JP2004146651A - Method and apparatus for coating with resist - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To keep the film thickness of a resist film uniform by suppressing a movement of a resist liquid coating a substrate to be processed during a drying process. <P>SOLUTION: A resist nozzle head 154 moves along a route shown by a chain line A, and sequentially scans to coat in first to third rows. More particularly, a liquid crystal panel region S of each row is longitudinally moved in a direction Y, and only each coating region E (shaded regions in Figure) is coated with the resist liquid in a limited manner. Thus, only the coating region E corresponding to the liquid crystal panel region S of the surface to be processed of the substrate G is coated with the resist liquid in a substantially constant film thickness. A blank region in which the resist liquid film does not exist, is retained in a gap (d) between coating regions E and E adjacently brought into contact with the peripheral edge of the substrate. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a resist coating method and apparatus for applying a resist liquid to a substrate to be processed in a photolithography process.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, in a photolithography process in a manufacturing process of an LCD or a semiconductor device, a so-called spin coating method has been frequently used to apply a resist solution onto a substrate to be processed (a glass substrate, a semiconductor wafer, or the like) (for example, see Patent Reference 1). However, the spin coating method spins the substrate to be processed at a considerably high speed, so that a large amount of the resist solution is scattered out of the substrate by centrifugal force, and is discarded or causing particles. is there. In particular, as the size of the substrate increases, not only the above problem becomes more remarkable, but also the turbulence of air is caused due to a large peripheral velocity at the outer peripheral portion of the substrate during spin rotation, which easily causes a variation in the thickness of the resist film. There is also a problem.
[0003]
For this reason, recently, as a resist coating method advantageous for increasing the size of the substrate, high-speed rotation is required by discharging the resist liquid continuously with a small diameter while relatively moving or scanning a resist nozzle above the substrate. A technique (spinless method) in which a resist solution is applied to a substrate with a desired film thickness without using the same has been widespread (for example, see Patent Documents 2 and 3).
[0004]
[Patent Document 1]
JP-A-8-255745 (page 4-6, FIG. 2)
[Patent Document 2]
JP-A-20001-162207 (page 4, FIG. 2, FIG. 3)
[Patent Document 3]
JP-A-10-76207 (page 3-4, FIG. 1)
[0005]
[Problems to be solved by the invention]
In the conventional spinless method, a resist solution is applied so as to fill the entire surface of the substrate to be processed. However, according to this method, even when the resist liquid is applied to the substrate at a substantially constant film thickness, the resist liquid moves in a random direction on the substrate during a subsequent drying process, that is, under reduced pressure drying or pre-baking. In some cases, a resist film having a non-uniform thickness after drying may be formed. Another problem is that the time required for drying the resist solution is long.
[0006]
The present invention has been made in view of the problems of the related art, and suppresses movement of a resist solution applied on a substrate to be processed during a drying process, thereby ensuring uniformity of the thickness of a resist film. It is an object to provide a resist coating method and a resist coating device.
[0007]
It is another object of the present invention to provide a resist coating method and a resist coating apparatus which can reduce the consumption of a resist solution.
[0008]
Another object of the present invention is to provide a resist coating method and a resist coating apparatus that reduce the time required for drying a resist solution applied on a substrate.
[0009]
[Means for Solving the Problems]
In order to achieve the above object, a resist coating method according to the present invention is directed to a resist coating method for coating a resist liquid on a substrate to be processed in a photolithography step, wherein a plurality of coating areas substantially separated and independent on the substrate are provided. And applying a resist liquid to the substrate only in the application area.
[0010]
Further, the resist coating apparatus of the present invention is a resist nozzle head in which a plurality of nozzle units configured to be able to independently control the resist liquid discharge operation are arranged at regular intervals, and Scanning means for relatively scanning and moving a resist nozzle head, coating area setting means for setting a plurality of coating areas substantially separated and independent on the substrate, and a resist limited to the coating area with respect to the substrate A resist liquid discharge control means for controlling a resist liquid discharge operation of the nozzle portion in the resist nozzle head so as to apply a liquid.
[0011]
According to the present invention, the resist liquid is applied only to discrete application areas of the surface to be processed on the substrate, and the resist liquid is not applied to other areas. Even if the resist liquid sways, it is limited to the inside of the application area, so that the entire liquid does not develop or return, and the film thickness of the resist liquid is kept constant. In addition, since the resist liquid is applied to only a necessary portion (application region) in a limited or discrete manner, not on the entire surface of the substrate, the consumption of the resist liquid can be reduced, and the time required for drying can be shortened. .
[0012]
In the method of the present invention, in order to reduce coating unevenness in the coating region, preferably, the resist solution may be coated in the coating region so as to cover the entire region with a substantially constant film thickness. In the apparatus of the present invention, preferably, the scanning unit moves the resist nozzle head relative to the substrate in a first direction perpendicular to the arrangement direction of the nozzle units, and a first scanning unit that moves the resist nozzle head relative to the substrate. A second scanning unit that relatively moves the resist nozzle head in a second direction parallel to the arrangement direction of the nozzle units. Further, in order to further shorten the drying time after the coating, preferably, there is provided a drying unit for heating and drying the resist solution immediately after being coated on the substrate, and the drying unit is connected to the resist nozzle head by the scanning unit. It is good also as a structure which scan-moves together.
[0013]
As one embodiment of the present invention, when the substrate is a multi-panel mother substrate for a flat panel display, an application region may be set corresponding to each panel region on the substrate.
[0014]
As another aspect, when the substrate is a substrate for a TFT liquid crystal display having a thin film transistor (TFT) for each pixel, a coating region may be set corresponding to each TFT region on the substrate.
[0015]
When the substrate is a substrate for a color filter having a red, green or blue colored layer for each pixel, an application region is set for each colored layer in correspondence with each pixel region on the substrate. Good.
