1246715 (1) 玖、發明說明 【發明所屬之技術領域】 本發明是關於，在光平版印刷製程中，對被處理基板 塗佈光阻劑液用的光阻劑塗佈方法及裝置。 【先前技術】 傳統上，在LCD或半導體裝置的製造處理過程中的 光平版印刷製程，爲了要在被處理基板（玻璃基板、半導 體晶圓等）塗佈光阻劑液，常是使用所謂旋轉塗佈法（參 照’例如，專利文獻1 )。但是，旋轉塗佈法卻存在有， 因爲需要以相當高的速度旋轉被處理基板，因此有相當大 量的光阻劑液會因離心力飛散到基板外，被浪費掉或成爲 產生顆粒的原因等問題。尤其是，基板愈大型化，上述問 題會更加顯著，不僅如此，基板旋轉時，因爲基板外周部 的周速度很大會引起空氣的亂流，會有容易招致光阻劑膜 的膜厚度變動的問題。 因爲這個原因，最近相當普及的一種對基板的大型化 有利的光阻劑塗佈法是，令光阻劑噴嘴在基板上方相對移 動或掃描，同時以細徑連續噴出光阻劑液，藉此可以不需 高速旋轉便能夠在基板上以所希望的膜厚度塗佈光阻劑液 的技術方法（非旋轉法）（參照，例如，專利文獻2及專 利文獻3 )。 【專利文獻1】 日本特開平8-255745號公報（第4-6頁，第2 1246715 (3) 佈裝置。 爲了達成上述目的，本發明的光阻劑塗佈方法，是在 •光平版印刷製程，將光阻劑液塗佈在被處理基板上的光阻 劑塗佈方法，具有：在上述基板上，設定實質上分開獨立 的複數個塗佈領域的製程；對上述基板，限定上述塗佈領 域塗佈光阻劑液的製程。 同時，本發明的光阻劑塗佈裝置具備有：由分開一定 間隔配置，能夠分別獨立控制光阻劑液吐出動作的複數個 噴嘴部，所構成的光阻劑噴嘴頭；令上述光組劑噴嘴頭， 對著處理基板相對掃描移動的掃描手段；在上述基板上， 設定實質上分開獨立的複數個塗佈領域的塗佈領域設定手 段；控制上述光阻劑噴嘴頭的上述噴嘴部的光阻劑液吐出 動作，對上述基板，限定在上述塗佈領域塗佈光阻劑液的 光阻劑液吐出控制手段。 依據本發明時，因爲是僅在基板上的被處理面中的分 散的塗佈領域塗佈光阻劑液，其他領域並不塗佈光阻劑液 ，因此在塗佈後，例如在乾燥處理中，基板上的光阻劑液 晃動’也只是限定在塗佈領域內，因此不會發展到整體性 的移動，可以保持光阻劑液的一定的膜厚度。同時，因爲 不是塗佈在基板上的整面，而是限定在需要部位（塗佈領 域）’或以分散方式塗佈光阻劑液，因此可以減少光阻劑 液的消耗量，而且可以縮短乾燥時所需要的時間。 本發明方法爲了降低塗佈領域內的塗佈不均，最好是 ’在上述塗佈領域內，以大致上一定的膜厚度覆蓋整個領 -6- 1246715 (4) 域狀塗佈上述光阻劑液。最好是，掃描手段可以具有：令 上述光阻劑噴嘴頭對上述基板向垂直於上述噴嘴部的第1 方向相對移動的第1-掃描部；及令上述光阻劑噴嘴頭對上 述基板向平行於上述噴嘴部的排列方向的第2方向相對移 動的第2掃描部。同時，爲了進一步縮短塗佈後的乾燥時 間，最好是具備有，將塗佈在上述基板上的光阻劑液，在 塗佈後立即加熱使其乾燥的乾燥手段，並藉由上述掃描手 段使上述乾燥手段與上述光阻劑噴嘴頭一起掃描移動。 本發明的一個形態是，基板是平面面板顯示器用的劃 分多片型的母基板時，可以在上述塗佈領域設定製程，對 應上述基板上的各面板領域設定上述塗佈領域。 本發明的另一個形態是，基板是每一像素均具有薄膜 電晶體（TFT )的TFT液晶顯示器用的基板時，可以在上 述塗佈領域設定製程，對應上述基板上的各TFT領域設 定上述塗佈領域。 同時，基板是每一像素均具有紅色、綠色或藍色的著 色層的彩色濾光器用的基板時，可以在上述塗佈領域設定 製程，對應上述基板上的各像素領域設定上述塗佈領域。 【實施方式】 茲參照附圖，說明本發明的可取實施形態如下。 第1圖是表示適合使用本發明塗佈方法及塗佈裝置的 一構成例子的塗佈顯像處理系統。此塗佈顯像處·理系統 10是設置在無塵室內，而，例如，以LCD用的玻璃基板 1246715 (5) 作爲被處理基板，在 LCD製造過程中進行光平版印刷 程中的洗淨、塗佈光阻劑、預烘烤、顯像及後烘烤等的 項處理。曝光處理是在設置於鄰近此系統外部的曝光裝 1 2進行。 此塗佈顯像處理系統1 0是在中心部配置橫方向較 的處理站（P/S) 16，在其長度方向（X方向）兩端部 置卡匣站（C/S) 14及介面站（I/F) 18。 卡匣站（C / S ) 1 4是系統1 0的卡匣運進運出埠， 有：可以載置水平方向例如 Y方向並排，收容複數片 疊多層的基板G的卡匣C的卡匣台20;及對卡匣台20 的卡匣C放進及取出基板G的運送機構22。運送機構 有可以保持基板G的手段，例如運送臂22a，能夠以X T、Z、Θ的4軸動作，可以與相鄰接的處理站（P/S ) 交接基板G。 處理站（P / S ) 1 6是依處理流程之順序將各處理 配置在系統長度方向（X方向）延伸的平行且逆向的一 線A、B。詳述之，在從卡匣站（C / S ) 1 4側朝向介面 (1/ F ) 1 8的上游部的處理線A，成橫方向一列配置洗 處理部24、第1熱處理部26、塗佈處理部28、及第2 處理部3 0。另一方面，從介面站（1/ F ) 1 8側朝向卡 站（C / S ) 1 4側的下游部的處理線B，成橫方向一列 置第2熱處理部3 0、顯像處理部3 2、脫色處理部3 4、 第3熱處理部3 6。這種處理線形態是第2熱處理部3 0 於上游側的處理線A的最後尾，同時’位於下游側的 製 各 置 長 配 備 重 上 22 16 部 對 站 淨 熱 匣 配 及 位 處 1246715 (6) 理線B的前頭位置，跨越在兩線A、B間。 1片 機構 洗淨 的卡 單元 可以 基板 理面 ，沿 前後 上游 交接 DHP 元（ 基板 下依 卻單 接單 G的 兩處理線‘ A、B間設有補助運送空間3 8，能夠以 單位水平載置基板G的運送梭40 ’由未圖示的驅動 使其在處理線方向（X方向）雙方向移動。 在上游部的處理線A，洗淨處理部24含有淸除 單元（SCR) 42，在跟此淸除洗淨單元（SCR) 42內 匣站（C / S ) 1 4相鄰接的部位，配置激元u v照射 (e - UV) 41。淸除洗淨單元（SCR) 42內的洗淨部 藉由輕子運送或皮帶運送方式，以水平姿勢將LCD G運送向處理線A方向，同時對基板〇上面（被處 )施加刷洗或沖洗。 在鄰接洗淨處理部2 4下游側的第1熱處理部2 6 著處理線A在中心部設有縱型的運送機構4 6，在其 兩側多層堆積配置複數個單元。例如第2圖所示，在 側的多層單元部（TB ) 44，從下依序堆疊有：基板 用的交接單元（PASS ) 50 ;脫水烘烤用的加熱單元（ )52、54;及黏著單元（AD) 56。在此，交接單 PASS ) 50是用以跟淸除洗淨單元（SCR ) 42側進行 G的交接。同時，下游側的多層單元部（TB ) 4 8從 序堆疊有：基板交接用的交接單元（PASS ) 60 ;冷 元（CL) 62、64;及黏著單元（AD) 66。在此，交 元（PASS ) 60是用以跟塗佈處理部28側進行基板 交接。 . 如第2圖所示，運送機構46具有：可以沿著垂直方 1246715 (7) 向延伸的導軌6 8昇降移動的昇降運送體，7Ό ·;可在此昇降 運送體7 0上向Θ方向轉動的可旋轉的旋轉運送體72 ;以 及可在此旋轉運送體72上支持'基板G而向前後方向進退 或伸縮的運送臂或夾鉗74。使昇降運送體70昇降的驅動 部7 6設在垂直導軌6 8的基端側，驅動旋轉運送體7 2的 驅動部7 8裝設在昇降運送體7 0，驅動運送臂7 4的驅動 部80則裝設在旋轉運送體72。各驅動部76、78、80可 以用，例如電氣馬達等構成。 如上述方式構成的運送機構46可以高速昇降乃至旋 轉運動，而進接到雨邊相鄰接的多層單元部（ΤΒ ) 44、 48中的任意單元，配合補助運送空間38的運送梭40交 接基板G。 鄰接第1熱處理部2 6下游側的塗佈處理部2 8是如第 1圖所示，將抗蝕劑塗佈單元8 2、減壓乾燥單元（V D ) 8 4、邊緣去除單元（E R ) 8 6沿處理線Α配置成一列。雖 未圖示，但塗佈處理部2 8內設有，可以在此等3個單元 (CT)82、（VD)84、（ER) 86依製程一次一片順序運 進運出基板G的運送裝置，各單元（CT) 82、（VD) 84 、（ER ) 8 6內則能夠以一片基板單位進行各項處理。 鄰接塗佈處理部28下游側的第2熱處理部3 0具有跟 上述第1熱處理部2 6相同的架構，在兩處理線A、B間 設縱型的運送機構90，在處理線A側（最尾端）設一方 的多層單元部（TB ) 8 8，在處理線B側（前端）設另一 方的多層單元部（TB ) 92。 -10- 1246715 (8) 雖未圖示，但例如，處理線A的多層單元部（TB ) 8 8可以在‘最下層置有交接、基板用的交接單元（P A S S ) ’ 在其上，/例如成3層方式堆疊預烘烤用的加熱單元（ PREBAKE )。同時，處理線B的多層單元部（TB ) 92可 以在最下層置有交接單元（PASS ) ’在其上，例如成1 層方式堆疊冷卻單元（COL)，在其上，例如成2層方式 堆疊預烘烤用的加熱單元（PREBAKE )。 第2熱處理部30的運送機構90，不僅可以經由兩多 層單元部（TB) 88、92的各該交接單元（PASS)，與塗 佈處理部2 8及顯像處理部3 2以1片單位交接基板G ’同 時，也可以與補助運送空間3 8內的運送梭4 0或後述的介 面站（1/ F ) 1 8，以1片單位交接基板G。 在下游部的處理線B，顯像處理部3 2含有，以水平 姿勢運送基板G，同時進行一連串的顯像處理製程，所謂 水平流動方式的顯像單元（DEV) 94。 在顯像處理部3 2的下游側，夾著脫色處理部3 4配置 第3熱處理部3 6。脫色處理部3 4備有’對基板G的被處 理面照射i線（波長3 6 5 nm )進行脫色處理的i線U V照 射單元（i-UV) 96。 第3熱處理部36具有跟上述第1熱處理部26或第2 熱處理部3 0同樣的架構，沿處理線B設有運送機構1 〇 〇 ，與其前後兩側的一對多層單元部（TB ) 98、102。 雖未圖示，但例如，在上游側的多層單元部（τ B ) 98，可以在最下層置有交接基板用的交接單元（PASS) -11 - 1246715 (9) ，在其上，例如成3層方式堆疊後烘烤用的加熱單元（ POBAKE )。同時，在下游側的多層單元部“ TB ) 102 ’ 可以在最下層置有後烘烤用的加熱單元（POBAKE ) ’在 其上，例如成1層方式堆疊交接及冷卻用的交接·冷卻單 元（PASS.COL)，在其上，例如成2層方式堆疊後烘烤 用的加熱單元（POBAKE )。 第3熱處理部3 6的運送機構1 0 0，不僅可以經由兩 多層單元部（TB ) 98、102的交接單元（PASS )及交接 •冷卻單元（P A S S · C Ο L )，分別與i線UV照射單元9 6 及卡匣站（C / S ) 14以1片單位交接基板G，同時，也 可以與補助運送空間3 8內的運送梭40以1片單位交接基 板G 〇 介面站（I/F) 18具有可跟鄰接的曝光裝置12交接 基板 G的運送裝置 104，在其周圍配置緩衝台（BUF ) 1〇6、擴充冷卻台（EXT、COL ) 108及周邊裝置1 10。緩 衝台（BUF) 106置有定置型的緩衝卡匣（未圖示），擴 充冷卻台（EXT、COL ) 108是備有冷卻功能的交接基板 用的台子，與處理站（P/ S ) 1 6交接基板G時的使用。 周邊裝置1 1 〇可以是，例如，將標題機（TIT L E R )與周 邊曝光裝置（EE)上下重疊而成的架構。運送裝置1〇4 具有可以保持基板G的手段，例如運送臂1 〇4a，可以與 鄰接的曝光裝置12或各單元（BUF) 106、（EXT、COL )108、（ TITLE R/ EE) 110 交接基板 G。 第3圖表示此塗佈顯像處理系統的處理程序。首先， -12- 1246715 (10) 在卡匣站（C/S) 14，運送機構22從卡匣台20上的規 定的卡匣C中取出1·片基板G，運進處理站，（p / s ) 1 6 的洗淨處理部24的激元UV照射單元（e — uv ) 41 (步驟 S 1 ) 〇 基板G在激兀U V照射單兀（e - U V ) 4 1內受到紫外 線照射的乾式洗淨（步驟S 2 )。在此紫外線洗淨過程主 要是去除基板表面的有機物。結束紫外線洗淨後，基板G 則由卡匣站（C / S ) 1 4的運送機構2 2移送到洗淨處理部 24的淸除洗淨單元（SCR) 42。 在淸除洗淨單元（SCR ) 42，如上述，藉由輥子運送 或皮帶運送方式以水平姿勢將基板G運送向處理線A方 向，同時，對基板G上面（被處理面）施加刷洗或沖洗 ，藉此從基板表面去除粒子狀的污染（步驟S 3 )。而在 洗淨後仍是以水平姿勢運送基板，同時施以淋洗處理，最 後使用空氣刀等令基板G乾燥。 在淸.除洗淨單元（SCR) 42內完成洗淨處理的基板G 則被運進第1熱處理部26的上游側多層單元部（TB ) 44 內的交接單元（PASS ) 50。 在第1熱處理部26，基板G將由運送機構46以規定 的程序送給規定的單元。例如，基板G將最先從交接單 元（PASS ) 50移至加熱單元（DHP ) 52、54之一 ’在此 接受脫水處理（步驟S 4 )。然後，基板G被移至冷卻單 元（CL ) 62、64之一，在此被冷卻到一定的基板溫度（ 步驟S 5)。然後，基板G被移至黏著單元（AD) 56 ’在 -13- 1246715 (11) 此接受疏水化處理（步驟S 6 )。結束此疏水化處理後， 基板G在冷卻單元（CL ) 62、64之一冷卻到一定的基板 溫度（步驟S 7 )。最後，基板G被移至屬於下游側多層 單元部（TB) 48的交接單元（PASS) 60。 如此，在第1熱處理部2 6內，基板G可以經由運送 機構46在上游側的多層單元部（TB ) 44與下游側多層單 元部（TB) 48之間任意來回。再者，第2及第3熱處理 部3 0、3 6也可以同樣進行基板運送動作。 在第1熱處理部26接受上述一連串的熱處理的基板 G，則從下游側多層單元部（TB ) 4 8內的交接單元（ PASS ) 6 0移到下游側鄰的塗佈處理部2 8的光阻劑塗佈單 元（CT ) 82。 基板G在光阻劑塗佈單元（CT ) 82藉由例如非旋轉 法在基板上面（被處理面）塗佈光阻劑，之後在鄰接下游 側的減壓乾燥單元（VD ) 84接受減壓的乾燥處理，接著 ，在鄰接下游側的邊緣去除單元（ER ) 8 6去除基板周緣 部的多餘的（不需要的）光阻劑（步驟S 8 ) 。 · 接受到上述光阻劑塗佈處理的基板G從邊緣去除單 元（ER ) 86交接到相鄰的屬於第2熱處理部30的上游側 多層單元部（TB ) 88的交接單元（PASS )。 在第2熱處理部30內，基板G則藉由運送機構90 以規定的程序在規定的單元間移動。例如，基板G將最 先從該交接單元（PASS)移至加熱單元（PREBAKE)之 一，在此接受塗佈光阻劑後的烘烤（步驟S 9 )。接著， -14- 1246715 (12) 基板G被移至冷卻單元（c 0 L )之一，在此被冷卻到一定 的溫度（步驟S 1 〇 )。然後，基板G則經由下游側多層 單元部（TB ) 92側的交接單元（PASS )'，或不經由交接 單元（P A S S ) ’而交給介面站（〗/ F )丨8側的擴充冷卻 級（EXT、COL ) 1〇8。 在介面站（1/ F ) 18，基板G則從擴充冷卻級（EXT 、COL) 1〇8運進周邊裝置110的周邊曝光裝置（EE)， 在此接受顯像時要去除附著在基板G周邊部的光阻劑用 的曝光後，送到下一個曝光裝置1 2 (步驟S 1 1 )。 曝光裝置1 2在基板G上的光阻劑施加規定電路圖案 的曝光。而，圖案曝光後的基板G則從曝光裝置1 2送回 介面站（I/F)18(步驟S11)，而運進周邊裝置11〇的 標題機（TITLER )，在此，於基板上規定部位標記規定 的資訊（步驟S 1 2 )。然後，基板G則送回擴充冷卻級 (EXT > COL ) 108。在介面站（I/F) 18的基板G的運 送及與曝光裝置12間的基板G的送受是由運送裝置1〇4 爲之。 在處理站（P / S ) 1 6，於第2熱處理部3 0由運送機 構90從擴充冷卻級（EXT、COL ) 108接受基板G，經由 處理線B的多層單元部（TB ) 92內的交接單元（PASS ) 交給顯像處理部3 2。 在顯像處理部32，將從該多層單元部（TB ) 92內的 交接單元（PASS )接受到的基板G運進顯像單元（DEV )94。在顯像單元（DEV ) 94，基板G向處理線B的下 -15- 1246715 (13) 游以水平流動方式運送，在其運送中進行一連串的顯像、 淋洗、乾燥等顯像處理過程（步驟s 13 )。 在顯像處理部3 2接受顯像處理的基板G被運進鄰接 下游側的脫色處理部3 4，在此接受照射i線的脫色處理（ 步驟S 14 )。結束脫色處理的基板G則移交給第3熱處 理部3 6的上游側多層單元部（TB ) 9 8內的交接單元（ PASS)。 在第3熱處理部36，基板G最先從交接單元（PASS )移至加熱單元（POBAKE )之一，在此接受後烘烤（步 驟S 1 5 )。接著，基板G被移至下游側多層單元部（TB )102內的交接·冷卻單元（PASS.COL)，在此被冷卻 到規定的基板溫度（步驟S 1 6 )。第3熱處理部3 6的基 板G的運送是由運送機構100爲之。 在卡匣站（C/ S ) 14側，運送機構22從第3熱處理 部36的交接·冷卻單元（PASS · COL )取得完成塗佈顯 像處理的全製程的基板G，將基板G收容在任一卡匣C ( 步驟S 1 )。 在此塗佈顯像處理系統1 0，可以將本發明應用在塗 佈處理部28的光阻劑塗佈單元（CT) 82。以下，參照第 4圖〜第1 9圖說明將本發明應用在光阻劑塗佈單元（ CT) 82的一實施形態。 在第4圖及第5圖表示塗佈處理部2 8的光阻劑塗佈 單元（CT) 82、減壓乾燥單元（VD) 84、及邊緣去除單 元（ER ) 86的主要部分。 -16- 1246715 (14)1246715 (1) Technical Field of the Invention The present invention relates to a photoresist coating method and apparatus for applying a photoresist liquid to a substrate to be processed in a photolithography process. [Prior Art] Conventionally, in a photolithography process during the manufacturing process of an LCD or a semiconductor device, in order to apply a photoresist liquid to a substrate to be processed (a glass substrate, a semiconductor wafer, etc.), a so-called rotation is often used. Coating method (refer to 'for example, Patent Document 1). However, the spin coating method exists because the substrate to be processed needs to be rotated at a relatively high speed, so that a considerable amount of the photoresist liquid is scattered to the outside of the substrate due to centrifugal force, wasted or becomes a cause of particles. . In particular, the larger the size of the substrate, the more the above-mentioned problems become more conspicuous. Moreover, when the substrate is rotated, the peripheral speed of the outer peripheral portion of the substrate causes a large amount of air turbulence, which may cause a problem that the film thickness of the photoresist film is fluctuated. . For this reason, a recently popular photoresist coating method which is advantageous for the enlargement of a substrate is to cause the photoresist nozzle to relatively move or scan over the substrate while continuously ejecting the photoresist liquid with a small diameter. A technical method (non-rotation method) in which a photoresist liquid can be applied to a substrate at a desired film thickness without requiring high-speed rotation (see, for example, Patent Document 2 and Patent Document 3). [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 8-255745 (pp. 4-6, No. 2 1246715 (3) Cloth device. In order to achieve the above object, the photoresist coating method of the present invention is in lithography A photoresist coating method for applying a photoresist liquid onto a substrate to be processed, comprising: a process of setting a plurality of coating fields substantially independent of each other on the substrate; and limiting the coating to the substrate The photoresist coating apparatus of the present invention is provided with a plurality of nozzle portions which are disposed at predetermined intervals and are capable of independently controlling the discharge of the photoresist liquid. a photoresist nozzle head; a scanning means for moving the processing target substrate against the scanning movement; and a coating area setting means for substantially separating the plurality of coating fields from the substrate; The photoresist liquid discharge operation of the nozzle portion of the photoresist nozzle head is limited to the photoresist liquid discharge control means for applying the photoresist liquid to the coating region. In the case of the invention, since the photoresist liquid is applied only to the dispersed coating field in the surface to be processed on the substrate, the photoresist liquid is not applied in other fields, and therefore, after coating, for example, in a drying process, The photoresist liquid sloshing on the substrate is also limited to the coating field, so that it does not develop an integral movement, and can maintain a certain film thickness of the photoresist liquid. At the same time, because it is not coated on the substrate. The entire surface is limited to the desired portion (coating area)' or the photoresist liquid is applied in a dispersed manner, so that the consumption of the photoresist liquid can be reduced, and the time required for drying can be shortened. In order to reduce the coating unevenness in the coating field, it is preferable to apply the above-mentioned photoresist liquid in a domain-like manner in the above-mentioned coating field by covering the entire collar -6-1246715 (4) with a substantially constant film thickness. Preferably, the scanning means may include: a first scanning portion for causing the photoresist nozzle head to relatively move the substrate in a first direction perpendicular to the nozzle portion; and causing the photoresist nozzle head to face the substrate Parallel to the above The second scanning unit that moves in the second direction in the direction in which the mouths are arranged in the second direction. In order to further shorten the drying time after coating, it is preferable to provide the photoresist liquid applied on the substrate. The drying means is heated and dried immediately after the cloth, and the drying means is scanned and moved together with the photoresist nozzle head by the scanning means. In one embodiment of the present invention, the substrate is a divided multi-plate type for a flat panel display. In the case of the mother substrate, the process can be set in the above-mentioned coating field, and the above-mentioned coating field can be set corresponding to each panel field on the substrate. In another aspect of the invention, the substrate has a thin film transistor (TFT) for each pixel. In the case of a substrate for a TFT liquid crystal display, a process can be set in the above-mentioned coating field, and the above-mentioned coating field can be set corresponding to each TFT field on the substrate. Meanwhile, the substrate has a coloring layer of red, green or blue for each pixel. In the case of a substrate for a color filter, a process can be set in the above-mentioned coating field, and the above coating can be set corresponding to each pixel field on the substrate. Field. [Embodiment] A preferred embodiment of the present invention will be described below with reference to the accompanying drawings. Fig. 1 is a view showing a coating development processing system which is suitable for use as a configuration example of the coating method and coating apparatus of the present invention. The coating development system 10 is disposed in a clean room, and, for example, a glass substrate 1246715 (5) for LCD is used as a substrate to be processed, and is cleaned in a light lithography process during LCD manufacturing. , treatment of photoresist, pre-baking, development and post-baking. The exposure process is performed in an exposure apparatus 1 2 disposed adjacent to the outside of the system. The coating development processing system 10 is a processing station (P/S) 16 in which a horizontal direction is disposed at a center portion, and a card station (C/S) 14 and an interface are disposed at both ends in the longitudinal direction (X direction). Station (I/F) 18. The cassette station (C / S) 1 4 is a cassette of the system 10, which is transported in and out of the cassette, and has a card cassette C which can be placed side by side in the horizontal direction, for example, the Y direction, and accommodates a plurality of stacked substrates G. The table 20; and the transport mechanism 22 for loading and unloading the substrate G to the cassette C of the cassette 20. The transport mechanism has means for holding the substrate G, for example, the transport arm 22a, and can operate on four axes of X T, Z, and ,, and can transfer the substrate G to an adjacent processing station (P/S). The processing station (P / S) 16 is a parallel and reversed line A, B in which the respective processes are arranged in the system length direction (X direction) in the order of the processing flow. Specifically, in the processing line A from the cassette station (C / S) 14 side toward the upstream portion of the interface (1/F) 18, the processing unit 24 and the first heat treatment unit 26 are arranged in a row in the lateral direction. The coating processing unit 28 and the second processing unit 30 are provided. On the other hand, from the interface station (1/F) 18 side toward the processing line B on the downstream side of the card station (C / S) 14 side, the second heat treatment unit 30 and the development processing unit are arranged in the horizontal direction. 