5 1前端之 乾燥。 以下依圖1 1說明阻劑塗敷裝置2 3 a之第2變形例。 ® 1 1爲阻劑塗敷裝置23a之第2變形例之模式側面 圖。如圖11所示，分別載置基板G1、G2之平台5〇與平 台5 9橫向並列配置，在平台5 9相反側之平台5 0之鄰接 -23- (20) 1281704 配置噴嘴待機部5 5 (均勻化處理手段）。 於該阻劑塗敷裝置2 3 a ’由噴嘴待機部5 5移動之晴 嘴5 1，首先塗敷處理平台5 0上之基板G1，之後，塗敷 處理平台59上之基板G2’之後再度回至噴嘴待機部551 〇 依阻劑塗敷裝置23a之第2變形例，對平台5〇與平 台5 9分別載置之基板G 1、基板G2可連續進行塗敷處理 φ ，可增加單位時間之處理片數。 但是，於阻劑塗敷裝置2 3 a之第2變形例，於基板 G 1之塗敷處理後，塗敷處理中乾燥固化之阻劑液將附著 於狹縫狀噴出口周邊。因此，於該狀態下進行次一基板 G2之塗敷處理時，噴出口之阻劑液噴出將紊亂，存在無 法對應之基板面進行均勻化之塗敷處理問題。 因此，作爲解決上述問題之例，依圖1 2說明阻劑塗 敷裝置23a之第3變形例。圖12爲阻劑塗敷裝置之第3 # 變形例之模式側面圖。如圖12所示，將輥5 2 (第1均勻 化處理手段）及保溼部5 4配置於平台5 0左側，將輥6 3 (第2均勻化處理手段）配置於平台5 9左側。 亦即，輥6 3配置於平台5 0與平台5 9之間。保溼部 54亦可配置爲與輥63鄰接。又，將輥52及保溼部54配 置於平台50右側，將輥63配置於平台59右側亦可（未 圖示）。此情況下，保溼部5 4可鄰接平台5 9配置。又， 上述輥52與輥63於同一方向旋轉。 依上述構成，首先，輥52之均勻化處理後進行平台 -24- (21) 1281704 50之基板G1之塗敷處理，接著，於輥63之均勻化處理 後進行對平台5 9之基板G2之塗敷處理。 依阻劑塗敷裝置2 3 a之第3變形例，對平台5 0與平 台59分別載置之基板G1、基板G2之任一，可塗敷處理 前進行均勻化處理，可解決第2變形例之問題。 又，相較於圖4之阻劑塗敷裝置23a之構成，會增大 面積（配置空間）及裝置成本，但是，可獲得和第1變形 # 例之圖8所示阻劑塗敷裝置相同之作業效率。 以下依圖1 3說明作爲本發明基板處理系統之阻劑塗 敷顯像處理裝置第2實施形態。圖1 3爲第2實施形態之 阻劑塗敷顯像處理裝置之全體構成之平面圖。又，和圖1 所示橇成相同者附加同一符號，並省略詳細說明.。 該阻劑塗敷顯像處理裝置1 0 1，係和圖1之阻劑塗敷 顯像處理裝置1 00同樣，沿圖之X軸方向具備卡匣平台1 、處理平台2及介面平台3。 φ 於阻劑塗敷顯像處理裝置1 〇 1，處理平台2，係和圖 1之阻劑塗敷顯像處理裝置1 00同樣，具有沿著X軸方向 延伸之基板G搬送用平行之2列之搬送列a、B。 沿著搬送列A，自卡匣平台1側至介面平台3配列擦 拭洗淨處理單元（SCR) 21、第1熱處理單元區段26、阻 劑處理單元23、及第2熱處理單元區段27。於擦拭洗淨 處理單元（S C R ) 2 1上之一部分設置激光u V照射單元（ e-UV ) 22。 又，沿著搬送列B，自介面平台3側至卡匣平台1側 -25- (22) 1281704 配置顯像處理單元（DEV ) 24、i線UV照射單元（i-UV )25，及第3熱處理單元28。 第1熱處理單元區段26，係和第1實施形態同樣由 多數熱處理區塊構成，但是，除熱處理區塊26a、26b以 外，具備使使隧道通路藉由輥搬送等進行搬送、自然冷卻 之隧道單元26d。又，具備將基板G冷卻至特定溫度的冷 卻單元26e、26f。 φ 又，於擦拭洗淨處理單元（SCR) 21與第1熱處理單 元區段2 6之間配置，配合次一工程之基板處理方向，使 基板G於水平方向旋轉的作爲基板旋轉手段之基板旋轉 單元（R Ο T ) 12。 又，垂直搬送單元（S/A) 13設於熱處理區塊26a 與熱處理區塊26b之間，作爲使經由基板旋轉單元（ROT )12旋轉之基板G搬送至第1熱處理單元區段26之手段 。垂直搬送單元（S / A ) 1 3，係和第1實施形態之垂直 • 搬送單元（S/A) 5同樣，具有基板G搬送用之搬送臂（ 未圖示）。該搬送臂，可於Χ、γ、ζ軸方向移動，可旋 動。藉由垂直搬送單元（S/A) 13可進行基板G對熱處 理區塊26a、26b之搬送。 又，和Y軸方向並列配置之冷卻單元26e、26f鄰接 設置垂直搬送單元（S/A) 14。垂直搬送單元（S/A) 14，係和垂直搬送單元（S/A) 13爲同一構成之單元全 體，但於X軸方向可較大移動。對2個冷卻單元26e、 2 6f之基板G搬送，可藉由一搬送單元進行。 -26- 1281704 (23) 如圖示，阻劑塗敷處理單元2 3配置成包圍垂直 單元（S/ A) 15。亦即，阻劑塗敷處理單元23具有 劑塗敷裝置（C T ) 2 3 a (阻劑塗敷裝置）及減壓乾燥 (VD) 23c、23d分別鄰接垂直搬送單元（s/a) 15 釐。 垂直搬送單元（S/A) 15，係和垂直搬送單元( A) 13爲同一構成之單元全體，但於γ軸方向可較大 B °因此，阻劑塗敷處理單元23之各裝置之基板G搬 可籍由垂直搬送單元（S/A) 15進行。 關於阻劑塗敷裝置（CT ) 23a，可適用第1實施 同樣之構成（包含第1 -第3變形例），因此省略其 說明。 又，第2熱處理單元區段27，係由包圍垂直搬 元（S/A) 16之四方而配置的4個熱處理區塊27a、 、27c、27d構成。垂直搬送單元（S/A) 16，係和 • 搬送單元（S/A) 13具有同一構成，進行對4個熱 區塊27a、27b、27c、27d之基板般送。 又，於處理平台2，沿著X軸方向，於第3熱處 元28前後設置垂直搬送單元（S/A) 17、18。垂直 單元（S/A) 17、18分別和垂直搬送單元（S/A) 1 有同一構成，進行對熱處理區塊28a、28b之基板G 送。 又，於阻劑塗敷顯像處理裝置1 〇1，介面平台3 由：使基板G配合次一工程之基板處理方向而於水 搬送 之阻 單元 而配 ：S/ 移動 送， 形態 詳細 送單 27b 垂直 處理 理單 搬送 3具 之般 ，係 平方 -27- (24) 1281704 向旋轉的作爲基板旋轉手段之基板旋轉單元（ROT ) l9a 、19b ;及使基板G對2台曝光裝置4a、4b搬送的作爲基 板搬送手段之介面單元20 ;及外部裝置區塊45。 介面單元20，係和垂直搬送單元（S/A) 13具有同 一構成之單元，可於Y軸方向移動自如，可於2台曝光 裝置4a、4b間往來。 以下說明上述構成之阻劑塗敷顯像處理裝置1 0 1之處 • 理工程。 首先，卡匣平台1配置之卡匣C內之基板G，藉由搬 送裝置1 1搬入處理平台2後，進行激光UV照射單元（ e-UV) 22之擦拭前處理、擦拭洗淨處理單元（SCR) 21 之擦拭洗淨處理。 之後，基板G被搬送至基板旋轉單元1 2，於此配合 次一工程之基板處理方向被旋轉之後，基板G被搬入第1 熱處理單兀區段26所屬熱處理單兀區塊26a、26b，進行 • 一連串之熱處理（脫水烘乾處理、疏水化處理等）。之後 ，基板G搬送隧道單元26d被自然冷卻，於冷卻單元26e 、26f被冷卻至特定溫度。 之後，基板G藉由垂直搬送單元（S/A) 14被搬入 阻劑塗敷處理單元23，施予阻劑液之膜形成處理。於該 阻劑塗敷處理單元2 3，如上述第1實施形態之說明，於 阻劑塗敷裝置（CT) 23a對基板G塗敷阻劑液，之後，於 減壓乾燥單元（VD ) 23c、23d進行減壓乾燥處理。 又，設有2台減壓乾燥單元（VD ) ( 23c、23d )， -28- 1281704 (25) 因此，於阻劑塗敷裝置23a，可對塗敷有阻劑之多數基板 G有效地，並列進行減壓乾燥處理，可提升作業效率。 上述阻劑塗敷處理單元23之阻劑成膜處理後，基板 G被搬入第2熱處理單元區段27所屬熱處理單元區塊27a 、27b、27c、27d，進行一連串熱處理（前段烘乾處理等 )0 之後，基板G藉由基板旋轉單元（ROT ) 19a配合次 φ 一工程於水平方向旋轉後，藉由介面單元20被搬送至曝 光裝置4a、4b之任一。又，介面單元20，係和垂直搬送 單元（S/A) 13爲同一構成之單元全體，但於Y軸方向 可較大移動。 於曝光裝置4a、4b，阻劑膜被曝光形成特定圖案後 ，基板G藉由介面單元20被取出，藉由基板旋轉單元（ ROT) 19b配合次一工程施予水平方向旋轉。 之後，基板G被搬送至介面平台3之外部裝置區塊 φ 45之周邊曝光裝置（EE)，進行周邊阻劑除去之曝光。 之後，被搬送至外部裝置區塊45之上段之標記裝置（ TITLER)，於基板G標記特定資訊。 之後，藉由輥輪搬送機構將基板G再度搬送至處理 平台2。首先，基板G被搬入顯像處理單元（DEV ) 24進 行顯像處理。 顯像處理結束後，基板G由顯像處理單元（DEV ) 24 搬入i線UV照射單元（i-UV) 25，對基板G施予脫色處 理。之後，基板G被搬入第3熱處理單元區段2 8，於熱 -29- (26) 1281704 處理單元區塊2 8 a、2 8 b進行一連串熱處理（後段烘乾處 理等）。 之後，基板G被冷卻至特定溫度後，藉由輸送帶搬 送被搬送至卡匣平台1，藉由搬送裝置11收容於特定之 卡匣C。 依上述第2實施形態，如圖1 3所示，具備對多數（2 台）曝光裝置4a、4b搬送基板的介面單元20。因此，藉 φ 由2個平台可有效減低塗敷膜形成後之基板G之曝光處 理前之滯留。因此，和曝光裝置連動時之阻劑塗敷顯像處 理裝置（基板處理系統）全體之基板處理作業效率更能提 升。 另外，依該構成，於進行基板搬送之垂直搬送單元（ S/A)周圍配置各熱處理單元及阻劑塗敷處理單元23, 於需要位置設置基板旋轉單元，可配合次一工程之基板處 理方向使基板G於水平方向旋轉。依此則，各處理單元 •可迴避並列於一方向，可實現阻劑塗敷顯像處理裝置之小 型化。 又’於上述第1實施形態及第2實施形態係以在LCD 基板塗敷形成阻劑膜爲例，但本發明不限定於此，可適用 於將處理液供給至被處理基板上之任意之基板處理系統。 本發明之處理液，除阻劑液以外，可爲例如層間絕緣材料 '介電材料、配線材料等之液體。又，本發明之被處理基 板’不限定於LCD基板，亦可爲半導體晶圓、CD基板、 玻璃基板、光罩、印刷基板等。 -30· (27) 1281704 (產業上可利用性） 本發明適用於在LCD基板或半導體晶圓等形成處理 液之膜的基板處理系統，適用於半導體製造業界，電子裝 置製造業界。 (發明效果） 依本發明可獲得，在被處理基板表面塗敷形成處理液 之膜，和曝光裝置連動而於基板形成特定圖案的基板處理 系統，其可對各基板均勻塗敷處理液，可提升和曝光裝置 連動時之基板處理效率。 【圖式簡單說明】 圖1爲本發明之基板處理系統之阻劑塗敷顯像處理裝 置第1實施形態之全體構成之平面圖。 圖2爲圖1之阻劑塗敷顯像處理裝置具備之阻劑塗敷 裝置之斜視圖。 圖3爲圖2之阻劑塗敷裝置之側面圖。 圖4爲圖2之阻劑塗敷裝置具備之阻劑供給噴嘴之前 端擴大斷面圖。 