[0016]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
[0017]
FIG. 1 shows a coating and developing system as one configuration example to which the resist coating method and apparatus of the present invention can be applied. The coating and developing processing system 10 is installed in a clean room, for example, using a glass substrate for LCD as a substrate to be processed, and performing each of cleaning, resist coating, pre-baking, developing, and post-baking in a photolithography process in an LCD manufacturing process. Processing is performed. The exposure processing is performed by an external exposure apparatus 12 installed adjacent to this system.
[0018]
In this coating and developing system 10, a horizontally long process station (P / S) 16 is disposed at the center, and a cassette station (C / S) 14 and an interface station (I / F) are provided at both ends in the longitudinal direction (X direction). ) 18 are arranged.
[0019]
The cassette station (C / S) 14 is a cassette loading / unloading port of the system 10, and can mount up to four cassettes C capable of accommodating a plurality of substrates G in a horizontal direction, for example, in the Y direction so that the substrates G are stacked in multiple stages. A cassette stage 20 and a transport mechanism 22 for taking the substrate G in and out of the cassette C on the stage 20. The transfer mechanism 22 has a unit capable of holding the substrate G, for example, a transfer arm 22a, is operable in four axes of X, Y, Z, and θ, and is located between the adjacent process station (P / S) 16 and the substrate G. It can be handed over.
[0020]
The process station (P / S) 16 arranges each processing unit on a pair of parallel and opposite lines A and B extending in the system longitudinal direction (X direction) in the order of process flow or process. More specifically, an upstream process line A from the cassette station (C / S) 14 to the interface station (I / F) 18 has a cleaning process unit 24, a first thermal processing unit 26, , A coating process unit 28 and a second thermal processing unit 30 are arranged in a horizontal row. On the other hand, a process line B downstream from the interface station (I / F) 18 to the cassette station (C / S) 14 includes a second thermal processing unit 30, a developing process unit 32, and a decolorizing process. The section 34 and the third thermal processing section 36 are arranged in a horizontal row. In this line configuration, the second thermal processing unit 30 is located at the end of the upstream process line A and at the head of the downstream process line B, and straddles between both lines A and B. ing.
[0021]
An auxiliary transfer space 38 is provided between the process lines A and B, and a shuttle 40 capable of horizontally mounting the substrates G one by one is bidirectionally driven in a line direction (X direction) by a drive mechanism (not shown). You can move to.
[0022]
In the upstream process line A, the cleaning process section 24 includes a scrubber cleaning unit (SCR) 42, and an excimer is located in a location adjacent to the cassette station (C / S) 10 in the scrubber cleaning unit (SCR) 42. A UV irradiation unit (e-UV) 41 is provided. The cleaning unit in the scrubber cleaning unit (SCR) 42 performs brushing cleaning and blow cleaning on the upper surface (the surface to be processed) of the substrate G while transporting the LCD substrate G in the horizontal direction in the line A direction by roller transportation or belt transportation. It has become.
[0023]
The first thermal processing unit 26 adjacent to the downstream side of the cleaning process unit 24 is provided with a vertical transport mechanism 46 at the center along the process line A, and a plurality of units are stacked and arranged in multiple stages on both front and rear sides thereof. are doing. For example, as shown in FIG. 2, the upstream multi-stage unit (TB) 44 includes a pass unit (PASS) 50 for substrate transfer, heating units (DHP) 52 and 54 for dehydration baking, and an adhesion unit. (AD) 56 are stacked in order from the bottom. Here, the pass unit (PASS) 50 is used for transferring the substrate G to and from the scrubber cleaning unit (SCR) 42 side. In the downstream multi-stage unit (TB) 48, a pass unit (PASS) 60 for substrate transfer, cooling units (CL) 62 and 64, and an adhesion unit (AD) 66 are stacked in order from the bottom. Here, the pass unit (PASS) 60 is for transferring the substrate G to and from the coating processing unit 28 side.
[0024]
As shown in FIG. 2, the transport mechanism 46 includes a vertically movable body 70 that can move up and down along a guide rail 68 that extends in a vertical direction, and a swing that can rotate or rotate in the θ direction on the vertically movable body 70. It has a transfer body 72 and a transfer arm or tweezers 74 that can move forward and backward or extend and contract in the front-rear direction while supporting the substrate G on the turning transfer body 72. A driving unit 76 for vertically moving the elevating carrier 70 is provided on the base end side of the vertical guide rail 68, and a driving unit 78 for rotating and driving the swiveling carrier 72 is attached to the elevating carrier 70. A driving unit 80 for driving the reciprocation 74 is attached to the rotary conveyance body 72. Each of the driving units 76, 78, 80 may be constituted by, for example, an electric motor or the like.
[0025]
The transport mechanism 46 configured as described above can access any units in the multi-stage unit (TB) 44, 48 on both sides by moving up and down or turning at high speed, and the shuttle on the auxiliary transport space 38 side. In both cases, the substrate G can be transferred.
[0026]
As shown in FIG. 1, the coating processing unit 28 adjacent to the downstream side of the first thermal processing unit 26 includes a resist coating unit (CT) 82, a reduced-pressure drying unit (VD) 84, and an edge remover unit (ER). 86 are arranged in a line along the process line A. Although not shown, a transport device for loading / unloading the substrates G one by one into the three units (CT) 82, (VD) 84, and (ER) 86 in the process order is provided in the coating process unit 28. In each of the units (CT) 82, (VD) 84, and (ER) 86, each processing is performed for each substrate.
[0027]
The second thermal processing unit 30 adjacent to the downstream side of the coating process unit 28 has the same configuration as the first thermal processing unit 26, and has a vertical type between both process lines A and B. , A multi-stage unit (TB) 88 is provided on the process line A side (last tail), and the other multi-stage unit (TB) 92 is provided on the process line B side (head).