3, the decoloring treatment unit 34, and the third heat treatment unit 36. This processing line form is the last end of the processing line A on the upstream side of the second heat treatment unit 30, and at the same time, the "position on the downstream side is equipped with a weight of 22 16 parts, and the station is located at the station and the position is 1246715 ( 6) The front position of the cable B is spanned between the two lines A and B. The card unit that is cleaned by one mechanism can be used as the substrate surface, and the DHP element can be transferred along the front and the back (the two processing lines under the substrate but single G is provided). A and B are provided with a supplementary transport space 3, which can be carried at a unit level. The transport shuttle 40' of the substrate G is moved in both directions in the processing line direction (X direction) by driving (not shown). In the upstream processing line A, the cleaning processing unit 24 includes a erasing unit (SCR) 42, In the area where the cleaning station (SCR) 42 is connected to the station (C / S) 1 4, the excimer UV irradiation (e - UV) 41 is arranged. The cleaning unit (SCR) 42 is removed. The cleaning unit transports the LCD G to the processing line A in a horizontal position by a lepton transport or a belt transport method, and applies a brushing or rinsing to the upper surface of the substrate (where it is placed). The first heat treatment unit 2 on the side of the treatment line A is provided with a vertical transport mechanism 4 6 at the center portion, and a plurality of units are stacked on both sides. For example, as shown in Fig. 2, the multi-layer unit on the side ( TB) 44, stacked in order from the bottom: the transfer unit for the substrate (PASS) 50; dehydration The grilling heating unit () 52, 54; and adhesion unit (AD) 56. Here, EIR PASS) 50 is for performing handover Qing G 42 side with the addition of cleaning means (SCR). At the same time, the multi-layer unit portion (TB) 4 8 on the downstream side is sequentially stacked with a transfer unit (PASS) 60 for substrate transfer, cold elements (CL) 62, 64, and an adhesive unit (AD) 66. Here, the PASS 60 is used to transfer the substrate to the side of the coating processing unit 28. As shown in Fig. 2, the transport mechanism 46 has an elevating transport body that can be moved up and down along a vertical rail 126815 (7), and can be moved upwards and downwards on the elevating transport body 70. A rotating rotatable rotating transport body 72; and a transport arm or clamp 74 that can support the 'substrate G' on the rotating transport body 72 to advance or retreat or retract in the forward and backward directions. The drive unit 76 for raising and lowering the elevating transport body 70 is provided on the proximal end side of the vertical rail 68, and the drive unit 78 for driving the rotary transport body 7 2 is mounted on the elevating transport body 70, and drives the drive unit of the transport arm 74. 80 is mounted on the rotating transport body 72. Each of the driving portions 76, 78, 80 can be constituted by, for example, an electric motor or the like. The transport mechanism 46 configured as described above can be moved up and down or even rotated in a high speed, and is connected to any one of the multi-layer unit portions (44) 48 adjacent to the rain side, and the transport shuttle 40 of the auxiliary transport space 38 is transferred to the substrate. G. The coating processing unit 28 adjacent to the downstream side of the first heat treatment unit 26 is a resist coating unit 8 and a vacuum drying unit (VD) 8 4 and an edge removing unit (ER) as shown in Fig. 1 . 8 6 is arranged in a column along the processing line. Although not shown, the coating processing unit 28 is provided, and the three units (CT) 82, (VD) 84, and (ER) 86 can be transported one by one in the order of transporting the substrate G. In the device, each unit (CT) 82, (VD) 84, and (ER) 8 6 can perform various processes in one substrate unit. The second heat treatment unit 30 on the downstream side of the coating treatment unit 28 has the same structure as the first heat treatment unit 26, and a vertical conveyance mechanism 90 is provided between the two treatment lines A and B, on the processing line A side ( The multi-layer unit portion (TB) 8 of one end is provided with the other multi-layer unit portion (TB) 92 on the processing line B side (front end). -10- 1246715 (8) Although not shown, for example, the multilayer unit portion (TB) 8 8 of the processing line A may have a transfer unit (PASS) for the transfer and substrate on the lowermost layer. For example, a heating unit (PreBAKE) for prebaking is stacked in a three-layer manner. Meanwhile, the multi-layer unit portion (TB) 92 of the processing line B may have a transfer unit (PASS) disposed on the lowermost layer, on which, for example, a cooling unit (COL) is stacked in a layered manner, on which, for example, a two-layer manner A preheating heating unit (PREBAKE) is stacked. The transport mechanism 90 of the second heat treatment unit 30 can pass through the transfer unit (PASS) of the two multi-layer unit portions (TB) 88 and 92, and the coating processing unit 28 and the development processing unit 32 in one unit. At the same time as the transfer of the substrate G', the substrate G may be transferred in one unit to the transport shuttle 40 in the auxiliary transport space 38 or the interface station (1/F) 18 to be described later. In the processing line B of the downstream portion, the development processing unit 32 includes a so-called horizontal flow type development unit (DEV) 94 that transports the substrate G in a horizontal posture while performing a series of development processing processes. On the downstream side of the development processing unit 32, the third heat treatment unit 36 is disposed with the decoloring treatment unit 34 interposed therebetween. The decoloring processing unit 3 4 is provided with an i-line U V irradiation unit (i-UV) 96 that performs a decoloring treatment on the surface of the substrate G by irradiation of an i-line (wavelength 3 6 5 nm). The third heat treatment unit 36 has the same structure as the first heat treatment unit 26 or the second heat treatment unit 30, and the transport mechanism 1 is provided along the processing line B, and a pair of multilayer unit portions (TB) 98 on the front and rear sides thereof. 102. Although not shown, for example, in the multilayer unit portion (τ B ) 98 on the upstream side, a delivery unit (PASS) -11 - 1246715 (9) for the transfer substrate may be placed on the lowermost layer, for example, A heating unit (POBAKE) for post-baking in a 3-layer manner. At the same time, the multi-layer unit portion "TB" 102' on the downstream side may be provided with a heating unit (POBAKE) for post-baking on the lowermost layer, for example, a transfer/cooling unit for stacking and cooling in one layer. (PASS.COL), for example, a heating unit (POBAKE) for post-baking in a two-layer manner. The transport mechanism 100 of the third heat treatment unit 36 can pass not only the two-layer unit (TB) The transfer unit (PASS) of 98, 102 and the transfer/cooling unit (PASS · C Ο L ) respectively transfer the substrate G to the i-line UV irradiation unit 96 and the cassette station (C / S) 14 in one unit, and simultaneously It is also possible to transfer the substrate G in one unit to the transport shuttle 40 in the auxiliary transport space 38. The interface station (I/F) 18 has a transport device 104 that can transfer the substrate G to the adjacent exposure device 12, and is disposed around the transport device 104. Buffer station (BUF) 1〇6, expansion cooling station (EXT, COL) 108 and peripheral device 1 10. Buffer station (BUF) 106 is provided with a fixed type of buffer card (not shown), and expands the cooling stage (EXT, COL ) 108 is a table for the transfer substrate with cooling function, and the processing station (P/S) 1 6 Use when transferring the substrate G. The peripheral device 1 1 can be, for example, a structure in which a title machine (TIT LER ) and a peripheral exposure device (EE) are stacked one on top of the other. There is a means for holding the substrate G, for example, the transport arm 1 〇 4a, and the substrate G can be transferred to the adjacent exposure device 12 or each unit (BUF) 106, (EXT, COL) 108, (TITLE R/EE) 110. The figure shows the processing procedure of the coating development processing system. First, -12-1246715 (10) At the cassette station (C/S) 14, the transport mechanism 22 is taken out from the predetermined cassette C on the cassette stage 20. 