圖5爲圖2之阻劑塗敷裝置具備之阻劑供給噴嘴之噴 出口附近之阻劑液均勻化處理之說明圖。 圖6爲圖2之阻劑塗敷裝置具備之阻劑供給噴嘴之移 動方向之模式圖。 -31 - (28) 1281704 圖7爲圖2之阻劑塗敷裝置具備之阻劑供給噴嘴之動 作控制工程之流程。 圖8爲圖1之阻劑塗敷顯像處理裝置具備之阻劑塗敷 裝置之第1變形例之模式側面圖。 圖9爲圖8之阻劑塗敷裝置具備之阻劑供給噴嘴之塗 敷處理之說明圖。 圖1 0爲圖8之阻劑塗敷裝置具備之阻劑供給噴嘴之 • 均句化處理之說明圖。 圖1 1爲圖1之阻劑塗敷顯像處理裝置具備之阻劑塗 敷裝置之第2變形例之模式側面圖。 圖1 2爲圖1之阻劑塗敷顯像處理裝置具備之阻劑塗 敷裝置之第3變形例之模式側面圖。 圖1 3爲本發明之基板處理系統之阻劑塗敷顯像處理 裝置第2實施形態之全體構成之平面圖。 圖1 4爲習知具備2台塗敷膜形成裝置時之阻劑供給 φ 噴嘴之動作圖。 【主要元件符號說明】 23 :阻劑塗敷處理單元 23a :阻劑塗敷裝置 50 :平台 5 1 :噴嘴 51a :噴出口 5 1 b :下端面 -32- (29) (29)1281704 5 1 c :傾斜面 52 :均勻化輥（第1均勻化手段） 5 5 :噴嘴待機部（均勻化處理手段） 59 :平台（第2平台） 86 :噴嘴移動手段 63 :均勻化輥（第2均勻化手段） 65 :輥旋轉控制手段 95 :阻劑液供給源（處理液供給手段） 100 :阻劑塗敷顯像處理裝置 1 〇 1 :阻劑塗敷顯像處理裝置 G : LCD基板（被處理基板） G1 : LCD基板（被處理基板） G2 : LCD基板（被處理基板） R :阻劑液（處理液）Further, as shown in Fig. 5, the resist liquid R discharged from the discharge port 5 1 a is in communication with the portion, and the nozzle short liquid R in the spray nozzle can be stabilized at the front end of the flattening portion to handle the spray homogenization. The homogenization flow is directed to the direction of rotation of the -17-(14) 1281704 homogenizing roller 52. Therefore, after the homogenization treatment, on one side of the front end of the nozzle 5, along the rotation direction of the homogenizing roller 52, a state in which more resist liquid adheres to the other side is formed. Further, at the time of the coating treatment, the moving direction of the nozzle 51 is controlled so that the side where the resist liquid R adheres less with the discharge port 51a as the boundary becomes the traveling direction. In this way, the occurrence of sweep marks or the like at the start of coating can be suppressed, and the coating film can be made uniform. Further, as shown in Fig. 5, a brush remover 91 is provided in the middle of the homogenizing roller 52. The brush 911 is made of a chemical-resistant resin, and the tip end is slidably attached to the circumferential surface of the homogenizing roller 52, so that the resist liquid or the diluent 89 which does not come back on the peripheral surface can be removed. Further, the shape of the front end of the brushing device 91 may be any function as long as the resist liquid removing function can be exerted, and any shape other than the wedge-shaped cross-section used in this example may be a rectangular cross-section or a bi-sectional cross-sectional shape. Further, the brush unit 91 is configured such that the lower position of the circumferential surface of the homogenizing roller 52 by the cylinder 90 is brought into contact with the upper surface of the homogenizing roller 52, and the distance between the upper surface and the upper surface of the homogenizing roller 52 can be changed. Its location. Further, as shown in Fig. 2, a film thickness control means 80 is provided on both sides in the longitudinal direction of the discharge port 5 1 a for reducing the discharge pressure of the resist liquid R discharged from the discharge port 5 1 a. The film thickness control means 80 is connected to the communication pipe 8A on both sides in the longitudinal direction of the communication outlet 5 1 a, and the diaphragm type pump provided in the suction pipe 82, for example. The suction pump 83 is configured to reduce the discharge pressure on both sides of the discharge port 5 by the driving of the suction pump 83. Further, an opening/closing valve 84 is provided on the suction side of the suction pump 83 of the suction pipe 82, that is, on the nozzle 5 1 side. -18- (15) 1281704 The resist application device (C T ) 2 3 a of the above configuration will be described below. First, as shown in FIG. 2, the operation of applying the resist liquid R to the I placed on the stage 50 will be described. First, the nozzle 51 is placed in the nozzle standby unit 55, and the substrate gi conveyed by the arm 64 is sucked and held on the stage 50. At this time, the substrate holding portion 50a provided on the stage 50 sucks the substrate G1. When the resist liquid is supplied from the supply source 95 to the resist liquid containing chamber in the nozzle 5, the nozzle 5 is moved from the nozzle standby portion to the upper end portion of the platform 50 by the nozzle moving means 86. Thereafter, the nozzle 51 is ejected from the discharge port 5 1 a by the resist liquid R, and G1 is moved to the right. The distance between the discharge port 51a and the substrate G is 40 - 150 / / m, preferably 60 / / m. At this time, the suction pump 83 is driven to attract both sides of the discharge port 5 1 a so that the discharge pressure of the resist liquid R on both sides of the discharge port 5 1 a is reduced by the discharge pressure on the central portion