[0028]
Although not shown, for example, in the multi-stage unit (TB) 88 on the process line A side, a pass unit (PASS) for transferring a substrate is placed at the lowest stage, and a heating unit (PREBAKE) for pre-bake is placed thereon. For example, they may be stacked in three layers. In the multi-stage unit (TB) 92 on the process line B side, a pass unit (PASS) for transferring a substrate is placed at the lowest stage, and a cooling unit (COL) is stacked, for example, on one stage. A prebaking heating unit (PREBAKE) may be stacked in, for example, a two-stage stack.
[0029]
The transport mechanism 90 in the second thermal processing unit 30 includes one substrate G in the coating process unit 28 and the development process unit 32 via each pass unit (PASS) of both multi-stage unit (TB) 88 and 92. In addition to the transfer of the substrate G in units, the substrate G can be transferred to and from the shuttle 40 in the auxiliary transfer space 38 and the interface station (I / F) 18 described later.
[0030]
In the downstream process line B, the developing process section 32 includes a so-called flat-flow type developing unit (DEV) 94 that performs a series of developing processing steps while transporting the substrate G in a horizontal posture.
[0031]
A third thermal processing unit 36 is disposed downstream of the developing process unit 32 with the decolorizing process unit 34 interposed therebetween. The decolorization process unit 34 includes an i-ray UV irradiation unit (i-UV) 96 for irradiating the processing surface of the substrate G with i-rays (wavelength 365 nm) to perform the decolorization processing.
[0032]
The third thermal processing unit 36 has the same configuration as the first thermal processing unit 26 and the second thermal processing unit 30, and has a vertical transfer mechanism 100 along the process line B. And a pair of multi-stage unit portions (TB) 98, 102 on both front and rear sides thereof.
[0033]
Although not shown, for example, a pass unit (PASS) is placed at the lowermost stage in the upstream multi-stage unit (TB) 98, and a heating unit (POBAKE) for post-baking is stacked on it, for example, in a three-stage stack. May be stacked. A post-baking unit (POBAKE) is placed at the bottom of the multi-stage unit (TB) 102 on the downstream side, and a pass cooling unit (PASS · COL) for transferring and cooling the substrate is placed on the post-baking unit. The heating units for post-baking (POBAKE) may be stacked on top of each other.
[0034]
The transport mechanism 100 in the third thermal processing unit 36 is connected to the i-line UV irradiation unit (PASS) through the pass unit (PASS) and the pass cooling unit (PASS · COL) of the two multi-stage unit (TB) 98, 102, respectively. Not only can the substrate G be transferred to and from the i-UV) 96 and the cassette station (C / S) 14, but also the substrate G can be transferred to and from the shuttle 40 in the auxiliary transfer space 38 by one sheet. .
[0035]
The interface station (I / F) 18 has a transfer device 104 for exchanging the substrate G with the adjacent exposure device 12, and a buffer stage (BUF) 106 and an extension cooling stage (EXT · COL) around the transfer device 104. ) 108 and peripheral devices 110 are arranged. A stationary buffer cassette (not shown) is placed on the buffer stage (BUF) 105. The extension / cooling stage (EXT · COL) 106 is a substrate transfer stage having a cooling function, and is used when exchanging the substrate G with the process station (P / S) 16 side. The peripheral device 110 may have a configuration in which, for example, a titler (TITLER) and a peripheral exposure device (EE) are vertically stacked. The transfer device 104 has, for example, a transfer arm 104 a as a unit capable of holding the substrate G, and the adjacent exposure device 12, each unit (BUF) 106, (EXT · COL) 108, (TITLER / EE) 110 and the transfer device 104 It can be handed over.
[0036]
FIG. 3 shows a processing procedure in this coating and developing processing system. First, in the cassette station (C / S) 14, the transport mechanism 22 takes out one substrate G from the predetermined cassette C on the stage 20 and excimer in the cleaning process section 24 of the process station (P / S) 16. It is carried into the UV irradiation unit (e-UV) 41 (step S1).
[0037]
The substrate G is subjected to dry cleaning by ultraviolet irradiation in the excimer UV irradiation unit (e-UV) 41 (step S2). This ultraviolet cleaning mainly removes organic substances on the substrate surface. After the completion of the ultraviolet cleaning, the substrate G is transferred to the scrubber cleaning unit (SCR) 42 of the cleaning processing unit 24 by the transport mechanism 22 of the cassette station (C / S) 14.
[0038]
In the scrubber cleaning unit (SCR) 42, as described above, the upper surface (substrate to be processed) of the substrate G is brushed and cleaned while the substrate G is transported in the horizontal direction by the roller transport or belt transport in the horizontal direction in the process line A direction. By performing cleaning, particulate dirt is removed from the substrate surface (Step S3). After the cleaning, the substrate G is rinsed while being transported in a flat flow, and finally, the substrate G is dried using an air knife or the like.
[0039]
The substrate G that has been cleaned in the scrubber cleaning unit (SCR) 42 is carried into the pass unit (PASS) 50 in the upstream multi-stage unit (TB) 44 of the first thermal processing unit 26.
[0040]
In the first thermal processing section 26, the substrate G is rotated by a predetermined unit in a predetermined sequence by the transport mechanism 46. For example, the substrate G is first transferred from the pass unit (PASS) 50 to one of the heating units (DHP) 52, 54, where it is subjected to a dehydration process (step S4). Next, the substrate G is transferred to one of the cooling units (COL) 62, 64, where it is cooled to a constant substrate temperature (step S5). Thereafter, the substrate G is transferred to the adhesion unit (AD) 56, where it is subjected to a hydrophobic treatment (step S6). After the completion of the hydrophobic treatment, the substrate G is cooled to a constant substrate temperature by one of the cooling units (COL) 62 and 64 (Step S7). Finally, the substrate G is moved to the pass unit (PASS) 60 belonging to the downstream multi-stage unit (TB) 48.