1. The substrate G is transported into the processing station, and the excimer UV irradiation unit (e - uv ) 41 of the cleaning processing unit 24 of (p / s ) 16 (step S 1 ) 〇 the substrate G is excited by the UV irradiation sheet兀(e - UV ) 4 1 is dry-washed by ultraviolet irradiation (step S 2 ). In this ultraviolet cleaning process, the organic matter on the surface of the substrate is mainly removed. After the ultraviolet cleaning is completed, the substrate G is stopped by the card ( The transport mechanism 22 of the C / S ) 14 is transferred to the cleaning unit (SCR) 42 of the cleaning processing unit 24. The cleaning order is removed. (SCR) 42, as described above, the substrate G is transported in the horizontal posture to the direction of the processing line A by roller transport or belt transport, while the upper surface (treated surface) of the substrate G is brushed or rinsed, thereby from the surface of the substrate The particulate contamination is removed (step S3). On the other hand, after the washing, the substrate is transported in a horizontal posture, and the rinsing treatment is applied, and finally the substrate G is dried using an air knife or the like. The substrate G which has been subjected to the cleaning process in the cleaning unit (SCR) 42 is carried into the delivery unit (PASS) 50 in the upstream multi-layer unit (TB) 44 of the first heat treatment unit 26. In the first heat treatment unit 26, the substrate G is sent to a predetermined unit by the transport mechanism 46 in a predetermined program. For example, the substrate G will be first transferred from the transfer unit (PASS) 50 to one of the heating units (DHP) 52, 54 where it is subjected to a dehydration process (step S4). Then, the substrate G is moved to one of the cooling units (CL) 62, 64 where it is cooled to a certain substrate temperature (step S5). Then, the substrate G is moved to the adhesive unit (AD) 56' at -13 - 1246715 (11) to receive the hydrophobization treatment (step S6). After the hydrophobization treatment is completed, the substrate G is cooled to a certain substrate temperature in one of the cooling units (CL) 62, 64 (step S7). Finally, the substrate G is moved to the transfer unit (PASS) 60 belonging to the downstream side multilayer unit portion (TB) 48. In the first heat treatment unit 26, the substrate G can be arbitrarily moved back and forth between the upstream multilayer unit portion (TB) 44 and the downstream side multilayer unit portion (TB) 48 via the transport mechanism 46. Further, the second and third heat treatment units 30 and 36 can perform the substrate transfer operation in the same manner. When the substrate G that has received the above-described series of heat treatments in the first heat treatment unit 26 moves from the delivery unit (PASS) 60 in the downstream multi-layer unit (TB) 48 to the coating processing unit 28 on the downstream side. Resist coating unit (CT) 82. The substrate G is coated with a photoresist on the upper surface (treated surface) of the substrate by a photoresist coating unit (CT) 82 by, for example, a non-rotation method, and then subjected to decompression at a vacuum drying unit (VD) 84 adjacent to the downstream side. The drying process is followed by removing the excess (unwanted) photoresist on the peripheral portion of the substrate at the edge removing unit (ER) 8.6 adjacent to the downstream side (step S8). The substrate G subjected to the above-described photoresist coating treatment is transferred from the edge removing unit (ER) 86 to the adjacent transfer unit (PASS) belonging to the upstream side multilayer unit portion (TB) 88 of the second heat treatment portion 30. In the second heat treatment unit 30, the substrate G is moved between predetermined units by the transport mechanism 90 in a predetermined program. For example, the substrate G will be first transferred from the transfer unit (PASS) to one of the heating units (PREBAKE), where the baking after application of the photoresist is received (step S9). Next, -14-1246715 (12) the substrate G is moved to one of the cooling units (c 0 L) where it is cooled to a certain temperature (step S 1 〇 ). Then, the substrate G is transferred to the extended cooling stage on the side of the interface station (〗 〖F1) 8 via the transfer unit (PASS)' on the downstream side multi-unit unit (TB) 92 side, or via the transfer unit (PASS)'. (EXT, COL) 1〇8. At the interface station (1/F) 18, the substrate G is transported from the extended cooling stage (EXT, COL) 1〇8 into the peripheral exposure device (EE) of the peripheral device 110, where it is removed from the substrate G when it is subjected to development. After exposure of the photoresist in the peripheral portion, it is sent to the next exposure device 1 2 (step S 1 1 ). The exposure device 1 2 applies exposure of a predetermined circuit pattern to the photoresist on the substrate G. The substrate G after the pattern exposure is returned from the exposure device 12 to the interface station (I/F) 18 (step S11), and is transported to the peripheral device 11T (TITLER), where it is specified on the substrate. The part marks the specified information (step S 1 2 ). Substrate G is then returned to the extended cooling stage (EXT > COL) 108. The transport of the substrate G of the interface station (I/F) 18 and the transfer of the substrate G between the exposure device 12 are performed by the transport device 1〇4. At the processing station (P / S) 16, the substrate G is received by the transport mechanism 90 from the extended cooling stage (EXT, COL) 108 in the second heat treatment unit 30, and is passed through the multilayer unit portion (TB) 92 of the processing line B. The handover unit (PASS) is given to the development processing unit 32. The development processing unit 32 carries the substrate G received from the delivery unit (PASS) in the multi-layer unit (TB) 92 into the development unit (DEV) 94. In the developing unit (DEV) 94, the substrate G is transported to the lower -15-1246715 (13) of the processing line B in a horizontal flow manner, and a series of development processes such as development, rinsing, and drying are performed in the transport. (Step s 13). The substrate G that has undergone the development processing in the development processing unit 32 is carried into the decoloring processing unit 34 adjacent to the downstream side, and receives the decoloring process of the irradiation i line (step S14). The substrate G which has finished the decoloring treatment is transferred to the delivery unit (PASS) in the upstream multi-layer unit portion (TB) 9.8 of the third heat treatment portion 36. In the third heat treatment unit 36, the substrate G is first moved from the delivery unit (PASS) to one of the heating units (POBAKE), and post-baking is performed here (step S15). Then, the substrate G is moved to the transfer/cooling unit (PASS.COL) in the downstream side multilayer unit portion (TB) 102, where it is cooled to a predetermined substrate temperature (step S16). The transport of the substrate G of the third heat treatment unit 36 is carried out by the transport mechanism 100. On the side of the cassette station (C/S) 14, the transport mechanism 22 obtains the entire substrate G from the transfer/cooling unit (PASS·COL) of the third heat treatment unit 36 to complete the coating development process, and accommodates the substrate G. One card C (step S 1 ). The development processing system 10 is applied here, and the present invention can be applied to the photoresist coating unit (CT) 82 of the coating processing unit 28. Hereinafter, an embodiment in which the present invention is applied to a photoresist coating unit (CT) 82 will be described with reference to Figs. 4 to 9 . The main portions of the photoresist coating unit (CT) 82, the reduced-pressure drying unit (VD) 84, and the edge removing unit (ER) 86 of the coating processing unit 28 are shown in Figs. 4 and 5 . -16- 1246715 (14)