side of the outlet 5 1 a and both sides. In the state where the discharge pressure is large, the liquid film of the resist liquid R is equal to the substrate < strip discharge (supply). Therefore, the resist liquid R can be supplied in a strip shape on the surface of the substrate G by the horizontal movement of the substrate G and the nozzle 5 1 , and a resist film having a uniform film thickness can be formed on the entire surface of the G. After the resist film is formed on the surface of the substrate G, the resist liquid R is stopped, and the nozzle 51 is moved to the standby position, so that the nozzle 51 is immediately adjacent to the homogenizing roller 52 in the nozzle standby portion 55, and is subjected to secondary processing. Further, the substrate G on which the resist film is formed is transported by the stage 50 to the decompression drying unit (VD) 23b by vertical conveyance. The operation board G1 is transported, and the resist liquid R is moved to the substrate to be in the side direction, and in the spray G or the like, the coating unit 6 -19- is supplied to the discharge port with respect to the substrate. (16) 1281704 Next, the operation of the nozzle 51 in the case where the resist coating device (c T ) 2 3 a is continuously applied to a plurality of substrates will be described with reference to Figs. Fig. 6 is a schematic view showing the moving direction of the nozzle 51. Fig. 7 is a flow chart showing the operation control process of the nozzle 51. First, the nozzle 5 1 is brought close to the uniformizing roller 5 2 of the nozzle standby portion 5 5 to perform uniformization processing of the tip end of the nozzle 51 (step s of Fig. 7). On the platform 50, when the substrate 〇1 in the uncoated state is transported (step S2 of Fig. 7), the nozzle 51 is moved to the left end of the stage 5〇, and the resist liquid R to the substrate G1 is performed. Coating (step s 3 of Figure 7). At this time, the nozzle 51 moves in the direction of the arrow in Fig. 6, and after the coating process is performed, the nozzle 5 1 moves to the nozzle standby portion 5 5, and the nozzle 5 is uniformized at the tip end (step S4 of Fig. 7). ). On the stage 59, when the uncoated state of the substrate G1 is transported (step S5 of FIG. 7), the nozzle 5 1 is moved to the right end of the stage 59 to perform a resistance to the substrate G2. Coating (step S6 of Fig. 7). Further, at this time, the nozzle 51 is moved in the direction of the arrow in Fig. 6, and the coating process is performed. Returning to the process of step S1 of Fig. 7, after the substrate in the uncoated state is continuously transferred to each of the stages, the substrate is subjected to a coating process in accordance with the above-described flow. Further, in the above step S2 or step S5, when the substrate is not transported on the stage, the nozzle 51 is moved to the moisturizing portion 54 after the homogenization treatment, and the tip end of the nozzle 5 1 is placed in the undried state (step S7 of Fig. 7). ). As described above, the nozzle 51 has a directional direction of -20 - 6 1281704 (17) in the coating process, and therefore, the substrate G1, G2 is moved by the nozzle as shown in the drawing process. 8 6 Control the movement of the movement so that the nozzle 5 1 moves in the same direction on the substrate. According to the first embodiment, by the arrangement of the two platforms 50 and 59, the coating process of the substrate G placed on each platform can be effectively performed, that is, the other platform can be applied in one coating process. When moving out of the industry, it is easier to save the time required for the substrate to move in and out than the conventional single platform. Further, the nozzle standby portion 5 is disposed between the two platforms 50 and 59, and the substrate G placed on one of the stages is subjected to a coating process after the nozzle 51 is homogenized. Therefore, the substrate G placed on any of the stages can be coated with a uniform film thickness. Further, as compared with the two devices having the platform, the nozzle, and the nozzle standby portion shown in Fig. 14, the area can be reduced, and the device cost can be reduced. Further, according to the configuration of the above-described embodiment, even if one of the platform 50 or the flat-lure 59 is unable to perform the processing due to the failure of the substrate holding portions 50a and 59a, the operation of the flow independent of the flow shown in Fig. 7 is performed. The coating process of the other platform is feasible. That is, if the platform 50 side fails, the homogenization processing of the tip end