[0041]
As described above, in the first thermal processing unit 26, the substrate G is transferred between the upstream multi-stage unit (TB) 44 and the downstream multi-stage unit (TB) 48 via the transfer mechanism 46. You can come and go arbitrarily. The same substrate transfer operation can be performed in the second and third thermal processing units 30 and 36.
[0042]
The substrate G that has undergone the above-described series of thermal or thermal processing in the first thermal processing unit 26 is located on the downstream side of the pass unit (PASS) 60 in the downstream multi-stage unit (TB) 48. Is transferred to the resist coating unit (CT) 82 of the coating process section 28 of FIG.
[0043]
The substrate G is coated with a resist liquid on the upper surface of the substrate (the surface to be processed) by, for example, a spinless method in a resist coating unit (CT) 82, and is immediately subjected to a drying process under reduced pressure by a reduced-pressure drying unit (VD) 84 adjacent downstream. Next, an unnecessary (unnecessary) resist on the peripheral portion of the substrate is removed by the edge remover unit (ER) 86 adjacent on the downstream side (step S8).
[0044]
The substrate G that has been subjected to the above-described resist coating process passes from the edge remover unit (ER) 86 to the pass unit (PASS) belonging to the upstream multi-stage unit (TB) 88 of the adjacent second thermal processing unit 30. Handed over to
[0045]
In the second thermal processing unit 30, the substrate G is rotated by a predetermined unit in a predetermined sequence by the transport mechanism 90. For example, the substrate G is first transferred from the pass unit (PASS) to one of the heating units (PREBAKE), where it is baked after resist application (step S9). Next, the substrate G is moved to one of the cooling units (COL), where it is cooled to a constant substrate temperature (step S10). Thereafter, the substrate G is transferred to the extension cooling stage (EXT.COL) of the interface station (I / F) 18 via the pass unit (PASS) of the downstream multistage unit (TB) 92 or not. ) 108.
[0046]
At the interface station (I / F) 18, the substrate G is carried from the extension cooling stage (EXT · COL) 108 to the peripheral exposure device (EE) of the peripheral device 110, where the resist adhering to the peripheral portion of the substrate G is removed. After undergoing exposure for removal during development, it is sent to the next exposure device 12 (step S11).
[0047]
In the exposure device 12, a predetermined circuit pattern is exposed on the resist on the substrate G. Then, when the substrate G that has been subjected to the pattern exposure is returned from the exposure apparatus 12 to the interface station (I / F) 18 (step S11), the substrate G is first carried into a titler (TITLER) of the peripheral device 110, where a predetermined portion of the substrate is placed. The predetermined information is written in the part (step S12). Thereafter, the substrate G is returned to the extension cooling stage (EXT · COL) 108. The transfer of the substrate G at the interface station (I / F) 18 and the exchange of the substrate G with the exposure device 12 are performed by the transfer device 104.
[0048]
In the process station (P / S) 16, in the second thermal processing section 30, the transport mechanism 90 receives the exposed substrate G from the extension cooling stage (EXT · COL) 106, and the multi-stage unit section on the process line B side (TB) Transfer to the developing process unit 32 via the pass unit (PASS) in the 92.
[0049]
In the developing process section 32, the substrate G received from the pass unit (PASS) in the multi-stage unit (TB) 92 is carried into the developing unit (DEV) 94. In the developing unit (DEV) 94, the substrate G is transported downstream of the process line B in a flat flow manner, and a series of development processing steps of development, rinsing, and drying are performed during the transport (step S13).
[0050]
The substrate G that has been subjected to the development processing in the development processing unit 32 is carried into the decolorization processing unit 34 adjacent on the downstream side, and is subjected to the decolorization processing by i-ray irradiation there (step S14). The substrate G that has been subjected to the decolorizing process is transferred to the pass unit (PASS) in the upstream multistage unit (TB) 98 of the third thermal processing unit 36.
[0051]
In the third thermal processing section 36, the substrate G is first transferred from the pass unit (PASS) to one of the heating units (POBAKE), where it is subjected to post-baking (step S15). Next, the substrate G is transferred to a pass cooling unit (PASS · COL) in the downstream multi-stage unit (TB) 102, where it is cooled to a predetermined substrate temperature (step S16). The transfer of the substrate G in the third thermal processing section 36 is performed by the transfer mechanism 100.
[0052]
On the cassette station (C / S) 14 side, the transport mechanism 22 receives and receives the substrate G that has completed all the coating and developing processes from the pass cooling unit (PASS · COL) of the third thermal processing unit 36. The loaded substrate G is stored in any one of the cassettes C (step S1).
[0053]
In the coating and developing processing system 10, the present invention can be applied to the resist coating unit (CT) 82 of the coating processing unit 28. Hereinafter, an embodiment in which the present invention is applied to a resist coating unit (CT) 82 will be described with reference to FIGS.
[0054]
4 and 5 show the configuration of the main parts of the resist coating unit (CT) 82, the reduced-pressure drying unit (VD) 84, and the edge remover unit (ER) 86 in the coating processing unit 28.
[0055]
These coating system processing unit groups (CT) 82, (VD) 84, and (ER) 86 are arranged on the support base 112 in a horizontal line in the order of processing steps. The board G can be directly exchanged between the units by one or more sets of transfer arms 116, 116 that move along a pair of guide rails 114, 114 laid on both sides of the support base 112.