此等塗佈系處理單元群（CT ) 82、 （ VD ) 84、.（ ER )8 6是依處理過程之順序在支持台1 1 2上橫方向配置成 一列。可以藉由沿鋪設在支持台1 1 2兩側的一對導軌1 1 4 、1 1 4移動的一組或複數組運送臂1 1 6、1 1 6，在單元間直 接交接基板G。 減壓乾燥單元（VD ) 84具有上面開口的盤子或淺容 器型的下部空腔1 1 8，及可氣密狀密接於此下部空腔118 的上部空腔1 20。下部空腔1 1 8大体上呈四方形，中心部 配設有用以水平載置保持基板G的載置台1 22，底面的四 個角落設有排氣口 124。從下部空腔118的下方連接在各 排氣口 124的排氣管1 2 8通到真空幫浦（未圖示）。以上 部空腔1 2 0蓋在下部空腔1 1 8的狀態下，可以利用該真空 幫浦將兩空腔1 1 8、1 2 0內的處理空間減壓到規定的真空 度。 在邊緣去除單元（ER ) 8 6設有：水平載置支持基板 G的載置台1 3 0 ;在相對向的一對角偶部將基板G定位的 定位手段1 3 2 ;從基板G的四邊的周緣部去除多餘的光阻 劑的4個去除頭134等。在定位手段132將載置台130上 的基板G定位之狀態下，各去除頭1 3 4沿著基板G的各 邊移動’以稀釋劑溶解去除附著在基板各邊周緣部的多餘 的光阻劑。 光阻劑塗佈單元（CT ) 8 2是以非旋轉法在基板G上 塗佈光阻劑液的光阻劑塗佈裝置，備有：上面開口的杯狀 處理容器1 3 6 ;在此處理容器1 3 6內水平載置基板G加以 -17 — 1246715 (15) 保持的載置抬1 3 8 ;爲了使此載置抬1 3 8昇降而設在處 容器136下的昇降驅動部140 ;以XY方向驅動向載置 1 3 8上的基板G ·吐出光阻劑液的光阻劑噴嘴頭1 5 4 (第 圖）的掃描機構1 4 4。 第6圖表示掃描機構144的架構。此掃描機構144 處理容器1 3 6 (第6圖未圖示）兩側配置Y方向延伸的 對Y導軌146、146，同時，在兩Y導軌146、146間架 可向Y方向移動而X方向延伸的X導軌148。配置在 定位置，例如配置在兩Y導軌146、146的一端的Y方 驅動部1 5 0、1 5 0經由無端皮帶等傳動機構（未圖示） 動X導軌148，使其沿兩Y導軌146、146向Y方向直 。同時設有，可以沿X導軌14 8向X方向，例如以自 式或外部驅動方式移動的運送體1 5 2，此運送體1 5 2裝 有向X方向延伸的長形的光阻劑噴嘴頭1 5 4。 如第7圖所示，光阻劑噴嘴頭1 5 4具有：從光阻劑 應管1 5 6的終端部導入光阻劑液的導入通路1 5 7 ;將導 的光阻劑液暫時儲存下來的緩衝室1 5 8 ;從緩衝室1 5 8 底部以一定間隔向垂直下方延伸的複數個噴嘴部1 6 0 ; 在各噴嘴部1 60的射流噴射部1 62。噴嘴部1 60的吐出 160a具有微細徑，例如100 μπι以下的口徑。噴嘴部1 的排列方向與噴嘴頭長度方向平行。 各射流噴射部1 62是採所謂噴墨方式，例如具有壓 元件，藉電氣的驅動信號使壓電元件動作收縮，利用其 縮壓力將噴嘴部1 6 0內的光阻劑液加壓，使成液滴從吐 理 抬 6 在 設 規 向 驅 進 走 設 供 入 的 設 □ 60 電 收 出 -18- 1246715 (16) 口 1 60a成射流噴射（吐出）。光阻劑噴嘴頭1 5·4乃至各 運送體1 5 2搭載有按各射流噴射部1 6 2供應個別的驅動信 號的驅動電路（未圖示）。 在第8圖表示，控制光阻劑噴嘴頭1 5 4的光阻劑液吐 出動作的控制部的架構例子。設定輸入部1 64包含例如操 作盤，用以輸入有關工作件（基板）的種類、尺寸或加工 條件的設定値。主電腦1 6 6便依據輸入的設定値，在基板 G的被處理面上設定實質上分開獨立的複數個塗佈領域， 生成表示塗佈領域的布置的資料，例如塗佈圖像資料。而 ，要在基板G塗佈光阻劑液時，則以規定的定時將塗佈 圖像資料送給噴嘴控制器1 6 8。噴嘴控制器1 6 8則依照從 主電腦1 6 6送來的塗佈圖像資料生成用以個別控制光阻劑 噴嘴頭1 5 4的各射流噴射部1 6 2的光阻劑液吐出動作的噴 嘴控制信號。本實施形態是限定在設定於基板G上的分 散的複雜的塗佈領域，生成塗佈光阻劑液的噴嘴控制信號 。在噴嘴控制器1 6 8生成的噴嘴控制信號是經由上述驅動 電路，供給各對應噴嘴部1 6 0的射流噴射部1 6 2，作爲驅 動信號。另一方面，主電腦1 66則將控制光阻劑噴嘴頭 1 5 4的掃描移動用的掃描控制信號供給掃描機構1 44的控 制器或驅動部。 其次，參照實施例說明本實施形態的光阻劑塗佈單元 (C T ) 8 2的作用。 實施例1 -19- 1246715 (17) 第9圖〜第13圖表示基板G是LCD用的內含多片 型母玻璃基板時的一實施例。 〃 如第9圖所示，母玻璃基板G設定有分開的複數個 ，例如9個液晶面板領域S。通常，液晶面板領域S是矩 形形狀，分開劃線用的1 0〜20 mm左右的間隔或空間， 配置成矩陣狀。將基板G的尺寸或液晶面板領域S的尺 寸、數目（所含片數）及其他布置資訊作爲設定値，從設 定輸入部1 6 4輸入。主電腦1 6 6則對應輸入的設定値，在 基板G上設定對應液晶面板領域S的塗佈領域E。液晶面 板領域S與塗佈領域E的對應關係，最好是1對1，而由 塗佈領域E成必要的最低限度覆蓋液晶面板領域S的整個 領域的關係。例如第9圖所示，設定成塗佈領域E從液晶 面板領域S稍爲突出（例如1〜2 mm )的略爲同形狀。 重要的是，各塗佈領域E是實質上分開獨立，亦即，相鄰 的塗佈領域E、E之間設定有實質上的間隔或空隙d。 如第9圖所示，光阻劑噴嘴頭1 5 4的初期位置P s是 設定在，Y方向的玻璃母基板G上的第1列的液晶面板領 域S的延長上。開始阻劑塗佈處理後，主電腦1 6 6令掃描 機構1 44 (特別是Y方向驅動部1 5 0 )動作，令光阻劑噴 嘴頭1 5 4從初期位置P s向Y方向縱貫玻璃母基板G上的 第1列液晶面板領域S狀直進移動。另一方面，光阻劑噴 嘴頭1 5 4則從光阻劑液供應部（未圖示）經由光阻劑供應 管1 5 6供應光阻劑液。 · 當光阻劑噴嘴頭1 5 4在通過第1列的各液晶面板領域 -20- 1246715 (18) S上方期間，噴嘴控制器1 6 8則由主電腦1 6 ·6產生依塗佈 圖像資料的噴嘴控制信號，令光阻劑噴嘴頭1 5 4的噴嘴部 1 60 (正確一點是射流噴射部Γ62 )選擇性動作。本例是 ，光阻劑噴嘴頭1 54的全噴嘴部1 60中進行光阻劑液吐出 動作的有效噴嘴部1 60是，限定爲對應塗佈領域Ε的寬度 大小（X方向的大小）的區間Μ內者（第7圖）。屬於 此有效區間Μ的所有噴嘴部1 6 0在即將到達各塗佈領域Ε 上方時，開始吐出光阻劑液，在即將移出塗佈領域Ε時停 止吐出光阻劑液。在各塗佈領域Ε內時可連續吐出光阻劑 液，使其以一定膜厚度形成光阻劑液的液膜。不屬於有效 區間Μ的噴嘴部1 60在光阻劑塗佈處理中也維持在非有 效的狀態（OFF狀態）。 如此，如第1 〇圖所示，藉由光阻劑噴嘴頭1 5 4向Y 方向縱貫第1列的液晶面板領域S狀移動，僅在第1列的 各塗佈領域E (圖中的斜線領域）塗佈光阻劑液。 對第1列的液晶面板領域S完成上述塗佈掃描後，光 阻劑噴嘴頭1 5 4沿著第1 0圖的虛線A所示路由移動，對 第2列及第3列也進行同樣的塗佈掃描。詳述之，縱貫第 1列的液晶面板領域S移動到基板G外後先向X方向移動 ，將位置對準第2列的液晶面板領域S，接著，與第1列 時相反，向Y方向縱貫第2列的液晶面板領域S移動’ 其間，進行與上述同樣的光阻劑液的吐出動作，僅在第2 列的各塗佈領域E塗佈光阻劑液。而在移出基板G外後 在向X方向移動，將位置對準第3列的液晶面板領域S ’ -21 - 1246715 (19) 接著，與第1列時同樣的方向，向Y方向縱貫第 液晶面板領域S狀直進移動，其間，進行與上述同 阻劑液的'吐出動作，僅在第3列的各塗佈領域Ε塗 劑液。 其結果是，如第1 1圖所示，僅在分別對應基; 被處理面（上面）中的9個液晶面板領域S的9個 域Ε (圖中的斜線領域）以大致上一定的膜厚度塗 劑液。在與基板周緣部相鄰接的塗佈領域Ε、Ε間 d留下不存在光阻劑液的空領域。 如上述，以光阻劑塗佈單元（CT ) 82施加光 佈處理的基板G，則由運送臂1 1 6、1 1 6移至相鄰 乾燥單元（VD ) 84。在減壓乾燥單元（VD ) 84， G配置在下部空腔1 1 8後被覆上部空腔1 2 0，加以 而使用真空幫浦將空腔室內減壓到例如0. 1 Torr 並維持此減壓狀態一段規定時間。在這種減壓乾燥 以從基板G上的光阻劑有效放出溶劑，但另一面 光阻劑液會隨意移動。但在本實施例，基板G上 劑液是夾著間隔d區分成複數個（9個）塗佈領域 此，光阻劑液的移動只是在較小範圍（被切斷）內 擴大成長到會影響膜厚度的大範圍。因此，減壓乾 基板G上的各塗佈領域E的光阻劑膜大致上可以 一的膜厚度。. 同時，因爲本實施例並不是在基板G全面塗 劑液，而是限定在需要部位或分散塗佈，因此，不 3列的 樣的光 佈光阻 反G的 塗佈領 佈光阻 的空隙 阻劑塗 的減壓 將基板 密閉， 前後， 中，可 ，有時 的光阻 E，因 ，不會 燥後， 維持均 佈光阻 僅可以 -22- 1246715 (20) 減少光阻劑液的使用量，也可以縮短乾燥所需要的時間。 因此”可以縮短減壓乾燥單元，（V D ) 8 4的處理時間，提 高塗佈處理部2 8整體的生產率。 再者，本實施例是如上述，限定在設定於基板G上 的分散的複數個塗佈領域E形成光阻劑液膜。因此，使用 顯像後塗佈領域E內的曝光部分會殘留下來的負片式光阻 劑較佳。 上述例子是將塗佈領域E設定成能以最低限度覆蓋基 板G上的各液晶面板領域S。但是，也可以如第1 2圖所 示，僅在相鄰接液晶面板領域S、S間設定空隙d，將鄰 接液晶面板領域S的基板周緣部包含在塗佈領域E的塗佈 圖型。或者，如第1 3圖所示，僅在各列（或各行）間設 定空隙d，對同一列（或同一行）的液晶面板領域S設定 連續的1個塗佈領域E的塗佈圖型。 而’上述例子是從1片基板G取得9片液晶面板， 但本發明也可以應用在從1片基板取得任意數目的液晶面 板的應用方式。同時，上述例子是，光阻劑噴嘴頭1 5 4對 成矩陣狀設定在基板G上的複數個塗佈領域E，按各列或 各行重複多次塗佈掃描。但，如果光阻劑噴嘴頭1 5 4的噴 嘴部的全長可以覆蓋基板G的端與端間時，也可以在光 阻劑噴嘴頭1 5 4設定分別對應基板G上的全列或全行的 塗佈領域E的有效範圍Μ，以一次掃描方式完成對基板G 的光阻劑液塗佈處理。 上述實施例1是關於液晶顯示器用的內含多片型母玻 -23- 1246715 (21) 璃基板，但本發明可以適用內含任意片數型基板’例如， 有機E L顯示器（〇 E L D )用的劃分多片型母基板或笔獎顯 示器.（P D P )用的劃分多片型母基板等，均可以跟上述貫 施例1相同的方法適用。 實施例2 第14圖〜第16圖表示，基板G是每一個像素均具 有薄膜電晶體（T F T )的T F T液晶顯示器用的基板時的一 個例子。 如第1 4圖所示，TFT液晶顯示器在玻璃基板上的各 像素領域內，使用光平版印刷技術，配設有由T F T ( T h i η Film Transistor )構成的主動元件 1 80，以及由 ITO ( Indium Tin Oxide)構成的透明電極 182。主動兀件領域 或TFT領域形成有由非晶質矽膜或聚矽膜構成的Si薄膜 ，同時，在此S i薄膜上面或下面經由閘極絕緣膜形成有 閘電極，而在閘電極的左右兩側的矽薄膜中形成雜質擴散 領域（源極、汲極）。 在此TFT - LCD的製造過程，例如在第15圖以槪念 方式表不，在基板G上（正確一點是液晶面板上）的各 TFT領域形成Si薄膜的光平版印刷製程，可以使用本實 施形態的光阻劑塗佈方法。亦即，在基板G上設定可覆 室各T F T領域的分散的塗佈領域£，而與上述實施例1同 樣的方法’限定在塗佈領域E塗佈光阻劑液即可。 第1 6圖是以模式方式表示，使用本發明的光阻劑液 -24- 1246715 (22) 塗佈方法，在基板G上的各TFT領域形成Si薄膜的光平 版印刷製程的程序。如、第1 6圖的（A )所示，對在整個 主面形成有S i薄膜1 8 4的基板G ’藉由本發明的光阻劑 塗佈製程，限定僅在覆蓋TFT領域的塗佈領域E形成光 阻劑膜R。接著，在曝光製程，則如第16圖的（B )所示 ，限定在基板G上的分散的各光阻劑膜R曝光光罩1 86 的圖型。此光罩1 8 6的圖型是設定成可以在各光阻劑膜R 的領域內區劃TFT領域。因此，如第16圖的（C )所示 ，在基板G上殘留下來對應各TFT領域的分散的光阻劑 膜R’。藉此，在蝕刻製程是，如第1 6圖的（D )所示， 以此光阻劑膜R’當作光罩，蝕刻底層的Si薄膜1 84。最 後，藉由灰化剝離光阻劑罩R’，便可以如第16圖的（E )所示，在基板G上形成對應各TFT領域的區劃的分散 的Si膜領域184。 本實施例也是可以在光阻劑塗佈製程，藉由格子狀延 伸的空領域d，有效切斷乃至抑制乾燥處理時的基板G上 的光阻劑的移動。因此，可以提高光平版印刷製程的精密 度，可以提高TFT - LCD的製成率或裝置性能。同時， 也可以減少光阻劑的消耗量，縮短乾燥時間。 實施例3 第1 7圖表示，基板G是各像素分別具有紅色、綠色 或藍色的著色層的彩色濾光器用的基板時的一個例子。 彩色濾光器是在透明基板上矩陣狀配置紅色、綠色及 -25- 1246715 (23) 藍色的3原色像素而成，而與電氣方式的光快門組合，藉 此可以進行L C D的彩色顯示。傳統上，彩色濾光器的製 造方法之一有習知的使用光平版印刷的顏料分散法。次製 造方法是，在基板塗佈顏料分散型的光阻劑液（彩色光阻 劑液）後，用紫外線燒上（曝光）光罩的圖型，再進行顯 像’形成單色的著色圖型或像素。按紅色、綠色及藍色的 各色重複上述製程，在基板的整面矩陣狀形成3原色像素 〇 以往在塗佈於基板上時，是在基板的整面塗佈彩色光 阻劑液。但是，依據本發明時，是如第1 7圖（A )所示 ，例如要塗佈紅色的彩色光阻劑液時，在基板G上設定 覆蓋各紅色像素領域的分散的塗佈領域E，而限定在塗佈 領域E或局部性塗佈彩色光阻劑液。曝光製程時則如第 1 7圖的（B )所示，經由光罩1 8 8在塗佈領域E曝光區劃 紅色像素的領域。其結果，如第1 7圖的（C )所示，在基 板G上的紅色像素領域形成紅色像素R’。以同樣的方法 ，形成綠色及藍色的像素（第17圖的（D))。 本實施例也可以抑制塗佈在基板G上的彩色光阻劑 液在乾燥處理中移動，保證彩色光阻劑膜的膜厚度的均一 性。同時，也可以減少彩色光阻劑的消耗量，縮短乾燥時 間。 上述實施例1、2、3只是一個例子，本發明的光阻劑 塗佈方法及裝置可以適用在光平版印刷製程，將任意的光 阻劑液塗佈在任意的基板上的應用方式。因此，本發明的 -26- 1246715 (24) 被處理基板不僅可以用在.L C D用的玻璃基板，同時也可 以用在半導體晶圓、CD基板、玻璃基板、光罩、印刷電 路基板等。 ’ 同時，在上述實施形態的光阻劑塗佈單元（c T ) 8 2 也可以採用，藉由掃描機構1 4 4，令用以對光阻劑噴嘴頭 1 5 4塗佈在基板G上的光阻劑液加熱使其乾燥的加熱器 1 7 0 ’與光阻劑噴嘴頭1 5 4 —起掃描移動的架構。 例如第1 8圖及第1 9圖所示，可以沿掃描方向在光阻 劑噴嘴頭1 54兩側配置一對加熱器丨70，令在前進方向位 於光阻劑噴嘴頭1 5 4後方的加熱器1 7 0選擇性動作。各加 熱器170設有例如由電阻發熱元件構成的發熱部172。經 由瓦斯管174將空氣或氮氣等引進加熱器170，從加熱器 1 7 0向基板G吹溫風。如此，在光阻劑塗佈過程中使剛塗 佈的光阻劑液稍爲乾燥，可以進一步縮短後續的乾燥製程 (減壓乾燥或預烘烤）的乾燥時間。而且，藉由這種前置 乾燥處理，光阻劑液更難移動，因此可以進一步提高膜厚 度的均一性。 在上述實施形態，裝置各部分的架構只是一個例子， 可以做各種變更。特別是，光阻劑噴嘴頭1 5 4的射流噴射 部162並不限定爲壓電方式，加熱方式或荷電控制方式也 可以。 如以上所說明，依據本發明的光阻劑塗佈裝置或光阻 劑塗佈方法時，可以抑制塗佈在被處理基板上的光阻劑液 在乾燥處理中移動’可以保證光阻劑膜的膜厚度的均一性 -27- 1246715 (25) 。同時，可以減少光阻劑液的消耗量，不僅如此，又可以 縮短使塗佈在基板上的光阻劑液乾燥所需要的時間。· 【圖式簡單說明】 第1圖是表示適用使用本發明塗佈方向及塗佈裝置的 塗佈顯像處理系統的架構的平面圖。 第2圖是表示第1圖的塗佈顯像處理系統的熱處理部 的架構的側面圖。 第3圖是表示第1圖的塗佈顯像處理系統的處理程序 的流程圖。 第4圖是表示第1圖的塗佈顯像處理系統的塗佈系處 理單元群的主要部分的架構的平面圖。 第5圖是表示第1圖的塗佈顯像處理系統的塗佈系處 理單元群的主要部分的架構的側面圖。 第6圖是表示一實施形態的光阻劑塗佈單元的掃描機 構的架構的斜視圖。 第7圖是表示實施形態的光阻劑塗佈單元的光阻劑噴 嘴頭的架構例子的縱向截面圖。 第8圖是表示實施形態的用以控制光阻劑噴嘴頭的光 阻劑液噴出動作的控制部的構成例子的方塊圖。 胃9圖是以模式方式表示第1實施例的光阻劑塗佈處 理的一個階段的大略平面圖。 第1 〇圖是以模式方式表示第1實施例的光阻劑塗佈 處理的一個階段的大略平面圖。 -28- 1246715 (26) 第11圖是以模式方式表示結束第i實施例的光阻劑 塗佈處理時的狀態的大略平面福。 第1 2圖是以模式方式表示第1實施例的光阻劑塗佈 圖型的一變形例子的大略平面圖。 第1 3圖是以模式方式表示第1實施例的光阻劑塗佈 圖型的一變形例子的大略平面圖。 第14圖是以模式方式表示第2實施例的TFT - LCD 的陣列基板的架構的大略平面圖。 第1 5圖是表示第2實施例的光阻劑塗佈圖型的大略 平面圖。 第1 6圖是表示第2實施例的光平版印刷製程的大略 截面圖。 第1 7圖是表示第3實施例的光平版印刷製程的大略 截面圖。 第1 8圖是表示實施形態的在光阻劑塗佈單元配設乾 燥手段（加熱器）的架構的大略平面圖。 第1 9圖是表示實施形態的在光阻劑塗佈單元配設乾 燥手段（加熱器）的架構的大略側面圖。 【主要元件對照表】 82 :光阻劑塗佈單元 1 3 8 :載置台 144 :掃描機構 154 :光阻劑噴嘴頭 -29… 1246715 (27) 1 5 6 :光阻劑供應管 1 6 0 :噴嘴部 162 :射流噴射部 1 6 4 :設定輸入部 1 6 6 :主電腦 1 6 8 :噴嘴控制器 1 7 0 :加熱器 -30These coating system processing unit groups (CT) 82, (VD) 84, and (ER) 8 6 are arranged in a row in the lateral direction on the support table 1 1 2 in the order of the processing. The substrate G can be directly transferred between the units by a group or multi-array carrying arms 1 16 , 1 1 6 moving along a pair of rails 1 1 4 , 1 1 4 laid on both sides of the support table 112. The reduced-pressure drying unit (VD) 84 has a top open tray or a shallow container-type lower cavity 182, and an upper cavity 126 that is airtightly attached to the lower cavity 118. The lower cavity 1 18 is substantially square, and the center portion is provided with a mounting table 1 22 for horizontally placing the holding substrate G, and four corners of the bottom surface are provided with an exhaust port 124. An exhaust pipe 1 2 8 connected to each of the exhaust ports 124 from below the lower cavity 118 opens to a vacuum pump (not shown). The vacuum chamber is used to depressurize the processing space in the two cavities 1 18 and 120 to a predetermined degree of vacuum in a state where the upper cavity 120 is covered by the lower cavity 1 18 . The edge removing unit (ER) 8 6 is provided with: a mounting table 1 30 that horizontally mounts the supporting substrate G; a positioning means 1 3 2 that positions the substrate G in a pair of opposing diagonal portions; and four sides of the substrate G The peripheral portion removes the four removal heads 134 of the excess photoresist and the like. In a state in