of the nozzle 51 and the coating processing of the unprocessed substrate G2 of the stage 59 can be repeated in sequence. Further, when the stage 59 side occurs, the uniform processing of the tip end of the nozzle 51 and the coating process of the unprocessed substrate G1 on the stage can be repeatedly performed in sequence. Therefore, it is possible to avoid the interruption of the operation of the resist application coating processing apparatus 100 from the above-mentioned trouble. Moreover, the development processing device 1 is coated with the above-mentioned resist, and the barrier is applied to the column when the column is applied as a lifter. - 21 - (18) 1281704 For most (2) exposure devices 4a and 4b convey the vertical transfer units 42a and 42b of the substrate. Therefore, the retention of the substrate G of the coated film formation process before the exposure process can be effectively reduced by the two stages. Therefore, the work efficiency of the substrate processing of the resist application coating development processing apparatus (substrate processing system) in conjunction with the exposure apparatus can be further improved. Further, according to this configuration, each of the heat treatment units and the resist coating processing unit 23 is disposed around the vertical transfer unit (S / A) for transporting the substrate, and the substrate processing direction of the next project is arranged at a required position. A substrate rotating unit that rotates the substrate G in the horizontal direction. According to this, each processing unit can avoid the parallel trial production in one direction, and the miniaturization of the resist coating development processing apparatus can be achieved. Further, the configuration and operation control of the resist application device 23a described in the above embodiment are merely examples, and are not limited thereto. Fig. 8 - 10 shows a first modification of the resist application device of the substrate processing system of the present invention. Fig. 8 is a schematic side view showing a first modification of the resist application device. Fig. 9 is an explanatory view showing a coating process of a resist supply nozzle provided in the resist coating device of Fig. 8. Fig. 1 is an explanatory view showing a process of homogenizing a resist supply nozzle provided in the resist coating device of Fig. 8. As shown in Fig. 8, in the first modification, the nozzle 51 is controlled by the operation of the nozzle moving means 86, and the moving direction during the coating process can be changed to the side of the platform 50 or the side of the platform 59. Further, as shown in Fig. 9, at the front end portion of the nozzle 5, the holding discharge port 5 1 a forms a wide width at the same time as the opposite lower end surface 5 1 b. According to this, regardless of the direction in which the nozzle 22-(19) 1281704 51 is in the direction indicated by the arrow 'the surface of the lower end portion 5 b is pressed against the surface of the substrate by the resist liquid R" can be stabilized In addition, in the homogenization process of FIG. 1, the roller rotation control means 65 determines the rotation direction of the roller 5 2 according to the next coating process performed on either the platform 50 or the platform 59. That is, at the tip end of the nozzle 51, the discharge port 5 1 a is used as a boundary, and a plurality of resist liquids R are attached to the opposite side of the direction in which the nozzle φ of the next coating process is performed, and the rotation direction of the roller 5 2 is determined. Further, as shown in the figure, the holding nozzles 51 are disposed on the right and left sides of the roller 52, and the brush ejector 9 is provided, respectively, and the circumferential surface of the sliding roller 52 of any of the brushing devices 9 is controlled in accordance with the rotation direction of the roller 52. That is, any cylinder 90 is driven in accordance with the direction of rotation of the roller 52, and the lifting operation of the brusher 91 is controlled. In the first modification of the resist application device 23a, any one of the substrate G1 on which the stage 50 is placed or the substrate G2 on which the stage 59 is placed can move the nozzle 51 to the processed substrate direction immediately after the homogenization process. It can be directly processed by _ coating. That is, the movement of the nozzle 51 is not wasteful compared to the direction in which the nozzle 51 is oriented. Therefore, the work efficiency can be improved without increasing the arrangement space, and the nozzle 5 1 can be