[0056]
The vacuum drying unit (VD) 84 includes a lower chamber 118 of a tray or shallow container type having an open upper surface, and a lid-shaped upper chamber configured to be airtightly fitted or fitted to the upper surface of the lower chamber 118. 120. The lower chamber 118 has a substantially rectangular shape, and a stage 122 for horizontally mounting and supporting the substrate G is provided at the center, and exhaust ports 124 are provided at four corners on the bottom surface. An exhaust pipe 128 connected to each exhaust port 124 from below the lower chamber 118 leads to a vacuum pump (not shown). With the lower chamber 118 covered with the upper chamber 120, the processing space in both chambers 118, 120 can be depressurized to a predetermined degree of vacuum by the vacuum pump.
[0057]
The edge remover unit (ER) 86 includes a stage 130 for horizontally mounting and supporting the substrate G, alignment means 132 for positioning the substrate G at a pair of opposing corners, and four sides of the substrate G. There are provided four remover heads 134 for removing excess resist from the peripheral portion (edge). While the alignment means 132 positions the substrate G on the stage 130, each remover head 134 moves along each side of the substrate G, and removes excess resist adhering to the peripheral edge of each side of the substrate G with a thinner. It is designed to be dissolved and removed.
[0058]
The resist coating unit (CT) 82 is a resist coating device that applies a resist solution onto the substrate G by a spinless method, and includes a cup-shaped processing container 136 having an open upper surface, and a substrate G in the processing container 136. A vertically movable stage 138 for mounting and holding horizontally, an elevation drive unit 140 provided below the processing container 136 for elevating the stage 138, and a resist for the substrate G on the stage 138. A scanning mechanism 144 for driving a resist nozzle head 154 (FIG. 6) for discharging liquid in the XY directions.
[0059]
FIG. 6 shows the configuration of the scanning mechanism 144. In the scanning mechanism 144, a pair of Y guide rails 146 and 146 extending in the Y direction are disposed on both sides of the processing container 136 (not shown in FIG. 6), and a distance between the Y guide rails 146 and 146 in the X direction. The extending X guide rail 148 is movably bridged in the Y direction. The Y-direction driving units 150, 150 arranged at predetermined positions, for example, at one ends of both the Y guide rails 146, 146, move the X guide rail 148 via the transmission mechanism (not shown) such as an endless belt. 146 is driven in the Y direction. Further, a carriage (transport body) 152 is provided along the X guide rail 148, which can move in the X direction, for example, by a self-propelled type or an external drive type. A nozzle head 154 is attached.
[0060]
As shown in FIG. 7, the resist nozzle head 154 includes an introduction passage 157 for introducing the resist solution from the end of the resist solution supply pipe 156, a buffer chamber 158 for temporarily storing the introduced resist solution, and a buffer chamber 158. It has a plurality of nozzle portions 160 extending vertically downward at regular intervals from the bottom, and a jet injection portion 162 provided in each nozzle portion 160. The discharge port 160a of the nozzle 160 has a fine diameter, for example, a diameter of 100 μm or less. The arrangement direction of the nozzles 160 is parallel to the longitudinal direction of the head.
[0061]
Each jet injection unit 162 is a so-called ink jet system, for example, has a piezo element, causes the piezo element to contract in response to an electric drive signal, and pressurizes the resist liquid in the nozzle unit 160 by the contraction pressure to form a droplet. Is configured to jet (discharge) from the nozzle discharge port 160a. A drive circuit (not shown) for providing an individual drive signal for each jetting unit 162 is mounted on the resist nozzle head 154 or the carriage 152.
[0062]
FIG. 8 shows a configuration example of a control unit for controlling the resist liquid discharging operation of the resist nozzle head 154. The setting input unit 164 includes, for example, an operation panel, and inputs various setting values related to the type and size of a work (substrate) and processing conditions. The host computer 166 sets a plurality of coating areas that are substantially separated and independent on the processing surface of the substrate G based on the input setting values, and generates data representing a layout of the coating areas, for example, coating image data. I do. Then, when applying the resist liquid to the substrate G, the application image data is sent to the nozzle controller 168 at a predetermined timing. The nozzle controller 168 generates a nozzle control signal for individually controlling the operation of the resist nozzle head 154 to discharge the resist liquid of each jetting unit 162 in accordance with the application image data from the host computer 166. In this embodiment, a nozzle control signal for applying the resist liquid only to a plurality of discrete application areas set on the substrate G is generated. The nozzle control signal generated by the nozzle controller 168 is provided as a drive signal to the jet injection unit 162 of each corresponding nozzle unit 160 via the drive circuit. On the other hand, the host computer 166 provides a scanning control signal for controlling the scanning movement of the registration nozzle head 154 to a controller or a driving unit of the scanning mechanism 144.
[0063]
Next, the operation of the resist coating unit (CT) 82 in this embodiment will be described for an example.
[0064]
Example 1
9 to 13 show an embodiment in which the substrate G is a multi-panel mother glass substrate for LCD.
[0065]
As shown in FIG. 9, discrete plural pieces, for example, nine liquid crystal panel (cell) areas S are set on the mother glass substrate G. Normally, the liquid crystal panel area S has a rectangular shape and is arranged in a matrix with an interval or gap of about 10 to 20 mm for inserting a scribe line. The size of the substrate G, the size and number of the liquid crystal panel area S (the number of chamfers), and other layout information are input from the setting input unit 164 as setting values. The host computer 166 sets an application area E corresponding to the liquid crystal panel area S on the substrate G according to the input setting value. Preferably, the correspondence between the liquid crystal panel region S and the application region E is a one-to-one relationship in which the application region E covers the entire liquid crystal panel region S to a minimum. For example, as shown in FIG. 9, the application area E may be set to have substantially the same shape as slightly protruding (for example, about 1 to 2 mm) outside the liquid crystal panel area S. What is important is that each application area E is substantially separated and independent, that is, a substantial space or gap d is set between adjacent application areas E.