which the positioning means 132 positions the substrate G on the mounting table 130, each of the removal heads 134 moves along each side of the substrate G to dissolve and remove excess photoresist which adheres to the peripheral portion of each side of the substrate by a diluent. . The photoresist coating unit (CT) 8 2 is a photoresist coating device for coating a photoresist liquid on the substrate G by a non-rotation method, and is provided with a cup-shaped processing container 163 having an upper opening; The processing container 1 36 has a horizontal mounting substrate G to be mounted -17-1246715 (15) to hold the mounting lift 1 3 8; and the lifting drive portion 140 disposed under the container 136 for lifting the mounting lift 1 3 8 The scanning mechanism 1 4 4 of the photoresist nozzle head 1 5 4 (Fig. 1) on which the substrate G is placed in the XY direction and the photoresist liquid is discharged. Figure 6 shows the architecture of the scanning mechanism 144. The scanning mechanism 144 processes the pair of Y guide rails 146 and 146 extending in the Y direction on both sides of the container 136 (not shown in FIG. 6), and moves the Y direction in the Y direction between the two Y rails 146 and 146. Extended X rail 148. In the fixed position, for example, the Y-side driving portions 150, 150, which are disposed at one end of the two Y-rails 146, 146, move the X-rail 148 via a transmission mechanism (not shown) such as an endless belt, so as to be along the two Y-rails. 146, 146 are straight to the Y direction. At the same time, there is provided a transport body 1 5 2 which is movable in the X direction along the X rail 14 8 , for example, a self-propelled or externally driven manner, and the transport body 15 2 is provided with an elongated photoresist nozzle extending in the X direction. Head 1 5 4. As shown in Fig. 7, the photoresist nozzle head 154 has an introduction path 157 for introducing a photoresist liquid from a terminal portion of the photoresist tube 156; and temporarily storing the guided photoresist liquid. The buffer chamber 1 5 8 is a plurality of nozzle portions 1 60 that extend vertically downward from the bottom of the buffer chamber 1 5 8 at a predetermined interval; and the jet ejecting portion 1 62 of each nozzle portion 1 60. The discharge 160a of the nozzle unit 1 60 has a fine diameter, for example, a diameter of 100 μm or less. The arrangement direction of the nozzle portions 1 is parallel to the longitudinal direction of the nozzle head. Each of the jet ejecting units 1 62 is a so-called ink jet system, and has a pressure element, for example, which is operated by a driving signal of an electric motor to contract the piezoelectric element, and pressurizes the photoresist liquid in the nozzle unit 160 by the contraction pressure. The droplets are lifted from the sputum. In the setting, the supply is supplied to the drive. 60 Electrical discharge -18-1246715 (16) Port 1 60a is jetted (discharged). A photoresist circuit (not shown) for supplying individual drive signals to the respective jet ejecting units 162 is mounted on the photoresist nozzle heads 15.4 and even the transport bodies 152. Fig. 8 shows an example of the structure of a control unit that controls the photoresist liquid discharge operation of the photoresist nozzle head 154. The setting input unit 1 64 includes, for example, an operation panel for inputting a setting 有关 regarding the type, size, or processing condition of the workpiece (substrate). The host computer 166 sets a plurality of substantially separate application areas on the processed surface of the substrate G according to the input setting ,, and generates information indicating the layout of the application area, for example, coated image data. On the other hand, when the photoresist liquid is applied to the substrate G, the coated image data is sent to the nozzle controller 168 at a predetermined timing. The nozzle controller 168 generates a photoresist liquid discharge operation for individually controlling the jet ejection portions 1 6 2 of the photoresist nozzle heads 154 in accordance with the coated image data sent from the host computer 166. Nozzle control signal. This embodiment is limited to a complicated coating application area which is set on the substrate G, and generates a nozzle control signal for applying the photoresist liquid. The nozzle control signal generated by the nozzle controller 168 is supplied to the jet ejecting unit 1 6 2 of each corresponding nozzle unit 160 via the above-described driving circuit as a driving signal. On the other hand, the host computer 1 66 supplies a scan control signal for controlling the scanning movement of the photoresist nozzle head 154 to the controller or drive unit of the scanning mechanism 1 44. Next, the action of the photoresist application unit (C T ) 8 2 of the present embodiment will be described with reference to the examples. [Embodiment 1] -19- 1246715 (17) Figs. 9 to 13 show an embodiment in which the substrate G is a multi-piece mother glass substrate for LCD. 〃 As shown in Fig. 9, the mother glass substrate G is set to have a plurality of separate sheets, for example, nine liquid crystal panel fields S. Usually, the liquid crystal panel field S is a rectangular shape, and a space or a space of about 10 to 20 mm for separating the scribe lines is arranged in a matrix. The size of the substrate G, the size, the number (the number of sheets included) of the liquid crystal panel field S, and other arrangement information are set as the settings, and are input from the setting input unit 146. The main computer 166 sets the coating area E corresponding to the liquid crystal panel field S on the substrate G corresponding to the input setting 値. The correspondence between the liquid crystal panel field S and the coating field E is preferably one-to-one, and the coating field E is required to minimally cover the entire field of the liquid crystal panel field S. For example, as shown in Fig. 9, it is set such that the coating area E is slightly protruded from the liquid crystal panel field S (for example, 1 to 2 mm). It is important that each coating field E is substantially separate and independent, i.e., a substantially spaced or void d is provided between adjacent coating fields E, E. As shown in Fig. 9, the initial position P s of the photoresist nozzle head 154 is set to extend in the liquid crystal panel region S of the first row on the mother glass substrate G in the Y direction. After the resist coating process is started, the main computer 166 causes the scanning mechanism 1 44 (especially the Y-direction driving unit 150) to operate, and the photoresist nozzle head 154 is moved from the initial position Ps to the Y direction. The first column of the liquid crystal panel on the mother glass substrate G moves in the S shape. On the other hand, the photoresist nozzle head 154 supplies the photoresist liquid from the photoresist supply portion (not shown) via the photoresist supply tube 156. · When the photoresist nozzle head 154 is above the liquid crystal panel field -20-1246715 (18) S of the first column, the nozzle controller 168 is generated by the main computer 1 6 ·6 The nozzle control signal of the image sensor selectively causes the nozzle portion 1 60 of the photoresist nozzle head 154 (correctly, the jet ejection portion Γ 62) to operate selectively. In this example, the effective nozzle portion 160 in which the photoresist liquid discharge operation is performed in the total nozzle portion 1 60 of the photoresist nozzle head 154 is limited to the width (the size in the X direction) corresponding to the coating area Ε. Within the interval (Figure 7). When all of the nozzle portions 160 belonging to the effective section 即将 are immediately above the respective application areas Ε, the photoresist liquid is discharged, and when the coating area is removed, the photoresist liquid is stopped. The photoresist liquid can be continuously ejected in the coating area to form a liquid film of the photoresist liquid with a certain film thickness. The nozzle portion 1 60 that does not belong to the effective section 维持 is also maintained in an inactive state (OFF state) during the photoresist coating process. Thus, as shown in Fig. 1, the liquid crystal panel field in