suppressed. The front end is dry. Next, a second modification of the resist application device 2 3 a will be described with reference to Fig. 1 . ® 1 1 is a schematic side view of a second modification of the resist application device 23a. As shown in Fig. 11, the stages 5〇 on which the substrates G1 and G2 are placed, respectively, are arranged side by side in the lateral direction of the platform 59, and the nozzle standby unit 5 5 is disposed adjacent to the platform 503-(20) 1281704 on the opposite side of the platform 59. (homogenization processing means). The masking device 2 3 a 'clearing nozzle 5 1 moved by the nozzle standby portion 5 5 first coats the substrate G1 on the processing platform 50, and then applies the substrate G2' on the processing platform 59 again. Returning to the nozzle standby unit 551 〇 According to the second modification of the resist application device 23a, the substrate G 1 and the substrate G2 placed on the stage 5〇 and the stage 5 9 can be continuously subjected to the coating process φ, which can increase the unit time. The number of processed pieces. However, in the second modification of the resist application device 2 3 a , after the coating treatment of the substrate G 1 , the resist liquid which is dried and solidified during the coating treatment adheres to the periphery of the slit-shaped discharge port. Therefore, when the coating treatment of the next substrate G2 is performed in this state, the discharge of the resist liquid at the discharge port is disturbed, and there is a problem that the substrate surface which is not uniform can be coated. Therefore, as an example of solving the above problem, a third modification of the resist application device 23a will be described with reference to Fig. 1 . Fig. 12 is a schematic side view showing a third modification of the resist coating device. As shown in Fig. 12, the roller 5 2 (the first homogenizing means) and the moisturizing portion 5 4 are disposed on the left side of the stage 50, and the roller 6 3 (the second uniformizing means) is disposed on the left side of the stage 59. That is, the roller 6 3 is disposed between the platform 50 and the platform 59. The moisturizing portion 54 may also be disposed adjacent to the roller 63. Further, the roller 52 and the moisturizing portion 54 are disposed on the right side of the stage 50, and the roller 63 may be disposed on the right side of the platform 59 (not shown). In this case, the moisturizing portion 54 can be disposed adjacent to the platform 59. Further, the roller 52 and the roller 63 rotate in the same direction. According to the above configuration, first, after the homogenization of the roller 52, the coating treatment of the substrate G1 of the platform-24-(21) 1281704 50 is performed, and then, after the homogenization treatment of the roller 63, the substrate G2 for the stage 59 is performed. Coating treatment. According to the third modification of the resist application device 2 3 a, any one of the substrate G1 and the substrate G2 placed on the stage 50 and the stage 59 can be homogenized before the coating process, and the second deformation can be solved. Example problem. Further, compared with the configuration of the resist application device 23a of Fig. 4, the area (arrangement space) and the device cost are increased, but the same as the resist application device shown in Fig. 8 of the first modification # example can be obtained. Work efficiency. Next, a second embodiment of a resist coating development processing apparatus as a substrate processing system of the present invention will be described with reference to Fig. 13. Fig. 13 is a plan view showing the overall configuration of a resist coating development processing apparatus according to a second embodiment. It is to be noted that the same reference numerals are attached to the same as those shown in Fig. 1, and the detailed description is omitted. The resist coating development processing apparatus 101 is provided with the cassette stage 1, the processing stage 2, and the interface stage 3 in the X-axis direction of the figure similarly to the resist coating development processing apparatus 100 of Fig. 1. φ is applied to the resist application processing apparatus 1 〇1, and the processing stage 2 has the parallel movement of the substrate G extending along the X-axis direction in the same manner as the resist application processing apparatus 100 of FIG. Columns are listed in columns a and B. Abrasion cleaning processing unit (SCR) 21, a first heat treatment unit section 26, a resist processing unit 23, and a second heat treatment unit section 27 are arranged along the transport column A from the cassette platform 1 side to the interface platform 3. A laser u V irradiation unit (e-UV) 22 is disposed on a portion of the wiping cleaning processing unit (S C R ) 2 1 . Further, along the transport column B, the development processing unit (DEV) 24, the i-line UV irradiation unit (i-UV) 25, and the first portion are disposed from the interface platform 3 side to the cassette platform 1 side -25-(22) 1281704. 