[0066]
As shown in FIG. 9, the initial position Ps of the resist nozzle head 154 is set on an extension of the liquid crystal panel region S in the first row on the mother glass substrate G in the Y direction. When the resist coating process is started, the host computer 166 operates the scanning mechanism 144 (particularly, the Y-direction driving unit 150) to move the resist nozzle head 154 from the initial position Ps to the first row of the liquid crystal panel area on the mother glass substrate G. S is moved in a straight line so as to traverse the Y direction. On the other hand, a resist liquid is supplied to the resist nozzle head 154 from a resist liquid supply unit (not shown) via a resist liquid supply pipe 156.
[0067]
While the resist nozzle head 154 is passing above each liquid crystal panel area S in the first row, the nozzle controller 168 generates a nozzle control signal corresponding to the application image data from the host computer 166 to generate the resist nozzle head. The nozzle unit 160 (more precisely, the jet injection unit 162) is selectively operated. In this example, of all the nozzle sections 160 of the resist nozzle head 154, the active nozzle section 160 that performs the resist liquid discharging operation is limited to those within the section M corresponding to the width size (X-direction size) of the application region E. (FIG. 7). When all the nozzle sections 160 belonging to the active section M reach above the respective application areas E, the discharge of the resist liquid is started, and when the nozzle sections 160 fall outside the respective application areas E, the discharge of the resist liquid is stopped. In each application region E, the resist liquid may be continuously discharged at a constant discharge amount so that a liquid film of the resist liquid having a constant film thickness is formed. The nozzles 160 that do not belong to the active section M are kept in an inactive state (off state) even during the resist coating process.
[0068]
In this way, as shown in FIG. 10, the resist nozzle head 154 moves longitudinally through the liquid crystal panel region S in the first column in the Y direction, so that the resist liquid is applied only to each application region E (hatched region in the drawing) of the first column. Is applied.
[0069]
After completing the above-described application scanning for the liquid crystal panel region S in the first row, the resist nozzle head 154 moves along the route indicated by the chain line A in FIG. A similar application scan is performed. More specifically, after traversing the liquid crystal panel area S in the first column and out of the substrate G, the liquid crystal panel is once moved in the X direction to align with the liquid crystal panel area S in the second column, and then the first column. The liquid crystal panel region S in the second column is vertically moved in the Y direction in the opposite direction to that of the above, and the resist liquid discharging operation similar to the above is performed during that, so that the resist liquid is applied only to each application region E in the second column. Is applied. Then, after moving out of the substrate G, it is moved in the X direction to align with the liquid crystal panel region S in the third column, and then in the same direction as in the first column, the liquid crystal panel region S in the third column in the Y direction. The resist liquid is applied only to each of the application areas E in the third row by performing the same liquid discharge operation as described above while moving straight so as to cross the vertical direction.
[0070]
As a result, as shown in FIG. 11, the resist liquid is substantially constant only in nine application areas E (hatched areas in the figure) corresponding to nine liquid crystal panel areas S in the processing surface (upper surface) of the substrate G, respectively. It is applied in a film thickness. In the gap d between the application regions E, E adjacent to the peripheral portion of the substrate, an empty region where no resist liquid film exists remains.
[0071]
The substrate G that has been subjected to the resist coating processing by the resist coating unit (CT) 82 as described above is transferred to the adjacent reduced-pressure drying unit (VD) 84 by the transfer arms 116 and 116. In the reduced-pressure drying unit (VD) 84, the substrate G is placed in the lower chamber 118, and then the upper chamber 120 is covered and hermetically sealed, and the inside of the chamber is reduced to, for example, about 0.1 Torr by a vacuum pump. Maintain for a predetermined time. In the drying under reduced pressure, the solvent is efficiently released from the resist solution on the substrate G, but the resist solution may move in a random direction or return more. However, in this embodiment, the resist liquid on the substrate G is divided into a plurality (nine) of the application areas E with the space d therebetween, so that the movement and return of the resist liquid settles down in a small range ( And the growth does not reach a large extent that affects the film thickness. Therefore, even after drying under reduced pressure, the resist film in each application region E on the substrate G can maintain a substantially uniform film thickness.
[0072]
Further, in this embodiment, since the resist solution is applied only to necessary portions, not only over the entire surface of the substrate G, but in a limited or discrete manner, the consumption of the resist solution can be reduced, and the time required for drying can be shortened. it can. Therefore, the processing time in the reduced-pressure drying unit (VD) 84 can be shortened, and the throughput of the entire coating process unit 28 can be improved.
[0073]
In this embodiment, the resist film is formed only on the plurality of discrete application regions E set on the substrate G as described above. Therefore, it is preferable to use a negative resist in which an exposed portion in the coating region E remains after development.
[0074]
In the above example, the application area E is set on the substrate G so as to cover each liquid crystal panel area S to the minimum necessary. However, for example, as shown in FIG. 12, a gap (non-coating area) d is set only between the adjacent liquid crystal panel areas S, and the periphery of the substrate adjacent to each liquid crystal panel section S is included in the coating area E. Coating patterns are also possible. Alternatively, as shown in FIG. 13, a gap (non-application area) d is set only between each column (or each row), and one continuous application area is set in the liquid crystal panel unit S in the same column (or the same row). A coating pattern for setting E is also possible.
[0075]
In the above-described multi-paneling, nine liquid crystal panels are taken from one substrate G. However, the present invention can be applied to an application of multi-paneling to take an arbitrary number of panels. Further, in the above example, the resist nozzle head 154 repeats the application scanning for each column or each row on the plurality of application regions E set in a matrix on the substrate G a plurality of times. However, if the entire length of the nozzle portion of the resist nozzle head 154 can cover the entire end of the substrate G, the resist nozzle head 154 may include a plurality of sections corresponding to the application areas E of all columns or all rows on the substrate G. It is also possible to set the active range M of, and perform the resist coating process on the substrate G by one scan.