the first column is moved in the S direction by the photoresist nozzle head 154 in the Y direction, and only in the coating field E of the first column (in the figure) The slash field) is coated with a photoresist solution. After the coating scan is completed in the liquid crystal panel field S of the first column, the photoresist nozzle head 154 moves along the line indicated by the broken line A in FIG. 10, and the same applies to the second column and the third column. Coating scan. Specifically, the liquid crystal panel field S that has passed through the first column moves to the outside of the substrate G and then moves in the X direction to align the position of the liquid crystal panel S in the second column, and then, in the opposite direction to the first column, to Y. The direction of the liquid crystal panel S in the second row is shifted. In the meantime, the discharge operation of the photoresist liquid is performed in the same manner as described above, and the photoresist liquid is applied only to each of the application areas E in the second column. After moving out of the substrate G, it moves in the X direction, and is aligned with the liquid crystal panel field of the third column S ' -21 - 1246715 (19). Then, in the same direction as in the first column, the Y direction is continued. In the liquid crystal panel field, the S-shaped straight movement is performed, and during the "spraying operation" with the above-mentioned same resist liquid, the coating liquid is applied only in each of the coating areas in the third row. As a result, as shown in Fig. 1, only the respective fields and the nine fields of the nine liquid crystal panel fields S in the processed surface (upper surface) (the oblique line in the figure) are substantially constant films. Thickness coating solution. In the coating field Ε and Ε d adjacent to the peripheral portion of the substrate, an empty region where the photoresist liquid is absent is left. As described above, the substrate G subjected to the optical cloth treatment by the photoresist coating unit (CT) 82 is moved to the adjacent drying unit (VD) 84 by the transport arms 1 16 and 116. After the decompression drying unit (VD) 84, G is disposed in the lower cavity 1 18, the upper cavity 1 2 0 is covered, and the vacuum chamber is used to decompress the cavity to, for example, 0.1 Torr and maintain the reduction. The pressure state for a specified period of time. This drying under reduced pressure is effective to discharge the solvent from the photoresist on the substrate G, but the photoresist liquid on the other side is free to move. However, in the present embodiment, the liquid material on the substrate G is divided into a plurality of (9) coating fields with a gap d therebetween, and the movement of the photoresist liquid is expanded to a small extent (cut). A wide range that affects film thickness. Therefore, the photoresist film of each of the coating areas E on the vacuum-depleted substrate G can have a film thickness of substantially one. At the same time, since this embodiment is not a coating liquid on the substrate G, but is limited to a desired portion or a dispersion coating, the coating of the optical fabric of the optical fabric is not the same as that of the coating. The decompression of the void-resistant coating seals the substrate, before, during, during, and sometimes the photoresist E, because, after drying, the uniform photoresist can be maintained only -22-1246715 (20) Reduce the photoresist solution The amount of use can also shorten the time required for drying. Therefore, the processing time of the vacuum drying unit (VD) 8 4 can be shortened, and the productivity of the entire coating processing unit 28 can be improved. Further, the present embodiment is limited to the plural of the dispersion set on the substrate G as described above. The coating area E forms a photoresist liquid film. Therefore, it is preferable to use a negative-type photoresist which remains in the exposed portion in the coating field E after development. The above example is to set the coating area E to The liquid crystal panel field S on the substrate G is covered at least. However, as shown in FIG. 2, the gap d may be set only between adjacent liquid crystal panel fields S and S, and the periphery of the substrate adjacent to the liquid crystal panel field S may be provided. The part includes the coating pattern in the coating area E. Alternatively, as shown in Fig. 3, the gap d is set only between each column (or each row), and the liquid crystal panel field S of the same column (or the same row) is set. The coating pattern of one continuous coating area E. In the above example, nine liquid crystal panels are obtained from one substrate G, but the present invention can also be applied to an application method in which an arbitrary number of liquid crystal panels are obtained from one substrate. At the same time, the above example is light The resist nozzle heads 154 are arranged in a plurality of coating fields E arranged in a matrix on the substrate G, and the coating scan is repeated a plurality of times for each column or row. However, if the nozzle portion of the photoresist nozzle head 154 When the entire length can cover the end between the end of the substrate G, the effective range of the coating field E corresponding to the entire column or the entire row on the substrate G can be set in the photoresist nozzle head 154, in one scanning mode. The photoresist liquid coating treatment for the substrate G is completed. The first embodiment relates to a multi-chip mother glass-23- 1246715 (21) glass substrate for a liquid crystal display, but the present invention can be applied to any number of sheets. For example, a divided multi-chip mother substrate for a green EL display (〇ELD) or a multi-chip mother substrate for a PPI display can be applied in the same manner as in the above-described first embodiment. Embodiment 2 FIGS. 14 to 16 show an example in which the substrate G is a substrate for a TFT liquid crystal display having a thin film transistor (TFT) for each pixel. As shown in FIG. In the field of each pixel on the glass substrate, The lithography technique is provided with an active device 180 made of TFT (T hi η Film Transistor) and a transparent electrode 182 made of ITO (Indium Tin Oxide). The active device field or the TFT field is formed by non- a Si film composed of a crystalline ruthenium film or a ruthenium film, and a gate electrode is formed on the upper or lower surface of the S i film via a gate insulating film, and an impurity diffusion region is formed in the ruthenium film on the left and right sides of the gate electrode ( In the TFT-LCD manufacturing process, for example, in Fig. 15, the lithographic pattern of the Si film is formed on each of the TFT regions on the substrate G (the correct one is on the liquid crystal panel). For the printing process, the photoresist coating method of the present embodiment can be used. That is, the coating field of the dispersion of each of the T F T regions in the coating chamber can be set on the substrate G, and the same method as in the above-described first embodiment can be applied to the coating field E to apply the photoresist liquid. Fig. 16 is a view showing a procedure of a photolithography process for forming a Si thin film on each of the TFT regions on the substrate G by using the photoresist solution -24-1246715 (22) coating method of the present invention. As shown in (A) of Fig. 6, the substrate G' having the S i film 184 formed on the entire main surface is coated by the photoresist coating process of the present invention, and is limited to coating only in the field of the TFT. Field E forms a photoresist film R. Next, in the exposure process, as shown in FIG. 16(B), the patterns of the respective photoresist films R that are dispersed on the substrate G are exposed to the mask 186. The pattern of the mask 186 is set so as to be able to divide the TFT field in the field of each photoresist film R. Therefore, as shown in (C) of Fig. 16, the dispersed photoresist film R' corresponding to each TFT region remains on the substrate G. Thereby, in the etching process, as shown in (D) of Fig. 16, the photoresist film R' is used as a mask to etch the underlying Si film 