3 heat treatment unit 28. The first heat treatment unit section 26 is composed of a plurality of heat treatment blocks in the same manner as in the first embodiment. However, in addition to the heat treatment blocks 26a and 26b, the first heat treatment unit section 26 is provided with a tunnel for transporting and naturally cooling the tunnel passage by roller conveyance or the like. Unit 26d. Further, cooling units 26e and 26f for cooling the substrate G to a specific temperature are provided. Further, φ is disposed between the wiping cleaning processing unit (SCR) 21 and the first heat treatment unit section 26, and rotates the substrate as a substrate rotating means by rotating the substrate G in the horizontal direction in accordance with the substrate processing direction of the next process. Unit (R Ο T ) 12. Further, the vertical transfer unit (S/A) 13 is provided between the heat treatment block 26a and the heat treatment block 26b as a means for transporting the substrate G rotated by the substrate rotation unit (ROT) 12 to the first heat treatment unit section 26. . The vertical transfer unit (S / A) 1 3 has a transfer arm (not shown) for transporting the substrate G in the same manner as the vertical transfer unit (S/A) 5 of the first embodiment. The transfer arm can be moved in the Χ, γ, and x-axis directions and can be rotated. The substrate G can be transported to the heat treatment blocks 26a and 26b by the vertical transfer unit (S/A) 13. Further, the cooling units 26e and 26f arranged in parallel with the Y-axis direction are provided adjacent to the vertical transport unit (S/A) 14. The vertical transfer unit (S/A) 14 and the vertical transfer unit (S/A) 13 are the same unit of the same configuration, but can move largely in the X-axis direction. The substrate G of the two cooling units 26e and 26f is transported by a transport unit. -26- 1281704 (23) As shown, the resist coating processing unit 23 is configured to surround the vertical unit (S/A) 15. That is, the resist coating processing unit 23 has a drug application device (CT) 23 3 a (resist coating device) and vacuum drying (VD) 23c, 23d adjacent to the vertical transfer unit (s/a), respectively, 15%. . The vertical transfer unit (S/A) 15 and the vertical transfer unit (A) 13 are the same unit of the same configuration, but may be larger than B in the γ-axis direction. Therefore, the substrate of each device of the resist application processing unit 23 The G transfer can be performed by a vertical transfer unit (S/A) 15. The resist application device (CT) 23a can be applied to the same configuration as the first embodiment (including the first to third modifications), and therefore the description thereof will be omitted. Further, the second heat treatment unit section 27 is composed of four heat treatment blocks 27a, 27c, and 27d arranged to surround the four sides of the vertical transfer unit (S/A) 16. The vertical transfer unit (S/A) 16 and the transport unit (S/A) 13 have the same configuration, and are transported to the substrates of the four hot blocks 27a, 27b, 27c, and 27d. Further, on the processing platform 2, vertical transport units (S/A) 17, 18 are provided in front of and behind the third heat unit 28 along the X-axis direction. The vertical units (S/A) 17, 18 have the same configuration as the vertical transfer unit (S/A) 1, and perform substrate G feeding to the heat treatment blocks 28a and 28b. Further, in the resist coating development processing apparatus 1 〇1, the interface platform 3 is provided by: the substrate G is matched with the substrate processing direction of the next project and is transported to the water resistance unit: S/move, and the form is sent in detail. The 27b vertical processing unit transports three types of substrates, which are square -27-(24) 1281704 rotating substrate rotation unit (ROT) l9a, 19b; and substrate G to two exposure devices 4a, 4b The interface unit 20 as a substrate transfer means and the external device block 45 are transported. The interface unit 20 and the vertical transfer unit (S/A) 13 have the same configuration and are movable in the Y-axis direction, and can be moved between the two exposure devices 4a and 4b. The following is