[0076]
Although the first embodiment described above relates to a multi-panel mother glass substrate for a liquid crystal display, the present invention is applicable to any multi-panel mother substrate, for example, a multi-panel mother glass for an organic EL display (OELD). The present invention can also be applied to a substrate, a multi-panel mother substrate for a plasma display (PDP), and the like in the same manner as in the first embodiment.
[0077]
Example 2
14 to 16 show an embodiment in which the substrate G is a substrate for a TFT liquid crystal display having a thin film transistor (TFT) for each pixel.
[0078]
As shown in FIG. 14, in a TFT liquid crystal display, an active element 160 composed of a TFT (Thin Film Transistor) and a transparent electrode 162 composed of an ITO (Indium Tin Tin Oxide) are formed in each pixel region on a glass substrate by using a photolithography technique. Are provided. An Si thin film made of an amorphous silicon film or a polysilicon film is formed in the active element region or the TFT region, and a gate electrode is formed above or below the Si thin film via a gate insulating film. Impurity diffusion regions (source / drain) are formed in the silicon thin film on both sides.
[0079]
In the manufacturing process of this TFT-LCD, as schematically shown in FIG. 15, for example, the present embodiment is performed in a photolithography process of forming a Si thin film in each TFT region on a substrate G (more precisely, on a liquid crystal panel region). Can be used. That is, a discrete coating region E covering each TFT region may be set on the substrate G, and the resist solution may be applied only to the coating region E in the same manner as in the first embodiment.
[0080]
FIG. 16 schematically shows a procedure of a photolithography step of forming a Si thin film on each TFT region on the substrate G using the resist coating method of the present invention. As shown in FIG. 16A, a resist is applied to a substrate G on which a Si thin film 164 is formed over the entire main surface only in a coating region E covering each TFT region by the resist coating process of the present invention. A film R is formed. Next, in the exposure step, as shown in FIG. 16B, the pattern of the photomask 166 is exposed only to the discrete resist films R on the substrate G. Here, the pattern of the photomask 166 is set so as to partition the TFT region within the region of each resist film R. Therefore, when the developing process is performed, a discrete resist film R 'corresponding to the section of each TFT region remains on the substrate G as shown in FIG. Thus, in the etching step, as shown in FIG. 16D, the underlying Si film 164 is etched using the resist film R 'as a mask. Finally, when the resist mask R 'is peeled off by ashing, discrete Si film regions 164' corresponding to the sections of each TFT region are formed on the substrate G as shown in FIG.
[0081]
Also in this embodiment, in the resist coating step, the movement or return of the resist solution on the substrate G during the drying process can be effectively divided or suppressed by the empty area d extending in a lattice shape, and the resist film The uniformity of the film thickness can be guaranteed. Therefore, the accuracy of the photolithography process can be improved, and the yield and device performance of the TFT-LCD can be improved. Further, it is possible to reduce the consumption of the resist solution and the drying time.
[0082]
Example 3
FIG. 17 shows an embodiment in which the substrate G is a substrate for a color filter having a red, green or blue colored layer for each pixel.
[0083]
The color filter has three primary color pixels of red, green, and blue arranged in a matrix on a transparent substrate, and enables color display of an LCD in combination with an electric optical shutter. Conventionally, a pigment dispersion method using photolithography has been known as one of the methods for manufacturing a color filter. In this manufacturing method, after a pigment-dispersed resist solution (color resist solution) is applied on a substrate, a pattern of a photomask is baked (exposed) with ultraviolet rays, and further developed to form a colored pattern or pixel of one color. . By repeating the above steps for each of the colors red, green and blue, three primary color pixels are formed in a matrix on the entire surface of the substrate.
[0084]
Conventionally, a color resist solution has been applied to the entire surface of the substrate when applying it on the substrate. However, according to the present invention, as shown in FIG. 17A, for example, when a red color resist solution is applied, a discrete application area E covering the area of each red pixel is set on the substrate G. Then, the color resist solution is applied only or locally to the application region E only. In the exposure step, as shown in FIG. 17B, a pattern defining a red pixel region is exposed to the application region E via a photomask 168. As a result, as shown in FIG. 17C, a red pixel R 'is formed in the red pixel region on the substrate G. Similarly, green and blue pixels are formed (FIG. 17D).
[0085]
Also in this embodiment, the color resist liquid R applied on the substrate G can be prevented from moving during the drying process, and the uniformity of the thickness of the color resist film can be ensured. It is also possible to reduce the consumption of the color resist solution and the drying time.
[0086]
The first, second, and third embodiments are merely examples, and the resist coating method and apparatus of the present invention can be applied to an application for coating an arbitrary resist solution on an arbitrary substrate in a photolithography process. Therefore, the substrate to be processed in the present invention is not limited to a glass substrate for LCD, but may be a semiconductor wafer, a CD substrate, a glass substrate, a photomask, a printed substrate, or the like.
[0087]
Further, in the resist coating unit (CT) 82 of the above-described embodiment, the heater 170 for heating and drying the resist liquid immediately after being coated on the substrate G by the resist nozzle head 154 is provided together with the resist nozzle head 154. A configuration in which scanning movement is performed by the scanning mechanism 144 is also possible.
[0088]
For example, as shown in FIGS. 18 and 19, a pair of heaters 170 are arranged on both sides of the registration nozzle head 154 in the scanning direction, and the heater 170 on the side located behind the registration nozzle head 154 in the traveling direction is selectively provided. It may be operated. In each heater 170, a heating section 172 made of, for example, a resistance heating element is provided. Air or nitrogen gas or the like may be drawn into the heater 170 via the gas pipe 174, and hot air may be blown from the heater 170 toward the substrate G side. In this manner, by drying the resist solution immediately after application in the resist application step to a certain extent, the drying time in the subsequent drying process (drying under reduced pressure or prebaking) can be further reduced. In addition, since the pre-drying treatment makes it difficult for the resist solution to move, the uniformity of the film thickness can be further improved.