184. Finally, by peeling off the photoresist mask R' by ashing, as shown in Fig. 16 (E), a dispersed Si film region 184 corresponding to the division of each TFT region can be formed on the substrate G. In the present embodiment, it is also possible to effectively cut or even suppress the movement of the photoresist on the substrate G during the drying process by the void region d which is extended in a lattice form in the photoresist coating process. Therefore, the precision of the photolithography process can be improved, and the TFT-LCD fabrication rate or device performance can be improved. At the same time, it can also reduce the consumption of photoresist and shorten the drying time. (Embodiment 3) Fig. 17 shows an example in which the substrate G is a substrate for a color filter in which each pixel has a coloring layer of red, green or blue. The color filter is formed by arranging red, green, and -25-1246715 (23) blue three primary color pixels in a matrix on a transparent substrate, and combining with an electric light shutter, whereby color display of L C D can be performed. Conventionally, one of the methods for producing a color filter is a conventional pigment dispersion method using photolithography. In the secondary manufacturing method, after the pigment-dispersed photoresist liquid (color photoresist liquid) is applied to the substrate, the pattern of the photomask is burned (exposure) with ultraviolet rays, and then the image is formed to form a monochrome color map. Type or pixel. The above process is repeated in each of red, green, and blue colors, and three primary color pixels are formed in a matrix on the entire surface of the substrate. Conventionally, when applied to a substrate, a color resist liquid is applied to the entire surface of the substrate. However, according to the present invention, as shown in Fig. 7 (A), for example, when a red color resist liquid is to be applied, a coating area E covering the dispersion of each red pixel field is set on the substrate G, It is limited to coating the field E or locally coating the color photoresist liquid. In the exposure process, as shown in (B) of Fig. 17, the area of the red pixel is exposed in the coating area E through the mask 188. As a result, as shown in (C) of Fig. 7, a red pixel R' is formed in the red pixel region on the substrate G. In the same way, green and blue pixels are formed ((D) of Fig. 17). This embodiment can also suppress the movement of the color photoresist liquid coated on the substrate G in the drying process to ensure the uniformity of the film thickness of the color photoresist film. At the same time, it is also possible to reduce the consumption of color photoresist and shorten the drying time. The above embodiments 1, 2, and 3 are merely examples, and the photoresist coating method and apparatus of the present invention can be applied to an optical lithography process in which an arbitrary photoresist liquid is applied to an arbitrary substrate. Therefore, the substrate to be processed of -26- 1246715 (24) of the present invention can be used not only for a glass substrate for .L C D but also for a semiconductor wafer, a CD substrate, a glass substrate, a photomask, a printed circuit substrate or the like. At the same time, the photoresist coating unit (c T ) 8 2 of the above embodiment may also be used to apply the photoresist nozzle head 154 to the substrate G by the scanning mechanism 14 4 . The photoresist liquid is heated to dry the heater 1 70 ' with the photoresist nozzle head 1 5 4 to scan the moving structure. For example, as shown in FIGS. 18 and 19, a pair of heaters 70 may be disposed on both sides of the photoresist nozzle head 154 in the scanning direction so as to be located behind the photoresist nozzle head 154 in the forward direction. The heater 170 is selectively operated. Each of the heaters 170 is provided with a heat generating portion 172 composed of, for example, a resistance heating element. Air or nitrogen gas or the like is introduced into the heater 170 via the gas pipe 174, and the warm air is blown from the heater 170 to the substrate G. Thus, the freshly applied photoresist liquid is slightly dried during the photoresist coating process, and the drying time of the subsequent drying process (depressurization drying or prebaking) can be further shortened. Moreover, with this pre-drying treatment, the photoresist liquid is more difficult to move, so that the uniformity of the film thickness can be further improved. In the above embodiment, the structure of each part of the apparatus is only an example, and various modifications can be made. In particular, the jet ejecting portion 162 of the photoresist nozzle head 154 is not limited to the piezoelectric method, and may be a heating method or a charging control method. As described above, according to the photoresist coating device or the photoresist coating method of the present invention, it is possible to suppress the photoresist liquid coated on the substrate to be processed from moving during the drying process to ensure the photoresist film. The uniformity of the film thickness is -27-1264715 (25). At the same time, the consumption of the photoresist liquid can be reduced, and the time required for drying the photoresist liquid coated on the substrate can be shortened. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing the structure of a coating development processing system to which the coating direction and the coating apparatus of the present invention are applied. Fig. 2 is a side view showing the structure of a heat treatment portion of the coating development processing system of Fig. 1. Fig. 3 is a flow chart showing a processing procedure of the coating development processing system of Fig. 1. Fig. 4 is a plan view showing the configuration of a main part of a coating system processing unit group of the coating development processing system of Fig. 1. Fig. 5 is a side view showing the configuration of a main part of a coating system processing unit group of the coating development processing system of Fig. 1. Fig. 6 is a perspective view showing the structure of a scanning mechanism of the photoresist applying unit of the embodiment. Fig. 7 is a longitudinal cross-sectional view showing an example of the structure of a photoresist nozzle head of the photoresist application unit of the embodiment. Fig. 8 is a block diagram showing an example of the configuration of a control unit for controlling the discharge of the photoresist liquid to the photoresist nozzle head in the embodiment. The stomach 9 is a schematic plan view schematically showing one stage of the photoresist coating treatment of the first embodiment. Fig. 1 is a schematic plan view schematically showing one stage of the photoresist coating treatment of the first embodiment. -28- 1246715 (26) Fig. 11 is a schematic view showing a state in which the state of the photoresist coating treatment of the i-th embodiment is completed. Fig. 1 is a schematic plan view showing a modified example of the photoresist coating pattern of the first embodiment in a mode. Fig. 1 is a schematic plan view schematically showing a modified example of the photoresist coating pattern of the first embodiment. Fig. 14 is a schematic plan view showing the structure of the array substrate of the TFT-LCD of the second embodiment in a mode. Fig. 15 is a schematic plan view showing a photoresist coating pattern of the second embodiment. Fig. 16 is a schematic cross-sectional view showing the photolithography process of the second embodiment. Fig. 17 is a schematic cross-sectional view showing the photolithography process of the third embodiment. Fig. 18 is a schematic plan view showing the structure in which a drying means (heater) is disposed in the photoresist applying unit in the embodiment. Fig. 19 is a schematic side view showing the structure in which a drying means (heater) is disposed in the photoresist applying unit according to the embodiment. [Main component comparison table] 82: photoresist coating unit 1 3 8 : mounting table 144: scanning mechanism 154: photoresist nozzle head -29... 1246715 (27) 1 5 6 : photoresist supply tube 1 6 0 : Nozzle portion 162 : Jet ejecting unit 1 6 4 : Setting input unit 1 6 6 : Main computer 1 6 8 : Nozzle controller 1 7 0 : Heater -30