a description of the process of the resist application coating development processing apparatus 10 of the above configuration. First, the substrate G in the cassette C disposed in the cassette platform 1 is carried into the processing platform 2 by the transport device 1 1 , and then the pre-wiping process and the wiping cleaning unit of the laser UV irradiation unit ( e-UV) 22 are performed ( SCR) 21 wipe cleaning treatment. After that, the substrate G is transferred to the substrate rotating unit 12, and after the substrate processing direction of the next process is rotated, the substrate G is carried into the heat-treated unit blocks 26a and 26b to which the first heat-treated single-section section 26 belongs. • A series of heat treatments (dehydration drying, hydrophobization, etc.). Thereafter, the substrate G transport tunnel unit 26d is naturally cooled, and the cooling units 26e and 26f are cooled to a specific temperature. Thereafter, the substrate G is carried into the resist coating processing unit 23 by the vertical transfer unit (S/A) 14, and a film forming process of the resist liquid is applied. In the resist coating processing unit 23, as described in the first embodiment, the resist liquid is applied to the substrate G in the resist coating device (CT) 23a, and then dried in a vacuum drying unit (VD) 23c. And 23d was subjected to vacuum drying treatment. Further, two decompression drying units (VD) (23c, 23d) and -28-1281704 (25) are provided. Therefore, in the resist application device 23a, it is effective for a plurality of substrates G coated with a resist. The decompression drying treatment is carried out in parallel to improve work efficiency. After the resist film formation process of the resist application processing unit 23, the substrate G is carried into the heat treatment unit blocks 27a, 27b, 27c, and 27d to which the second heat treatment unit section 27 belongs, and a series of heat treatments (pre-stage drying treatment, etc.) are performed. After 0, the substrate G is rotated in the horizontal direction by the substrate rotation unit (ROT) 19a, and then transferred to the exposure devices 4a and 4b by the interface unit 20. Further, the interface unit 20 and the vertical transfer unit (S/A) 13 are the same unit of the same configuration, but can move largely in the Y-axis direction. After the resist film is exposed to form a specific pattern in the exposure devices 4a and 4b, the substrate G is taken out by the interface unit 20, and the substrate rotation unit (ROT) 19b is rotated in the horizontal direction in accordance with the next project. Thereafter, the substrate G is transferred to the peripheral exposure device (EE) of the external device block φ 45 of the interface stage 3, and exposure for peripheral resist removal is performed. Thereafter, the marking device (TITLER) that is transported to the upper portion of the external device block 45 marks the specific information on the substrate G. Thereafter, the substrate G is again transported to the processing platform 2 by the roller transport mechanism. First, the substrate G is carried into the development processing unit (DEV) 24 to perform development processing. After completion of the development processing, the substrate G is carried into the i-line UV irradiation unit (i-UV) 25 by the development processing unit (DEV) 24, and the substrate G is subjected to decolorization processing. Thereafter, the substrate G is carried into the third heat treatment unit section 2, and a series of heat treatments (post-stage drying treatment, etc.) are performed in the heat -29-(26) 1281704 processing unit blocks 2 8 a, 2 8 b. Thereafter, the substrate G is cooled to a specific temperature, transported to the cassette platform 1 by the conveyor, and stored in the cassette C by the transport unit 11. According to the second embodiment described above, as shown in FIG. 13, the interface unit 20 that transports the substrate to the plurality of (two) exposure apparatuses 4a and 4b is provided. Therefore, by φ, the retention of the substrate G after the formation of the coating film can be effectively reduced by the two stages. Therefore, the substrate processing operation efficiency of the resist application coating developing device (substrate processing system) at the time of the interlocking with the exposure device can be further improved. According to this configuration, each of the heat treatment units and the resist coating processing unit 23 is disposed around the vertical transfer unit (S/A) for carrying the substrate transfer, and the substrate rotation unit is provided at a required position, so that the