[0089]
In the above embodiment, the configuration of each unit of the device is an example, and various modifications are possible. In particular, the jet injection unit 162 in the resist nozzle head 154 is not limited to the piezo type, but may be a thermal type or a charge control type.
[0090]
【The invention's effect】
As described above, according to the resist coating apparatus or the resist coating method of the present invention, the resist liquid applied on the substrate to be processed is prevented from moving during the drying process, and the thickness uniformity of the resist film is improved. Can be guaranteed. In addition, the consumption of the resist solution can be reduced, and the time required for drying the resist solution applied on the substrate can be shortened.
[Brief description of the drawings]
FIG. 1 is a plan view showing the configuration of a coating and developing system to which a coating method and a coating apparatus of the present invention can be applied.
FIG. 2 is a side view showing a configuration of a thermal processing unit in the coating and developing processing system of FIG.
FIG. 3 is a flowchart showing a processing procedure in the coating and developing processing system of FIG. 1;
FIG. 4 is a plan view showing a configuration of a main part of a coating system processing unit group in the coating and developing processing system of FIG. 1;
FIG. 5 is a side view showing a configuration of a main part of a coating system processing unit group in the coating and developing processing system of FIG. 1;
FIG. 6 is a perspective view illustrating a configuration of a scanning mechanism in the resist coating unit according to one embodiment.
FIG. 7 is a longitudinal sectional view showing a configuration example of a resist nozzle head in the resist coating unit of the embodiment.
FIG. 8 is a block diagram showing a configuration example of a control unit for controlling a resist liquid discharging operation of a resist nozzle head in the embodiment.
FIG. 9 is a schematic plan view schematically showing one stage of a resist coating process in the first embodiment.
FIG. 10 is a schematic plan view schematically showing one stage of a resist coating process in the first embodiment.
FIG. 11 is a schematic plan view schematically showing a state at the end of a resist coating process in the first embodiment.
FIG. 12 is a schematic plan view schematically showing a modification of the resist coating pattern in the first embodiment.
FIG. 13 is a schematic plan view schematically showing a modification of the resist coating pattern in the first embodiment.
FIG. 14 is a schematic plan view schematically showing a configuration of an array substrate of a TFT-LCD in a second embodiment.
FIG. 15 is a schematic plan view showing a resist coating pattern in the second embodiment.
FIG. 16 is a schematic sectional view showing a photolithography step in the second embodiment.
FIG. 17 is a schematic cross-sectional view showing a photolithography step in the third embodiment.
FIG. 18 is a schematic plan view showing a configuration in which a drying unit (heater) is provided in the resist coating unit of the embodiment.
FIG. 19 is a schematic side view showing a configuration in which a drying unit (heater) is provided in the resist coating unit of the embodiment.
[Explanation of symbols]
82 resist coating unit (CT)
138 stage
144 scanning mechanism
154 resist nozzle head
156 resist supply pipe
160 nozzle
162 jet injection unit
164 setting input section
166 host computer
168 nozzle controller
170 heater

Claims (11)

In a resist coating method of applying a resist liquid on a substrate to be processed in a photolithography process,
Setting a plurality of coating areas substantially separated and independent on the substrate,
Applying a resist liquid to the substrate only in the application region. 2. The resist coating method according to claim 1, wherein the resist liquid is applied so as to cover the entire area in the coating area with a substantially constant film thickness. 3. The resist according to claim 1, wherein the substrate is a motherboard of a multi-panel type for a flat panel display, and in the application region setting step, the application region is set corresponding to each panel region on the substrate. 4. Coating method. The substrate according to claim 1, wherein the substrate is a substrate for a TFT liquid crystal display having a thin film transistor (TFT) for each pixel, and the application region is set corresponding to each TFT region on the substrate in the application region setting step. 3. The resist coating method according to 2. The substrate is a substrate for a color filter having a red, green or blue colored layer for each pixel, and in the coating region setting step, the coating is performed in correspondence with each pixel region on the substrate for each colored layer. The resist coating method according to claim 1, wherein the region is set. A resist nozzle head in which a plurality of nozzle units configured to be able to independently control the resist liquid discharge operation are arranged at regular intervals,
Scanning means for scanning and moving the resist nozzle head relative to the substrate to be processed,
Coating area setting means for setting a plurality of coating areas substantially separated and independent on the substrate,
A resist liquid discharge control means for controlling a resist liquid discharge operation of the nozzle portion in the resist nozzle head so as to apply the resist liquid to the substrate only in the application region. A first scanning unit that relatively moves the resist nozzle head with respect to the substrate in a first direction orthogonal to an arrangement direction of the nozzle units; and a resist nozzle head with respect to the substrate. And a second scanning unit for relatively moving the nozzles in a second direction parallel to the arrangement direction of the nozzles. 8. The resist according to claim 6, further comprising a drying unit configured to heat and dry the resist liquid immediately after being applied to the substrate, wherein the drying unit is moved by the scanning unit together with the resist nozzle head. Coating device. The substrate according to any one of claims 6 to 8, wherein the substrate is a multi-paneled mother substrate for a flat panel display, and the application region setting means sets the application region in correspondence with each panel region on the substrate. The resist coating apparatus according to the above. 9. The substrate for a TFT liquid crystal display having a thin film transistor (TFT) for each pixel, and the application area setting means sets the application area corresponding to each TFT area on the substrate. The resist coating apparatus according to any one of the above. The substrate is a substrate for a color filter having a red, green or blue colored layer for each pixel, and the application area setting means corresponds to each pixel area on the substrate for each colored layer. The resist coating device according to claim 6, wherein the region is set.

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