substrate processing direction of the next project can be matched. The substrate G is rotated in the horizontal direction. According to this, each processing unit can be prevented from juxtaposing in one direction, and the size of the resist coating development processing device can be reduced. In the first embodiment and the second embodiment, the resist film is applied to the LCD substrate. However, the present invention is not limited thereto, and can be applied to any of the processing liquid supplied to the substrate to be processed. Substrate processing system. The treatment liquid of the present invention may be, for example, a liquid such as an interlayer insulating material, a dielectric material or a wiring material, in addition to the resist liquid. Further, the substrate to be processed of the present invention is not limited to the LCD substrate, and may be a semiconductor wafer, a CD substrate, a glass substrate, a photomask, a printed substrate or the like. -30. (27) 1281704 (Industrial Applicability) The present invention is applicable to a substrate processing system for forming a film of a processing liquid on an LCD substrate or a semiconductor wafer, and is suitable for use in the semiconductor manufacturing industry and the electronic device manufacturing industry. Advantageous Effects of Invention According to the present invention, a substrate processing system for forming a film of a processing liquid on a surface of a substrate to be processed and forming a specific pattern on the substrate in conjunction with an exposure device can be obtained, and the processing liquid can be uniformly applied to each substrate. Improve the substrate processing efficiency when the exposure device is linked. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing the entire configuration of a resist coating application processing apparatus of a substrate processing system of the present invention. Fig. 2 is a perspective view showing a resist application device provided in the resist application coating processing apparatus of Fig. 1. Figure 3 is a side elevational view of the resist coating apparatus of Figure 2; Fig. 4 is an enlarged front sectional view showing the resist supply nozzle of the resist coating device of Fig. 2; Fig. 5 is an explanatory view showing a process for homogenizing a resist liquid in the vicinity of a discharge port of a resist supply nozzle provided in the resist coating device of Fig. 2. Fig. 6 is a schematic view showing the direction in which the resist supply nozzle of the resist application device of Fig. 2 is moved. -31 - (28) 1281704 Fig. 7 is a flow chart showing the operation control process of the resist supply nozzle provided in the resist coating device of Fig. 2. Fig. 8 is a schematic side view showing a first modification of the resist coating device provided in the resist coating and developing apparatus of Fig. 1. Fig. 9 is an explanatory view showing a coating process of a resist supply nozzle provided in the resist coating device of Fig. 8. Fig. 10 is an explanatory diagram of the homogenization processing of the resist supply nozzle provided in the resist coating device of Fig. 8. Fig. 11 is a schematic side view showing a second modification of the resist coating device provided in the resist coating development processing device of Fig. 1. Fig. 12 is a schematic side view showing a third modification of the resist coating device provided in the resist coating development processing device of Fig. 1. Fig. 13 is a plan view showing the entire configuration of a resist application coating development processing apparatus of a substrate processing system of the present invention. Fig. 14 is an operation diagram of a resist supply φ nozzle when two coating film forming apparatuses are provided. [Description of main component symbols] 23: Resist coating processing unit 23a: Resist coating device 50: Stage 5 1 : Nozzle 51a: Ejection port 5 1 b: Lower end surface - 32 - (29) (29) 1281704 5 1 c: inclined surface 52: homogenizing roller (first uniformizing means) 5 5 : nozzle standby unit (homogenization processing means) 59 : platform (second platform) 86 : nozzle moving means 63 : homogenizing roller (second uniform 65: Roller rotation control means 95: Resistant liquid supply source (treatment liquid supply means) 100: Resistivity coating development processing apparatus 1 〇1: Resistive coating development processing apparatus G: LCD substrate ( Processing substrate) G1 : LCD substrate (substrate to be processed) G2 : LCD substrate (substrate to be processed) R : Resistive liquid (treatment liquid)
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